JPH01286468A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To improve total operation, stability and yield by implanting titanium ion into a semiconductor nitride film and a semiconductor film, and the semiconductor nitride film and a source drain region, and performing heat treatment. CONSTITUTION:An insulating film 2, a gate insulating film 3, and a semiconductor layer 18 to isolate horizontally a semiconductor device are formed on a semiconductor substrate 1; a silicon film 19 is deposited thereon; titanium ion is implanted in the semiconductor layer 18; the semiconductor layer 18 and the ion-implanted titanium are subjected to alloy-reaction by heat treating the above semiconductor device, and the silicon nitride film in which titanium is ion-implanted is modified to a titanium nitride film 19b; a specified amount of titanium is ion-implanted in the silicon nitride film 19 on a source region and a drain region, and in the source region and the drain region; by heat treatment, alloy of semiconductor and titanium of the source region and the drain region is formed, and a part of the silicon nitride film is modified to a titanium nitride film 19b.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a semiconductor device that operates at high speed.

[Conventional technology]

Conventionally, the gate electrode of a semiconductor device was composed only of a semiconductor thin film. Normally, the operating speed of a semiconductor device is mainly defined by the effective channel length (distance between source and drain). However, in reality, the sheet resistance of the gate electrode thin film has a finite value, so in miniaturized semiconductor devices, the time it takes for a signal to propagate through the gate cannot be ignored. That is,
When the overall dimensions of semiconductor devices are reduced in order to improve the degree of integration, such as in LSIs, the sheet resistance of the gate electrode thin film increases, and the operating speed of the semiconductor devices changes to the characteristics predicted in a simple shrinking period. This decreases significantly compared to the previous year. Conventionally, efforts have been made to lower the sheet resistance using only semiconductor thin films, but so far it has not been possible to achieve a sheet resistance of 10 ohms or less with a film thickness of 500 nm or less. In order to solve this problem, a method using a semiconductor alloy film has recently been proposed. For example, silicon and titanium alloy (titanium
It is known that the sheet resistance can be lowered to several ohms when using a silicide film. However, for example, in the manufacturing process of semiconductor devices that use silicon as a semiconductor substrate, hydrofluoric acid is commonly used to clean the silicon surface, but since hydrofluoric acid severely attacks this silicide, One drawback is that you cannot use hydrofluoric acid to clean the surface. In addition, aluminum (At), which is commonly used as gold for wiring, is replaced with titanium.
When deposited on silicide, aluminum reacts with the silicide during post-deposition heat treatment and reaches not only the underlying silicide layer but also the underlying silicon layer, deteriorating the electrical characteristics of the gate insulating film of the semiconductor device. there were.

Contrary to the properties of titanium silicide films, titanium nitride films are hardly attacked by hydrofluoric acid, do not react with aluminum, and are conductors with relatively low resistivity values. , was used to solve the above problem. The cross-sectional view of a semiconductor device shown in FIG. 6 has been proposed by utilizing the characteristics of this titanium nitride film. In the figure, 1 is a single crystal semiconductor substrate of the first conductivity type, 2 is an insulating film for laterally insulating between semiconductor devices, 3 is a gate insulating film, 4a is a semiconductor film corresponding to a gate electrode, and 4b is also a gate 5 is a source region of the second conductivity type formed in the semiconductor substrate 1; 6 is a second conductivity type source region;
A conductive type drain region, 7 an insulating film for electrically insulating between wirings, 8? ``i source electrode, 9 is a drain electrode, and 11 is a titanium nitride film.Here, the reason why the semiconductor film 4a is formed under the gate electrode is to ensure controllability of the threshold voltage of the semiconductor device. This is to avoid a reaction between the semiconductor alloy film 4a and the gate insulating film 3.

Further, FIGS. 7(&) to (e) are cross-sectional views showing a conventional manufacturing method for the semiconductor device of FIG. 6. In the figure, 4 is a semiconductor film for a gate electrode, and 10 is a titanium film.

In the conventional method, as shown in FIG. 1A, an insulating film 2 and a gate insulating film 3 are formed on a semiconductor substrate 1 to laterally separate semiconductor devices.

