JPH0613499A - Hybrid integrated circuit device - Google Patents
Hybrid integrated circuit deviceInfo
- Publication number
- JPH0613499A JPH0613499A JP4169181A JP16918192A JPH0613499A JP H0613499 A JPH0613499 A JP H0613499A JP 4169181 A JP4169181 A JP 4169181A JP 16918192 A JP16918192 A JP 16918192A JP H0613499 A JPH0613499 A JP H0613499A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- external lead
- silicon gel
- region
- circuit element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は混成集積回路装置に関
し、詳細には、シリコンゲル充填型の混成集積回路装置
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hybrid integrated circuit device, and more particularly to a silicon gel-filled hybrid integrated circuit device.
【0002】[0002]
【従来の技術】従来の混成集積回路装置は、図7に示す
ように、略箱形状のケース材(60)、外部リード(8
0)、集積回路素子(82)等を固着、搭載する第1の
絶縁金属基板(70)、主として、絶縁性向上のために
使用される第2の絶縁金属基板(90)から構成され
る。2. Description of the Related Art As shown in FIG. 7, a conventional hybrid integrated circuit device has a case member (60) having a substantially box shape and external leads (8).
0), a first insulating metal substrate (70) on which the integrated circuit element (82) and the like are fixed and mounted, and mainly a second insulating metal substrate (90) used for improving the insulating property.
【0003】ケース材(60)は第1の絶縁金属基板
(70)の周辺部に当接する壁体(62)を備える。外
部リードが導出される方向に形成される壁体(62)の
1つには、図7に示すように、シリコンゲル導入孔(6
4)が形成される。また、通常、ケース材(60)の長
手方向端部に段部が形成され、この段部に、混成集積回
路装置を図示しない放熱板に結合するネジのための孔が
形成される。このケース材(60)は、例えばファイバ
グラス・レインホースPET(FRPET)を射出成形
して得られる。The case member (60) has a wall body (62) which abuts the peripheral portion of the first insulating metal substrate (70). As shown in FIG. 7, the silicon gel introducing hole (6
4) is formed. Further, usually, a step portion is formed at an end portion in the longitudinal direction of the case member (60), and a hole for a screw for coupling the hybrid integrated circuit device to a heat sink (not shown) is formed in the step portion. The case material (60) is obtained by injection molding fiberglass rain hose PET (FRPET), for example.
【0004】第1および第2の絶縁金属基板(70)
(90)には放熱特性および加工性を考慮して略2mm
厚のアルミニウムが使用され、絶縁性の向上のためにそ
の表面が陽極酸化処理される。第1の絶縁金属基板(7
0)は矩形であり、混成集積回路装置が略完成した時点
で、数単位乃至十数単位の混成集積回路装置基板から単
位混成集積回路装置のサイズに分割プレスされる。ま
た、第2の絶縁金属基板(90)はケース材(60)と
略同一の平面形状であり、これを第1の絶縁金属基板
(70)に接着する接着層(92)が図示しない放熱板
と第1の絶縁金属基板(70)間の絶縁に寄与する。First and second insulating metal substrates (70)
(90) is approximately 2 mm considering heat dissipation characteristics and workability
Thick aluminum is used and its surface is anodized for improved insulation. First insulating metal substrate (7
Reference numeral 0) is a rectangle, and when the hybrid integrated circuit device is substantially completed, it is divided and pressed from several to ten or more units of the hybrid integrated circuit device substrate to the size of the unit hybrid integrated circuit device. Further, the second insulating metal substrate (90) has substantially the same planar shape as the case member (60), and the adhesive layer (92) for adhering the second insulating metal substrate (90) to the first insulating metal substrate (70) is not shown in the figure. And contributes to insulation between the first insulating metal substrate (70).
【0005】外部リード用パッド(74)、ダイボンド
パッド(76)、ワイアボンディングパッド(78)お
よび導電路(図示しない)は、ポリイミド樹脂等の接着
性を有する熱硬化性絶縁樹脂と略35μm厚の銅箔との
クラッド材を温度150℃〜170℃、1平方センチメ
ートル当り50〜100Kgの圧力で第1の絶縁金属基
板(70)にホットプレスした後、その銅箔をホトエッ
チングする等して所定パターンに形成される。なお、前
記熱硬化性絶縁樹脂はこのホットプレス工程で完全硬化
して略35μm厚の絶縁層(72)となる。The external lead pad (74), the die bond pad (76), the wire bonding pad (78) and the conductive path (not shown) are made of a thermosetting insulating resin having adhesiveness such as polyimide resin and have a thickness of about 35 μm. The clad material with the copper foil is hot-pressed onto the first insulating metal substrate (70) at a temperature of 150 ° C. to 170 ° C. and a pressure of 50 to 100 kg per square centimeter, and then the copper foil is photo-etched into a predetermined pattern. Is formed. The thermosetting insulating resin is completely cured in this hot pressing process to form an insulating layer (72) having a thickness of about 35 μm.
