JPH09181398A - Semiconductor light emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a II-VI compound semiconductor light emitting device long in service life and high in reliability. SOLUTION: A light emitting device structure composed of an N-type Zno0.68 asMg0.2 Cd0.12 Se clad layer 9, a Zn0.75 Cd0.25 Se active layer 10, and a P-type Zn0.68 ME0.2 Cd0.12 Se clad layer 11 is laminated on an N-type GaAs substrate 1 through the intermediary of an N-type In0.3 Ga0.7 As layer 8 lattice-matched to the device structure. An N-type In0.05 Ga0.95 As layer 3, an N-type In0.1 Ga0.9 As layer 4, an N-type In0.15 Ga0.85 As layer 5, an N-type In0.2 Ga0.8 As layer 6, and an N-type In0.25 Ga0.75 As layer 7 are interposed between the N-type InGaAs substrate 1 and the N-type In0.3 Ga0.7 As layer 8 so as to relax lattice mismatching.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device, and is particularly suitable for application to a semiconductor light emitting device using a II-VI compound semiconductor, such as a semiconductor laser or a light emitting diode.

[0002]

2. Description of the Related Art In recent years, there has been a demand for a semiconductor laser capable of emitting blue or green light in order to increase the recording / reproducing density or the resolution of an optical disk or a magneto-optical disk for recording / reproducing using a laser beam. It is increasing, and active research is being conducted with the aim of putting it to practical use.

Materials used for manufacturing such a semiconductor laser capable of emitting blue or green light are Zn and M.
Group II elements such as g and Cd and VIs such as Se, S and Te
II-VI group compound semiconductors composed of group elements are the most promising. In particular, ZnMgSSe, which is a quaternary II-VI group compound semiconductor, has a larger bandgap and a lower refractive index than ZnSe and ZnSSe. Therefore, a semiconductor laser capable of emitting blue or green light in the wavelength range of 400 to 550 nm is used. It is suitable as a material for the cladding layer when it is manufactured using a GaAs substrate, and can obtain good carrier confinement characteristics and optical confinement characteristics (Elec
tronics Letters 28 (1992) 1798). And this ZnM
As a result of various improvements made to the semiconductor laser using the gSSe layer as the cladding layer, ZnCdSe / ZnSSe / ZnMgSS in which the ZnCdSe layer is the active layer, the ZnSSe layer is the optical waveguide layer, and the ZnMgSSe layer is the cladding layer.
e SCH (Separate Confinement Heterostructure)
Room temperature continuous oscillation has been achieved in a semiconductor laser having a structure (Electronics Letters 29 (1993) 1488).

FIG. 8 shows an example of a conventional semiconductor laser of this type.

As shown in FIG. 8, in this conventional semiconductor laser, for example, n-type GaA having a (100) plane orientation is used.
On the s substrate 101, n-type GaAs buffer layers 102, n
Type ZnSe buffer layer 103, n type ZnSSe buffer layer 104, n type ZnMgSSe cladding layer 105, n type ZnSSe optical waveguide layer 106, ZnCdSe active layer 10
7, p-type ZnSSe optical waveguide layer 108, p-type ZnMgSS
e clad layer 109, p-type ZnSSe layer 110, p-type Z
nSe contact layer 111, p-type ZnSe / ZnTe multiple quantum well (MQW) layer 11 in which barrier layers made of p-type ZnSe and well layers made of p-type ZnTe are alternately stacked.
2 and a p-type ZnTe contact layer 113 are sequentially stacked.

In this case, the upper layer portion of the p-type ZnSSe layer 110, the p-type ZnSe contact layer 111, and the p-type ZnSe /
The ZnTe MQW layer 112 and the p-type ZnTe contact layer 113 have stripe shapes extending in one direction.

The p-type ZnS in the portion other than the stripe portion
An insulating layer 114 made of, for example, an Al ₂ O ₃ film is formed on the Se layer 110. Then, the p-side electrode 115 is formed on the stripe-shaped p-type ZnTe contact layer 113 and the insulating layer 114. This p-side electrode 11
5 has an ohmic contact with the p-type ZnTe contact layer 113, and this portion serves as a current path. Here, as the p-side electrode 115, for example, a Pd film and P
Pd / Pt / Au having a structure in which a t film and an Au film are sequentially stacked.
Electrodes are used. On the other hand, an n-side electrode 116 such as an In electrode is in ohmic contact with the back surface of the n-type GaAs substrate 101.

[0008]

However, in the above-mentioned conventional semiconductor laser, since the lattice constant of the ZnCdSe active layer 107 is different from that of the n-type GaAs substrate 101, the ZnCdSe active layer 107 is inevitably contained in the ZnCdSe active layer 107. Distortion exists. This ZnCdSe active layer 1
It has been confirmed that the strain in 07 is related to the increase of the non-emission center when the semiconductor laser is energized, and this increase of the non-emission center is one cause that limits the life of the semiconductor laser.

Further, even when a semiconductor light emitting device capable of emitting multiple colors is manufactured on the same substrate, since the materials used are changed depending on each color, the semiconductor capable of emitting multiple colors having high reliability. It has been difficult to realize a light emitting device.

Therefore, according to the present invention, since there is almost no strain in the II-VI group compound semiconductor layer constituting the light emitting device structure, the II-V has a long life and high reliability.
An object is to provide a semiconductor light emitting device using a group I compound semiconductor.

Another object of the present invention is that the II-VI compound semiconductor layer constituting the light emitting device structure has almost no strain, so that the II-VI has a long life and high reliability.
It is an object of the present invention to provide a semiconductor light emitting device using a group compound semiconductor capable of emitting multicolor light.

[0012]

In order to achieve the above object, a semiconductor light emitting device according to the first invention of the present invention comprises a semiconductor substrate and an In _x Ga _y Al _1-xy A on the semiconductor substrate.
s layer (where 0 <x ≦ 1 and 0 ≦ y <1 and x + y ≦
And 1), In _x Ga _y Al on _1-xy As layer, Zn, M
A light emitting device structure comprising at least one group II element selected from the group consisting of g, Cd, Hg and Be and at least one group VI element selected from the group consisting of Se, S and Te And a plurality of II-VI group compound semiconductor layers.

[0013] _{Here, In x Ga y Al 1-} xy As layer (where, 0 <x ≦ 1 and 0 ≦ y <1 and x + y ≦ 1)
If the range is schematically shown, it becomes the shaded area in FIG.

In the first aspect of the present invention, II-
VI compound semiconductor _{layer, In x Ga y Al 1-} xy As
It is almost lattice-matched with the layers.

In the first aspect of the present invention, the strain of each II-VI compound semiconductor layer is preferably ±±.
Within 1%, and the total strain of the plurality of II-VI group compound semiconductor layers is within ± 1%, and more preferably,
The strain of each II-VI group compound semiconductor layer is ± 0.
It is within 7%, and the total strain of the plurality of II-VI group compound semiconductor layers is within ± 0.7%.

[0016] Here, the distortion of the respective Group II-VI compound semiconductor layer, an In _x Ga _y for Al _1-xy As layer bulk lattice constant of the bulk lattice constant of the II-VI compound semiconductor layer and _{In x Ga y Al 1-xy} as
It is the ratio of the difference from the lattice constant of the bulk of the layer. That is,
_{In x Ga y Al 1-xy} As the bulk lattice constant of the layer a, When a'bulk lattice constant of the II-VI compound semiconductor layer, the table this distortion and (a'-a) / a To be done.

