JPH0955402A - Carrier tape for semiconductor element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the mechanical destruction and the electrostatic breakdown of a semiconductor element when it is transported, supplied and mounted by a method wherein the metal lead part of the semiconductor element is prevented from coming into contact with the bottom face and the side wall of a pocket part, and the surface resistivity of the sealant layer of a cover tape is set at the prescribed value. SOLUTION: A pedestal 3 and a movement control protruding part 4, which rises from the bottom part 33 located between the pedestal 3 and the side wall 37 of a pocket 1, are provided on the pocket 1 of a carrier tape consisting of a plastic band- like molded article 10 on which a feeding hole 21, a band-like board 2, where an aperture part 22 for a pocket is provided, and a pocket 1 formed by injection molding. The lead part 61 of a semiconductor element 61 is placed on the pedestal 3 in such a manner that it does not come in contact with the bottom part 33 and the side wall 37 of the recessed part 12 of the pocket, and the lead part 61 is loosely fixed to the prescribed position using a movement control protruding part 4, and it is hermetically sealed by a cover tape 7. The surface resistivity of the pocket and the surface of a cover tape sealant layer is made smaller than 12Ω/(square) under the environment of 23 deg.C 90% RH.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor element carrier tape for housing and supplying semiconductor elements to be mounted on home electric appliances and electronic devices, and mechanical damage and static electricity damage of the semiconductor elements during transportation, supply and mounting. Belonging to the carrier tape to prevent.

[0002]

SUMMARY OF THE INVENTION The present invention accommodates a semiconductor element composed of a metal lead portion and a plastic molded product,
In the carrier tape to be transported, the pedestal on which the semiconductor element is placed or the peripheral part of the upper part of the pedestal has good processing dimensional accuracy, has a desired thickness in that part, has shape retention, and stabilizes the semiconductor element against impact. In addition, the pedestal holes and feed holes can be molded with a stable size and pitch to have a sufficient antistatic function, and the pockets and feed holes can be positioned with good accuracy, and the cover tape can be heat-sealed. A semiconductor element filled in a carrier tape that can be heat-sealed under stable conditions without unevenness on the surface of the plastic sheet such as a part to be wound, can be wound up with stable sealing strength, and has no peeling charge even when the cover tape is peeled off. It is an object of the present invention to provide a carrier tape for a semiconductor device, which can be stably mounted.

[0003]

In order to achieve the above object, in a carrier tape for a semiconductor device of the present invention, a component pocket for accommodating a semiconductor device comprising a metal lead portion and a plastic molding portion, In a carrier tape for a semiconductor device, which comprises a plastic tape-shaped molded product having at least one transporting hole provided at equal intervals on one side and a heat-sealant layer for heat-sealing the pocket, the semiconductor of the component pocket portion The surface resistivity or volume resistivity near the contact with the element is 2
Under conditions of 3 ° C. and relative humidity of 90%, the pedestal and the pedestal supporting the semiconductor element are not larger than 10 ¹² Ω / □ and the metal lead portion of the semiconductor element does not come into contact with the bottom surface and side wall of the pocket portion in the pocket. A movement control convex portion for limiting movement of the semiconductor element is formed between the side wall of the pocket portion and the metal lead portion, and the surface resistivity of the sealant layer surface of the cover tape is 23 ° C. 90% RH. It is a carrier tape for semiconductor devices which is not larger than 10 ¹² Ω / □ under the environment. Further, the movement control convex portion is a carrier tape for a semiconductor element, which is provided in a rod shape or a plate shape. Further, the semiconductor carrier tape is provided with a concave air reservoir near the center of the pedestal so as to reduce the contact area with the semiconductor element portion. And
The base material of the plastic strip-shaped product has a thickness of 0.1 to 0.8.
A carrier tape for a semiconductor device, which is a plastic sheet of mm and has a component pocket formed by injection molding in a component pocket opening formed in the same step as a transport feed hole provided in the base material. In addition, the thickness of the opening for the pocket for the component and the feed hole for the transport provided at equal intervals are 0.1 to 0.1 mm.
A carrier tape having a pocket for a component formed by an injection molding method in a pocket opening of a strip-shaped base material of 0.8 mm. The base material of the plastic strip-shaped molded article is a conductive fine powder or conductive carbon having a particle diameter of 0.01 to 1 μm obtained by subjecting a thermoplastic resin and tin oxide, indium oxide, or zinc oxide to a conductive treatment, and a surfactant. The conductive fine powder, conductive carbon, and surfactant are
It is a carrier tape for a semiconductor device containing 1 to 300% by weight based on 0 part. In addition, the base material of the plastic strip-shaped molded article is a resin varnish containing conductive fine powder having a particle diameter of 0.01 to 1 μm obtained by subjecting tin oxide, indium oxide, and zinc oxide to a conductive treatment, or conductive carbon and a surfactant. It is a carrier tape for a semiconductor device, which is provided by coating a dispersion-adjusted conductive coating agent on at least one side. A carrier tape for a semiconductor device, wherein the base material of the plastic strip-shaped product is a laminate of two or more layers, and at least the volume resistivity of the inner surface layer in contact with the semiconductor device does not exceed 10 ¹² Ω · cm. is there. Further, the above-mentioned component pocket is made of conductive fine powder or conductive carbon having a particle diameter of 0.01 to 1 μm obtained by subjecting a thermoplastic resin and a metal oxide such as tin oxide, indium oxide, and zinc oxide to a conductive treatment, and a surface active agent. An injection-molded product comprising a conductive fine powder, conductive carbon, and a surfactant in an amount of 1 to 300% by weight based on 100 parts of the thermoplastic resin, and the surface resistivity of the pocket does not exceed 10 ¹² Ω / □. It is a certain carrier tape for semiconductor devices. Then, at least one surface of the component pocket has a grain size of 0. 1 obtained by subjecting a metal oxide of tin oxide, indium oxide, or zinc oxide to a conductive treatment.
It is a carrier tape for a semiconductor device in which a conductive coating agent in which a conductive fine powder or conductive carbon having a size of 0 to 1 μm and a surfactant is dispersed and adjusted in a resin varnish is provided on at least one side.

