JPH07211511A - Positive temperature coefficient thermistor and its production - Google Patents
Positive temperature coefficient thermistor and its productionInfo
- Publication number
- JPH07211511A JPH07211511A JP348094A JP348094A JPH07211511A JP H07211511 A JPH07211511 A JP H07211511A JP 348094 A JP348094 A JP 348094A JP 348094 A JP348094 A JP 348094A JP H07211511 A JPH07211511 A JP H07211511A
- Authority
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- Prior art keywords
- titanate
- barium
- site
- temperature coefficient
- mol
- Prior art date
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Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は特定の温度で抵抗値が急
激に増大する正特性サーミスタおよびその製造方法に関
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a positive temperature coefficient thermistor whose resistance value rapidly increases at a specific temperature and a method for manufacturing the thermistor.
【0002】[0002]
【従来の技術】チタン酸バリウムにY,La,Ceなど
の希土類元素あるいはNb,Taなどの遷移元素を微量
添加すると半導体化し、そのキュリー点付近の温度で正
の抵抗温度特性(以下PTC特性と記す)を示すことは
従来より広く知られている。そのPTC特性を利用し
て、過電流保護用素子、温度制御用素子、モータ起動用
素子、ヒータ用といった様々な用途に応用されてきてい
る。2. Description of the Related Art Barium titanate becomes a semiconductor when a rare earth element such as Y, La, Ce or a transition element such as Nb, Ta is added in a trace amount, and has a positive resistance temperature characteristic (hereinafter referred to as PTC characteristic) at a temperature near its Curie point. It is widely known from the past. Utilizing the PTC characteristics, it has been applied to various applications such as an overcurrent protection element, a temperature control element, a motor starting element, and a heater.
【0003】また、このような用途の広がりに応じて要
望される電気特性も多様になってきている。特にヒータ
用素子では、通常スイッチング温度と呼ばれる発熱開始
温度の高温化が要求され、チタン酸バリウムのバリウム
サイトを一部鉛に置換したチタン酸バリウム鉛系材料に
よるスイッチング温度が200〜300℃のものが一般
に使用されている。In addition, the required electrical characteristics have been diversified according to the spread of such applications. In particular, heater elements are required to have a higher heat generation start temperature, which is usually called a switching temperature, and have a switching temperature of 200 to 300 ° C due to barium lead titanate-based material in which barium sites of barium titanate are partially replaced with lead. Is commonly used.
【0004】ところで、このような正特性サーミスタの
製造方法としては、配合された原料をボールミルやディ
スパーミルなどを用いて混合し、フィルタープレス、ド
ラムドライヤーなどにより造粒し、所望の形に成形した
後、通常1300〜1400℃の高温で本焼成を行い、
得られた焼結体に電極を塗布し最終製品とするものであ
る。By the way, as a method for producing such a positive temperature coefficient thermistor, the blended raw materials are mixed using a ball mill, a disper mill or the like, granulated by a filter press, a drum dryer or the like, and molded into a desired shape. After that, the main firing is usually performed at a high temperature of 1300 to 1400 ° C,
An electrode is applied to the obtained sintered body to obtain a final product.
【0005】[0005]
【発明が解決しようとする課題】ヒータ用素子では、通
常スイッチング温度と呼ばれる発熱開始温度の高温化が
要求され、チタン酸バリウムのバリウムサイトを一部鉛
に置換し、チタン酸バリウムのキュリー点(120℃)
を高温側に移動させたチタン酸バリウム鉛系材料による
スイッチング温度が200〜300℃のものが一般に使
用されている。鉛の置換によってスイッチング温度を高
温側に移動させることはできるが、焼成時における鉛の
揮散が大きく、セラミックの焼結性に問題があり、緻密
で均質なセラミックが得られない。その結果特性のばら
つきが大きく、電気特性においてもスイッチング温度を
越えた後の抵抗温度係数が小さく電圧による抵抗値変動
が大きいこととともに耐電圧性が悪い。In the heater element, it is usually required to raise the heat generation start temperature, which is usually called the switching temperature, and the barium site of barium titanate is partially replaced with lead, so that the Curie point of barium titanate ( 120 ° C)
A barium lead titanate-based material having a switching temperature of 200 to 300 ° C. is generally used. Although it is possible to move the switching temperature to a higher temperature side by substitution of lead, lead volatilization during firing is large and there is a problem in the sinterability of the ceramic, so that a dense and homogeneous ceramic cannot be obtained. As a result, there are large variations in characteristics, the electrical characteristics also have a small temperature coefficient of resistance after the switching temperature is exceeded, and large variations in resistance value due to voltage, and poor withstand voltage.