In the first invention of the present invention, In _x G
The a _y Al _1-xy As layer is typically In _x Ga _1-x.
As layer (where 0 <x ≦ 1) or In _y Al _1-y A
The s layer (where 0 ≦ x ≦ 1).

In the first invention of the present invention, the semiconductor substrate is, for example, a GaAs substrate, an InP substrate, or an InGaA substrate.
For example, sP substrate.

In the first aspect of the present invention, In _x
When the Ga _y Al _1-xy As layer is an In _x Ga _1-x As layer, the semiconductor substrate is a GaAs substrate, and a lattice mismatch exists between the In _x Ga _1-x As layer and the GaAs substrate, for example, the in _x Ga _1-x As layer of the in composition ratio x, in _x
From 0 at the interface between the Ga _1-x As layer and the GaAs substrate, In _x Ga _1-x In at the interface between the As layer and the group II-VI compound semiconductor layer _x Ga _1-x As layers and II-VI
The value is monotonically increased to a value at which the group compound semiconductor layer is substantially lattice-matched.

In the first invention of the present invention, In _x
When the Ga _y Al _1-xy As layer is an In _x Ga _1-x As layer, the semiconductor substrate is a GaAs substrate, and a lattice mismatch exists between the In _x Ga _1-x As layer and the GaAs substrate, For example, the In _x Ga _1-x As layer is formed from the GaAs substrate II
InG which is composed of a plurality of InGaAs layers whose In composition ratio discretely and monotonically increases toward the -VI group compound semiconductor layer and which is in contact with the II-VI group compound semiconductor layer
The aAs layer has an In composition ratio that is substantially lattice-matched with the II-VI group compound semiconductor layer.

In the first invention of this invention, for example,
For example, In_xGa_yAl_1-xyAs layer is In_yAl_1-yA
s layer, the semiconductor substrate is a GaAs substrate, In_yAl
_1-yLattice mismatch exists between As layer and GaAs substrate
In_yAl_1-yThe In composition ratio y of the As layer is set to I
n_yAl_1-y0 at the interface between As layer and GaAs substrate
From In_yAl_1-yAs layer and II-VI compound semiconductor
In at the interface with the body layer _yAl_1-yAs layer and II-V
Monotonically to a value where the lattice match with the group I compound semiconductor layer
increase.

In the first aspect of the present invention, In _x
When the Ga _y Al _1-xy As layer is an In _y Al _1-y As layer, the semiconductor substrate is a GaAs substrate, and a lattice mismatch exists between the In _y Al _1-y As layer and the GaAs substrate, For example, the In _y Al _1-y As layer is formed from a GaAs substrate by II
InA that is composed of a plurality of InAlAs layers whose In composition ratio discretely and monotonically increases toward the -VI group compound semiconductor layer and is in contact with the II-VI group compound semiconductor layer.
The 1As layer has an In composition ratio that is substantially lattice-matched with the II-VI group compound semiconductor layer.

In the first aspect of the present invention, the plurality of II-VI group compound semiconductor layers are, for example, the first conductivity type ZnMgCdSe cladding layer, the active layer, and the second conductivity type Z.
and an nMgCdSe cladding layer.

According to a second aspect of the present invention, there is provided a semiconductor light emitting device comprising a semiconductor substrate and In _x Ga _y Al on the semiconductor substrate.
_1-xy As layer (where, 0 <x ≦ 1 and 0 ≦ y <1 and x + y ≦ 1) _{and, In x Ga y Al 1-} xy As the layer of
At least one group II element selected from the group consisting of Zn, Mg, Cd, Hg and Be, and at least one VI selected from the group consisting of Se, S and Te.
On a plurality of first II-VI group compound semiconductor layers, which are composed of a group element and constitute a first light-emitting element structure capable of emitting light in a first color, and on a plurality of first II-VI group compound semiconductor layers Of at least one group II element selected from the group consisting of Zn, Mg, Cd, Hg and Be, and at least one group VI element selected from the group consisting of Se, S and Te, A plurality of second II-VI group compound semiconductor layers constituting the second light emitting element structure capable of emitting light of two colors, and Zn, Mg, Cd on the plurality of second II-VI group compound semiconductor layers Se, S and at least one group II element selected from the group consisting of, Hg and Be
And a plurality of third II-VI group compound semiconductor layers, which are composed of at least one or more VI group elements selected from the group consisting of Te and Te, and which constitute a third light emitting device structure capable of emitting light in a third color, It is characterized by having.

In the second aspect of the present invention, a plurality of first II-VI compound semiconductor layers and a plurality of second II-VI compounds are provided.
VI compound semiconductor layers and a plurality of third II-VI compound semiconductor layer is almost lattice matched with _{In x Ga y Al 1-xy} As layer.

In the second aspect of the present invention, preferably, the strain of each of the first II-VI group compound semiconductor layers is within ± 1%, and a plurality of first II-VI are included.
The total strain of the group compound semiconductor layer is within 1%, and the strain of each of the second II-VI group compound semiconductor layers is ± 1.
%, And the total strain of the plurality of second II-VI compound semiconductor layers is within 1%, and the strain of each third II-VI compound semiconductor layer is within ± 1%. Yes, and the total strain of the plurality of third II-VI compound semiconductor layers is within ± 1%. More preferably, the first
The strain of the II-VI group compound semiconductor layer is within ± 0.7%, and the strain of the plurality of first II-VI group compound semiconductor layers is within ± 0.7%, and The strain of the second II-VI compound semiconductor layer is within ± 0.7%, and the total strain of the plurality of second II-VI compound semiconductor layers is within ± 0.7%, The strain of each third II-VI group compound semiconductor layer is ± 0.7%.
And the total strain of the plurality of third II-VI group compound semiconductor layers is ± 0.7% or less.

In the second invention of the present invention, the first color, the second color and the third color are, for example, red, green and blue.

Except for the above, the second invention of the present invention is the same as the first invention of the present invention.

For reference, a representative binary II-VI
FIG. 2 shows the relationship between the lattice constant and band gap energy of group III compound semiconductors and group III-V compound semiconductors.

According to the first aspect of the present invention configured as described above, the composition ratio of the In _x Ga _y Al _1-xy As layer is appropriately selected according to the II-VI group compound semiconductor layer used. the group II-VI compound semiconductor layer _{in x Ga y Al 1-xy} as layer and can be substantially lattice-matched by the distortion is almost the group II-VI compound semiconductor layer Therefore including an active layer It can be nonexistent. This can reduce the generation of non-radiative centers near the active layer when the semiconductor light emitting element is energized, and suppress the deterioration of the semiconductor light emitting element. In addition, light emission in the red to ultraviolet region is possible by selecting the material and composition ratio of the active layer.

According to the second invention of the present invention configured as described above, the first II-VI compound semiconductor layer, the second II-VI compound semiconductor layer and the third II- which are used. In _x Ga _y Al depending on the group VI compound semiconductor layer
By appropriately selecting the composition ratio of the _1-xy As layer, the first II-VI group compound semiconductor layer and the second II-VI compound semiconductor layer are formed.
VI compound semiconductor layer and the third II-VI compound semiconductor layer can be substantially lattice matched with the _{In x Ga y Al 1-xy} As layer, such that their respectively including the active layer and the first II- Group VI compound semiconductor layer, second II
Almost no strain can be present in the —VI compound semiconductor layer and the third II-VI compound semiconductor layer. This can reduce the generation of non-radiative centers near the respective active layers during energization of the first light emitting device structure, the second light emitting device structure, and the third light emitting device structure in the semiconductor light emitting device. It is possible to suppress the deterioration of the structure of the light emitting element. Also,
The first light emitting element structure, the second light emitting element structure, and the third light emitting element structure can emit light of the first color, the second color, and the third color, respectively, so that multicolor light emission is possible. is there.

