Nothing Special   »   [go: up one dir, main page]

JPH06105779B2 - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof

Info

Publication number
JPH06105779B2
JPH06105779B2 JP58030792A JP3079283A JPH06105779B2 JP H06105779 B2 JPH06105779 B2 JP H06105779B2 JP 58030792 A JP58030792 A JP 58030792A JP 3079283 A JP3079283 A JP 3079283A JP H06105779 B2 JPH06105779 B2 JP H06105779B2
Authority
JP
Japan
Prior art keywords
film
substrate
boron
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58030792A
Other languages
Japanese (ja)
Other versions
JPS59156998A (en
Inventor
清 森本
俊宜 高木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Futaba Corp
Original Assignee
Futaba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Futaba Corp filed Critical Futaba Corp
Priority to JP58030792A priority Critical patent/JPH06105779B2/en
Priority to US06/584,403 priority patent/US4565741A/en
Publication of JPS59156998A publication Critical patent/JPS59156998A/en
Priority to US06/778,872 priority patent/US4622236A/en
Publication of JPH06105779B2 publication Critical patent/JPH06105779B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02269—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by thermal evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02516—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

【発明の詳細な説明】 「発明の目的」 〔分野〕 本願の装置の発明は、基体上に窒化ほう素からなる絶縁
層を有する半導体装置の技術分野に属する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] [Field] The invention of the device of the present application belongs to the technical field of a semiconductor device having an insulating layer made of boron nitride on a substrate.

本願の方法の発明は、基体上に絶縁皮膜を形成する工程
と、前記絶縁皮膜上に半導体層をエピタシャル成長させ
る工程とを備えてなる半導体装置の製造方法の技術分野
に属する。The method invention of the present application belongs to the technical field of a method for manufacturing a semiconductor device, which comprises a step of forming an insulating film on a substrate and a step of epitaxially growing a semiconductor layer on the insulating film.

〔従来の技術〕[Conventional technology]

近時、半導体素子の高集積化にともない、半導体チップ
あるいは半導体層を積み重ねて一つの半導体素子を構成
する三次元実装の研究が行なわれているが、これを実現
するにはその構造上の特徴から以下の２つの問題点を克
服する必要がある。Recently, along with the high integration of semiconductor elements, research on three-dimensional packaging in which semiconductor chips or semiconductor layers are stacked to form one semiconductor element has been conducted. Therefore, it is necessary to overcome the following two problems.

一つは、半導体の層間絶縁層上に半導体素子を作り込む
のに十分な結晶性を有する半導体層を形成することが困
難な点を克服する必要がある。すなわち、半導体装置を
形成するには、半導体基板に対して、酸化、成膜、レジ
スト塗布、エッチング、イオン注入、洗浄時の工程を繰
り返し行い、素子及び配線層を形成する必要がある。こ
の工程を通し半導体素子が形成された基体表面は、当然
凹凸が形成されるとともに、パッシベーション用の酸化
膜等で被覆されている。したがってその表面状態はアモ
ルファス状となり、このアモルファス状の表面に絶縁層
を形成してもこの絶縁層自体アモルファス状であって、
さらにその絶縁層上に結晶性の良い半導体層を成長させ
ることはできない。First, it is necessary to overcome the difficulty of forming a semiconductor layer having sufficient crystallinity on a semiconductor interlayer insulating layer to form a semiconductor device. That is, in order to form a semiconductor device, it is necessary to repeatedly perform steps of oxidation, film formation, resist coating, etching, ion implantation, and cleaning on a semiconductor substrate to form an element and a wiring layer. The surface of the substrate on which the semiconductor element is formed through this process is naturally formed with irregularities and is covered with an oxide film for passivation or the like. Therefore, the surface state becomes amorphous, and even if an insulating layer is formed on this amorphous surface, the insulating layer itself is amorphous,
Furthermore, a semiconductor layer having good crystallinity cannot be grown on the insulating layer.

さらに、もう一つは、半導体層間の絶縁をどの様にして
行うかとうい点と、いかにしてその放熱性を向上させる
かという点が重要である。一般に、電気的絶縁体は熱伝
導特性が悪く、電気的絶縁性と放熱特性とは相反する関
係にあるが、材料の選定や、製造を工夫することによっ
て上記の問題点である電気的絶縁性と熱伝導特性を共に
向上することができれば、それだけ三次元実装における
集積化、高密度実装の度合を促進できることになる。Another important point is how to insulate the semiconductor layers and how to improve the heat dissipation. In general, electrical insulators have poor heat conduction characteristics, and there is a contradictory relationship between electrical insulation properties and heat dissipation characteristics. However, by selecting materials and devising manufacturing, the electrical insulation properties If both and the heat conduction characteristics can be improved, the degree of integration and high-density mounting in three-dimensional mounting can be promoted to that extent.

このような観点から、本発明者は、電気的絶縁性及び熱
伝導特性の良好な特性を有すると共に、酸化ベリウムな
どと異なり、人体に無害であるためその取り扱いも比較
的容易な窒化ほう素（以下BNという）に着目した。一般
には、このBNは窒素とほう素とを1500℃以上で発生させ
る等の手段により六方晶系の結晶構造をもつ固体として
得られている。そして、このBN結晶は、結晶の特定軸方
向において高い熱伝導率をもつ。このBN皮膜を形成する
試みは種々行なわれており、「応用物理」誌Vol.46No.2
（1977）p.120〜122にはスパッタ法によりガラス基板や
Si単結晶の（111）面上に六方晶BN皮膜を作ることが示
されている。しかしながら、このBN皮膜は六方晶である
ことが確認されている止まり、この六方晶BN皮膜上に結
晶性の良い半導体層、すなわち半導体素子を作り込める
ことができる半導体層をエピタシャル成長させることの
再現性は未だ乏しいという問題があった。From this point of view, the present inventor has boron nitride (e.g., boron nitride, which has good electrical insulation and thermal conductivity characteristics, and is relatively harmless to the human body, unlike beryllium oxide, etc.). Focused on BN). Generally, this BN is obtained as a solid having a hexagonal crystal structure by means of generating nitrogen and boron at 1500 ° C. or higher. And this BN crystal has high thermal conductivity in the specific axis direction of the crystal. Various attempts have been made to form this BN film, Vol.46 No.2 of "Applied Physics" magazine.
(1977) p.120-122, glass substrates and
It has been shown to form a hexagonal BN film on the (111) plane of Si single crystals. However, it has been confirmed that this BN film is hexagonal, and the reproduction of the epitaxial growth of a semiconductor layer with good crystallinity, that is, a semiconductor layer in which a semiconductor element can be built, is reproduced on this hexagonal BN film. There was a problem that the sex was still poor.

〔発明が解決しようとする課題〕[Problems to be Solved by the Invention]

上記問題の原因は、六方晶BN皮膜の特定軸方法への配向
性が未だ不十分な点にあると考えられる。したがって、 本装置の発明が解決しようとする課題は、アモルファス
基体や、半導体形成で行われる成膜、イオン注入等の物
理的処理あるいは酸化、エッチング等の化学的処理を受
けて、表面に半導体素子が形成され、そのために表面は
凹凸が形成されているとともに、パッシべーション用の
酸化膜等で被覆されていて、表面がアモルファス状とな
っている基体の表面に、特定軸方向に配向性の良い、六
方晶BN皮膜を形成することである。It is considered that the cause of the above problem is that the orientation of the hexagonal BN film in the specific axis method is still insufficient. Therefore, the problem to be solved by the invention of this device is that the surface of the semiconductor element is subjected to physical treatment such as film formation or ion implantation performed in semiconductor formation or chemical treatment such as oxidation or etching. Are formed on the surface of the substrate, which has an uneven surface, and is covered with an oxide film for passivation, etc., and has an amorphous surface. Good is to form a hexagonal BN film.

また、本方法の発明が解決しようとする課題は、アモル
ファス基体や、半導体形成で行なわれる成膜、イオン注
入等の物理学処理あるいは酸化、エッチング等の化学的
処理を受けて、表面に半導体素子が形成され、そのため
に表面は凹凸が形成されているとともに、パッシべーシ
ョン用の酸化膜等で被覆されていて、表面がアモルファ
ス状となっている基体を持つ半導体装置の製造方法にお
いて、該基体の表面に、六方晶BN皮膜を特定軸方向に配
向性良く成長させることである。Further, the problem to be solved by the invention of the present method is that the surface of the semiconductor element is subjected to a physical treatment such as film formation or ion implantation or a chemical treatment such as oxidation or etching, which is performed in the formation of a semiconductor. In the method for manufacturing a semiconductor device having a substrate having an amorphous surface, the substrate is formed with unevenness and is therefore covered with an oxide film or the like for passivation. The purpose is to grow a hexagonal BN film on the surface of the with good orientation in a specific axis direction.

