JPH0677259A - Method and device for forming wiring, and specimen holder for forming wiring - Google Patents

Abstract

(57) [Abstract] [Purpose] Deterioration of film quality and film formation due to the influence of the CVD material gas remaining in the chamber when a wiring is formed on the surface of a semiconductor device by laser CVD in which plural kinds of CVD material gases are sequentially used. Prevent slowdown. [Structure] Among the CVD material gases to be used, those which adversely affect at least another CVD material gas are semiconductor devices 2
A lid 41 having a portion for transmitting the laser beam 9 and capable of being sealed is placed and fixed on a holder 6 for fixing the lid 5.
The above CVD material gas is supplied and confined inside 1, and in that state, it is conveyed into the laser CVD chamber 1 and the laser light 9
To form a film of the material. [Effect] As a result, the CVD material gas that affects the other CVD material gas does not remain in the laser CVD chamber because it does not remain, and the film quality is deteriorated during the film formation by the other CVD material gas, and the film formation speed is increased. Can be prevented from occurring.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique of laying wiring on the surface of a semiconductor device, and is particularly suitable for identifying and repairing a defective portion when a partial defect exists in a prototyped semiconductor device. Wiring formation technology.

[0002]

2. Description of the Related Art Miniaturization and high integration of semiconductor devices have been advanced in order to improve the performance and speed of semiconductor devices. Along with this, the development of semiconductor devices has become difficult, leading to a prolonged development. This situation indicates that the circuit design technique of cut-and-try is also necessary for LSI design. That is, a defective portion on the chip that does not operate sufficiently in the conventional design is identified, and the wiring existing in the portion is cut, a wiring is formed at an arbitrary portion, or the defective portion is repaired to provisionally complete the defect. If a semiconductor device that can achieve various operations is manufactured, subsequent characteristic evaluation and design change can be performed quickly.

On the other hand, as the prior art, for example, Extended Abstracts of the Seven Taines
Conference on Solid State Devices and Materials (1985) Pages 193 to 196 (Extended Abstracts of the17th Conference on Soli
d State Devices and Materials, Tokyo, 1985, pp.193-19
As described in 6) and the like, a technique of forming a Mo wiring on a Si substrate covered with SiO ₂ by using a laser CVD technique is shown. In addition, JP-A-62-1299
Japanese Laid-Open Patent Publication No. 57-57 discloses a method of forming an insulating film by using the same laser CVD technique to prevent short circuits when wirings formed by laser CVD are crossed.

By combining these technologies,
Arbitrary wiring can be formed on the LSI, and repair of defective parts, subsequent characteristic evaluation, and design change can be performed quickly.
As described above.

[0005]

However, in these prior arts, there is no mention of the problem when a plurality of material gases are used in one chamber. That is, when the material gas for forming the wiring and the material gas for forming the insulating film are alternately confined in the same chamber, or when the respective material gases are alternately blown from the nozzle, laser CVD is performed respectively. These material gases affect each other, resulting in problems such as deterioration of film quality or extremely low film formation rate.

Specifically, Mo is used as a material gas for wiring formation.
When the wiring and the insulating film are formed in the same chamber by using (CO) ₆ (molybdenum / hexacarbonyl) and TEOS (tetraethyl orthosilicate) as a material gas for forming the insulating film, after forming the insulating film with TEOS , Mo (C
When wiring is formed with (O) ₆ , the TEO remaining in the chamber
Due to the influence of S, the film formation rate of Mo wiring is extremely reduced. Therefore, even if the wiring is formed under the same conditions, the wiring resistance after forming the insulating film becomes high, and there is a problem that the purpose cannot be achieved.

An object of the present invention is to eliminate mutual influences between material gases and connect arbitrary locations on a semiconductor device when sequentially forming films of a plurality of materials by using a plurality of material gases by laser CVD. An object of the present invention is to provide a wiring forming technique that can be performed.

[0008]

[Means for Solving the Problems] The above-mentioned object is, at least for material gases that affect other material gases,
Use a dedicated small closed container (sample holder) to confine the sample and material gas in it, and transport the whole small closed container (sample holder) to the chamber for laser CVD, and perform laser CVD in it. This prevents the material gas from remaining in the chamber where the laser CVD is performed and from coming into contact with other material gases.

