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JPH05190650A - Semiconductor substrate - Google Patents

Semiconductor substrate

Info

Publication number
JPH05190650A
JPH05190650A JP1937892A JP1937892A JPH05190650A JP H05190650 A JPH05190650 A JP H05190650A JP 1937892 A JP1937892 A JP 1937892A JP 1937892 A JP1937892 A JP 1937892A JP H05190650 A JPH05190650 A JP H05190650A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
substrate
semiconductor
foreign matter
recess
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1937892A
Other languages
Japanese (ja)
Inventor
Toshiya Hashiguchi
俊哉 橋口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP1937892A priority Critical patent/JPH05190650A/en
Publication of JPH05190650A publication Critical patent/JPH05190650A/en
Pending legal-status Critical Current

Links

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PURPOSE:To prevent a foreign matter from affecting a following process for bad even if it is produced by rubbing between a substrate contact part of a substrate carrier device and a semiconductor substrate when the semiconductor substrate is carried by a substrate carrier device by providing a recessed part to a rear of the semiconductor substrate. CONSTITUTION:Both sides of a semiconductor substrate 10 are finished flat. A rear 12 is provided with disc-like recessed parts 14 on the same circumference, desirably at specified three positions to an orientation flat 18 of the semiconductor substrate 10. Thereby, even if the semiconductor substrate 10 and the substrate carrier device are rubbed and a foreign matter is produced, the foreign matter gathers in a recessed part 14 and does not attach to a front or a rear of the semiconductor substrate. Therefore, a foreign matter does not affect smoothness of the semiconductor device for bad even if it is mounted on an exposure device and a good pattern can be formed in the semiconductor device.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体基板の改良に関
する。
FIELD OF THE INVENTION The present invention relates to improvements in semiconductor substrates.

【0002】[0002]

【従来の技術】従来の半導体基板は、平坦な表面及び裏
面の両面を有している。そして、半導体基板を機械的に
搬送する場合、半導体基板を基板搬送装置によって支持
して搬送する。この場合、半導体素子を形成する半導体
基板の表面と基板搬送装置とを接触させず、半導体素子
を形成しない半導体基板の裏面と基板搬送装置とを接触
させる。基板搬送装置には、凸部やピン等の基板支持部
分が設けられており、かかる基板支持部分と半導体基板
の裏面とが接触する。
2. Description of the Related Art A conventional semiconductor substrate has both a flat surface and a back surface. When the semiconductor substrate is mechanically transported, the semiconductor substrate is supported and transported by the substrate transport device. In this case, the front surface of the semiconductor substrate on which the semiconductor element is formed is not in contact with the substrate transfer device, and the back surface of the semiconductor substrate on which the semiconductor element is not formed is in contact with the substrate transfer device. The substrate transfer device is provided with a substrate supporting portion such as a convex portion or a pin, and the substrate supporting portion comes into contact with the back surface of the semiconductor substrate.

【0003】[0003]

【発明が解決しようとする課題】半導体基板を基板搬送
装置によって搬送する際、基板搬送装置の基板接触部分
と半導体基板とが擦れる。そして、どちらか(多くの場
合、半導体基板)が削られることがあり、削られた微小
片の異物は半導体基板の表面あるいは裏面に付着する場
合がある。このような半導体基板を例えば露光装置に装
着すると、付着した異物が半導体基板の平滑性を損な
い、その結果、露光時、焦点ずれが発生し、パターン形
成不良を生じるという問題がある。
When a semiconductor substrate is transported by the substrate transport device, the substrate contact portion of the substrate transport device and the semiconductor substrate rub against each other. Then, either one (in many cases, the semiconductor substrate) may be scraped, and the scraped fine particles may adhere to the front surface or the back surface of the semiconductor substrate. When such a semiconductor substrate is mounted on, for example, an exposure apparatus, the adhered foreign matter impairs the smoothness of the semiconductor substrate, and as a result, there is a problem in that defocusing occurs during exposure, resulting in defective pattern formation.

【0004】従って、本発明の目的は、半導体基板を基
板搬送装置にて搬送する際、たとえ基板搬送装置の基板
接触部分と半導体基板との擦れによって異物が生成して
も、生成した異物が後の工程に悪影響を与えることのな
いような半導体基板を提供することにある。
Therefore, an object of the present invention is to convey a semiconductor substrate by a substrate transfer device even if the foreign substance is generated due to the rubbing between the substrate contact portion of the substrate transfer device and the semiconductor substrate. The object is to provide a semiconductor substrate that does not adversely affect the process.

【0005】[0005]

【課題を解決するための手段】上記の目的は、平坦な両
面を有し、且つ基板搬送装置と接触する裏面の一部分に
凹部が設けられていることを特徴とする本発明の半導体
基板によって達成することができる。
The above object is achieved by a semiconductor substrate according to the present invention, which is characterized in that it has flat both sides and that a recess is provided in a part of the back surface which comes into contact with the substrate transfer device. can do.

