JPH01272766A - Magnetron sputtering operation - Google Patents
Magnetron sputtering operationInfo
- Publication number
- JPH01272766A JPH01272766A JP10339788A JP10339788A JPH01272766A JP H01272766 A JPH01272766 A JP H01272766A JP 10339788 A JP10339788 A JP 10339788A JP 10339788 A JP10339788 A JP 10339788A JP H01272766 A JPH01272766 A JP H01272766A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- negative voltage
- target
- film
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001755 magnetron sputter deposition Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 239000010408 film Substances 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000004544 sputter deposition Methods 0.000 claims abstract description 10
- 239000010409 thin film Substances 0.000 claims abstract description 10
- 238000004140 cleaning Methods 0.000 abstract description 24
- 230000015572 biosynthetic process Effects 0.000 abstract description 17
- 230000000694 effects Effects 0.000 abstract description 8
- 239000011261 inert gas Substances 0.000 abstract description 8
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 210000003127 knee Anatomy 0.000 description 4
- 238000005546 reactive sputtering Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明はマグネトロンスパッタ操業方法に関し、詳細に
は基板表面の放電洗浄工程と基板への蒸着膜形成工程を
同一雰囲気内で連続的に実施で与る様にしたマグネトロ
ンスパッタ操業方法に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a magnetron sputtering operation method, and more specifically, a method of operating a magnetron sputter, in which a discharge cleaning step of a substrate surface and a step of forming a vapor deposited film on the substrate can be performed continuously in the same atmosphere. This invention relates to a magnetron sputtering operation method in which
［従来の技術］
スパッタリング等の物理的蒸着法によって基板上に金属
や化合物の薄膜を形成する場合には、薄膜の付着力を高
めると共にその性質の安定化を図る目的で、基板の前処
理が行なわれる。基板の前処理としては、まず真空装置
外で基板の予熱洗浄処理が行なわれ、製作工程や保存工
程で付着した各種の汚染物質が取除かれた後、更に真空
装置内で真空放電洗浄が行なわれて基板表面になお残留
している吸着ガス等が取り除かれる。[Prior Art] When forming a thin film of metal or compound on a substrate by physical vapor deposition such as sputtering, pretreatment of the substrate is necessary to increase the adhesion of the thin film and stabilize its properties. It is done. As for substrate pretreatment, the substrate is first preheated and cleaned outside the vacuum equipment to remove various contaminants that have adhered during the manufacturing and storage processes, and then vacuum discharge cleaning is performed inside the vacuum equipment. The adsorbed gas and the like still remaining on the substrate surface are removed.
第２図は典型的なマグネトロンスパッタ装置の構成を示
す概略説明図であり、図中１は真空チャンバー、２はタ
ーゲットホルダー、３は永久磁石、４はターゲット、５
は基板ホルダー、６は基板、７はメツシュアノード、８
は成膜用高周波電源、９は放電洗浄用及びバイアス印加
用の直流電圧電源、１０はシャッターを夫々示す。FIG. 2 is a schematic explanatory diagram showing the configuration of a typical magnetron sputtering apparatus, in which 1 is a vacuum chamber, 2 is a target holder, 3 is a permanent magnet, 4 is a target, and 5 is a
is a substrate holder, 6 is a substrate, 7 is a mesh node, 8
Reference numeral 9 indicates a high frequency power supply for film formation, 9 indicates a DC voltage power supply for discharge cleaning and bias application, and 10 indicates a shutter.
当該装置では、減圧ガス（例えばＡｒ等）雰囲気中にタ
ーゲット４（陰極）と基板６（陽極）を離して対向配置
すると共にそれらの間に高電圧を印加することによって
グロー放電状態を形成し、該放電空間に形成されたプラ
ズマ正イオンをターゲット表面に衝突させ、ターゲット
表面から放出されるスパッタ粒子を基板上に蒸着させる
。そして前記永久磁石３によって電界と直交する方向に
磁界を形成することにより、放電効率を高め成膜速度を
促進させる。In this device, a glow discharge state is formed by arranging a target 4 (cathode) and a substrate 6 (anode) facing each other with a distance between them in a reduced pressure gas (for example, Ar) atmosphere, and applying a high voltage between them. Plasma positive ions formed in the discharge space collide with the target surface, and sputtered particles emitted from the target surface are deposited on the substrate. By forming a magnetic field in a direction perpendicular to the electric field using the permanent magnet 3, the discharge efficiency is increased and the film formation rate is accelerated.
