JPH0113066B2 - - Google Patents
Info
- Publication number
- JPH0113066B2 JPH0113066B2 JP8763180A JP8763180A JPH0113066B2 JP H0113066 B2 JPH0113066 B2 JP H0113066B2 JP 8763180 A JP8763180 A JP 8763180A JP 8763180 A JP8763180 A JP 8763180A JP H0113066 B2 JPH0113066 B2 JP H0113066B2
- Authority
- JP
- Japan
- Prior art keywords
- electric field
- piezoelectric
- surface acoustic
- voltage
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010897 surface acoustic wave method Methods 0.000 claims description 43
- 230000005684 electric field Effects 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 7
- 230000010287 polarization Effects 0.000 claims description 3
- 230000010355 oscillation Effects 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910052573 porcelain Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 229910001586 aluminite Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- DQUIAMCJEJUUJC-UHFFFAOYSA-N dibismuth;dioxido(oxo)silane Chemical compound [Bi+3].[Bi+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O.[O-][Si]([O-])=O DQUIAMCJEJUUJC-UHFFFAOYSA-N 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- VVNXEADCOVSAER-UHFFFAOYSA-N lithium sodium Chemical compound [Li].[Na] VVNXEADCOVSAER-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0084—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring voltage only
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measurement Of Current Or Voltage (AREA)
Description
【発明の詳細な説明】
本発明は電圧測定装置に関し、測定電圧領域が
広く、小型で精度の高い電圧測定装置を提供しよ
うとするものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a voltage measuring device, and an object of the present invention is to provide a voltage measuring device that has a wide measuring voltage range, is compact, and has high accuracy.
電圧計に要求される条件としては、入力インピ
ーダンスが高いこと、温度安定性がよいこと、耐
雑音性に優れ、安定していること、耐電圧性がよ
いこと、読取り精度が高いことなどをあげること
ができる。 The requirements for a voltmeter include high input impedance, good temperature stability, excellent noise resistance and stability, good voltage resistance, and high reading accuracy. be able to.
従来、入力インピーダンスの高い電圧計とし
て、真空管電圧計が広く使用されていた。これ
は、真空管を利用しているために、特性がかなり
不安定であり、また、熱雑音が大きいだけでな
く、小型化の困難なものであつた。そのため、近
年になつて、電界効果型トランジスタ（FET）
を用いた電圧計に次第にとつてかわられている。
FETを用いた電圧計は、真空管電圧計と同等の
入力インピーダンスをもち、熱雑音が少なく、小
型化できるという利点をもつている。しかし、
FETの耐電圧性がよくなく、そのためこの電圧
計は通常数10V程度の電圧にしか耐えられず、過
大電圧にきわめて弱いものであつた。 Conventionally, vacuum tube voltmeters have been widely used as voltmeters with high input impedance. Because it uses vacuum tubes, its characteristics are quite unstable, and it not only produces large thermal noise, but is also difficult to miniaturize. Therefore, in recent years, field-effect transistors (FETs)
It is gradually being replaced by a voltmeter using a voltmeter.
Voltmeters using FETs have the same input impedance as vacuum tube voltmeters, have low thermal noise, and have the advantage of being compact. but,
The voltage resistance of the FET was poor, and as a result, this voltmeter could only withstand voltages of several tens of volts, making it extremely vulnerable to excessive voltages.
一方、現在の電子機器において、数百Ｖから数
千Ｖ程度の電圧が使用されることは、それほど珍
しいことではない。このような電子機器の回路電
圧の測定には、FETを用いた電圧計は不適当で
あつた。 On the other hand, it is not uncommon for current electronic devices to use voltages from several hundred volts to several thousand volts. Voltmeters using FETs were inappropriate for measuring circuit voltages of such electronic devices.
本発明は、圧電体に電界を印加すると、その弾
性的な特性が変化することを利用した電圧計を用
いたものであつて、これにより従来の上記電圧計
にあつた問題点を解決したものである。 The present invention uses a voltmeter that takes advantage of the fact that when an electric field is applied to a piezoelectric material, its elastic properties change, thereby solving the problems encountered with the conventional voltmeters. It is.