[0009]

The function of Mo (CO) ₆ and TEOS will be described. When wiring is formed, Mo (CO) ₆ is supplied to the laser CV.
The sample is confined in a chamber and the laser is irradiated onto the sample. Next, when an insulating film is formed, the sample is put in a small airtight container in another room, TEOS vapor is supplied and confined in the airtight container, and the sample is laser-CVed together with the airtight container.
It is again transported into the chamber for performing D to form an insulating film in the closed container. After that, the sample is taken out of the closed container again by being transported to another room, and then the sample is again transported to the chamber where laser CVD is performed, Mo (CO) ₆ is confined in the chamber where laser CVD is performed, and the laser is irradiated onto the sample. , Mo are formed. As a result, TEOS is not supplied into the chamber in which laser CVD is performed, and TEOS remains without any influence.

That is, since the gas that easily remains and the gas that easily affects other gases are not directly supplied into the chamber for performing the laser CVD, the above-mentioned problem is solved.

Incidentally, as a structurally similar one, Japanese Patent Laid-Open No.
-503551 is known, which is a dual chamber for performing a reaction under a low gas pressure and a thin window for laser transmission, which prevents mutual influence of plural kinds of material gases. Is not considered at all, which is different from the intention of the present invention.

[0012]

The present invention will be described in detail below with reference to the drawings. FIG. 1 is a diagram showing the overall configuration of a wiring connection device according to an embodiment of the present invention. In this apparatus, a laser CVD chamber 1, a load lock chamber 2, a gas supply chamber 3 are connected via gate valves 4 and 5, and an XYZ stage for mounting a sample holder 6 in the laser CVD chamber 1. 7 and a quartz window 10 for transmitting a laser beam 9 oscillated from a laser oscillator 8 are installed and connected to a vacuum pump 12 via a valve 11 and a material gas cylinder 14 for forming wiring, for example, via a valve 13. Has been done. The load lock chamber 2 is connected to the vacuum pump 12 via a valve 15. The gas supply chamber 3 is connected to the vacuum pump 12 via the valve 27 and the valve 16
To the vacuum pump 17 via, another via the valve 18,
For example, it is connected to a material gas cylinder 19 for forming an insulating film. Further, the laser light 9 is condensed by the objective lens 20, but at the same time, the illumination light source 21 and the imaging lens 2
2. The surface of the sample 25 on the sample holder 6 can be observed by the TV camera 23 and the monitor 24. Here, the objective lens 20 is installed inside the laser CVD chamber 1, but by installing a plurality of lenses on the turret as in a normal microscope, for example, when wiring is formed, a high NA and high magnification are used. When forming an insulating film, a lens having a low NA and a low magnification can be used.

Next, the operation of this device will be described. Sample 2
The sample holder 6 carrying 5 is introduced into the load lock chamber 2, the valve 15 is opened to evacuate the load lock chamber 2 and the X in the laser CVD chamber 1 is passed through the gate valve 4.
It is placed on the YZ stage 7. Here, laser CVD
After the chamber 1 has been sufficiently evacuated by the vacuum pump 12, the valve 11 is first closed, and the material gas for forming wiring from the material gas cylinder 14, for example Mo (CO) _6, is kept at a constant pressure, for example, 0.1 Torr. Supply and valve 1
Close 3. After that, the laser beam 9 oscillated from the laser oscillator 8 is transmitted through the quartz window 10 and is irradiated onto the sample 25 while being condensed by the objective lens 20, and Mo is deposited and embedded in the connection hole formed in advance. . After burying all the connection holes, Mo wiring is formed and connected by moving the XYZ stage 7 while irradiating a laser between the connection holes which require connection. Here, the position of the connection hole and the route of the wiring are given to the control device (not shown) of the stage 7 as correction data in advance so that the positioning is automatically performed.
And the stage can be driven. By repeating this procedure, all the Mo wirings of the first layer are formed. After that, the valve 13 is opened to evacuate Mo (CO) ₆ in the laser CVD chamber 1 to make a vacuum state, and then the gate valve 4 is opened to move the sample holder 6 to the load lock chamber 2. Further, the gate valve 5 is opened and transferred to the material gas supply chamber 3.