「発明の構成」 〔課題を解決するための手段〕 本装置の発明は、上記の課題を解決するために、前記少
なくとも表面がアモルファス状である基体の表面上にＣ
軸方向に優先配向したBN皮膜を形成する、という手段を
講じた。[Structure of the Invention] [Means for Solving the Problems] In order to solve the above-mentioned problems, the present invention provides a method in which C is formed on the surface of the substrate, at least the surface of which is amorphous.
A means of forming a BN film preferentially oriented in the axial direction was taken.

また、本方法の発明は、上記の課題を解決するために、
一個又は複数個のノズルを有する密閉形のるつぼ内に充
填した酸化ほう素又は硫化ほう素をその蒸気温度以上に
加熱して蒸気化し、ほう素の蒸気を10-2Torr以下の圧力
を有する窒素又はアンモニアと水素との混合ガス雰囲気
中に前記ノズルから噴出させてクラスタを形成させ、少
なくともほう素のクラスタ及び窒素又はアンモニアと水
素との混合ガスのそれぞれの一部に電子を射突させてイ
オン化し、この少なくとも一部がイオン化されたほう素
のクラスタを窒素とともに、少なくとも表面がアモルフ
ァス状である基体表面に射突させて皮膜を形成し、然る
後、該皮膜を真空中で熱処理して該基体表面にＣ軸優先
配向した窒化ほう素皮膜を形成する工程と、前記窒化ほ
う素皮膜上に半導体層をエピタシャル成長させる工程を
備えさせる、とう手段を講じた。In addition, the invention of this method, in order to solve the above problems,
Nitrogen having a pressure of 10 -2 Torr or less by heating boron oxide or boron sulfide filled in a closed crucible having one or more nozzles to vaporize it by heating it to a temperature above its vapor temperature. Or, it is ejected from the nozzle in a mixed gas atmosphere of ammonia and hydrogen to form clusters, and electrons are bombarded with at least a part of each of the boron clusters and nitrogen or the mixed gas of ammonia and hydrogen for ionization. Then, at least a part of this ionized boron cluster is bombarded with nitrogen onto the surface of the substrate whose surface is at least amorphous to form a film, and then the film is heat treated in a vacuum. A step of forming a boron nitride film having a C-axis preferential orientation on the surface of the substrate; and a step of epitaxially growing a semiconductor layer on the boron nitride film. Take steps.

〔作用〕[Action]

本装置の発明は、上記の手段を講じたことにより、Ｃ軸
方向に優先配向したBN皮膜は、特定軸方向に配向性の良
い、六方晶BN皮膜に該当することとなる。According to the invention of this apparatus, the BN film preferentially oriented in the C-axis direction corresponds to the hexagonal BN film having a good orientation in the specific axis direction by taking the above means.

本方法の発明の作用については、言語のみでは説明がき
わめて困難につき、本方法の発明の実施例における実験
的内容の説明をもってこれに代えることとする。The operation of the invention of the present method is extremely difficult to explain only in language, and will be replaced by the explanation of the experimental contents in the embodiment of the present invention.

〔実施例〕〔Example〕

以下、本方法の発明の一実施例を図面を参照して説明す
る。An embodiment of the present invention will be described below with reference to the drawings.

まず第１図を参照しつつ、クラスタイオンビーム法（以
下ICB法という）を用いて本方法の発明に係る半導体装
置の製造方法に必要とされるＣ軸方向に優先配向したBN
皮膜の製造方法に用いられる装置の構造を説明する。First, referring to FIG. 1, a BN preferentially oriented in the C-axis direction, which is required in a method for manufacturing a semiconductor device according to the present invention by using a cluster ion beam method (hereinafter referred to as ICB method), is used.
The structure of an apparatus used in the method for producing a film will be described.

図中１は、上部に0.5mm〜2.0mm程度の直径の一個または
複数個のノズル２を有する密閉系のるつぼである。この
ノズル２は、その軸方向の厚みをできるだけ薄くし、少
なくともノズル径よりは厚みを薄くするいわゆるアスペ
クト比を１以下にしておくことが望ましい。また、この
るつぼ１内には、粉末状フレーク状あるいはこれらを適
宜加工してペレット状とした酸化ほう素（B2O3）３が充
填されている。In the figure, reference numeral 1 is a closed crucible having one or a plurality of nozzles 2 having a diameter of about 0.5 mm to 2.0 mm. It is desirable that the nozzle 2 has a so-called aspect ratio of 1 or less in which the thickness in the axial direction is made as thin as possible and the thickness is made smaller than at least the nozzle diameter. The crucible 1 is filled with boron oxide (B 2 O 3 ) 3 in the form of powder flakes or pellets obtained by appropriately processing these flakes.

４は、上記るつぼ１の周囲に設けられた加熱装置であ
り、この実施例ではるつぼ１の周囲に電子放出用のコイ
ル状フィラメントを配置し、これを加熱するとともに図
示しない電源によりるつぼ１に正電位を付与してフィラ
メントからの電子も加速し、るつぼ１の表面に射突させ
てるつぼ１の温度を上昇させる電子衝撃形の加熱装置を
用いている。Reference numeral 4 denotes a heating device provided around the crucible 1. In this embodiment, a coiled filament for electron emission is arranged around the crucible 1, and the filament is heated by the power source (not shown). An electron-impact type heating device is used which applies an electric potential to accelerate electrons from the filament and causes the temperature of the crucible 1 to hit the surface of the crucible 1 to rise.

そのほか、るつぼ１を加熱する方法として、るつぼ１が
導電材料で形成されている場合は、このるつぼ１の上下
部に特定の端子を設け、るつぼ１自体に低電圧大電流を
印加することによってるつぼ１全体を加熱する抵抗加熱
法、あるいは、るつぼ１の周囲にヒータを配置してるつ
ぼ１の加熱を行う輻射加熱法や、これらの組合せによる
加熱方法を必要に応じて適宜選択して使用できる。In addition, as a method of heating the crucible 1, when the crucible 1 is made of a conductive material, specific terminals are provided on the upper and lower portions of the crucible 1 and a low voltage large current is applied to the crucible 1 itself. A resistance heating method of heating the whole 1 or a radiant heating method of heating the crucible 1 by arranging a heater around the crucible 1 or a heating method by a combination thereof can be appropriately selected and used as necessary.

次に、５は熱遮へい板で、６はイオン化室であり、後述
する酸化ほう素（B2O3）の蒸気の通路を囲むように円
筒、角筒、あるいは平行板状に形成された網状のイオン
化用の陽極７と、この陽極７の周囲に配置された電子放
出用のフィラメント８及び遮へい板９とにより構成され
ている。Next, 5 is a heat shield plate, and 6 is an ionization chamber, which is a net-like shape formed in a cylinder, a square tube, or a parallel plate shape so as to surround a passage of a vapor of boron oxide (B 2 O 3 ) described later. The anode 7 for ionization, the filament 8 for electron emission and the shield plate 9 arranged around the anode 7.

10は、皮膜を被着させる基体11を保持する保持ホルダ、
12は不要時に上記基体11に対するほう素（Ｂ）あるいは
酸素（Ｏ）の射突を阻止するシャッタである。ここで、
上記基体11は、半導体形成で行われる成膜、イオン注入
等の物理的処理あるいは酸化、エッチング等の化学的処
理を受けて、表面に半導体素子が形成され、そのために
表面は凹凸が形成されているとともに、パッシベーショ
ン用の酸化膜等で被覆されていて、表面がアモルファス
状となっている基体、少くとも表面がアモルファス状で
る各種金属基板あるいはガラスなどのアモルファス状絶
縁基板などを選択できる。10 is a holding holder for holding a substrate 11 on which a coating is applied,
Reference numeral 12 is a shutter that prevents the boron (B) or oxygen (O) from impinging on the substrate 11 when unnecessary. here,
The substrate 11 is subjected to physical treatment such as film formation performed in semiconductor formation, physical treatment such as ion implantation, or chemical treatment such as oxidation and etching to form a semiconductor element on the surface, and therefore, the surface has irregularities. In addition, it is possible to select a substrate which is covered with an oxide film or the like for passivation and has an amorphous surface, various metal substrates having at least an amorphous surface, or an amorphous insulating substrate such as glass.

さらに13は、一個ないし複数個のノズル14が設けられた
ガス供給用パイプである。この場合、このノズル14はる
つぼ１のノズル２の近傍に配設されているが、上記基板
11の近傍にノズル14を設けるようにしてもよい。Further, 13 is a gas supply pipe provided with one or a plurality of nozzles 14. In this case, the nozzle 14 is arranged in the vicinity of the nozzle 2 of the crucible 1,
The nozzle 14 may be provided in the vicinity of 11.

また15は、加速電極であり、必要に応じて前記イオン化
室６と基板11との間に設けられ、図示しない電源により
るつぼ１に対して負の電位が印加され、後述するイオン
化されたB2O3蒸気を加速するためのものである。Reference numeral 15 denotes an accelerating electrode, which is provided between the ionization chamber 6 and the substrate 11 as required, and a negative potential is applied to the crucible 1 by a power source (not shown) to ionize B 2 which will be described later. It is for accelerating O 3 vapor.