[0032]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 3 is a sectional view showing a semiconductor laser according to the first embodiment of the present invention. In this semiconductor laser, a Zn _0.75 Cd _0.25 Se active layer is used, and
An emission wavelength (green) of 4 nm ± 15 nm is obtained.

As shown in FIG. 3, in the semiconductor laser according to the first embodiment, an n-type G having, for example, a (100) plane orientation doped with Si as an n-type impurity is used.
On the aAs substrate 1, for example, an n-type GaAs buffer layer 2 doped with Si as an n-type impurity, an n-type In _0.05 Ga _0.95 As layer 3 similarly doped with Si as an n-type impurity, and an n-type impurity similarly. N-type I doped with Si
n _0.1 Ga _0.9 As layer 4, Si as an n-type impurity
N-type In _0.15 Ga _0.85 As layer 5 doped with Si, and n-type In _0.2 Ga similarly doped with Si as an n-type impurity
_0.8 As layer 6, n-type In _0.25 Ga _0.75 As layer 7 similarly doped with Si as n-type impurity, n-type In _0.3 Ga _0.7 As layer 8 similarly doped with Si as n-type impurity, n-type impurity For example, n-type Z doped with Cl
n _0.68 Mg _0.2 Cd _0.12 Se clad layer 9, Zn _0.75 C
As the d _0.25 Se active layer 10 and p-type impurities, for example, N
A p-type Zn _0.68 Mg _0.2 Cd _0.12 Se cladding layer 11 doped with is sequentially laminated.

Here, as an example of the thickness of these layers, the n-type GaAs buffer layer 2 has a thickness of 30 nm, and the n-type In
_0.05 Ga _0.95 As layer 3, n-type In _0.1 Ga _0.9 As layer 4, n-type In _0.15 Ga _0.85 As layer 5, n-type In _0.2 Ga
_{The 0.8} As layer 6 and the n-type In _0.25 Ga _0.75 As layer 7 each have a thickness of 1 μm, and the n-type In _0.3 Ga _0.7 As layer 8 has a thickness of 3 μm.
m, n-type Zn _0.68 Mg _0.2 Cd _0.12 Se clad layer 9 and p-type Zn _0.68 Mg _0.2 Cd _0.12 Se clad layer 11
Is 2 μm and the Zn _0.75 Cd _0.25 Se active layer 10 is 0.2 μm.

In this case, n-type Zn _0.68 Mg _0.2 Cd _0.12
Se clad layer 9, Zn _0.75 Cd _0.25 Se active layer 10 and p-type Zn _0.68 Mg _0.2 Cd _0.12 Se clad layer 11
The n-type Zn _0.68 Mg _0.2 Cd _0.12 Se cladding layer 9, Zn _0.75
Cd _0.25 Se active layer 10 and p-type Zn _0.68 Mg _0.2 C
The d _0.12 Se clad layer 11 has an underlying n-type In _0.3
It is almost completely lattice-matched with the Ga _0.7 As layer 8. Further, there is a lattice mismatch between the n-type GaAs substrate 1 and the n-type GaAs buffer layer 2 and the n-type In _0.3 Ga _0.7 As layer 8, but this lattice mismatch is caused by the n-type Ga.
As substrate 1, n-type GaAs buffer layer 2, and n-type In
_The n-type In _0.05 Ga _0.95 As layer 3, the n-type In _0.1 Ga _0.9 As layer 4, and the n-type In _0.15 Ga in which the In composition ratio is discretely increased by 0.05 with respect to the _0.3 Ga _0.7 As layer 8
_0.85 As layer 5, n-type In _0.2 Ga _0.8 As layer 6 and n
The type In _0.25 Ga _0.75 As layer 7 is inserted, so that it is largely relaxed.

On the p-type Zn _0.68 Mg _0.2 Cd _0.12 Se clad layer 11, an insulating layer 12 having a stripe-shaped opening 12a extending in one direction is laminated. The insulating layer 12 is formed of, for example, an Al ₂ O ₃ film. Then, through the opening 12a of the insulating layer 12, p-type Zn _0.68
A p-side electrode 13 is provided in ohmic contact with the Mg _0.2 Cd _0.12 Se clad layer 11 and extends on the insulating layer 12. The width of this opening 12a is, for example, 10 μm.
It is a degree. Here, as the p-side electrode 13, for example, a Pd / Pt / Au electrode having a structure in which a Pd film having a thickness of about 10 nm, for example, an Au film having a thickness of about 100 nm and an Au film having a thickness of, for example, about 300 nm are sequentially stacked is used. To be On the other hand, an n-side electrode 14 such as an In electrode is provided on the back surface of the n-type GaAs substrate 1 and makes ohmic contact.

Next, a method of manufacturing the semiconductor laser according to the first embodiment constructed as described above will be described.

That is, in order to manufacture the semiconductor laser according to the first embodiment, first, for example, III-
As shown in FIG. 3, by the MBE method or MOCVD method using a molecular beam epitaxy (MBE) apparatus for a Group V compound semiconductor or a metal organic chemical vapor deposition (MOCVD) apparatus, as shown in FIG.
N-type GaAs buffer layer 2, n-type
Type In _0.05 Ga _0.95 As layer 3, n-type In _0.1 Ga _0.9 A
s layer 4, n-type In _0.15 Ga _0.85 As layer 5, n-type In _0.2
The Ga _0.8 As layer 6, the n-type In _0.25 Ga _0.75 As layer 7, and the n-type In _0.3 Ga _0.7 As layer 8 are sequentially grown.

Next, in this way, n-type In _0.3 Ga is obtained.
_The n-type GaAs substrate 1 on which the growth of the _0.7 As layer 8 has been completed is used as an MBE device or MOC for a III-V group compound semiconductor.
Vacuum transfer from the VD device to the growth chamber of the MBE device for II-VI compound semiconductors. Then, in this growth chamber, the n-type In _0.3 Ga _0.7 As layer 8 is formed by the MBE method.
On top, n-type Zn _0.68 Mg _0.2 Cd _0.12 Se clad layer 9, Zn _0.75 Cd _0.25 Se active layer 10 and p-type Zn
_0.68 Mg _0.2 Cd _0.12 Se clad layer 11 is sequentially grown.

In the growth of the II-VI group compound semiconductor layer by the MBE method, for example, Zn as a Zn source is used.
And Mg as the Mg raw material and S as the Se raw material.
e is used, and Cd is used as a Cd raw material. Also, n-type Z
Doping with Cl as an n-type impurity of the n _0.68 Mg _0.2 Cd _0.12 Se cladding layer 9 is performed by using ZnCl ₂ as a dopant, for example. Furthermore, p-type Zn _0.68 Mg
The doping of N as a p-type impurity in the _0.2 Cd _0.12 Se cladding layer 11 generates N ₂ plasma using a radio frequency (RF) or electron cyclotron resonance (ECR) plasma cell, and uses active N generated thereby. Do it.

Next, p-type Zn _0.68 Mg _0.2 Cd _0.12 Se
After forming a stripe-shaped resist pattern (not shown) having a predetermined shape on the clad layer 11, an Al ₂ O ₃ film is formed on the entire surface by, for example, a vacuum vapor deposition method, and the resist pattern is formed thereon. Removed together with the Al ₂ O ₃ film (lift-off). As a result, the insulating layer 12 having the stripe-shaped openings 12a is formed.