The procedure of supplying the insulating film forming material gas, eg, TEOS, in the material gas supply chamber 3 will be described with reference to FIG. The sample holder 6 is provided with a TEOS supply port 31 via a valve 32 and a vacuum exhaust port 33 via a valve 34. The sample holder 6 is pressed against the base plate 35, and the O-rings 36 and 37 make the TEOS supply pipe 38 and the vacuum exhaust pipe 3 airtight.
9 is connected. A mini-chamber 41 having a quartz window 40 is placed on the sample holder 6, fixed with screws 43 and 43 ′, and sealed with an O-ring 44 while maintaining an airtight state. In this state, open the valve 34 to open the mini chamber 41.
After exhausting the inside sufficiently, the valve 34 is closed. Next, the valve 32 is opened to supply TEOS, and after supplying a constant amount of TEOS or TEOS to a constant pressure, the valve 3
2 is closed and TEOS is locked.

Next, the procedure of opening the valve 48 to sufficiently exhaust the TEOS supply pipe 38, introducing an inert gas to the atmospheric pressure, and then exhausting it, is repeated. This operation has the same effect when the inert gas is kept flowing for a certain period of time and exhausted at the end. After that, the pressing mechanism (not shown) of the mini chamber 41 is released, the gate valve 5 and the gate valve 4 are sequentially opened to fix the mini chamber 41,
The sample holder 6 containing the TEOS is transferred to the laser CVD chamber 1 and fixed on the XYZ stage 7. again,
The stage controller (not shown) moves the XYZ stage 7 according to the data, and irradiates the laser light 9 on the Mo wiring at the portion where the Mo wiring intersects. At this time, depending on the width of the intersecting Mo wiring, the laser light is moved at a constant pitch or is scanned at a constant speed.
The area where the SiO ₂ film is formed can be changed. As a result, the SiO ₂ film is deposited only on the portion irradiated with the laser due to the thermal decomposition of TEOS, and a local interlayer insulating film is formed. When the formation of the SiO ₂ film is completed on all the Mo wirings where the Mo wirings intersect, the sample holder 6 is moved to the material gas supply chamber 3 again and pressed against the base plate 35. Next, the valve 34 is opened and the TEOS gas in the mini chamber 41 is exhausted. At this time, an inert gas such as nitrogen or argon may be continuously purged for a certain period of time if necessary. After TEOS is sufficiently exhausted, the screw 43 is removed to remove the mini chamber 41, and the sample holder 6 is again moved to the laser CVD chamber 1 with the sample 25 exposed.

Here, the Mo wiring is formed again by the same procedure as when the Mo wiring is first formed. At this time, if it intersects with the first Mo wiring, the Si formed by TEOS
It is formed so as to pass over the O ₂ film. As a result, the upper and lower Mo wirings do not short-circuit and function as independent wirings. By repeating this as necessary,
Theoretically, there is no limit to the number of wires that can be formed. Moreover, since only Mo (CO) ₆ is supplied to the laser CVD chamber 1, the inside of the laser CVD chamber 1 is not contaminated by TEOS, and the Mo wiring can always obtain a constant film formation rate. That is, if the forming conditions are made constant, a wiring having a constant film thickness and a constant width can be obtained.

In the above description, the material supply chamber 3 is used for confining the TEOS, and the working procedure under vacuum has been described, but it is not always necessary to perform under vacuum. The material supply chamber 3 may be installed independently and the operation may be performed under atmospheric pressure.
In that case, the sample holder 6 is taken out from the load lock chamber 2 via the gate valve 5, and the separately placed TE is placed.
It suffices to place the mini chamber 41 in the OS supply device to confine the TEOS, and then introduce the sample holder 6 into the load lock chamber 2 again via the gate valve 5.

Next, another embodiment will be described with reference to FIG. FIG. 3 shows a chamber configuration of a wiring connection device which is another embodiment of the present invention. A load lock chamber 52, a sputter etch chamber 53, a sputter deposition chamber 54, and a laser CV centering on the transfer chamber 51.
D chamber 55 has gate valves 56, 57 and 5 respectively.
It is connected via 8, 59. A gate valve 60 for loading and unloading the sample holder 6 is installed in the load lock chamber 52.

