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JPH05163488A - Electroluminescent element of organic thin film - Google Patents

Electroluminescent element of organic thin film

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Publication number
JPH05163488A
JPH05163488A JP3333517A JP33351791A JPH05163488A JP H05163488 A JPH05163488 A JP H05163488A JP 3333517 A JP3333517 A JP 3333517A JP 33351791 A JP33351791 A JP 33351791A JP H05163488 A JPH05163488 A JP H05163488A
Authority
JP
Japan
Prior art keywords
group
groups
chemical
substituted
general formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3333517A
Other languages
Japanese (ja)
Inventor
Koji Nishizaki
浩二 西嵜
Shigeki Takeuchi
茂樹 竹内
Kiyoshi Tamaki
喜代志 玉城
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konica Minolta Inc
Original Assignee
Konica Minolta Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Inc filed Critical Konica Minolta Inc
Priority to JP3333517A priority Critical patent/JPH05163488A/en
Priority to US07/967,997 priority patent/US5443922A/en
Publication of JPH05163488A publication Critical patent/JPH05163488A/en
Pending legal-status Critical Current

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  • Electroluminescent Light Sources (AREA)
  • Luminescent Compositions (AREA)

Abstract

PURPOSE:To obtain an electroluminescence element having strong emission intensity, high durability and practical level. CONSTITUTION:In an electroluminescent element composed of a pair of counter electrodes and one or plural layers of an organic compound layer sandwiched in between the electrodes, at least one layer containing a specific polycyclic quinone compound and at least one layer containing a styryl compound are laid in the element to give an electroluminescent element of organic thin film.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は薄膜エレクトロルミネッ
センス素子に関し、特に平面光源及びフラットディスプ
レイなどに用いられる薄膜エレクトロルミネッセンス素
子に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film electroluminescent device, and more particularly to a thin film electroluminescent device used for flat light sources, flat displays and the like.

【0002】[0002]

【従来の技術】エレクトロルミネッセンス素子は、有機
発光層および該層をはさんだ一対の対向電極から構成さ
れており、その発光は一方の電極から注入された電子
と、もう一方の電極から注入された正孔により、発光層
内で再結合がおこり発光体がより高いエネルギー準位に
励起され、励起された発光体が元の基底状態にもどる際
にエネルギーを光として放出することにより発生する。
このようなキャリア注入型エレクトロルミネッセンス素
子は、発光層として薄膜状有機化合物を用いるようにな
ってから発光強度の強いものが得られるようになってき
た。例えば、米国特許3,530,325号には発光体として単
結晶アントラセン等を用いたもの、特開昭59-194393号
には正孔注入層と有機発光体層を組合せたもの、特開昭
63-295695号には正孔注入輸送層と有機電子注入輸送層
を組合せたもの及びJpn.Journal of Applied Physics,v
ol27,No2,P269〜271には正孔移動層と発光層と電子移動
層を組合せたものなどが開示されており、これらにより
これまで発光強度は改良されてきた。
2. Description of the Related Art An electroluminescence device is composed of an organic light emitting layer and a pair of counter electrodes sandwiching the organic light emitting layer, the light emission of which is injected from one electrode and from the other electrode. The holes cause recombination in the light-emitting layer to excite the light-emitting body to a higher energy level, and emit the energy as light when the excited light-emitting body returns to its original ground state.
In such a carrier injection type electroluminescence device, a thin film organic compound has been used as a light emitting layer, and a device having a strong light emission intensity has been obtained. For example, U.S. Pat. No. 3,530,325 uses a single crystal anthracene or the like as a light emitter, and JP-A-59-194393 discloses a combination of a hole injection layer and an organic light-emitting layer.
63-295695 includes a combination of a hole injecting and transporting layer and an organic electron injecting and transporting layer, and Jpn. Journal of Applied Physics, v.
ol27, No2, P269-271 discloses a combination of a hole transfer layer, a light emitting layer, and an electron transfer layer, and the emission intensity has been improved so far.

【0003】しかしながら上述した構成の従来のエレク
トロルミネッセンス素子においては、発光強度は改良さ
れてきてはいるが、耐久性に問題があり、まだ実用レベ
ルの発光強度及び耐久性に達していなかった。従って、
より発光の強度が強くかつ高耐久性のエレクトロルミネ
ッセンス素子の開発が望まれていた。
However, in the conventional electroluminescent device having the above-mentioned structure, although the emission intensity has been improved, there is a problem in durability, and the emission intensity and durability at the practical level have not yet been reached. Therefore,
It has been desired to develop an electroluminescence device having higher emission intensity and higher durability.

【0004】[0004]

【発明の目的】本発明は上記の実情を鑑みてなされたも
ので、その目的とするところは、より発光強度が強くか
つ高耐久性の実用レベルのエレクトロルミネッセンス素
子を提供することにある。
SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object of the present invention is to provide an electroluminescence device having a higher emission intensity and higher durability at a practical level.

【0005】[0005]

【問題点を解決する手段】本発明者らは上記の目的を達
成するため鋭意努力の研究を重ねた結果、一対の対向電
極とこれらによって挟持された複数の有機化合物層から
構成されているエレクトロルミネッセンス素子におい
て、下記一般式〔I〕で表される有機化合物を含有する
層と、下記一般式〔II〕で表されるスチリル化合物を含
有する層を、それぞれ少なくとも一層以上ずつ設けたこ
とを特徴とする有機薄膜エレクトロルミネッセンス素子
により、達成されることを見出した。
As a result of intensive research to achieve the above object, the inventors of the present invention have found that an electro device including a pair of counter electrodes and a plurality of organic compound layers sandwiched therebetween. In the luminescence device, a layer containing an organic compound represented by the following general formula [I], and a layer containing a styryl compound represented by the following general formula [II], at least one or more layers respectively It was found that this can be achieved by the organic thin film electroluminescence device.

【0006】[0006]

【化3】 [Chemical 3]

【0007】前記一般式〔I〕の残基Zの(Z1)〜
(Z4)中、R1〜R11はそれぞれ独立に、水素原子、
ハロゲン原子、置換若しくは無置換の続記5つの基;ア
ルキル基、不飽和鎖式炭化水素から誘導された1価の
基、複素環式基、アリール基、窒素2原子以上を含む基
又はスチリル基、アニシル基、アミノ基、アルキルアミ
ノ基、ジアルキルアミノ基、アルコキシ基、アルコキシ
カルボニル基、アミノカルボニル基、アリールオキシカ
ルボニル基、カルボキシル基、アシル基、アリールオキ
シル基、アラルキル基、アシルアミノ基、アシルオキシ
ル基、水酸基、シアノ基、ニトロ基、スルホ基、スルホ
ニウム基を表し、R1とR2、R2とR3、R3とR4、R6
とR7、R7とR8、R8とR9、R9とR10、R10とR11
互いに結合して置換若しくは無置換の飽和または不飽和
の環構造を形成していてもよい。
(Z1) of the residue Z of the general formula [I]
In (Z4), R 1 to R 11 are each independently a hydrogen atom,
Halogen atom, substituted or unsubstituted 5 groups; alkyl group, monovalent group derived from unsaturated chain hydrocarbon, heterocyclic group, aryl group, group containing 2 or more nitrogen atoms, or styryl group , Anisyl group, amino group, alkylamino group, dialkylamino group, alkoxy group, alkoxycarbonyl group, aminocarbonyl group, aryloxycarbonyl group, carboxyl group, acyl group, aryloxyl group, aralkyl group, acylamino group, acyloxyl group Represents a hydroxyl group, a cyano group, a nitro group, a sulfo group, and a sulfonium group, and represents R 1 and R 2 , R 2 and R 3 , R 3 and R 4 , R 6
And R 7 , R 7 and R 8 , R 8 and R 9 , R 9 and R 10 , and R 10 and R 11 may be bonded to each other to form a substituted or unsubstituted saturated or unsaturated ring structure. Good.

【0008】また前記一般式〔I〕の残基Zの(Z5)
中Xは、置換若しくは無置換の複素環を表す。
Further, (Z5) of the residue Z of the above general formula [I]
Inside X represents a substituted or unsubstituted heterocycle.

【0009】また上記一般式〔II〕中式中、R12及びR
13は、それぞれ独立に、水素原子、置換若しくは無置換
の続記4つの基;アルキル基、複素環基、アリール基、
不飽和鎖式炭化水素から誘導された1価の基を表し、R
12とR13は互いに結合して置換若しくは無置換の飽和ま
たは不飽和の環構造を形成していてもよい。
Further, in the general formula [II] above, R 12 and R
13 is each independently a hydrogen atom, a substituted or unsubstituted four groups described below; an alkyl group, a heterocyclic group, an aryl group,
Represents a monovalent group derived from an unsaturated chain hydrocarbon, R
12 and R 13 may combine with each other to form a substituted or unsubstituted saturated or unsaturated ring structure.

【0010】R14は、置換若しくは無置換の続記3つの
基;アルキル基、アリール基、アルコキシ基、又は−
{p(C6H4)}−CH=C{(−R12)(−R13)}を表し、R12
びR13は前記と同義である。
R 14 is the following three groups which are substituted or unsubstituted; an alkyl group, an aryl group, an alkoxy group, or
{P (C 6 H 4) } - CH = C {(- R 12) (- R 13)} represents, R 12 and R 13 are as defined above.

【0011】R15は水素原子、置換若しくは無置換の続
記3つの基;アルキル基、アリール基、アルコキシ基を
表す。
R 15 represents a hydrogen atom, the following three substituted or unsubstituted groups; an alkyl group, an aryl group and an alkoxy group.

【0012】[0012]

【発明の具体的構成】一般式〔I〕の残基(Z−1)〜
(Z−5)、および一般式〔II〕の表すハロゲン原子と
しては塩素原子、臭素原子、弗素原子、沃素原子;置換
若しくは無置換のアルキル基としてはメチル基,エチル
基,プロピル基,ブチル基,シクロヘキシル基などのア
ルキル基;置換若しくは無置換の不飽和鎖式炭化水素か
ら誘導された1価の基としてはビニル基,1-プロペニル
基、プロピル基,アリル基,イソプロペニル基,1-ブテ
ニル基,2-ブテニル基,2-ペンテニル基,エチニル基な
どの不飽和鎖式炭化水素から誘導された1価の基;置換
若しくは無置換の複素環式基としてはピペリジル基,ピ
ペリジノ基,ピローリル基,フリル基,チェニル基,イ
ミダゾリル基,ピラゾリル基,トリアゾリル基,ピリジ
ル基,チアゾリル基,ピリダジニル基,ピリドンよりな
る1価の基,モルホリニル基,モルホニリノ基,オキサ
ゾリル基,イソオキサゾリル基,イソチアゾリル基,ピ
リミジニル基,ピラジニル基,ピラニル基,ベンゾイミ
ダゾリル基,ベンゾチアゾリル基,ベンゾオキサゾリル
基,キノリル基などの複素環式基;置換若しくは無置換
のアリール基としてはフェニル基,ナフチル基,アント
ニル基,キシリル基,ビフェニル基,フェナントリル基
などのアリール基;置換若しくは無置換の窒素2原子以
上を含む基としてはアゾ基,フェニラゾ基,ナフチラゾ
基,ヒドラニゾ基,ヒドラゾ基,アゾキシ基,アジド
基,ジアゾアミノ基,アミディノ基,ウレイレン基,グ
アニディノ基などの窒素2原子以上を含む基;アルコキ
シル基としてはメトキシル基,エトキシル基,プロポキ
シル基,ブトキシル基,ペンチルオキシル基,ヘキシル
オキシル基などのアルコキシル基;アルコキシカルボニ
ル基としてはメトキシカルボニル基,エトキシカルボニ
ル基,ブトキシカルボニル基などのアルコキシカルボニ
ル基;アミノカルボニル基としてはアニリノカルボニル
基,ジメチルアミノカルボニル基,ラルバモイル基,ア
ラニル基などのアミノカルボニル基;アリールオキシカ
ルボニル基としてはナフチルオキシカルボニル基,キシ
リルオキシカルボニル基,フェノキシカルボニル基など
のアリールオキシカルボニル基;アシル基としてはホル
ミル基,アセチル基,プロピオニル基,ブチリル基,パ
レリル基,オアルミトイル基,ステアロイル基,オレオ
イル基,ベンゾイル基,トリオイル基,サリチロイル
基,シンナモイル基,ナフトイル基,フタロイル基,オ
キサリル基,マロニル基,スクシニル基,フロイル基な
どのアシル基;アリールオキシル基としてはフェノキシ
基,トリルオキシ基などのアリールオキシル基;アラル
キル基としてはベンジル基,フェネチル基などのアラル
キル基;アシルアミノ基としてはアセチルアミノ基,プ
ロピオニルアミノ基,ブチリルアミノ基などのアシルア
ミノ基;アシルオキシル基としてはアセチルオキシ基,
プロピオニルオキシ基,ブチリルオキシ基などのアシル
オキシル基である。
DETAILED DESCRIPTION OF THE INVENTION Residues (Z-1) of the general formula [I]
(Z-5) and the halogen atom represented by the general formula [II] are chlorine atom, bromine atom, fluorine atom and iodine atom; the substituted or unsubstituted alkyl group is methyl group, ethyl group, propyl group and butyl group. , Alkyl groups such as cyclohexyl groups; monovalent groups derived from substituted or unsubstituted unsaturated chain hydrocarbons are vinyl, 1-propenyl, propyl, allyl, isopropenyl, 1-butenyl Group, monovalent group derived from unsaturated chain hydrocarbon such as 2-butenyl group, 2-pentenyl group, ethynyl group; piperidyl group, piperidino group, pyrrolyl group as substituted or unsubstituted heterocyclic group , Furyl group, cenyl group, imidazolyl group, pyrazolyl group, triazolyl group, pyridyl group, thiazolyl group, pyridazinyl group, monovalent group consisting of pyridone, morpholyl Heterocyclic groups such as nyl group, morphonilino group, oxazolyl group, isoxazolyl group, isothiazolyl group, pyrimidinyl group, pyrazinyl group, pyranyl group, benzimidazolyl group, benzothiazolyl group, benzoxazolyl group, quinolyl group; substituted or unsubstituted Aryl groups such as phenyl group, naphthyl group, anthonyl group, xylyl group, biphenyl group, phenanthryl group and the like; groups containing two or more substituted or unsubstituted nitrogen atoms are azo group, phenylazo group, naphthyrazo group, hydranizo group Groups containing two or more nitrogen atoms such as groups, hydrazo groups, azoxy groups, azido groups, diazoamino groups, amidino groups, ureylene groups, guanidino groups; as alkoxyl groups methoxyl groups, ethoxyl groups, propoxyl groups, butoxyl groups, pentyl Oxyl , Alkoxyl groups such as hexyloxyl group; alkoxycarbonyl groups such as methoxycarbonyl group, ethoxycarbonyl group, butoxycarbonyl group and other alkoxycarbonyl groups; aminocarbonyl groups such as anilinocarbonyl group, dimethylaminocarbonyl group, larvamoyl group, alanyl Groups such as aminocarbonyl groups; aryloxycarbonyl groups such as naphthyloxycarbonyl groups, xylyloxycarbonyl groups and phenoxycarbonyl groups such as aryloxycarbonyl groups; acyl groups such as formyl, acetyl, propionyl, butyryl, Pareryl group, oaluminoyl group, stearoyl group, oleoyl group, benzoyl group, trioyl group, salicyloyl group, cinnamoyl group, naphthoyl group, phthaloyl group, oxali Groups, malonyl groups, succinyl groups, furoyl groups and other acyl groups; aryloxyl groups such as phenoxy and tolyloxy groups and other aryloxyl groups; aralkyl groups such as benzyl and phenethyl groups; aralkyl groups such as acetyl Acylamino group such as amino group, propionylamino group, butyrylamino group; acetyloxy group as acyloxyl group,
An acyloxyl group such as a propionyloxy group and a butyryloxy group.

