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JPH0897644A - J-fet amplifier circuit - Google Patents

J-fet amplifier circuit

Info

Publication number
JPH0897644A
JPH0897644A JP25450594A JP25450594A JPH0897644A JP H0897644 A JPH0897644 A JP H0897644A JP 25450594 A JP25450594 A JP 25450594A JP 25450594 A JP25450594 A JP 25450594A JP H0897644 A JPH0897644 A JP H0897644A
Authority
JP
Japan
Prior art keywords
fet
source
resistor
amplifier circuit
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25450594A
Other languages
Japanese (ja)
Inventor
Shigeru Kawamura
茂 川村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Faurecia Clarion Electronics Co Ltd
Original Assignee
Clarion Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clarion Co Ltd filed Critical Clarion Co Ltd
Priority to JP25450594A priority Critical patent/JPH0897644A/en
Publication of JPH0897644A publication Critical patent/JPH0897644A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32Modifications of amplifiers to reduce non-linear distortion

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE: To provide a low distortion J-FET common source amplifier circuit without applying NFB. CONSTITUTION: An amplification use 1st J-FET 2 connects to ground via a 1st source resistor RS1. Furthermore, a 2nd J-FET 2 as a load is connected to the J-FET 1 via a 2nd source resistor RS2 and a 2nd (1st) resistor R2 (R1) is connected between a gate G2 and a voltage source (between the gate G2 and one terminal of the RS2) respectively. Since the 2nd J-FET 2 acts like a distortion cancelling element as a load of the J-FET, a low distortion amplifier circuit is realized without NFB.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はオーディオ増幅器等に好
適なJ−FETソース接地増幅回路に係り、特に歪打ち
消し要素を有する負荷を用いることにより、NFB(ネ
ガティブ・フィードバック)をかけることなく低歪のJ
−FET増幅回路を実現するための改良に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a J-FET grounded-source amplifier circuit suitable for audio amplifiers and the like, and in particular, by using a load having a distortion canceling element, a low distortion without applying NFB (negative feedback). J
-Improvement for realizing a FET amplifier circuit.

【0002】[0002]

【従来の技術】従来、J−FET(J型電界効果トラン
ジスタ)を使用した増幅回路として図3に示すようなJ
−FETソース接地増幅回路が一般的に用いられてい
る。図3の回路において、その交流的な電圧利得Aは、
近似的にはドレイン抵抗RDとソース抵抗RSとの比A
=RD/RSとなることは周知である。
2. Description of the Related Art Conventionally, as an amplifier circuit using a J-FET (J-type field effect transistor), as shown in FIG.
A FET source grounded amplifier circuit is commonly used. In the circuit of FIG. 3, the AC voltage gain A is
Approximately, the ratio A of the drain resistance RD and the source resistance RS
It is well known that = RD / RS.

【0003】[0003]

【発明が解決しようとする課題】しかしJ−FETの伝
達特性には非直線性があり、そのため図3の構成のまま
ではその出力波形に歪が生ずることも周知である。従来
ではこの歪は避けられないものとされてきた。そしてこ
の歪を減少させるために、図3の増幅回路を多段にして
用いることにより総合的な増幅率を大きくした上で、多
量のNFBをかけることが良いとされてきた。
However, it is well known that the transfer characteristic of the J-FET has nonlinearity, and therefore the output waveform is distorted with the configuration of FIG. Conventionally, this distortion has been inevitable. In order to reduce this distortion, it has been considered preferable to apply a large amount of NFB after increasing the overall amplification factor by using the amplifier circuit of FIG. 3 in multiple stages.

【0004】しかるに多量のNFBをかけることによ
り、いくつかの問題点も指摘されている。特に発振によ
る不安定性と、オーディオ回路に使用した場合の音質上
の不満足は大きな問題である。
However, some problems have been pointed out by applying a large amount of NFB. Instability due to oscillation and dissatisfaction in sound quality when used in an audio circuit are particularly serious problems.

【0005】本発明の目的は以上の点に鑑み、NFBを
かけることなしで、低歪のJ−FETソース接地増幅回
路を実現することにある。
In view of the above points, an object of the present invention is to realize a low-distortion J-FET source grounded amplifier circuit without applying NFB.

