JPH07193404A - Band pass filter - Google Patents
Band pass filterInfo
- Publication number
- JPH07193404A JPH07193404A JP34825993A JP34825993A JPH07193404A JP H07193404 A JPH07193404 A JP H07193404A JP 34825993 A JP34825993 A JP 34825993A JP 34825993 A JP34825993 A JP 34825993A JP H07193404 A JPH07193404 A JP H07193404A
- Authority
- JP
- Japan
- Prior art keywords
- coupling
- capacitance
- resonant
- elements
- interstage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、無線通信装置又は放送
装置等に組み込まれて、妨害波又は雑音等の除去に好適
な帯域通過ろ波器に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bandpass filter which is incorporated in a radio communication device or a broadcasting device and is suitable for removing an interfering wave or noise.
【0002】[0002]
【従来の技術】図19(a)は、従来の帯域通過ろ波器
の一例の要部を示す断面図[図19(b)のB−B断面
図]、図19(b)は、図19(a)のA−A断面図
で、1はシ−ルドケ−ス、21ないし24は共振素子であ
る。図20(a)もまた従来の帯域通過ろ波器の一例の
要部を示す平面図、図20(b)は、図20(a)のA
−A断面図で、21ないし24は共振素子、151 ないし154
は共振素子21ないし24の各周りに各別に設けた固体誘電
体で、各固体誘電体の側面及び底面に金属層を設けてあ
る。161 及び162 は入出力結合容量素子、1712、1721、
1722、1731、1732及び1741は段間結合容量形成素子で、
それぞれ共振素子21ないし24の各上端面に設けてある。2. Description of the Related Art FIG. 19 (a) is a sectional view showing an essential part of an example of a conventional bandpass filter [sectional view taken along the line BB of FIG. 19 (b)], and FIG. in a-a sectional view of the 19 (a), 1 is - Rudoke - scan, 2 1 to 2 4 are resonance elements. FIG. 20 (a) is also a plan view showing a main part of an example of a conventional bandpass filter, and FIG. 20 (b) is a view of A in FIG. 20 (a).
In the cross-sectional view of -A, 2 1 to 2 4 are resonant elements, and 15 1 to 15 4 are
In solid dielectric provided on the other around the resonant elements 2 1 to 2 4, it is a metal layer provided on the side surface and bottom surface of each solid dielectric. 16 1 and 16 2 are input / output coupling capacitive elements, 17 12 , 17 21 and
17 22 , 17, 31 , 17 32 and 17 41 are inter-stage coupling capacitance forming elements,
2 1 each resonator to is provided on each upper surface of the two 4.
【0003】[0003]
【発明が解決しようとする課題】図19に示した従来の
帯域通過ろ波器においては、所要の電気的特性を得るた
めに、共振素子21ないし24の各中心間隔を適宜異ならせ
て各段間磁気結合係数を所要値に一致させる必要があ
る。したがって、要求される電気的特性が異なる毎に共
振素子の中心間隔を変えて帯域通過ろ波器の設計を行う
必要があるため、生産性に劣る欠点がある。図20に示
した従来の帯域通過ろ波器においては、共振素子21ない
し24の各形状及び寸法を互いに等しく形成すると共に、
共振素子21ないし24の各周りに各別に設けた固体誘電体
151 ないし154 の形状、寸法及び誘電率を互いに等しく
形成してあるが、固体誘電体151 ないし154 の各側面に
設けた金属層によって隣接共振素子間の結合が阻止され
るため、所要の電気的特性を得るには共振素子21ないし
24の段間結合容量、即ち、段間結合容量形成素子1712及
び1721間の容量、1722及び1731間の容量、1732及び1741
間の容量を所要値に一致させる必要があり、そのために
段間結合容量形成素子1712ないし1741の各対向面積、対
向間隔又は対向面積及び間隔の双方を所要の容量に応じ
て適宜選定する必要があるから、図19に示した従来の
帯域通過ろ波器と同様、要求される電気的特性が異なる
毎に各段間結合容量を異ならせる必要があり、又、段間
結合容量形成素子1712ないし1741を共振素子21ないし24
の各上端面に取り付けるに当たって、各素子1712ないし
1741毎に半田付けを行う必要があるから、矢張り生産性
に劣る欠点がある。In the conventional band pass wave filter shown in FIG. 19 [0006], in order to obtain the necessary electrical properties, by varying appropriately the distance between the centers of 2 to 4 resonant element 2 1 It is necessary to match the inter-stage magnetic coupling coefficient with the required value. Therefore, it is necessary to change the center interval of the resonant elements each time the required electrical characteristics are changed to design the bandpass filter. In the conventional band pass wave filter shown in FIG. 20, as well as equal to each other form the respective shape and size of the resonant elements 2 1 to 2 4,
Solid dielectric provided on separately to each around the resonant element 2 1 to 2 4
15 1 to 15 4 of the shape, for it is formed dimensions and dielectric constant equal to each other, the coupling between adjacent resonant element is blocked by the metal layer provided on each side of the solid dielectric 15 1 to 15 4, from 2 1 resonating element to obtain the required electrical characteristics
2 4 inter-stage coupling capacitance, that is, capacitance between the inter-stage coupling capacitance forming elements 17 12 and 17 21 , 17 22 and 17 31 , 17 32 and 17 41
It is necessary to match the capacitance between them with a required value, and therefore, the facing area, the facing distance, or both the facing area and the distance of the inter-stage coupling capacitance forming elements 17 12 to 17 41 are appropriately selected according to the required capacitance. Therefore, as in the conventional bandpass filter shown in FIG. 19, it is necessary to make the interstage coupling capacitance different for each different required electrical characteristic, and the interstage coupling capacitance forming element. 17 12 to 17 41 as a resonant element 2 1 to 2 4
Each element 17 12 or
17 It is necessary to solder every 41 , so there is a drawback that the productivity is low.
【0004】[0004]
【課題を解決するための手段】本発明は、互いに磁気結
合される共振素子間に介装された段間結合用容量素子を
備えた帯域通過ろ波器を実現することによって、従来の
欠点を除こうとするものである。SUMMARY OF THE INVENTION The present invention overcomes the drawbacks of the prior art by providing a bandpass filter having interstage coupling capacitive elements interposed between resonant elements that are magnetically coupled to each other. It is something to remove.