【0013】前記の置換基とは、水素原子、ハロゲン原
子、メチル基,エチル基,プロピル基,ブチル基,シク
ロヘキシル基などのアルキル基、ビニル基,1-プロペニ
ル基,アリル基,イソプロペニル基,1-ブテニル基,2-
ブテニル基,2-ペンテニル基,エチニル基などの不飽和
鎖式炭化水素から誘導された1価の基、ピペリジル基,
ピペリジノ基,ピローリル基,フリル基,チェニル基,
イミダゾリル基,ピラゾリル基,トリアゾリル基,ピリ
ジル基,チアゾリル基,ピリダジニル基,ピリドンより
なる1価の基,モルホリニル基,モルホリニノ基,オキ
サゾリル基,イソオキサゾリル基,イソチアゾリル基,
ピリミジニル基,ピラジニル基,ピラニル基,ベンゾイ
ミダゾリル基,ベンゾチアゾリル基,ベンゾオキサゾリ
ル基,キノリル基などの複素環式基、フェニル基,ナフ
チル基,アントニル基,キシリル基,ビフェニル基,フ
ェナントリル基などのアリール基、アゾ基、フェニラゾ
基,ナフチラゾ基,ヒドラニゾ基,ヒドラゾ基,アゾキ
シ基,アジド基,ジアゾアミノ基,アミディノ基,ウレ
イレン基,グアニディノ基などの窒素2原子以上を含む
基、スチリル基、アニシル基、アミノ基、アルキルアミ
ノ基、ジアルキルアミノ基、メトキシル基,エトキシル
基,プロポキシル基,ブトキシル基,ペンチルオキシル
基,ヘキシルオキシル基などのアルコキシ基、メトキシ
カルボニル基,エトキシカルボニル基,ブトキシカルボ
ニル基などのアルコキシカルボニル基、アニリノカルボ
ニル基,ジメチルアミノカルボニル基,ラルバモイル
基,アラニル基などのアミノカルボニル基、ナフチルオ
キシカルボニル基,キシリルオキシカルボニル基,フェ
ノキシカルボニル基などのアリールオキシカルボニル
基、カルボキシル基、ホルミル基,アセチル基,プロピ
オニル基,ブチリル基,パレリル基,オアルミトイル
基,ステアロイル基,オレオイル基,ベンゾイル基,ト
リオイル基,サリチロイル基,シンナモイル基,ナフト
イル基,フタロイル基,オキサリル基,マロニル基,ス
クシニル基,フロイル基などのアシル基、フェノキシ
基,トリルオキシ基などのアリールオキシ基、ベンジル
基,フェネチル基などのアラルキル基、アセチルアミノ
基,プロピオニルアミノ基,ブチリルアミノ基などのア
シルアミノ基、アセチルオキシ基,プロピオニルオキシ
基,ブチリルオキシ基などのアシルオキシル基、水酸
基、シアノ基、ニトロ基、スルホ基またはスルホニウム
基を表す。
The above-mentioned substituents include hydrogen atom, halogen atom, alkyl group such as methyl group, ethyl group, propyl group, butyl group and cyclohexyl group, vinyl group, 1-propenyl group, allyl group, isopropenyl group, 1-butenyl group, 2-
Monovalent groups derived from unsaturated chain hydrocarbons such as butenyl group, 2-pentenyl group, ethynyl group, piperidyl group,
Piperidino group, pyrrolyl group, furyl group, cenyl group,
Monovalent group consisting of imidazolyl group, pyrazolyl group, triazolyl group, pyridyl group, thiazolyl group, pyridazinyl group, pyridone, morpholinyl group, morpholinino group, oxazolyl group, isoxazolyl group, isothiazolyl group,
Heterocyclic groups such as pyrimidinyl group, pyrazinyl group, pyranyl group, benzimidazolyl group, benzothiazolyl group, benzoxazolyl group, quinolyl group, aryl such as phenyl group, naphthyl group, anthonyl group, xylyl group, biphenyl group, phenanthryl group Group, azo group, phenylazo group, naphthyrazo group, hydranizo group, hydrazo group, azoxy group, azido group, diazoamino group, group containing two or more nitrogen atoms such as amidino group, ureylene group, guanidino group, styryl group, anisyl group, Alkoxy groups such as amino group, alkylamino group, dialkylamino group, methoxyl group, ethoxyl group, propoxyl group, butoxyl group, pentyloxyl group, hexyloxyl group, methoxycarbonyl group, ethoxycarbonyl group, butoxycarbonyl group, etc. Aminocarbonyl groups such as oxycarbonyl group, anilinocarbonyl group, dimethylaminocarbonyl group, larvamoyl group, alanyl group, naphthyloxycarbonyl group, xylyloxycarbonyl group, aryloxycarbonyl group such as phenoxycarbonyl group, carboxyl group, formyl Group, acetyl group, propionyl group, butyryl group, pareryl group, oaluminoyl group, stearoyl group, oleoyl group, benzoyl group, trioyl group, salicyloyl group, cinnamoyl group, naphthoyl group, phthaloyl group, oxalyl group, malonyl group, succinyl group , Acyl group such as furoyl group, aryloxy group such as phenoxy group and tolyloxy group, aralkyl group such as benzyl group and phenethyl group, acetylamino group, propionylamino group, butyrylamino An acylamino group, an acetyloxy group, such as, propionyloxy group, acyloxy group such as butyryloxy group, a hydroxyl group, a cyano group, a nitro group, a sulfo group or a sulfonium group.

【0014】このような一般式〔I〕で表される有機化
合物の具体例としては、次に示すものを挙げることがで
きる。
Specific examples of such an organic compound represented by the general formula [I] include those shown below.

【0015】[0015]

【化4】 [Chemical 4]

【0016】[0016]

【化5】 [Chemical 5]

【0017】[0017]

【化6】 [Chemical 6]

【0018】[0018]

【化7】 [Chemical 7]

【0019】[0019]

【化8】 [Chemical 8]

【0020】[0020]

【化9】 [Chemical 9]

【0021】[0021]

【化10】 [Chemical 10]

【0022】[0022]

【化11】 [Chemical 11]

【0023】[0023]

【化12】 [Chemical 12]

【0024】[0024]

【化13】 [Chemical 13]

【0025】[0025]

【化14】 [Chemical 14]

【0026】[0026]

【化15】 [Chemical 15]

【0027】[0027]

【化16】 [Chemical 16]

【0028】[0028]

【化17】 [Chemical 17]

【0029】[0029]

【化18】 [Chemical 18]

【0030】[0030]

【化19】 [Chemical 19]

【0031】[0031]

【化20】 [Chemical 20]

【0032】[0032]

【化21】 [Chemical 21]

【0033】[0033]

【化22】 [Chemical formula 22]

【0034】[0034]

【化23】 [Chemical formula 23]

【0035】[0035]

【化24】 [Chemical formula 24]

【0036】[0036]

【化25】 [Chemical 25]

【0037】次に一般式〔II〕で表されるスチリル化合
物の具体例を示す。
Next, specific examples of the styryl compound represented by the general formula [II] are shown.

【0038】[0038]

【化26】 [Chemical formula 26]

【0039】[0039]

【化27】 [Chemical 27]

【0040】[0040]

【化28】 [Chemical 28]

【0041】[0041]

【化29】 [Chemical 29]

【0042】[0042]

【化30】 [Chemical 30]

【0043】[0043]

【化31】 [Chemical 31]

【0044】[0044]

【化32】 [Chemical 32]

【0045】[0045]

【化33】 [Chemical 33]

【0046】[0046]

【化34】 [Chemical 34]

【0047】[0047]

【化35】 [Chemical 35]

【0048】[0048]

【化36】 [Chemical 36]

【0049】[0049]

【化37】 [Chemical 37]

【0050】[0050]

【化38】 [Chemical 38]

【0051】[0051]

【化39】 [Chemical Formula 39]

【0052】これらはあくまでも、説明のために示した
具体例であり本発明の請求の範囲を限定するものでは無
い。
These are only specific examples shown for the purpose of explanation and do not limit the scope of the claims of the present invention.

【0053】本発明一般式〔I〕で表せられる有機化合
物は公知の方法(J.Chem.Soc,1957,4616等に記載されて
いる。)で容易に合成することができる。
The organic compound represented by the general formula [I] of the present invention can be easily synthesized by a known method (described in J. Chem. Soc, 1957, 4616, etc.).

【0054】合成例1 掻混ぜ器と還流冷却器および滴下漏斗を取り付けた三つ
口フラスコに、クロラニル(21g;mp287℃),無水マレ
イン酸(150g;mp55.5℃)およびペリレン(10g;mp280
℃)十分粉砕混合した物を入れ、加熱しながら弗点で10
分間掻混ぜた。その後、滴下漏斗から温めたキシレン
(200ml)を加え掻混ぜ1時間沸騰し、熱濾過した。熱
濾過で分離した赤茶色針状結晶をキシレンで洗い、さら
にエーテルで十分に洗浄することにより赤茶色針状結晶
を得た。得られた赤茶色針状結晶を減圧昇華装置を使っ
て300℃,10-4mmHgで4時間半昇華し、昇華残留物をさ
らに減圧昇華装置を使って400℃,10-4mmHgで6時間処
理することにより、光沢のある赤茶色針状結晶(I−2
8)が得られた。
Synthesis Example 1 Chloranil (21 g; mp287 ° C.), maleic anhydride (150 g; mp55.5 ° C.) and perylene (10 g; mp280) were placed in a three-necked flask equipped with a stirrer, a reflux condenser and a dropping funnel.
℃) Put the mixture that has been sufficiently crushed and mixed, and while heating, add 10
Stir for minutes. Then, warmed xylene (200 ml) was added from the dropping funnel, stirred and boiled for 1 hour, and hot filtered. The reddish brown needle-like crystals separated by hot filtration were washed with xylene and further thoroughly washed with ether to obtain reddish-brown needle-like crystals. The obtained reddish brown needle crystals were sublimated for 4 hours and a half at 300 ° C and 10 -4 mmHg using a vacuum sublimation device, and the sublimation residue was further used at 400 ° C and 10 -4 mmHg for 6 hours using a vacuum sublimation device. By processing, glossy reddish brown needle crystals (I-2
8) was obtained.

【0055】合成例2 合成例1により合成した(I−28)にo-フェニレンジア
ミンを非反応性溶媒,好ましくはN-メチルピロリドン、
N,N-ジメチルホルムアミド等の非プロトン性溶媒;キノ
リン等の塩基性溶媒;o-ジクロルベンゼン等の塩素系溶
剤の単独又は混合溶媒中、室温以上好ましくは150〜250
℃の温度条件下で縮合反応させることにより(I−1)
合成することができる。
Synthetic Example 2 (I-28) synthesized in Synthetic Example 1 with o-phenylenediamine as a non-reactive solvent, preferably N-methylpyrrolidone,
Aprotic solvent such as N, N-dimethylformamide; basic solvent such as quinoline; chlorine-based solvent such as o-dichlorobenzene, alone or in a mixed solvent, at room temperature or higher, preferably 150 to 250
By conducting a condensation reaction under a temperature condition of ℃ (I-1)
Can be synthesized.

【0056】 合成例3合成例1により合成した(I−28)に2,3-ジア
ミノナフタレンを非反応性溶媒,好ましくはN-メチルピ
ロリドン、N,N-ジメチルホルムアミド等の非プロトン性
溶媒;キノリン等の塩基性溶媒;o-ジクロルベンゼン等
の塩素系溶剤の単独又は混合溶媒中、室温以上好ましく
は150〜250℃の温度条件下で縮合反応させることにより
(I−2)を合成することができる。
Synthesis Example 3 2,3-diaminonaphthalene was added to (I-28) synthesized in Synthesis Example 1 as a non-reactive solvent, preferably an aprotic solvent such as N-methylpyrrolidone or N, N-dimethylformamide; A basic solvent such as quinoline; a chlorine-based solvent such as o-dichlorobenzene, alone or in a mixed solvent, is subjected to condensation reaction at room temperature or higher, preferably at 150 to 250 ° C to synthesize (I-2). be able to.

【0057】合成例4 合成例1により合成した(I−28)にアニリンを非反応
性溶媒,好ましくはN-メチルピロリドン、N,N-ジメチル
ホルムアミド等の非プロトン性溶媒;キノリン等の塩基
性溶媒;o-ジクロルベンゼン等の塩素系溶剤の単独又は
混合溶媒中、室温以上好ましくは150〜250℃の温度条件
下で縮合反応させることにより(I−37)を合成するこ
とができる。
Synthetic Example 4 (I-28) synthesized in Synthetic Example 1 with aniline as a non-reactive solvent, preferably an aprotic solvent such as N-methylpyrrolidone or N, N-dimethylformamide; basic such as quinoline. Solvent; (I-37) can be synthesized by subjecting a condensation reaction to a chlorine-based solvent such as o-dichlorobenzene alone or in a mixed solvent under a temperature condition of room temperature or higher, preferably 150 to 250 ° C.

【0058】合成例5 合成例1により合成した(I−28)に1,8-ジアミノナフ
タレンを非反応性溶媒,好ましくはN-メチルピロリド
ン、N,N-ジメチルホルムアミド等の非プロトン性溶媒;
キノリン等の塩基性溶媒;o-ジクロルベンゼン等の塩素
系溶剤の単独又は混合溶媒中、室温以上好ましくは150
〜250℃の温度条件下で縮合反応させることにより(I−
95)を合成することができる。
Synthesis Example 5 1,8-Diaminonaphthalene was added to (I-28) synthesized in Synthesis Example 1 as a non-reactive solvent, preferably an aprotic solvent such as N-methylpyrrolidone or N, N-dimethylformamide;
A basic solvent such as quinoline; a chlorine-based solvent such as o-dichlorobenzene, alone or in a mixed solvent, at room temperature or higher, preferably 150
By conducting the condensation reaction under the temperature condition of ~ 250 ° C (I-
95) can be synthesized.

【0059】また本発明一般式〔II〕で表せられるスチ
リル化合物も公知の方法で容易に製造することができ
る。
The styryl compound represented by the general formula [II] of the present invention can be easily produced by a known method.

【0060】一般式〔II〕で表せられるスチリル化合物
は例えば下記一般式〔III〕で表される燐化合物と一般
式〔IV〕で表されるジホルミル化合物とを反応させるこ
とにより得ることができる。
The styryl compound represented by the general formula [II] can be obtained, for example, by reacting a phosphorus compound represented by the following general formula [III] with a diformyl compound represented by the general formula [IV].

【0061】[0061]

【化40】 [Chemical 40]

【0062】一般式〔III〕中、R12,R13は〔II〕と
同意義、Xは−P+−(R16)3Y−で表されるトリフェニル
ホスホニウム基、あるいはトリアルキルホスホニウム
塩、または、−PO(OR17)2で表されるジアルキル亜燐酸
塩基を示す。R16はアルキル基、アリール基を表し、Y
はハロゲンイオンを表し、R17はアルキル基を表す。
In the general formula [III], R 12 and R 13 have the same meanings as [II], and X is a triphenylphosphonium group represented by -P + -(R 16 ) 3 Y-, or a trialkylphosphonium salt. Or a dialkyl phosphite group represented by —PO (OR 17 ) 2 . R 16 represents an alkyl group or an aryl group, and Y
Represents a halogen ion, and R 17 represents an alkyl group.

【0063】一般式〔IV〕中、R14,R15は〔II〕と同
意義である。
In the general formula [IV], R 14 and R 15 have the same meanings as [II].

【0064】一般式〔III〕で表される燐化合物は対応
するハロメチル化合物とトリアリールホスフィンあるい
はトリアルキルスルフィン、または亜燐酸トリアルキル
とを直接あるいはトルエン、キシレン等の溶媒中で加熱
することにより容易に製造することができる。
The phosphorus compound represented by the general formula [III] can be easily prepared by heating the corresponding halomethyl compound and triarylphosphine or trialkylsulfin, or trialkyl phosphite directly or in a solvent such as toluene or xylene. Can be manufactured.

【0065】上記スチリル化合物の合成方法における反
応溶媒としては不活性溶剤、例えば炭化水素類、アルコ
ール類、エーテル類が良好で、メタノール、エタノー
ル、イソプロパノール、ブタノール、2-メトキシエタノ
ール、1,2-ジメトキシエタン、ビス(2-メトキシエチ
ル)エーテル、ジオキサン、テトラヒドロフラン、トル
エン、キシレン、ジメチルスルホキシド、N,N-ジメチル
ホルムアミド、N-メチルピロリドン、1,3-ジメチル-2-
イミダゾリジノンなどが挙げられる。中でも極性溶媒、
例えばN,N-ジメチルホルムアミド及びジメチルスルホキ
シドが好適である。
As a reaction solvent in the method for synthesizing the styryl compound, an inert solvent such as hydrocarbons, alcohols and ethers is preferable, and methanol, ethanol, isopropanol, butanol, 2-methoxyethanol, 1,2-dimethoxy are preferable. Ethane, bis (2-methoxyethyl) ether, dioxane, tetrahydrofuran, toluene, xylene, dimethylsulfoxide, N, N-dimethylformamide, N-methylpyrrolidone, 1,3-dimethyl-2-
Examples include imidazolidinone. Among them, polar solvents,
For example, N, N-dimethylformamide and dimethyl sulfoxide are suitable.

【0066】縮合剤として苛性ソーダ、苛性カリ、ナト
リウムアミド水素化ナトリウム及びナトリウムメチラー
ト、カリウム-t-ブトキシド等のアルコラートが用いら
れる。反応温度は、使用する溶媒の縮合剤に対する安定
性、縮合成分の反応性、縮合剤の反応性によって、約0
℃〜約100℃まで広範囲に選択することができ、好まし
くは10〜80℃である。
As the condensing agent, caustic soda, caustic potash, sodium amide hydride and sodium methylate, and alcoholates such as potassium t-butoxide are used. The reaction temperature is about 0 depending on the stability of the solvent used for the condensing agent, the reactivity of the condensing component, and the reactivity of the condensing agent.
A wide range can be selected from 0 ° C to about 100 ° C, preferably 10 to 80 ° C.