【0006】[0006]

【課題を解決するための手段】上記目的を達成するた
め、第1の発明は、第1のソース抵抗を介してソースを
接地した増幅用の第1のJ−FETを備えたJ−FET
増幅回路において、第1のJ−FETの負荷として上記
増幅用の第1のJ−FETと同一特性で、かつ第1のソ
ース抵抗と同じ値の第2のソース抵抗を有する第2のJ
−FETを用い、そのゲートと第2のソース抵抗の一端
に第1の抵抗、そのゲートと電圧源との間に第2の抵抗
を夫々接続したことを特徴とする。
To achieve the above object, a first invention is a J-FET having a first J-FET for amplification whose source is grounded via a first source resistor.
In the amplifier circuit, as a load of the first J-FET, a second J-FET having the same characteristics as the first J-FET for amplification and a second source resistance having the same value as the first source resistance.
A FET is used, and the first resistance is connected to one end of the gate and the second source resistance, and the second resistance is connected between the gate and the voltage source.

【0007】第2の発明は、第1の発明の回路におい
て、更に前記第1のJ−FETと同一特性で、第1のソ
ース抵抗と同じ値の第2のソース抵抗を備えた第3のJ
−FETを有し、この第3のJ−FETには前記第1の
J−FETと同一電流を流すようにし、そのゲートと第
2のソース抵抗の間に第1の抵抗と同じ値の第3の抵抗
を接続し、そのゲートと第3の抵抗の接続点を、出力端
子に接続したことを特徴とする。
A second invention is the circuit according to the first invention, further comprising a third source resistance having the same characteristics as the first J-FET and having the same value as the first source resistance. J
-FET, the same current as the first J-FET is caused to flow through the third J-FET, and the third J-FET has a first resistor having the same value as the first resistor between the gate and the second source resistor. The third resistor is connected, and the connection point between the gate and the third resistor is connected to the output terminal.

【0008】[0008]

【作用】第1の発明の回路において、第2のJ−FET
は、増幅用の第1のJ−FETの、歪打ち消し要素を有
する負荷として動作するので、NFBをかけることなく
低歪の増幅回路が実現される。
In the circuit of the first invention, the second J-FET is provided.
Operates as a load having a distortion canceling element of the first J-FET for amplification, so that a low distortion amplifier circuit is realized without applying NFB.

【0009】第2の発明の回路においては、第3のJ−
FETを用いることにより、第1の発明の回路で第1の
抵抗を流れる電流が無視できない時、この電流をキャン
セルするようにしている。
In the circuit of the second invention, the third J-
By using the FET, when the current flowing through the first resistor cannot be ignored in the circuit of the first invention, this current is canceled.

【0010】[0010]

【実施例】以下図面に示す本発明の実施例を説明する。
図1は本発明によるJ−FETソース接地増幅回路の一
実施例を示す。同図において増幅用の第1のJ−FET
1は第1のソース抵抗RS1を介して接地され、その負
荷として同一特性の第2のJ−FET2が歪打ち消し要
素として用いられている。第2のソース抵抗RS2はR
S1と同じ値で、ゲートG2と第2のソース抵抗RS2
の一端に第1の抵抗R1、そのゲートGと電圧源の間に
第2の抵抗R2が夫々接続されている。
Embodiments of the present invention shown in the drawings will be described below.
FIG. 1 shows an embodiment of a J-FET grounded source amplifier circuit according to the present invention. In the figure, the first J-FET for amplification is used.
1 is grounded via the first source resistor RS1, and the second J-FET 2 having the same characteristics is used as its load as a distortion canceling element. The second source resistance RS2 is R
The same value as S1, the gate G2 and the second source resistor RS2
A first resistor R1 is connected to one end of the first resistor R2, and a second resistor R2 is connected between its gate G and a voltage source.

【0011】図1の回路において、第1及び第2の抵抗
R1,R2はそれらを流れる電流が無視できるほど大き
な値のものとする。この時、出力端子の電圧VOUT
は、電圧源の電圧値VSから第1の抵抗R1両端の電圧
VR1と第2の抵抗R2の電圧VR2を引いたものとな
る。
In the circuit of FIG. 1, the first and second resistors R1 and R2 have a large value so that the current flowing through them can be ignored. At this time, the voltage VOUT of the output terminal
Is the voltage value VS of the voltage source minus the voltage VR1 across the first resistor R1 and the voltage VR2 across the second resistor R2.