【0006】また、抵抗値変化幅が小さいため、熱暴走
による素子の破壊の危険性もあった。抵抗温度係数およ
び抵抗値変化幅が大きければ大きいほど電圧変動などの
外的要因などで素体の抵抗値が変動しても、その温度が
大きく変動することがなく目的とする温度を安定して得
ることができる。Further, since the change width of the resistance value is small, there is a risk that the element may be broken due to thermal runaway. The larger the temperature coefficient of resistance and the variation range of the resistance value, the more stable the target temperature will be, even if the resistance value of the element body fluctuates due to external factors such as voltage fluctuations. Obtainable.
【0007】本発明はこれらの欠点を改善した抵抗温度
係数および抵抗変化幅が大きく、電圧依存性の小さい耐
電圧にすぐれた正特性サーミスタを提供することを目的
としたものである。It is an object of the present invention to provide a positive temperature coefficient thermistor having a large temperature coefficient of resistance and a large resistance change width and improved withstand voltage having a small voltage dependence, which are improved in these drawbacks.
【0008】[0008]
【課題を解決するための手段】この課題を解決するため
に本発明では、組成をチタン酸バリウム、チタン酸鉛、
チタン酸カルシウムを主成分とし、主成分に対し半導体
化剤として、Y,La,Ce,Nb,Bi,Sb,W,
Thの元素のうちから少なくとも1種類を酸化物として
添加含有させ、さらにSiO2,Mnを酸化物の形で含
有させ、さらにAl2O3を添加含有させ、チタン酸バリ
ウム、チタン酸鉛、チタン酸カルシウムよりなる主成分
のうち、バリウムサイトの組成比率がチタンサイトに対
して0.970〜0.997の範囲でチタンサイトより
少なくすることにより安定した正特性サーミスタ素子を
得ることができる。In order to solve this problem, in the present invention, the composition is barium titanate, lead titanate,
Y, La, Ce, Nb, Bi, Sb, W
At least one of the elements of Th is added and contained as an oxide, SiO 2 and Mn are further contained in the form of an oxide, and Al 2 O 3 is further added and contained, and barium titanate, lead titanate, titanium A stable positive temperature coefficient thermistor element can be obtained by reducing the composition ratio of barium sites to 0.970 to 0.997 with respect to titanium sites among the main components composed of calcium acid.
【0009】さらに、チタン酸バリウムを40〜95モ
ル%、チタン酸鉛を4〜40モル%、チタン酸カルシウ
ムを1〜20モル%を主成分とし、主成分に対し半導体
化剤として、Y,La,Ce,Nb,Bi,Sb,W,
Thの元素のうち少なくとも1種類を酸化物として0.
1〜0.4モル%添加含有させ、SiO2を1.0〜
5.0モル%、Mnを酸化物として0.01〜0.15
モル%、Al2O3を0.1〜2.0モル%含有させ、チ
タン酸バリウム、チタン酸鉛、チタン酸カルシウムより
なる主成分のうち、バリウムサイトの組成比率がチタン
サイトに対して0.970〜0.997の範囲でチタン
サイトより少なくすることにより効果がある。Further, barium titanate is 40 to 95 mol%, lead titanate is 4 to 40 mol%, and calcium titanate is 1 to 20 mol% as main components. La, Ce, Nb, Bi, Sb, W,
At least one of the Th elements is used as an oxide, and
Addition of 1 to 0.4 mol% and addition of SiO 2 of 1.0 to
5.0 mol%, 0.01 to 0.15 with Mn as oxide
% Of Al 2 O 3 and barium titanate, lead titanate, and calcium titanate. In the range of 0.970 to 0.997, it is effective to reduce the number of titanium sites.