[0004]

2. Description of the Related Art Conventional carrier tapes for semiconductor devices are
A plastic sheet is thermoformed (pressure molding, vacuum molding or pressure molding) with a component storage pocket, a pedestal, convex parts around the pedestal and feed holes for transportation, and is used in a long winding state. ing.

In the case of a carrier tape for IC or LSI, static electricity generated by friction or contact between the semiconductor element and the carrier tape during transfer causes a short circuit in the circuit, or contact with the pocket side wall to cause metal lead parts to machine. In order to prevent mechanical damage, a pedestal or a rib-like member is provided to fix the semiconductor element in order to prevent contact between the pocket and the bottom of the semiconductor element.

The carrier tape is molded by a thermoforming method, that is, after heating the sheet, the component pocket is formed in the mold by a pressure forming method, a vacuum forming method or a pressure forming method. Further, the pedestal hole and the feed hole are formed by any method such as before heating the sheet, simultaneously processing with a component pocket (hereinafter simply referred to as a pocket) in the mold, and after pocket processing. . Alternatively, manufacturing of a carrier tape having a pedestal by an injection molding method has been considered.

However, since the carrier tape formed by thermoforming a sheet has a large stretching rate, it has a limit in the shapeability of the sheet, and holes are formed in the side wall of the pocket, the pedestal or the upper peripheral portion of the pedestal, or the pocket of the pocket is formed. The dimensional accuracy of the pedestal or the upper peripheral portion of the pedestal may be poor, or the thickness of that portion may be thin. Therefore, there is a problem that the shape retaining property is poor and the component is likely to be deformed or damaged by an impact, and it is difficult to hold the component at a predetermined position.

After the pedestal holes and the feed holes are provided in the sheet, the pockets are thermoformed. The sheet is shrunk by heating, the hole diameter varies due to expansion, the pitch variation between the holes, and the feed hole and pocket dimensions. When the semiconductor element is mounted on the electronic component with such a carrier tape, the change is likely to occur, and there is a problem that the feeding position accuracy and timing are deviated and stable conveyance cannot be performed.

In the processing of the heating sheet in the mold, when the molded product is small, the distance between the pocket and the hole becomes short, and when the mold is manufactured by the machining method, the mold has high precision and high hardness. There is a problem that the material cost is required and the die cost is increased.

When forming holes after forming the pockets, it is difficult to determine the positions of the feed holes and the pockets, the positions of the holes are likely to change, and the positional accuracy is unstable. However, when the component is mounted, there is a problem in that the position accuracy timing of the feed is shifted and stable conveyance cannot be performed, so that the semiconductor element is mounted in the displaced position when the substrate is mounted.

In the heat molding in which the heating sheet is fed into the mold and molded, the mold clamping traces may form an uneven pattern on the surface of the carrier tape between cycles. When the cover tape is heat-sealed in this uneven pattern, the sealing strength is different due to the difference in heat-sealing pressure, resulting in uneven peeling strength. there were.

The semiconductor element has a structure in which an electric circuit is embedded in resin, and when the semiconductor element and the carrier tape plastic contact and rub against each other, static electricity is generated, and the static electricity short-circuits and damages the electric circuit. However, there is a problem that the electric circuit is short-circuited and damaged due to static electricity (peeling electrification) generated when the cover tape is peeled off.

In the production of a carrier tape by the injection molding method, it is difficult to mold a carrier tape having a thickness of 0.1 mm or less due to the characteristics of the injection molding resin and the structure of the mold. Also, from the characteristics of the resin for injection molding, a plastic band-shaped molded article manufactured by the injection molding method is filled with semiconductor elements, and heat sealed with a cover tape, the flexibility between the pockets is poor,
In the case of the rolled-up shape, there is a problem that it cannot be rolled up so that it can be used for mounting because it is easily broken.

[0014]

BEST MODE FOR CARRYING OUT THE INVENTION A carrier tape for a semiconductor device according to the present invention comprises a belt-shaped substrate 2 having a feed hole 21 and a pocket opening 22 shown in FIG. 1B, and a pocket 1 formed by injection molding. The carrier tape shown in FIG. 1 (C), which is made of a plastic strip-shaped molded product 10 in which are bonded together by an adhesive portion 16. As shown in the cross-sectional view of FIG. 1A, the pocket is provided with a pedestal 3 and a movement control convex portion 4 that rises from the bottom 33 between the pedestal 3 and the side wall 37 of the pocket 1. . The metal lead portion 61 of the semiconductor element 6 is placed on the pedestal 3 so as not to come into contact with the bottom portion 33 and the side wall 37 of the recess 12 of the pocket, and is loosely fitted in a predetermined position by the movement control convex portion 4 to cover the tape 7. It is a carrier tape that is sealed with. (It should be noted that the loose fitting described in this specification means that the semiconductor element 6 can be moved to a certain extent while the movement range is restricted by the movement control convex portion 4 provided between the pedestal 3 and the side wall 37. The surface resistivity of the surface of the pocket and the cover tape sealant layer is 10 in an environment of 23 ° C. and 90% RH.
It is a carrier tape for semiconductor devices that is no larger than ¹² Ω / □.

The movement control convex portion 4 is a carrier tape for a semiconductor device, which is provided in a rod shape or a plate shape.

Further, the carrier tape for semiconductor is provided with a concave air reservoir near the center of the pedestal so as to reduce the contact area with the semiconductor element portion.

The base material of the plastic strip-shaped molded article is a plastic sheet having a thickness of 0.1 to 0.8 mm, and the opening for a pocket for a component formed in the same step as the feeding hole for transportation provided in the base material. It is a carrier tape for a semiconductor element, in which a pocket for a component is formed by injection molding in a portion.

In the carrier tape of the present invention, as shown in FIG. 1, the metal lead portion 61 of the semiconductor element 6 is placed in the pocket 1 on the pedestal 3 of the band-shaped molded article 10 in which the semiconductor element 6 is provided in the band-shaped base material 2 and the pocket 1 is provided. It is housed in a suspended state, is loosely fitted in a predetermined position by the movement control convex portion 4, and is sealed by the cover tape 7.

