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JPH01204419A - Charged beam exposure system - Google Patents

Charged beam exposure system

Info

Publication number
JPH01204419A
JPH01204419A JP2946788A JP2946788A JPH01204419A JP H01204419 A JPH01204419 A JP H01204419A JP 2946788 A JP2946788 A JP 2946788A JP 2946788 A JP2946788 A JP 2946788A JP H01204419 A JPH01204419 A JP H01204419A
Authority
JP
Japan
Prior art keywords
charged beam
wafer
cassette holder
mark
positioning accuracy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2946788A
Other languages
Japanese (ja)
Inventor
Ken Nakajima
中島 謙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP2946788A priority Critical patent/JPH01204419A/en
Publication of JPH01204419A publication Critical patent/JPH01204419A/en
Pending legal-status Critical Current

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  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To improve positioning accuracy, by measuring the positioning accuracy of a cassette holder for fixing a wafer, adding the amount of accuracy to the scanning width of a charged beam, detecting a mark for positioning the wafer at the time of charged beam exposure, and determining the position of the wafer. CONSTITUTION:Before the detection of a mark 3 on a wafer 2, infrared rays or a laser beam 8 is projected on a recognizing mark 6 that is attached to a cassette holder 5. The cassette holder 5 that is used at that time is recognized with a detector 9. A signal of positioning accuracy inherent to the cassette holder is sent to a projection controller 11 with a signal processing means 10. The signal is inputted into a position controller 12 so that a charged beam 1a is made to scan by a distance obtained by subtracting the inherent error of the recognized cassette holder 5. The position controller 12 is controlled, and the charged beam 1a is made to scan on a mark 3 by the distance of the signal, and the position of the wafer is determined. Thus, the positioning accuracy of the wafer can be improved.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は基板上もしくは薄膜上の荷電ビームエネルギー
を吸収して反応するレジストに、荷電ビームの照射によ
り所望パターンを露光する荷電ビーム露光装置に関する
Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a charged beam exposure apparatus that exposes a desired pattern by irradiating a charged beam onto a resist that absorbs and reacts with charged beam energy on a substrate or a thin film. .

〔従来の技術〕[Conventional technology]

従来、基板上もしくは薄膜上の荷電ビームを吸収して反
応するレジストに、荷電ビームの照射により所望パター
ンを露光する場合には、カセットホルダー上にウェハを
固定し、ウェハ上に作られたマークを荷電ビームで検出
してウェハの位置決め後、荷電ビームの露光を行い、そ
して順次数個の違ったカセットホルダーを使用して荷電
ビームの露光を行っている。
Conventionally, when exposing a desired pattern by irradiating a charged beam onto a resist that absorbs and reacts with a charged beam on a substrate or a thin film, the wafer is fixed on a cassette holder and the marks made on the wafer are After positioning the wafer by detecting it with a charged beam, exposure to the charged beam is performed, and several different cassette holders are sequentially used to perform the exposure to the charged beam.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

荷電ビームの露光の際のウェハ位置決めに直接ウェハ上
に作製されたマークを使用するため、ウェハの固定に使
用されるカセットホルダー間の作製時等に生じる位置決
め精度(誤差)はおよそ±30−を含めた精度でマーク
の検出を行わなくてはならない、そのため、ウェハ上に
位置決め用マークを作製する際、カセットホルダーに固
有の誤差を含んだ大きさのマークを作製しなければなら
ない。
Since marks made directly on the wafer are used to position the wafer during charged beam exposure, the positioning accuracy (error) that occurs during the preparation of the cassette holders used to fix the wafer is approximately ±30. Therefore, when creating positioning marks on the wafer, it is necessary to create marks with a size that includes errors specific to the cassette holder.

このため、荷電ビームによるウェハ上の描画範囲が狭く
なり、ウェハの位置決め精度も低いものとなっている。
For this reason, the drawing range on the wafer by the charged beam becomes narrow, and the accuracy of positioning the wafer is also low.

