JPH088462A - Semiconductor light emitting device and its manufacture - Google Patents

Abstract

PURPOSE:To provide a semiconductor light emitting device and its manufacturing method capable of improving light output efficiency of an incoherent light emitting diode element as well as giving the directivity to the light emitted from the element for increasing the light output efficiency of the whole device. CONSTITUTION:Within the semiconductor light emitting device, the light emitting diode element LED having a light emitting region 3 emitting a specific light and a light leading means 6 leading the light to a specific direction are formed on the same semiconductor substrate 1 while the LED is composed of the formation of the first and second conductive layers 2 and 4 in a specific patterns to be respectively formed. Furthermore, the light leading means 6 is composed of a reflecting layer 6 selectively formed so as to encircle the light emitting region 3 of the LED.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device and a manufacturing method thereof, for example, a semiconductor light emitting device suitable as a light source for optical fiber communication and an optical writing system, and a manufacturing method thereof.

[0002]

2. Description of the Related Art Conventionally, a laser diode or a light emitting diode having a small size and a high light emitting efficiency has been generally used as a light source for optical fiber communication and an optical writing system. R & D is actively carried out.

Among them, in particular, the light emitting diode has incoherent output light and is less likely to cause mutual interaction such as interference with each other, as compared with the laser diode. For this reason, it is suitable as a light source for optical fiber communication and optical writing that uses the multiplicity and parallelism of light, but the output light that can be used for the energy injected into the device is very small compared to the laser diode. It becomes a thing. This is because the light emitted from the light emitting diode device has no directivity because it is incoherent, and in a normal light emitting diode device, the light extraction efficiency of the light emitting diode element itself is low, How to improve them is an important issue.

Therefore, conventionally, for example, there is a device in which a predetermined reflecting unit is provided outside the light emitting diode device so that the emitted light has directivity. The light emission used in such a case is known. The size of the diode element is usually on the order of several hundreds of μm, and the reflection unit of the order of several mm is used. Therefore, the beam width of the emitted light obtained is at most a few mm, and when it is considered that this is incident on an optical fiber having a core diameter of 50 to 100 μm used for multimode, the light is emitted from the light emitting diode device. Comparing the width of the light beam and the core diameter of the optical fiber, the width of the light beam becomes one digit larger, and in terms of area, it becomes two digits larger. As a result, less than 1% of the total amount of light emitted from the light emitting diode device can be practically used.

[0005]

From the above description, in order to efficiently enter the light emitted from the light emitting diode device into the optical fiber, the width of the emitted light should be about several hundred μm. However, in order to do so, the light emitting diode device and the reflection unit must be made smaller by one digit or more, respectively, but as a practical matter, in the above method in which the reflection unit or the like is provided outside the light emitting diode device, those conditions are satisfied. Was very difficult to satisfy.

On the other hand, inside the light emitting diode element of the light emitting diode device, a part of the light generated in the active layer which is the light emitting region is usually absorbed again in the active layer before it goes out of the element. Therefore, not all the light generated inside of it goes out. The intensity of re-absorption of light inside the device usually depends on the distance from the light emitting point inside the device to the end face of the device, and increases exponentially as the distance increases. Therefore, in order to reduce the reabsorption of light inside the element and improve the efficiency of extracting light to the outside, it is necessary to make the diameter of the element itself as small as possible.

Further, at the end surface of the light emitting diode element where a predetermined amount of light is emitted, there is a predetermined difference in the refractive index at the boundary surface with the outside thereof, so the light emitted from that end surface. There are some that are reflected at the boundary surface and do not go outside. For example, G
When aAs and air are in contact with each other, about 30% of the light generated in the GaAs is reflected inside, and the light extraction efficiency of the light emitting diode element to the outside is reduced. become.

Therefore, an object of the present invention is to improve the light extraction efficiency of a light emitting diode element in a light emitting diode device that emits incoherent light, and to give the light emitted from the device directivity to the entire device. It is an object of the present invention to provide a semiconductor light emitting device and its manufacturing method capable of improving the light extraction efficiency.