上記蒸着膜形成に先立って基板６を放電洗浄する当って
は、次の様に行なわれる。即ち真空チャンバー１内を真
空排気後Ａｒ等の不活性ガスを導入し、真空チャンバー
１内の圧力を調整した上で、基板６が陰極となる様にメ
ツシュアノード７と基板６間に数百乃至数千ボルトの電
圧を電源９によって印加しグロー放電を引き起こす。そ
してイオン化された不活性ガスイオンが基板６ヘイオン
衝撃を与えることによって、基板６上に付着している残
留吸着ガス等が除去される。The discharge cleaning of the substrate 6 prior to the formation of the deposited film is carried out as follows. That is, after the inside of the vacuum chamber 1 is evacuated, an inert gas such as Ar is introduced, and the pressure inside the vacuum chamber 1 is adjusted. A voltage of several thousand volts is applied by a power source 9 to cause a glow discharge. Then, the ionized inert gas ions impact the substrate 6 with ions, thereby removing residual adsorbed gas and the like adhering to the substrate 6.
尚上記電源９は、高品質の薄膜を得る目的で、膜形成中
においても基板６側に負電圧を印加する場合（バイアス
スパッタリング法）にも利用されている。The power source 9 is also used to apply a negative voltage to the substrate 6 even during film formation (bias sputtering method) in order to obtain a high quality thin film.
［発明が解決しようとする課題］
第３図は、放電洗浄及び蒸着膜形成の各工程を含めたマ
グネトロンスパッタ操業の従来手順を示すフローチャー
トである。放電洗浄を行なう場合には前述した様に、ま
ず真空チャンバー内の圧力調整が行なわれるが、従来で
は直流電圧電源によるグロー放電の維持可能な圧力範囲
が１０−”Ｔｏｒｒ台までである為、放電洗浄時のチャ
ンバー内圧力は１０−２丁ｏｒｒ程度に設定されていた
。一方マグネトロンスバッタの成膜時の圧力は、ターゲ
ットホルダー内に配置された永久磁石によるマグネトロ
ン効果と高周波電源の使用により、成膜時のグロー放電
は１Ｇ−’Ｔｏｒｒ台まで維持可能となるが、できる膜
の膜質の点からより低圧力下での成膜が望ましい為、一
般に成膜時の圧力は１０−’Ｔｏｒｒ程度に設定されて
いた。従って放電洗浄工程から成膜工程に穆る際には、
第３図に示す様に真空チャンバー内の圧力を成膜に最適
な圧力値に再調整する必要があり、ますだ第１にはその
間の時間的損失が挙げられる。又反応性スパッタを実施
する場合や基板を加熱する場合等には、圧力の再調整の
間に反応性ガスの導入や基板の加熱を行っており、時間
的な損失は勿論のこと基板の再汚染の恐れもあった。更
に放電洗浄時のグロー放電は一般に１Ｏ−２Ｔｏｒｒ程
度のおだやかな減圧状態で行なうのが一般であるから、
基板に衝突する際の不活性ガスイオンのエネルギーが低
く、且つ流入電流密度も小さいので十分な洗浄効果が得
られないという問題もあった。[Problems to be Solved by the Invention] FIG. 3 is a flowchart showing the conventional procedure of magnetron sputtering operation including the steps of discharge cleaning and vapor deposited film formation. As mentioned above, when performing discharge cleaning, the pressure inside the vacuum chamber is first adjusted. Conventionally, the pressure range that can maintain glow discharge using a DC voltage power supply is up to 10-" Torr, so the pressure in the vacuum chamber is adjusted. The pressure inside the chamber during cleaning was set to about 10-2 orr.On the other hand, the pressure during film formation using magnetron scattering was determined by the magnetron effect of the permanent magnet placed inside the target holder and the use of a high-frequency power source. The glow discharge during film formation can be maintained up to 1 G-'Torr, but from the viewpoint of the quality of the resulting film, it is desirable to form the film at a lower pressure, so the pressure during film formation is generally around 10-'Torr. Therefore, when moving from the discharge cleaning process to the film forming process,
As shown in FIG. 3, it is necessary to readjust the pressure in the vacuum chamber to the optimum pressure value for film formation, and the first problem is the time loss during this process. In addition, when performing reactive sputtering or heating the substrate, reactive gas is introduced and the substrate is heated while the pressure is readjusted, which not only results in time loss but also requires the substrate to be reheated. There was also a risk of contamination. Furthermore, glow discharge during discharge cleaning is generally performed under a mild reduced pressure of about 10-2 Torr.
