JPH08236924A - Device and method for removing semiconductor - Google Patents

Abstract

PURPOSE: To remove free-chip type large semiconductors carrying bumps on their entire surfaces or the packages of the semiconductors by cutting off the bumps by fusion by conducting a platy exothermic resistor, the diameter or thickness of which is made smaller than the height of the bumps. CONSTITUTION: Semiconductor chips or semiconductor packages 1 are connected to a substrate 2 through connecting bumps 3 of solder balls, etc. An exothermic resistor 4, the diameter or thickness of which is made smaller than the height of the bumps 3, is fixed to a holder electrode 5 with exothermic resistor fixing screws 6. A holder 7 holds the electrode 5 and holds and insulates the conductor connecting the electrode 5 to a power source. The holder 7 is attached to an arm 51 connected to an XYZ stage 52, moved to the position of a semiconductor 1, etc., to be mounted by means of the stage 52 and, at the same time, adjusts the height of the resistor 4 so that the resistor 4 can get in between the semiconductor 1, etc., and the substrate 2. The resistor 4 is moved to cut off the connecting bumps 3 by fusion.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a device and method for removing a semiconductor element or a semiconductor package from a semiconductor device, and more particularly to a semiconductor device in which a semiconductor element or the like is connected to the substrate via bumps. Apparatus and method suitable for.

[0002]

2. Description of the Related Art The recent increase in the speed of semiconductor devices has accelerated the densification of semiconductors and packaging. For this reason, semiconductor chips are becoming larger in size, and semiconductors and their packages are often flip-chip type having connection pads on the entire connection surface, and many semiconductors are mounted on a substrate with a low melting point metal such as solder. The number of mounting structures that can be used is increasing. When a defect is detected in some semiconductors in the manufacturing process of such a semiconductor device, it becomes necessary to remove those semiconductors or their packages. For this purpose, it is necessary to heat the connecting portion of one semiconductor or package to its melting point or higher so as not to damage other semiconductor connecting portions. In the conventional case where there is a connecting portion only in the periphery, it was possible to irradiate and heat with infrared rays or the like. In the case of a semiconductor or a small package, it took a long time to heat the entire surface from the back surface.

[0003]

However, when a large semiconductor or package has connection bumps on the entire surface, infrared irradiation from the periphery cannot be applied, and heating from the back also requires a long time. , Damage the connection of surrounding semiconductors. Furthermore, it is very difficult to heat from the back side of a package using resin.

An object of the present invention is to provide a means for removing the large-sized flip chip type semiconductor having bumps on the entire surface thereof or the package thereof.

[0005]

This object can be achieved by energizing a heating resistor having a thickness or diameter smaller than the height of the connecting bump to melt and cut the bump to prevent reattachment. Further, it can be achieved by forming a heated gas flow path between the chip and the substrate and melting the connection portion with the heated gas while applying a pulling load. The removal device and method of the present invention are characterized by any of the following.

(1): A semiconductor removing device for removing a part of a semiconductor or semiconductor package of a semiconductor device in which a semiconductor or a semiconductor package is connected to a substrate through a bump portion by melting the bump and removing it from the substrate, A wire having a diameter smaller than the bump height or a plate-shaped heating resistor having a smaller plate thickness than the bump height is connected between two terminals having a cross-sectional size that can be inserted between two adjacent semiconductors or semiconductor packages.

(2): In (1), the electric circuit of the heat-generating resistor has a semiconductor circuit and a substrate (
Separated from all electrical circuits).
◆ (3): In (1) or (2), the width of the portion inside the terminal of the heating resistor adjacent to the terminal is smaller than the mounting interval of the semiconductor or the semiconductor package.

(4): In (3), the heating resistor has a function of preventing re-fixation of the bump material by providing a slit inside the terminal. ◆ (5): In (3), an insulating film or the like is bonded to the inside of the terminal of the heating resistor. ◆ (6): In (1) or (2), either the ceramic and the resin film, or one of them is bonded to the heating resistor.

(7) A device for removing a part of a semiconductor or semiconductor package of a semiconductor device in which a semiconductor or a semiconductor package is connected to a substrate through a bump portion by melting the bump and removing it from the substrate, Semiconductor or semiconductor package
A flow path that covers only one of the lower surfaces, flows in between one side of the lower surface and the substrate, and flows out between the other opposite side and the substrate, and forms a circulation flow path including this flow path. Hear in the flow path
Have a fan and a fan.

(8): In (7), a mechanism for adsorbing the rear surface of the semiconductor or the semiconductor package to provide a pulling force is provided. (9): Use the semiconductor removing device according to any one of (1) to (8) in a method for removing a semiconductor or a semiconductor package. (10): Manufacturing a semiconductor device using the semiconductor removing device according to any one of (1) to (8) or the removing method according to (9).