First, the procedure for connecting wiring will be described. Similar to FIGS. 1 and 2, the sample 25 having the connection hole formed therein is fixed to the sample holder 6 by, for example, focused ion beam processing, and the gate valve 60 is connected to the load lock chamber 52.
Introduce inside. Here, the load lock chamber 52 is evacuated to vacuum, the gate valve 56 is opened, and the transfer chamber 51 is opened.
The sample holder 6 is grasped by an arm (not shown) which is provided so as to be rotatable and expandable and retracted, and the sample holder 6 is drawn into the transfer chamber 51, and the gate valve 57 is opened and fixed in the sputter etch chamber 53. Here, while maintaining a constant pressure while introducing a constant flow rate of Ar gas, high-frequency power is applied between the electrode and the sample holder 6, Ar plasma is generated, and the sample surface is lightly etched by sputtering with Ar ions. Remove contaminants such as water and oil adhering to the surface.

Next, the sample holder 6 is moved to the sputter deposition chamber 54 by the arm in the transfer chamber 51.
Inside, and maintaining a constant pressure while introducing a constant flow rate of Ar gas, applying a DC voltage between the sample holder 6 and the Cr target, and generating Ar plasma to sputter the Cr target by sputtering with Ar ions and jumping out. C atoms on the sample surface
r Form a thin film. This Cr film is A at the bottom of the connection hole.
It has the function of reducing the connection resistance between 1 and Mo, and also has the function of improving the adhesion between the Mo wiring and the sample surface on the sample surface. The thickness of the Cr film is set in the range of 100 to 500 angstrom at the bottom of the connection hole.

After this, the sample holder 6 is moved to the transfer chamber 51.
XY inside the laser CVD chamber 55 by the inner arm
It is fixed on the Z stage. Laser CVD chamber 55
Mo (CO) ₆ gas at a constant pressure, for example, 0.1To
Introduce up to rr and keep that state. Therefore, laser CV
A Mo optical film is formed by irradiating an Ar laser with a laser optical system 62 (shown by a chain line) installed on the D chamber 55. Mo is embedded in the connection hole and then connected by Mo wiring. When the necessary connections are completed, the sample holder 6
Is transported into the sputter etch chamber 53 by the arm in the transport chamber 51, and the Cr film on the surface of the sample 25 is removed by sputtering Ar plasma. At this time,
The surface of the Mo wiring is also slightly scraped, but its effect is extremely small. Then, the sample holder 6 is returned to the load lock chamber 52 and taken out from the gate valve 60.

The sample holder 6 taken out is shown in FIGS.
As described above, the TEOS gas supply unit 61 attaches the mini-chamber 41, the TEOS is confined therein, and the TEOS gas is introduced again into the load lock chamber 52 from the gate valve 60, and the laser CVD is performed by the arm in the transfer chamber 51.
It is fixed on the XYZ stage in the chamber 55. Therefore, Ar laser is irradiated to form a SiO ₂ film at the intersecting portion on the Mo wiring. When the formation of the insulating film is completed at all the intersecting portions, the sample holder 6 is returned to the load lock chamber 52 by the arm in the transfer chamber 51 and taken out from the gate valve 60.

As shown in FIGS. 1 and 2, the sample holder 6 taken out has a TEOS gas supply portion 61 for TE inside.
After exhausting the OS, the mini chamber 41 is removed. And
The sample holder 6 with the sample 25 exposed is returned to the load lock chamber 52 via the gate valve 60.

The sample holder 6 is again transported into the sputter etch chamber 53 by the arm in the transport chamber 51, and the sample 25 and the TEOS adsorbed on the surfaces of the sample holder 6 are removed by sputter etching. . After that, the sample holder 6 is moved to the sputter deposition chamber 54 by the arm in the transfer chamber 51.
It is transported inside and a Cr film is formed on the surface of the sample 25. After that, the sample holder 6 is again fixed on the XYZ stage in the laser CVD chamber 55 by the arm in the transfer chamber 51. Then, in the laser CVD chamber 55,
Mo (CO) ₆ gas is introduced up to 0.1 Torr, Ar laser is irradiated by the laser optical system 62 to form a Mo film, and connection is performed. At this time, when it intersects with the Mo wiring formed first, the Mo wiring is passed through the portion where the insulating film is formed in the previous step to prevent a short circuit between the Mo wirings.