Then, as shown in FIG. 3B, a semiconductor film 4 for a gate electrode, such as a polycrystalline silicon film, is formed on the gate insulating film 3. Subsequently, a titanium film 10 is formed on this gate electrode semiconductor film 4, as shown in FIG. 4(c). Next, this semiconductor device is heat-treated in a nitrogen gas atmosphere at a temperature of, for example, about 800°C to 900°C, so that the titanium film 10 and the gate electrode semiconductor film 4 are reacted as shown in FIG. , a two-layer structure of the semiconductor alloy thin film 4b and the semiconductor film 4& is formed, and a titanium nitride film 11 is formed on the surface of the semiconductor alloy film 4b.
form.

Thereafter, as shown in FIG. 4(e), these three-layer films are processed and formed into gate electrodes. After this, a semiconductor device is manufactured by a known manufacturing method. Note that the method for manufacturing the titanium nitride film shown in FIG. 4(d) may be a method in which the titanium nitride film is deposited on the semiconductor alloy thin film 4b.

On the other hand, conventional source and drain regions were composed only of semiconductors. As mentioned above, the main part that determines the operating speed of a semiconductor device is defined by the effective channel length (distance between the source and drain), but in reality, in addition to the increase in propagation delay due to the sheet resistance of the gate electrode thin film, An increase in propagation delay also occurs due to the sheet resistance of the source and drain regions. That is, when reducing the overall dimensions of a semiconductor device, the depths of the source and drain regions are also made shallower. this is,
This is because, in order to stably operate a semiconductor device with an extremely short gate length, it is necessary to reduce the thickness of the depletion layer generated at the source or drain junction as much as possible.

As a result, the sheet resistance of the source and drain regions increases, and the internal resistance of the semiconductor device increases. Therefore, the drain current decreases, and the operating speed of the semiconductor device decreases compared to the characteristics predicted in a simple shrinkage period. Conventionally, efforts have been made to lower the sheet resistance using only a semiconductor layer into which impurities are introduced at a high concentration, but so far it has not been possible to reduce the sheet resistance to 50 ohms or less with a film thickness of 200 nm or less. In order to solve this problem, a method using a semiconductor alloy film has recently been proposed. For example, silicon and titanium alloy film (titanium
In the case of silicide, it is known that the sheet resistance can be lowered to about several ohms. However, in the manufacturing process of semiconductor devices that use silicon as a semiconductor substrate, for example, hydrofluoric acid is commonly used to clean the silicon surface. The disadvantage was that hydrofluoric acid could not be used to oxidize. Furthermore, when aluminum (At), which is commonly used as a wiring metal, is deposited on titanium silicide, the aluminum reacts with the silicide during post-deposition heat treatment, reaching not only the underlying silicide layer but also the underlying silicon layer. There is a problem in that the electrical characteristics of the source junction and drain junction of the semiconductor device are deteriorated.

A sectional view of a semiconductor device shown in FIG. 8 has been proposed to solve this problem. In the figure, the same parts as in FIG. 6 are given the same reference numerals. 13 is an insulating layer, 14a is a second conductivity type source region, 14b is a semiconductor alloy thin film formed in the source region, 15a is a second conductivity type drain region, and 15b is a semiconductor alloy film formed in the drain region. , 17a, 17b are titanium nitride films.

Further, FIGS. 9(a) to 9(,) are cross-sectional views showing a conventional manufacturing method for the semiconductor device of FIG. 8. In the figure, 16 is a titanium thin film. In the conventional method, the same figure (a
), an insulating film 2 and a gate insulating film 3 for laterally separating semiconductor devices are formed on a semiconductor substrate 1,
Further, a gate electrode semiconductor film 4 is formed on the gate insulating film 3. Next, after processing the gate insulating film 3 and the gate electrode semiconductor film 4 to predetermined dimensions as shown in FIG.
This surface is covered with an insulating layer 13. Subsequently, as shown in FIG. 3C, at least the semiconductor regions to be used as source and drain regions are exposed, and a titanium thin film 16 is deposited on the surface thereof. Then, as shown in FIG. 3(d), this semiconductor device is heated in a nitrogen gas atmosphere to a predetermined temperature, for example, 850°C to 90°C.
Heat treatment is performed at 0° C. for about 30 minutes to form an alloy film of the titanium thin film 16 and the semiconductor substrate 1, and at the same time, the semiconductor alloy film M14 is
Titanium nitride films 17& and 17b are formed on the surfaces of b and 15b. Thereafter, impurity ions are implanted to make the source and drain regions of the second conductivity type. Next, this semiconductor device is treated at a predetermined temperature, for example, 900° C., for about 10 minutes to activate the ion-implanted impurities. Furthermore, as shown in FIG. After exposing the source electrode 8 and drain electrode 9, a source electrode 8 and a drain electrode 9 are formed. Note that in the above step, the titanium alloy film may be formed after forming the source and drain regions by ion implantation and heat treatment.