さらに図示はしてはいないが、必要に応じて前記基体11
の近傍に、基体加熱用の加熱装置を設けるようにしても
よい。Although not shown in the drawing, the base 11
A heating device for heating the substrate may be provided in the vicinity of.

しかして、上述した各部が図示しない真空容器内に適宜
な支持部材により支持されて配設され、この真空容器が
図示しない真空排気装置に接続されて、10-8Torrあるい
はそれ以下の真空度の高真空雰囲気に保持できる構成に
なる。また、上記ガス供給用パイプ13から、たとえば窒
素ガスと水素ガスの混合比が90対10の混合ガスいわゆる
フォーミングやその他の反応性ガスＧを真空容器内に導
入できるようになっている。Then, each of the above-mentioned parts is disposed in a vacuum container (not shown) supported by an appropriate supporting member, and this vacuum container is connected to a vacuum exhaust device (not shown), and a vacuum degree of 10 -8 Torr or less is provided. The structure can be maintained in a high vacuum atmosphere. Further, from the gas supply pipe 13, for example, a mixed gas in which the mixing ratio of nitrogen gas and hydrogen gas is 90:10, so-called forming or other reactive gas G can be introduced into the vacuum container.

次に、上述した装置を用いた、Ｃ軸方向に優先配向した
BN皮膜の製造方法について述べる。Next, using the above-mentioned device, preferential orientation was carried out in the C-axis direction.
The manufacturing method of the BN film is described.

まず、るつぼ１内に適宜形状の酸化ほう素（B2O3）３を
充填すると共に、上述のように少なくとも10-8Torrある
いはそれ以下の真空度にひかれている真空容器内に、ガ
ス供給用パイプ13を介したたとえば窒素ガスと水素ガス
の混合比が90対10の混合ガスＧを導入し、真空容器内の
圧力を10-2Torr以下、好ましくは3.5×10-4Torr程度に
保つ。First, the crucible 1 is filled with boron oxide (B 2 O 3 ) 3 having an appropriate shape, and a gas is supplied into the vacuum container evacuated to a vacuum degree of at least 10 -8 Torr or less as described above. For example, a mixed gas G having a mixing ratio of nitrogen gas and hydrogen gas of 90:10 is introduced through the pipe 13 for keeping the pressure in the vacuum container at 10 -2 Torr or less, preferably about 3.5 x 10 -4 Torr. .

次に、加熱装置４を作動させてるつぼ１内の酸化ほう素
（B2O3）３を蒸発させるべく、その蒸発温度以上である
1350℃から1450℃の温度範囲において加熱して蒸気3aに
し、るつぼ１のノズル２からこの蒸気3aをるつぼ１の内
外の圧力差によりるつぼ１外（窒素雰囲気中）へ噴出さ
せる。一般にBNは、結晶形として六方晶系又は立方晶系
を取り得る。しかしながら立方晶系は、高温高圧下（15
00℃以上、45000気圧）で合成されるものである。した
がって、本発明のように真空中で形成される場合は六方
晶系として成長する。Next, in order to evaporate the boron oxide (B 2 O 3 ) 3 in the crucible 1 in which the heating device 4 is operated, the temperature is higher than the evaporation temperature.
It is heated in the temperature range of 1350 ° C. to 1450 ° C. to form steam 3a, and this steam 3a is ejected from the nozzle 2 of the crucible 1 to the outside of the crucible 1 (in a nitrogen atmosphere) due to the pressure difference between the inside and outside of the crucible 1. Generally, BN can take a hexagonal system or a cubic system as a crystal form. However, the cubic system (15
It is synthesized at 00 ° C or higher and 45000 atm). Therefore, when formed in vacuum as in the present invention, it grows as a hexagonal system.

噴出された蒸気3aは、噴出速度に相当する運動エネルギ
ーを得て基体11方向へ向かう蒸気流3bとなり、噴出時に
おける断熱膨張に基づく過冷却現象を利用して蒸気状の
ほう素（Ｂ）がファンデルワールス力で緩く結合した巨
大な塊状原子集団、いわゆるクラスタを形成する。この
クラスタを形成することにより、次に述べるイオン化室
６でのイオン化効率の向上が図れたり、あるいは基体11
上によりＣ軸方向に優先配向した良質のBN皮膜16が形成
できるようになる。The ejected vapor 3a obtains kinetic energy corresponding to the ejection velocity and becomes a vapor flow 3b toward the substrate 11, and vapor-like boron (B) is generated by utilizing the supercooling phenomenon based on adiabatic expansion during ejection. It forms a large group of loosely coupled massive atoms, so-called clusters, by Van der Waals forces. By forming this cluster, the ionization efficiency in the ionization chamber 6 described below can be improved, or the base 11
As a result, a good quality BN film 16 preferentially oriented in the C-axis direction can be formed.

そして、上記運動エネルギーを得たほう素の蒸気流ない
しクラスタ3bは、イオン化室６に入り、ここで少なくと
もその一部がイオン化される。すなわち、加熱されたフ
ィラメント８から放出された電子が、このフィラメント
８と網状の陽極７との間に印加された100〜1000V程度の
電圧により加速され、網状の陽極７を通り抜けて前記ほ
う素の蒸気流ないしクラスタ3bに射突し、ほう素の蒸気
流ないしクラスタ3bを構成している原子の最外殻電子を
はじき飛ばして、少なくともその一部がプラスイオンさ
れる。この場合、このほう素のクラスタは、前記イオン
化室６でクラスタを構成する原子集団のうちの１個の原
子が前記電子衝撃によりイオン化合され、いわゆるクラ
スタイオンが形成される。なお、ノズル14から噴出した
混合ガスＧもその一部はイオン化室６に入り電子衝撃を
受けてイオン化される。Then, the boron vapor flow or the cluster 3b having the above kinetic energy enters the ionization chamber 6, where at least a part thereof is ionized. That is, the electrons emitted from the heated filament 8 are accelerated by a voltage of about 100 to 1000 V applied between the filament 8 and the mesh-like anode 7, pass through the mesh-like anode 7, and are emitted. It impinges on the vapor flow or cluster 3b and repels the outermost shell electrons of the atoms forming the vapor flow or cluster 3b of boron, and at least part of it is positively ionized. In this case, in this boron cluster, one atom of the atomic group forming the cluster in the ionization chamber 6 is ionized by the electron impact to form a so-called cluster ion. A part of the mixed gas G ejected from the nozzle 14 also enters the ionization chamber 6 and undergoes electron impact to be ionized.

このようにして、イオン化されたクラスタは、中性クラ
スタおよびその通路にある混合ガスＧとともにさらに基
体11方向に進み、シャッタ12が開かれていると基体11の
表面に射突され、形成されたクラスタが表面マイグレー
ション効果により個々の原子に分かれて基体11の表面に
拡散して基体11表面上に皮膜が形成される。そして、蒸
着後上記形成された皮膜を350℃程度の温度で１時間真
空中で熱処理（アニール）を行ない、混合ガスＧ中の水
素と酸化ほう素中の酸素との反応で生成される水分が、
上記皮膜に含まれるのをなくすと、Ｃ軸方向に優先配向
したBN皮膜16が得られる。In this way, the ionized cluster further proceeds toward the substrate 11 along with the neutral cluster and the mixed gas G in the passage thereof, and is projected and formed on the surface of the substrate 11 when the shutter 12 is opened. The clusters are divided into individual atoms by the surface migration effect and diffused to the surface of the base 11 to form a film on the surface of the base 11. Then, after vapor deposition, the formed film is heat-treated (annealed) in a vacuum at a temperature of about 350 ° C. for 1 hour so that the water generated by the reaction between hydrogen in the mixed gas G and oxygen in the boron oxide is generated. ,
When the inclusion in the film is eliminated, the BN film 16 preferentially oriented in the C-axis direction is obtained.

ここで、基体11に射突されるほう素の蒸気流ないしクラ
スタ3bは、前述したようにイオン化室６を通過すること
によって少なくともその一部がプラスイオン化されてい
るので、このイオンのもつ電界が皮膜形成等の初期段階
において有効に作用する。Here, since the boron vapor flow or cluster 3b impinging on the substrate 11 is at least partly positively ionized by passing through the ionization chamber 6 as described above, the electric field possessed by these ions forms a film. It works effectively in the initial stage such as formation.

すなわち、このイオンのもつ電界によって結晶成長のた
めの核形成が促進され、さらにこの形成された核を中心
にして原子が集まり島状領域を形成する、いわゆるコア
レッセンスに有効に作用する。That is, nucleation for crystal growth is promoted by the electric field possessed by the ions, and the so-called coalescence, in which atoms gather around the formed nuclei to form island regions, effectively acts.