本発明の目的は上記問題点を解消した荷電ビーム露光装
置を提供することにある。
An object of the present invention is to provide a charged beam exposure apparatus that solves the above problems.

〔課題を解決するための手段〕[Means to solve the problem]

上記目的を達成するために、本発明の荷電ビーム露光装
置においては、基板上もしくは薄膜上の荷電ビームエネ
ルギーを吸収して反応するレジストに、荷電ビームを照
射して所望パターンを露光する荷電ビームの露光装置に
おいて、ウェハの固定に用いるカセットホルダーに備え
たそのカセットホルダー認識用のグリッドもしくは穴等
による固有の識別標識と、荷電ビームの露光の直前にカ
セットホルダーの識別W識を検出する手段と、荷電ビー
ム露光時のウェハ上に作製されたマークの検出による位
置決めの際に、検出された特定のカセットホルダーにつ
いて予め測定しておいた当該カセットホルダーに固有の
位置決め精度(誤差)をオフセットとしてかさ上げして
マークの検出を行う手段と、ウェハの位置決め後、荷電
ビームを露光する手段とを備えたものである。
In order to achieve the above object, the charged beam exposure apparatus of the present invention uses a charged beam to expose a desired pattern by irradiating a resist that absorbs and reacts with charged beam energy on a substrate or a thin film. In the exposure apparatus, a unique identification mark such as a grid or hole for recognizing the cassette holder provided on a cassette holder used for fixing the wafer, and means for detecting the identification mark of the cassette holder immediately before exposure to the charged beam; When positioning is performed by detecting marks created on the wafer during charged beam exposure, the positioning accuracy (error) unique to the detected cassette holder is measured in advance and raised as an offset. The device is equipped with a means for detecting a mark and a means for exposing the wafer to a charged beam after positioning the wafer.

〔作用〕[Effect]

予め使用される数個の形状が違ったウェハ固定用カセッ
トホルダーの位置決め精度を測定しておき、その精度分
はど、荷電ビームの走査幅にかさ上げして荷電ビーム露
光時のウェハの位置決めのためのマーク検出をしてウェ
ハの位置決めを行うため、ウェハ上に作製される位置決
め用マークを約2004’から約1404’と約604
 ’小さくすることが可能となリウェハ上の荷電ビーム
による露光範囲が広くなり、位置決め精度も±30p向
上する。
The positioning accuracy of several different shaped wafer fixing cassette holders used is measured in advance, and the accuracy is increased to the scanning width of the charged beam to improve wafer positioning during charged beam exposure. In order to position the wafer by detecting marks, the positioning marks made on the wafer are changed from about 2004' to about 1404' and about 604'.
'The exposure range by the charged beam on the rewafer, which can be made smaller, becomes wider, and the positioning accuracy improves by ±30p.

〔実施例〕〔Example〕

以下、本発明を実施例とその図面を参照して詳細に説明
する。
Hereinafter, the present invention will be explained in detail with reference to embodiments and drawings thereof.

