JPH0754641B2 - Reflecting mirror and manufacturing method thereof - Google Patents
Reflecting mirror and manufacturing method thereofInfo
- Publication number
- JPH0754641B2 JPH0754641B2 JP1309078A JP30907889A JPH0754641B2 JP H0754641 B2 JPH0754641 B2 JP H0754641B2 JP 1309078 A JP1309078 A JP 1309078A JP 30907889 A JP30907889 A JP 30907889A JP H0754641 B2 JPH0754641 B2 JP H0754641B2
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- Japan
- Prior art keywords
- film layer
- substrate
- metal
- dielectric film
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 [産業上の利用分野] 本発明は証明器具等に使用する反射鏡、殊に金属の基板
に誘電体膜層が形成されてなる反射鏡に関する。Description: TECHNICAL FIELD The present invention relates to a reflecting mirror used for a certifying device or the like, and more particularly to a reflecting mirror formed by forming a dielectric film layer on a metal substrate.
[従来の技術] 従来、例えば基板が金属からなるコールドミラー(メタ
ルダイクロイックミラー)やカラーランプミラー等にお
いては、基板の表面に誘電体からなる吸収層が配置さ
れ、その上に、特定の波長域の光だけを反射し別の波長
域の光を透過させる特性を有する誘電体多層膜からなる
誘電体膜層が設けられている。即ちコールドミラーに於
ては、熱線である赤外線は誘電体膜層(コールドミラー
層)で反射されずに透過して赤外線吸収層に達し、金属
の基板背面より放熱される。またカラーランプミラーに
於ても特定の波長(色)の光だけが反射される。[Prior Art] Conventionally, for example, in a cold mirror (metal dichroic mirror) whose substrate is made of metal, a color lamp mirror, and the like, an absorption layer made of a dielectric material is arranged on the surface of the substrate, and a specific wavelength range is formed on the absorption layer. A dielectric film layer formed of a dielectric multilayer film having a characteristic of reflecting only the light of (4) and transmitting the light of another wavelength range is provided. That is, in the cold mirror, infrared rays, which are heat rays, pass through the dielectric film layer (cold mirror layer) without being reflected, reach the infrared absorption layer, and are radiated from the back surface of the metal substrate. In addition, only the light of a specific wavelength (color) is reflected by the color lamp mirror.
これ等の反射鏡は、誘電体膜層と金属基板とは膨張係数
等の物理的特性が異なり、また互いの付着性も悪いの
で、1)基板を陽極酸化法等によるアルマイト処理し、
その後真空蒸着法で、吸収層及び誘電体多層膜を形成し
たり、2)金属基板に、吹き付けや刷毛塗り等より塗膜
を形成して下地処理をし、その後吹き付けまたは真空蒸
着法で吸収層を形成した後、真空蒸着法で誘電体多層膜
を形成する等の方法で作られていた。These reflecting mirrors have different physical properties such as expansion coefficient between the dielectric film layer and the metal substrate, and also have poor adhesiveness to each other. Therefore, 1) anodize the substrate by anodizing or the like,
After that, the absorption layer and the dielectric multilayer film are formed by the vacuum vapor deposition method, or 2) a coating film is formed on the metal substrate by spraying, brush coating, etc. to perform the base treatment, and then the absorption layer is sprayed or the vacuum vapor deposition method. After the formation, the dielectric multilayer film was formed by a vacuum vapor deposition method.
[発明が解決しようとする課題] しかし、従来の方法ではアルマイト処理や吹き付け、刷
毛塗りと、真空蒸着という性質の全く異なる2工程を少
なくとも必要とした。そのため設備的に大変であり、ま
た工程間で空気に触れ、空気中の汚染物質で下地処理の
上に形成される誘電体膜層の付着力が低下してしまつ
た。[Problems to be Solved by the Invention] However, the conventional methods require at least two completely different properties such as alumite treatment, spraying, brush coating, and vacuum deposition. As a result, it is difficult for the equipment, and the air is exposed to air between the processes, and the adhesion of the dielectric film layer formed on the undercoating is reduced due to the pollutants in the air.
