JPH0812471A - Ceramic sliding member and method of manufacturing the same - Google Patents
Ceramic sliding member and method of manufacturing the sameInfo
- Publication number
- JPH0812471A JPH0812471A JP16891994A JP16891994A JPH0812471A JP H0812471 A JPH0812471 A JP H0812471A JP 16891994 A JP16891994 A JP 16891994A JP 16891994 A JP16891994 A JP 16891994A JP H0812471 A JPH0812471 A JP H0812471A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- sintered body
- silicon nitride
- heat treatment
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000000576 coating method Methods 0.000 claims abstract description 66
- 239000011248 coating agent Substances 0.000 claims abstract description 63
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 59
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 59
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 48
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 48
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 35
- 239000010432 diamond Substances 0.000 claims abstract description 35
- 238000010438 heat treatment Methods 0.000 claims description 51
- 239000000843 powder Substances 0.000 claims description 30
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000007858 starting material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 18
- 238000012360 testing method Methods 0.000 description 64
- 239000011575 calcium Substances 0.000 description 30
- 230000000052 comparative effect Effects 0.000 description 21
- 239000011777 magnesium Substances 0.000 description 15
- 239000002245 particle Substances 0.000 description 13
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 11
- 239000012299 nitrogen atmosphere Substances 0.000 description 10
- 239000012535 impurity Substances 0.000 description 9
- 238000009826 distribution Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 229910052749 magnesium Inorganic materials 0.000 description 8
- 239000012071 phase Substances 0.000 description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910052742 iron Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 239000003513 alkali Substances 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 5
- 239000002585 base Substances 0.000 description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 229910052791 calcium Inorganic materials 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910021385 hard carbon Inorganic materials 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000011812 mixed powder Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 238000010998 test method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000001464 adherent effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229940043430 calcium compound Drugs 0.000 description 2
- 150000001674 calcium compounds Chemical class 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000004453 electron probe microanalysis Methods 0.000 description 2
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(iii) oxide Chemical compound O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 description 2
- 238000004299 exfoliation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- WHJFNYXPKGDKBB-UHFFFAOYSA-N hafnium;methane Chemical compound C.[Hf] WHJFNYXPKGDKBB-UHFFFAOYSA-N 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001308 synthesis method Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 229910003440 dysprosium oxide Inorganic materials 0.000 description 1
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(iii) oxide Chemical compound O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000009489 vacuum treatment Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/0072—Heat treatment
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5001—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with carbon or carbonisable materials
- C04B41/5002—Diamond
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/10—Compositions or ingredients thereof characterised by the absence or the very low content of a specific material
- C04B2111/1031—Lime-free or very low lime-content materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Inorganic Chemistry (AREA)
- Laminated Bodies (AREA)
Abstract
(57)【要約】
【目的】 セラミックス焼結体の表面に密着性に優れた
ダイヤモンド又はダイヤモンド状炭素の被膜を備えたセ
ラミックス製摺動部材を、簡単な方法で、生産性良く、
且つ高い歩留りで形成し、提供する。
【構成】 窒化ケイ素又はサイアロンを主成分とするセ
ラミックス焼結体の表面上に、ダイヤモンド又はダイヤ
モンド状炭素の被膜を設けたセラミックス製摺動部材で
あって、該被膜の設けられたセラミックス焼結体の表面
から少なくとも100μmの深さの領域内のCa濃度
が、この領域より内部におけるCa濃度よりも減少して
いる。
(57) [Abstract] [Purpose] A ceramic sliding member provided with a diamond or diamond-like carbon coating having excellent adhesion on the surface of a ceramic sintered body is manufactured by a simple method with good productivity.
In addition, it is formed and provided with a high yield. A ceramic sliding member having a coating of diamond or diamond-like carbon on the surface of a ceramics sintered body containing silicon nitride or sialon as a main component, the ceramics sintered body having the coating. The concentration of Ca in the region at least 100 μm deep from the surface of is lower than the concentration of Ca inside this region.
Description
【0001】[0001]
【産業上の利用分野】本発明は、セラミックス焼結体か
らなる母材の表面にダイヤモンド又はダイヤモンド状炭
素の被膜を設けたセラミックス製摺動部材、及びその製
造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic sliding member in which a diamond or diamond-like carbon coating is provided on the surface of a base material made of a ceramic sintered body, and a method for producing the same.
【0002】[0002]
【従来の技術】セラミックスは高硬度であると共に、耐
熱性、耐摩耗性に優れ、特に窒化ケイ素又はサイアロン
を主成分とするセラミックスは強度、靭性、耐熱衝撃性
等の機械的特性にも優れているため、切削工具、耐摩工
具、その他の摺動部材として広く利用されている。2. Description of the Related Art Ceramics have high hardness and excellent heat resistance and wear resistance. Particularly, ceramics containing silicon nitride or sialon as a main component are excellent in mechanical properties such as strength, toughness and thermal shock resistance. Therefore, it is widely used as a cutting tool, an abrasion resistant tool, and other sliding members.
【0003】近年、かかるセラミックスの信頼性並びに
寿命を更に向上させるため、被覆層として硬度が極めて
高く、化学的に安定であり、耐摺動摩耗性に優れたダイ
ヤモンド又はダイヤモンド状炭素の被膜を設けることが
注目され、多くの分野でその研究開発が盛んに行われて
いる。しかし、ダイヤモンド又はダイヤモンド状炭素か
らなる被膜はセラミックスとの密着性が低く、被膜が剥
離しやすいという欠点がある。In recent years, in order to further improve the reliability and life of such ceramics, a coating film of diamond or diamond-like carbon having extremely high hardness, chemical stability and excellent sliding wear resistance is provided as a coating layer. This has attracted attention, and research and development has been actively conducted in many fields. However, a coating film made of diamond or diamond-like carbon has low adhesion to ceramics and has a drawback that the coating film is easily peeled off.
【0004】ダイヤモンド又はダイヤモンド状炭素被膜
のセラミックスへの密着性を向上させる試みとして、例
えば、特開平5−214532号公報には、超硬合金や
セラミックス焼結体に窒化アルミニウム膜を被覆し、そ
の上にダイヤモンド又は硬質炭素被膜を形成することが
提案されている。又、特開平4−254584号公報に
は、超硬合金やセラミックス焼結体とダイヤモンド又は
硬質炭素被膜の間の中間層として、非化学量論組成の窒
化チタン膜を用いることが記載されている。As an attempt to improve the adhesion of diamond or diamond-like carbon coating to ceramics, for example, in Japanese Unexamined Patent Publication No. 5-214532, a cemented carbide or a ceramic sintered body is coated with an aluminum nitride film, It has been proposed to form a diamond or hard carbon coating on top. Further, JP-A-4-254584 discloses that a titanium nitride film having a non-stoichiometric composition is used as an intermediate layer between a cemented carbide or a ceramics sintered body and a diamond or hard carbon coating. .
【0005】しかし、特開平5−214532号公報で
は、中間層に窒化アルミニウムを用いることによりダイ
ヤモンド又は硬質炭素被膜の密着性が向上する理由とし
て、炭化タングステンや炭化チタンのように炭素を固溶
している物質が基材である場合には、被膜形成中に生じ
る炭素の拡散や固溶を防ぐことができるためであるとし
ているが、基材が炭素を含まない窒化ケイ素等のセラミ
ックス焼結体の場合については具体的な説明がなされて
いない。However, in JP-A-5-214532, the reason why the adhesion of diamond or hard carbon coating is improved by using aluminum nitride for the intermediate layer is to dissolve carbon such as tungsten carbide or titanium carbide in solid solution. If the substance is a base material, it is said that it is possible to prevent the diffusion and solid solution of carbon that occurs during film formation. However, the base material does not contain carbon. A ceramic sintered body such as silicon nitride. No specific explanation has been given for the case.