【0067】合成例6 ベンジルホスホン酸ジエチル2.28g、トリフェニルアミ
ン-4,4-ジカルボアルデヒド1.50gを1,2-ジメトキシエタ
ン20mlに加え、これに50%水素化ナトリウム0.50gを加
え、室温で3時間撹拌し反応させた。この後約30分間加
熱還流させた。室温まで冷却した後、反応混合物を水20
0mlに注ぎ、生成した沈殿物を濾取し、水洗、乾燥させ
1.46g(収率65%)の粉末を得た。更にこの粉末を酢酸
エチルとメタノールから再結晶し淡泊黄色の例示化合物
(II−16)を得た。
Synthesis Example 6 Diethyl benzylphosphonate (2.28 g) and triphenylamine-4,4-dicarbaldehyde (1.50 g) were added to 1,2-dimethoxyethane (20 ml), and 50% sodium hydride (0.50 g) was added thereto at room temperature. The mixture was stirred for 3 hours and reacted. After that, the mixture was heated to reflux for about 30 minutes. After cooling to room temperature, the reaction mixture is washed with water 20
Pour into 0 ml, filter the precipitate formed, wash with water and dry.
1.46 g (65% yield) of powder was obtained. Further, this powder was recrystallized from ethyl acetate and methanol to obtain a pale yellowish exemplary compound (II-16).

【0068】得られたスチリル化合物の融点は134〜137
℃であった。
The melting point of the obtained styryl compound is 134 to 137.
It was ℃.

【0069】本発明の有機薄膜エレクトロルミネッセン
ス素子の構成には各種態様があるが、基本的には複数の
有機化合物層および該層を挟んだ一対の対向電極から構
成されており、具体的には、基板/陽極/正孔注入層
/発光層/陰極(図1(1))、基板/陽極/発光層
/電子注入層/陰極(図1(2))、基板/陽極/正
孔注入層/発光層/電子注入層/陰極(図1(3))な
どが挙げられるが、本発明は必ずしもこの構成に限定さ
れるものではなく、それぞれにおいて発光層,正孔注入
層,電子注入層を複数層設けたり、またそれぞれにおい
て正孔注入層/発光層,発光層/電子注入層,正孔注入
層/発光層/電子注入層を繰返し積層した構成にした
り、発光層と電子注入層との間に電子注入材と発光材と
の混合層、正孔注入層と発光層との間に正孔注入材と発
光材との混合層を設けたりまたそれぞれにおいて他の層
を設けてもさしつかえない。
The organic thin film electroluminescent element of the present invention has various configurations, but basically, it is composed of a plurality of organic compound layers and a pair of counter electrodes sandwiching the layers, and specifically, , Substrate / anode / hole injection layer / emission layer / cathode (FIG. 1 (1)), substrate / anode / emission layer / electron injection layer / cathode (FIG. 1 (2)), substrate / anode / hole injection layer / Emission layer / electron injection layer / cathode (FIG. 1 (3)) and the like, but the present invention is not necessarily limited to this structure, and each of the emission layer, the hole injection layer and the electron injection layer is provided. A plurality of layers may be provided, a hole injection layer / a light emitting layer, a light emitting layer / an electron injection layer, and a hole injection layer / a light emitting layer / an electron injection layer may be repeatedly laminated in each layer. Between the mixed layer of electron injection material and light emitting material, hole injection layer and emission layer No problem be provided other layers in the mixed layer is provided or also each of the hole injecting material and a light emitting material between the layers.

【0070】発光層は蒸着法,スピンコート法,キャス
ト法などにより形成しその膜厚は10〜1000nmが好まし
く、より好ましくは20〜150nmである。正孔注入層は蒸
着法,スピンコート法,キャスト法などにより形成しそ
の膜厚は10〜1000nmが好ましく、より好ましくは40〜20
0nmである。電子注入層は蒸着法,スピンコート法,キ
ャスト法などにより形成しその膜厚は10〜1000nmが好ま
しく、より好ましくは30〜200nmである。
The light emitting layer is formed by a vapor deposition method, a spin coating method, a casting method or the like, and its film thickness is preferably 10 to 1000 nm, more preferably 20 to 150 nm. The hole injection layer is formed by a vapor deposition method, a spin coating method, a casting method or the like, and the film thickness thereof is preferably 10 to 1000 nm, more preferably 40 to 20 nm.
It is 0 nm. The electron injection layer is formed by a vapor deposition method, a spin coating method, a casting method or the like, and its film thickness is preferably 10 to 1000 nm, more preferably 30 to 200 nm.

【0071】基板1は、ソーダガラス,無蛍光ガラス,
燐酸系ガラス,硼酸系ガラスなどのガラス板、石英、ア
クリル系樹脂,スチレン系樹脂,ポリカーボネート系樹
脂,エポキシ系樹脂,ポリエチレン,ポリエステル,シ
リコーン系樹脂などのプラスチック板およびプラスチッ
クフィルム、アルミナなどの金属板および金属ホイルな
どが用いられる。
The substrate 1 is made of soda glass, non-fluorescent glass,
Glass plates such as phosphoric acid glass, boric acid glass, quartz, acrylic resin, styrene resin, polycarbonate resin, epoxy resin, polyethylene, polyester, silicone resin and other plastic plates and plastic films, alumina and other metal plates And a metal foil or the like is used.

【0072】陽極2は4eVより大きい仕事関数を持つ
ものが好ましく、炭素、アルミニウム、バナジウム、
鉄、コバルト、ニッケル、クロム、銅、亜鉛、タングス
テン、銀、錫、白金、金などの金属およびこれらの合
金、酸化亜鉛、酸化インジウム、ITO,NESA等の
酸化錫もしくは酸化錫インジウム系等の複合化合物、沃
化銅などの化合物、ZnO:Al、SnO2:Sbなど
の酸化物と金属の混合物、更にはポリ(3-メチルチオフ
ェン) 、ポリピロール、ポリアニリンなどの導電性ポリ
マーなどが用いられる。膜厚は10〜1000nmが好ましく、
より好ましくは10〜200nmである。
The anode 2 preferably has a work function larger than 4 eV, such as carbon, aluminum, vanadium,
Metals such as iron, cobalt, nickel, chromium, copper, zinc, tungsten, silver, tin, platinum and gold and alloys thereof, tin oxide such as zinc oxide, indium oxide, ITO and NESA or indium tin oxide-based composites Compounds, compounds such as copper iodide, mixtures of oxides and metals such as ZnO: Al, SnO 2 : Sb, and conductive polymers such as poly (3-methylthiophene), polypyrrole, and polyaniline are used. The film thickness is preferably 10 to 1000 nm,
More preferably, it is 10 to 200 nm.

【0073】陰極3は4eVより小さい仕事関数を持つ
ものが好ましく、マグネシウム、カルシウム、ナトリウ
ム、カリウム、チタニウム、インジウム、イットリウ
ム、リチウム、ガドリニウム、イッテルビウム、ルテニ
ウム、マンガン、アルミニウム、銀、錫、鉛などの金属
及びこれらの合金、アルミニウム/酸化アルミニウム複
合体などが用いられる。膜厚は10〜1000nmが好ましく、
より好ましくは10〜900nmである。
The cathode 3 preferably has a work function smaller than 4 eV, such as magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, ytterbium, ruthenium, manganese, aluminum, silver, tin and lead. Metals and alloys thereof, aluminum / aluminum oxide composites and the like are used. The film thickness is preferably 10 to 1000 nm,
More preferably, it is 10 to 900 nm.

【0074】電極より光を取り出す場合は、陽極2、陰
極3のうち少なくともどちらか一方は、透過率10%以上
の透明又は半透明であり、陽極2のみが透過率10%以上
の透明又は半透明である場合は基板1も透明又は半透明
であることが好ましい。
When light is taken out from the electrode, at least one of the anode 2 and the cathode 3 is transparent or semitransparent with a transmittance of 10% or more, and only the anode 2 is transparent or semitransparent with a transmittance of 10% or more. When it is transparent, the substrate 1 is also preferably transparent or semi-transparent.

【0075】発光層4に用いられる発光物質の具体例と
しては、前記一般式により表せられる有機化合物以外に
オキシノイド化合物(特開昭63-295695号,特開平2-155
95号,同2-66873号などに記載のもの)、ペリレン化合
物(「Soluble Perylene Fluorescent Dyes with Photo
stability,vol.115,P2927(1982)」,「Jpn.Journal ofA
pplied Physics,vol.27,No2,L269(1988)」,「Bull.Che
m.Soc.Jpn.vol.25,L411(1952)」,欧州特許553,353A1
号,特開昭55-36849号,同57-51781号,特開平2-66873
号,同2-196885号,同2-288188号,同3-791号などに記
載のもの)、クマリン化合物(特開昭57-51781号,特開
平2-66873号,同3-792などに記載のもの)、アザクマリ
ン化合物(特開平3-792号などに記載のもの)、オキサ
ゾール化合物(米国特許3,257,203号,特開平3-193763
号,同3-162482号,同2-220396号などに記載のもの)、
オキサジアゾール化合物(米国特許3,189,447号,特開
平2-216791号などに記載のもの)、ペリノン化合物(特
開平2-88689号,同2-289676号などに記載のもの)、ピ
ロロピロール化合物(特開平2-296891号などに記載のも
の)、ナフタレン化合物(特開昭57-51781号,特開平2-2
55789号,同3-162485号などに記載のもの)、アントラ
セン化合物(特開昭56-46234号,同57-51781号,特開平
2-66873号,同3-162485号などに記載のもの)、フルオ
レン化合物(特開昭54-110837号,特開平3-162485号な
どに記載のもの)、フルオランテン化合物(特開平3-16
2485号などに記載のもの)、テトラセン化合物(特開平
3-162485号などに記載のもの)、ピレン化合物(特開昭
57-51781号,特開平3-162485号,同3-502333号などに記
載のもの)、コロネン化合物(特開平3-162485号などに
記載のもの)、キノロン化合物及びアザキノロン化合物
(特開平3-162483号などに記載のもの)、ピラゾリン誘
導体及びピラゾロン誘導体(米国特許3,180,729号,同
4,278,746号,特開昭55-88064号,同55-88065号,同49-
105537号,同55-51086号,同56-80051号,同56-88141
号,同57-45545号,同54-112637号,同55-74546号,特
開平2-220394号,同3-162486号などに記載のもの)、ロ
ーダミン化合物(特開平2-66873号,同3-188189号など
に記載のもの)、クリセン化合物(特開昭57-51781号,
特開平3-502333号などに記載のもの)、フェナントレン
化合物(特開昭57-51781号などに記載のもの)、シクロ
ペンタジエン化合物(特開平2-289675号などに記載のも
の)、スチルベン化合物(米国特許4,356,429号,特開
昭57-51781号,同61-210363号,同61-228451号,同61-1
4642号,同61-72255号,同62-47646号,同62-36674号,
同62-10652号,同62-30255号,同60-934454号,同60-94
462号,同60-174749号,同60-175052号,同63-149652
号,特開平1-173034号,同1-200262号,同1-245087号な
どに記載のもの)、ジフェニルキノン化合物(「Polyme
r Preprints,Japan,vol.37,p681(1988)」,特開平3-152
184号などに記載のもの)、スチリル化合物(特開平1-2
45087号,同2-209988号,同2-222484号,同2-247278号
などに記載のもの)、ブタジエン化合物(米国特許4,35
6,429号,特開昭57-51781号などに記載のもの)、ジシ
アノメチレンピラン化合物(特開平2-66873号,同3-162
481号などに記載のもの)、ジシアノメチレンチオピラ
ン化合物(特開平2-66873号,同3-162481号などに記載
のもの)、フルオレセイン化合物(特開平2-66873号な
どに記載のもの)、ピリリウム化合物(特開平2-66873
号などに記載のもの)、チアピリリウム化合物(特開平
2-66873号などに記載のもの)、セレナピリリウム化合
物(特開平2-66873号などに記載のもの)、テルロピリ
リウム化合物(特開平2-66873号などに記載のもの)、
芳香族アルダジエン化合物(特開平2-220393号などに記
載のもの)、オリゴフェニレン化合物(特開平3-162484
号などに記載のもの)、チオキサンテン化合物(特開平
3-177486号などに記載のもの)、アンスラセン化合物
(特開平3-178942号などに記載のもの)、シアニン化合
物(特開平2-66873号などに記載のもの)、アクリジン
化合物(特開昭57-51781号などに記載のもの)、8-ヒド
ロキシキノリン化合物の金属鎖体(特開平2-8287号,同
2-8290号などに記載のもの)、2,2′-ビピリジン化合物
の金属鎖体(特開平2-8288号,同2-8289号などに記載の
もの)、シッフ塩とIII族金属との鎖体(特開平1-29749
0号などに記載のもの)、オキシン金属鎖体(特開平3-1
76993号などに記載のもの)、希土類鎖体(特開平1-256
584号,同1-282291号などに記載のもの)などの蛍光物
質を使用することができる。
Specific examples of the luminescent substance used in the luminescent layer 4 include oxinoid compounds (JP-A-63-295695 and JP-A-2-155) in addition to the organic compound represented by the above general formula.
95, No. 2-66873, etc.), perylene compounds (“Soluble Perylene Fluorescent Dyes with Photo
stability, vol.115, P2927 (1982) "," Jpn. Journal of A
pplied Physics, vol.27, No2, L269 (1988) "," Bull.Che
m.Soc.Jpn.vol.25, L411 (1952) ", European Patent 553,353A1
No. 55, No. 55-36849, No. 57-51781, No. 2-66873
Nos. 2-196885, 2-288188, 3-791, etc.) and coumarin compounds (JP-A-57-51781, JP-A-2-66873, 3-792, etc.). Described), azacoumarin compounds (described in JP-A-3-792, etc.), oxazole compounds (US Pat. No. 3,257,203, JP-A-3-93763).
No., No. 3-162482, No. 2-220396, etc.),
Oxadiazole compounds (described in US Pat. No. 3,189,447, JP-A-2-216791, etc.), perinone compounds (described in JP-A-2-88689, JP-A-2-289676, etc.), pyrrolopyrrole compounds (special Those described in Kaihei 2-296891), naphthalene compounds (JP-A-57-51781, JP-A-2-2)
55789, 3-162485, etc.), anthracene compounds (JP-A-56-46234, JP-A-57-51781, JP-A-5-51781)
2-66873, 3-162485, etc.), fluorene compounds (described in JP-A-54-110837, JP-A-3-162485, etc.), fluoranthene compounds (JP-A-3-16)
2485), a tetracene compound (JP
3-162485, etc.), pyrene compounds (JP
57-51781, JP-A-3-162485, JP-A-3-502333, etc.), coronene compound (JP-A-3-162485, etc.), quinolone compound, and azaquinolone compound (JP-A-3-261485). 162483, etc.), pyrazoline derivatives and pyrazolone derivatives (US Pat. No. 3,180,729;
4,278,746, JP-A-55-88064, 55-88065, 49-
105537, 55-51086, 56-80051, 56-88141
No. 57-45545, No. 54-112637, No. 55-74546, those described in JP-A-2-220394, 3-162486, etc.), rhodamine compounds (JP-A-2-66873, JP-A-2-66873, 3-188189 etc.), chrysene compounds (JP-A-57-51781,
JP-A-3-502333, etc.), phenanthrene compound (JP-A-57-51781, etc.), cyclopentadiene compound (JP-A-2-289675, etc.), stilbene compound ( U.S. Pat. No. 4,356,429, JP-A-57-51781, 61-210363, 61-228451, 61-1.
No. 4642, No. 61-72255, No. 62-47646, No. 62-36674,
62-10652, 62-30255, 60-934454, 60-94
No. 462, No. 60-174749, No. 60-175052, No. 63-149652
JP-A Nos. 1-173034, 1-200262, 1-245087, etc.), diphenylquinone compounds ("Polyme
r Preprints, Japan, vol.37, p681 (1988) ", JP-A-3-152
No. 184) and styryl compounds (JP-A 1-2
45087, 2-209988, 2-222484, 2-247278, etc.), butadiene compound (US Pat.
6,429, those described in JP-A-57-51781, etc.), dicyanomethylenepyran compounds (JP-A-2-66873, JP-A-3-162)
481), dicyanomethylene thiopyran compound (described in JP-A-2-66873, JP-A-3-162481, etc.), fluorescein compound (described in JP-A-2-66873, etc.), Pyrylium compound (JP-A-2-66873
, Etc.), thiapyrylium compounds (JP
2-66873 etc.), selenapyrylium compound (described in JP-A-2-66873 etc.), telluropyrylium compound (described in JP-A-2-66873 etc.),
Aromatic adadiene compounds (described in JP-A-2-220393, etc.), oligophenylene compounds (JP-A-3-62484)
, Etc.), thioxanthene compounds (JP
3-177486), anthracene compound (described in JP-A-3-178942), cyanine compound (described in JP-A-2-66873), acridine compound (JP-A-57). -51781), metal chain of 8-hydroxyquinoline compound (Japanese Patent Laid-Open No. 2-8287,
2-8290), metal chains of 2,2'-bipyridine compounds (such as those described in JP-A Nos. 2-8288 and 2-8289), Schiff salts and Group III metals Chain (Japanese Patent Laid-Open No. 1-29749
No. 0, etc.), oxine metal chain (Japanese Patent Laid-Open No. 3-1
76993, etc.), rare earth chain (Japanese Patent Laid-Open No. 1-256)
No. 584, No. 1-282291, etc.) can be used.

