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JPH09167752A - Method and device for chemical solution treatment - Google Patents

Method and device for chemical solution treatment

Info

Publication number
JPH09167752A
JPH09167752A JP32556195A JP32556195A JPH09167752A JP H09167752 A JPH09167752 A JP H09167752A JP 32556195 A JP32556195 A JP 32556195A JP 32556195 A JP32556195 A JP 32556195A JP H09167752 A JPH09167752 A JP H09167752A
Authority
JP
Japan
Prior art keywords
impurities
chemical
impurity removing
liquid
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP32556195A
Other languages
Japanese (ja)
Inventor
Toshiaki Omori
寿朗 大森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP32556195A priority Critical patent/JPH09167752A/en
Publication of JPH09167752A publication Critical patent/JPH09167752A/en
Pending legal-status Critical Current

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  • Cleaning Or Drying Semiconductors (AREA)
  • Treatment Of Liquids With Adsorbents In General (AREA)
  • Electrostatic Separation (AREA)
  • Weting (AREA)

Abstract

PROBLEM TO BE SOLVED: To prevent recontamination of substrate surface by the impurities in a chemical solution by a method wherein an impurity removing device is separated from a chemical solution circulating system, the impurities attracted to an attraction plate are desorved and they are regenerated by the impurity removing device. SOLUTION: First, a washing fluid 2 is poured into an impurity removing device 9a provided in parallel with an impurity removing device 9b, a substrate 1 is washed by circulating the washing fluid 2, and at the same time, the impurities in the washing fluid 2 are removed. On the other hand, the impurity removing device 9a is regenerated. Then, a washing fluid 2 is poured into the impurity removing device 9b, the substrate 1 is washed by circulating the washing fluid 2, and at the same time, the impurities in the washing fluid 2 are removed. On the other hand, the other impurity removing device 9a is regenerated. The impurities in the washing fluid 2 are continuously removed by repeating the above-mentioned operations. As a result, the function of the impurity removing devices 9a and 9b can be maintained, the impurity density of the washing fluid 2 can be lessened, and the adhesion of impurities to the surface of the substrate can be prevented.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】この発明は半導体の製造過程
における半導体基板の薬液処理を行う装置および薬液処
理方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and a method for chemical treatment of a semiconductor substrate in a semiconductor manufacturing process.

【0002】[0002]

【従来の技術】半導体の製造工程では、半導体基板(以
下、基板と称す)表面に微細な素子を形成するため、清
浄な基板表面が必要となる。このため基板の洗浄工程で
は、高純度な各種の酸・アルカリ溶液を用いて洗浄を行
う。従来の洗浄装置は、例えば図3に示すように、基板
1を例えばアンモニア水/過酸化水素水の混合液などの
アルカリ性溶液から成る洗浄液2に浸漬して洗浄する処
理槽3を内槽3aと外槽3bとの二重構造とし、内槽3
aから外槽3bにオーバーフローした洗浄液2をエア駆
動式ポンプ4によって循環して樹脂フィルタ5(以下、
フィルタ5と称す)を経て内槽3aに還流させるように
した装置が知られている。フィルタ5では洗浄液2中に
含まれる粒径0.05〜0.1μm以上の粒子状不純物
を除去する。
2. Description of the Related Art In the manufacturing process of semiconductors, fine elements are formed on the surface of a semiconductor substrate (hereinafter referred to as a substrate), so that a clean substrate surface is required. Therefore, in the substrate cleaning step, cleaning is performed using various highly pure acid / alkali solutions. In a conventional cleaning apparatus, for example, as shown in FIG. 3, a processing tank 3 for cleaning a substrate 1 by immersing the substrate 1 in a cleaning liquid 2 composed of an alkaline solution such as a mixed solution of ammonia water / hydrogen peroxide solution is called an inner tank 3a. Double structure with outer tank 3b, inner tank 3
The cleaning liquid 2 overflowing from a to the outer tub 3b is circulated by the air-driven pump 4 and the resin filter 5 (hereinafter,
A device is known in which the inner tank 3a is caused to flow back through a filter 5). The filter 5 removes particulate impurities contained in the cleaning liquid 2 and having a particle size of 0.05 to 0.1 μm or more.

【0003】また、近年の半導体装置の微細化により、
より清浄な基板表面を形成できる洗浄装置が要求され、
フィルタ5の孔径以下の例えば粒径0.05μm以下の
微小な粒子状不純物(以下、微粒子不純物と称す)やメ
タル不純物が除去できる不純物除去装置を備えた洗浄装
置も考案されている。図4は例えば特開平4−6132
9号公報記載の不純物除去装置6を示す構成図であり、
図に示すように、導電性材料から成る吸着板7に電位を
加え、洗浄液2中の電荷を帯びた不純物8を吸着板7に
吸着させて捕獲するものである。
Further, due to recent miniaturization of semiconductor devices,
A cleaning device that can form a cleaner substrate surface is required,
A cleaning device provided with an impurity removing device capable of removing fine particulate impurities (hereinafter referred to as fine particle impurities) and metal impurities having a pore diameter of the filter 5 or less, for example, a particle diameter of 0.05 μm or less, has also been devised. FIG. 4 shows, for example, Japanese Patent Laid-Open No. 4-6132.
It is a block diagram which shows the impurity removal apparatus 6 of the 9th publication.
As shown in the figure, a potential is applied to the adsorption plate 7 made of a conductive material, and the charged impurities 8 in the cleaning liquid 2 are adsorbed by the adsorption plate 7 and captured.

