JPH0453195B2 - - Google Patents
Info
- Publication number
- JPH0453195B2 JPH0453195B2 JP61002459A JP245986A JPH0453195B2 JP H0453195 B2 JPH0453195 B2 JP H0453195B2 JP 61002459 A JP61002459 A JP 61002459A JP 245986 A JP245986 A JP 245986A JP H0453195 B2 JPH0453195 B2 JP H0453195B2
- Authority
- JP
- Japan
- Prior art keywords
- optical recording
- liquid crystal
- light
- polymer liquid
- information
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 26
- 239000005264 High molar mass liquid crystal Substances 0.000 claims description 25
- 230000003098 cholesteric effect Effects 0.000 claims description 14
- 238000002834 transmittance Methods 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 2
- 239000010409 thin film Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 239000010410 layer Substances 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004986 Cholesteric liquid crystals (ChLC) Substances 0.000 description 2
- 230000005374 Kerr effect Effects 0.000 description 2
- -1 chalcogenide compound Chemical class 0.000 description 2
- 150000001841 cholesterols Chemical class 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- YRZZLAGRKZIJJI-UHFFFAOYSA-N oxyvanadium phthalocyanine Chemical compound [V+2]=O.C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 YRZZLAGRKZIJJI-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 230000003381 solubilizing effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Optical Recording Or Reproduction (AREA)
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は光記録読出方法、特に消去可能な光記
録媒体の読出方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an optical recording and reading method, and particularly to a reading method for erasable optical recording media.
(従来の技術)
レーザビームを集光レンズにより微小スポツト
に集光し、光記録媒体面に照射し前記媒体上に光
学的変化を生じせしめて情報を記録する光記録方
式は高密度の情報記録が可能な方式として注目さ
れている。前記光記録に用いる媒体としては極め
て多岐に渡るものが提案検討されている。本発明
に係わる特に消去可能な光記録方式としてはフア
ラデー効果、カー効果等の磁気光学効果を示す磁
気光学材料を媒体とした所謂光磁気記録方式とカ
ルコゲナイド化合物の如き材料の相変化により光
学特性の差異を生ずる所謂相変化媒体を用いた記
録方式が代表的方式としてしられている。この他
にも、種々の媒体方式が提案されており、本発明
と同様高分子液晶を用いた情報方式も提案されて
いる(特開昭59−10930、特開昭59−35989)。(Prior Art) The optical recording method, in which a laser beam is focused on a minute spot by a condensing lens and irradiated onto the surface of an optical recording medium to cause an optical change on the medium and record information, is a high-density information recording method. This method is attracting attention as a possible method. A wide variety of media have been proposed and considered for use in the optical recording. Particularly erasable optical recording methods according to the present invention include a so-called magneto-optical recording method using a magneto-optical material exhibiting magneto-optical effects such as Faraday effect and Kerr effect, and a method in which optical properties are changed by phase change of a material such as a chalcogenide compound. A recording method using a so-called phase change medium that produces a difference is known as a typical method. In addition, various media systems have been proposed, and information systems using polymeric liquid crystals, similar to the present invention, have also been proposed (Japanese Patent Laid-Open No. 59-10930, Japanese Patent Laid-open No. 59-35989).
(発明が解決しようとする問題点)
光磁気記録方式は現在最も有力な方式であり、
実用化に近いものであるが一般的にS/Nが〜
40dBと低いこと、媒体に印加する外部磁場の応
答速度が遅いため、情報の記録単位であるビツト
毎の部分消去ができなため一トラツク一括消去の
ため、情報の書き換えが複雑になる欠点を有す
る。又、相変化媒体として現在検討されている媒
体はTe系酸化物もしくはTe系合金であるが、こ
れらは材料の毒性の問題があり人体への悪影響が
危惧される。又、これらの記録媒体は蒸着、スパ
ツタ等の技術により薄膜化されるが、材料、製造
的にコストが高い欠点を有する。簡便な製法でか
つコスト的にも安い光記録媒体あるいは光記録方
式が強く望まれる。以上のような欠点を解決する
一方法として高分子液晶を用いた記録方式が前述
の如く提案されているが、かかる方式においては
特にネマチツク性高分子液晶のランダム配向状態
を書き込みあるいは消去のいずれかの状態として
用いるため、入射光が散乱され検出機構が制限さ
れるためS/N比がかならずしも充分でない欠点
を有する。(Problems to be solved by the invention) Magneto-optical recording is currently the most popular method.