圧電体に電界を印加すると、この圧電体に歪が
発生し、その弾性的な特性が変化する。かかる特
性の変化は、たとえば圧電体の共振周波数の変化
として観測される。以下に示す実施例では、特に
圧電体に伝搬する弾性表面波の共振特性を利用し
ている。すなわち、弾性表面波の伝搬速度、伝搬
損失、伝搬長が、圧電体に印加される電界に応じ
て変化する。それにより、弾性表面波発振器の発
振周波数が変化する。弾性表面波発振器の構造や
寸法、それを構成する圧電体の材質等が決まれ
ば、その発振周波数の変化から印加電圧を知るこ
とができる。 When an electric field is applied to a piezoelectric material, strain occurs in the piezoelectric material, and its elastic properties change. Such a change in characteristics is observed, for example, as a change in the resonant frequency of the piezoelectric material. In the embodiments shown below, the resonance characteristics of surface acoustic waves propagating in a piezoelectric body are particularly utilized. That is, the propagation speed, propagation loss, and propagation length of the surface acoustic wave change depending on the electric field applied to the piezoelectric body. As a result, the oscillation frequency of the surface acoustic wave oscillator changes. Once the structure and dimensions of the surface acoustic wave oscillator and the material of the piezoelectric body constituting it are determined, the applied voltage can be determined from changes in the oscillation frequency.
第１図に、本発明にかかる電圧測定装置に用い
る電圧計の構成の一例を示す。図において、１は
板状の弾性表面波伝搬媒体で、圧電体材料で構成
されている。２，３は交差指形電極で、公知の弾
性表面波を利用する装置と同様に弾性表面波伝搬
媒体１の一方の主面上に形成されている。４は増
幅器で、その入力端は一方の電極３に、またその
出力端は他方の電極２にそれぞれ接続されてい
る。５はコンデンサで、電極２と増幅器４の出力
端との接続点と出力端子６との間に挿入されてい
る。７は外部電界印加電極で、弾性表面波伝搬媒
体１の一方の主面上で電極２，３間に位置するよ
う形成されている。８は対向電極で、弾性表面波
伝搬媒体１の他方の主面上に、電極７と対向する
よう設けられている。電極２，３，７，８はアル
ミニウムや金などの金属材料をスパツタ法や蒸着
法などの公知の方法で形成することができる。９
は測定すべき外部電界電圧を印加するための入力
端子である。 FIG. 1 shows an example of the configuration of a voltmeter used in a voltage measuring device according to the present invention. In the figure, reference numeral 1 denotes a plate-shaped surface acoustic wave propagation medium, which is made of a piezoelectric material. Reference numerals 2 and 3 indicate interdigital electrodes, which are formed on one main surface of the surface acoustic wave propagation medium 1, similar to known devices that utilize surface acoustic waves. 4 is an amplifier, the input end of which is connected to one electrode 3, and the output end thereof to the other electrode 2. A capacitor 5 is inserted between the connection point between the electrode 2 and the output end of the amplifier 4 and the output terminal 6. Reference numeral 7 denotes an external electric field applying electrode, which is formed to be located between the electrodes 2 and 3 on one main surface of the surface acoustic wave propagation medium 1. A counter electrode 8 is provided on the other main surface of the surface acoustic wave propagation medium 1 so as to face the electrode 7 . The electrodes 2, 3, 7, and 8 can be formed from a metal material such as aluminum or gold by a known method such as a sputtering method or a vapor deposition method. 9
is an input terminal for applying the external electric field voltage to be measured.
このような構成において、電極２により弾性表
面波伝搬媒体１に表面弾性波を発生させる。弾性
表面波伝搬媒体１の表面を伝搬して来た表面波は
電極３の部分で交番電圧に変換される。この電圧
は増幅器４によつて増幅されて電極２に印加さ
れ、電極２より弾性表面波として再放射される。 In such a configuration, the electrode 2 causes the surface acoustic wave propagation medium 1 to generate a surface acoustic wave. A surface wave propagating on the surface of the surface acoustic wave propagation medium 1 is converted into an alternating voltage at the electrode 3. This voltage is amplified by the amplifier 4 and applied to the electrode 2, and is re-radiated from the electrode 2 as a surface acoustic wave.