また、アルマイト処理や吹き付け、刷毛塗り等により誘
電体膜層を施す前の表面状態が既に平滑性を欠き、その
上に誘電体膜層を施す為、完成品の反射率や光学特性が
低下する欠点があつた。In addition, the surface state before applying the dielectric film layer by alumite treatment, spraying, brushing, etc. is already lacking smoothness, and the dielectric film layer is applied on top of it, so the reflectance and optical characteristics of the finished product deteriorate. There was a flaw.
本発明は、基板と誘電体膜層間の付着性が優れ、平滑な
表面状態の反射鏡及びその製造方法を提供することを目
的としている。An object of the present invention is to provide a reflecting mirror having excellent adhesion between a substrate and a dielectric film layer and having a smooth surface state, and a manufacturing method thereof.
[課題を解決するための手段] この目的を達成させるために、この発明では、金属の基
板と誘電体膜相という物理的特性が異なり、また互いの
付着性も悪い2つの素材間を橋渡しする為、基板側では
基板に近い性質を有し、誘電体膜層側では誘電体膜層に
近い性質を有するような中間膜層を設けた。[Means for Solving the Problems] In order to achieve this object, the present invention bridges between two materials having different physical properties of a metal substrate and a dielectric film phase and having poor adhesion to each other. Therefore, an intermediate film layer having properties close to the substrate on the substrate side and properties close to the dielectric film layer on the dielectric film layer side is provided.
すなわち、第1の発明は、所望の形に成形された金属の
基板の表面に誘電体膜層が形成されてなる反射鏡に於
て、基板と誘電体膜層との間に、基板付近では金属及び
その低級酸化物からなり、誘電体膜層に近づくにしたが
って、その高級酸化物からなる中間膜層を有することを
特徴とする反射鏡であり、 第2の発明は、真空容器内に於てイオンプレーティング
法により、真空容器内へのO2ガスの導入量を次第に増や
しながら金属の基板の表面に、基板付近では金属及びそ
の低級酸化物からなり膜厚が増すにつれて高級酸化物か
らなるように中間膜層を形成し、その後連続してその上
に誘電体膜層を形成することを特徴とする反射鏡の製造
方法である。That is, the first invention is a reflecting mirror in which a dielectric film layer is formed on the surface of a metal substrate formed into a desired shape, and in the vicinity of the substrate, between the substrate and the dielectric film layer. A second aspect of the present invention is a reflecting mirror comprising a metal and a lower oxide thereof and having an intermediate film layer of a higher oxide thereof as the dielectric film layer is approached. By the ion plating method, the amount of O 2 gas introduced into the vacuum chamber is gradually increased, and the metal is formed on the surface of the metal substrate, near the substrate is made of metal and its lower oxide, and as the film thickness increases, it is made of higher oxide. Thus, the method for manufacturing a reflecting mirror is characterized in that the intermediate film layer is formed as described above, and then the dielectric film layer is continuously formed thereon.
基板を構成する金属としては、例えば、アルミニュウム
(Al)、銅(Cu)、ニッケル(Ni)、チタン(Ti)、あ
るいはこれ等の合金及びステンレス等がある。Examples of the metal forming the substrate include aluminum (Al), copper (Cu), nickel (Ni), titanium (Ti), alloys of these, and stainless steel.
また、中間膜層の金属及びその酸化物を構成する金属と
しては、基板と同じ金属でも、或いは、基板との付着
力、膜強度、熱膨張係数等が適応すれば、別種の金属、
例えばクロム(Cr)、ジルコニュウム(Zr)、インジュ
ウム(In)等を使用できる。Further, as the metal of the intermediate film layer and the metal constituting the oxide thereof, the same metal as that of the substrate, or another metal if the adhesion with the substrate, the film strength, the coefficient of thermal expansion, etc. are applicable,
For example, chromium (Cr), zirconium (Zr), indium (In), etc. can be used.
