JPH08139028A - Vertical vapor growth equipment - Google Patents
Vertical vapor growth equipmentInfo
- Publication number
- JPH08139028A JPH08139028A JP6271094A JP27109494A JPH08139028A JP H08139028 A JPH08139028 A JP H08139028A JP 6271094 A JP6271094 A JP 6271094A JP 27109494 A JP27109494 A JP 27109494A JP H08139028 A JPH08139028 A JP H08139028A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- growth
- induction
- support rod
- holding jig
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は縦型気相成長装置に関わ
り、特に半導体単結晶薄膜の成長に多く用いられる高周
波誘導加熱方式の縦型気相成長装置の改良に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vertical vapor phase growth apparatus, and more particularly to improvement of a high frequency induction heating type vertical vapor phase growth apparatus which is often used for growing a semiconductor single crystal thin film.
【0002】[0002]
【従来の技術】半導体装置の製造において、シリコンや
化合物半導体を構成する成分を含む原料ガスの熱分解や
複数種の原料ガス間の反応、基板との表面反応等によっ
て必要な半導体層を被成長基板上に成長させる気相成長
法が用いられている。特に、有機金属や水素化物の熱分
解反応による半導体層の気相成長などのような、熱によ
って原料ガスの組成変化が起こりやすく、その組成変化
が膜質や膜厚に大きく影響を及ぼすような気相成長に
は、被成長基板面に到達する前に原料ガスの組成変化が
起こらないようにする必要がある。このため基板近傍以
外の発熱を避けるために一般に高周波誘導加熱方式によ
る気相成長法が用いられている。ここで一例として、従
来の縦型気相成長装置の反応炉部の概略断面図を図14
に示す。図中の符号101は反応管、102は冷却水用
の給水口、103は排水口、104はガス導入口、10
6は排気口、107は被誘導加熱体(カーボンサセプタ
ー等)、108は被成長基板、110は支持棒、111
は高周波誘導コイルである。2. Description of the Related Art In manufacturing a semiconductor device, a necessary semiconductor layer is grown by thermal decomposition of a source gas containing silicon or a component constituting a compound semiconductor, reaction between a plurality of source gases, surface reaction with a substrate, and the like. A vapor phase growth method of growing on a substrate is used. In particular, in the case of vapor phase growth of a semiconductor layer due to a thermal decomposition reaction of an organic metal or a hydride, a composition change of a source gas is likely to occur due to heat, and the composition change has a large influence on a film quality or a film thickness. For phase growth, it is necessary to prevent the composition change of the source gas from occurring before reaching the surface of the substrate to be grown. Therefore, in order to avoid heat generation other than near the substrate, a vapor phase growth method using a high frequency induction heating method is generally used. Here, as an example, a schematic cross-sectional view of a reaction furnace portion of a conventional vertical vapor deposition apparatus is shown in FIG.
Shown in In the figure, reference numeral 101 is a reaction tube, 102 is a water supply port for cooling water, 103 is a drain port, 104 is a gas introduction port, 10
6 is an exhaust port, 107 is an induction heating object (carbon susceptor, etc.), 108 is a growth substrate, 110 is a support rod, 111
Is a high frequency induction coil.
【0003】しかしながら、図14に示すような構造の
従来の高周波誘導加熱方式の縦型気相成長装置では、カ
ーボンサセプター等の被誘導加熱体107付近の温度上
昇により導入したガスに熱対流が発生するため、一度分
解した成長に寄与しなかった高温の不用なガスが新しい
常温の供給ガスと混合し基板表面に到達するので成長に
寄与する供給ガスが基板に到達する以前に熱分解をし、
基板表面に到達した際の元素成分の比率の制御性を悪く
し、且つばらつきを悪くし、エピタキシャル成長層の品
質、均一性、再現性等に悪影響を及ぼし、高均一、高品
質のエピタキシャル成長層を再現性良く得ることは難し
かった。However, in the conventional high-frequency induction heating type vertical vapor deposition apparatus having the structure shown in FIG. 14, thermal convection is generated in the introduced gas due to the temperature rise in the vicinity of the induction-heated body 107 such as a carbon susceptor. Therefore, once decomposed once the high temperature waste gas that did not contribute to the growth mixes with the new room temperature supply gas and reaches the substrate surface, so the supply gas that contributes to the growth undergoes thermal decomposition before reaching the substrate,
Reproducibility of highly uniform and high-quality epitaxial growth layer by adversely affecting the controllability and variation of the ratio of elemental components when reaching the substrate surface, adversely affecting the quality, uniformity, reproducibility, etc. of the epitaxial growth layer. It was difficult to get good quality.
【0004】そこで、この熱対流の発生による悪影響を
低減するために、実公平2−35814号公報に示され
るような縦型気相成長装置が提案されている。図15に
その反応炉部の概略断面図を示す。図15に示す縦型気
相成長装置においては、原料ガスを反応管101下部の
ガス導入口104から供給し、成長に寄与しなかった不
用なガスは上部の排気口106から排出している。そし
て、基板保持爪112を有する基板保持治具109が支
持棒110に固定されており、基板保持治具109の基
板保持爪112で主面を下方に向けた被成長基板108
の周辺部のみを保持し、且つ被成長基板108の裏面上
には直に被成長基板108と同じ大きさの被誘導加熱体
107を積載している。この方法だと、反応管101の
下部から流入される成長ガスが高温部に触れずに被成長
基板面に到達し、且つ被成長基板108に接して加熱さ
れた成長ガスを上昇気流によって被成長基板面に沿って
その上部に逃がして加熱成長ガスとの混合による被成長
基板面に達する常温の成長ガスの昇温を防止し、組成変
化を生じていない成長ガスがその被成長基板面に接触す
るような構造であるので、つまり原料ガスに対して不用
なガスが混合しにくいので成長膜の膜質の低下及び膜厚
のばらつきが改善される。Therefore, in order to reduce the adverse effects caused by the generation of the thermal convection, a vertical vapor phase growth apparatus as disclosed in Japanese Utility Model Publication No. 2-35814 has been proposed. FIG. 15 shows a schematic sectional view of the reaction furnace part. In the vertical vapor phase growth apparatus shown in FIG. 15, the raw material gas is supplied from the gas inlet 104 at the bottom of the reaction tube 101, and unnecessary gas that has not contributed to the growth is discharged from the exhaust port 106 at the top. A substrate holding jig 109 having a substrate holding claw 112 is fixed to the support rod 110, and the substrate to be grown 108 whose main surface is directed downward by the substrate holding claw 112 of the substrate holding jig 109.
An induction-heated body 107 having the same size as the growth substrate 108 is directly mounted on the back surface of the growth substrate 108 while holding only the peripheral portion thereof. According to this method, the growth gas flowing from the lower part of the reaction tube 101 reaches the surface of the growth substrate without touching the high temperature portion, and the growth gas heated in contact with the growth substrate 108 is grown by the ascending airflow. Prevents the temperature of the growth gas at room temperature from reaching the surface of the growth substrate by mixing with the heated growth gas and escaping along the surface of the substrate to prevent the growth gas that has not changed its composition from contacting the growth substrate surface. With such a structure, unnecessary gas is less likely to be mixed with the raw material gas, so that the deterioration of the quality of the grown film and the variation of the film thickness are improved.
【0005】尚、被成長基板の主面を下方に向けて保持
する縦型気相成長装置としては、特開昭55−2028
2号公報に示される公知例もあるが、該公知例の装置
は、被成長基板面上に異物が付着するのを防止する目的
でなされたものであって、反応管の外部から反応管とと
もに基板を加熱しているので、有機金属及び水素化物を
用いた気相成長においては原料ガスが被成長基板面に到
達する前に高温の反応管内で熱分解して変質するので、
高周波誘導加熱方式を用いて基板近傍のみを加熱する上
記考案とは同様の効果は得られない。As a vertical vapor phase growth apparatus for holding the main surface of a substrate to be grown downward, Japanese Patent Laid-Open No. 55-2028 is known.
Although there is a known example shown in Japanese Patent Publication No. 2), the apparatus of the known example is designed to prevent foreign matters from adhering to the surface of the substrate to be grown, and the apparatus is provided from outside the reaction tube together with the reaction tube. Since the substrate is heated, in vapor phase growth using an organic metal and a hydride, the source gas is pyrolyzed and deteriorated in the high temperature reaction tube before reaching the surface of the substrate to be grown.
The same effect as the above-mentioned invention in which only the vicinity of the substrate is heated using the high frequency induction heating method cannot be obtained.
【0006】また、さらに熱対流の発生による悪影響を
低減する方法として、特開平2−6389号公報に示さ
れるような半導体薄膜気相成長装置が提案されている。
図16にその反応炉部の概略断面図を示す。図16に示
す気相成長装置においては、原料ガス供給口104の周
りにキャリアガス供給口105が設けられている。この
ような構造にすることで被成長基板に供給された原料ガ
スのうち成長に寄与しなかった不用なガスをキャリアガ
スが積極的に上部に押し上げるので、より効果的に不用
なガスを排気できるものである。Further, as a method for further reducing the adverse effect caused by the generation of thermal convection, a semiconductor thin film vapor phase growth apparatus as disclosed in Japanese Patent Application Laid-Open No. 2-6389 has been proposed.
FIG. 16 shows a schematic sectional view of the reaction furnace part. In the vapor phase growth apparatus shown in FIG. 16, a carrier gas supply port 105 is provided around the source gas supply port 104. With such a structure, the carrier gas positively pushes the unnecessary gas that has not contributed to the growth among the source gases supplied to the substrate to be grown to the upper portion, so that the unnecessary gas can be exhausted more effectively. It is a thing.
【0007】しかしながらこれらの方法では、被成長基
板の中心付近の膜厚のばらつき、膜質が改善されるもの
の、被成長基板と同じ大きさの被誘導加熱体107を被
成長基板108に積載した構造であるので、周辺部が厚
くなるエッジ効果がおこり均一性が悪くなっていた。図
16に示した縦型気相成長装置では原料ガス供給量とキ
ャリアガス供給量及びその比を適切に選ぶことで面内の
均一性を上げることができ、キャリアガス供給量を原料
ガス供給量よりも多くする方向で中心付近での膜厚が均
一になるが、このような中心付近での膜厚が均一になる
ように条件を選んだ場合、どうしても周辺部の片側1c
m程度は厚くなってしまう。また、被成長基板と同じ大
きさの被誘導加熱体を被成長基板上に積載しているの
で、被誘導加熱体の周辺部の温度は中心部に比べて低く
被誘導加熱体の温度分布によって被成長基板に熱歪が生
じ、スリップライン等の欠陥の原因になっていた。この
ような周辺部の盛り上がり、熱歪によるスリップライン
等の欠陥の発生を低減する方法として、被成長基板より
も大きな被誘導加熱体を用いることが考えられる。こう
することで被成長基板の周辺部においてもガスの流れは
均一になるので膜厚の均一性は改善され、また、被成長
基板の接している被誘導加熱体の領域の温度分布も小さ
くなることが予想される。However, in these methods, although the variation of the film thickness near the center of the growth substrate and the film quality are improved, the induction heated body 107 of the same size as the growth substrate is stacked on the growth substrate 108. Therefore, the edge effect of thickening the peripheral portion occurs and the uniformity is deteriorated. In the vertical vapor phase growth apparatus shown in FIG. 16, in-plane uniformity can be improved by appropriately selecting the raw material gas supply amount and the carrier gas supply amount and the ratio thereof. Although the film thickness near the center becomes uniform in the direction of increasing the thickness, when the conditions are selected so that the film thickness near the center becomes uniform, the one side 1c of the peripheral portion is inevitable.
About m will be thicker. Further, since the induction heated body having the same size as the growth substrate is loaded on the growth substrate, the temperature of the peripheral portion of the induction heated body is lower than that of the central portion and the temperature distribution of the induction heated body depends on the temperature distribution. Thermal strain was generated on the substrate to be grown, which caused defects such as slip lines. As a method of reducing the rise of the peripheral portion and the generation of defects such as slip lines due to thermal strain, it is conceivable to use an induction-heated body larger than the growth substrate. By doing so, the gas flow becomes uniform even in the peripheral portion of the growth substrate, so that the uniformity of the film thickness is improved and the temperature distribution in the region of the induction heating body in contact with the growth substrate also becomes small. It is expected that.
【0008】被成長基板よりも大きな被誘導加熱体を用
いる方法は、原料ガスを上部から供給し成長に寄与しな
かった不用なガスを下部から排出する構造の従来の縦型
気相成長装置(図14)においては被成長基板を被誘導
加熱体上に積載するだけなので被誘導加熱体を大きくす
るだけで良く特に問題はない。しかしながら、原料ガス
を下部から供給し成長に寄与しなかった不用なガスを上
部から排出する構造の高周波誘導加熱方式を用いた縦型
気相成長装置(図15,16)においては、被成長基板
の主面を下方に向けて保持し、しかも被誘導加熱体から
効率よく熱を供給しなければならないので基板保持方法
が難しかった。ここで図15に示した従来の縦型気相成
長装置の基板保持方法の詳細を図17に示す。この例で
は、基板保持爪112付きの固定保持腕130及び揺動
可能保持腕131を有する基板保持治具109で主面を
下方に向けた被成長基板108を保持し、該被成長基板
108の裏面上に直に被成長基板と同じ大きさの被誘導
加熱体107を積載している。このようにすれば被成長
基板108の主面を下方に向けて保持し、しかも被誘導
加熱体107から効率よく熱を供給することが可能であ
る。しかしながら、このような小さな基板保持爪112
を用いて被成長基板108と被誘導加熱体107を同時
に保持する場合、被誘導加熱体107を被成長基板10
8よりも大きくすると被成長基板108は基板保持爪1
12上での自由度が大きくなり、位置精度は非常に悪か
った。このため被誘導加熱体に対して被成長基板をずれ
ないようにするためには被成長基板と被誘導加熱体を同
じ大きさにする必要があった。The method of using an induction heated body larger than the growth substrate is a conventional vertical type vapor phase growth apparatus having a structure in which a source gas is supplied from the upper part and unnecessary gas which has not contributed to the growth is discharged from the lower part ( In FIG. 14), since the substrate to be grown is simply loaded on the body to be heated by induction, there is no particular problem as long as the body to be heated by induction is enlarged. However, in a vertical vapor phase growth apparatus (FIGS. 15 and 16) using a high frequency induction heating system having a structure in which a raw material gas is supplied from the lower portion and unnecessary gas that has not contributed to growth is discharged from the upper portion, The substrate holding method is difficult because the main surface must be held downward and the heat must be efficiently supplied from the induction-heated body. FIG. 17 shows details of the substrate holding method of the conventional vertical vapor deposition apparatus shown in FIG. In this example, a substrate holding jig 109 having a fixed holding arm 130 with a substrate holding claw 112 and a swingable holding arm 131 holds a substrate to be grown 108 whose main surface faces downward, and An induction-heated body 107 having the same size as the growth substrate is directly mounted on the back surface. By doing so, it is possible to hold the main surface of the growth substrate 108 downward and to efficiently supply heat from the induction-heated body 107. However, such a small substrate holding claw 112
When the growth substrate 108 and the induction-heated body 107 are held simultaneously by using the
When it is larger than 8, the substrate to be grown 108 is the substrate holding claw 1.
The degree of freedom on 12 was large, and the position accuracy was very poor. Therefore, in order to prevent the growth substrate from being displaced with respect to the induction heating body, it is necessary to make the growth substrate and the induction heating body the same size.
【0009】ところで気相成長装置により結晶成長を行
なう場合、反応室内を清浄に保つことは非常に大切であ
る。このような観点から被成長基板を搬送する方法がと
られている。搬送には一般に特開昭61−132592
号公報に示されるようなロードロック方式を用い反応室
内の汚染を防止している。この場合も、原料ガスを上部
から供給し成長に寄与しなかった不用なガスを下部から
排出する構造の従来の気相成長装置においては、例えば
特開昭61−242994号公報に示されるような基板
と接する面を粗面としたサファイア板、Si板などの絶
縁物を基板保持治具として用い被成長基板をその上に載
せれば基板の位置ずれを防止しつつカーボンサセプター
などの被誘導加熱体上に搬送することは容易である。し
かしながら、原料ガスを下部から供給し成長に寄与しな
かった不用なガスを上部から排出する構造の高周波誘導
加熱方式を用いた縦型気相成長装置における基板搬送は
容易ではない。このため図15に示すような従来の縦型
気相成長装置においては、図17に示すように基板保持
治具109と支持棒110とは一体化されていてカーボ
ンサセプターを直に基板上に積載する方法がとられてい
る。そのため、被成長基板をセットする時、多孔質でガ
ス吸着量の多いカーボンサセプターのような被誘導加熱
体も別室(基板挿入室)に移動する必要があり、成長層
に悪影響を及ぼす酸素等の吸着が生じてしまい、反応室
に持ち込まれると膜質低下の原因となる。また、充分脱
ガスしようとすると非常に時間がかかりスループットを
悪くする原因となるという欠点があった。By the way, when crystal growth is performed by a vapor phase growth apparatus, it is very important to keep the reaction chamber clean. From this point of view, the method of transporting the growth substrate is adopted. For transportation, generally, Japanese Patent Application Laid-Open No. 61-132592
A load lock system as disclosed in Japanese Patent Laid-Open Publication No. 2003-242242 is used to prevent contamination in the reaction chamber. Also in this case, in a conventional vapor phase growth apparatus having a structure in which a raw material gas is supplied from the upper portion and unnecessary gas that has not contributed to growth is discharged from the lower portion, for example, as disclosed in Japanese Patent Laid-Open No. 61-242994. Using an insulator such as a sapphire plate or a Si plate with a rough surface in contact with the substrate as a substrate holding jig and placing the substrate to be grown on top of it, displacement of the substrate is prevented and induction heating such as carbon susceptor is performed. It is easy to transport onto the body. However, it is not easy to transfer a substrate in a vertical vapor phase growth apparatus using a high frequency induction heating system having a structure in which a source gas is supplied from the lower portion and an unnecessary gas that does not contribute to growth is discharged from the upper portion. Therefore, in the conventional vertical vapor deposition apparatus as shown in FIG. 15, the substrate holding jig 109 and the support rod 110 are integrated as shown in FIG. 17, and the carbon susceptor is directly mounted on the substrate. The way to do is taken. Therefore, when setting the growth substrate, it is necessary to move the induction-heated body such as carbon susceptor, which is porous and has a large amount of gas adsorption, to a separate chamber (substrate insertion chamber), so that oxygen or the like that adversely affects the growth layer If it is adsorbed and brought into the reaction chamber, it causes deterioration of the film quality. In addition, there is a drawback that it takes a very long time to sufficiently degas, which causes a decrease in throughput.
【0010】また、被成長基板の下流側は多結晶等が堆
積する。特に被誘導加熱体、及び基板保持治具の近くは
反応管の内壁と共に多いが、基板保持治具と支持棒とが
一体化されている図17に示すような従来の縦型気相成
長装置においては被誘導加熱体を取り外し頻繁に洗浄す
る必要がある。しかし、洗浄交換後は特に充分脱ガスし
なければ高品質のエピタキシャル成長層が得られない。
このためスループットを悪くする原因となるという欠点
があった。Polycrystals and the like are deposited on the downstream side of the growth substrate. In particular, the vicinity of the induction-heated body and the substrate holding jig is large along with the inner wall of the reaction tube, but the conventional vertical vapor phase growth apparatus as shown in FIG. 17 in which the substrate holding jig and the support rod are integrated. In, it is necessary to remove the induction-heated body and wash it frequently. However, after cleaning and replacement, a high-quality epitaxial growth layer cannot be obtained unless degassing is sufficiently performed.
Therefore, there is a drawback that it causes a deterioration in throughput.
【0011】さらに、原料ガスを下部から供給し成長に
寄与しなかった不用なガスを上部から排出する構造の従
来の高周波誘導加熱方式を用いた縦型気相成長装置で
は、重い被誘導加熱体の自重によって被成長基板を基板
保持治具に密着しているので、被成長基板周辺部の被保
持部に加わる力は強く、スリップライン、ウエハーの反
り等が発生し、GaAs基板のような脆い材料では場合
によっては基板が割れてしまうという致命的な欠点があ
った。また、このようなエピタキシャル成長基板を用い
て発光素子などのデバイスを作製すると歩留まり、信頼
性などのデバイス性能に悪影響が現れていた。これらの
ように、原料ガスを下部から供給し成長に寄与しなかっ
た不用なガスを上部から排出する構造の従来の高周波誘
導加熱方式を用いた縦型気相成長装置においては、複数
の別の原因によりエピタキシャル成長層の品質低下が起
きるという不具合があった。Further, in the vertical type vapor phase growth apparatus using the conventional high frequency induction heating system of the structure in which the raw material gas is supplied from the lower part and the unnecessary gas which has not contributed to the growth is discharged from the upper part, the heavy induction heating object is used. Since the substrate to be grown is in close contact with the substrate holding jig by its own weight, the force applied to the portion to be held around the substrate to be grown is strong and slip lines, wafer warpage, etc. occur, making it fragile like GaAs substrates. The material had a fatal defect that the substrate was broken in some cases. Further, when a device such as a light emitting device is manufactured using such an epitaxial growth substrate, the yield and the device performance such as reliability are adversely affected. As described above, in the vertical vapor phase growth apparatus using the conventional high-frequency induction heating system of the structure in which the raw material gas is supplied from the lower portion and the unnecessary gas that does not contribute to the growth is discharged from the upper portion, There was a problem that the quality of the epitaxial growth layer deteriorated due to the cause.
【0012】[0012]
【発明が解決しようとする課題】本発明は、上述の点を
考慮してなされたものであって、反応ガスを下部から導
入して上部に排出する縦型反応管と、主面を下方に向け
て周辺部のみで保持された被成長基板と、被成長基板を
加熱するための被誘導加熱体とを有し、高周波誘導加熱
方式を用いた縦型気相成長装置において、請求項1で
は、ウエハーの大きさによらず位置精度を高くしつつ基
板搬送するための治具を提供すること、請求項2では、
ウエハーの大きさによらずウエハー挿入時の位置精度を
高くしてウエハーを保持すること、膜厚の均一性を良く
すること、及び、熱歪が原因であるスリップライン等の
欠陥、ウエハーの反り等の発生を低減すること、請求項
3では、ウエハーの大きさによらず位置精度を高くして
基板搬送すること、膜厚の均一性を良くすること、及
び、熱歪が原因であるスリップライン等の欠陥、ウエハ
ーの反り等の発生を低減すること、請求項4では、被誘
導加熱体を反応室に残したまま基板搬送して反応室への
不純物の持込みを低減すること、請求項5では、請求項
4で、まだ課題であった密着性を改善すること、請求項
6では、誘導加熱体の自重が原因であるスリップライン
等の欠陥、ウエハーの反り、ウエハーの割れ等の発生を
低減すること、請求項7では、請求項6において、更
に、ウエハーの大きさによらずウエハー挿入時の位置精
度を高くしてウエハーを保持すること、膜厚の均一性を
善くすること、及び、熱歪が原因であるスリップライン
等の欠陥、ウエハーの反り等の発生を低減すること、請
求項8では、請求項6において、更に、反応室への不純
物の持込みを低減すること、請求項9では、請求項8に
おいて、更に、ウエハーの大きさによらず位置精度を高
くして基板搬送すること、請求項10では、請求項6
で、まだ課題であった被誘導加熱体の位置を制御可能に
すること、請求項11では、被誘導加熱体の自重が原因
であるスリップライン等の欠陥、ウエハーの反り、ウエ
ハーの割れ等の発生を低減すること、また、ウエハーの
大きさ、形状によらず位置精度を高くしてウエハーを保
持すること、等を目的としている。SUMMARY OF THE INVENTION The present invention has been made in consideration of the above points, and includes a vertical reaction tube for introducing a reaction gas from a lower portion and discharging the reaction gas to an upper portion, and a main surface downward. A vertical vapor phase growth apparatus using a high frequency induction heating method, comprising: a growth substrate held only at a peripheral portion thereof and an induction heated body for heating the growth substrate. Providing a jig for transferring a substrate while increasing the positional accuracy regardless of the size of the wafer.
Regardless of the size of the wafer, hold the wafer by increasing the position accuracy when inserting the wafer, improve the uniformity of the film thickness, and the defects such as the slip line due to the thermal strain and the warp of the wafer. And the like. In claim 3, the substrate is transported with high positional accuracy regardless of the size of the wafer, the uniformity of the film thickness is improved, and the slip caused by thermal strain is caused. Claim 5: To reduce the occurrence of defects such as lines, warp of a wafer, etc., and to reduce the carry-in of impurities into the reaction chamber by carrying the substrate while leaving the induction-heated object in the reaction chamber. In claim 5, the adhesion, which was still a problem in claim 4, is improved. In claim 6, defects such as slip lines caused by the self-weight of the induction heating body, wafer warpage, and wafer cracking occur. Reduce the billing According to claim 7, in claim 6, the position accuracy at the time of inserting the wafer is increased regardless of the size of the wafer to hold the wafer, the uniformity of the film thickness is improved, and the thermal strain is caused. Reducing the occurrence of defects such as a certain slip line, warpage of the wafer, and the like, claim 8 in claim 6, further reducing the carry-in of impurities into the reaction chamber, and claim 9 in claim 8. In claim 10, further, the substrate transfer is performed with high positional accuracy regardless of the size of the wafer.