上述のようにして一巡したときの位相条件が合
致した周波数成分のみが選択的に増大し、一定の
電圧値で飽和して、発振状態となる。すなわち増
幅器４により帰還型発振器が構成される。出力周
波数は端子６より得られる。 As described above, only the frequency components that meet the phase conditions after one round are selectively increased, saturated at a constant voltage value, and enter an oscillation state. That is, the amplifier 4 constitutes a feedback oscillator. The output frequency is obtained from terminal 6.
入力端子９に測定すべき電圧を印加すると、圧
電体材料から成る弾性表面波伝搬媒体１の電極
７，８間にそれに応じた電界が印加されることに
なる。したがつて電極７，８間の電界に応じて弾
性表面波伝搬媒体１は歪を生じ、電極２，３間に
生じた弾性表面波航路長が変化する。入力端子９
に対する印加電圧が変化すると、弾性表面波伝搬
媒体１の電極７，８間の部分に加えられる電界も
変化する。この電界に応じて弾性表面波航路長が
変化するため、前記位相条件が変化し、出力端子
６に得られる出力周波数は前記電界に応じて変化
する。したがつて、前記出力周波数が前記入力端
子９に印加される電圧に応じて変化する。 When a voltage to be measured is applied to the input terminal 9, a corresponding electric field is applied between the electrodes 7 and 8 of the surface acoustic wave propagation medium 1 made of piezoelectric material. Therefore, the surface acoustic wave propagation medium 1 is distorted depending on the electric field between the electrodes 7 and 8, and the surface acoustic wave path length generated between the electrodes 2 and 3 changes. Input terminal 9
When the voltage applied to the surface acoustic wave propagation medium 1 changes, the electric field applied to the portion between the electrodes 7 and 8 of the surface acoustic wave propagation medium 1 also changes. Since the surface acoustic wave path length changes in accordance with this electric field, the phase condition changes, and the output frequency obtained at the output terminal 6 changes in accordance with the electric field. Therefore, the output frequency changes depending on the voltage applied to the input terminal 9.
圧電体である弾性表面波伝搬媒体１に電界が印
加されると、圧電体結晶に歪が生じ、電極２，３
間の弾性表面波の実効伝搬路長が変化する。そし
て、弾性表面波伝搬媒体１上における電界の有無
で、弾性表面波の伝搬速度が異なつて来る。これ
らの要因によつて、入力端子９への入力電圧に対
応する周波数の出力が端子６に得られる。 When an electric field is applied to the surface acoustic wave propagation medium 1, which is a piezoelectric material, distortion occurs in the piezoelectric crystal, and the electrodes 2, 3
The effective propagation path length of the surface acoustic waves between the two changes. The propagation speed of the surface acoustic wave varies depending on the presence or absence of an electric field on the surface acoustic wave propagation medium 1. These factors result in an output at terminal 6 at a frequency corresponding to the input voltage at input terminal 9.
第２図に入力電圧と出力周波数の変化分との関
係の一例を示す。弾性表面波伝搬媒体１として
は、マグネシウムニオブ酸チタン酸ジルコン酸鉛
系磁器からなる厚さ0.7mm、長さ10mmの圧電体基
板を使用した。そして、弾性表面波の波長が
300μｍとなるよう交差指形電極２，３を構成し
た。基本発振周波数は、室温（25℃）で
7.21948MHzとした。外部電界印加電極７に対す
る入力電圧を変化させると、発振周波数の変化分
は図のとおりに変化した。これから、発振周波数
の変化分で、電圧を精度よく測定できることがわ
かる。 FIG. 2 shows an example of the relationship between the input voltage and the change in output frequency. As the surface acoustic wave propagation medium 1, a piezoelectric substrate with a thickness of 0.7 mm and a length of 10 mm made of magnesium niobate titanate lead zirconate ceramic was used. And the wavelength of the surface acoustic wave is
The interdigital electrodes 2 and 3 were configured to have a thickness of 300 μm. The fundamental oscillation frequency is at room temperature (25℃)
It was set to 7.21948MHz. When the input voltage to the external electric field applying electrode 7 was changed, the amount of change in the oscillation frequency changed as shown in the figure. From this, it can be seen that the voltage can be measured accurately based on the change in the oscillation frequency.