誘電体膜層としては、硫化亜鉛(ZnS)、フッ化マグネ
シウム(MgF2)、酸化クロム(Cr2O3)、酸化チタン(T
iO2)、酸化シリコン(SiO2)、酸化タンタル(Ta2O5)
等の誘電体膜が、コールドミラーやカラーミラー等の用
とに応じて多層構造になされている。As the dielectric film layer, zinc sulfide (ZnS), magnesium fluoride (MgF 2 ), chromium oxide (Cr 2 O 3 ), titanium oxide (T
iO 2 ), silicon oxide (SiO 2 ), tantalum oxide (Ta 2 O 5 ).
The dielectric film such as is made into a multi-layered structure depending on the use of a cold mirror, a color mirror or the like.
[作用] 第1の発明では、金属の基板と誘電体膜層との間に形成
された中間膜層が、基板付近では金属及びその低級酸化
物(誘電体の性質を有する)からなり基板の金属に近い
特性を有し、膜厚が増し誘電体膜層に近づくにしたがっ
て、その酸化が進んだ高級酸化物(誘電体の性質を有す
る)からなり誘電体膜層に近い特性を有し、特性の異な
る金属の誘電体膜層との橋渡しをし、付着性を良好なも
のとしている。[Operation] In the first invention, the intermediate film layer formed between the metal substrate and the dielectric film layer is made of metal and its lower oxide (having a dielectric property) in the vicinity of the substrate. It has characteristics close to those of metal, and has characteristics close to those of a dielectric film layer made of a higher oxide (having a dielectric property) whose oxidation progresses as the film thickness increases and approaches the dielectric film layer. It bridges the dielectric film layers of metals with different characteristics to improve the adhesion.
第2の発明では、第1の発明の中間膜層を作るために、
真空容器内に於てイオンプレーティング法により、真空
容器内へのO2ガスの導入量を次第に増やしながら金属の
基板の表面に、中間層膜を形成していき、酸化が進んで
低級酸化物から次第に高級酸化物が多くなるようにして
中間膜層を形成し、その後、大気に触れることなく連続
してその上に誘電体膜層を形成される。In the second invention, in order to form the interlayer film of the first invention,
By gradually increasing the amount of O 2 gas introduced into the vacuum container by the ion plating method in the vacuum container, an intermediate layer film is formed on the surface of the metal substrate, and oxidation progresses to lower oxides. Then, an intermediate film layer is formed so that the amount of higher oxides gradually increases, and thereafter, a dielectric film layer is continuously formed on the intermediate film layer without being exposed to the atmosphere.
[実施例] 第1図に於てコールドミラーは、アルミニュウム(Al)
の基板1からなり、椀型部2とランプ取付け部3を有し
ている。椀型部2の内面には、第2図のように、中間膜
層4と、Cr2O3の誘電体からなる赤外線吸収層5と、TiO
2とSiO2の誘電体交互多層膜からなるコールドミラー層
6とが形成されている。[Embodiment] In FIG. 1, the cold mirror is aluminum (Al).
It has a bowl-shaped part 2 and a lamp mounting part 3. On the inner surface of the bowl-shaped portion 2, as shown in FIG. 2, an intermediate film layer 4, an infrared absorption layer 5 made of a dielectric material of Cr 2 O 3 , and a TiO 2 layer.
A cold mirror layer 6 made of a dielectric alternating multilayer film of 2 and SiO 2 is formed.
中間膜層4は基板1付近では大部分のAlと少しのAlOで
あるが、赤外線吸収層5に近づくに従ってAlOやAl2O3が
多くなり、赤外線吸収層5付近では殆ど、安定なAl2O3
になつているような傾斜傾向を有している。(第3
図)。The intermediate film layer 4 is mostly Al and a little AlO in the vicinity of the substrate 1, but the amount of AlO and Al 2 O 3 increases as it approaches the infrared absorption layer 5, and almost stable Al 2 in the vicinity of the infrared absorption layer 5. O 3
It has a tendency to tilt. (Third
Figure).
