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JPH0637080A - Supplying method for chemical - Google Patents

Supplying method for chemical

Info

Publication number
JPH0637080A
JPH0637080A JP18557892A JP18557892A JPH0637080A JP H0637080 A JPH0637080 A JP H0637080A JP 18557892 A JP18557892 A JP 18557892A JP 18557892 A JP18557892 A JP 18557892A JP H0637080 A JPH0637080 A JP H0637080A
Authority
JP
Japan
Prior art keywords
chemical
chemical solution
purity gas
purity
ultrapure water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP18557892A
Other languages
Japanese (ja)
Inventor
Naoki Sakamoto
直樹 坂元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyushu Fujitsu Electronics Ltd
Fujitsu Ltd
Original Assignee
Kyushu Fujitsu Electronics Ltd
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyushu Fujitsu Electronics Ltd, Fujitsu Ltd filed Critical Kyushu Fujitsu Electronics Ltd
Priority to JP18557892A priority Critical patent/JPH0637080A/en
Publication of JPH0637080A publication Critical patent/JPH0637080A/en
Withdrawn legal-status Critical Current

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  • Cleaning Or Drying Semiconductors (AREA)

Abstract

(57)【要約】 【目的】 本発明は,材料,特に薬液の供給システムに
関し,通常の,薬品自体を直接配管する通常の供給方法
を見直し,既存の高純度ガス供給システムを利用するこ
とにより,薬液中に含まれる不純物イオンの影響を取り
除き,高純度の薬液供給方法を得ることを目的とする。 【構成】 薬液材料となるガスシリンダ9の中の高純度
ガス1を高純度ガス供給ライン2により,超純水3を入
れた半導体基板用の薬液処理槽4にバブリングにより導
入して,所要の濃度に調整した高純度ガス1の水溶液か
らなる薬液5を調合するように,また,薬液5は, 超純
水3の中に濃度計, 或いはPHメータ6の測定プローブ
7を入れ,濃度計,或いはPHメータ6と連動して高純
度ガス供給ライン2の電磁弁8を開閉して,高純度ガス
1の超純水3に対するバブリング量を調整して, 所要濃
度の薬液5を得るように構成する。
(57) [Summary] [Object] The present invention relates to a supply system for materials, particularly a chemical liquid, by reviewing a normal supply method of directly piping a chemical itself and utilizing an existing high-purity gas supply system. The purpose is to obtain a high-purity chemical solution supply method by removing the influence of impurity ions contained in the chemical solution. [Structure] A high-purity gas 1 in a gas cylinder 9 serving as a chemical liquid material is introduced by bubbling through a high-purity gas supply line 2 into a chemical liquid treatment tank 4 for a semiconductor substrate containing ultrapure water 3 to obtain a required amount. The chemical solution 5 consisting of an aqueous solution of high-purity gas 1 whose concentration has been adjusted is prepared. In addition, the chemical solution 5 contains a densitometer or a measuring probe 7 of a PH meter 6 in ultrapure water 3, Alternatively, the solenoid valve 8 of the high-purity gas supply line 2 is opened and closed in conjunction with the PH meter 6 to adjust the bubbling amount of the high-purity gas 1 with respect to the ultrapure water 3 to obtain the chemical solution 5 of the required concentration. To do.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は,半導体基板の処理材
料,特に薬液の供給システムに関する。近年の半導体工
場における薬品供給では,配管による自動供給が行われ
ており,より集積度の高い半導体デバイスを製造するた
めには,クリーンで汚染の少ない,高純度の薬品の供給
が要求されている。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a system for supplying a semiconductor substrate processing material, especially a chemical solution. In the recent supply of chemicals in semiconductor factories, automatic supply by pipes is performed, and in order to manufacture semiconductor devices with higher integration, it is necessary to supply clean, highly polluted chemicals of high purity. .

【0002】そのため,薬品中に含まれる極微小なゴミ
等のパーティクルや不純物イオンを出来るだけ完全に除
去する必要がある。
Therefore, it is necessary to completely remove particles such as minute dust and the like and impurity ions contained in the chemical as much as possible.

【0003】[0003]

【従来の技術】図4は従来例の説明図である。図におい
て,32は薬液タンク, 33は圧気ガス送入口, 34は薬液供
給配管, 35は薬液弁, 36は薬液処理槽, 37はエッチング
ステーション, 38はドラフト, 39は半導体基板, 40は基
板ホルダである。
2. Description of the Related Art FIG. 4 is an explanatory view of a conventional example. In the figure, 32 is a chemical solution tank, 33 is a compressed gas inlet, 34 is a chemical solution supply pipe, 35 is a chemical solution valve, 36 is a chemical solution treatment tank, 37 is an etching station, 38 is a draft, 39 is a semiconductor substrate, 40 is a substrate holder. Is.