【0005】[0005]
【実施例】図1(a)は、本発明の一実施例の要部を示
す平面図、図1(b)は、図1(a)のA−A断面図、
図1(c)は、図1(b)のB−B断面図で、1はシ−
ルドケ−ス、21ないし24は共振素子、31ないし34は共振
周波数微調整素子で、例えばシ−ルドケ−ス1の上壁に
螺合され、内端面が共振素子の上端面と対向し、シ−ル
ドケ−ス1内への挿入長を変えることの可能な金属螺子
より成る。41ないし44はロックナット、512 、523 及び
534 は本発明の要旨である段間結合用可変容量素子で、
適宜幅、例えば共振素子21ないし24の直径とほぼ同様の
幅の金属板をコの字型に折り曲げた電極より成り、回転
支軸612 、623 及び634 によって隣接する共振素子間に
おいて回転支軸の周りに回転自在に設けてある。尚、回
転支軸612 ないし634 は、絶縁層を介して内端を段間結
合用可変容量素子512 ないし534 に固着した金属螺子又
は内端を可変容量素子512 ないし534 に直接固着し、外
周に螺子を刻んだ丸棒状絶縁体より成る。図1には、入
出力結合素子(容量結合素子又は磁界結合素子の何れの
素子でも本発明を実施できる)及び入出力端子を図示す
るのを省いてある。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 (a) is a plan view showing an essential part of one embodiment of the present invention, and FIG. 1 (b) is a sectional view taken along the line A--A in FIG. 1 (a).
FIG. 1C is a sectional view taken along the line BB of FIG.
Rudoke - scan, 2 1 to 2 4 resonant element, in 3 1 to 3 4 resonance frequency fine-tuning element, for example - Rudoke - screwed to the upper wall of the scan 1, the inner end face and the upper end surface of the resonator It is composed of metal screws facing each other and capable of changing the insertion length into the shield case 1. 4 1 to 4 4 are lock nuts, 5 12 , 5 23 and
5 34 is a variable capacitance element for interstage coupling, which is the gist of the present invention,
Appropriate width, for example, the resonant element 2 1 to consist of electrodes by bending a metal plate of substantially the same width as the 2 4 diameter U shape, between the resonance elements adjacent the pivot shaft 6 12, 6 23 and 6 34 In, it is rotatably provided around the rotation spindle. The rotary support shafts 6 12 to 6 34 have metal screws or inner ends fixed to the variable capacitance elements 5 12 to 5 34 for inter-stage coupling via the insulating layer to the variable capacitance elements 5 12 to 5 34 . It consists of a round bar-shaped insulator that is fixed directly and has a screw cut on the outer circumference. In FIG. 1, an input / output coupling element (the present invention can be embodied in any element of a capacitive coupling element or a magnetic field coupling element) and an input / output terminal are not shown.
【0006】図1に示した段間結合用可変容量素子512
ないし534 及び回転支軸612 ないし634 を除いた状態に
おいては、共振素子21ないし24の各段間結合は磁気結合
となる。いま、共振素子21及び22の各分布インダクタン
スL1及びL2と共振素子21及び22間の磁気結合係数M12 に
着目した場合の基本等価回路は図2で示され、図2の等
価回路は、一般に図3に示す等価回路で表わされる。図
3の等価回路は図4に示す等価回路に変換し得るが、こ
れを図5及び図6について説明する。図5における各回
路定数をZ1、Z2及びZ3、図6における各回路定数をZA、
ZB及びZCとすると、これらの間には等価変換公式によっ
て次の各式が成立する。The variable capacitance element for interstage coupling 5 12 shown in FIG.
Through 5 34 and the rotary support shafts 6 12 through 6 34 are removed, the inter-stage coupling of the resonant elements 2 1 through 2 4 is magnetic coupling. Now, the basic equivalent circuit when attention is directed to the magnetic coupling coefficient M 12 between the respective distributed inductance L 1 and L 2 of the resonant elements 2 1 and 2 2 resonant element 2 1 and 2 2 are shown in FIG. 2, FIG. 2 The equivalent circuit of is generally represented by the equivalent circuit shown in FIG. The equivalent circuit of FIG. 3 can be converted into the equivalent circuit shown in FIG. 4, which will be described with reference to FIGS. The circuit constants in FIG. 5 are Z 1 , Z 2 and Z 3 , and the circuit constants in FIG. 6 are Z A ,
Given Z B and Z C , the following equations hold between them due to the equivalent conversion formula.
【数1】 図4における各回路定数をZAL 、ZBL 及びZCL とする
と、図4における各回路定数ZAL 、ZBL 及びZCL と図3
における各回路定数L1−M12、L2−M12及びM12との関
係は、式(1)ないし式(3)から次の各式で表わされ
る。[Equation 1] If the circuit constants in FIG. 4 are Z AL , Z BL, and Z CL , then the circuit constants Z AL , Z BL, and Z CL in FIG.
The relationship with each of the circuit constants L 1 -M 12 , L 2 -M 12 and M 12 in is expressed by the following equations from equations (1) to (3).
【数2】 図4における各回路定数を式(4)ないし式(6)で示
した関係を有するように選ぶことによって、図3の等価
回路は図4の等価回路で表わされることとなる。尚、
L1、L2及びM12 の間には、 M12 ≪L1≒L2 ・・・・(7) の関係があるので、式(6)における、[Equation 2] The equivalent circuit of FIG. 3 is represented by the equivalent circuit of FIG. 4 by selecting each circuit constant in FIG. 4 so as to have the relationship shown by the expressions (4) to (6). still,
Since there is a relation of M 12 << L 1 ≈L 2 ... (7) among L 1 , L 2 and M 12 ,
【数3】 の値は極めて大となる。[Equation 3] The value of is extremely large.