There is also the problem that a sufficient cleaning effect cannot be obtained because the energy of the inert gas ions when colliding with the substrate is low and the inflow current density is also low.
本発明はこうした状況のもとでなされたものであって、
その目的とするところは、時間的損失が少なく且つ基板
の再汚染の恐れもなく、十分な洗浄効果を発揮しつつ安
定した薄膜を形成できる様なスパッタリング操業方法を
提供することにある。The present invention was made under these circumstances, and
The purpose is to provide a sputtering operation method that can form a stable thin film while exhibiting a sufficient cleaning effect with little time loss and no fear of recontamination of the substrate.
［課題を解決する為の手段］
上記目的を達成し得た本発明とは、マグネトロンスパッ
タ装置を用いて基板上に薄膜を形成するに当たり、該装
置内を成膜操業時の圧力条件に調整した状態で、ターゲ
ット側に負電圧を印加して主放電を発生させると共に、
前記基板側には前記ターゲット側よりも電位の低い負電
圧を印加して基板表面の清浄化を図り、引続き前記基板
側の負電圧電位を前記ターゲット側の負電圧電位よりも
高くなる様に調整してスパッタリングを行ない基板上に
成膜する点に要旨を有するマグネトロンスパッタ操業方
法である。[Means for Solving the Problems] The present invention that achieves the above object is that when forming a thin film on a substrate using a magnetron sputtering device, the inside of the device is adjusted to the pressure conditions during film-forming operation. In this state, a negative voltage is applied to the target side to generate a main discharge, and
A negative voltage having a lower potential than the target side is applied to the substrate side to clean the substrate surface, and the negative voltage potential of the substrate side is subsequently adjusted to be higher than the negative voltage potential of the target side. This is a magnetron sputtering operation method whose main point is to perform sputtering to form a film on a substrate.
［作用］
第４図は本発明方法の手順を示すフローチャートである
。尚本発明方法を実施する為のマグネトロンスパッタ装
置の構成は、基本的には第２図に示した構成と同様であ
り、第２図及び第４図を同時に参照しつつ本発明方法を
説明する。[Operation] FIG. 4 is a flowchart showing the procedure of the method of the present invention. The structure of the magnetron sputtering apparatus for carrying out the method of the present invention is basically the same as the structure shown in FIG. 2, and the method of the present invention will be explained with reference to FIG. 2 and FIG. 4 at the same time. .
真空チャンバー１内への基板セットから不活性ガス導入
までの工程は従来と同様である（前記第３図参照）。本
発明においては、最初の圧力調整の段階において、真空
チャンバー１内を成膜時の圧力条件（例えば１０−’Ｔ
ｏｒｒの低い圧力）に調整する。尚反応性スパッタを行
なう場合には、不活性ガスを導入するときに必要な反応
ガスを同時に導入してから真空チャンバー内が成膜時の
圧力状態に調整される。即ち本発明法においては、不活
性ガス（及び反応性ガス）を導入した後の圧力調整の段
階で真空チャンバー１内が成膜時の圧力に設定される。The steps from setting the substrate into the vacuum chamber 1 to introducing an inert gas are the same as in the conventional method (see FIG. 3). In the present invention, in the initial pressure adjustment stage, the inside of the vacuum chamber 1 is adjusted to the pressure conditions during film formation (for example, 10-'T
orr low pressure). When performing reactive sputtering, a necessary reactive gas is introduced at the same time as the inert gas is introduced, and then the pressure inside the vacuum chamber is adjusted to the pressure state at the time of film formation. That is, in the method of the present invention, the pressure inside the vacuum chamber 1 is set to the pressure at the time of film formation at the stage of pressure adjustment after introducing the inert gas (and reactive gas).