【0006】集積回路素子(82)等の半導体素子およ
びその他の回路素子にはチップ部品が使用され、集積回
路素子(82)は銀ペースト等により第1の絶縁金属基
板(70)のダイボンドパッド(76)に固着され、チ
ップコンデンサあるいはチップ抵抗、外部リード(8
0)等の異型部品は所定のパッドに半田固着される。こ
れら回路素子および部品は所定のパッド(74)(7
6)(78)上にスクリーン印刷したソルダーペースト
に一時的に付着させた後、リフローして完全固着され
る。この第1の絶縁金属基板(70)の周辺部は、エポ
キシ含浸ポリエステル不繊布を接着シートとして、ケー
ス材(60)の壁体(62)に加熱圧着(125℃、8
時間)され、搭載回路素子が封止される。Chip parts are used for semiconductor elements such as the integrated circuit element (82) and other circuit elements, and the integrated circuit element (82) is made of silver paste or the like to form a die bond pad () on the first insulating metal substrate (70). 76) fixed to the chip capacitor or chip resistor, external lead (8
Atypical parts such as 0) are soldered and fixed to predetermined pads. These circuit elements and parts are provided in predetermined pads (74) (7
6) After being temporarily attached to the solder paste screen-printed on (78), it is reflowed and completely fixed. The peripheral portion of the first insulating metal substrate (70) is heat-pressed (125 ° C., 8 ° C.) to the wall body (62) of the case material (60) using an epoxy impregnated polyester non-woven fabric as an adhesive sheet.
Time), and the mounted circuit element is sealed.
【0007】[0007]
【発明が解決しようとする課題】本発明は特に信頼性が
要求され、特殊なヒートサイクル試験が行われるシリコ
ンゲル充填型の混成集積回路装置に発生することがある
外部リード(80)のためのパッド(74)の剥離の原
因の解明の過程で成されたものである。即ち、発明者の
研究により、樹脂製のケース材(60)で封止した混成
集積回路装置をヒートサイクル試験すると、図7の矢印
で示すようにケース材(60)の端部が上方に湾曲する
ことが知られた。また、熱硬化性樹脂(96)と第1の
絶縁金属基板(70)との固着が完全である場合にはこ
の湾曲は僅少であることも知られた。SUMMARY OF THE INVENTION The present invention is for external leads (80) that are particularly reliable and may occur in silicon gel filled hybrid integrated circuit devices that are subject to special heat cycle tests. This was done in the process of elucidating the cause of the peeling of the pad (74). That is, as a result of the inventor's research, when a hybrid integrated circuit device sealed with a resin case material (60) is subjected to a heat cycle test, the end portion of the case material (60) bends upward as shown by the arrow in FIG. It was known to do. It was also known that this curvature is slight when the thermosetting resin (96) and the first insulating metal substrate (70) are completely fixed to each other.
【0008】そして、外部リード(80)固着領域に充
填されるエポキシ樹脂等の熱硬化性樹脂(96)とケー
ス材(60)との接着強度が極めて高いに対し、シリコ
ンゲル(94)と他の材料の接着強度が低いため、外部
リード(80)固着部にシリコンゲル(94)が付着す
る場合には、ケース材(60)の湾曲に応じて、熱硬化
性樹脂(96)および外部リード(80)が第1の絶縁
金属基板(70)から持ち上げられ、やがて、パッド
(74)の剥離に至ることが解明された。The adhesive strength between the case material (60) and the thermosetting resin (96) such as epoxy resin filled in the area where the outer leads (80) are fixed is extremely high, whereas the silicone gel (94) and others are very strong. When the silicon gel (94) adheres to the external lead (80) fixing part, the thermosetting resin (96) and the external lead are adhered to each other according to the curvature of the case material (60) because the adhesive strength of the material is low. It was elucidated that (80) was lifted from the first insulating metal substrate (70), and eventually the pad (74) was peeled off.
【0009】なお、外部リード(80)固着部にシリコ
ンゲル(94)が付着する理由は、従来の混成集積回路
装置では、ゾル状態のシリコンを外部リード(80)の
固着部から注入するため、注入パイプの外壁を濡らすシ
リコンゾルが外部リード(80)固着部に付着するため
である。また、注入するシリコンゾルの流動性が高いた
め、図7に示すように、外部リード(80)のための電
極パターンを浸透して、外部リード(80)固着部をシ
リコンゾルで濡らすためであり、さらにまた、シリコン
ゾルを高圧注入する場合に飛散するシリコンゾルが外部
リード(80)固着部に付着するためである。The reason why the silicon gel (94) adheres to the fixed portion of the external lead (80) is that in the conventional hybrid integrated circuit device, sol-state silicon is injected from the fixed portion of the external lead (80). This is because the silicon sol that wets the outer wall of the injection pipe adheres to the fixed portion of the outer lead (80). Further, since the injected silicon sol has a high fluidity, as shown in FIG. 7, the electrode pattern for the external lead (80) is permeated to wet the fixed part of the external lead (80) with the silicon sol. Furthermore, this is because the silicon sol that scatters when the silicon sol is injected at a high pressure adheres to the external lead (80) fixing portion.
