JPH07176796A - Thermoelectric converter - Google Patents
Thermoelectric converterInfo
- Publication number
- JPH07176796A JPH07176796A JP5318699A JP31869993A JPH07176796A JP H07176796 A JPH07176796 A JP H07176796A JP 5318699 A JP5318699 A JP 5318699A JP 31869993 A JP31869993 A JP 31869993A JP H07176796 A JPH07176796 A JP H07176796A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- thermoelectric conversion
- heat
- type
- conversion device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 9
- 125000006850 spacer group Chemical group 0.000 claims abstract description 3
- 238000006243 chemical reaction Methods 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 31
- 239000011347 resin Substances 0.000 claims description 8
- 229920005989 resin Polymers 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 abstract description 5
- 238000005476 soldering Methods 0.000 abstract description 4
- 239000002470 thermal conductor Substances 0.000 abstract 1
- 238000000605 extraction Methods 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 230000005855 radiation Effects 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical group [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、熱電変換装置に関する
もので、例えば冷温蔵庫やウオータクーラなどに用いら
れる。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermoelectric conversion device, which is used in, for example, a cold storage cabinet or a water cooler.
【0002】[0002]
【従来の技術】本発明に係わる従来技術としては、例え
ば実開昭63−86960号に開示されたものがある。
この従来技術の熱電変換装置を図6に基づいて説明する
と、吸熱側熱交換器101と放熱側熱交換器102と間
に、熱電変換素子103を挟持しており、両熱交換器1
01,102間の熱リークを防止するために、両熱交換
器101,102間に断熱材製の連結体104と伝熱ブ
ロック105が配設されている。ここで、伝熱ブロック
105はアルミなどの良熱伝導体から形成され、両熱交
換器101,102間の距離を稼ぐために厚く形成され
る。両熱交換器101,102も同様にアルミなどの良
熱伝導体から形成される。また、熱電変換素子103は
P型およびN型半導体を両面からアルミナ基板で挟むよ
うにして形成されている。2. Description of the Related Art As a prior art relating to the present invention, there is, for example, the one disclosed in Japanese Utility Model Laid-Open No. 63-86960.
This thermoelectric conversion device of the prior art will be described with reference to FIG. 6. A thermoelectric conversion element 103 is sandwiched between a heat absorption side heat exchanger 101 and a heat radiation side heat exchanger 102, and both heat exchangers 1
In order to prevent a heat leak between 01 and 102, a heat insulating material coupling body 104 and a heat transfer block 105 are arranged between both heat exchangers 101 and 102. Here, the heat transfer block 105 is formed of a good heat conductor such as aluminum, and is formed thick to increase the distance between the heat exchangers 101 and 102. Both heat exchangers 101 and 102 are also made of a good heat conductor such as aluminum. The thermoelectric conversion element 103 is formed by sandwiching P-type and N-type semiconductors from both sides with an alumina substrate.
【0003】ところで、アルミナ基板はその熱伝導性
が、金属つまり熱交換器102や伝熱ブロック105に
比べて悪いために熱抵抗が大きくなり、熱電変換装置の
効率が悪いといった不具合がある。By the way, the thermal conductivity of the alumina substrate is worse than that of the metal, that is, the heat exchanger 102 and the heat transfer block 105, so that the thermal resistance becomes large and the efficiency of the thermoelectric conversion device is poor.
【0004】[0004]
【発明が解決しようとする課題】そこで、熱電変換装置
の効率向上を、本発明の技術的課題とする。Therefore, it is a technical subject of the present invention to improve the efficiency of the thermoelectric conversion device.
【0005】[0005]
【課題を解決するための手段】上記課題を解決するため
に、本発明においては、良熱伝導性基板と、該良熱伝導
性基板上に形成される電気絶縁樹脂層と、該電気絶縁樹
脂層上にパターンニングされる第1電極と、該第1電極
上にその一面が接合されるP型およびN型半導体と、該
P型およびN型半導体の他面に接合される第2電極とか
らなる熱電変換素子を熱交換器で挟持することで熱電変
換装置を構成した。In order to solve the above problems, in the present invention, a good thermal conductive substrate, an electrically insulating resin layer formed on the good thermally conductive substrate, and the electrically insulating resin are provided. A first electrode patterned on the layer, a P-type and N-type semiconductor having one surface bonded to the first electrode, and a second electrode bonded to the other surface of the P-type and N-type semiconductor A thermoelectric conversion device was constructed by sandwiching the thermoelectric conversion element consisting of the elements with a heat exchanger.
