JPH01179798A - Method for growing semiconductor crystal - Google Patents
Method for growing semiconductor crystalInfo
- Publication number
- JPH01179798A JPH01179798A JP232988A JP232988A JPH01179798A JP H01179798 A JPH01179798 A JP H01179798A JP 232988 A JP232988 A JP 232988A JP 232988 A JP232988 A JP 232988A JP H01179798 A JPH01179798 A JP H01179798A
- Authority
- JP
- Japan
- Prior art keywords
- gaas
- inp
- layer
- crystal
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 239000013078 crystal Substances 0.000 title abstract description 17
- 238000000034 method Methods 0.000 title description 8
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 30
- 238000000197 pyrolysis Methods 0.000 claims description 5
- 238000002109 crystal growth method Methods 0.000 claims description 2
- 125000002524 organometallic group Chemical group 0.000 abstract description 5
- 239000000463 material Substances 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 241000219051 Fagopyrum Species 0.000 description 1
- 235000009419 Fagopyrum esculentum Nutrition 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はＩｎＰ基板上のＧａＡｓ系半導体結晶の成長方
法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for growing a GaAs-based semiconductor crystal on an InP substrate.
（従来の技術）
Ｓｉ基板上のＧａＡｓやＧａＡｓ基板上のＩｎＰ等の格
子不整系のへテロエピタキシャル成長の研究が各所で行
われている。その中でもＩｎＰ基板上のＧａＡｓの成長
は、ＩｎＰ系を用いた長波長帯の光素子とＧａＡｓを用
いた高速の電子素子とを同一基板上に集積した光電子集
積回路（ＯＥＩＣ）の実用化の為に必要不可欠な技術で
ある。(Prior Art) Research on heteroepitaxial growth of lattice mismatched systems such as GaAs on a Si substrate and InP on a GaAs substrate is being conducted in various places. Among these, the growth of GaAs on InP substrates is important for the practical use of optoelectronic integrated circuits (OEICs), which integrate long-wavelength optical devices using InP and high-speed electronic devices using GaAs on the same substrate. This is an essential technology.
これまでＩｎＰ基板上にＧａＡｓを成長した例としては
笠原らが第４８回応用物理学会学術講演会に発表し、同
犬会講演予稿集１９ｐ−Ｗ−１４、第２０２頁に報告し
たものがある。これは分子線エピタキシャル成長法を用
いており、ＩｎＰ基板上に良好なＧａＡｓ結晶を得てい
る。この例では、前処理でＩｎＰ基板表面に良質の酸化
膜を形成し、これを超真空中でＡｓ４ビーム照射雰囲気
でスパイク昇温し酸化膜の脱離をはかり、ＩｎＰ基板表
面の清浄化をおこないこの上にＧａＡｓ半導体層を成長
することにより良好な結晶を得ている。An example of growing GaAs on an InP substrate so far is the one presented by Kasahara et al. at the 48th Annual Conference of the Japan Society of Applied Physics and reported in the Society's Conference Proceedings 19p-W-14, p. 202. . This uses a molecular beam epitaxial growth method and obtains a good GaAs crystal on an InP substrate. In this example, a high-quality oxide film is formed on the InP substrate surface in pretreatment, and this is spiked to temperature in an As4 beam irradiation atmosphere in an ultra-vacuum to remove the oxide film and clean the InP substrate surface. A good crystal is obtained by growing a GaAs semiconductor layer on this.
（発明が解決しようとする問題点）
有機金属熱分解法によＶ） ＩｎＰ基板上にＧａＡｓ層
を成長する場合、分子線エピタキシャル成長法の場合と
同様にＩｎＰ基板表面を清浄化する必要がある。(Problems to be Solved by the Invention) When growing a GaAs layer on an InP substrate by the organometallic pyrolysis method, it is necessary to clean the surface of the InP substrate as in the case of the molecular beam epitaxial growth method.
ところが有機金属熱分解法によりＩｎＰ基板上にＧａＡ
ｓ層を成長する場合、超真空中でのＡｓ４ビーム照射と
いうようなことはできず、ＩｎＰ基板の前処理のエツチ
ング後に形成された酸化膜が充分に除去されずＩｎＰ基
板表面を清浄化するのがむずかしく、ＩｎＰ基板上に直
接成長すると結晶の表面モホロジーが低下し白濁すると
いう問題点があった。However, GaA was deposited on an InP substrate using an organometallic pyrolysis method.