【0006】又、特開平4−254584号公報におい
ては、中間層として炭素量を低減させた非化学量論組成
の炭化チタン膜を設けることにより、ダイヤモンド又は
硬質炭素被膜との界面では炭素の拡散により炭化チタン
が化学量論組成に近くなり、そのため基材側では炭素の
拡散が止まって炭化チタンが非化学量論組成のままであ
るから、大きな体積変化を生じず、基材との密着性が向
上することが述べられている。Further, in JP-A-4-254584, by providing a titanium carbide film having a non-stoichiometric composition with a reduced carbon content as an intermediate layer, carbon is diffused at the interface with a diamond or hard carbon coating. Makes titanium carbide close to the stoichiometric composition, so that carbon diffusion stops on the base material side and titanium carbide remains in the non-stoichiometric composition, so a large volume change does not occur and adhesion to the base material Is said to improve.
【0007】一方、特開平4−202075号公報に
は、窒化ケイ素を主成分とする焼結体の表面を酸又はア
ルカリで処理した後、ダイヤモンド又はダイヤモンド状
炭素被膜を形成することが開示されている。酸又はアル
カリで処理することにより、窒化ケイ素焼結体表面の粒
界及び粒界近傍のガラス質が優先的に腐食されて窒化ケ
イ素の柱状粒子が残り、微細な凹凸が形成され且つ表面
の窒化ケイ素の面積率が増加するため、基材表面の熱膨
張係数がダイヤモンドに一層近くなり、高い密着性が得
られることが記載されている。On the other hand, Japanese Patent Application Laid-Open No. 4-202075 discloses forming a diamond or diamond-like carbon coating after treating the surface of a sintered body containing silicon nitride as a main component with an acid or an alkali. There is. By treatment with an acid or an alkali, the grain boundaries on the surface of the silicon nitride sintered body and the vitreous in the vicinity of the grain boundaries are preferentially corroded to leave columnar particles of silicon nitride, forming fine irregularities and nitriding the surface. It is described that since the area ratio of silicon increases, the coefficient of thermal expansion of the surface of the base material becomes closer to that of diamond, and high adhesion can be obtained.
【0008】[0008]
【発明が解決しようとする課題】しかしながら、上記し
た従来の方法においても、セラミックス焼結体とダイヤ
モンド又はダイヤモンド状炭素被膜との密着性を十分に
向上させることは難しかった。即ち、窒化アルミニウム
や炭化チタン等の中間層を設ける方法では、中間層の形
成によって被覆回数と被膜数を増加させることになり、
中間層相互の間及び中間層とダイヤモンド又はダイヤモ
ンド状炭素の被膜との間で剥離が生じる可能性が高くな
る。However, even in the above-mentioned conventional method, it was difficult to sufficiently improve the adhesion between the ceramic sintered body and the diamond or diamond-like carbon coating. That is, in the method of providing the intermediate layer such as aluminum nitride or titanium carbide, the number of coatings and the number of coatings are increased by forming the intermediate layer,
Delamination is more likely to occur between the interlayers and between the interlayer and the diamond or diamond-like carbon coating.
【0009】又、セラミックス焼結体を酸又はアルカリ
で処理する方法では、表面の微細な凹凸形状に沿ってダ
イヤモンド又はダイヤモンド状炭素の被膜を形成するこ
とが難しく、且つ粒界のガラス相が溶け出して形成され
た空孔内部に被膜が十分に回り込まず、従って期待され
るほどの密着性の向上が得られない。Further, according to the method of treating the ceramics sintered body with an acid or an alkali, it is difficult to form a coating film of diamond or diamond-like carbon along the fine irregularities on the surface, and the glass phase of the grain boundary is melted. The coating does not sufficiently wrap around inside the formed pores, so that the expected improvement in adhesion cannot be obtained.
【0010】更に、セラミックス焼結体を酸又はアルカ
リで処理する方法の場合、フッ酸やフッ硝酸あるいは水
酸化ナトリウム等を用いるので、これらの管理のみなら
ず、安全性や環境面での対応が必要となる。加えて、酸
やアルカリによる腐食処理条件も厳密に管理する必要が
あり、セラミックス焼結体のガラス相が溶け過ぎたり又
は溶けなさ過ぎたりした場合には、密着性の低下を来
し、これにより歩留りの減少を引き起こす可能性があ
る。Further, in the case of the method of treating the ceramics sintered body with acid or alkali, since hydrofluoric acid, hydrofluoric nitric acid, sodium hydroxide or the like is used, not only management of these but also safety and environmental measures can be taken. Will be needed. In addition, it is also necessary to strictly control the conditions of corrosion treatment with acid or alkali, and if the glass phase of the ceramics sintered body is over-melted or over-melted, it causes a decrease in adhesiveness. This may cause a decrease in yield.
【0011】本発明は、かかる従来の事情に鑑み、セラ
ミックス焼結体の表面に密着性に優れたダイヤモンド又
はダイヤモンド状炭素の被膜を備えたセラミックス製摺
動部材を提供すること、及びかかるセラミックス製摺動
部材を簡単な方法で、生産性良く、且つ高い歩留りで形
成する方法を提供することを目的とする。In view of the above conventional circumstances, the present invention provides a ceramic sliding member having a coating of diamond or diamond-like carbon with excellent adhesion on the surface of a ceramic sintered body, and the ceramic sliding member. An object of the present invention is to provide a method for forming a sliding member by a simple method with high productivity and high yield.
【0012】[0012]
【課題を解決するための手段】上記目的を達成するた
め、本発明が提供するセラミックス製摺動部材は、窒化
ケイ素又はサイアロンを主成分とするセラミックス焼結
体の表面上に、ダイヤモンド又はダイヤモンド状炭素の
被膜を設けたセラミックス製摺動部材であって、該被膜
の設けられたセラミックス焼結体の表面から少なくとも
100μmの深さの領域内のCa濃度が、この領域より
内部におけるCa濃度よりも減少していることを特徴と
する。In order to achieve the above object, the ceramic sliding member provided by the present invention has a diamond or diamond-like structure on the surface of a ceramic sintered body containing silicon nitride or sialon as a main component. In a ceramic sliding member provided with a carbon coating, the Ca concentration in a region at a depth of at least 100 μm from the surface of the ceramic sintered body provided with the coating is higher than the Ca concentration in the inside of this region. It is characterized by decreasing.
【0013】本発明のセラミックス製摺動部材の製造方
法は、窒化ケイ素又はサイアロンを主成分とするセラミ
ックス焼結体を真空中において熱処理することにより、
セラミックス焼結体の表面から少なくとも100μmの
深さの領域内のCa成分を消失ないし減少させ後、その
表面にダイヤモンド又はダイヤモンド状炭素の被膜を形
成することを特徴とする。The method for producing a ceramic sliding member of the present invention comprises subjecting a ceramic sintered body containing silicon nitride or sialon as a main component to heat treatment in a vacuum,
The present invention is characterized in that a Ca or diamond-like carbon film is formed on the surface of the ceramic sintered body after the Ca component in the region at a depth of at least 100 μm is eliminated or reduced.
【0014】尚、ここで言うダイヤモンド状炭素とは、
非晶質でダイヤモンドと類似の特性を有する炭素を意味
し、英語ではDiamond−like carbon
と称するものである。The diamond-like carbon referred to here is
It means carbon that is amorphous and has properties similar to diamond. In English, diamond-like carbon.
Is called.
【0015】[0015]
【作用】本発明においては、窒化ケイ素又はサイアロン
を主成分とするセラミックス焼結体の原料である窒化ケ
イ素粉末に含まれる微量の不純物、特にカルシウム化合
物に着目し、焼結体表面ないしその近傍からカルシウム
化合物を消失ないし減少させることにより、セラミック
ス焼結体とダイヤモンド又はダイヤモンド状炭素の被膜
との密着性を向上させることができた。In the present invention, attention is paid to a slight amount of impurities, particularly calcium compounds, contained in the silicon nitride powder, which is the raw material of the ceramics sintered body containing silicon nitride or sialon as the main component, from the surface of the sintered body or its vicinity. By eliminating or reducing the calcium compound, it was possible to improve the adhesion between the ceramic sintered body and the diamond or diamond-like carbon coating.