【数1】VOUT=VS−VR2−VR1 ここで第2の抵抗R2が第1の抵抗R1のN倍の値の
時、R1,R2を流れる電流をほぼ同一と見做せること
から(J−FETのゲート電流は極めて小さく無視でき
る)、
## EQU1 ## VOUT = VS-VR2-VR1 When the second resistor R2 has a value N times that of the first resistor R1, the currents flowing through R1 and R2 can be regarded as almost the same (J- The gate current of the FET is extremely small and can be ignored),

【数2】VOUT=VS−(N+1)VR1 となる。## EQU00002 ## VOUT = VS- (N + 1) VR1.

【0012】また第1及び第2のJ−FETのゲート、
ソース間電圧を夫々VGS1,VGS2、第1及び第2
のソース抵抗RS1,RS2を流れる電流をIとする
と、
Also, the gates of the first and second J-FETs,
The source-to-source voltages are VGS1, VGS2, first and second, respectively.
Let I be the current flowing through the source resistances RS1 and RS2 of

【数3】VR1=VGS2+IRS2=VGS1+IR
S1=VIN であるから、、
[Formula 3] VR1 = VGS2 + IRS2 = VGS1 + IR
Since S1 = VIN,

【数4】VOUT=VS−(N+1)VIN となり、交流的には入力電圧VINの(N+1)倍の出
力電圧VOUTが出力端子に得られることになる。即
ち、図1の実施例回路は増幅率(N+1)の無歪電圧増
幅器と言うことができる。
## EQU4 ## VOUT = VS- (N + 1) VIN, and the output voltage VOUT that is (N + 1) times the input voltage VIN is obtained at the output terminal in terms of AC. That is, the embodiment circuit of FIG. 1 can be said to be a distortion-free voltage amplifier with an amplification factor (N + 1).

【0013】図2は本発明の他の実施例で、図の実施例
で第1の抵抗R1を流れる電流が無視できないとき、こ
れをキャンセルするための回路を追加している。この追
加回路は第3のJ−FET3、第3の抵抗R3、第3の
ソース抵抗RS3及び第4のJ−FET4及び第4のソ
ース抵抗RS4から成る。
FIG. 2 shows another embodiment of the present invention, in which a circuit is added to cancel the current flowing through the first resistor R1 when it cannot be ignored in the illustrated embodiment. This additional circuit consists of a third J-FET3, a third resistor R3, a third source resistor RS3 and a fourth J-FET4 and a fourth source resistor RS4.

【0014】図2の回路において、全てのJ−FET1
〜J−FET4の特性とそのソース抵抗RS1〜RS4
が同一の時、第1の抵抗R1と第3の抵抗R3の値が等
しければ、R1とR3を流れる電流はほぼ等しくなるた
め、R1を流れる電流は増幅用の第1のJ−FET1の
ドレインD1には流れ込まず、従って図1の回路で、R
1の値が大きくR1を流れる電流を無視できるのと同じ
効果が得られる。
In the circuit of FIG. 2, all J-FETs 1
~ Characteristics of J-FET4 and its source resistances RS1 to RS4
If the values of the first resistor R1 and the third resistor R3 are equal, the currents flowing through R1 and R3 are substantially equal, and the current flowing through R1 is the drain of the first J-FET1 for amplification. It does not flow into D1, so in the circuit of FIG.
The same effect can be obtained that the value of 1 is large and the current flowing through R1 can be ignored.

【0015】[0015]

【発明の効果】以上説明したように本発明によれば、N
FBをかけることなく低歪のJ−FETソース接地増幅
回路を得ることができる。
As described above, according to the present invention, N
A low-distortion J-FET source grounded amplifier circuit can be obtained without applying FB.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例を示す回路図である。FIG. 1 is a circuit diagram showing one embodiment of the present invention.

【図2】本発明の他の実施例を示す回路図である。FIG. 2 is a circuit diagram showing another embodiment of the present invention.

【図3】従来のJ−FETソース接地増幅回路を示す回
路図である。
FIG. 3 is a circuit diagram showing a conventional J-FET common-source amplifier circuit.