[0011]

When the thin wire or foil-shaped conductive heating element connected between the electrodes is energized by controlling the current or voltage, the melting point of the low melting point metal for forming the connection bump of the semiconductor element or the like can be raised. When this is brought into contact with the connection bump, the bump melts and the semiconductor element or the like can be removed from the substrate.
In addition, a gas flow path is formed between the chip and the substrate, and the heating gas is caused to flow through this to improve the heat transfer coefficient, which is applicable before the temperature rises to the temperature at which the connection part of another chip is damaged by heat conduction. The tip can be removed.

[0012]

The present invention will be described below with reference to the drawings of the embodiments.
FIG. 1 is a first embodiment of the present invention. ◆ Board 2 in Figure 1
Further, a semiconductor chip or a semiconductor package 1 is connected by connecting bumps 3 such as solder balls. A heating resistor 4 thinner than the bump height is fixed to the holder-electrode 5 with a heating element fixing screw 6. As a result, it becomes possible to replace the heating element that is easily damaged.

The holder 7 plays a role of fixing the electrode 5 and fixing and insulating a conductor connecting the electrode 5 and a power source. This holder is attached to an arm 51 connected to an XYZ stage 52, moves to the position of a semiconductor or the like to be removed by the XYZ stage, and a heating element is placed between the semiconductor 1 and the substrate 2. Adjust the height to fit. After that, the heating element is moved to melt and cut the connection bump.

In this embodiment, the stainless steel foil is used as the heating element, and the solder does not stick to the heating element. Since the distance between semiconductors and the like is generally small, the electrode can be made longer than the height of the back surface of the semiconductor and the heating element can be screwed above this height to accommodate a smaller semiconductor distance. Further, in this embodiment, the width of the heat generating portion is made larger than the diameter of the bump to prevent re-bonding of the bump-constituting metal.

FIG. 2 shows a second embodiment. Although this figure shows a hand-held type, the same effect can be obtained even when attached to an automatic device. The heating element 4 is made of a material such as stainless steel having poor solder wettability and has a slit 11. Electricity hardly flows to the part with the slit, so that it does not generate heat. Therefore, the bump material melted at the portion without slits is cooled and solidified when touching this portion, and prevents re-adhesion between the substrate and the connection pad such as a semiconductor.

If the width of the non-slit portion is smaller than the mounting interval of the semiconductor or the like, the bending rigidity of the heating element is small,
It can be inserted between the substrate and the semiconductor or the like. The same effect as this slit can be achieved by joining an insulating film or the like to the heating resistor. There are notches 12 on the outside of the electrodes in FIG. 2 to prevent the heating element from shifting. Further, the holder 7 is provided with a heating element tension applying mechanism 13. This is to increase the deformation resistance of the heating element by applying tension to the heating element by expanding the holder through the shafts on both sides with the adjusting screw, which allows insertion between the semiconductor and the substrate. This facilitates and speeds up the melt cutting work of the bump.

FIG. 3 shows a third embodiment. The heating element does not necessarily have to be a conductive material. In FIG. 3, the ceramic 21 is fixed to the conductive heating element 4 with silver solder or the like. As a result, the heat capacity increases and the work becomes smooth. Further, a resin film such as polyimide is provided in the slit portion. This prevents the solder from leaking from the slit. When the heating resistor has good wettability with the bump material, a resin film is provided on both sides to prevent the molten metal from adhering to the heating element.

A fourth embodiment is shown in FIG. In this example, a metal foil having good solder wettability such as nickel is used as the conductive heating element. In this heating element, solder is attached to a wide portion to prevent the molten metal from adhering to the pads of the semiconductor and the substrate.

FIG. 5 shows a fifth embodiment. In this example, a wire is used as the heating element. In this case, it is difficult to prevent the reattachment of the molten metal, so it is necessary to extrude the molten metal between the semiconductor and the substrate, and the wire diameter needs to be larger than the thickness of the foil. .

FIG. 6 shows a sixth embodiment. The present embodiment is an apparatus for blowing hot air onto the connection bumps between the semiconductor 1 and the substrate 2. Inside the flow path 30 is a fan 33 driven by a heater 31 and a motor 32. The inner wall 36 of the flow path is in contact with the upper portion of the semiconductor or the like via the elastic body 34.

The outer wall 35 is in contact with the substrate 2 via an elastic body. The side wall 37 is almost in contact with the side surface of the semiconductor or the like, but at the same time is in contact with the upper surface of the semiconductor or the like and the substrate via the elastic body. As a result, the air sent by the fan is heated by the heater and flows between the semiconductor and the substrate to heat the connection bumps. By circulating the air in this way, the bumps in the flow channel can be rapidly heated, and the semiconductor and the like in the flow channel can be removed without adversely affecting the connection of peripheral semiconductors and the like.

In this embodiment, the suction cup 39 is in contact with the upper surface of the semiconductor or the like, and this suction cup is connected to the flow path to the vacuum pump 40 via the tongue 38. It is possible to prevent the reattachment of the molten metal by heating the semiconductor or the like while pulling it up with this suction cup.

[0023]

According to the present invention, a large-sized semiconductor device having connection bumps on the entire surface and its package can be removed.

[Brief description of drawings]

FIG. 1 is a schematic view of a first embodiment of the present invention.

