JPH04305244A - Illuminator and light exciting processing device with the same - Google Patents

Abstract

PURPOSE:To provide an illuminator capable of irradiating a large area with uniformized high illuminance light. CONSTITUTION:The illuminator is provided with a light source part, an integrator part by which the light generated at the light source is enlarged and uniformized, and a collimator lens 104 by which the light enlarged and uniformized at the integrator part is made to a parallel luminous flux. It is a reflecting member in which the light generated at the light source part is reflected to the collimator lens by the integrator.

Description

[Detailed description of the invention]

0001

[Field of Industrial Application] The present invention relates to a lighting device, and in particular,
The present invention relates to an illumination device for a photoexcitation process device used in the manufacture of semiconductor devices, electronic circuits, etc., and required to uniformly irradiate a large-area substrate with high-intensity light with little chromatic aberration.

0002

2. Description of the Related Art Optical excitation process equipment is expected to be put into practical use as a manufacturing process equipment for semiconductor elements and electronic circuits, especially VLSIs, since it is theoretically possible to perform processing at low temperatures and with little damage. Optical excitation process equipment is currently being applied to cleaning equipment and annealing equipment, and further applications to film forming equipment, etching equipment, etc. are being considered. In recent years, as the area of VLSI manufacturing processes has become larger, lighting devices for optically excited process devices are also required to have larger areas while maintaining high illuminance and uniformity.

FIG. 5 is a sectional view showing the structure of a conventional illumination device used in a photoexcitation process device.

The one shown in FIG. 5 is of a multi-lamp array type, and is composed of a large number of rod-shaped lamps 501 arranged and a plurality of rear mirrors 502 provided at the back of each rod-shaped lamp 501. The light generated by each lamp 501 is directly or reflected by a rear mirror 502 and introduced into a processing chamber (not shown) installed below.

FIG. 6 is a sectional view showing the structure of another conventional example, and shows a flywheel lens type.

The light generated by the point lamp 601 and made into a substantially parallel beam by a rear mirror 602 provided at the back of the point lamp 601 is passed through a flywheel lens 603 in which minute lenses are arranged two-dimensionally and a collimator. lens 6
04 and is introduced into a processing chamber (not shown) installed below. At this time, the light is expanded and made uniform by passing through the flywheel lens 603, and is made into a parallel light beam by passing through the collimator lens 604.

[0007]

However, among the conventional examples mentioned above, the multi-lamp array type requires a large number of lamps, resulting in high cost, and also requires a large number of lamps to be covered in order to make the illuminance uniform. There is a problem in that when the treated substrate is removed from the lamp, the illumination intensity drops rapidly. In the flywheel lens type, all of the light generated by the dot lamp passes through the flywheel lens, so if the light intensity of the dot lamp is increased, the flywheel lens will overheat and become cloudy, resulting in a decrease in transmittance. Further, when a broadband lamp is used, there is a problem that the degree of uniformity is not constant due to chromatic aberration.

SUMMARY OF THE INVENTION An object of the present invention is to solve the problems of the prior art and to provide a lighting device capable of irradiating uniform high-intensity light over a wide area.

[0009]

[Means for Solving the Problems] The lighting device of the present invention includes a light source section, an integrator section that enlarges and homogenizes the light generated by the light source section, and a parallel light source that enlarges and homogenizes the light generated by the integrator section. The illumination device includes a collimator lens that produces a luminous flux, and the integrator section is a reflecting member that reflects light generated in the light source section toward the collimator lens.

[0010] In this case, the integrator section may be composed of a plurality of elements having reflective surfaces that produce a diffusing effect, and each of the elements may be arranged such that the respective reflective surfaces are arranged periodically.

[0011]

[Operation] Since the integrator section that enlarges and makes the light uniform is a reflective member, it is not heated by the light generated in the light source section. For example, by using an integrator section, which is a reflective optical element in which parts of a spherical surface with a radius of 5 to 100 mm are arranged periodically, instead of a conventional flywheel lens, the light intensity will decrease even when the lamp intensity is increased. This makes it possible to create an illumination device for optically excitation processes with no chromatic aberrations.

0012

Embodiments Next, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 is a sectional view showing the structure of an embodiment of the present invention.

[0014] In this embodiment, the lamp 101 and the lamp 101
a rear mirror 102 that is provided on the back of the lamp 101 and constitutes a light source section, a mirror integrator 103 that is an integrator section that enlarges and homogenizes and reflects direct light from the lamp 101 or light reflected by the rear mirror 102; A collimator lens 104 converts the light reflected by the mirror integrator 103 into a substantially parallel light beam.

FIG. 2(a) is a sectional view showing the structure of the mirror integrator 103 in FIG. 1, and FIG. 2(b) is a plan view thereof.

