JPH07231128A - Magnetoresistance element - Google Patents
Magnetoresistance elementInfo
- Publication number
- JPH07231128A JPH07231128A JP6021539A JP2153994A JPH07231128A JP H07231128 A JPH07231128 A JP H07231128A JP 6021539 A JP6021539 A JP 6021539A JP 2153994 A JP2153994 A JP 2153994A JP H07231128 A JPH07231128 A JP H07231128A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- film
- identification means
- conductive thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims abstract description 139
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 239000010408 film Substances 0.000 claims abstract description 53
- 239000000463 material Substances 0.000 claims abstract description 27
- 230000001681 protective effect Effects 0.000 claims description 23
- 239000011368 organic material Substances 0.000 abstract description 12
- 239000012780 transparent material Substances 0.000 abstract description 4
- 239000004020 conductor Substances 0.000 description 9
- 229910010272 inorganic material Inorganic materials 0.000 description 9
- 239000011147 inorganic material Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 239000006089 photosensitive glass Substances 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 230000002411 adverse Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、基板上にチップの品種
名を表す任意な記号、文字等からなる識別手段用薄膜を
形成して各チップを識別するようにした磁気抵抗素子に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive element in which each chip is identified by forming a thin film for identifying means, which is composed of arbitrary symbols, characters, etc., representing a product name of a chip on a substrate.
【０００２】[0002]
【従来の技術】磁気抵抗素子において、各種絶縁基板を
用いてこの基板上に磁性薄膜及びこの磁性薄膜と導通す
る端子用導電薄膜を形成し、これら磁性薄膜及び端子用
導電薄膜上に透明体あるいは不透明体からなる保護膜を
形成した構造のものが知られている。この構造によれ
ば、基板の表面は保護膜で被覆されているので外部の雰
囲気の影響を受けることがないため、例えば耐湿性が向
上するようになって安定に動作することができる。この
場合、保護膜としては、ＳｉＯ2 （二酸化珪素）、Ｓｉ
3 Ｎ4(窒化珪素) 、Ａｌ2 Ｏ3(酸化アルミニウム) 等か
らなる無機材料膜や、エポキシ系、ポリイミド系、ポリ
エステル系樹脂等からなる有機材料膜が周知の方法で形
成されて用いられている。一般にこれらの保護膜は、耐
湿性を向上しようとして膜厚を大きくすると、膜の性質
は透明から徐々に不透明に変化してくる。2. Description of the Related Art In a magnetoresistive element, various insulating substrates are used to form a magnetic thin film and a conductive thin film for terminals which are electrically connected to the magnetic thin film, and a transparent body or a transparent body is formed on these magnetic thin film and conductive thin film for terminals. A structure in which a protective film made of an opaque body is formed is known. According to this structure, since the surface of the substrate is covered with the protective film, it is not affected by the external atmosphere, so that, for example, moisture resistance is improved and stable operation can be achieved. In this case, as the protective film, SiO 2 (silicon dioxide), Si
An inorganic material film made of 3 N 4 (silicon nitride), Al 2 O 3 (aluminum oxide), or the like, or an organic material film made of epoxy-based, polyimide-based, polyester-based resin, or the like is formed and used by a known method. There is. Generally, when the thickness of these protective films is increased in order to improve the moisture resistance, the properties of the films change from transparent to opaque.
【０００３】このような磁気抵抗素子において、基板上
に磁性薄膜及び端子用導電薄膜を形成する際、チップの
品種名を表す任意な記号、文字等からなる識別手段とし
て機能する薄膜（識別手段用薄膜）をそれら磁性薄膜あ
るいは端子用導電薄膜と同材料から共に形成して、この
識別手段用薄膜を読み取って確認することで各チップの
識別を容易にすることが行われている。これは磁性薄膜
あるいは端子用導電薄膜となる材料膜を蒸着法、ＣＶＤ
法、スパッタリング法等によって基板上に全面に付着し
た後、材料膜を磁性薄膜あるいは端子用導電薄膜として
動作するように微細エッチング加工によって所望の形状
にパターン化する際、同時に識別手段用薄膜として任意
な記号、文字等に加工することによって形成される。In such a magnetoresistive element, when a magnetic thin film and a conductive thin film for terminals are formed on a substrate, a thin film (for identifying means) which functions as an identifying means composed of arbitrary symbols, letters, etc. representing the type name of the chip. A thin film) is formed together with the magnetic thin film or the conductive thin film for terminals and the thin film for identification means is read and confirmed to facilitate the identification of each chip. In this method, a material film that becomes a magnetic thin film or a conductive thin film for terminals is formed by vapor deposition, CVD
After the material film is deposited on the entire surface by a sputtering method, a sputtering method, or the like, and when the material film is patterned into a desired shape by fine etching so that it operates as a magnetic thin film or a conductive thin film for terminals, it is optionally used as a thin film for identification means. It is formed by processing into various symbols and characters.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、従来の