After forming all the required wirings, the sample holder 6 is transferred into the sputter etching chamber 53 by the arm in the transfer chamber 51, and the Cr film on the sample surface is removed. At this time, the surface of the Mo wiring is also slightly scraped, but the effect is extremely small. Then, the sample holder 6 is returned to the load lock chamber 52 by the arm in the transfer chamber 51 and taken out from the gate valve 60.
This completes all the connecting steps.

Here, the sample holder 6 is the TEOS supply unit 6
1 and the wiring connection device are carried in the atmosphere, and TEOS
Although it is handled in the atmosphere in the supply unit 61, the operation is
This is as described with reference to FIG. In the case of the present embodiment, the surfaces of the sample holder 6 and the sample 25 are exposed to TEOS gas,
Since TEOS adsorbed is removed by sputter etching, TEOS is not brought into the laser CVD chamber 55. Therefore, while the Mo wiring is being formed, the film formation rate of the wiring does not decrease due to the influence of TEOS, and impurities are not mixed in the Mo wiring. Can be formed.

Also, with the chamber structure shown in FIG. 4, the same working effect can be obtained. That is, centering on the transfer chamber 51, the sputter etch chamber 53, the sputter deposition chamber 54, the laser CVD chamber 55, and the TEOS.
The supply chamber 65 has gate valves 57, 58,
It is connected via 59 and 66. Where TEOS
The supply chamber 65 also serves as a load lock chamber, and allows the sample holder 6 with the sample 25 fixed thereto to be taken in and out from the gate valve 67. Here, the load lock chamber may be installed outside the gate valve 67 provided in the TEOS supply chamber 65, but it is functionally the same and will not be described here any further.

First, the gate valve 67 is opened and the sample 2
5 is fixed to the TEOS supply chamber 65
And the gate valve 67 is closed. The structure of the TEOS supply chamber 65 is the same as that of the gas supply chamber 3 shown in FIG.
The same as the above, and the inside of the TEOS supply chamber 65 is evacuated by the vacuum pump 12. After that, the sample holder 6
Is carried into the sputter etch chamber 53 to clean the surface of the sample 25, and then carried into the sputter deposition chamber 54 to form a Cr film on the surface of the sample 25. After that, the sample holder 6 is attached to the laser CVD chamber 5
The wafer is transported to the inside of No. 5 and is irradiated with Ar laser in a Mo (CO) ₆ atmosphere to fill the connection hole and form Mo wiring to connect the first layer. After forming the Mo wiring, the sample holder 6 is conveyed into the sputter etching chamber 53, and the Cr film on the surface of the sample 25 is removed by sputter etching. After that, the sample holder 6 is transferred into the TEOS supply chamber 65 and placed on the stage. At this time, the TEOS supply chamber 65 may be kept in a vacuum, or an inert gas or the like may be introduced up to the atmospheric pressure.

A mini-chamber 41 was placed on the sample holder 6 placed on the stage, fixed with screws 43, and then pressed against the stage, and connected to the TEOS supply pipe 38 and exhaust pipe 39 by O-rings 36 and 37. After that, the interior of the mini chamber 41 is sufficiently exhausted, and TEOS is supplied to a constant pressure through the TEOS supply pipe 38. This procedure is as described above.

With the TEOS enclosed in the mini-chamber 41, the sample holder 6 is transported into the laser CVD chamber 55 and irradiated with Ar laser to form a SiO ₂ film on the Mo wiring intersecting next. . After forming SiO ₂ on all the necessary parts, the sample holder 6 is transferred into the TEOS supply chamber 65.