【0004】このような不純物除去装置6を図3に示す
ような洗浄装置における洗浄液2の循環系に備えること
により、微粒子不純物およびメタル不純物も除去でき
る。ここで、洗浄液2中で粒子状不純物は表面に電荷を
帯びた層が形成され、また、Al、Fe、Cuなどの各
種メタル不純物も正あるいは負の電荷を帯びているた
め、フィルタ5を通過した微粒子不純物およびメタル不
純物は電荷を帯びた不純物8として除去される。
By providing such an impurity removing device 6 in the circulation system of the cleaning liquid 2 in the cleaning device as shown in FIG. 3, fine particle impurities and metal impurities can also be removed. Here, a layer having a charge is formed on the surface of the particulate impurities in the cleaning liquid 2, and various metal impurities such as Al, Fe, and Cu also have a positive or negative charge, and thus pass through the filter 5. The formed fine particle impurities and metal impurities are removed as charged impurities 8.

【0005】[0005]

【発明が解決しようとする課題】従来の洗浄装置は以上
のように構成されているため、洗浄液2が不純物除去装
置6内を流れる間に、洗浄液2中の微粒子不純物および
メタル不純物を吸着板7に吸着させて捕獲するものであ
る。この不純物除去装置6による不純物の捕獲は、フィ
ルタ5のように網目で捕獲するものと違い、微粒子不純
物およびメタル不純物を完全に捕獲することは難しく、
一部は通過してしまうものであった。また、基板1の洗
浄を繰り返し行うことにより、吸着板7には吸着された
不純物が増加するが、さらにその状態で不純物の捕獲を
続けることになり、捕獲率は徐々に低下するものであっ
た。このため洗浄液2中には微粒子不純物およびメタル
不純物等の不純物が蓄積され、その不純物が基板1表面
に付着して基板1を再汚染させてしまうという問題点が
あった。
Since the conventional cleaning device is configured as described above, while the cleaning liquid 2 flows through the impurity removing device 6, the particulate plate 7 and the metal impurities in the cleaning liquid 2 are adsorbed on the adsorption plate 7. It is adsorbed on and captured. It is difficult for the impurity removing device 6 to capture the impurities completely unlike the filter 5 in which the impurities are captured by a mesh like the filter 5,
Some passed. Further, by repeating the cleaning of the substrate 1, the amount of impurities adsorbed on the adsorption plate 7 increases, but the impurities are further trapped in this state, and the trapping ratio gradually decreases. . Therefore, there is a problem that impurities such as fine particle impurities and metal impurities are accumulated in the cleaning liquid 2, and the impurities adhere to the surface of the substrate 1 to recontaminate the substrate 1.

【0006】図5は洗浄液2中の各種メタル不純物濃度
と、そのメタル不純物の基板1への付着量との相関を示
すグラフである。このような基板1の再汚染を防止する
ため、従来は頻繁に洗浄液2を新しく交換したり、不純
物除去装置6を取り換える必要があった。
FIG. 5 is a graph showing the correlation between the concentration of various metal impurities in the cleaning liquid 2 and the amount of the metal impurities deposited on the substrate 1. In order to prevent such recontamination of the substrate 1, it has conventionally been necessary to frequently replace the cleaning liquid 2 with a new one or replace the impurity removing device 6.

【0007】この発明は、以上のような問題点を解消す
るためになされたものであって、基板の洗浄装置等の薬
液処理装置において、薬液の清浄度を容易に安価に保持
できて、薬液中の不純物による基板表面の再汚染を有効
に防止することを目的とする。
The present invention has been made to solve the above problems, and in a chemical treatment apparatus such as a substrate cleaning apparatus, the cleanliness of the chemical can be easily maintained at a low cost, The purpose is to effectively prevent recontamination of the substrate surface due to impurities therein.

【0008】[0008]

【課題を解決するための手段】この発明の請求項1に係
わる薬液処理装置は、薬液を循環させる機構と、上記薬
液の循環系に配設され、導電性材料から成る吸着板に電
位を与えて不純物を吸着することによって、上記薬液中
の不純物を除去する不純物除去装置と、上記不純物除去
装置を上記薬液の循環系から切り離し、上記吸着板に吸
着した不純物を脱離させて上記不純物除去装置を再生す
る機構と、を備えたものである。
According to a first aspect of the present invention, there is provided a chemical solution treating apparatus, wherein a mechanism for circulating a chemical solution and a circulation system for the chemical solution are provided to apply an electric potential to an adsorption plate made of a conductive material. The impurity removing device for removing impurities in the chemical liquid by adsorbing the impurities by disconnecting the impurity removing device from the circulation system of the chemical liquid, and desorbing the impurities adsorbed on the adsorption plate to remove the impurities. And a mechanism for reproducing.

【0009】この発明の請求項2に係わる薬液処理装置
は、薬液中の粒子状不純物を除去するフィルタを、上記
薬液の循環系の不純物除去装置の入口側に備えたもので
ある。
The chemical solution treating apparatus according to a second aspect of the present invention is provided with a filter for removing particulate impurities in the chemical solution on the inlet side of the impurity removing apparatus of the chemical solution circulating system.

【0010】この発明の請求項3に係わる薬液処理装置
は、複数の不純物除去装置を並列に備え、上記複数の不
純物除去装置を交替に薬液の循環系に用いて、上記薬液
中の不純物を除去し、上記薬液中の不純物除去と上記不
純物除去装置の再生とを同時進行で処理可能にしたもの
である。
A chemical treatment apparatus according to a third aspect of the present invention is provided with a plurality of impurity removing devices in parallel, and the plurality of impurity removing devices are alternately used in a chemical liquid circulation system to remove impurities in the chemical liquid. However, the removal of impurities in the chemical liquid and the regeneration of the impurity removal device can be performed simultaneously.

【0011】この発明の請求項4に係わる薬液処理装置
は、不純物除去装置を再生する機構に、吸着板に吸着し
た不純物を液中に脱離させる再生液の供給装置と、使用
済みの上記再生液を置換する純水あるいはエアーの供給
装置とを備えたものである。
According to a fourth aspect of the present invention, there is provided a chemical liquid treatment device, wherein a mechanism for regenerating the impurity removing device has a regenerator supply device for desorbing impurities adsorbed by the adsorption plate into the liquid, and the used regenerating device. A device for supplying pure water or air for replacing the liquid is provided.