磁気抵抗素子では、磁性薄膜あるいは端子用導電薄膜と
共に識別手段用薄膜を形成しても、この後磁性薄膜及び
端子用導電薄膜上に保護膜を形成する際識別手段用薄膜
も保護膜で被覆されてしまうので、この保護膜の存在に
よって識別手段用薄膜が読み取れなくなるという問題が
ある。保護膜は十分な保護効果を得るためには、その膜
厚を大きくとったり、あるいは透明体だけでなくこれに
不透明体を重ねた積層構造を採用することが多いので、
結果的に識別手段用薄膜は不透明体の保護膜で被覆され
てしまうため、読み取り不可能になる。また、基板とし
て透明材料を用いた場合は、基板の裏面から識別手段用
薄膜を読み取れることもあるが、不透明材料の基板を用
いた場合はこれも不可能になる。However, in the conventional magnetoresistive element, even if the identification thin film is formed together with the magnetic thin film or the terminal conductive thin film, a protective film is then formed on the magnetic thin film and the terminal conductive thin film. Since the identification means thin film is also covered with the protective film during formation, there is a problem that the identification means thin film cannot be read due to the presence of this protective film. In order to obtain a sufficient protective effect, the protective film often has a large film thickness or employs a laminated structure in which not only a transparent body but also an opaque body is laminated,
As a result, the identification means thin film is covered with an opaque protective film, making it unreadable. Further, when a transparent material is used as the substrate, the identification means thin film may be read from the back surface of the substrate, but this is not possible when a substrate made of an opaque material is used.
【０００５】本発明は以上のような問題に対処してなさ
れたもので、磁性薄膜及び端子用導電薄膜上に保護膜が
存在していても、磁性薄膜あるいは端子用導電薄膜と同
材料で共に形成した識別手段用薄膜が容易に読み取れる
ようにした磁気抵抗素子を提供することを目的とするも
のである。The present invention has been made to solve the above problems. Even if a protective film is present on the magnetic thin film and the terminal conductive thin film, the same material as the magnetic thin film or the terminal conductive thin film is used together. It is an object of the present invention to provide a magnetoresistive element in which the formed identification means thin film can be easily read.
【０００６】[0006]
【課題を解決するための手段】上記目的を達成するため
に請求項１に係わる本発明は、基板と、該基板上に形成
された磁性薄膜及び端子用導電薄膜と、上記磁性薄膜及
び端子用導電薄膜上に形成された透明体あるいは不透明
体からなる保護膜とを有する磁気抵抗素子において、上
記基板上に上記磁性薄膜あるいは端子用導電薄膜と同材
料からなる識別手段用薄膜を該当したいずれかの薄膜と
共に形成し、かつ上記識別手段用薄膜上では不透明体か
らなる保護膜が除かれていることを特徴とするものであ
る。To achieve the above object, the present invention according to claim 1 provides a substrate, a magnetic thin film formed on the substrate and a conductive thin film for a terminal, and the magnetic thin film and a terminal. In a magnetoresistive element having a protective film formed of a transparent body or an opaque body formed on a conductive thin film, any one of a thin film for identification means made of the same material as the magnetic thin film or the terminal conductive thin film is applicable on the substrate. And a protective film made of an opaque material is removed from the thin film for identification means.
【０００７】請求項２に係わる本発明は、請求項１にお
いて、上記識別手段用薄膜は、上記基板上の隅部近くに
形成されている接地用の導電薄膜の近傍に形成したこと
を特徴とするものである。According to a second aspect of the present invention, in the first aspect, the identifying means thin film is formed near a grounding conductive thin film formed near a corner of the substrate. To do.
【０００８】[0008]
【作用】請求項１に係わる本発明の構成によれば、基板
上に磁性薄膜あるいは端子用導電薄膜と同材料からなる
識別手段用薄膜を該当したいずれかの薄膜と共に形成
し、かつ上記識別手段用薄膜上では不透明体からなる保
護膜が除かれていることにより、識別手段用薄膜は容易
に読み取ることができるようになる。According to the structure of the present invention according to claim 1, a thin film for identifying means made of the same material as the magnetic thin film or the conductive thin film for terminals is formed on the substrate together with any of the applicable thin films, and the identifying means is provided. Since the protective film made of an opaque material is removed from the thin film for identification, the thin film for identification means can be easily read.
【０００９】請求項２に係わる本発明の構成によれば、
上記識別手段用薄膜は、上記基板上の隅部近くに形成さ
れている接地用の導電薄膜の近傍に形成したことによ
り、素子動作に悪影響を及ぼすことなく、請求項１と同
様な作用が行われる。According to the configuration of the present invention according to claim 2,
Since the thin film for identification means is formed in the vicinity of the conductive thin film for grounding formed near the corner on the substrate, the same operation as in claim 1 can be performed without adversely affecting the operation of the element. Be seen.