【0010】また、従来構造の混成集積回路装置では一
対の外部リードが相対する面から導出されるため、外部
リード固着部の補強のための熱硬化性樹脂の充填、硬化
を同時に行うことが不可能であり製造工程が煩雑である
問題を有する。従って、本発明の第1の目的は過酷なヒ
ートサイクルが加えられる場合にも、パッドの剥離を生
じない高信頼のシリコンゲル充填型の混成集積回路装置
を提供することにあり、第2の目的は外部リード固着部
の補強のための熱硬化性樹脂の充填、硬化を同時に行う
ことが可能な混成集積回路装置を提供することにある。Further, in the conventional hybrid integrated circuit device, since the pair of external leads are led out from the opposite surfaces, it is not possible to simultaneously fill and cure the thermosetting resin for reinforcing the external lead fixing portion. It is possible and has a problem that the manufacturing process is complicated. Therefore, it is a first object of the present invention to provide a highly reliable silicon gel-filled hybrid integrated circuit device which does not cause the peeling of the pad even when a severe heat cycle is applied. Is to provide a hybrid integrated circuit device capable of simultaneously filling and curing a thermosetting resin for reinforcing the external lead fixing portion.
【0011】[0011]
【課題を解決するための手段】上述した課題を解決し、
目的を達成するため、この発明に係わる混成集積回路装
置は、絶縁金属基板に形成した回路パターン上に複数の
集積回路素子および外部リード端子を固着、搭載した集
積回路基板と、その集積回路基板に当接され、集積回路
素子搭載領域を囲み、且つ、外部リード端子固着領域と
の境界を分割する壁体とその壁体の外周部に形成され外
部リード端子固着領域を囲む外枠とを有する樹脂製のケ
ース材とを具備し、壁体は外枠よりも低く形成され、そ
の壁体によって囲まれた集積回路素子搭載領域内にシリ
コンゲルが充填され、外枠で囲まれた領域内の外部リー
ド端子固着領域およびシリコンゲル上に熱硬化性樹脂が
充填、積層されたことを特徴としている。[Means for Solving the Problems]
To achieve the object, a hybrid integrated circuit device according to the present invention is an integrated circuit board in which a plurality of integrated circuit elements and external lead terminals are fixedly mounted on a circuit pattern formed on an insulating metal substrate, and the integrated circuit board is provided with the integrated circuit board. A resin having a wall body that is in contact with and surrounds the integrated circuit element mounting area and that divides the boundary with the external lead terminal fixing area, and an outer frame formed on the outer periphery of the wall body and surrounding the external lead terminal fixing area. A case member made of metal, and the wall body is formed lower than the outer frame, and the integrated circuit element mounting region surrounded by the wall body is filled with silicon gel, and the outside of the region surrounded by the outer frame is formed. It is characterized in that a thermosetting resin is filled and laminated on the lead terminal fixing region and the silicon gel.
【0012】また、この発明に係わる混成集積回路装置
は、絶縁金属基板に形成した回路パターン上に複数の集
積回路素子および少なくとも相対する周端部に外部リー
ド端子を固着、搭載した集積回路基板と、その集積回路
基板に当接され、集積回路素子搭載領域を囲み、且つ、
外部リード端子固着領域との境界を分割する壁体とその
壁体の外周部に形成され外部リード端子固着領域を囲む
外枠とを有し、シリコンゲルと熱硬化性樹脂の充填のた
めの開口部を同一方向に設けられた樹脂製のケース材と
を具備し、壁体は外枠よりも低く形成され、その壁体に
よって囲まれた集積回路素子搭載領域内にシリコンゲル
が充填され、外枠で囲まれた領域内の外部リード端子固
着領域およびシリコンゲル上にエポキシ樹脂が充填、積
層されたことを特徴としている。Further, the hybrid integrated circuit device according to the present invention comprises: an integrated circuit board having a plurality of integrated circuit elements on a circuit pattern formed on an insulating metal substrate and external lead terminals fixed and mounted on at least opposite peripheral end portions; Abutting on the integrated circuit board, surrounding the integrated circuit element mounting area, and
An opening for filling the silicon gel and the thermosetting resin, which has a wall body that divides the boundary with the external lead terminal fixing area and an outer frame that is formed on the outer peripheral portion of the wall body and surrounds the external lead terminal fixing area. And a case body made of resin provided in the same direction, the wall body is formed lower than the outer frame, and the integrated circuit element mounting region surrounded by the wall body is filled with silicon gel, It is characterized in that an epoxy resin is filled and laminated on the external lead terminal fixing area and the silicon gel in the area surrounded by the frame.