また、このイオン化は、ＢとＮの反応をも促進し化学量
論的組成にあった結晶性の良い皮膜が形成できるように
するという効果をも有する。This ionization also has the effect of promoting the reaction of B and N so that a film with good crystallinity and having a stoichiometric composition can be formed.

さらにまた、ほう素の蒸気流ないしクラスタ3bは、噴出
時に得た運動エネルギーをもって基体11に射突するよう
になるので、この入射エネルギーにより基体11に対し
て、付着力の強い皮膜が形成できるとともに、BN皮膜16
のパッキング密度の増加や、結晶性の改善に大きく寄与
し、良質のBN皮膜16が形成できることになる。すなわ
ち、基体11全体がアモルファス物質であったり、あるい
は半導体形成で行われる成膜、イオン注入等の物理的処
理あるいは酸化、エッチング等の化学的処理を受けて、
表面に半導体素子が形成され、そのため表面は凹凸が形
成されているとともに、パッシベーション用の酸化膜等
で被覆されていて、表面がアモルファス状であっても、
六方晶系の特定軸方向であるＣ軸方向に配向する皮膜16
が得られる。Furthermore, since the vapor flow of boron or the cluster 3b comes to impinge on the substrate 11 with the kinetic energy obtained at the time of ejection, this incident energy can form a film having a strong adhesive force on the substrate 11. , BN film 16
It greatly contributes to the increase of the packing density and the improvement of the crystallinity, and the good quality BN film 16 can be formed. That is, the entire substrate 11 is an amorphous substance, or subjected to physical treatment such as film formation, ion implantation, or chemical treatment such as oxidation or etching performed in semiconductor formation,
A semiconductor element is formed on the surface, and therefore, the surface has irregularities and is covered with an oxide film for passivation, etc., and even if the surface is amorphous,
Film 16 oriented in the C-axis which is the specific axis of the hexagonal system 16
Is obtained.

さらに、前記陽極７に印加する加速電圧を調整し、フィ
ラメント８から引き出すイオン化電流を変えることによ
って蒸気流3bのイオン化率を制御でき、これによって基
体11に被着されるBN皮膜16の結晶性や諸特性を制御でき
る。Furthermore, the ionization rate of the vapor flow 3b can be controlled by adjusting the accelerating voltage applied to the anode 7 and changing the ionization current drawn from the filament 8, and the crystallinity of the BN film 16 deposited on the substrate 11 can be controlled by this. Various characteristics can be controlled.

ところで、上述した実施例ではるつぼ１内外の圧力差を
利用して蒸気3aをるつぼ１外に噴出させ、運動エネルギ
ーを得るようにしているが、イオン化室６を通過してす
少なくともその一部がイオン化された前記ほう素の蒸気
流ないしクラスタ3bを電界によっても加速し、さらに運
動エネルギーを増大させて結晶性の制御や改善を行なう
ようにしてもよい。By the way, in the above-described embodiment, the steam 3a is ejected to the outside of the crucible 1 by utilizing the pressure difference between the inside and outside of the crucible 1 to obtain the kinetic energy. The ionized vapor stream of boron or the cluster 3b may be accelerated by an electric field to further increase the kinetic energy to control or improve the crystallinity.

すなわち、加速電極15に、るつぼ１に対して負の電圧、
例えば０〜10KV程度の適度な加速電圧を印加すれば、イ
オン化室６を通過してイオン化された前記ほう素の蒸気
流ないしクラスタ3b中の粒子が加速されて運動エネルギ
ーを得、このエネルギーが皮膜形成時に結晶性の改善や
その制御い有効に作用し、さらに良質のBN皮膜16が形成
できるようになる。That is, the accelerating electrode 15 has a negative voltage with respect to the crucible 1,
For example, if an appropriate accelerating voltage of about 0 to 10 KV is applied, the vapor stream of the boron ionized through the ionization chamber 6 or the particles in the cluster 3b are accelerated to obtain kinetic energy, and this energy is applied to the film. At the time of formation, the crystallinity is effectively improved and its control is effectively exerted, and the BN film 16 of higher quality can be formed.

また、この電界によってイオン化された粒子に付与され
たエネルギーは、付着強度を改善する上からも有効に作
用する。Further, the energy imparted to the particles ionized by the electric field also effectively acts to improve the adhesion strength.

またこの場合、前記保持ホルダ10が導電材料で形成され
ている場合は、加速電極15を別個に設けずに、この保持
ホルダ10とるつぼ１との間に加速用の電界を印加するよ
うにしてもよい。Further, in this case, when the holding holder 10 is made of a conductive material, an acceleration electric field is applied between the holding holder 10 and the crucible 1 without separately providing the acceleration electrode 15. Good.

なお、本方法の発明に係る製造方法の実施例は、上述し
た実施例には限定されず、るつぼに充填される蒸発物質
として硫化ほう素でも可能であり、また真空容器内に導
入するガス（反応性ガス）としては、窒素ガスあるいは
アンモニアガスでもよい。この場合は、基体11表面に形
成された皮膜を真空中で熱処理（アニール）を行い、混
合ガスＧ中の水素と硫化ほう素中に硫黄との反応で生成
される硫化水素系のガスが上記皮膜中に含まれるのをな
くすると、Ｃ軸方向に優先配向したBN皮膜が得られる。Incidentally, the embodiment of the manufacturing method according to the present invention is not limited to the above-mentioned embodiment, it is also possible to use boron sulfide as the evaporation material to be filled in the crucible, and the gas to be introduced into the vacuum container ( The reactive gas may be nitrogen gas or ammonia gas. In this case, the film formed on the surface of the substrate 11 is heat-treated (annealed) in a vacuum, and the hydrogen sulfide-based gas generated by the reaction between hydrogen in the mixed gas G and sulfur in the boron sulfide is the above-mentioned. When the inclusion in the film is eliminated, a BN film preferentially oriented in the C-axis direction can be obtained.

次に、前述したようにして得られたBN皮膜は、三次元半
導体装置の層間の絶縁材料として、有効に作用する。こ
の場合の半導体装置の実施例を第２図から第５図を参照
して説明する。Next, the BN film obtained as described above effectively acts as an insulating material between layers of the three-dimensional semiconductor device. An embodiment of the semiconductor device in this case will be described with reference to FIGS. 2 to 5.

本装置の発明のに係る半導体装置の第１の実施例の構造
の概略を第２図で示す。まず単結晶SiやGap,GaAsなどの
半導体単結晶を、ガラスやセラミックス等の絶縁性の基
板101上に下部半導体層102として形成する。そして、こ
の下部半導体層102に周知の半導体素子形成技術を用い
て半導体素子を作り込んで基体110を形成し保持ホルダ1
0に取り付ける。FIG. 2 shows an outline of the structure of the first embodiment of the semiconductor device according to the invention of the present device. First, a semiconductor single crystal such as single crystal Si, Gap, or GaAs is formed as a lower semiconductor layer 102 on an insulating substrate 101 such as glass or ceramics. Then, a semiconductor element is formed in the lower semiconductor layer 102 using a well-known semiconductor element forming technique to form a base 110, and the holding holder 1 is formed.
Attach to 0.

この半導体素子が形成された下部半導体層102の表面
は、凹凸が形成されているとともに、パッシベーション
用の酸化膜等で被覆されていて、表面がアモルファス状
となっている。The surface of the lower semiconductor layer 102 on which this semiconductor element is formed is uneven, and is covered with an oxide film for passivation, etc., so that the surface is amorphous.

次に、前述した装置において、たとえば加速電極15の加
速電圧Va＝0.5KV,イオン化のための電子電流Ie＝100mA
の蒸着条件に設定し、上記下部半導体層102上にICB法に
より絶縁層そてのBN皮膜116を被着形成する。この形成
されたBN皮膜116は、例えば、下部半導体層102の表面に
半導体素子が作り込まれていて、凹凸が形成され、その
平坦性が失われていても、前述したようにBN皮膜116は
Ｃ軸方向に優先配向して成長する。したがって、このBN
皮膜116の配向性を利用して、その上にさらにイオンビ
ーム蒸着法等により単結晶の上部半導体層103をエピタ
キシャル成長させこの上部半導体層103に半導体素子を
作り込むことで多段積層の三次元薄膜半導体装置が作成
できることになる。Next, in the device described above, for example, the acceleration voltage Va of the acceleration electrode 15 is 0.5 KV, and the electron current Ie for ionization is 100 mA.
Then, the BN film 116 for the insulating layer is formed on the lower semiconductor layer 102 by the ICB method. The formed BN film 116 has, for example, a semiconductor element formed on the surface of the lower semiconductor layer 102, unevenness is formed, and even if the flatness is lost, the BN film 116 is formed as described above. Grow preferentially in the C-axis direction. Therefore, this BN
Utilizing the orientation of the film 116, a single crystal upper semiconductor layer 103 is epitaxially grown on the film 116 by an ion beam deposition method or the like, and a semiconductor element is formed in the upper semiconductor layer 103 to form a multi-layered three-dimensional thin film semiconductor. The device can be created.