When growing the s-layer, As4 beam irradiation in an ultra-vacuum is not possible, and the oxide film formed after etching in the pretreatment of the InP substrate is not sufficiently removed, making it difficult to clean the InP substrate surface. However, when directly grown on an InP substrate, the surface morphology of the crystal deteriorates and the crystal becomes cloudy.
（問題点を解決するための手段）
本発明は、有機金属熱分解法を用いて、ＩｎＰ基板上に
薄いＩｎＰバッファ層を成長させ、その上に連続してＧ
ａＡｓ系半導体層を成長することを特徴とする。(Means for Solving the Problems) The present invention uses an organometallic pyrolysis method to grow a thin InP buffer layer on an InP substrate, and then continuously forms a G
It is characterized by growing an aAs-based semiconductor layer.
（作用）
ＩｎＰ基板上にＧａＡｓ系半導体層を成長する際、Ｉｎ
Ｐ基板とＧａＡｓ系半導体層との間に薄いＩｎＰバッフ
ァ層を挾むことにより直接ＩｎＰ基板上にＧａＡｓ系半
導体層を成長するよりも良好なＧａＡｓ系半導体結晶を
得ることができる。(Function) When growing a GaAs-based semiconductor layer on an InP substrate, In
By sandwiching a thin InP buffer layer between the P substrate and the GaAs semiconductor layer, a better GaAs semiconductor crystal can be obtained than by directly growing the GaAs semiconductor layer on the InP substrate.
これは、前処理時のエツチングの後、−度空気中にさら
されたために酸化膜が形成されたＩｎＰ半導体基板表面
よりも、成長直後のＩｎＰ結晶面のほうが酸化膜も形成
されず、ＩｎＰの結晶性も高いためであり、直接ＩｎＰ
基板上にＧａＡｓ系半導体層を成長するよりも良好なＧ
ａＡｓ系半導体結晶を得ることができる。This is because no oxide film is formed on the InP crystal surface immediately after growth than on the surface of the InP semiconductor substrate, which has an oxide film formed due to exposure to air after pretreatment. This is due to the high crystallinity, and direct InP
Better G than growing a GaAs-based semiconductor layer on the substrate
An aAs-based semiconductor crystal can be obtained.
（実施例）
本発明によるＩｎＰ基板上のＧａＡｓ層は次のようにし
て成長される。第１図は成長後のウェハの断面図である
。(Example) A GaAs layer on an InP substrate according to the present invention is grown as follows. FIG. 1 is a cross-sectional view of the wafer after growth.
まず、有機金属熱分解法によりＩｎＰ基板１上にノンド
ープのＩｎＰｎソバ２フフ
１００Ｔｏｒｒで厚さ約０．１１１ｍ成長する。つぎに
ＧａＡｓ層３を７００°Ｃで厚さ約１．０ｐｍ成長し、
成長を終る。First, a non-doped InPn substrate 1 is grown to a thickness of about 0.111 m at 100 Torr on an InP substrate 1 by an organometallic pyrolysis method. Next, a GaAs layer 3 is grown at 700°C to a thickness of about 1.0 pm.
Finish growing.
この半導体結晶の移動度を測定したところ、室温で３０
００−４０００ｃｍ２／ＶｓでありＧａＡｓ基板上に成
長したＧａＡｓ系半導体層と比べて遜色ないものが得ら
れている。When we measured the mobility of this semiconductor crystal, we found that it was 30% at room temperature.
00-4000 cm2/Vs, which is comparable to that of a GaAs-based semiconductor layer grown on a GaAs substrate.
なお、本実施例ではＧａＡｓを成長したが、これに限ら
ずＡｌＧａＡｓ， ＧａＩｎＰ＆Ｊ＝ＧａＡｓに格子整
合するものでもよい。また本実施例ではＩｎＰｎソバ２
フフさを０．１ｐｍとしたが、これは表面の清浄化がは
かられる厚さであれば厚さはこの厚さに限るものではな
い。例えば２００人程変型で薄くしてもかまわない。ま
たドーピングもノンドープに限るものではない。また、
成長温度・成長圧力は、ＩｎＰ， ＧａＡｓ系半導体そ
れぞれの結晶が成長する範囲であれば他のものでもよい
。成長温度はＩｎＰは６００°Ｃでもよいし、ＧａＡｓ
は７５０〜８００°Ｃでもよい。また、ＧａＡｓ系半導
体層３の厚さおよびドーピングはこのＧａＡｓ系半導体
結晶にどういうデバイスを製作するかによって変わって
くるものであるので本実施例のものに限るものではない
。In this embodiment, GaAs is grown, but the material is not limited to this, and may be AlGaAs or a material that is lattice matched to GaInP&J=GaAs. In addition, in this embodiment, InPn buckwheat 2
Although the fluffiness is set to 0.1 pm, the thickness is not limited to this thickness as long as the surface can be cleaned. For example, it is okay to make it thinner by changing the shape by about 200 people. Further, doping is not limited to non-doping. Also,
The growth temperature and growth pressure may be other values as long as the crystals of InP and GaAs semiconductors grow. The growth temperature may be 600°C for InP, or 600°C for GaAs.
