JP7623587B2 - Film removal equipment - Google Patents

Description

The present invention relates to a film removal device that uses plasma to remove a film from a workpiece on which a film has been formed.

Conventionally, there are known techniques for removing a coating from a workpiece (subject to be processed) on which a coating has been formed. For example, Patent Document 1 discloses a coating removal device that irradiates an ion flow onto a coating material to remove the coating from the coating material. The coating removal device described in Patent Document 1 places the coated coating material in an ion flow concentration area where two or more ion flows overlap, and removes the coating from the coating material by irradiating the ion flow onto the coating material.

International Publication No. 2016/163278

However, in the conventional technology described above, the coating material is placed in the ion flow concentration area for processing, which causes the coating material to become hot. In addition, the coating material is continuously irradiated with an ion flow, which causes the temperature of the coating material to rise significantly. Furthermore, in order to increase the amount of coating material to be removed, it is necessary to expand the area of the ion flow concentration area. In order to expand the area of the ion flow concentration area, it is necessary to enlarge the ion source. The coating removal device described in Patent Document 1 requires multiple ion sources, so in order to increase the amount of coating material to be removed, the multiple ion sources must be enlarged, which causes a problem of a significant increase in equipment costs.

One aspect of the present invention has been developed in consideration of the above-mentioned problems with the conventional technology, and aims to realize a film removal device that prevents the treated object from becoming too hot, reduces equipment costs, and has high treatment efficiency.

In order to solve the above-mentioned problems, a film removal device according to one aspect of the present invention includes a vacuum container that houses a workpiece therein, an antenna that is provided outside the vacuum container and generates a high-frequency magnetic field, a magnetic field introduction window provided on a wall surface of the vacuum container that introduces the high-frequency magnetic field into the vacuum container in order to generate plasma inside the vacuum container, and a stage that is installed inside the vacuum container and on which a plurality of the workpieces are placed, the stage including a first circular plate that rotates around a first central point that is the center, and A first disk is provided with a plurality of second disks arranged along the outer periphery of the first disk, each rotating around a second center point, which is the center of the first disk, and a plurality of holding members arranged on the second disk, each holding the workpiece. In a plan view, a perpendicular line passing through the center of the magnetic field introduction window and perpendicular to the magnetic field introduction window is located in a perpendicular arrangement region from a first tangent line tangent to the outer periphery of the first disk to a second tangent line tangent to the orbital circle of the second center point that is parallel to the first tangent line and located on the first tangent line side of the first center point.

One aspect of the present invention has been developed in consideration of the above-mentioned problems of the conventional art, and it is possible to realize a film removal device that prevents the workpiece from becoming too hot, reduces equipment costs, and has high processing efficiency.

1 is a plan view of a film removal device according to a first embodiment of the present invention. FIG. 2 is a cross-sectional view of the film removal apparatus, showing a combination of the AA section and the BB section of FIG. 1. FIG. 4 is a plan view of a magnetic field introduction window of the film removal device. 4 is a cross-sectional view of the magnetic field introduction window shown in FIG. 3 along the line CC. 13 is a plan view showing a modified example of the magnetic field introduction window of the film removal apparatus. FIG. 1 is a graph showing the relationship between the distance from the antenna and the plasma density. FIG. 2 is a plan view showing a plasma region of the film removal apparatus. FIG. 6 is a plan view of a film removal device according to a second embodiment of the present invention.

[Embodiment 1]
FIG. 1 is a plan view of a film removal apparatus 100 according to a first embodiment of the present invention. FIG. 2 is a cross-sectional view of the film removal apparatus 100 showing a combination of the A-A section and the B-B section in FIG. 1, where range M in FIG. 2 is the A-A cross-sectional view in FIG. 1, and range N in FIG. 2 is the B-B cross-sectional view in FIG. 1. The film removal apparatus 100 is a film removal apparatus that removes a coating from a processing object (workpiece W) on which a coating is formed, using plasma. The workpiece W is, for example, a metal part that is a base material, and a coating made of an inorganic substance is formed on the surface of the workpiece W. An embodiment of the present invention will be described in detail below.

[Configuration of the film removal device]
The schematic configuration of the film removal device 100 will be described with reference to Figures 1 and 2. In Figure 1, the direction from the plasma source 1 toward the vacuum vessel 10 is the x-axis direction, the direction in which the antenna 4 extends is the z-axis direction, and the direction perpendicular to the x-axis direction and the z-axis direction is the y-axis direction. In Figure 1, the holding member 40 is illustrated only on one second disk 30, and the holding members 40 provided on the other second disks 30 are omitted. In Figure 1, the workpiece W is illustrated only on one holding member 40, and the workpieces W held by the other holding members 40 are omitted. The same applies to Figures 7 and 8.

As shown in Figures 1 and 2, the film removal device 100 includes a plasma source 1 and a vacuum vessel 10.

(Plasma Source)
The plasma source 1 is an ICP (inductively coupled plasma device) that generates high density plasma by inductive coupling in a vacuum chamber 10. The plasma source 1 can generate high density plasma of, for example, 1e11 to 1e12/ ^cm3 .

