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JPH04333222A - Thermal diffusion treatment device - Google Patents

Thermal diffusion treatment device

Info

Publication number
JPH04333222A
JPH04333222A JP10297191A JP10297191A JPH04333222A JP H04333222 A JPH04333222 A JP H04333222A JP 10297191 A JP10297191 A JP 10297191A JP 10297191 A JP10297191 A JP 10297191A JP H04333222 A JPH04333222 A JP H04333222A
Authority
JP
Japan
Prior art keywords
heater
core tube
furnace core
temperature
thermal diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10297191A
Other languages
Japanese (ja)
Inventor
Tatsuya Tomita
達也 冨田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Yamaguchi Ltd
Original Assignee
NEC Yamaguchi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Yamaguchi Ltd filed Critical NEC Yamaguchi Ltd
Priority to JP10297191A priority Critical patent/JPH04333222A/en
Publication of JPH04333222A publication Critical patent/JPH04333222A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve the quality of a wafer by a method wherein the temperature of a furnace core tube is quickly dropped by interrupting the radiant heat generated between the furnace core tube and a heater. CONSTITUTION:A shielding plate 3 is inserted between a furnace core tube 1 and a heater 2, radiant heat is shut off, and the temperature of the furnace core tube is quickly dropped.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は半導体ウェハーの熱拡散
処理装置に関し、特に急速降温の機構を有する熱拡散処
理装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermal diffusion processing apparatus for semiconductor wafers, and more particularly to a thermal diffusion processing apparatus having a rapid temperature cooling mechanism.

【0002】0002

【従来の技術】従来の熱拡散処理装置(以下、処理装置
とする)では、図4の断面図に示すように、ヒーター2
への電力を切ることにより降温を行なったり、又はこれ
と合わせて炉芯管1とヒーター2との間に空気導入口4
より空気を導入し、空冷することによって降温を行なっ
ていた。
[Prior Art] In a conventional thermal diffusion processing apparatus (hereinafter referred to as processing apparatus), as shown in the cross-sectional view of FIG.
The temperature can be lowered by cutting off the power to the furnace core tube 1 and the heater 2.
The temperature was lowered by introducing more air and air cooling.

【0003】0003

【発明が解決しようとする課題】上述した従来の処理装
置では、ヒーターへの電力を切ることにより降温を行な
ったり、これと合わせて空気導入口より炉芯管とヒータ
ーとの間に空気を導入し降温を行なっているが、炉芯管
とヒーターは隔離されていないのでヒーターからの輻射
熱の為、急速に降温できないという問題があり、そのた
めウェハー処理時間を要し、また出炉中の酸化による膜
質の劣化が生じていた。
[Problems to be Solved by the Invention] In the conventional processing equipment described above, the temperature is lowered by cutting off the power to the heater, and at the same time, air is introduced between the furnace core tube and the heater through the air inlet. However, since the furnace core tube and heater are not isolated, there is a problem that the temperature cannot be lowered rapidly due to radiant heat from the heater, which increases the wafer processing time and also reduces the film quality due to oxidation during unloading. deterioration had occurred.

【0004】0004

【課題を解決するための手段】本発明の処理装置は、遮
蔽板を炉芯管とヒータとの間に挿入することにより、炉
芯管をヒーターから遮断し、輻射熱の影響を取り除き、
急速に降温することが可能な機構を有している。
[Means for Solving the Problems] The processing apparatus of the present invention inserts a shielding plate between the furnace core tube and the heater to isolate the furnace core tube from the heater and remove the influence of radiant heat.
It has a mechanism that can rapidly lower the temperature.

【0005】[0005]

【実施例】次に本発明について図面を参照して説明する
DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be explained with reference to the drawings.