第4図は、このような反射鏡を製造する為の高周波イオ
ンプレーティング装置を示すもので、真空容器11内に、
基板ホルダー12、RFコイル13、Al及び赤外線吸収層、誘
電体交互多層膜を形成する試料(蒸着物)がそれぞれに
入つたルツボを有する蒸発源14、膜厚計15が配置され、
真空容器11には油回転ポンプ16、油拡散ポンプ17及びガ
ス供給装置18が接続されている。尚、Al及び赤外線吸収
層、誘電体交互多層膜を形成する試料の蒸着制御は蒸発
源上方に設けられたシャッタ19を移動することにより行
われる。FIG. 4 shows a high-frequency ion plating device for manufacturing such a reflecting mirror.
A substrate holder 12, an RF coil 13, an Al and infrared absorption layer, an evaporation source 14 having a crucible containing a sample (deposited material) for forming a dielectric alternating multilayer film, a film thickness meter 15 are arranged,
An oil rotary pump 16, an oil diffusion pump 17, and a gas supply device 18 are connected to the vacuum container 11. The evaporation control of the sample forming the Al and infrared absorption layers and the alternating dielectric multilayer film is performed by moving the shutter 19 provided above the evaporation source.
真空容器11内の基板ホルダー12に所望の形状に成形され
たAl基板1をセットし、油回転ポンプ16及び油拡散ポン
プ17で真空容器内の空気を排気した後、高周波でボンバ
ードクリーニングして基板表面の汚れや酸化物を除去し
た後、ガス供給装置18よりアルゴン(Ar)ガスを導入
し、プラズマ中でAlの蒸着を開始し、Arガスの導入量を
次第に減少させ、酸素(O2)ガスの導入量を増加させて
いくことによりAlの酸化を進め、膜厚が増すにつれて誘
電体であるAlO、Al2O3が増えていき最終的には殆どAl2O
3からなる。このようにして形成された中間膜層4の厚
さは0.1〜2μぐらいである。The Al substrate 1 formed into a desired shape is set on the substrate holder 12 in the vacuum container 11, the air in the vacuum container is exhausted by the oil rotary pump 16 and the oil diffusion pump 17, and then the substrate is subjected to bombard cleaning with high frequency. After removing dirt and oxides on the surface, argon (Ar) gas was introduced from the gas supply device 18, Al vapor deposition was started in the plasma, and the amount of Ar gas introduced was gradually reduced to oxygen (O 2 ). By increasing the amount of gas introduced, the oxidation of Al is promoted, and as the film thickness increases, the dielectric substances AlO and Al 2 O 3 increase, and finally Al 2 O
It consists of three . The thickness of the intermediate film layer 4 thus formed is about 0.1 to 2 μm.
シャッタ19を開閉して、蒸発源の別の加熱された蒸着物
を更に連続して蒸着して、中間膜層4の表面に同じ誘電
体膜である赤外線吸収膜層5及びその上にコールドミラ
ー層6を形成する。The shutter 19 is opened and closed to further continuously deposit another heated deposit of the evaporation source, and the infrared absorbing film layer 5 which is the same dielectric film on the surface of the intermediate film layer 4 and the cold mirror thereon. Form layer 6.