The band-shaped substrate 2 is selected in consideration of film forming suitability, hole processability, molding resin for the pocket 1 and adhesiveness with the cover tape 7. Specifically, polypropylene,
Polyethylene, ethylene / vinyl acetate copolymer, ethylene / acrylic acid copolymer, ethylene / acrylic ester copolymer, ionomer, saponified ethylene / vinyl acetate copolymer, polyvinyl chloride, polyester, polycarbonate, polystyrene, ABS A resin or the like or a mixture thereof is used. Then, if necessary, a tackifier, a wax, an inorganic or organic filler, a lubricant and the like can be added.

The thickness of the strip-shaped substrate depends on the material, but is 0.1.
˜0.8 mm, preferably a stretched or unstretched sheet of 0.1 to 0.6 mm. If the thickness is less than 0.1 mm, the carrier tape has low rigidity and is not suitable for transportation because it is cut by tension when applied to it at high speed and when it is filled with a semiconductor element, it is bent by the load of the semiconductor element. If the thickness is 0.8 mm or more, the rigidity becomes too strong and the flexibility is lost, and it becomes impossible to wind a long length. Also, the width of the sheet is determined by the width of the carrier tape,
After the pockets 1 are additionally formed by forming openings for pockets in multiple rows having a width of about 300 mm, slitting is performed on a desired row.

The charging treatment of the strip-shaped substrate can be carried out by kneading the antistatic agent into the substrate resin or by coating the surface of the film-forming sheet or the surface of the injection-molded pocket.

Examples of the antistatic agent include the following. Conductive carbon having a particle size of 0.02 to 0.15 μm and a surface area of 40 m ² / g or more, such as Ketjen black, acetylene black, and furnest black. A conductive fine powder having a primary particle size of 0.01 to 1 μm obtained by subjecting a metal oxide such as tin oxide, indium oxide, or zinc oxide, a metal sulfide, or a sulfate to a conductive treatment such as doping. A conductive fine powder mainly composed of a fibrous or powdery metal having a particle diameter of 0.01 to 10 μm, such as copper, iron, aluminum, nickel and gold. Anionic, cationic, nonionic, and zwitterionic surfactants. Fatty acid derivative, tetrafunctional silicon partial hydrolyzate, bis-
Ammonium-based organic semiconductor. Among the above antistatic agents, metal oxides, surfactants,
Alternatively, conductive carbon is preferable from the viewpoints of static electricity removal characteristics and non-contamination of semiconductor elements.

The treatment with the antistatic agent is carried out by a kneading method in which the resin is mixed in the film-forming step, or by coating the film-formed sheet.

The kneading method is such that an antistatic agent is added in an amount of 1 to 300% by weight, particularly 5 to 5 parts by weight, based on 100 parts by weight of the resin.
It is preferable to add 0% by weight. When the antistatic agent is less than 1% by weight, its surface resistivity is 10 ¹³ Ω / □ or more at 23 ° C. and 90% relative humidity (hereinafter, the measurement of the surface resistivity was performed at 23 ° C. and 90% relative humidity). Enter the value), 2
5000V to 500V at 3 ° C and 15% relative humidity
The decay time (charge decay time) until it decays to 5 seconds or more (hereinafter, the measurement of the charge decay time is the value measured under the above conditions), and the effect of removing static electricity is not sufficient. The circuit of the electronic component may be short-circuited or damaged due to static electricity generated by the contact with the pocket and the static electricity generated when the cover tape is peeled off. On the other hand, if the antistatic agent exceeds 300% by weight, not only the melt viscosity at the time of film formation increases and the fluidity decreases, but also when the film is formed, it becomes brittle and the required strength cannot be maintained.

The antistatic coating solution used in the coating method is prepared by dispersing an antistatic agent in a varnish obtained by dissolving or dispersing synthetic resin as a binder.

The binder of the antistatic coating liquid is polyester, polyurethane, polystyrene, vinyl chloride / vinyl acetate copolymer, polyvinyl butyral, methyl cellulose, ethyl cellulose, ethylene / vinyl acetate copolymer, acrylic resin, silicone resin varnish, It is also possible to use polycarbonate or the like, a modified product thereof, a mixture thereof, or an acrylate or silicone which is a thermosetting or ionizing radiation curable resin. And
As the solvent for dissolving or dispersing the binder, not only usual organic solvents such as ester, hydrocarbon, ketone, alcohol, etc. but also a solution or dispersion using water is used.

The amount of the antistatic agent added is 1 to 300% by weight, based on 100 parts by weight of the binder of the antistatic coating liquid.
It is particularly preferable to add 5 to 150% by weight. When the antistatic agent is less than 1% by weight, the surface resistivity is 10 ¹³ Ω
/ □ or more, and the charge decay time is 5 seconds or more, the effect of removing static electricity is not sufficient, and the circuit of the electronic component may be short-circuited or damaged. Further, when the antistatic agent exceeds 100% by weight, the adhesion and strength of the coating film may be deteriorated and the coating film may fall off.

The coating thickness of the antistatic agent has a surface resistivity of 1
It can be appropriately set to be 0 ¹² Ω or less / □ or less, but it is limited by the cost and the coating machine.
˜100 μm, preferably 1 to 50 μm. Also,
If the adhesion of the coating film to the substrate is not sufficient, urethane-based, isocyanate-based, polyethyleneimine-based varnish or the like can be used as a primer on the coated surface of the substrate.

The above-mentioned strip-shaped substrate can be composed of a single layer or a multilayer laminate of two or more layers. Multilayer is cost,
Mechanical properties of the base material (elongation, rigidity, flexibility, tensile strength, tear strength, etc.), thermal characteristics (heat resistance, cold resistance, softening temperature, etc.), environmental characteristics (chemical resistance, solvent resistance, water resistance) Properties, radiation resistance, light resistance, wasteability, etc.), gas permeation characteristics (oxygen barrier property, water vapor permeability, inorganic or organic gas barrier property, etc.), water absorption property, etc. can be selected for the configuration.

The materials constituting the multilayer laminate are thermoplastic resins such as polyester, polyurethane, polystyrene,
Vinyl chloride / vinyl acetate copolymer, cellulose derivative,
Ethylene / vinyl acetate copolymer, ethylene / acrylic acid copolymer, ethylene / acrylic ester copolymer, ionomer, polyvinyl alcohol, saponified ethylene / vinyl acetate copolymer, acrylic resin, silicone resin, polycarbonate only Alternatively, a film of cellophane or the like can be used in addition to unsaturated polyester, thermosetting resin, or acrylate or silicone which is an ionizing radiation curable resin.