[0009]

In order to achieve the above-mentioned object, the invention according to claim 1 is a semiconductor light-emitting device, which has a light-emitting diode element having a light-emitting region for emitting a predetermined light, and the light-emitting diode element as described above. A semiconductor light emitting element portion configured by forming light guide means for guiding the light emitted from a light emitting region in a predetermined direction on one main surface side of the same semiconductor substrate, wherein the light emitting diode element comprises A predetermined light emitting region is formed by stacking at least first and second conductive layers formed in a predetermined pattern on one main surface side of the semiconductor substrate,
Further, the light guide means is constituted by a reflective layer having a predetermined reflectance formed so as to surround the light emitting region of the light emitting diode element.

According to a second aspect of the present invention, in the semiconductor light emitting device according to the first aspect, the reflecting layer of the light guiding means has at least a paraboloidal predetermined surface having a focal point in the vicinity of the light emitting diode element. It is formed in.

The invention according to claim 3 is the invention according to claim 1 or 2.
In the semiconductor light emitting device described above, the light emitting diode element is formed in a predetermined shape having a diameter of about several μm to several tens of μm.

According to a fourth aspect of the present invention, in the semiconductor light emitting device according to the first, second or third aspect, a layer having a high refractive index of light is provided so as to cover the light emitting region of the light emitting diode element. It is a thing.

The invention as claimed in claim 5 is as follows.
Alternatively, in the semiconductor light emitting device according to the item 4, a layer having a high refractive index of light is provided between the light emitting region of the light emitting diode element and the light guiding unit.

The invention according to claim 6 is the invention as defined in claims 1, 2 and
In the semiconductor light emitting device described in 3, 4, or 5, a plurality of the semiconductor light emitting element portions are formed on one main surface side of the semiconductor substrate.

According to a seventh aspect of the present invention, in a method of manufacturing a semiconductor light emitting device, a step of forming at least a first and a second conductive layer on one main surface side of a semiconductor substrate to form a predetermined light emitting region, The method includes the steps of patterning the first and second conductive layers into a predetermined pattern, and forming a reflective layer having a predetermined reflectance so as to surround the light emitting region.

[0016]

According to the invention described in claim 1, the semiconductor light emitting element portion in the semiconductor light emitting device has a light emitting diode element having a light emitting region which emits a predetermined light, and the light emitted from the light emitting region of the light emitting diode element. A light guide means for guiding in a predetermined direction is formed on one main surface side of the same semiconductor substrate, and the light emitting diode element of the semiconductor light emitting element section is formed in a predetermined pattern on the one main surface side of the semiconductor substrate. The predetermined light emitting region is formed by laminating at least the first and second conductive layers formed, and the light guiding means is formed so as to surround the light emitting region of the light emitting diode element. The light emitted from the light-emitting region of the light-emitting diode element is efficiently made to have a predetermined reflectivity by being constituted by the reflective layer having the predetermined reflectivity. It is guided to the direction.

According to a second aspect of the present invention, in the semiconductor light emitting device according to the first aspect, the reflection layer of the light guide means has at least a paraboloidal predetermined surface having a focal point in the vicinity of the light emitting diode element. By being formed into
The light emitted from the light emitting region of the light emitting diode element is guided in a predetermined direction very efficiently.

According to a third aspect of the present invention, in the semiconductor light emitting device according to the first or second aspect, the light emitting diode element is formed in a predetermined shape having a diameter of about several μm to several tens of μm. Reabsorption of light inside the light emitting diode device is reduced. Further, the light emitting diode element is substantially regarded as a point light source with respect to the reflective layer having the paraboloid.

According to a fourth aspect of the invention, in the semiconductor light emitting device according to the first, second or third aspect, a layer having a refractive index higher than that of air is provided so as to cover the light emitting region of the light emitting diode element. As a result, the reflection of light inside the light emitting diode element is reduced.

According to the invention of claim 5, claims 1, 2 and
In the semiconductor light emitting device according to 3 or 4, at least a layer having a refractive index of light higher than that of air is provided between the light emitting region of the light emitting diode element and the light guiding means, and thus a predetermined layer is provided therebetween. Is formed.