次に、第３図は本装置の発明に係る半導体装置の第２の
実施例の構造の概略を示しており、また、第３図に示す
ようにガラスやセラミクス等のアモルファス材料の基板
201上に、上述の蒸着条件でICB法により絶縁層としての
第１のBN皮膜216が被着形成されており、このBN皮膜216
の結晶軸C2は、Ｃ軸（002）に優先配向されている。そ
して、上記第１のBN皮膜216の上面に、ICB法によりこの
BN皮膜216の結晶に規正されてエピタキシャル成長させ
たSi単結晶の下部半導体層202が被着形成されていると
共に、この下部半導体層202の上面には下部半導体層202
の結晶に規正されて第２のBN皮膜226が形成されてお
り、さらに、この第２のBN皮膜226の上には第２のBN皮
膜226の結晶に規正されてICB法によりエピタキシャル成
長させた例えばGaAs単結晶の上部半導体層203が被着形
成されている。この第２の実施例では、アモルファス基
板201の材料として絶縁性、導電性を問わず任意のアモ
ルファス物質を選べる利点がある。Next, FIG. 3 shows the outline of the structure of the second embodiment of the semiconductor device according to the invention of this device, and as shown in FIG. 3, the substrate of an amorphous material such as glass or ceramics.
A first BN film 216 as an insulating layer is deposited and formed on 201 by the ICB method under the above vapor deposition conditions.
The crystal axis C 2 of is preferentially oriented to the C axis (002). Then, on the upper surface of the first BN film 216, by the ICB method,
A lower semiconductor layer 202 of Si single crystal, which is epitaxially grown by being regulated by the crystal of the BN film 216, is deposited and formed, and the lower semiconductor layer 202 is formed on the upper surface of the lower semiconductor layer 202.
The second BN film 226 is formed on the second BN film 226 by being controlled by the crystal of the second BN film 226 and is epitaxially grown by the ICB method on the second BN film 226. An upper semiconductor layer 203 of GaAs single crystal is deposited. The second embodiment has an advantage that any amorphous substance can be selected as the material of the amorphous substrate 201 regardless of its insulating property and conductivity.

第４図にこの構造の概略を示す第３の実施例において、
Si単結晶半導体ウエハ502の表面502a側に集積回路等を
作り込み、この集積回路を作り込んだ半導体、すなわち
表面に凹凸ができているとともに、パッベーション用の
酸化膜等で被覆されていて、表面がアモルファス状とな
っている下部半導体層502の上面にBN皮膜516を前述の実
施例と同様に操作によって被着形成すると共に、このBN
皮膜516上にSi単結晶の上部半導体層503を被着形成し
て、この上部半導体層503にも集積回路等を作り込んだ
構造が可能となる。In a third embodiment, which outlines this structure in FIG.
An integrated circuit or the like is formed on the surface 502a side of the Si single crystal semiconductor wafer 502, and a semiconductor in which this integrated circuit is formed, that is, the surface has irregularities and is covered with an oxide film or the like for passivation, A BN film 516 is formed on the upper surface of the lower semiconductor layer 502 whose surface is amorphous by the same operation as in the above-mentioned embodiment, and the BN film 516 is formed.
A structure in which an upper semiconductor layer 503 made of Si single crystal is deposited on the film 516 and an integrated circuit or the like is formed in this upper semiconductor layer 503 is also possible.

一方、近時半導体集積回路の高集積化にともない、大電
力用の半導体素子、たとえばパワートランジスタ、オー
ディオ用リニアICなどやそれ以外の半導体装置の放熱に
ついえ考慮する必要が生じており、同時に半導体装置の
放熱特性が向上すれば集積度をさら上げることが可能で
ある。On the other hand, with the recent high integration of semiconductor integrated circuits, it has become necessary to consider heat dissipation of semiconductor elements for high power, such as power transistors, linear ICs for audio, and other semiconductor devices. If the heat dissipation characteristics of the device are improved, it is possible to further increase the degree of integration.

そこで、基板上に成長させるBN皮膜を一層とせず、放熱
用の金属膜たとえばAl膜を蒸着してこの金属膜を通して
効率よく熱を外部に放出させたり、あるいはこの金属膜
により多層素子の電磁的な遮へいを行う作用をおたせそ
の上にもう一度BN皮膜を形成しそのBN皮膜の上にさらに
半導体層を形成すれば、高集積、高密度実装された半導
体装置の放熱特性を向上できることから、このような構
造を本装置の発明に係る半導体装置の第４の実施例とし
て第５図を参照して説明する。Therefore, instead of forming a single BN film to be grown on the substrate, a metal film for heat dissipation, such as an Al film, is vapor-deposited to efficiently radiate heat to the outside through this metal film, or this metal film allows the electromagnetic effect of the multilayer device to be reduced. It is possible to improve the heat dissipation characteristics of a highly integrated and high-density mounted semiconductor device by forming a BN film on it and forming a semiconductor layer on the BN film. Such a structure will be described as a fourth embodiment of the semiconductor device according to the present invention with reference to FIG.

第４の実施例では、半導体素子が作り込まれたた下部半
導体層602上に、絶縁層としての第１のBN皮膜616を被着
形成し、この第１のBN皮膜616上に金属材料あるいは磁
性材料からなる放熱板605を被着する。次にこの放熱板6
05上にさらに絶縁層としての第２のBN皮膜626を被着形
成し、この第２のBN皮膜626上に上部半導体層604を形成
した構成となっている。この上物質半導体層604は、下
地の第２のBN皮膜626の配向軸に規正され、結晶性の良
い皮膜となる。したがって、上部半導体層604には集積
回路等が形成できると共に、上部および下部半導体層60
4,602との電気的接続は、上記放熱板605に形成された小
穴606を通挿して設けられる結線607により行われてい
る。In the fourth embodiment, a first BN film 616 as an insulating layer is formed by depositing on the lower semiconductor layer 602 in which a semiconductor element is built, and a metal material or A heat dissipation plate 605 made of a magnetic material is attached. Next, this heat sink 6
A second BN film 626 as an insulating layer is further deposited on 05, and an upper semiconductor layer 604 is formed on the second BN film 626. The upper material semiconductor layer 604 is regulated by the orientation axis of the underlying second BN film 626 and becomes a film having good crystallinity. Therefore, an integrated circuit or the like can be formed on the upper semiconductor layer 604, and the upper and lower semiconductor layers 60 can be formed.
The electrical connection with 4,602 is made by a connection wire 607 provided by inserting a small hole 606 formed in the heat dissipation plate 605.

この実施例において、結晶性のBN皮膜616,626は熱伝導
特性に優れているが、その熱伝導特性に異方性を有す
る。すなわち、後述するが結晶軸と平行方向の熱伝導率
は結晶軸方向と垂直する方向の熱伝導率に比べて３倍ほ
ど優れているので、上部および下部半導体層604,602か
ら放熱板605へ放熱効果を高めることができる。このこ
とから、大量の熱を発するパワートランジスタなどの半
導体装置や高密度実装された半導体装置に絶縁層として
結晶性のBN皮膜を適用すれば効率の良い放熱が行えるこ
とになる。なお、放熱板605として金属材料を用いれば
静電シールド効果が期待でき、また磁性材料を用いれば
磁気シールド効果が期待できることになる。In this example, the crystalline BN coatings 616 and 626 have excellent heat conduction characteristics, but have anisotropic heat conduction characteristics. That is, as will be described later, since the thermal conductivity in the direction parallel to the crystal axis is about three times better than the thermal conductivity in the direction perpendicular to the crystal axis direction, the heat dissipation effect from the upper and lower semiconductor layers 604, 602 to the heat dissipation plate 605 is achieved. Can be increased. Therefore, if a crystalline BN film is applied as an insulating layer to a semiconductor device such as a power transistor that emits a large amount of heat or a semiconductor device that is densely packaged, efficient heat dissipation can be performed. If a metal material is used for the heat dissipation plate 605, an electrostatic shield effect can be expected, and if a magnetic material is used, a magnetic shield effect can be expected.