【0016】即ち、窒化ケイ素(Si3N4)又はサイア
ロン(SiAlON)を主成分とするセラミックス焼結
体は、その目的とする用途に応じて、適切な粒径、純
度、α率、アスペクト比等を有する市販の窒化ケイ素粉
末を用い、これに焼結助剤を添加混合して焼結すること
により製造されるが、窒化ケイ素粉末にはSi3N4以外
に微量の不純物、例えば酸素、炭素、塩素、鉄、カルシ
ウム、アルミニウム等が含まれている。That is, the ceramic sintered body containing silicon nitride (Si 3 N 4 ) or sialon (SiAlON) as a main component has an appropriate particle size, purity, α ratio, and aspect ratio depending on the intended use. It is produced by using a commercially available silicon nitride powder having, for example, and adding and mixing a sintering aid to the powder, and the silicon nitride powder contains a small amount of impurities such as oxygen, in addition to Si 3 N 4 . It contains carbon, chlorine, iron, calcium, aluminum, etc.
【0017】これらの不純物は、窒化ケイ素粉末を作製
する際に使用する設備や治具等から混入するものであっ
たり、窒化ケイ素粉末を作製するための原料としての固
体や液体に既に含まれているものであって、これを全て
完全に無くすことは極めて困難である。These impurities are mixed in from equipment or jigs used for producing the silicon nitride powder, or are already contained in the solid or liquid as a raw material for producing the silicon nitride powder. However, it is extremely difficult to eliminate all of them.
【0018】従って、窒化ケイ素又はサイアロンを主成
分とするセラミックス焼結体は、これらの不純物を含ん
でおり、その表面及び内部についてX線解析を行うと、
いずれの箇所にもY20N4Si12O48とCa(Fe,M
g)Si2O6が形成されていることが判明した。又、こ
のセラミックス焼結体を真空中で熱処理すると、焼結体
内部にはこれらの化合物が残っているが、焼結体表面で
はY20N4Si12O48のみが残り、Ca(Fe,Mg)
Si2O6は消失することが分かった。Therefore, the ceramic sintered body containing silicon nitride or sialon as a main component contains these impurities, and when X-ray analysis is performed on the surface and the inside,
Y 20 N 4 Si 12 O 48 and Ca (Fe, M)
g) It was found that Si 2 O 6 was formed. When this ceramics sintered body is heat-treated in vacuum, these compounds remain inside the sintered body, but only Y 20 N 4 Si 12 O 48 remains on the surface of the sintered body, and Ca (Fe, Mg)
It was found that Si 2 O 6 disappeared.
【0019】そこで、予め真空中で熱処理したセラミッ
クス焼結体と、かかる熱処理を行わないセラミックス焼
結体について、それぞれ表面にダイヤモンド被膜及びダ
イヤモンド状炭素被膜を形成し、その密着性をピン−オ
ン−ディスク試験方法により評価したところ、予め真空
中で熱処理したセラミックス焼結体は熱処理無しの焼結
体に比べて約3倍の密着性を示した。Therefore, a diamond coating and a diamond-like carbon coating are formed on the surface of each of the ceramics sintered body that has been previously heat-treated in vacuum and the ceramics sintered body that is not heat-treated, and the adhesion is pin-on- When evaluated by the disk test method, the ceramics sintered body which had been previously heat-treated in vacuum showed about three times the adhesion as compared with the sintered body without heat treatment.
【0020】この理由は明らかではないが、以下のごと
く考えることができる。CaとMgは表1に示すよう
に、酸素との結合においてイオン結合性がSiよりも高
く、また結合力も弱い。従って、真空中で熱処理すると
セラミックス焼結体表面からイオン結合性の高いCaと
Mgが消失するため、焼結体表面近傍はイオン結合性が
弱くなり、共有結合性が高くなる。The reason for this is not clear, but it can be considered as follows. As shown in Table 1, Ca and Mg have a higher ionic bond property with respect to the bond with oxygen than Si, and also have a weak bond force. Therefore, when heat treatment is performed in a vacuum, Ca and Mg having high ionic bond properties disappear from the surface of the ceramics sintered body, so that the ionic bondability is weakened in the vicinity of the surface of the sintered body and the covalent bondability becomes high.
【0021】[0021]
【表1】元 素 イオン結合性(%) 単結合の強さ(kJ/mol) Si 37 444 Ca 62 134 Mg 55 155[Table 1] Element ion bondability (%) Single bond strength (kJ / mol) Si 37 444 Ca 62 134 Mg 55 155
【0022】又、ダイヤモンド及びダイヤモンド状炭素
は共にsp3混成軌道であり、共有結合性を示すことが
知られている。このために、共有結合性を示すダイヤモ
ンド又はダイヤモンド状炭素の被膜は、共有結合性の高
い焼結体表面にイオン結合性を示す焼結体表面よりも強
く結合することにより、密着性に優れた被膜の形成が可
能になったものと考えられる。It is known that both diamond and diamond-like carbon are sp 3 hybrid orbits and exhibit covalent bondability. Therefore, the coating film of diamond or diamond-like carbon exhibiting a covalent bond is excellent in adhesiveness because it is bonded to the surface of a sintered product having a high covalent bond more strongly than the surface of a sintered product having an ionic bond. It is considered that the formation of the coating has become possible.
【0023】尚、窒化ケイ素又はサイアロンを主成分と
する焼結体に真空中で熱処理を施した後、焼結体中のY
20N4Si12O48とCa(Fe,Mg)Si2O6の元素
分析の評価と、ダイヤモンド又はダイヤモンド状炭素の
被膜の密着性をピン−オン−ディスク試験法で評価した
結果、真空中で熱処理した場合の密着性が熱処理しない
場合の密着性よりも優れているためには、Ca(Fe,
Mg)Si2O6の濃度分布、即ちCa成分の濃度分布が
焼結体の表面から少なくとも100μmの深さの領域か
ら減少している必要があることが分かった。The sintered body containing silicon nitride or sialon as a main component is heat-treated in vacuum, and then Y in the sintered body is used.
The elemental analysis of 20 N 4 Si 12 O 48 and Ca (Fe, Mg) Si 2 O 6 and the adhesion of diamond or diamond-like carbon coating were evaluated by the pin-on-disk test method. In order that the adhesiveness when heat-treated at 10 is superior to the adhesiveness when not heat-treated, Ca (Fe,
It was found that the concentration distribution of Mg) Si 2 O 6 , that is, the concentration distribution of the Ca component, needs to be reduced from the region at least 100 μm deep from the surface of the sintered body.
【0024】かかるCa成分の消失ないし減少に基づく
ダイヤモンド又はダイヤモンド状被膜の密着性の向上を
得るための真空中での熱処理は、好ましくは10-3Pa
以下の真空中で行う。熱処理時の雰囲気が10-3Paを
越える圧力の場合には、焼結体表面に酸化膜が形成さ
れ、熱処理によってもCaやMg成分が焼結体表面から
散逸することが困難になるため、本発明の効果が期待で
きなくなる。The heat treatment in vacuum for obtaining the improved adhesion of the diamond or diamond-like coating due to the disappearance or reduction of the Ca component is preferably 10 -3 Pa.
Perform in the following vacuum. If the atmosphere during the heat treatment exceeds 10 -3 Pa, an oxide film is formed on the surface of the sintered body, and it becomes difficult for the Ca and Mg components to dissipate from the surface of the sintered body even by the heat treatment. The effect of the present invention cannot be expected.
【0025】真空中での熱処理の条件は1100〜14
00℃の温度で2〜6時間行うことが好ましい。この条
件が1100℃未満の温度又は2時間未満の熱処理時間
では焼結体表面が効果的に改質されず、ダイヤモンド又
はダイヤモンド状炭素被膜の密着性が十分向上しない。
逆に、1400℃を越える温度又は6時間を越える熱処
理時間では、窒化ケイ素が昇華する恐れがあるからであ
る。The conditions of heat treatment in vacuum are 1100 to 14
It is preferable to carry out at a temperature of 00 ° C. for 2 to 6 hours. If the conditions are a temperature of less than 1100 ° C. or a heat treatment time of less than 2 hours, the surface of the sintered body is not effectively modified and the adhesion of the diamond or diamond-like carbon coating is not sufficiently improved.
