JPH0633216B2 - Infrared focused heating single crystal manufacturing equipment - Google Patents
Infrared focused heating single crystal manufacturing equipmentInfo
- Publication number
- JPH0633216B2 JPH0633216B2 JP537685A JP537685A JPH0633216B2 JP H0633216 B2 JPH0633216 B2 JP H0633216B2 JP 537685 A JP537685 A JP 537685A JP 537685 A JP537685 A JP 537685A JP H0633216 B2 JPH0633216 B2 JP H0633216B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- infrared
- mirror
- manufacturing equipment
- heating single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
- C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、赤外線集光加熱単結晶製造装置（以下ＦＺ装
置と略記）に関し、特に結晶育成を、自動的に行なうＦ
Ｚ装置に関する。TECHNICAL FIELD The present invention relates to an infrared converging heating single crystal manufacturing apparatus (hereinafter abbreviated as FZ apparatus), and in particular, F for automatically growing crystals.
Z device.
従来のＦＺ装置（実公昭５１−２２８９４）では、回転
楕円面鏡の一部に設けられた孔からの画像をスクリーン
上で観察するのみであり、結晶育成を行なうためには、
常時スクリーン上の画像を監視し、ランプパワーあるい
はギヤツプ調整を、手動で行なわなければならなかつ
た。In the conventional FZ device (Jitsuko Sho 51-22894), only an image from a hole provided in a part of the spheroidal mirror is observed on the screen, and in order to grow a crystal,
It was necessary to constantly monitor the image on the screen and manually adjust the lamp power or gear adjustment.
ＦＺ装置による結晶合成の自動制御はほとんど行なわれ
ておらず、わずかに当社の出願（特願昭５８−１８１２
１４）にあるのみであつた。Almost no automatic control of crystal synthesis by the FZ apparatus is performed, and a slight application by the Company (Japanese Patent Application No. 58-1812).
14).
しかし前述の従来技術では、光学センサに溶融帯の像を
結像させるためＳＮ比はそれほど問題にならないのであ
るが、テレビカメラに像を結像し画像処理するためには
ＳＮ比を良くしなければならないという問題点を有す
る。そこで本発明はこのような問題点を解決するもの
で、その目的とするところは、溶融帯の発光以外の迷光
を除去するために、無反射板を設けたＦＺ装置を提供す
るところにある。However, in the above-described conventional technique, the SN ratio is not so serious because the image of the melting zone is formed on the optical sensor, but the SN ratio must be improved in order to form the image on the television camera and perform the image processing. It has the problem that it must be done. Therefore, the present invention solves such a problem, and an object of the present invention is to provide an FZ apparatus provided with a non-reflecting plate in order to remove stray light other than light emission in the melting zone.
本発明の赤外線集光加熱単結晶製造装置は、回転楕円面
鏡の一部に設けた孔から、レンズ、プリズム、ハーフミ
ラー、反射鏡等の光学系を経て、テレビカメラに相対向
する原料棒と種結晶との間の溶融帯の像を結像し、コン
ピューターによって画像処理を行ない、前記溶融帯の直
径、高さ、外形形状を、ランプパワーあるいは、前記溶
融帯の高さにフィードバックして自動制御を行なう赤外
線集光加熱単結晶製造装置において、前記赤外線集光加
熱単結晶製造装置に用いる回転楕円面鏡の一部に設けた
孔と対向する他の面に、円錐形の黒色無反射板を設ける
ことを特徴とする。The infrared condensing heating single crystal manufacturing apparatus of the present invention is a raw material rod facing a television camera through an optical system such as a lens, a prism, a half mirror, and a reflecting mirror from a hole provided in a part of a spheroidal mirror. The image of the melting zone between the seed crystal and the seed crystal is formed, and image processing is performed by a computer, and the diameter, height, and outer shape of the melting zone are fed back to the lamp power or the height of the melting zone. In an infrared condensing heating single crystal manufacturing apparatus that performs automatic control, a conical black non-reflective surface is provided on the other surface facing the hole provided in a part of the spheroidal mirror used in the infrared converging heating single crystal manufacturing apparatus. It is characterized in that a plate is provided.
本発明の上記の構成によれば、ハロゲンランプから発せ
られた赤外線を回転楕円面鏡で反射し、溶融帯に照射さ
れる光のうちで、回転楕円面鏡の一部に設けられた孔に
向う方向の光のみを吸収するか、あるいは、孔の方向と
は別な方向に反射させることで、溶融帯から発せられる
光以外の迷光を除去しようというものである。According to the above configuration of the present invention, the infrared rays emitted from the halogen lamp are reflected by the spheroidal mirror, and among the light radiated to the melting zone, a hole provided in a part of the spheroidal mirror is used. It is intended to eliminate stray light other than the light emitted from the melting zone by absorbing only the light in the opposite direction or by reflecting it in a direction different from the direction of the holes.