Next, a Pd film, a Pt film, and an Au film are sequentially formed on the entire surface by a vacuum evaporation method to form a p-side electrode 13 made of a Pd / Pt / Au electrode, and then heat-treated as necessary. , P-type Zn _0.68 Mg
Ohmic contact is made with _0.2 Cd _0.12 Se cladding layer 11. On the other hand, on the back surface of the n-type GaAs substrate 1, In
An n-side electrode 14 composed of an electrode is formed and ohmic contact is made.

Next, the n-type GaAs substrate 1 having the laser structure formed as described above is cleaved in a bar shape to form both resonator end faces, and then end face coating is performed by a vacuum deposition method or the like. After this, the bar is cleaved to form a chip, and the laser chip thus obtained is packaged.

As described above, according to the semiconductor laser of the first embodiment, the n-type Zn _0.68 Mg _0.2 Cd _0.12 Se cladding layer 9 and Zn _0.75 constituting the laser structure are formed.
Cd _0.25 Se active layer 10 and p-type Zn _0.68 Mg _0.2 C
d _0.12 Se clad layer 11 is an underlying n-type In _0.3 G
The n-type Zn _0.68 Mg _0.2 Cd _0.12 Se clad layer 9 and Z are almost completely lattice-matched with the a _0.7 As layer 8.
n _0.75 Cd _0.25 Se active layer 10 and p-type Zn _0.68 Mg
There is almost no strain in the _0.2 Cd _0.12 Se clad layer 11. Thus, in particular Zn _{by 0.75} Cd _0.25 not strain is almost present in the Se active layer 10, it is possible to reduce the generation of non-luminescent centers in Zn _0.75 Cd _0.25 Se active layer 10 near the time of power supply to the semiconductor laser, It is possible to suppress the deterioration of the semiconductor laser. This makes it possible to realize a green-emitting semiconductor laser having a long life and high reliability.

FIG. 4 shows a semiconductor laser according to the second embodiment of the present invention. In this semiconductor laser,
Zn _0.25 Mg _0.5 Cd _0.25 Se active layer is used, 443n
An emission wavelength (blue) of m ± 15 nm is obtained.

As shown in FIG. 4, in the semiconductor laser according to the second embodiment, an n-type I having, for example, a (100) plane orientation doped with Si as an n-type impurity is used.
On the nP substrate 21, an n-type In _0.53 Ga _0.47 As layer 22 doped with Si as an n-type impurity, and an n-type Zn _0.18 Mg _0.68 doped with Cl as an n-type impurity, for example.
Cd _0.14 Se clad layer 23, Zn _0.25 Mg _0.5 Cd
_{A 0.25} Se active layer 24 and a p-type Zn _0.18 Mg _0.68 Cd _0.14 Se clad layer 25 doped with N as a p-type impurity, for example, are sequentially stacked.

Here, as an example of the thicknesses of these layers, the n-type In _0.53 Ga _0.47 As layer 22 has a thickness of 1 μm, and the n-type Z has a thickness of 1 μm.
The n _0.18 Mg _0.68 Cd _0.14 Se clad layer 23 and the p-type Zn _0.18 Mg _0.68 Cd _0.14 Se clad layer 25 are 2 μm, and the Zn _0.25 Mg _0.5 Cd _0.25 Se active layer 24 is 0.2 μm.

In this case, the n-type Z forming the laser structure
n _0.18 Mg _0.68 Cd _0.14 Se cladding layer 23, Zn _0.25
Mg _0.5 Cd _0.25 Se active layer 24 and p-type Zn _0.18 M
The g _0.68 Cd _0.14 Se cladding layer 25 is almost completely lattice-matched with the underlying n-type In _0.53 Ga _0.47 As layer 22. The n-type In _0.53 Ga _0.47 As layer 22 has n
It is almost completely lattice-matched with the InP substrate 21.

On the p-type Zn _0.18 Mg _0.68 Cd _0.14 Se clad layer 25, an insulating layer 26 having a stripe-shaped opening 26a extending in one direction is laminated. The insulating layer 26 is formed of, for example, an Al ₂ O ₃ film. Then, p-type Zn _{0.18 is formed} through the opening 26a of the insulating layer 26.
A p-side electrode 27 is provided in ohmic contact with the Mg _0.68 Cd _0.14 Se clad layer 25 and extends on the insulating layer 26. The width of this opening 26a is, for example, 10 μm.
It is a degree. Here, as the p-side electrode 27, for example, a Pd / Pt / Au electrode having a structure in which a Pd film having a thickness of approximately 10 nm, for example, an Au film having a thickness of approximately 100 nm and an Au film having a thickness of approximately 300 nm are sequentially stacked is used. To be On the other hand, on the back surface of the n-type InP substrate 21, an n-side electrode 28 such as an In electrode is provided and is in ohmic contact.

The method of manufacturing the semiconductor laser according to the second embodiment is the same as that of the semiconductor laser according to the first embodiment, and the description thereof will be omitted.

As described above, according to the semiconductor laser of the second embodiment, the n-type Zn _0.18 Mg _0.68 Cd _0.14 Se clad layer 23 and Zn constituting the laser structure are formed.
_0.25 Mg _0.5 Cd _0.25 Se active layer 24 and p-type Zn
_{The 0.18} Mg _0.68 Cd _0.14 Se cladding layer 25 is almost completely lattice-matched with the underlying n-type In _0.53 Ga _0.47 As layer 22, and these n-type Zn _0.18 Mg _0.68 Cd _0.14 Se layers are formed.
Almost no strain exists in the clad layer 23, the Zn _0.25 Mg _0.5 Cd _0.25 Se active layer 24, and the p-type Zn _0.18 Mg _0.68 Cd _0.14 Se clad layer 25. Therefore, in particular by the distortion hardly exists in Zn _0.25 Mg _0.5 Cd _0.25 Se active layer 24, reducing the generation of non-luminescent centers in Zn _0.25 Mg _0.5 Cd _0.25 Se active layer 24 near the time of energization of the semiconductor laser It is possible,
It is possible to suppress the deterioration of the semiconductor laser. This makes it possible to realize a blue-emitting semiconductor laser with a long life and high reliability.

FIG. 5 shows a semiconductor laser according to the third embodiment of the present invention. In this semiconductor laser,
Zn _0.35 Mg _0.28 Cd _0.37 Se using active layer, 504n
An emission wavelength (green) of m ± 15 nm is obtained.

As shown in FIG. 5, in the semiconductor laser according to the third embodiment, an n-type I having, for example, a (100) plane orientation doped with Si as an n-type impurity is used.
On the nP substrate 31, an n-type In _0.53 Ga _0.47 As layer 32 doped with Si as an n-type impurity, and an n-type Zn _0.25 Mg _0.5 doped with Cl as an n-type impurity, for example.
Cd _0.25 Se clad layer 33, Zn _0.35 Mg _0.28 Cd
_{A 0.37} Se active layer 34 and a p-type Zn _0.25 Mg _0.5 Cd _0.25 Se clad layer 35 doped with N as a p-type impurity, for example, are sequentially stacked.

An example of the thickness of these layers will be given here.
And n-type In_0.53Ga_0.47As layer 32 is 1 μm, n-type Z
n_0.25Mg_0.5Cd_0.25Se clad layer 33 and p-type
Zn _0.25Mg_0.5Cd_0.25The Se clad layer 35 is each
2 μm, Zn_0.35Mg_0.28Cd_0.37The Se active layer 34 is
It is 0.2 μm.