第３図Ａ，Ｂにそれぞれ上記電圧計の変形例を
示す。第３図Ａは、外部電界印加電極７を弾性表
面波伝搬媒体１の表面と一定の間隔を置いて平行
に配置した構造を示している。この場合、電極７
をステンレス鋼板などの板材で構成する。同図Ｂ
は弾性表面波伝搬媒体１を薄膜とし、それを他の
非圧電材料からなる支持基板１０で支持した構造
を示している。このような構造の素子を用いて
も、第１図に示した例と同様に、端子９に対する
入力電圧に応じた出力周波数が得られる。無論、
第３図Ｂの構造の素子において、外部電界印加電
極７を薄膜状の弾性表面波伝搬媒体１の表面と一
定の間隔をもたせて配置してもよい。 FIGS. 3A and 3B show modified examples of the above-mentioned voltmeter, respectively. FIG. 3A shows a structure in which the external electric field applying electrode 7 is arranged parallel to the surface of the surface acoustic wave propagation medium 1 at a constant distance. In this case, electrode 7
is made of plate material such as stainless steel plate. Figure B
1 shows a structure in which the surface acoustic wave propagation medium 1 is a thin film and is supported by a support substrate 10 made of another non-piezoelectric material. Even if an element having such a structure is used, an output frequency corresponding to the input voltage to the terminal 9 can be obtained as in the example shown in FIG. Of course,
In the element having the structure shown in FIG. 3B, the external electric field applying electrode 7 may be arranged at a constant distance from the surface of the thin film surface acoustic wave propagation medium 1.
弾性表面波伝搬媒体１を構成するための代表的
な材料として、チタン酸ジルコン酸鉛系圧電磁
器、ニオブ酸マグネシウム−チタン酸鉛−ジルコ
ン酸鉛系圧電磁器、チタン酸鉛系圧電磁器、ジル
コン酸鉛系圧電磁器、チタン酸バリウム系磁器、
ナトリウムリチウムニオベイト系磁器などの磁
器、あるいはビスマスジヤーマネイト、ビスマス
シリケイト、鉛−タイタネイト−ジルコネイト、
リシウムニオベイト、リシウムタンタレイト、水
晶、ロツシエル塩、酸化亜鉛、硫化亜鉛、硫化カ
ドミウム、アルミナイトライトなどの圧電単結晶
をあげることができる。 Typical materials for constructing the surface acoustic wave propagation medium 1 include lead zirconate titanate piezoelectric ceramics, magnesium niobate-lead titanate-lead zirconate piezoelectric ceramics, lead titanate piezoelectric ceramics, and zirconate piezoelectric ceramics. Lead-based piezoelectric ceramics, barium titanate-based porcelain,
Porcelain such as sodium lithium niobate porcelain, or bismuth diamanate, bismuth silicate, lead titanate zirconate,
Examples include piezoelectric single crystals such as lithium niobate, lithium tantalate, quartz, Rothsiel salt, zinc oxide, zinc sulfide, cadmium sulfide, and aluminite.
また、弾性表面波伝搬体１として圧電薄膜を使
用する場合、その支持基板１０を構成するための
代表的な材料としては、石英ガラス、硼珪酸ガラ
ス、鉛ガラスなどの非圧電物質をあげることがで
きる。 Further, when a piezoelectric thin film is used as the surface acoustic wave propagator 1, typical materials for forming the support substrate 10 include non-piezoelectric materials such as quartz glass, borosilicate glass, and lead glass. can.
非電圧物質からなる支持基板１０上に、圧電薄
膜からなる弾性表面波伝搬媒体１を積層した構造
の素子は、周囲温度の変化に対しても安定に動作
させることができるものである。すなわち、圧電
薄膜からなる弾性表面波伝搬媒体１を非圧電物質
からなる支持基板１０上に、互いに弾性温度定数
の温度変化が反対の材料の組合わせを選んで積層
することによつて、両者の温度変化を相殺させ
て、温度特性の安定な素子を実現することができ
る。一例をあげると、石英ガラス基板上に、厚さ
が弾性表面波の波長の40〜50％である酸化亜鉛薄
膜をスパツタ蒸着法で形成した素子では、発振周
波数の温度変化が10ppm／℃以下である。なお、
検出最低電圧は10Vであり、電圧の検出誤差
1000Vで１％以下であつた。 An element having a structure in which a surface acoustic wave propagation medium 1 made of a piezoelectric thin film is laminated on a support substrate 10 made of a non-voltage material can operate stably even under changes in ambient temperature. That is, by laminating the surface acoustic wave propagation medium 1 made of a piezoelectric thin film on the supporting substrate 10 made of a non-piezoelectric material by selecting a combination of materials whose elastic temperature constants have opposite temperature changes, By offsetting temperature changes, it is possible to realize an element with stable temperature characteristics. For example, in a device in which a zinc oxide thin film with a thickness of 40 to 50% of the surface acoustic wave wavelength is formed by sputter deposition on a quartz glass substrate, the temperature change in the oscillation frequency is less than 10 ppm/℃. be. In addition,
The minimum detection voltage is 10V, and the voltage detection error
It was less than 1% at 1000V.
