JPH01251760A - Ferroelectric storage device - Google Patents
Ferroelectric storage deviceInfo
- Publication number
- JPH01251760A JPH01251760A JP63078938A JP7893888A JPH01251760A JP H01251760 A JPH01251760 A JP H01251760A JP 63078938 A JP63078938 A JP 63078938A JP 7893888 A JP7893888 A JP 7893888A JP H01251760 A JPH01251760 A JP H01251760A
- Authority
- JP
- Japan
- Prior art keywords
- film
- diffusion layer
- pzt
- ferroelectric
- storage device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 229910008484 TiSi Inorganic materials 0.000 claims abstract description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 2
- 229910052726 zirconium Inorganic materials 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052681 coesite Inorganic materials 0.000 abstract description 6
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 6
- 239000000377 silicon dioxide Substances 0.000 abstract description 6
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 6
- 229910052682 stishovite Inorganic materials 0.000 abstract description 6
- 229910052905 tridymite Inorganic materials 0.000 abstract description 6
- 230000010354 integration Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 6
- 239000012528 membrane Substances 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- -1 2 Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置上にＰＺＴ強誘電体膜コンデンサを
形成し、該ＰＺＴ強誘電体膜コンデンサーの電荷蓄積作
用を記憶作用として用いる強誘電体記憶装置の構造に関
する。[Detailed Description of the Invention] [Industrial Application Field] The present invention is a ferroelectric film in which a PZT ferroelectric film capacitor is formed on a semiconductor device, and the charge storage function of the PZT ferroelectric film capacitor is used as a memory function. Regarding the structure of storage devices.
従来、半導体装置上にＰＺＴ強誘電体膜を形成した強誘
電体記憶装置は、Ｅｌｅｃｔｒｏｎｉｃｓ ／Ｆｅｂｒ
ｕａｒｙ １ Ｂ 、 １９８８ Ｐ、Ｐ、９１−９
５に示されている如く、まず、半導体装置が形成されて
成る基板上にＳ１Ｏ，膜等の誘電体膜を介して、前記半
導体装置における拡散層から前記誘電体膜に開けられた
コンタクト穴を通して、第１の電極が延在して形成され
、該電極上にＰＺＴ膜を部分的に形成し、更に、該ＰＺ
Ｔ膜上に第２の電極が形成されて成るのが通例であった
。Conventionally, a ferroelectric memory device in which a PZT ferroelectric film is formed on a semiconductor device is manufactured by Electronics/Febr.
uary 1 B, 1988 P, P, 91-9
5, first, on a substrate on which a semiconductor device is formed, a dielectric film such as an S1O film is passed through a contact hole made from a diffusion layer in the semiconductor device to the dielectric film. , a first electrode is formed to extend, a PZT film is partially formed on the electrode, and a PZT film is further formed on the PZT film.
Usually, a second electrode was formed on the T film.
しかし、上記従来技術によると、ＰＺＴ膜形成による強
誘電体記憶装置に大面積を要し、高集積化に向かないと
云う課題と、強誘電体膜形成領域を限定する為に、強誘
電体膜領域形成工程すなわち、ホト・エツチング工程が
余分に必要となると云う課題があった。However, according to the above-mentioned conventional technology, a ferroelectric memory device formed by forming a PZT film requires a large area and is not suitable for high integration. There is a problem in that an extra film region forming step, that is, a photo-etching step is required.
上記課題を解決するために、本発明は強誘電体記憶装置
に係り、
（１） 半導体基板上に拡散層領域を形成し、該拡散
層領域上に、ＰＺＴ膜を直接あるいは５１ｏ２膜等の誘
電体膜を介して、あるいはＴ１膜、ＴｉＮ膜、ＴｉＳｉ
膜やｐａ膜等の電極膜を介して形成する手段をとる事、
及び、（２） 半導体基板上に５ｉｎ２膜等の誘電体
膜を介してＰＺＴ膜を電極コンタクト部を除くほぼ全面
にわたって形成する手段をとる事、である。In order to solve the above problems, the present invention relates to a ferroelectric memory device. (1) A diffusion layer region is formed on a semiconductor substrate, and a PZT film is directly applied or a dielectric film such as a 51O2 film is applied on the diffusion layer region. Through body membranes, or T1 membrane, TiN membrane, TiSi
Taking a method of forming via an electrode film such as a membrane or a PA film,
and (2) to form a PZT film over almost the entire surface of the semiconductor substrate except for electrode contact portions via a dielectric film such as a 5in2 film.