【0010】なお、バリウムサイトの組成比率をチタン
サイトより少なくするために、その製造工程上において
は、バリウムサイトとチタンサイトの組成比を単に0.
970〜0.997:1とはじめの配合時にずらしても
よいし、組成比1:1で仮焼した後、酸化チタンを主成
分1モルに対して0.003〜0.030モル添加して
も効果がある。In order to make the composition ratio of barium site smaller than that of titanium site, the composition ratio of barium site and titanium site is simply set to 0.
It may be shifted at the time of the first blending to 970 to 0.997: 1, or after calcining at a composition ratio of 1: 1 and adding 0.003 to 0.030 mol of titanium oxide to 1 mol of the main component. Is also effective.
【0011】[0011]
【作用】本発明においてバリウムサイトの組成比率をチ
タンサイトに対して0.970〜0.997にすること
により、過剰になった主成分のチタンとバリウムの化合
物およびチタンと焼結助剤として添加した二酸化珪素と
の化合物が生成することによって焼結が促進され、緻密
で安定な正特性サーミスタを得ることができる。それに
よって電気特性においても、抵抗温度係数、抵抗値変化
幅の大きい電圧依存性の小さい、電圧変動などの外的要
因などで素体の抵抗値が変動してもその温度が大きく変
動することがなく目的とする温度を安定して得ることが
できるなど優れた正特性サーミスタを得ることができ
る。In the present invention, by adjusting the composition ratio of barium site to 0.970 to 0.997 with respect to titanium site, the compound of titanium and barium as the main components and titanium and the sintering additive which are in excess are added. Sintering is promoted by the formation of the compound with the silicon dioxide, and a dense and stable positive temperature coefficient thermistor can be obtained. As a result, even in the electrical characteristics, even if the resistance value of the element body fluctuates due to external factors such as the resistance temperature coefficient, the resistance value variation range is large, the voltage dependence is small, and the voltage variation, the temperature may fluctuate significantly. It is possible to obtain an excellent positive temperature coefficient thermistor, because the desired temperature can be stably obtained without the need.
【0012】[0012]
【実施例】以下、本発明の実施例について説明する。EXAMPLES Examples of the present invention will be described below.
【0013】(実施例1)炭酸バリウム(BaC
O3)、酸化チタン(TiO2)、酸化鉛(PbO)、お
よびチタン酸カルシウム(CaTiO3)を主成分と
し、半導体化剤として、Y,La,Ce,Nb,Bi,
Sb,W,Thの元素のうち少なくとも1つの元素の酸
化物とSiO2,MnO2およびAl2O3の各原料を用い
て、 (Ba0.7Pb0.2Ca0.1)xTiyO3+0.002M
+0.002SiO2+0.01Al2O3+0.001
Mn (M:半導体化剤の酸化物)の組成になるように秤量す
る。なお、この組成のx,yについては(表1)の比に
なるように調整する。Example 1 Barium carbonate (BaC)
O 3 ), titanium oxide (TiO 2 ), lead oxide (PbO), and calcium titanate (CaTiO 3 ) as the main components, and Y, La, Ce, Nb, Bi,
(Ba 0.7 Pb 0.2 Ca 0.1 ) xTiyO 3 + 0.002M is obtained by using an oxide of at least one element of Sb, W, and Th and each raw material of SiO 2 , MnO 2, and Al 2 O 3.