【0006】凹部は、基板搬送装置に設けられた基板支
持部分の形状に適合した任意の形状とすることができ、
例えば、環状、複数の箇所に設けられた円状、矩形状等
とすることができる。半導体基板の裏面における凹部を
設けるべき位置は、基板搬送装置に設けられた基板支持
部分の位置に依存する。凹部の深さは、発生し得る異物
の大きさ、及び半導体基板の機械的強度に依存するが、
例えば2〜10μmとすることができる。
The recess may have any shape that matches the shape of the substrate supporting portion provided on the substrate transfer device.
For example, it may have an annular shape, a circular shape provided at a plurality of locations, a rectangular shape, or the like. The position on the back surface of the semiconductor substrate where the recess is to be formed depends on the position of the substrate supporting portion provided on the substrate transfer device. The depth of the recess depends on the size of foreign matter that can occur and the mechanical strength of the semiconductor substrate,
For example, it can be 2 to 10 μm.

【0007】[0007]

【作用】本発明の半導体基板は、基板搬送装置と接触す
る裏面の一部分に凹部が設けられている。それ故、基板
搬送装置と半導体基板の凹部の部分とが擦れ、例えば半
導体基板が削られることによって生成する異物は、かか
る凹部の底部に留まり、半導体基板の表面や裏面に付着
することがない。それ故、このような異物が、例えば露
光工程のような後の工程に悪影響を与えることを防止す
ることができる。
In the semiconductor substrate of the present invention, a recess is provided in a part of the back surface which comes into contact with the substrate transfer device. Therefore, a foreign substance generated by rubbing the substrate transfer device and the recessed portion of the semiconductor substrate, for example, by scraping the semiconductor substrate, remains at the bottom of the recessed portion and does not adhere to the front surface or the back surface of the semiconductor substrate. Therefore, it is possible to prevent such foreign matter from adversely affecting the subsequent steps such as the exposure step.

【0008】[0008]

【実施例】以下、本発明の半導体基板を、図面を参照し
て実施例に基づき説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The semiconductor substrate of the present invention will be described below based on embodiments with reference to the drawings.

【0009】図1に、本発明の第1の実施例に関する半
導体基板を裏面側から見た斜視図を示す。両面を平坦に
仕上げた半導体基板10として、直径200mm、厚さ
725μmのものを使用した。半導体基板10の裏面1
2には、円形の凹部14が同一円周上に、望ましくは半
導体基板10のオリエンテーションフラット18に対し
て所定の位置に3カ所設けられている。凹部14の直径
を20mm、深さを10μmとした。この程度の深さな
らば、半導体基板の機械的強度を低下させることがな
い。また、異物の大きさに比べて十分な深さである。
FIG. 1 is a perspective view of a semiconductor substrate according to the first embodiment of the present invention as viewed from the back side. As the semiconductor substrate 10 whose both surfaces were finished flat, one having a diameter of 200 mm and a thickness of 725 μm was used. Backside 1 of semiconductor substrate 10
In FIG. 2, circular recesses 14 are provided on the same circumference, preferably at three predetermined positions with respect to the orientation flat 18 of the semiconductor substrate 10. The recess 14 had a diameter of 20 mm and a depth of 10 μm. With such a depth, the mechanical strength of the semiconductor substrate is not reduced. In addition, the depth is sufficient compared to the size of the foreign matter.

【0010】凹部は公知の方法にて形成することができ
る。例えば、砥石を用いて形成することができる。ある
いは又、ウエハプロセス前に、半導体基板の裏面上にパ
ターニングされたフォトレジストを形成し、フッ酸と硝
酸の混合液を用いて半導体基板の裏面をエッチングする
ことによって形成することができる。
The recess can be formed by a known method. For example, it can be formed using a grindstone. Alternatively, it can be formed by forming a patterned photoresist on the back surface of the semiconductor substrate and etching the back surface of the semiconductor substrate using a mixed solution of hydrofluoric acid and nitric acid before the wafer process.

【0011】こうして形成した凹部14の底部16と、
例えば3本のピンから成る基板搬送装置の基板支持部分
とを接触した状態で、半導体基板10を搬送することが
できる。
A bottom portion 16 of the recess 14 thus formed,
For example, the semiconductor substrate 10 can be transported in a state of being in contact with the substrate supporting portion of the substrate transporting device including three pins.