上述の例では、弾性表面波伝搬媒体表面の送波
用の電極と受波用の電極との間の部分に、測定す
べき電圧に対応した電界を印加する構造について
述べたが、交差指形電極部分に電界を印加して歪
を発生させ、それによる共振周波数の変化を利用
しても同様の効果が得られる。 In the above example, we described a structure in which an electric field corresponding to the voltage to be measured is applied to the part between the transmitting electrode and the receiving electrode on the surface of the surface acoustic wave propagation medium. A similar effect can be obtained by applying an electric field to the electrode portion to generate distortion and utilizing the resulting change in the resonant frequency.
第４図は本発明にかかる電圧測定装置の一実施
例を示しており、周囲温度の変化に対する装置の
動作の安定性をより改善することができるもので
ある。 FIG. 4 shows an embodiment of the voltage measuring device according to the present invention, which can further improve the stability of the device's operation against changes in ambient temperature.
これは、第１図に示した構成の電圧計に補償用
の装置を付加したものである。この補償用装置
は、弾性表面波伝搬媒体１′、その一方の表面に
設けられている二組の交差指形電極２′，３′、こ
れら電極２′，３′間に挿入されている増幅器４′、
この増幅器４′の出力端ならびに交差指形電極
３′の一方に接続されているコンデンサ５′で構成
されている。１１は減算回路で、コンデンサ５を
通して得られる出力周波数f1と、コンデンサ５′
を通して得られる出力周波数f2との差をとるため
のミキサー（減算回路）である。１２は出力端子
である。 This is a voltmeter having the configuration shown in FIG. 1 with a compensation device added. This compensation device consists of a surface acoustic wave propagation medium 1', two sets of interdigital electrodes 2' and 3' provided on one surface of the medium, and an amplifier inserted between these electrodes 2' and 3'. 4′,
It consists of a capacitor 5' connected to the output end of this amplifier 4' and to one of the interdigital electrodes 3'. 11 is a subtraction circuit, which outputs the output frequency f 1 obtained through capacitor 5 and capacitor 5'
This is a mixer (subtraction circuit) for taking the difference between the output frequency f2 obtained through 12 is an output terminal.
補償用装置を構成する弾性表面伝搬媒体１′、
交差指形電極２′，３′、増幅器４′は、それぞれ
弾性表面波伝搬媒体１、交差指形電極２，３、増
幅器４と同じ構成とする。そして、弾性表面波伝
搬媒体１′には、電極７，８に相当する電極７′，
８′を設け、電極７′は電極８と同様に接地し、電
極８′は電極７と同様に外部電界が弾性表面波伝
搬媒体１′に印加されるように入力端子９′を設け
る。 an elastic surface propagation medium 1' constituting a compensation device;
The interdigital electrodes 2', 3' and the amplifier 4' have the same configuration as the surface acoustic wave propagation medium 1, the interdigital electrodes 2, 3, and the amplifier 4, respectively. The surface acoustic wave propagation medium 1' includes electrodes 7', which correspond to the electrodes 7 and 8;
8' is provided, the electrode 7' is grounded like the electrode 8, and the electrode 8' is provided with an input terminal 9' like the electrode 7 so that an external electric field is applied to the surface acoustic wave propagation medium 1'.