【0007】図1に示した本発明帯域通過ろ波器の基本
等価回路図は、図7で示される。図7において、L1ない
しL4は共振素子21ないし24の各分布インダクタンス、C1
ないしC4は共振素子21ないし24の各分布容量と共振素子
21ないし24の各上端面及び共振周波数微調整素子31ない
し34の各内端面間の容量との合成容量、M12 は共振素子
21と22との磁気結合係数、M23 は共振素子22と23との磁
気結合係数、M34は共振素子23と24との磁気結合係数、C
01 及びC45 は入出力結合容量、C12 は共振素子21及び
段間結合用可変容量素子512 間の容量と素子512 及び共
振素子22間の容量との合成容量、C23 は共振素子22及び
段間結合用可変容量素子523 間の容量と素子523 及び共
振素子23間の容量との合成容量、C34 は共振素子23及び
段間結合用可変容量素子534 間の容量と素子534 及び共
振素子24間の容量との合成容量である。図2ないし図6
について説明した等価変換手法に基づいて、図7に示し
た基本等価回路をπ型回路に変換した等価回路は、図8
で表わされる。図8におけるL12 は図4におけるZCL に
対応するインダクタンスで、容量C12と共に共振素子21
及び22間の結合用並列共振回路を形成する。L23 は容量
C23 と共に共振素子22及び23間の結合用並列共振回路を
形成するインダクタンス、L34 は容量C34 と共に共振素
子23及び24間の結合用並列共振回路を形成するインダク
タンスである。各段間結合用並列共振回路を一般的に図
9のように表わすと、そのインピ−ダンスZは次式で示
される。A basic equivalent circuit diagram of the band pass filter of the present invention shown in FIG. 1 is shown in FIG. In FIG. 7, L 1 through L 4 are each distributed inductance of the resonant element 2 1 to 2 4, C 1
To C 4 are the resonant elements 2 1 to 2 4 and the resonant elements
2 1 to 2 4 each upper end surface and resonance frequency fine adjustment element 3 1 to 3 4 combined capacity with each end surface, M 12 is a resonance element
The magnetic coupling coefficient between 2 1 and 2 2 , M 23 is the magnetic coupling coefficient between resonant elements 2 2 and 2 3 , M 34 is the magnetic coupling coefficient between resonant elements 2 3 and 2 4, and C
01 and C 45 are input / output coupling capacitances, C 12 is a combined capacitance of the capacitance between the resonance element 2 1 and the interstage coupling variable capacitance element 5 12 and the capacitance between the element 5 12 and the resonance element 2 2 , and C 23 is The combined capacitance of the capacitance between the resonant element 2 2 and the variable capacitance element for interstage coupling 5 23 and the capacitance between the element 5 23 and the resonant element 2 3 , C 34 is the resonant element 2 3 and the variable capacitance element 5 for interstage coupling. capacitance between 34 and element 5 34 and a combined capacitance of the capacitance between the resonant element 2 4. 2 to 6
The equivalent circuit obtained by converting the basic equivalent circuit shown in FIG. 7 into a π-type circuit based on the equivalent conversion method described in FIG.
It is represented by. L 12 in FIG. 8 is an inductance corresponding to Z CL in FIG. 4, the resonant element 2 1 with capacitance C 12
And forming a parallel resonant circuit coupled between the 2 2. L 23 is capacity
An inductance forming a coupling parallel resonant circuit between the resonance elements 2 2 and 2 3 together with C 23 , and an L 34 an inductance forming a coupling parallel resonance circuit between the resonance elements 2 3 and 2 4 together with the capacitance C 34 . When the parallel resonant circuit for coupling between stages is generally expressed as shown in FIG. 9, its impedance Z is expressed by the following equation.
【数4】 本発明帯域通過ろ波器においては、回転支軸612 を回転
させて段間結合用可変容量素子512 を回転させ、共振素
子21及び22と素子512 との機械的対向関係を変化させる
と、共振素子21と22間の段間結合容量C12 が変化し、式
(8)におけるインピ−ダンスZが変化する。回転支軸
623 及び634 を回転させて段間結合用可変容量素子523
及び534 を回転させた場合にも、共振素子22と23間及び
共振素子23と24間の各段間結合容量C2 3 及びC34 が変化
し、各段間結合用並列共振回路のインピ−ダンスが変化
する。共振素子21ないし24の各段間結合用並列共振回路
の共振周波数より低い周波数領域においては、各段間結
合用並列共振回路のインピ−ダンスは誘導性となり、各
段間結合用並列共振回路の共振周波数より高い周波数領
域においては、各段間結合用並列共振回路のインピ−ダ
ンスは容量性となる。したがって、本発明帯域通過ろ波
器においては、各段間結合用並列共振回路の共振周波数
を、本発明帯域通過ろ波器に要求される通過域における
中心周波数より高い周波数に選ぶと共に、各段間結合用
並列共振回路のインピ−ダンスを誘導性の範囲に設定す
ることによって、図10及び図11に等価回路を示すよ
うに共振素子21ないし24の各段間結合を磁気結合とな
し、各段間結合用並列共振回路のインピ−ダンスが誘導
性に保たれる範囲内において段間結合用可変容量素子5
12ないし534 を回転させることによって、各段間の磁気
結合係数を変化させることができる。又、各段間結合用
並列共振回路の共振周波数を、本発明帯域通過ろ波器に
要求される通過域における中心周波数より低い周波数に
選ぶと共に、各段間結合用並列共振回路のインピ−ダン
スを容量性の範囲に設定することによって、図12に等
価回路を示すように共振素子21ないし24の各段間結合を
容量結合となし、各段間結合用並列共振回路のインピ−
ダンスが容量性に保たれる範囲内において段間結合用可
変容量素子512 ないし534 を回転させることによって、
各段間の容量結合係数を変化させることができる。この
ように本発明帯域通過ろ波器においては、各段間結合を
磁気結合又は容量結合の何れの結合態様をも、その実現
が可能で、各段間結合として磁気結合又は容量結合の何
れの結合態様を選んだ場合においても、各段間の結合係
数を互いに異ならせることが可能であるから、共振素子
21ないし24の各中心間隔をすべて一定に形成した場合に
おいても所要の電気的特性を持たせることができる。
尚、式(6)及び式(7)で説明したように、ZCL の
値、即ち、L12 、L23 及びL34 の値は極めて大であるか
ら、L12 、L23 及びL34 と共に段間結合用並列共振回路
を形成するC12 、C23 及びC34 の値が小なる場合でも段
間結合係数の調整を自在に行うことができる。[Equation 4] In the band-pass filter of the present invention, the rotary support shaft 6 12 is rotated to rotate the interstage coupling variable capacitance element 5 12 , and the mechanical opposing relationship between the resonant elements 2 1 and 2 2 and the element 5 12 is established. changing the resonance element 2 1 interstage coupling capacitor C 12 is changed between the 2 2, Inpi in equation (8) - Dance Z changes. Rotating spindle
Variable capacitors for interstage coupling 5 23 by rotating 6 23 and 6 34