尚、この実施例ではAl基板に、Al及びその酸化物からな
る中間膜層を形成したが、基板にCu、Ni、Ti、これ等の
合金及びステンレス等を使用してもよい。また、中間膜
層の金属及びその酸化物として、基板と同じ金属及びそ
の酸化物(例えばCuO、NiO、TiO2)でも、或いは、基板
との付着力、膜強度、熱膨張係数等が適応すれば、Cr、
Zr、In及びその酸化物(Cr2O3、ZrO2、In2O3)等を使用
しても良い。In this embodiment, the intermediate film layer made of Al and its oxide is formed on the Al substrate, but Cu, Ni, Ti, alloys of these, stainless steel or the like may be used for the substrate. As the metal and its oxide of the intermediate film layer, the same metal and its oxide as the substrate (eg CuO, NiO, TiO 2 ) or the adhesion to the substrate, the film strength, the coefficient of thermal expansion, etc. are applicable. If Cr,
Zr, In and oxides thereof (Cr 2 O 3 , ZrO 2 , In 2 O 3 ) and the like may be used.
[発明の効果] 第1の発明では、所望の形に成形された金属の基板の表
面に誘電体膜層が形成されてなる反射鏡に於て、基板と
誘電体膜層との間に、基板付近では金属及びその低級酸
化物からなり、誘電体膜層に近づくにしたがってその高
級酸化物からなる、中間膜層を有し、この中間膜層は基
板付近では基板の金属に近い特性を有し、膜厚が増し誘
電体膜層に近づくにしたがって、誘電体膜層に近い特性
を有しているので、金属の基板と誘電体膜層との付着性
が極めて良く、耐久性もあり、しかもイオンプレーティ
ング法により形成できるので、中間膜層の表面が平滑
で、反射率や光学特性が優れている等の利点がある。[Advantages of the Invention] In the first invention, in a reflecting mirror in which a dielectric film layer is formed on the surface of a metal substrate formed into a desired shape, between the substrate and the dielectric film layer, There is an intermediate film layer consisting of a metal and its lower oxide near the substrate, and a higher oxide thereof as it approaches the dielectric film layer. This intermediate film layer has characteristics close to the metal of the substrate near the substrate. However, as the film thickness increases and approaches the dielectric film layer, the film has properties close to those of the dielectric film layer, so the adhesion between the metal substrate and the dielectric film layer is extremely good, and the durability is high. Moreover, since it can be formed by the ion plating method, it has the advantages that the surface of the intermediate film layer is smooth and the reflectance and optical characteristics are excellent.
第2の発明では、真空容器内に於てイオンプレーティン
グ法により、真空容器内へのO2ガスの導入量を次第に増
やしながら金属の基板の表面に、基板付近では金属及び
その低級酸化物からなり膜厚が増すにつれて高級酸化物
からなるような中間膜層を形成し、その後連続してその
上に誘電体膜層を形成するようにしてなる方法の発明
で、金属の基板側では基板に近い特性を有し、誘電体膜
層側では誘電体膜層に近い特性を持ち、平滑な面を有す
る中間膜層が得られ、連続して誘電体膜層が形成される
ので、基板と中間膜層と誘電体膜層との付着性が優れ耐
久性のある、反射率や光学特性が優れた反射鏡が得られ
る。また、設備的にも一つの装置で製造できる等の利点
がある。In the second invention, the amount of O 2 gas introduced into the vacuum container is gradually increased by the ion plating method in the vacuum container, and the metal and the lower oxide thereof are separated from the surface of the metal substrate near the substrate. Is an invention of a method in which an intermediate film layer made of a higher oxide is formed as the film thickness increases, and then a dielectric film layer is continuously formed thereon. An intermediate film layer having similar properties and a property close to that of the dielectric film layer on the side of the dielectric film layer, and having a smooth surface is obtained, and the dielectric film layer is continuously formed. It is possible to obtain a reflecting mirror having excellent adhesion between the film layer and the dielectric film layer and having durability and excellent reflectance and optical characteristics. In addition, there is an advantage in that the equipment can be manufactured by one device.