次に前述のバイアススパッタ法と同様にして、成膜用電
源８によってターゲット４側に負電圧（ｖｔ）を印加し
てグロー放電を発生させると共に、バイアス印加用電源
９によって基板６側にも負電圧（Ｖｓ）を印加する。但
し、本発明方法ではグロー放電発生後のしばらくの間は
基板６側がターゲット４側よりも電位が低くなる様に（
ｖｔ＞ｖｓ）前記電源８．９の電圧を設定する。この状
態では基板６側に到達するイオンエネルギーがターゲッ
ト４側に到達するイオンエネルギーよりも大きくなるの
で、基板６の表面におけるスパッタエツチングが優位の
状態となり、該表面の放電洗浄が行なわれる。Next, in the same manner as the bias sputtering method described above, a negative voltage (vt) is applied to the target 4 side by the film forming power source 8 to generate a glow discharge, and a negative voltage (vt) is also applied to the substrate 6 side by the bias applying power source 9. Apply voltage (Vs). However, in the method of the present invention, the potential on the substrate 6 side is lower than that on the target 4 side for a while after the glow discharge occurs (
vt>vs) Set the voltage of the power supply 8.9. In this state, the ion energy reaching the substrate 6 side is greater than the ion energy reaching the target 4 side, so sputter etching on the surface of the substrate 6 becomes dominant, and the surface is discharge cleaned.
この様にして一定時間を経過させて放電洗浄が完了する
と、引続いて基板６側の負電圧電位がターゲット４側の
負電圧電位よりも高（（Ｖｓ＞ｖｔ）なる様に調整され
る。この様に電圧を設定した後はターゲット４側でのス
パッタ作用が大きくなり、前述した原理に従って基板６
上に薄膜が形成される。When discharge cleaning is completed after a certain period of time has elapsed in this way, the negative voltage potential on the substrate 6 side is subsequently adjusted to be higher than the negative voltage potential on the target 4 side ((Vs>vt). After setting the voltage in this way, the sputtering effect on the target 4 side increases, and the substrate 6
A thin film is formed on top.
尚前記第２図に示したマグネトロンスパッタ装置の基本
構成は既に述べた通り、基本的にはそのまま本発明方法
に利用されるのであるが、本発明方法を実施するには、
その他覚源８．９の負電圧を調整する為の機構が付加さ
れる必要がある。As already mentioned, the basic configuration of the magnetron sputtering apparatus shown in FIG.
It is necessary to add a mechanism for adjusting the negative voltage of the sensing source 8.9.
本発明は上述の如く構成されるが、要するに成膜時と同
じ圧力状態で基板の放電洗浄が行なえるので、時間の節
約になると共に、反応性スパッタの場合であっても基板
の再汚染等が防がれる。又ターゲット側（マグネトロン
カソード側）で主放電を発生させているので、従来より
低い圧力下での放電洗浄が可能であり、これによって基
板に到達するイオンのエネルギーが大きくなり、基板へ
の清浄効果が向上する。更に基板へのイオン衝撃エネル
ギーが大きくなることによって、洗浄中の基板温度の上
昇も大きくなり、基板を別途加熱せずども基板への薄膜
の密着性向上が図れる。The present invention is configured as described above, but in short, the discharge cleaning of the substrate can be performed under the same pressure conditions as during film formation, which saves time and prevents re-contamination of the substrate even in the case of reactive sputtering. is prevented. In addition, since the main discharge is generated on the target side (magnetron cathode side), discharge cleaning can be performed under lower pressure than before, which increases the energy of the ions that reach the substrate, resulting in a cleaning effect on the substrate. will improve. Furthermore, as the ion bombardment energy to the substrate increases, the temperature of the substrate increases during cleaning, and the adhesion of the thin film to the substrate can be improved without separately heating the substrate.