【0012】この発明の請求項5に係わる薬液処理装置
は、再生液に酸性溶液あるいは上記酸性溶液に酸化剤を
混合した溶液を用いるものである。
The chemical solution treating apparatus according to a fifth aspect of the present invention uses an acidic solution as a regenerating solution or a solution obtained by mixing the acidic solution with an oxidizing agent.

【0013】この発明の請求項6に係わる薬液処理装置
は、不純物処理装置が、耐薬品性の筒状の壁面と、この
筒状の壁面内に導電性材料から成り電圧を印加できる2
ヶの相対向する櫛状の吸着板とを有し、上記2ヶの櫛状
の吸着板の櫛の歯に当たる部分の複数の板が互い違いに
交互に配設されたものである。
In the chemical liquid processing apparatus according to claim 6 of the present invention, the impurity processing apparatus comprises a chemical-resistant cylindrical wall surface, and a voltage is applied to the cylindrical wall surface made of a conductive material.
A plurality of comb-shaped suction plates opposed to each other, and a plurality of plates corresponding to comb teeth of the two comb-shaped suction plates are alternately arranged.

【0014】この発明の請求項7に係わる薬液処理装置
は、不純物除去装置が耐薬品性の筒状の壁面と、この筒
状の壁面内に導電性材料から成り電圧を印加できる吸着
板とを有し、上記吸着板表面が凹凸状であるものであ
る。
According to a seventh aspect of the present invention, in the chemical solution treating apparatus, the impurity removing apparatus comprises a chemical-resistant cylindrical wall surface and an adsorption plate made of a conductive material and capable of applying a voltage in the cylindrical wall surface. In addition, the surface of the suction plate is uneven.

【0015】この発明の請求項8に係わる薬液処理方法
は、再生液供給時に、不純物除去装置の吸着板に、不純
物吸着時と正負逆の電位を与えて、吸着していた不純物
を上記再生液中に脱離させるものである。
In the chemical treatment method according to the eighth aspect of the present invention, when the regenerant is supplied, the adsorbing plate of the impurity removing device is applied with a positive and negative electric potential opposite to that at the time of adsorbing the impurities to adsorb the adsorbed impurities into the regenerant. It is to be detached inside.

【0016】[0016]

【発明の実施の形態】BEST MODE FOR CARRYING OUT THE INVENTION

実施の形態1.以下、この発明の実施の形態1を図につ
いて説明する。なお、従来の技術と重複する箇所は適宜
その説明を省略する。図1はこの発明の実施の形態1に
よる薬液処理装置としての洗浄装置を示す構成図であ
る。図において、1〜5は従来のものと同じもので特に
2は薬液としての洗浄液、9a,9bは洗浄液2の循環
系に並列に2ケ備えられ、微粒子不純物およびメタル不
純物等の電荷を帯びた不純物を除去する不純物除去装
置、10は不純物除去装置9a,9bに接続され、電位
を調整するためのコントローラ、11は不純物除去装置
9a,9bを再生処理するための再生液供給装置、12
は同じく不純物除去装置9a,9bを再生処理する際に
用いる純水の供給装置、13はパージ用エアーの供給装
置である。14〜18は配管に設けられたバルブで、1
4a,14bはそれぞれ洗浄液2が通る配管の不純物除
去装置9a,9bの前後に設けられたバルブ、15a,
15bはそれぞれ再生処理のための配管の不純物除去装
置9a,9bの前後に設けられたバルブ、16は再生液
の供給を制御するバルブ、17は純水の供給を制御する
バルブ、18はパージ用エアーの供給を制御するバルブ
であり、19は再生処理に用いた再生液および純水の廃
液口である。
Embodiment 1 FIG. Embodiment 1 of the present invention will be described below with reference to the drawings. Note that the description of the same parts as those of the conventional technique will be appropriately omitted. 1 is a configuration diagram showing a cleaning device as a chemical liquid processing device according to a first embodiment of the present invention. In the figure, 1 to 5 are the same as the conventional ones, particularly 2 is a cleaning liquid as a chemical liquid, and 9a and 9b are provided in parallel in the circulation system of the cleaning liquid 2 and are charged with charges such as fine particle impurities and metal impurities. Impurity removing device for removing impurities, 10 is a controller connected to the impurity removing devices 9a, 9b for adjusting the potential, 11 is a regenerant supply device for regenerating the impurity removing devices 9a, 9b, 12
Is a pure water supply device used when regenerating the impurity removing devices 9a and 9b, and 13 is a purge air supply device. 14 to 18 are valves provided in the pipe,
4a and 14b are valves provided before and after the impurity removing devices 9a and 9b of the pipe through which the cleaning liquid 2 passes, and 15a and
Reference numeral 15b is a valve provided in front of and behind the impurity removing devices 9a and 9b of the pipe for the regenerating process, 16 is a valve for controlling the supply of the regenerant, 17 is a valve for controlling the supply of pure water, and 18 is for purging. A valve that controls the supply of air, and 19 is a waste liquid port for the regenerating liquid and pure water used in the regenerating process.