第１図は、本発明の実施例における無反射板の平面図で
あつて、回転楕円面鏡に設けられた孔と対称な回転楕円
面鏡部に取りつける。第２図に無反射板を取りつけたＦ
Ｚ装置の回転楕円面鏡部を示した。１は黒染めを行つた
無反射板、２は回転楕円面鏡と無反射板の間に取りつけ
る台、３は回転楕円面鏡である。第３図、第４図にＦＺ
装置の正面図、断面図を示す。ここで、１，２，３は第
２図と同様であり、４は原料棒、５は溶融帯、６は種結
晶、７は下部シヤフト、８は上部シヤフト、９は石英
管、１０はレンズ（含プリズム）、１１はハロゲンラン
プ、１２はガス導入口、１３はガス排気口である。FIG. 1 is a plan view of a non-reflecting plate according to an embodiment of the present invention, which is attached to a spheroidal mirror portion symmetrical to a hole provided in the spheroidal mirror. F with non-reflective plate attached to Fig. 2
The spheroidal mirror section of the Z device is shown. Reference numeral 1 is a non-reflective plate that is blackened, 2 is a base mounted between the spheroidal mirror and the non-reflective plate, and 3 is a spheroidal mirror. FZ in FIGS. 3 and 4
The front view and sectional drawing of an apparatus are shown. Here, 1, 2 and 3 are the same as those in FIG. 2, 4 is a raw material rod, 5 is a melting zone, 6 is a seed crystal, 7 is a lower shaft, 8 is an upper shaft, 9 is a quartz tube, and 10 is a lens. (Including prism), 11 is a halogen lamp, 12 is a gas inlet, and 13 is a gas outlet.
上部シヤフト８に原料棒４をセツトし、下部シヤフト７
に種結晶６をセツトする。ハロゲンランプ１１にパワー
を投入し、回転楕円面鏡３により該ハロゲンランプの光
を石英管９の中央部に集光する。この時、ガス導入口１
２から雰囲気ガスを導入し、ガス排出口１３から雰囲気
ガスを排出する。集光部において、原料棒４の先端と種
結晶６の先端とを溶融接触させて、溶融帯５を形成す
る。この時、上部シヤフト８及び下部シヤフト７を同方
向ないし逆方向に回転させ、上下のシヤフトが同時に下
方へ移動する。The raw material rod 4 is set in the upper shaft 8 and the lower shaft 7
Seed crystal 6 is set in. Power is applied to the halogen lamp 11, and the light from the halogen lamp is focused on the central portion of the quartz tube 9 by the spheroidal mirror 3. At this time, gas inlet 1
Atmospheric gas is introduced from 2 and the atmospheric gas is discharged from the gas discharge port 13. In the light condensing part, the tip of the raw material rod 4 and the tip of the seed crystal 6 are melted and brought into contact with each other to form the molten zone 5. At this time, the upper and lower shafts 8 and 7 are rotated in the same direction or in opposite directions, and the upper and lower shafts simultaneously move downward.
該集光部の状況をレンズ１０（含プリズム）及び反射鏡
を経て、スクリーン上に投映し、常時、該投映像を監視
しつつ、ランプパワーあるいは原料棒と種結晶の間隔
（ギヤツプ）を調節しながら、結晶育成を行なう。本実
施例においては、ハーフミラーを用い、該集光部の状況
をテレビカメラ上にも結像させ、画像処理を行い、ラン
プパワーあるいは、溶融帯の高さにフイードバツクし自
動制御を行つた。The condition of the condensing part is projected on the screen through the lens 10 (including prism) and the reflecting mirror, and the lamp power or the interval (gear gap) between the raw material rod and the seed crystal is adjusted while constantly monitoring the projected image. While growing the crystal. In the present embodiment, a half mirror is used, the state of the light condensing portion is also imaged on a television camera, image processing is performed, and the lamp power or the height of the melting zone is fed back to perform automatic control.
以上述べたように本発明によれば、結晶の育成状況を観
察しつつ、自動制御を可能にするものであり、特にテレ
ビカメラに画像を結像させ画像処理を行う際に、円錐形
の黒染めを行つた無反射板を設けることにより、例えば
平板形状の無反射板を設けた時よりも、さらに２０〜３
０％の迷光を除去することができ、コントラストを大幅
に向上させることにより画像処理を可能にし、それによ
つて結晶育成の自動制御を行うことができるという効果
を有する。As described above, according to the present invention, it is possible to automatically control while observing the growth state of crystals, and in particular, when an image is formed on a television camera and image processing is performed, a conical black shape is used. By providing the dyed non-reflective plate, for example, it is 20 to 3 more than when the flat anti-reflective plate is provided.
There is an effect that 0% of stray light can be removed, and image processing can be performed by significantly improving the contrast, whereby automatic control of crystal growth can be performed.
