JPH0883789A - Micromachining method - Google Patents

Abstract

PURPOSE: To accurately form a groove nanometer order in wide on a resist film on a substrate by the probe of the cantilever of an interatomic power microscope. CONSTITUTION: A resist film 22 20nm thick is formed on a silicon substrate 20 via an SiO2 film 21. After the substrate 20 is held at 40-80 deg.C to pre-bake the film 22, the substrate 20 is horizontally moved in a state that the probe 12 of a cantilever is pressed to the film 22 by a predetermined pressure to form a resist pattern having a recess 22a on the film 22. Thereafter, the substrate 20 is held at a predetermined temperature, and the film 22 formed with the groove 22a is post-baked. With the film 22 as a mask, the film 21 is etched, and then the film 22 is removed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention utilizes the shape of the tip of a cantilever probe of an atomic force microscope to stably and precisely perform fine processing on the order of nanometers on any substrate including an insulating layer. The present invention relates to a fine processing method that can be performed.

[0002]

2. Description of the Related Art In recent years, an atomic force microscope (AF) has been used as an apparatus for observing irregularities on a solid surface with an atomic resolution.
M) has been developed. Hereinafter, referring to FIG.
A conventional micromachining method using M and AFM will be described.

In FIG. 1, reference numeral 1 denotes a first piezoelectric body which moves a sample table 4 on which a sample 5 is placed in the X direction on a horizontal plane, and 2 denotes a second piezoelectric body which moves the sample table 4 in the Y direction on a horizontal plane. Body, 3
Is a third piezoelectric body that moves the sample table 4 in the vertical Z direction, 6 is a cantilever, 7 is a semiconductor laser that emits laser light with an output of 5 mW, and 8 is cantilever 6 that emits laser light emitted from the semiconductor laser 7. A condensing lens for concentrating light on the upper part, 9 is a two-divided photodiode for detecting the laser beam reflected from the cantilever 6, 10 is a control signal generating circuit, 11 is a piezoelectric body driving device, 12 is the cantilever 6
Is a probe provided at the tip of the computer, and 13 is a computer.
The first, second, and third piezoelectric bodies 1, 2, and 3 that can move the sample table 4 in three directions of X, Y, and Z directions constitute a tripod-type fine movement mechanism. Also,
An optical lever is constituted by the semiconductor laser 7 and the two-part photodiode 9. The optical lever measures the displacement (bending) of the cantilever 6 and detects the force converted from the spring constant of the cantilever 6. , The force acting between the sample 5 and the probe 12 is detected. Further, the distance between the sample 5 and the cantilever 6 is controlled by applying a control voltage to the third piezoelectric body 3 using the control signal generating circuit 10 and the piezoelectric body driving device 11.

In the AFM, in order to detect a minute force, a cantilever 6 having a probe 12 at the tip and having a length of about 100 μm is used. When the sample 5 is brought close to the probe 12, the probe 12 and the sample 5 are moved. The cantilever 6 is bent by the interatomic force acting between and. The third piezoelectric element 3 is controlled by a control voltage output from the piezoelectric element driving device 11 through the control signal generation circuit 10 so that the amount of deflection is constant. The first and second piezoelectric elements 1 and 2 are controlled by a control voltage output from the piezoelectric element driving device 11 so that the probe 12 scans along the surface of the sample 5. The control amount in the feedback control performed so that the amount of bending of the cantilever 6 is constant corresponds to the unevenness of the surface of the sample 5, and an AFM image can be obtained by imaging this control amount by the computer 13 or the like. is there. The amount of bending of the cantilever 6 is measured by the displacement measuring unit,
In addition to the above-described optical lever, there is a displacement measuring unit that measures by a method such as laser interference or tunnel current.

The resolution of the AFM depends on the tip curvature radius and the tip angle of the probe 12, and the smaller these are, the higher the resolution is. At present, a probe having a radius of curvature of several hundred angstroms and a tip angle of several degrees has been manufactured, and is used for observing a fine structure on a sample surface (Japanese Patent Application No. Hei.
-200606).

[0006] By the way, in the fine processing using the AFM, a voltage is applied between the conductive probe and the substrate, and the property of the portion of the conductive sample on the substrate where the voltage is applied is changed. A method of developing and removing a changed portion is known.