On the contrary, if the temperature exceeds 1400 ° C. or the heat treatment time exceeds 6 hours, silicon nitride may be sublimated.
【0026】又、この真空中での熱処理を施すことによ
り、窒化ケイ素又はサイアロンを主成分とする焼結体の
粒界相を結晶化させることが可能であり、その場合には
必要に応じて熱処理の温度と時間のパターンを調整すれ
ば良い。この熱処理による粒界相の結晶化によって、焼
結体の高温での強度が向上する。Further, by performing the heat treatment in vacuum, it is possible to crystallize the grain boundary phase of the sintered body containing silicon nitride or sialon as a main component, and in that case, if necessary, The heat treatment temperature and time pattern may be adjusted. Crystallization of the grain boundary phase by this heat treatment improves the strength of the sintered body at high temperatures.
【0027】かかる本発明において、セラミックス焼結
体は窒化ケイ素又はサイアロンを主成分とするセラミッ
クスであり、他のセラミックス成分、例えば炭化ケイ素
(SiC)、ジルコニア(ZrO2)、炭化チタン(T
iC)、炭化ハフニウム(HfC)等が含まれていても
構わない。又、炭化ケイ素ウイスカー、窒化ケイ素ウイ
スカー、カーボンウイスカー等のウイスカーを含むもの
であっても良い。In the present invention, the ceramic sintered body is a ceramic containing silicon nitride or sialon as a main component, and other ceramic components such as silicon carbide (SiC), zirconia (ZrO 2 ) and titanium carbide (T
iC), hafnium carbide (HfC), etc. may be contained. It may also include whiskers such as silicon carbide whiskers, silicon nitride whiskers, and carbon whiskers.
【0028】窒化ケイ素又はサイアロンを主成分とする
セラミックス焼結体の粉末原料には前記のごとく不純物
が含まれ、その含有量は直接窒化法やイミド分解法等の
窒化ケイ素粉末の製造方法又は粉末の精錬方法等によっ
て異なる。特にCaの含有量ついては、市販の窒化ケイ
素粉末で0.5ppm〜2重量%程度であるが、本発明
の効果を達成するためには不純物のCa含有量が1pp
m〜1重量%の範囲にあることが好ましい。焼結体中の
Ca含有量が1ppm以上である場合に本発明の真空中
熱処理による被膜の密着性向上効果が顕著になり、1重
量%を越えると摺動部材として十分緻密な焼結体が得ら
れなくなるからである。The powder raw material of the ceramics sintered body containing silicon nitride or sialon as a main component contains impurities as described above, and the content thereof is the method for producing the silicon nitride powder by the direct nitriding method or the imide decomposition method or the powder. It depends on the refining method of. In particular, the content of Ca is about 0.5 ppm to 2% by weight in a commercially available silicon nitride powder, but in order to achieve the effect of the present invention, the content of Ca as an impurity is 1 pp.
It is preferably in the range of m to 1% by weight. When the Ca content in the sintered body is 1 ppm or more, the effect of improving the adhesion of the coating by the vacuum heat treatment of the present invention becomes remarkable, and when it exceeds 1% by weight, a sintered body sufficiently dense as a sliding member is obtained. Because you will not be able to get it.
【0029】窒化ケイ素又はサイアロンを主成分とする
セラミックス焼結体の製造には、窒化ケイ素粉末に焼結
助剤を添加して焼結するが、本発明のセラミックス焼結
体がその焼結助剤を含有し得ることは当然である。かか
る焼結助剤としては、例えば酸化イットリウム(Y
2O3)、酸化アルミニウム(Al2O3)、窒化アルミニ
ウム(AlN)、酸化ジルコニウム(Zr2O3)、酸化
マグネシウム(MgO)、酸化エルビウム(Er
2O3)、酸化ジスプロシウム(Dy2O3)、酸化チタン
(TiO2)、酸化ケイ素(SiO2)、酸化イッテルビ
ウム(Yb2O3)等を挙げることができる。In the production of a ceramic sintered body containing silicon nitride or sialon as a main component, a sintering aid is added to silicon nitride powder for sintering. It goes without saying that an agent can be contained. Examples of such a sintering aid include yttrium oxide (Y
2 O 3 ), aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), zirconium oxide (Zr 2 O 3 ), magnesium oxide (MgO), erbium oxide (Er)
2 O 3 ), dysprosium oxide (Dy 2 O 3 ), titanium oxide (TiO 2 ), silicon oxide (SiO 2 ), ytterbium oxide (Yb 2 O 3 ), and the like.
【0030】セラミックス焼結体の大きさは限定され
ず、形状についても円柱状、棒状、中空状、細孔部を有
する形状、その他いかなる複雑な形状を有するものでも
良い。かかるセラミックス焼結体は、被膜の形成に先立
って、使用目的に応じて研磨、ラッピング処理等を施す
こともできる。The size of the ceramics sintered body is not limited, and may be cylindrical, rod-shaped, hollow, having pores, or any other complicated shape. Such a ceramics sintered body may be subjected to polishing, lapping, etc., depending on the purpose of use, prior to forming the coating film.
【0031】上記真空中での熱処理を施した窒化ケイ素
又はサイアロンを主成分とするセラミックス焼結体の表
面上に、ダイヤモンド又はダイヤモンド状炭素の被膜を
形成するには、公知のあらゆる方法を使用できるが、な
かでも各種CVD法、燃焼炎法、イオンプレーティング
法、スパッタリング法等の気相合成法を用いることが実
用上及び生産上において好ましい。Any known method can be used to form a coating film of diamond or diamond-like carbon on the surface of the ceramics sintered body containing silicon nitride or sialon as the main component, which has been heat-treated in vacuum. However, it is preferable from the practical and production viewpoints to use various vapor phase synthesis methods such as the CVD method, the combustion flame method, the ion plating method, and the sputtering method.
【0032】具体的には、気相合成法は炭素源ガスを含
む原料ガスを反応室内で励起させ、焼結体上にダイヤモ
ンド又はダイヤモンド状炭素の被膜を形成させる。炭素
源ガスとしては、各種炭化水素のほか、窒素、ハロゲ
ン、酸素等を含む炭素化合物、あるいはこれらの混合物
を用い、必要に応じて水素、アルゴン、ヘリウム等と混
合して使用する。原料ガスの励起方法としては、RFプ
ラズマCVD法、DCプラズマCVD法、マイクロ波プ
ラズマCVD法、熱フィラメントCVD法、熱CVD
法、プラズマフラッシュ法、熱プラズマ法がある。Specifically, in the vapor phase synthesis method, a raw material gas containing a carbon source gas is excited in a reaction chamber to form a diamond or diamond-like carbon film on the sintered body. As the carbon source gas, in addition to various hydrocarbons, carbon compounds containing nitrogen, halogen, oxygen and the like, or a mixture thereof are used, and if necessary, mixed with hydrogen, argon, helium and the like. Excitation methods of the source gas include RF plasma CVD method, DC plasma CVD method, microwave plasma CVD method, hot filament CVD method, and thermal CVD method.
Method, plasma flash method, and thermal plasma method.
【0033】[0033]
【実施例】実施例1 下記表2に示す粒径(中央値であるメジアン径)と不純
物含有量をもつ市販のSi3N4粉末を使用し、これに平
均粒径1.1μmのY2O3粉末5重量%と平均粒径0.6
μmのAl2O3粉末3重量%を添加し、エタノール中で
100時間ボールミルによる湿式混合を行った。 Example 1 A commercially available Si 3 N 4 powder having a particle size (median size as a median value) and an impurity content shown in Table 2 below was used, and Y 2 having an average particle size of 1.1 μm was used. O 3 powder 5% by weight and average particle size 0.6
3% by weight of Al 2 O 3 powder having a particle diameter of μm was added, and wet mixing was performed in ethanol by a ball mill for 100 hours.