【0006】[0006]
【作用】上記した手段によれば、熱電変換素子に第1、
第2電極を介して電力を供給すると一方の熱交換器から
他方の熱交換器へと熱が運ばれる。According to the above means, the thermoelectric conversion element has the first,
When electric power is supplied through the second electrode, heat is transferred from one heat exchanger to the other heat exchanger.
【0007】[0007]
【実施例】図1〜5に基づいて本発明実施例を説明する
と、熱電変換装置10は例えばアルミなどの良熱伝導体
から形成される吸熱側及び放熱側熱交換器11,12を
有しており、熱電変換素子20を挟持している。ここ
で、熱電変換素子20の回りは断熱材(例えばPPS:
ポリフェニレンサルファイド製)13で包囲され、断熱
材13も両熱交換器11,12間に挟持される。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A preferred embodiment of the present invention will be described with reference to FIGS. 1 to 5. A thermoelectric conversion device 10 has heat absorption side and heat dissipation side heat exchangers 11 and 12 formed of a good heat conductor such as aluminum. The thermoelectric conversion element 20 is sandwiched. Here, around the thermoelectric conversion element 20, a heat insulating material (for example, PPS:
It is surrounded by polyphenylene sulfide 13), and the heat insulating material 13 is also sandwiched between the heat exchangers 11 and 12.
【0008】熱電変換素子20について詳述すると、例
えばアルミまたはアルミ系金属や銅または銅系金属製な
どの良熱伝導性基板21の上に、電気絶縁樹脂層22を
接着などの方法により形成し、この樹脂層22上に例え
ば銅からなる第1電極23をエッチングなど公知の適宜
方法によってパターンニングする。第1電極23上には
P型およびN型半導体24の一面が半田付けなどの方法
によって接合される。The thermoelectric conversion element 20 will be described in detail. For example, an electrically insulating resin layer 22 is formed on the good heat conductive substrate 21 made of aluminum or aluminum-based metal, copper or copper-based metal by a method such as adhesion. The first electrode 23 made of, for example, copper is patterned on the resin layer 22 by a known appropriate method such as etching. One surface of the P-type and N-type semiconductor 24 is bonded onto the first electrode 23 by a method such as soldering.
【0009】また、P型およびN型半導体24の他面に
は同じく半田付けなどの方法によって第2電極25が接
合される。この際、P型およびN型半導体24は第1,
第2電極23,25によって電気的に直列にかつ交互に
接続される。一般に、P型およびN型半導体24は複数
個用意される。The second electrode 25 is also joined to the other surface of the P-type and N-type semiconductors 24 by a method such as soldering. At this time, the P-type and N-type semiconductors 24 are
The second electrodes 23 and 25 are electrically connected in series and alternately. Generally, a plurality of P-type and N-type semiconductors 24 are prepared.
【0010】また、良熱伝導性基板21は適宜厚く形成
され、スペーサブロックとして作用するので、両熱交換
器11,12間の距離を大きくとることができ、両熱交
換器11,12間の熱リークを最小限に抑えられる。Further, since the good heat conductive substrate 21 is formed appropriately thick and acts as a spacer block, the distance between the heat exchangers 11 and 12 can be made large and the distance between the heat exchangers 11 and 12 can be increased. Minimize heat leak.
【0011】尚、図1に示す実施例のように例えばアル
ミナ基板26上にパターンニングされた第2電極25を
P型およびN型半導体24上に接合したり、図2に示す
実施例のように第2電極25片をアルミナ基板を介さず
に放熱側熱交換器12と直接係合させても良い。この場
合、放熱側熱交換器12にはアルマイトなどの絶縁処理
を施しておく必要がある。また、図1に示す実施例の場
合には、吸熱側熱交換器11と良熱伝導性基板21との
間、および放熱側熱交換器12とアルミナ基板26との
間に熱伝導性グリス27を塗布するとよく、図2に示す
実施例の場合には、吸熱側熱交換器11と良熱伝導性基
板21との間、および放熱側熱交換器12と第2電極2
5との間に熱伝導性グリス27を塗布するとよい。Incidentally, as in the embodiment shown in FIG. 1, for example, the second electrode 25 patterned on the alumina substrate 26 is bonded onto the P-type and N-type semiconductors 24, or as in the embodiment shown in FIG. Alternatively, the second electrode 25 piece may be directly engaged with the heat radiation side heat exchanger 12 without the alumina substrate. In this case, the heat radiation side heat exchanger 12 needs to be subjected to an insulating treatment such as alumite. In the case of the embodiment shown in FIG. 1, the heat conductive grease 27 is provided between the heat absorption side heat exchanger 11 and the good heat conductive substrate 21 and between the heat radiation side heat exchanger 12 and the alumina substrate 26. 2 may be applied. In the case of the embodiment shown in FIG. 2, between the heat absorption side heat exchanger 11 and the good thermal conductive substrate 21, and between the heat radiation side heat exchanger 12 and the second electrode 2.