Although it is close to practical use, the S/N is generally ~
Due to the low response speed of 40 dB and the slow response speed of the external magnetic field applied to the medium, it is not possible to partially erase each bit, which is the recording unit of information, and one track is erased all at once, making rewriting information complicated. . Furthermore, the media currently being considered as phase change media are Te-based oxides or Te-based alloys, but these have the problem of material toxicity and are feared to have an adverse effect on the human body. Furthermore, although these recording media can be made into thin films by techniques such as vapor deposition and sputtering, they have the disadvantage of high costs in terms of materials and manufacturing. There is a strong desire for an optical recording medium or optical recording system that is simple to manufacture and inexpensive. As mentioned above, a recording method using a polymer liquid crystal has been proposed as a way to solve the above-mentioned drawbacks. Since the sensor is used in the state of
一方、情報の読出方法は用いる媒体の光学特性
と光学系により決められるものである。光磁気記
録方式のようにフアラデー効果、又はカー効果を
用いるものは情報を読出すために媒体に入射する
光ビームは直線偏光を用いた場合、最も高S/N
が期待される。一方、従来のカルコゲナイト化合
物の如き材料を用いた相変化型記録方式では媒体
に入射する光ビームの特性は媒体そのものの性質
とは無関係で、主に光ヘツド光学系の制約で決め
られる。即ち、媒体自身の光学特性は光ビームの
偏光状態にほとんど依存しない。読み出し光ビー
ムは光ヘツド光学系に最も適したものが形成され
るが、これは何ら媒体の特性から制約をうけたも
のではない。 On the other hand, the method of reading information is determined by the optical characteristics of the medium used and the optical system. In magneto-optical recording systems that use the Faraday effect or the Kerr effect, the highest S/N is achieved when the light beam incident on the medium to read information is linearly polarized.
There is expected. On the other hand, in the conventional phase change recording system using materials such as chalcogenite compounds, the characteristics of the light beam incident on the medium are independent of the properties of the medium itself, and are determined mainly by the constraints of the optical head optical system. That is, the optical properties of the medium itself are almost independent of the polarization state of the light beam. The readout light beam is formed to be the most suitable for the optical head optical system, but this is not restricted in any way by the characteristics of the medium.
前述の高分子液晶を用いた光記録媒体の従来の
情報読出方法は、光ビームの散乱を検出する方法
であり、その散乱特性のためS/Nが高くならな
い問題がある。 The conventional method for reading information from an optical recording medium using the above-mentioned polymeric liquid crystal is a method of detecting scattering of a light beam, and there is a problem in that the S/N ratio is not high due to its scattering characteristics.
(問題点を解決するための手段)
本発明の目的は上記した欠点を改善する。即ち
製造的にも簡便で低コストであり、かつ高いS/
N比を実現できる消去可能な高分子液晶を光記録
媒体として用い、高S/Nを実現できる光記録の
読出方法を提供するものである。(Means for solving the problems) The object of the present invention is to improve the above-mentioned drawbacks. In other words, it is easy to manufacture, low cost, and has a high S/
The present invention uses an erasable polymer liquid crystal that can achieve a high S/N ratio as an optical recording medium, and provides a reading method for optical recording that can achieve a high S/N ratio.
本発明になる光記録読出方法は、光記録媒体の
記録層としてコレステリツク性高分子液晶を用
い、かつ前記コレステリツク性高分子液晶のラセ
ンピツチが可視光から近赤外波長域に選択反射さ
れるように調整されており、読み出し用光ビーム
の円偏光の回転方向が前記コレステリツク高分子
液晶のラセン回転方向と同一になつている。 The optical recording/reading method of the present invention uses a cholesteric polymer liquid crystal as the recording layer of an optical recording medium, and the helical pitch of the cholesteric polymer liquid crystal is such that light is selectively reflected from visible light to near-infrared wavelength range. The rotation direction of the circularly polarized light of the readout light beam is the same as the helical rotation direction of the cholesteric polymer liquid crystal.