+ 0.002SiO 2 + 0.01Al 2 O 3 +0.001
It is weighed so as to have a composition of Mn (M: oxide of a semiconducting agent). Note that x and y of this composition are adjusted so as to have the ratio of (Table 1).
【0014】次に秤量物をボールミルにて湿式混合す
る。次にこの混合物を乾燥した後、1100℃で2時間
仮焼する。その後、この仮焼粉をボールミルにて湿式粉
砕する。この粉砕物を乾燥した後、結合剤としてポリビ
ニルアルコールを5%加え造粒し、600kg/cm2の圧
力でプレス成形した。この成形体を空気中で約1300
℃にて1時間焼成し、直径12mm、厚さ3.0mmの円板
状の正特性サーミスタを得た。さらにこの焼結体にNi
めっきを施した後、Agペーストを塗布、焼きつけし電
極とした。Next, the weighed materials are wet mixed in a ball mill. The mixture is then dried and then calcined at 1100 ° C. for 2 hours. Then, the calcined powder is wet-milled with a ball mill. After drying the pulverized product, 5% of polyvinyl alcohol was added as a binder, the mixture was granulated, and press-molded at a pressure of 600 kg / cm 2 . This molded body is about 1300 in air
Firing at 1 ° C. for 1 hour gave a disk-shaped positive temperature coefficient thermistor having a diameter of 12 mm and a thickness of 3.0 mm. Furthermore, Ni is added to this sintered body.
After plating, Ag paste was applied and baked to form an electrode.
【0015】次に、このようにして得られた試料の各電
気特性を測定する。その抵抗温度特性曲線より、常温抵
抗値(R25)、抵抗温度係数(α)、抵抗値変化幅
(Ψ)(Ψ=Log10(最大抵抗値/最小抵抗値))を
測定した。その結果を(表1)に示す。Next, the electrical characteristics of the sample thus obtained are measured. From the resistance temperature characteristic curve, the room temperature resistance value (R 25 ), the resistance temperature coefficient (α), and the resistance value change width (Ψ) (Ψ = Log 10 (maximum resistance value / minimum resistance value)) were measured. The results are shown in (Table 1).
【0016】[0016]
【表1】 [Table 1]
【0017】これらの結果より、バリウムサイト(x)
とチタンサイト(y)の比x/yが0.970〜0.9
97の範囲にあると、抵抗温度係数(α)が大きく、抵
抗値変化幅(Ψ)も大きくPTC特性が優れていること
がわかる。From these results, barium site (x)
And titanium site (y) ratio x / y is 0.970 to 0.9
It can be seen that in the range of 97, the resistance temperature coefficient (α) is large, the resistance value change width (Ψ) is large, and the PTC characteristic is excellent.
【0018】(実施例2)実施例1と同様の原料を用い
て、(表2)の組成になるように秤量し、ボールミルに
て湿式混合する。次に、実施例1と同様に試料を作製
し、その電気特性を評価する。その結果を(表3)に示
す。(Example 2) The same raw materials as in Example 1 were used, weighed so as to have the composition shown in (Table 2), and wet mixed in a ball mill. Next, a sample is prepared in the same manner as in Example 1 and its electrical characteristics are evaluated. The results are shown in (Table 3).
【0019】[0019]
【表2】 [Table 2]
【0020】[0020]
【表3】 [Table 3]
【0021】(表2)の試料番号1〜13については本
発明の範囲以外の組成のものを示しそれ以外は本発明の
範囲以内の組成である。(表3)から明らかなように、
組成が本発明の範囲内にある試料番号14〜24につい
ては、抵抗温度係数(α)および抵抗値変化幅(Ψ)が
大きく、PTC特性が優れていることがわかる。なお、
本発明の組成にさらにキュリー点移動のためにSrを添
加してもよい。Sample Nos. 1 to 13 in Table 2 have compositions outside the scope of the present invention, and the other compositions are within the scope of the present invention. As is clear from (Table 3),
It can be seen that Sample Nos. 14 to 24 having compositions within the range of the present invention have a large temperature coefficient of resistance (α) and a variation range of resistance value (Ψ) and excellent PTC characteristics. In addition,
Sr may be added to the composition of the present invention to move the Curie point.