【0017】図2は不純物除去装置9a,9bの構造を
示す断面図で、図2(a)は全体の縦方向断面図、図2
(b)は図2(a)におけるA−A線による断面図、図
2(c)は図2(a)におけるB−B線による断面図で
ある。図において、20は耐薬品性の樹脂から成る筒状
の壁面(以下、樹脂筒と称す)、21a,21bは樹脂
筒20内部に設置され、例えばケイ素、あるいはケイ素
化合物等の導電性材料から成る吸着板で、それぞれコン
トローラ10に接続され(図1参照)電圧を印加するこ
とによって電荷を帯びた不純物を吸着するものである。
図2に示すように、樹脂筒20内部には2ケの櫛状の吸
着板21a,21bが向かい合い、この櫛状の吸着板2
1a,21bの櫛の歯に当たる部分の複数の板が互い違
いに交互に配設される。
FIG. 2 is a sectional view showing the structure of the impurity removing devices 9a and 9b. FIG. 2 (a) is a longitudinal sectional view of the whole, and FIG.
2B is a sectional view taken along the line AA in FIG. 2A, and FIG. 2C is a sectional view taken along the line BB in FIG. 2A. In the figure, 20 is a cylindrical wall made of a chemical resistant resin (hereinafter referred to as a resin cylinder), and 21a and 21b are installed inside the resin cylinder 20 and are made of a conductive material such as silicon or a silicon compound. Each of the suction plates is connected to the controller 10 (see FIG. 1) to adsorb a charged impurity by applying a voltage.
As shown in FIG. 2, two comb-shaped suction plates 21 a and 21 b face each other inside the resin cylinder 20.
A plurality of plates corresponding to the teeth of the combs 1a and 21b are alternately arranged.

【0018】以上のように構成された洗浄装置につい
て、以下その動作を説明する。まず、並列に備えられた
一方の不純物除去装置9aに洗浄液2を通液して循環さ
せ基板1の洗浄を行い、同時に洗浄液2中の不純物除去
を行う。この間に他方の不純物除去装置9bの再生処理
を行う。この工程をA工程とする。次に、再生処理を完
了した不純物除去装置9bに洗浄液2を通液して循環さ
せ基板1の洗浄を行い、同時に洗浄液2中の不純物除去
を行う。この間にもう一方の不純物除去装置9aの再生
処理を行う。この工程をB工程とする。このようなA工
程とB工程とを所定の時間で交互に繰り返すことによ
り、連続して洗浄液2中の不純物除去を行う。
The operation of the cleaning apparatus constructed as above will be described below. First, the cleaning liquid 2 is passed through one of the impurity removing devices 9a provided in parallel and circulated to clean the substrate 1, and at the same time, the impurities in the cleaning liquid 2 are removed. During this period, the other impurity removing device 9b is regenerated. This process is called process A. Next, the cleaning liquid 2 is passed through the impurity removing device 9b that has completed the regeneration treatment and circulated to clean the substrate 1, and at the same time, the impurities in the cleaning liquid 2 are removed. During this period, the other impurity removing device 9a is regenerated. This step is called Step B. Impurities in the cleaning liquid 2 are continuously removed by alternately repeating the steps A and B for a predetermined time.

【0019】以下、上記A工程について詳細に説明す
る。まず、バルブ14aを開、バルブ14bを閉にし、
不純物除去装置9aの2ケの吸着板21a,21bにコ
ントローラ10より正負逆の電位を、例えば±5〜50
Vで与える。この状態で、処理槽3の内槽3aから外槽
3bにオーバーフローした洗浄液2をエアー駆動式ポン
プ4によって吸引し、フィルタ5、不純物除去装置9a
を介し内槽3aに還流させることにより連続して洗浄液
2を循環させる。この時、洗浄液2中に含まれる粒径
0.05〜0.1μm以上の粒子状不純物はフィルタ5
で除去され、フィルタ5を通過した粒径0.05μm以
下の微粒子不純物およびAl、Fe、Cuなどの各種メ
タル不純物は洗浄液2中で正あるいは負の電荷を帯びて
おり、不純物除去装置9a内の吸着板21a,21bに
電気吸着により捕獲される。
The above step A will be described in detail below. First, open the valve 14a and close the valve 14b,
A controller 10 applies a positive and negative electric potential to the two adsorption plates 21a and 21b of the impurity removing device 9a, for example, ± 5 to 50.
Give with V. In this state, the cleaning liquid 2 overflowing from the inner tank 3a of the processing tank 3 to the outer tank 3b is sucked by the air-driven pump 4, and the filter 5 and the impurity removing device 9a.
The cleaning liquid 2 is continuously circulated by being refluxed to the inner tank 3a via the. At this time, particulate impurities having a particle size of 0.05 to 0.1 μm or more contained in the cleaning liquid 2 are filtered by the filter 5.
The fine particle impurities having a particle size of 0.05 μm or less and various metal impurities such as Al, Fe, and Cu which have been removed by the filter 5 and have a positive or negative charge in the cleaning liquid 2 are stored in the impurity removing device 9a. It is captured by the adsorption plates 21a and 21b by electroadsorption.

【0020】この実施の形態による吸着板21a,21
bは図2に示すように2ケの吸着板21a,21bがそ
れぞれ櫛状で櫛の歯に当たる部分の複数の板が互い違い
に交互に配設されているため、洗浄液2と吸着板21
a,21bが対向する部分との接触面積が増大し、洗浄
液2中の電荷を帯びた不純物を有効に捕獲できる。
The suction plates 21a, 21 according to this embodiment
As shown in FIG. 2, two suction plates 21a and 21b are comb-shaped, and a plurality of plates corresponding to the teeth of the comb are alternately arranged.
The contact area between the a and 21b facing each other is increased, and the charged impurities in the cleaning liquid 2 can be effectively captured.