第１図は本発明における無反射板の平面図を示す。 第２図は本発明における無反射板をＦＺ装置の回転楕円
面鏡部に取りつける様子を示す図。 第３図はＦＺ装置の平面図を示す。 第４図は円錐形の黒染めを行つた無反射板を取りつけ
た、ＦＺ装置の断面図を示す。FIG. 1 shows a plan view of a non-reflection plate in the present invention. FIG. 2 is a view showing how the non-reflection plate of the present invention is attached to the spheroidal mirror part of the FZ device. FIG. 3 shows a plan view of the FZ apparatus. FIG. 4 shows a cross-sectional view of an FZ apparatus in which a non-reflecting plate having a black conical shape is attached.
Claims (1)
ズ、プリズム、ハーフミラー、反射鏡等の光学系を経
て、テレビカメラに相対向する原料棒と種結晶との間の
溶融帯の像を結像し、コンピューターによって画像処理
を行ない、前記溶融帯の直径、高さ、外形形状を、ラン
プパワーあるいは、前記溶融帯の高さにフィードバック
して自動制御を行なう赤外線集光加熱単結晶製造装置に
おいて、前記赤外線集光加熱単結晶製造装置に用いる回
転楕円面鏡の一部に設けた孔と対向する他の面に、円錐
形の黒色無反射板を設けることを特徴とする赤外線集光
加熱単結晶製造装置。1. Melting between a raw material rod and a seed crystal facing a TV camera through an optical system such as a lens, a prism, a half mirror, and a reflecting mirror through a hole provided in a part of a spheroidal mirror. Infrared focused heating that forms an image of the band and performs image processing by a computer, and feeds back the diameter, height, and outer shape of the melting zone to the lamp power or the height of the melting zone for automatic control. In the single crystal production apparatus, a conical black non-reflecting plate is provided on the other surface facing the hole provided in a part of the spheroidal mirror used in the infrared condensing heating single crystal production apparatus. Infrared focused heating single crystal manufacturing equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP537685A JPH0633216B2 (en) | 1985-01-16 | 1985-01-16 | Infrared focused heating single crystal manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP537685A JPH0633216B2 (en) | 1985-01-16 | 1985-01-16 | Infrared focused heating single crystal manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61163185A JPS61163185A (en) | 1986-07-23 |
| JPH0633216B2 true JPH0633216B2 (en) | 1994-05-02 |
Family
ID=11609450
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP537685A Expired - Fee Related JPH0633216B2 (en) | 1985-01-16 | 1985-01-16 | Infrared focused heating single crystal manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0633216B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2614117B2 (en) * | 1989-10-06 | 1997-05-28 | ソニー・テクトロニクス 株式会社 | Optical attenuator |
| US6113290A (en) * | 1996-02-21 | 2000-09-05 | Canon Kabushiki Kaisha | Ink jet recording apparatus having improved edge detecting and edge formation |
-
1985
- 1985-01-16 JP JP537685A patent/JPH0633216B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61163185A (en) | 1986-07-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3780979A (en) | Adjustable fundus illumination | |
| EP0152181A3 (en) | Monitoring apparatus | |
| NO905075L (en) | PROCEDURE FOR PREPARING A PHARMACEUTICAL PREPARATION | |
| JPH0633216B2 (en) | Infrared focused heating single crystal manufacturing equipment | |
| KR970011337B1 (en) | Optical fiber coating control | |
| JPH0633217B2 (en) | Infrared focused heating single crystal manufacturing equipment | |
| JPS61209984A (en) | Device for preparing single crystal provided with convergent infrared ray heating means | |
| JPH0534317B2 (en) | ||
| JPS61242982A (en) | Converged infrared heating single crystal production apparatus | |
| MY102843A (en) | Apparatus for manufacturing semiconductor single crystals | |
| JPS6197185A (en) | Preparation of single crystal | |
| JPS60226489A (en) | Single crystal preparation apparatus heated by focused infrared radiation | |
| JPS60226484A (en) | Single crystal preparation apparatus heated by focused infrared radiation | |
| JPH02188707A (en) | Tip sphere working method for optical fiber | |
| JPS60221387A (en) | Manufacturing apparatus of single crystal by infrared heating | |
| JPS60221386A (en) | Manufacturing apparatus of single crystal by infrared-condensing heating | |
| JPS63284506A (en) | Production of single crystal fiber | |
| JPH057251U (en) | Intraoperative irradiation monitoring system for radiotherapy equipment | |
| JPS647328A (en) | Positioning and adjusting device for photodetector | |
| JPH0541598B2 (en) | ||
| RU1443488C (en) | Device for growing profiled crystals | |
| JPS6071589A (en) | Manufacture of single crystal | |
| JP2826176B2 (en) | Single crystal manufacturing equipment | |
| JPS60191093A (en) | Manufacture of single crystal | |
| JPS6437494A (en) | Single crystal producing apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |