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JPH0412428A - Fuse element - Google Patents

Fuse element

Info

Publication number
JPH0412428A
JPH0412428A JP11365290A JP11365290A JPH0412428A JP H0412428 A JPH0412428 A JP H0412428A JP 11365290 A JP11365290 A JP 11365290A JP 11365290 A JP11365290 A JP 11365290A JP H0412428 A JPH0412428 A JP H0412428A
Authority
JP
Japan
Prior art keywords
melting point
fuse element
oxide film
point fusible
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11365290A
Other languages
Japanese (ja)
Other versions
JP2860819B2 (en
Inventor
Tomokuni Mitsui
朋晋 三井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Uchihashi Estec Co Ltd
Original Assignee
Uchihashi Estec Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Uchihashi Estec Co Ltd filed Critical Uchihashi Estec Co Ltd
Priority to JP2113652A priority Critical patent/JP2860819B2/en
Publication of JPH0412428A publication Critical patent/JPH0412428A/en
Application granted granted Critical
Publication of JP2860819B2 publication Critical patent/JP2860819B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/02Details
    • H01H85/04Fuses, i.e. expendable parts of the protective device, e.g. cartridges
    • H01H85/05Component parts thereof
    • H01H85/055Fusible members
    • H01H85/06Fusible members characterised by the fusible material

Landscapes

  • Fuses (AREA)

Abstract

PURPOSE:To use a low-melting point fusible alloy wire as a wire fuse element by providing an oxide film on the surface of a low-melting point fusible alloy body, and specifying the oxygen quantity of the oxide film. CONSTITUTION:An oxide film is provided on the surface of a low-melting point fusible alloy body with the melting point 230-330 deg.C, and the oxygen quantity for the surface area 1cm is set to 3.0ppm or less, and the oxygen quantity per 1gr is set to 50ppm or less. A binary or higher alloy of Pb and Sn, In, Sb, Bi, Cd, Zn, Pd, Pt, Ag, Au, Cu is used for the low-melting point fusible metal. The alloy composition with a small temperature difference between a liquid phase wire and a solid phase wire is used from the viewpoint of the quick open property of a fuse element and the stability of a system. The fuse element is formed into a wire shape or ribbon shape.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は電流ヒユーズに使用するヒユーズエレメントに
関するものである。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a fuse element used in a current fuse.

(従来の技術) 電流ヒユーズにおいては、過電流が流れると、ヒユーズ
エレメント自体のジュール熱によってヒユーズエレメン
トが溶断し、通電を遮断する。
(Prior Art) In a current fuse, when an overcurrent flows, the fuse element melts due to the Joule heat of the fuse element itself, cutting off current flow.

ところで、電子部品を搭載した回路基板髪、当該基板に
装着した電流ヒユーズによって保護する場合、電流ヒユ
ーズエレメントの溶融温度が余り高いと、ヒユーズエレ
メントの溶断時に、回路基板が熱的に損傷しやすく、回
路基板の継続使用が不可能となる。
By the way, when a circuit board equipped with electronic components is protected by a current fuse attached to the board, if the melting temperature of the current fuse element is too high, the circuit board is likely to be thermally damaged when the fuse element melts. Continued use of the circuit board becomes impossible.

従って、電流ヒユーズエレメントには、比較的融点の低
い低融点可溶合金を使用することが望ましく、その融点
は回路基板のはんだ付は温度を勘案して250℃〜30
0℃にすることが妥当である。
Therefore, it is desirable to use a low melting point fusible alloy with a relatively low melting point for the current fuse element.
It is appropriate to set the temperature to 0°C.

しかしながら、回路基板を保護対象とする電流ヒユーズ
においては、電子部品のコンパクト性との均衡上、ヒユ
ーズニレメン1へを極細化する必要があり、かかる極細
の低融点可溶合金線では、引っ張り強度が弱く、ヒユー
ズの製作中、運搬中等でのヒユーズエレメントの断線が
懸念される。
However, in current fuses that protect circuit boards, it is necessary to make the fuse element 1 extremely thin in order to balance the compactness of electronic components, and such ultra-fine low melting point fusible alloy wires have low tensile strength. There is a concern that the fuse element may break during fuse manufacturing, transportation, etc.