ところで、上述した本装置の発明に係る半導体装置の各
実施例においては、BN皮膜の形成を上述した本発明者ら
が提案しているICB法により行なうのが最も優れてお
り、良質のBN皮膜あるいは半導体層を形成できる。すな
わち、このICB法は、形成されたクラスタが基板に射突
した際に個々の原子に分かれて基板表面を拡散する表面
マイグレーション効果、クラスタや個々の原子の含まれ
るイオンが皮膜形成の初期段階において成長核の形成や
核の凝集に有効に作用する効果、あるいはほう素の蒸気
流ないしクラスタのもつ運動エネルギーによる表面洗浄
効果や、イオン注入効果などにより、結晶学的に良質
で、また少なくとも表面がアモルファス状である基体に
対する付着力が強く、表面平坦性の良い皮膜の形成が可
能となるものである。またこのICB法では、皮膜形成条
件、例えばるつぼ内外の圧力差、イオン化室でのプラス
イオン化の程度、あるいは加速電界の有無やその程度な
ど、皮膜形成時の自由度が高く、結晶構造の制御が容易
であって、必要とする特性に応じて結晶性の良いBN皮膜
の作製が可能になる利点がある。By the way, in each of the embodiments of the semiconductor device according to the invention of the present device described above, it is the best to perform the formation of the BN film by the ICB method proposed by the above-mentioned inventors. Alternatively, a semiconductor layer can be formed. That is, this ICB method has a surface migration effect in which the formed clusters are divided into individual atoms and diffuse on the surface of the substrate when the clusters hit the substrate, and the ions containing the clusters and individual atoms are formed in the initial stage of film formation. The crystallographic quality is good and at least the surface is good because of the effect of effectively acting on the formation of growth nuclei and the aggregation of nuclei, the surface cleaning effect by the kinetic energy of boron vapor flow or clusters, and the ion implantation effect. It has a strong adhesive force to an amorphous substrate and enables the formation of a film having good surface flatness. In addition, in this ICB method, the degree of freedom in forming a film is high and the crystal structure can be controlled, such as film forming conditions such as the pressure difference between the inside and the outside of the crucible, the degree of positive ionization in the ionization chamber, and the presence or absence of an accelerating electric field. There is an advantage that it is easy and a BN film having good crystallinity can be produced according to the required characteristics.

また、上述した各実施例において、Ｃ軸方向に優先配向
したBN皮膜形成時の基本温度は、室温温度から500〜600
℃程度に設定すればよい。したがって、既に作り込まれ
ている半導体素子の不純物濃度をくずすおそれはなく、
この点からも三次元素子を作る上で有利である。Further, in each of the above-described examples, the basic temperature at the time of forming the BN film preferentially oriented in the C-axis direction is 500 to 600 from room temperature.
It may be set to about ℃. Therefore, there is no danger of destroying the impurity concentration of the already built semiconductor element,
From this point as well, it is advantageous in producing a three-dimensional element.

次に、本発明者らが製造したBN皮膜について実験結果の
一例を第６図から第８図に示す。Next, an example of the experimental results of the BN film manufactured by the present inventors is shown in FIGS. 6 to 8.

第６図は、蒸着条件として加速電極の加速電圧Va＝0.5K
V,イオン化のための電子電流Ie＝100mAに設定して、ICB
法により上記実施例に示すように基材としてのSi単結晶
半導体上にBN皮膜を形成した場合のBN皮膜のＸ線回折図
を示しており、横軸にＸ線反射角２θがとられている。FIG. 6 shows the acceleration voltage Va = 0.5K of the acceleration electrode as vapor deposition conditions.
V, electron current for ionization Ie = 100mA, ICB
The X-ray diffraction diagram of the BN film when the BN film is formed on the Si single crystal semiconductor as the base material by the method as shown in the above example is shown, and the X-ray reflection angle 2θ is taken on the horizontal axis. There is.

この図では、Ｘ線反射角２θが12.0°の値の位置に、ウ
ルツァイト鉱形（六方晶系）の結晶構造を有するBN皮膜
のＣ軸方向（002）から強い反射ピークが現れている。
このことから形成されたBN皮膜は、アモルファスでなく
Ｃ軸方向（002）の特性結晶軸方位に優先的に配向され
ていることが明らかである。In this figure, at the position where the X-ray reflection angle 2θ is 12.0 °, a strong reflection peak appears from the C-axis direction (002) of the BN coating having the wurtzite ore (hexagonal) crystal structure.
From this, it is clear that the BN film formed is not amorphous but is preferentially oriented in the characteristic crystal axis direction in the C-axis direction (002).

また図示しないが、ガラス（アモルファス）より成る基
体上に形成したBN皮膜のＸ線回折における実験結果で
は、同一蒸着条件において上記Si単結晶半導体層上に形
成したBN皮膜のそれと比べて、BN（002）の反射ピーク
はやや小さかったが、アモルファスであるガラス上でも
Ｃ軸方向（002）に優先配向してBN皮膜が形成されるこ
とが明らかとなった。Although not shown, the experimental results in X-ray diffraction of the BN film formed on the substrate made of glass (amorphous) show that BN (compared to that of the BN film formed on the Si single crystal semiconductor layer under the same vapor deposition conditions). Although the reflection peak of (002) was slightly small, it was revealed that the BN film was formed with preferential orientation in the C-axis direction (002) even on amorphous glass.

さらに、Si単結晶半導体層とBN皮膜の格子定数のミスフ
ィット（格子不整）は5.9％と小さく、Ｃ軸方向に優先
配向したBN皮膜上にSiを成長させた場合、この結晶軸を
結晶成長の核としてSi皮膜がほぼ完全にかつ容易にエピ
タシャル成長して、半導体素子を作り込むに足る単結晶
皮膜となっていることが判る。Furthermore, the misfit (lattice irregularity) of the lattice constant between the Si single crystal semiconductor layer and the BN film is as small as 5.9%, and when Si is grown on the BN film preferentially oriented in the C-axis direction, this crystal axis causes crystal growth. It can be seen that the Si film grows almost completely and easily as the nucleus of the, and becomes a single crystal film sufficient for manufacturing a semiconductor element.

一方、第６図と同じ蒸着条件で、アモルファス物質であ
るガラス基板上の形成したBN皮膜の赤外反射分光特性の
測定結果は、酸素原子と水素原子、あるいは窒素原子と
水素原子の結合の伸縮振動によるピークや、酸素原子と
ほう素原子の結合の伸縮振動によるピークも出てはいる
が、波数1380cm-1付近に、窒素原子とほう素原子の結合
の伸縮振動によるピークがみられる。しかも、このピー
クは比較的半値幅の狭いピークとなっている。これによ
り、多少水素や酸素、あるいはこれらの結合したものが
含まれているとはいえ、結晶学的に良好なBN皮膜が形成
されていることがわかる。On the other hand, under the same vapor deposition conditions as in FIG. 6, the measurement results of the infrared reflection spectral characteristics of the BN film formed on the glass substrate which is an amorphous substance are the expansion and contraction of the bond between oxygen atom and hydrogen atom, or nitrogen atom and hydrogen atom. Although there are peaks due to vibrations and stretching vibrations of the bond between the oxygen atom and the boron atom, peaks due to the stretching vibration of the bond between the nitrogen atom and the boron atom can be seen near the wave number of 1380 cm -1 . Moreover, this peak has a relatively narrow half width. As a result, it can be seen that a BN film that is crystallographically favorable is formed although it contains some hydrogen, oxygen, or a combination thereof.

次に第７図は、第６図と同じ蒸着条件で基体上に形成さ
れたBN皮膜の室温（Ｔ＝300K）付近での導電率の測定結
果図であり、横軸には100/Tが、または縦軸には導電率
（CONDUCTIVITY）がとられている。Next, FIG. 7 is a measurement result diagram of the electrical conductivity of the BN film formed on the substrate under the same vapor deposition conditions as in FIG. 6 at room temperature (T = 300 K), and 100 / T is plotted on the horizontal axis. , Or the vertical axis indicates the conductivity (CONDUCTIVITY).

この図において、BN皮膜の導電率は約10-9Ω−１・cm-1
から10-11Ω−１・cm-1と極めて小さい値の範囲にあ
り、このことから形成されたBN皮膜は電気的に絶縁性を
示すことが明らかである。したがって、BN皮膜をたとえ
ば集積化ずみの半導体集積回路層間に挟み込んで形成す
るような第２図から第５図に示した実施例において、た
とえBN皮膜が薄くとも各層を電気的に確実に絶縁分離す
ることができることになる。In this figure, the conductivity of the BN film is about 10 -9 Ω -1 · cm -1
To 10 −11 Ω −1 · cm −1, which is an extremely small value, and it is clear that the BN film formed from this shows electrically insulating properties. Therefore, in the embodiment shown in FIGS. 2 to 5 in which the BN film is formed by sandwiching it between the integrated semiconductor integrated circuit layers, for example, even if the BN film is thin, each layer is electrically and reliably isolated. You will be able to do it.

次に、第６図、第７図と同じ蒸着条件で、ガラス（アモ
ルファス）上に形成されたＣ軸優先配向のBN皮膜の熱伝
導率を熱パルス法で測定した結果について述べる。この
場合、BN皮膜は、その厚みがミクロンオーダの薄膜状で
与えられているので、それ自体の熱伝導率を測定するこ
とはむずかしいが、ガラス基板上のBN皮膜については、
その面方向（成長軸と垂直方向）でステンレス鋼並の0.
116W/cm・degという効果が得られた。一方結晶性の皮膜
では、成長軸方向の熱伝導率は、垂直方向のそれに比べ
て約３倍程度はよくなることが知られている。Next, the results of measuring the thermal conductivity of the C-axis preferentially oriented BN film formed on glass (amorphous) by the heat pulse method under the same vapor deposition conditions as in FIGS. 6 and 7 will be described. In this case, since the BN film is given in the form of a thin film of micron order, it is difficult to measure the thermal conductivity of itself, but for the BN film on the glass substrate,
Its surface direction (direction perpendicular to the growth axis) is as high as that of stainless steel.
The effect of 116 W / cm · deg was obtained. On the other hand, it is known that the thermal conductivity of a crystalline film in the growth axis direction is about 3 times better than that in the vertical direction.