(作用)
本発明の基本的動作原理を説明する。記録層に
はコレステリツク性高分子液晶を用いる。コレス
テリツク性高分子液晶は液晶基がラセン配列して
いる事が知られており、前記ラセン配列をなすた
めコレステリツク特有の光学特性を示す。代表的
光学特性として前記ラセン構造の周期ピツチに対
応した光の波長選択反射現象がある。これはコレ
ステリツク高分子液晶のピツチをp、屈折率nと
すると、波長λ=npでかつラセンの回転方向と
同方向に回転する円偏光のみ選択的に反射される
現象である。本発明はこの選択反射現象に基づく
ものである。光選択反射波長は、前記高分子液晶
の屈折率、ピツチを変える事により変化させる事
が可能である。従来、低分子系コレステリツク液
晶ではピツチは温度等により変化する事が知られ
ている。(Operation) The basic operating principle of the present invention will be explained. A cholesteric polymer liquid crystal is used for the recording layer. It is known that the liquid crystal groups of cholesteric polymer liquid crystals have a helical arrangement, and because of the helical arrangement, they exhibit optical properties unique to cholesteric. A typical optical property is a wavelength-selective reflection phenomenon of light corresponding to the periodic pitch of the helical structure. This is a phenomenon in which, assuming that the pitch of the cholesteric polymer liquid crystal is p and the refractive index is n, only circularly polarized light having a wavelength λ=np and rotating in the same direction as the helical rotation direction is selectively reflected. The present invention is based on this selective reflection phenomenon. The light selective reflection wavelength can be changed by changing the refractive index and pitch of the polymer liquid crystal. It has been known that the pitch of low-molecular-weight cholesteric liquid crystals changes depending on temperature and other factors.
本発明者が鋭意検討した結果、コレステリツク
相にあるコレステリツク高分子液晶にレーザビー
ム照射により急激に加熱すると、ラセンピツチ長
変化もしくはラセン軸の回転等の変化に対応する
と思われる光選択波長変化による色変化(透過率
変化)が生じ、かつレーザビーム照射の除去によ
り急激に冷却すると前記色変化状態が保存される
事が判明した。これは変化したピツチ状態が急冷
効果のためそのまま保存されたものと考えられ
る。一方、徐冷した場合は前記色変化状態が消失
し、元の状態に戻ることが判明した。レーザビー
ムの照射エネルギーを更に大きくした場合は前記
ピツチ長変化に対応する色変化とは異なりピツト
形成が生じ急冷により保存され、更に前記形成さ
れたピツトは再加熱徐冷により消失し元の状態に
戻ることが確認された。 As a result of intensive studies by the present inventors, it has been found that when a cholesteric polymer liquid crystal in a cholesteric phase is rapidly heated by laser beam irradiation, a color change occurs due to a change in the light selection wavelength, which seems to correspond to a change in the helical pitch length or rotation of the helical axis. (Transmittance change) occurs, and it has been found that the color change state is preserved when rapidly cooled by removal of laser beam irradiation. This is thought to be because the changed pitch state was preserved as it was due to the rapid cooling effect. On the other hand, it was found that when the material was slowly cooled, the color change state disappeared and the product returned to its original state. When the irradiation energy of the laser beam is further increased, unlike the color change corresponding to the pitch length change, pits are formed and are preserved by rapid cooling, and the formed pits disappear by reheating and slow cooling, returning to the original state. It was confirmed that he would return.
本発明を図を用いて更に詳細に説明する。 The present invention will be explained in more detail using figures.
第1図は本発明の光記録媒体及び読み出し方法
の一実施例の模式的断面図である。第1図におい
て、プラスチツク又はガラス基板1上に書き込み
光ビームを効率的に熱に変換する光吸収層が形成
されている。光吸収機としては光ビームの波長域
に大きな吸収を有し、融点が比較的高く薄膜化で
きるものが望ましい。光ビーム5として半導体レ
ーザ(λ=0.78〜0.83μm)を用いる時はバナジル
フタロシアニン等フタロシアニン化合物等を真空
蒸着で形成したものが利用できる。更に可溶性フ
タロシアニンの如きものを適当な溶媒で塗布、乾
燥させたものの如きものも使用できる。更にその
上にはコレステリツク性高分子液晶薄膜3が形成
されている。コレステリツク性高分子液晶3とし
ては種々の物が利用できる。一例を上げれば、下
記構造式〔I〕で示されるようなコレステロール
誘導体とネマチツク性液晶分子を付加したシロキ
サン系高分子液晶がある。 FIG. 1 is a schematic cross-sectional view of an embodiment of the optical recording medium and reading method of the present invention. In FIG. 1, a light absorbing layer is formed on a plastic or glass substrate 1 to efficiently convert the writing light beam into heat. The light absorber is preferably one that has large absorption in the wavelength range of the light beam, has a relatively high melting point, and can be made into a thin film. When a semiconductor laser (λ=0.78 to 0.83 μm) is used as the light beam 5, a phthalocyanine compound such as vanadyl phthalocyanine formed by vacuum evaporation can be used. Furthermore, soluble phthalocyanine coated with a suitable solvent and dried may also be used. Furthermore, a cholesteric polymer liquid crystal thin film 3 is formed thereon. Various materials can be used as the cholesteric polymer liquid crystal 3. One example is a siloxane polymer liquid crystal having a cholesterol derivative and nematic liquid crystal molecules added thereto, as shown by the following structural formula [I].