【００１０】[0010]
【実施例】以下図面を参照して本発明の実施例を説明す
る。図１は本発明の磁気抵抗素子の実施例を示す平面図
で、図２は図１の部分的断面図である。１は感光ガラス
基板（以下、単に基板と称する）で、この基板１は例え
ば長方形のものが用いられ、長方形の四隅部には各々例
えば断面形状が円形の貫通孔２が形成されて、各貫通孔
２には導電材３が形成されている。このような形状の基
板１は後述のような方法で製造される。４は基板１上に
形成された磁性薄膜で例えばストライプ状のパターンに
形成されて、各磁性薄膜４は各導電材３に接続するよう
に形成された端子用導電薄膜５に導通されている。基板
１の各隅部に形成されている四隅の端子用導電薄膜５の
うち一個（例えば５Ａとする）は、接地用のものであ
る。また、基板１の裏面には各導電材３と導通するよう
に外部接続用導体６が形成されている。Embodiments of the present invention will be described below with reference to the drawings. 1 is a plan view showing an embodiment of a magnetoresistive element of the present invention, and FIG. 2 is a partial sectional view of FIG. Reference numeral 1 denotes a photosensitive glass substrate (hereinafter, simply referred to as a substrate). The substrate 1 is, for example, a rectangular substrate, and through holes 2 having a circular cross-section are formed at four corners of the rectangle, respectively. A conductive material 3 is formed in the hole 2. The substrate 1 having such a shape is manufactured by the method described below. Reference numeral 4 denotes a magnetic thin film formed on the substrate 1, which is formed in, for example, a stripe pattern, and each magnetic thin film 4 is electrically connected to a terminal conductive thin film 5 formed so as to be connected to each conductive material 3. One of the terminal conductive thin films 5 (for example, 5 A) formed at each corner of the substrate 1 is for grounding. Further, an external connection conductor 6 is formed on the back surface of the substrate 1 so as to be electrically connected to each conductive material 3.
【００１１】７は基板１上の接地用の導電薄膜５Ａの近
傍に形成された識別手段用薄膜で、チップの品種名を表
す任意な記号、文字等からなっていて、例えば端子用導
電薄膜５と同材料でこの端子用導電薄膜５と共に形成さ
れている。８は基板１上に磁性薄膜４、端子用導電薄膜
５及び識別手段用薄膜７を被覆するように形成された無
機材料膜で、例えばＳｉＯ2 膜のような透明体が用いら
れている。９はこの無機材料膜８を被覆するように形成
された有機材料膜で、例えばポリイミド系樹脂のような
不透明体が用いられている。これら無機材料膜８及び有
機材料膜９でもって、積層構造の保護膜１０が構成され
ている。Reference numeral 7 is a thin film for identification means formed in the vicinity of the grounding conductive thin film 5A on the substrate 1, and is made up of arbitrary symbols, letters, etc. indicating the type name of the chip. It is formed of the same material as this with the conductive thin film 5 for terminals. An inorganic material film 8 is formed on the substrate 1 so as to cover the magnetic thin film 4, the conductive thin film 5 for terminals and the thin film 7 for identification means, and a transparent body such as a SiO 2 film is used. Reference numeral 9 is an organic material film formed so as to cover the inorganic material film 8, and an opaque material such as a polyimide resin is used. The inorganic material film 8 and the organic material film 9 form a protective film 10 having a laminated structure.
【００１２】ここで、有機材料膜９は識別手段用薄膜７
上では除かれるように形成されており、これによって識
別手段用薄膜７は透明体である無機材料膜８のみで被覆
されて、読み取りが可能になるように図られている。こ
のように、識別手段用薄膜７上にのみ不透明体である有
機材料膜９を存在させない構造は、後述のような方法で
製造される。Here, the organic material film 9 is the identification means thin film 7.
It is formed so as not to be removed above, so that the identification means thin film 7 is covered only with the inorganic material film 8 that is a transparent body so that it can be read. In this way, the structure in which the organic material film 9 that is an opaque body does not exist only on the identification means thin film 7 is manufactured by the method described below.
【００１３】図３は図１及び図２の本実施例の磁気抵抗
素子に用いられた基板１の製造方法を示すものである。
本実施例で用いられる感光性ガラス基板１は、例えばＳ
ｉＯ2 −Ｌｉ2 Ｏ−Ａｌ2 Ｏ3 系ガラスを主成分とし
て、これに感光性金属として少量の金、銀を、また増感
剤として少量のＣｅＯ2 を含んだ基板が出発材料として
用いられており、この基板は紫外線を照射して結晶化さ
せるとこの結晶化された部分が他の部分よりも酸によっ
てずっと速く溶けるという性質を有し、さらに熱処理を
加えることによって全く新しい特性を持つ結晶化ガラス
に変質するという特徴を有している。従って、このよう
な特徴を利用して基板１を製造する。FIG. 3 shows a method of manufacturing the substrate 1 used in the magnetoresistive element of this embodiment shown in FIGS.