【0076】これらの化合物の好ましい代表例として次
に示す物が挙げられる。
Preferred examples of these compounds include the following.

【0077】[0077]

【化41】 [Chemical 41]

【0078】[0078]

【化42】 [Chemical 42]

【0079】[0079]

【化43】 [Chemical 43]

【0080】[0080]

【化44】 [Chemical 44]

【0081】[0081]

【化45】 [Chemical 45]

【0082】[0082]

【化46】 [Chemical 46]

【0083】[0083]

【化47】 [Chemical 47]

【0084】[0084]

【化48】 [Chemical 48]

【0085】[0085]

【化49】 [Chemical 49]

【0086】[0086]

【化50】 [Chemical 50]

【0087】[0087]

【化51】 [Chemical 51]

【0088】[0088]

【化52】 [Chemical 52]

【0089】[0089]

【化53】 [Chemical 53]

【0090】[0090]

【化54】 [Chemical 54]

【0091】上記代表例中、Rはそれぞれ独立に、水素
原子、ハロゲン原子、置換若しくは無置換の続記5つの
基;アルキル基、複素環式基、アリール基、不飽和鎖式
炭化水素から誘導された1価の基、窒素2原子以上を含
む基、又はスチリル基、アニシル基、アミノ基、アルキ
ルアミノ基、ジアルキルアミノ基、アルコキシ基、アル
コキシカルボニル基、アミノカルボニル基、アリールオ
キシカルボニル基、カルボキシル基、アシル基、アリー
ルオキシル基、アラルキル基、アシルアミノ基、アシル
オキシル基、水酸基、シアノ基、ニトロ基、スルホ基及
びスルホニウム基を表し、X-はアニオンを、Yはカル
コゲン原子を表す。
In the above representative examples, each R is independently derived from a hydrogen atom, a halogen atom, a substituted or unsubstituted five groups described below; an alkyl group, a heterocyclic group, an aryl group and an unsaturated chain hydrocarbon. Monovalent group, group containing two or more nitrogen atoms, or styryl group, anisyl group, amino group, alkylamino group, dialkylamino group, alkoxy group, alkoxycarbonyl group, aminocarbonyl group, aryloxycarbonyl group, carboxyl A group, an acyl group, an aryloxy group, an aralkyl group, an acylamino group, an acyloxy group, a hydroxyl group, a cyano group, a nitro group, a sulfo group and a sulfonium group, X represents an anion, and Y represents a chalcogen atom.

【0092】これらはあくまでも、説明のために示した
具体例及び代表例であり本発明の請求の範囲を限定する
ものでは無い。
These are only specific examples and representative examples shown for the purpose of explanation, and do not limit the scope of the claims of the present invention.

【0093】正孔注入層5に用いられる正孔輸送能を有
する正孔注入化合物の具体例としては、前記一般式によ
り表せられる有機化合物以外にトリアゾール誘導体(米
国特許3,112,197号などに記載のもの)、オキサジアゾ
ール誘導体(米国特許3,189,447号などに記載のも
の)、イミダゾール誘導体(特公昭37-16096号などに記
載のもの)、ポリアリールアルカン誘導体(米国特許3,
615,402号,同3,820,989号,同3,542,544号,特公昭45-
555号,同51-10983号,特開昭51-93224号,同55-17105
号,同56-4148号,同55-108667号,同56-36656号,同55
-156953号などに記載のもの)、ピラゾリン誘導体及び
ピラゾロン誘導体(米国特許3,180,729号,同4,278,746
号,特開昭55-88064号,同55-88065号,同49-105537
号,同55-51086号,同56-80051号,同56-88141号,同57
-45545号,同54-112637号,同55-74546号などに記載の
もの)、フェニレンジアミン誘導体(米国特許3,615,40
4号,特公昭51-10105号,同46-3712号,同47-25336号,
特開昭54-53435号,同54-110536号,同54-119925号など
に記載のもの)、アリールアミン誘導体(米国特許3,56
7,450号,同3,180,703号,同3,240,597号,同3,658,520
号,同4,232,103号,同4,175,961号,同4,012,376号,
特公昭49-35702号,同39-27577号,特開昭55-144250
号,同56-223437号,西ドイツ特許1,110,518号などに記
載のもの)、アミノ置換カルコン誘導体(米国特許3,52
6,501号などに記載のもの)、オキサゾール誘導体(米
国特許3,257,203号などに記載のもの)、スチリルアン
トラセン誘導体(特開昭56-46234号などに記載のも
の)、フルオレノン誘導体(特開昭54-110837号などに
記載のもの)、ヒドラゾン誘導体(米国特許3,717,462
号,特開昭54-59143号,同55-52063号,同55-52064号,
同55-46760号,同55-85495号,同57-148749号,特開平3
-136059号,同3-138654号などに記載のもの)、スチル
ベン誘導体(特開昭61-210363号,同61-228451号,同61
-14642号,同61-72255号,同62-47646号,同62-36674
号,同62-10652号,同62-30255号,同60-934454号,同6
0-94462号,同60-174749号,同60-175052号,同63-1496
52,特開平1-173034号,同1-200262号などに記載のも
の)、ポリフィリン化合物(米国特許3,935,031号,同
4,356,429号,特開昭63-295695号,特開平2-12795号な
どに記載のもの)、芳香族第三級アミン化合物及びスチ
リルアミン化合物(米国特許4,127,412号,特開昭53-27
033号,同54-58445号,同54-149634号,同54-64299号,
同55-79450号,同55-144250号,同56-119132号,同61-2
95558号,同61-98353号,同63-295695号,特開平1-2433
93号,同3-111485号などに記載のもの)、ブタジエン化
合物(特開平3-111484号などに記載のもの)、ポリスチ
レン誘導体(特開平3-95291号などに記載のもの)、ヒ
ドラゾン誘導体(特開平3-137187号などに記載のも
の)、トリフェニルメタン誘導体、テトラフェニルベン
ジン誘導体(特開平3-54289号などに記載の化合物)な
どを使用することができるが、特に好ましくは、ポリフ
ィリン化合物、芳香族第三級アミン化合物及びスチリル
アミン化合物である。これらの化合物の代表例として、
次に示すものが挙げられる。
Specific examples of the hole-injecting compound having a hole-transporting ability used in the hole-injecting layer 5 include triazole derivatives (described in US Pat. No. 3,112,197) in addition to the organic compound represented by the above general formula. , Oxadiazole derivatives (described in US Pat. No. 3,189,447, etc.), imidazole derivatives (described in Japanese Patent Publication No. 37-16096, etc.), polyarylalkane derivatives (US Pat.
615,402, 3,820,989, 3,542,544, Japanese Patent Publication No. 45-
555, 51-10983, JP-A-51-93224, 55-17105
No. 56, No. 56-4148, No. 55-108667, No. 56-36656, No. 55.
-156953), pyrazoline derivatives and pyrazolone derivatives (US Pat. Nos. 3,180,729 and 4,278,746).
No. 55/88064, No. 55-88065, No. 49-105537
No. 55, No. 55-51086, No. 56-80051, No. 56-88141, No. 57.
-45545, 54-112637, 55-74546, etc.), phenylenediamine derivatives (US Pat. No. 3,615,40)
No. 4, Japanese Patent Publication No. 51-10105, No. 46-3712, No. 47-25336,
JP-A-54-53435, JP-A-54-110536, JP-A-54-119925, etc.), arylamine derivatives (US Pat. No. 3,56,56)
7,450, 3,180,703, 3,240,597, 3,658,520
Issue 4,232,103, Issue 4,175,961, Issue 4,012,376,
JP-B-49-35702, JP-B-39-27577, JP-A-55-144250
Nos. 56-223437, West German Patent 1,110,518, etc.), amino-substituted chalcone derivatives (US Pat. No. 3,52)
6,501), oxazole derivatives (described in US Pat. No. 3,257,203), styrylanthracene derivatives (described in JP-A-56-46234), fluorenone derivatives (JP-A-54-110837). , Hydrazone derivatives (US Pat. No. 3,717,462)
JP, 54-59143, 55-52063, 55-52064,
55-46760, 55-85495, 57-148749, JP-A-3.
-136059, 3-138654, etc.), stilbene derivatives (JP-A 61-210363, 61-228451, 61)
-14642, 61-72255, 62-47646, 62-36674
No. 62, No. 62-10652, No. 62-30255, No. 60-934454, No. 6
0-94462, 60-174749, 60-175052, 63-1496
52, those described in JP-A Nos. 1-173034 and 1-200262, etc.), porphyrin compounds (US Pat. No. 3,935,031,
4,356,429, JP-A-63-295695, JP-A-2-12795, etc.), aromatic tertiary amine compounds and styrylamine compounds (US Pat. No. 4,127,412, JP-A-53-27).
033, 54-58445, 54-149634, 54-64299,
55-79450, 55-144250, 56-119132, 61-2
No. 95558, No. 61-98353, No. 63-295695, JP-A 1-2433
Nos. 93, 3-111485, etc.), butadiene compounds (those described in JP-A-3-111484, etc.), polystyrene derivatives (those described in JP-A-3-95291, etc.), hydrazone derivatives ( (Such as those described in JP-A-3-137187), triphenylmethane derivatives, tetraphenylbenzine derivatives (compounds described in JP-A-3-54289, etc.) and the like can be used, but porphyrin compounds are particularly preferable. , Aromatic tertiary amine compounds and styrylamine compounds. As typical examples of these compounds,
The following are listed.

【0094】[0094]

【化55】 [Chemical 55]

【0095】[0095]

【化56】 [Chemical 56]

【0096】[0096]

【化57】 [Chemical 57]

【0097】[0097]

【化58】 [Chemical 58]

【0098】[0098]

【化59】 [Chemical 59]

【0099】[0099]

【化60】 [Chemical 60]

【0100】[0100]

【化61】 [Chemical formula 61]

【0101】[0101]

【化62】 [Chemical formula 62]

【0102】[0102]

【化63】 [Chemical 63]

【0103】上記代表例中、Rはそれぞれ独立に、水素
原子、ハロゲン原子、置換若しくは無置換の続記5つの
基;アルキル基、複素環式基、アリール基、不飽和鎖式
炭化水素から誘導された1価の基、窒素2原子以上を含
む基、又はスチリル基、アニシル基、アミノ基、アルキ
ルアミノ基、ジアルキルアミノ基、アルコキシ基、アル
コキシカルボニル基、アミノカルボニル基、アリールオ
キシカルボニル基、カルボキシル基、アシル基、アリー
ルオキシル基、アラルキル基、アシルアミノ基、アシル
オキシル基、水酸基、シアノ基、ニトロ基、スルホ基及
びスルホニウム基を表し、nは1以上の整数を表し、ま
たMは金属原子を表す。
In the above representative examples, each R is independently derived from a hydrogen atom, a halogen atom, a substituted or unsubstituted five groups described below; an alkyl group, a heterocyclic group, an aryl group, and an unsaturated chain hydrocarbon. Monovalent group, group containing two or more nitrogen atoms, or styryl group, anisyl group, amino group, alkylamino group, dialkylamino group, alkoxy group, alkoxycarbonyl group, aminocarbonyl group, aryloxycarbonyl group, carboxyl Group, acyl group, aryloxyl group, aralkyl group, acylamino group, acyloxyl group, hydroxyl group, cyano group, nitro group, sulfo group and sulfonium group, n represents an integer of 1 or more, and M represents a metal atom. Represent

【0104】これらはあくまでも、説明のために示した
具体例及び代表例であり本発明の請求の範囲を限定する
ものでは無い。
These are only specific examples and representative examples shown for the purpose of explanation, and do not limit the scope of the claims of the present invention.

【0105】電子注入層6に用いられる電子輸送能を有
する電子注入化合物の具体例としては、前記一般式によ
り表せられる有機化合物以外にニトロ置換フルオレノン
誘導体チオピランジオキサイド誘導体、ジフェキノン誘
導体(「Polymer Preprints、Japan,vol.37,No3,P681,
(1988)」,特開平3-152184号などに記載のもの)、ペリ
レンテトラカルボキシル誘導体(「Jpn.Journal of App
lied Physics,vol.27,No2,L269(1988)」「Bull.Chem.So
c.Jpn.,vol.25,L411(1952)」などに記載のもの)アント
ラキノジメタン誘導体(特開昭57-149259号,同58-5545
0号,同61-225151号,同61-133750号,同63-104061号な
どに記載のもの)、フレオレニリデンメタン誘導体(特
開昭60-69657号,同61-143764号,同61-148159号などに
記載のもの)、アントロン誘導体(特開昭61-225151
号,同61-233750号などに記載のもの)、オキサジアゾ
ール誘導体(特開平3-79692号などに記載のもの)、ペ
リノン誘導体(特開平2-289676号などに記載のもの)、
キノリン錯体誘導体などの化合物を使用することができ
る。これらの化合物の代表例として次に示すものが挙げ
られる。
Specific examples of the electron injecting compound having an electron transporting ability used in the electron injecting layer 6 include, in addition to the organic compound represented by the above general formula, a nitro-substituted fluorenone derivative, a thiopyrandioxide derivative, a diphequinone derivative (“Polymer Preprints”). , Japan, vol.37, No3, P681,
(1988) ", JP-A-3-152184, etc.), perylene tetracarboxyl derivative (" Jpn. Journal of App
lied Physics, vol.27, No2, L269 (1988) '' Bull.Chem.So
c. Jpn., vol. 25, L411 (1952) ”, etc.) Anthraquinodimethane derivative (JP-A-57-149259, 58-5545)
No. 0, No. 61-225151, No. 61-133750, No. 63-104061, etc.), phenylenylidene methane derivative (JP-A-60-69657, No. 61-143764, No. 61- No. 148159, etc.), anthrone derivative (JP-A-61-225151)
No. 61-233750), oxadiazole derivatives (such as those described in JP-A-3-79692), perinone derivatives (such as those described in JP-A-2-289676),
Compounds such as quinoline complex derivatives can be used. The following are typical examples of these compounds.

【0106】[0106]

【化64】 [Chemical 64]

【0107】[0107]

【化65】 [Chemical 65]

【0108】[0108]

【化66】 [Chemical 66]

【0109】[0109]

【化67】 [Chemical 67]

【0110】上記代表例中、Rはそれぞれ独立に、水素
原子、ハロゲン原子、置換基を有する若しくは有しない
アルキル基、置換基を有する若しくは有しない複素環式
基、置換基を有する若しくは有しないアリール基、置換
基を有する若しくは有しない不飽和鎖式炭化水素から誘
導された1価の基、置換基を有する若しくは有しない窒
素2原子以上を含む基、スチリル基、アニシル基、アミ
ノ基、アルキルアミノ基、ジアルキルアミノ基、アルコ
キシ基、アルコキシカルボニル基、アミノカルボニル
基、アリールオキシカルボニル基、カルボキシル基、ア
シル基、アリールオキシル基、アラルキル基、アシルア
ミノ基、アシルオキシル基、水酸基、シアノ基、ニトロ
基、スルホ基及びスルホニウム基を表し、またMは金属
原子を表す。
In the above representative examples, each R is independently a hydrogen atom, a halogen atom, an alkyl group having or not having a substituent, a heterocyclic group having or not having a substituent, an aryl having or not having a substituent. Group, monovalent group derived from unsaturated chain hydrocarbon with or without substituent, group containing two or more nitrogen atoms with or without substituent, styryl group, anisyl group, amino group, alkylamino Group, dialkylamino group, alkoxy group, alkoxycarbonyl group, aminocarbonyl group, aryloxycarbonyl group, carboxyl group, acyl group, aryloxyl group, aralkyl group, acylamino group, acyloxyl group, hydroxyl group, cyano group, nitro group, It represents a sulfo group and a sulfonium group, and M represents a metal atom.

【0111】これらはあくまでも、説明のために示した
具体例及び代表例であり本発明の請求の範囲を限定する
ものでは無い。
These are only specific examples and representative examples shown for the purpose of explanation, and do not limit the scope of the claims of the present invention.

【0112】[0112]

【実施例】次に実施例によって本発明を具体的に説明す
る。
EXAMPLES The present invention will be described in detail with reference to examples.

【0113】実施例1 陽極としてガラス上にITOを150nm成膜した基板(日
本板硝子株式会社製P110E-H-PS)を所望の形にパ
ターニングを行った後、アルミナ研磨剤にて水とともに
研磨を行った。水洗後、水超音波洗浄10分間2回、アセ
トン超音波洗浄10分間2回、イソプロピルアルコール超
音波洗浄10分間2回行い、さらに90℃にて熱風乾燥を行
った。
Example 1 A substrate (P110E-H-PS manufactured by Nippon Sheet Glass Co., Ltd.) having a 150 nm ITO film formed on glass as an anode was patterned into a desired shape and then polished with water using an alumina abrasive. went. After washing with water, ultrasonic washing with water was performed twice for 10 minutes, ultrasonic washing with acetone for 10 minutes twice, and ultrasonic washing with isopropyl alcohol for 10 minutes twice, followed by hot air drying at 90 ° C.