前記コレステリツク液晶中には成膜性を向上さ
せるため微量の可塑剤等添加物が含まれていても
よい。前記高分子液晶薄膜化は種々の方法により
可能である。前記高分子液晶を適当な溶媒に可溶
化し、スピンコート等により塗布する方法、グラ
ビア印刷で転写する方法、ドクタ−グレ−ドで塗
布する方法等が採用でき、前記塗布膜を加熱乾燥
することで薄膜化できる。あるいは基板上で加熱
加圧下で成形することにより薄膜化することも可
能である。 The cholesteric liquid crystal may contain a trace amount of additives such as a plasticizer in order to improve film forming properties. The polymer liquid crystal film can be made into a thin film by various methods. A method of solubilizing the polymer liquid crystal in a suitable solvent and applying it by spin coating, etc., a method of transferring it by gravure printing, a method of applying it with a doctor grade, etc. can be adopted, and the coating film is dried by heating. can be made into a thin film. Alternatively, it is also possible to form a thin film by molding on a substrate under heat and pressure.
前記高分子液晶薄膜の膜厚は0.1μm〜数十μm
に調整される。前記高分子液晶薄膜上には一般に
保護膜4もしくは保護層4が形成される。しか
し、前記保護膜4は本発明の必須要件ではなく、
これがなくても良い。前記高分子液晶のラセン回
転方向は用いる光学活性物質により決まる。前記
構造式〔I〕で示されるようなコレステロール誘
導体を含む高分子液晶は左回り円偏光のλ=np
で示される波長を中心に選択反射される。 The film thickness of the polymer liquid crystal thin film is 0.1 μm to several tens of μm.
is adjusted to A protective film 4 or protective layer 4 is generally formed on the polymer liquid crystal thin film. However, the protective film 4 is not an essential requirement of the present invention;
You don't need this. The helical rotation direction of the polymer liquid crystal is determined by the optically active material used. A polymer liquid crystal containing a cholesterol derivative as shown in the above structural formula [I] has a left-handed circularly polarized light λ=np.
It is selectively reflected around the wavelength indicated by .
従つて、前記ピツチを選択反射波長を可視域か
ら近赤外波長域に調整し、かつ前記コレステリツ
クと同方向に回転した円偏光を読み出し光に用い
た場合(第1図においては、読み出し光ビーム5
の偏光方向6は左回りを示してある。当然媒体が
右回りラセン構造をなす場合は、前記読み出し光
ビームの偏光方向は右回りを用いればよい。)、極
めて大きな光学変化を示し、高いS/Nを実現で
きる。即ち、あらかじめピツチpを読み出し光源
波長λに対してλがほぼnpに等しくなるように
調整しておけば、情報が書き込まれない領域では
極めて高い反射率を示し、一方ピツトを形成する
ようなモードで情報を書き込んだ領域では急激な
反射率低下が生じ、結果的に高S/Nが実現でき
る。一方、前記ピツチpをあらかじめ前記読み出
し光源の波長λに対してλ≫npに調整し、かつ
ピツチ長が長くなるような光量領域で情報を書き
込めば、情報の非書込部は極めて低い反射率、書
込部は高反射率になり高S/Nが同様に実現でき
る。 Therefore, when the selective reflection wavelength of the pitch is adjusted from the visible range to the near-infrared wavelength range, and circularly polarized light rotated in the same direction as the cholesteric light is used as the readout light (in Fig. 1, the readout light beam 5
The polarization direction 6 is shown counterclockwise. Of course, if the medium has a clockwise helical structure, the polarization direction of the readout light beam may be clockwise. ), it shows an extremely large optical change and can achieve a high S/N. In other words, if the pitch p is adjusted in advance so that λ is approximately equal to np with respect to the reading light source wavelength λ, the area where no information is written will have an extremely high reflectance, while the mode that forms a pit will In the area where information is written, a sharp drop in reflectance occurs, resulting in a high S/N ratio. On the other hand, if the pitch p is adjusted in advance so that λ≫np with respect to the wavelength λ of the reading light source, and information is written in a light amount region where the pitch length becomes long, the non-information writing area has an extremely low reflectance. , the writing section has a high reflectance, and a high S/N can be achieved as well.