The photosensitive glass substrate 1 used in this embodiment is, for example, S
A substrate containing iO 2 -Li 2 O-Al 2 O 3 based glass as a main component, a small amount of gold and silver as a photosensitive metal, and a small amount of CeO 2 as a sensitizer was used as a starting material. This substrate has the property that when it is crystallized by irradiating it with ultraviolet rays, this crystallized part dissolves much faster with acid than other parts, and it has a completely new characteristic when heat treatment is applied. It has the characteristic of being transformed into synthetic glass. Therefore, the substrate 1 is manufactured by utilizing such characteristics.
【００１４】まず、工程［Ａ］で上記のような成分を有
する基板１１を出発材料として用い、所望面がパターン
部１２でマスクされたフォトマスク１３を通じて矢印の
ように紫外線を照射する。これにより、パターン部１２
以外のフォトマスク１３を通過した紫外線によって、基
板１１に部分的に潜像１１Ａが形成される。この潜像１
１Ａは後で貫通孔が形成される部分となる。次に、工程
［Ｂ］のように基板１１を約４５０℃乃至６００℃で熱
処理（一次結晶化処理）することにより、潜像１１Ａは
結晶化部分１１Ｂに変化する。続いて、工程［Ｃ］のよ
うに基板１１をフッ酸溶液に浸すことにより、結晶化部
分１１Ｂがエッチングされて貫通孔２が形成される。次
に、工程［Ｄ］のように基板１１を安定化（結晶化ガラ
スにする）するために矢印のように再び紫外線を照射し
た後、工程［Ｅ］のように基板１１を再度約８００℃乃
至９００℃で熱処理（二次結晶化処理）することによ
り、基板１１の機械的強度は大きくなる。これによっ
て、化学的及び電気的に安定化された基板１が得られ
る。First, in the step [A], the substrate 11 having the above components is used as a starting material, and ultraviolet rays are irradiated as shown by an arrow through the photomask 13 whose desired surface is masked by the pattern portion 12. Thereby, the pattern portion 12
The latent image 11A is partially formed on the substrate 11 by the ultraviolet rays that have passed through the photomask 13 other than the above. This latent image 1
1A will be a portion where a through hole will be formed later. Next, as in the step [B], the latent image 11A is changed to the crystallized portion 11B by heat-treating the substrate 11 at about 450 ° C. to 600 ° C. (primary crystallization treatment). Subsequently, as in the step [C], the crystallized portion 11B is etched by immersing the substrate 11 in a hydrofluoric acid solution to form the through hole 2. Next, as in step [D], the substrate 11 is irradiated with ultraviolet rays again in order to stabilize (make it into crystallized glass), and then the substrate 11 is again heated to approximately 800 ° C. as in step [E]. The heat treatment (secondary crystallization treatment) at a temperature of 900 ° C. to 900 ° C. increases the mechanical strength of the substrate 11. This results in a chemically and electrically stabilized substrate 1.
【００１５】次に、図４を参照してこのようにして得ら
れた基板１を用いた本実施例の磁気抵抗素子の製造方法
を説明する。まず、工程［Ａ］のように基板１の貫通孔
２に導電性ペーストあるいは導電性フリットを充填した
後、焼成して導電材３を形成する。この導電材３の基板
１の表裏の面は基板１の表裏の面に一致するように平坦
に形成される。続いて、工程［Ｂ］のように基板１上に
材料膜を付着した後微細エッチング加工によって磁性薄
膜４を形成した後、工程［Ｃ］のように基板１上に端子
用導電薄膜を形成する材料膜１５を付着する。次に、工
程［Ｄ］のように微細エッチング加工によって端子用導
電薄膜５と共に、任意な記号、文字等からなる識別手段
用薄膜７を形成する。端子用導電薄膜５は磁性薄膜４と
導通するように形成されると共に、識別手段用薄膜７は
既に形成されている接地用の導電薄膜５Ａの近傍に形成
される。Next, a method of manufacturing the magnetoresistive element of this embodiment using the substrate 1 thus obtained will be described with reference to FIG. First, as in the step [A], the through holes 2 of the substrate 1 are filled with a conductive paste or a conductive frit and then baked to form the conductive material 3. The front and back surfaces of the substrate 1 of the conductive material 3 are formed flat so as to match the front and back surfaces of the substrate 1. Then, after a material film is attached on the substrate 1 as in the step [B], a magnetic thin film 4 is formed by a fine etching process, and then a conductive thin film for terminals is formed on the substrate 1 as in the step [C]. The material film 15 is attached. Next, as in the step [D], the identification means thin film 7 including arbitrary symbols, characters, etc. is formed together with the terminal conductive thin film 5 by fine etching. The terminal conductive thin film 5 is formed so as to be electrically connected to the magnetic thin film 4, and the identification means thin film 7 is formed near the grounding conductive thin film 5A already formed.