第1図は本発明を実施した荷電ビーム露光装置の一例を
示す構成図である0図において、荷電ビーム露光装置は
荷電ビームの銃1から発射された荷電ビーム1aを、ウ
ェハ2上に作製されたマーク3に照射し、走査させてウ
ェハの位置決めを行い、ウェハ上のレジストに所望パタ
ーンを露光するものであるが、本発明はカセットホルダ
ー5に、当該ホルダーに固有の識別標識、例えばグリッ
ドもしくは六6を備えている。一方、この識別標識6の
検出手段として赤外線もしくはレーザ装置7と、識別標
識6のグリッドもしくは六6を透過した赤外線もしくは
レーザ8を検知する検出器9を有し、ポジションディフ
レクタ−4はこの検出器9の信号に基づいて制御される
が、その制御手段として信号処理手段10、照射制御装
置11、ポジションコントローラ12を備えている。信
号処理手段10は使用すべきカセットホルダー毎に予め
測定されたカセットホルダーに固有の位置決め精度(誤
差)を記憶しており、照射制御装置11は認識されたカ
セットホルダーについての位置決め精度信号を受は取り
、その精度をオフセットとしてかさ上げした補正信号を
出力し、ポジションコントローラ12はその出力信号を
もってマーク3の検出を含め、ポジションディフレクタ
−4を駆動するものである。
FIG. 1 is a block diagram showing an example of a charged beam exposure apparatus embodying the present invention. In FIG. The cassette holder 5 is provided with an identification mark unique to the holder, such as a grid or It has 66. On the other hand, the detection means for the identification mark 6 includes an infrared ray or laser device 7 and a detector 9 for detecting the infrared ray or laser 8 transmitted through the grid or 66 of the identification mark 6. It is controlled based on the signal of 9, and is provided with a signal processing means 10, an irradiation control device 11, and a position controller 12 as its control means. The signal processing means 10 stores the positioning accuracy (error) unique to each cassette holder measured in advance for each cassette holder to be used, and the irradiation control device 11 receives the positioning accuracy signal for the recognized cassette holder. The position controller 12 uses the output signal to detect the mark 3 and drive the position deflector 4.

具体的な制御要領は以下の順序で行われる。すなわち、
荷電ビーム1aは途中、照射レンズ、整形レンズ、縮小
レンズ、対物レンズ(いずれも図示路)を通り、ポジシ
ョンディフレクタ−4にて走査され、ウェハ2上のマー
ク3の検出が行われる。このマーク検出に先立ち、カセ
ットホルダー5に付けられたグリッドもしくは穴などに
よる識別標識6に赤外線もしくはレーザ装置7から照射
された赤外線もしくはレーザビーム8を照射し、検出器
9でその時使用されているカセットホルダー5を認識し
、信号処理手段10によってそのカセットホルダーに固
有の位置決め精度(誤差)の信号を照射制御袋[11に
送り、認識されたカセットホルダー5に固有の誤差を差
し引いた距離だけ荷電ビーム1aを走査させるようにポ
ジションコントローラ12に信号を入力し、ポジション
コントローラ12を制御してその信号の距離だけマーク
3上での荷電ビーム1aの走査を行い、ウェハ2の位置
決めを行う。
The specific control procedure is performed in the following order. That is,
On the way, the charged beam 1a passes through an irradiation lens, a shaping lens, a reduction lens, and an objective lens (all paths shown in the figure), is scanned by a position deflector 4, and a mark 3 on the wafer 2 is detected. Prior to this mark detection, an identification mark 6 made of a grid or a hole attached to the cassette holder 5 is irradiated with infrared rays or a laser beam 8 emitted from a laser device 7, and a detector 9 detects the cassette being used at the time. The holder 5 is recognized, and the signal processing means 10 sends a signal indicating the positioning accuracy (error) specific to the cassette holder to the irradiation control bag [11], and the charged beam is emitted by a distance equal to the error specific to the recognized cassette holder 5. A signal is input to the position controller 12 to scan the wafer 1a, and the position controller 12 is controlled to scan the charged beam 1a over the mark 3 by the distance of the signal, thereby positioning the wafer 2.