【0004】従来の電子工業用高純度薬品は,パーティ
クル,不純物イオン,薬品濃度等の納入仕様を満たして
いるものだけを,薬品供給メーカーから受入れ,使用し
ていた。
As the conventional high-purity chemicals for the electronic industry, only those which satisfy the delivery specifications of particles, impurity ions, chemical concentrations, etc. have been accepted and used from the chemical supplier.

【0005】ところが,薬品自体,或いは調合した薬液
を薬液タンクに貯蔵し,圧気方式により,薬液供給ライ
ンを通してユーザーポイントである複数のドラフト,或
いはエッチングステーションの中の半導体基板の薬液処
理槽に供給している。
However, the chemical itself or the prepared chemical solution is stored in a chemical solution tank and is supplied to a plurality of drafts which are user points or a chemical solution processing tank of a semiconductor substrate in an etching station through a chemical solution supply line by a pressure system. ing.

【0006】薬液供給ライン,主として,酸,アルカリ
類はテフロン製,有機溶剤類はステンレス製の配管を使
用しているが,薬液の供給中に配管自体や,配管継手等
から発塵や,不純物イオンの薬品への混入等が起こり,
実際のユースポイントでは,高純度の薬品としては,か
なり汚染された薬液が供給されることとなる。
The chemical liquid supply line, mainly Teflon pipes for acids and alkalis, and stainless steel pipes for organic solvents are used, but dust and impurities are generated from the pipes themselves and pipe joints during the supply of the chemical liquids. Ions are mixed with chemicals,
At the actual point of use, a highly contaminated chemical liquid will be supplied as a high-purity chemical.

【0007】パーティクルの減少対策としては,数段に
設けたフィルターを通過させることにより,パーティク
ルの除去を行っているが,薬液中の不純物イオンの除去
は,有効なイオン交換膜が存在せず,完全な除去技術の
開発には到達していないので,現実的には,不純物イオ
ンを完全に除去することは大変に困難であった。
As a measure for reducing particles, particles are removed by passing through filters provided in several stages. However, impurity ions in the chemical solution are removed because an effective ion exchange membrane does not exist. Since the development of perfect removal technology has not been reached, it has been extremely difficult to completely remove impurity ions in reality.

【0008】[0008]

【発明が解決しようとする課題】従って,ユースポイン
トにおける薬液中の不純物イオンの除去が完全には出来
ず,半導体デバイスの製造において,品質的に大きな影
響を与えるといった問題があった。
Therefore, there is a problem that the impurity ions in the chemical solution cannot be completely removed at the point of use, and the quality of the semiconductor device is greatly affected in the manufacture of the semiconductor device.

【0009】本発明は,以上の点を鑑み,通常の,薬品
自体を直接配管する通常の供給方法を見直し,既存の高
純度ガス供給システムを利用することにより,薬液中に
含まれる不純物イオンの影響を取り除き,高純度の薬液
供給方法を得ることを目的として提供される。
In view of the above points, the present invention has reviewed the normal supply method of directly piping the chemical itself and utilizes the existing high-purity gas supply system to remove the impurity ions contained in the chemical solution. It is provided for the purpose of removing the influence and obtaining a high-purity chemical solution supply method.

【0010】[0010]

【課題を解決するための手段】図1は本発明の原理説明
図である。図1において,1は高純度ガス,2は高純度
ガス供給ライン,3は超純水,4は薬液処理槽,5は薬
液,6は濃度計,或いはPHメータ,7は測定プロー
ブ,8は電磁弁,9はガスシリンダ,10は純水バルブで
ある。
FIG. 1 is a diagram for explaining the principle of the present invention. In FIG. 1, 1 is a high-purity gas, 2 is a high-purity gas supply line, 3 is ultrapure water, 4 is a chemical solution treatment tank, 5 is a chemical solution, 6 is a concentration meter or PH meter, 7 is a measurement probe, and 8 is An electromagnetic valve, 9 is a gas cylinder, and 10 is a pure water valve.