【0022】(実施例3)実施例1と同様の原料を用い
て、 (Ba0.7Pb0.2Ca0.1)xTiyO3+0.002Y
2O3+0.002SiO2+0.01Al2O3+0.0
01Mn の組成になるように秤量する。次に実施例1と同様に試
料を作製する。ただし、(表4)の試料番号4〜8に示
したように秤量時にはx/y=1.000になるように
し、仮焼後にTiO2を添加し同様に試料を作製する。
次に、電気測定を測定する。(Example 3) Using the same raw material as in Example 1, (Ba 0.7 Pb 0.2 Ca 0.1 ) xTiyO 3 + 0.002Y
2 O 3 +0.002 SiO 2 +0.01 Al 2 O 3 +0.0
Weigh so that the composition is 01 Mn. Then, a sample is prepared in the same manner as in Example 1. However, as shown in sample numbers 4 to 8 in (Table 4), x / y = 1.000 is set at the time of weighing, and TiO 2 is added after calcination to prepare samples in the same manner.
Next, the electrical measurement is measured.
【0023】[0023]
【表4】 [Table 4]
【0024】この結果から明らかなように、仮焼後にT
iO2をx/y=1.000に対して0.003〜0.
03モル過剰に添加して、焼成後のバリウムサイト
(x)とチタンサイト(y)の比x/yが0.970〜
0.997の範囲にあっても実施例1と同様、抵抗温度
係数(α)が大きく、抵抗値変化幅(Ψ)も大きくPT
C特性が優れていることがわかる。As is clear from these results, T after calcination
iO 2 is 0.003 to 0.x for x / y = 1.000.
When added in an excess of 03 mol, the ratio x / y of barium site (x) and titanium site (y) after firing is 0.970 to.
Even in the range of 0.997, the resistance temperature coefficient (α) is large, and the resistance value change width (Ψ) is also large, as in the first embodiment.
It can be seen that the C characteristics are excellent.
【0025】[0025]
【発明の効果】以上詳述したように、本発明を用いるこ
とにより従来では得ることのできなかった抵抗温度係数
および抵抗値変化幅の大きな、PTC特性が優れた安定
な正特性サーミスタが得られることができるものであ
り、その工業的利用価値は大きい。As described in detail above, the use of the present invention makes it possible to obtain a stable positive temperature coefficient thermistor having a large resistance temperature coefficient and a large variation range of the resistance value, which cannot be obtained in the past, and which has an excellent PTC characteristic. It can be manufactured, and its industrial utility value is great.
Claims (3)
酸カルシウムを主成分とし、主成分に対し半導体化剤と
して、Y,La,Ce,Nb,Bi,Sb,W,Thの
元素のうち少なくとも1種類を酸化物として添加含有さ
せ、さらにSiO2,Mnを酸化物として含有させ、さ
らにAl2O3を含有させ、チタン酸バリウム、チタン酸
鉛、チタン酸カルシウムよりなる主成分のうち、バリウ
ムサイトの組成比率がチタンサイトに対して0.970
〜0.997の範囲でチタンサイトより少ない正特性サ
ーミスタ。1. Barium titanate, lead titanate, and calcium titanate as main components, and at least one of Y, La, Ce, Nb, Bi, Sb, W, and Th elements as a semiconducting agent for the main components. Barium among the main components of barium titanate, lead titanate, and calcium titanate, one of which is additionally contained as an oxide, SiO 2 and Mn are contained as oxides, and Al 2 O 3 is further contained. Site composition ratio is 0.970 with respect to titanium site
A positive temperature coefficient thermistor with less than titanium sites in the range of up to 0.997.