【００１６】続いて、工程［Ｅ］のように磁性薄膜４、
端子用導電薄膜５及び識別手段用薄膜７を被覆するよう
に、ＳｉＯ2 膜のような透明体からなる無機材料膜８を
形成する。次に、工程［Ｆ］のように識別手段用薄膜７
上を除いて無機材料膜８を被覆するように、エポキシ系
あるいはポリイミド系樹脂のような不透明体からなる有
機材料膜９を形成する。この構造は、エポキシ系のよう
なものであれば、印刷法を用いることができ、識別手段
用薄膜７上を除いて形成することが簡単にできる。ある
いはポリイミド系のようなものであれば、予め有機材料
膜９を識別手段用薄膜７上を含む基板１全面に付着した
のち、微細エッチング加工によって識別手段用薄膜７上
の有機材料膜９のみを除くようにすれば、簡単に得るこ
とができる。また、これによって、無機材料膜８及び有
機材料膜９からなる積層構造の保護膜１０が得られ、十
分な保護効果を発揮する。続いて、工程［Ｇ］のように
基板１の裏面に外部接続用導体６を形成することによ
り、図１及び図２の本実施例の磁気抵抗素子が得られ
る。Then, as in step [E], the magnetic thin film 4,
An inorganic material film 8 made of a transparent material such as a SiO 2 film is formed so as to cover the conductive thin film 5 for terminals and the thin film 7 for identification means. Next, as in the step [F], the identification means thin film 7 is formed.
An organic material film 9 made of an opaque material such as an epoxy resin or a polyimide resin is formed so as to cover the inorganic material film 8 except for the above. If this structure is of an epoxy type, a printing method can be used, and it can be easily formed except on the identification means thin film 7. Alternatively, in the case of a polyimide-based material, after the organic material film 9 is attached to the entire surface of the substrate 1 including the identification means thin film 7 in advance, only the organic material film 9 on the identification means thin film 7 is finely etched. If it is excluded, it can be easily obtained. Further, as a result, the protective film 10 having a laminated structure including the inorganic material film 8 and the organic material film 9 is obtained, and a sufficient protective effect is exhibited. Subsequently, as in the step [G], the external connection conductor 6 is formed on the back surface of the substrate 1 to obtain the magnetoresistive element of this embodiment shown in FIGS. 1 and 2.
【００１７】このような本実施例によれば、基板１上に
端子用導電薄膜５を形成する際に、この端子用導電薄膜
５と同材料によって識別手段用薄膜７を端子用導電薄膜
５と共に形成し、かつ識別手段用薄膜７上では不透明体
からなる有機材料膜９が除かれているので、識別手段用
薄膜７は不透明体の保護膜で被覆されていないため、容
易に読み取ることができるようになる。また、本実施例
によれば、識別手段用薄膜７は基板１の隅部に形成され
ている接地用の導電薄膜５Ａの近傍に形成しており、基
板１の中央部あるいはこの近くの部分には形成しないの
で、素子動作に悪影響を及ぼすことはなくなる。すなわ
ち、識別手段用薄膜７を磁性薄膜４あるいは端子用導電
薄膜５に電位のある基板１の中央部あるいはこの近くの
部分に形成した場合には、マイグレーションを引き起こ
して素子動作に悪影響を及ぼすおそれが生ずるが、識別
手段用薄膜７は接地用の導電薄膜５Ａに近傍に形成する
ことによって、このような弊害を防止することができ
る。さらに、本実施例によれば、識別手段用薄膜７が容
易に読み取れることにより、基板１が不透明材料を用い
た場合でも、チップの上下、左右の位置の識別も容易に
できるという効果も得られるようになる。According to this embodiment, when the terminal conductive thin film 5 is formed on the substrate 1, the identification means thin film 7 and the terminal conductive thin film 5 are made of the same material as the terminal conductive thin film 5. Since the organic material film 9 made of an opaque material is removed from the formed identification means thin film 7, the identification means thin film 7 is not covered with the opaque protective film, and thus can be easily read. Like Further, according to this embodiment, the identification means thin film 7 is formed in the vicinity of the grounding conductive thin film 5A formed in the corner of the substrate 1, and in the central portion of the substrate 1 or in the vicinity thereof. Is not formed, the device operation is not adversely affected. That is, when the identification means thin film 7 is formed on the magnetic thin film 4 or the terminal conductive thin film 5 at the central portion of the substrate 1 having a potential or in the vicinity thereof, there is a risk of causing migration and adversely affecting the element operation. Although it occurs, such an adverse effect can be prevented by forming the identification means thin film 7 in the vicinity of the grounding conductive thin film 5A. Further, according to the present embodiment, since the thin film 7 for identifying means can be easily read, it is possible to easily identify the vertical and horizontal positions of the chip even when the substrate 1 is made of an opaque material. Like
【００１８】なお、本実施例では識別手段用薄膜７は端
子用導電薄膜５と同材料によってこの端子用導電薄膜５
と共に形成する例で示したが、これに限らず磁性薄膜４
と同材料によってこの磁性薄膜４と共に形成するように
しても良い。また、本実施例では基板１として貫通孔２
を形成した形状のものを用いた例で説明したが、貫通孔
２は不要にして基板１の同一面に外部接続用導体６及び
磁性薄膜４を形成するようにしても良い。さらに、基板
１の形状は長方形に限らず、また貫通孔２の断面形状も
円形に限ることはない。同様にして、端子用導電薄膜５
は基板１の四隅部に形成した例で説明したが、これに限
ることはない。In this embodiment, the identification means thin film 7 is made of the same material as the terminal conductive thin film 5, and the terminal conductive thin film 5 is made of the same material.