【0011】上記の問題点は,薬品材料源に高純度ガス
を用い,高純度ガス供給ラインを通してユースポイント
にあるドラフトやウエットステーション内の薬液処理槽
に配給し,薬液処理槽中の超純水中に高純度ガスをバブ
リングし,高純度ガス供給ラインの電磁弁を,あらかじ
め,薬液処理槽内に設けた濃度計やPHメーターの測定
プローブの測定値と連動して,半導体基板の処理に必要
な濃度に調整した薬液に調合する薬液供給方法を採用す
ることにより解決される。
The above-mentioned problems are caused by using a high-purity gas as a chemical material source and delivering it to a chemical treatment tank in a draft or a wet station at a use point through a high-purity gas supply line to obtain ultrapure water in the chemical treatment tank. High-purity gas is bubbled inside, and the solenoid valve of the high-purity gas supply line is required for semiconductor substrate processing in conjunction with the measurement value of the concentration probe or PH meter measurement probe installed in advance in the chemical treatment tank. This can be solved by adopting a chemical solution supply method of preparing a chemical solution adjusted to a different concentration.

【0012】すなわち,本発明の目的は,図1に示すよ
うに,薬液材料となるガスシリンダ9の中の高純度ガス
1を高純度ガス供給ライン2により,超純水3を入れた
半導体基板用の薬液処理槽4にバブリングにより導入し
て,所要の濃度に調整した高純度ガス1の水溶液からな
る薬液5を調合することにより,また,薬液5は, 超純
水3の中に濃度計, 或いはPHメータ6の測定プローブ
7を入れ,濃度計,或いはPHメータ6と連動して高純
度ガス供給ライン2の電磁弁8を開閉して,高純度ガス
1の超純水3に対するバブリング量を調整して,所要濃
度の薬液5を得ることにより達成される。
That is, as shown in FIG. 1, the object of the present invention is to provide a semiconductor substrate in which ultrapure water 3 in which a high purity gas 1 in a gas cylinder 9 which is a chemical liquid material is supplied through a high purity gas supply line 2 is introduced. The chemical solution 5 is introduced into the chemical solution treatment tank 4 for use by bubbling, and the chemical solution 5 composed of an aqueous solution of the high-purity gas 1 adjusted to the required concentration is prepared. Alternatively, the measuring probe 7 of the PH meter 6 is inserted, and the solenoid valve 8 of the high-purity gas supply line 2 is opened / closed in conjunction with the concentration meter or the PH meter 6, and the bubbling amount of the high-purity gas 1 with respect to the ultrapure water 3 is bubbled. Is adjusted to obtain the chemical solution 5 having a required concentration.

【0013】[0013]

【作用】本発明においては,高純度ガスを薬液処理槽中
で超純水中にバブリングすることにより,汚染の少な
い,高純度の薬液が得られる。薬液の濃度は,薬液処理
槽に設置した濃度計,或いはPHメータと連動した開閉
バルブを用いて,薬液の濃度調整を行う。
In the present invention, by bubbling high-purity gas into ultrapure water in a chemical treatment tank, a high-purity chemical with less contamination can be obtained. The concentration of the chemical liquid is adjusted by using a concentration meter installed in the chemical liquid treatment tank or an opening / closing valve linked with a PH meter.

【0014】[0014]

【実施例】図2は本発明の一実施例の説明図である。図
において,11は塩化水素ガス,12は高純度ガス供給ライ
ン,13は超純水,14は薬液処理槽,15は塩化水素酸,16
は濃度計,17は測定プローブ,18は電磁弁,19はガスシ
リンダ,20はシリンダキャビネット, 21はエッチングス
テーション,22はドラフト, 23は薬液圧送ポンプ, 24は
薬液処理槽, 25は薬液バルブ, 26は過酸化水素ガス, 27
はガスシリンダ, 28は高純度ガス供給システム, 29は電
磁弁,30は濃度計, 31は測定プローブ,41は硫酸, 42は
薬液タンクである。
DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 2 is an explanatory view of an embodiment of the present invention. In the figure, 11 is hydrogen chloride gas, 12 is a high purity gas supply line, 13 is ultrapure water, 14 is a chemical treatment tank, 15 is hydrochloric acid, 16
Is a concentration meter, 17 is a measuring probe, 18 is a solenoid valve, 19 is a gas cylinder, 20 is a cylinder cabinet, 21 is an etching station, 22 is a draft, 23 is a chemical pressure pump, 24 is a chemical treatment tank, 25 is a chemical valve, 26 is hydrogen peroxide gas, 27
Is a gas cylinder, 28 is a high-purity gas supply system, 29 is a solenoid valve, 30 is a concentration meter, 31 is a measuring probe, 41 is sulfuric acid, and 42 is a chemical liquid tank.