Here, the sample holder 6 is pressed against the stage in the same manner as when TEOS is confined. So T
The EOS supply chamber 65 is filled with an inert gas, for example, nitrogen gas up to atmospheric pressure. Then, the valves 32 and 33 in the sample holder 6 are opened, and TEOS in the mini chamber 41 is opened.
Exhaust. After exhausting sufficiently, an inert gas is supplied into the mini-chamber 41 to the same pressure as that in the TEOS supply chamber 65, if necessary, and the screw 43 is removed to remove the mini-chamber 41.

The sample holder 6 in which the sample 25 is exposed is transferred to the sputter etching chamber 53 to carry out sputter etching, and then transferred to the sputter deposition chamber 54 to form a Cr film on the surface of the sample 25. Laser CV
It is transported into the D chamber 55 and the Mo wiring of the second layer is formed. At this time, when it intersects with the Mo wiring of the _first layer, it passes over the SiO ₂ film formed in the previous step. As a result, the Mo wires do not short-circuit with each other and function as independent wires.

After that, the sample holder 6 is conveyed into the sputter etching chamber 53, and the unnecessary Cr film is removed, and the T
After being transported into the EOS supply chamber 65 and filling the TEOS supply chamber 65 with an inert gas, the gate valve 67 is opened, the sample holder 6 is taken out, and the wiring connection is completed.

Next, the wiring connection process according to the present invention will be described again with reference to the drawings. FIG. 5 (1) shows a partial cross section of an LSI chip that requires wiring connection. That is, S
A plurality of layers of Al wirings 103 and 104 are formed on the thermally oxidized SiO 2 film 102 formed on the i substrate 101.
Here, the case of two layers will be described. An interlayer insulating film 105 is formed between the Al wiring layers, and a protective film (S
An iO2 film) 106 is formed. Here, connection holes 107 and 108 are formed in the protective film 106 or the interlayer insulating film 105 on the Al wirings 103 and 104 to be connected by a FIB (Focused Ion Beam) processing device.

The LSI chip is subjected to sputter etching in a sputter etching chamber to remove water and other contaminants adhering to the surface of the chip, and exposed inside the connection holes 107 and 108 when the chip is transported in the atmosphere. The oxide film formed on the surface of the Al wiring is also removed. If the transfer from the FIB processing device to the connection device can be realized while maintaining the vacuum, the connection holes 107 and 108 may be formed after the sputter etching.

Next, in the sputter deposition chamber, the chip is subjected to the low resistance connection with the Al wirings 103 and 104 and the adhesion between the protective film 106 and the Mo wiring in FIG.
As shown in (2), the Cr thin film 10 is formed on the surface of the protective film 106.
9 is formed. The thickness of the Cr film 109 is generally 1 at the Al wiring surface at the bottom of the formed connection holes 107 and 109.
It is selected in the range of 00 to 500 angstrom. After this, the chip is transferred to the laser CVD chamber.

In the laser CVD chamber, as shown in FIG.
As shown in FIG. 3, Ar laser 111 is irradiated in the atmosphere of Mo (CO) ₆ gas 110, and the Mo inside the connecting holes 107 and 108 is
115 and 116 are deposited and embedded. Next, as shown in FIG. 5 (4), the embedded portions are similarly Mo wiring 11
Connect at 7. At this time, the Mo (CO) ₆ gas pressure is set to 0.1 Torr, for example. If all the required Mo wiring can be formed by this, as shown in FIG.
After exhausting the (CO) ₆ gas, laser light 1
By laser annealing for irradiating 11 with Mo wiring 117
To reduce the specific resistance of.

The chip on which the Mo wiring 117 is formed is transferred to the sputter etch chamber, and the Cr film 109 except under the Mo wiring 117 is removed as shown in FIG. 6B, and the correction is completed. However, when the correction scale is large and the number of Mo wirings is large, and when the Mo wirings cannot be crossed with each other, an interlayer insulating film is required at the crossing portion on the Mo wirings, and the next process is performed.

The chip is transferred to the TEOS supply chamber,
TEOS gas 120 inside with mini chamber
Contain. In this state, the chip is transferred to the laser CVD chamber and the Mo wiring 1 intersects as shown in FIG. 6 (3).
17 is irradiated with Ar laser light 111, and the SiO ₂ film 12 is irradiated.
1 is formed. After the required SiO ₂ film is formed, the chip is returned to the TEOS supply chamber, the contained TEOS gas 120 is exhausted, the mini chamber is removed, and the TEOS adsorbed on the chip surface in the sputter etch chamber is removed. , Remove by sputter etching.