【0021】上記一方の不純物除去装置9aを介した洗
浄液2の循環と同時進行で行う他方の不純物除去装置9
bの再生処理について、以下に説明する。まず、バルブ
15aを閉、バルブ15bを開にし、バルブ17を開に
して純水供給装置12から不純物除去装置9b内に純水
を導入する。これにより純水供給装置12内に残存して
いた洗浄液2が純水で置換される。次にバルブ17を
閉、バルブ16を開にして再生液供給装置11から不純
物除去装置9b内に再生液を導入する。再生液には、例
えば希塩酸または希弗酸等の酸性溶液あるいはこれら酸
性溶液に過酸化水素水等の酸化剤を混合した溶液を使用
する。この再生液の導入の際、不純物除去装置9b内の
吸着板21a,21bに、洗浄液2中の不純物を吸着さ
せる時と正負逆の電位をコントローラ10より与える。
これにより吸着板21a,21bに電気的に吸着してい
た不純物は、再生液中に脱離する。このうち各種のメタ
ル不純物は、酸性溶液である再生液中に溶解する。
The other impurity removing device 9 is operated simultaneously with the circulation of the cleaning liquid 2 through the one impurity removing device 9a.
The reproduction process of b will be described below. First, the valve 15a is closed, the valve 15b is opened, the valve 17 is opened, and pure water is introduced from the pure water supply device 12 into the impurity removing device 9b. As a result, the cleaning liquid 2 remaining in the pure water supply device 12 is replaced with pure water. Next, the valve 17 is closed and the valve 16 is opened to introduce the regenerant from the regenerant supply device 11 into the impurity removing device 9b. As the regenerating liquid, for example, an acidic solution such as dilute hydrochloric acid or dilute hydrofluoric acid or a solution obtained by mixing an oxidizing agent such as hydrogen peroxide solution with these acidic solutions is used. At the time of introducing the regenerant, the controller 10 gives the positive and negative potentials opposite to those when the impurities in the cleaning liquid 2 are adsorbed to the adsorption plates 21a and 21b in the impurity removing device 9b.
As a result, the impurities electrically adsorbed on the adsorption plates 21a and 21b are desorbed in the regenerant. Of these, various metal impurities are dissolved in the regeneration solution, which is an acidic solution.

【0022】次に、バルブ16を閉、バルブ17を開に
して、再び純水供給装置12から不純物除去装置9b内
に純水を導入して洗浄することにより、吸着板21a,
21bから脱離した不純物を再生液とともに廃液口19
から排出する。さらに、バルブ17を閉、バルブ18を
開にしてエアー供給装置13から不純物除去装置9b内
にエアーを導入してパージする。再生処理に用いられた
再生液および純水は全て廃液口19から排出される。こ
の後バルブ18を閉にして不純物除去装置9bの再生処
理を完了する。
Next, the valve 16 is closed and the valve 17 is opened, and pure water is again introduced from the pure water supply device 12 into the impurity removing device 9b to wash it, whereby the adsorption plates 21a,
Impurities desorbed from 21b, together with the regenerant, are drained 19
Discharged from Further, the valve 17 is closed and the valve 18 is opened to introduce air from the air supply device 13 into the impurity removing device 9b for purging. The regeneration liquid and the pure water used for the regeneration treatment are all discharged from the waste liquid port 19. Then, the valve 18 is closed to complete the regeneration process of the impurity removing device 9b.

【0023】以上のようなA工程による処理の後、B工
程による処理を行う。B工程では、バルブ14aを閉、
14bを開にし、バルブ15aを開、バルブ15bを閉
にして、A工程で再生処理をした不純物除去装置9bを
洗浄液2の循環系に用い、A工程で洗浄液2の循環系に
用いた不純物除去装置9aを上記循環系から切り離し再
生処理する。処理の方法はA工程と同様である。
After the processing by the step A as described above, the processing by the step B is performed. In step B, the valve 14a is closed,
14b is opened, the valve 15a is opened, and the valve 15b is closed, and the impurity removing device 9b regenerated in the step A is used for the circulation system of the cleaning liquid 2, and the impurities removal used for the circulation system of the cleaning liquid 2 in the step A is performed. The device 9a is separated from the circulation system and regenerated. The method of treatment is the same as in step A.

【0024】この実施の形態では、不純物除去装置9
a,9bを再生させる機構を洗浄装置に設けたため、吸
着板21a,21bによる不純物の捕獲率が低下して
も、吸着した不純物を吸着板21a,21bから脱離さ
せて再生することによって、不純物除去装置9a,9b
の機能を保つことができる。このため、洗浄液2中の不
純物濃度を低減でき、基板1表面への不純物の付着を有
効に防止できる。また、一度作製した洗浄液2を、不純
物濃度を増加させることなく長時間使用可能にできるた
め、洗浄液2の交換をほとんど行う必要がなく、コスト
も低減できる。
In this embodiment, the impurity removing device 9
Since the cleaning device is provided with a mechanism for regenerating a and 9b, even if the trapping rate of impurities by the adsorbing plates 21a and 21b is reduced, the adsorbed impurities are desorbed from the adsorbing plates 21a and 21b to regenerate the impurities. Removal device 9a, 9b
The function of can be maintained. Therefore, the concentration of impurities in the cleaning liquid 2 can be reduced, and the adhesion of impurities to the surface of the substrate 1 can be effectively prevented. Further, since the cleaning liquid 2 once prepared can be used for a long time without increasing the impurity concentration, it is almost unnecessary to replace the cleaning liquid 2, and the cost can be reduced.

【0025】また、不純物除去装置9a,9bを再生処
理する際、再生液を供給することにより、吸着板21
a,21bに吸着していた不純物を再生液中に脱離す
る。この時、吸着板21a,21bに不純物吸着時と正
負逆の電位を与えるため、不純物の吸着板21a,21
bからの脱離が確実に行える。また、再生液に希塩酸ま
たは希弗酸等の酸性溶液あるいはこれら酸性溶液に過酸
化水素水等の酸化剤を混合した溶液を用いるため、メタ
ル不純物が再生液中に溶解し、不純物の吸着板21a、
21bから再生液への脱離が有効に行える。
When the impurity removing devices 9a and 9b are regenerated, the adsorbing plate 21 is supplied by supplying a regenerating liquid.
The impurities adsorbed on a and 21b are desorbed into the regenerant. At this time, since positive and negative electric potentials are applied to the adsorption plates 21a and 21b, which are opposite to those when the impurities are adsorbed, the adsorption plates 21a and 21b
Detachment from b can be reliably performed. Further, since an acidic solution such as dilute hydrochloric acid or dilute hydrofluoric acid or a solution obtained by mixing an oxidizing agent such as hydrogen peroxide solution into the acidic solution is used as the regenerating solution, metal impurities are dissolved in the regenerating solution and the impurity adsorbing plate 21a is used. ,
The desorption from 21b to the regeneration liquid can be effectively performed.