【0015】図2に示すように,本発明の第1の実施例
では,高純度ガスの供給源であるガスシリンダ19より,
既存の高純度ガス供給ライン12を通して,塩化水素ガス
11を半導体工場内の半導体基板のウエット処理を行うド
ラフト22,或いはウエットステーション21に供給する。
As shown in FIG. 2, in the first embodiment of the present invention, from the gas cylinder 19 which is the supply source of high purity gas,
Hydrogen chloride gas through the existing high-purity gas supply line 12
11 is supplied to the draft station 22 or the wet station 21 which performs the wet processing of the semiconductor substrate in the semiconductor factory.

【0016】薬液処理槽14の中には超純水13が満たさ
れ,その中に塩化水素ガス11をバブリングさせて,半導
体基板の処理に必要な10%濃度の塩化水素酸15に調合す
る。塩化水素酸15の濃度の調整は,薬液処理槽14に組み
込まれた濃度計16の測定プローブ17と連動している電磁
弁18を開閉して, 塩化水素酸11の濃度を10%に保つよう
にする。
The chemical solution treatment tank 14 is filled with ultrapure water 13, and hydrogen chloride gas 11 is bubbled into the chemical solution treatment tank 14 to prepare 10% concentration of hydrochloric acid 15 required for processing semiconductor substrates. To adjust the concentration of hydrochloric acid 15, the concentration of hydrochloric acid 11 should be kept at 10% by opening and closing the solenoid valve 18 that works in conjunction with the measuring probe 17 of the concentration meter 16 incorporated in the chemical treatment tank 14. To

【0017】上記実施例では,超純水13で満たされた薬
液処理槽14内に単独で塩化水素ガス11をバブリングして
いるが,薬品のPHを調整したり,混酸等を調合する場
合には,すでに調合した薬液の入っている薬液処理槽14
に, 直接混合する薬液の材料である高純度ガスをバブリ
ングしても良い。
In the above embodiment, the hydrogen chloride gas 11 is bubbled by itself in the chemical treatment tank 14 filled with the ultrapure water 13. However, when the pH of the chemical is adjusted or mixed acid is mixed, Is the chemical treatment tank containing the chemicals already prepared.
Alternatively, a high-purity gas, which is a material of the chemical liquid to be directly mixed, may be bubbled.

【0018】本発明の第2の実施例の薬液供給システム
を図3に示す。90%濃度の硫酸41を薬液タンク42からテ
フロン製の薬液圧送ポンプ23で薬液処理槽24に入れる。
過酸化水素ガス26を,ガスシリンダ27より高純度ガス供
給システム28を通して,薬液処理槽24にバブリングし
て,75%の過硫酸溶液に調合する。濃度調整は,第1の
実施例と同様にして行う。
A chemical liquid supply system according to the second embodiment of the present invention is shown in FIG. Sulfuric acid 41 of 90% concentration is introduced from the chemical solution tank 42 into the chemical solution treatment tank 24 by the chemical solution pressure pump 23 made of Teflon.
Hydrogen peroxide gas 26 is bubbled from a gas cylinder 27 through a high-purity gas supply system 28 into a chemical treatment tank 24 to prepare a 75% persulfuric acid solution. The density adjustment is performed in the same manner as in the first embodiment.

【0019】[0019]

【発明の効果】以上説明したように,本発明によれば,
パーティクル,不純物イオンの低減が達成されるととも
に,薬品の削減に伴う,半導体基礎材料の安定供給が可
能となり,半導体デバイスの品質向上に寄与するところ
が大きい。
As described above, according to the present invention,
In addition to the reduction of particles and impurity ions, the stable supply of basic semiconductor materials becomes possible with the reduction of chemicals, which greatly contributes to the quality improvement of semiconductor devices.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明の原理説明図FIG. 1 is an explanatory view of the principle of the present invention.

【図2】 本発明の第1の実施例の説明図FIG. 2 is an explanatory diagram of a first embodiment of the present invention.

【図3】 本発明の第2の実施例の説明図FIG. 3 is an explanatory diagram of a second embodiment of the present invention.

【図4】 従来例の説明図FIG. 4 is an explanatory diagram of a conventional example.