However, in order to manufacture a conductive probe, it is necessary to deposit a metal such as gold or titanium to a thickness of several hundred angstroms, and the radius of curvature of the tip of the conductive probe becomes very large. Therefore, fine processing on the order of nanometers is very difficult. Further, since it is a method of applying a voltage, it is necessary to use a conductive material as a sample, and it is difficult to finely process an insulator.

[0008] Therefore, J. Vac. Scl. Techn
ol. B Vol. 12, 1994, a method of forming a concave groove in a resist film by moving the substrate horizontally while pressing a probe of a cantilever of an atomic force microscope against the resist film formed on the substrate has been proposed. There is.

[0009]

However, the inventor of the present application moves the substrate in the horizontal direction while pressing the cantilever probe against the resist film formed on the substrate, and forms a concave groove in the resist film. When a resist pattern was formed, a resist pattern composed of concave grooves could not be formed accurately.

In view of the above, the present invention relates to a method of forming a resist pattern comprising concave grooves in a resist film by moving the substrate horizontally while pressing a cantilever probe against the resist film formed on the substrate. It is another object of the present invention to accurately form a resist pattern including a concave groove having a width on the order of nanometers.

[0011]

According to the present invention, after a resist film on a substrate is pre-baked at a predetermined temperature, a resist pattern is formed on the resist film by a probe of a cantilever. It has been found that by performing baking, a register pattern composed of concave grooves can be formed with high accuracy, and the present invention has been made based on this finding.

Specifically, the solution means taken by the invention of claim 1 is a fine processing method, which comprises: a resist film forming step of forming a resist film by applying a resist on a substrate;
A pre-baking step of pre-baking the resist film on the substrate by holding it at a temperature of 0 ° C. to 80 ° C., and a cantilever probe of an atomic force microscope with a predetermined pressing force on the pre-baked resist film. A resist pattern forming step of horizontally moving the substrate in a pressed state to form a resist pattern consisting of concave grooves in a prebaked resist film, and a post-baking step of post-baking the resist film on which the resist pattern is formed. And a step of etching the substrate using the post-baked resist film as a mask.

According to a second aspect of the present invention, there is provided a fine processing method comprising the steps of: applying a resist on a substrate to form a resist film;
A pre-baking step of pre-baking the resist film on the substrate by holding it at a temperature of 0 ° C. to 80 ° C., and a cantilever probe of an atomic force microscope with a predetermined pressing force on the pre-baked resist film. A resist pattern forming step of horizontally moving the substrate in a pressed state to form a resist pattern consisting of concave grooves in a prebaked resist film, and a post-baking step of post-baking the resist film on which the resist pattern is formed. And a plating film deposition step of immersing the substrate in an aqueous electrolyte solution and depositing an electrolytic plating film on a portion of the surface of the substrate exposed to the resist pattern.

According to a third aspect of the present invention, there is provided a fine processing method, which comprises a step of depositing a catalyst layer for electroless plating on a substrate, and a step of applying a resist on the catalyst layer. A resist film forming step of forming a resist film, a pre-baking step of pre-baking the resist film on the substrate by holding the substrate at a temperature of 40 ° C. to 80 ° C., and an atom on the pre-baked resist film. A resist pattern forming step of forming a resist pattern consisting of concave grooves in the prebaked resist film by moving the substrate in a horizontal direction while pressing the probe of the cantilever of the atomic force microscope with a predetermined pressing force; A post-baking step of post-baking a resist film having a resist pattern formed thereon, and immersing the substrate in an electroless plating solution It is an arrangement and a plating film depositing step of depositing an electroless plated film on the portion exposed to the resist pattern at the surface.

According to a fourth aspect of the present invention, the film thickness of the resist film formed in the resist film forming step of the first to third aspects is 30 nm or less.

According to a fifth aspect of the present invention, the resist pattern forming step of the first to fourth aspects is performed while the substrate is immersed in water.

[0017]

According to the constitution of the first to third aspects, the substrate is kept at a temperature of 40.degree.
In order to pre-bake the resist film on the substrate by holding it at a temperature of 0 ° C., the substrate was moved in the horizontal direction while pressing the cantilever probe against the resist film to form a concave groove. Since the situation where the width of the concave groove changes due to the resist film closing the concave groove again or the probe being worn can be avoided, the concave groove can be accurately formed in the resist film.