The multi-layer laminate is obtained by laminating or applying single layer sheets of the above materials. And
At least any one layer of the sheet or one layer of the coating film containing an antistatic agent can be combined.

The surface resistivity of the conductive layer included in the multilayer laminate preferably has a charge decay time of 5 seconds or less. When the surface resistivity is 10 ¹² Ω / □ and the charge decay time exceeds 5 seconds, the effect of removing static electricity is not sufficient, and the circuit of the electronic component may be short-circuited or damaged.

The thickness of the unit layer constituting the multilayer laminate is
0.1 to 600 μm is preferable, and if it is 0.1 μm or less, the characteristics of the constituted layer cannot be obtained, and if it is 600 μm or more, it becomes difficult to wind the plastic strip-shaped substrate without impairing its flexibility. .

The plastic band-shaped substrate can be formed into a film by a known method. For example, the film is formed by stretching or unstretching such as T-die method, circular die method, solvent melt casting method, calender method and the like.

The plastic strip-shaped substrate made of a multi-layer laminate is formed by a thermal lamination, a hot-melt adhesive or a dry lamination method using an isocyanate adhesive, or an isocyanate-based or imine-based primer layer of two or more layers of film or sheet. Further, the thermoplastic resin can be obtained by a usual method such as a melt extrusion coating method and a coextrusion film forming method by the T-die method.

The film-forming method by coating the multi-layer laminate includes direct or reverse coating using a gravure plate or oblique printing plate, roll coating, comma coating, air knife coating, etc., as well as silk printing, transfer printing and dry offset printing. A known coating or printing method such as a printing method or a pad printing method can be used.

The pocket formed by the injection molding method is preferably selected from materials that are heat-sealed with the plastic which is a component of the belt-shaped base material in consideration of cost, moldability and mechanical properties. For example, polypropylene. , Polyvinyl chloride, polyester, polycarbonate, polystyrene, ABS resin, polyurethane, vinyl chloride / vinyl acetate copolymer, ethylene / vinyl acetate copolymer, ethylene / acrylic acid copolymer, ethylene / acrylic acid ester copolymer, Ionomer, polyvinyl alcohol, saponified ethylene / vinyl acetate copolymer and the like are used. Then, if necessary, a tackifier, a wax, an inorganic or organic filler, a lubricant and the like can be added.

When the injection-molded pocket and the plastic strip base material are fixed by fitting, a material other than heat-weldable material can be freely selected.

The thickness of the pocket is determined by the shape and weight of the semiconductor element to be filled, and an excessive thickness should be avoided and is 3 mm at maximum.

The charging treatment of the resin used in the injection molding method can be carried out by kneading the antistatic agent or coating the surface of the molded product. As the antistatic agent used for kneading, the same ones as those used for the plastic belt-like substrate can be used, and the following ones can be mentioned. Conductive carbon having a particle size of 0.02 to 0.15 μm and a surface area of 40 m ² / g or more, such as Ketjen black, acetylene black, and furnest black. A conductive fine powder having a primary particle size of 0.01 to 1 μm obtained by subjecting a metal oxide such as tin oxide, indium oxide, or zinc oxide, a metal sulfide, or a sulfate to a conductive treatment such as doping. A conductive fine powder mainly composed of a fibrous or powdery metal having a particle diameter of 0.01 to 10 μm, such as copper, iron, aluminum, nickel and gold. Anionic, cationic, nonionic, and zwitterionic surfactants. Fatty acid derivative, tetrafunctional silicon partial hydrolyzate, bis-ammonium organic semiconductor. Among the above antistatic agents, metal oxides, surfactants,
Alternatively, conductive carbon is preferable from the viewpoints of static electricity removal characteristics and non-contamination of semiconductor elements.

The treatment with the antistatic agent is carried out by a kneading method that is mixed in in the injection molding process, or by coating the film-formed sheet. In the kneading method, it is preferable to add the antistatic agent in an amount of 1 to 300% by weight, particularly 5 to 50% by weight, based on 100 parts by weight of the resin. When the antistatic agent is less than 1% by weight, the surface resistivity is 10 ¹³ Ω / □
As described above, the decay time (charge decay time) is 5 seconds or more, the effect of removing static electricity is not sufficient, and the circuit of the electronic component is generated by static electricity generated when the semiconductor element is in contact with the pocket or when the cover tape is peeled off. , Short circuit or damage may occur. When the antistatic agent exceeds 300% by weight,
Not only the melt viscosity at the time of injection molding increases and the fluidity decreases, but also the injection molded product becomes brittle and the required strength cannot be maintained.

The antistatic coating liquid for the pocket is prepared by adding an antistatic agent to a varnish dissolved or dispersed in a solvent, mainly synthetic resin as a binder.

The binder is polyester, polyurethane, polystyrene, vinyl chloride / vinyl acetate copolymer,
Cellulose derivatives, ethylene / vinyl acetate copolymers, acrylic resins, silicone resin varnishes, polycarbonates and the like, modified products thereof, mixtures of these, or acrylates which are thermosetting or ionizing radiation curable resins,
Silicone can also be used.

The solvent that dissolves or disperses the binder is not limited to ordinary organic solvents such as esters, hydrocarbons, ketones and alcohols, but is also used as a solution or dispersion using water.

The amount of the antistatic agent added is 1 to 300% by weight, based on 100 parts by weight of the binder of the antistatic coating liquid.
It is particularly preferable to add 5 to 50% by weight. When the antistatic agent is less than 1% by weight, the surface resistivity is 10 ¹³ Ω /
□ Above, the charge decay time is 5 seconds or more, the effect of removing static electricity is not sufficient, and the circuit of the electronic component may be short-circuited or damaged. Further, when the antistatic agent exceeds 300% by weight, the adhesion and strength of the coating film may be deteriorated and the coating film may fall off.

The thickness of the antistatic coating film has a surface resistivity of 1
It can be appropriately set so as to be 0 ¹² Ω or less / □ or less, but it is also limited by the cost and the coating machine.
It is 1 to 100 μm, preferably 2 to 50 μm.