【0013】[0013]
【作用】以上のように構成される混成集積回路装置にお
いては、ケース材に集積回路素子搭載領域と外部リード
固着領域を分割する壁体を成形することにより、シリコ
ンゾル注入パイプの外部リード固着領域への接近を回避
し、シリコンゾル注入パイプ外壁のシリコンゾルが外部
リード固着領域に付着する問題、飛散シリコンゾルが外
部リード固着領域に付着する問題を解決することができ
る。In the hybrid integrated circuit device configured as described above, the outer lead fixing region of the silicon sol injection pipe is formed by forming the wall body dividing the integrated circuit element mounting region and the outer lead fixing region in the case material. It is possible to avoid the problem that the silicon sol on the outer wall of the silicon sol injection pipe adheres to the external lead fixing area and the problem that the scattered silicon sol adheres to the external lead fixing area by avoiding the approach to.
【0014】また、ケース材に集積回路素子搭載領域と
外部リード固着領域を分割する壁体を形成し、シリコン
ゲルと熱硬化性樹脂の充填のための開口部を単一方向に
形成することにより、シリコンゾルの飛散等による外部
リード固着部の汚染の問題が解決されると共に、シリコ
ンゾル注入と熱硬化性樹脂の充填を単一治具上で行うこ
とが可能になる。By forming a wall body that divides the integrated circuit element mounting region and the external lead fixing region in the case material, and forming an opening for filling the silicon gel and the thermosetting resin in a single direction. It is possible to solve the problem of contamination of the external lead fixing portion due to scattering of the silicon sol, and it is possible to perform the injection of the silicon sol and the filling of the thermosetting resin on a single jig.
【0015】さらに、ケース材の壁体が外枠よりも低く
設定されるために外部リード固着領域およびシリコンゲ
ル上部に熱硬化性樹脂が充填され、外部リード固着領域
内に充填された熱硬化性樹脂の接着力で熱衝撃時に発生
するシリコンゲルの伸縮、膨張による熱硬化性樹脂の剥
離を防止することができる。Further, since the wall of the case material is set to be lower than the outer frame, a thermosetting resin is filled in the outer lead fixing region and the upper part of the silicon gel, and the thermosetting resin filled in the outer lead fixing region is filled. The adhesive force of the resin can prevent peeling of the thermosetting resin due to expansion and contraction and expansion of the silicon gel that occurs during thermal shock.
【0016】[0016]
【実施例】以下に、図1〜図6に示した実施例に基づい
て本発明を説明する。図1および図2を参照すると、デ
ュアルインライン・パッケージの混成集積回路装置を例
示する実施例は、外枠(12)内に一対の壁体(14)
を備え、この壁体(14)により絶縁金属基板(30)
上の領域を集積回路素子搭載領域(16)と外部リード
固着領域(18)とに分割するケース材(10)、集積
回路素子(46)等の半導体素子、外部リード(44)
等を固着、搭載する第1の絶縁金属基板(30)、主と
して絶縁性向上のために使用される第2の絶縁金属基板
(50)、集積回路素子搭載領域(16)に充填される
シリコンゲル(56)、このシリコンゲル(56)上部
および外部リード固着領域(18)に充填される熱硬化
性樹脂(58)からなる。EXAMPLES The present invention will be described below based on the examples shown in FIGS. Referring to FIGS. 1 and 2, an embodiment illustrating a dual in-line package hybrid integrated circuit device includes a pair of walls (14) within an outer frame (12).
The wall body (14) is provided with an insulating metal substrate (30)
A semiconductor material such as a case material (10), an integrated circuit element (46), which divides the upper area into an integrated circuit element mounting area (16) and an external lead fixing area (18), an external lead (44).
A first insulating metal substrate (30) for fixing and mounting etc., a second insulating metal substrate (50) mainly used for improving the insulating property, and a silicon gel filled in an integrated circuit element mounting region (16) (56), a thermosetting resin (58) filled in the upper portion of the silicon gel (56) and the external lead fixing area (18).
【0017】耐候性等の向上のために充填されるシリコ
ンゲル(56)は図示しないポンプ等により、ゾル状態
で一対の壁体(14)で形成された集積回路素子搭載領
域(16)の所定の深さまで注入され、注入後に熱処理
してゲル化される。本実施例によれば、その際、集積回
路素子搭載領域(16)の面積が大きい理由、および集
積回路素子搭載領域(16)と外部リード固着領域(1
8)間に分離のための壁体(14)が形成されている理
由のため、シリコンゾル注入パイプの外部リード固着領
域(18)への接近が回避され、シリコンゾル注入パイ
プ外壁のシリコンゾルが外部リード固着領域(18)に
付着する問題、飛散シリコンゾルが外部リード固着領域
(18)に付着する問題が生じない。The silicon gel (56) filled for improving the weather resistance is provided in a predetermined state in the integrated circuit element mounting region (16) formed by the pair of walls (14) in a sol state by a pump or the like not shown. To the depth of, and heat-treated after the injection to be gelled. According to the present embodiment, at this time, the area of the integrated circuit element mounting area (16) is large, and the integrated circuit element mounting area (16) and the external lead fixing area (1
Because of the wall (14) for separation formed between 8), access to the outer lead fixing region (18) of the silicon sol injection pipe is avoided, and the silicon sol on the outer wall of the silicon sol injection pipe is prevented. There is no problem of attaching to the external lead fixing area (18) or of attaching scattered silicon sol to the external lead fixing area (18).