以下実施例によって本発明を更に詳細に説明するが、下
記実施例は本発明を限定する性質のものではなく、前・
後記の趣旨に徴して設計変更することはいずれも本発明
の技術的範囲に含まれるものである。The present invention will be explained in more detail with reference to Examples below, but the Examples below are not intended to limit the present invention.
Any design changes for the purposes described below are included within the technical scope of the present invention.
［実施例コ
下記の手順に従って本発明方法を実施し、基板６上にＴ
ｉＮ膜を形成した。[Example 1] The method of the present invention was carried out according to the following procedure, and T was deposited on the substrate 6.
An iN film was formed.
ターゲット４としてＴｉ板を用い、該ターゲット４を真
空チャンバー１内にセットした後真空排気した。このと
きの真空チャンバー１内の圧力はＩ Ｘ １０−’Ｔｏ
ｒｒ以下であった。A Ti plate was used as the target 4, and the target 4 was set in the vacuum chamber 1 and then evacuated. The pressure inside the vacuum chamber 1 at this time is I X 10-'To
It was below rr.
次にＡｒ（不活性ガス）を１１００５ＣＣの流量で、及
びＮ２ （反応性ガス）を９ＳＣＣＭの流量で夫々導
入した後、チャンバー内の圧力を３×１０−’Ｔｏｒｒ
となる様に調整した。Next, after introducing Ar (inert gas) at a flow rate of 11005 CC and N2 (reactive gas) at a flow rate of 9 SCCM, the pressure inside the chamber was reduced to 3 × 10-'Torr.
It was adjusted so that
更に、基板６側の電圧を一５００■に、ターゲット側の
電圧を一２００■に夫々設定して１５分間放電洗浄を行
ない、引続いて基板６側の電圧を一２００Ｖに、ターゲ
ット側の電圧−５ｏｏｖに夫々設定してスパッタリング
を実施した。このときの基板６及びターゲット４におけ
る電圧の時間的変化を第１図に示す。Furthermore, the voltage on the substrate 6 side was set to -500 V and the voltage on the target side was set to -200 V, respectively, and discharge cleaning was performed for 15 minutes, and then the voltage on the substrate 6 side was set to -200 V and the voltage on the target side was set to Sputtering was performed with each setting set to -5oov. FIG. 1 shows temporal changes in the voltages at the substrate 6 and target 4 at this time.
その結果、基板６上には安定したＴｉＮ膜が形成された
。As a result, a stable TiN film was formed on the substrate 6.
尚木発明者らは、反応ガスの流量（８〜１０１０３ＣＣ
、真空チャンバー１内の圧力（３〜５ ｘ １０−’Ｔ
ｏｒｒ） 、放電洗浄時における基板６及びターゲット
４の電圧（基板側電圧ニー５００〜−４００Ｖ、ターゲ
ット側電圧ニー２００〜−１００■）、放電洗浄時間（
５〜１５分）、成膜時における基板６及びターゲット４
の電圧（基板側電圧ニー２００〜−１００Ｖ、ターゲッ
ト側電圧ニー５００〜−４００Ｖ）等の条件を上記範囲
内で各種設定して本発明を実施したところ、いずれも安
定したＴｉＮ膜が基板６上に形成された。Inventors Naoki et al.
, the pressure in the vacuum chamber 1 (3~5 x 10-'T
orr), the voltage of the substrate 6 and target 4 during discharge cleaning (substrate side voltage knee 500 to -400V, target side voltage knee 200 to -100V), discharge cleaning time (
5 to 15 minutes), substrate 6 and target 4 during film formation
When the present invention was carried out by setting various conditions such as voltage (substrate side voltage knee 200 to -100V, target side voltage knee 500 to -400V) within the above range, a stable TiN film was formed on the substrate 6. was formed.