【0026】また、この実施の形態では、2ケの不純物
除去装置9a,9bを並列に備えて、A工程では一方の
不純物除去装置9aによる不純物除去を行い、同時に他
方の不純物除去装置9bの再生処理を行う。次に、B工
程では、不純物除去装置9bによる不純物除去を行い、
同時にもう一方の不純物除去装置9aの再生処理を行
う。このようなA工程とB工程とを交互に行うものであ
る。すなわち、2ケの不純物除去装置9a,9bを交替
に洗浄液の循環系に用いることにより、再生処理中も洗
浄液2を循環させて連続して不純物除去を行うことがで
き、洗浄液2の清浄度を保持して、洗浄装置を長時間連
続使用することができる。
Further, in this embodiment, two impurity removing devices 9a and 9b are provided in parallel, and in step A, one impurity removing device 9a removes impurities, and at the same time, the other impurity removing device 9b is regenerated. Perform processing. Next, in step B, impurities are removed by the impurity removing device 9b,
At the same time, the other impurity removing device 9a is regenerated. The process A and the process B are alternately performed. That is, by alternately using the two impurity removing devices 9a and 9b in the circulation system of the cleaning liquid, the cleaning liquid 2 can be circulated during the regeneration treatment to continuously remove impurities, and the cleanliness of the cleaning liquid 2 can be improved. The cleaning device can be held and used continuously for a long time.

【0027】なお、上記実施の形態1では、洗浄装置に
2ケの不純物除去装置9a,9bを備えたが、3ケまた
はそれ以上の不純物除去装置を備えて交替に不純物除去
に用いても良い。
In the first embodiment, the cleaning device is provided with the two impurity removing devices 9a and 9b, but the cleaning device may be provided with three or more impurity removing devices and may be alternately used for the impurity removal. .

【0028】また、不純物除去装置9a,9bの吸着板
21a,21bは櫛状としたが、吸着板21a,21b
表面を凹凸状にして洗浄液2との接触面積を増大させて
も、不純物除去に有効である。
Further, although the suction plates 21a and 21b of the impurity removing devices 9a and 9b are formed in a comb shape, the suction plates 21a and 21b.
Even if the surface is made uneven to increase the contact area with the cleaning liquid 2, it is effective for removing impurities.

【0029】また、上記実施の形態では、薬液処理装置
として基板1を洗浄する洗浄装置を用いたが、薬液にエ
ッチング液を用いたウェットエッチング装置でも同様の
効果を奏する。
Further, in the above-described embodiment, the cleaning apparatus for cleaning the substrate 1 is used as the chemical processing apparatus, but a wet etching apparatus using an etching solution as the chemical also produces the same effect.

【0030】[0030]

【発明の効果】以上のようにこの発明によると、薬液処
理装置に不純物除去装置を再生する機構を備えたため、
不純物除去装置の機能を保ち、薬液中の不純物濃度を低
減でき、半導体基板等の被処理基板表面に不純物が付着
して汚染させるのを有効に防止できる。また薬液を長時
間使用できてコストも低減できる。
As described above, according to the present invention, the chemical treatment device is provided with the mechanism for regenerating the impurity removing device.
It is possible to maintain the function of the impurity removing device, reduce the impurity concentration in the chemical liquid, and effectively prevent impurities from adhering to and contaminating the surface of the substrate to be processed such as the semiconductor substrate. Further, the chemical solution can be used for a long time, and the cost can be reduced.

【0031】また、この発明によると、フィルターを備
えたために、薬液中の不純物のうちフィルタの孔径以上
の粒径の粒子状不純物をフィルタで除去し、微細な粒子
状不純物およびメタル不純物を再生可能な不純物除去装
置で除去するため、薬液中の不純物除去が効率的に行え
る。
Further, according to the present invention, since the filter is provided, it is possible to regenerate fine particulate impurities and metal impurities by removing particulate impurities having a particle diameter larger than the pore diameter of the filter from impurities in the chemical liquid. Since it is removed by a simple impurity removing device, impurities in the chemical solution can be removed efficiently.

【0032】また、この発明によると、複数の不純物除
去装置を並列に備え、これらを交替に薬液の循環系に用
いて薬液中の不純物を除去し、薬液中の不純物除去と不
純物除去装置の再生とを同時進行で処理可能としたた
め、再生処理中も連続して不純物除去を行うことがで
き、薬液の清浄度を保持して、薬液処理装置を長時間連
続使用することができる。
Further, according to the present invention, a plurality of impurity removing devices are provided in parallel, and these are alternately used for the circulation system of the chemical liquid to remove impurities in the chemical liquid to remove the impurities in the chemical liquid and regenerate the impurity removing device. Since it is possible to process simultaneously with and, impurities can be continuously removed during the regeneration process, the cleanliness of the chemical liquid can be maintained, and the chemical liquid processing device can be continuously used for a long time.

【0033】また、この発明によると、不純物除去装置
を再生する機構に、再生液供給装置および純水あるいは
エアーの供給装置を備えたため、不純物除去装置の吸着
板に吸着していた不純物を再生液中に脱離でき、さらに
純水あるいはエアーで再生液を置換できるため、容易に
再生処理が行える。
Further, according to the present invention, since the mechanism for regenerating the impurity removing device is provided with the regenerating liquid supplying device and the pure water or air supplying device, the impurities adsorbed on the adsorption plate of the impurity removing device are regenerated liquid. Since it can be desorbed inside and the regeneration liquid can be replaced with pure water or air, regeneration treatment can be easily performed.