In this case, the n-type Z constituting the laser structure
n _0.25 Mg _0.5 Cd _0.25 Se clad layer 33, Zn _0.35
Mg _0.28 Cd _0.37 Se active layer 34 and p-type Zn _0.25 M
The g _0.5 Cd _0.25 Se cladding layer 35 is almost completely lattice-matched with the underlying n-type In _0.53 Ga _0.47 As layer 32. In addition, the n-type In _0.53 Ga _0.47 As layer 32 has n
It is almost completely lattice-matched with the InP substrate 31.

On the p-type Zn _0.25 Mg _0.5 Cd _0.25 Se clad layer 35, an insulating layer 36 having a stripe-shaped opening 36a extending in one direction is laminated. The insulating layer 36 is formed of, for example, an Al ₂ O ₃ film. Then, through the opening 36a of the insulating layer 36, p-type Zn _0.25
A p-side electrode 37 is provided in ohmic contact with the Mg _0.5 Cd _0.25 Se cladding layer 35 and extends on the insulating layer 36. The width of the opening 36a is, for example, 10 μm.
It is a degree. Here, as the p-side electrode 37, for example, a Pd / Pt / Au electrode having a structure in which a Pd film having a thickness of approximately 10 nm, for example, an Au film having a thickness of approximately 100 nm and an Au film having a thickness of approximately 300 nm are sequentially stacked is used. To be On the other hand, on the back surface of the n-type InP substrate 31, an n-side electrode 38 such as an In electrode is provided and makes ohmic contact.

The method of manufacturing the semiconductor laser according to the third embodiment is the same as that of the semiconductor laser according to the first embodiment, and the description thereof will be omitted.

As described above, according to the semiconductor laser of the third embodiment, the n-type Zn _0.25 Mg _0.5 Cd _0.25 Se cladding layer 33, Zn constituting the laser structure is formed.
_0.35 Mg _0.28 Cd _0.37 Se Active layer 34 and p-type Zn
_{The 0.25} Mg _0.5 Cd _0.25 Se cladding layer 35 is almost completely lattice-matched with the underlying n-type In _0.53 Ga _0.47 As layer 32, and these n-type Zn _0.25 Mg _0.5 Cd _0.25 Se layers are formed.
Almost no strain exists in the clad layer 33, Zn _0.35 Mg _0.28 Cd _0.37 Se active layer 34 and p-type Zn _0.25 Mg _0.5 Cd _0.25 Se clad layer 35. Therefore, in particular by not strain is almost present in the Zn _0.35 Mg _0.28 Cd _0.37 Se active layer 34, reducing the generation of non-luminescent centers in Zn _0.35 Mg _0.28 Cd _0.37 Se active layer near 34 during energization to the semiconductor laser It is possible,
It is possible to suppress the deterioration of the semiconductor laser. This makes it possible to realize a green-emitting semiconductor laser having a long life and high reliability.

FIG. 6 shows a semiconductor laser according to the fourth embodiment of the present invention. In this semiconductor laser,
Zn _0.48 Cd _0.52 Se active layer was used, 608 nm ± 15
The emission wavelength (nm) of nm is obtained.

As shown in FIG. 6, in the semiconductor laser according to the fourth embodiment, an n-type I having, for example, a (100) plane orientation doped with Si as an n-type impurity is used.
On the nP substrate 41, an n-type In _0.53 Ga _0.47 As layer 42 doped with Si as an n-type impurity, and an n-type Zn _0.35 Mg _0.28 doped with Cl as an n-type impurity, for example.
A Cd _0.37 Se clad layer 43, a Zn _0.48 Cd _0.52 Se active layer 44, and a p-type Zn _0.35 Mg _0.28 Cd _0.37 Se clad layer 45 doped with N as a p-type impurity, for example, are sequentially laminated.

Here, as an example of the thickness of these layers, the n-type In _0.53 Ga _0.47 As layer 42 has a thickness of 1 μm, and the n-type Z has a thickness of 1 μm.
The n _0.35 Mg _0.28 Cd _0.37 Se clad layer 43 and the p-type Zn _0.35 Mg _0.28 Cd _0.37 Se clad layer 45 are 2 μm, and the Zn _0.48 Cd _0.52 Se active layer 44 is 0.2 μm.
m.

In this case, the n-type Z constituting the laser structure
n _0.35 Mg _0.28 Cd _0.37 Se clad layer 43, Zn _0.48
Cd _0.52 Se active layer 44 and p-type Zn _0.35 Mg _0.28 C
The d _0.37 Se clad layer 45 is an underlayer of n-type In _0.53
It is almost completely lattice-matched with the Ga _0.47 As layer 42. Further, the n-type In _0.53 Ga _0.47 As layer 42 is formed of
It is almost completely lattice-matched with the substrate 41.

On the p-type Zn _0.35 Mg _0.28 Cd _0.37 Se clad layer 45, an insulating layer 46 having a stripe-shaped opening 46a extending in one direction is laminated. The insulating layer 46 is formed of, for example, an Al ₂ O ₃ film. Then, through the opening 46a of the insulating layer 46, p-type Zn _0.35
A p-side electrode 47 is provided in ohmic contact with the Mg _0.28 Cd _0.37 Se clad layer 45 and extends on the insulating layer 46. The width of this opening 46a is, for example, 10 μm.
It is a degree. Here, as the p-side electrode 47, for example, a Pd / Pt / Au electrode having a structure in which a Pd film having a thickness of about 10 nm, for example, an Au film having a thickness of about 100 nm and an Au film having a thickness of, for example, about 300 nm are sequentially stacked is used. To be On the other hand, on the back surface of the n-type InP substrate 41, an n-side electrode 48 such as an In electrode is provided and makes ohmic contact.

The method of manufacturing the semiconductor laser according to the fourth embodiment is the same as that of the semiconductor laser according to the first embodiment, and the description thereof will be omitted.

As described above, according to the semiconductor laser of the fourth embodiment, the n-type Zn _0.35 Mg _0.28 Cd _0.37 Se clad layer 43, Zn constituting the laser structure are formed.
_0.48 Cd _0.52 Se active layer 44 and p-type Zn _0.35 Mg
_{The 0.28} Cd _0.37 Se clad layer 45 is an underlying n-type In
The n-type Zn _0.35 Mg _0.28 Cd _0.37 Se clad layer 43, the Zn _0.48 Cd _0.52 Se active layer 44 and the p-type Zn _0.35 Mg _0.28 Cd _0.37 Se clad are almost completely lattice-matched with the _0.53 Ga _0.47 As layer 42. There is almost no strain in layer 45. Therefore, especially Zn _0.48 Cd
_Since there is almost no strain in the _0.52 Se active layer 44, Zn _0.48 Cd during energization of the semiconductor laser is obtained.
The generation of non-radiative centers near the _0.52 Se active layer 44 can be reduced, and the deterioration of the semiconductor laser can be suppressed. This makes it possible to realize a red-emitting semiconductor laser having a long life and high reliability.

FIG. 7 shows a multicolor light emitting semiconductor laser according to the fifth embodiment of the present invention. This multicolor light emitting semiconductor laser is one in which three types of semiconductor lasers capable of emitting red, green and blue light are integrated on the same substrate.

As shown in FIG. 7, in the multicolor light emitting semiconductor laser according to the fifth embodiment, an n-type InP substrate 51 having, for example, a (100) orientation and doped with Si as an n-type impurity, A semiconductor laser capable of emitting red light (emission wavelength is 608 nm ± 15 nm) similar to the semiconductor laser according to the fourth embodiment, and a semiconductor laser capable of emitting green light (emission wavelength is 504 nm ± 15 nm) similar to the semiconductor laser according to the third embodiment. ), And the second
A semiconductor laser capable of emitting blue light similar to the semiconductor laser according to the embodiment (emission wavelength is 443 nm ± 15 nm)
Are sequentially laminated.