本発明の目的は、低融点可溶合金線を電流ヒユーズエレ
メントとして使用可能ならしめることにある。
An object of the present invention is to enable a low melting point fusible alloy wire to be used as a current fuse element.

(課題を解決するための手段) 本発明に係わるヒユーズエレメントは融点が230℃〜
330℃の低融点可溶合金体の表面に酸化被膜を設け、
表面積1an”当たりの酸素量を3゜0 ppm以下で
且つ1g当たりの酸素量を50ppm以下としたことを
特徴とする構成である。
(Means for solving the problem) The fuse element according to the present invention has a melting point of 230°C ~
An oxide film is provided on the surface of the low melting point fusible alloy body at 330°C,
The structure is characterized in that the amount of oxygen per an inch of surface area is 3°0 ppm or less and the amount of oxygen per gram is 50 ppm or less.

(作用) 低融点可溶合金体表面の酸化被膜は、低融点可溶合金よ
りも硬く、従って、ヤング率が高く、ヒユーズエレメン
トに作用する力の相当部分を酸化被膜に負荷でき、低融
点可溶合金体に作用する応力を良く軽減できる。従って
、ヒユーズエレメントの断線が生じにくくなる。また、
1g当たりの酸素量を50ppm以下としているので、
低融点可溶合金体の脆弱化を防止できる。更に、表面1
aT当たりの酸素量を3.Oppm以下としているので
、ヒユーズエレメントの溶断迅速性を充分保持でき、電
流ヒユーズの作動性を良く確保できる。
(Function) The oxide film on the surface of the low-melting point fusible alloy is harder than the low-melting point fusible alloy, and therefore has a high Young's modulus, and a considerable portion of the force acting on the fuse element can be applied to the oxide film, making the low melting point possible. The stress acting on the molten alloy can be effectively reduced. Therefore, disconnection of the fuse element is less likely to occur. Also,
Since the amount of oxygen per gram is 50 ppm or less,
It is possible to prevent weakening of the low melting point fusible alloy body. Furthermore, surface 1
The amount of oxygen per aT is 3. Since it is set to less than Oppm, the speed of blowing out the fuse element can be maintained sufficiently, and the operability of the current fuse can be ensured well.

(実施例の説明) 図面は本発明の一実施例を用いた電流ヒユーズの一例を
示している。
DESCRIPTION OF THE EMBODIMENTS The drawings show an example of a current fuse using an embodiment of the present invention.

図において、Aは本発明に係わるヒユーズエレメントを
示し、融点が2306C〜330℃の低融点可溶合金体
の表面に酸化被膜を設け、表面積1cIr12当たりの
酸素量を3.0ppm以下で且つ1g当たりの酸素量を
5Qppm以下としである。低融点可溶金属にはPbと
Sn、In、Sb、Bi、Cd、Zn、Pd、Pt、A
g、Au、Cuとの二元または二元以上の合金を用いる
ことができる。
In the figure, A indicates a fuse element according to the present invention, in which an oxide film is provided on the surface of a low melting point fusible alloy body with a melting point of 2306C to 330C, and the amount of oxygen per 1cIr12 surface area is 3.0ppm or less and per 1g. The amount of oxygen is 5Qppm or less. Low melting point soluble metals include Pb, Sn, In, Sb, Bi, Cd, Zn, Pd, Pt, A
A binary or more than binary alloy of g, Au, and Cu can be used.