【0018】そして、熱硬化性樹脂(58)を前記シリ
コンゲル(56)上部および一対の外部リード固着領域
(18)に充填し、熱処理して図1の構造が完成する。
図3〜図6を参照して本実施例をさらに詳細に説明す
る。ケース材(10)は図3に示す如く、略枠状に形成
される。このケース材は例えばファイバグラス・レイン
ホースPET(FRPET)等の絶縁樹脂材料を用いて
射出成形して形成される。Then, a thermosetting resin (58) is filled in the upper part of the silicon gel (56) and a pair of external lead fixing regions (18) and heat-treated to complete the structure of FIG.
The present embodiment will be described in more detail with reference to FIGS. The case material (10) is formed in a substantially frame shape as shown in FIG. This case material is formed by injection molding using an insulating resin material such as fiberglass rain hose PET (FRPET).
【0019】ケース材(10)は外部リード固着領域と
集積回路素子搭載領域とを分割するための壁体(14)
が設けられている。この壁体(14)は外部リード端子
固着パッドの近傍に配置されると共に、外枠(12)よ
りも低く設定されている。壁体(14)に囲まれた集積
回路素子搭載領域(16)には上述したように、シリコ
ンゲル(56)が充填されている。シリコンゲル(5
6)を被覆保護すべく外枠(12)に囲まれた外部リー
ド端子固着領域(18)およびシリコンゲル(56)上
にはエポキシ樹脂等の熱硬化性樹脂(58)が充填され
ると、シリコンゲル(56)は熱硬化性樹脂(58)に
完全に被覆されることになる。シリコンゲル(56)と
熱硬化性樹脂(58)との界面での接着性は良好ではな
いが、熱硬化性樹脂(58)は、上述したように、外部
リード端子固着領域(18)内に充填されることから外
枠(12)、壁体(14)および基板(30)面との密
着接着力性が良好であり、しかも相対向する2つの周端
辺領域で接着されているために、例えば、−40℃〜+
150℃の熱衝撃試験を行ってもシリコンゲル(56)
が伸縮、膨張しても熱硬化性樹脂(58)とケース材
(10)とが剥離することはない。The case material (10) is a wall body (14) for dividing the external lead fixing area and the integrated circuit element mounting area.
Is provided. The wall (14) is arranged near the external lead terminal fixing pad and is set lower than the outer frame (12). The integrated circuit element mounting region (16) surrounded by the wall body (14) is filled with the silicon gel (56) as described above. Silicon gel (5
When the external lead terminal fixing region (18) surrounded by the outer frame (12) and the silicone gel (56) are filled with a thermosetting resin (58) such as epoxy resin to cover and protect 6), The silicone gel (56) will be completely coated with the thermosetting resin (58). Although the adhesiveness at the interface between the silicone gel (56) and the thermosetting resin (58) is not good, the thermosetting resin (58) does not adhere to the external lead terminal fixing area (18) as described above. Since it is filled, the adhesiveness to the outer frame (12), the wall body (14) and the substrate (30) surface is good, and the two peripheral edge regions facing each other are bonded. , For example, -40 ° C to +
Silicon gel (56) even after heat shock test at 150 ℃
The thermosetting resin (58) and the case material (10) do not separate even when the material expands and contracts.
【0020】また、壁体(14)の底面部は第1の絶縁
金属基板(30)表面と当接しないように形成されてい
る。即ち、ケース材(10)と第1の絶縁金属基板(3
0)とが一体化されたとき、壁体(14)と基板(3
0)間は非当接状態となり、両者間には所定の間隔の空
間部が形成される。この空間部は外部リード端子(4
4)が固着される側の基板周端辺に形成され、リード端
子が形成されない基板面はケース材と当接されることに
なる。壁体(14)を第1の絶縁金属基板(30)と非
当接状態する理由は、外部リードを半田固着するときに
発生する半田ボールによる悪影響を回避するためであ
る。The bottom surface of the wall (14) is formed so as not to contact the surface of the first insulating metal substrate (30). That is, the case material (10) and the first insulating metal substrate (3
0) is integrated with the wall (14) and the substrate (3).
0) are not in contact with each other, and a space portion having a predetermined interval is formed between them. This space is the external lead terminal (4
The surface of the substrate, on which the lead terminals are not formed, is formed in contact with the case material. The reason why the wall body (14) is not in contact with the first insulating metal substrate (30) is to avoid an adverse effect caused by a solder ball generated when soldering the external lead.
【0021】ところで、図4は本実施例に適合する第1
の絶縁金属基板(30)の斜視図である。第1の絶縁金
属基板(30)には放熱特性および加工性を考慮して略
2mm厚のアルミニウムが使用され、絶縁性の向上のた
めにその表面が陽極酸化処理される。この絶縁金属基板
(30)は混成集積回路装置が略完成した時点で、数単
位乃至十数単位の混成集積回路基板から単位混成集積回
路装置のサイズに分割プレスされる。By the way, FIG. 4 shows a first embodiment which is adapted to this embodiment.
It is a perspective view of the insulating metal substrate (30) of FIG. Aluminum having a thickness of about 2 mm is used for the first insulating metal substrate (30) in consideration of heat dissipation characteristics and workability, and the surface thereof is anodized for improving the insulating property. When the hybrid integrated circuit device is substantially completed, the insulating metal substrate (30) is divided and pressed from several to ten or more units of the hybrid integrated circuit substrate into the size of the unit hybrid integrated circuit device.
【0022】外部リード用パッド(38)、ワイアボン
ディングパッド(40)、ダイボンドパッド(42)お
よび導電路(図示しない)は、ポリイミド樹脂等の接着
性を有する熱硬化性絶縁樹脂と略35μm厚の銅箔との
クラッド材を温度150℃〜170℃、1平方センチメ
ートル当り50〜100Kgの圧力で第1の絶縁金属基
板(30)にホットプレスした後、その銅箔をホトエッ
チングする等して所定パターンに形成される。なお、前
記熱硬化性絶縁樹脂はこのホットプレス工程で完全硬化
して略35μm厚の絶縁層となる。The external lead pad (38), the wire bonding pad (40), the die bond pad (42) and the conductive path (not shown) are made of a thermosetting insulating resin having adhesiveness such as polyimide resin and have a thickness of approximately 35 μm. A clad material with a copper foil is hot-pressed on the first insulating metal substrate (30) at a temperature of 150 ° C. to 170 ° C. and a pressure of 50 to 100 kg per square centimeter, and then the copper foil is photo-etched into a predetermined pattern. Is formed. The thermosetting insulating resin is completely cured in this hot pressing process to form an insulating layer having a thickness of about 35 μm.
【0023】集積回路素子(46)等の半導体素子およ
びその他の回路素子にはチップ部品が使用され、集積回
路素子(46)は銀ペースト等によりダイボンドパッド
(42)に固着され、チップコンデンサ、あるいはチッ
プ抵抗等の異型部品は所定のパッドに半田固着される。
これら回路素子は所定のパッド(40)(42)上にス
クリーン印刷したソルダーペーストに一時的に付着させ
た後、リフローして完全固着される。Chip parts are used for semiconductor elements such as the integrated circuit element (46) and other circuit elements, and the integrated circuit element (46) is fixed to the die bond pad (42) with silver paste or the like to form a chip capacitor or Atypical parts such as chip resistors are soldered and fixed to predetermined pads.
These circuit elements are temporarily attached to a screen-printed solder paste on predetermined pads (40) and (42) and then reflowed to be completely fixed.
【0024】そして、最後に、固着パッド(38)に外
部リード端子(44)が半田固着される。この外部リー
ド端子(44)は、リード端子(44)の先端部に約3
00〜350℃に加熱された半田ごてを数秒間圧接して
パッド(38)上にあらかじめ形成された半田を溶融さ
せてパッド(38)上にリード端子(44)が半田固着
される。Finally, the external lead terminals (44) are soldered and fixed to the fixing pads (38). This external lead terminal (44) has about 3 at the tip of the lead terminal (44).
A soldering iron heated to 00 to 350 [deg.] C. is pressed for several seconds to melt the solder previously formed on the pad (38), and the lead terminal (44) is soldered and fixed onto the pad (38).
【0025】図5を参照すると、前記したケース材(1
0)と第1の絶縁金属基板(30)とを図示するように
重ね、第1の絶縁金属基板(30)の周辺部とケース材
(10)の外枠(12)が、シリコン樹脂により仮接着
される。集積回路素子搭載領域(16)には、上述した
ように、シリコンゾルが注入され、壁体(14)と基板
(30)間に形成された空間には接着性樹脂(57)が
介在されるため、シリコンゾルが外部リード固着領域
(18)に流出しない。そして、上述したように、外枠
(12)に囲まれた領域に熱硬化性樹脂(58)が充填
され、シリコンゲル(56)が基板(30)と密着した
熱硬化性樹脂(58)により被覆され、熱衝撃時のシリ
コンゲル(56)の伸縮、膨張により熱硬化性樹脂(5
8)が剥離されることはない。Referring to FIG. 5, the case member (1
0) and the first insulating metal substrate (30) are overlapped as shown, and the peripheral portion of the first insulating metal substrate (30) and the outer frame (12) of the case material (10) are temporarily made of silicone resin. To be glued. As described above, the silicon sol is injected into the integrated circuit element mounting region (16), and the adhesive resin (57) is interposed in the space formed between the wall body (14) and the substrate (30). Therefore, the silicon sol does not flow out to the external lead fixing region (18). Then, as described above, the area surrounded by the outer frame (12) is filled with the thermosetting resin (58), and the silicon gel (56) is adhered to the substrate (30) by the thermosetting resin (58). The thermosetting resin (5) is coated and expands and contracts due to expansion and contraction of the silicon gel (56) during thermal shock.
8) is not peeled off.
【0026】図6は主として絶縁性向上のために使用さ
れる第2の絶縁金属基板(50)の斜視図である。第2
の絶縁金属基板(50)は第1の絶縁金属基板(30)
と同一の素材であり、ケース材(10)の放熱板に結合
するネジのための孔(22)に対応する位置に孔(5
4)が形成される。この第2の絶縁金属基板(50)は
シリコン樹脂(図2の符号(52)参照)によってケー
ス材(10)の外枠(12)に結合される。そして、こ
の接着に使用されたシリコン樹脂が第1の絶縁金属基板
(30)と図示しない放熱板間の絶縁性能を向上させ
る。この第2の基板(50)は外枠(12)内に充填さ
れる熱硬化性樹脂(58)によって第1の基板(30)
及びケース材(10)と完全に固着される。FIG. 6 is a perspective view of a second insulating metal substrate (50) used mainly for improving the insulating property. Second
The insulating metal substrate (50) of the first insulating metal substrate (30)
The same material as that of the case material (10), and the hole (5) at a position corresponding to the hole (22) for the screw coupled to the heat dissipation plate of the case material (10).
4) is formed. The second insulating metal substrate (50) is bonded to the outer frame (12) of the case member (10) by a silicone resin (see reference numeral (52) in FIG. 2). Then, the silicon resin used for this adhesion improves the insulating performance between the first insulating metal substrate (30) and a heat sink (not shown). The second substrate (50) is made of a thermosetting resin (58) filled in the outer frame (12) to form the first substrate (30).
And completely fixed to the case material (10).
【0027】以上に詳述した実施例では、外部リード端
子(44)は基板(30)の相対向する側辺から導出さ
れたものであるが、本発明はこれに限定されるものでは
なく、例えば基板(30)の4方向から外部リード端子
が導出されるタイプであっても同様に達成することがで
きることは説明するまでもない。In the embodiments described in detail above, the external lead terminals (44) are derived from the opposite sides of the substrate (30), but the present invention is not limited to this. It goes without saying that the same can be achieved even with a type in which external lead terminals are led out from four directions of the substrate (30), for example.
【0028】[0028]
【発明の効果】以上に詳述した如く、本発明に依れば、
ケース材に集積回路素子搭載領域と外部リード固着領域
を分割する壁体を形成したため、シリコンゾル注入パイ
プの外部リード固着領域へ接近するおそれが少なく、シ
リコンゾル注入パイプ外壁のシリコンゾルが外部リード
固着領域に付着する問題、飛散シリコンゾルが外部リー
ド固着領域に付着する問題が生じない。この結果、過酷
なヒートサイクルが加えられる場合にも、パッドの剥離
を生じない高信頼のシリコンゲル充填型の混成集積回路
装置を提供することができる。As described in detail above, according to the present invention,
Since the case body has a wall that divides the integrated circuit element mounting area and the external lead fixing area, there is little risk of approaching the external lead fixing area of the silicon sol injection pipe, and the silicon sol on the outer wall of the silicon sol injection pipe is fixed to the external lead. The problem of adhesion to the area and the problem that the scattered silicon sol adheres to the external lead fixing area do not occur. As a result, it is possible to provide a highly reliable silicon gel-filled hybrid integrated circuit device which does not cause peeling of the pad even when a severe heat cycle is applied.
【0029】また、本発明によれば、ケース材の壁体が
外枠よりも低く設定され、壁体内の集積回路素子搭載領
域内に充填されたシリコンゲルが外部リード端子固着領
域内に充填された熱硬化性樹脂によって被覆されること
により、熱硬化性樹脂が外部リード固着領域で強固に接
着されるため、極めて厳しい熱衝撃時においてもシリコ
ンゲルが伸縮、膨張したとしても熱硬化性樹脂がケース
材から剥離することはない。その結果、信頼性の高い混
成集積回路装置を提供することができる。Further, according to the present invention, the wall body of the case material is set lower than the outer frame, and the silicon gel filled in the integrated circuit element mounting region in the wall body is filled in the external lead terminal fixing region. By being coated with a thermosetting resin, the thermosetting resin is firmly bonded in the area where the external leads are fixed, so that even if the silicon gel expands and contracts and expands even during extremely severe thermal shock, It does not peel off from the case material. As a result, a highly reliable hybrid integrated circuit device can be provided.
【図1】本発明を示す斜視図である。FIG. 1 is a perspective view showing the present invention.
【図2】図1のA−A断面図である。FIG. 2 is a sectional view taken along line AA of FIG.
【図3】ケース材の斜視図である。FIG. 3 is a perspective view of a case member.
【図4】第1の絶縁金属基板の斜視図である。FIG. 4 is a perspective view of a first insulating metal substrate.
【図5】ケース材と第1の金属基板とを一体化した斜視
図である。FIG. 5 is a perspective view in which a case member and a first metal substrate are integrated.