[Problem to be solved by the invention]

However, the manufacturing method shown in FIGS. 7(,) to (6),
There are three major problems. This will be explained using the cross-sectional view of FIG. In the figure, 12 is an impurity contained in the titanium film. Now, the first problem is as follows. That is, in FIG. 7(b), the sputtering method is usually adopted as a method for depositing the titanium film 10 on the semiconductor film 4, but in this method, the purity of the deposited thin film is higher than that of the target. It won't happen. The highest target purity is currently 99.9999%. Therefore, in the process from (c) to (d) in the same figure, the titanium film 1
During heat treatment to cause a reaction between 0 and the semiconductor film 4 or when nitriding the silicide surface, transition metal elements such as iron (Fe) or sodium (Na), potassium (K), etc. mixed into the titanium film 10 from this target are At the same time, the alkali metal impurity 12 diffuses toward the gate insulating film. As a result, the operating characteristics of the semiconductor device become thermally unstable, resulting in a decrease in the withstand voltage of the gate insulating film 3.

FIG. 2 shows that when titanium M10 is conventionally deposited on the surface of a semiconductor film 40, the semiconductor film 4 is exposed and then loaded into the deposition apparatus for the titanium film 10. Just in case you can't avoid oxygen adsorption. As a result, when the titanium film 10 is deposited, the titanium film 10
A layer containing a large amount of oxygen remains at the interface between the semiconductor M4 and the semiconductor M4.

When heat treatment is performed in this state, the layer containing a large amount of oxygen at the interface between the titanium film 10 and the semiconductor film 4 suppresses the reaction, and the reaction temperature becomes substantially higher. Further, this layer becomes an obstacle to uniform reaction, and the interface between the semiconductor film 4a and the semiconductor alloy thin film 4b becomes uneven. This not only causes variations in the operating characteristics of the semiconductor device, but in many cases, when the alloy film 4b reaches the gate insulating film 3 as shown in symbol 4c, the alloy film 4b corrodes the gate insulating film 3. This caused the problem that the particles were mixed into the semiconductor substrate 1.

Thirdly, the fact that radioactive elements in the deposited titanium pattern 10 induces soft errors is also a major problem.

Also, in the manufacturing methods shown in Sections 9(a) to (,),
It has three major problems. The first problem is as follows. That is, in the same figure (c), the titanium thin film 16
The sputtering method has been adopted as a method for depositing on the main surface of a semiconductor, but in the case of this method, the purity of the deposited thin film is determined by the purity of the target, as described above. Therefore, when performing heat treatment for reacting the titanium thin film 16 and semiconductor substrate 1 and activation heat treatment for the source and drain regions in the process from (C) to (d) K in the same figure, iron mixed into the titanium thin film from the target is removed. Metals such as (Fe) that degrade the operating characteristics of semiconductor devices are present on the semiconductor substrate 1 at the same time.
diffuses towards the inside of the The diffusion coefficient of the above-mentioned impurity metal is larger than the diffusion coefficient of titanium atoms that perform the alloying reaction, and the metal diffuses to a deeper position or near the bottom of the source/drain junction. This results in a significant increase in leakage current between the drain and substrate and between the source and drain of the semiconductor device.

2nd V? -1 Until now, when the titanium thin film 16 was deposited on the surface of a semiconductor region, the semiconductor region was exposed and then loaded into the titanium thin film deposition apparatus, so oxygen in the air was adsorbed onto the surface of the semiconductor region during the process. I couldn't avoid it. As a result, when the titanium thin film 16 is deposited, a layer containing a large amount of oxygen remains at the interface between the titanium thin film 16 and the semiconductor region. When heat treatment is performed in this state, the layer containing a large amount of oxygen at the interface between the titanium thin film and the semiconductor region suppresses the reaction, and the reaction temperature becomes substantially higher. In addition, this layer becomes an obstacle to a uniform reaction, and the interface between the source region 14& and the semiconductor alloy thin film 14b and the interface between the drain region 15a and the semiconductor alloy thin film 15b become uneven, which causes variations in the operating characteristics of the semiconductor device. It has become.