（１） 半導体装置基板に開けるコンタクト穴部に限
定してＰＺＴ膜による電荷蓄積領域を設げる事は、強誘
電体記憶装置の集積度を向上する作用がある。又、
（２）ＰＺＴ膜は、絶縁膜であり、記憶部以外に形成し
ても、層間絶縁膜としての作用を果す事が出来、記憶領
域に限定する必要はな（、ＰＺＴ膜形成後にホト・エツ
チング工程を要する事がない等の作用がある。(1) Providing a charge storage region made of a PZT film only in a contact hole formed in a semiconductor device substrate has the effect of improving the degree of integration of a ferroelectric memory device. (2) The PZT film is an insulating film, and even if it is formed in areas other than the memory area, it can function as an interlayer insulating film, and there is no need to limit it to the memory area. - It has the effect of not requiring an etching process.
以下、実施例により本発明を詳述する。 Hereinafter, the present invention will be explained in detail with reference to Examples.
第１図は本発明の一実施例を示す強誘電体記憶装置の断
面図である。すなわち、３１基板１上には、拡散層、２
，ＳｉＯ２膜４．ゲートＳ１０．膜５、及びゲート電極
６から成るＭＯ３型Ｆ’Ｅ Ｔのコンタクト部にはＴｉ
５１膜３等のパリや、メタルが形成され、該ＭＯ８型Ｆ
ＥＴ表面全体にｐｚＴ膜７をスパッタ法等で形成後、該
ＰＺＴ膜７は記憶部９以外のコンタクト部は穴明けされ
、電極配線８が形成されて成る。FIG. 1 is a sectional view of a ferroelectric memory device showing one embodiment of the present invention. That is, on 31 substrate 1, there are a diffusion layer, 2
, SiO2 film 4. Gate S10. The contact part of the MO3 type F'ET consisting of the film 5 and the gate electrode 6 is made of Ti.
51 film 3 etc. and metal are formed, and the MO8 type F
After a pzT film 7 is formed over the entire ET surface by sputtering or the like, holes are formed in the PZT film 7 at contact areas other than the memory area 9, and electrode wirings 8 are formed.
ＴｉＳｉ膜３はＴｉ、Ｐ（１あるいはそれらの窒化する
いはシリサイド膜等であっても良く、又、記憶部９に於
ては薄いＳｉＯ２膜やＳｉ３Ｎ４膜等の誘電体膜であっ
ても良い。The TiSi film 3 may be Ti, P (1) or a nitrided or silicided film of these, and in the storage section 9 it may be a dielectric film such as a thin SiO2 film or Si3N4 film. .
又、ＰＺＴ膜７は必ずしもコンタクト部を除く全面に形
成する必要はなく、記憶部９に限定して形成されても良
いが、本願の特許請求の範囲第２項では、コンタクト部
を除く全面に形成する必要があるが記憶部９は必ずしも
拡散層２上に形成する必要はない。Further, the PZT film 7 does not necessarily need to be formed on the entire surface except for the contact portion, and may be formed only on the storage portion 9; Although it is necessary to form the memory section 9, it is not necessarily necessary to form it on the diffusion layer 2.
本発明により、集積度が高い強誘電体記憶装置が形成で
きる効果があり、製作工程が簡単にできる効果がある。According to the present invention, a ferroelectric memory device with a high degree of integration can be formed, and the manufacturing process can be simplified.
第１図は本発明の一実施例を示す強誘電体記憶装置の断
面図である。
１・・・・・・・・・Ｓ１基板
２・・・・・・・・・拡散層
５・・・・・・・・・ＴｉＳｉ膜
４・・・・・・・・・Ｓｉｎ、膜
５・・・・・・・・・ゲート５ｉｎ２１％６・・・・・
・・・ゲート電極
７・・・・・・・・・ＰＺＴ膜
８・・・・・・・・・電極配線
９・・・・・・・・・記憶部
以上
出願人 セイコーエプソン株式会社FIG. 1 is a sectional view of a ferroelectric memory device showing one embodiment of the present invention. 1...S1 substrate 2...Diffusion layer 5...TiSi film 4...Sin, film 5 ......Gate 5in21%6...
... Gate electrode 7 ... PZT film 8 ... Electrode wiring 9 ... Memory section and above Applicant: Seiko Epson Corporation
Claims (2)
層領域上には鉛・ジルコニウム・チタン酸（ＰＺＴ）か
ら成る強誘電体膜が、直接あるいはＳｉＯ＿２膜等の誘
電体膜を介して、あるいはＴｉ膜、ＴｉＮ膜、ＴｉＳｉ
膜やＰｄ膜等の電極膜を介して形成されて成る事を特徴
とする強誘電体記憶装置。(1) A diffusion layer region is formed on the semiconductor substrate, and a ferroelectric film made of lead, zirconium, titanate (PZT) is formed on the diffusion layer region, either directly or through a dielectric film such as a SiO_2 film. Or Ti film, TiN film, TiSi
A ferroelectric memory device characterized in that it is formed through an electrode film such as a film or a Pd film.