As the antistatic coating liquid, in addition to spray coating, known coating methods such as silk printing method, transfer printing method, dry offset printing method, pad printing method and the like, and in the case of molded articles, printing methods are effective.

The method for adhering the pocket 1 formed by injection molding to the belt-shaped substrate 2 can be appropriately selected by a known method. Preferably, a pocket previously formed by an injection molding method is bonded to the bonding portion of the pocket opening provided on the strip-shaped base material by a bonding method such as an ultrasonic bonding method, a high frequency bonding method, a heat sealing method, an adhesive, or a solvent. It is fixed by using a chemical adhesion method according to, a physical adhesion method such as fitting. Alternatively, a method is used in which a strip-shaped article base material having an opening for a pocket provided in advance is attached to an injection molding die, and the pocket is formed, and at the same time, melt bonding is performed at the bonding portion.

The cover tape used in the strip-shaped molded article of the present invention is a conventionally used base sheet, which has a heat-sensitive seal adhesive layer or an adhesive seal-type adhesive as an adhesive seal layer to the strip-shaped base material. A layer, an ionizing radiation-curable seal adhesive layer, or a microcapsule type seal adhesive layer may be used. A particularly preferable adhesive layer is a heat sealant layer made of a heat sensitive adhesive.

The basic layer structure of the cover tape is exemplified as follows. Base sheet / adhesive layer / intermediate layer / heat sealant layer Base sheet / adhesive layer / intermediate layer / adhesive layer / biaxially stretched film layer / heat sealant layer Base sheet / heat sealant layer As the biaxially stretched film, a uniaxially stretched film such as polyester, polypropylene or nylon, a biaxially stretched film, an unstretched film or a synthetic paper can be used.

The intermediate layer includes polyolefin, polystyrene, ethylene / vinyl acetate copolymer, ethylene / acrylic acid copolymer, ethylene / acrylic acid ester copolymer, ionomer, polyester and modified products or mixtures thereof.

The heat sealant layer is made of polyurethane, polyester, acrylic resin, vinyl chloride / vinyl acetate copolymer, ethylene / vinyl acetate copolymer, ethylene.
It can be appropriately selected from acrylic acid copolymers, ethylene / acrylic acid ester copolymers, ionomers, silicones and the like.

Then, in order to provide the cover tape with antistatic properties, an antistatic agent similar to the above-mentioned plastic strip-shaped substrate is added to at least one of the constituent layers.
For example, a surfactant or a bisammonium-based organic semiconductor layer can be formed on the surface of the heat sealant layer.

There are the following peeling modes of the cover tape. Desirably, the peeling strength is 100 to 1000 g / 15 mm width after the interlayer peeling, and the maximum value and the minimum value at the time of peeling are used. It is desirable that the difference is less than 100 g / 15 mm width. Interfacial peeling type that peels between the heat sealant layer and the plastic strip base material. A cohesive failure type that breaks and peels inside the heat sealant layer. Delamination type that peels between the heat sealant layer and the intermediate layer or the biaxially stretched film layer.

As described above, the carrier tape for a semiconductor device of the present invention is formed on the plastic sheet at room temperature in the same step in the same step on the strip-shaped base material of the plastic sheet in which the feed holes and the pocket openings are formed. It is formed by providing a pocket using an injection molding resin that can be heat melt-bonded. Therefore, it is a carrier tape having both the shape-stable pocket and the flexibility of the dimensionally stable strip-shaped substrate sheet, and can be wound.

That is, since the pocket is an injection molded product, the dimensional accuracy and thickness accuracy of the pocket side wall, pocket recess, pedestal, and movement control convex portion are stable. Further, it is possible to eliminate the deformation and bending of the pedestal, the movement control convex portion and the pocket side wall due to the impact. In addition, the movement control convex portion provided between the pedestal and the side wall of the pocket allows the semiconductor element accommodated in the pedestal to be stably moved even during transfer, so that the semiconductor element can be loosely fitted, and static electricity due to friction or damage can be generated. Is to prevent.

The heat sealing between the carrier tape and the cover tape processed at room temperature has the effect of stabilizing the peel strength without any uneven pattern on the surface.

The carrier tape has good productivity not only by kneading conductive fine powder but also by applying it.

A method of manufacturing the carrier tape for semiconductor device of the present invention will be described with reference to the drawings.

The feed hole 21 and the pocket opening 22 shown in FIG. 1 (B) are formed in a rolled shape by a method of punching a plastic sheet with a press die, a Thomson blade or a cutter blade, laser processing, or the like. Then
The feed hole 21 and the plastic band-shaped base material 2 provided with the pocket opening 22 are inserted into the injection unit of a known injection molding machine provided with a winding unit and a winding unit. Alternatively, and / or positioning is performed by the pocket opening portion 22, and the molten resin is injected and injected into the cavity to form the pocket 1 on the plastic strip-shaped substrate 2 and shown in FIGS. 1 (A), 1 (C) and 1 (D). As described above, the band-shaped molded product 10 is formed by fusion bonding at the end portion of the opening 22 of the band-shaped substrate 2 and the upper portion of the pocket at the bonding portion 16 of the band-shaped substrate and the pocket. At this time, be careful so that the molding resin does not adhere to the heat-sealing surface of the strip-shaped base material 2 with the cover sheet.

Then, the band-shaped molded product 10 is slitted and wound up in a desired row to form a roll-up of the band-shaped molded product 10. Further, the belt-shaped base material 2 is provided with a feed hole 21 and a pocket opening 22 by a press die composed of a cavity and a core, and injection molding is carried out in succession to the process to prepare a belt-shaped molded product 10. You can also

The pocket 1 formed by the injection molding method is shown in FIG.
As shown in FIG. 2, the pedestal 3 on which the semiconductor element 6 is mounted and the metal lead portion 61 can be accommodated in the recess 12 of the pocket 1 in a suspended state. Then, a plate-shaped or rod-shaped movement control convex portion 4 is formed between the pedestal 3 and the pocket side wall in order to prevent the metal lead portion 61 from being bent, bent, or chipped.