And 5 34 are also rotated, the interstage coupling capacitances C 2 3 and C 34 between the resonant elements 2 2 and 2 3 and between the resonant elements 2 3 and 2 4 change, and The impedance of the resonant circuit changes. Resonant element 2 1 to the frequency region lower than the resonance frequency of the parallel resonant circuit coupled between the respective stages of the 2 4, Inpi parallel resonant circuit coupled between the respective stages - dance becomes inductive, parallel resonant coupling between the respective stages In a frequency range higher than the resonance frequency of the circuit, the impedance of the parallel resonance circuit for inter-stage coupling becomes capacitive. Therefore, in the bandpass filter of the present invention, the resonance frequency of each parallel resonant circuit for coupling between stages is selected to be higher than the center frequency in the pass band required for the bandpass filter of the present invention, and Inpi of the parallel resonant circuit during binding - by setting a range of the inductive dance, no magnetic coupling the coupling between the respective stages of the resonant element 2 1 to 2 4 to indicate the equivalent circuit in FIG. 10 and FIG. 11 , The variable capacitance element for interstage coupling within the range in which the impedance of each parallel resonant circuit for interstage coupling is kept inductive.
By rotating 12 to 54 , the magnetic coupling coefficient between each stage can be changed. Further, the resonance frequency of the parallel resonant circuit for interstage coupling is selected to be lower than the center frequency in the pass band required for the bandpass filter of the present invention, and the impedance of the parallel resonant circuit for interstage coupling is selected. the by setting the range of the capacitive, no capacitive coupling of the coupling between the respective stages of the resonant element 2 1 to 2 4 to an equivalent circuit in FIG. 12, Inpi parallel resonant circuit coupled between the respective stages -
By rotating the variable capacitance elements 5 12 to 5 34 for interstage coupling within the range where the dance is kept capacitive,
The capacitive coupling coefficient between each stage can be changed. As described above, in the band-pass filter of the present invention, each inter-stage coupling can be realized in any coupling mode of magnetic coupling or capacitive coupling, and each inter-stage coupling is either magnetic coupling or capacitive coupling. Even when a coupling mode is selected, it is possible to make the coupling coefficients between the stages different from each other.
Even when all the center intervals of 2 1 to 2 4 are formed to be constant, the required electric characteristics can be provided.
As described in the formulas (6) and (7), the value of Z CL , that is, the values of L 12 , L 23, and L 34 are extremely large, and therefore, together with L 12 , L 23, and L 34 , Even when the values of C 12 , C 23 and C 34 forming the parallel resonant circuit for interstage coupling are small, the interstage coupling coefficient can be freely adjusted.
【0008】図1には同軸共振素子21ないし24の周りに
固体誘電体を介在させることなく、空気のみ介在させた
場合を例示したが、図13に要部の断面図[図1(b)
に対応する断面図]を示すように、同軸共振素子21ない
し24の周りに共通の誘電体ブロック7を設け、同軸共振
素子21ないし24の各上端部に電極81ないし84を取り付
け、各電極の間に段間結合用可変容量素子512 ないし5
34 を設けるようにしても本発明を実施することができ
る。図13は、段間結合用可変容量素子512 ないし534
を、バタフライコンデンサのような小型可変コンデンサ
で形成した場合を例示したものであるが、図1に示した
ものと同様の回転コの字型電極で形成してもよい。図1
3における他の符号及び構成は、図1と同様である。図
1及び図13には同軸共振素子21ないし24を丸棒状の導
体で形成した場合を例示したが、角棒状導体又は板状導
体で形成してもよい。図14(a)は、本発明の他の実
施例の要部を示す断面図[図14(c)のC−C断面
図]、図14(b)は、図14(a)のA−A断面図、
図14(c)は、図14(a)のB−B断面図で、121
ないし124 はリング共振素子で、図に示すように、適宜
幅の金属板の一端をシ−ルドケ−ス1の底壁に固定し、
途中を2回に亙って折り曲げてほぼコの字型に形成し、
他端とシ−ルドケ−ス1の底壁との間に空隙を設けてあ
る。このように形成した共振素子は、金属板部分によっ
てインダクタンス分が形成され、金属板の他端とシ−ル
ドケ−ス1の底壁との間の空隙部分によって容量分が形
成される。図14には図示するのを省いてあるが、隣接
するリング共振素子の間に、図1に示したものと同様の
回転コの字型電極及びその回転支軸より成る段間結合用
可変容量素子を設けるが、式(6)及び式(7)で説明
したように、段間結合用並列共振回路を形成するインダ
クタンス分が極めて大であるから、容量分が小なる場合
にも段間結合の機能を呈することが十分可能で、したが
って、段間結合用可変容量素子を設ける箇所としては、
電界の極端に弱い箇所を除いて任意適宜の箇所を選定し
て本発明を実施することができる。段間結合用可変容量
素子として図13に示したものと同様の小型可変コンデ
ンサより成る段間結合用可変容量素子を用いてもよい。
図14には、図1と同様、入出力結合素子及び入出力端
子を図示するのを省いてある。[0008] without intervention of a solid dielectric around the coaxial resonator element 2 1 to 2 4 in FIG. 1, a case has been exemplified where is interposed only air, sectional view of a main portion in FIG. 13 [Figure 1 ( b)
As shown the cross-section view] corresponding to the common dielectric block 7 around the coaxial resonator element 2 1 to 2 4 is provided, to the electrode 81 is not in the upper end portion of the coaxial resonator 2 1 to 2 4 8 4 It mounting, variable capacitance element 5 from 12 for interstage coupling between the electrodes 5
The present invention can be implemented even when 34 is provided. FIG. 13 shows variable capacitance elements 5 12 to 5 34 for interstage coupling.
Although the above is an example of a case where it is formed by a small variable capacitor such as a butterfly capacitor, it may be formed by a rotary U-shaped electrode similar to that shown in FIG. Figure 1
Other symbols and configurations in 3 are the same as those in FIG. Although FIG. 1 and FIG. 13 illustrates a case where from 2 1 coaxial resonator to form a 2 4 a conductor of round bar may be formed with square bar conductor or plate-like conductor. FIG. 14A is a cross-sectional view showing a main part of another embodiment of the present invention [C-C cross-sectional view of FIG. 14C], and FIG. 14B is an A- of FIG. 14A. A sectional view,
FIG. 14 (c), at B-B sectional view of FIG 14 (a), 12 1
To 12 4 in the ring resonant elements, as shown, one end of the metal plate of appropriate width - Rudoke - fixed to the bottom wall of the scan 1,
Bend over halfway to form an almost U-shape,
A gap is provided between the other end and the bottom wall of the shield case 1. In the thus-formed resonance element, an inductance component is formed by the metal plate portion, and a capacitance component is formed by the void portion between the other end of the metal plate and the bottom wall of the shield case 1. Although not shown in FIG. 14, a variable capacitor for inter-stage coupling, which is composed of a rotary U-shaped electrode similar to that shown in FIG. 1 and a rotary support shaft thereof, is provided between adjacent ring resonant elements. Although an element is provided, as described in the equations (6) and (7), the inductance component forming the parallel resonant circuit for interstage coupling is extremely large, and thus the interstage coupling is performed even when the capacitance is small. It is sufficiently possible to exhibit the function of, and therefore, the place for providing the variable capacitance element for interstage coupling is
The present invention can be carried out by selecting any appropriate place except the place where the electric field is extremely weak. As the variable capacitance element for inter-stage coupling, a variable capacitance element for inter-stage coupling formed of a small variable capacitor similar to that shown in FIG. 13 may be used.
In FIG. 14, as in FIG. 1, the illustration of the input / output coupling element and the input / output terminal is omitted.
【0009】共振素子としては、以上に例示したものの
他、ヘリカル共振素子又は印刷手法によって形成される
共振素子を用いても本発明を実施することができる。図
15(a)は、共振素子として印刷手法によって形成さ
れる共振素子を用いた実施例の要部を示す断面図[図1
5(b)のB−B断面図]、図15(b)は、図15
(a)のA−A断面図で、9はアルミナ等より成る誘電
体板で、周縁をシ−ルドケ−ス1の上壁、底壁及び両端
壁に固定してある。221 ないし224 は誘電体板9に付着
させた金属薄層より成る共振素子で、各金属薄層の下端
部はシ−ルドケ−ス1の底壁に電気的に接続し、各上端
部はシ−ルドケ−ス1の上壁と電気的に接続されること
のないようにして同軸共振素子と同様の素子として機能
するように形成してある。1012、1023及び1034は容量形
成用回転電極板、1112、1123及び1134は回転支軸で、図
1に示した回転支軸612 ないし634 と同様、絶縁層を介
して内端を容量形成用回転電極板1012ないし1034に固着
した金属螺子又は内端を容量形成用回転電極板1012ない
し1034に直接固着し、外周に螺子を刻んだ丸棒状絶縁体
より成る。回転支軸1112、1123及び1134を操作して容量
形成用回転電極板1012、1023及び1034を回転させ、共振
素子との対向関係を変えることによって段間結合容量を
変化させることができる。The present invention can be implemented by using a helical resonance element or a resonance element formed by a printing method as the resonance element, in addition to the above-exemplified ones. FIG. 15A is a cross-sectional view showing a main part of an embodiment using a resonance element formed by a printing method as the resonance element [FIG.
5 (b) is a cross-sectional view taken along the line BB], and FIG.
In the A-A sectional view of (a), reference numeral 9 is a dielectric plate made of alumina or the like, the peripheral edges of which are fixed to the top wall, bottom wall and both end walls of the shield case 1. Reference numerals 22 1 to 22 4 denote resonance elements composed of thin metal layers attached to the dielectric plate 9. The lower end portions of the respective thin metal layers are electrically connected to the bottom wall of the shield case 1 and the upper end portions thereof are connected to each other. Is formed so as not to be electrically connected to the upper wall of the shield case 1 and to function as an element similar to the coaxial resonance element. 10 12 , 10 23 and 10 34 are rotary electrode plates for forming a capacitance, 11 12 , 11 23 and 11 34 are rotary shafts, and like the rotary shafts 6 12 to 6 34 shown in FIG. end secured directly to the capacitance forming rotating electrode plate 10 12 to 10 34 to the rotating electrode plate 10 12 no capacitance forming a metal screw or inner end fixed to 10 34 in Te, round bar insulator chopped screw on the outer periphery Consists of The inter-stage coupling capacitance is changed by operating the rotary support shafts 11 12 , 11 23 and 11 34 to rotate the capacity forming rotary electrode plates 10 12 , 10 23 and 10 34 and changing the facing relationship with the resonance element. be able to.