て、鉛、ジルコニウム、チタン酸から成る強誘電体膜が
電極コンタクト部を除くほぼ全面にわたって形成されて
成る事を特徴とする強誘電体記憶装置。(2) A ferroelectric device characterized in that a ferroelectric film made of lead, zirconium, and titanic acid is formed on a semiconductor substrate via a dielectric film such as a SiO_2 film over almost the entire surface excluding the electrode contact portion. Body memory device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63078938A JPH01251760A (en) | 1988-03-31 | 1988-03-31 | Ferroelectric storage device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63078938A JPH01251760A (en) | 1988-03-31 | 1988-03-31 | Ferroelectric storage device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01251760A true JPH01251760A (en) | 1989-10-06 |
Family
ID=13675822
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63078938A Pending JPH01251760A (en) | 1988-03-31 | 1988-03-31 | Ferroelectric storage device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01251760A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03218680A (en) * | 1990-01-24 | 1991-09-26 | Toshiba Corp | Semiconductor memory device and manufacture thereof |
| WO1991016731A1 (en) * | 1990-04-24 | 1991-10-31 | Seiko Epson Corporation | Semiconductor device having ferroelectric material and method of producing the same |
| WO1991019321A1 (en) * | 1990-06-01 | 1991-12-12 | Seiko Epson Corporation | Method of manufacturing semiconductor device |
| WO1991019322A1 (en) * | 1990-06-01 | 1991-12-12 | Seiko Epson Corporation | Method of manufacturing semiconductor device |
| WO1992002050A1 (en) * | 1990-07-24 | 1992-02-06 | Seiko Epson Corporation | Semiconductor device provided with ferroelectric material |
| WO1992002048A1 (en) * | 1990-07-24 | 1992-02-06 | Seiko Epson Corporation | Method of manufacturing semiconductor device |
| WO1992002049A1 (en) * | 1990-07-24 | 1992-02-06 | Seiko Epson Corporation | Semiconductor device |
| WO1992002955A1 (en) * | 1990-08-07 | 1992-02-20 | Seiko Epson Corporation | Semiconductor device |
| US5343353A (en) * | 1991-08-28 | 1994-08-30 | Hitachi, Ltd. | Semiconductor device and process of producing the same |
| US5384729A (en) * | 1991-10-28 | 1995-01-24 | Rohm Co., Ltd. | Semiconductor storage device having ferroelectric film |
| EP1244144A1 (en) * | 1999-12-14 | 2002-09-25 | Matsushita Electric Industrial Co., Ltd. | Nonvolatile memory and method of driving nonvolatile memory |
| US6940741B2 (en) | 1990-08-03 | 2005-09-06 | Hitachi, Ltd. | Semiconductor memory device and methods of operation thereof |
-
1988
- 1988-03-31 JP JP63078938A patent/JPH01251760A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03218680A (en) * | 1990-01-24 | 1991-09-26 | Toshiba Corp | Semiconductor memory device and manufacture thereof |
| WO1991016731A1 (en) * | 1990-04-24 | 1991-10-31 | Seiko Epson Corporation | Semiconductor device having ferroelectric material and method of producing the same |
| KR100349999B1 (en) * | 1990-04-24 | 2002-12-11 | 세이코 엡슨 가부시키가이샤 | Semiconductor device with ferroelectric and manufacturing method |
| WO1991019321A1 (en) * | 1990-06-01 | 1991-12-12 | Seiko Epson Corporation | Method of manufacturing semiconductor device |
| WO1991019322A1 (en) * | 1990-06-01 | 1991-12-12 | Seiko Epson Corporation | Method of manufacturing semiconductor device |
| WO1992002049A1 (en) * | 1990-07-24 | 1992-02-06 | Seiko Epson Corporation | Semiconductor device |
| WO1992002048A1 (en) * | 1990-07-24 | 1992-02-06 | Seiko Epson Corporation | Method of manufacturing semiconductor device |
| WO1992002050A1 (en) * | 1990-07-24 | 1992-02-06 | Seiko Epson Corporation | Semiconductor device provided with ferroelectric material |
| US6940741B2 (en) | 1990-08-03 | 2005-09-06 | Hitachi, Ltd. | Semiconductor memory device and methods of operation thereof |
| WO1992002955A1 (en) * | 1990-08-07 | 1992-02-20 | Seiko Epson Corporation | Semiconductor device |
| US5343353A (en) * | 1991-08-28 | 1994-08-30 | Hitachi, Ltd. | Semiconductor device and process of producing the same |
| US5384729A (en) * | 1991-10-28 | 1995-01-24 | Rohm Co., Ltd. | Semiconductor storage device having ferroelectric film |
| EP1244144A1 (en) * | 1999-12-14 | 2002-09-25 | Matsushita Electric Industrial Co., Ltd. | Nonvolatile memory and method of driving nonvolatile memory |
| EP1244144A4 (en) * | 1999-12-14 | 2007-01-03 | Matsushita Electric Ind Co Ltd | Nonvolatile memory and method of driving nonvolatile memory |
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