The mirror integrator 103 that enlarges, homogenizes, and reflects light is composed of a plurality of hexagonal columnar elements 206 whose upper surfaces serve as reflective surfaces 207, and a case 205 that accommodates each element 206 so that its side surfaces are in contact with each other. has been done. Note that only one element 206 is shown in FIG. 2(b) for simplicity. The reflective surface 207, which is the upper surface of each element 206, is rounded so that reflected light is diffused. As a result, the reflecting surfaces 207 that produce a diffusing effect are periodically disposed on the reflecting surface serving as the mirror integrator 103. Therefore, the light generated by the lamp 101, reflected by the mirror integrator 103, and incident on the collimator lens 104 is expanded and made uniform, and is converted into a parallel beam by passing through the collimator lens 104 and enters the processing chamber. It is incident.

In this embodiment, the light is expanded and made uniform by being reflected by the mirror integrator as described above, so that the illuminance of the lamp can be increased and the illuminance can be made uniform over a large area of the substrate. It was possible to efficiently irradiate high-intensity light.

It is preferable that the lamp 101 be a point light source, and an appropriate one may be selected from high-pressure Hg lamps, Xe-Hg lamps, Xe lamps, etc. depending on the purpose. In this example, a high pressure Hg lamp was used. Further, it is desirable that the rear mirror 102 converts the light generated by the lamp 101 into a parallel beam. Note that when a laser having a parallel light beam is used as a light source, the rear mirror 102 is unnecessary.

Although the reflective surface of the mirror integrator 103 has been described as being composed of the reflective surfaces 207 of the plurality of elements 206, this is done in order to provide the reflective surface with a predetermined precision and to facilitate manufacturing. That's what I did. The method for manufacturing the mirror integrator is not limited to this method, and a mirror may be deposited after forming a similar periodic reflective surface.

The shape of each reflective surface 207 of each element 206 constituting the mirror integrator 103 is preferably spherical because it is easy to form. The radius of each spherical surface is approximately determined by the size of the base and the distance between the mirror integrator 103 and the collimator lens 104, and is approximately 5 to 100 mm. For example, when the size of each element 206 is 6 mm, the size of the base is φ6'', and the distance between the mirror integrator 103 and the collimator lens 104 is 350 mm,
A radius of about 28 mm is appropriate. The shape of each element 206 of the mirror integrator 103 is not limited to the hexagonal column shape as in this embodiment, but may be circular, for example. However, in order to make the reflected light uniform, a shape that can be packed most densely (for example, a hexagonal columnar shape or a prismatic columnar shape as in this embodiment) is desirable. The reflective surface 207 is preferably made of various metals, especially A1, which has a high reflectance in the visible and ultraviolet region.

Next, an embodiment in which the present invention is applied to a photo-CVD apparatus will be described with reference to FIG.

The light generated by the lamp 101 is made into a uniform parallel light beam by the mirror integrator 103 and the collimator lens 104, and is introduced into the reaction chamber 307 through the light introduction window 313 made of quartz. The base body 308 is placed on a support body 309 that is heated by a heater 310 provided at the bottom thereof. Raw material gas 31 for processing
2 is introduced into the reaction chamber 307 from a portion near the substrate 308, and after reacting with the substrate 308, it is released into the reaction chamber 3 as an exhaust gas 311.
It is discharged from 07.

Next, the film forming operation in this embodiment will be explained.

First, the base body 308 is placed on the support body 309 . Subsequently, a current is applied to the heater 310 to heat the base 308 to a desired temperature between room temperature and several hundred degrees Celsius. next,
The raw material gas 312 is caused to flow, and the inside of the reaction chamber 307 is brought to zero by a conductance valve (not shown) provided on the exhaust gas 311 side.
．． Maintain the desired pressure between 1 Torr and 100 Torr. Thereafter, the lamp 101 is turned on and film formation is performed until a desired film thickness is obtained.

A high-pressure mercury lamp is used as the lamp 101, and Si2 H6 is used as the raw material gas 312 at 20 sccm.
NH3 was supplied at 200 sccm, the pressure was 5 Torr, the substrate temperature was 300°C, and the illuminance was 130 mW/cm2.
A film was formed on a 6″ substrate. As a result, a high quality SiN film was formed at a relatively high speed of 20 nm/min. with a uniformity of ±3%.

By changing the raw material gas, SiN, S
Insulators such as iO2, Ta2O5, Al2O3, and AlN, semiconductors such as a-Si, poly-Si, and GaAs, and metals such as Al and W can be formed.

Next, the present invention will be described using photo-assisted plasma CVD.
An example applied to an apparatus will be described with reference to FIG. 4.