Thirdly, another major problem is that radioactive elements in the deposited titanium thin film 16 induce soft errors.

Due to these problems, this type of semiconductor device and its manufacturing method have rarely been put into practical use, despite their advantages.
Not yet.

An object of the present invention is to provide a gate electrode using a combination of an alloy film of titanium and a semiconductor film and a semiconductor film, or a source and drain region using a combination of the same alloy film and a semiconductor film,
It is an object of the present invention to provide a method for manufacturing a semiconductor device that can improve the overall operability of the semiconductor device, its stability, and yield.

[Means to solve the problem]

In order to solve the above problems, the present invention provides a step of forming a semiconductor thin film on a gate insulating film, a step of forming a semiconductor nitride film on the surface of this semiconductor film, and a step of forming a semiconductor thin film in this semiconductor nitride film and in the semiconductor thin film. a step of ion-implanting titanium into the
The method includes a step of alloying the semiconductor thin film and titanium by heat treatment and converting a part of the semiconductor nitride film into titanium nitride by a reaction between the semiconductor nitride film and titanium.

Further, a step of forming a semiconductor nitride film on the surfaces of a semiconductor region that will become a source region and a semiconductor region that will become a drain region, a step of ion-implanting titanium into this semiconductor nitride film and into the two semiconductor regions, and a heat treatment. The method further includes the step of alloying the two semiconductor regions with titanium and making a part of the semiconductor nitride film titanium nitride.

[For production]

Since titanium is introduced into the semiconductor nitride film and the semiconductor film by ion implantation, no unnecessary impurities or oxygen are mixed into the semiconductor device.

Since titanium is introduced into the semiconductor nitride film and the source and drain regions by ion implantation, unnecessary impurities and oxygen are not mixed into the semiconductor device.

〔Example〕

Embodiments of the present invention will be described below with reference to the drawings.

FIGS. 1(a) to 1(c) are cross-sectional views of a semiconductor device manufacturing method showing a first embodiment of the present invention. In the figure,
The same parts as in FIG. 7 are given the same reference numerals. 17 is a titanium ion to be ion-implanted, 18 is an amorphous or polycrystalline semiconductor layer corresponding to a semiconductor thin film, 18a is a semiconductor layer in which titanium ions are not implanted, and 18b is a semiconductor layer 18.
and ion-implanted titanium are alloyed, 19 is a silicon nitride film corresponding to a semiconductor nitride film, 19a
19b is a silicon nitride film immediately after ion implantation of titanium ions 17, and 19b is a titanium nitride film formed by heat treatment.

In this manufacturing method, as shown in FIG.
and gate insulating film 3 are formed. After that, a semiconductor layer 18 is formed on the gate insulating film 3, and a silicon nitride film 19 is further formed.
Deposit. Next, as shown in the same figure (b), the semiconductor layer 18
Titanium ions 17 are implanted inside. Then, by heat-treating this semiconductor device, the semiconductor layer 18 and the ion-implanted titanium are alloyed and the silicon nitride film into which the titanium ions have been implanted is modified into the titanium nitride film 19b. As a result, the titanium nitride film 19. A three-layer structure including a titanium alloy layer 18b and a semiconductor layer 18a is formed. After FIG. 1(c), a semiconductor device is manufactured by a known manufacturing method.

Next, FIGS. 2(a) to 2(d) are sectional views of a semiconductor device manufacturing method showing a second embodiment of the present invention.

In the figure, the same parts as in FIG. 9 are given the same reference numerals. 20a is a source region of a second conductivity type, 20b is a semiconductor alloy thin film formed in the source region 20b, 21a is a drain region of a second conductivity type, and 21b is a drain region 21
It is a semiconductor alloy thin film formed within &.

In this manufacturing method, as shown in FIG. 2(a), an insulating film 2 and a gate insulating film 3 for laterally separating semiconductor devices are formed on a semiconductor substrate 1 of a -th conductivity type. A semiconductor layer 18 is formed on the film 3. Next, as shown in FIG. 3B, after processing the gate insulating film 3 and the semiconductor layer 18 to predetermined dimensions, the surfaces thereof are covered with an insulating layer 13. Next, impurities of the second conductivity type are ion-implanted into the regions that will become the sources and drains, and then heat treatment is performed at a predetermined temperature in order to activate the impurities in these regions. Then, a silicon nitride film 19 is deposited on the source and drain regions.