That is, n-type In _0.53 G doped with, for example, Si as an n-type impurity on the n-type InP substrate 51.
a _0.47 As layer 52, n-type Zn _0.35 Mg _0.28 Cd _0.37 Se clad layer 53 doped with, for example, Cl as n-type impurities, Zn _0.48 Cd _0.52 Se active layer 54 and p-type doped with, for example, N as p-type impurities Zn _0.35 Mg _0.28
Cd _0.37 Se clad layer 55 is sequentially laminated. These layers are the n-type In _0.53 Ga _0.47 As layer 42 and the n-type Zn _0.35 constituting the semiconductor laser according to the fourth embodiment.
Mg _0.28 Cd _0.37 Se cladding layer 43, Zn _0.48 Cd
_0.52 Se active layer 44 and p-type Zn _0.35 Mg _0.28 Cd
_It is similar to the _0.37 Se clad layer 45, and their thickness is also similar. And these n-type Zn _0.35 Mg
_0.28 Cd _0.37 Se cladding layer 53, Zn _0.48 Cd _0.52 S
e Active layer 54 and p-type Zn _0.35 Mg _0.28 Cd _0.37 Se
The clad layer 55 constitutes a semiconductor laser capable of emitting red light similar to the semiconductor laser according to the fourth embodiment.

On the p-type Zn _0.35 Mg _0.28 Cd _0.37 Se clad layer 55, p of this semiconductor laser capable of emitting red light is formed.
The side electrode 56 is provided in ohmic contact. As the p-side electrode 56, for example, Pd / Pt / A
u electrodes are used. Further, on the back surface of the n-type InP substrate 51, the n-side electrode 57 of the semiconductor laser capable of emitting red light.
Are provided in ohmic contact. An In electrode, for example, is used as the n-side electrode 57.

On the p-type Zn _0.35 Mg _0.28 Cd _0.37 Se clad layer 55, p-type Zn _0.25 Mg _0.5 Cd _0.25 Se clad layer 5 doped with, for example, N as a p-type impurity.
8, Zn _0.35 Mg _0.28 Cd _0.37 Se active layer 59 and n
N-type Zn _0.25 doped with Cl as a type impurity
The Mg _0.5 Cd _0.25 Se clad layer 60 is sequentially laminated. These layers are the n-type Zn _0.25 Mg _0.5 Cd _0.25 Se clad layer 33 and the Zn _0.35 Mg _0.28 Cd _0.37 Se active layer 34 which constitute the semiconductor laser according to the third embodiment.
And p-type Zn _0.25 Mg _0.5 Cd _0.25 Se clad layer 3
5 as well as their thickness. Then, these p-type Zn _0.25 Mg _0.5 Cd _0.25 Se clad layer 58 and Zn _0.35 Mg _0.28 Cd _0.37 Se active layer 59 are formed.
And n-type Zn _0.25 Mg _0.5 Cd _0.25 Se clad layer 6
0 constitutes a semiconductor laser capable of emitting green light similar to the semiconductor laser according to the third embodiment.

On the n-type Zn _0.25 Mg _0.5 Cd _0.25 Se clad layer 60, n of this semiconductor laser capable of emitting green light is formed.
The side electrode 61 is provided in ohmic contact. The n-side electrode 61 is, for example, Ti / Pt / A
u electrodes are used. The p-side electrode 56 also serves as the p-side electrode of the semiconductor laser capable of emitting green light.

On the n-type Zn _0.25 Mg _0.5 Cd _0.25 Se clad layer 60, an n-type Zn _0.18 Mg _0.68 Cd _0.14 Se clad layer 62 and a Zn _0.25 Mg _0.5 Cd _0.25 Se active layer 6 are formed.
3 and a p-type Zn _0.18 Mg _0.68 Cd _0.14 Se clad layer 64 are sequentially laminated. These n-type Zn _0.18 Mg
_0.68 Cd _0.14 Se clad layer 62, Zn _0.25 Mg _0.5 C
d _0.25 Se active layer 63 and p-type Zn _0.18 Mg _0.68 Cd
_{The 0.14} Se clad layer 64 constitutes the n-type Zn _0.18 Mg _0.68 Cd _0.14 S constituting the semiconductor laser according to the second embodiment.
The e-clad layer 23, the Zn _0.25 Mg _0.5 Cd _0.25 Se active layer 24, and the p-type Zn _0.18 Mg _0.68 Cd _0.14 Se clad layer 25 are the same, and their thicknesses are also the same. And, these n-type Zn _0.18 Mg _0.68 Cd _0.14 S
The e cladding layer _{62, Zn 0.25 Mg 0.5 Cd 0.25} Se active layer 63 and the p-type Zn _0.18 Mg _{0. 68} Cd _0.14 Se cladding layer 64, the semiconductor laser and the same blue light-emitting semiconductor lasers capable is according to the second embodiment It is configured.

On the p-type Zn _0.18 Mg _0.68 Cd _0.14 Se clad layer 64, an insulating layer 65 having a stripe-shaped opening 65a extending in one direction is laminated. The insulating layer 65 is formed of, for example, an Al ₂ O ₃ film. Then, through the opening 65a of the insulating layer 65, p-type Zn _0.18
A p-side electrode 66 of a semiconductor laser capable of emitting blue light is provided in ohmic contact with the Mg _0.68 Cd _0.14 Se cladding layer 64 and extending on the insulating layer 65. The width of the opening 64a is, for example, about 10 μm. Here, as the p-side electrode 66, for example, a Pd / Pt / Au electrode is used. The n-side electrode 61 also serves as the n-side electrode of the semiconductor laser capable of emitting blue light.

In the fifth embodiment, n-type Zn _0.35 Mg _0.28 forming a semiconductor laser capable of emitting red light
The Cd _0.37 Se clad layer 53, the Zn _0.48 Cd _0.52 Se active layer 54, and the p-type Zn _0.35 Mg _0.28 Cd _0.37 Se clad layer 55 also constitute a p-type Zn _0.25 Mg _0.5 Cd _0.25 Se clad layer that constitutes a semiconductor laser capable of emitting green light. 58,
Zn _0.35 Mg _0.28 Cd _0.37 Se active layer 59 and p-type Z
The n _0.25 Mg _0.5 Cd _0.25 Se clad layer 60 also constitutes an n-type Zn _0.18 Mg constituting a semiconductor laser capable of emitting blue light.
_0.68 Cd _0.14 Se clad layer 62, Zn _0.25 Mg _0.5 C
d _0.25 Se active layer 63 and p-type Zn _0.18 Mg _0.68 Cd
_{The 0.14} Se clad layer 64 also has an n-type In underlayer.
_It is almost completely lattice-matched with the _0.53 Ga _0.47 As layer 52. The n-type In _0.53 Ga _0.47 As layer 52 is almost completely lattice-matched with the n-type InP substrate 51.

Next, a method of manufacturing the multicolor light emitting semiconductor laser according to the fifth embodiment having the above structure will be described.