Therefore, it is possible to control the position of the induction-heated body, which is still a problem. The purpose of this is to reduce the occurrence and to hold the wafer by increasing the positional accuracy regardless of the size and shape of the wafer.
【0013】[0013]
【課題を解決するための手段】上記目的を達成するた
め、請求項1に示す縦型気相成長装置は、反応室内に設
置され、反応ガスを下部から導入して上部に排出する縦
型反応管と、該反応管内において主面を下方に向けた被
成長基板の裏面上に積載される被誘導加熱体とを有し、
高周波誘導加熱方式を用いて結晶成長を行なう縦型気相
成長装置において、前記反応管内に挿入され反応管内で
回転する支持棒と、該支持棒に保持され前記被成長基板
を主面を下方に向けて保持する基板保持治具とを備え、
被成長基板の搬送には別室で被成長基板を基板保持治具
に保持してから反応室に移動し、支持棒に設けられた基
板保持治具受け部に保持できるように基板保持治具を用
い、前記基板保持治具は、前記被誘導加熱体が入ること
が可能な筒状の本体と、該本体の下部に設けられ前記回
転する支持棒の軸方向に直角に突出して主面を下方に向
けた被成長基板の周辺部を保持する複数個の平坦なまた
は断部を有する基板保持爪と、本体上部に設けられ前記
支持棒の基板保持治具受け部と係合される本体の外径よ
りも大きな保持用リング部とを有し、前記支持棒に対し
て着脱可能であることを特徴とする。In order to achieve the above object, a vertical vapor phase growth apparatus according to claim 1 is installed in a reaction chamber, and a vertical reaction system in which a reaction gas is introduced from the lower part and discharged to the upper part. A tube, and an induction-heated body mounted on the back surface of the growth substrate with the main surface facing downward in the reaction tube,
In a vertical vapor phase growth apparatus for performing crystal growth using a high frequency induction heating method, a supporting rod that is inserted into the reaction tube and rotates in the reaction tube, and a main surface of the substrate to be grown which is held by the supporting rod and is directed downward. Equipped with a board holding jig that holds the
When transporting the substrate to be grown, hold it on a substrate holding jig in a separate room, move it to the reaction chamber, and then hold the substrate holding jig so that it can be held in the substrate holding jig receiving part provided on the support rod. The substrate holding jig includes a cylindrical main body into which the induction-heated body can be inserted, and a main surface which is provided at a lower portion of the main body and protrudes at right angles to the axial direction of the rotating support rod. A substrate holding claw having a plurality of flat or broken portions for holding the peripheral portion of the substrate to be grown, and an outside of the main body which is provided on the upper portion of the main body and is engaged with the substrate holding jig receiving portion of the supporting rod. It has a holding ring portion having a diameter larger than the diameter, and is detachable from the support rod.
【0014】請求項2に示す縦型気相成長装置は、反応
室内に設置され、反応ガスを下部から導入して上部に排
出する縦型反応管と、反応管内に挿入され反応管内で回
転する支持棒と、主面を下方に向けた被成長基板をその
周辺部のみで保持し該被成長基板の裏面の上方に位置す
る前記支持棒に保持された基板保持治具と、被成長基板
の裏面上に直に積載された被誘導加熱体とを有し、高周
波誘導加熱方式を用いて結晶成長を行なう縦型気相成長
装置において、前記被誘導加熱体の底面の面積が前記被
成長基板よりも大きくて、前記基板保持治具は、回転す
る支持棒の軸方向に直角に複数個の基板保持爪を有して
おり、該基板保持爪の上面すなわち被成長基板に接する
方の面には被成長基板の厚さよりも浅い段部が形成され
ていて、その段部に被成長基板が保持される構造を有す
ることを特徴とする。A vertical vapor phase growth apparatus according to a second aspect of the present invention is installed in a reaction chamber, and has a vertical reaction tube for introducing a reaction gas from a lower part and discharging the reaction gas to an upper part, and a vertical reaction tube inserted in the reaction tube and rotated in the reaction tube. A supporting rod, a substrate holding jig which holds the substrate to be grown with its main surface facing downward only at its peripheral portion and is held by the supporting rod located above the back surface of the substrate to be grown, In a vertical vapor deposition apparatus having an induction-heated body directly mounted on the back surface and performing crystal growth using a high-frequency induction heating method, the bottom surface of the induction-heated body has an area of the growth substrate. In addition, the substrate holding jig has a plurality of substrate holding claws at right angles to the axial direction of the rotating support rod, and the upper surface of the substrate holding claws, that is, the surface of the substrate holding claw that contacts the growth substrate. Has a stepped portion that is shallower than the thickness of the substrate to be grown. And having a structure in which the growth substrate is held.
【0015】請求項3に示す縦型気相成長装置は、反応
室内に設置され、反応ガスを下部から導入して上部に排
出する縦型反応管と、反応管内に挿入され反応管内で回
転する支持棒と、主面を下方に向けた被成長基板をその
周辺部のみで保持し該被成長基板の裏面の上方に位置す
る前記支持棒に保持された基板保持治具と、被成長基板
の裏面上に直に積載された被誘導加熱体とを有し、高周
波誘導加熱方式を用いて結晶成長を行なう縦型気相成長
装置において、前記被誘導加熱体の底面の面積が前記被
成長基板よりも大きくて、また、別室で被成長基板を基
板保持治具に保持してから反応室に移動し、支持棒に設
けられた基板保持治具受け部に保持できるように、前記
基板保持治具として、前記被誘導加熱体が入ることが可
能な筒状の本体と、該本体の下部に設けられ前記回転す
る支持棒の軸方向に直角に突出して主面を下方に向けた
被成長基板の周辺部を保持する複数個の基板保持爪と、
本体上部に設けられ前記支持棒の基板保持治具受け部と
係合される本体の外径よりも大きな保持用リング部とを
有し、前記支持棒に対して着脱可能である第1の基板保
持治具と、該第1の基板保持治具に主面を下方に向けて
被成長基板の裏面上に直に積載した被成長基板よりも大
きく基板保持治具の内径よりも若干小さい被誘導加熱体
と同程度の直径の絶縁板とを有することを特徴とする基
板保持治具を用い、該基板保持治具により被成長基板が
搬送されることを特徴とする。A vertical vapor phase growth apparatus according to a third aspect of the present invention is installed in a reaction chamber and has a vertical reaction tube for introducing a reaction gas from a lower part and discharging the reaction gas to an upper part, and a vertical reaction tube inserted in the reaction tube and rotated in the reaction tube. A supporting rod, a substrate holding jig which holds the substrate to be grown with its main surface facing downward only at its peripheral portion and is held by the supporting rod located above the back surface of the substrate to be grown, In a vertical vapor phase growth apparatus having an induction heated body directly mounted on the back surface and performing crystal growth using a high frequency induction heating method, the area of the bottom surface of the induction heated body is the growth substrate. The substrate holding jig is larger than the substrate holding jig so that the substrate can be held in the substrate holding jig in a separate chamber and then moved to the reaction chamber and held in the substrate holding jig receiving portion provided on the support rod. As a tool, a cylindrical body capable of containing the induction-heated body A plurality of substrate holding claws for holding the peripheral portion of the growth substrate with its main surface downward projecting perpendicularly to the axial direction of the support rod that the rotation is provided in the lower part of the body,
A first substrate which is provided on the upper part of the main body and has a holding ring portion larger than the outer diameter of the main body engaged with the substrate holding jig receiving portion of the support rod, and is attachable to and detachable from the support rod. The holding jig and the guided substrate which is larger than the growing substrate directly mounted on the back surface of the growing substrate with the main surface facing downward on the first substrate holding jig and slightly smaller than the inner diameter of the substrate holding jig. A substrate holding jig having a heating body and an insulating plate having the same diameter as that of the heating body is used, and the substrate to be grown is transported by the substrate holding jig.
【0016】請求項4に示す縦型気相成長装置は、反応
室内に設置され、反応ガスを下部から導入して上部に排
出する縦型反応管と、反応管内に挿入され反応管内で回
転する支持棒と、主面を下方に向けた被成長基板をその
周辺部のみで保持し該被成長基板の裏面の上方に位置す
る前記支持棒に保持された基板保持治具と、被成長基板
の裏面上に直に積載された被誘導加熱体とを有し、高周
波誘導加熱方式を用いて結晶成長を行なう縦型気相成長
装置において、被成長基板セット時においても被誘導加
熱体は常に反応管を含む外気が直接は入り込まない反応
室内にあり、別室で被成長基板を取り付けた基板保持治
具が横方向から反応室に移動し支持棒に保持されて、被
成長基板の裏面上に被誘導加熱体がサセプター待機部か
ら下方に移動して積載されるように、被成長基板を取り
付けた基板保持治具を保持した支持棒とは独立に上下方
向に移動可能なサセプター支持棒と、支持棒に保持され
た基板保持治具の上方に位置するサセプター待機部とを
有した構造であることを特徴とする。A vertical vapor phase growth apparatus according to a fourth aspect of the present invention is installed in a reaction chamber and has a vertical reaction tube for introducing a reaction gas from a lower portion and discharging the reaction gas to an upper portion, and a vertical reaction tube inserted into the reaction tube and rotating in the reaction tube. A supporting rod, a substrate holding jig which holds the substrate to be grown with its main surface facing downward only at its peripheral portion and is held by the supporting rod located above the back surface of the substrate to be grown, In a vertical vapor phase growth apparatus that has an induction-heated element directly mounted on the backside and performs crystal growth using a high-frequency induction heating method, the induction-heated element always reacts even when the growth substrate is set. The inside of the reaction chamber where the outside air including the tube does not directly enter, the substrate holding jig with the substrate to be grown attached in a separate chamber is moved from the lateral direction to the reaction chamber and is held by the support rod, so that the back surface of the substrate to be grown is covered. The induction heater moves downward from the susceptor standby As shown in the figure, a susceptor support rod that is vertically movable independently of the support rod that holds the substrate holding jig to which the growth substrate is attached, and a position above the substrate holding jig that is held by the support rod. And a susceptor standby portion that operates.
【0017】請求項5に示す縦型気相成長装置は、請求
項4に示す縦型気相成長装置において、前記被誘導加熱
体は被成長基板の裏面上に積載したときに、被成長基板
の裏面の上方にある支持棒と一緒に回転するサセプター
支持棒に対して上下方向に遊びを持つ構造を有すること
を特徴とする。A vertical vapor phase growth apparatus according to a fifth aspect is the vertical vapor phase growth apparatus according to the fourth aspect, wherein when the induction-heated body is loaded on the back surface of the growth substrate, the growth substrate is grown. Is characterized by having a structure having a vertical play with respect to the susceptor support rod that rotates together with the support rod above the back surface of the.
【0018】請求項6に示す縦型気相成長装置は、反応
室内に設置され、反応ガスを下部から導入して上部に排
出する縦型反応管と、反応管内に挿入され反応管内で回
転する支持棒と、主面を下方に向けた被成長基板をその
周辺部のみで保持し該被成長基板の裏面の上方に位置す
る前記支持棒に保持された基板保持治具と、被成長基板
の裏面上に直に積載された被誘導加熱体とを有し、高周
波誘導加熱方式を用いて結晶成長を行なう縦型気相成長
装置において、前記被誘導加熱体は、被成長基板の裏面
の上方にある支持棒と一緒に回転するサセプター支持棒
に保持された主となる第1の被誘導加熱体と、第1の被
誘導加熱体と該被成長基板の間に第1の被誘導加熱体よ
りも軽く第1の被誘導加熱体と接しないで該被成長基板
の裏面上に直に積載した第2の被誘導加熱体とに分かれ
ていることを特徴とする。A vertical vapor phase growth apparatus according to a sixth aspect of the present invention is installed in a reaction chamber and has a vertical reaction tube for introducing a reaction gas from a lower part and discharging it to an upper part, and a vertical reaction tube inserted in the reaction tube and rotated in the reaction tube. A supporting rod, a substrate holding jig which holds the substrate to be grown with its main surface facing downward only at its peripheral portion and is held by the supporting rod located above the back surface of the substrate to be grown, In a vertical vapor phase growth apparatus that has an induction-heated body directly mounted on the back surface and performs crystal growth using a high-frequency induction heating method, the induction-heated body is above the back surface of the substrate to be grown. A first induction-heated body held by a susceptor-supporting bar rotating together with the support bar in FIG. 1, and a first induction-heating body between the first induction-heated body and the growth substrate. Lighter than the first induction-heated body and directly stacked on the back surface of the substrate to be grown. Wherein the second is divided into a target induction heating body in which.
【0019】請求項7に示す縦型気相成長装置は、請求
項6に示す縦型気相成長装置において、前記第2の被誘
導加熱体は被成長基板よりも大きくて、前記基板保持治
具は回転する支持棒の軸方向に直角に複数個の基板保持
爪を有しており、該基板保持爪の上面すなわち被成長基
板に接する方の面には被成長基板の厚さよりも浅い段部
が形成されていて、その段部に被成長基板が保持される
構造を有することを特徴とする。A vertical vapor deposition apparatus according to a seventh aspect is the vertical vapor deposition apparatus according to the sixth aspect, wherein the second induction-heated body is larger than the growth substrate, and the substrate holding treatment is performed. The tool has a plurality of substrate holding claws at right angles to the axial direction of the rotating support rod, and the upper surface of the substrate holding claws, that is, the surface in contact with the growth substrate has a step shallower than the thickness of the growth substrate. It has a structure in which a portion is formed and the stepped portion holds the growth substrate.
【0020】請求項8に示す縦型気相成長装置は、請求
項6,7に示す縦型気相成長装置において、前記第2の
被誘導加熱体は、被成長基板の裏面の上方にある支持棒
と一緒に回転するサセプター支持棒に保持された第1の
被誘導加熱体に対して上下方向に遊びを持って保持され
る構造であることを特徴とする。A vertical vapor deposition apparatus according to claim 8 is the vertical vapor deposition apparatus according to claims 6 and 7, wherein the second induction-heated body is above the back surface of the growth substrate. The structure is characterized in that it is held with play in the vertical direction with respect to the first induction-heated body held by the susceptor support rod that rotates together with the support rod.
【0021】請求項9に示す縦型気相成長装置は、請求
項8に示す縦型気相成長装置において、前記第2の被誘
導加熱体は前記被成長基板よりも大きくて、第2の被誘
導加熱体と被成長基板の間に被成長基板より大きく前記
基板保持治具の内径よりも若干小さい第2の被誘導加熱
体と同程度の直径の絶縁板が挿入されていることを特徴
とする。A vertical vapor phase growth apparatus according to a ninth aspect is the vertical vapor phase growth apparatus according to the eighth aspect, wherein the second object to be heated is larger than the substrate to be grown, An insulating plate, which is larger than the growth substrate and slightly smaller than the inner diameter of the substrate holding jig and has the same diameter as the second induction heating body, is inserted between the induction heating body and the growth substrate. And
【0022】請求項10に示す縦型気相成長装置は、請
求項6に示す縦型気相成長装置であって、被成長基板セ
ット時においても第1の被誘導加熱体は常に反応管を含
む外気が直接は入り込まない反応室内にあり、別室で被
成長基板と第2の被誘導加熱体を取り付けた基板保持治
具が横方向から反応室に移動し支持棒に保持される構造
の縦型気相成長装置において、第2の被誘導加熱体上の
接しない位置に第1の被誘導加熱体がサセプター待機部
から下方に移動できるように、回転する支持棒とは独立
に上下方向に移動可能なサセプター支持棒と、支持棒に
保持された基板保持治具の上方にサセプター待機部とを
有した構造であることを特徴とする。A vertical vapor deposition apparatus according to a tenth aspect is the vertical vapor deposition apparatus according to the sixth aspect, wherein the first induction-heated body always has a reaction tube even when the growth substrate is set. It is in the reaction chamber where the outside air does not enter directly, and the substrate holding jig with the substrate to be grown and the second induction-heated body attached in a separate chamber is moved from the lateral direction to the reaction chamber and is held by the support rod. In the vapor phase epitaxy apparatus, the first induction-heated body is moved vertically from the susceptor standby portion to a position on the second induction-heated body that is not in contact with the second induction-heated body independently of the rotating support rod. The structure is characterized in that it has a movable susceptor support rod and a susceptor standby portion above the substrate holding jig held by the support rod.
【0023】請求項11に示す縦型気相成長装置は、反
応室内に設置され、反応ガスを下部から導入して上部に
排出する縦型反応管と、該反応管内において主面を下方
に向けた被成長基板の裏面上に直に接した被誘導加熱体
とを有し、高周波誘導加熱方式を用いて結晶成長を行な
う縦型気相成長装置において、前記被誘導加熱体は、前
記被成長基板の裏面の上方にある支持棒と一緒に回転す
るサセプター支持棒に保持された主となる第1の被誘導
加熱体と、前記被成長基板の裏面上に直に接した第1の
被誘導加熱体よりも軽くて該被成長基板よりも大きい第
2の被誘導加熱体とに分かれていて、第2の被誘導加熱
体は前記被成長基板の裏面の上方にある回転する支持棒
に保持された第1の基板保持治具により保持され、前記
被成長基板は前記第1の基板保持治具とは別の第2の基
板保持治具により第2の被誘導加熱体に保持される構造
を有することを特徴とする。A vertical vapor phase growth apparatus according to claim 11 is installed in a reaction chamber and has a vertical reaction tube for introducing a reaction gas from a lower part and discharging it to an upper part, and a main surface of the reaction tube facing downward. In the vertical vapor phase growth apparatus having a heated object to be directly contacted on the back surface of the substrate to be grown and performing crystal growth using a high frequency induction heating method, A first first induction-heated body held by a susceptor support rod which rotates together with a support rod above the back surface of the substrate, and a first induction-heated body in direct contact with the back surface of the substrate to be grown. It is divided into a second induction-heated body which is lighter than the heating body and larger than the growth substrate, and the second induction-heating body is held by a rotating support rod above the back surface of the growth substrate. The substrate to be grown is held by the first substrate holding jig And having a structure that is held in the second of the induction heating member by the second substrate holding jig separate from the first substrate holding jig.
【0024】[0024]
【作用】従って、請求項1に示す縦型気相成長装置は、
反応ガスを下部から導入して上部に排出する縦型反応管
と、主面を下方に向けた被成長基板の裏面上に積載され
た被誘導加熱体とを有して高周波誘導加熱方式を用いて
結晶成長を行なう縦型気相成長装置において、基板保持
治具は、被成長基板の搬送には別室で被成長基板を基板
保持治具に保持してから反応室に移動し、支持棒に設け
られた基板保持治具受け部に保持できるように、被誘導
加熱体が入ることが可能な筒状の本体と、該本体の下部
に設けられ前記回転する支持棒の軸方向に直角に突出し
て主面を下方に向けた被成長基板の周辺部を保持する複
数個の平坦なまたは断部を有する基板保持爪と、本体上
部に設けられ前記支持棒の基板保持治具受け部と係合さ
れる本体の外径よりも大きな保持用リング部とを有し、
前記支持棒に対して着脱可能であるので、被成長基板搬
送時に、別室で主面を下方に向けた被成長基板を基板保
持治具の段部を有する基板保持爪に保持してから反応室
に移動し、支持棒に設けた基板保持治具受け部に保持用
リング部を保持することで、筒状の本体の内径よりも充
分小さい被成長基板においても移動しないように再現性
良く基板搬送できる。尚、本体の内径と同程度の大きさ
の被成長基板を用いた場合は段部が無く平坦な基板保持
爪でも移動しないように再現性良く基板搬送できる。こ
のように本発明では、ウエハーの大きさによらず位置精
度を高くしつつ基板搬送するための治具を提供すること
ができる。また、被成長基板の下流側は多結晶等が堆積
する。特に被誘導加熱体の近くは多いが、その領域に着
脱可能な上記基板保持治具を用いると、交換して王水等
で洗浄できるので、被誘導加熱体等、反応室内の汚れを
低減でき、反応管を取り外すような大掛かりなメンテナ
ンスの頻度を少なくできる。また、被誘導加熱体の汚れ
が低減されることから、被誘導加熱体を洗浄する回数が
減り、洗浄後の脱ガス工程を少なくできる効果もある。Therefore, the vertical vapor phase growth apparatus according to claim 1 is
A high-frequency induction heating system is used, which has a vertical reaction tube that introduces reaction gas from the lower part and discharges it to the upper part, and an induction heating object that is loaded on the back surface of the growth substrate with the main surface facing downward. In a vertical vapor phase growth apparatus that performs crystal growth by holding the substrate to be grown, the substrate holding jig is moved to the reaction chamber after holding the substrate to be grown on the substrate holding jig in a separate chamber for transporting the substrate to be grown. A cylindrical main body into which an induction-heated body can be inserted so that it can be held in a substrate holding jig receiving section provided, and a projection provided at a lower portion of the main body at a right angle to the axial direction of the rotating support rod. Substrate holding claw having a plurality of flat or broken portions for holding the peripheral portion of the substrate to be grown with its main surface facing downward, and engaging with the substrate holding jig receiving portion of the support rod provided on the upper portion of the main body And a holding ring portion larger than the outer diameter of the main body,
Since it can be attached to and detached from the support rod, the substrate to be grown whose main surface faces downward in a separate chamber is held in the substrate holding claw having the step portion of the substrate holding jig in the reaction chamber when the substrate to be grown is transferred. By holding the holding ring part on the substrate holding jig receiving part provided on the support rod, the substrate can be transferred with good reproducibility so that it does not move even on a substrate to be grown that is sufficiently smaller than the inner diameter of the cylindrical body. it can. When a substrate to be grown having a size about the same as the inner diameter of the main body is used, the substrate can be conveyed with good reproducibility so that even a flat substrate holding claw without a step does not move. As described above, according to the present invention, it is possible to provide a jig for transferring a substrate while increasing the positional accuracy regardless of the size of the wafer. In addition, polycrystal or the like is deposited on the downstream side of the growth substrate. In particular, although there are many parts near the induction-heated body, the substrate holding jig that can be attached and detached in that area can be exchanged and washed with aqua regia, etc., so that dirt inside the reaction chamber such as the induction-heated body can be reduced. The frequency of large-scale maintenance such as removing the reaction tube can be reduced. Further, since the contamination of the induction-heated body is reduced, the number of times of cleaning the induction-heated body is reduced, and the degassing step after cleaning can be reduced.
【0025】請求項2に示す縦型気相成長装置は、反応
室内に設置され、反応ガスを下部から導入して上部に排
出する縦型反応管と、反応管内に挿入され反応管内で回
転する支持棒と、主面を下方に向けた被成長基板をその
周辺部のみで保持し該被成長基板の裏面の上方に位置す
る前記支持棒に保持された基板保持治具と、被成長基板
の裏面上に直に積載された被誘導加熱体とを有し、高周
波誘導加熱方式を用いて結晶成長を行なう縦型気相成長
装置において、前記被誘導加熱体の底面の面積を前記被
成長基板よりも大きくし、また、前記基板保持治具は、
回転する支持棒の軸方向に直角に複数個の基板保持爪を
有しており、該基板保持爪の上面すなわち被成長基板に
接する方の面には被成長基板の厚さよりも浅い段部が形
成されていて、その段部に被成長基板が保持される構造
を有するので、段部を有する基板保持爪によりウエハー
の大きさによらずウエハー挿入時の位置精度を高くして
ウエハーを保持することができる。また、被誘導加熱体
の底面の面積を被成長基板よりも大きくしているのでエ
ッジ効果が低減され、ウエハー周辺部の気相成長層の厚
さむら等が改善でき、ウエハー面内の膜厚の均一性に優
れた気相成長層を得ることができる。また、被誘導加熱
体の温度分布が原因である被成長基板の周辺部と中心部
の温度差は小さくなり被成長基板の熱歪が抑えられるの
で、この原因によるスリップライン等の欠陥の発生が抑
えられる。更にウエハー面内の温度分布が均一化される
ので温度分布が原因であった膜特性の分布も改善され、
さらに均一で良質の結晶成長層を得ることができる。な
おこれは、支持棒と基板保持治具が一体化されていても
効果がある。A vertical vapor phase growth apparatus according to a second aspect is installed in a reaction chamber, and a vertical reaction tube for introducing a reaction gas from a lower portion and discharging the reaction gas to an upper portion, and a vertical reaction tube inserted into the reaction tube and rotated in the reaction tube. A supporting rod, a substrate holding jig which holds the substrate to be grown with its main surface facing downward only at its peripheral portion and is held by the supporting rod located above the back surface of the substrate to be grown, In a vertical vapor phase growth apparatus having an induction heated body directly mounted on the back surface and performing crystal growth using a high frequency induction heating method, the area of the bottom surface of the induction heated body is set to the growth substrate. And the substrate holding jig is
A plurality of substrate holding claws are provided at right angles to the axial direction of the rotating support rod, and a step portion shallower than the thickness of the growth substrate is provided on the upper surface of the substrate holding claw, that is, the surface in contact with the growth substrate. Since it is formed and has a structure in which the substrate to be grown is held on the stepped portion, the substrate holding claw having the stepped portion holds the wafer by increasing the positional accuracy when inserting the wafer regardless of the size of the wafer. be able to. In addition, since the area of the bottom surface of the induction-heated body is made larger than that of the growth substrate, the edge effect is reduced, the thickness unevenness of the vapor phase growth layer around the wafer can be improved, and the film thickness within the wafer surface can be improved. It is possible to obtain a vapor phase growth layer having excellent uniformity. Further, since the temperature difference between the peripheral portion and the central portion of the growth substrate due to the temperature distribution of the induction-heated body is reduced and the thermal distortion of the growth substrate is suppressed, the occurrence of defects such as slip lines due to this cause. It can be suppressed. Furthermore, since the temperature distribution within the wafer surface is made uniform, the distribution of the film characteristics that was caused by the temperature distribution is also improved,
Further, a uniform and high quality crystal growth layer can be obtained. This is effective even if the support rod and the substrate holding jig are integrated.
【0026】請求項3に示す縦型気相成長装置は、反応
室内に設置され、反応ガスを下部から導入して上部に排
出する縦型反応管と、反応管内に挿入され反応管内で回
転する支持棒と、主面を下方に向けた被成長基板をその
周辺部のみで保持し該被成長基板の裏面の上方に位置す
る前記支持棒に保持された基板保持治具と、被成長基板
の裏面上に直に積載された被誘導加熱体とを有し、高周
波誘導加熱方式を用いて結晶成長を行なう縦型気相成長
装置において、前記被誘導加熱体の底面の面積が前記被
成長基板よりも大きくて、また、別室で被成長基板を基
板保持治具に保持してから反応室に移動し、支持棒に設
けられた基板保持治具受け部に保持できるように、前記
基板保持治具として、前記被誘導加熱体が入ることが可
能な筒状の本体と、該本体の下部に設けられ前記回転す
る支持棒の軸方向に直角に突出して主面を下方に向けた
被成長基板の周辺部を保持する複数個の基板保持爪と、
本体上部に設けられ前記支持棒の基板保持治具受け部と
係合される本体の外径よりも大きな保持用リング部とを
有し、前記支持棒に対して着脱可能である第1の基板保
持治具と、該第1の基板保持治具に主面を下方に向けて
被成長基板の裏面上に直に積載した被成長基板よりも大
きく基板保持治具の内径よりも若干小さい被誘導加熱体
と同程度の直径の絶縁板とを有することを特徴とする基
板保持治具を用い、該基板保持治具により被成長基板が
搬送される構成なので、前記絶縁板の自重により被成長
基板を押さえることができ、第1の基板保持治具の内径
よりも充分小さい基板を保持する場合でも基板保持爪に
段部を設ける必要がなく、基板搬送時の被成長基板の移
動を防止することができる。従って、ウエハーの大きさ
によらずウエハーの位置精度を高くして基板搬送するこ
とができる。また、被誘導加熱体の底面の面積を被成長
基板よりも大きくしているのでエッジ効果が低減され、
ウエハー周辺部の気相成長層の厚さむら等が改善でき、
ウエハー面内の均一性に優れた気相成長層を得ることが
できる。また、被誘導加熱体の温度分布が原因である被
成長基板の周辺部と中心部の温度差は小さくなり被成長
基板の熱歪が抑えられるので、この原因によるスリップ
ライン等の欠陥の発生が抑えられ、更にウエハー面内の
温度分布が均一化されるので、温度分布が原因であった
膜特性の分布も改善され、さらに均一で良質の結晶成長
層を得ることができる。また別な効果として、結晶成長
時にカーブンサセプター主面上及び側面への多結晶の堆
積が抑えられる。特にカーボンサセプター主面上への多
結晶の堆積は、成長回数を重ねるとカーボンサセプター
と被成長基板との接触状態を悪くして温度分布を大きく
し、再現性、均一性などに悪影響を及ぼす原因になるの
でメンテナンスが必要である。この絶縁板は基板搬送時
に第1の基板保持治具と一緒に搬送するので、その都度
交換して第1の基板保持治具と共に王水等で洗浄ができ
るので、被誘導加熱体等、反応室内の汚れを低減でき、
反応管を取り外してカーボンサセプター等を洗浄するよ
うな大掛かりなメンテナンスの頻度を少なくできる。ま
た、被誘導加熱体の汚れが低減されることから、被誘導
加熱体を洗浄する回数が減り洗浄後の脱ガス工程を少な
くできる効果も得られる。A vertical vapor phase growth apparatus according to a third aspect of the present invention is installed in a reaction chamber and has a vertical reaction tube for introducing a reaction gas from a lower portion and discharging the reaction gas to an upper portion, and a vertical reaction tube inserted into the reaction tube and rotating in the reaction tube. A supporting rod, a substrate holding jig which holds the substrate to be grown with its main surface facing downward only at its peripheral portion and is held by the supporting rod located above the back surface of the substrate to be grown, In a vertical vapor phase growth apparatus having an induction heated body directly mounted on the back surface and performing crystal growth using a high frequency induction heating method, the area of the bottom surface of the induction heated body is the growth substrate. The substrate holding jig is larger than the substrate holding jig so that the substrate can be held in the substrate holding jig in a separate chamber and then moved to the reaction chamber and held in the substrate holding jig receiving portion provided on the support rod. As a tool, a tubular body capable of containing the induction-heated body A plurality of substrate holding claws for holding the peripheral portion of the growth substrate with its main surface downward projecting perpendicularly to the axial direction of the support rod that the rotation is provided in the lower part of the body,
A first substrate which is provided on the upper part of the main body and has a holding ring portion larger than the outer diameter of the main body engaged with the substrate holding jig receiving portion of the support rod, and is attachable to and detachable from the support rod. The holding jig and the guided substrate which is larger than the growing substrate directly mounted on the back surface of the growing substrate with the main surface facing downward on the first substrate holding jig and slightly smaller than the inner diameter of the substrate holding jig. The substrate holding jig is characterized by having a heating body and an insulating plate having a diameter similar to that of the heating body, and the substrate to be grown is transported by the substrate holding jig. Even when holding a substrate that is sufficiently smaller than the inner diameter of the first substrate holding jig, it is not necessary to provide a step on the substrate holding claw, and the movement of the growth target substrate during substrate transfer can be prevented. You can Therefore, regardless of the size of the wafer, the positional accuracy of the wafer can be increased and the substrate can be transferred. Also, since the area of the bottom surface of the induction-heated body is made larger than that of the growth substrate, the edge effect is reduced,
The thickness unevenness of the vapor phase growth layer around the wafer can be improved,
It is possible to obtain a vapor phase growth layer having excellent uniformity within the wafer surface. Further, since the temperature difference between the peripheral portion and the central portion of the growth substrate due to the temperature distribution of the induction-heated body is reduced and the thermal distortion of the growth substrate is suppressed, the occurrence of defects such as slip lines due to this cause. Since the temperature distribution is suppressed and the temperature distribution in the wafer surface is made uniform, the distribution of the film characteristics caused by the temperature distribution is also improved, and a more uniform and good quality crystal growth layer can be obtained. As another effect, the deposition of polycrystals on the main surface and side surfaces of the curb susceptor during crystal growth can be suppressed. In particular, the deposition of polycrystals on the main surface of the carbon susceptor causes a bad contact state between the carbon susceptor and the substrate to be grown and increases the temperature distribution as the number of times of growth increases, which adversely affects reproducibility and uniformity. Therefore, maintenance is required. Since this insulating plate is carried together with the first substrate holding jig when carrying the substrate, it can be replaced each time and washed with aqua regia together with the first substrate holding jig. It can reduce the amount of dirt in the room,
It is possible to reduce the frequency of large-scale maintenance such as cleaning the carbon susceptor by removing the reaction tube. Further, since the contamination of the induction-heated body is reduced, the number of times of cleaning the induction-heated body is reduced, and the degassing step after cleaning can be reduced.
【0027】尚、試料支持台に載置した着脱可能で且つ
被成長基板の移動を防いで基板を保持する絶縁板を用い
た公知例として、特開昭61−242994号公報に開
示された装置があるが、この装置では基板と接する面を
粗面として移動しないようにしたものであり、本発明の
装置のように絶縁板の自重を利用したものとは違うもの
であり、本発明の装置の場合、基板と接する面は平坦で
あってもかまわない。An apparatus disclosed in Japanese Patent Application Laid-Open No. 61-242994 is known as a known example using an insulating plate which is mounted on a sample support and is detachable and which prevents the growth substrate from moving and holds the substrate. However, in this device, the surface in contact with the substrate is set as a rough surface so as not to move, which is different from the device using the self-weight of the insulating plate as in the device of the present invention. In this case, the surface contacting the substrate may be flat.
【0028】請求項4に示す縦型気相成長装置において
は、被成長基板を取り付けた基板保持治具を保持した支
持棒とは独立に上下方向に移動可能なサセプター支持棒
と、支持棒に保持された基板保持治具の上方に位置する
サセプター待機部とを有した構造であるので、別室で主
面を下方に向けた被成長基板を取り付けた基板保持治具
を横方向から反応室に移動して支持棒に保持して、被成
長基板の裏面上に被誘導加熱体をサセプター待機部から
下方に移動して積載することができ、被誘導加熱体を反
応室に残したまま基板搬送を行なうことができ、脱ガス
等が容易になるので、原料ガスを下部から供給し成長に
寄与しなかった不用なガスを上部から排出する構造の高
周波誘導加熱方式を用いた縦型気相成長装置において
も、被成長基板をセットする時、酸素等の吸着による反
応室への汚染が低減される効果がある。そのため成長層
の品質低下を防ぐことができる。In the vertical vapor phase growth apparatus according to the fourth aspect, a susceptor support rod that is vertically movable independently of a support rod that holds a substrate holding jig to which a substrate to be grown is attached, and the susceptor support rod. Since the structure has a susceptor standby portion located above the held substrate holding jig, the substrate holding jig with the growth substrate whose main surface faces downward in a separate chamber is moved from the lateral direction to the reaction chamber. It can be moved and held on a support rod, and the induction target can be moved downward from the susceptor standby part and loaded on the back surface of the growth substrate, and the substrate can be transferred while leaving the induction heating target in the reaction chamber. The vertical vapor phase growth using the high-frequency induction heating method with a structure in which the raw material gas is supplied from the lower part and unnecessary gas that did not contribute to the growth is discharged from the upper part, because degassing etc. is facilitated. Even in the equipment, the growth substrate is When bets, has the effect of contamination of the reaction chamber due to adsorption, such as oxygen, it is reduced. Therefore, the quality deterioration of the growth layer can be prevented.
【0029】尚、被誘導加熱体を上下に移動する機構を
設けた装置としては、特開平5−47666号公報の第
2の実施例のパルスジェット法を実施可能な装置があ
る。しかし、本発明の装置のように被成長基板を保持し
た基板保持治具に対して独立に移動可能にするためのサ
セプター移動機構を有していないので同様な効果は期待
できない。As a device provided with a mechanism for moving the induction-heated body up and down, there is a device capable of carrying out the pulse jet method of the second embodiment of Japanese Patent Application Laid-Open No. 5-47666. However, since the apparatus of the present invention does not have a susceptor moving mechanism for independently moving the substrate holding jig holding the growth substrate, the same effect cannot be expected.
【0030】請求項5に示す縦型気相成長装置では、請
求項4の縦型気相成長装置において、まだ課題の残って
いた密着性については、被誘導加熱体が被成長基板の裏
面上に直に積載したときに、被成長基板の裏面の上方に
ある支持棒と一緒に回転するサセプター支持棒に対して
上下方向に遊びを持つ構造を有しており、更に被誘導加
熱体は多少動くことができるので、万一、被誘導加熱体
の底面と被成長基板の裏面の平行度が多少ずれている場
合でもそのずれを吸収でき、一部を強く押し付けすぎる
こともなく、複数個の基板保持爪には均一に力が加わ
り、被誘導加熱体、被成長基板、基板保持爪の間は密着
性が良くなる。しかも再現性良く均一に基板を保持でき
るので、再現性の良い膜ができるという効果が付加され
る。In the vertical type vapor phase growth apparatus according to claim 5, in the vertical type vapor phase growth apparatus according to claim 4, there is still a problem of adhesion. It has a structure with vertical play against the susceptor support rod that rotates together with the support rod above the back surface of the substrate to be grown when loaded directly onto the substrate. Since it can move, even if the parallelism between the bottom surface of the induction-heated body and the back surface of the growth substrate deviates to some extent, the deviation can be absorbed, and a part of it cannot be pressed too strongly. A force is uniformly applied to the substrate holding claw, and the adhesion between the induction-heated body, the substrate to be grown, and the substrate holding claw is improved. Moreover, since the substrate can be held uniformly with good reproducibility, the effect of forming a film with good reproducibility is added.
【0031】また、被誘導加熱体を、被成長基板の裏面
の上方にある支持棒と一緒に回転するサセプター支持棒
に保持固定された主となる第1の被誘導加熱体と、第1
の被誘導加熱体と該被成長基板の間に第1の被誘導加熱
体よりも軽く第1の被誘導加熱体と接しないで該被成長
基板の裏面上に直に積載した第2の被誘導加熱体とに分
けた請求項6の縦型気相成長装置においては、該被誘導
加熱体の自重による被成長基板に加わる力が低減され、
被成長基板に加わる応力を低減できるので、スリップラ
イン等の欠陥、ウエハーの反り等が低減される。そのた
め良質なエピタキシャル成長層を得ることができる。ま
た、第1の被誘導加熱体は常に反応室内にあり、基板と
一緒に搬送される第2の被誘導加熱体は薄いので洗浄も
容易で吸着した不純物ガスも容易に脱ガスできるので酸
素等の吸着による反応室の汚染が低減され成長層の品質
低下を防ぐことができる。Further, a main first induction-heated body fixed to a susceptor support rod which rotates together with the support rod above the back surface of the substrate to be grown, and a first induction-heated body.
Between the induction-heated body and the substrate to be grown, which is lighter than the first induction-heated body and does not come into contact with the first induction-heated body, and is directly stacked on the back surface of the growth-target substrate. In the vertical vapor deposition apparatus according to claim 6, which is divided into an induction heating body, the force applied to the growth substrate by the self-weight of the induction heating body is reduced,
Since the stress applied to the substrate to be grown can be reduced, defects such as slip lines and wafer warp can be reduced. Therefore, a good quality epitaxial growth layer can be obtained. Further, the first induction-heated body is always in the reaction chamber, and the second induction-heated body conveyed together with the substrate is thin, so cleaning is easy and adsorbed impurity gas can be easily degassed, so that oxygen or the like Contamination of the reaction chamber due to the adsorption of R.
【0032】尚、被誘導加熱体を交換部と加熱部とに分
けた公知例として、実公昭63−44463号公報に開
示された装置がある。しかしこれは交換部を交換可能に
することを目的として考案されたものであって、反応ガ
スを下部から導入して上部に排出する縦型気相成長装置
においては被誘導加熱体の自重による基板に加わる力を
低減する効果は期待できない。An apparatus disclosed in Japanese Utility Model Publication No. 63-44463 is a known example in which the induction heating body is divided into an exchange section and a heating section. However, this was designed with the purpose of making the exchange part exchangeable, and in a vertical vapor phase growth apparatus in which a reaction gas is introduced from the lower part and discharged to the upper part, the substrate due to the self-weight of the induction-heated body is used. The effect of reducing the force applied to can not be expected.
【0033】また、請求項7に示す縦型気相成長装置
は、請求項6の縦型気相成長装置の、第2の被誘導加熱
体の底面の面積を被成長基板よりも大きくし、前記基板
保持治具は回転する支持棒の軸方向に直角に複数個の基
板保持爪を有しており、基板保持爪の上面すなわち被成
長基板に接する方の面には被成長基板の厚さよりも浅い
段部が形成されていて、その段部に被成長基板が保持さ
れる構造を有するので、段部を有する基板保持爪により
ウエハーの大きさによらずウエハー挿入時の位置精度を
高くしてウエハーを保持することができる。また、該被
誘導加熱体の自重による被成長基板に加わる力の低減に
よってスリップライン等の欠陥、ウエハーの反りが低減
される。また、被誘導加熱体の底面の面積を被成長基板
よりも大きくしているのでエッジ効果が低減され、ウエ
ハー周辺部の気相成長層の厚さむら等も改善できるの
で、膜厚の均一性を良くすることができる。さらに、被
誘導加熱体の温度分布が原因である被成長基板の周辺部
と中心部の温度差は小さくなり被成長基板の熱歪が抑え
られるので、この原因によるスリップライン等の欠陥の
発生が抑えられる。また、ウエハー面内の温度分布の均
一性も改善されるので、温度分布が原因であった膜特性
の分布も改善できる。このようなわけでウエハー面内の
均一性に優れた良質なエピタキシャル成長層を得ること
ができる。The vertical vapor phase growth apparatus according to claim 7 is the vertical vapor phase growth apparatus according to claim 6, in which the area of the bottom surface of the second induction-heated body is larger than that of the growth substrate. The substrate holding jig has a plurality of substrate holding claws at right angles to the axial direction of the rotating support rod, and the upper surface of the substrate holding claws, that is, the surface in contact with the substrate to be grown, has a thickness larger than that of the substrate to be grown. Since a shallow step is formed and the substrate to be grown is held on the step, the substrate holding claw having the step increases the position accuracy when inserting the wafer regardless of the size of the wafer. Can hold the wafer. Further, by reducing the force applied to the growth substrate by the weight of the induction-heated body, defects such as slip lines and wafer warp are reduced. In addition, since the area of the bottom surface of the induction-heated body is made larger than that of the growth substrate, the edge effect is reduced and unevenness in the thickness of the vapor phase growth layer around the wafer can be improved. Can be better. Furthermore, since the temperature difference between the peripheral portion and the central portion of the growth substrate due to the temperature distribution of the induction-heated body is reduced and the thermal strain of the growth substrate is suppressed, the occurrence of defects such as slip lines due to this cause. It can be suppressed. In addition, the uniformity of the temperature distribution within the wafer surface is also improved, so that the distribution of the film characteristics caused by the temperature distribution can also be improved. As a result, it is possible to obtain a high-quality epitaxial growth layer having excellent uniformity within the wafer surface.
【0034】また、請求項8に示す縦型気相成長装置
は、請求項6に示す縦型気相成長装置において、第2の
被誘導加熱体は、被成長基板の裏面の上方にある支持棒
と一緒に回転するサセプター支持棒に保持された第1の
被誘導加熱体に対して上下方向に遊びを持って保持され
る構造であるので、被誘導加熱体の自重による被成長基
板に加わる力の低減によってスリップライン等の欠陥、
ウエハーの反りが低減されると共に、第2の被誘導加熱
体をも反応室から外に出す必要がなくなり、脱ガス等が
容易になるので、被成長基板搬送時の酸素等の吸着によ
る反応室への不純物の持込みが更に低減される効果があ
る。そのため汚染が更に低減され、成長層の品質低下を
防ぐことができる。The vertical vapor phase growth apparatus according to claim 8 is the vertical vapor phase growth apparatus according to claim 6, wherein the second induction-heated body is supported above the rear surface of the growth substrate. Since the structure is held with vertical play with respect to the first induction-heated body held by the susceptor support rod that rotates together with the rod, it is added to the growth substrate by the weight of the induction-heated body itself. Defects such as slip lines due to reduced force,
Since the warp of the wafer is reduced and the second induction-heated body does not have to be taken out of the reaction chamber, degassing and the like are facilitated. This has the effect of further reducing the amount of impurities brought into the device. Therefore, contamination can be further reduced and deterioration of the quality of the grown layer can be prevented.
【0035】請求項9に示す縦型気相成長装置は、請求
項8に示す縦型気相成長装置において、第2の被誘導加
熱体と被成長基板の間に被成長基板より大きく前記基板
保持治具の内径よりも若干小さい第2の被誘導加熱体と
同程度の直径の絶縁板を挿入するので、基板保持治具の
基板保持爪に被成長基板を載せてその上に該絶縁板を載
せているので、絶縁板の自重により被成長基板を押さえ
ることができ、基板保持治具の内径よりも充分小さい基
板を保持する場合でも基板保持爪に段部を設ける必要が
なく、基板搬送時の被成長基板の移動を防止することが
できる。このように本発明ではウエハーの大きさによら
ずウエハーの位置精度を高くして基板搬送することがで
きる。また、被誘導加熱体の底面の面積を被成長基板よ
りも大きくしているのでエッジ効果が低減され、ウエハ
ー周辺部の気相成長層の厚さむら等が改善でき、ウエハ
ー面内の膜厚の均一性に優れた気相成長層を得ることが
できる。また、第2の被誘導加熱体の温度分布が原因で
ある被成長基板の周辺部と中心部の温度差は小さくなり
被成長基板の熱歪が抑えられるので、この原因によるス
リップライン等の欠陥の発生が抑えられる。更にウエハ
ー面内の温度分布が均一化されるので、温度分布が原因
であった膜特性の分布も改善され、さらに均一で良質の
結晶成長層を得ることができる。また、結晶成長時にカ
ーボンウエハー上への多結晶の堆積が抑えられる効果も
得られる。この絶縁板は基板搬送時に基板保持治具と一
緒に搬送するのでそのつど交換、洗浄ができるので、反
応管を取り外してカーボンサセプター等を洗浄するよう
な大掛かりなメンテナンスの頻度を少なくできる。A vertical vapor phase growth apparatus according to a ninth aspect is the vertical vapor phase growth apparatus according to the eighth aspect, wherein the substrate is larger than the growth substrate between the second induction-heated body and the growth substrate. Since the insulating plate having the same diameter as the second induction-heated body, which is slightly smaller than the inner diameter of the holding jig, is inserted, the substrate to be grown is placed on the substrate holding claw of the substrate holding jig and the insulating plate is placed thereon. Since the substrate to be grown is held by the weight of the insulating plate, it is not necessary to provide a step on the substrate holding claw even when holding a substrate that is sufficiently smaller than the inner diameter of the substrate holding jig. It is possible to prevent the growth substrate from moving during this time. As described above, according to the present invention, it is possible to transfer the substrate with high wafer position accuracy regardless of the size of the wafer. In addition, since the area of the bottom surface of the induction-heated body is made larger than that of the growth substrate, the edge effect is reduced, the thickness unevenness of the vapor phase growth layer around the wafer can be improved, and the film thickness within the wafer surface can be improved. It is possible to obtain a vapor phase growth layer having excellent uniformity. Further, since the temperature difference between the peripheral portion and the central portion of the growth substrate due to the temperature distribution of the second induction-heated body is reduced and the thermal distortion of the growth substrate is suppressed, defects such as slip lines due to this cause are caused. Can be suppressed. Further, since the temperature distribution in the wafer surface is made uniform, the distribution of film characteristics caused by the temperature distribution is also improved, and a more uniform and high quality crystal growth layer can be obtained. In addition, the effect of suppressing the deposition of polycrystal on the carbon wafer during crystal growth can be obtained. Since this insulating plate is transferred together with the substrate holding jig during the transfer of the substrate, it can be replaced and cleaned each time, so that the frequency of large-scale maintenance such as removing the reaction tube and cleaning the carbon susceptor can be reduced.
【0036】請求項10に示す縦型気相成長装置は、請
求項6に記載した縦型気相成長装置において、被成長基
板と第2の被誘導加熱体を取り付けた基板保持治具を保
持する支持棒とは独立に上下方向に移動可能なサセプタ
ー支持棒と、支持棒に保持された基板保持治具の上方に
サセプター待機部とを有した構造であるので、別室で主
面を下方に向けた被成長基板とその上に第2の被誘導加
熱体を取り付けた基板保持治具を横方向から反応室に移
動して支持棒に保持して、第2の被誘導加熱体を被成長
基板の裏面上に数mm離した位置、つまり、被成長基板
に被誘導加熱体の自重が伝わらなく且つ誘導加熱の可能
な位置に誘導加熱体をサセプター待機部から下方に移動
し、その位置を制御することができる。また、被誘導加
熱体を反応室に残したまま基板搬送を行なうことがで
き、被成長基板をセットする時、酸素等の吸着による反
応室の汚染が低減され成長層の品質低下を防ぐことがで
きる効果が付加される。A vertical vapor phase growth apparatus according to a tenth aspect is the vertical vapor phase growth apparatus according to the sixth aspect, which holds a substrate holding jig on which a substrate to be grown and a second induction heated body are attached. Since the structure has a susceptor support rod that can move in the vertical direction independently of the support rod and a susceptor standby portion above the substrate holding jig held by the support rod, the main surface faces downward in a separate room. The second substrate to be heated and the second substrate to be heated on which the second object to be heated are mounted are moved from the lateral direction to the reaction chamber and held by the supporting rod to grow the second member to be heated on induction. Move the induction heating element downward from the susceptor standby part to a position several mm away from the back surface of the substrate, that is, a position where the weight of the induction heating element is not transmitted to the growth substrate and induction heating is possible, Can be controlled. Further, the substrate can be transported while leaving the induction-heated body left in the reaction chamber, and when the growth substrate is set, contamination of the reaction chamber due to adsorption of oxygen and the like can be reduced and deterioration of the quality of the growth layer can be prevented. The effect that can be added is added.
【0037】請求項11に示す縦型気相成長装置は、被
誘導加熱体を、被成長基板の裏面の上方にある支持棒と
一緒に回転するサセプター支持棒に保持された主となる
第1の被誘導加熱体と、被成長基板の裏面上に直に接し
た第1の被誘導加熱体よりも軽くて被成長基板よりも大
きい第2の被誘導加熱体とに分けて、第2の被誘導加熱
体は被成長基板の裏面の上方にある回転する支持棒に保
持された第1の基板保持治具により保持し、被成長基板
は前記基板保持治具とは別の第2の基板保持治具により
第2の被誘導加熱体に保持した構造であるので、被成長
基板に加わる力は重い被誘導加熱体の自重によるもので
はなく、第2の基板保持治具を用いて第2の被誘導加熱
体に保持した時に加わる力が主であり、適切な力で保持
することにより被成長基板に加わる力が低減され、被成
長基板に加わる応力を低減できるので、スリップライン
等の欠陥、ウエハーの反り等が低減される。また、第2
の被誘導加熱体の底面の面積を被成長基板よりも大きく
しているのでエッジ効果が低減され、ウエハー周辺部の
気相成長層の厚さむら等も改善でき、膜厚の均一性がよ
くなる。さらに、被誘導加熱体の温度分布が原因である
被成長基板の周辺部と中心部の温度差は小さくなり被成
長基板の熱歪が抑えられるので、この原因によるスリッ
プライン等の欠陥の発生が抑えられる。さらにウエハー
面内の温度分布が均一化されるので、温度分布が原因で
あった膜特性の分布も改善される。このように本発明の
装置ではウエハー面内の均一性に優れた良質なエピタキ
シャル成長層を得ることができる。さらに、第2の基板
保持治具を取り付ける位置を適当に設けることで不定形
のウエハーを用いることも可能となる。また、ウエハー
の大きさ、形状によらず位置精度を高くしてウエハーを
保持することができる。According to the eleventh aspect of the vertical vapor phase growth apparatus, the first main body in which the induction heated body is held by the susceptor support rod which rotates together with the support rod above the back surface of the substrate to be grown. And the second induction-heated body, which is lighter than the first induction-heated body and directly larger than the growth-target substrate, which is directly in contact with the back surface of the growth-target substrate. The induction-heated body is held by a first substrate holding jig held by a rotating support rod above the back surface of the growth substrate, and the growth substrate is a second substrate different from the substrate holding jig. Since the structure is held on the second induction-heated body by the holding jig, the force applied to the growth substrate is not due to the heavy weight of the heavy induction-heated body, but the second substrate holding jig is used to The force mainly applied when held by the induction-heated body of the The force applied to the long substrate is reduced, since it is possible to reduce the stress applied to the growth substrate, defects such as slip lines, warpage of the wafer is reduced. Also, the second
Since the area of the bottom surface of the induction heated body is larger than that of the substrate to be grown, the edge effect is reduced, the unevenness of the vapor phase growth layer around the wafer can be improved, and the uniformity of the film thickness is improved. . Furthermore, since the temperature difference between the peripheral portion and the central portion of the growth substrate due to the temperature distribution of the induction-heated body is reduced and the thermal strain of the growth substrate is suppressed, the occurrence of defects such as slip lines due to this cause. It can be suppressed. Further, since the temperature distribution in the wafer surface is made uniform, the distribution of the film characteristics caused by the temperature distribution is also improved. As described above, with the apparatus of the present invention, it is possible to obtain a high-quality epitaxial growth layer having excellent uniformity within the wafer surface. Furthermore, by providing an appropriate position for attaching the second substrate holding jig, it is possible to use an amorphous wafer. In addition, the wafer can be held with high positional accuracy regardless of the size and shape of the wafer.
【0038】[0038]
【実施例】以下、本発明の実施例を図面を参照して詳細
に説明する。図1は、本発明の縦型気相成長装置の請求
項1、請求項2、請求項4、請求項5に対応した第一の
実施例を示す断面図である。また、図2は、図1中のA
領域の拡大図であり、図3は、図1中のB方向から見た
図である。これらの図では、本発明をより容易に理解で
きるように簡略化して示している。図中符号1は反応室
に設置された反応管を示しており、反応管1は石英ガラ
スで作られた二重管構造であり、下部に設けられた給水
口2から上部の排水口3に冷却水を流して反応管1を冷
却する構造となっている。反応管1内への原料ガス供給
口4とキャリアガス供給口5は反応管1の下部に設けら
れ、反応管1からのガス排出口6は上部に設けられてい
る。Embodiments of the present invention will now be described in detail with reference to the drawings. FIG. 1 is a cross-sectional view showing a first embodiment corresponding to claims 1, 2, 4, and 5 of the vertical vapor phase growth apparatus of the present invention. Further, FIG. 2 shows A in FIG.
FIG. 3 is an enlarged view of the region, and FIG. 3 is a view seen from the direction B in FIG. 1. In these figures, the present invention is shown in a simplified form for easier understanding. In the figure, reference numeral 1 indicates a reaction tube installed in the reaction chamber, and the reaction tube 1 has a double tube structure made of quartz glass, and from the water supply port 2 provided at the lower part to the drain port 3 at the upper part. The reaction tube 1 is cooled by flowing cooling water. The raw material gas supply port 4 and the carrier gas supply port 5 into the reaction tube 1 are provided in the lower part of the reaction tube 1, and the gas discharge port 6 from the reaction tube 1 is provided in the upper part.
【0039】反応管1内のガス供給口4及び5とガス排
出口6の間には、回転する支持棒10に保持され被成長
基板8を保持する基板保持治具9と、被誘導加熱体であ
る直径70mm、厚さ35mmのカーボンサセプター7
を配置している。カーボンサセプター7は直径50m
m、厚さ350μmである被成長基板8よりも片側1c
m大きく、その上方にある支持棒10内に挿通され支持
棒10と一緒に回転するサセプター支持棒14に対して
長いカーボン固定ネジ15によって上下方向に遊びを持
って保持され、被成長基板8上に積載されている。すな
わちこの例では、カーボンサセプター7はサセプター支
持棒14に対してカーボン固定ネジ15によって固定さ
れているが、カーボン固定ネジ15は長く、サセプター
支持棒14の下部にはネジの直径より大きくてネジの頭
より小さな穴があいており、カーボンサセプター7が被
成長基板8上に積載されている時は、サセプター支持棒
14の重さがカーボンサセプター7に加わらないような
構造になっている。また、カーボンサセプター7はサセ
プター支持棒14を図示しないモーター等による移動機
構により上下に動かすことにより、回転する支持棒10
とは独立に上下方向に移動可能である。つまり、サセプ
ター支持棒14を上に移動したときはサセプター支持棒
14にカーボン固定ネジ15の頭がひっかかるため、カ
ーボンサセプター7を上に移動することができる。Between the gas supply ports 4 and 5 and the gas discharge port 6 in the reaction tube 1, a substrate holding jig 9 held by a rotating support rod 10 for holding a growth substrate 8 and an induction heating body. 70mm diameter and 35mm thick carbon susceptor 7
Has been arranged. Carbon susceptor 7 has a diameter of 50 m
m, one side of the growth substrate 8 having a thickness of 350 μm
A large carbon fixing screw 15 holds the susceptor support rod 14 which is larger than the support rod 10 and which is inserted into the support rod 10 above the support rod 10 and rotates together with the susceptor support rod 10. Is loaded on. That is, in this example, the carbon susceptor 7 is fixed to the susceptor support rod 14 by the carbon fixing screw 15. However, the carbon fixing screw 15 is long, and the lower portion of the susceptor support rod 14 has a diameter larger than that of the screw. There is a hole smaller than the head, and the structure is such that the weight of the susceptor support rod 14 is not added to the carbon susceptor 7 when the carbon susceptor 7 is loaded on the growth substrate 8. Further, the carbon susceptor 7 is rotated by moving the susceptor support rod 14 up and down by a moving mechanism such as a motor (not shown).
It can move up and down independently of. That is, when the susceptor support rod 14 is moved upward, the head of the carbon fixing screw 15 is caught on the susceptor support rod 14, so that the carbon susceptor 7 can be moved upward.
【0040】主面を下方に向けた被成長基板8は支持棒
10に保持された基板保持治具9により周辺部のみで保
持されている。尚、基板保持治具9は被誘導加熱体であ
るカーボンサセプター7がすっぽり入って若干余裕があ
るように、カーボンサセプター7の外径より一回り大き
い内径を有する筒状の本体9aと、この本体下部に設け
られ、回転する支持棒10の軸方向に直角に突出する複
数個の基板保持爪12(この例では3つの基板保持爪)
を有しており、基板保持爪12の上面すなわち被成長基
板に8に接する方の面には被成長基板8の厚さよりも浅
い約300μmの段部16が形成されていて、その段部
16に被成長基板8が保持されている。また、基板保持
治具9は支持棒10に対して取り外し可能であり、別室
で被成長基板8をセットした後に反応管1内に運ばれ、
支持棒10に設けた基板保持治具受け部25に保持でき
るように、基板保持治具9の上部には本体9aの外径よ
りも大きな保持用リング部26を設けており、該保持用
リング部26を上記基板保持治具受け部25に掛合する
ことにより、基板保持治具9が支持棒10に保持される
構造となっている。勿論、支持棒10もサセプター支持
棒14と同様に、別室の横方向に移動するアームとの間
で基板搬送可能なように、図示しないモーター等による
移動機構により上下方向に移動可能である。つまりこの
ような、被誘導加熱体が入ることが可能な筒状の本体9
aと、本体下部に設けられ、主面を下方に向けて被成長
基板8を保持する段部16を有した基板保持爪12と、
本体上部に設けられ本体の外径よりも大きな保持用リン
グ部26とを有し、支持棒10に対して着脱可能な基板
保持治具9を用いることで、筒状の本体9aの内径より
も充分小さい被成長基板8においても移動しないように
基板搬送できる。勿論、被成長基板8の径が本体9aの
内径と近い場合は、基板保持爪12が段部を有していな
い平坦な形状でも充分安定に基板保持できるので、段部
は無くてもかまわない。尚、上記の段部を有した基板保
持爪の効果は、図17に示したような基板保持治具10
9と支持棒110が一体化されている従来の装置のよう
な場合でも、被成長基板をその大きさによらず挿入時に
位置精度良く保持できることは明らかである。The substrate 8 to be grown whose main surface faces downward is held only by the peripheral portion by the substrate holding jig 9 held by the supporting rod 10. The substrate holding jig 9 has a cylindrical main body 9a having an inner diameter slightly larger than the outer diameter of the carbon susceptor 7 so that the carbon susceptor 7 as an induction-heated body can be fitted in and there is a little margin. A plurality of substrate holding claws 12 (three substrate holding claws in this example) provided on the lower portion and projecting at right angles to the axial direction of the rotating support rod 10.
And a step portion 16 of about 300 μm, which is shallower than the thickness of the growth substrate 8, is formed on the upper surface of the substrate holding claw 12, that is, the surface which is in contact with the growth substrate 8. The substrate to be grown 8 is held on. Further, the substrate holding jig 9 can be detached from the support rod 10, and is carried into the reaction tube 1 after the growth substrate 8 is set in another chamber,
A holding ring portion 26 having a larger diameter than the outer diameter of the main body 9a is provided above the substrate holding jig 9 so that the holding ring 25 can be held by the substrate holding jig receiving portion 25 provided on the support rod 10. The substrate holding jig 9 is held by the support rod 10 by engaging the portion 26 with the substrate holding jig receiving portion 25. Of course, like the susceptor support rod 14, the support rod 10 can also be moved vertically by a moving mechanism such as a motor (not shown) so that the substrate can be transferred between the support rod 10 and an arm that moves in a lateral direction in another chamber. That is, such a tubular body 9 into which the induction-heated body can be inserted.
a, a substrate holding claw 12 provided at the lower part of the main body and having a step portion 16 for holding the growth substrate 8 with its main surface facing downward,
By using the substrate holding jig 9 that is provided on the upper part of the main body and has the holding ring portion 26 that is larger than the outer diameter of the main body, and is detachable from the support rod 10, The substrate can be transported so that it does not move even on the sufficiently small growth substrate 8. Of course, when the diameter of the substrate 8 to be grown is close to the inner diameter of the main body 9a, the substrate holding claw 12 can hold the substrate sufficiently stably even if it has a flat shape without a step, so that the step may be omitted. . It should be noted that the effect of the substrate holding claw having the above stepped portion is that the substrate holding jig 10 as shown in FIG.
Even in the case of a conventional apparatus in which the 9 and the support rod 110 are integrated, it is clear that the growth substrate can be held with high positional accuracy at the time of insertion regardless of its size.
【0041】図1〜3に示す縦型気相成長装置おいて、
ウエハーセットは通常N2 ボックス等、反応室とは別室
の外気に直接触れない所で行なわれるが、多孔質のカー
ボンには雰囲気中の微量の酸素等が吸着し易く、そのた
め成長層の品質を悪くする原因となる。そこでこの場
合、被成長基板8を保持する基板保持治具9だけを取り
外して別室に搬送し、カーボンサセプター7は反応管1
を含む反応室から出さないようにして雰囲気中の酸素等
が吸着しないようにしている。また、基板保持治具9の
材料としては、通常、王水等で洗浄が容易な絶縁物が用
いられ、本実施例では加工が容易で安価な石英を用いて
いる。そして、サセプター支持棒14により、回転する
支持棒10とは独立に上下方向に移動可能なカーボンサ
セプター7が、支持棒10に保持された基板保持治具9
の上部に設けたサセプター待機部13から基板保持治具
9の内側の下方に降りて周辺部のみで保持されている被
成長基板8の裏面上に直に積載される。このような構成
にすることでカーボンサセプター7に対する被成長基板
8の位置を再現性良く合わせることができる。また、前
記したようにカーボンサセプター7は回転する支持棒1
0に対して上下方向に遊びを持っており、また、カーボ
ンサセプター7と基板保持治具9の間には多少隙間があ
り、カーボンサセプター7は多少動くことができるの
で、万一、カーボンサセプター7の底面と被成長基板8
の裏面の平行度が多少ずれていた場合でも、そのずれを
吸収できるので、一部を強く押し付けすぎることもな
く、複数個の基板保持爪12には均一に力が加わり、カ
ーボンサセプター7、被成長基板8、基板保持爪12の
間は常に密着性が良く、しかも再現性良く、更に均一に
基板を保持できる。また、このような構成とすること
で、カーボンサセプター7の側面への多結晶の堆積を低
減でき、基板保持治具9は随時洗浄可能なので、反応管
1を外してカーボンサセプター7等を洗浄するような大
掛かりなメンテナンスの頻度を低減できる。また、被誘
導加熱体7の汚れが低減されることから、被誘導加熱体
を洗浄する回数が減り、洗浄後の脱ガス工程を少なくで
きる。In the vertical vapor phase growth apparatus shown in FIGS.
The wafer set is usually carried out in a room separate from the reaction chamber, such as an N 2 box, which does not come into direct contact with the outside air. However, a small amount of oxygen in the atmosphere is easily adsorbed on the porous carbon, so that the quality of the growth layer is improved. It will cause worse. Therefore, in this case, only the substrate holding jig 9 for holding the growth substrate 8 is removed and conveyed to another chamber, and the carbon susceptor 7 is attached to the reaction tube 1.
The oxygen in the atmosphere is not adsorbed so that it is not taken out from the reaction chamber containing. In addition, as the material of the substrate holding jig 9, an insulating material that is easily washed with aqua regia or the like is usually used, and in this embodiment, quartz that is easy to process and inexpensive is used. Then, the carbon susceptor 7 which is vertically movable independently of the rotating support rod 10 by the susceptor support rod 14 is provided with the substrate holding jig 9 held by the support rod 10.
From the susceptor standby portion 13 provided on the upper part of the substrate, the substrate is lowered below the inside of the substrate holding jig 9 and directly stacked on the back surface of the growth substrate 8 held only in the peripheral portion. With such a structure, the position of the growth substrate 8 with respect to the carbon susceptor 7 can be aligned with good reproducibility. In addition, as described above, the carbon susceptor 7 rotates the supporting rod 1
0 has a play in the vertical direction, and there is a gap between the carbon susceptor 7 and the substrate holding jig 9, and the carbon susceptor 7 can move a little. Bottom surface and growth substrate 8
Even if the parallelism of the back surface of the substrate is slightly deviated, the deviation can be absorbed, so that a part of the substrate holding claws 12 is uniformly pressed without being pressed too strongly, and the carbon susceptor 7, Adhesion between the growth substrate 8 and the substrate holding claw 12 is always good, reproducibility is good, and the substrate can be held uniformly. Further, with such a configuration, the deposition of polycrystal on the side surface of the carbon susceptor 7 can be reduced, and the substrate holding jig 9 can be cleaned at any time. Therefore, the reaction tube 1 is removed to clean the carbon susceptor 7 and the like. The frequency of such large-scale maintenance can be reduced. Further, since the contamination of the induction-heated body 7 is reduced, the number of times the induction-heated body is cleaned is reduced, and the degassing step after cleaning can be reduced.
【0042】さて、図1〜3に示す縦型気相成長装置お
いては、原料ガス供給口4から供給されたガスは被成長
基板8の主面に吹き付けられガス排出口6へと向かう。
つまり、反応管1内の下部から上部へと向かうガスの流
れに対して直角に被成長基板8を配置している。そし
て、反応管1の周囲に設けられた高周波加熱コイル11
によって高周波電界を印加することによりカーボンサセ
プター7の発熱が生じ被成長基板8が加熱され、被成長
基板8の表面に達した原料ガスの分解と被成長基板8表
面での表面反応により結晶成長するものである。尚、成
長中は回転する支持棒10により被成長基板8、カーボ
ンサセプター7等も一緒に回転する。In the vertical vapor phase growth apparatus shown in FIGS. 1 to 3, the gas supplied from the source gas supply port 4 is blown onto the main surface of the substrate 8 to be grown and heads to the gas discharge port 6.
That is, the growth substrate 8 is arranged at right angles to the gas flow from the lower part to the upper part in the reaction tube 1. Then, the high frequency heating coil 11 provided around the reaction tube 1
The carbon susceptor 7 generates heat by applying a high frequency electric field to heat the growth substrate 8, and crystal growth occurs due to decomposition of the source gas reaching the surface of the growth substrate 8 and surface reaction on the surface of the growth substrate 8. It is a thing. During growth, the substrate 8 to be grown, the carbon susceptor 7, etc. are also rotated by the rotating support rod 10.
【0043】このような構造の縦型気相成長装置におい
ては、ガス供給口4及び5からのガスの流れ方向とカー
ボンサセプター7等の熱により加熱され浮力を持ったガ
スの流れ方向が一致するために、成長に寄与しなかった
不用なガスは原料ガスと混合しにくく、原料ガスの組成
変化等が防止され、高品質な結晶ができる。尚、図中の
細い矢印はガスの流れの概略を示している。また、カー
ボンサセプター7の底面の面積を被成長基板8よりも大
きくしているので被成長基板8上での流速はほぼ等し
く、流速が速くなる領域はカーボンサセプター7のエッ
ジ部分に移動し、被成長基板8上での供給される原料ガ
スは面内でほぼ等しくなるので、被成長基板8のエッジ
部分での成長速度が大きくなることはなく、ウエハー周
辺部の成長層の厚さむら等が改善され、ウエハー面内の
均一性に優れた気相成長層が得られる。このエッジ部分
の盛り上がりは原料ガス供給量とキャリアガス供給量の
比を変えても、他のパラメータを変えても中心付近が均
一になるような条件を選んだ場合、カーボンサセプター
7と被成長基板8の大きさが同様な場合には周囲約1c
m生じていたが、カーボンサセプター7の底面の面積を
被成長基板8よりも大きくすることで改善できた。この
ようなわけで、カーボンサセプター7は基板よりも片側
1cm以上大きくすることが望ましい。In the vertical vapor phase growth apparatus having such a structure, the flow direction of the gas from the gas supply ports 4 and 5 and the flow direction of the gas heated by the heat of the carbon susceptor 7 and having buoyancy coincide with each other. Therefore, the unnecessary gas that has not contributed to the growth is difficult to mix with the raw material gas, the composition change of the raw material gas is prevented, and high quality crystals can be formed. The thin arrows in the figure show the outline of the gas flow. Further, since the area of the bottom surface of the carbon susceptor 7 is made larger than that of the substrate 8 to be grown, the flow velocity on the substrate 8 to be grown is almost equal, and the region where the flow velocity becomes fast moves to the edge part of the carbon susceptor 7, Since the source gases supplied on the growth substrate 8 are substantially equal in the plane, the growth rate at the edge portion of the growth substrate 8 does not increase, and the uneven thickness of the growth layer in the peripheral portion of the wafer is not generated. An improved vapor phase growth layer having excellent in-plane uniformity can be obtained. If the condition that the vicinity of the center is uniform is selected even if the ratio of the supply amount of the source gas to the supply amount of the carrier gas is changed or other parameters are changed, the swelling of the edge portion is selected, the carbon susceptor 7 and the substrate to be grown are grown. If the size of 8 is the same, the circumference is about 1c
However, it could be improved by making the area of the bottom surface of the carbon susceptor 7 larger than that of the growth substrate 8. For this reason, it is desirable that the carbon susceptor 7 is larger than the substrate by 1 cm or more on each side.
【0044】ここで、従来の構造であるカーボンサセプ
ターと基板の直径が同じである装置と、本実施例のカー
ボンサセプター7が片側1cm大きい構造の縦型気相成
長装置で、直径50mmのGaAs基板を用いたときの
膜厚分布の例をそれぞれ図4と図5に示す。図4、図5
より明らかなように、本実施例の装置では、ウエハー周
辺部での均一性が改善されていることがわかる。また、
被誘導加熱体の温度分布が原因である被成長基板の周辺
部と中心部の温度差は小さくなり被成長基板の熱歪が抑
えられるので、この原因によるスリップライン等の欠陥
の発生が抑えられ、また、被成長基板の温度分布が均一
化されるので、温度分布が原因であった膜特性の分布も
改善され、さらに均一で良質の結晶成長層を得ることが
できるのである。Here, a conventional structure of a carbon susceptor having the same diameter as the substrate and a vertical vapor phase growth device having a structure in which the carbon susceptor 7 of this embodiment is 1 cm larger on one side are used. An example of the film thickness distribution when using is shown in FIGS. 4 and 5, respectively. 4 and 5
As is clearer, it can be seen that the apparatus of this embodiment has improved uniformity in the peripheral portion of the wafer. Also,
Since the temperature difference between the peripheral part and the central part of the growth substrate due to the temperature distribution of the induction-heated body is reduced and the thermal strain of the growth substrate is suppressed, the occurrence of defects such as slip lines due to this cause is suppressed. Further, since the temperature distribution of the substrate to be grown is made uniform, the distribution of film characteristics caused by the temperature distribution is also improved, and a more uniform and high quality crystal growth layer can be obtained.
【0045】次に、図6は本発明の縦型気相成長装置の
第2の実施例を示す基板保持部の断面図であり、本発明
の請求項3を説明するものである。本実施例による装置
の全体構成は図1に示した第1の実施例と同様である
が、第1の実施例と違うところは、基板保持爪12は段
部が無く平坦な形状であり、また、カーボンサセプター
7と被成長基板8の裏面の間に絶縁板24が挿入されて
いることである。このような構成にすると、着脱可能な
基板保持治具9の基板保持爪12に被成長基板を載せて
その上に絶縁板24を載せて基板搬送すると、絶縁板2
4の自重により被成長基板8を押さえることができ、基
板保持治具9の内径よりも充分小さい基板を保持する場
合でも基板保持爪12に段部を設ける必要がなく、基板
搬送時の被成長基板の移動を防止することができ、第1
の実施例の装置とほぼ同様の効果が得られる。その他、
本実施例の装置においては、結晶成長時にカーボンサセ
プター主面上への多結晶の堆積が抑えられる効果も得ら
れる。カーボンサセプター7上への多結晶の堆積は成長
回数を重ねるとカーボンサセプター7と被成長基板8と
の接触状態を悪くして温度分布を大きくし再現性、均一
性などに悪影響を及ぼす原因になるのでメンテナンスが
必要である。しかし本実施例の装置では、カーボンサセ
プター7と被成長基板8の間に絶縁板24が挿入されて
おり、この絶縁板24は基板搬送時に基板保持治具9と
一緒に搬送するので、そのつど交換、洗浄ができるの
で、反応管1を取り外してカーボンサセプター等を洗浄
するような大掛かりなメンテナンスの頻度を少なくでき
るという別の効果も得られるものである。Next, FIG. 6 is a sectional view of a substrate holding portion showing a second embodiment of the vertical vapor phase growth apparatus of the present invention, which explains claim 3 of the present invention. The overall structure of the apparatus according to this embodiment is the same as that of the first embodiment shown in FIG. 1, but the difference from the first embodiment is that the substrate holding claw 12 has a flat shape without step portions, In addition, the insulating plate 24 is inserted between the carbon susceptor 7 and the back surface of the growth substrate 8. With this structure, when the substrate to be grown is placed on the substrate holding claws 12 of the detachable substrate holding jig 9 and the insulating plate 24 is placed on the substrate, the insulating plate 2 is removed.
The substrate to be grown 8 can be pressed by its own weight, and even when holding a substrate sufficiently smaller than the inner diameter of the substrate holding jig 9, it is not necessary to provide a stepped portion on the substrate holding claw 12 and the substrate to be grown can be grown during substrate transfer. It is possible to prevent the movement of the substrate,
The effect similar to that of the apparatus of the embodiment is obtained. Other,
The apparatus of this embodiment also has the effect of suppressing the deposition of polycrystal on the main surface of the carbon susceptor during crystal growth. The deposition of polycrystals on the carbon susceptor 7 deteriorates the contact state between the carbon susceptor 7 and the substrate 8 to be grown and increases the temperature distribution as the number of times of growth increases, which adversely affects reproducibility and uniformity. So maintenance is required. However, in the apparatus of this embodiment, the insulating plate 24 is inserted between the carbon susceptor 7 and the substrate 8 to be grown, and this insulating plate 24 is carried together with the substrate holding jig 9 at the time of carrying the substrate. Since replacement and cleaning can be performed, another effect that the frequency of large-scale maintenance such as cleaning the carbon susceptor by removing the reaction tube 1 can be reduced can be obtained.
【0046】ところで、第1、第2の実施例に示した縦
型気相成長装置ではまだ被誘導加熱体の自重が原因であ
るスリップライン等の欠陥、ウエハーの反り、ウエハー
の割れ等の発生が抑えられていない。そこで、次にこれ
を改善できる装置の実施例を示す。図7は本発明の縦型
気相成長装置の第3の実施例を示す断面図であり、本発
明の請求項6、請求項7、請求項10を説明するもので
ある。また、図8は図7中のC領域の拡大図であり、図
9は図7中のD方向から見た図である。これらの図で
は、本発明をより容易に理解できるように簡略化して示
している。図7〜9において、符号1は反応室に設置さ
れた反応管を示しており、反応管1は石英ガラスで作ら
れた二重管構造であり、下部に設けられた給水口2から
上部の排水口3に冷却水を流して反応管1を冷却する構
造となっている。反応管1内への原料ガス供給口4とキ
ャリアガス供給口5は反応管1の下部に設けられ、反応
管1からのガス排出口6は上部に設けられている。By the way, in the vertical type vapor phase growth apparatus shown in the first and second embodiments, defects such as slip lines due to the self-weight of the induction-heated body, wafer warpage, and wafer cracking still occur. Is not suppressed. Therefore, next, an embodiment of an apparatus capable of improving this will be shown. FIG. 7 is a cross-sectional view showing a third embodiment of the vertical vapor phase growth apparatus of the present invention, which explains Claims 6, 7, and 10 of the present invention. Further, FIG. 8 is an enlarged view of the area C in FIG. 7, and FIG. 9 is a view seen from the direction D in FIG. 7. In these figures, the present invention is shown in a simplified form for easier understanding. 7 to 9, reference numeral 1 indicates a reaction tube installed in the reaction chamber, and the reaction tube 1 has a double tube structure made of quartz glass, and has a water supply port 2 provided at the bottom and an upper part. The reaction tube 1 is cooled by flowing cooling water into the drainage port 3. The raw material gas supply port 4 and the carrier gas supply port 5 into the reaction tube 1 are provided in the lower part of the reaction tube 1, and the gas discharge port 6 from the reaction tube 1 is provided in the upper part.
【0047】反応管1内のガス供給口4及び5とガス排
出口6の間には、回転する支持棒10に保持され被成長
基板8を保持する基板保持治具9と、主となる第一の被
誘導加熱体である直径70mm、厚さ35mmのカーボ
ンサセプター7を配置している。カーボンサセプター7
は直径50mm、厚さ350μmである被成長基板8よ
りも片側1cm大きく、その上方にある支持棒10内に
挿通され支持棒10と一緒に回転するサセプター支持棒
14に対して長いカーボン固定ネジ15によって上下方
向に遊びを持って固定されている。すなわちこの例で
は、カーボンサセプター7はサセプター支持棒14に対
してカーボン固定ネジ15によって固定されているが、
カーボン固定ネジ15は長く、サセプター支持棒14の
下部にはネジの直径より大きくてネジの頭より小さな穴
があいており、サセプター支持棒14の重さがカーボン
サセプター7に加わらないような構造になっている。ま
た、カーボンサセプター7はサセプター支持棒14を図
示しないモーター等による移動機構により上下に動かす
ことにより、回転する支持棒10とは独立に上下方向に
移動可能である。Between the gas supply ports 4 and 5 and the gas discharge port 6 in the reaction tube 1, a substrate holding jig 9 which holds a substrate 8 to be grown and which is held by a rotating support rod 10, and a main first jig. A carbon susceptor 7 having a diameter of 70 mm and a thickness of 35 mm, which is one induction heated body, is arranged. Carbon susceptor 7
Is 1 cm larger on one side than the growth substrate 8 having a diameter of 50 mm and a thickness of 350 μm, and the carbon fixing screw 15 is longer than the susceptor support rod 14 which is inserted into the support rod 10 above and rotates with the support rod 10. It is fixed with play in the vertical direction. That is, in this example, the carbon susceptor 7 is fixed to the susceptor support rod 14 by the carbon fixing screw 15,
The carbon fixing screw 15 is long, and there is a hole in the lower portion of the susceptor support rod 14 that is larger than the diameter of the screw and smaller than the head of the screw. Has become. Further, the carbon susceptor 7 can be moved up and down independently of the rotating support rod 10 by moving the susceptor support rod 14 up and down by a moving mechanism such as a motor (not shown).
【0048】主面を下方に向けた被成長基板8は支持棒
10に保持された基板保持治具9により周辺部のみで保
持されている。尚、基板保持治具9は第1の被誘導加熱
体であるカーボンサセプター7がすっぽり入って若干余
裕があるように、カーボンサセプター7の外径より一回
り大きい内径を有する筒状の本体9aと、この本体下部
に設けられ、回転する支持棒10の軸方向に直角に突出
する複数個の基板保持爪12(この例では3つの基板保
持爪)を有しており、基板保持爪12の上面すなわち被
成長基板に8に接する方の面には被成長基板8の厚さよ
りも浅い約300μmの段部16が形成されていて、そ
の段部16に被成長基板8が保持されている。そして、
被成長基板8の裏面上には直に第2の被誘導加熱体であ
る厚さ3mm、直径70mmで円板状(ウエハー状)で
あって被成長基板8よりも片側1cm大きいカーボンウ
エハーが積載されている。また、基板保持治具9は支持
棒10に対して取り外し可能であり、別室で被成長基板
8とその裏面上に直にカーボンウエハー20を積載した
後に反応管1内に運ばれ支持棒10に保持される。この
際、基板保持治具9を支持棒10に設けた基板保持治具
受け部25で保持できるように、基板保持治具9の上部
には本体9aの外径よりも大きな保持用リング部26を
設けており、該保持用リング部26を上記基板保持治具
受け部25に掛合することにより、基板保持治具9が支
持棒10に保持される構造となっている。尚、この実施
例では基板保持爪12に段部16を設けているが、この
ような基板保持方法にするとカーボンウエハー20の自
重により被成長基板8が移動することなく搬送できるの
で、基板挿入時に再現性良くウエハーセットできれば、
基板保持爪12に上記段部を特に設けなくてもかまわな
い。The substrate 8 to be grown with its main surface facing downward is held only by the peripheral portion by the substrate holding jig 9 held by the supporting rod 10. The substrate holding jig 9 has a cylindrical main body 9a having an inner diameter slightly larger than the outer diameter of the carbon susceptor 7 so that the carbon susceptor 7 which is the first induction-heated body can be completely accommodated and there is some margin. The upper surface of the substrate holding claw 12 has a plurality of substrate holding claws 12 (three substrate holding claws in this example) provided on the lower portion of the main body and projecting at right angles to the axial direction of the rotating support rod 10. That is, a step portion 16 having a thickness of about 300 μm, which is shallower than the thickness of the growth substrate 8, is formed on the surface of the growth substrate 8 in contact with the growth substrate 8, and the growth substrate 8 is held by the step portion 16. And
Directly on the back surface of the growth substrate 8 is mounted a carbon wafer, which is a second induction-heated body and has a thickness of 3 mm and a diameter of 70 mm, which is disk-shaped (wafer-shaped) and is 1 cm larger on one side than the growth substrate 8. Has been done. The substrate holding jig 9 can be detached from the support rod 10, and the carbon wafer 20 is directly loaded on the growth substrate 8 and its back surface in a separate chamber and then carried into the reaction tube 1 to the support rod 10. Retained. At this time, in order that the substrate holding jig 9 can be held by the substrate holding jig receiving portion 25 provided on the support rod 10, the holding ring portion 26 having a larger diameter than the outer diameter of the main body 9a is provided above the substrate holding jig 9. The substrate holding jig 9 is held by the support rod 10 by engaging the holding ring portion 26 with the substrate holding jig receiving portion 25. In this embodiment, the step 16 is provided on the substrate holding claw 12. However, when such a substrate holding method is used, the growth substrate 8 can be transported without moving due to the weight of the carbon wafer 20, so that when the substrate is inserted. If you can set the wafer with good reproducibility,
The substrate holding claw 12 does not have to be provided with the step portion.
【0049】また、上記装置において、ウエハーセット
は通常N2 ボックス等、反応室とは別室の外気に直接触
れない所で行なわれるが、多孔質のカーボンには雰囲気
中の微量の酸素等が吸着し易く、そのため成長層の品質
を悪くする原因となる。そこでこの場合、カーボンウエ
ハー20の表面にはSiC膜等の不純物付着低減用のコ
ーティングをしておいた方がよい。また、カーボンサセ
プター7は反応管1を含む反応室から出さないようにし
て雰囲気中の微量の酸素等が吸着しないようにしてい
る。そして、上下方向に移動可能なカーボンサセプター
7が、モーター等による移動機構によりサセプター待機
部13から基板保持治具9の内側の下方に降りて、周辺
部のみで保持されている被成長基板8の裏面上に直に積
載されたカーボンウエハー20に接しない位置、例えば
数mm離して(間隙22を設けて)保持される。このよ
うな構成にすることで、カーボンサセプター7及びカー
ボンウエハー20に対する被成長基板8の位置を再現性
良く合わせることができる。また、カーボンウエハー2
0は被成長基板8の裏面上に直に積載されているので、
一部を強く押し付けすぎることもなく、複数個の基板保
持爪12には均一に力が加わり、カーボンウエハー2
0、被成長基板8、基板保持爪12の間は密着性が良く
しかも再現性良く均一に基板を保持できる。Further, in the above apparatus, the wafer set is usually carried out in a place separate from the reaction chamber, such as an N 2 box, which is not in direct contact with the outside air. This tends to cause deterioration of the quality of the growth layer. Therefore, in this case, it is preferable to coat the surface of the carbon wafer 20 with a coating such as a SiC film for reducing the adhesion of impurities. Further, the carbon susceptor 7 is prevented from coming out of the reaction chamber including the reaction tube 1 so that a trace amount of oxygen or the like in the atmosphere is not adsorbed. Then, the vertically movable carbon susceptor 7 descends from the susceptor standby portion 13 to the lower inside of the substrate holding jig 9 by a moving mechanism such as a motor, and the growth substrate 8 held only in the peripheral portion The carbon wafer 20 directly held on the back surface is held at a position not in contact with the carbon wafer 20, for example, several mm apart (with a gap 22 provided). With such a configuration, the positions of the growth substrate 8 with respect to the carbon susceptor 7 and the carbon wafer 20 can be aligned with good reproducibility. Also, carbon wafer 2
Since 0 is directly stacked on the back surface of the substrate 8 to be grown,
Even if a part of the carbon wafer 2 is not pressed too strongly, a force is evenly applied to the plurality of substrate holding claws 12.
0, the substrate 8 to be grown, and the substrate holding claw 12 have good adhesion and can hold the substrate uniformly with good reproducibility.
【0050】さて、図7〜9に示す縦型気相成長装置お
いては、原料ガス供給口4から供給されたガスは被成長
基板8の主面に吹き付けられガス排出口6へと向かう。
つまり、反応管1内の下部から上部へと向かうガスの流
れに対して直角に被成長基板8を配置している。そし
て、反応管1の周囲に設けられた高周波加熱コイル11
によって高周波電界を印加することによりカーボンサセ
プター7及びカーボンウエハー20の発熱が生じ被成長
基板8が加熱され、被成長基板8の表面に達した原料ガ
スの分解と被成長基板8表面での表面反応により結晶成
長するものである。尚、我々の実験では、薄いカーボン
ウエハー20のみでは結晶成長するのに適した温度、例
えばAlGaAs系の材料ならば700〜850℃まで
昇温することができなかったが、本実施例のようにカー
ボンサセプター7及びカーボンウエハー20を用いた構
成にすると加熱可能であった。勿論、カーボンサセプタ
ー7からの輻射熱が主となっているものではない。この
カーボンサセプター7の位置はカーボンサセプター7に
充分加熱可能な位置ならかまわない。In the vertical vapor phase growth apparatus shown in FIGS. 7 to 9, the gas supplied from the source gas supply port 4 is blown to the main surface of the substrate 8 to be grown and heads to the gas discharge port 6.
That is, the growth substrate 8 is arranged at right angles to the gas flow from the lower part to the upper part in the reaction tube 1. Then, the high frequency heating coil 11 provided around the reaction tube 1
By applying a high-frequency electric field by the above, heat is generated in the carbon susceptor 7 and the carbon wafer 20 to heat the growth substrate 8, the decomposition of the source gas reaching the surface of the growth substrate 8 and the surface reaction on the surface of the growth substrate 8 are caused. The crystal is grown by. In our experiment, it was not possible to raise the temperature suitable for crystal growth with only the thin carbon wafer 20, for example, 700 to 850 ° C. for AlGaAs type materials, but as in this example. When the carbon susceptor 7 and the carbon wafer 20 were used, heating was possible. Of course, the radiant heat from the carbon susceptor 7 is not the main one. The position of the carbon susceptor 7 may be a position where the carbon susceptor 7 can be sufficiently heated.
【0051】このような構造の縦型気相成長装置におい
ては、ガス供給口4及び5からのガスの流れ方向とカー
ボンサセプター7及びカーボンウエハー20等の熱によ
り加熱され浮力を持ったガスの流れ方向が一致するため
に、成長に寄与しなかった不用なガスは原料ガスと混合
しにくく、原料ガスの昇温による組成変化等が防止さ
れ、高品質な結晶ができる。尚、図中の細い矢印はガス
の流れの概略を示している。また、カーボンウエハー2
0の底面の面積を被成長基板8よりも大きくしているの
で被成長基板8上での流速はほぼ等しく、流速が速くな
る領域はカーボンウエハー20のエッジ部分に移動し、
被成長基板8上での供給される原料ガスは面内でほぼ等
しくなるので、被成長基板8のエッジ部分での成長速度
が大きくなることはなく、ウエハー周辺部の成長層の厚
さむら等が改善され、ウエハー面内の均一性に優れた気
相成長層が得られる。このエッジ部分の盛り上がりは原
料ガス供給量とキャリアガス供給量の比を変えても、他
のパラメータを変えても中心付近が均一になるような条
件を選んだ場合、カーボンウエハー20と被成長基板8
の大きさが同様な場合には周囲約1cm生じていたが、
カーボンウエハー20の底面の面積を被成長基板8より
も大きくすることで改善できた。このようなわけで、カ
ーボンウエハー20は基板よりも片側1cm以上大きく
することが望ましい。In the vertical type vapor phase growth apparatus having such a structure, the flow direction of the gas from the gas supply ports 4 and 5 and the flow of the gas having buoyancy which is heated by the heat of the carbon susceptor 7 and the carbon wafer 20. Since the directions are coincident with each other, the unnecessary gas that has not contributed to the growth hardly mixes with the raw material gas, the composition change due to the temperature rise of the raw material gas is prevented, and a high quality crystal can be formed. The thin arrows in the figure show the outline of the gas flow. Also, carbon wafer 2
Since the area of the bottom surface of 0 is made larger than that of the growth substrate 8, the flow velocity on the growth substrate 8 is almost equal, and the region where the flow velocity becomes faster moves to the edge portion of the carbon wafer 20,
Since the supplied source gases on the growth substrate 8 are almost equal in the plane, the growth rate at the edge portion of the growth substrate 8 does not increase, and the unevenness of the thickness of the growth layer around the wafer is not caused. Is improved, and a vapor phase growth layer having excellent uniformity within the wafer surface can be obtained. When the condition that the vicinity of the center is uniform is selected even if the ratio of the supply amount of the source gas to the supply amount of the carrier gas is changed or other parameters are changed, the swelling of the edge portion is selected. 8
If the size is the same, the circumference was about 1 cm, but
This can be improved by making the area of the bottom surface of the carbon wafer 20 larger than that of the growth substrate 8. For this reason, it is desirable that the carbon wafer 20 be larger than the substrate by 1 cm or more on each side.
【0052】また、本実施例の縦型気相成長装置では、
被誘導加熱体の温度分布が原因である被成長基板8の周
辺部と中心部の温度差は小さくなり被成長基板の熱歪が
抑えられたので、この原因によるスリップライン等の欠
陥の発生も抑えられ、また、被成長基板の温度分布が均
一化されるので、温度分布が原因である膜特性の分布も
改善され、さらに均一で良質の結晶成長層を得ることが
できるのである。さらに、被誘導加熱体である薄いカー
ボンウエハー20のみが被成長基板8上に乗っているの
で、被成長基板8に加わる力を低減することができ、ス
リップライン等の欠陥、ウエハの反りが低減し、良質な
エピタキシャル成長層を得ることができるので、デバイ
スを作製したときの歩留まり等が向上する。尚、この効
果は、カーボンウエハー20の大きさが被成長基板8の
大きさと同じ場合でも効果があるのは明らかである。ま
た、第1の被誘導加熱体であるカーボンサセプター7は
反応室内にあり、基板と一緒に搬送される第2の被誘導
加熱体であるカーボンウエハー20は薄いので、洗浄も
容易で吸着した不純物ガスも容易に脱ガスできるので酸
素等の吸着による反応室の汚染が低減され成長層の品質
低下を防ぐことができる。Further, in the vertical vapor phase growth apparatus of this embodiment,
Since the temperature difference between the peripheral portion and the central portion of the growth substrate 8 due to the temperature distribution of the induction-heated body is reduced and the thermal strain of the growth substrate is suppressed, the occurrence of defects such as slip lines is also caused by this. Further, since the temperature distribution of the substrate to be grown is suppressed and the temperature distribution of the substrate to be grown is made uniform, the distribution of film characteristics caused by the temperature distribution is also improved, and a more uniform and high quality crystal growth layer can be obtained. Further, since only the thin carbon wafer 20 which is the object to be heated is placed on the growth substrate 8, it is possible to reduce the force applied to the growth substrate 8 and reduce defects such as slip lines and warp of the wafer. However, since a good quality epitaxial growth layer can be obtained, the yield and the like when the device is manufactured is improved. It is obvious that this effect is effective even when the size of the carbon wafer 20 is the same as the size of the growth substrate 8. Further, since the carbon susceptor 7 which is the first induction-heated object is in the reaction chamber and the carbon wafer 20 which is the second induction-heated object which is transported together with the substrate is thin, it is easy to clean and the adsorbed impurities are absorbed. Since the gas can be easily degassed, the contamination of the reaction chamber due to the adsorption of oxygen or the like can be reduced and the deterioration of the quality of the growth layer can be prevented.
【0053】次に、図10は本発明の縦型気相成長装置
の第4の実施例を示す基板保持部の断面図であり、本発
明の請求項8を説明するものである。本実施例の全体構
成は図7に示した第3の実施例とほぼ同様であるが、第
3の実施例と違うところは、カーボンウエハー20が第
2のカーボン固定ネジ23によってカーボンサセプター
7に対して遊びを持って保持される構造となっているこ
とである。カーボン固定ネジ23は長く、カーボンサセ
プター7にはネジの直径より大きくてネジの頭より小さ
な穴があいており、カーボンサセプター7の重さが被成
長基板8に加わらない機能を持っている。さらに、カー
ボンサセプター7を上に移動した時に、カーボンサセプ
ター7の上面にカーボン固定ネジ23の頭がひっかかる
ためカーボンウエハー20を上に移動することができ
る。つまり、カーボンサセプター7とカーボンウエハー
20を一体化しているので、基板搬送時にカーボンウエ
ハー20を基板保持治具9と一緒に搬送する必要がな
く、カーボンサセプター7と一緒に反応室に残しておく
ことが可能となるので、別室(基板挿入室)の雰囲気中
の酸素等による反応室の汚染が更に低減され、更に高品
質のエピタキシャル成長層を得ることができる。Next, FIG. 10 is a sectional view of a substrate holding part showing a fourth embodiment of the vertical vapor phase growth apparatus of the present invention, which explains claim 8 of the present invention. The overall structure of this embodiment is almost the same as that of the third embodiment shown in FIG. 7, except that the carbon wafer 20 is attached to the carbon susceptor 7 by the second carbon fixing screw 23. In contrast, the structure is such that it is held with play. The carbon fixing screw 23 is long, the carbon susceptor 7 has a hole larger than the diameter of the screw and smaller than the head of the screw, and has a function of preventing the weight of the carbon susceptor 7 from being applied to the growth substrate 8. Further, when the carbon susceptor 7 is moved upward, the head of the carbon fixing screw 23 is caught on the upper surface of the carbon susceptor 7, so that the carbon wafer 20 can be moved upward. That is, since the carbon susceptor 7 and the carbon wafer 20 are integrated, it is not necessary to transfer the carbon wafer 20 together with the substrate holding jig 9 during the transfer of the substrate, and the carbon susceptor 7 and the carbon susceptor 7 should be left in the reaction chamber. Therefore, contamination of the reaction chamber due to oxygen or the like in the atmosphere of the separate chamber (substrate insertion chamber) can be further reduced, and a higher quality epitaxial growth layer can be obtained.
【0054】また、図示しないが、本発明の請求項9に
示すように、図10のカーボンウエハー20と被成長基
板8の裏面の間に図6の第2の実施例の装置のように絶
縁板24を挿入することができ、絶縁板24を挿入する
ことで、基板保持爪12に段部が無い場合でも、上記効
果を有したまま、絶縁板24の自重により被成長基板8
を押さえることができ、基板保持治具9の内径よりも充
分小さい基板を保持する場合でも基板保持爪12に段部
を設ける必要がなく、基板搬送時の被成長基板の移動を
防止することができる。尚、この場合、基板に加わる力
を低減する必要があるので絶縁板24は薄いことが望ま
しい。また、絶縁板24を用いると、結晶成長時にカー
ボンウエハー20上への多結晶の堆積が抑えられる。す
なわち、カーボンウエハー20上への多結晶の堆積は成
長回数を重ねるとカーボンウエハー20と被成長基板8
との接触状態を悪くして温度分布を大きくし再現性、均
一性などに悪影響を及ぼす原因になるのでメンテナンス
が必要であるが、絶縁板をカーボンウエハー20と被成
長基板8との間に挿入しておくことにより堆積物は主と
して絶縁板に付着しカーボンウエハー20上への多結晶
の堆積が抑えられ、しかも、この絶縁板は基板搬送時に
基板保持治具9と一緒に搬送するので、そのつど交換、
洗浄ができるので、反応管1を取り外してカーボンサセ
プター7やカーボンウエハー20等を洗浄するような大
掛かりなメンテナンスの頻度を少なくできる効果も得ら
れる。Although not shown, as shown in claim 9 of the present invention, insulation is provided between the carbon wafer 20 of FIG. 10 and the rear surface of the substrate 8 to be grown as in the apparatus of the second embodiment of FIG. The plate 24 can be inserted, and by inserting the insulating plate 24, even if the substrate holding claw 12 does not have a step portion, the growth substrate 8 is grown by the weight of the insulating plate 24 while maintaining the above effect.
It is possible to prevent the movement of the substrate to be grown during the transfer of the substrate, since it is not necessary to provide a step on the substrate holding claw 12 even when holding the substrate sufficiently smaller than the inner diameter of the substrate holding jig 9. it can. In this case, since it is necessary to reduce the force applied to the substrate, it is desirable that the insulating plate 24 be thin. Further, when the insulating plate 24 is used, the deposition of polycrystal on the carbon wafer 20 during crystal growth can be suppressed. That is, the deposition of polycrystal on the carbon wafer 20 and the substrate 8 to be grown 8 will increase as the number of times of growth increases.
It is necessary to perform maintenance because it deteriorates the contact state with and increases the temperature distribution, which adversely affects reproducibility and uniformity, but an insulating plate is inserted between the carbon wafer 20 and the growth substrate 8. By doing so, the deposit mainly adheres to the insulating plate and the deposition of polycrystals on the carbon wafer 20 is suppressed, and this insulating plate is carried together with the substrate holding jig 9 at the time of carrying the substrate. Every time exchange,
Since the cleaning can be performed, the effect of reducing the frequency of large-scale maintenance such as removing the reaction tube 1 and cleaning the carbon susceptor 7, the carbon wafer 20 and the like can be obtained.
【0055】次に、図11は本発明の縦型気相成長装置
の第5の実施例を示す断面図であり、本発明の請求項1
1を説明するものである。また、図12は図11中のE
領域の拡大図であり、図13は図11中のF方向から見
た図である。これらの図では、本発明をより容易に理解
できるように簡略化して示している。本実施例は被誘導
加熱体の自重が原因であるスリップライン等の欠陥、ウ
エハの反り、ウエハの割れ等の発生を抑えることもでき
る実施例である。図11〜13において、符号1は反応
室に設置された反応管を示しており、反応管1は石英ガ
ラスで作られた二重管構造であり、下部に設けられた給
水口2から上部の排水口3に冷却水を流して反応管1を
冷却する構造となっている。反応管1内への原料ガス供
給口4とキャリアガス供給口5は反応管1の下部に設け
られ、反応管1からのガス排出口6は上部に設けられて
いる。Next, FIG. 11 is a sectional view showing a fifth embodiment of the vertical vapor phase growth apparatus of the present invention. Claim 1 of the present invention
1 will be described. Further, FIG. 12 shows E in FIG.