Next, as shown in FIG. 2C, a predetermined amount of titanium ions are implanted into the silicon nitride film 19 on the source and drain regions and into the source and drain regions. after that,
Heat treatment is performed for a predetermined time at a predetermined temperature lower than the temperature of the heat treatment performed to activate impurities in the source region and the drain region, and an alloy of the semiconductor and titanium in the source region and the drain region is formed. Silicon nitride film 19
A part of the titanium nitride film is modified into a titanium nitride film 19b. Then, as shown in FIG. 4(d), an insulating layer 7 is formed, and then contact holes are formed to form a source electrode 8 and a drain electrode 9. Note that the semiconductor layer 18 may be included as a region into which titanium ions are implanted in the step shown in FIG.

FIG. 3 is a cross-sectional view of a semiconductor device manufactured to compare the conventional manufacturing method and the manufacturing method of the present invention. In the figure, 31 is a semiconductor substrate of a second conductivity type, 32 is a semiconductor layer of a second conductivity type formed in the semiconductor substrate 31, 33 is a titanium silicide layer, 34 is a titanium nitride film, 35 is an insulating film, and 36 is a titanium silicide layer. is an electrode, and 37 is an electrode terminal.

Now, the characteristics obtained using the semiconductor device of FIG. 3 will be explained according to the diagram. FIG. 4 is a characteristic diagram showing the reverse current versus reverse voltage characteristics of a p-n junction in which the semiconductor layer 32 of FIG. 3 is formed to be p-type and the semiconductor layer 31 is formed to be n-type. In the figure, symbol A is the characteristic when the manufacturing method of the present invention is used, symbol B is the characteristic when the conventional manufacturing method is used, and symbol C is the characteristic when the titanium silicide layer 33 is not formed. . Note that the junction area of the p-n junction is 2.5
x I O'μm, and the main manufacturing conditions are shown in Table 1. p
Comparing the reverse current of the -n junction at an applied voltage of -5V, it is found that when the titanium silicide layer 33 is formed using the conventional manufacturing method, the reverse current value increases by approximately one order of magnitude, whereas when the titanium silicide layer 33 is formed using the manufacturing method of the present invention, the reverse current value increases by approximately one order of magnitude. It can be seen that there is little increase in reverse current and little deterioration in characteristics.

FIG. 5 is a custom-made diagram showing the reverse current versus reverse voltage characteristics of an n-p junction in which the semiconductor layer 32 of FIG. 3 is of n-type and the semiconductor substrate is of p-type. In the figure, as in FIG. 4, symbol A is the characteristic of the present invention, symbol B is the conventional characteristic, and symbol C is the characteristic when the titanium silicide layer 33 is not formed. Note that the junction area of the n-p junction is 2.5
The main manufacturing conditions are shown in Table 2. n-p
Comparing the reverse direction current of the junction at an applied voltage of 5 V, it is found that forming the titanium silicide layer 33 using the conventional manufacturing method not only increases the reverse current value by about 6 orders of magnitude but also degrades the breakdown voltage, whereas this It can be seen that when manufactured using the manufacturing method of the invention, the increase in reverse current can be suppressed to about two digits, and there is no deterioration in breakdown voltage.

Table 1 /-- Table 2 〔Effect of the invention〕 As explained above, the present invention has the following effects.

(a) Since titanium is introduced into the semiconductor thin film by ion implantation, unnecessary impurities are not mixed into the semiconductor device. Therefore, it is possible to lower the resistance of the layer containing titanium, and at the same time prevent deterioration of the operating characteristics of the semiconductor device.
Yield is improved.

(b) Since titanium is directly introduced into the semiconductor thin film using ion implantation, the reaction is not inhibited by a layer of oxygen present at the interface between the titanium film and the semiconductor film, unlike in conventional manufacturing methods. do not have. Therefore, for example, when titanium and silicon are alloyed, they can be alloyed at a temperature of about 700°C, which is 100 to 150°C lower than the conventional temperature.

(c) Since titanium is directly introduced into the semiconductor thin film by ion implantation, the reaction progresses essentially uniformly, and the interface between the alloyed surface and the semiconductor thin film becomes smooth. This results in
The yield of semiconductor devices can be improved.