Next, as shown in FIG. 6 (4), the film is transferred into the sputter deposition chamber, and Cr is again applied to the chip surface.
The film 122 is formed. After this, the chip is laser CVD
By being transferred into the chamber and irradiated with Ar laser 111 in an atmosphere of Mo (CO) ₆ gas 123, Mo wirings 124 of the second layer, that is, intersecting wirings are formed as shown in FIG. 7 (1).

After forming all the Mo wiring, Mo (CO)
_{The 6} gas 123 is exhausted, and as shown in FIG. 7B, the specific resistance of the Mo wiring 124 can be reduced by laser annealing by irradiating the Ar laser beam 111 again in a vacuum. When all the processes are completed, the chip is transferred into the sputter etching chamber and, as shown in FIG.
Is removed by etching, the chip is taken out from the load lock chamber, and the wiring correction is completed. If low resistance wiring is not required, Mo of the first and second layers
Laser annealing after forming wiring, that is, Mo (CO) ₆
It is possible to omit the process of irradiating the wiring with laser again in the vacuum after exhausting the. By the process described above, since the inside of the laser CVD chamber is not exposed to TEOS, the formation rate of Mo wiring is kept constant, and by forming the laser under constant laser conditions, a constant width and a constant thickness can be obtained. Wiring can be formed. Moreover, the number of Mo wires is not limited, and even if the repair scale becomes large, on-chip wire repair is possible.

In the above description, the case where Mo (CO) ₆ is used as the material gas for forming the metal film and TEOS is used as the material gas for forming the insulating film has been described. However, the present invention is not limited to this, and Mo (C) is used as a material gas for forming the metal film.
Other than O) ₆ , metal carbonyls such as W (CO) ₆ , Ni (CO) ₄ , Fe (CO) ₅ , etc., alkyl metals such as trimethylaluminum, triisobutylaluminum, dimethylcadminium, etc., metal halides such as WF ₆ , MoF ₆ etc. In addition to TEOS as a material gas for forming an insulating film, TE is also used as a material gas for forming an insulating film from metal ketone complexes such as copper, dimethyl gold acetylacetonate, and copper bishexafluoroacetylacetonate.
It can be selected from a combination of OS and oxygen, monosilane and oxygen or nitric oxide, disilane and oxygen or nitric oxide, monosilane or disilane and ammonia, trimethylaluminum and oxygen, aluminum acetylacetonate and air (oxygen), and the like.

Further, although the case where the Ar laser is used as the laser has been described, the present invention is not limited to this, and various continuous oscillation and pulse oscillation lasers can be used. That is, an ultraviolet laser having energy capable of inducing decomposition of the material gas, such as ArF, KrF,
Excimer laser such as XeCl, third or fourth harmonic of YAG laser, second harmonic of Ar laser, nitrogen laser, or visible or infrared laser capable of heating above decomposition temperature of material gas, for example, fundamental wave of YAG laser. Or its second harmonic, the fundamental wave of iodine laser or its harmonics, dye laser excited by excimer laser such as ArF, KrF, XeCl, dye laser excited by nitrogen laser, copper vapor laser, or dimensionally A CO ₂ laser or the like can be used if allowed.

[0044]

According to the present invention, in laser CVD using a plurality of material gases, the material gases interfere with each other (influence each other) to deteriorate the film quality or change the film formation rate. The film quality and the formation rate are always constant. As a result, high-quality wiring can be corrected and the LSI development period can be shortened.

[Brief description of drawings]

FIG. 1 is a configuration diagram of a wiring forming apparatus that is an embodiment of the present invention.

FIG. 2 is a cross-sectional configuration diagram of a material gas supply unit of a wiring forming apparatus that is an embodiment of the present invention.

FIG. 3 is a chamber configuration diagram of a wiring forming apparatus which is another embodiment of the present invention.

FIG. 4 is a chamber configuration diagram of a wiring forming apparatus which is another embodiment of the present invention.