したがって、第５図に示した実施例の様な場合と同様
に、第８図に示すように半導体層600に対して、半導体
層600の放熱方向に沿ってBN皮膜700が特定軸（Ｃ軸）配
向するように被着形成し、このBN皮膜700に放熱板800を
形成すれば、半導体600の発熱を放熱板800側に極めて良
好に伝導して放熱できるので、パワートランジスタなど
の大電力用半導体装置の放熱効果を高めることができる
と共に装置の集積化および高密度実装を可能にする。Therefore, as in the case of the embodiment shown in FIG. 5, as shown in FIG. 8, with respect to the semiconductor layer 600, the BN film 700 has a specific axis (C-axis) along the heat radiation direction of the semiconductor layer 600. ) If the BN coating 700 is formed so as to be oriented, and the heat sink 800 is formed on this BN film 700, the heat generated by the semiconductor 600 can be conducted to the heat sink 800 side very well and dissipated. The heat dissipation effect of the semiconductor device can be enhanced, and the device can be integrated and high-density mounted.

なお、本装置の発明に係る半導体装置の実施例は、発明
の要旨を変更しない範囲の変更例を含むことは勿論であ
る。It is needless to say that the embodiments of the semiconductor device according to the invention of the present device include modified examples within a range not changing the gist of the invention.

「発明の効果」 本装置に係る発明は、アモルファス基体として安価なガ
ラスを使用できるという効果を生じる。"Effects of the Invention" The invention according to the present device brings about an effect that inexpensive glass can be used as an amorphous substrate.

また、本装置に係る発明では、その層間絶縁層としての
BN皮膜は、Ｃ軸方向（200）に優先配向しており、この
Ｃ軸方向では、従来のアモルファスBN皮膜に比べて少な
くとも３倍程度の熱伝導率が得られることから、金属材
料などで成るヒートシンクとしての放熱板と半導体層と
の間に介在させると、高い電気的絶縁性を維持した状態
で、ヒートシンクとしての放熱性にすぐれた放熱性をも
たせることができ、したがって、大量の熱を発生する大
電力用半導体装置に使用すれば、高密度実装の大電力用
半導体装置が得られという効果を生じる。Further, in the invention according to the present device, as the interlayer insulating layer,
The BN film is preferentially oriented in the C-axis direction (200), and in this C-axis direction, a thermal conductivity of at least 3 times that of a conventional amorphous BN film can be obtained. By interposing it between the heat dissipation plate as a heat sink and the semiconductor layer, it is possible to provide excellent heat dissipation as a heat sink while maintaining high electrical insulation, thus generating a large amount of heat. When used in a high-power semiconductor device, a high-density packaging high-power semiconductor device can be obtained.

本方法に係る発明は、500〜600℃程度の比較的低い基本
の温度でＣ軸方向に優先したBN皮膜形成ができることか
ら、既に作り込まれている半導体素子の不純物プロファ
イルをくずすおそれがなく、かつ、基本に対するBN皮膜
の付着力が強く、また表面平坦性が良いBN皮膜が得られ
るという効果も生じる。Since the invention according to this method can form a BN film preferentially in the C-axis direction at a relatively low basic temperature of about 500 to 600 ° C., there is no fear of destroying the impurity profile of a semiconductor element that has already been formed, In addition, the BN film has a strong adhesion to the base, and the BN film having good surface flatness can be obtained.

【図面の簡単な説明】[Brief description of drawings]

第１図は、本方法の発明に係る半導体装置に必要される
Ｃ軸方向に優先配向したBN皮膜の製造方法のための装置
の構造を示す図、第２図から第５図は、本装置の発明に
係る半導体装置の第１の実施例から第４の実施例を説明
するための断面図、第６図は、Si単結晶半導体層上に形
成された窒化ほう素皮膜のＸ線回折図、第７図は、窒化
ほう素皮膜の室温付近での導電率の測定結果、第８図
は、さらに異なる本発明の半導体装置の他の実施例を示
す説明図である。 １…るつぼ、２…一個または複数個のノズル、３…ほう
化化合物としての酸化ほう素、3a…酸化ほう素の蒸気、
3b…ほう素の蒸気流（ないしクラスタ）、11…基本、16
…窒素ほう素皮膜、102…基本としての下層半導体層、3
02…下層半導体層、502,602,604…基体としてのSiデバ
イス、605…放熱板、116,316,516,616,626…絶縁層とし
てのＣ軸方向に優先配向した窒化ほう素皮膜、103,303,
503…上層半導体層。FIG. 1 is a diagram showing the structure of an apparatus for manufacturing a BN film preferentially oriented in the C-axis direction required for a semiconductor device according to the present invention, and FIGS. 6 is a cross-sectional view for explaining the first to fourth embodiments of the semiconductor device according to the invention of FIG. 6, and FIG. 6 is an X-ray diffraction diagram of a boron nitride film formed on a Si single crystal semiconductor layer. FIG. 7 is a measurement result of conductivity of a boron nitride film near room temperature, and FIG. 8 is an explanatory view showing another embodiment of the semiconductor device of the present invention which is different. 1 ... Crucible, 2 ... One or more nozzles, 3 ... Boron oxide as a boride compound, 3a ... Boron oxide vapor,
3b ... Boron vapor flow (or cluster), 11 ... Basic, 16
… Nitrogen boron film, 102… Basic lower semiconductor layer, 3
02 ... Lower semiconductor layer, 502, 602, 604 ... Si device as a substrate, 605 ... Heat sink, 116, 316, 516, 616, 626 ... Boron nitride film preferentially oriented in the C-axis direction as an insulating layer, 103, 303,
503 ... Upper semiconductor layer.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 27/00 ３０１ Ｄ Ｈ // Ｃ３０Ｂ 29/38 Ａ 8216−4Ｇ Ｈ０１Ｌ 23/36 23/373 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI Technical indication location H01L 27/00 301 DH // C30B 29/38 A 8216-4G H01L 23/36 23/373

Claims (4)

【特許請求の範囲】[Claims] 【請求項１】少なくとも表面がアモルファス状である基
体とこれに積層される半導体層との間に、層間絶縁層が
介在した構造の半導体装置において、前記層間絶縁層
は、前記基体表面上にＣ軸優先配向した窒化ほう素皮膜
からなる、半導体装置。1. A semiconductor device having a structure in which an interlayer insulating layer is interposed between a substrate having at least an amorphous surface and a semiconductor layer laminated on the substrate, wherein the interlayer insulating layer is C on the surface of the substrate. A semiconductor device comprising a boron nitride film oriented in the axis-preferred manner. 【請求項２】前記基体はアモルファス物質とされた特許
請求の範囲第１項記載の半導体装置。2. The semiconductor device according to claim 1, wherein the base is an amorphous material. 【請求項３】一個又は複数個のノズルを有する密閉形の
るつぼ内に充填した酸化ほう素又は硫化ほう素をその蒸
気温度以上に加熱して蒸気化し、ほう素の蒸気を10-2To
rr以下の圧力を有する窒素又はアンモニアと水素との混
合ガス雰囲気中に前記ノズルから噴出させてクラスタを
形成させ、少なくともほう素のクラスタ及び窒素又はア
ンモニアと水素との混合ガスのそれぞれの一部に電子を
射突させてイオン化し、この少なくとも一部がイオン化
されたほう素のクラスタを窒素とともに、少なくとも表
面がアモルファス状である基体表面に射突させて皮膜を
形成し、然る後、該皮膜を真空中で熱処理して該基体表
面にＣ軸優先配向した窒化ほう素皮膜を形成する工程
と、前記窒化ほう素皮膜上に半導体層をエピタキシャル
成長させる工程とを備えてなる、半導体装置の製造方
法。3. Boron oxide or boron sulfide filled in a closed crucible having one or a plurality of nozzles is heated above its vapor temperature to be vaporized, and the vapor of boron is reduced to 10 -2 To.
A cluster is formed by ejecting from the nozzle into a mixed gas atmosphere of nitrogen or ammonia and hydrogen having a pressure of rr or less, and at least a part of each of the boron cluster and the mixed gas of nitrogen or ammonia and hydrogen is formed. An electron is bombarded to be ionized, and at least a part of this ionized boron cluster is bombarded with nitrogen onto the surface of the substrate whose surface is at least amorphous to form a film, and then the film is formed. A method for manufacturing a semiconductor device, comprising the steps of: heat treating in a vacuum to form a C-axis preferentially oriented boron nitride film on the surface of the substrate; and epitaxially growing a semiconductor layer on the boron nitride film. . 【請求項４】前記基体がアモルファス物質である特許請
求の範囲第３項記載の半導体装置の製造方法。4. The method of manufacturing a semiconductor device according to claim 3, wherein the substrate is an amorphous substance.
JP58030792A 1983-02-28 1983-02-28 Semiconductor device and manufacturing method thereof Expired - Lifetime JPH06105779B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP58030792A JPH06105779B2 (en) 1983-02-28 1983-02-28 Semiconductor device and manufacturing method thereof
US06/584,403 US4565741A (en) 1983-02-28 1984-02-28 Boron nitride film and process for preparing same
US06/778,872 US4622236A (en) 1983-02-28 1985-09-23 Boron nitride film and process for preparing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58030792A JPH06105779B2 (en) 1983-02-28 1983-02-28 Semiconductor device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPS59156998A JPS59156998A (en) 1984-09-06
JPH06105779B2 true JPH06105779B2 (en) 1994-12-21