Thermally conductive grease 27 may be applied between the two.
【0012】ところで、熱電変換装置10の性能を向上
するために、熱交換器の熱源を分散させる目的から、第
1、第2電極23,25およびP型およびN型半導体2
4を複数集合させてなる群30a〜30d(図3参照)
を離間させて良熱伝導性基板21上に複数配設しても良
い。図3のような配置の場合でも、もちろん図1,2に
示した場合と同じく、図4に示す実施例のように例えば
アルミナ基板26上にパターンニングされた第2電極2
5をP型およびN型半導体24上に接合したり、図5に
示す実施例のように第2電極25片をP型およびN型半
導体24上に直接接合しても良い。尚、図4,5では電
気絶縁樹脂層22を図示省略しているが、実際に省略し
て良熱伝導性基板21を非導電材製基板から形成するこ
ともできる。この構成は従来の基板付熱電変換ユニット
(つまり群)を複数個分散配置するのに比べて次のよう
なメリットがある。 熱電変換装置10を作動させるた
めには、群30a〜30dの全てに電力を供給しなけれ
ばならない。このために、接続電極32,33,34と
引出電極35,36が基板21上に形成される。このよ
うに群30間は接続電極32〜34で接続し電力供給用
の電極は引出電極35,36に担当させることで、群3
0の数に係わらず、引出電極35,36は一対だけでよ
いことがわかる。従来のユニットではユニット数の2倍
の引出電極が存在する。図3に示す実施例では、群30
a〜dを直列接続しているが、接続電極32〜34の構
成を適宜変更して並列接続としても良い。その場合、従
来のようにユニット間をリード線で接続しないので、直
列/並列の誤組付けの心配がない。また、引出電極3
5,36は断熱材13中を貫通する。37はシールリン
グを示す。By the way, in order to improve the performance of the thermoelectric conversion device 10, the first and second electrodes 23 and 25 and the P-type and N-type semiconductors 2 are used for the purpose of dispersing the heat source of the heat exchanger.
Groups 30a to 30d formed by collecting a plurality of 4 (see FIG. 3)
A plurality of them may be separated from each other and arranged on the good thermal conductive substrate 21. Even in the case of the arrangement shown in FIG. 3, of course, as in the case shown in FIGS. 1 and 2, the second electrode 2 patterned on the alumina substrate 26 as in the embodiment shown in FIG.
5 may be bonded to the P-type and N-type semiconductors 24, or the second electrode 25 piece may be directly bonded to the P-type and N-type semiconductors 24 as in the embodiment shown in FIG. Although the electrically insulating resin layer 22 is not shown in FIGS. 4 and 5, it is also possible to actually omit it and form the good thermal conductive substrate 21 from a non-conductive material substrate. This configuration has the following merits as compared with the conventional arrangement of a plurality of thermoelectric conversion units with substrates (that is, groups). In order to operate the thermoelectric conversion device 10, power must be supplied to all of the groups 30a to 30d. For this purpose, the connection electrodes 32, 33, 34 and the extraction electrodes 35, 36 are formed on the substrate 21. In this way, the groups 30 are connected by the connection electrodes 32 to 34, and the extraction electrodes 35 and 36 are in charge of the electrodes for power supply.
It can be seen that regardless of the number of 0, only one pair of extraction electrodes 35 and 36 is required. In the conventional unit, there are twice as many extraction electrodes as there are units. In the embodiment shown in FIG. 3, the group 30
Although a to d are connected in series, the structures of the connection electrodes 32 to 34 may be appropriately changed to be connected in parallel. In that case, since the lead wires are not connected between the units as in the conventional case, there is no fear of incorrect assembly in series / parallel. In addition, the extraction electrode 3
Reference numerals 5 and 36 penetrate through the heat insulating material 13. 37 indicates a seal ring.