【0012】図2に、本発明の第2の実施例に関する半
導体基板を裏面側から見た斜視図を示す。使用した半導
体基板は図1に示した半導体基板と同じである。半導体
基板10の裏面12の外周には、環状の凹部24が設け
られている。環状の凹部24の直径方向の幅を20m
m、深さを10μmとした。かかる凹部の形成は、実施
例1と同様の方法で形成することができる。
FIG. 2 is a perspective view of the semiconductor substrate according to the second embodiment of the present invention viewed from the back surface side. The semiconductor substrate used is the same as the semiconductor substrate shown in FIG. An annular recess 24 is provided on the outer periphery of the back surface 12 of the semiconductor substrate 10. The width of the annular recess 24 in the diameter direction is 20 m.
m and the depth was 10 μm. The recess can be formed by the same method as in the first embodiment.

【0013】こうして形成した凹部24の底部26を、
例えば3本〜4本のピンから成る基板搬送装置の基板支
持部分に接触させた状態で、半導体基板10を搬送する
ことができる。実施例2に示す凹部の形状は、半導体基
板と基板搬送装置の基板支持部分との位置関係に依存せ
ずに、基板支持部分と半導体基板の裏面とを接触させる
ことができるので、実施例1に図示した凹部よりも好ま
しい形状である。
The bottom portion 26 of the recess 24 thus formed is
For example, the semiconductor substrate 10 can be transported in a state of being in contact with the substrate supporting portion of the substrate transportation device including three to four pins. The shape of the recess shown in the second embodiment allows the substrate supporting portion and the back surface of the semiconductor substrate to come into contact with each other without depending on the positional relationship between the semiconductor substrate and the substrate supporting portion of the substrate transfer device, and thus the first embodiment The shape is more preferable than the recess shown in FIG.

【0014】以上、本発明の半導体基板を好ましい実施
例に基づき説明したが、本発明はこれらの実施例に限定
されるものではない。凹部の形状は円形だけでなく多角
形とすることができる。また、凹部を環状とする場合、
1つだけでなく複数の環状とすることができるし、一部
が不連続な環状形状とすることもできる。凹部の大き
さ、深さは、基板搬送装置の基板支持部分の大きさ、半
導体基板に要求される機械的強度等により適宜変更する
ことができる。
Although the semiconductor substrate of the present invention has been described based on the preferred embodiments, the present invention is not limited to these embodiments. The shape of the recess may be not only circular but also polygonal. Also, when the recess is annular,
It is possible to have not only one but also a plurality of rings, or a part of which may have a discontinuous ring shape. The size and depth of the recess can be appropriately changed depending on the size of the substrate supporting portion of the substrate transfer device, the mechanical strength required for the semiconductor substrate, and the like.

【0015】[0015]

【発明の効果】本発明の半導体基板においては、その裏
面に凹部が設けられているので、半導体基板と基板搬送
装置が擦れて異物が生成した場合でも、かかる異物は凹
部に留まり、半導体基板の表面や裏面に付着することが
ない。従って、半導体基板を例えば露光装置に装着した
ときでも、このような異物が、半導体基板の平滑性に悪
影響を与えることがなく、半導体基板に良好なパターン
を形成することができる。
Since the semiconductor substrate of the present invention is provided with the concave portion on its back surface, even if the semiconductor substrate and the substrate transfer device are rubbed with each other to generate a foreign substance, the foreign substance remains in the concave portion and the semiconductor substrate Does not adhere to the front or back. Therefore, even when the semiconductor substrate is mounted on, for example, an exposure apparatus, such foreign matter does not adversely affect the smoothness of the semiconductor substrate, and a good pattern can be formed on the semiconductor substrate.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の半導体基板の第1の実施例を示す斜視
図である。
FIG. 1 is a perspective view showing a first embodiment of a semiconductor substrate of the present invention.

【図2】本発明の半導体基板の第2の実施例を示す斜視
図である。
FIG. 2 is a perspective view showing a second embodiment of the semiconductor substrate of the present invention.

【符号の説明】[Explanation of symbols]

10 半導体基板 12 半導体基板の裏面 14,24 凹部 16,26 凹部の底部 18 オリエンテーションフラット 10 Semiconductor Substrate 12 Backside of Semiconductor Substrate 14,24 Recess 16,26 Bottom of Recess 18 Orientation Flat

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】平坦な両面を有し、且つ基板搬送装置と接
触する裏面の一部分に凹部が設けられていることを特徴
とする半導体基板。
1. A semiconductor substrate having flat both sides and having a recessed portion in a part of the back surface which comes into contact with the substrate transfer device.
JP1937892A 1992-01-09 1992-01-09 Semiconductor substrate Pending JPH05190650A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1937892A JPH05190650A (en) 1992-01-09 1992-01-09 Semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1937892A JPH05190650A (en) 1992-01-09 1992-01-09 Semiconductor substrate

Publications (1)

Publication Number Publication Date
JPH05190650A true JPH05190650A (en) 1993-07-30

Family

ID=11997661

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1937892A Pending JPH05190650A (en) 1992-01-09 1992-01-09 Semiconductor substrate

Country Status (1)

Country Link
JP (1) JPH05190650A (en)

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