【0114】つぎにこの例示化合物(II−72)スチリル
化合物をタングステンボード(日本バックスメタル株式
会社製SF208)に入れ、8.0×10-7Torrの真空条件下で
0.2nm/secの成膜速度で真空蒸着し81nmの正孔注入層を
形成した。
Next, the exemplified compound (II-72) styryl compound was put into a tungsten board (SF208 manufactured by Nippon Bucks Metal Co., Ltd.), and under a vacuum condition of 8.0 × 10 −7 Torr.
Vacuum deposition was performed at a film formation rate of 0.2 nm / sec to form a hole injection layer of 81 nm.

【0115】次いで、真空条件を破ることなく化合物
(I−1)をモリブテンボート(日本バックスメタル株
式会社製SS-1-9)に入れ、8.0×10-7Torrの真空条
件下で0.2nm/secの成膜速度で63nmの発光層を積層蒸着
した。
Next, the compound (I-1) was placed in a molybdenum boat (SS-1-9, manufactured by Nippon Bucks Metal Co., Ltd.) without breaking the vacuum condition, and 0.2 nm / 0.2 nm / 8.0 × 10 −7 Torr vacuum condition was added. A 63 nm light emitting layer was laminated and vapor deposited at a film formation rate of sec.

【0116】さらにこの上に真空条件を破ることなくM
g:Ag(10:1原子比合金)を500nm真空蒸着し、陰
極を形成した。
Furthermore, without breaking vacuum conditions, M
g: Ag (10: 1 atomic ratio alloy) was vacuum-deposited at 500 nm to form a cathode.

【0117】このようにして得られた有機薄膜エレクト
ロルミネッセンス素子に外部電源を接続し17V直流電圧
の印加によって、最大輝度63.9cd/m2の発行が得られ
た。また温度23℃乾燥窒素ガス雰囲気下で17V直流電圧
印加による連続点灯を行ったところ、輝度の半減する時
間は1589時間であった。
An external power source was connected to the organic thin film electroluminescence device thus obtained, and a 17 V DC voltage was applied to obtain an emission of maximum brightness of 63.9 cd / m 2 . Further, when continuous lighting was performed by applying a DC voltage of 17 V in a dry nitrogen gas atmosphere at a temperature of 23 ° C., the time required to reduce the luminance by half was 1589 hours.

【0118】実施例2 陽極としてガラス上にITOを150nm成膜した基板(日
本板硝子株式会社製P110E-H-PS)を所望の形にパ
ターニングを行った後、アルミナ研磨剤にて水とともに
研磨を行った。水洗後、水超音波洗浄10分間2回、アセ
トン超音波洗浄10分間2回、イソプロピルアルコール超
音波洗浄10分間2回行い、さらに90℃にて熱風乾燥を行
った。
Example 2 A substrate (P110E-H-PS manufactured by Nippon Sheet Glass Co., Ltd.) having a 150 nm ITO film formed on glass as an anode was patterned into a desired shape and then polished with water using an alumina abrasive. went. After washing with water, ultrasonic washing with water was performed twice for 10 minutes, ultrasonic washing with acetone for 10 minutes twice, and ultrasonic washing with isopropyl alcohol for 10 minutes twice, followed by hot air drying at 90 ° C.

【0119】つぎにこの基板に例示化合物(II−19)ス
チリル化合物をタングステンボート(日本バックスメタ
ル株式会社製SF208)に入れ、8.0×10-7Torrの真空条
件下で0.2nm/secの成膜速度で真空蒸着し79nmの正孔注
入層を形成した。
Next, the styryl compound of Exemplified Compound (II-19) was placed on this substrate in a tungsten boat (SF208 manufactured by Nippon Bucks Metal Co., Ltd.) to form a film at 0.2 nm / sec under a vacuum condition of 8.0 × 10 −7 Torr. It vacuum-deposited at a rate to form a hole injection layer of 79 nm.

【0120】次いで、真空条件を破ることなく化合物
(I−1)をモリブテンボート(日本バックスメタル株
式会社製SS-1-9)に入れ、8.0×10-7Torrの真空条
件下で0.2nm/secの成膜速度で64nmの発光層を積層蒸着
した。
Then, the compound (I-1) was placed in a molybdenum boat (SS-1-9 manufactured by Nippon Bucks Metal Co., Ltd.) without breaking the vacuum condition, and 0.2 nm / 0.2 nm / 8.0 × 10 −7 Torr vacuum condition was added. A 64 nm light emitting layer was laminated and deposited at a film forming rate of sec.

【0121】さらにこの上に真空条件下を破ることなく
Mg:Ag(10:1原子比合金)を500nm真空蒸着し、
陰極を形成した。
Further, Mg: Ag (alloy of 10: 1 atomic ratio) was vacuum-deposited on this to 500 nm without breaking vacuum conditions,
A cathode was formed.

【0122】このようにして得られた有機薄膜エレクト
ロルミネッセンス素子に外部電源を接続し18V直流電圧
の印加によって、最大輝度58.0cd/m2の発光が得られ
た。
An external power source was connected to the thus obtained organic thin film electroluminescence device, and a voltage of 18 V DC was applied to obtain light emission with a maximum brightness of 58.0 cd / m 2 .

【0123】また温度23℃乾燥窒素ガス雰囲気下で18V
直流電圧印加による連続点灯を行ったところ、輝度の半
減する時間は1432時間であった。
Further, the temperature was 23 ° C., and 18 V under a dry nitrogen gas atmosphere.
When continuous lighting was performed by applying a DC voltage, the time required for the luminance to halve was 1432 hours.

【0124】実施例3 陽極としてガラス上にITOを150nm成膜した基板(日
本板硝子株式会社製P110E-H-PS)を所望の形にパ
ターニングを行った後、アルミナ研磨剤にて水とともに
研磨を行った。水洗後、水超音波洗浄10分間2回、アセ
トン超音波洗浄10分間2回、イソプロピルアルコール超
音波洗浄10分間2回行い、さらに90℃にて熱風乾燥を行
った。
Example 3 A substrate (P110E-H-PS manufactured by Nippon Sheet Glass Co., Ltd.) having a 150 nm ITO film formed on glass as an anode was patterned into a desired shape, and then polished with water using an alumina abrasive. went. After washing with water, ultrasonic washing with water was performed twice for 10 minutes, ultrasonic washing with acetone for 10 minutes twice, and ultrasonic washing with isopropyl alcohol for 10 minutes twice, followed by hot air drying at 90 ° C.

【0125】つぎにこの基板に化合物(II−48)スチリ
ル化合物をタングステンボート(日本バックスメタル株
式会社製SF208)に入れ、8.0×10-7Torrの真空条件下
で0.2nm/secの成膜速度で真空蒸着し80nmの正孔注入層
を形成した。
Next, the compound (II-48) styryl compound was placed on this substrate in a tungsten boat (SF208 manufactured by Nippon Bucks Metal Co., Ltd.), and the film formation rate was 0.2 nm / sec under a vacuum condition of 8.0 × 10 −7 Torr. Vacuum deposition was performed to form an 80 nm hole injection layer.

【0126】次いで、真空条件を破ることなく化合物
(I−1)をモリブテンボート(日本バックスメタル株
式会社製SS-1-9)に入れ、8.0×10-7Torrの真空条
件下で0.2nm/secの成膜速度で62nmの発光層を積層蒸着
した。
[0126] Next, the compound without breaking the vacuum conditions (I-1) put in a molybdenum boat (Japan Bucks made of metal, Ltd. SS-1-9), 0.2nm under vacuum conditions of 8.0 × 10 -7 Torr / A 62 nm light emitting layer was laminated and vapor deposited at a film formation rate of sec.

【0127】さらにこの上に真空条件を破ることなくM
g:Ag(10:1原子比合金)を500nm真空蒸着し、陰
極を形成した。
Furthermore, on top of this, without breaking vacuum conditions, M
g: Ag (10: 1 atomic ratio alloy) was vacuum-deposited at 500 nm to form a cathode.

【0128】このようにして得られた有機薄膜エレクト
ロルミネッセンス素子に外部電源を接続し19V直流電圧
の印加によって、最大輝度57.7cd/m2の発光が得られ
た。
An external power source was connected to the thus obtained organic thin film electroluminescence device, and a 19 V DC voltage was applied, whereby light emission with a maximum brightness of 57.7 cd / m 2 was obtained.

【0129】また温度23℃乾燥窒素ガス雰囲気下で19V
直流電圧印加による連続点灯を行ったところ、輝度の半
減する時間は1413時間であった。
Further, the temperature was 23 V and 19 V in a dry nitrogen gas atmosphere.
When continuous lighting was performed by applying a DC voltage, the time required for the luminance to decrease by half was 1413 hours.

【0130】実施例4 陽極としてガラス上にITOを150nm成膜した基板(日
本板硝子株式会社製P110E-H-PS)を所望の形にパ
ターニングを行った後、アルミナ研磨剤にて水とともに
研磨を行った。水洗後、水超音波洗浄10分間2回、アセ
トン超音波洗浄10分間2回、イソプロピルアルコール超
音波洗浄10分間2回行い、さらに90℃にて熱風乾燥を行
った。
Example 4 A substrate (P110E-H-PS manufactured by Nippon Sheet Glass Co., Ltd.) having a 150 nm ITO film formed on glass as an anode was patterned into a desired shape, and then polished with water using an alumina abrasive. went. After washing with water, ultrasonic washing with water was performed twice for 10 minutes, ultrasonic washing with acetone for 10 minutes twice, and ultrasonic washing with isopropyl alcohol for 10 minutes twice, followed by hot air drying at 90 ° C.

【0131】つぎにこの基板に化合物(II−91)スチリ
ル化合物をタングステンボート(日本バックスメタル株
式会社製SF208)に入れ、8.0×10-7Torrの真空条件下
で0.2nm/secの成膜速度で真空蒸着し80nmの正孔注入層
を形成した。
Next, the compound (II-91) styryl compound was placed on this substrate in a tungsten boat (SF208 manufactured by Nippon Bucks Metal Co., Ltd.), and the film formation rate was 0.2 nm / sec under a vacuum condition of 8.0 × 10 −7 Torr. Vacuum deposition was performed to form an 80 nm hole injection layer.

【0132】次いで、真空条件を破ることなく化合物
(I−1)をモリブテンボート(日本バックスメタル株
式会社製SS-1-9)に入れ、8.0×10-7Toorの真空条
件下で0.2nm/secの成膜速度で62nmの発光層を積層蒸着
した。
Then, the compound (I-1) was placed in a molybdenum boat (SS-1-9, manufactured by Nippon Bucks Metal Co., Ltd.) without breaking the vacuum condition, and 0.2 nm / 0.2 nm / under a vacuum condition of 8.0 × 10 −7 Toor. A 62 nm light emitting layer was laminated and vapor deposited at a film formation rate of sec.

【0133】さらにこの上に真空条件を破ることなくM
g:Ag(10:1原子比合金)を500nm真空蒸着し、陰
極を形成した。
Furthermore, on top of this, M
g: Ag (10: 1 atomic ratio alloy) was vacuum-deposited at 500 nm to form a cathode.

【0134】このようにして得られた有機薄膜エレクト
ロルミネッセンス素子に外部電源を接続し19V直流電圧
の印加によって、最大輝度57.6cd/m2の発光が得られ
た。
An external power source was connected to the thus obtained organic thin film electroluminescent element, and by applying a DC voltage of 19 V, light emission with a maximum brightness of 57.6 cd / m 2 was obtained.

【0135】また温度23℃乾燥窒素ガス雰囲気下で19V
直流電圧印加による連続点灯を行ったところ、輝度の半
減する時間は1487時間であった。
Further, the temperature was 23 V and 19 V in a dry nitrogen gas atmosphere.
When continuous lighting was performed by applying a DC voltage, the time required for the luminance to halve was 1487 hours.

【0136】実施例5 陽極としてガラス上にITOを150nm成膜した基板(日
本板硝子株式会社製P110E-H-PS)を所望の形にパ
ターニングを行った後、アルミナ研磨剤にて水とともに
研磨を行った。水洗後、水超音波洗浄10分間2回、アセ
トン超音波洗浄10分間2回、イソプロピルアルコール超
音波洗浄10分間2回行い、さらに90℃にて熱風乾燥を行
った。
Example 5 A substrate (P110E-H-PS manufactured by Nippon Sheet Glass Co., Ltd.) having a 150 nm ITO film formed on glass as an anode was patterned into a desired shape and then polished with water using an alumina abrasive. went. After washing with water, ultrasonic washing with water was performed twice for 10 minutes, ultrasonic washing with acetone for 10 minutes twice, and ultrasonic washing with isopropyl alcohol for 10 minutes twice, followed by hot air drying at 90 ° C.

【0137】つぎにこの基板に例示化合物(II−14)ス
チリル化合物をタングステンボート(日本バックスメタ
ル株式会社製SF208)に入れ、8.0×10-7Torrの真空条
件下で0.2nm/secの成膜速度で真空蒸着し80nmの正孔注
入層を形成した。
Next, the styryl compound of Exemplified Compound (II-14) was placed on this substrate in a tungsten boat (SF208 manufactured by Nippon Bucks Metal Co., Ltd.) to form a film at 0.2 nm / sec under a vacuum condition of 8.0 × 10 −7 Torr. It vacuum-deposited at a rate to form a hole injection layer of 80 nm.

【0138】次いで、真空条件を破ることなく化合物
(I−1)をモリブテンボート(日本バックスメタル株
式会社製SS-1-9)に入れ、8.0×10-7Torrの真空条
件下で0.2nm/secの成膜速度で63nmの発光層を積層蒸着
した。
[0138] Next, the compound without breaking the vacuum conditions (I-1) put in a molybdenum boat (Japan Bucks made of metal, Ltd. SS-1-9), 0.2nm under vacuum conditions of 8.0 × 10 -7 Torr / A 63 nm light emitting layer was laminated and vapor deposited at a film formation rate of sec.

【0139】さらにこの上に真空条件を破ることなくM
g:Ag(10:1原子比合金)を500nm真空蒸着し、陰
極を形成した。
Furthermore, on top of this, M
g: Ag (10: 1 atomic ratio alloy) was vacuum-deposited at 500 nm to form a cathode.

【0140】このようにして得られた有機薄膜エレクト
ロルミネッセンス素子に外部電源を接続し19V直流電圧
の印加によって、最大輝度54.7cd/m2の発光が得られ
た。
An external power source was connected to the thus obtained organic thin film electroluminescent element, and a 19 V DC voltage was applied, whereby light emission with a maximum luminance of 54.7 cd / m 2 was obtained.

【0141】また温度23℃乾燥窒素ガス雰囲気下で19V
直流電圧印加による連続点灯を行ったところ、輝度の半
減する時間は1404時間であった。
Also, at a temperature of 23 ° C. in a dry nitrogen gas atmosphere, 19 V
When continuous lighting was performed by applying a DC voltage, the time required for the luminance to halve was 1404 hours.

【0142】実施例6 陽極としてガラス上にITOを150nm成膜した基板(日
本板硝子株式会社製P110E-H-PS)を所望の形にパ
ターニングを行った後、アルミナ研磨剤にて水とともに
研磨を行った。水洗後、水超音波洗浄10分間2回、アセ
トン超音波洗浄10分間2回、イソプロピルアルコール超
音波洗浄10分間2回行い、さらに90℃にて熱風乾燥を行
った。
Example 6 A substrate (P110E-H-PS manufactured by Nippon Sheet Glass Co., Ltd.) having a 150 nm ITO film formed on glass as an anode was patterned into a desired shape and then polished with water using an alumina abrasive. went. After washing with water, ultrasonic washing with water was performed twice for 10 minutes, ultrasonic washing with acetone for 10 minutes twice, and ultrasonic washing with isopropyl alcohol for 10 minutes twice, followed by hot air drying at 90 ° C.

【0143】つぎにこの基板に例示化合物(II−84)ス
チリル化合物をタングステンボート(日本バックスメタ
ル株式会社製SF208)に入れ、8.0×10-7Torrの真空条
件下で0.2nm/secの成膜速度で真空蒸着し81nmの正孔注
入層を形成した。
Next, the styryl compound of Exemplified Compound (II-84) was placed on this substrate in a tungsten boat (SF208 manufactured by Nippon Bucks Metal Co., Ltd.) to form a film at 0.2 nm / sec under a vacuum condition of 8.0 × 10 −7 Torr. It vacuum-deposited at a rate to form a hole injection layer of 81 nm.

【0144】次いで、真空条件を破ることなく化合物
(I−1)をモリブテンボート(日本バックスメタル株
式会社製SS-1-9)に入れ、8.0×10-7Torrの真空条
件下で0.2nm/secの成膜速度で63nmの発光層を積層蒸着
した。
[0144] Next, the compound without breaking the vacuum conditions (I-1) put in a molybdenum boat (Japan Bucks made of metal, Ltd. SS-1-9), 0.2nm under vacuum conditions of 8.0 × 10 -7 Torr / A 63 nm light emitting layer was laminated and vapor deposited at a film formation rate of sec.