In this embodiment, a ring-shaped high frequency electrode 411 which is plasma generating means and receives power from a high frequency power source 412 is arranged around the outer periphery of the reaction chamber 307. A magnet 413 is provided as a magnetic field generating means for generating a magnetic field perpendicular to the generated electric field. In addition, the raw material gas for processing the substrate 308 includes a raw material gas 312 introduced from a portion near the substrate 308 in the reaction chamber 307, and a plasma gas 312 introduced into the reaction chamber 307 in the vicinity of the substrate 308, as in the embodiment shown in FIG. 3
There is also a second raw material gas 414 introduced from the upper part of the reaction chamber 307 so as to reach the second raw material gas 414. Other configurations are shown in Figure 3.
Since it is almost the same as the embodiment shown in FIG. 3, the same reference numerals as in FIG. 3 will be given and the explanation will be omitted.

Next, the film forming operation in this embodiment will be explained.

First, the base 308 is placed on the support 309, the lamp 101 is turned on, and a current is applied to the heater 310 to heat the base 308 to a desired temperature between room temperature and several hundred degrees Celsius. Next, the raw material gas 312 and the second raw material gas 414 are caused to flow, and the inside of the reaction chamber 307 is heated at 10 mT using a conductance valve (not shown) provided on the exhaust gas 311 side.
Maintain the desired pressure between orr and 1 Torr. Furthermore, in the presence of a magnetron magnetic field of several hundred G by the magnet 413, high-frequency power generated by the high-frequency power source 412 is supplied to the high-frequency electrode 411 to generate localized plasma near the high-frequency electrode 411, thereby obtaining the desired film thickness. Film formation is continued until it is completed.

A Xe lamp is used as the lamp 101, and TEOS (tetraethoxysilane) is used as the source gas 312.
100 sccm, O2 as the second raw material gas 414
500sccm, pressure 0.1Torr, substrate temperature 300℃, illuminance 0.6W/cm2, high frequency power 50
A film was formed on a φ6" substrate under the conditions of 0W and magnetic flux density of 130G.As a result, the hydrogen content was 1 atm% or less, the stress was 2 x 108 dyne/cm2 tension, and high quality SiO was formed.
2 The film was processed at 180 nm/min. with a uniformity of ±3%.
The film was formed at high speed.

By changing the raw material gas, SiN, S
Insulators such as iO2, Ta2O5, Al2O3, and AlN, semiconductors such as a-Si, poly-Si, and GaAs, and metals such as Al and W can be formed.

Of the above measured values, the density was determined from the refractive index measured by ellipsometry, the composition ratio measured by Auger electron spectroscopy, and the Lorentz-Lorentz relational expression.・Hydrogen content is determined by Si-H, N- in the infrared absorption spectrum.
The absorbance of the H band was divided by the absorption coefficient.・Stress was determined from changes in the warpage of the substrate before and after film formation, as measured by an interferometer.

[0034]

[Effects of the Invention] Since the present invention is constructed as described above, it produces the following effects.

[0035] In the device according to claim 1, the light intensity does not decrease significantly and chromatic aberration does not occur, so the light intensity generated by the lamp can be increased, and high illuminance is uniformly distributed over a wide area. There is an effect that can be done with light.

According to the second aspect of the present invention, an integrator section having the above-mentioned effects can be easily manufactured.

In the third aspect, since high-intensity light uniformized over a wide area is used as light for optical excitation, an optical excitation process device capable of high performance and high-speed processing is realized. There is an effect that can be done.

[Brief explanation of drawings]

FIG. 1 is a sectional view showing the configuration of an embodiment of the present invention.

[Fig. 2] (a) shows the mirror integrator 103 in Fig. 1.
A cross-sectional view showing the configuration of the device, and (b) a plan view thereof.

FIG. 3 is a diagram showing the configuration of an embodiment in which the present invention is applied to a photo-CVD apparatus.

FIG. 4 is a diagram showing the configuration of an embodiment in which the present invention is applied to an optically assisted plasma CVD apparatus.

FIG. 5 is a diagram showing the configuration of a conventional example of a multi-lamp array type.

FIG. 6 is a diagram showing the configuration of a conventional example of a flywheel lens type.

[Explanation of symbols]

101 Lamp 102 Rear mirror 103 Mirror integrator 104 Collimator lens 205 Case 206 Element 207 Reflective surface 307 Reaction chamber 308 Base 309 Support 310 Heater 311 Exhaust 312 Raw material gas 313 Light introduction window 411 High frequency electrode 412 High frequency power supply 413 Magnet 414 Second source gas

Claims (3)

[Claims] 1. An illumination device comprising a light source section, an integrator section that enlarges and homogenizes the light generated by the light source section, and a collimator lens that converts the light enlarged and homogenized in the integrator section into a parallel light beam. The lighting device, wherein the integrator section is a reflecting member that reflects light generated in the light source section toward a collimator lens. 2. The integrator section is composed of a plurality of elements each having a reflective surface that produces a diffusion effect, and each of the elements is arranged such that each of the reflective surfaces is arranged periodically. lighting equipment. 3. A photoexcitation process device, characterized in that the illumination device according to claim 1 or 2 is used as a light source for excitation.