Although the example of forming the magnetic thin film with the magnetic thin film
It may be formed together with this magnetic thin film 4 by the same material. Moreover, in this embodiment, the through hole 2 is used as the substrate 1.
Although the example in which the through-hole 2 is formed is used, the through-hole 2 may be omitted and the external connection conductor 6 and the magnetic thin film 4 may be formed on the same surface of the substrate 1. Further, the shape of the substrate 1 is not limited to the rectangular shape, and the sectional shape of the through hole 2 is not limited to the circular shape. Similarly, the conductive thin film 5 for terminals
In the above description, the example is described in which it is formed at the four corners of the substrate 1, but the invention is not limited to this.
【００１９】図５は本実施例の磁気抵抗素子を混成（ハ
イブリッド）ＩＣに用いる磁気抵抗素子に適用した例を
示すものである。混成ＩＣ基板２１としては図３に示し
たような方法で製造された、図６のような形状の感光性
ガラス基板２１を用いるようにする。この場合、基板２
１に貫通孔２２Ａ及び２２Ｂを形成して、基板２１をリ
ードフレート２３にボンディングすると共に、各貫通孔
２２Ａ及び２２Ｂに各々図１の磁気抵抗素子２０及び信
号処理用のＩＣ２４を実装してリードフレーム２３にボ
ンディングする。磁気抵抗素子２０の表面にはパッド２
０Ａが形成されると共に、ＩＣ２４の表面にはパッド２
４Ａが形成され、各パッド２０Ａと２４Ａ間、パッド２
０Ａとリードフレーム２３間、パッド２４Ａとリードフ
レーム２３間はワイヤ２５がボンディングされる。そし
て、全体は樹脂２６でモールディングされる。なお、こ
の場合は、各貫通孔２２Ａ，２２Ｂを形成する基板２１
の高さ寸法は、磁気抵抗素子２０及びＩＣ２４の厚さ寸
法よりも僅か大きく形成したものを用いるようにする。FIG. 5 shows an example in which the magnetoresistive element of this embodiment is applied to a magnetoresistive element used in a hybrid (hybrid) IC. As the hybrid IC substrate 21, a photosensitive glass substrate 21 having a shape as shown in FIG. 6 manufactured by the method shown in FIG. 3 is used. In this case, the substrate 2
1 is formed with through holes 22A and 22B, the substrate 21 is bonded to the lead plate 23, and the magnetoresistive element 20 and the signal processing IC 24 of FIG. 1 are mounted in the through holes 22A and 22B, respectively. Bond to 23. The pad 2 is provided on the surface of the magnetoresistive element 20.
0A is formed and the pad 2 is formed on the surface of the IC 24.
4A is formed, and between each pad 20A and 24A, pad 2
Wires 25 are bonded between 0A and the lead frame 23 and between the pad 24A and the lead frame 23. Then, the whole is molded with the resin 26. In this case, the substrate 21 forming the through holes 22A and 22B is formed.
The height dimension of is formed to be slightly larger than the thickness dimension of the magnetoresistive element 20 and the IC 24.
【００２０】このような混成ＩＣによれば、樹脂モール
ディングを行っても、高さ寸法がＩＣ２４の厚さ寸法よ
りも僅か大きく設定されている基板２１を用いることに
より、ＩＣ２４のパッド２４Ａにボンディングされたワ
イヤ２５が、ＩＣ２４のチップ自身にタッチしてエッジ
ショートを引き起こすのを防止できるという効果が得ら
れる。しかも、基板２１として感光性ガラスを用いるこ
とにより、各貫通孔２２Ａ，２２Ｂの加工は簡単に行え
るので、特にコストアップを伴うこともない。According to such a hybrid IC, even if resin molding is performed, by using the substrate 21 whose height dimension is set slightly larger than the thickness dimension of the IC 24, it is bonded to the pad 24A of the IC 24. It is possible to prevent the wire 25 from touching the chip itself of the IC 24 and causing an edge short circuit. Moreover, since the through holes 22A and 22B can be easily processed by using the photosensitive glass as the substrate 21, there is no particular increase in cost.