【図6】第2の絶縁金属基板を示す斜視図である。FIG. 6 is a perspective view showing a second insulating metal substrate.
【図7】従来例を示す断面図である。FIG. 7 is a cross-sectional view showing a conventional example.
10 ケース材 12 外枠 16 集積回路素子搭載領域 18 外部リード固着領域 30 第1の絶縁金属基板 32 絶縁層 38 外部リード用パッド 40 ワイアボンディングパッド 42 ダイボンドパッド 44 外部リード端子 46 集積回路素子 50 第2の絶縁金属基板 52 絶縁層 56 シリコンゲル 57 シリコン接着剤 58 熱硬化性樹脂 10 Case Material 12 Outer Frame 16 Integrated Circuit Element Mounting Area 18 External Lead Fixing Area 30 First Insulating Metal Substrate 32 Insulating Layer 38 External Lead Pad 40 Wire Bonding Pad 42 Die Bond Pad 44 External Lead Terminal 46 Integrated Circuit Element 50 Second Insulating metal substrate 52 Insulating layer 56 Silicon gel 57 Silicon adhesive 58 Thermosetting resin
Claims (2)
に複数の集積回路素子および外部リード端子を固着、搭
載した集積回路基板と、その集積回路基板に当接され、
集積回路素子搭載領域を囲み、且つ、外部リード端子固
着領域との境界を分割する壁体とその壁体の外周部に形
成され外部リード端子固着領域を囲む外枠とを有する樹
脂製のケース材とを具備し、 前記壁体は前記外枠よりも低く形成され、その壁体によ
って囲まれた前記集積回路素子搭載領域内にシリコンゲ
ルが充填され、前記外枠で囲まれた領域内の外部リード
端子固着領域および前記シリコンゲル上に熱硬化性樹脂
が充填、積層されたことを特徴とする混成集積回路装
置。1. An integrated circuit board having a plurality of integrated circuit elements and external lead terminals fixed and mounted on a circuit pattern formed on an insulating metal substrate, and abutting on the integrated circuit board,
A resin case material having a wall body that surrounds the integrated circuit element mounting region and divides a boundary with the external lead terminal fixing region, and an outer frame that is formed on an outer peripheral portion of the wall body and surrounds the external lead terminal fixing region. The wall is formed lower than the outer frame, the integrated circuit element mounting region surrounded by the wall is filled with silicon gel, and the outside of the region surrounded by the outer frame is provided. A hybrid integrated circuit device, wherein a thermosetting resin is filled and laminated on the lead terminal fixing region and the silicon gel.
に複数の集積回路素子および少なくとも相対する周端部
に外部リード端子を固着、搭載した集積回路基板と、そ
の集積回路基板に当接され、集積回路素子搭載領域を囲
み、且つ、外部リード端子固着領域との境界を分割する
壁体とその壁体の外周部に形成され外部リード端子固着
領域を囲む外枠とを有し、シリコンゲルと熱硬化性樹脂
の充填のための開口部を同一方向に設けられた樹脂製の
ケース材とを具備し、 前記壁体は前記外枠よりも低く形成され、その壁体によ
って囲まれた前記集積回路素子搭載領域内にシリコンゲ
ルが充填され、前記外枠で囲まれた領域内の外部リード
端子固着領域および前記シリコンゲル上にエポキシ樹脂
が充填、積層されたことを特徴とする混成集積回路装
置。2. An integrated circuit board in which a plurality of integrated circuit elements and external lead terminals are fixedly mounted on at least opposite peripheral end portions on a circuit pattern formed on an insulating metal substrate, and the integrated circuit board is brought into contact with the integrated circuit board. A silicon gel that surrounds the integrated circuit element mounting region and that has a wall that divides the boundary with the external lead terminal fixing region and an outer frame that is formed on the outer periphery of the wall and that surrounds the external lead terminal fixing region; And a case member made of resin provided with openings for filling a thermosetting resin in the same direction, wherein the wall body is formed lower than the outer frame, and the integrated body surrounded by the wall body is formed. A hybrid integrated circuit characterized in that a silicon gel is filled in a circuit element mounting area, and an epoxy resin is filled and laminated on the external lead terminal fixing area in the area surrounded by the outer frame and the silicon gel. Location.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4169181A JPH0613499A (en) | 1992-06-26 | 1992-06-26 | Hybrid integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4169181A JPH0613499A (en) | 1992-06-26 | 1992-06-26 | Hybrid integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0613499A true JPH0613499A (en) | 1994-01-21 |
Family
ID=15881749
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4169181A Pending JPH0613499A (en) | 1992-06-26 | 1992-06-26 | Hybrid integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0613499A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6313521B1 (en) * | 1998-11-04 | 2001-11-06 | Nec Corporation | Semiconductor device and method of manufacturing the same |
-
1992
- 1992-06-26 JP JP4169181A patent/JPH0613499A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6313521B1 (en) * | 1998-11-04 | 2001-11-06 | Nec Corporation | Semiconductor device and method of manufacturing the same |
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