That is, in order to manufacture the multicolor light emitting semiconductor laser according to the fifth embodiment, first, the n-type I
The n-type In _0.53 Ga _0.47 As layer 52 and the n-type Zn _0.35 M are formed on the nP substrate 51 by the same method as that of the first embodiment.
g _0.28 Cd _0.37 Se clad layer 53, Zn _0.48 Cd _0.52
Se active layer 54, p-type Zn _0.35 Mg _0.28 Cd _0.37 Se clad layer 55, p-type Zn _0.25 Mg _0.5 Cd _0.25 Se clad layer 58, Zn _0.35 Mg _0.28 Cd _0.37 Se active layer 5
9, n-type Zn _0.25 Mg _0.5 Cd _0.25 Se clad layer 6
0, n-type Zn _0.18 Mg _0.68 Cd _0.14 Se clad layer 6
2, Zn _0.25 Mg _0.5 Cd _0.25 Se active layer 63 and p
A type Zn _0.18 Mg _0.68 Cd _0.14 Se cladding layer 64 is sequentially grown.

Next, p-type Zn _0.18 Mg _0.68 Cd _0.14 Se
After forming a resist pattern (not shown) having a shape corresponding to the planar shape of the semiconductor laser capable of emitting blue light on the clad layer 64, the resist pattern is used as a mask by, for example, a reactive ion etching (RIE) method. p-type Zn _0.18 Mg _0.68 Cd _0.14 Se clad layer 6
4, Zn _0.25 Mg _0.5 Cd _0.25 Se active layer 63 and n
The type Zn _0.18 Mg _0.68 Cd _0.14 Se clad layer 62 is etched in a direction perpendicular to the substrate surface and patterned.

Next, after removing the resist pattern, the p-type Zn _0.18 Mg _0.68 Cd _0.14 Se clad layer 64 is formed.
And n-type Zn _0.25 Mg _0.5 Cd _0.25 Se clad layer 6
After forming a resist pattern (not shown) having a shape corresponding to the plane shape of the semiconductor laser capable of emitting green light on the substrate 0, the resist pattern is used as a mask, for example, RI.
By the E method, the n-type Zn _0.25 Mg _0.5 Cd _0.25 Se clad layer 60, the Zn _0.35 Mg _0.28 Cd _0.37 Se active layer 59, and the p-type Zn _0.25 Mg _0.5 Cd _0.25 Se clad layer 58.
Is etched in the direction perpendicular to the substrate surface to perform patterning.

Next, after removing the resist pattern, a resist pattern (not shown) in which a portion corresponding to the insulating layer 65 is opened is formed to cover the surface, and then Al ₂ O is formed on the entire surface by a vacuum deposition method. ₃ Form a film. After this,
Al ₂ O ₃ formed on this resist pattern
Remove with membrane. As a result, p-type Zn _0.18 Mg
_{On the 0.68} Cd _0.14 Se clad layer 64, an insulating layer 65 having a stripe-shaped opening 65a extending in one direction is formed.

Next, Pd /
The p-side electrode 66 composed of a Pt / Au electrode is _replaced with p-type Zn _0.18 M
g _0.68 Cd _0.14 Se formed in ohmic contact with the clad layer 64. Similarly, an n-side electrode 61 made of a Ti / Pt / Au electrode is formed on the n-type Zn _0.25 Mg _0.5 Cd _0.25 Se clad layer 60 by, for example, a lift-off method to make ohmic contact with Pd / Pt.
The p-side electrode 56 composed of the Au / Au electrode is _replaced with p-type Zn _0.35 Mg
_It is formed on the _0.28 Cd _0.37 Se clad layer 55 to make ohmic contact. On the other hand, an n-side electrode 57 made of an In electrode is formed on the back surface of the n-type InP substrate 51 to make ohmic contact.

After that, the same steps as in the first embodiment are carried out to complete the desired semiconductor laser.

As described above, according to the multicolor light emitting semiconductor laser according to the fifth embodiment, the II-VI group compound semiconductor layer and the semiconductor laser capable of emitting green light which constitute the semiconductor laser capable of emitting red light are constituted. The II-VI group compound semiconductor layer and the II-VI group compound semiconductor layer forming the semiconductor laser capable of emitting blue light are n under the layers.
It is almost completely lattice-matched with the type In _0.53 Ga _0.47 As layer 52, and there is almost no strain in these II-VI group compound semiconductor layers. Therefore, in particular, since there is almost no strain in the active layers of these semiconductor lasers, it is possible to reduce the generation of non-radiative centers in the vicinity of the active layers when current is applied to these semiconductor lasers. It is possible to suppress the deterioration of the semiconductor laser. As a result, it is possible to realize a multicolor light emitting semiconductor laser capable of emitting red, green and blue light with long life and high reliability.

Although the embodiments of the present invention have been specifically described above, the present invention is not limited to the above-described embodiments, and various modifications can be made based on the technical idea of the present invention.

For example, the manufacturing method of the multicolor light emitting semiconductor laser described in the above fifth embodiment is merely an example, and other manufacturing methods may be used.

Further, in the above-described first to fourth embodiments, the case where the present invention is applied to the semiconductor laser having a so-called DH structure (Double Heterostructure) has been described, but the present invention is a semiconductor having the SCH structure. It may be applied to a laser and may be applied to a light emitting diode.

[0087]

As described in the foregoing, according to the present invention, it is nearly lattice matched to the II-VI compound semiconductor layer constituting the light emitting device structure and _{In x Ga y Al 1-xy} As layer of the underlying The strain in the II-VI group compound semiconductor layer can be made extremely small. Therefore, in particular, by making the strain in the active layer extremely small, it is possible to reduce the generation of non-emission centers in the vicinity of the active layer when the semiconductor light emitting element is energized, and suppress the deterioration of the semiconductor light emitting element. You can As a result, a semiconductor light emitting device using a II-VI group compound semiconductor having a long life and high reliability can be realized. Further, it is possible to realize a multicolor light emitting semiconductor light emitting device using a II-VI group compound semiconductor having a long life and high reliability.

[Brief description of the drawings]

FIG. 1 In _x Ga _y Al _1-xy As in the present invention
It is an approximate line figure for explaining the range of a layer.

FIG. 2 is a schematic diagram showing the relationship between the band gap energy and the lattice constant of a typical binary II-VI compound semiconductor and III-V compound semiconductor.

FIG. 3 is a sectional view showing a semiconductor laser according to the first embodiment of the present invention.

FIG. 4 is a sectional view showing a semiconductor laser according to a second embodiment of the present invention.

FIG. 5 is a sectional view showing a semiconductor laser according to a third embodiment of the present invention.

FIG. 6 is a sectional view showing a semiconductor laser according to a fourth embodiment of the present invention.

FIG. 7 is a sectional view showing a multicolor light emitting semiconductor laser according to a fifth embodiment of the present invention.

FIG. 8 is a sectional view showing a conventional semiconductor laser.