【0145】さらにこの上に真空条件を破ることなくM
g:Ag(10:1原子比合金)を500nm真空蒸着し、陰
極を形成した。
Furthermore, on top of this, without breaking vacuum conditions, M
g: Ag (10: 1 atomic ratio alloy) was vacuum-deposited at 500 nm to form a cathode.

【0146】このようにして得られた有機薄膜エレクト
ロルミネッセンス素子に外部電源を接続し18V直流電圧
の印加によって、最大輝度60.7cd/m2の発光が得られ
た。
An external power source was connected to the thus obtained organic thin film electroluminescence device, and a voltage of 18 V was applied to it to obtain light emission with a maximum brightness of 60.7 cd / m 2 .

【0147】また温度23℃乾燥窒素ガス雰囲気下で17V
直流電圧印加による連続点灯を行ったところ、輝度の半
減する時間は1532時間であった。
At a temperature of 23 ° C. in a dry nitrogen gas atmosphere, 17 V
When continuous lighting was performed by applying a DC voltage, the time required for the luminance to halve was 1532 hours.

【0148】実施例7 陽極としてガラス上にITOを150nm成膜した基板(日
本板硝子株式会社製P110E-H-PS)を所望の形にパ
ターニングを行った後、アルミナ研磨剤にて水とともに
研磨を行った。水洗後、水超音波洗浄10分間2回、アセ
トン超音波洗浄10分間2回、イソプロピルアルコール
超音波洗浄10分間2回行い、さらに90℃にて熱風乾燥
を行った。
Example 7 A substrate (P110E-H-PS, manufactured by Nippon Sheet Glass Co., Ltd.) having a 150 nm ITO film formed on glass as an anode was patterned into a desired shape and then polished with water using an alumina abrasive. went. After washing with water, ultrasonic washing with water was performed twice for 10 minutes, ultrasonic washing with acetone for 10 minutes twice, and ultrasonic washing with isopropyl alcohol for 10 minutes twice, followed by hot air drying at 90 ° C.

【0149】つぎにこの基板に例示化合物(II−72)ス
チリル化合物をタングステンボート(日本バックスメタ
ル株式会社製SF208)に入れ、8.0×10-7Torrの真空条
件下で0.2nm/secの成膜速度で真空蒸着し82nmの正孔注
入層を形成した。
Next, the exemplified compound (II-72) styryl compound was put on this substrate in a tungsten boat (SF208 manufactured by Nippon Bucks Metal Co., Ltd.) to form a film at 0.2 nm / sec under a vacuum condition of 8.0 × 10 −7 Torr. It vacuum-deposited at a rate to form a hole injection layer of 82 nm.

【0150】次いで、真空条件を破ることなく化合物
(I−1)をモリブテンボート(日本バックスメタル株
式会社製SS-1-9)に入れ、8.0×10-7Torrの真空条
件下で0.2nm/secの成膜速度で62nmの発光層を積層蒸着
した。
Next, the compound (I-1) was placed in a molybdenum boat (SS-1-9 manufactured by Nippon Bucks Metal Co., Ltd.) without breaking the vacuum condition, and 0.2 nm / 0.2 nm / cm under a vacuum condition of 8.0 × 10 -7 Torr. A 62 nm light emitting layer was laminated and vapor deposited at a film formation rate of sec.

【0151】さらにこの上に真空条件を破ることなくM
g:Ag(10:1原子比合金)を500nm真空蒸着し、陰
極を形成した。
Furthermore, on this, without breaking vacuum conditions, M
g: Ag (10: 1 atomic ratio alloy) was vacuum-deposited at 500 nm to form a cathode.

【0152】このようにして得られた有機薄膜エレクト
ロルミネッセンス素子に外部電源を接続し18V直流電圧
の印加によって、最大輝度55.1cd/m2の発光が得られ
た。
An external power source was connected to the thus obtained organic thin film electroluminescence device, and a voltage of 18 V was applied to it to obtain light emission with a maximum brightness of 55.1 cd / m 2 .

【0153】また温度23℃乾燥窒素ガス雰囲気下で18V
直流電圧印加による連続点灯を行ったところ、輝度の半
減する時間は1529時間であった。
Also, the temperature was 18 V in a dry nitrogen gas atmosphere at 23 ° C.
When continuous lighting was performed by applying a DC voltage, the time required for the luminance to decrease by half was 1529 hours.

【0154】実施例8 陽極としてガラス上にITOを150nm成膜した基板(日
本板硝子株式会社製P110E-H-PS)を所望の形にパ
ターニングを行った後、アルミナ研磨剤にて水とともに
研磨を行った。水洗後、水超音波洗浄10分間2回、アセ
トン超音波洗浄10分間2回、イソプロピルアルコール超
音波洗浄10分間2回行い、さらに90℃にて熱風乾燥を行
った。
Example 8 A substrate (P110E-H-PS manufactured by Nippon Sheet Glass Co., Ltd.) having a 150 nm ITO film formed on glass as an anode was patterned into a desired shape and then polished with water using an alumina abrasive. went. After washing with water, ultrasonic washing with water was performed twice for 10 minutes, ultrasonic washing with acetone for 10 minutes twice, and ultrasonic washing with isopropyl alcohol for 10 minutes twice, followed by hot air drying at 90 ° C.

【0155】つぎにこの基板に例示化合物(II−27)ス
チリル化合物をタングステンボート(日本バックスメタ
ル株式会社製SF208)に入れ、8.0×10-7Torrの真空条
件下で0.2nm/secの成膜速度で真空蒸着し81nmの正孔注
入層を形成した。
Next, a styryl compound of Exemplified Compound (II-27) was placed on this substrate in a tungsten boat (SF208 manufactured by Nippon Bucks Metal Co., Ltd.) to form a film at 0.2 nm / sec under a vacuum condition of 8.0 × 10 −7 Torr. It vacuum-deposited at a rate to form a hole injection layer of 81 nm.

【0156】次いで、真空条件を破ることなく化合物
(I−28)をモリブテンボート(日本バックスメタル株
式会社製SS-1-9)に入れ、8.0×10-7Torrの真空条
件下で0.2nm/secの成膜速度で63nmの発光層を積層蒸着
した。
Next, the compound (I-28) was placed in a molybdenum boat (SS-1-9 manufactured by Nippon Bucks Metal Co., Ltd.) without breaking the vacuum condition, and 0.2 nm / 0.2 nm / 8.0 × 10 −7 Torr vacuum condition was applied. A 63 nm light emitting layer was laminated and vapor deposited at a film formation rate of sec.

【0157】さらにこの上に真空条件を破ることなくM
g:Ag(10:1原子比合金)を500nm真空蒸着し、陰
極を形成した。
[0157] Furthermore, without breaking vacuum conditions, M
g: Ag (10: 1 atomic ratio alloy) was vacuum-deposited at 500 nm to form a cathode.

【0158】このようにして得られた有機薄膜エレクト
ロルミネッセンス素子に外部電源を接続し22V直流電圧
の印加によって、最大輝度48.3cd/m2の発光が得られ
た。
An external power source was connected to the thus obtained organic thin film electroluminescence device, and by applying a DC voltage of 22 V, light emission with a maximum brightness of 48.3 cd / m 2 was obtained.

【0159】また温度23℃乾燥窒素ガス雰囲気下で22V
直流電圧印加による連続点灯を行ったところ、輝度の半
減する時間は1652時間であった。
At a temperature of 23 ° C. and a dry nitrogen gas atmosphere of 22 V
When continuous lighting was performed by applying a DC voltage, the time required for the luminance to halve was 1652 hours.

【0160】実施例9 陽極としてガラス上にITOを150nm成膜した基板(日
本板硝子株式会社製P110E-H-PS)を所望の形にパ
ターニングを行った後、アルミナ研磨剤にて水とともに
研磨を行った。水洗後、水超音波洗浄10分間2回、アセ
トン超音波洗浄10分間2回、イソプロピルアルコール超
音波洗浄10分間2回行い、さらに90℃にて熱風乾燥を行
った。
Example 9 A substrate (P110E-H-PS manufactured by Nippon Sheet Glass Co., Ltd.) having a 150 nm ITO film formed on glass as an anode was patterned into a desired shape and then polished with water using an alumina abrasive. went. After washing with water, ultrasonic washing with water was performed twice for 10 minutes, ultrasonic washing with acetone for 10 minutes twice, and ultrasonic washing with isopropyl alcohol for 10 minutes twice, followed by hot air drying at 90 ° C.

【0161】つぎにこの基板に例示化合物(II−72)ス
チリル化合物をタングステンボート(日本バックスメタ
ル株式会社製SF208)に入れ、8.0×10-7Torrの真空条
件下で0.2nm/secの成膜速度で真空蒸着し80nmの正孔注
入層を形成した。
Next, the exemplified compound (II-72) styryl compound was placed on this substrate in a tungsten boat (SF208 manufactured by Nippon Bucks Metal Co., Ltd.) to form a film at 0.2 nm / sec under a vacuum condition of 8.0 × 10 −7 Torr. It vacuum-deposited at a rate to form a hole injection layer of 80 nm.

【0162】次いで、真空条件を破ることなく化合物
(I−95)をモリブテンボート(日本バックスメタル株
式会社製SS-1-9)に入れ、8.0×10-7Torrの真空条
件下で0.2nm/secの成膜速度で63nmの発光層を積層蒸着
した。
Next, the compound (I-95) was placed in a molybdenum boat (SS-1-9 manufactured by Nippon Bucks Metal Co., Ltd.) without breaking the vacuum condition, and 0.2 nm / 0.2 nm / 8.0 × 10 −7 Torr vacuum condition was added. A 63 nm light emitting layer was laminated and vapor deposited at a film formation rate of sec.

【0163】さらにこの上に真空条件を破ることなくM
g:Ag(10:1原子比合金)を500nm真空蒸着し、陰
極を形成した。
Furthermore, without breaking the vacuum condition, M
g: Ag (10: 1 atomic ratio alloy) was vacuum-deposited at 500 nm to form a cathode.

【0164】このようにして得られた有機薄膜エレクト
ロルミネッセンス素子に外部電源を接続し15V直流電圧
の印加によって、最大輝度52.4cd/m2の発光が得られ
た。
An external power source was connected to the thus obtained organic thin film electroluminescent element, and a 15 V DC voltage was applied, whereby light emission with a maximum luminance of 52.4 cd / m 2 was obtained.

【0165】また温度23℃乾燥窒素ガス雰囲気下で15V
直流電圧印加による連続点灯を行ったところ、輝度の半
減する時間は1552時間であった。
At a temperature of 23 ° C. in a dry nitrogen gas atmosphere, 15 V
When continuous lighting was performed by applying a DC voltage, the time required for the luminance to halve was 1552 hours.

【0166】実施例10 陽極としてガラス上にITOを150nm成膜した基板(日
本板硝子株式会社製P110E-H-PS)を所望の形にパ
ターニングを行った後、アルミナ研磨剤にて水とともに
研磨を行った。水洗後、水超音波洗浄10分間2回、アセ
トン超音波洗浄10分間2回、イソプロピルアルコール超
音波洗浄10分間2回行い、さらに90℃にて熱風乾燥を行
った。
Example 10 A substrate (P110E-H-PS manufactured by Nippon Sheet Glass Co., Ltd.) having a 150 nm ITO film formed on glass as an anode was patterned into a desired shape, and then polished with water using an alumina abrasive. went. After washing with water, ultrasonic washing with water was performed twice for 10 minutes, ultrasonic washing with acetone for 10 minutes twice, and ultrasonic washing with isopropyl alcohol for 10 minutes twice, followed by hot air drying at 90 ° C.

【0167】つぎにこの基板に例示化合物(II−72)を
タングステンボート(日本バックスメタル株式会社製S
F208)に入れ、8.0×10-7Torrの真空条件下で0.2nm/se
cの成膜速度で真空蒸着し80nmの正孔注入層を形成し
た。
Then, the exemplified compound (II-72) was applied to this substrate by a tungsten boat (S manufactured by Nippon Bucks Metal Co., Ltd.).
F208) and 0.2 nm / se under vacuum condition of 8.0 × 10 -7 Torr
Vacuum deposition was performed at a film formation rate of c to form a hole injection layer of 80 nm.

【0168】次いで、真空条件を破ることなく化合物
(I−96)をモリブテンボート(日本バックスメタル株
式会社製SS-1-9)に入れ、8.0×10-7Torrの真空条
件下で0.2nm/secの成膜速度で62nmの発光層を積層蒸着
した。
Next, the compound (I-96) was placed in a molybdenum boat (SS-1-9 manufactured by Nippon Bucks Metal Co., Ltd.) without breaking the vacuum condition, and 0.2 nm / 0.2 nm / 8.0 × 10 −7 Torr vacuum condition was applied. A 62 nm light emitting layer was laminated and vapor deposited at a film formation rate of sec.

【0169】さらにこの上に真空条件を破ることなくM
g:Ag(10:1原子比合金)を500nm真空蒸着し、陰
極を形成した。
Furthermore, without breaking vacuum conditions, M
g: Ag (10: 1 atomic ratio alloy) was vacuum-deposited at 500 nm to form a cathode.

【0170】このようにして得られた有機薄膜エレクト
ロルミネッセンス素子に外部電源を接続し19V直流電圧
の印加によって、最大輝度50.8cd/m2の発光が得られ
た。
An external power supply was connected to the thus obtained organic thin film electroluminescence device and a 19 V DC voltage was applied to obtain light emission with a maximum brightness of 50.8 cd / m 2 .

【0171】また温度23℃乾燥窒素ガス雰囲気下で19V
直流電圧印加による連続点灯を行ったところ、輝度の半
減する時間は1529時間であった。
Also, at a temperature of 23 ° C. in a dry nitrogen gas atmosphere, 19 V
When continuous lighting was performed by applying a DC voltage, the time required for the luminance to decrease by half was 1529 hours.

【0172】実施例11 陽極としてガラス上にITOを150nm成膜した基板(日
本板硝子株式会社製P110E-H-PS)を所望の形にパ
ターニングを行った後、アルミナ研磨剤にて水とともに
研磨を行った。水洗後、水超音波洗浄10分間2回、アセ
トン超音波洗浄10分間2回、イソプロピルアルコール超
音波洗浄10分間2回行い、さらに90℃にて熱風乾燥を行
った。
Example 11 A substrate (P110E-H-PS manufactured by Nippon Sheet Glass Co., Ltd.) having a 150 nm ITO film formed on glass as an anode was patterned into a desired shape and then polished with water using an alumina abrasive. went. After washing with water, ultrasonic washing with water was performed twice for 10 minutes, ultrasonic washing with acetone for 10 minutes twice, and ultrasonic washing with isopropyl alcohol for 10 minutes twice, followed by hot air drying at 90 ° C.

【0173】つぎにこの基板に例示化合物(II−72)を
タングステンボート(日本バックスメタル株式会社製S
F208)に入れ、8.0×10-7Torrの真空条件下で0.2nm/se
cの成膜速度で真空蒸着し81nmの正孔注入層を形成し
た。
Then, the exemplified compound (II-72) was applied to this substrate by a tungsten boat (S manufactured by Nippon Bucks Metal Co., Ltd.).
F208) and 0.2 nm / se under vacuum condition of 8.0 × 10 -7 Torr
Vacuum deposition was performed at a film formation rate of c to form an 81 nm hole injection layer.

【0174】次いで、真空条件を破ることなく化合物
(I−42)をモリブテンボート(日本バックスメタル株
式会社製SS-1-9)に入れ、8.0×10-7Torrの真空条
件下で0.2nm/secの成膜速度で63nmの発光層を積層蒸着
した。
Then, the compound (I-42) was placed in a molybdenum boat (SS-1-9 manufactured by Nippon Bucks Metal Co., Ltd.) without breaking the vacuum condition, and 0.2 nm / 0.2 nm / under a vacuum condition of 8.0 × 10 −7 Torr. A 63 nm light emitting layer was laminated and vapor deposited at a film formation rate of sec.

【0175】さらにこの上に真空条件を破ることなくM
g:Ag(10:1原子比合金)を500nm真空蒸着し、陰
極を形成した。
[0175] Furthermore, without breaking the vacuum condition, M
g: Ag (10: 1 atomic ratio alloy) was vacuum-deposited at 500 nm to form a cathode.

【0176】このようにして得られた有機薄膜エレクト
ロルミネッセンス素子に外部電源を接続し20V直流電圧
の印加によって、最大輝度50.1cd/m2の発光が得られ
た。
An external power source was connected to the thus obtained organic thin film electroluminescence device, and a 20 V DC voltage was applied, whereby light emission with a maximum brightness of 50.1 cd / m 2 was obtained.

【0177】また温度23℃乾燥窒素ガス雰囲気下で20V
直流電圧印加による連続点灯を行ったところ、輝度の半
減する時間は1501時間であった。
At a temperature of 23 ° C. in a dry nitrogen gas atmosphere, 20 V
When continuous lighting was performed by applying a DC voltage, the time required for the luminance to decrease by half was 1501 hours.