［発明の効果コ
上述した如く本発明方法によれば、既述した手順に従っ
て操業することによって、基板の放電洗浄と基板への蒸
着膜形成工程とが同一７囲気内で連続的に達成されるの
で、従来における様な圧力再調整による時間的損失をな
くし、十分な洗浄効果を発揮しつつ安定した薄膜を形成
することができる。[Effects of the Invention] As described above, according to the method of the present invention, by operating according to the procedure described above, the discharge cleaning of the substrate and the step of forming a vapor deposited film on the substrate can be continuously accomplished within the same seven atmospheres. Therefore, it is possible to eliminate the time loss due to pressure readjustment as in the conventional method, and to form a stable thin film while exhibiting a sufficient cleaning effect.
第１図は本発明方法を実施した際の基板６及びターゲッ
ト４における電位の時間的変化を示すグラフ、第２図は
典型的なマグネトロンスパッタ装置の構成を示す概略説
明図、第３図は従来のマグネトロンスパッタ操業の手順
を示すフローチャート、第４図は本発明方法の手順を示
すフローチャートである。
１・・・真空チャンバー ２・・・ターゲットホルダー
３・・・永久磁石 ４・・・ターゲット５・・・
基板ホルダー ６・・・基板７・・・メツシュアノー
ド
８・・・成膜用高周波電源
９・・・直流電圧電源 １０・・・シャッター丼 廻
（〉）
第３図
第４図FIG. 1 is a graph showing temporal changes in potential at the substrate 6 and target 4 when the method of the present invention is carried out, FIG. 2 is a schematic explanatory diagram showing the configuration of a typical magnetron sputtering apparatus, and FIG. 3 is a conventional FIG. 4 is a flowchart showing the steps of the magnetron sputtering operation. FIG. 4 is a flowchart showing the steps of the method of the present invention. 1... Vacuum chamber 2... Target holder 3... Permanent magnet 4... Target 5...
Substrate holder 6... Substrate 7... Mesh anode 8... High frequency power source for film formation 9... DC voltage power source 10... Shutter bowl rotation (>) Figure 3 Figure 4
Claims (1)
するに当たり、該装置内を成膜操業時の圧力条件に調整
した状態で、ターゲット側に負電圧を印加して主放電を
発生させると共に、前記基板側には前記ターゲット側よ
りも電位の低い負電圧を印加して基板表面の清浄化を図
り、引続き前記基板側の負電圧電位を前記ターゲット側
の負電圧電位よりも高くなる様に調整してスパッタリン
グを行ない基板上に成膜することを特徴とするマグネト
ロンスパッタ操業方法。When forming a thin film on a substrate using a magnetron sputtering device, a negative voltage is applied to the target side to generate a main discharge while the inside of the device is adjusted to the pressure conditions for film forming operation, and a main discharge is generated on the substrate. A negative voltage having a lower potential than the target side is applied to the substrate side to clean the substrate surface, and then the negative voltage potential of the substrate side is adjusted to be higher than the negative voltage potential of the target side. A magnetron sputtering operation method characterized by performing sputtering to form a film on a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10339788A JPH01272766A (en) | 1988-04-25 | 1988-04-25 | Magnetron sputtering operation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10339788A JPH01272766A (en) | 1988-04-25 | 1988-04-25 | Magnetron sputtering operation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01272766A true JPH01272766A (en) | 1989-10-31 |
Family
ID=14352926
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10339788A Pending JPH01272766A (en) | 1988-04-25 | 1988-04-25 | Magnetron sputtering operation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01272766A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0536610A (en) * | 1991-07-26 | 1993-02-12 | Shimadzu Corp | Vacuum film forming equipment |
| WO2014060817A1 (en) * | 2012-10-18 | 2014-04-24 | Soitec | Method for bonding by means of molecular adhesion |
-
1988
- 1988-04-25 JP JP10339788A patent/JPH01272766A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0536610A (en) * | 1991-07-26 | 1993-02-12 | Shimadzu Corp | Vacuum film forming equipment |
| WO2014060817A1 (en) * | 2012-10-18 | 2014-04-24 | Soitec | Method for bonding by means of molecular adhesion |
| FR2997224A1 (en) * | 2012-10-18 | 2014-04-25 | Soitec Silicon On Insulator | METHOD OF BONDING BY MOLECULAR ADHESION |
| US9548202B2 (en) | 2012-10-18 | 2017-01-17 | Soitec | Method for bonding by means of molecular adhesion |
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