FIG. 13 is an enlarged view of the region, and FIG. 13 is a view seen from the F direction in FIG. 11. In these figures, the present invention is shown in a simplified form for easier understanding. In this embodiment, it is possible to suppress the occurrence of defects such as slip lines, warp of the wafer, and cracking of the wafer due to the self-weight of the induction-heated body. 11 to 13, reference numeral 1 denotes a reaction tube installed in the reaction chamber, and the reaction tube 1 has a double-tube structure made of quartz glass, and has a water supply port 2 provided at the bottom and an upper part. The reaction tube 1 is cooled by flowing cooling water into the drainage port 3. The raw material gas supply port 4 and the carrier gas supply port 5 into the reaction tube 1 are provided in the lower part of the reaction tube 1, and the gas discharge port 6 from the reaction tube 1 is provided in the upper part.
【0056】反応管1内のガス供給口4及び5とガス排
出口6の間には、主となる第一の被誘導加熱体であるカ
ーボンサセプター7を配置している。カーボンサセプタ
ー7は被成長基板8よりも片側1cm大きく、その上方
にある支持棒10内に挿通され支持棒10と一緒に回転
するサセプター支持棒14に対して長いカーボン固定ネ
ジ15によって上下方向に遊びを持って固定されてい
る。すなわちこの例では、カーボンサセプター7はサセ
プター支持棒14に対してカーボン固定ネジ15によっ
て固定されているが、カーボン固定ネジ15は長く、サ
セプター支持棒14の下部にはネジの直径より大きくて
ネジの頭より小さな穴があいており、サセプター支持棒
14の重さがカーボンサセプター7に加わらないような
構造になっている。また、カーボンサセプター7はサセ
プター支持棒14を図示しないモーター等による移動機
構により上下に動かすことにより、回転する支持棒10
とは独立に上下方向に移動可能である。そして、厚さ3
50μm、直径50mmである被成長基板8よりも片側
1cm大きい第2の被誘導加熱体である厚さ3mm、直
径70mmで円板状(ウエハー状)のカーボンウエハー
20が支持棒10に保持された第1の基板保持治具9に
より周辺部のみで保持されている。Between the gas supply ports 4 and 5 and the gas discharge port 6 in the reaction tube 1, a carbon susceptor 7 serving as a main first induction-heated body is arranged. The carbon susceptor 7 is larger than the substrate 8 to be grown by 1 cm on one side, and is vertically inserted by a long carbon fixing screw 15 with respect to the susceptor supporting rod 14 which is inserted into the supporting rod 10 above and rotates together with the supporting rod 10. Has been fixed. That is, in this example, the carbon susceptor 7 is fixed to the susceptor support rod 14 by the carbon fixing screw 15. However, the carbon fixing screw 15 is long, and the lower portion of the susceptor support rod 14 has a diameter larger than that of the screw. There is a hole smaller than the head, so that the weight of the susceptor support rod 14 is not added to the carbon susceptor 7. Further, the carbon susceptor 7 is rotated by moving the susceptor support rod 14 up and down by a moving mechanism such as a motor (not shown).
It can move up and down independently of. And thickness 3
A disk-shaped (wafer-shaped) carbon wafer 20 having a thickness of 3 mm and a diameter of 70 mm, which is a second induction-heated body 1 cm larger on one side than the growth substrate 8 having a diameter of 50 μm and a diameter of 50 mm, was held by the support rod 10. The first substrate holding jig 9 holds only the peripheral portion.
【0057】尚、第1の基板保持治具9は回転する支持
棒10の軸方向に直角に突出した複数個の基板保持爪1
2を有しており、該基板保持爪12にカーボンウエハー
20が保持されている。また、被成長基板8はカーボン
ウエハー20の下面に主面を下にして第2の基板保持治
具21であるカーボン製の板21aとネジ21bで保持
されている。また、第1の基板保持治具9は本体上部に
設けられた本体より外径の大きい保持用リング部26を
有しており、該保持用リング部26を支持棒10の基板
保持治具受け部25に掛合することにより支持棒10に
保持されるようになっており、着脱可能である。従っ
て、第1の基板保持治具9は支持棒10から取り外し可
能で、別室で被成長基板8が第2の基板保持治具21に
より保持された第2の被誘導加熱体である厚さ3mmの
カーボンウエハー20を第1の基板保持治具9にセット
した後に、反応管1を含む外気が直接入り込まない反応
室内に反応室の横方向から運ばれ支持棒10に保持され
る。The first substrate holding jig 9 is composed of a plurality of substrate holding claws 1 projecting at right angles to the axial direction of the rotating support rod 10.
2 and the carbon wafer 20 is held by the substrate holding claw 12. Further, the growth substrate 8 is held on the lower surface of the carbon wafer 20 with the main surface facing downward by a carbon plate 21a, which is a second substrate holding jig 21, and a screw 21b. Further, the first substrate holding jig 9 has a holding ring portion 26 provided on the upper portion of the main body and having an outer diameter larger than that of the main body, and the holding ring portion 26 receives the substrate holding jig of the support rod 10. It is adapted to be held by the support rod 10 by being engaged with the portion 25, and is detachable. Therefore, the first substrate holding jig 9 can be detached from the support rod 10, and the growth substrate 8 is a second induction heated body held by the second substrate holding jig 21 in a separate chamber and has a thickness of 3 mm. After the carbon wafer 20 is set on the first substrate holding jig 9, it is carried from the lateral direction of the reaction chamber into the reaction chamber containing the reaction tube 1 where the outside air does not directly enter and is held by the support rod 10.
【0058】また、上記装置おいて、ウエハーセットは
通常N2 ボックス等、反応室とは別室の外気に直接触れ
ない所で行なわれるが、多孔質のカーボンには雰囲気中
の微量の酸素等が吸着し易く、そのため成長層の品質を
悪くする原因となる。そこでこの場合、カーボンウエハ
ー20の表面にはSiC膜等の不純物付着低減用のコー
ティングをしておいた方がよい。また、カーボンサセプ
ター7は反応管1を含む反応室から出さないようにして
雰囲気中の微量の酸素等が吸着しないようにしている。
そして、支持棒10に対して独立に上下方向に移動可能
なカーボンサセプター7が、モーター等による移動機構
によりサセプター待機部13から基板保持治具9の内側
の下方に降りて、基板保持爪12により周辺部のみで保
持されているカーボンウエハー20の裏面上に直に積載
されている。このような構成にすることで、カーボンサ
セプター7及びカーボンウエハー20に対する被成長基
板8の位置を再現性良く合わせることができる。また、
被成長基板8は第2の基板保持治具21であるカーボン
製の板21aとネジ21bで固定されているので、強く
締めないように均一に締めることで密着性が良くしかも
均一に基板を保持できる。このため第3及び第4の実施
例と同様に基板に加わる力を低減でき、スリップライン
等の欠陥を低減できる。またこの場合、第2の基板保持
治具21用の穴の位置を適当に設けておくと本実施例の
ような円形のウエハー以外の不定形のウエハーをも用い
ることが可能となる効果も付加される。In the above apparatus, the wafer set is usually carried out in a place separate from the reaction chamber, such as an N 2 box, which is not in direct contact with the outside air. However, the porous carbon contains a small amount of oxygen in the atmosphere. It is easily adsorbed, which causes deterioration of the quality of the growth layer. Therefore, in this case, it is preferable to coat the surface of the carbon wafer 20 with a coating such as a SiC film for reducing the adhesion of impurities. Further, the carbon susceptor 7 is prevented from coming out of the reaction chamber including the reaction tube 1 so that a trace amount of oxygen or the like in the atmosphere is not adsorbed.
Then, the carbon susceptor 7 that can move vertically independently of the support rod 10 descends from the susceptor standby portion 13 to the lower inside of the substrate holding jig 9 by the moving mechanism such as a motor, and The carbon wafer 20 is directly stacked on the back surface of the carbon wafer 20, which is held only at the peripheral portion. With such a configuration, the positions of the growth substrate 8 with respect to the carbon susceptor 7 and the carbon wafer 20 can be aligned with good reproducibility. Also,
Since the substrate 8 to be grown is fixed by the carbon plate 21a, which is the second substrate holding jig 21, and the screw 21b, by tightly tightening it without being strongly tightened, the adhesion is good and the substrate is held uniformly. it can. Therefore, as in the third and fourth embodiments, the force applied to the substrate can be reduced and defects such as slip lines can be reduced. Further, in this case, if the positions of the holes for the second substrate holding jig 21 are appropriately provided, it is possible to use an amorphous wafer other than the circular wafer as in this embodiment. To be done.
【0059】さて、図11〜13に示す縦型気相成長装
置おいては、原料ガス供給口4から供給されたガスは被
成長基板8の主面に吹き付けられガス排出口6へと向か
う。つまり、反応管1内の下部から上部へと向かうガス
の流れに対して直角に被成長基板8を配置している。そ
して、反応管1の周囲に設けられた高周波加熱コイル1
1によって高周波電界を印加することによりカーボンサ
セプター7及びカーボンウエハー20の発熱が生じ被成
長基板8が加熱され、被成長基板8の表面に達した原料
ガスの分解と被成長基板8表面での表面反応により結晶
成長するものである。In the vertical type vapor phase growth apparatus shown in FIGS. 11 to 13, the gas supplied from the source gas supply port 4 is blown to the main surface of the substrate 8 to be grown and goes to the gas discharge port 6. That is, the growth substrate 8 is arranged at right angles to the gas flow from the lower part to the upper part in the reaction tube 1. Then, the high-frequency heating coil 1 provided around the reaction tube 1
When the high frequency electric field is applied by 1, heat is generated in the carbon susceptor 7 and the carbon wafer 20 to heat the growth substrate 8, the decomposition of the source gas reaching the surface of the growth substrate 8 and the surface on the growth substrate 8 surface Crystals grow by the reaction.
【0060】このような構造の縦型気相成長装置におい
ては、ガス供給口4及び5からのガスの流れ方向とカー
ボンサセプター7及びカーボンウエハー20等の熱によ
り加熱され浮力を持ったガスの流れ方向が一致するため
に、成長に寄与しなかった不用なガスは原料ガスと混合
しにくく、成長ガスの昇温による組成変化等が防止さ
れ、高品質な結晶ができる。また、カーボンウエハー2
0の底面の面積を被成長基板8よりも大きくしているの
で被成長基板8上での流速はほぼ等しく、流速が速くな
る領域はカーボンウエハー20のエッジ部分に移動し、
被成長基板8上での供給される原料ガスは面内でほぼ等
しくなるので、被成長基板8のエッジ部分での成長速度
が大きくなることはなく、ウエハー周辺部の成長層の厚
さむら等が改善され、ウエハー面内の均一性に優れた気
相成長層が得られる。このエッジ部分の盛り上がりは原
料ガス供給量とキャリアガス供給量の比を変えても、他
のパラメータを変えても中心付近が均一になるような条
件を選んだ場合、カーボンウエハー20と被成長基板8
の大きさが同様な場合には周囲約1cm生じていたが、
カーボンウエハー20の底面の面積を被成長基板8より
も大きくすることで改善できた。このようなわけで、カ
ーボンウエハー20は基板よりも片側1cm以上大きく
することが望ましい。In the vertical type vapor phase growth apparatus having such a structure, the flow direction of the gas from the gas supply ports 4 and 5 and the flow of the gas having buoyancy which is heated by the heat of the carbon susceptor 7 and the carbon wafer 20. Since the directions coincide with each other, the unnecessary gas that has not contributed to the growth hardly mixes with the raw material gas, the composition change due to the temperature rise of the growth gas is prevented, and a high quality crystal can be formed. Also, carbon wafer 2
Since the area of the bottom surface of 0 is made larger than that of the growth substrate 8, the flow velocity on the growth substrate 8 is almost equal, and the region where the flow velocity becomes faster moves to the edge portion of the carbon wafer 20,
Since the supplied source gases on the growth substrate 8 are almost equal in the plane, the growth rate at the edge portion of the growth substrate 8 does not increase, and the unevenness of the thickness of the growth layer around the wafer is not caused. Is improved, and a vapor phase growth layer having excellent uniformity within the wafer surface can be obtained. When the condition that the vicinity of the center is uniform is selected even if the ratio of the supply amount of the source gas to the supply amount of the carrier gas is changed or other parameters are changed, the swelling of the edge portion is selected. 8
If the size is the same, the circumference was about 1 cm, but
This can be improved by making the area of the bottom surface of the carbon wafer 20 larger than that of the growth substrate 8. For this reason, it is desirable that the carbon wafer 20 be larger than the substrate by 1 cm or more on each side.
【0061】また、本実施例の縦型気相成長装置では、
被誘導加熱体の温度分布が原因である被成長基板8の周
辺部と中心部の温度差は小さくなり被成長基板の熱歪が
抑えられるので、この原因によるスリップライン等の欠
陥の発生が抑えられ、また、被成長基板の温度分布が均
一化されるので、温度分布が原因である膜特性の分布も
改善され、さらに均一で良質の結晶成長層を得ることが
できるのである。また、被成長基板8は第2の基板保持
治具21であるカーボン製の板21aとネジ21bで固
定されているので、被成長基板に加わる力は被誘導加熱
体であるカーボンウエハー20及びカーボンサセプター
7の重さに左右されず被成長基板に加わる力を低減する
ことができ、スリップライン等の欠陥、ウエハーの反り
等が低減し、良質なエピタキシャル成長層を得ることが
できる。この場合、第2の基板保持治具21は被誘導加
熱体等の重さが被成長基板に加わらない構造で保持でき
れば良く、カーボン製の板とネジでなくてもかまわな
い。また、カーボンサセプター7はカーボンウエハー2
0に接していなくても良く、カーボンウエハー20が充
分加熱される程度なら離れていてもよい。また、第2の
基板保持治具21は、カーボンウエハー20と同様にS
iC等のガスの吸着低減用の膜がコーティングされてい
る方がよい。Further, in the vertical vapor phase growth apparatus of this embodiment,
Since the temperature difference between the peripheral part and the central part of the growth substrate 8 due to the temperature distribution of the induction-heated body is reduced and the thermal distortion of the growth substrate is suppressed, the occurrence of defects such as slip lines due to this cause is suppressed. In addition, since the temperature distribution of the substrate to be grown is made uniform, the distribution of film characteristics due to the temperature distribution is also improved, and a more uniform and good quality crystal growth layer can be obtained. Further, since the growth substrate 8 is fixed by the carbon plate 21a which is the second substrate holding jig 21 and the screw 21b, the force applied to the growth substrate is the carbon wafer 20 and the carbon which are induction heated bodies. The force applied to the substrate to be grown can be reduced without being affected by the weight of the susceptor 7, defects such as slip lines and warpage of the wafer can be reduced, and a high-quality epitaxial growth layer can be obtained. In this case, the second substrate holding jig 21 need only be held by a structure in which the weight of the induction-heated body or the like is not applied to the growth substrate, and need not be a carbon plate and screws. Further, the carbon susceptor 7 is a carbon wafer 2.
The carbon wafer 20 may not be in contact with 0, and may be separated from each other as long as the carbon wafer 20 is sufficiently heated. In addition, the second substrate holding jig 21 is similar to the carbon wafer 20 in S
It is better to coat a film for reducing adsorption of gas such as iC.
【0062】尚、以上の実施例においては、本発明に係
わる縦型気相成長装置をGaAs基板を用いた例につい
て説明したが、GaAs基板以外の化合物半導体及び、
IV族半導体基板を用いた熱分解し易い原料ガスを用い
た気相成長においても効果的に適用することができる。In the above embodiments, the vertical vapor phase growth apparatus according to the present invention was described using the GaAs substrate. However, compound semiconductors other than the GaAs substrate and
It can also be effectively applied to vapor phase growth using a source gas that is easily decomposed by heat using a Group IV semiconductor substrate.
【0063】[0063]
【発明の効果】以上説明したように、請求項1の縦型気
相成長装置では、反応ガスを下部から導入して上部に排
出する縦型反応管と、主面を下方に向けた被成長基板の
裏面上に積載された被誘導加熱体とを有して高周波誘導
加熱方式を用いて結晶成長を行なう縦型気相成長装置に
おいて、基板保持治具は、被成長基板の搬送には別室で
被成長基板を基板保持治具に保持してから反応室に移動
し、支持棒に設けられた基板保持治具受け部に保持でき
るように、被誘導加熱体が入ることが可能な筒状の本体
と、該本体の下部に設けられ前記回転する支持棒の軸方
向に直角に突出して主面を下方に向けた被成長基板の周
辺部を保持する複数個の平坦なまたは断部を有する基板
保持爪と、本体上部に設けられ前記支持棒の基板保持治
具受け部と係合される本体の外径よりも大きな保持用リ
ング部とを有し、前記支持棒に対して着脱可能であるの
で、被成長基板搬送時に、別室で主面を下方に向けた被
成長基板を基板保持治具の段部を有する基板保持爪に保
持してから反応室に移動し、支持棒に設けた基板保持治
具受け部に保持用リング部を保持することで、筒状の本
体の内径よりも充分小さい被成長基板においても移動し
ないように再現性良く基板搬送できる。尚、本体の内径
と同程度の大きさの被成長基板を用いた場合は段部が無
く平坦な基板保持爪でも移動しないように再現性良く基
板搬送できる。このように本発明では、ウエハーの大き
さによらず位置精度を高くしつつ基板搬送するための治
具を提供することができる。また、被成長基板の下流側
は多結晶等が堆積する。特に被誘導加熱体の近くは多い
が、その領域に着脱可能な上記基板保持治具を用いる
と、交換して王水等で洗浄できるので、被誘導加熱体
等、反応室内の汚れを低減でき、反応管を取り外すよう
な大掛かりなメンテナンスの頻度を少なくできる。ま
た、被誘導加熱体の汚れが低減されることから、被誘導
加熱体を洗浄する回数が減り、洗浄後の脱ガス工程を少
なくできる効果もある。As described above, according to the vertical vapor phase growth apparatus of the first aspect, the vertical reaction tube for introducing the reaction gas from the lower part and discharging it to the upper part, and the growth surface with the main surface facing downward. In a vertical vapor phase growth apparatus that has an object to be heated on the back surface of a substrate and performs crystal growth using a high frequency induction heating method, a substrate holding jig is provided in a separate chamber for transporting the substrate to be grown. A cylindrical shape into which an induction-heated body can be inserted so that the substrate to be grown can be held in a substrate holding jig and then moved to the reaction chamber and held in a substrate holding jig receiving portion provided on a support rod. Body, and a plurality of flat or cut portions that are provided in the lower part of the body and project at right angles to the axial direction of the rotating support rod and hold the peripheral portion of the growth substrate with the main surface facing downward. The board holding claw is engaged with the board holding jig receiving part of the support bar provided on the upper part of the main body. Since it has a holding ring part larger than the outer diameter of the main body and can be attached to and detached from the support rod, the substrate to be grown can be held in a separate chamber when the substrate is to be transferred. By holding it on the substrate holding claw that has the stepped part of the jig and then moving it to the reaction chamber and holding the holding ring part on the substrate holding jig receiving part provided on the support rod, The substrate can be transported with good reproducibility so that it does not move even on a sufficiently small substrate to be grown. When a substrate to be grown having a size about the same as the inner diameter of the main body is used, the substrate can be conveyed with good reproducibility so that even a flat substrate holding claw without a step does not move. As described above, according to the present invention, it is possible to provide a jig for transferring a substrate while increasing the positional accuracy regardless of the size of the wafer. In addition, polycrystal or the like is deposited on the downstream side of the growth substrate. In particular, although there are many parts near the induction-heated body, the substrate holding jig that can be attached and detached in that area can be exchanged and washed with aqua regia, etc., so that dirt inside the reaction chamber such as the induction-heated body can be reduced. The frequency of large-scale maintenance such as removing the reaction tube can be reduced. Further, since the contamination of the induction-heated body is reduced, the number of times of cleaning the induction-heated body is reduced, and the degassing step after cleaning can be reduced.
【0064】請求項2の縦型気相成長装置では、反応室
内に設置され、反応ガスを下部から導入して上部に排出
する縦型反応管と、反応管内に挿入され反応管内で回転
する支持棒と、主面を下方に向けた被成長基板をその周
辺部のみで保持し該被成長基板の裏面の上方に位置する
前記支持棒に保持された基板保持治具と、被成長基板の
裏面上に直に積載された被誘導加熱体とを有し、高周波
誘導加熱方式を用いて結晶成長を行なう縦型気相成長装
置において、前記被誘導加熱体の底面の面積を前記被成
長基板よりも大きくし、また、前記基板保持治具は、回
転する支持棒の軸方向に直角に複数個の基板保持爪を有
しており、該基板保持爪の上面すなわち被成長基板に接
する方の面には被成長基板の厚さよりも浅い段部が形成
されていて、その段部に被成長基板が保持される構造を
有しているので、段部を有する基板保持爪によりウエハ
ーの大きさによらずウエハー挿入時の位置精度を高くし
てウエハーを保持することができる。また、被誘導加熱
体の底面の面積を被成長基板よりも大きくしているので
エッジ効果が低減され、ウエハー周辺部の気相成長層の
厚さむら等が改善でき、ウエハー面内の膜厚の均一性に
優れた気相成長層を得ることができる。また、被誘導加
熱体の温度分布が原因である被成長基板の周辺部と中心
部の温度差は小さくなり被成長基板の熱歪が抑えられる
ので、この原因によるスリップライン等の欠陥の発生が
抑えられる。更にウエハー面内の温度分布が均一化され
るので温度分布が原因であった膜特性の分布も改善さ
れ、さらに均一で良質の結晶成長層を得ることができ
る。なおこれは、支持棒と基板保持治具が一体化されて
いても効果がある。In the vertical vapor phase growth apparatus of claim 2, a vertical reaction tube installed in the reaction chamber for introducing the reaction gas from the lower part and discharging it to the upper part, and a support inserted in the reaction tube and rotating in the reaction tube. A rod, a substrate holding jig that holds a substrate to be grown with its main surface facing downward only at its peripheral portion and is held by the support rod above the back surface of the substrate to be grown, and the back surface of the substrate to be grown In a vertical vapor phase growth apparatus having an induction-heated body directly loaded on top and performing crystal growth using a high-frequency induction heating method, an area of a bottom surface of the induction-heated body is larger than that of the growth substrate. Also, the substrate holding jig has a plurality of substrate holding claws at right angles to the axial direction of the rotating support rod, and the upper surface of the substrate holding claws, that is, the surface of the substrate holding claw that contacts the growth substrate. Has a stepped portion that is shallower than the thickness of the substrate to be grown. Since the growth substrate has a structure that is retained in part, it can hold the wafer by increasing the positional accuracy at the time of wafer insertion regardless of the size of the wafer by the substrate holding claws having a stepped portion. In addition, since the area of the bottom surface of the induction-heated body is made larger than that of the growth substrate, the edge effect is reduced, the thickness unevenness of the vapor phase growth layer around the wafer can be improved, and the film thickness within the wafer surface can be improved. It is possible to obtain a vapor phase growth layer having excellent uniformity. Further, since the temperature difference between the peripheral portion and the central portion of the growth substrate due to the temperature distribution of the induction-heated body is reduced and the thermal distortion of the growth substrate is suppressed, the occurrence of defects such as slip lines due to this cause. It can be suppressed. Furthermore, since the temperature distribution in the plane of the wafer is made uniform, the distribution of the film characteristics caused by the temperature distribution is also improved, and a more uniform and good quality crystal growth layer can be obtained. This is effective even if the support rod and the substrate holding jig are integrated.