According to a sixth aspect of the present invention, the first, second, and
In the semiconductor light emitting device described in 3, 4, or 5, by forming a plurality of the semiconductor light emitting element portions on the one main surface side of the semiconductor substrate, a high light extraction efficiency can be obtained with a low injection current.

According to a seventh aspect of the present invention, in the method for manufacturing a semiconductor light emitting device, a step of forming at least first and second conductive layers on one main surface side of the semiconductor substrate to form a predetermined light emitting region, Since the semiconductor light emitting device has a step of patterning the first and second conductive layers into a predetermined pattern and a step of forming a reflective layer having a predetermined reflectance so as to surround the light emitting region, Easily realized.

[0023]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A specific example of the present invention will be described below with reference to the drawings. 1 to 3 show a first embodiment of a semiconductor light emitting device and a method for manufacturing the same according to the present invention, and FIG. 1 is a plan view of a semiconductor light emitting device showing the first embodiment of the present invention. 2 is a sectional view taken along the line II-II, and FIG. 3 is a sectional view sequentially showing the main steps of the method for manufacturing the semiconductor light emitting device of this embodiment.

As shown in FIG. 2, N-type Al (x) Ga (y) As is formed on one main surface of the semiconductor substrate 1 made of N-type GaAs.
A first clad layer 2 made of (X = 0.4, Y = 0.6) is formed, and an active layer 3 made of GaAs is formed on the clad layer 2 as a light emitting region. P-type Al (x) Ga (y) As (X = 0.4, Y =
The second clad layer 4 made of 0.6) is formed in a predetermined pattern. Furthermore, a cap layer 5 made of P-type GaAs is provided on the second cladding layer 3, and the first cladding layer 2,
A dielectric multilayer film 7 made of SiO ₂ / SiN is provided in a thickness of 1 μm so as to cover the active layer 3, the second clad layer 4, and the cap layer 5 so as to cover these layers. A light emitting diode element LED is formed by the respective layer configurations described above, and the light emitting diode element LED is formed in a substantially columnar shape having a diameter of 5 to 50 μm as shown in FIG.

A P-side electrode layer 8 made of Al is provided on the cap layer 5 of this light-emitting diode element LED, and an Au-Ge / N layer is formed on the opposite side of the semiconductor substrate.
N-side electrode layers 9 made of i / Au are provided. On the side surface of each of the semiconductor layers 2, 3, 4 and 5 other than the light emitting diode element LED, a reflection layer 6 made of Al as a light guide means for reflecting light and guiding it in a predetermined direction.
Is formed so as to surround the active layer 3 of the LED, and the reflection layer 6 has an opening 10 in the light reflection direction indicated by L in the figure with the LED as the focus, as shown in FIG. It is formed like an object. Furthermore, the shape of the semiconductor substrate 1 viewed from above is the light emitting diode element LED.
The reflective layer 6 has a parabolic shape with a focal point in the vicinity.
Is provided. As described above, the light emitting diode element portion 11 includes the light emitting diode element LED and the reflective layer 6 formed so as to surround the active layer 3 as the light emitting region.
Is configured.

Next, a method of manufacturing the semiconductor light emitting device of this embodiment will be described with reference to FIGS.
First, as shown in FIG. 3A, MOCVD (Metal Organic) is formed on one main surface of the N-type semiconductor substrate 1.
Chemical Vapor Deposition
n) method, N-type Al (x) Ga (y) As (X = 0.
4, Y = 0.6) layer 2 having a thickness of 1.5 μm, GaAs layer 3
With a thickness of 0.1 μm and P-type Al (x) Ga (y) As (X =
0.4, Y = 0.6) Layer 4 with a thickness of 1.5 μm, P-type G
The aAs layer 5 is sequentially epitaxially grown to a thickness of 0.3 μm to form each layer thereof.