FIG. 5 is a diagram illustrating a wiring forming process by a wiring forming method according to an embodiment of the present invention.

FIG. 6 is a diagram illustrating a wiring forming process by a wiring forming method according to an embodiment of the present invention.

FIG. 7 is a diagram illustrating a wiring forming process by a wiring forming method according to an embodiment of the present invention.

[Explanation of symbols]

1 ... Laser CVD chamber 2 ... Load lock chamber 3 ... Material gas supply chamber 4 ... Gate valve 6 ... Sample holder 7 ... XYZ stage 8 ... Laser oscillator 9 ... Laser light 12,17 ... Vacuum pump 20 ... Objective lens 41 ... Mini chamber 101 ... Si substrate 103, 104 ... Al wiring 105, 106 ...
Insulating films 107, 108 ... Connection holes 110, 123 ...
Mo (CO) ₆ 120 ... TEOS

Front page continuation (72) Inventor Katsuro Mizukoshi 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa, Ltd.Production Technology Research Laboratory, Hitachi, Ltd. Production Engineering Laboratory (72) Inventor Susumu Komoritani 5-20-20, Kamimizuhoncho, Kodaira-shi, Tokyo Hitachi, Ltd. Musashi Plant

Claims (8)

[Claims] 1. A plurality of types of CVD material gas are sequentially introduced into a closed container, and a laser is focused and irradiated on the surface of a semiconductor device in the CVD material gas atmosphere to decompose the gas and deposit the material. In the method of sequentially forming the repair wiring and the insulating film, the semiconductor device is placed in another sealed container without introducing at least one of the CVD material gases into the sealed container. The CVD only in the separate closed container
Supplying and confining the material gas, focusing and irradiating the laser on the surface of the semiconductor device in another closed container, decomposing the CVD material gas without contaminating other parts of the device, and wiring. Alternatively, and / or an insulating film is formed. 2. The wiring forming method according to claim 1, wherein a CVD material gas for forming an insulating film is confined in the another closed container in which the sample is placed, and a laser is irradiated to insulate the material. A wiring forming method, which comprises forming a film. 3. The wiring forming method according to claim 2, wherein the CVD material gas for forming the insulating film is TEOS (tetraethyl orthosilicate) simple substance. 4. A mechanism for converging and irradiating a semiconductor device on which wiring is formed with a laser beam, and a CVD material gas atmosphere for forming a film of the material by being decomposed by the irradiation of the laser beam. In a wiring forming device having a chamber for controlling the load, a load lock chamber for loading and unloading the semiconductor device, and a mechanism for transporting the semiconductor device between the chambers, a sealable and laser permeable portion And a semiconductor device fixing holder on which a removable lid can be installed,
A chamber having a function of enclosing the CVD material gas is provided inside the holder lid, and at least one type of CVD material gas among a plurality of CVD material gases is irradiated with laser while being confined inside the holder lid, and The CVD material gas is irradiated with a laser while being filled in the CVD chamber,
A wiring forming device, which deposits the material. 5. A wiring holder according to claim 4, wherein a sample holder provided with a CVD material gas supply and / or exhaust valve is used as a holder for fixing a semiconductor device. A wiring forming device characterized by being. 6. The wiring forming apparatus according to claim 4 or 5, wherein the chamber having a function of enclosing a CVD material gas inside the holder lid is connected to another chamber through a gate valve. In addition, the wiring correction device is characterized in that the holder can be transferred between chambers while maintaining a vacuum. 7. The wiring forming apparatus according to claim 4, further comprising a chamber for etching the surface of the semiconductor device and a chamber for forming a buffer film on the surface of the semiconductor device, It is transferred to each chamber with the sample holder removed, and the surface of the semiconductor device is cleaned.
A wiring forming device characterized by being capable of forming a buffer film and removing an unnecessary buffer film. 8. A holder for mounting and fixing a sample, which has a mechanism for fixing the sample at a fixed position and a transparent portion for transmitting a laser beam and is detachable, and is attached to the periphery of the sample at the time of mounting. A sample holder for forming a wiring, comprising a lid capable of forming a sealed space and at least one hole having a mechanism capable of freely opening and closing the chamber, the hole penetrating to the outside.