JPH01186579A - Microgap type surge absorption element - Google Patents

Abstract

PURPOSE:To improve life characteristic by arranging an insulation inorganic material member having a diameter smaller than that of a seal electrode so as to be held between the both ends of a microgap element and both end seal electrodes. CONSTITUTION:Insulation inorganic material members 3 and 3 are arranged between gaps 2 and 2 and seal electrodes 4 and 4 respectively at both ends of a microgap element 1. The diameter of the members 3 and 3 is formed smaller than that of the electrodes 4 and 4. In the microgap type surge absorption element having the constitution mentioned above, the arc discharge generated at the time of the action of the element is made to arise at a place apart beyond the microgap, The life of a surge absorption element can be prolonged even the electric discharge by an impulse repeat impression arises since the film of the microgap element and the gap are not damaged by an arc.

Description

Detailed Description of the Invention [Industrial Field of Application] The present invention provides an electrode sealed at both ends in a sealed glass tube and a microphone [1
A micro-gap type device having an insulating inorganic material member between both ends of the gap element and the gap. More specifically, this article relates to a surge absorbing element manufactured by J Gear Tsubu, a microphone with improved life characteristics against repeated application of impulses.

[Prior Art] In general, a surge absorbing element is used when the operating voltage I is higher than the maximum circuit voltage of the circuit to which the surge absorbing element is attached.
Install the surge absorption element set to E.

The surge absorbing element operates only when a momentary overvoltage such as a lightning surge enters the circuit, and the surge absorption element
T protects one part. Does the conventional micro-gap type surge absorption element cause arc discharge during operation? conductive coating on the microgap element and - to pass through the microgap L.

Arc discharge tends to deteriorate the conductive film and the micro-gap, thereby deteriorating the characteristics of the surge absorbing element [Problem to be solved by the invention] The present invention is directed to a one-gap surge absorbing element with microphone supervision.・Sealing inside the sealed glass tube +1-. TtC pole and microphone [! An insulating inorganic material member is placed between the gap #: r- and the gap at both ends, so that arc discharge occurs between the seal II: electrodes, and the arc discharge is caused by the conductive 1V coating and the microphone [Jr.
.

By passing the gear away from the gear.

It is an object of the present invention to provide a microgap type surge absorbing element that minimizes the influence of arc discharge on a conductive film and a microgap, and has improved life characteristics against repeated application of impulses.

[Structure of the Invention] [Means for Solving the Problems] The present invention provides a sealing electrode between the sealing electrode in the sealing glass tube of the microgap type surge absorbing element and the gap at both ends of the microgap element. This is a micro-gap type straight absorption element (f) characterized in that it is installed with an insulating inorganic material member having a diameter smaller than the diameter thereof sandwiched therebetween.

[Function] According to the present invention, by inserting and installing a member of an insulating inorganic material between the sealing electrode in the glass tube of the microphone [1 gap type surge absorption element and the gap at both ends of the microphone [1 gap element T-] When an overvoltage is applied, arc discharge occurs between the sealing electrodes of the micro-gear type surge absorbing element, and an adverse effect on the surface of the micro-gap element can be avoided.

According to the present invention, an insulating inorganic material member having a diameter smaller than the sealing electrode is inserted between the gaps at both ends of the microgap element and the sealing electrode in the sealing glass tube of the microgap type surge absorption element. By causing the arc discharge that occurs when an impulse is applied to a position away from the microphone gap, the arc discharge is generated at a position floating from the conductive film and the micro gap.
It is possible to reduce the influence of arc discharge on the conductive film and microgap, and improve the life characteristics against repeated application of impulses.

On the other hand, with a normal microphone [l-gap type surge absorbing element, no discharge occurs near the micro-gap,
Eventually, the arc discharge shifts from gap to gap. When this arc discharge passes through the film and the microphone rJ (Yap), the conductive film and the micros are used to prevent deterioration of the Yap.However, in the structure of the micro-gap type surge absorption element according to the present invention, the arc discharge is sealed. Since the arc discharge occurs between the electrodes, the arc discharge passes through a position distant from the microgap surface, and the arc discharge does not pass over the surface, thereby preventing deterioration of the coating of the microgap element and the gap.