上記構成の電圧測定装置によれば、弾性表面波
伝搬媒体１および１′は、電極７，８，７′，８′
により互いに逆方向に外部電界が印加され、出力
端子１２には、補償用装置を設けない場合と比較
して、２倍の周波数変化量が得られる。また周波
数の温度安定性が、第１図、第３図に示した構造
のものに比べて２桁ないし１桁向上し、実験によ
れば−20℃から＋80℃の温度範囲で1ppm以下で
あつた。さらに、これらを恒温槽に入れると、そ
れが0.01ppmまで改善される。 According to the voltage measuring device having the above configuration, the surface acoustic wave propagation media 1 and 1' are the electrodes 7, 8, 7', 8'.
As a result, external electric fields are applied in mutually opposite directions, and a frequency change twice as large as that in the case where no compensation device is provided is obtained at the output terminal 12. In addition, the temperature stability of the frequency is improved by two to one orders of magnitude compared to the structures shown in Figures 1 and 3, and according to experiments, it is less than 1 ppm in the temperature range from -20℃ to +80℃. Ta. Furthermore, when these are placed in a constant temperature bath, this can be improved to 0.01ppm.
なお上記実施例においては、弾性表面波伝搬媒
体１，１′として、同方向の外部電界に対して互
いに同方向の歪を発生する（すなわち互いに同方
向に分極軸を有する）ものを用いた例について説
明したが、これの代わりに、同方向の外部電界に
対して互いに逆方向の歪を発生する（すなわち互
いに逆方向に分極軸を有する）ものを用いてもよ
い。この場合、電極７′に入力端子９′を接続し、
電極８′を接地電極とする。 In the above embodiment, the surface acoustic wave propagation media 1 and 1' are those that generate strain in the same direction in response to an external electric field in the same direction (that is, have polarization axes in the same direction). However, instead of this, one that generates strain in mutually opposite directions in response to an external electric field in the same direction (that is, has polarization axes in mutually opposite directions) may be used. In this case, connect the input terminal 9' to the electrode 7',
Electrode 8' is used as a ground electrode.
また上記実施例においては、弾性表面波を用い
た例について説明したが、これの代わりにバルク
波を用いてもよい。 Further, in the above embodiment, an example using surface acoustic waves has been described, but bulk waves may be used instead.
以上説明したように、本発明にかかる電圧測定
装置によれば、測定すべき電圧に対応する電界を
圧電体に印加し、その周波数変化で電圧を測定す
るよう構成されているので、その測定電圧の入力
インピーダンスが非常に高く、現用の真空管電圧
計等と同等以上の入力インピーダンスを示す。そ
して、測定可能な電圧の上限値は、圧電体の絶縁
耐圧によつて決まるので、103Vオーダー以上で
ある。また、電圧を周波数に変換して読取る構成
であるため、雑音に対しても安定で、読取り誤差
がない。また、出力信号のデイジタル信号化がき
わめて容易であるので、単に電圧を測定し、その
値を読取るための電圧計としてだけでなく、電圧
を検出し、制御するための用途、たとえば電子複
写機のトナーの帯電度合の検出にも使用すること
ができる。また、測定すべき電圧に対応する電界
を１対の圧電体に印加し、その周波数の差で電圧
を測定するよう構成されているので、温度安定性
が極めて優れている。 As explained above, the voltage measuring device according to the present invention is configured to apply an electric field corresponding to the voltage to be measured to the piezoelectric body and measure the voltage based on the frequency change, so that the measured voltage The input impedance is very high, and the input impedance is equal to or higher than that of current vacuum tube voltmeters. The upper limit of the measurable voltage is determined by the dielectric strength of the piezoelectric material, and is therefore on the order of 10 3 V or more. In addition, since it is configured to convert voltage into frequency and read it, it is stable against noise and has no reading errors. In addition, since it is extremely easy to convert the output signal into a digital signal, it can be used not only as a voltmeter to simply measure voltage and read its value, but also for applications such as detecting and controlling voltage, such as in electronic copying machines. It can also be used to detect the degree of charge of toner. Further, since it is configured to apply an electric field corresponding to the voltage to be measured to a pair of piezoelectric bodies and measure the voltage based on the difference in frequency, the temperature stability is extremely excellent.