【0034】[0034]
【表2】 窒化ケイ素粉末の性状 メジアン径 不 純 物 含 有 量 (μm) Al O C Ca Fe Cl Mg 0.9 20ppm 1.2wt% 0.1wt% 0.2wt% 20ppm 15ppm 0.01wt%TABLE 2 Properties median size not pure product free chromatic amount of silicon nitride powder (μm) Al O C Ca Fe Cl Mg 0.9 20ppm 1.2wt% 0.1wt% 0.2wt% 20ppm 15ppm 0.01wt%
【0035】この混合粉末を乾燥した後、5000kg
/cm2の圧力でCIP成形した。得られた成形体を1
気圧の窒素ガス雰囲気中にて1600℃で4時間加熱保
持し、次に1700℃で6時間の焼結を行い、得られた
焼結体に1700℃、500気圧の窒素ガス雰囲気中に
て2時間のHIP処理を施した。After drying this mixed powder, 5000 kg
CIP molding was performed at a pressure of / cm 2 . 1 for the obtained molded body
It is heated and held at 1600 ° C. for 4 hours in a nitrogen gas atmosphere of atmospheric pressure, and then sintered at 1700 ° C. for 6 hours, and the obtained sintered body is heated at 1700 ° C. in a nitrogen gas atmosphere of 500 atmospheric pressure for 2 hours. HIP treatment for hours was applied.
【0036】かくして得られた窒化ケイ素焼結体をラッ
ピング処理した後、真空熱処理炉内に配置した。次に、
炉内を10-3Paに真空排気し、試験片を1300℃に
3.5時間保持する真空熱処理を施した。この真空熱処
理を施した焼結体の表面に、RFプラズマCVD法を用
いて厚さ1.1μmのダイヤモンド状炭素被膜を形成
し、試験片1とした。ダイヤモンド状炭素皮膜の成膜条
件は、原料ガスとしてメタンガスを用い、圧力0.5T
orrで、出力電力800Wとした。The silicon nitride sintered body thus obtained was lapped and then placed in a vacuum heat treatment furnace. next,
The inside of the furnace was evacuated to 10 -3 Pa, and the test piece was subjected to vacuum heat treatment at 1300 ° C for 3.5 hours. A test piece 1 was prepared by forming a diamond-like carbon coating film having a thickness of 1.1 μm on the surface of the sintered body subjected to the vacuum heat treatment by using the RF plasma CVD method. The conditions for forming the diamond-like carbon film are methane gas as a raw material gas and a pressure of 0.5T.
The output power was 800 W at orr.
【0037】又、比較のために、上記と同様に製造した
窒化ケイ素焼結体をラッピング処理した後、真空中で熱
処理する代わりに窒素雰囲気中で熱処理を行いダイヤモ
ンド状炭素被膜を形成した比較試験片1aと、真空熱処
理を行わず、同じ条件でダイヤモンド状炭素被膜を形成
した比較試験片1bと、ラッピング処理のみ行い、ダイ
ヤモンド状炭素被膜を有しない比較試験片1cとを作製
した。尚、窒素雰囲気中での熱処理条件は、真空中の場
合と同じ1300℃で5時間とし、大気圧で処理を行っ
た。For comparison, a comparative test in which a diamond-like carbon film was formed by lapping a silicon nitride sintered body produced in the same manner as above and then heat treating in a nitrogen atmosphere instead of heat treating in vacuum A piece 1a, a comparative test piece 1b having a diamond-like carbon coating formed under the same conditions without vacuum heat treatment, and a comparative test piece 1c having no diamond-like carbon coating by lapping were prepared. The heat treatment conditions in the nitrogen atmosphere were the same as in the vacuum at 1300 ° C. for 5 hours, and the treatment was carried out at atmospheric pressure.
【0038】これらの試験片1及び比較試験片1a、1
b、1cを用いて、ピン−オン−ディスク試験方法に従
い、荷重20N、摺動速度150mm/秒、摺動回数5
0000回の条件で摺動試験を行った。その結果、摩擦
係数は、ダイヤモンド状炭素被膜のない比較試験片1c
では0.9であったが、本発明の試験片1、窒素雰囲気
中で熱処理した試験片1a、及び熱処理を行わずにダイ
ヤモンド状炭素被膜を形成した比較試験片1bは共に
0.2であった。These test pieces 1 and comparative test pieces 1a, 1
b, 1c according to the pin-on-disk test method, load 20 N, sliding speed 150 mm / sec, sliding number 5
A sliding test was conducted under the condition of 0000 times. As a result, the friction coefficient was determined by comparing the comparative test piece 1c without the diamond-like carbon coating.
However, the test piece 1 of the present invention, the test piece 1a heat-treated in a nitrogen atmosphere, and the comparative test piece 1b having a diamond-like carbon coating formed without heat treatment were both 0.2. It was
【0039】ところが、摩耗深さをみると、比較試験片
1cが8μm、比較試験片1a及び1bが3μmである
のに対して、本発明の試験片1では0.8μmと遥かに
少なかった。又、窒素雰囲気中で熱処理した後に被膜形
成した比較試験片1a、熱処理なしに被膜形成した比較
試験片1bでは、ダイヤモンド状炭素被膜の剥離が認め
られたが、本発明の試験片1には被膜の剥離は認められ
なかった。これらの結果から、真空熱処理の後にダイヤ
モンド状炭素被膜を形成した本発明の試験片1では、被
膜の密着性が著しく向上することが判明した。However, the wear depth was 8 μm for the comparative test piece 1c and 3 μm for the comparative test pieces 1a and 1b, whereas it was 0.8 μm for the test piece 1 of the present invention. Further, although the peeling of the diamond-like carbon coating was observed in the comparative test piece 1a formed with a film after heat treatment in a nitrogen atmosphere and the comparative test piece 1b formed with a film without heat treatment, the test piece 1 of the present invention showed a peeling. No peeling was observed. From these results, it was found that in the test piece 1 of the present invention in which the diamond-like carbon coating was formed after the vacuum heat treatment, the coating adhesion was remarkably improved.
【0040】一方、上記と同じ窒化ケイ素焼結体であっ
て、本発明に従って真空中で熱処理を施した焼結体と、
窒素雰囲気中で熱処理を施した焼結体及び熱処理を施し
ていない焼結体について、X線マイクロアナライザー
(EPMA)を用いて粒界相中の元素分布を深さ方向に
ついて調べ、結果を図1に示した。図1は、焼結体表面
から深さ方向におけるY20N4Si12O48とCa(F
e,Mg)Si2O6の分布を示すグラフであり、縦軸は
真空熱処理を施した焼結体における表面でのY20N4S
i12O48の含有量を100とした相対目盛で表示してあ
る。On the other hand, the same silicon nitride sintered body as above, which has been heat-treated in vacuum according to the present invention,
Using an X-ray microanalyzer (EPMA), the element distribution in the grain boundary phase was investigated in the depth direction for the sintered body that was heat-treated in the nitrogen atmosphere and the sintered body that was not heat-treated, and the results are shown in FIG. It was shown to. Fig. 1 shows Y 20 N 4 Si 12 O 48 and Ca (F
3 is a graph showing the distribution of (e, Mg) Si 2 O 6 , where the vertical axis represents Y 20 N 4 S on the surface of the sintered body that has been subjected to vacuum heat treatment.
It is displayed on a relative scale with the content of i 12 O 48 as 100.
【0041】図1から分かるように、窒素雰囲気中で熱
処理を施した焼結体及び熱処理を施していない焼結体
は、Y20N4Si12O48及びCa(Fe,Mg)Si2O
6が共に深さ方向に対して一定の分布になっており、窒
素雰囲気中での熱処理が効果がないことが判明した。こ
れに対して、真空中で熱処理を施した焼結体では、内部
には両方の化合物が存在しているものの、Ca(Fe,
Mg)Si2O6は表面から約400μmの深さから表面
に向かって徐々に減少を始め、表面では全く検出されな
かった。As can be seen from FIG. 1, the sintered body which was heat-treated in the nitrogen atmosphere and the sintered body which was not heat-treated were Y 20 N 4 Si 12 O 48 and Ca (Fe, Mg) Si 2 O.
Both 6 have a uniform distribution in the depth direction, and it was found that heat treatment in a nitrogen atmosphere had no effect. On the other hand, in the sintered body that has been heat-treated in vacuum, both compounds are present inside, but Ca (Fe,
Mg) Si 2 O 6 started to decrease gradually from the surface to a depth of about 400 μm and was not detected at all on the surface.