That is, in the discharge mechanism of the microgap type surge absorbing element of the present invention, electron emission occurs in the microgap having a small capacitance, so that the discharge delay is the same as that of the conventional device.

The insulating inorganic material member installed according to the present invention is an insulating material having a diameter smaller than that of the sealed IL electrode between the sealed electrode inside the sealed glass tube of the microphone [l-gap type surge absorption element] and the micro-gap element. An inorganic material member is inserted and installed. The shape of the insulating inorganic material member is preferably a circular plate, but the diameter of the insulating inorganic material member is not particularly limited.
L.

If the diameter of the sealed electrode is , then there is a relationship of DI<DI.

Suitable materials for the insulating inorganic material member include alumina, mullite, holsterite, steatite, zirconia, etc., which have good insulation properties, are dense, and have good heat resistance.
It is not limited to those.

The thickness of this insulating inorganic material member is preferably as follows.

Although it is 0.1 to 0.5 m, it is not particularly limited to this.

Next, a micro-gap type surge absorbing element in which the insulating inorganic material member of the present invention is sandwiched between the gaps at both ends of the micro-gap element and the sealing electrode in a sealed glass tube will be explained using a specific example. 1. The present invention is not limited to the following description.

[Example 1] This example is shown in cross section in FIG. 1. In this example, a microgap element 1 sealed in a sealed glass tube 5
A gap 2.2 is provided at both ends of the microgap element f1, and an insulating inorganic material member 3,
3 is installed. Furthermore, there is a sealing electrode 4.4 on the outside.
is installed. Lead wires 6.6 are connected to each of the sealing electrodes 4.4 as shown in the figure.

As this insulating inorganic material member, V, (DC discharge starting voltage) was measured when using an alumina plate with a thickness of 0.2 mm and when using a zirconia plate with a thickness of 0.4 mm. When a shock voltage impulse [(wavefront length 1.2 μsec, wave tail length 50 μsec) wave height value 10 kV] was applied, V+− (impulse response voltage) was measured. The results are shown in Table 1.Comparative Example 1 is the value measured using a micro-gap type surge absorbing element in which no insulating inorganic material member is inserted according to the present invention.

Comparative Example -- 1800V 3000V Next, a life test was carried out by repeatedly applying a marking shock voltage impulse [(wavefront length 1.2 μsec, wave tail length 50 μsec), peak value 10 kV]. The results are shown in the graph of FIG. 2, where the vertical axis represents the DC discharge starting voltage and the horizontal axis represents the number of applications. By repeatedly applying impulses, the DC number Nr of the surge absorbing element
A: Although the starting voltage characteristics deteriorate, it is clear that the life characteristics of the micro-gap surge absorbing element of the present invention, which has a structure in which insulating inorganic material members are sandwiched, are improved compared to conventional products. .

[Effects of the Invention] The surge absorption element of the present invention has a structure in which an insulating inorganic material member is sandwiched between the counter electrode and the microphone 11 gap element.

Technical effects were obtained, such as being able to provide a micro-gap surge absorbing element whose response characteristics to impulses are the same as those of conventional micro-gap surge absorbing elements, and whose life characteristics are improved when impulses are repeatedly applied.

[Brief explanation of the drawing]

FIG. 1 is a sectional view showing the structure of a micro-gap type surge absorbing element according to the present invention. FIG. 2 is a graph showing the results of measuring changes in the DC discharge starting voltage due to repeated application of impulses using the micro-gap surge absorbing element having the structure according to the present invention. [Explanation of symbols of main parts] 1. Microgap element 2. Gap 3. Insulating inorganic material member 4'. Sealing xm 5. , sealed glass tube

Claims (1)

[Claims] An insulating inorganic material member having a diameter smaller than the diameter of the sealing electrode is provided between the sealing electrode at both ends in the sealing glass tube of the microgap type surge absorption element and the gap at both ends of the microgap element. A micro-gap type surge absorption element characterized by being installed in a sandwiched form.