【符号の説明】[Explanation of symbols]

J−FET1〜J−FET4 J型電界効果トランジス
タ RS1〜RS4 ソース抵抗 R1〜R3 第1〜第3の抵抗 D1〜D4 ドレイン S1〜S4 ソース G1〜G4 ゲート
J-FET1 to J-FET4 J-type field effect transistor RS1 to RS4 source resistance R1 to R3 first to third resistances D1 to D4 drain S1 to S4 source G1 to G4 gate

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 第1のソース抵抗を介してソースを接地
した増幅用の第1のJ−FETを備えたJ−FET増幅
回路において、第1のJ−FETの負荷として上記増幅
用の第1のJ−FETと同一特性で、かつ第1のソース
抵抗と同じ値の第2のソース抵抗を有する第2のJ−F
ETを用い、そのゲートと第2のソース抵抗の一端に第
1の抵抗、そのゲートと電圧源との間に第2の抵抗を夫
々接続したことを特徴とするJ−FET増幅回路。
1. A J-FET amplifier circuit comprising a first J-FET for amplification, the source of which is grounded via a first source resistor, wherein a first J-FET for amplification is used as a load of the first J-FET. A second J-F having the same characteristics as the first J-FET and a second source resistance having the same value as the first source resistance.
A J-FET amplifier circuit using ET, wherein the first resistance is connected to one end of the gate and the second source resistance, and the second resistance is connected between the gate and the voltage source.
【請求項2】 前記第1のJ−FETと同一特性で、第
1のソース抵抗と同じ値の第2のソース抵抗を備えた第
3のJ−FETを有し、この第3のJ−FETには前記
第1のJ−FETと同一電流を流すようにし、そのゲー
トと第2のソース抵抗の間に第1の抵抗と同じ値の第3
の抵抗を接続し、そのゲートと第3の抵抗の接続点を、
出力端子に接続したことを特徴とするJ−FET増幅回
路。
2. A third J-FET having a second source resistance having the same characteristics as the first J-FET and having the same value as the first source resistance, the third J-FET being provided. The same current as that of the first J-FET is caused to flow in the FET, and a third resistor having the same value as that of the first resistor is provided between the gate and the second source resistor.
Of the resistor, and the connection point between the gate and the third resistor,
A J-FET amplifier circuit characterized by being connected to an output terminal.
JP25450594A 1994-09-22 1994-09-22 J-fet amplifier circuit Pending JPH0897644A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25450594A JPH0897644A (en) 1994-09-22 1994-09-22 J-fet amplifier circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25450594A JPH0897644A (en) 1994-09-22 1994-09-22 J-fet amplifier circuit

Publications (1)

Publication Number Publication Date
JPH0897644A true JPH0897644A (en) 1996-04-12

Family

ID=17265993

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25450594A Pending JPH0897644A (en) 1994-09-22 1994-09-22 J-fet amplifier circuit

Country Status (1)

Country Link
JP (1) JPH0897644A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007016552A1 (en) * 2005-08-02 2007-02-08 Qualcomm Incorporated Amplifier with active post-distortion linearization
WO2009026413A1 (en) * 2007-08-21 2009-02-26 Qualcomm Incorporated Active circuits with load linearization
US7889007B2 (en) 2005-08-02 2011-02-15 Qualcomm, Incorporated Differential amplifier with active post-distortion linearization
WO2020145585A1 (en) * 2019-01-07 2020-07-16 Samsung Electronics Co., Ltd. Amplifier with post-distortion linearization

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007016552A1 (en) * 2005-08-02 2007-02-08 Qualcomm Incorporated Amplifier with active post-distortion linearization
US7889007B2 (en) 2005-08-02 2011-02-15 Qualcomm, Incorporated Differential amplifier with active post-distortion linearization
US7902925B2 (en) 2005-08-02 2011-03-08 Qualcomm, Incorporated Amplifier with active post-distortion linearization
WO2009026413A1 (en) * 2007-08-21 2009-02-26 Qualcomm Incorporated Active circuits with load linearization
US8035447B2 (en) 2007-08-21 2011-10-11 Qualcomm, Incorporated Active circuits with load linearization
WO2020145585A1 (en) * 2019-01-07 2020-07-16 Samsung Electronics Co., Ltd. Amplifier with post-distortion linearization
US11128265B2 (en) 2019-01-07 2021-09-21 Samsung Electronics Co., Ltd. Amplifier with post-distortion linearization

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