合金組成には、ヒユーズエレメントの即断性、組織の安
定性などの面から、液相線と同相線との温度差の小さい
ものを使用することが好ましく、例えば、Pb95重景
%重量n5重量%(P b −5Snと略称し、以下こ
の表現法で全ての合金組成を表す。)、Pb−58n−
1,5Ag、Pb−2゜5Ag、Pb−5In、Pb−
5In−2,5Ag等を使用できる。ヒユーズエレメン
トの形状は、ワイヤー状、リボン状等になし得、ワイヤ
ー状の場合、線形は通常0.05〜0.3 mn+φ、
リボン状の場合厚は通常0.03−0.2mm、巾は通
常0.5−3.0mmである。
For the alloy composition, it is preferable to use an alloy with a small temperature difference between the liquidus line and the in-phase line from the viewpoints of quick disconnection of the fuse element, stability of the structure, etc. For example, Pb95 weight% weight n5 weight% (abbreviated as Pb-5Sn, hereinafter all alloy compositions will be expressed using this expression), Pb-58n-
1,5Ag, Pb-2゜5Ag, Pb-5In, Pb-
5In-2, 5Ag, etc. can be used. The shape of the fuse element can be wire-shaped, ribbon-shaped, etc., and in the case of wire-shaped, the linear shape is usually 0.05 to 0.3 mn+φ,
In the case of a ribbon, the thickness is usually 0.03-0.2 mm, and the width is usually 0.5-3.0 mm.

図において、2はセラミックス板等の絶縁基板、3.3
は、導体であり、銅箔と絶縁基板との積層板の銅箔のエ
ツチングによって形成できる。4.4は導体3.3には
んだ又は導電性接着剤5によって固着した電極であり、
これらの電極4.4間に上記ヒユーズエレメントAを溶
接(電気溶接、超音波溶接、レーザー溶接、冷間溶接)
によって橋設しである。上記はんだ付けに用いるはんだ
等の融点はヒユーズエレメントの融点よりも低くしであ
る。6は絶縁層、例えばエポキシ樹脂のモールド層であ
る。
In the figure, 2 is an insulating substrate such as a ceramic plate, 3.3
is a conductor and can be formed by etching the copper foil of a laminate of copper foil and an insulating substrate. 4.4 is an electrode fixed to the conductor 3.3 with solder or conductive adhesive 5;
Weld the above fuse element A between these electrodes 4.4 (electric welding, ultrasonic welding, laser welding, cold welding)
The bridge was established by The melting point of the solder used for the soldering is lower than the melting point of the fuse element. 6 is an insulating layer, for example a mold layer of epoxy resin.

上記ヒユーズエレメントAには、表面に酸化被膜を設け
てあり、この酸化被膜が低融点可溶合金体自体よりも硬
く、ヤング率が高いから、ヒユーズエレメントに作用す
る力の相当部分を酸化被膜に負荷でき、それだけ低融点
可溶合金体に作用する力従って、応力を良く減じうる。
The above fuse element A has an oxide film on its surface, and since this oxide film is harder than the low melting point fusible alloy itself and has a high Young's modulus, a considerable portion of the force acting on the fuse element is transferred to the oxide film. The higher the load, the more the force acting on the low melting point fusible alloy body, and therefore the stress can be better reduced.

また1g当たりの酸化量を50ppm以下に抑えである
から、ヒユーズエレメントの脆弱化を良く防止できる。
Furthermore, since the amount of oxidation per gram is suppressed to 50 ppm or less, weakening of the fuse element can be effectively prevented.

従って、ヒユーズエレメントを極細化しても、ヒユーズ
エレメントの断線を防止できる。
Therefore, even if the fuse element is made extremely thin, breakage of the fuse element can be prevented.

上記ヒユーズエレメントに過電流が流れると、ヒユーズ
エレメントはその過電流によるジュール熱によって溶断
する。この溶断温度を230℃〜330℃としであるか
ら、回路基板の熱的損傷を防止できる。この場合、表面
積fan2当たりの酸素量を50ppm以下に抑えであ
るから、溶断をスムーズに行わせえ、電流を迅速に遮断
でき、ヒユーズエレメントの表面に酸化被膜を設けたに
もかかわらず、電流ヒユーズの迅速作動性を良く保証で
きる。
When an overcurrent flows through the fuse element, the fuse element is blown out by Joule heat caused by the overcurrent. Since this fusing temperature is set at 230° C. to 330° C., thermal damage to the circuit board can be prevented. In this case, since the amount of oxygen per surface area fan2 is suppressed to 50 ppm or less, the fuse can be blown smoothly and the current can be cut off quickly. The rapid operation of the system can be well guaranteed.

このことは次ぎの試験結果からも明らかである。This is also clear from the following test results.