次いで荷電ビームによる所望パターンの露光を行う。Next, a desired pattern is exposed to a charged beam.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によればウェハ固定用カセッ
トホルダーに固有の位置決め精度(誤差)を含ませずに
ウェハの位置決めが可能となり、その結果ウェハ上に作
製されるマークを小さくすることができ、ウェハ上の荷
電ビームの描画範囲を拡大できる効果を有するものであ
る。
As explained above, according to the present invention, it is possible to position the wafer without including the positioning accuracy (error) inherent in the cassette holder for fixing the wafer, and as a result, the marks made on the wafer can be made smaller. This has the effect of expanding the writing range of the charged beam on the wafer.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を示す構成図である。 1・・・荷電ビーム銃     1a・・・荷電ビーム
2・・・ウェハ        3・・・マーク4・・
・ポジションディフレクタ− 5・・・カセットホルダー 6・・・グリッドもしくは穴による識別標識7・・・赤
外線もしくはレーザ装置 8・・・赤外線もしくはレーザ 9・・・検出器10・
・・信号処理手段     11・・・照射制御装置1
2・・・ポジションコントローラ 第1図
FIG. 1 is a block diagram showing an embodiment of the present invention. 1...Charged beam gun 1a...Charged beam 2...Wafer 3...Mark 4...
・Position deflector 5...Cassette holder 6...Identification mark by grid or hole 7...Infrared rays or laser device 8...Infrared rays or laser 9...Detector 10.
...Signal processing means 11...Irradiation control device 1
2...Position controller Figure 1

Claims (1)

【特許請求の範囲】[Claims] 1、基板上もしくは薄膜上の荷電ビームエネルギーを吸
収して反応するレジストに、荷電ビームを照射して所望
パターンを露光する荷電ビームの露光装置において、ウ
ェハの固定に用いるカセットホルダーに備えたそのカセ
ットホルダー認識用のグリッドもしくは穴等による固有
の識別標識と、荷電ビームの露光の直前にカセットホル
ダーの識別標識を検出する手段と、荷電ビーム露光時の
ウェハ上に作製されたマークの検出による位置決めの際
に、検出された特定のカセットホルダーについて予め測
定しておいた当該カセットホルダーに固有の位置決め精
度(誤差)をオフセットとしてかさ上げしてマークの検
出を行う手段と、ウェハの位置決め後、荷電ビームを露
光する手段とを備えたことを特徴とする荷電ビーム露光
装置。
1. A cassette installed in a cassette holder used to fix a wafer in a charged beam exposure device that exposes a desired pattern by irradiating a charged beam onto a resist that absorbs and reacts with charged beam energy on a substrate or thin film. A unique identification mark such as a grid or hole for holder recognition, a means for detecting the identification mark of the cassette holder immediately before exposure to a charged beam, and a positioning method by detecting marks made on the wafer during exposure to a charged beam. In this case, a means for detecting the mark by increasing the positioning accuracy (error) unique to the detected cassette holder, which has been measured in advance as an offset, and a means for detecting the mark by increasing the positioning accuracy (error) unique to the detected cassette holder in advance, and after positioning the wafer, the charged beam 1. A charged beam exposure apparatus comprising: means for exposing.
JP2946788A 1988-02-09 1988-02-09 Charged beam exposure system Pending JPH01204419A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2946788A JPH01204419A (en) 1988-02-09 1988-02-09 Charged beam exposure system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2946788A JPH01204419A (en) 1988-02-09 1988-02-09 Charged beam exposure system

Publications (1)

Publication Number Publication Date
JPH01204419A true JPH01204419A (en) 1989-08-17

Family

ID=12276906

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2946788A Pending JPH01204419A (en) 1988-02-09 1988-02-09 Charged beam exposure system

Country Status (1)

Country Link
JP (1) JPH01204419A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6132910A (en) * 1997-12-04 2000-10-17 Nec Corporation Method of implementing electron beam lithography using uniquely positioned alignment marks and a wafer with such alignment marks
JP2005515458A (en) * 2002-01-22 2005-05-26 レニショウ パブリック リミテッド カンパニー Reconfigurable sample holder

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6132910A (en) * 1997-12-04 2000-10-17 Nec Corporation Method of implementing electron beam lithography using uniquely positioned alignment marks and a wafer with such alignment marks
JP2005515458A (en) * 2002-01-22 2005-05-26 レニショウ パブリック リミテッド カンパニー Reconfigurable sample holder

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