【0042】又、実施例1と同じ焼結体からなる抗折試
験片を用いて、上記と同じ条件で真空中での熱処理又は
窒素雰囲気中での熱処理を行い、これらの試験片と熱処
理を行っていない試験片にラッピング処理後同じ条件で
プラズマCVD法により1.1μmのダイヤモンド状炭
素被膜を形成した。Using a bending test piece made of the same sintered body as in Example 1, heat treatment in vacuum or heat treatment in a nitrogen atmosphere was performed under the same conditions as described above, and the heat treatment was performed with these test pieces. A diamond-like carbon film having a thickness of 1.1 μm was formed by the plasma CVD method under the same conditions after lapping treatment on the test piece which was not subjected.
【0043】これらのダイヤモンド状被膜を設けた各試
験片を用いて、常温、600℃、800℃、900℃、
1000℃、1100℃、1200℃、1300℃での
抗折力を測定した。その結果を図2に示す。この結果か
ら分かるように、真空中での熱処理を行った試験片は高
温においても最も抗折力の劣化が小さく、窒素雰囲気中
での熱処理を行った試験片は熱処理を施してないものと
余り変わらない温度依存性を示した。Using each test piece provided with these diamond-like coatings, at room temperature, 600 ° C., 800 ° C., 900 ° C.,
The transverse rupture strength at 1000 ° C, 1100 ° C, 1200 ° C and 1300 ° C was measured. The result is shown in FIG. As can be seen from these results, the test piece that was heat-treated in vacuum showed the smallest deterioration of the transverse rupture strength even at high temperature, and the test piece that was heat-treated in the nitrogen atmosphere was not heat-treated. It showed the same temperature dependence.
【0044】更に、これら各試験片の結晶構造回折を調
べると、真空中での熱処理を行った試験片には窒化ケイ
素のパターン以外に結晶質の粒界相に起因するピークが
現れているが、窒素雰囲気中で熱処理した試験片では窒
化ケイ素のパターン以外は僅かしか結晶質の粒界相によ
るピークが現れていなかった。又、熱処理を行っていな
い試験片では窒化ケイ素のピークのみが検出された。こ
れらの結果より、真空中で熱処理を行うことにより、ダ
イヤモンド状炭素被膜の密着性が向上するばかりでな
く、粒界相の結晶化により高温特性をも向上させること
ができる。Furthermore, when the crystal structure diffraction of each of these test pieces was examined, peaks due to the crystalline grain boundary phase appeared in addition to the silicon nitride pattern in the test pieces subjected to the heat treatment in vacuum. In the test piece heat-treated in a nitrogen atmosphere, only a few peaks due to the crystalline grain boundary phase appeared except for the pattern of silicon nitride. Moreover, only the peak of silicon nitride was detected in the test piece that was not heat-treated. From these results, heat treatment in vacuum not only improves the adhesion of the diamond-like carbon coating, but also improves the high temperature characteristics due to the crystallization of the grain boundary phase.
【0045】実施例2 下記表3に示す粒径(中央値であるメジアン径)と不純
物含有量をもつ市販のSi3N4粉末を使用し、これに平
均粒径0.8μmのEr2O3粉末6重量%、平均粒径1.
1μmのAlN粉末3重量%、短径0.4〜2μmで長
さ5〜50μmのSiCウイスカー10重量%を添加
し、実施例1と同様に湿式混合し、乾燥した。 Example 2 A commercially available Si 3 N 4 powder having a particle size (median size as a median value) and an impurity content shown in Table 3 below was used, and Er 2 O having an average particle size of 0.8 μm was used. 3 powder 6% by weight, average particle size 1.
3% by weight of 1 μm AlN powder and 10% by weight of SiC whiskers having a short diameter of 0.4 to 2 μm and a length of 5 to 50 μm were added, wet-mixed and dried as in Example 1.
【0046】[0046]
【表3】 窒化ケイ素粉末の性状 メジアン径 不 純 物 含 有 量 (μm) Al O C Ca Fe Cl Mg 1.5 30ppm 2.1wt% 0.1wt% 0.6wt% 60ppm 29ppm 0.01wt%TABLE 3 Properties median diameter not pure product free chromatic amount of silicon nitride powder (μm) Al O C Ca Fe Cl Mg 1.5 30ppm 2.1wt% 0.1wt% 0.6wt% 60ppm 29ppm 0.01wt%
【0047】この混合粉末を200気圧、1750℃、
2時間の条件でホットプレス焼結を行い、窒化ケイ素焼
結体を製造した。かくして得られた窒化ケイ素焼結体を
ラッピング処理した後、真空熱処理炉内に配置し、炉内
を10-4Paに真空排気して1400℃で2.5時間の
真空熱処理を行った。This mixed powder was heated to 200 atm and 1750 ° C.
Hot press sintering was performed for 2 hours to produce a silicon nitride sintered body. The silicon nitride sintered body thus obtained was lapped, then placed in a vacuum heat treatment furnace, the furnace was evacuated to 10 −4 Pa, and vacuum heat treatment was performed at 1400 ° C. for 2.5 hours.
【0048】この真空熱処理を施した焼結体の表面に、
RFプラズマCVD法を用いて厚さ0.6μmのダイヤ
モンド状炭素被膜を形成し、本発明の試験片2とした。
このダイヤモンド状炭素被膜の成膜条件は、原料ガスと
してメタンガスを用い、圧力0.8Torrで、出力電
力600Wとした。On the surface of the sintered body subjected to the vacuum heat treatment,
A diamond-like carbon coating film having a thickness of 0.6 μm was formed by using the RF plasma CVD method to obtain a test piece 2 of the present invention.
The conditions for forming this diamond-like carbon film were such that methane gas was used as a raw material gas, the pressure was 0.8 Torr, and the output power was 600 W.
【0049】又、比較のために、上記と同様に製造した
窒化ケイ素焼結体をラッピング処理した後、真空熱処理
を行わず、同じ条件でダイヤモンド状炭素被膜を形成し
た比較試験片2aと、ラッピング処理のみ行い、ダイヤ
モンド状炭素被膜を形成しない比較試験片2bとを作製
した。For comparison, after lapping the silicon nitride sintered body manufactured in the same manner as described above, a comparative test piece 2a having a diamond-like carbon coating formed under the same conditions without vacuum heat treatment was used. A comparative test piece 2b was prepared by performing only the treatment and forming no diamond-like carbon coating.
【0050】これらの試験片2及び比較試験片2a、2
bを用いて、実施例1と同様の条件で摺動試験を行っ
た。その結果、摩擦係数は、ダイヤモンド状炭素被膜の
ない比較試験片2bでは1.3であったが、本発明の試
験片2及び真空熱処理を行わずに被膜形成した比較試験
片2aは共に0.2であった。These test pieces 2 and comparative test pieces 2a, 2
Using b, a sliding test was conducted under the same conditions as in Example 1. As a result, the coefficient of friction was 1.3 for the comparative test piece 2b without the diamond-like carbon coating, but was 0.2 for both the test piece 2 of the present invention and the comparative test piece 2a formed with no vacuum heat treatment. It was 2.
【0051】ところが、摩耗深さをみると、比較試験片
2bが9μm、比較試験片2aが2μmであるのに対し
て、本発明の試験片2は0.4μmと遥かに少なく、し
かも真空熱処理なしに被膜形成した比較試験片2aでは
ダイヤモンド状炭素被膜の剥離が認められたが、本発明
の試験片2には被膜の剥離は認められなかった。これら
の結果から、真空熱処理の後にダイヤモンド状炭素被膜
を形成した本発明の試験片2では、被膜の密着性が著し
く向上していることが判明した。However, the wear depth was 9 μm for the comparative test piece 2b and 2 μm for the comparative test piece 2a, whereas the test piece 2 of the present invention was much less at 0.4 μm, and the vacuum heat treatment was performed. Although the peeling of the diamond-like carbon coating was observed in the comparative test piece 2a having the coating formed without it, the peeling of the coating was not observed in the test piece 2 of the present invention. From these results, it was found that in the test piece 2 of the present invention in which the diamond-like carbon coating was formed after the vacuum heat treatment, the coating adhesion was remarkably improved.