実施例 1
ガラス基板上にバナジルフタロシアニンを真空
蒸着で形成し、その上に前記構造式〔I〕で示さ
れる高分子液晶の薄膜をスピンコート等で形成し
た。前記高分子液晶の選択反射中心波長はほぼ
830nmに調整した。光ビームは波長830nmのレー
ザダイオードを用いた。8mW 80μsのパルス光で
書込みを行ないピツトの形成を確認した。前記媒
体を1mWの左回り円偏光で再生したところS/
N=60dBの高S/Nで再生できた。一方右回り
りの円偏光もしくは無偏光で再生したところほと
んどS/Nが得られなかつた。前記情報を書込ん
だ媒体を70℃以上に加熱することで前記情報は完
全に消去できた。なお、媒体の劣化はみとめられ
なかつた。Example 1 Vanadyl phthalocyanine was formed on a glass substrate by vacuum evaporation, and a thin film of polymeric liquid crystal represented by the structural formula [I] was formed thereon by spin coating or the like. The selective reflection center wavelength of the polymer liquid crystal is approximately
Adjusted to 830nm. A laser diode with a wavelength of 830 nm was used as the light beam. Writing was performed using pulsed light of 8 mW for 80 μs, and the formation of pits was confirmed. When the above medium was reproduced with 1 mW of left-handed circularly polarized light, S/
It was possible to reproduce with a high S/N of N=60dB. On the other hand, when reproduction was performed using clockwise circularly polarized light or non-polarized light, almost no S/N ratio was obtained. By heating the medium on which the information was written to 70°C or higher, the information could be completely erased. Note that no deterioration of the medium was observed.
実施例 2
高分子液晶の選択反射波長を550nmに調整した
以外は実施例1と同じ構成の媒体に5mW 80μsの
パルス光で書き込みを行ないピツチ長変化に基づ
く色変化を確認した。1mWの左回り円偏光で再
生したところ、情報記録部では顕著な反射率上昇
があり、S/N〜50dBの高S/Nで再生できた。
一方、右回りの円偏光、又は無偏光で再生したと
ころほとんどS/Nが得られなかつた。Example 2 Writing was performed on a medium having the same configuration as in Example 1 except that the selective reflection wavelength of the polymer liquid crystal was adjusted to 550 nm using pulsed light of 5 mW and 80 μs, and a color change based on a change in pitch length was observed. When reproduced with 1 mW of left-handed circularly polarized light, there was a noticeable increase in reflectance in the information recording section, and reproduction was possible with a high S/N of ~50 dB.
On the other hand, when reproduction was performed using clockwise circularly polarized light or non-polarized light, almost no S/N ratio was obtained.
なお、入射パワ−密度を25〜65mJ/cm2間で連
続的に変化させたところ、前記入射エネルギー密
度に対応して反射率の連続的上昇が見られた。こ
れより入射エネルギーの多値的制御による、多値
記録の可能性が判明した。前記記録部は70℃以上
の加熱により消去できた。 Note that when the incident power density was continuously changed from 25 to 65 mJ/cm 2 , a continuous increase in reflectance was observed corresponding to the incident energy density. This revealed the possibility of multilevel recording through multilevel control of incident energy. The recorded portion could be erased by heating at 70° C. or higher.
(発明の効果)
前述の如く、本発明により60dBと高S/N比
を実現できる高分子液晶の光記録媒体の読出方法
を提供することができた。(Effects of the Invention) As described above, the present invention makes it possible to provide a reading method for a polymer liquid crystal optical recording medium that can achieve a high S/N ratio of 60 dB.
図は本発明の実施例に用いた記録媒体の模式的
断面略図である。図において、
1……支持基板、2……光吸収層、3……高分
子液晶、4……保護層、5……光ビーム、6……
光ビームの偏光方向。
The figure is a schematic cross-sectional view of a recording medium used in an example of the present invention. In the figure, 1... Support substrate, 2... Light absorption layer, 3... Polymer liquid crystal, 4... Protective layer, 5... Light beam, 6...
Polarization direction of a light beam.