第１図は本発明にかかる電圧測定装置に用いる
電圧計の一例を示す全体構成図、第２図はその特
性の説明図、第３図Ａ，Ｂはそれぞれ電圧計の変
形例を示す要部の構成図、第４図は本発明にかか
る電圧測定装置の一実施例を示す全体構成図であ
る。
１，１′……弾性表面波伝搬媒体（圧電体）、
２，２′，３，３′……交差指形電極（送受波用電
極）、４，４′……増幅器、７，８′……外部電界
印加電極。
FIG. 1 is an overall configuration diagram showing an example of a voltmeter used in the voltage measuring device according to the present invention, FIG. 2 is an explanatory diagram of its characteristics, and FIGS. 3A and B are main parts showing modified examples of the voltmeter, respectively. FIG. 4 is an overall configuration diagram showing an embodiment of the voltage measuring device according to the present invention. 1,1'...Surface acoustic wave propagation medium (piezoelectric material),
2, 2', 3, 3'... interdigital electrodes (wave transmission/reception electrodes), 4, 4'... amplifier, 7, 8'... external electric field application electrodes.
Claims (1)
け、該各圧電体上に音波の送受のための送受波用
電極を取付け、該送受波用電極に入出力端が接続
されて帰還型発振器を構成する増幅器と、前記１
対の圧電体に互いに逆方向に歪が生じるように外
部電界を導く外部電界印加電極とを前記各圧電体
に対してそれぞれ設け、前記各圧電体に対してそ
れぞれ設けられた増幅器の出力周波数の差から前
記外部電界印加電極により印加された電界の強さ
を検出するように構成したことを特徴とする電圧
測定装置。 ２ 送受波用電極は、交差指形電極から成り、弾
性表面波を送受するように構成されていることを
特徴とする特許請求の範囲第１項記載の電圧測定
装置。 ３ 圧電体は、外部電界印加電極により印加され
る電界の方向と同一方向もしくはそれとは逆方向
に分極軸を有することを特徴とする特許請求の範
囲第１項記載の電圧測定装置。 ４ 圧電体は、非圧電物質の支持基板上に形成さ
れた圧電薄膜であることを特徴とする特許請求の
範囲第２項記載の電圧測定装置。 ５ 圧電体に対して、その表面上に形成された外
部電界印加電極もしくはその表面と平行に配置さ
れた外部電界印加電極に測定すべき電圧を加え、
電界を印加することを特徴とする特許請求の範囲
第１項記載の電圧測定装置。[Claims] 1. A pair of piezoelectric bodies are provided as a propagation medium for sound waves, and a wave transmitting/receiving electrode for transmitting and receiving sound waves is attached on each piezoelectric body, and input and output ends of the wave transmitting/receiving electrodes are provided. an amplifier connected to constitute a feedback oscillator;
An external electric field applying electrode is provided for each of the piezoelectric bodies to guide an external electric field so that strain is generated in opposite directions in the pair of piezoelectric bodies, and the output frequency of the amplifier provided for each of the piezoelectric bodies is A voltage measuring device characterized in that it is configured to detect the strength of the electric field applied by the external electric field applying electrode from the difference. 2. The voltage measuring device according to claim 1, wherein the wave transmitting/receiving electrode is composed of interdigital electrodes and is configured to transmit and receive surface acoustic waves. 3. The voltage measuring device according to claim 1, wherein the piezoelectric body has a polarization axis in the same direction as or in the opposite direction to the direction of the electric field applied by the external electric field applying electrode. 4. The voltage measuring device according to claim 2, wherein the piezoelectric body is a piezoelectric thin film formed on a support substrate made of a non-piezoelectric material. 5 Applying the voltage to be measured to the piezoelectric body to an external electric field applying electrode formed on the surface thereof or an external electric field applying electrode arranged parallel to the surface,
2. The voltage measuring device according to claim 1, wherein an electric field is applied.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8763180A JPS5712368A (en) | 1980-06-26 | 1980-06-26 | Voltage measuring device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8763180A JPS5712368A (en) | 1980-06-26 | 1980-06-26 | Voltage measuring device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5712368A JPS5712368A (en) | 1982-01-22 |
| JPH0113066B2 true JPH0113066B2 (en) | 1989-03-03 |
Family
ID=13920316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8763180A Granted JPS5712368A (en) | 1980-06-26 | 1980-06-26 | Voltage measuring device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5712368A (en) |
-
1980
- 1980-06-26 JP JP8763180A patent/JPS5712368A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5712368A (en) | 1982-01-22 |
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