The recess 12 of the pocket 1 has a space in which the metal lead portion 61 of the semiconductor element does not contact the pocket side wall 37 and the pedestal 3. 2B to 2E, which are provided in the recesses 12 located on the pedestal 3 and the pocket side wall 37.
The peripheral plate movement control convex portion 41, the corner plate movement control convex portion 42, the side plate movement control convex portion 43 and the peripheral rod movement control convex portion 44 shown in FIG. 3A and 3B, the accommodation loose fitting position 63 in which the storage position of the element is regulated by one movement control convex portion, or the storage position of the element is regulated by the two movement control convex portions. The metal lead portion 61 and the side wall 37 are not brought into contact with each other by being restricted by the storage loose fitting position 64.

As shown in FIG. 5, the semiconductor element 6 is placed on the pedestal 3, and the projection height A from the metal lead portion 61 to the tip 46 of the movement control convex portion 4 is 0.01 to 5.0 mm. , Preferably 0.1 to 2.0 mm.
If the projection height A is less than 0.01 mm, the pedestal 3
When the semiconductor element 6 is housed in the
If the movement control convex portion controls the semiconductor element 6 to the loose fitting position, the pocket side wall 37 is not provided. In addition, the metal lead portion 6 of the semiconductor element
Contact with 1 may cause a defect.

The gap distance B between the tip 46 of the rod-shaped or plate-shaped movement control convex portion and the pocket side wall 37 shown in FIG. 5 is set in accordance with the size of the metal lead portion 61 of the semiconductor element. The distance between the side wall 37 and the tip of the metal lead portion 61 is 0.5 to 20 mm, preferably 2 to 10 mm.

The cross-sectional shape of the movement control convex portion 4 shown in FIG. 5 is not particularly specified, but the radius of curvature R of the tip 46 of the movement control convex portion is 0.1 to 8.0 mm, preferably 0.1. 5-
It is preferably 3 mm, and even if the metal lead portion 61 and the movement control convex portion erroneously come into contact with each other due to the absence of the edge portion at the tip, a defect is less likely to occur. The thickness D of the movement control convex portion is preferably about 0.1 to 8 mm. When the thickness D of the movement control convex portion is less than 0.1 mm, the rigidity of the movement control convex portion is insufficient, and the metal lead portion 61 may be damaged due to deformation due to impact or pressure, and also exceeds 8 mm. Therefore, the amount of material used increases, the size of the pocket and the weight of the pocket increase, and not only the material cost is reconciled, but also when the carrier tape is wound, the plastic strip-shaped base material is bent and it is difficult to wind it.

The rising portion 45 of the movement control convex portion can be selected as appropriate, but the shock resistance, pressure resistance, heat resistance, bending resistance,
In order to maintain the tensile strength, the bottom open type convex portion 4A or the pedestal open type convex portion 4B shown in FIGS. 6 (A) and 6 (B) is also used.
Therefore, the bottom closed convex portion 4C or the base closed convex portion 4D shown in (C) and (D) is preferable.

When the semiconductor element is stored in the pocket pedestal,
When the contact portion of the semiconductor element with the pedestal 3 is flat as shown in FIG. 2, an air layer of a thin film is likely to be generated at the contact portion, and the semiconductor element jumps due to the pressure fluctuation of the air layer. The metal lead portion 61 may come into contact with the side wall 37, the bottom portion 33, or the pedestal 3 and be damaged due to movement such as tilting or rotation.

The amount of electrostatic charges generated during the transportation of the semiconductor element is proportional to the work function (contact frequency, friction frequency, pressure, contact area, etc.). Therefore, if the number of times of friction, the number of times of contact, and the contact pressure are the same, the amount of static electricity generated increases when the contact area between the semiconductor element and the pedestal is large, and dust intrusion and adhesion of dust to the metal leads As a result, the function of the semiconductor element is impaired and the electric circuit is short-circuited due to the generated electrostatic load, and the function of the semiconductor element is lost.

In order to reduce the amount of static electricity generated,
It is effective to reduce the contact area. As a method for reducing the contact area, as shown in FIG.
It is preferable to provide an air reservoir 5 which is a portion that does not come into contact with the semiconductor element.

The following method is effective for specifically constructing the air reservoir 5. As a positioning hole for accommodating the metal lead portion 61 so as not to contact the bottom portion 33 and the side wall 37 when accommodating the semiconductor element, the pedestal hole 31 penetrated as shown in FIG.
Is provided in the center of the pedestal 3 to allow air to escape. As shown in FIG. 9, a method of forming a flow path type air reservoir 51 of air radially in the central direction of the pedestal 3. A method of forming a recess near the center of the pedestal shown in FIG. 10 to provide a recess-type air reservoir 52. In this case, it is more effective to provide the recessed portion 52b by inclining the recessed air reservoir 52 toward the central portion so as to be deeper as shown in FIG. The step depth 52h of the added recess is 0.05 to 10 mm, preferably 0.1.
~ 5 mm. When the step depth 52h is less than 0.5 mm, the effect of accumulating the air layer is small, and when it exceeds 5 mm, the pocket becomes deeper, so that the molding material increases,
The cost and the side wall 37 of the entire pocket become large and deep, which makes it difficult to wind the band-shaped molded product. As shown in FIG. 11, a method of matting the surface of the pedestal to provide a rough surface type air reservoir 53 which is a flow path of air. The matting process has a center line average roughness of 1.
The maximum height is 0 mm or less and the maximum height is 2.0 mm or less. In the waviness curve, the center line waviness is preferably 1.0 mm or less and the maximum waviness is preferably 2.0 mm or less. A method of forming a concave-convex air reservoir 54 having a concave-convex groove shape including convex portions 54a and concave portions 54b shown in FIG.

In the flow path type air reservoir 51, the concave type air reservoir 52, the rough surface type air reservoir 53, and the concavo-convex air reservoir 54 shown in and above, the area of the contact portion between the semiconductor element 6 and the pedestal 3 is also small. Therefore, the amount of generated electrostatic charges is small, and it is effective in preventing the entry of dust and protecting the function of the semiconductor circuit.