Claims (1)
に照射することで情報を記録消去し、光ビームの
反射率、もしくは透過率の変化により情報を読み
出す光記録の読出方法であつて、可視光から近赤
外光波長域に選択反射されるようにラセンピツチ
を調整したコレステリツク性高分子液晶から成る
光記録層を有する光記録媒体に、前記コレステリ
ツク性高分子液晶のラセンピツチの回転方向と同
方向に回転する円偏光を照射しその反射光または
透過光の変化を検出することを特徴とする光記録
読出方法。1 An optical recording reading method in which information is recorded and erased by irradiating an optical recording medium with a light beam focused on a minute spot, and the information is read out by changing the reflectance or transmittance of the light beam. An optical recording medium having an optical recording layer made of a cholesteric polymer liquid crystal whose helical pitch has been adjusted so as to selectively reflect light in the near-infrared wavelength region is rotated in the same direction as the rotational direction of the helical pitch of the cholesteric polymer liquid crystal. 1. An optical recording and reading method characterized by irradiating circularly polarized light and detecting changes in reflected light or transmitted light.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61002459A JPS62162254A (en) | 1986-01-09 | 1986-01-09 | Optical recording and reading method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61002459A JPS62162254A (en) | 1986-01-09 | 1986-01-09 | Optical recording and reading method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62162254A JPS62162254A (en) | 1987-07-18 |
JPH0453195B2 true JPH0453195B2 (en) | 1992-08-25 |
Family
ID=11529883
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61002459A Granted JPS62162254A (en) | 1986-01-09 | 1986-01-09 | Optical recording and reading method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62162254A (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2630044B2 (en) * | 1990-07-17 | 1997-07-16 | 凸版印刷株式会社 | Reversible thermosensitive recording medium and manufacturing method thereof |
JP2630045B2 (en) * | 1990-09-21 | 1997-07-16 | 凸版印刷株式会社 | Reversible thermosensitive recording medium and manufacturing method thereof |
JPH04295820A (en) * | 1991-03-26 | 1992-10-20 | Toppan Printing Co Ltd | Rewritable heat sensitive recording medium |
DE4137943A1 (en) * | 1991-11-18 | 1993-05-19 | Consortium Elektrochem Ind | OPTICAL ELEMENTS BASED ON LIQUID CRYSTALLINE HELICAL SUBSTANCES WITH REFLECTIVE BANDS OF LINEAR POLARIZED LIGHTS AND A METHOD FOR THEIR PRODUCTION |
US6686017B2 (en) * | 2001-02-28 | 2004-02-03 | Matsushita Electric Industrial Co., Ltd. | Optical recording film, method for manufacturing the same, optical recording medium, method for manufacturing the same, optical recording method, information recording/reproducing apparatus, information reproducing/recording method, computer system and video signal recording/reproducing system |
JP4845278B2 (en) * | 2001-03-14 | 2011-12-28 | 株式会社リコー | Optical recording method of image showing selective reflection color |
-
1986
- 1986-01-09 JP JP61002459A patent/JPS62162254A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS62162254A (en) | 1987-07-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6226258B1 (en) | Optical recording medium with transmissivity controlling layer | |
US5491003A (en) | Method for manufacturing an optical recording film composed of a metal and an oxide which can undergo an oxidation-reduction reaction upon exposure to a laser beam | |
KR100719431B1 (en) | Optical recording medium and recording and/or reproducing apparatus employing the optical recording medium | |
JPH0453195B2 (en) | ||
JPH0428239B2 (en) | ||
JPS5935989A (en) | Information recording medium | |
JPH0441915B2 (en) | ||
JP2515566B2 (en) | Storage media | |
JPH0441916B2 (en) | ||
JPH03120625A (en) | Information recording and reproducing device | |
JPH0441917B2 (en) | ||
US5862122A (en) | Phase change optical disk and a method for recording and playbacking optical information on or from an optical disk | |
JP3080454B2 (en) | Card type optical recording medium and manufacturing method thereof | |
JPH0273537A (en) | Optical information recording medium | |
US6117511A (en) | Optical recording media | |
JP3399033B2 (en) | Method for producing optical information recording carrier | |
JP2678219B2 (en) | Method of fixing data to optical recording medium, optical recording medium, and data recording device | |
KR100186525B1 (en) | Structure for phase change type optical disk | |
JP2811603B2 (en) | Optical information recording medium | |
JPS62107448A (en) | Optical recording system | |
JPH0581016B2 (en) | ||
JP2632920B2 (en) | Recording method, recording medium and recording device | |
JPH07210874A (en) | Optical recording medium and its reproducing device | |
JPH0917028A (en) | Optical information recording medium and its information reproducing method | |
JPS62231438A (en) | Optical recording medium |