【0013】熱電変換装置10に用いられる電極につい
て見てみると、第1,第2電極23,25は公知(実開
昭62−158850号など)のとおり同一形状とする
ことができ、接続電極32〜34及び引出電極35,3
6だけが形状を異にしている。このことは、熱電変換装
置10の製造にとって非常に有利である。つまり、特に
図2,5の実施例の場合に有利であるが、これらの実施
例では、第1電極23,接続電極32〜34及び引出電
極35,36はパターンニングにより形成するため特に
問題ないが、第2電極25は電極片として準備されるの
で、準備される電極片が全て同一形状となり、誤組付の
心配がない上、在庫管理他様々な面できわめて効果が大
きい。尚、群30間の間隔や引出電極35,36に接続
するリード線を工夫することで、接続電極32〜34及
び引出電極35,36も第1,第2電極23,25と同
一形状にすることも可能であり、この場合には更に生産
性が高まる。Looking at the electrodes used in the thermoelectric conversion device 10, the first and second electrodes 23 and 25 can have the same shape as is well known (Japanese Utility Model Publication No. 62-158850, etc.), and the connection electrodes 32-34 and extraction electrodes 35, 3
Only 6 has a different shape. This is very advantageous for manufacturing the thermoelectric conversion device 10. That is, this is particularly advantageous in the case of the embodiments of FIGS. 2 and 5, but in these embodiments, since the first electrode 23, the connection electrodes 32 to 34, and the extraction electrodes 35 and 36 are formed by patterning, there is no particular problem. However, since the second electrode 25 is prepared as an electrode piece, all the prepared electrode pieces have the same shape, there is no fear of incorrect assembly, and the effect is extremely great in various aspects such as inventory control. Incidentally, the connection electrodes 32 to 34 and the extraction electrodes 35, 36 have the same shape as the first and second electrodes 23, 25 by devising a space between the groups 30 and a lead wire connected to the extraction electrodes 35, 36. It is also possible, and in this case the productivity is further increased.
【0014】[0014]
【発明の効果】良熱伝導性基板を用いて熱電変換素子を
形成しているので、熱抵抗となる部分が減り熱電変換装
置の吸熱面から放熱面への熱輸送量が増大して熱電変換
装置の効率が向上する。特に、良熱伝導性基板と第1,
第2電極を同一または線膨張率が近い材料同士で形成す
れば、繰り返される熱応力によって電極と基板との接合
状態に悪影響を及ぼさない。従来のアルミナ基板より、
銅基板やアルミ基板の方が導電極の線膨張率に近いので
有利である。Since the thermoelectric conversion element is formed by using the good heat conductive substrate, the portion which becomes the thermal resistance is reduced and the amount of heat transport from the heat absorbing surface to the heat radiating surface of the thermoelectric conversion device is increased, so that the thermoelectric conversion is performed. The efficiency of the device is improved. In particular, a good thermal conductive substrate and
If the second electrode is formed of materials having the same or similar linear expansion coefficients, repeated thermal stress does not adversely affect the joining state between the electrode and the substrate. From the conventional alumina substrate,
Copper substrates and aluminum substrates are advantageous because they are closer to the linear expansion coefficient of the conductive electrode.
【図1】本発明に係わる熱電変換装置の構成図FIG. 1 is a configuration diagram of a thermoelectric conversion device according to the present invention.
【図2】図1の要部代替図FIG. 2 is an alternative view of a main part of FIG.
【図3】他の実施例の熱電変換装置の上面透視図FIG. 3 is a top perspective view of a thermoelectric conversion device according to another embodiment.
【図4】図3にて示されたA−A断面図4 is a cross-sectional view taken along the line AA shown in FIG.
【図5】図3にて示されたA−A断面図(別実施例)5 is a sectional view taken along line AA shown in FIG. 3 (another embodiment).
【図6】従来技術の熱電変換装置FIG. 6 Prior art thermoelectric converter
10 熱電変換装置 11 熱電変換素子 21 良熱伝導性基板 22 電気絶縁樹脂層 23 第1電極 24 P型およびN型
半導体 25 第2電極10 Thermoelectric Conversion Device 11 Thermoelectric Conversion Element 21 Good Thermal Conductivity Substrate 22 Electrical Insulation Resin Layer 23 First Electrode 24 P-type and N-type Semiconductor 25 Second Electrode
Claims (7)
に形成される電気絶縁樹脂層と、該電気絶縁樹脂層上に
パターンニングされる第1電極と、該第1電極上にその
一面が接合されるP型およびN型半導体と、該P型およ
びN型半導体の他面に接合される第2電極とからなる熱
電変換素子を熱交換器で挟持したことを特徴とする熱電
変換装置。1. A good thermal conductive substrate, an electrically insulating resin layer formed on the good thermally conductive substrate, a first electrode patterned on the electrically insulating resin layer, and on the first electrode. A thermoelectric conversion element comprising a P-type and N-type semiconductor whose one surface is joined to the second surface and a second electrode which is joined to the other surface of the P-type and N-type semiconductor, sandwiched by a heat exchanger. Thermoelectric converter.
として作用する請求項1記載の熱電変換装置。2. The thermoelectric conversion device according to claim 1, wherein the good thermal conductive substrate acts as a spacer block.
ミ系金属からなる請求項1記載の熱電変換装置。3. The thermoelectric conversion device according to claim 1, wherein the good thermal conductive substrate is made of aluminum or an aluminum-based metal.
からなる請求項1記載の熱電変換装置。4. The thermoelectric conversion device according to claim 1, wherein the good thermal conductive substrate is made of copper or copper-based metal.
求項2または3記載の熱電変換装置。5. The thermoelectric conversion device according to claim 2, wherein the first and second electrodes are made of copper.
型半導体を複数集合させて群を形成し、前記良熱伝導性
基板上に前記群を離間させて複数配設した請求項1記載
の熱電変換装置。6. The first and second electrodes and P-type and N-type
The thermoelectric conversion device according to claim 1, wherein a plurality of type semiconductors are collected to form a group, and the plurality of groups are spaced apart from each other and arranged on the good thermal conductive substrate.
基板上に形成することを特徴とする請求項6記載の熱電
変換装置。7. The thermoelectric conversion device according to claim 6, wherein the connection electrodes between the groups are formed on the good thermal conductive substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31869993A JP3404841B2 (en) | 1993-12-17 | 1993-12-17 | Thermoelectric converter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31869993A JP3404841B2 (en) | 1993-12-17 | 1993-12-17 | Thermoelectric converter |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH07176796A true JPH07176796A (en) | 1995-07-14 |
JP3404841B2 JP3404841B2 (en) | 2003-05-12 |
Family
ID=18102019
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP31869993A Expired - Lifetime JP3404841B2 (en) | 1993-12-17 | 1993-12-17 | Thermoelectric converter |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3404841B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0936438A (en) * | 1995-07-19 | 1997-02-07 | Technova:Kk | Thermoelectric converter |
US5959240A (en) * | 1996-12-04 | 1999-09-28 | Ngk Insulators, Ltd. | Thermoelectric converter for heat-exchanger |
EP1635405A2 (en) * | 2004-09-09 | 2006-03-15 | LG Electronics Inc. | Thin film thermoelectric module |
WO2007044517A1 (en) * | 2005-10-06 | 2007-04-19 | Borealis Technical Limited | Thermionic/thermotunneling thermo-electrical converter |
JP2013138555A (en) * | 2011-12-28 | 2013-07-11 | Daihatsu Motor Co Ltd | On-vehicle power generation system |
-
1993
- 1993-12-17 JP JP31869993A patent/JP3404841B2/en not_active Expired - Lifetime
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0936438A (en) * | 1995-07-19 | 1997-02-07 | Technova:Kk | Thermoelectric converter |
US5959240A (en) * | 1996-12-04 | 1999-09-28 | Ngk Insulators, Ltd. | Thermoelectric converter for heat-exchanger |
EP1635405A2 (en) * | 2004-09-09 | 2006-03-15 | LG Electronics Inc. | Thin film thermoelectric module |
EP1635405A3 (en) * | 2004-09-09 | 2009-06-03 | LG Electronics Inc. | Thin film thermoelectric module |
WO2007044517A1 (en) * | 2005-10-06 | 2007-04-19 | Borealis Technical Limited | Thermionic/thermotunneling thermo-electrical converter |
JP2013138555A (en) * | 2011-12-28 | 2013-07-11 | Daihatsu Motor Co Ltd | On-vehicle power generation system |
Also Published As
Publication number | Publication date |
---|---|
JP3404841B2 (en) | 2003-05-12 |
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