(試験結果) 低融点可溶合金体として、Pb−58n−1゜5Ag、
Pb−2,5Ag、Pb−5In、Pb−5In−2,
5Agを用い、表面積1 a+V当たりの酸素量2.8
ppm〜3.0ppm、1g当たりの酸素量45 pp
m〜50 ppm、線径0.1mmのヒユーズエレメン
トを製作した。これらのヒューズエレメントを用い、図
において、セラミックス基板の厚みを約0 、6 nu
n、エポキシ樹脂の厚みを約2.0mmにして電流ヒユ
ーズを製作した。これらの各電流ヒユーズにおいて、そ
の電流ヒユーズのヒユーズエレメント(低融点可溶合金
)の融点よりも2〜3℃高い温度のバス中に浸漬し、該
浸漬後からヒユーズ溶断時までの時間を測定したところ
、全て2゜0秒以下であった。
(Test results) As a low melting point fusible alloy body, Pb-58n-1゜5Ag,
Pb-2,5Ag, Pb-5In, Pb-5In-2,
Using 5Ag, the amount of oxygen per surface area 1 a+V is 2.8
ppm~3.0ppm, oxygen amount per 1g 45 ppm
A fuse element with a wire diameter of 0.1 mm and a wire diameter of 0.1 mm was manufactured. Using these fuse elements, the thickness of the ceramic substrate can be reduced to approximately 0.6 nu as shown in the figure.
A current fuse was manufactured using an epoxy resin with a thickness of approximately 2.0 mm. Each of these current fuses was immersed in a bath at a temperature 2 to 3 degrees Celsius higher than the melting point of the fuse element (low melting point fusible alloy) of the current fuse, and the time from the immersion until the fuse was blown was measured. However, all the times were less than 2°0 seconds.

本発明に係わるヒユーズエレメントにおいて、溶接性の
向上、酸化進行の抑制のために、酸化被膜上にAg又は
ΔUを蒸着、メツキ等により被覆しても良い。
In the fuse element according to the present invention, Ag or ΔU may be coated on the oxide film by vapor deposition, plating, etc. in order to improve weldability and suppress progress of oxidation.

また、ヒユーズエレメントを回路基板の導体間に直接、
溶接、はんだ付けなどにより橋設することもできる。
In addition, the fuse element can be placed directly between the conductors of the circuit board.
Bridges can also be constructed by welding, soldering, etc.

(発明の効果) 本発明に係わるヒユーズエレメントは、上述したとおり
の構成であり、低融点可溶合金体の表面に酸化被膜を、
ヒユーズエレメントの即断性を充分に保持させうる範囲
内の厚みで形成しであるから、ヒユーズの作動性を良く
保証して低融点可溶合金体(ヒユーズエレメント)の強
度を増強でき、極細の低融点可溶合金線を電流ヒユーズ
エレメントとして使用できる。従って、回路基板のコン
バク1へ化を損なうことなく、ヒユーズ溶断時発生熱に
よる回路基板の熱的損傷を防止しうる。
(Effects of the Invention) The fuse element according to the present invention has the configuration as described above, and has an oxide film on the surface of the low melting point fusible alloy body.
Because the fuse element is formed with a thickness within a range that can sufficiently maintain the quick blowing property, it is possible to guarantee the operability of the fuse and increase the strength of the low melting point fusible alloy body (fuse element). Melting point fusible alloy wire can be used as the current fuse element. Therefore, thermal damage to the circuit board due to the heat generated when the fuse blows can be prevented without impairing the integrity of the circuit board.