According to the structure of the fourth aspect, since the thickness of the resist film formed in the resist film forming step is 30 nm or less, a large force is not required for forming the concave groove.

According to the fifth aspect of the present invention, since the resist pattern forming step is performed while the substrate is immersed in water, the shaved resist material is not dispersed in water and does not remain in the concave grooves.

[0020]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 shows a schematic configuration of an atomic force microscope used in a micromachining method according to each embodiment of the present invention.
Since the structure and operation of the atomic force microscope are the same as those of the conventional one, the description of the atomic force microscope is omitted, but the shape of the probe 12 will be briefly described.
The shape of the probe 12 may be a quadrangular pyramid or a cone.
Is preferably about 70 degrees. In each of the following examples, a quadrangular pyramid probe 12 having a tip angle of 70 degrees was used.

(First Embodiment) The first embodiment will be described below.
An etching method performed on the SiO ₂ film on the silicon substrate using the AFM will be described with reference to FIG.

First, as shown in FIG. 2A, after a SiO ₂ film 21 which is a thermal oxide film is formed on a silicon substrate 20, a resist is spin-coated on the SiO ₂ film 21 to a thickness of 20 nm. Is applied to form a resist film 22. The type of the resist is not particularly limited, and may be a photoresist, an electron beam resist such as PGMA or PMMA, an X-ray resist, or a SAM (self-assembly).
An embedded monolayer film or the like can be used.

Next, the silicon substrate 20 is placed at 40 ° C. to 80 ° C.
After pre-baking the resist film 22 by holding the substrate at the temperature shown in FIG. 2, the silicon substrate 20 is moved horizontally while the probe 12 of the cantilever 6 is pressed against the resist film 22 as shown in FIG. Move to resist film 22
Then, a resist pattern including a concave groove is formed.

The method of forming the resist pattern will be described in detail below.

First, the silicon substrate 20 is placed on the sample table 4 so that the center of the resist film 22 is located directly below the probe 12. Thereafter, the voltage applied to the third piezoelectric body 3 is gradually increased by the piezoelectric body driving device 11, and while the resist film 22 is brought close to the probe 12, the force that the cantilever 6 receives from the resist film 22 by the two-divided photodiode 9. Was measured. When the voltage applied to the third piezoelectric body 3 is further increased after the probe 12 contacts the resist film 22, the probe 12 bites into the resist film 22, and finally the tip of the probe 12 becomes the SiO ₂ film 21. Here, the approach between the resist film 22 and the probe 12 is stopped. In this case, the pressing force with which the probe 12 pressed the resist film 22 was 3 × 10 ⁻⁷ N.

Next, while maintaining the above pressing force, a voltage is applied to the first piezoelectric body 1 by the piezoelectric body driving device 11 to move the silicon substrate 20 in the X direction, that is, on the ridge side of the quadrangular pyramid of the probe 12. 2 μm in the direction to form a concave groove 22a having a length of 1 μm in the resist film 22 as shown in FIG. 2C, and then the voltage applied to the third piezoelectric body 3 is reduced,
The pressing force with which the probe 12 presses the resist film 22 is 1 × 10
^{-9 Set to} N. In this state, a voltage is applied to the second piezoelectric body 2 by the piezoelectric body driving device 11 to
After moving in the Y direction by 0 nm, the voltage applied to the third piezoelectric body 3 is increased again, and the probe 12
The pressing force for pressing 2 is set to 3 × 10 ⁻⁷ N. While maintaining the pressing force, the silicon substrate 20 is moved by 1 μm in the X direction to form a concave groove 22 a having a length of 1 μm in parallel with the concave groove processed earlier, and then a voltage applied to the third piezoelectric body 3. And the pressure at which the probe 12 presses the resist film 22 is set to 1 × 10 ⁻⁹ N. In this state, a voltage is applied to the second piezoelectric body 2 by the piezoelectric body drive device 11 to move the silicon substrate 20 again in the Y direction by 50 nm.
The above operation is repeated 10 times to complete the operation for one line.