【0178】比較例(1) 陽極としてガラス上にITOを150nm成膜した基板(日
本板硝子株式会社製P110E-H-PS)を所望の形にパ
ターニングを行った後、アルミナ研磨剤にて水とともに
研磨を行った。水洗後、水超音波洗浄10分間2回、アセ
トン超音波洗浄10分間2回、イソプロピルアルコール超
音波洗浄10分間2回行い、さらに90℃にて熱風乾燥を行
った。
Comparative Example (1) A substrate (P110E-H-PS manufactured by Nippon Sheet Glass Co., Ltd.) having a 150 nm ITO film formed on glass as an anode was patterned into a desired shape and then treated with water using an alumina abrasive. Polished. After washing with water, ultrasonic washing with water was performed twice for 10 minutes, ultrasonic washing with acetone for 10 minutes twice, and ultrasonic washing with isopropyl alcohol for 10 minutes twice, followed by hot air drying at 90 ° C.

【0179】つぎにこの基板に例示化合物(p−1);
1,1-ビス(4-ジ-p-トリルアミノフェニル)シクロヘキ
サンをタングステンボート(日本バックスメタル株式会
社製SF208)に入れ、8.0×10-7Torrの真空条件下で0.
2nm/secの成膜速度で真空蒸着し80nmの正孔注入層を形
成した。
Next, on this substrate, the exemplified compound (p-1);
1,1-bis (4-di-p-tolylaminophenyl) cyclohexane was placed in a tungsten boat (SF208 made by Nippon Bucks Metal Co., Ltd.) under a vacuum condition of 8.0 × 10 −7 Torr.
Vacuum deposition was performed at a film formation rate of 2 nm / sec to form a hole injection layer of 80 nm.

【0180】次いで、真空条件を破ることなく下記化合
物(L−1−1)トリス(8-ヒドロキシキノリン)アル
ミニウムをモリブテンボート(日本バックスメタル株式
会社製SS-1-9)に入れ、8.0×10-7Torrの真空条件
下で0.2nm/secの成膜速度で64nmの発光層を積層蒸着し
た。
Next, the following compound (L-1-1) tris (8-hydroxyquinoline) aluminum was placed in a molybden boat (SS-1-9 manufactured by Nippon Bucks Metal Co., Ltd.) without breaking the vacuum conditions, and 8.0 × 10 A 64 nm light emitting layer was laminated and deposited at a deposition rate of 0.2 nm / sec under a vacuum condition of -7 Torr.

【0181】[0181]

【化68】 [Chemical 68]

【0182】さらにこの上に真空条件を破ることなくM
g:Ag(10:1原子比合金)を500nm真空蒸着し、陰
極を形成した。
Furthermore, without breaking the vacuum condition, M
g: Ag (10: 1 atomic ratio alloy) was vacuum-deposited at 500 nm to form a cathode.

【0183】このようにして得られた有機薄膜エレクト
ロルミネッセンス素子に外部電源を接続し24V直流電圧
の印加によって、最大輝度28.3cd/m2の発光が得られ
た。
An external power source was connected to the thus obtained organic thin film electroluminescent element, and by applying a DC voltage of 24 V, light emission with a maximum luminance of 28.3 cd / m 2 was obtained.

【0184】また温度23℃乾燥窒素ガス雰囲気下で24V
直流電圧印加による連続点灯を行ったところ、輝度の半
減する時間は630時間であった。
At a temperature of 23 ° C. in a dry nitrogen gas atmosphere, 24 V
When continuous lighting was performed by applying a DC voltage, the time required for the luminance to decrease by half was 630 hours.

【0185】比較例(2) 陽極としてガラス上にITOを150nm成膜した基板(日
本板硝子株式会社製P110E-H-PS)を所望の形にパ
ターニングを行った後、アルミナ研磨剤にて水とともに
研磨を行った。水洗後、水超音波洗浄10分間2回、アセ
トン超音波洗浄10分間2回、イソプロピルアルコール超
音波洗浄10分間2回行い、さらに90℃にて熱風乾燥を行
った。
Comparative Example (2) After patterning a substrate (P110E-H-PS manufactured by Nippon Sheet Glass Co., Ltd.) in which ITO was deposited to a thickness of 150 nm on a glass as an anode into a desired shape, an alumina abrasive was used together with water. Polished. After washing with water, ultrasonic washing with water was performed twice for 10 minutes, ultrasonic washing with acetone for 10 minutes twice, and ultrasonic washing with isopropyl alcohol for 10 minutes twice, followed by hot air drying at 90 ° C.

【0186】つぎにこの基板に例示化合物(II−72)ス
チリル化合物をタングステンボート(日本バックスメタ
ル株式会社製SF208)に入れ、8.0×10-7Torrの真空条
件下で0.2nm/secの成膜速度で真空蒸着し81nmの正孔注
入層を形成した。
Next, the exemplary compound (II-72) styryl compound was put into this substrate in a tungsten boat (SF208 manufactured by Nippon Bucks Metal Co., Ltd.) to form a film at 0.2 nm / sec under a vacuum condition of 8.0 × 10 −7 Torr. It vacuum-deposited at a rate to form a hole injection layer of 81 nm.

【0187】次いで、真空条件を破ることなく化合物
(L−1−1)トリス(8-ヒドロキシキノリン)アルミ
ニウムをモリブテンボート(日本バックスメタル株式会
社製SS-1-9)に入れ、8.0×10-7Torrの真空条件下
で0.2nm/secの成膜速度で64nmの発光層を積層蒸着し
た。
Then, the compound (L-1-1) tris (8-hydroxyquinoline) aluminum was placed in a molybdenum boat (SS-1-9 manufactured by Nippon Bucks Metal Co., Ltd.) without breaking the vacuum conditions, and 8.0 × 10 − A 64 nm light emitting layer was laminated and deposited at a film forming rate of 0.2 nm / sec under a vacuum condition of 7 Torr.

【0188】さらにこの上に真空条件を破ることなくM
g:Ag(10:1原子比合金)を500nm真空蒸着し、陰
極を形成した。
Furthermore, on top of this, without breaking vacuum conditions, M
g: Ag (10: 1 atomic ratio alloy) was vacuum-deposited at 500 nm to form a cathode.

【0189】このようにして得られた有機薄膜エレクト
ロルミネッセンス素子に外部電源を接続し23V直流電圧
の印加によって、最大輝度43.2cd/m2の発光が得られ
た。
An external power source was connected to the thus obtained organic thin film electroluminescence device, and by applying a DC voltage of 23 V, light emission with a maximum brightness of 43.2 cd / m 2 was obtained.

【0190】また温度23℃乾燥窒素ガス雰囲気下で23V
直流電圧印加による連続点灯を行ったところ、輝度の半
減する時間は932時間であった。
At a temperature of 23 ° C. in a dry nitrogen gas atmosphere, 23 V
When continuous lighting was performed by applying a DC voltage, the time required for the luminance to halve was 932 hours.

【0191】比較例(3) 陽極としてガラス上にITOを150nm成膜した基板(日
本板硝子株式会社製P110E-H-PS)を所望の形にパ
ターニングを行った後、アルミナ研磨剤にて水とともに
研磨を行った。水洗後、水超音波洗浄10分間2回、アセ
トン超音波洗浄10分間2回、イソプロピルアルコール超
音波洗浄10分間2回行い、さらに90℃にて熱風乾燥を行
った。
Comparative Example (3) A substrate (P110E-H-PS manufactured by Nippon Sheet Glass Co., Ltd.) having a 150 nm ITO film formed on glass as an anode was patterned into a desired shape and then treated with an alumina abrasive together with water. Polished. After washing with water, ultrasonic washing with water was performed twice for 10 minutes, ultrasonic washing with acetone for 10 minutes twice, and ultrasonic washing with isopropyl alcohol for 10 minutes twice, followed by hot air drying at 90 ° C.

【0192】つぎにこの基板に例示化合物(p−2)ス
チルベン誘導体をタングステンボート(日本バックスメ
タル株式会社製SF208)に入れ、8.0×10-7Torrの真空
条件下で0.2nm/secの成膜速度で真空蒸着し79nmの正孔
注入層を形成した。
Next, the exemplified compound (p-2) stilbene derivative was placed on this substrate in a tungsten boat (SF208 manufactured by Nippon Bucks Metal Co., Ltd.), and a film was formed at 0.2 nm / sec under a vacuum condition of 8.0 × 10 −7 Torr. It vacuum-deposited at a rate to form a hole injection layer of 79 nm.

【0193】次いで、真空条件を破ることなく化合物
(I−1)をモリブテンボート(日本バックスメタル株
式会社製SS-1-9)に入れ、8.0×10-7Torrの真空条
件下で0.2nm/secの成膜速度で62nmの発光層を積層蒸着
した。
Next, the compound (I-1) was placed in a molybdenum boat (SS-1-9, manufactured by Nippon Bucks Metal Co., Ltd.) without breaking the vacuum condition, and 0.2 nm / 0.2 nm / 8.0 × 10 −7 Torr vacuum condition was applied. A 62 nm light emitting layer was laminated and vapor deposited at a film formation rate of sec.

【0194】さらにこの上に真空条件を破ることなくM
g:Ag(10:1原子比合金)を500nm真空蒸着し、陰
極を形成した。
On top of this, without breaking vacuum conditions, M
g: Ag (10: 1 atomic ratio alloy) was vacuum-deposited at 500 nm to form a cathode.

【0195】このようにして得られた有機薄膜エレクト
ロルミネッセンス素子に外部電源を接続し20V直流電圧
の印加によって、最大輝度44.1cd/m2の発光が得られ
た。
An external power source was connected to the thus obtained organic thin film electroluminescent element, and a 20 V DC voltage was applied, whereby light emission with a maximum brightness of 44.1 cd / m 2 was obtained.

【0196】また温度23℃乾燥窒素ガス雰囲気下で20V
直流電圧印加による連続点灯を行ったところ、輝度の半
減する時間は1240時間であった。
At a temperature of 23 ° C. under a dry nitrogen gas atmosphere, 20 V
When continuous lighting was performed by applying a DC voltage, the time required for the luminance to halve was 1240 hours.

【0197】[0197]

【発明の効果】本発明に係る特定の有機化合物を用いる
ことにより、発光強度、耐久性において充分に実用に耐
える有機薄膜エレクトロルミネッセンス素子が得られ
る。
By using the specific organic compound according to the present invention, it is possible to obtain an organic thin film electroluminescent device which is sufficiently practical for emission intensity and durability.

【図面の簡単な説明】[Brief description of drawings]

【図1】(1)〜(3)は本発明の態様例の有機薄膜エ
レクトロルミネッセンス素子の断面図である。
FIG. 1 (1) to (3) are cross-sectional views of an organic thin film electroluminescent element according to an embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 基板 2 陽極 3 陰極 4 発光層 5 正孔注入層 6 電子注入層 1 substrate 2 anode 3 cathode 4 light emitting layer 5 hole injection layer 6 electron injection layer

─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───

【手続補正書】[Procedure amendment]

【提出日】平成4年2月12日[Submission date] February 12, 1992

【手続補正1】[Procedure Amendment 1]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0012[Correction target item name] 0012

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0012】[0012]

【発明の具体的構成】一般式〔I〕の残基(Z1)〜
Z5)、および一般式〔II〕の表すハロゲン原子とし
ては塩素原子、臭素原子、弗素原子、沃素原子などのハ
ロゲン原子;置換若しくは無置換のアルキル基としては
メチル基,エチル基,プロピル基,ブチル基,シクロヘ
キシル基などのアルキル基;置換若しくは無置換の不飽
和鎖式炭化水素から誘導された1価の基としてはビニル
基,1-プロペニル基,アリル基,イソプロペニル基,1-
ブテニル基,2-ブテニル基,2-ペンテニル基,エチニル
基などの不飽和鎖式炭化水素から誘導された1価の基;
置換若しくは無置換の複素環式基としてはピペリジル
基,ピペリジノ基,ピローリル基,フリル基,チェニル
基,イミダゾリル基,ピラゾリル基,トリアゾリル基,
ピリジル基,チアゾリル基,ピリダジニル基,ピリドン
よりなる1価の基,モルホリニル基,モルホリノ基,オ
キサゾリル基,イソオキサゾリル基,イソチアゾリル
基,ピリミジニル基,ピラジニル基,ピラニル基,ベン
ゾイミダゾリル基,ベンゾチアゾリル基,ベンゾオキサ
ゾリル基,キノリル基などの複素環式基;置換若しくは
無置換のアリール基としてはフェニル基,ナフチル基,
アントニル基,キシリル基,ビフェニル基,フェナント
リル基などのアリール基;置換若しくは無置換の窒素2
原子以上を含む基としてはアゾ基,フェニラゾ基,ナフ
チラゾ基,ヒドラニゾ基,ヒドラゾ基,アゾキシ基,ア
ジド基,ジアゾアミノ基,アミディノ基,ウレイレン
基,グアニディノ基などの窒素2原子以上を含む基;ア
ルコキシル基としてはメトキシル基,エトキシル基,プ
ロポキシル基,ブトキシル基,ペンチルオキシル基,ヘ
キシルオキシル基などのアルコキシル基;アルコキシカ
ルボニル基としてはメトキシカルボニル基,エトキシカ
ルボニル基,ブトキシカルボニル基などのアルコキシカ
ルボニル基;アミノカルボニル基としてはアニリノカル
ボニル基,ジメチルアミノカルボニル基,ラルバモイル
基,アラニル基などのアミノカルボニル基;アリールオ
キシカルボニル基としてはナフチルオキシカルボニル
基,キシリルオキシカルボニル基,フェノキシカルボニ
ル基などのアリールオキシカルボニル基;アシル基とし
てはホルミル基,アセチル基,プロピオニル基,ブチリ
ル基,パレリル基,オアルミトイル基,ステアロイル
基,オレオイル基,ベンゾイル基,トリオイル基,サリ
チロイル基,シンナモイル基,ナフトイル基,フタロイ
ル基,オキサリル基,マロニル基,スクシニル基,フロ
イル基などのアシル基;アリールオキシル基としてはフ
ェノキシ基,トリルオキシ基などのアリールオキシル
基;アラルキル基としてはベンジル基,フェネチル基な
どのアラルキル基;アシルアミノ基としてはアセチルア
ミノ基,プロピオニルアミノ基,ブチリルアミノ基など
のアシルアミノ基;アシルオキシル基としてはアセチル
オキシ基,プロピオニルオキシ基,ブチリルオキシ基な
どのアシルオキシル基である。
DETAILED DESCRIPTION OF THE INVENTION Residue ( Z1 ) of the general formula [I]
( Z5 ) and the halogen atom represented by the general formula [II] include chlorine atom, bromine atom, fluorine atom, iodine atom and the like.
Rogen atom ; Substituted or unsubstituted alkyl group is an alkyl group such as methyl group, ethyl group, propyl group, butyl group, cyclohexyl group; Monovalent group derived from substituted or unsubstituted unsaturated chain hydrocarbon vinyl group as, 1-propenyl, a Lil group, isopropenyl group, 1-
Monovalent groups derived from unsaturated chain hydrocarbons such as butenyl group, 2-butenyl group, 2-pentenyl group, ethynyl group;
Examples of the substituted or unsubstituted heterocyclic group include piperidyl group, piperidino group, pyrrolyl group, furyl group, cenyl group, imidazolyl group, pyrazolyl group, triazolyl group,
Pyridyl group, a thiazolyl group, a pyridazinyl group, a monovalent group formed from pyridone, morpholinyl group, morpholino group, oxazolyl group, isoxazolyl group, isothiazolyl group, pyrimidinyl group, pyrazinyl group, pyranyl group, benzimidazolyl group, benzothiazolyl group, Heterocyclic groups such as oxazolyl group and quinolyl group; substituted or unsubstituted aryl groups include phenyl group, naphthyl group,
Aryl groups such as anthonyl group, xylyl group, biphenyl group, phenanthryl group; substituted or unsubstituted nitrogen 2
As the group containing at least one atom, a group containing at least two nitrogen atoms such as azo group, phenylazo group, naphthyrazo group, hydranizo group, hydrazo group, azoxy group, azido group, diazoamino group, amidino group, ureylene group, guanidino group; alkoxyl Alkoxyl groups such as methoxyl group, ethoxyl group, propoxyl group, butoxyl group, pentyloxyl group, hexyloxyl group; alkoxycarbonyl groups such as methoxycarbonyl group, ethoxycarbonyl group, butoxycarbonyl group, etc. as alkoxycarbonyl group; Aminocarbonyl groups such as anilinocarbonyl group, dimethylaminocarbonyl group, larvamoyl group, and alanyl group; aryloxycarbonyl groups such as naphthyloxycarbonyl group and xylyloxycarbonyl group. Aryloxycarbonyl groups such as bonyl group and phenoxycarbonyl group; acyl groups as formyl group, acetyl group, propionyl group, butyryl group, pareryl group, oialuminoyl group, stearoyl group, oleoyl group, benzoyl group, trioyl group, salicyloyl group Acyl groups such as cinnamoyl group, naphthoyl group, phthaloyl group, oxalyl group, malonyl group, succinyl group and furoyl group; aryloxyl groups such as phenoxy group and tolyloxy group; aryloxyl groups such as aralkyl group, benzyl group and phenethyl group Groups such as aralkyl groups; acylamino groups such as acetylamino groups, propionylamino groups, butyrylamino groups such as acylamino groups; acyloxyl groups such as acetyloxy groups, propionyloxy groups, butyryl An acyloxyl group such as alkoxy group.