【0052】実施例3 実施例2と同様にして製造した窒化ケイ素焼結体を研削
加工した後、真空熱処理炉内に配置し、炉内を10-4P
aに真空排気して1200℃で4時間の真空熱処理を行
った。この真空熱処理を施した焼結体の表面に、RFプ
ラズマCVD法を用いて厚さ5μmのダイヤモンド被膜
を形成し、ピン−オン−ディスク試験片3aを作製し
た。又、比較のために、上記と同様に製造した窒化ケイ
素焼結体を研削加工した後、真空熱処理を行わずに、同
じ条件でダイヤモンド被膜を形成した比較試験片3bを
作製した。 Example 3 A silicon nitride sintered body produced in the same manner as in Example 2 was ground and then placed in a vacuum heat treatment furnace, and the inside of the furnace was heated to 10 −4 P.
It was evacuated to a and subjected to vacuum heat treatment at 1200 ° C. for 4 hours. A pin-on-disk test piece 3a was prepared by forming a diamond coating having a thickness of 5 μm on the surface of the sintered body subjected to the vacuum heat treatment by using the RF plasma CVD method. For comparison, a comparative test piece 3b having a diamond coating formed under the same conditions was prepared by grinding the silicon nitride sintered body produced as described above and then performing no vacuum heat treatment.
【0053】これらの試験片3a、3bを用いて、実施
例1及び2と同様の摺動試験を行った。その結果、本発
明による試験片3aではダイヤモンド被膜の剥離が認め
られなかったが、比較試験片3bでは大きな剥離が見ら
れた。この結果から、真空熱処理の後にダイヤモンド被
膜を形成した本発明の試験片3aでは、被膜の密着性が
向上していることが分かった。Using these test pieces 3a and 3b, sliding tests similar to those in Examples 1 and 2 were conducted. As a result, no peeling of the diamond coating was observed in the test piece 3a according to the present invention, but large peeling was observed in the comparative test piece 3b. From these results, it was found that in the test piece 3a of the present invention in which the diamond coating was formed after the vacuum heat treatment, the coating adhesion was improved.
【0054】又、これらの試験片3a、3bについて、
焼結体の表面から深さ方向におけるY20N4Si12O48
とCa(Fe,Mg)Si2O6の分布を、実施例1と同
様にして測定した。その結果、本発明の試験片3aの内
部には両方の化合物が存在しているものの、Ca(F
e,Mg)Si2O6は表面から約350μmの深さから
表面に向かって徐々に減少を始め、表面では全く検出さ
れなかった。一方、比較試験片3bでは、両方の化合物
共に深さ方向に対して一定の分布になっていることが判
明した。Further, regarding these test pieces 3a and 3b,
Y 20 N 4 Si 12 O 48 in the depth direction from the surface of the sintered body
And Ca (Fe, Mg) Si 2 O 6 distributions were measured as in Example 1. As a result, although both compounds were present inside the test piece 3a of the present invention, Ca (F
e, Mg) Si 2 O 6 started to decrease gradually from the surface to a depth of about 350 μm and was not detected at all on the surface. On the other hand, in the comparative test piece 3b, both compounds were found to have a constant distribution in the depth direction.
【0055】実施例4 下記表4に示す粒径(中央値であるメジアン径)と不純
物含有量をもつ2種類の市販のSi3N4粉末を使用し、
各々のSi3N4粉末に平均粒径0.8μmのAl2O3粉
末4重量%、平均粒径1.0μmのAlN粉末4重量
%、平均粒径0.8μmのY2O3粉末3重量%を添加し
て、エタノール中で100時間ボールミルによる湿式混
合を行った。 Example 4 Two kinds of commercially available Si 3 N 4 powders having the particle size (median size as the median value) and the impurity content shown in Table 4 below were used,
4% by weight of Al 2 O 3 powder having an average particle size of 0.8 μm, 4% by weight of AlN powder having an average particle size of 1.0 μm, and Y 2 O 3 powder 3 having an average particle size of 0.8 μm were added to each Si 3 N 4 powder. Weight% was added and wet mixing was performed in ethanol for 100 hours with a ball mill.
【0056】[0056]
【表4】 窒化ケイ素粉末の性状 粉末 メジアン径 不 純 物 含 有 量 種類 (μm) Al O C Ca Fe Cl Mg A 0.7 30ppm 2.5wt% 0.1wt% 0.1wt% 50ppm 18ppm 0.01wt% B 0.7 28ppm 2.6wt% 0.13wt% 1.5wt% 47ppm 18ppm 0.01wt%TABLE 4 Characteristics powder median diameter not pure product free chromatic amount kinds of silicon nitride powder (μm) Al O C Ca Fe Cl Mg A 0.7 30ppm 2.5wt% 0.1wt% 0.1wt% 50ppm 18ppm 0.01wt% B 0.7 28ppm 2.6 wt% 0.13wt% 1.5wt% 47ppm 18ppm 0.01wt%
【0057】この混合粉末を乾燥した後、5000kg
/cm2の圧力でCIP成形した。得られた成形体を1
気圧の窒素ガス雰囲気中にて1600℃で4時間加熱保
持し、次に1800℃で5時間の焼結を行い、得られた
焼結体に1750℃、1000気圧の窒素ガス雰囲気中
にて2時間のHIP処理を施した。After drying this mixed powder, 5000 kg
CIP molding was performed at a pressure of / cm 2 . 1 for the obtained molded body
It is heated and held at 1600 ° C. for 4 hours in a nitrogen gas atmosphere at atmospheric pressure, and then sintered at 1800 ° C. for 5 hours, and the obtained sintered body is heated at 1750 ° C. in a nitrogen gas atmosphere at 1000 atmospheric pressure for 2 hours. HIP treatment for hours was applied.
【0058】かくして得られた各窒化ケイ素焼結体の組
織観察及び密度を測定すると、粉末Aを用いた焼結体は
欠陥が無く、密度は3.24g/cm3であり十分緻密化
していることが分かった。しかし、粉末Bを用いた焼結
体は表面や内部にポア等の欠陥が多く、密度も3.11
g/cm3と十分緻密化していなかった。When the structure of each of the silicon nitride sintered bodies thus obtained was observed and the density was measured, the sintered body using the powder A had no defects and had a density of 3.24 g / cm 3 and was sufficiently densified. I found out. However, the sintered body using the powder B has many defects such as pores on the surface and inside and has a density of 3.11.
It was not fully densified with g / cm 3 .
【0059】次に、この粉末Aを用いて製造した焼結体
をピン−オン−ディスク試験用に加工し、ラッピング処
理した後、真空熱処理炉内に配置して炉内を10-3Pa
に真空排気し、試験片を1150℃にて下記表5に示す
時間条件で保持することにより、真空熱処理を施した。
この場合、条件5の1150℃で8時間の真空熱処理を
行った試験片は、表面付近の窒化ケイ素が昇華してお
り、熱処理前の試験片の形状を保持していなかった。Next, the sintered body produced by using this powder A was processed for a pin-on-disk test, lapped, and then placed in a vacuum heat treatment furnace so that the inside of the furnace was 10 -3 Pa.
Vacuum evacuation was performed and the test piece was held at 1150 ° C. for the time conditions shown in Table 5 below to perform vacuum heat treatment.
In this case, in the test piece subjected to the vacuum heat treatment at 1150 ° C. for 8 hours under the condition 5, the silicon nitride near the surface was sublimated, and the shape of the test piece before the heat treatment was not retained.