Then, by a dry etching method, as shown in FIG.
As shown in FIG. 1B and FIG. 1, by performing a predetermined patterning selectively, the first columnar shape of 5 to 10 μm is formed.
LE, which is to form a light emitting diode element LED including a clad layer 2, an active layer 3, a second clad layer 4 and a cap layer 5, and a reflective layer 6 as a light guide means.
A parabolic region M having D as a focal point is selectively formed.
After that, as shown in FIG. 3C, a reflective layer 6 having a thickness of 1 μm is selectively formed in the region M by a sputtering method, and further, the light emitting diode element L is formed by an EB vapor deposition method.
At the end face of the ED, the first cladding layer 2, the active layer 3,
SiO over the second cladding layer 4 and the cap layer 4
_A dielectric multilayer film 7 made of ₂ / SiN is formed to a thickness of 1 μm.

Then, as shown in FIG. 3D, Al is formed on the upper portion of the cap layer 5 in the light emitting diode element LED.
Of the semiconductor light emitting device of the present embodiment by forming a P-side electrode layer 8 made of, and further forming an N-side electrode layer 9 made of Au—Ge / Ni / Au on the opposite side of the semiconductor substrate. Is formed.

As described above, according to the semiconductor light emitting device and the method of manufacturing the same of the present embodiment, the light emitting diode element LED of the semiconductor light emitting element portion 11 in the semiconductor light emitting device.
However, an N-type clad layer 2 as a first conductive layer and a P-type clad layer 4 as a second conductive layer, which are formed in a substantially cylindrical shape having a diameter of 5 to 10 μm on one main surface of the semiconductor substrate 1, are formed. By stacking each of them, the active layer 3 as a light emitting region
And a light emitting diode element L
Since the light guide means is constituted by the reflective layer 6 having a predetermined reflectance which is selectively formed so as to surround the active layer 3 of the ED, the light emitted from the active layer 3 of the light emitting diode element LED can be efficiently emitted. It can be guided in the direction indicated by L in FIG. Therefore, high directivity can be obtained in the L direction, and the light extraction efficiency can be improved. Moreover, since the light emitting diode element LED and the reflection layer 6 as the light guide means are formed on the same substrate 1, the output light of the semiconductor light emitting device can be output without providing a reflection unit or the like as in the conventional case. It is possible to obtain a light output with a very high directivity and a width of several hundreds of μm.

The light emitting diode element LED has a diameter of 5
Since it is formed in a substantially columnar shape of 10 μm, it is possible to reduce the diameter thereof and reduce the reabsorption of light inside the light emitting diode element. Therefore, even when operated with a low injection current, the light generated in the light emitting diode element LED can be efficiently extracted to the outside, and the light extraction efficiency of the element itself can be improved. Further, since the reflective layer 6 is formed so as to have a paraboloid of revolution whose focus is in the vicinity of the light emitting diode element LED, the light emitting diode element LED is substantially formed with respect to the reflective layer 6 having the paraboloid of revolution. Can be regarded as a point light source, and its L
The light emitted from the ED can be directed very efficiently in the L direction. In addition, the light emitting diode element LE
Since the dielectric multilayer film 7 layer of SiO ₂ / SiN having a higher refractive index of light than air is provided so as to cover the active layer 3 of D, the reflection of light to the inside of the light emitting diode element can be reduced. . Therefore, the light generated in the light emitting diode element LED can be efficiently extracted to the outside, and the light extraction efficiency of the element itself can be improved.

Here, considering the element size of the light emitting diode LED in the semiconductor light emitting device of this embodiment,
The lower limit of the element size is limited by the emission wavelength of the LED, and the upper limit thereof is limited by the absorption coefficient of light in the light emitting portion. Therefore, the lower limit of the element size must be set to a value sufficiently larger than the emission wavelength, and the upper limit of the element size is the distance 1 / e at which the light intensity is 1 / e when the absorption coefficient of light is α. It is regulated by α, or the smaller value of the core diameter of the optical fiber and the like. Therefore, the diameter of the LED is about 5 μm, which is sufficiently larger than the emission wavelength, to about 50 μm, which is smaller than the core diameter of the optical fiber, or about 40 μm, which is about half of the interval 84.6 μm corresponding to 300 dpi in an optical printer. Preferably there is. Therefore, in the LED of the present embodiment, when the absorption coefficient of the light emitting portion is set to about α = 800 cm −1, the lower limit of the diameter is about 5 μm and the upper limit is 1 / α = the distance from the center of the LED. It is preferably about 25 μm, which is 12.5 μm. The light source for an optical printer preferably has an LED diameter of about 5 to 40 μm, and the light source for an optical fiber preferably has a diameter of about 10 to 50 μm.