【００２１】この点、図８に示したような従来の混成Ｉ
Ｃであると、リードフレーム３３にボンディングされた
磁気抵抗素子３０及びＩＣ３４が樹脂３６でモールディ
ングされる際、ＩＣ３４のパッド３４Ａにボンディング
されたワイヤ３５が、矢印の部分でＩＣ３４のチップ自
身にタッチしてエッジショートを引き起こし易いという
欠点があった。この欠点を改善するには、図９に示した
ように混成ＩＣ基板４１を用いてこの基板４１上に磁気
抵抗素子３０及びＩＣ３４を実装して、基板４１をリー
ドフレーム３３にボンディングすることが考えられてい
るが、この構造であると混成ＩＣ基板４１に磁気抵抗素
子３０及びＩＣ３４を実装する面積以外に、厚膜抵抗パ
ターン及び接続回路を設ける面積も必要になるため、実
用的でないという欠点が生じていた。In this respect, the conventional hybrid I as shown in FIG.
When C, when the magnetoresistive element 30 and the IC 34 bonded to the lead frame 33 are molded by the resin 36, the wire 35 bonded to the pad 34A of the IC 34 touches the chip itself of the IC 34 at the arrow portion. There is a drawback that it is easy to cause edge short circuit. In order to improve this drawback, it is conceivable to mount the magnetoresistive element 30 and the IC 34 on the mixed IC substrate 41 as shown in FIG. 9 and bond the substrate 41 to the lead frame 33. However, with this structure, in addition to the area for mounting the magnetoresistive element 30 and the IC 34 on the hybrid IC substrate 41, an area for providing the thick film resistance pattern and the connection circuit is also required, which is not practical. It was happening.
【００２２】図７は図５の混成ＩＣの変形例を示す平面
図で、基板２１の表面に導電ペーストを印刷、焼成して
導電薄膜２７を形成して、この導電薄膜２７を介して磁
気抵抗素子２０及びＩＣ２４の各パッド２０Ａ，２４Ａ
にワイヤ２５をボンディングするようにした構造を示す
ものである。このような変形例によっても図５と同様な
効果を得ることができる。FIG. 7 is a plan view showing a modified example of the hybrid IC of FIG. 5, in which a conductive paste is printed on the surface of the substrate 21 and fired to form a conductive thin film 27, and a magnetic resistance is provided via the conductive thin film 27. Each pad 20A, 24A of the element 20 and the IC 24
It shows a structure in which the wire 25 is bonded to the wire. Even with such a modification, the same effect as in FIG. 5 can be obtained.
【００２３】なお、混成ＩＣは磁気抵抗素子及びＩＣを
組み合わせた例で説明したが、この組み合わせに限ら
ず、磁気抵抗素子同士あるいはＩＣ同士を組み合わせる
ようにしても良い。また、基板としては感光性ガラスに
限らず、成形樹脂を用いるようにしてもよい。Although the hybrid IC has been described as an example in which the magnetoresistive element and the IC are combined, the invention is not limited to this combination, and the magnetoresistive elements or the ICs may be combined. Further, the substrate is not limited to the photosensitive glass, and molding resin may be used.
【００２４】[0024]
【発明の効果】請求項１に係わる本発明によれば、基板
上に磁性薄膜あるいは端子用導電薄膜と同材料からなる
識別手段用薄膜を該当したいずれかの薄膜と共に形成
し、かつ上記識別手段用薄膜上では不透明体からなる保
護膜が除かれているので、磁性薄膜及び端子用導電薄膜
上に保護膜が存在していても、磁性薄膜あるいは端子用
導電薄膜と同材料で共に形成した識別手段用薄膜が容易
に読み取れるようにすることができる。請求項２に係わ
る本発明によれば、識別手段用薄膜は、上記基板上の隅
部近くに形成されている接地用の導電薄膜の近傍に形成
されているので、請求項１と同様な効果を得ることがで
きる。According to the present invention according to claim 1, a thin film for identification means made of the same material as a magnetic thin film or a conductive thin film for terminals is formed on a substrate together with any of the corresponding thin films, and the identification means is provided. Since the protective film made of an opaque material is removed from the thin film for identification, even if there is a protective film on the magnetic thin film and the conductive thin film for terminals, it can be identified with the same material as the magnetic thin film or the conductive thin film for terminals. The device thin film can be easily read. According to the second aspect of the present invention, the identification means thin film is formed in the vicinity of the grounding conductive thin film formed near the corner of the substrate. Can be obtained.
【図１】本発明の磁気抵抗素子の実施例を示す平面図で
ある。FIG. 1 is a plan view showing an embodiment of a magnetoresistive element of the present invention.
【図２】図１の部分的構造を示す断面図である。FIG. 2 is a sectional view showing a partial structure of FIG.
【図３】本実施例の磁気抵抗素子に用いる基板の製造方
法を示す工程図である。FIG. 3 is a process drawing showing the method of manufacturing the substrate used for the magnetoresistive element of the present embodiment.
【図４】本実施例の磁気抵抗素子の製造方法を示す工程
図である。FIG. 4 is a process drawing showing the method of manufacturing the magnetoresistive element of the present embodiment.
【図５】本実施例の磁気抵抗素子を適用した混成（ハイ
ブリッド）ＩＣを示す断面図である。FIG. 5 is a sectional view showing a hybrid (hybrid) IC to which the magnetoresistive element of this embodiment is applied.
【図６】図５の混成ＩＣに用いる基板を示す断面図であ
る。6 is a cross-sectional view showing a substrate used in the hybrid IC of FIG.
【図７】図５の混成ＩＣの変形例を示す平面図である。FIG. 7 is a plan view showing a modified example of the hybrid IC of FIG.
【図８】従来の混成ＩＣを示す断面図である。FIG. 8 is a cross-sectional view showing a conventional hybrid IC.
【図９】従来の他の混成ＩＣを示す断面図である。FIG. 9 is a cross-sectional view showing another conventional hybrid IC.
１，２１ 基板 ２，２２Ａ，２２Ｂ 貫通孔 ３ 導電材 ４ 磁性薄膜 ５ 端子用導電薄膜 ５Ａ 接地用の導電薄膜 ７ 識別手段用薄膜 ８ 無機材料膜（透明体） ９ 有機材料膜（不透明体） １０ 保護膜 １３ フォトマスク ２０ リードフレーム ２４ ＩＣ ２５ ボンディングワイヤ ２６ 樹脂 ２７ 導電薄膜 1, 21 Substrate 2, 22A, 22B Through Hole 3 Conductive Material 4 Magnetic Thin Film 5 Conductive Thin Film for Terminal 5A Conductive Thin Film for Grounding 7 Thin Film for Identification Means 8 Inorganic Material Film (Transparent Body) 9 Organic Material Film (Opaque Body) 10 Protective film 13 Photomask 20 Lead frame 24 IC 25 Bonding wire 26 Resin 27 Conductive thin film
Claims (2)
及び端子用導電薄膜と、上記磁性薄膜及び端子用導電薄
膜上に形成された透明体あるいは不透明体からなる保護
膜とを有する磁気抵抗素子において、上記基板上に上記
磁性薄膜あるいは端子用導電薄膜と同材料からなる識別
手段用薄膜を該当したいずれかの薄膜と共に形成し、か
つ上記識別手段用薄膜上では不透明体からなる保護膜が
除かれていることを特徴とする磁気抵抗素子。1. A magnet having a substrate, a magnetic thin film and a conductive thin film for terminals formed on the substrate, and a protective film formed of a transparent body or an opaque body formed on the magnetic thin film and conductive thin film for terminals. In the resistance element, a thin film for identification means made of the same material as the magnetic thin film or the conductive thin film for terminals is formed on the substrate together with any thin film corresponding thereto, and a protective film made of an opaque body on the thin film for identification means. The magnetoresistive element is characterized in that
部近くに形成されている接地用の導電薄膜の近傍に形成
したことを特徴とする請求項１記載の磁気抵抗素子。2. The magnetoresistive element according to claim 1, wherein the identification means thin film is formed in the vicinity of a grounding conductive thin film formed near a corner of the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6021539A JP3018132B2 (en) | 1994-02-18 | 1994-02-18 | Magnetoresistive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6021539A JP3018132B2 (en) | 1994-02-18 | 1994-02-18 | Magnetoresistive element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07231128A true JPH07231128A (en) | 1995-08-29 |
| JP3018132B2 JP3018132B2 (en) | 2000-03-13 |
Family
ID=12057782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6021539A Expired - Fee Related JP3018132B2 (en) | 1994-02-18 | 1994-02-18 | Magnetoresistive element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3018132B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210112520A (en) * | 2020-03-05 | 2021-09-15 | 한국전자통신연구원 | Radio frequency weak magnetic field detection sensor and manufacturing method of the same |
-
1994
- 1994-02-18 JP JP6021539A patent/JP3018132B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210112520A (en) * | 2020-03-05 | 2021-09-15 | 한국전자통신연구원 | Radio frequency weak magnetic field detection sensor and manufacturing method of the same |
| US11699549B2 (en) | 2020-03-05 | 2023-07-11 | Electronics And Telecommunications Research Institute | Radio frequency weak magnetic field detection sensor and method of manufacturing the same |
| US11955271B2 (en) | 2020-03-05 | 2024-04-09 | Electronics And Telecommunications Research Institute | Radio frequency weak magnetic field detection sensor and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3018132B2 (en) | 2000-03-13 |
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