[Explanation of symbols]

1 n-type GaAs substrate 2 n-type GaAs buffer layer 3 n-type In _0.05 Ga _0.95 As layer 4 n-type In _0.1 Ga _0.9 As layer 5 n-type In _0.15 Ga _0.85 As layer 6 n-type In _0.2 Ga _0.8 As layer 7 n-type In _0.25 Ga _0.75 As layer 8 n-type In _0.3 Ga _0.7 As layer 9 n-type Zn _0.68 Mg _0.2 Cd _0.12 Se clad layer 10 Zn _0.75 Cd _0.25 Se active layer 11 p-type Zn _0.68 Mg _0.2 Cd _0.12 Se clad layer 12, 26 , 36, 46, 65 Insulating layer 13, 27, 37, 47, 56, 66 p-side electrode 14, 28, 38, 48, 57, 61 n-side electrode 21, 31, 41, 51 n-type InP substrate 22, 32 , 42, 52 n-type In _0.53 Ga _0.47 As layer 23, 62 n-type Zn _0.18 Mg _0.68 Cd _0.14 Se clad layer 24, 63 Zn _0.25 Mg _0.5 Cd _0.25 Se active layer 25, 64 p-type Zn _{0. 18} Mg _0.68 Cd _0.14 Se clad layer 33, 60 n-type Zn _0.25 Mg _0.5 Cd _0.25 Se clad layer 34, 59 Zn _0.35 Mg _0.28 Cd _0.37 Se active layer 35, 58 p-type Zn _0.25 Mg _0.5 Cd _0.25 Se clad layer 43, 53 n-type Zn _0.35 Mg _0.28 Cd _0.37 Se clad layer 44, 54 Zn _0.48 Cd _0.52 Se active layer 45, 55 p-type Zn _0.35 Mg _0.28 Cd _0.37 Se clad layer

Claims (19)

[Claims] And 1. A semiconductor _{substrate, In x Ga y Al 1-} xy As layer on the semiconductor substrate and (where, 0 <x ≦ 1 and 0 ≦ y <1 and x + y ≦ 1), said an In _x Ga _y Zn, Mg, on the Al _1-xy As layer
A plurality of light-emitting element structures that are composed of at least one group II element selected from the group consisting of Cd, Hg, and Be and at least one group VI element selected from the group consisting of Se, S, and Te And a II-VI group compound semiconductor layer. 2. The semiconductor light emitting device according to claim 1, wherein the plurality of II-VI compound semiconductor layers are substantially lattice-matched with the In _x Ga _y Al _1-xy As layer. 3. The strain of each of the II-VI group compound semiconductor layers is within ± 1%, and the plurality of IIs.
The semiconductor light emitting device according to claim 1, wherein the strain of the entire group VI compound semiconductor layer is within ± 1%. 4. The strain of each of the II-VI group compound semiconductor layers is within ± 0.7%, and the total strain of the plurality of II-VI group compound semiconductor layers is ± 0.7%.
The semiconductor light emitting element according to claim 1, wherein Wherein said _{In x Ga y Al 1-xy} As layer I
The semiconductor light emitting device according to claim 1, wherein the n _x Ga _1-x As layer (where 0 <x ≦ 1) is formed. 6. The In _x Ga _y Al _1-xy As layer is I.
The semiconductor light emitting device according to claim 1, wherein the n _y Al _1-y As layer (where 0 ≦ y ≦ 1) is formed. 7. The semiconductor light emitting device according to claim 1, wherein the semiconductor substrate is a GaAs substrate. 8. The semiconductor light emitting device according to claim 1, wherein the semiconductor substrate is an InP substrate. 9. The semiconductor light emitting device according to claim 1, wherein the semiconductor substrate is an InGaAsP substrate. 10. The semiconductor substrate is a GaAs substrate, from the In _x Ga _1-x As layer of the In composition ratio x, the In _x Ga _1-x As layer and the 0 in the interface between the GaAs substrate, The In _x Ga _1-x As layer and the II-V layer
The above In _x Ga at the interface with the group I compound semiconductor layer
6. The semiconductor light emitting device according to claim 5, wherein the _1-x As layer and the II-VI group compound semiconductor layer monotonically increase to a value substantially lattice matched. 11. The semiconductor substrate is a GaAs substrate, and the In _x Ga _1-x As layer has a discrete In composition ratio and a monotonic In composition ratio from the GaAs substrate toward the II-VI compound semiconductor layer. More In
6. The semiconductor light emitting device according to claim 5, wherein the InGaAs layer formed of a GaAs layer and in contact with the II-VI group compound semiconductor layer has an In composition ratio substantially lattice-matched with the II-VI group compound semiconductor layer. . 12. The semiconductor substrate is a GaAs substrate, from the In _y Al _1-y As In composition ratio of the layer y is the In _y Al _1-y As layer and 0 at the interface between the GaAs substrate, The In _y Al _1-y As layer and the II-V layer
The above In _y Al at the interface with the group I compound semiconductor layer
7. The semiconductor light emitting device according to claim 6, wherein the _1-y As layer and the II-VI group compound semiconductor layer monotonically increase to a value at which they are substantially lattice-matched. 13. The semiconductor substrate is a GaAs substrate, and the In _y Al _1-y As layer has a discrete In composition ratio and a monotonic In composition ratio from the GaAs substrate toward the II-VI compound semiconductor layer. More In
7. The semiconductor light emitting device according to claim 6, wherein the InAlAs layer formed of an AlAs layer and in contact with the II-VI group compound semiconductor layer has an In composition ratio that is substantially lattice-matched with the II-VI group compound semiconductor layer. . 14. The plurality of II-VI group compound semiconductor layers include a first conductivity type ZnMgCdSe clad layer, an active layer, and a second conductivity type ZnMgCdSe clad layer. Semiconductor light emitting device. 15. A semiconductor _{substrate, In x Ga y Al 1-} xy As layer on the semiconductor substrate and (where, 0 <x ≦ 1 and 0 ≦ y <1 and x + y ≦ 1), said an In _x Ga _y Zn, Mg, on the Al _1-xy As layer
It is composed of at least one group II element selected from the group consisting of Cd, Hg, and Be and at least one group VI element selected from the group consisting of Se, S, and Te, and can emit light in the first color. Of a plurality of first II-VI compound semiconductor layers constituting the first light emitting device structure, and Z on the plurality of first II-VI compound semiconductor layers
Se, S and T and at least one group II element selected from the group consisting of n, Mg, Cd, Hg and Be
a plurality of second II-VI group compound semiconductor layers, which are composed of at least one or more VI group elements selected from the group consisting of e and constitute a second light emitting device structure capable of emitting light of a second color; Z on the plurality of second II-VI compound semiconductor layers
Se, S and T and at least one group II element selected from the group consisting of n, Mg, Cd, Hg and Be
and a plurality of third II-VI group compound semiconductor layers, which are composed of at least one or more VI group elements selected from the group consisting of e and constitute a third light emitting device structure capable of emitting light of a third color. A semiconductor light emitting device having. 16. The plurality of first II-VI compound semiconductor layers, the plurality of second II-VI compound semiconductor layers and the plurality of third II-VI compound semiconductor layers are In _x. 16. The semiconductor light emitting device according to claim 15, which is substantially lattice-matched with the Ga _y Al _1-xy As layer. 17. The strain of each of the first II-VI group compound semiconductor layers is within ± 1%, and the total strain of the plurality of first II-VI compound semiconductor layers is 1%. And the strain of each of the second II-VI group compound semiconductor layers is within ± 1%, and the strain of the plurality of second II-VI compound semiconductor layers is within 1%. And the strain of each of the third II-VI compound semiconductor layers is ± 1% or less, and the strain of the plurality of third II-VI compound semiconductor layers is ± 1% or less. 16. The semiconductor light emitting device according to claim 15, wherein 18. The strain of each of the first II-VI compound semiconductor layers is within ± 0.7%, and the total strain of the plurality of first II-VI compound semiconductor layers is Within ± 0.7%, each of the above second II
The strain of the -VI group compound semiconductor layer is within ± 0.7%, and the total strain of the plurality of second II-VI compound semiconductor layers is within ± 0.7%. The strain of the third II-VI compound semiconductor layer is ± 0.7.
16. The semiconductor light emitting device according to claim 15, wherein the strain is within 0.1%, and the total strain of the plurality of third II-VI compound semiconductor layers is within ± 0.7%. 19. The semiconductor light emitting device according to claim 15, wherein the first color, the second color and the third color are red, green and blue.