Next, a semiconductor light emitting device showing a second embodiment of the present invention will be described below with reference to FIGS. FIG. 4 is a plan view of the semiconductor light emitting device of this embodiment, and FIG.
Is a cross-sectional view taken along the line VV, and FIG. 6 is a cross-sectional view sequentially showing the main steps of the method for manufacturing the semiconductor light emitting device of this embodiment. Since the basic structure is the same as that of the first embodiment described above, for convenience of description, the same reference numerals are given and the description thereof is omitted. The difference from the first embodiment is that, as shown in FIGS. 4 and 5, instead of providing the dielectric multilayer film 7 on the side surface of the light emitting diode element LED, the refractive index of air is higher than that of air between the LED and the reflective layer 6. That is, the dielectric layer 17 made of SiO ₂ having a high temperature is provided.

The method of manufacturing the semiconductor light emitting device of this embodiment is as follows.
As shown in FIG. 6A, after performing predetermined patterning by a dry etching method to selectively form the LED and the reflection layer forming region M, as in the first embodiment, LE is used.
The dielectric multi-layer film 7 is not formed on the side surface of D, and then, as shown in FIG.
As shown in (b), a dielectric layer 17 is formed by embedding a dielectric material made of SiO ₂ between the LED and the reflective layer 6 by an etch back method.

As described above, according to the semiconductor light emitting device and the method of manufacturing the same of the present embodiment, the light emitting diode element LED and the reflection layer 6 are provided with the advantages of the same structure as the first embodiment. Since the dielectric layer 17 having a higher refractive index of light than that of air is provided between and, a light waveguide can be formed between them. Therefore, the light emitted from the light emitting diode element LED can be guided more reliably in the L direction in the drawing, which is more convenient for improving the directivity of the light and improving the light extraction efficiency.

Next, a semiconductor light emitting device showing a third embodiment of the present invention will be described with reference to FIGS. 7 and 8. Since the basic configuration is the same as each of the above-described examples, for convenience of description, the same reference numerals are given and the description thereof is omitted. In the semiconductor light emitting device of this embodiment, as shown in FIGS.
Light emitting diode element L formed in the same manner as in the embodiment of
A semiconductor light emitting element portion 11a composed of ED1 and a reflective layer 6a, a semiconductor light emitting element portion 11b similarly composed of a light emitting diode element LED2 and a reflective layer 6b, and a semiconductor light emitting element composed of a light emitting diode element LED and a reflective layer 6c. The element portions 11c are respectively the semiconductor substrate 1
It is formed in an array on the top.

As described above, the semiconductor light emitting device of this embodiment has the same advantages as those of the first embodiment described above, and is composed of the light emitting diode element LED1 and the reflection layer 6a. The semiconductor light emitting element portion 11a, the semiconductor light emitting element portion 11b formed by the light emitting diode element LED2 and the reflection layer 6b, and the semiconductor light emitting element portion 11c formed by the light emitting diode element LED and the reflection layer 6c are respectively placed on the semiconductor substrate 1. Since they are formed in an array, an extremely high light extraction efficiency can be obtained with a low injection current. As a result, for example, it is possible to easily obtain an outgoing light flux having a width of about several hundred μm, which is suitable for optical fiber communication and the like. Further, in the present embodiment, three semiconductor light emitting element portions each including a light emitting diode element and a reflection layer as a light guiding means are formed on the same substrate in an array form. The semiconductor light emitting device of the present embodiment can be realized very easily without strict position adjustment between elements.

FIGS. 9A to 9C show a semiconductor light emitting device and a method of manufacturing the same according to a fourth embodiment of the present invention. In the present embodiment also, for convenience of explanation, the above description is given. Constituent elements similar to those of the above embodiment are designated by the same reference numerals and the description thereof will be omitted.