第1図は本発明の反射鏡の一実施例を一部破断し示す
図、第2図は膜層構造を示す図、第3図は中間膜層を構
成する金属及びその酸化物の傾斜傾向をAlを例に示す
図、第4図は、本発明の反射鏡を製造する製造装置の一
例を示す図である。 1……基板、4……中間膜層、5……誘電体膜層(赤外
線吸収膜層)、6……誘電体膜層(コールドミラー層)FIG. 1 is a partially cutaway view showing an embodiment of a reflecting mirror of the present invention, FIG. 2 is a view showing a film layer structure, and FIG. 3 is a inclination tendency of a metal and an oxide thereof constituting an intermediate film layer. FIG. 4 is a diagram showing Al as an example, and FIG. 4 is a diagram showing an example of a manufacturing apparatus for manufacturing the reflecting mirror of the present invention. 1 ... Substrate, 4 ... Intermediate film layer, 5 ... Dielectric film layer (infrared absorbing film layer), 6 ... Dielectric film layer (cold mirror layer)
フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 C23C 14/08 Z 9271−4K G02B 5/08 C 9224−2K Continuation of front page (51) Int.Cl. 6 Identification number Office reference number FI technical display location C23C 14/08 Z 9271-4K G02B 5/08 C 9224-2K
Claims (2)
誘電体膜層が形成されてなる反射鏡に於て、基板と誘電
体膜層との間に、基板付近では金属及びその低級酸化物
からなり、誘電体膜層に近づくにしたがってその高級酸
化物からなる、中間膜層を有することを特徴とする反射
鏡。1. A reflecting mirror comprising a dielectric film layer formed on the surface of a metal substrate formed into a desired shape, wherein a metal and a metal film are formed between the substrate and the dielectric film layer. A reflecting mirror having an intermediate film layer made of a lower oxide, and made of a higher oxide as it gets closer to the dielectric film layer.
により、真空容器内へのO2ガスの導入量を次第に増やし
ながら金属の基板の表面に、基板付近では金属及びその
低級酸化物からなり、膜厚が増すにつれて高級酸化物か
らなるような中間膜層を形成し、その後連続してその上
に誘電体膜層を形成することを特徴とする反射鏡の製造
方法。2. An ion plating method in a vacuum container, which gradually increases the amount of O 2 gas introduced into the vacuum container and forms a metal and a lower oxide thereof on the surface of the metal substrate in the vicinity of the substrate. A method for manufacturing a reflecting mirror, which comprises forming an intermediate film layer made of a higher oxide as the film thickness increases, and then successively forming a dielectric film layer thereon.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1309078A JPH0754641B2 (en) | 1989-11-30 | 1989-11-30 | Reflecting mirror and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1309078A JPH0754641B2 (en) | 1989-11-30 | 1989-11-30 | Reflecting mirror and manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH03171503A JPH03171503A (en) | 1991-07-25 |
JPH0754641B2 true JPH0754641B2 (en) | 1995-06-07 |
Family
ID=17988620
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1309078A Expired - Lifetime JPH0754641B2 (en) | 1989-11-30 | 1989-11-30 | Reflecting mirror and manufacturing method thereof |
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Country | Link |
---|---|
JP (1) | JPH0754641B2 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3474312B2 (en) * | 1995-05-12 | 2003-12-08 | 株式会社リコー | Synthetic resin reflecting mirror, method of manufacturing the same, and manufacturing apparatus |
JP4466198B2 (en) * | 2004-05-25 | 2010-05-26 | ウシオ電機株式会社 | Light source device |
CN100549495C (en) * | 2004-09-14 | 2009-10-14 | 凤凰电机公司 | Metal concave reflecting mirror and the light source body that adopts it with and light supply apparatus and bright circuit for lamp |
JP5045261B2 (en) * | 2007-06-20 | 2012-10-10 | セントラル硝子株式会社 | Surface mirror |
JP4951482B2 (en) * | 2007-12-10 | 2012-06-13 | 三菱電機株式会社 | Reflector, display device, and manufacturing method thereof |
-
1989
- 1989-11-30 JP JP1309078A patent/JPH0754641B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH03171503A (en) | 1991-07-25 |
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