FIG. 2 is a schematic view of a second embodiment of the present invention.

FIG. 3 is a top view and a sectional view of a heating element according to a third embodiment of the present invention.

FIG. 4 is a top view of a heating element according to a fourth embodiment of the present invention.

FIG. 5 is a schematic view of a fifth embodiment of the present invention.

FIG. 6 is a schematic view of a sixth embodiment of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Semiconductor or semiconductor package, 2 ... Substrate, 3 ... Connection bump, 4 ... Conductive heating element, 5 ... Electrode, 6 ... Heating element fixing screw, 7 ... Holder, 11 ... Slit, 12 Electrode notch, 13 … Heating element tension applying mechanism, 14… Adjusting screw, 21
... ceramic, 22 ... resin film, 30 ... flow path, 31 ... hi
32, motor, 33, fan, 34, elastic body, 35
... channel outer wall, 36 ... channel inner wall, 37 ... channel side wall, 38 ...
Bello, 39 ... Sucker, 40 ... Shinpu pump, 51 ... Arm, 52 ... XYZ stage, 53 ... Current or voltage control device.

Claims (17)

[Claims] 1. A semiconductor removing apparatus for removing a part of a semiconductor or semiconductor package of a semiconductor device in which a semiconductor or a semiconductor package is connected to a substrate through a bump portion from the substrate by melting the bump. A wire having a smaller diameter or a plate-shaped heating resistor having a smaller thickness than the bump height is connected between two terminals having a cross-sectional dimension that can be inserted between two adjacent semiconductors or semiconductor packages. Semiconductor removing device. 2. The semiconductor circuit according to claim 1, wherein the electric circuit of the heating resistor is separated from all the electric circuits of the semiconductor and the substrate (including the ground) except for the heating resistor section. Removal device. 3. The semiconductor removing apparatus according to claim 1, wherein a width of a portion of the heating resistor inside the terminal adjacent to the terminal is smaller than a mounting interval of the semiconductor or the semiconductor package. 4. The semiconductor removing apparatus according to claim 3, wherein a slit is provided inside the terminal of the heating resistor to prevent the re-fixation of the bump material. 5. The semiconductor removing apparatus according to claim 3, wherein an insulating film is bonded to the inside of the terminal of the heating resistor. 6. The semiconductor removing device according to claim 1, wherein the heating resistor is bonded to the ceramic and the resin film, or one of them. 7. An apparatus for removing a part of a semiconductor or a semiconductor package of a semiconductor device in which the semiconductor or the semiconductor package is connected to the substrate through a bump portion from the substrate by melting the bump. Forming a flow path that covers only one of the semiconductor packages and that flows in between one side of the lower surface and the substrate and flows out between the other one side and the substrate that face each other.
A semiconductor removing device characterized by forming a circulation flow path including this flow path and having a heater and a fan in the flow path. 8. The semiconductor removing apparatus according to claim 7, further comprising a mechanism for adsorbing a rear surface of the semiconductor or the semiconductor package to apply a pulling force. 9. A semiconductor removing method for removing a part of a semiconductor or a semiconductor package of a semiconductor device in which a semiconductor or a semiconductor package is connected to a substrate through a bump portion from the substrate by melting the bump. Using a device in which a wire having a smaller diameter or a plate-shaped heating resistor having a smaller thickness than the bump height is connected between two terminals having a cross-sectional dimension that can be inserted between two adjacent semiconductors or semiconductor packages. A method for removing a semiconductor, comprising: 10. The semiconductor circuit according to claim 9, wherein the electric circuit of the heating resistor is separated from all the electric circuits of the semiconductor and the substrate (including the ground) except for the heating resistor section. Removal method. 11. The semiconductor removing method according to claim 9, wherein a width of a portion of the heating resistor inside the terminal adjacent to the terminal is smaller than a mounting interval of the semiconductor or the semiconductor package. 12. The method for removing a semiconductor according to claim 11, wherein a slit is provided inside the terminal of the heating resistor to prevent the re-fixation of the bump material. 13. The method for removing a semiconductor according to claim 11, wherein an insulative film is bonded to the inside of the terminal of the heating resistor. 14. The semiconductor removing method according to claim 9, wherein the heating resistor is bonded to the ceramic and the resin film, or one of them. 15. A method of melting a part of a semiconductor or a semiconductor package of a semiconductor device in which the semiconductor or the semiconductor package is connected to the substrate through a bump portion, and removing the semiconductor or the semiconductor package from the substrate by melting the bump. 1 of semiconductor package
Covers only the individual, and flows in from one side of the lower surface and the board,
A semiconductor removing method characterized in that a flow path is formed to flow out between another opposite side and a substrate, a circulation flow path including this flow path is formed, and a heater and a fan are provided in the flow path. 16. The method for removing a semiconductor according to claim 15, further comprising a mechanism for adsorbing a rear surface of the semiconductor or the semiconductor package to apply a pulling force. 17. A semiconductor device manufactured by using the removing method according to claim 16.