【図面の簡単な説明】[Brief explanation of the drawing]

図面は本発明に係わるヒユーズニレメン1−を使用した
電流ヒユーズを示す説明図である。 A・・・ヒユーズエレメント
The drawing is an explanatory diagram showing a current fuse using the fuse element 1- according to the present invention. A... Fuse element

Claims (2)

【特許請求の範囲】[Claims] (1)融点が230〜330℃の低融点可溶合金体の表
面に酸化被膜を設け、表面積1cm^2当たりの酸素量
を3.0ppm以下で且つ1g当たりの酸素量を50p
pm以下としたことを特徴とするヒューズエレメント。
(1) An oxide film is provided on the surface of a low melting point fusible alloy body with a melting point of 230 to 330°C, and the amount of oxygen per 1 cm^2 of surface area is 3.0 ppm or less and the amount of oxygen per 1 g is 50 p.
A fuse element characterized by being less than pm.
(2)請求項(1)において、低融点可溶金属体が、P
bとSn、In、Sb、Bi、Cd、Zn、Pd、Pt
、Ag、Au、Cuとの二元または二元以上の合金であ
ることを特徴とするヒューズエレメント。
(2) In claim (1), the low melting point fusible metal body is P
b and Sn, In, Sb, Bi, Cd, Zn, Pd, Pt
, Ag, Au, and Cu.
JP2113652A 1990-04-27 1990-04-27 Fuse element Expired - Fee Related JP2860819B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2113652A JP2860819B2 (en) 1990-04-27 1990-04-27 Fuse element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2113652A JP2860819B2 (en) 1990-04-27 1990-04-27 Fuse element

Publications (2)

Publication Number Publication Date
JPH0412428A true JPH0412428A (en) 1992-01-17
JP2860819B2 JP2860819B2 (en) 1999-02-24

Family

ID=14617700

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2113652A Expired - Fee Related JP2860819B2 (en) 1990-04-27 1990-04-27 Fuse element

Country Status (1)

Country Link
JP (1) JP2860819B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000021278A (en) * 1998-06-30 2000-01-21 Yazaki Corp Low melting point material fusing device and circuit breaking device
JP2002260518A (en) * 2001-03-05 2002-09-13 Dowa Mining Co Ltd Zinc alloy for fuse, fuse and method for manufacturing fuse
US6774761B2 (en) * 2002-03-06 2004-08-10 Uchihashi Estec Co., Ltd. Alloy type thermal fuse and fuse element thereof
US6819215B2 (en) * 2002-03-06 2004-11-16 Uchihashi Estec Co., Ltd. Alloy type thermal fuse and fuse element thereof
US6963264B2 (en) * 2002-07-11 2005-11-08 Uchihashi Estec Co., Ltd. Alloy type thermal fuse and wire member for a thermal fuse element
US7042327B2 (en) * 2002-10-30 2006-05-09 Uchihashi Estec Co., Ltd. Alloy type thermal fuse and wire member for a thermal fuse element
KR100822184B1 (en) * 2001-09-19 2008-04-16 삼성에스디아이 주식회사 Thermal fuse for secondary cell
JP2013175361A (en) * 2012-02-24 2013-09-05 Kyocera Corp Current fuse and electronic apparatus

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000021278A (en) * 1998-06-30 2000-01-21 Yazaki Corp Low melting point material fusing device and circuit breaking device
JP2002260518A (en) * 2001-03-05 2002-09-13 Dowa Mining Co Ltd Zinc alloy for fuse, fuse and method for manufacturing fuse
KR100822184B1 (en) * 2001-09-19 2008-04-16 삼성에스디아이 주식회사 Thermal fuse for secondary cell
US6774761B2 (en) * 2002-03-06 2004-08-10 Uchihashi Estec Co., Ltd. Alloy type thermal fuse and fuse element thereof
US6819215B2 (en) * 2002-03-06 2004-11-16 Uchihashi Estec Co., Ltd. Alloy type thermal fuse and fuse element thereof
US6911892B2 (en) 2002-03-06 2005-06-28 Uchihashi Estec Co., Ltd. Alloy type thermal fuse and fuse element thereof
US6963264B2 (en) * 2002-07-11 2005-11-08 Uchihashi Estec Co., Ltd. Alloy type thermal fuse and wire member for a thermal fuse element
US7042327B2 (en) * 2002-10-30 2006-05-09 Uchihashi Estec Co., Ltd. Alloy type thermal fuse and wire member for a thermal fuse element
JP2013175361A (en) * 2012-02-24 2013-09-05 Kyocera Corp Current fuse and electronic apparatus

Also Published As

Publication number Publication date
JP2860819B2 (en) 1999-02-24

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