【0065】請求項3の縦型気相成長装置では、反応室
内に設置され、反応ガスを下部から導入して上部に排出
する縦型反応管と、反応管内に挿入され反応管内で回転
する支持棒と、主面を下方に向けた被成長基板をその周
辺部のみで保持し該被成長基板の裏面の上方に位置する
前記支持棒に保持された基板保持治具と、被成長基板の
裏面上に直に積載された被誘導加熱体とを有し、高周波
誘導加熱方式を用いて結晶成長を行なう縦型気相成長装
置において、前記被誘導加熱体の底面の面積が前記被成
長基板よりも大きくて、また、別室で被成長基板を基板
保持治具に保持してから反応室に移動し、支持棒に設け
られた基板保持治具受け部に保持できるように、前記基
板保持治具として、前記被誘導加熱体が入ることが可能
な筒状の本体と、該本体の下部に設けられ前記回転する
支持棒の軸方向に直角に突出して主面を下方に向けた被
成長基板の周辺部を保持する複数個の基板保持爪と、本
体上部に設けられ前記支持棒の基板保持治具受け部と係
合される本体の外径よりも大きな保持用リング部とを有
し、前記支持棒に対して着脱可能である第1の基板保持
治具と、該第1の基板保持治具に主面を下方に向けて被
成長基板の裏面上に直に積載した被成長基板よりも大き
く基板保持治具の内径よりも若干小さい被誘導加熱体と
同程度の直径の絶縁板とを有することを特徴とする基板
保持治具を用い、該基板保持治具により被成長基板が搬
送される構成なので、前記絶縁板の自重により被成長基
板を押さえることができ、第1の基板保持治具の内径よ
りも充分小さい基板を保持する場合でも基板保持爪に段
部を設ける必要がなく、基板搬送時の被成長基板の移動
を防止することができる。従って、ウエハーの大きさに
よらずウエハーの位置精度を高くして基板搬送すること
ができる。また、被誘導加熱体の底面の面積を被成長基
板よりも大きくしているのでエッジ効果が低減され、ウ
エハー周辺部の気相成長層の厚さむら等が改善でき、ウ
エハー面内の均一性に優れた気相成長層を得ることがで
きる。また、被誘導加熱体の温度分布が原因である被成
長基板の周辺部と中心部の温度差は小さくなり被成長基
板の熱歪が抑えられるので、この原因によるスリップラ
イン等の欠陥の発生が抑えられ、更にウエハー面内の温
度分布が均一化されるので、温度分布が原因であった膜
特性の分布も改善され、さらに均一で良質の結晶成長層
を得ることができる。また別な効果として、結晶成長時
にカーボンサセプター主面上及び側面への多結晶の堆積
が抑えられる。特にカーボンサセプター主面上への多結
晶の堆積は、成長回数を重ねるとカーボンサセプターと
被成長基板との接触状態を悪くして温度分布を大きく
し、再現性、均一性などに悪影響を及ぼす原因になるの
でメンテナンスが必要である。この絶縁板は基板搬送時
に第1の基板保持治具と一緒に搬送するので、その都度
交換して第1の基板保持治具と共に王水等で洗浄ができ
るので、被誘導加熱体等、反応室内の汚れを低減でき、
反応管を取り外してカーボンサセプター等を洗浄するよ
うな大掛かりなメンテナンスの頻度を少なくできる。ま
た、被誘導加熱体の汚れが低減されることから、被誘導
加熱体を洗浄する回数が減り洗浄後の脱ガス工程を少な
くできる効果も得られる。In the vertical vapor phase growth apparatus of the third aspect, a vertical reaction tube installed in the reaction chamber for introducing the reaction gas from the lower part and discharging it to the upper part, and a support inserted in the reaction tube and rotating in the reaction tube. A rod, a substrate holding jig which holds a substrate to be grown whose main surface faces downward only at its peripheral portion and is held by the support rod above the back surface of the substrate to be grown, and a back face of the substrate to be grown In a vertical vapor phase growth apparatus having an induction-heated body directly mounted on top and performing crystal growth using a high-frequency induction heating method, the area of the bottom surface of the induction-heated body is greater than that of the growth substrate. The substrate holding jig is so large that it can be held in the substrate holding jig receiving portion provided on the support rod after the substrate to be grown is held in the separate chamber and then moved to the reaction chamber. As a cylindrical body into which the induction-heated body can be inserted, A plurality of substrate holding claws provided on the lower part of the main body, which project at right angles to the axial direction of the rotating support rod and hold the peripheral part of the substrate to be grown with the main surface facing downward, and the support provided on the upper part of the main body. A first substrate holding jig that has a holding ring portion that is larger than the outer diameter of the main body engaged with the substrate holding jig receiving portion of the rod, and that is removable from the support rod; The same diameter as the induction-heated body, which is larger than the substrate to be grown and is slightly smaller than the inner diameter of the substrate holding jig, which is directly mounted on the back surface of the substrate to be grown with the main surface facing downward on the substrate holding jig of No. 1 Since the substrate holding jig is characterized by having an insulating plate, and the substrate to be grown is transported by the substrate holding jig, the substrate to be grown can be pressed by the weight of the insulating plate. When holding a substrate that is sufficiently smaller than the inner diameter of the 1st substrate holding jig Can also not necessary to provide the stepped portion on the substrate holding claw, to prevent movement of the growth substrate during substrate transfer. Therefore, regardless of the size of the wafer, the positional accuracy of the wafer can be increased and the substrate can be transferred. In addition, since the area of the bottom surface of the induction-heated body is made larger than that of the substrate to be grown, the edge effect is reduced, the thickness unevenness of the vapor phase growth layer in the peripheral area of the wafer can be improved, and the uniformity in the wafer surface can be improved. An excellent vapor phase growth layer can be obtained. Further, since the temperature difference between the peripheral portion and the central portion of the growth substrate due to the temperature distribution of the induction-heated body is reduced and the thermal distortion of the growth substrate is suppressed, the occurrence of defects such as slip lines due to this cause. Since the temperature distribution is suppressed and the temperature distribution in the wafer surface is made uniform, the distribution of the film characteristics caused by the temperature distribution is also improved, and a more uniform and good quality crystal growth layer can be obtained. As another effect, the deposition of polycrystals on the main surface and side surfaces of the carbon susceptor during crystal growth can be suppressed. In particular, the deposition of polycrystals on the main surface of the carbon susceptor causes a bad contact state between the carbon susceptor and the substrate to be grown and increases the temperature distribution as the number of times of growth increases, which adversely affects reproducibility and uniformity. Therefore, maintenance is required. Since this insulating plate is carried together with the first substrate holding jig when carrying the substrate, it can be replaced each time and washed with aqua regia together with the first substrate holding jig. It can reduce the amount of dirt in the room,
It is possible to reduce the frequency of large-scale maintenance such as cleaning the carbon susceptor by removing the reaction tube. Further, since the contamination of the induction-heated body is reduced, the number of times of cleaning the induction-heated body is reduced, and the degassing step after cleaning can be reduced.
【0066】請求項4の縦型気相成長装置においては、
被成長基板を取り付けた基板保持治具を保持した支持棒
とは独立に上下方向に移動可能なサセプター支持棒と、
支持棒に保持された基板保持治具の上方に位置するサセ
プター待機部とを有した構造であるので、別室で主面を
下方に向けた被成長基板を取り付けた基板保持治具を横
方向から反応室に移動して支持棒に保持して、被成長基
板の裏面上に被誘導加熱体をサセプター待機部から下方
に移動して積載することができ、被誘導加熱体を反応室
に残したまま基板搬送を行なうことができ、脱ガス等が
容易になるので、原料ガスを下部から供給し成長に寄与
しなかった不用なガスを上部から排出する構造の高周波
誘導加熱方式を用いた縦型気相成長装置においても、被
成長基板をセットする時、酸素等の吸着による反応室へ
の汚染が低減される効果がある。そのため成長層の品質
低下を防ぐことができる。In the vertical vapor phase growth apparatus of claim 4,
A susceptor support rod that is vertically movable independently of a support rod that holds a substrate holding jig to which a growth substrate is attached,
Since the structure has a susceptor standby portion located above the substrate holding jig held by the support rod, the substrate holding jig with the growth substrate whose main surface faces downward is attached in a separate chamber from the lateral direction. After moving to the reaction chamber and holding it by the support rod, the induction-heated body can be moved downward from the susceptor standby portion and placed on the back surface of the growth substrate, and the induction-heated body was left in the reaction chamber. Since the substrate can be transported as it is and degassing etc. becomes easy, a vertical type using a high frequency induction heating method with a structure in which a raw material gas is supplied from the bottom and unnecessary gas that did not contribute to growth is exhausted from the top Also in the vapor phase growth apparatus, when the growth substrate is set, there is an effect that contamination of the reaction chamber due to adsorption of oxygen or the like is reduced. Therefore, the quality deterioration of the growth layer can be prevented.
【0067】請求項5の縦型気相成長装置では、請求項
4の縦型気相成長装置において、まだ課題の残っていた
密着性については、被誘導加熱体が被成長基板の裏面上
に直に積載したときに、被成長基板の裏面の上方にある
支持棒と一緒に回転するサセプター支持棒に対して上下
方向に遊びを持つ構造を有しており、更に被誘導加熱体
は多少動くことができるので、万一、被誘導加熱体の底
面と被成長基板の裏面の平行度が多少ずれている場合で
もそのずれを吸収でき、一部を強く押し付けすぎること
もなく、複数個の基板保持爪には均一に力が加わり、被
誘導加熱体、被成長基板、基板保持爪の間は密着性が良
くなる。しかも再現性良く均一に基板を保持できるの
で、再現性の良い膜ができるという効果が付加される。According to the vertical type vapor phase growth apparatus of claim 5, in the vertical type vapor phase growth apparatus of claim 4, with respect to the adhesion which still has a problem, the induction-heated body is on the back surface of the growth substrate. When loaded directly, it has a structure that has play in the vertical direction with respect to the susceptor support rod that rotates together with the support rod above the back surface of the growth substrate, and the induction-heated body moves slightly Therefore, even if the parallelism between the bottom surface of the induction-heated body and the back surface of the substrate to be grown is slightly deviated, the deviation can be absorbed and a part of the substrate is not pressed too hard. A force is evenly applied to the holding claws, and the adhesion between the induction-heated body, the substrate to be grown, and the substrate holding claws is improved. Moreover, since the substrate can be held uniformly with good reproducibility, the effect of forming a film with good reproducibility is added.
【0068】また、請求項6の縦型気相成長装置におい
ては、被誘導加熱体を、被成長基板の裏面の上方にある
支持棒と一緒に回転するサセプター支持棒に保持固定さ
れた主となる第1の被誘導加熱体と、第1の被誘導加熱
体と該被成長基板の間に第1の被誘導加熱体よりも軽く
第1の被誘導加熱体と接しないで該被成長基板の裏面上
に直に積載した第2の被誘導加熱体とに分けた構成であ
るので、該被誘導加熱体の自重による被成長基板に加わ
る力が低減され、被成長基板に加わる応力を低減できる
ので、スリップライン等の欠陥、ウエハーの反り等が低
減される。そのため良質なエピタキシャル成長層を得る
ことができる。また、第1の被誘導加熱体は常に反応室
内にあり、基板と一緒に搬送される第2の被誘導加熱体
は薄いので洗浄も容易で吸着した不純物ガスも容易に脱
ガスできるので酸素等の吸着による反応室の汚染が低減
され成長層の品質低下を防ぐことができる。Further, in the vertical vapor phase growth apparatus according to the sixth aspect of the present invention, the induction-heated body is held and fixed to the susceptor support rod which rotates together with the support rod above the rear surface of the substrate to be grown. And a first induction-heated body that is lighter than the first induction-heated body and does not contact the first induction-heated body between the first induction-heated body and the growth substrate. Since it is divided into a second induction-heated body directly mounted on the back surface of the, the force applied to the growth substrate by the weight of the induction-heated body is reduced, and the stress applied to the growth substrate is reduced. Therefore, defects such as slip lines and warp of the wafer can be reduced. Therefore, a good quality epitaxial growth layer can be obtained. Further, the first induction-heated body is always in the reaction chamber, and the second induction-heated body conveyed together with the substrate is thin, so cleaning is easy and adsorbed impurity gas can be easily degassed, so that oxygen or the like Contamination of the reaction chamber due to the adsorption of R.
【0069】また、請求項7の縦型気相成長装置では、
請求項6の縦型気相成長装置の、第2の被誘導加熱体の
底面の面積を被成長基板よりも大きくし、前記基板保持
治具は回転する支持棒の軸方向に直角に複数個の基板保
持爪を有しており、基板保持爪の上面すなわち被成長基
板に接する方の面には被成長基板の厚さよりも浅い段部
が形成されていて、その段部に被成長基板が保持される
構造を有しているので、段部を有する基板保持爪により
ウエハーの大きさによらずウエハー挿入時の位置精度を
高くしてウエハーを保持することができる。また、該被
誘導加熱体の自重による被成長基板に加わる力の低減に
よってスリップライン等の欠陥、ウエハーの反りが低減
される。また、被誘導加熱体の底面の面積を被成長基板
よりも大きくしているのでエッジ効果が低減され、ウエ
ハー周辺部の気相成長層の厚さむら等も改善できるの
で、膜厚の均一性を良くすることができる。さらに、被
誘導加熱体の温度分布が原因である被成長基板の周辺部
と中心部の温度差は小さくなり被成長基板の熱歪が抑え
られるので、この原因によるスリップライン等の欠陥の
発生が抑えられる。また、ウエハー面内の温度分布の均
一性も改善されるので、温度分布が原因であった膜特性
の分布も改善できる。このようなわけでウエハー面内の
均一性に優れた良質なエピタキシャル成長層を得ること
ができる。Further, in the vertical vapor phase growth apparatus of claim 7,
The vertical vapor phase growth apparatus according to claim 6, wherein the area of the bottom surface of the second induction-heated body is larger than that of the substrate to be grown, and the plurality of substrate holding jigs are perpendicular to the axial direction of the rotating support rod. Of the substrate holding claw, the upper surface of the substrate holding claw, that is, the surface in contact with the substrate to be grown is formed with a step portion shallower than the thickness of the substrate to be grown, Since it has a structure to be held, the wafer can be held by the substrate holding claw having the step portion with high positional accuracy at the time of inserting the wafer regardless of the size of the wafer. Further, by reducing the force applied to the growth substrate by the weight of the induction-heated body, defects such as slip lines and wafer warp are reduced. In addition, since the area of the bottom surface of the induction-heated body is made larger than that of the growth substrate, the edge effect is reduced and unevenness in the thickness of the vapor phase growth layer around the wafer can be improved. Can be better. Furthermore, since the temperature difference between the peripheral portion and the central portion of the growth substrate due to the temperature distribution of the induction-heated body is reduced and the thermal strain of the growth substrate is suppressed, the occurrence of defects such as slip lines due to this cause. It can be suppressed. In addition, the uniformity of the temperature distribution within the wafer surface is also improved, so that the distribution of the film characteristics caused by the temperature distribution can also be improved. As a result, it is possible to obtain a high-quality epitaxial growth layer having excellent uniformity within the wafer surface.
【0070】また、請求項8の縦型気相成長装置では、
請求項6に示す縦型気相成長装置において、第2の被誘
導加熱体は、被成長基板の裏面の上方にある支持棒と一
緒に回転するサセプター支持棒に保持された第1の被誘
導加熱体に対して上下方向に遊びを持って保持される構
造であるので、被誘導加熱体の自重による被成長基板に
加わる力の低減によってスリップライン等の欠陥、ウエ
ハーの反りが低減されると共に、第2の被誘導加熱体を
も反応室から外に出す必要がなくなり、脱ガス等が容易
になるので、被成長基板搬送時の酸素等の吸着による反
応室への不純物の持込みが更に低減される効果がある。
そのため汚染が更に低減され、成長層の品質低下を防ぐ
ことができる。Further, in the vertical vapor phase growth apparatus of claim 8,
The vertical vapor deposition apparatus according to claim 6, wherein the second induction-heated body is held by a susceptor support rod that rotates together with the support rod above the back surface of the growth substrate. Since the structure is held with play in the vertical direction with respect to the heating body, defects such as slip lines and warpage of the wafer are reduced by reducing the force applied to the growth substrate by the weight of the induction heating body by itself. Since it is not necessary to take the second induction-heated body out of the reaction chamber, and degassing and the like are facilitated, carry-in of impurities into the reaction chamber due to adsorption of oxygen and the like during transfer of the growth substrate is further reduced. Is effective.
Therefore, contamination can be further reduced and deterioration of the quality of the grown layer can be prevented.
【0071】請求項9の縦型気相成長装置では、請求項
8に示す縦型気相成長装置において、第2の被誘導加熱
体と被成長基板の間に被成長基板より大きく前記基板保
持治具の内径よりも若干小さい第2の被誘導加熱体と同
程度の直径の絶縁板を挿入するので、基板保持治具の基
板保持爪に被成長基板を載せてその上に該絶縁板を載せ
ているので、絶縁板の自重により被成長基板を押さえる
ことができ、基板保持治具の内径よりも充分小さい基板
を保持する場合でも基板保持爪に段部を設ける必要がな
く、基板搬送時の被成長基板の移動を防止することがで
きる。このように本発明ではウエハーの大きさによらず
ウエハーの位置精度を高くして基板搬送することができ
る。また、被誘導加熱体の底面の面積を被成長基板より
も大きくしているのでエッジ効果が低減され、ウエハー
周辺部の気相成長層の厚さむら等が改善でき、ウエハー
面内の膜厚の均一性に優れた気相成長層を得ることがで
きる。また、第2の被誘導加熱体の温度分布が原因であ
る被成長基板の周辺部と中心部の温度差は小さくなり被
成長基板の熱歪が抑えられるので、この原因によるスリ
ップライン等の欠陥の発生が抑えられる。さらにウエハ
ー面内の温度分布が均一化されるので、温度分布が原因
であった膜特性の分布も改善され、さらに均一で良質の
結晶成長層を得ることができる。また、結晶成長時にカ
ーボンウエハー上への多結晶の堆積が抑えられる効果も
得られる。この絶縁板は基板搬送時に基板保持治具と一
緒に搬送するのでそのつど交換、洗浄ができるので、反
応管を取り外してカーボンサセプター等を洗浄するよう
な大掛かりなメンテナンスの頻度を少なくできる。According to a ninth aspect of the vertical vapor phase growth apparatus, in the vertical type vapor phase growth apparatus according to the eighth aspect, the substrate is held between the second induction-heated body and the growth substrate by a larger amount than the growth substrate. Since the insulating plate having the same diameter as the second induction-heated body, which is slightly smaller than the inner diameter of the jig, is inserted, the substrate to be grown is placed on the substrate holding claw of the substrate holding jig and the insulating plate is placed thereon. Since it is mounted, the substrate to be grown can be pressed by the weight of the insulating plate, and even when holding a substrate that is sufficiently smaller than the inner diameter of the substrate holding jig, it is not necessary to provide a step on the substrate holding claw, and the substrate can be transported. It is possible to prevent the growth substrate from moving. As described above, according to the present invention, it is possible to transfer the substrate with high wafer position accuracy regardless of the size of the wafer. In addition, since the area of the bottom surface of the induction-heated body is made larger than that of the growth substrate, the edge effect is reduced, the thickness unevenness of the vapor phase growth layer around the wafer can be improved, and the film thickness within the wafer surface can be improved. It is possible to obtain a vapor phase growth layer having excellent uniformity. Further, since the temperature difference between the peripheral portion and the central portion of the growth substrate due to the temperature distribution of the second induction-heated body is reduced and the thermal distortion of the growth substrate is suppressed, defects such as slip lines due to this cause are caused. Can be suppressed. Further, since the temperature distribution in the wafer surface is made uniform, the distribution of the film characteristics caused by the temperature distribution is also improved, and a more uniform and high quality crystal growth layer can be obtained. In addition, the effect of suppressing the deposition of polycrystal on the carbon wafer during crystal growth can be obtained. Since this insulating plate is transferred together with the substrate holding jig during the transfer of the substrate, it can be replaced and cleaned each time, so that the frequency of large-scale maintenance such as removing the reaction tube and cleaning the carbon susceptor can be reduced.
【0072】請求項10の縦型気相成長装置では、請求
項6に記載した縦型気相成長装置において、被成長基板
と第2の被誘導加熱体を取り付けた基板保持治具を保持
する支持棒とは独立に上下方向に移動可能なサセプター
支持棒と、支持棒に保持された基板保持治具の上方にサ
セプター待機部とを有した構造であるので、別室で主面
を下方に向けた被成長基板とその上に第2の被誘導加熱
体を取り付けた基板保持治具を横方向から反応室に移動
して支持棒に保持して、第2の被誘導加熱体を被成長基
板の裏面上に数mm離した位置、つまり、被成長基板に
被誘導加熱体の自重が伝わらなく且つ誘導加熱の可能な
位置に被誘導加熱体をサセプター待機部から下方に移動
し、その位置を制御することができる。また、被誘導加
熱体を反応室に残したまま基板搬送を行なうことがで
き、被成長基板をセットする時、酸素等の吸着による反
応室の汚染が低減され成長層の品質低下を防ぐことがで
きる効果が付加される。According to a tenth aspect of the vertical vapor phase growth apparatus, in the vertical type vapor phase growth apparatus according to the sixth aspect, the substrate holding jig to which the substrate to be grown and the second induction heated body are attached is held. It has a structure that has a susceptor support rod that can move up and down independently of the support rod, and a susceptor standby part above the substrate holding jig held by the support rod, so that the main surface faces downward in a separate room. The substrate to be grown and the substrate holding jig on which the second object to be heated are mounted are laterally moved to the reaction chamber and held by the supporting rod, and the second object to be heated is grown on the substrate to be grown. Move the induction-heated body downward from the susceptor standby part to a position separated by a few mm on the back surface of the substrate, that is, a position where the weight of the induction-heated body is not transmitted to the growth substrate and induction heating is possible, and move that position. Can be controlled. Further, the substrate can be transported while leaving the induction-heated body left in the reaction chamber, and when the growth substrate is set, contamination of the reaction chamber due to adsorption of oxygen and the like can be reduced and deterioration of the quality of the growth layer can be prevented. The effect that can be added is added.
【0073】請求項11の縦型気相成長装置では、被誘
導加熱体を、被成長基板の裏面の上方にある支持棒と一
緒に回転するサセプター支持棒に保持された主となる第
1の被誘導加熱体と、被成長基板の裏面上に直に接した
第1の被誘導加熱体よりも軽くて被成長基板よりも大き
い第2の被誘導加熱体とに分けて、第2の被誘導加熱体
は被成長基板の裏面の上方にある回転する支持棒に保持
された第1の基板保持治具により保持し、被成長基板は
前記基板保持治具とは別の第2の基板保持治具により第
2の被誘導加熱体に保持した構造であるので、被成長基
板に加わる力は重い被誘導加熱体の自重によるものでは
なく、第2の基板保持治具を用いて第2の被誘導加熱体
に保持した時に加わる力が主であり、適切な力で保持す
ることにより被成長基板に加わる力が低減され、被成長
基板に加わる応力を低減できるので、スリップライン等
の欠陥、ウエハーの反り等が低減される。また、第2の
被誘導加熱体の底面の面積を被成長基板よりも大きくし
ているのでエッジ効果が低減され、ウエハー周辺部の気
相成長層の厚さむら等も改善でき、膜厚の均一性がよく
なる。さらに、被誘導加熱体の温度分布が原因である被
成長基板の周辺部と中心部の温度差は小さくなり被成長
基板の熱歪が抑えられるので、この原因によるスリップ
ライン等の欠陥の発生が抑えられる。さらにウエハー面
内の温度分布が均一化されるので、温度分布が原因であ
った膜特性の分布も改善される。このように本発明の装
置ではウエハー面内の均一性に優れた良質なエピタキシ
ャル成長層を得ることができる。さらに、第2の基板保
持治具を取り付ける位置を適当に設けることで不定形の
ウエハーを用いることも可能となる。また、ウエハーの
大きさ、形状によらず位置精度を高くしてウエハーを保
持することができる。In the vertical type vapor phase growth apparatus according to the eleventh aspect of the present invention, the induction heated body is held by the main susceptor supporting rod which rotates together with the supporting rod above the back surface of the substrate to be grown. The second object to be heated is divided into the second object to be heated and the second object to be heated which is lighter than the first object to be heated directly on the back surface of the substrate to be grown and larger than the first substrate to be grown. The induction heating body is held by a first substrate holding jig held by a rotating support rod above the back surface of the growth substrate, and the growth substrate is held by a second substrate holding separate from the substrate holding jig. Since the structure is held by the jig on the second induction-heated body, the force applied to the growth substrate is not due to the heavy weight of the induction-heated body, but the second substrate-holding jig is used. The force that is applied to the induction-heated body when it is held is the main, and it is possible to perform The force applied to the substrate is reduced, since it is possible to reduce the stress applied to the growth substrate, defects such as slip lines, warpage of the wafer is reduced. In addition, since the area of the bottom surface of the second induction-heated body is made larger than that of the growth substrate, the edge effect is reduced, unevenness of the vapor phase growth layer around the wafer can be improved, and the film thickness can be reduced. Improves uniformity. Furthermore, since the temperature difference between the peripheral portion and the central portion of the growth substrate due to the temperature distribution of the induction-heated body is reduced and the thermal strain of the growth substrate is suppressed, the occurrence of defects such as slip lines due to this cause. It can be suppressed. Further, since the temperature distribution in the wafer surface is made uniform, the distribution of the film characteristics caused by the temperature distribution is also improved. As described above, with the apparatus of the present invention, it is possible to obtain a high-quality epitaxial growth layer having excellent uniformity within the wafer surface. Furthermore, by providing an appropriate position for attaching the second substrate holding jig, it is possible to use an amorphous wafer. In addition, the wafer can be held with high positional accuracy regardless of the size and shape of the wafer.
【0074】このように、本発明によれば、反応ガスを
下部から導入して上部に排出する縦型反応管と、主面を
下方に向けて周辺部のみで保持された被成長基板と、被
成長基板を加熱するための被誘導加熱体とを有し、高周
波誘導加熱方式を用いた縦型気相成長装置において、ウ
エハーの大きさによらず位置精度を高くしつつ基板搬送
すること、反応室への不純物の持込みを低減すること、
膜厚の均一性を良くすること、熱歪が原因であるスリッ
プライン等の欠陥、ウエハーの反り等の発生を低減する
こと、被誘導加熱体の自重が原因であるスリップライン
等の欠陥、ウエハーの反り、ウエハーの割れ等の発生を
低減すること、等が可能となり、均一性に優れた良質な
エピタキシャル成長層を得ることができた。As described above, according to the present invention, the vertical reaction tube which introduces the reaction gas from the lower part and discharges it to the upper part, and the growth substrate which is held only in the peripheral part with the main surface facing downward, In a vertical vapor phase growth apparatus having an induction heated body for heating a growth substrate and using a high frequency induction heating method, the substrate is conveyed while increasing the position accuracy regardless of the size of the wafer, To reduce the introduction of impurities into the reaction chamber,
Improving film thickness uniformity, reducing defects such as slip lines due to thermal strain, and reducing wafer warpage, defects such as slip lines due to the weight of the induction-heated body It has become possible to reduce the occurrence of warpage, cracking of the wafer, etc., and to obtain a high-quality epitaxial growth layer with excellent uniformity.