A method of manufacturing the semiconductor light emitting device of this embodiment will be described. As shown in FIG. 9A, an N type AlGaAs layer 2 serving as a first cladding layer is formed on an N type semiconductor substrate 1. An N-type GaAs layer 3 serving as an active layer, a P-type AlGaAs layer 4 serving as a second cladding layer, and a P-type GaAs layer 5 serving as a cap layer are sequentially formed and then selectively patterned to form a light emitting diode. After forming the element LED and the reflection layer forming region M, as shown in FIG. 9B, a SiO ₂ layer 16 is deposited on the entire surface, and then, as shown in FIG. 9C, selective patterning is performed. By doing so, the reflective layer 16 is formed, and further the dielectric multilayer film 7 is formed on the side surface of the LED. After that, by forming each electrode layer in the same manner as in the first embodiment, the semiconductor light emitting device of this embodiment is completed.

As described above, according to the semiconductor light emitting device of the present embodiment, each of the advantages of each structure similar to those of the first embodiment described above is obtained, and in the present embodiment, SiO 2 is used.
_Since the reflective layer 16 is formed by using _two layers, the semiconductor light emitting device of the present invention can be realized more easily in the same step of forming the light emitting diode element LED without special steps such as sputtering. it can.

Although the present invention has been illustrated above, the present invention is not limited to the above-described embodiments, and various modifications can be made based on the technical idea of the present invention. For example, in each of the above-described embodiments, the side surface of the light emitting diode element LED on the side opposite to the opening 10 side of the reflective layer 7 is a region that cannot actually contribute to the light output, so that a suitable wiring layer is provided in this region. It is possible to increase the amount of current injected into the LED and effectively increase the light output from the LED by providing such elements.

The shape of the light-emitting diode element is not limited to the cylindrical shape, and may be formed in an appropriate shape such as a square shape, and the layer structure thereof may be at least the first and second conductive layers. , Can be changed as appropriate. As the light guide means, in addition to the reflection layer 7 and the like in the above-described embodiment, for example, a predetermined waveguide using a configuration substantially similar to that of an optical fiber can be formed. Further, the shape of the reflective layer 7 can be appropriately changed,
The layer structure and the like may be configured by using materials having different reflectivities, and the layer structure of the reflective layer 7 and the like is not limited to one layer, and for example, a multilayer structure is formed by changing the refractive index of each layer. It can be modified appropriately. As the material of the reflective layer 7, various metals other than Al can be used, and besides these metals, a dielectric material such as SiO ₂ or SiN can be appropriately adopted. The reflectance of the material used for the reflective layer 7 etc. is
The higher it is, the better, but it is preferably 30% or more, and the value is preferably set appropriately according to the material used for the active layer as the light emitting region in the light emitting diode element LED. When a material such as SiO ₂ is used, for example, a high refractive index material such as P or Ge, or B
An appropriate refractive index can be set by appropriately adding a low refractive index material such as F or F. In addition, as described above, when the light emitting element portions are provided on a plurality of substrates, they may be formed in a row and in an array, for example, in a zigzag shape, and the number may be an appropriate number of 2 or more. . It is to be noted that any kind of semiconductor material can be used, and the conductivity type of each semiconductor layer described above can be appropriately changed.

[0042]

According to the first and second aspects of the present invention, in the semiconductor light emitting device, the light emitted from the light emitting region of the light emitting diode element can be efficiently guided in a predetermined direction, so that the light extraction efficiency is improved. Can be improved.

According to the third aspect of the present invention, in the semiconductor light emitting device, reabsorption of light inside the light emitting diode element can be reduced, so that the light generated inside the element can be efficiently extracted to the outside, and The light extraction efficiency of itself can be improved. Further, since the light emitting diode element can be regarded as a point light source substantially with respect to the reflective layer having a parabolic surface, it is possible to guide light in a predetermined direction very efficiently.

According to the invention described in claim 4, in the semiconductor light emitting device, since the reflection of light to the inside of the light emitting diode element can be reduced, the light generated inside the element can be efficiently extracted to the outside. The light extraction efficiency of the device itself can be improved.