【0034】また、この発明によると、再生液に、酸性
溶液、あるいは酸性溶液に酸化剤を混合した溶液を用い
るため、メタル不純物が再生液中に溶解でき、吸着板に
吸着していた不純物の再生液中への脱離を有効に行え、
不純物除去装置の再生処理が一層確実に行える。
Further, according to the present invention, since an acidic solution or a solution obtained by mixing an acidic solution with an oxidizing agent is used as the regenerating liquid, the metal impurities can be dissolved in the regenerating liquid and the impurities adsorbed on the adsorption plate can be dissolved. It can be effectively released into the regenerating liquid,
Regeneration of the impurity removing device can be performed more reliably.

【0035】また、この発明によると、不純物除去装置
が導電性材料からなり電圧を印加できる2ヶの相対向す
る櫛状の吸着板を有し、2ヶの櫛状の吸着板の櫛の歯に
当たる部分の複数の板が互い違いに交互に配設されたた
め、薬液と、吸着板が対向する部分との接触面積が増大
し、不純物を有効に捕獲して除去できる。
Further, according to the present invention, the impurity removing device is made of a conductive material and has two facing comb-shaped suction plates to which a voltage can be applied, and the comb teeth of the two comb-shaped suction plates. Since the plurality of plates corresponding to the contact part are alternately arranged, the contact area between the chemical solution and the part where the adsorption plate faces is increased, and the impurities can be effectively captured and removed.

【0036】また、この発明によると、吸着板表面を凹
凸状としたため、薬液と、吸着板が対向する部分との接
触面積が増大し、不純物を有効に捕獲して除去できる。
Further, according to the present invention, since the surface of the adsorption plate is made uneven, the contact area between the chemical solution and the portion facing the adsorption plate is increased, and the impurities can be effectively captured and removed.

【0037】また、この発明による薬液処理方法は、再
生液供給時に、不純物除去装置の吸着板に、不純物吸着
時と正負逆の電位を与えるため、吸着板に吸着していた
不純物を再生液中に確実に脱離でき、不純物除去装置の
再生処理が確実に行える。
Further, in the chemical treatment method according to the present invention, when the regenerant is supplied, the adsorption plate of the impurity removing device is applied with a positive and negative electric potential opposite to that at the time of adsorbing the impurities. Therefore, desorption can be surely performed, and the regeneration treatment of the impurity removing device can be reliably performed.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 この発明の実施の形態1による薬液処理装置
を示す構成図である。
FIG. 1 is a configuration diagram showing a chemical liquid processing apparatus according to a first embodiment of the present invention.

【図2】 この発明の実施の形態1による不純物除去装
置の構造を示す断面図である。
FIG. 2 is a sectional view showing the structure of the impurity removing apparatus according to the first embodiment of the present invention.

【図3】 従来の洗浄装置を示す構成図である。FIG. 3 is a configuration diagram showing a conventional cleaning device.

【図4】 従来の不純物除去装置を示す構成図である。FIG. 4 is a configuration diagram showing a conventional impurity removing apparatus.

【図5】 従来の洗浄装置の問題を説明するグラフであ
る。
FIG. 5 is a graph illustrating a problem of a conventional cleaning device.

【符号の説明】[Explanation of symbols]

2 薬液としての洗浄液、5 フィルタ、9a,9b
不純物除去装置、10 電位調整コントローラ、11
再生液供給装置、12 純水供給装置、13 エアー供
給装置、20 筒状の壁面、21a,21b 吸着板。
2 Cleaning solution as chemical solution, 5 filters, 9a, 9b
Impurity remover, 10 Potential adjustment controller, 11
Regeneration liquid supply device, 12 pure water supply device, 13 air supply device, 20 cylindrical wall surface, 21a, 21b adsorption plate.