【図1】本発明の第1の実施例を示す縦型気相成長装置
の要部断面図である。FIG. 1 is a sectional view of an essential part of a vertical vapor phase growth apparatus showing a first embodiment of the present invention.
【図2】図1に示す縦型気相成長装置のA領域部分の拡
大図である。FIG. 2 is an enlarged view of a region A of the vertical vapor deposition apparatus shown in FIG.
【図3】図1に示す縦型気相成長装置の基板保持部をB
方向から見たときの平面図である。FIG. 3 shows the substrate holding part of the vertical vapor deposition apparatus shown in FIG.
It is a top view when it sees from a direction.
【図4】従来の装置を用いたときの膜厚分布の例を示す
図である。FIG. 4 is a diagram showing an example of a film thickness distribution when a conventional device is used.
【図5】本発明の装置を用いたときの膜厚分布の例を示
す図である。FIG. 5 is a diagram showing an example of film thickness distribution when the apparatus of the present invention is used.
【図6】本発明の第2の実施例を示す縦型気相成長装置
の基板保持部の断面図である。FIG. 6 is a sectional view of a substrate holding part of a vertical vapor phase growth apparatus showing a second embodiment of the present invention.
【図7】本発明の第3の実施例を示す縦型気相成長装置
の要部断面図である。FIG. 7 is a cross-sectional view of essential parts of a vertical vapor phase growth apparatus showing a third embodiment of the present invention.
【図8】図7に示す縦型気相成長装置のC領域部分の拡
大図である。8 is an enlarged view of a C region portion of the vertical vapor phase growth apparatus shown in FIG.
【図9】図7に示す縦型気相成長装置の基板保持部をD
方向から見たときの平面図である。FIG. 9 shows a substrate holding part of the vertical vapor deposition apparatus shown in FIG.
It is a top view when it sees from a direction.
【図10】本発明の第4の実施例を示す縦型気相成長装
置の基板保持部の断面図である。FIG. 10 is a cross-sectional view of a substrate holding portion of a vertical vapor phase growth apparatus showing a fourth embodiment of the present invention.
【図11】本発明の第5の実施例を示す縦型気相成長装
置の要部断面図である。FIG. 11 is a cross-sectional view of essential parts of a vertical vapor phase growth apparatus showing a fifth embodiment of the present invention.
【図12】図11に示す縦型気相成長装置のE領域部分
の拡大図である。12 is an enlarged view of an E region portion of the vertical vapor phase growth apparatus shown in FIG.
【図13】図11に示す縦型気相成長装置の基板保持部
をF方向から見たときの平面図である。FIG. 13 is a plan view of the substrate holding unit of the vertical vapor deposition apparatus shown in FIG. 11 when viewed from the F direction.
【図14】第1の従来例を示す縦型気相成長装置の要部
断面図である。FIG. 14 is a cross-sectional view of essential parts of a vertical vapor phase growth apparatus showing a first conventional example.
【図15】第2の従来例を示す縦型気相成長装置の要部
断面図である。FIG. 15 is a cross-sectional view of a main part of a vertical vapor phase growth apparatus showing a second conventional example.
【図16】第3の従来例を示す縦型気相成長装置の要部
断面図である。FIG. 16 is a cross-sectional view of essential parts of a vertical vapor phase growth apparatus showing a third conventional example.
【図17】図15に示す縦型気相成長装置の基板保持部
の斜視図である。FIG. 17 is a perspective view of a substrate holding part of the vertical vapor phase growth apparatus shown in FIG.
1 :反応管 2 :給水口 3 :排水口 4 :原料ガス供給口 5 :キャリアガス供給口 6 :ガス排出口 7 :カーボンサセプター(被誘導加熱体) 8 :被成長基板 9 :基板保持治具(第1の基板保持治具) 9a:基板保持治具の本体 10:支持棒 11:高周波加熱コイル 12:基板保持爪 13:サセプター待機部 14:サセプター支持棒 15:カーボン固定ネジ 16:段部 20:カーボンウエハー(第2の被誘導加熱体) 21:第2の基板保持治具 22:間隙 23:第2のカーボン固定ネジ 24:絶縁板 25:基板保持治具受け部 26:保持用リング部 1: Reaction tube 2: Water supply port 3: Drainage port 4: Raw material gas supply port 5: Carrier gas supply port 6: Gas exhaust port 7: Carbon susceptor (induction heated body) 8: Growth substrate 9: Substrate holding jig (First substrate holding jig) 9a: Main body of substrate holding jig 10: Support rod 11: High frequency heating coil 12: Substrate holding claw 13: Susceptor standby portion 14: Susceptor support rod 15: Carbon fixing screw 16: Step portion 20: Carbon wafer (second induction heated body) 21: Second substrate holding jig 22: Gap 23: Second carbon fixing screw 24: Insulating plate 25: Substrate holding jig receiving portion 26: Holding ring Department
Claims (11)
導入して上部に排出する縦型反応管と、該反応管内にお
いて主面を下方に向けた被成長基板の裏面上に積載され
る被誘導加熱体とを有し、高周波誘導加熱方式を用いて
結晶成長を行なう縦型気相成長装置において、 前記反応管内に挿入され反応管内で回転する支持棒と、
該支持棒に保持され前記被成長基板を主面を下方に向け
て保持する基板保持治具とを備え、被成長基板の搬送に
は別室で被成長基板を基板保持治具に保持してから反応
室に移動し、支持棒に設けられた基板保持治具受け部に
保持できるように基板保持治具を用い、前記基板保持治
具は、前記被誘導加熱体が入ることが可能な筒状の本体
と、該本体の下部に設けられ前記回転する支持棒の軸方
向に直角に突出して主面を下方に向けた被成長基板の周
辺部を保持する複数個の平坦なまたは断部を有する基板
保持爪と、本体上部に設けられ前記支持棒の基板保持治
具受け部と係合される本体の外径よりも大きな保持用リ
ング部とを有し、前記支持棒に対して着脱可能であるこ
とを特徴とする縦型気相成長装置。1. A vertical reaction tube which is installed in a reaction chamber and which introduces a reaction gas from a lower part and discharges it to an upper part, and is loaded on a rear surface of a substrate to be grown whose main surface faces downward in the reaction tube. In a vertical vapor phase growth apparatus having an induction heated body and performing crystal growth using a high frequency induction heating method, a support rod that is inserted into the reaction tube and rotates in the reaction tube,
A substrate holding jig which is held by the support rod and holds the growth substrate with its main surface facing downward; and when the growth substrate is transported, the growth substrate is held in a separate chamber after being held by the substrate holding jig. The substrate holding jig is used so that it can be moved to the reaction chamber and held in the substrate holding jig receiving portion provided on the support rod. The substrate holding jig is a cylindrical shape into which the induction-heated body can be inserted. Body, and a plurality of flat or cut portions that are provided in the lower part of the body and project at right angles to the axial direction of the rotating support rod and hold the peripheral portion of the growth substrate with the main surface facing downward. It has a substrate holding claw and a holding ring portion that is provided on the upper part of the main body and is larger than the outer diameter of the main body that engages with the substrate holding jig receiving portion of the support rod, A vertical vapor phase growth apparatus characterized by being present.
導入して上部に排出する縦型反応管と、反応管内に挿入
され反応管内で回転する支持棒と、主面を下方に向けた
被成長基板をその周辺部のみで保持し該被成長基板の裏
面の上方に位置する前記支持棒に保持された基板保持治
具と、被成長基板の裏面上に直に積載された被誘導加熱
体とを有し、高周波誘導加熱方式を用いて結晶成長を行
なう縦型気相成長装置において、 前記被誘導加熱体の底面の面積が前記被成長基板よりも
大きくて、前記基板保持治具は、回転する支持棒の軸方
向に直角に複数個の基板保持爪を有しており、該基板保
持爪の上面すなわち被成長基板に接する方の面には被成
長基板の厚さよりも浅い段部が形成されていて、その段
部に被成長基板が保持される構造を有することを特徴と
する縦型気相成長装置。2. A vertical reaction tube installed in a reaction chamber for introducing a reaction gas from a lower part and discharging it to an upper part, a support rod inserted in the reaction tube and rotating in the reaction tube, and a main surface thereof directed downward. A substrate holding jig that holds the substrate to be grown only at its peripheral portion and is held by the support rod located above the back surface of the substrate to be grown, and induction heating directly loaded on the back surface of the substrate to be grown. In a vertical vapor deposition apparatus having a body and performing crystal growth using a high frequency induction heating method, an area of a bottom surface of the induction heated body is larger than that of the growth substrate, and the substrate holding jig is , Having a plurality of substrate holding claws at right angles to the axial direction of the rotating support rod, and the upper surface of the substrate holding claws, that is, the surface in contact with the growth substrate, has a step portion shallower than the thickness of the growth substrate. Is formed and the stepped portion holds the growth substrate. A vertical vapor phase growth apparatus characterized in that
導入して上部に排出する縦型反応管と、反応管内に挿入
され反応管内で回転する支持棒と、主面を下方に向けた
被成長基板をその周辺部のみで保持し該被成長基板の裏
面の上方に位置する前記支持棒に保持された基板保持治
具と、被成長基板の裏面上に直に積載された被誘導加熱
体とを有し、高周波誘導加熱方式を用いて結晶成長を行
なう縦型気相成長装置において、 前記被誘導加熱体の底面の面積が前記被成長基板よりも
大きくて、また、別室で被成長基板を基板保持治具に保
持してから反応室に移動し、支持棒に設けられた基板保
持治具受け部に保持できるように、前記基板保持治具と
して、前記被誘導加熱体が入ることが可能な筒状の本体
と、該本体の下部に設けられ前記回転する支持棒の軸方
向に直角に突出して主面を下方に向けた被成長基板の周
辺部を保持する複数個の基板保持爪と、本体上部に設け
られ前記支持棒の基板保持治具受け部と係合される本体
の外径よりも大きな保持用リング部とを有し、前記支持
棒に対して着脱可能である第1の基板保持治具と、該第
1の基板保持治具に主面を下方に向けて被成長基板の裏
面上に直に積載した被成長基板よりも大きく基板保持治
具の内径よりも若干小さい被誘導加熱体と同程度の直径
の絶縁板とを有することを特徴とする基板保持治具を用
い、該基板保持治具により被成長基板が搬送されること
を特徴とする縦型気相成長装置。3. A vertical reaction tube installed in a reaction chamber for introducing a reaction gas from a lower part and discharging it to an upper part, a supporting rod inserted into the reaction tube and rotating in the reaction tube, and a main surface thereof directed downward. A substrate holding jig that holds the growth substrate only at its peripheral portion and is held by the supporting rod located above the back surface of the growth substrate, and induction heating directly loaded on the back surface of the growth substrate. A vertical vapor deposition apparatus having a body and performing crystal growth using a high frequency induction heating method, wherein an area of a bottom surface of the induction-heated body is larger than that of the growth substrate, and the growth is performed in a separate room. The induction-heated body must be inserted as the substrate holding jig so that the substrate can be moved to the reaction chamber after being held by the substrate holding jig and then held by the substrate holding jig receiving portion provided on the support rod. And a cylindrical main body that can be rotated, and the rotating unit provided below the main body. A plurality of substrate holding claws projecting at right angles to the axial direction of the supporting rod and holding the peripheral portion of the substrate to be grown with the main surface facing downward; A first substrate holding jig that has a holding ring portion that is larger than the outer diameter of the main body to be engaged with and is removable from the support rod; It has an insulating plate of the same diameter as the induction-heated body larger than the growth substrate directly mounted on the back surface of the growth substrate and slightly smaller than the inner diameter of the substrate holding jig. A vertical type vapor phase growth apparatus characterized in that a substrate holding jig is used and a substrate to be grown is conveyed by the substrate holding jig.
導入して上部に排出する縦型反応管と、反応管内に挿入
され反応管内で回転する支持棒と、主面を下方に向けた
被成長基板をその周辺部のみで保持し該被成長基板の裏
面の上方に位置する前記支持棒に保持された基板保持治
具と、被成長基板の裏面上に直に積載された被誘導加熱
体とを有し、高周波誘導加熱方式を用いて結晶成長を行
なう縦型気相成長装置において、 被成長基板セット時においても被誘導加熱体は常に反応
管を含む外気が直接は入り込まない反応室内にあり、別
室で被成長基板を取り付けた基板保持治具が横方向から
反応室に移動し支持棒に保持されて、被成長基板の裏面
上に被誘導加熱体がサセプター待機部から下方に移動し
て積載されるように、被成長基板を取り付けた基板保持
治具を保持した支持棒とは独立に上下方向に移動可能な
サセプター支持棒と、支持棒に保持された基板保持治具
の上方に位置するサセプター待機部とを有した構造であ
ることを特徴とする縦型気相成長装置。4. A vertical reaction tube installed in a reaction chamber for introducing a reaction gas from a lower part and discharging it to an upper part, a support rod inserted into the reaction tube and rotating in the reaction tube, and a main surface thereof directed downward. A substrate holding jig that holds the growth substrate only at its peripheral portion and is held by the supporting rod located above the back surface of the growth substrate, and induction heating directly loaded on the back surface of the growth substrate. In a vertical vapor phase growth apparatus that has a body and performs crystal growth using a high-frequency induction heating method, the induction-heated body always contains a reaction tube and the reaction chamber does not directly enter the outside air even when the growth substrate is set In a separate chamber, the substrate holding jig to which the growth substrate is attached moves laterally to the reaction chamber and is held by the support rod, and the induction-heated body moves downward from the susceptor standby part on the back surface of the growth substrate The substrate to be grown so that With a structure that has a susceptor support rod that is vertically movable independently of the support rod that holds the attached substrate holding jig, and a susceptor standby portion that is located above the substrate holding jig that is held by the support rod. A vertical vapor phase growth apparatus characterized by being present.
積載したときに、被成長基板の裏面の上方にある支持棒
と一緒に回転するサセプター支持棒に対して上下方向に
遊びを持つ構造を有することを特徴とする請求項4記載
の縦型気相成長装置。5. The induction-heated body, when loaded on the back surface of the substrate to be grown, is vertically movable with respect to the susceptor support rod rotating together with the support rod above the back surface of the substrate to be grown. The vertical vapor phase growth apparatus according to claim 4, which has a structure having.
導入して上部に排出する縦型反応管と、反応管内に挿入
され反応管内で回転する支持棒と、主面を下方に向けた
被成長基板をその周辺部のみで保持し該被成長基板の裏
面の上方に位置する前記支持棒に保持された基板保持治
具と、被成長基板の裏面上に直に積載された被誘導加熱
体とを有し、高周波誘導加熱方式を用いて結晶成長を行
なう縦型気相成長装置において、 前記被誘導加熱体は、被成長基板の裏面の上方にある支
持棒と一緒に回転するサセプター支持棒に保持された主
となる第1の被誘導加熱体と、第1の被誘導加熱体と該
被成長基板の間に第1の被誘導加熱体よりも軽く第1の
被誘導加熱体と接しないで該被成長基板の裏面上に直に
積載した第2の被誘導加熱体とに分かれていることを特
徴とする縦型気相成長装置。6. A vertical reaction tube installed in a reaction chamber for introducing a reaction gas from a lower part and discharging it to an upper part, a support rod inserted in the reaction tube and rotating in the reaction tube, and a main surface thereof directed downward. A substrate holding jig that holds the substrate to be grown only at its peripheral portion and is held by the support rod located above the back surface of the substrate to be grown, and induction heating directly loaded on the back surface of the substrate to be grown. A vertical vapor deposition apparatus for growing crystals using a high frequency induction heating method, wherein the induction heated body is a susceptor support that rotates together with a support rod above the back surface of the growth substrate. A first first induction-heated body held by a rod, and a first induction-heated body which is lighter than the first induction-heated body between the first induction-heated body and the growth substrate. Separated into a second induction-heated body directly mounted on the back surface of the substrate to be grown without contact. The vertical vapor phase growth apparatus characterized in that
も大きくて、前記基板保持治具は回転する支持棒の軸方
向に直角に複数個の基板保持爪を有しており、該基板保
持爪の上面すなわち被成長基板に接する方の面には被成
長基板の厚さよりも浅い段部が形成されていて、その段
部に被成長基板が保持される構造を有することを特徴と
する請求項6記載の縦型気相成長装置。7. The second induction-heated body is larger than the substrate to be grown, and the substrate-holding jig has a plurality of substrate-holding claws at right angles to the axial direction of the rotating support rod. A step portion, which is shallower than the thickness of the growth substrate, is formed on the upper surface of the substrate holding claw, that is, the surface which is in contact with the growth substrate, and the growth substrate is held on the step portion. The vertical vapor phase growth apparatus according to claim 6.
裏面の上方にある支持棒と一緒に回転するサセプター支
持棒に保持された第1の被誘導加熱体に対して上下方向
に遊びを持って保持される構造であることを特徴とする
請求項6,7記載の縦型気相成長装置。8. The second induction-heated body is vertically arranged with respect to the first induction-heated body held by a susceptor support rod that rotates together with a support rod above the rear surface of the growth substrate. 8. The vertical vapor phase growth apparatus according to claim 6, wherein the vertical vapor phase growth apparatus has a structure in which it is held with play.
よりも大きくて、第2の被誘導加熱体と被成長基板の間
に被成長基板より大きく前記基板保持治具の内径よりも
若干小さい第2の被誘導加熱体と同程度の直径の絶縁板
が挿入されていることを特徴とする請求項8記載の縦型
気相成長装置。9. The second induction-heated body is larger than the growth target substrate, and is larger than the growth target substrate between the second induction heating target body and the growth target substrate and larger than the inner diameter of the substrate holding jig. 9. The vertical vapor phase growth apparatus according to claim 8, wherein an insulating plate having a diameter substantially the same as that of the second induction-heated body, which is slightly smaller, is inserted.
て、被成長基板セット時においても第1の被誘導加熱体
は常に反応管を含む外気が直接は入り込まない反応室内
にあり、別室で被成長基板と第2の被誘導加熱体を取り
付けた基板保持治具が横方向から反応室に移動し支持棒
に保持される構造の縦型気相成長装置において、第2の
被誘導加熱体上の接しない位置に第1の被誘導加熱体が
サセプター待機部から下方に移動できるように、回転す
る支持棒とは独立に上下方向に移動可能なサセプター支
持棒と、支持棒に保持された基板保持治具の上方にサセ
プター待機部とを有した構造であることを特徴とする縦
型気相成長装置。10. The vertical vapor phase growth apparatus according to claim 6, wherein the first induction-heated body is always in the reaction chamber including the reaction tube, which does not directly enter the outside air even when the growth substrate is set. In a vertical vapor phase growth apparatus having a structure in which a substrate holding jig to which a substrate to be grown and a second induction-heated body are attached in a separate chamber is moved laterally to a reaction chamber and held by a support rod, In order to move the first induction-heated body downward from the susceptor standby portion to a position on the induction heating body that is not in contact with the induction heating body, the susceptor support rod that is vertically movable independently of the rotating support rod and the support rod are provided. A vertical vapor phase growth apparatus having a structure having a susceptor standby portion above a held substrate holding jig.
ら導入して上部に排出する縦型反応管と、該反応管内に
おいて主面を下方に向けた被成長基板の裏面上に直に接
した被誘導加熱体とを有し、高周波誘導加熱方式を用い
て結晶成長を行なう縦型気相成長装置において、 前記被誘導加熱体は、前記被成長基板の裏面の上方にあ
る支持棒と一緒に回転するサセプター支持棒に保持され
た主となる第1の被誘導加熱体と、前記被成長基板の裏
面上に直に接した第1の被誘導加熱体よりも軽くて該被
成長基板よりも大きい第2の被誘導加熱体とに分かれて
いて、第2の被誘導加熱体は前記被成長基板の裏面の上
方にある回転する支持棒に保持された第1の基板保持治
具により保持され、前記被成長基板は前記第1の基板保
持治具とは別の第2の基板保持治具により第2の被誘導
加熱体に保持される構造を有することを特徴とする縦型
気相成長装置。11. A vertical reaction tube which is installed in a reaction chamber and which introduces a reaction gas from a lower part and discharges it to an upper part, and a direct contact with a rear surface of a substrate to be grown whose main surface faces downward in the reaction tube. In the vertical vapor phase growth apparatus for performing crystal growth using a high frequency induction heating method, the induction-heated body together with a support rod above the back surface of the growth substrate. The main first induction-heated body held by the susceptor support rod rotating in the direction of and the first induction-heated body directly contacting the back surface of the growth substrate are lighter than the growth-target substrate. And a second induction-heated body, which is larger than the second induction-heated body, and the second induction-heated body is held by a first substrate holding jig held by a rotating support rod above the back surface of the growth substrate. And the substrate to be grown is a second substrate different from the first substrate holding jig. A vertical vapor deposition apparatus having a structure in which it is held by a second induction-heated body by a plate holding jig.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6271094A JPH08139028A (en) | 1994-11-04 | 1994-11-04 | Vertical vapor growth equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6271094A JPH08139028A (en) | 1994-11-04 | 1994-11-04 | Vertical vapor growth equipment |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH08139028A true JPH08139028A (en) | 1996-05-31 |
Family
ID=17495279
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6271094A Pending JPH08139028A (en) | 1994-11-04 | 1994-11-04 | Vertical vapor growth equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH08139028A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006290676A (en) * | 2005-04-11 | 2006-10-26 | Hitachi Cable Ltd | Group iii-v nitride semiconductor substrate and method for manufacturing the same |
JP2007217797A (en) * | 2007-03-27 | 2007-08-30 | Ricoh Co Ltd | Crystal growth device, crystal production device and crystal production method |
US8366830B2 (en) | 2003-03-04 | 2013-02-05 | Cree, Inc. | Susceptor apparatus for inverted type MOCVD reactor |
US8372204B2 (en) | 2002-05-13 | 2013-02-12 | Cree, Inc. | Susceptor for MOCVD reactor |
-
1994
- 1994-11-04 JP JP6271094A patent/JPH08139028A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8372204B2 (en) | 2002-05-13 | 2013-02-12 | Cree, Inc. | Susceptor for MOCVD reactor |
US8366830B2 (en) | 2003-03-04 | 2013-02-05 | Cree, Inc. | Susceptor apparatus for inverted type MOCVD reactor |
JP2006290676A (en) * | 2005-04-11 | 2006-10-26 | Hitachi Cable Ltd | Group iii-v nitride semiconductor substrate and method for manufacturing the same |
US8143702B2 (en) | 2005-04-11 | 2012-03-27 | Hitachi Cable, Ltd. | Group III-V nitride based semiconductor substrate and method of making same |
JP2007217797A (en) * | 2007-03-27 | 2007-08-30 | Ricoh Co Ltd | Crystal growth device, crystal production device and crystal production method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6837940B2 (en) | Film-forming device with a substrate rotating mechanism | |
JP2654996B2 (en) | Vertical heat treatment equipment | |
US5246500A (en) | Vapor phase epitaxial growth apparatus | |
TW201921548A (en) | Epitaxy system integrated with high selectivity oxide removal and high temperature contaminant removal | |
KR20130014488A (en) | Semiconductor thin-film manufacturing method, semiconductor thin-film manufacturing apparatus, susceptor, and susceptor holding tool | |
US6547876B2 (en) | Apparatus for growing epitaxial layers on wafers by chemical vapor deposition | |
KR20080110482A (en) | Vapor phase growing apparatus and vapor phase growing method | |
KR20130047620A (en) | Film-forming method and film-forming apparatus | |
JPS612321A (en) | Vertical hot wall type cvd reactor | |
US20240033877A1 (en) | Apparatus and methods for susceptor deposition material removal | |
JP5040333B2 (en) | Vapor growth susceptor, vapor growth apparatus and vapor growth method | |
JPH08139028A (en) | Vertical vapor growth equipment | |
JPH1022226A (en) | Method and device for producing epitaxial wafer | |
JP2000021788A (en) | Apparatus for growing thin film and thin-film growing method using apparatus | |
JP3440769B2 (en) | Wafer adapter | |
JP2004260086A (en) | Manufacturing method of silicon wafer | |
JP2008294217A (en) | Vapor phase growth device and vapor phase growth method | |
TWI745656B (en) | Vapor growth method | |
US6283273B1 (en) | Substrate processing apparatus | |
JP2004103708A (en) | Jig for fabricating semiconductor device | |
JPH10275776A (en) | Semiconductor wafer manufacturing equipment | |
JP4364378B2 (en) | Horizontal vapor deposition equipment | |
JP2963145B2 (en) | Method and apparatus for forming CVD film | |
US20240141493A1 (en) | Single piece or two piece susceptor | |
JP2000031064A (en) | Method and device for horizontal vapor phase epitaxial growth |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20040622 |