【符号の説明】[Explanation of symbols]

1 高純度ガス 2 高純度ガス供給ライン 3 超純水 4 薬液処理槽 5 薬液 6 濃度計,或いはPHメータ 7 測定プローブ 8 電磁弁 9 ガスシリンダ 10 純水バルブ 11 塩化水素ガス 12 高純度ガス供給ライン 13 超純水 14 薬液処理槽 15 塩化水素酸 16 濃度計 17 測定プローブ 18 電磁弁 19 ガスシリンダ 20 シリンダキャビネット 21 エッチングステーション 22 ドラフト 23 薬液圧送ポンプ 24 薬液処理槽 25 薬液バルブ 26 過酸化水素ガス 27 ガスシリンダ 28 高純度ガス供給システム 29 電磁弁 30 濃度計 31 測定プローブ 41 硫酸 42 薬液タンク 1 High-purity gas 2 High-purity gas supply line 3 Ultrapure water 4 Chemical solution treatment tank 5 Chemical solution 6 Concentration meter or PH meter 7 Measuring probe 8 Solenoid valve 9 Gas cylinder 10 Pure water valve 11 Hydrogen chloride gas 12 High-purity gas supply line 13 Ultra pure water 14 Chemical solution treatment tank 15 Hydrochloric acid 16 Concentration meter 17 Measuring probe 18 Solenoid valve 19 Gas cylinder 20 Cylinder cabinet 21 Etching station 22 Draft 23 Chemical solution pressure pump 24 Chemical solution treatment tank 25 Chemical solution valve 26 Hydrogen peroxide gas 27 Gas Cylinder 28 High-purity gas supply system 29 Solenoid valve 30 Concentration meter 31 Measuring probe 41 Sulfuric acid 42 Chemical solution tank

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 高純度ガス(1) を高純度ガス供給ライン
(2) により,超純水(3) を入れた半導体基板の薬液処理
槽(4) にバブリングにより導入して,所要の濃度に調整
した該高純度ガス(1) の水溶液からなる薬液(5) を調合
することを特徴とする薬液供給方法。
1. A high-purity gas supply line for supplying a high-purity gas (1)
(2) was introduced into the chemical treatment tank (4) of the semiconductor substrate containing ultrapure water (3) by bubbling, and the chemical solution (5) consisting of an aqueous solution of the high-purity gas (1) adjusted to the required concentration ) Is mixed, and the chemical solution supply method characterized by the above-mentioned.
【請求項2】 前記薬液(5) は, 前記超純水(3) 中に濃
度計, 或いはPHメータ(6) の測定プローブ(7) を入
れ,前記濃度計,或いはPHメータと連動して前記高純
度ガス供給ライン(2) の電磁弁(8) を開閉して,前記高
純度ガス(1) の前記超純水(3) に対するバブリング量を
調整して, 所要濃度の前記薬液(5) を得ることを特徴と
する請求項1記載の薬液供給方法。
2. The chemical liquid (5) is provided with a concentration meter or a measuring probe (7) of a PH meter (6) in the ultrapure water (3), and is linked with the concentration meter or PH meter. The solenoid valve (8) of the high-purity gas supply line (2) is opened and closed to adjust the bubbling amount of the high-purity gas (1) with respect to the ultrapure water (3) so that the chemical solution (5 ) Is obtained, the chemical solution supply method according to claim 1.
JP18557892A 1992-07-14 1992-07-14 Supplying method for chemical Withdrawn JPH0637080A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18557892A JPH0637080A (en) 1992-07-14 1992-07-14 Supplying method for chemical

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18557892A JPH0637080A (en) 1992-07-14 1992-07-14 Supplying method for chemical

Publications (1)

Publication Number Publication Date
JPH0637080A true JPH0637080A (en) 1994-02-10

Family

ID=16173267

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18557892A Withdrawn JPH0637080A (en) 1992-07-14 1992-07-14 Supplying method for chemical

Country Status (1)

Country Link
JP (1) JPH0637080A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7144552B1 (en) 1999-12-24 2006-12-05 Fujitsu Limited Method and apparatus for preparing chemical solutions
US7183117B2 (en) * 2001-12-20 2007-02-27 Fujitsu Limited Apparatus for measuring characteristics of chemical solution, chemical solution supply apparatus, and method for measuring concentration of chemical solution

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7144552B1 (en) 1999-12-24 2006-12-05 Fujitsu Limited Method and apparatus for preparing chemical solutions
US7183117B2 (en) * 2001-12-20 2007-02-27 Fujitsu Limited Apparatus for measuring characteristics of chemical solution, chemical solution supply apparatus, and method for measuring concentration of chemical solution

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