【0010】以上は何れも段間結合用容量素子として可
変容量素子を用いた場合を例示したが、図16に示す実
施例のように、固定容量素子を用いてもよい。図16
(a)は、本発明の他の実施例の要部を示す断面図[図
16(b)のC−C断面図]、図16(b)は、図16
(a)のA−A断面図、図16(c)は、図16(a)
のB−B断面図で、1はシ−ルドケ−ス、21ないし24は
同軸共振素子、7は共通の誘電体ブロック、13は誘電体
板で、共振素子21ないし24の各上端面に機械的に固定し
てある。尚、共振素子21ないし24の各上端部を共通の誘
電体ブロック7の上面から適宜高さだけ突出させるか、
図13に示したように共振素子21ないし24の各上端部に
電極を取り付けて、共通の誘電体ブロック7の上面と誘
電体板13の下縁との間に適宜の間隔を設けてある。1
412、1421、1422、1431、1432及び1441は段間結合容量
形成金属薄層で、例えば金属薄層1412、1431及び1432は
誘電体板13の背面に付着させると共に、金属薄層1412は
共振素子21の上端面に電気的に接続し、金属薄層1431及
び1432は共振素子23の上端面に電気的に接続し、金属薄
層1421、1422及び1441は誘電体板13の表面に付着させる
と共に、金属薄層1421及び1422は共振素子22の上端面に
電気的に接続し、金属薄層1441は共振素子24の上端面に
電気的に接続してある。金属薄層1412と1421との対向面
積、金属薄層1422と1431との対向面積、金属薄層1432と
1441との対向面積をそれぞれ適当に選ぶことによって、
所要の電気的特性を持たせることができる。以上何れの
実施例においても共振素子の数が4個(次数4)の場合
を例示したが、次数はこれを適宜増減して本発明を実施
することができる。図1、図13ないし図15には、段
間結合用可変容量素子として、金属板をコの字型に折り
曲げて成る回転電極、小型可変コンデンサ又は板状の回
転電極等より成る素子を用いた場合を例示したが、短冊
型の金属板を、その長手方向が、共振素子の軸方向と平
行となるようにして隣接共振素子間に設け、長手方向の
軸の周りに回転するように形成した電極、短冊型の金属
板を隣接する共振素子の間に介在させ、その板面が共振
素子を連ねる方向と直角をなすように支持してシ−ルド
ケ−ス内への挿入長を変え得るように形成した電極等よ
り成る段間結合用可変容量素子を用いるようにしてもよ
い。図1、図13ないし図15に示した実施例において
も、段間結合用可変容量素子の代りに、図16に示した
ものと同様の固定容量素子又は小型の固定容量コンデン
サを設けるようにしてもよい。図15及び図16に示し
た実施例においては、共振周波数の微調整素子について
の説明を欠いているが、設計製作を正確に行うことによ
って微調整素子を省いても所要の共振周波数に一致させ
ることが可能である。In all of the above, the case where the variable capacitance element is used as the capacitance element for coupling between stages is shown, but a fixed capacitance element may be used as in the embodiment shown in FIG. FIG.
16A is a sectional view showing a main part of another embodiment of the present invention [a sectional view taken along the line CC in FIG. 16B], and FIG.
16A is a sectional view taken along line AA of FIG. 16A, and FIG.
In the sectional view taken along line B-B, 1 sheet - Rudoke - scan, 2 1 to 2 4 are coaxial resonator element, 7 is a common dielectric block, 13 is a dielectric plate, each of the resonant elements 2 1 to 2 4 It is mechanically fixed to the upper end surface. Note that whether to protrude by appropriate height of each upper end portion of the resonant element 2 1 to 2 4 from the top surface of a common dielectric block 7,
From 2 1 resonance element as shown in FIG. 13 is attached to electrodes on the upper end of the 2 4, provided with a suitable spacing between the lower edge of the upper surface and the dielectric plate 13 of the common dielectric block 7 is there. 1
4 12 , 14 21 , 14 22 , 14 31 , 14 32 and 14 41 are thin metal layers for forming inter-stage coupling capacitance, for example, the thin metal layers 14 12 , 14 31 and 14 32 are attached to the back surface of the dielectric plate 13. together, the thin metal layer 14 12 is electrically connected to the upper end surface of the resonator element 2 1, the metal thin layer 14 31 and 14 32 is electrically connected to the upper end surface of the resonator element 2 3, the metal thin layer 14 21 , 14 22 and 14 41 with adhering to the surface of the dielectric plate 13, the thin metal layer 14 21 and 14 22 is electrically connected to the upper end surface of the resonator element 2 2, the metal thin layer 14 41 resonant element 2 It is electrically connected to the upper end surface of 4 . The facing area between the metal thin layers 14 12 and 14 21 and the facing area between the metal thin layers 14 22 and 14 31 and the metal thin layer 14 32
By appropriately selecting the facing area with 14 41 ,
It can have the required electrical characteristics. In each of the above embodiments, the case where the number of resonant elements is four (4th order) has been illustrated, but the present invention can be implemented by appropriately increasing or decreasing the order. In FIGS. 1 and 13 to 15, an element including a rotary electrode formed by bending a metal plate in a U shape, a small variable capacitor, or a plate-shaped rotary electrode is used as the variable capacitance element for interstage coupling. As an example, a strip-shaped metal plate is provided between adjacent resonant elements so that the longitudinal direction thereof is parallel to the axial direction of the resonant element, and is formed so as to rotate around the longitudinal axis. An electrode and a strip-shaped metal plate are interposed between adjacent resonance elements, and the plate surface is supported so as to form a right angle to the direction in which the resonance elements are connected so that the insertion length into the shield case can be changed. You may make it use the variable capacitance element for interstage couplings which consists of electrodes etc. which were formed in. Also in the embodiment shown in FIGS. 1 and 13 to 15, instead of the variable capacitance element for interstage coupling, a fixed capacitance element similar to that shown in FIG. 16 or a small fixed capacitance capacitor is provided. Good. In the embodiment shown in FIGS. 15 and 16, the description of the fine tuning element of the resonance frequency is omitted, but the fine tuning element can be omitted by performing the designing and manufacturing accurately so that the fine tuning element is matched with the required resonance frequency. It is possible.