【0006】図1は本発明の実施例1の断面図である。 炉芯管1とヒーター2との間に遮蔽板3を挿入し、ヒー
ター2からの輻射熱の影響を取り除き、炉芯管1とヒー
ター2との間に空気導入口4から空気を導入し、急速降
温を行なう。図2は急速降温を行なわない時の断面図で
あり、遮蔽板3は下降させて炉芯管1とヒーター2との
間には無い。遮蔽板3には耐熱性の板材を使用し、送り
ねじ等の上下機構を備えている。また図3は実施例2の
断面図であり、遮蔽板3の内面に断熱板5を取り付け熱
伝導の影響も取り除いている。
FIG. 1 is a sectional view of Embodiment 1 of the present invention. A shielding plate 3 is inserted between the furnace core tube 1 and the heater 2 to remove the influence of radiant heat from the heater 2, and air is introduced from the air inlet 4 between the furnace core tube 1 and the heater 2 to rapidly Cool down the temperature. FIG. 2 is a cross-sectional view when rapid temperature reduction is not performed, and the shielding plate 3 has been lowered and is no longer between the furnace core tube 1 and the heater 2. The shielding plate 3 is made of a heat-resistant plate material and is equipped with a vertical mechanism such as a feed screw. Further, FIG. 3 is a sectional view of the second embodiment, in which a heat insulating plate 5 is attached to the inner surface of the shielding plate 3 to eliminate the influence of heat conduction.

【0007】[0007]

【発明の効果】以上説明したように本発明は、遮蔽板を
炉芯管とヒーターとの間に挿入したので輻射熱の影響が
無くなり、従来よりも急速に降温することが可能となる
。これによりウェハー処理時間を著しく短縮できる。 また従来と同じ時間でより低い温度まで降温することが
可能なので、出炉中の酸化による膜質劣化の改善,炉内
位置での熱履歴改善により製品の品質向上という効果を
有する。
As explained above, in the present invention, since the shielding plate is inserted between the furnace core tube and the heater, the influence of radiant heat is eliminated, and the temperature can be lowered more rapidly than in the past. This can significantly reduce wafer processing time. In addition, since it is possible to lower the temperature to a lower temperature in the same time as conventional methods, it has the effect of improving product quality by improving film quality deterioration due to oxidation during unloading and improving the thermal history inside the furnace.

【図面の簡単な説明】[Brief explanation of the drawing]

【図1】本発明の実施例1の断面図である。FIG. 1 is a sectional view of Example 1 of the present invention.

【図2】実施例1で急速降温を行なわない時の断面図で
ある。
FIG. 2 is a cross-sectional view when rapid temperature reduction is not performed in Example 1.

【図3】本発明の実施例2の断面図である。FIG. 3 is a sectional view of Example 2 of the present invention.

【図4】従来の熱拡散処理装置の断面図である。FIG. 4 is a sectional view of a conventional thermal diffusion processing apparatus.

【符号の説明】[Explanation of symbols]

1    炉芯管 2    ヒーター 3    遮蔽板 4    空気導入口 5    断熱材 1 Furnace core tube 2 Heater 3. Shielding plate 4 Air intake port 5 Insulation material

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】  半導体ウェハーの熱拡散処理装置にお
いて、炉芯管とヒーターとの間に熱遮蔽板を挿入自在と
したことを特徴とする熱拡散処理装置。
1. A thermal diffusion processing apparatus for semiconductor wafers, characterized in that a heat shielding plate can be freely inserted between a furnace core tube and a heater.
JP10297191A 1991-05-09 1991-05-09 Thermal diffusion treatment device Pending JPH04333222A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10297191A JPH04333222A (en) 1991-05-09 1991-05-09 Thermal diffusion treatment device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10297191A JPH04333222A (en) 1991-05-09 1991-05-09 Thermal diffusion treatment device

Publications (1)

Publication Number Publication Date
JPH04333222A true JPH04333222A (en) 1992-11-20

Family

ID=14341646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10297191A Pending JPH04333222A (en) 1991-05-09 1991-05-09 Thermal diffusion treatment device

Country Status (1)

Country Link
JP (1) JPH04333222A (en)

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