may be 750 to 800°C. Further, the thickness and doping of the GaAs-based semiconductor layer 3 are not limited to those of this embodiment, since they vary depending on what kind of device is manufactured using this GaAs-based semiconductor crystal.
（発明の効果）
本発明によれば、ＩｎＰ半導体基板上に直接ＧａＡｓ系
半導体層を成長した時には成長表面が白濁していたのに
対し、ピットもなくモホロジーも良好な鏡面のＧａＡｓ
系半導体結晶を得ることができる。(Effects of the Invention) According to the present invention, when a GaAs-based semiconductor layer was grown directly on an InP semiconductor substrate, the growth surface was cloudy, but the GaAs layer has a mirror-like surface with no pits and good morphology.
system semiconductor crystals can be obtained.
第１図は本発明の結晶成長法により成長したＩｎＰ基板
上のＧａＡｓ半導体の結晶の断面を示す図である。図に
おいて１はＩｎＰ基板、２はＩｎＰバッファ層、３はＧ
ａＡｓ系半導体層をあられす。
第１回
／ ： Ｉｎｆ差坂
ｚ：Ｊ♂！バッファ１
３ ： Ｑａ４ｓ不半導体眉FIG. 1 is a diagram showing a cross section of a GaAs semiconductor crystal on an InP substrate grown by the crystal growth method of the present invention. In the figure, 1 is an InP substrate, 2 is an InP buffer layer, and 3 is a G
Deposit the aAs-based semiconductor layer. 1st/: Inf difference slope z: J♂! Buffer 1 3: Qa4s non-semiconductor eyebrow
Claims (1)
Ｐバッファ層を成長させ、その上に連続してＧａＡｓ系
半導体層を成長することを特徴とする半導体結晶成長方
法。Thin In is deposited on an InP substrate using metal-organic pyrolysis.
A semiconductor crystal growth method characterized by growing a P buffer layer and continuously growing a GaAs-based semiconductor layer thereon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP232988A JPH01179798A (en) | 1988-01-07 | 1988-01-07 | Method for growing semiconductor crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP232988A JPH01179798A (en) | 1988-01-07 | 1988-01-07 | Method for growing semiconductor crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01179798A true JPH01179798A (en) | 1989-07-17 |
Family
ID=11526270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP232988A Pending JPH01179798A (en) | 1988-01-07 | 1988-01-07 | Method for growing semiconductor crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01179798A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0829934A1 (en) * | 1996-09-13 | 1998-03-18 | Alcatel | Method for fabricating an optoelectrical semiconductor device and a device or matrix of devices fabricated using said method |
| FR2753576A1 (en) * | 1996-09-13 | 1998-03-20 | Alsthom Cge Alcatel | METHOD FOR MANUFACTURING A SURFACE EMITTING SEMICONDUCTOR LASER |
-
1988
- 1988-01-07 JP JP232988A patent/JPH01179798A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0829934A1 (en) * | 1996-09-13 | 1998-03-18 | Alcatel | Method for fabricating an optoelectrical semiconductor device and a device or matrix of devices fabricated using said method |
| FR2753576A1 (en) * | 1996-09-13 | 1998-03-20 | Alsthom Cge Alcatel | METHOD FOR MANUFACTURING A SURFACE EMITTING SEMICONDUCTOR LASER |
| FR2753577A1 (en) * | 1996-09-13 | 1998-03-20 | Alsthom Cge Alcatel | METHOD FOR MANUFACTURING A SEMICONDUCTOR OPTOELECTRONIC COMPONENT AND COMPONENT AND MATRIX OF COMPONENTS MANUFACTURED ACCORDING TO THIS METHOD |
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