(d) 'M titanium oxide can be formed at the same time by heat treatment after titanium ion implantation, so the process can be simplified.

Moreover, it has the following effects.

(,) Since titanium is introduced into the semiconductor regions that will become the source and drain regions by ion implantation, unnecessary impurities are not introduced into the semiconductor device. Therefore, it is possible to reduce the resistance of the semiconductor region into which titanium is introduced, and at the same time prevent deterioration of the operating characteristics of the semiconductor device, thereby improving the yield.

(f) Since titanium is directly introduced into the semiconductor region that will become the source and drain regions using ion implantation, the reaction occurs due to the large amount of oxygen layer present at the interface between the titanium film and the semiconductor layer, unlike in conventional manufacturing methods. is not hindered. Therefore, for example, when titanium and silicon are alloyed, they can be alloyed at a temperature of about 700°C, which is 100 to 150°C lower than the conventional temperature.

Since alloying can be performed at a lower temperature than before, the alloying process has almost no effect on the impurity concentration distribution in the source and drain regions of the semiconductor device.

This is extremely advantageous, for example, in forming shallow source/drain junctions that are necessary as semiconductor devices are miniaturized.

(h) Since titanium is directly introduced into the semiconductor region by ion implantation, the reaction is not inhibited by a large layer of oxygen existing at the interface between the titanium film and the semiconductor region, unlike in conventional manufacturing methods. Therefore, for example, when titanium and silicon are alloyed, they can be alloyed at a temperature of about 700°C, which is 100 to 150°C lower than the conventional temperature.

(1) Since titanium is introduced into the semiconductor region by ion implantation, the reaction progresses uniformly and the interface between the alloyed surface and the semiconductor region becomes smooth. can be improved.

(J) Since titanium nitride can be formed simultaneously by heat treatment after titanium ion implantation, the process can be simplified.

[Brief explanation of the drawing]

1(a) to (c> are cross-sectional views of a semiconductor device manufacturing method showing a first embodiment of the present invention, and FIGS. 2(a) to (d)
) is a cross-sectional view of a semiconductor device manufacturing method showing a second embodiment of the present invention, and FIG. 3 is a cross-sectional view of a semiconductor device manufactured to compare the conventional manufacturing method and the manufacturing method of the present invention.
Figures 4 and 5 are measured using the semiconductor device shown in Figure 3.
Figure 6 is a cross-sectional view of a conventional semiconductor device using a titanium nitride film for the gate, and Figures 7 (a) to (,) are the semiconductor device in Figure 6. 8 is a cross-sectional view showing the manufacturing method of the semiconductor device in FIG. 8, and FIG. 10 is a cross-sectional view showing the movement of impurities in the semiconductor device. 1... Single crystal semiconductor substrate, 2... Insulating film, 3...
... Gate insulating film, 7... Insulating film, 8... Source electrode, 9... Drain electrode, 13... Insulating layer, 18... Semiconductor layer, 18a... ...Semiconductor layer without titanium ion implantation, 18b...Alloyed titanium alloy layer, 19...Silicon nitride film, 19a
...Silicon nitride film after ion implantation of titanium ions 17, 19b-...Titanium nitride film, 20a.
...Saw 2 region, 20b, 21b...Semiconductor alloy thin film, 21a...Drain region. Agent: Masaki Yamakawa (e-ji) 1 person) Fig. 1 Fig. 2 Zozo 2r generation n1 electrician ((A) Fig. 7 Fig. 8

Claims (2)

[Claims] (1) a step of forming a semiconductor thin film on the gate insulating film; a step of forming a semiconductor nitride film on the surface of the semiconductor thin film; a step of implanting titanium ions into the semiconductor nitride film and into the semiconductor thin film; A semiconductor device comprising the steps of alloying the semiconductor thin film and the titanium by heat treatment, and converting a part of the semiconductor nitride film into titanium nitride by a reaction between the semiconductor nitride film and the titanium. Production method. (2) a step of forming a semiconductor nitride film on the surfaces of a semiconductor region that will become a source region and a semiconductor region that will become a drain region; and a step of ion-implanting titanium into this semiconductor nitride film and into the two semiconductor regions; A semiconductor characterized by comprising the steps of alloying the two semiconductor regions and the titanium by heat treatment, and converting a part of the semiconductor nitride film into titanium nitride by a reaction between the semiconductor nitride film and the titanium. Method of manufacturing the device.