Further, the pedestal hole 31, the rough surface type air reservoir 53, the channel type air reservoir 51, the concave type air reservoir 52, the concave and convex type air reservoir 54 formed by the concave and convex grooves, etc. are appropriately combined to produce a synergistic effect. It is a thing. For example, (a) the pedestal 3 shown in FIGS. 13A and 13B in which the pedestal hole 31 and the flow path type air reservoir 51 are combined. (b) The pedestal 3 shown in FIG. 14 in which the pedestal hole 31 and the recessed air reservoir 52 are combined. (c) The pedestal 3 shown in FIG. 15 in which the pedestal hole 31 and the rough surface type air reservoir 53 are combined. (d) Pedestal hole 31, concave air reservoir 52 and rough surface air reservoir 5
Pedestal 3 shown in FIG. 16 in combination with 3. (e) Pedestal hole 31, flow path type air reservoir 51 and rough surface type air reservoir 5
Pedestal 3 shown in FIG. 17 in combination with 3. (f) The pedestal 3 shown in FIG. 18 in which the pedestal hole 31 and the uneven air reservoir 54 are combined. (g) Pedestal hole 31, recessed-type air reservoir 52, and channel-type air reservoir 5
The pedestal 3 shown in FIG. 19 in combination with 1. (h) Pedestal hole 31, rough surface type air reservoir 53 and uneven air reservoir 5
The pedestal 3 shown in FIG.

[0074]

The carrier tape for a semiconductor device of the present invention comprises a plastic strip-shaped base material having a feed hole and a pocket opening formed in a plastic sheet at room temperature in the same step, and an injection-molded pocket with high molding accuracy. It is composed by combining. Therefore, it is possible to configure the winding of the carrier tape having flexibility of the pocket having shape stability and the sheet having dimension stability.

The convex pedestal on which the semiconductor element formed in the pocket is placed can be freely formed. The movement control convex portion provided on the peripheral portion of the pedestal restricts the storage range of the semiconductor element and loosely fits, and has an effect of preventing damage to the semiconductor element due to static electricity or contact between the metal lead portion and the side wall. The accuracy of the position of the pedestal hole formed by injection molding and the processing of the feed hole, which is performed on the plastic sheet at room temperature, are stable in hole size and pitch accuracy.

The heat-sealing between the carrier tape and the cover tape processed at room temperature has the effect of stabilizing the peel strength without any uneven pattern on the surface. The carrier tape has good productivity not only by kneading conductive fine powder but also by applying it.

[Brief description of drawings]

FIG. 1A is a conceptual diagram showing a cross section of a carrier tape of the present invention in which a semiconductor element is housed. It is a conceptual diagram which shows the plane of (B) strip | belt-shaped base material. (C) It is a perspective view showing the concept of a band-shaped molded product. (D) It is a conceptual diagram which shows the II cross section of a strip-shaped molded product.

FIG. 2A is a conceptual sectional view showing a housed state of a semiconductor element housed and held by a movement control convex portion. (B) It is a plane conceptual diagram which shows the position of the plate-shaped movement control convex part provided in the peripheral part. (C) It is a plane conceptual diagram showing a position of a plate-shaped movement control convex portion provided in a corner portion. (D) It is a plane conceptual diagram which shows the position of the plate-shaped movement control convex part provided in the side part. (E) It is a plane conceptual diagram showing the position of the rod-shaped movement control convex portion provided on the peripheral portion.

FIG. 3 (A) is a plan view of a concept showing a loose fitting position of a semiconductor element. (B) It is a plan view of another concept showing another accommodation loose fitting position of the semiconductor element.

FIG. 4A is a sectional view showing a positional relationship in a pocket accommodating a semiconductor element. (B) It is a cross-sectional conceptual diagram showing the formation position from the bottom of the movement control convex portion. (C) It is a cross-sectional conceptual diagram showing the formation position of the movement control convex portion from the other bottom portion. (D) It is a cross-sectional conceptual diagram showing the formation position of the movement control convex portion from the pedestal.

FIG. 5 is a conceptual cross-sectional view for dampening the dimensional relationship of the setting positions of the movement control convex portions.

FIG. 6A is a schematic cross-sectional view showing the shape of a bottom open-type movement control convex portion. FIG. 3B is a schematic cross-sectional view showing the shape of a pedestal open type movement control convex portion. FIG. 3C is a schematic cross-sectional view showing the shape of a bottom closed type movement control convex portion. (D) is a schematic sectional view showing the shape of a pedestal closed type movement control convex portion.

FIG. 7A is a schematic sectional view of a pedestal provided with an air reservoir.

FIG. 8A is a conceptual diagram of a cross section showing a pedestal provided with a pedestal hole. (B) It is a conceptual diagram which shows the planar shape of the air reservoir by the said shape.

FIG. 9A is a conceptual diagram of a cross section showing a pedestal provided with a flow path type air reservoir. (B) It is a conceptual diagram which shows the planar shape of the air reservoir by the said shape.

FIG. 10 (A) is a conceptual diagram of a cross section showing a pedestal provided with a recessed air reservoir. (B) It is a conceptual diagram which shows the planar shape of the air reservoir by the said shape.

FIG. 11A is a conceptual diagram of a cross section showing a pedestal provided with a rough surface type air reservoir. (B) It is a conceptual diagram which shows the planar shape of the air reservoir of the said shape.

FIG. 12A is a conceptual diagram of a cross section showing a pedestal provided with an uneven air reservoir. (B) It is a conceptual diagram which shows the planar shape of the air reservoir of the said shape.

FIG. 13 (A) is a conceptual view of a cross section in which a pedestal hole and a channel type air reservoir are combined. (B) It is a conceptual diagram which shows the planar shape of the air reservoir of the said shape.

FIG. 14 is a conceptual diagram of a cross section showing a pedestal in which a pedestal hole and a recess-type air reservoir are combined.

FIG. 15 is a conceptual sectional view showing a pedestal in which a pedestal hole and a rough surface type air reservoir are combined.

FIG. 16 is a conceptual diagram of a cross section showing a pedestal in which a pedestal hole, a rough surface type air reservoir, and a recessed type air reservoir are combined.

FIG. 17 is a conceptual diagram of a cross section showing a pedestal in which a recess hole type air reservoir is combined with a pedestal hole, a rough surface type air reservoir, and a flow path type air reservoir.

FIG. 18 is a conceptual view of a cross section showing a pedestal in which a pedestal hole and a concave-convex air reservoir are combined with a concave air reservoir.

FIG. 19 is a conceptual view of a cross section showing a pedestal in which a pedestal hole, a channel type air reservoir, and a recessed type air reservoir are combined.