チタン酸鉛を4〜40モル%、チタン酸カルシウムを1
〜20モル%を主成分とし、主成分に対し半導体化剤と
して、Y,La,Ce,Nb,Bi,Sb,W,Thの
元素のうち少なくとも1種類を酸化物として0.1〜
0.4モル%添加含有させ、SiO2を1.0〜5.0
モル%、Mnを酸化物として0.01〜0.15モル
%、Al2O3を0.1〜2.0モル%含有させ、チタン
酸バリウム、チタン酸鉛、チタン酸カルシウムよりなる
主成分のうち、バリウムサイトの組成比率がチタンサイ
トに対して0.970〜0.997の範囲でチタンサイ
トより少ない正特性サーミスタ。2. Barium titanate in an amount of 40 to 95 mol%,
4-40 mol% lead titanate and 1 calcium titanate
.About.20 mol% as a main component, and as a semiconducting agent for the main component, at least one of Y, La, Ce, Nb, Bi, Sb, W, and Th as an oxide is used as an oxide.
0.4 mol% added and contained, and SiO 2 1.0 to 5.0
Mol%, 0.01 to 0.15 mol% of Mn as an oxide, and 0.1 to 2.0 mol% of Al 2 O 3, and a main component composed of barium titanate, lead titanate, and calcium titanate. Among them, a positive temperature coefficient thermistor in which the composition ratio of barium site is less than that of titanium site in the range of 0.970 to 0.997 with respect to titanium site.
酸カルシウムを主成分とし、主成分に対し半導体化剤と
して、Y,La,Ce,Nb,Bi,Sb,W,Thの
元素のうち少なくとも1種類を酸化物として添加含有さ
せ、さらにSiO2,Mnを酸化物として含有させ、さ
らにAl2O3を含有させ、チタン酸バリウム、チタン酸
鉛、チタン酸カルシウムよりなる主成分のうち、バリウ
ムサイトの組成比率がチタンサイトに対して0.970
〜0.997の範囲でチタンサイトより少ない正特性サ
ーミスタの製造方法において、バリウムサイトとチタン
サイトの組成比を1:1とした主成分を仮焼した後に、
酸化チタンを主成分1モルに対して0.003〜0.0
3モル添加して最終焼成する正特性サーミスタの製造方
法。3. Barium titanate, lead titanate, and calcium titanate as main components, and at least one of Y, La, Ce, Nb, Bi, Sb, W, and Th elements as a semiconducting agent for the main components. Barium among the main components of barium titanate, lead titanate, and calcium titanate, one kind of which is added and contained as an oxide, SiO 2 and Mn which are contained as oxides, and which further contains Al 2 O 3. Site composition ratio is 0.970 with respect to titanium site
In the method for producing a positive temperature coefficient thermistor having a ratio of titanium sites less than 0.997 in the range of about 0.997, after calcining the main component with a composition ratio of barium site to titanium site of 1: 1,
0.003 to 0.0 based on 1 mol of titanium oxide as the main component
A method for producing a positive temperature coefficient thermistor in which 3 mol is added and final firing is performed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP348094A JPH07211511A (en) | 1994-01-18 | 1994-01-18 | Positive temperature coefficient thermistor and its production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP348094A JPH07211511A (en) | 1994-01-18 | 1994-01-18 | Positive temperature coefficient thermistor and its production |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH07211511A true JPH07211511A (en) | 1995-08-11 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP348094A Pending JPH07211511A (en) | 1994-01-18 | 1994-01-18 | Positive temperature coefficient thermistor and its production |
Country Status (1)
Country | Link |
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JP (1) | JPH07211511A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6663794B2 (en) | 2000-08-10 | 2003-12-16 | Nippon Soken, Inc. | Reducing-atmosphere-resistant thermistor element, production method thereof and temperature sensor |
-
1994
- 1994-01-18 JP JP348094A patent/JPH07211511A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6663794B2 (en) | 2000-08-10 | 2003-12-16 | Nippon Soken, Inc. | Reducing-atmosphere-resistant thermistor element, production method thereof and temperature sensor |
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