【手続補正2】[Procedure Amendment 2]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0013[Correction target item name] 0013

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0013】前記の置換基とは、水素原子、ハロゲン原
子、メチル基,エチル基,プロピル基,ブチル基,シク
ロヘキシル基などのアルキル基、ビニル基,1-プロペニ
ル基,アリル基,イソプロペニル基,1-ブテニル基,2-
ブテニル基,2-ペンテニル基,エチニル基などの不飽和
鎖式炭化水素から誘導された1価の基、ピペリジル基,
ピペリジノ基,ピローリル基,フリル基,チェニル基,
イミダゾリル基,ピラゾリル基,トリアゾリル基,ピリ
ジル基,チアゾリル基,ピリダジニル基,ピリドンより
なる1価の基,モルホリニル基,モルホリノ基,オキサ
ゾリル基,イソオキサゾリル基,イソチアゾリル基,ピ
リミジニル基,ピラジニル基,ピラニル基,ベンゾイミ
ダゾリル基,ベンゾチアゾリル基,ベンゾオキサゾリル
基,キノリル基などの複素環式基、フェニル基,ナフチ
ル基,アントニル基,キシリル基,ビフェニル基,フェ
ナントリル基などのアリール基、アゾ基、フェニラゾ
基,ナフチラゾ基,ヒドラニゾ基,ヒドラゾ基,アゾキ
シ基,アジド基,ジアゾアミノ基,アミディノ基,ウレ
イレン基,グアニディノ基などの窒素2原子以上を含む
基、スチリル基、アニシル基、アミノ基、アルキルアミ
ノ基、ジアルキルアミノ基、メトキシル基,エトキシル
基,プロポキシル基,ブトキシル基,ペンチルオキシル
基,ヘキシルオキシル基などのアルコキシ基、メトキシ
カルボニル基,エトキシカルボニル基,ブトキシカルボ
ニル基などのアルコキシカルボニル基、アニリノカルボ
ニル基,ジメチルアミノカルボニル基,ラルバモイル
基,アラニル基などのアミノカルボニル基、ナフチルオ
キシカルボニル基,キシリルオキシカルボニル基,フェ
ノキシカルボニル基などのアリールオキシカルボニル
基、カルボキシル基、ホルミル基,アセチル基,プロピ
オニル基,ブチリル基,パレリル基,オアルミトイル
基,ステアロイル基,オレオイル基,ベンゾイル基,ト
リオイル基,サリチロイル基,シンナモイル基,ナフト
イル基,フタロイル基,オキサリル基,マロニル基,ス
クシニル基,フロイル基などのアシル基、フェノキシ
基,トリルオキシ基などのアリールオキシ基、ベンジル
基,フェネチル基などのアラルキル基、アセチルアミノ
基,プロピオニルアミノ基,ブチリルアミノ基などのア
シルアミノ基、アセチルオキシ基,プロピオニルオキシ
基,ブチリルオキシ基などのアシルオキシル基、水酸
基、シアノ基、ニトロ基、スルホ基またはスルホニウム
基を表す。
The above-mentioned substituents include hydrogen atom, halogen atom, alkyl group such as methyl group, ethyl group, propyl group, butyl group and cyclohexyl group, vinyl group, 1-propenyl group, allyl group, isopropenyl group, 1-butenyl group, 2-
Monovalent groups derived from unsaturated chain hydrocarbons such as butenyl group, 2-pentenyl group, ethynyl group, piperidyl group,
Piperidino group, pyrrolyl group, furyl group, cenyl group,
Imidazolyl group, a pyrazolyl group, a triazolyl group, a pyridyl group, a thiazolyl group, a pyridazinyl group, a monovalent group formed from pyridone, morpholinyl group, Moruho Reno group, oxazolyl group, isoxazolyl group, isothiazolyl group, pyrimidinyl group, pyrazinyl group, pyranyl group , Heterocyclic groups such as benzimidazolyl group, benzothiazolyl group, benzoxazolyl group, quinolyl group, phenyl group, naphthyl group, anthonyl group, aryl groups such as xylyl group, biphenyl group, phenanthryl group, azo group, phenylazo group, Groups containing 2 or more nitrogen atoms such as naphthyrazo group, hydranizo group, hydrazo group, azoxy group, azido group, diazoamino group, amidino group, ureylene group, guanidino group, styryl group, anisyl group, amino group, alkylamino group, dialkyl group. Group, methoxyl group, ethoxyl group, propoxyl group, butoxyl group, pentyloxyl group, hexyloxyl group and other alkoxy groups, methoxycarbonyl group, ethoxycarbonyl group, butoxycarbonyl group and other alkoxycarbonyl groups, anilinocarbonyl group, Aminocarbonyl groups such as dimethylaminocarbonyl group, larvamoyl group, alanyl group, naphthyloxycarbonyl group, xylyloxycarbonyl group, aryloxycarbonyl group such as phenoxycarbonyl group, carboxyl group, formyl group, acetyl group, propionyl group, butyryl Group, pareryl group, oaluminoyl group, stearoyl group, oleoyl group, benzoyl group, trioyl group, salicyloyl group, cinnamoyl group, naphthoyl group, phthaloyl group, oxalyl group, malo Group such as acyl group, succinyl group and furoyl group, aryloxy group such as phenoxy group and tolyloxy group, aralkyl group such as benzyl group and phenethyl group, acylamino group such as acetylamino group, propionylamino group and butyrylamino group, acetyl It represents an acyloxyl group such as an oxy group, a propionyloxy group and a butyryloxy group, a hydroxyl group, a cyano group, a nitro group, a sulfo group or a sulfonium group.

【手続補正3】[Procedure 3]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0038[Correction target item name] 0038

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0038】[0038]

【化26】 [Chemical formula 26]

【手続補正4】[Procedure amendment 4]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0039[Correction target item name] 0039

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0039】[0039]

【化27】 [Chemical 27]

【手続補正5】[Procedure Amendment 5]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0040[Item name to be corrected] 0040

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0040】[0040]

【化28】 [Chemical 28]

【手続補正6】[Procedure correction 6]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0049[Correction target item name] 0049

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0049】[0049]

【化37】 [Chemical 37]

【手続補正7】[Procedure Amendment 7]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0051[Correction target item name] 0051

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0051】[0051]

【化39】 [Chemical Formula 39]

【手続補正8】[Procedure Amendment 8]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0054[Correction target item name] 0054

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0054】合成例1 掻混ぜ器と還流冷却器および滴下漏斗を取り付けた三つ
口フラスコに、クロラニル(21g;mp287℃),無水マレ
イン酸(150g;mp55.5℃)およびペリレン(10g;mp280
℃)十分粉砕混合した物を入れ、加熱しながら弗点で
10分間掻混ぜた。その後、滴下漏斗から温めたキシレン
(200ml)を加え掻混ぜ1時間沸騰し、熱濾過した。熱
濾過で分離した赤茶色針状結晶をキシレンで洗い、さら
にエーテルで十分に洗浄することにより赤茶色針状結晶
を得た。得られた赤茶色針状結晶を減圧昇華装置を使っ
て300℃,10-4mmHgで4時間半昇華し、昇華残留物をさ
らに減圧昇華装置を使って400℃,10-4mmHgで6時間処
理することにより、光沢のある赤茶色針状結晶(I−2
8)が得られた。
Synthesis Example 1 Chloranil (21 g; mp287 ° C.), maleic anhydride (150 g; mp55.5 ° C.) and perylene (10 g; mp280) were placed in a three-necked flask equipped with a stirrer, a reflux condenser and a dropping funnel.
(° C) is thoroughly crushed and mixed, and while heating,
Stir for 10 minutes. Then, warmed xylene (200 ml) was added from the dropping funnel, stirred and boiled for 1 hour, and hot filtered. The reddish brown needle-like crystals separated by hot filtration were washed with xylene and further thoroughly washed with ether to obtain reddish-brown needle-like crystals. The obtained reddish brown needle crystals were sublimated for 4 hours and a half at 300 ° C and 10 -4 mmHg using a vacuum sublimation device, and the sublimation residue was further used at 400 ° C and 10 -4 mmHg for 6 hours using a vacuum sublimation device. By processing, glossy reddish brown needle crystals (I-2
8) was obtained.

【手続補正9】[Procedure Amendment 9]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0064[Correction target item name] 0064

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0064】一般式〔III〕で表される燐化合物は対応
するハロメチル化合物とトリアリールホスフィンあるい
トリアルキルホスフィン、または亜燐酸トリアルキル
とを直接あるいはトルエン、キシレン等の溶媒中で加熱
することにより容易に製造することができる。
The phosphorus compound represented by the general formula [III] can be easily prepared by heating the corresponding halomethyl compound and triarylphosphine or trialkylphosphine or trialkylphosphite directly or in a solvent such as toluene or xylene. Can be manufactured.

【手続補正10】[Procedure Amendment 10]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0085[Correction target item name] 0085

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0085】[0085]

【化49】 [Chemical 49]

【手続補正11】[Procedure Amendment 11]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0086[Correction target item name] 0086

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0086】[0086]

【化50】 [Chemical 50]

【手続補正12】[Procedure Amendment 12]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0106[Correction target item name] 0106

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0106】[0106]

【化64】 [Chemical 64]

【手続補正13】[Procedure Amendment 13]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0117[Name of item to be corrected] 0117

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0117】このようにして得られた有機薄膜エレクト
ロルミネッセンス素子に外部電源を接続し17V直流電圧
の印加によって、最大輝度63.9cd/m2発光が得られ
た。また温度23℃乾燥窒素ガス雰囲気下で17V直流電圧
印加による連続点灯を行ったところ、輝度の半減する時
間は1589時間であった。
An external power source was connected to the thus obtained organic thin film electroluminescent element, and a 17 V DC voltage was applied, whereby light emission with a maximum luminance of 63.9 cd / m 2 was obtained. Further, when continuous lighting was performed by applying a DC voltage of 17 V in a dry nitrogen gas atmosphere at a temperature of 23 ° C., the time required to reduce the luminance by half was 1589 hours.

【手続補正14】[Procedure Amendment 14]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0146[Name of item to be corrected] 0146

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0146】このようにして得られた有機薄膜エレクト
ロルミネッセンス素子に外部電源を接続し17V直流電圧
の印加によって、最大輝度60.7cd/m2の発光が得られ
た。
An external power source was connected to the thus obtained organic thin film electroluminescent element, and a 17 V DC voltage was applied, whereby light emission with a maximum luminance of 60.7 cd / m 2 was obtained.

【手続補正15】[Procedure Amendment 15]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0150[Correction target item name] 0150

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0150】次いで、真空条件を破ることなく化合物
(I−)をモリブテンボート(日本バックスメタル株
式会社製SS-1-9)に入れ、8.0×10-7Torrの真空条
件下で0.2nm/secの成膜速度で62nmの発光層を積層蒸着
した。
Then, the compound (I- 2 ) was placed in a molybdenum boat (SS-1-9 manufactured by Nippon Bucks Metal Co., Ltd.) without breaking the vacuum condition, and 0.2 nm / 0.2 nm / vacuum condition was obtained under a vacuum condition of 8.0 × 10 -7 Torr. A 62 nm light emitting layer was laminated and vapor deposited at a film formation rate of sec.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 一対の対向電極とこれらによって挟持さ
れた複数の有機化合物層から構成されているエレクトロ
ルミネッセンス素子において、下記一般式〔I〕で表わ
される有機化合物を含有する層と、下記一般式〔II〕で
表されるスチリル化合物を含有する層を、それぞれ少な
くとも一層以上ずつ設けたことを特徴とする有機薄膜エ
レクトロルミネッセンス素子。 【化1】 〔一般式〔I〕の残基Zの(Z1)〜(Z4)中、R1
11はそれぞれ独立に、水素原子、ハロゲン原子、置換
若しくは無置換の続記5つの基;アルキル基、不飽和鎖
式炭化水素から誘導された1価の基、複素環式基、アリ
ール基、窒素2原子以上を含む基、又はスチリル基、ア
ニシル基、アミノ基、アルキルアミノ基、ジアルキルア
ミノ基、アルコキシ基、アルコキシカルボニル基、アミ
ノカルボニル基、アリールオキシカルボニル基、カルボ
キシル基、アシル基、アリールオキシル基、アラルキル
基、アシルアミノ基、アシルオキシル基、水酸基、シア
ノ基、ニトロ基、スルホ基、スルホニウム基を表し、R
1とR2、R2とR3、R3とR4、R6とR7、R7とR8、R
8とR9、R9とR10、R10とR11は互いに結合して置換
若しくは無置換の飽和または不飽和の環構造を形成して
いてもよい。また上記式(Z5)中Xは、置換若しくは
無置換の複素環を表す。〕 【化2】 〔上記一般式〔II〕中、R12及びR13は、それぞれ独立
に、水素原子、置換若しくは無置換の続記4つの基;ア
ルキル基、複素環基、アリール基、不飽和鎖式炭化水素
から誘導された1価の基を表し、R12とR13は互いに結
合して置換若しくは無置換の飽和または不飽和の環構造
を形成していてもよい。R14は、置換若しくは無置換の
続記3つの基;アルキル基、アリール基、アルコキシ基
又は−{p(C6H4)}−CH=C{(−R12)(−R13)}を表し、
12及びR13は前記と同義である。R15は、水素原子、
置換若しくは無置換の続記3つの基;アルキル基、アリ
ール基、アルコキシ基を表す。〕
1. An electroluminescent device comprising a pair of counter electrodes and a plurality of organic compound layers sandwiched therebetween, a layer containing an organic compound represented by the following general formula [I], and a general formula: An organic thin film electroluminescent device, comprising at least one layer containing a styryl compound represented by [II]. [Chemical 1] [In residue (Z1) to (Z4) of residue Z of general formula [I], R 1 to
R 11 s are each independently a hydrogen atom, a halogen atom, a substituted or unsubstituted five groups described below; an alkyl group, a monovalent group derived from an unsaturated chain hydrocarbon, a heterocyclic group, an aryl group, Group containing two or more nitrogen atoms, or styryl group, anisyl group, amino group, alkylamino group, dialkylamino group, alkoxy group, alkoxycarbonyl group, aminocarbonyl group, aryloxycarbonyl group, carboxyl group, acyl group, aryloxyl Group, aralkyl group, acylamino group, acyloxyl group, hydroxyl group, cyano group, nitro group, sulfo group, sulfonium group, R
1 and R 2 , R 2 and R 3 , R 3 and R 4 , R 6 and R 7 , R 7 and R 8 , R
8 and R 9 , R 9 and R 10 , R 10 and R 11 may be bonded to each other to form a substituted or unsubstituted saturated or unsaturated ring structure. Further, X in the above formula (Z5) represents a substituted or unsubstituted heterocycle. ] [Chemical 2] [In the above general formula [II], R 12 and R 13 are each independently a hydrogen atom, a substituted or unsubstituted four groups described below; an alkyl group, a heterocyclic group, an aryl group, an unsaturated chain hydrocarbon. R 12 and R 13 may be bonded to each other to form a substituted or unsubstituted saturated or unsaturated ring structure. R 14 is a substituted or unsubstituted three groups described below; an alkyl group, an aryl group, an alkoxy group or-{p (C 6 H 4 )}-CH = C {(-R 12 ) (-R 13 )} Represents
R 12 and R 13 are as defined above. R 15 is a hydrogen atom,
Substituting or non-substituted, the following three groups; an alkyl group, an aryl group, and an alkoxy group. ]
【請求項2】 前記一般式〔I〕で表される有機化合物
を発光物質とし、前記一般式〔II〕で表されるスチリル
化合物を正孔輸送物質としたことを特徴とする請求項1
に記載の有機薄膜エレクトロルミネッセンス素子。
2. The organic compound represented by the general formula [I] is used as a light emitting substance, and the styryl compound represented by the general formula [II] is used as a hole transporting substance.
2. The organic thin film electroluminescent element according to.
JP3333517A 1991-11-07 1991-12-17 Electroluminescent element of organic thin film Pending JPH05163488A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP3333517A JPH05163488A (en) 1991-12-17 1991-12-17 Electroluminescent element of organic thin film
US07/967,997 US5443922A (en) 1991-11-07 1992-10-28 Organic thin film electroluminescence element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3333517A JPH05163488A (en) 1991-12-17 1991-12-17 Electroluminescent element of organic thin film

Publications (1)

Publication Number Publication Date
JPH05163488A true JPH05163488A (en) 1993-06-29

Family

ID=18266931

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3333517A Pending JPH05163488A (en) 1991-11-07 1991-12-17 Electroluminescent element of organic thin film

Country Status (1)

Country Link
JP (1) JPH05163488A (en)

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