【0011】本発明帯域通過ろ波器における通過域をチ
ェビシェフ特性に形成した場合、その伝送特性は次式で
求めることができる。When the pass band in the band pass filter of the present invention is formed to have a Chebyshev characteristic, its transmission characteristic can be obtained by the following equation.
【数5】 L:伝送損失 Tn(x):チェビシェフの多項式で、 x<1 の場合、 Tn(x)=cos(n cos-1x) x>1の場合、 Tn(x)=cosh(n cosh-1x) x:基準化リアクタンスで、[Equation 5] L: Transmission loss T n (x): Chebyshev polynomial, in the case of x <1, T n (x) = cos (n cos −1 x) In the case of x> 1, T n (x) = cosh (n cosh -1 x) x: normalized reactance,
【数6】 f0 :帯域通過ろ波器の通過域における中心周波数 f:任意の伝送周波数 BWr:帯域通過ろ波器の許容通過周波数帯域幅 S:通過帯域内における許容電圧定在波比(VSWR)[Equation 6] f 0 : Center frequency in the pass band of the band pass filter f: Arbitrary transmission frequency B Wr : Allowable pass frequency bandwidth of the band pass filter S: Allowable voltage standing wave ratio (VSWR) in the pass band
【0012】図17は、段間結合用並列共振回路のイン
ピ−ダンスが誘導性で、要部の等価回路が図10及び図
11で表されるように構成した本発明帯域通過ろ波器の
伝送特性を示す曲線図で、横軸は周波数、縦軸は減衰量
で、通過域の中心周波数より高い周波数領域における減
衰曲線の勾配が急峻である。図18(横軸及び縦軸は図
17と同じ)は、段間結合用並列共振回路のインピ−ダ
ンスが容量性で、要部の等価回路が図12で表されるよ
うに構成した本発明帯域通過ろ波器の伝送特性を示す曲
線図で、通過域の中心周波数より低い周波数領域におけ
る減衰曲線の勾配が急峻である。FIG. 17 shows a band-pass filter of the present invention in which the impedance of the parallel resonant circuit for interstage coupling is inductive and the equivalent circuit of the main part is constructed as shown in FIGS. In the curve diagram showing the transmission characteristics, the horizontal axis is frequency and the vertical axis is attenuation amount, and the slope of the attenuation curve is steep in the frequency region higher than the center frequency of the pass band. FIG. 18 (the horizontal axis and the vertical axis are the same as those in FIG. 17) shows that the impedance of the parallel resonant circuit for interstage coupling is capacitive, and the equivalent circuit of the main part is configured as shown in FIG. In the curve diagram showing the transmission characteristics of the band pass filter, the slope of the attenuation curve is steep in the frequency region lower than the center frequency of the pass band.
【0013】[0013]
【発明の効果】本発明は、段間結合が、本来磁気結合で
ある共振素子を縱続接続して成る帯域通過ろ波器におい
て、段間に結合容量を付加することによって、段間結合
を磁気結合又は容量結合の何れの結合にも成し得ると共
に、共振素子の中心間隔を一定に保ったまま、磁気結合
係数又は容量結合係数を変えて所要の電気的特性を持た
せることが可能であるから、共通の部品及び金型等を用
いて各種の電気的特性を有する帯域通過ろ波器を実現す
ることができ、生産性を著しく高めることができる。As described above, according to the present invention, in a band-pass filter in which resonant elements, which are originally magnetically coupled, are connected in series, the coupling capacitance is added between the stages so as to realize the coupling between the stages. It can be either magnetically coupled or capacitively coupled, and it is possible to have the required electrical characteristics by changing the magnetic coupling coefficient or the capacitive coupling coefficient while keeping the center distance of the resonance element constant. Therefore, the band pass filter having various electric characteristics can be realized by using the common parts and the mold, and the productivity can be remarkably enhanced.
【図1】本発明の一実施例の要部を示す図である。FIG. 1 is a diagram showing a main part of an embodiment of the present invention.
【図2】本発明の構成原理を説明するための等価回路図
である。FIG. 2 is an equivalent circuit diagram for explaining a configuration principle of the present invention.
【図3】本発明の構成原理を説明するための等価回路図
である。FIG. 3 is an equivalent circuit diagram for explaining a configuration principle of the present invention.
【図4】本発明の構成原理を説明するための等価回路図
である。FIG. 4 is an equivalent circuit diagram for explaining a configuration principle of the present invention.
【図5】本発明の構成原理を説明するための回路図であ
る。FIG. 5 is a circuit diagram for explaining a configuration principle of the present invention.
【図6】本発明の構成原理を説明するための回路図であ
る。FIG. 6 is a circuit diagram for explaining a configuration principle of the present invention.
【図7】本発明帯域通過ろ波器の等価回路図である。FIG. 7 is an equivalent circuit diagram of the bandpass filter of the present invention.
【図8】本発明帯域通過ろ波器の等価回路図である。FIG. 8 is an equivalent circuit diagram of the bandpass filter of the present invention.
【図9】本発明帯域通過ろ波器の作動説明のための等価
回路図である。FIG. 9 is an equivalent circuit diagram for explaining the operation of the bandpass filter of the present invention.