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】 薬液を循環させる機構と、上記薬液の循
環系に配設され、導電性材料から成る吸着板に電位を与
えて不純物を吸着することによって、上記薬液中の不純
物を除去する不純物除去装置と、上記不純物除去装置を
上記薬液の循環系から切り離し、上記吸着板に吸着した
不純物を脱離させて上記不純物除去装置を再生する機構
と、を備えたことを特徴とする薬液処理装置。
1. An impurity for removing impurities in the chemical liquid by providing a mechanism for circulating the chemical liquid and a circulation system for the chemical liquid, and applying an electric potential to an adsorption plate made of a conductive material to adsorb the impurities. And a mechanism for separating the impurity removing device from the circulation system for the chemical liquid and desorbing the impurities adsorbed by the adsorption plate to regenerate the impurity removing device. .
【請求項2】 薬液中の粒子状不純物を除去するフィル
タを、上記薬液の循環系の不純物除去装置の入口側に備
えたことを特徴とする請求項1記載の薬液処理装置。
2. The chemical liquid treatment apparatus according to claim 1, wherein a filter for removing particulate impurities in the chemical liquid is provided on the inlet side of the impurity removal device in the chemical liquid circulation system.
【請求項3】 複数の不純物除去装置を並列に備え、上
記複数の不純物除去装置を交替に薬液の循環系に用い
て、上記薬液中の不純物を除去し、上記薬液中の不純物
除去と上記不純物除去装置の再生とを同時進行で処理可
能にしたことを特徴とする請求項1または2記載の薬液
処理装置。
3. A plurality of impurity removing devices are provided in parallel, and the plurality of impurity removing devices are alternately used for a circulation system of the chemical liquid to remove impurities in the chemical liquid, and to remove impurities in the chemical liquid and the impurities. The chemical liquid treatment apparatus according to claim 1 or 2, wherein the removal apparatus can be regenerated at the same time.
【請求項4】 不純物除去装置を再生する機構に、吸着
板に吸着した不純物を液中に脱離させる再生液の供給装
置と、使用済みの上記再生液を置換する純水あるいはエ
アーの供給装置とを備えたことを特徴とする請求項1〜
3のいずれかに記載の薬液処理装置。
4. A mechanism for regenerating the impurity removing device, a regenerator supply device for desorbing impurities adsorbed on the adsorption plate into the liquid, and a pure water or air supply device for replacing the used regenerant liquid. And 1 are provided.
3. The chemical treatment device according to any one of 3.
【請求項5】 再生液に酸性溶液あるいは上記酸性溶液
に酸化剤を混合した溶液を用いることを特徴とする請求
項4記載の薬液処理装置。
5. The chemical treatment apparatus according to claim 4, wherein an acidic solution or a solution obtained by mixing an oxidizing agent with the acidic solution is used as the regenerating liquid.
【請求項6】 薬液を循環させる機構と、上記薬液中の
不純物を電気的に吸着して除去する不純物除去装置とを
備えた薬液処理装置において、上記不純物処理装置が、
耐薬品性の筒状の壁面と、この筒状の壁面内に導電性材
料から成り電圧を印加できる2ヶの相対向する櫛状の吸
着板とを有し、上記2ヶの櫛状の吸着板の櫛の歯に当た
る部分の複数の板が互い違いに交互に配設されたことを
特徴とする薬液処理装置。
6. A chemical solution treating apparatus comprising a mechanism for circulating a chemical solution and an impurity removing apparatus for electrically adsorbing and removing impurities in the chemical solution, wherein the impurity treating apparatus comprises:
A chemical-resistant cylindrical wall surface and two opposing comb-shaped suction plates made of a conductive material and capable of applying a voltage are provided in the cylindrical wall surface. A chemical treatment apparatus, wherein a plurality of plates corresponding to the teeth of a comb of the plates are alternately arranged.
【請求項7】 薬液を循環させる機構と、上記薬液中の
不純物を電気的に吸着して除去する不純物除去装置とを
備えた薬液処理装置において、上記不純物除去装置が耐
薬品性の筒状の壁面と、この筒状の壁面内に導電性材料
から成り電圧を印加できる吸着板とを有し、上記吸着板
表面が凹凸状であることを特徴とする薬液処理装置。
7. A chemical solution treating apparatus comprising a mechanism for circulating a chemical solution and an impurity removing apparatus for electrically adsorbing and removing impurities in the chemical solution, wherein the impurity removing apparatus is a chemical-resistant tubular shape. A chemical treatment apparatus having a wall surface and an adsorption plate made of a conductive material and capable of applying a voltage in the cylindrical wall surface, wherein the adsorption plate surface is uneven.
【請求項8】 請求項4または5記載の薬液処理装置を
用いた薬液処理方法において、再生液供給時に、不純物
除去装置の吸着板に、不純物吸着時と正負逆の電位を与
えて、吸着していた不純物を上記再生液中に脱離させる
ことを特徴とする薬液処理方法。
8. The chemical treatment method using the chemical treatment apparatus according to claim 4 or 5, wherein when the regenerant is supplied, the adsorption plate of the impurity removal apparatus is applied with an electric potential that is opposite to that at the time of adsorbing the impurities to adsorb them. The chemical treatment method is characterized in that the impurities that have been used are desorbed into the regenerant.
JP32556195A 1995-12-14 1995-12-14 Method and device for chemical solution treatment Pending JPH09167752A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32556195A JPH09167752A (en) 1995-12-14 1995-12-14 Method and device for chemical solution treatment

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Application Number Priority Date Filing Date Title
JP32556195A JPH09167752A (en) 1995-12-14 1995-12-14 Method and device for chemical solution treatment

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JPH09167752A true JPH09167752A (en) 1997-06-24

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007185581A (en) * 2006-01-12 2007-07-26 Nomura Micro Sci Co Ltd Purification method and purification apparatus for oxidizing agent
US7472713B2 (en) 2001-08-20 2009-01-06 Tokyo Electron Limited Substrate processing apparatus
JP2013186082A (en) * 2012-03-09 2013-09-19 Shinshu Univ Device and method for purifying radioactive contaminated water
JP2014124576A (en) * 2012-12-26 2014-07-07 Disco Abrasive Syst Ltd Effluent treatment apparatus
JP2016192473A (en) * 2015-03-31 2016-11-10 株式会社Screenホールディングス Substrate processing device and substrate processing method
JP2017033991A (en) * 2015-07-29 2017-02-09 東京エレクトロン株式会社 Liquid processing method and liquid processing apparatus
TWI658173B (en) * 2016-09-30 2019-05-01 日商斯庫林集團股份有限公司 Substrate processing apparatus

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7472713B2 (en) 2001-08-20 2009-01-06 Tokyo Electron Limited Substrate processing apparatus
JP2007185581A (en) * 2006-01-12 2007-07-26 Nomura Micro Sci Co Ltd Purification method and purification apparatus for oxidizing agent
JP2013186082A (en) * 2012-03-09 2013-09-19 Shinshu Univ Device and method for purifying radioactive contaminated water
JP2014124576A (en) * 2012-12-26 2014-07-07 Disco Abrasive Syst Ltd Effluent treatment apparatus
JP2016192473A (en) * 2015-03-31 2016-11-10 株式会社Screenホールディングス Substrate processing device and substrate processing method
JP2017033991A (en) * 2015-07-29 2017-02-09 東京エレクトロン株式会社 Liquid processing method and liquid processing apparatus
TWI658173B (en) * 2016-09-30 2019-05-01 日商斯庫林集團股份有限公司 Substrate processing apparatus
US11217461B2 (en) 2016-09-30 2022-01-04 SCREEN Holdings Co., Ltd. Substrate processing device

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