FIG. 20 is a conceptual diagram of a cross section showing a pedestal in which a pedestal hole, a rough surface type air reservoir, and a concave-convex type air reservoir are combined with a concave type air reservoir.

[Explanation of symbols]

 1 Pocket 10 Band-shaped molded product 12 Pocket recessed part 16 Adhesive part 2 Band-shaped base material 21 Feed hole 22 Opening part 3 Pedestal 31 Pedestal hole 32 Movement control convex rising part 33 Bottom 34 Degassing groove 37 Side wall 4 Movement control convex Part 41 Peripheral part Wall-shaped movement control convex part 42 Corner part Plate-shaped movement control convex part 43 Side part Plate-shaped movement control convex part 44 Perimeter part rod-shaped movement control convex part 46 Tip of movement control convex part 47 Bottom part Rise type convex part 48 Pedestal holding type convex part 49 Pedestal protruding type convex part 4A Bottom open type convex part 4B Pedestal open type convex part 4C Bottom closed convex part 4D Pedestal closed type convex part 5 Air reservoir 51 Flow Channel Air Reservoir 52 Concave Air Reservoir 52b Air Recess Recess 52h Step Depth 53 Rough Surface Air Reservoir 54 Rough Air Reservoir 54a Air Reservoir Convex 54b Air Reservoir Recess 6 Semiconductor Element 61 Metallic 63, 64 Position for loose fitting of semiconductor device 7 Cover tape A Distance between tip of movement control convex portion and metal lead portion B Distance from side wall to movement control convex portion C Pedestal to movement control convex portion Distance to D Width of convex part of movement control

─────────────────────────────────────────────────── ───

[Procedure amendment]

[Submission date] December 7, 1995

[Procedure amendment 1]

[Document name to be amended] Statement

[Name of item to be corrected] Figure 7

[Correction method] Change

[Correction contents]

FIG. 7 is a schematic cross-sectional view of a pedestal provided with an air reservoir.

[Procedure amendment 2]

[Document name to be amended] Drawing

[Correction target item name] FIG.

[Correction method] Change

[Correction contents]

FIG.

Claims (10)

[Claims] 1. A component pocket for accommodating a semiconductor element comprising a metal lead portion and a plastic molding portion,
In a carrier tape for a semiconductor device, which comprises a plastic tape-shaped molded product having at least one transporting hole provided at equal intervals on one side and a heat sealant layer for heat-sealing the pocket, the semiconductor of the component pocket portion in a carrier tape for a semiconductor device. Surface resistivity or volume resistivity in the vicinity of contact with the device is 10 ¹² Ω / □ under the conditions of 23 ° C and relative humidity of 90%.
It is not larger, and the pocket does not come into contact with the metal lead portion between the pedestal that supports the semiconductor element and the side wall of the pedestal and the pocket portion so that the metal lead portion of the semiconductor element does not come into contact with the bottom surface and the sidewall of the pocket portion. A movement control convex portion that restricts movement of the semiconductor element is formed, and the surface resistivity of the heat sealant layer of the cover tape is 23 ° C.
A carrier tape for a semiconductor element, which is not more than 10 ¹² Ω / □ under a 90% RH environment. 2. The carrier tape for a semiconductor device according to claim 1, wherein the movement control convex portion is provided in a rod shape or a plate shape. 3. The carrier for semiconductors according to claim 1, wherein a concave air reservoir is provided in the vicinity of the central portion of the base of the base so as to reduce the contact area with the semiconductor element portion. tape. 4. A plastic strip-shaped base material is a plastic sheet having a thickness of 0.1 to 0.8 mm, and a component pocket opening formed in the same step as a transport feed hole provided in the base material. 4. The carrier tape for a semiconductor device according to claim 1, wherein the carrier tape is a component pocket formed by injection molding on the portion. 5. A component pocket formed by injection molding at a pocket-shaped opening of a strip-shaped base material having a thickness of 0.1 to 0.8 mm in which a component pocket opening and a transport feed hole are provided at equal intervals. It is provided, Claim 1, characterized by the above-mentioned.
2. The carrier tape for a semiconductor device according to 2 and 3. 6. The base material of the plastic strip-shaped molded article,
It is composed of a thermoplastic resin and conductive fine powder having a particle diameter of 0.01 to 1 μm obtained by subjecting tin oxide, indium oxide or zinc oxide to conductive treatment, or conductive carbon, and a surfactant, and the conductive fine powder or conductive carbon is used. , Surfactant is thermoplastic resin 1
The carrier tape for a semiconductor device according to claim 1, wherein the carrier tape is contained in an amount of 1 to 300% by weight based on 100 parts. 7. The base material of the plastic strip-shaped molded article,
At least one side of a conductive coating agent in which tin oxide, indium oxide, zinc oxide is subjected to a conductive treatment, conductive fine powder having a particle diameter of 0.01 to 1 μm or conductive carbon and a surfactant are dispersed and adjusted in a resin varnish. The carrier tape for a semiconductor device according to claim 1, wherein the carrier tape is provided by being applied onto the carrier tape. 8. The base material of the plastic strip-shaped molded article,
2. The carrier tape for a semiconductor device according to claim 1, wherein the carrier tape is a laminate of two or more layers, and at least the volume resistivity of the inner surface layer in contact with the semiconductor device does not exceed 10 ¹² Ω · cm. . 9. A conductive fine powder or conductive carbon having a particle diameter of 0.01 to 1 μm, wherein the component pocket is made by subjecting a thermoplastic resin and a metal oxide such as tin oxide, indium oxide or zinc oxide to a conductive treatment. And a surface-active agent, wherein the conductive fine powder, or the conductive carbon and the surface-active agent are contained in an amount of 1 to 300% by weight based on 100 parts of the thermoplastic resin, and the surface resistivity of which does not exceed 10 ¹² Ω / □. The carrier tape for a semiconductor device according to claim 1, which is a molded product. 10. A conductive fine powder or conductive carbon having a particle diameter of 0.01 to 1 μm obtained by subjecting a metal oxide such as tin oxide, indium oxide, or zinc oxide to a conductive treatment, and an interface on at least one surface of the component pocket. 2. The carrier tape for a semiconductor element according to claim 1, wherein a conductive coating agent in which an activator is dispersed and adjusted in a resin varnish is provided on at least one side.