[0028]

[Table 1]

[Table 1] shows the relationship between the prebaking temperature and the accuracy of the concave groove 22a formed in the resist film 22. Probe 1 when prebaked at room temperature
2. Since the residue of the resist film 22 shaved by Step 2 blocks the concave groove 22a, a precise concave groove 22a could not be obtained. Four
When prebaking at 0 ° C. and at 80 ° C., the residue of the resist film 22 shaved by the probe 12 does not block the concave groove 22a, and the probe 12 is not severely worn. A highly accurate concave groove 22a was obtained. When prebaked at 130 ° C., the probe 12 was heavily worn and the accuracy of the concave groove 22a was poor. Further, when the pre-baking is performed at a temperature higher than 130 ° C., the accuracy of the concave groove 22a is extremely poor because the resist film 22 becomes brittle even if it is dried and the probe 12 is abraded. Therefore, the prebaking temperature is preferably in the range of 40 ° C to 80 ° C.

Next, the silicon substrate 20 is held at a predetermined temperature, and post-baking is performed on the resist film 22 having the concave groove 22a formed therein. The temperature of this post-baking is determined by the resist material constituting the resist film 22.

Next, the silicon substrate 20 is immersed in an etching solution for SiO ₂ for 30 seconds to perform etching on the SiO ₂ film 21, and then the silicon substrate 20 is immersed in a solution for the resist film 22, as shown in FIG. As shown in ()), the resist film 22 is removed.

The silicon substrate 20 having undergone the above steps is returned into the AFM, and the etched portion of the SiO ₂ film is removed from the AFM.
When observed by M, a concave groove 2 having a width of 5 nm and a depth of 10 nm
It was confirmed that ten 1a were formed in parallel.

(Second Embodiment) Hereinafter, as a second embodiment,
A method of depositing an electrolytic plating film on the surface of a silicon substrate using AFM will be described.

First, as shown in FIG. 3A, after the surface of the silicon substrate 30 is further terminated with hydrogen, a resist film 31 having a thickness of 25 nm is formed on the silicon substrate 30 by spin coating.

Next, the silicon substrate 20 is placed at 40 ° C. to 80 ° C.
By pre-baking the resist film 22 by holding the silicon substrate 30 at the temperature of 1, the silicon substrate 30 is moved in the horizontal direction with the probe 12 of the cantilever 6 pressed against the resist film 31, as shown in FIG. 3B. To form a resist pattern having concave grooves on the resist film 31.

The method of forming the resist pattern will be described below.

First, the silicon substrate 30 is placed on the sample stage 4 so that the center of the resist film 31 is located directly below the probe 12. Thereafter, the voltage applied to the third piezoelectric body 3 is gradually increased by the piezoelectric body driving device 11, and while the resist film 31 is brought closer to the probe 12, the force that the cantilever 6 receives from the resist film 31 by the two-divided photodiode 9. To measure. After the contact of the probe 12 with the resist film 31, when the voltage applied to the third piezoelectric body 3 is further increased, the probe 12 bites into the resist film 31, and the tip of the probe 12 finally reaches the silicon substrate 30. Therefore, the approach between the resist film 31 and the probe 12 is stopped here.
In this case, the pressing force with which the probe 12 presses the resist film 31 was 3 × 10 ⁻⁷ N.

Next, while maintaining the above pressing force, a voltage is applied to the first piezoelectric body 1 by the piezoelectric body driving device 11 to move the silicon substrate 20 in the X direction, that is, on the ridge of the quadrangular pyramid of the probe 12. 3 μm in the direction to form a concave groove 31a having a length of 5 μm in the resist film 31 as shown in FIG. 3C, and then the voltage applied to the third piezoelectric body 3 is reduced.
The pressing force with which the probe 12 presses the resist film 31 is set to 1 × 10.
^{-9 Set to} N. After that, the piezoelectric drive device 11
A reverse voltage is applied to the piezoelectric body 1 to match the position of the central portion of the resist film 31 with the position of the probe 12.

In the second embodiment, the relationship between the prebaking temperature and the shape of the concave groove 31a formed in the resist film 31 was also observed. As in the first embodiment, the prebaking temperature was 40 ° C. It has been found that a range within the range of -80 ° C is preferable.

Next, the silicon substrate 30 is held at a predetermined temperature, and post-baking is performed on the resist film 31 in which the concave groove 31a is formed.