【図10】本発明帯域通過ろ波器の作動説明のための等
価回路図である。FIG. 10 is an equivalent circuit diagram for explaining the operation of the bandpass filter of the present invention.
【図11】本発明帯域通過ろ波器の作動説明のための等
価回路図である。FIG. 11 is an equivalent circuit diagram for explaining the operation of the bandpass filter of the present invention.
【図12】本発明帯域通過ろ波器の作動説明のための等
価回路図である。FIG. 12 is an equivalent circuit diagram for explaining the operation of the bandpass filter of the present invention.
【図13】本発明の他の実施例の要部を示す断面図であ
る。FIG. 13 is a cross-sectional view showing the main parts of another embodiment of the present invention.
【図14】本発明の他の実施例の要部を示す断面図であ
る。FIG. 14 is a cross-sectional view showing the main parts of another embodiment of the present invention.
【図15】本発明の他の実施例の要部を示す断面図であ
る。FIG. 15 is a cross-sectional view showing the main parts of another embodiment of the present invention.
【図16】本発明の他の実施例の要部を示す断面図であ
る。FIG. 16 is a cross-sectional view showing the main parts of another embodiment of the present invention.
【図17】本発明帯域通過ろ波器の伝送特性を示す曲線
図である。FIG. 17 is a curve diagram showing the transmission characteristics of the bandpass filter of the present invention.
【図18】本発明帯域通過ろ波器の伝送特性を示す曲線
図である。FIG. 18 is a curve diagram showing the transmission characteristics of the bandpass filter of the present invention.
【図19】従来の帯域通過ろ波器の要部を示す図であ
る。FIG. 19 is a diagram showing a main part of a conventional bandpass filter.
【図20】従来の帯域通過ろ波器の要部を示す図であ
る。FIG. 20 is a diagram showing a main part of a conventional bandpass filter.
1 シ−ルドケ−ス 21ないし24 共振素子 31ないし34 共振周波数微調整素子 41ないし44 ロックナット 512 ないし534 段間結合用可変容量素子 612 ないし634 回転支軸 7 固体誘電体 81ないし84 電極 121 ないし124 共振素子 9 誘電体板 221 ないし224 金属薄層 1012ないし1034 回転電極板 1112ないし1134 回転支軸 13 誘電体板 1412ないし1441 金属薄層 151 ないし154 固体誘電体 161 及び162 入出力結合容量素子 1712ないし1741 段間結合容量形成素子1 Shield case 2 1 to 2 4 Resonance element 3 1 to 3 4 Resonance frequency fine adjustment element 4 1 to 4 4 Lock nut 5 12 to 5 34 Variable capacitance element for coupling between stages 6 12 to 6 34 Rotating spindle 7 Solid Dielectric 8 1 to 8 4 Electrode 12 1 to 12 4 Resonant Element 9 Dielectric Plate 22 1 to 22 4 Thin Metal Layer 10 12 to 10 34 Rotating Electrode Plate 11 12 to 11 34 Rotating Spindle 13 Dielectric Plate 14 12 to 14 41 Thin metal layer 15 1 to 15 4 Solid dielectric 16 1 and 16 2 Input / output coupling capacitance element 17 12 to 17 41 Interstage coupling capacitance forming element
Claims (7)
れた段間結合用容量素子を備えたことを特徴とする帯域
通過ろ波器。1. A band pass filter comprising an inter-stage coupling capacitive element interposed between resonant elements magnetically coupled to each other.
請求項1に記載の帯域通過ろ波器。2. The band pass filter according to claim 1, wherein the inter-stage coupling capacitive element is a variable capacitive element.
請求項1に記載の帯域通過ろ波器。3. The bandpass filter according to claim 1, wherein the interstage coupling capacitive element is a fixed capacitive element.
記載の帯域通過ろ波器。4. The bandpass filter according to claim 1, wherein the resonant element is a coaxial resonant element.
軸共振素子である請求項1に記載の帯域通過ろ波器。5. The bandpass filter according to claim 1, wherein the resonant element is a coaxial resonant element forming a coaxial dielectric resonator.
に固定した金属板をほぼコの字型に折り曲げ、他端とシ
−ルドケ−スの底壁との間に空隙を設けて成るリング共
振素子である請求項1に記載の帯域通過ろ波器。6. A resonator element has a metal plate, one end of which is fixed to a bottom wall of a shield case, is bent into a substantially U-shape, and an air gap is provided between the other end and the bottom wall of the shield case. The band pass filter according to claim 1, which is a ring resonant element provided.
1に記載の帯域通過ろ波器。7. The bandpass filter according to claim 1, wherein the resonant element is a helical resonant element.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34825993A JPH07193404A (en) | 1993-12-24 | 1993-12-24 | Band pass filter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34825993A JPH07193404A (en) | 1993-12-24 | 1993-12-24 | Band pass filter |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH07193404A true JPH07193404A (en) | 1995-07-28 |
Family
ID=18395832
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP34825993A Pending JPH07193404A (en) | 1993-12-24 | 1993-12-24 | Band pass filter |
Country Status (1)
Country | Link |
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JP (1) | JPH07193404A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008182303A (en) * | 2007-01-23 | 2008-08-07 | Matsushita Electric Ind Co Ltd | Filter device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6360603A (en) * | 1986-08-29 | 1988-03-16 | Murata Mfg Co Ltd | Dielectric filter |
JPH05183305A (en) * | 1991-12-30 | 1993-07-23 | Nippon Dengiyou Kosaku Kk | Band pass filter |
-
1993
- 1993-12-24 JP JP34825993A patent/JPH07193404A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6360603A (en) * | 1986-08-29 | 1988-03-16 | Murata Mfg Co Ltd | Dielectric filter |
JPH05183305A (en) * | 1991-12-30 | 1993-07-23 | Nippon Dengiyou Kosaku Kk | Band pass filter |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008182303A (en) * | 2007-01-23 | 2008-08-07 | Matsushita Electric Ind Co Ltd | Filter device |
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