Family

ID=12313525

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58030792A Expired - Lifetime JPH06105779B2 (en) 1983-02-28 1983-02-28 Semiconductor device and manufacturing method thereof

Country Status (2)

Country Link
US (2) US4565741A (en)
JP (1) JPH06105779B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010034254A (en) * 2008-07-29 2010-02-12 Mitsubishi Chemicals Corp Three-dimensional large-scale integrated circuit (lsi)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6353259A (en) * 1986-08-22 1988-03-07 Mitsubishi Electric Corp Method for forming thin film
US4851255A (en) * 1986-12-29 1989-07-25 Air Products And Chemicals, Inc. Ion implant using tetrafluoroborate
US5277939A (en) * 1987-02-10 1994-01-11 Semiconductor Energy Laboratory Co., Ltd. ECR CVD method for forming BN films
US4868093A (en) * 1987-05-01 1989-09-19 American Telephone And Telegraph Company, At&T Bell Laboratories Device fabrication by X-ray lithography utilizing stable boron nitride mask
FR2616272B1 (en) * 1987-06-02 1990-10-26 Thomson Csf SEMICONDUCTOR MATERIAL DEVICE MADE ON A DIFFERENT MESH PARAMETER SUBSTRATE, APPLICATION TO A LASER AND METHOD FOR PRODUCING THE SAME
JP2501828B2 (en) * 1987-06-09 1996-05-29 三菱電機株式会社 Thin film deposition equipment
US4960072A (en) * 1987-08-05 1990-10-02 Ricoh Company, Ltd. Apparatus for forming a thin film
US4854263B1 (en) * 1987-08-14 1997-06-17 Applied Materials Inc Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films
JPH02192494A (en) * 1989-01-20 1990-07-30 Sumitomo Electric Ind Ltd Composite material
US4957773A (en) * 1989-02-13 1990-09-18 Syracuse University Deposition of boron-containing films from decaborane
JP2619068B2 (en) * 1989-09-08 1997-06-11 三菱電機株式会社 Thin film forming equipment
US5227318A (en) * 1989-12-06 1993-07-13 General Motors Corporation Method of making a cubic boron nitride bipolar transistor
US5264296A (en) * 1989-12-06 1993-11-23 General Motors Corporation Laser depositon of crystalline boron nitride films
US5139591A (en) * 1989-12-06 1992-08-18 General Motors Corporation Laser deposition of crystalline boron nitride films
US5330611A (en) * 1989-12-06 1994-07-19 General Motors Corporation Cubic boron nitride carbide films
AU632869B2 (en) * 1989-12-14 1993-01-14 Minnesota Mining And Manufacturing Company Fluorocarbon-based coating compositions and articles derived therefrom
JP2786283B2 (en) * 1989-12-22 1998-08-13 株式会社日立製作所 Surface modification method and apparatus, and surface modified substrate
US5232862A (en) * 1990-07-16 1993-08-03 General Motors Corporation Method of fabricating a transistor having a cubic boron nitride layer
KR0126457B1 (en) * 1992-01-08 1997-12-26 기타오카 다카시 Large scale integrated circuit device and thin film forming method and apparatus for the same
US5518780A (en) * 1994-06-16 1996-05-21 Ford Motor Company Method of making hard, transparent amorphous hydrogenated boron nitride films
US6200649B1 (en) 1999-07-21 2001-03-13 Southwest Research Institute Method of making titanium boronitride coatings using ion beam assisted deposition
US6100587A (en) 1999-08-26 2000-08-08 Lucent Technologies Inc. Silicon carbide barrier layers for porous low dielectric constant materials
US6878420B2 (en) * 2001-03-12 2005-04-12 Lucent Technologies Inc. MgB2 superconductors

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3063858A (en) * 1959-07-22 1962-11-13 Nat Res Corp Vapor source and processes for vaporizing iron, nickel and copper
US3564565A (en) * 1964-05-05 1971-02-16 Texas Instruments Inc Process for adherently applying boron nitride to copper and article of manufacture
GB1104935A (en) * 1964-05-08 1968-03-06 Standard Telephones Cables Ltd Improvements in or relating to a method of forming a layer of an inorganic compound
US3922475A (en) * 1970-06-22 1975-11-25 Rockwell International Corp Process for producing nitride films
US3692566A (en) * 1970-11-24 1972-09-19 Us Army Method of depositing isotropic boron nitride
US3825440A (en) * 1971-07-01 1974-07-23 Us Army Vapor deposition method
US4096297A (en) * 1973-11-19 1978-06-20 Raytheon Company Isotropic boron nitride and method of making same
DE2441260B2 (en) * 1974-08-28 1976-12-02 Laboratoire Suisse de Recherches Horlogeres, Neuenburg (Schweiz); Gutehoffnungshütte Sterkrade AG, 4200 Oberhausen METHOD OF PRODUCING A LAYER ACTING AS A RELEASE AGENT AND DIFFUSION BARRIER
GB1483966A (en) * 1974-10-23 1977-08-24 Sharp Kk Vapourized-metal cluster ion source and ionized-cluster beam deposition
JPS523583A (en) * 1975-06-27 1977-01-12 Toshinori Takagi Crystal film forming process
DE2631881C2 (en) * 1975-07-18 1982-11-25 Futaba Denshi Kogyo K.K., Mobara, Chiba Method for manufacturing a semiconductor component
JPS5283084A (en) * 1975-12-30 1977-07-11 Futaba Denshi Kogyo Kk Pn junction solid state element and method of producing same
JPS5440075A (en) * 1977-09-06 1979-03-28 Futaba Denshi Kogyo Kk Compound semiconductor wafer
JPS566333A (en) * 1979-06-28 1981-01-22 Nissin Electric Co Ltd Device for operating breaker
US4415420A (en) * 1983-02-07 1983-11-15 Applied Coatings International, Inc. Cubic boron nitride preparation
US4412899A (en) * 1983-02-07 1983-11-01 Applied Coatings International, Inc. Cubic boron nitride preparation utilizing nitrogen gas

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
応用物理，４６〔２〕（１９７７）Ｐ．１２０〜１２２

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010034254A (en) * 2008-07-29 2010-02-12 Mitsubishi Chemicals Corp Three-dimensional large-scale integrated circuit (lsi)

Also Published As

Publication number Publication date
JPS59156998A (en) 1984-09-06
US4622236A (en) 1986-11-11
US4565741A (en) 1986-01-21

Similar Documents

Publication Publication Date Title
JPH06105779B2 (en) Semiconductor device and manufacturing method thereof
JPS58158944A (en) Semiconductor device
US4451499A (en) Method for producing a beryllium oxide film
EP0301463A2 (en) Thin film silicon semiconductor device and process for producing it
US4828870A (en) Method of forming a thin aluminum film
JPS5919190B2 (en) Manufacturing method of lead film
JPH0259862B2 (en)
JPH0545670B2 (en)
Nakamura et al. Synthesis of aluminium nitride thin films by ion-vapour deposition method
Takagi Ionized-Cluster Beam Deposition and Epitaxy
JPS5912015B2 (en) semiconductor equipment
JPS6134173A (en) Production of high-hardness boron nitride film
JPH05117088A (en) Method for forming n-type and p-type diamond
JPH05238880A (en) Method for epitaxial growth
JP3007579B2 (en) Manufacturing method of silicon thin film
JP3550665B2 (en) Method for producing silicon carbide thin film
JPH01103857A (en) Semiconductor device
JP3102540B2 (en) Method for forming low hydrogen content amorphous silicon semiconductor thin film
JPS606091B2 (en) semiconductor equipment
JP2716715B2 (en) Thin film forming equipment
Harada et al. Formation of β-FeSi2 thin films by partially ionized vapor deposition
JP2594949B2 (en) Thin film forming equipment
JPH01194373A (en) Thermoelectrical conversion material
JPH03134164A (en) Thin film forming device and formation of superconducting thin film by using this device
Lu Partially Ionized Beam Deposition of Thin Films