According to the fifth aspect of the invention, in the semiconductor light emitting device, since a predetermined waveguide can be formed between the light emitting region and the light guide means, it is possible to guide light in a predetermined direction very efficiently. It is possible to further improve the light extraction efficiency.

According to the sixth aspect of the invention, in the semiconductor light emitting device, it is possible to obtain a very high light extraction efficiency even with a low injection current, so that it is possible to obtain output light with a desired luminous flux width.

According to the seventh aspect of the invention, in the method for manufacturing a semiconductor light emitting device, a semiconductor light emitting device having each of the above advantages can be easily manufactured.

[Brief description of drawings]

FIG. 1 is a plan view of a semiconductor light emitting device showing a first embodiment of the present invention.

FIG. 2 is a sectional view taken along line II-II in FIG.

FIG. 3 is a cross-sectional view showing the main steps of the method for manufacturing the semiconductor light emitting device according to the first embodiment of the present invention.

FIG. 4 is a plan view of a semiconductor light emitting device showing a second embodiment of the present invention.

5 is a cross-sectional view taken along the line VV in FIG.

FIG. 6 is a cross-sectional view showing the main steps of a method for manufacturing a semiconductor light emitting device showing a second embodiment of the present invention.

FIG. 7 is a plan view of a semiconductor light emitting device showing a third embodiment of the present invention.

8 is a cross-sectional view taken along the line VIII-VIII in FIG.

FIG. 9 is a cross-sectional view showing the main steps of a method for manufacturing a semiconductor light emitting device showing a fourth embodiment of the present invention.

[Explanation of symbols]

1 Semiconductor Substrate 2 First Conductive Layer 3 Active Layer (Light Emitting Area) 4 Second Conductive Layer 5 Cap Layer 6, 6a, 6b, 6c, 16 Reflective Layer 7 Dielectric Multilayer Film 8, 9 Electrode Layer 10 Opening 11 , 11a, 11b, 11c Semiconductor light emitting element section 17 Dielectric layer LED, LED1, LED2, LED3 Light emitting diode element

Claims (7)

[Claims] 1. A light emitting diode element having a light emitting region for emitting a predetermined light and a light guiding means for guiding the light emitted from the light emitting region of the light emitting diode element in a predetermined direction are mainly formed on the same semiconductor substrate. A semiconductor light emitting device having a semiconductor light emitting element portion formed on a surface side, wherein at least first and second conductive elements in which the light emitting diode element is formed in a predetermined pattern on a main surface side of the semiconductor substrate. It is configured to form a predetermined light emitting region by stacking layers, and the light guide means is formed by a reflective layer having a predetermined reflectance formed so as to surround the light emitting region of the light emitting diode element. Semiconductor light emitting device. 2. The semiconductor light emitting device according to claim 1,
A semiconductor light emitting device, wherein the reflection layer of the light guiding means is formed to have at least a predetermined parabolic surface whose focal point is in the vicinity of the light emitting diode element. 3. The semiconductor light emitting device according to claim 1, wherein the light emitting diode element has a size of several μm to several tens μm.
A semiconductor light-emitting device formed in a predetermined shape having a diameter of the order. 4. The semiconductor light emitting device according to claim 1, wherein a layer having a refractive index of light at least higher than that of air is provided so as to cover the light emitting region of the light emitting diode element. . 5. The semiconductor light emitting device according to claim 1, 2, 3 or 4, wherein a layer having a refractive index of light higher than that of air is provided between the light emitting region of the light emitting diode element and the light guiding means. Semiconductor light emitting device. 6. The semiconductor light emitting device according to claim 1, 2, 3, 4 or 5, wherein a plurality of said semiconductor light emitting element portions are provided on one main surface side of said semiconductor substrate. 7. A step of forming at least first and second conductive layers on a main surface side of a semiconductor substrate to form a predetermined light emitting region, and patterning the first and second conductive layers in a predetermined pattern. And a step of forming a reflective layer having a predetermined reflectance so as to surround the light emitting region.