【0060】条件1から条件4までの真空熱処理を施し
た試験片の表面に、RFプラズマCVD法を用いて厚さ
1.5μmのダイヤモンド状炭素被膜を形成した。これ
らの試験片を実施例1と同様の条件でピン−オン−ディ
スク試験を行い、その摩擦係数及び摩耗深さを評価した
結果を表5に併せて示した。又、これらの試験片を試験
面に垂直に切断し、試験面からの深さ方向に対するCa
成分の濃度変化をEPMAにより測定し、その結果を図
3に示すと共に、Ca濃度が低下する起点の表面からの
深さを求めて表5に示した。A diamond-like carbon coating having a thickness of 1.5 μm was formed on the surface of the test piece which had been subjected to the vacuum heat treatment under the conditions 1 to 4 by the RF plasma CVD method. These test pieces were subjected to a pin-on-disk test under the same conditions as in Example 1, and the results of evaluating the friction coefficient and the wear depth thereof are also shown in Table 5. In addition, these test pieces were cut perpendicularly to the test surface, and Ca in the depth direction from the test surface was cut.
The changes in the concentrations of the components were measured by EPMA, and the results are shown in FIG. 3, and the depth from the surface of the starting point where the Ca concentration is lowered was obtained and shown in Table 5.
【0061】[0061]
【表5】 条件1 条件2 条件3 条件4 条件5 保持時間(H) 0.5 1.0 2.0 5.0 8.0 摩 擦 係 数 0.9 0.8 0.3 0.2 − 摩耗深さ(μm) 2.7 2.6 0.8 0.8 − 被 膜 の 状 態 剥離 剥離 剥離無し 剥離無し − Ca濃度低下起点(μm) 30 80 110 340 − (注)条件5では表面付近の窒化ケイ素が昇華した。[Table 5] Condition 1 Condition 2 Condition 3 Condition 4 Condition 5 Holding time (H) 0.5 1.0 2.0 5.0 8.0 Abrasion coefficient 0.9 0.8 0.3 0.2 − Abrasion depth (μm) 2.7 2.6 0.8 0.8 − Delamination of film Exfoliation No exfoliation No exfoliation-Ca concentration lowering point (μm) 30 80 110 340- (Note) Under condition 5, silicon nitride near the surface sublimated.
【0062】これらの結果から、条件1及び2のように
焼結体表面より100μm以上深い箇所からCa濃度が
低下していない場合には、ダイヤモンド状炭素被膜が剥
離しているのに対して、条件3及び4のように焼結体表
面より100μm以上深い箇所からCa濃度が低下して
いる場合は、ダイヤモンド状被膜の剥離が生じず、被膜
の密着性が向上していること、及び摩耗深さも条件1及
び2に比べて小さくなっていることが分かる。From these results, the diamond-like carbon coating is peeled off when the Ca concentration is not lowered from the place 100 μm or more deeper than the surface of the sintered body as in the conditions 1 and 2, whereas the diamond-like carbon coating is peeled off. When the Ca concentration is lower than 100 μm or more deeper than the surface of the sintered body as in the conditions 3 and 4, peeling of the diamond-like coating does not occur, the adhesion of the coating is improved, and the wear depth It can also be seen that it is smaller than the conditions 1 and 2.
【0063】[0063]
【発明の効果】本発明によれば、窒化ケイ素又はサイア
ロンを主成分とするセラミックス焼結体の表面に、高い
密着性のダイヤモンド又はダイヤモンド状炭素の被膜を
簡単な方法で、生産性良く、且つ高い歩留りで形成する
ことができ、従って表面に高い密着性のダイヤモンド又
はダイヤモンド状炭素の被膜を備えたセラミックス製摺
動部材を提供することができる。According to the present invention, a highly adherent diamond or diamond-like carbon coating is formed on the surface of a ceramics sintered body containing silicon nitride or sialon as a main component by a simple method with high productivity, and It is possible to provide a ceramic sliding member which can be formed with a high yield and therefore has a highly adherent coating of diamond or diamond-like carbon on its surface.
【図1】実施例1での熱処理条件の異なる焼結体ごと
に、焼結体表面から深さ方向におけるY20N4Si12O
48とCa(Fe,Mg)Si2O6の濃度分布を示したグ
ラフである。FIG. 1 shows Y 20 N 4 Si 12 O in the depth direction from the surface of the sintered body for each sintered body under different heat treatment conditions in Example 1.
4 is a graph showing concentration distributions of 48 and Ca (Fe, Mg) Si 2 O 6 .
【図2】実施例1での熱処理条件の異なる焼結体ごと
に、焼結体の抗折力と測定温度との関係を示したグラフ
である。FIG. 2 is a graph showing the relationship between the transverse rupture strength of a sintered body and the measured temperature for each sintered body under different heat treatment conditions in Example 1.
【図3】実施例4での熱処理条件の異なる焼結体ごと
に、焼結体表面から深さ方向におけるCa(Fe,M
g)Si2O6の濃度分布を示したグラフである。FIG. 3 shows Ca (Fe, M in the depth direction from the surface of the sintered body for each sintered body under different heat treatment conditions in Example 4.
g) A graph showing the concentration distribution of Si 2 O 6 .
Claims (5)
るセラミックス焼結体の表面上に、ダイヤモンド又はダ
イヤモンド状炭素の被膜を設けたセラミックス製摺動部
材において、該被膜の設けられたセラミックス焼結体の
表面から少なくとも100μmの深さの領域内のCa濃
度が、この領域より内部におけるCa濃度よりも減少し
ていることを特徴とするセラミックス製摺動部材。1. A ceramics sliding member having a coating of diamond or diamond-like carbon on the surface of a ceramics sintered body containing silicon nitride or sialon as a main component. The ceramic sliding member is characterized in that the Ca concentration in a region at a depth of at least 100 μm from the surface is lower than the Ca concentration inside the region.
るセラミックス焼結体を真空中において熱処理すること
により、セラミックス焼結体の表面から少なくとも10
0μmの深さの領域内のCa成分を消失ないし減少させ
た後、その表面にダイヤモンド又はダイヤモンド状炭素
の被膜を形成することを特徴とするセラミックス製摺動
部材の製造方法。2. A ceramic sintered body containing silicon nitride or sialon as a main component is heat-treated in a vacuum to remove at least 10 from the surface of the ceramic sintered body.
A method for producing a ceramic sliding member, characterized in that after a Ca component in a region having a depth of 0 μm is eliminated or reduced, a coating film of diamond or diamond-like carbon is formed on the surface thereof.
ことを特徴とする、請求項2に記載のセラミックス製摺
動部材の製造方法。3. The method for producing a ceramic sliding member according to claim 2, wherein the heat treatment is performed in a vacuum of 10 −3 Pa or less.
2〜6時間行うことを特徴とする、請求項2又は3に記
載のセラミックス製摺動部材の製造方法。4. The method for producing a ceramic sliding member according to claim 2, wherein the heat treatment is performed at a temperature of 1100 to 1400 ° C. for 2 to 6 hours.
化ケイ素又はサイアロン粉末が、Ca化合物をCaに換
算して1ppm〜1重量%含んでいることを特徴とす
る、請求項2〜4のいずれかに記載のセラミックス製摺
動部材の製造方法。5. The silicon nitride or sialon powder, which is a starting material for a ceramics sintered body, contains 1 ppm to 1% by weight of a Ca compound in terms of Ca, and any one of claims 2 to 4 is characterized. A method for producing a ceramic sliding member as described in 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16891994A JPH0812471A (en) | 1994-06-28 | 1994-06-28 | Ceramic sliding member and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16891994A JPH0812471A (en) | 1994-06-28 | 1994-06-28 | Ceramic sliding member and method of manufacturing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0812471A true JPH0812471A (en) | 1996-01-16 |
Family
ID=15876994
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16891994A Pending JPH0812471A (en) | 1994-06-28 | 1994-06-28 | Ceramic sliding member and method of manufacturing the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0812471A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1138656A1 (en) * | 2000-03-31 | 2001-10-04 | Ngk Spark Plug Co., Ltd. | Silicon nitride member, method for manufacturing the same, and cutting tool |
-
1994
- 1994-06-28 JP JP16891994A patent/JPH0812471A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1138656A1 (en) * | 2000-03-31 | 2001-10-04 | Ngk Spark Plug Co., Ltd. | Silicon nitride member, method for manufacturing the same, and cutting tool |
US6863963B2 (en) | 2000-03-31 | 2005-03-08 | Ngk Spark Plug Co., Ltd. | Silicon nitride member, method for manufacturing the same, and cutting tool |
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