Next, the silicon substrate 30 having the resist film 31 in which the concave grooves 31a are formed is immersed in an electrolytic aqueous solution to perform electrolytic plating. In this case, platinum was used for the reference electrode and the counter electrode, and nickel solution was used as the electrolyte aqueous solution. Then, by applying a potential difference of 0.9 V between the counter electrode and the silicon substrate 30, as shown in FIG. 3C, a portion of the silicon substrate 30 exposed in the concave groove 31a of the resist film 31 is exposed. The electrolytic plating film 32 is deposited.

Next, the silicon substrate 30 is covered with a resist film 31.
Then, as shown in FIG. 3D, the resist film 31 is removed.

The silicon substrate 30 after the above steps was returned to the AFM, and the electrolytic plating film 32 formed on the silicon substrate 30 was observed by AFM.
With m, it was confirmed that a plating wire composed of the electrolytic plating film 32 having a height of 2 nm was formed over a length of 5 μm.

(Third Embodiment) Hereinafter, as a third embodiment,
A method of depositing an electroless plated film on the surface of a silicon substrate using AFM will be described.

First, as shown in FIG. 4 (a), after forming the SiO ₂ film 41 on the silicon substrate 40, SiO ₂
A catalyst layer made of palladium is deposited on the film 41.

Next, as shown in FIG. 4B, a resist is applied to a thickness of 15 nm by spin coating to form a resist film 43.

Next, the silicon substrate 20 is heated to 40.degree.
After pre-baking the resist film 43 by holding at a temperature of 2 ° C., the silicon substrate 40 is moved in the horizontal direction while the probe 12 of the cantilever 6 is pressed against the resist film 43 as shown in FIG. Go to Figure 4
As shown in (d), a resist pattern including a concave groove 43a is formed in the resist film 43. The method of forming the resist pattern in the third embodiment is almost the same as that of the second embodiment, except that the silicon substrate 30 is exposed in the second embodiment. The exposed SiO ₂ film 41 is exposed. Since the vertical and horizontal movements of the silicon substrate 40 are the same as those in the second embodiment, their description will be omitted.

In the third embodiment, the relationship between the prebaking temperature and the shape of the concave groove 43a formed in the resist film 43 was also observed. As in the first embodiment, the prebaking temperature was 40 ° C. It has been found that a range within the range of -80 ° C is preferable.

Next, the silicon substrate 40 is held at a predetermined temperature, and post-baking is performed on the resist film 43 in which the concave groove 43a is formed.

Next, the silicon substrate 40 having the resist film 43 in which the concave grooves 43a are formed is immersed in an electroless nickel plating solution to perform electroless plating.
As shown in, the electroless plating film 44 is deposited only on the SiO ₂ film 41 exposed in the concave groove 43a of the resist film 43.

When the silicon substrate 40 on which the above steps have been completed is returned to the AFM and the electroless plating film 44 formed on the silicon substrate 40 is observed by AFM, the electroless plating film 44 having a film thickness of 30 nm is found. It was confirmed that the film was formed over a length of 5 μm.

In the first to third embodiments, the thickness of the resist film is preferably 30 nm or less.
The reason is that when the thickness of the resist film exceeds 30 nm,
This is because a large force is required to form the concave groove, which may damage the underlying silicon substrate or the SiO ₂ film.

Further, in the first to third embodiments,
If a concave groove is formed in the resist film in a state where the silicon substrate is immersed in water, the precision of the concave groove is further improved because the shaved resist is scattered well.

[0054]

According to the fine processing method of the first aspect of the present invention, the cantilever probe is pressed against the resist film in order to pre-bake the resist film while holding the substrate at a temperature of 40 ° C. to 80 ° C. If the concave groove is formed by moving the substrate in the horizontal direction in this state, it is possible to avoid a situation in which the shaved resist film blocks the concave groove or wear the probe to change the width of the concave groove, so that the resist film is The concave groove can be formed with high precision, and etching with a width on the order of nanometers can be realized.

According to the fine processing method according to the second aspect of the present invention, similarly to the first aspect of the present invention, a concave groove can be formed in the resist film with high precision, so that an electrolytic plating film having a width on the order of nanometers can be formed. realizable.

According to the microfabrication method of the third aspect of the present invention, like the first aspect of the present invention, since the concave groove can be formed in the resist film with high precision, the electroless plated film having a width on the order of nanometers. Can be realized.

According to the fine processing method of the fourth aspect of the present invention, since the thickness of the resist film formed in the resist film forming step is 30 nm or less, a large force is not required to form the concave groove. Does not damage the substrate.

According to the fine processing method of the fifth aspect of the present invention, since the resist pattern forming step is performed while the substrate is immersed in water, the scraped resist material is dispersed in water and remains in the concave groove. Therefore, the accuracy of the concave groove is further improved.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram of an atomic force microscope used in each example of the present invention.

FIG. 2 is a cross-sectional view showing each step of the fine processing method according to the first example of the present invention.

FIG. 3 is a sectional view showing each step of a microfabrication method according to a second embodiment of the present invention.

FIG. 4 is a sectional view showing each step of a microfabrication method according to a third embodiment of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 1st piezoelectric body 2 2nd piezoelectric body 3 3rd piezoelectric body 4 Sample stand 5 Sample 6 Cantilever 7 Semiconductor laser 8 Condensing lens 9 2-division photodiode 10 Control signal generation circuit 11 Piezoelectric drive circuit 12 Probe Reference Signs List 13 computer 20 silicon substrate 21 SiO ₂ film 22 resist film 22 a concave groove (resist pattern) 30 silicon substrate 31 resist film 31 a concave groove (resist pattern) 32 electrolytic plating film 40 silicon substrate 41 SiO ₂ film 42 catalyst layer 43 resist film 43 a Concave groove (resist pattern) 44 Electroless plating film

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification number Office reference number FI technical display location H05K 3/06 F 3/18 D 7511-4E // G01N 37/00 G (72) Inventor Yamamoto Shin-ichi 1-4-1, Higashi Tsukuba, Ibaraki Prefectural Institute of Industrial Technology Research Institute for Industrial Technology Interdisciplinary Research Association, Angstrom Technology Research Organization

Claims (5)

[Claims] A resist film forming step of applying a resist on the substrate to form a resist film; and pre-baking the resist film on the substrate by holding the substrate at a temperature of 40 ° C. to 80 ° C. A pre-baking step, and moving the substrate in a horizontal direction while pressing a cantilever probe of an atomic force microscope against the pre-baked resist film with a predetermined pressing force, thereby forming a concave on the pre-baked resist film. A resist pattern forming step of forming a resist pattern formed of a groove; a post-baking step of post-baking the resist film on which the resist pattern is formed; and etching for etching the substrate using the post-baked resist film as a mask. A fine processing method comprising the steps of: 2. A resist film forming step of applying a resist on a substrate to form a resist film, and pre-baking the resist film on the substrate by maintaining the substrate at a temperature of 40 ° C. to 80 ° C. A pre-baking step, and moving the substrate in a horizontal direction while pressing a cantilever probe of an atomic force microscope against the pre-baked resist film with a predetermined pressing force, thereby forming a concave on the pre-baked resist film. A resist pattern forming step of forming a resist pattern composed of grooves, a post-baking step of post-baking the resist film on which the resist pattern is formed, and immersing the substrate in an aqueous electrolyte solution to form the resist on the surface of the substrate. A plating film depositing step of depositing an electrolytic plating film on a portion exposed to the pattern. Microfabrication method comprising. 3. A catalyst layer depositing step of depositing a catalyst layer for electroless plating on a substrate; a resist film forming step of applying a resist on the catalyst layer to form a resist film; A pre-baking step of pre-baking the resist film on the substrate by holding the substrate at a temperature of from about 80 ° C. to about 80 ° C., and applying a cantilever probe of an atomic force microscope to the pre-baked resist film with a predetermined pressure. A resist pattern forming step of moving the substrate in the horizontal direction in a pressed state to form a resist pattern formed of a concave groove in the pre-baked resist film; and a post-baking the resist film on which the resist pattern is formed. Baking step, immersing the substrate in an electroless plating solution, and exposing the resist pattern on the surface of the substrate Microfabrication method characterized by and a plating film depositing step of depositing an electroless plating film with have parts. 4. The fine processing method according to claim 1, wherein the resist film formed in the resist film forming step has a thickness of 30 nm or less. 5. The fine processing method according to claim 1, wherein the resist pattern forming step is performed in a state where the substrate is immersed in water.