The plasma source 1 is provided outside the vacuum vessel 10. The plasma source 1 includes a matching box 2, a shielding box 3, an antenna 4, and a magnetic field introduction window WR. The matching box 2 is an electric circuit that matches the power from the power source D1 according to the load. The matching box 2 efficiently transmits power from the power source D1 to the antenna 4. The shielding box 3 houses the antenna 4 and the magnetic field introduction window WR inside, and prevents the high-frequency magnetic field generated by the antenna 4 from leaking to the outside. The shielding box 3 is provided between the matching box 2 and the vacuum vessel 10. An opening 3b is formed in the wall surface 3a of the shielding box 3. The opening 3b is formed at a position corresponding to the opening 10b formed in the wall surface 10a of the vacuum vessel 10, so as to open larger than the opening 10b.

In this embodiment 1, the film removal device 100 is equipped with two plasma sources 1 in the x-axis direction, sandwiching the vacuum container 10, but this is not limited to the above. Since the film removal process can be performed with only one plasma source 1, it is sufficient for the film removal device 100 to be equipped with at least one plasma source 1.

(antenna)
The antenna 4 generates a high-frequency magnetic field. The antenna 4 is a metal pipe antenna extending in the Z direction, and is arranged in the shielding box 3 along the magnetic field introduction window WR. As shown in FIG. 2, the length L1 of the antenna 4 in the height direction (Z direction) of the workpiece W is longer than the height L2 of the workpiece W. This allows the workpiece W to be positioned within the area where plasma is generated even in the height direction of the workpiece W, so that the entire workpiece W can be subjected to the film removal treatment. By changing the length of the antenna 4, the film removal treatment area can be increased, and plasma can be generated according to the size of the workpiece W.

The antenna 4 can be curved as necessary. This allows the distance from each point on the antenna 4 to the magnetic field introduction window WR to be changed, and the plasma density in the z-axis direction generated inside the vacuum vessel 10 to be adjusted.

(Magnetic field introduction window)
The magnetic field introduction window WR introduces the high frequency magnetic field generated by the antenna 4 into the interior 11 of the vacuum vessel 10 in order to generate plasma inside the vacuum vessel 10. The magnetic field introduction window WR is constituted by a magnetic field introduction window component 5 and is a part of the magnetic field introduction window component 5. The magnetic field introduction window WR is disposed so as to be approximately parallel to the antenna 4. The magnetic field introduction window component 5 is disposed in an opening 3b formed in a wall surface 3a of the shielding box 3, and the magnetic field introduction window component 5 is provided on the wall surface 10a of the vacuum vessel 10 so as to cover the opening 10b of the vacuum vessel 10.

Figure 3 is a plan view of the magnetic field introduction window WR of the film removal device 100 when the plasma source 1 is viewed from the vacuum vessel 10 side. Figure 4 is a cross-sectional view taken along the line C-C of Figure 3. More specifically, cross-sectional view 1001 in Figure 4 shows a cross-sectional view taken along the line C-C of the film removal device 100, cross-sectional view variant 1002 shows a variant of cross-sectional view 1001, and cross-sectional view variant 1003 shows another variant of cross-sectional view 1001. Note that Figure 3 illustrates the antenna 4 so that the positional relationship between the magnetic field introduction window WR and the antenna 4 can be seen. Also, each view in Figure 4 illustrates the antenna 4, a part of the shielding box 3, and a part of the vacuum vessel 10 so that the positional relationship between the magnetic field introduction window WR, the antenna 4, the shielding box 3, and the vacuum vessel 10 can be seen.

As shown in the cross-sectional view 1001 of FIG. 3 and FIG. 4, the magnetic field introduction window component 5 includes a metal plate 6 and a dielectric plate 7. On the wall surface 3a of the shielding box 3, the metal plate 6 and the dielectric plate 7 are provided in this order as the magnetic field introduction window component 5 from the vacuum vessel 10 side toward the antenna 4 side.

As shown in the cross-sectional view 1001 of FIG. 4, the metal plate 6 is provided on the wall surface 10a of the vacuum vessel 10 so as to cover the opening 10b of the vacuum vessel 10. The metal plate 6 is also provided on the wall surface 10a of the vacuum vessel 10 by being placed in the opening 3b formed in the wall surface 3a of the shielding box 3.

As shown in the cross-sectional view 1001 of FIG. 3 and FIG. 4, the metal plate 6 has a plurality of slits 61 penetrating the metal plate 6 in the x-axis direction. Each of the plurality of slits 61 is a long and narrow rectangular opening extending in the y-axis direction. The plurality of slits 61 are also arranged in a line in the z-axis direction. The slits 61 are formed in the metal plate 6 so that the longitudinal direction of the antenna 4 and the longitudinal direction of the slits 61 are at right angles.

The dielectric plate 7 is placed in contact with the metal plate 6 from the atmospheric side (antenna 4 side) of the metal plate 6 so as to cover the multiple slits 61. The dielectric plate 7 is made of a dielectric material. The material constituting the dielectric plate 7 may be, for example, ceramics or glass. As shown in Figures 3 and 4, in the magnetic field introduction window component 5, the metal plate 6 and the dielectric plate 7 in the area where the slits 61 are formed form the magnetic field introduction window WR. In other words, the magnetic field introduction window WR is composed of the metal plate 6 having multiple slits 61 and the dielectric plate 7 covering the slits 61 placed on the atmospheric side of the metal plate 6.

The high-frequency magnetic field generated by the antenna 4 is supplied to the inside 11 of the vacuum vessel 10 through the dielectric plate 7 and the multiple slits 61 in the metal plate 6 at the magnetic field introduction window WR. Since the multiple slits 61 are blocked by the dielectric plate 7, the vacuum in the inside 11 of the vacuum vessel 10 is maintained.

By forming the magnetic field introduction window WR not only with the dielectric plate 7 but also with the metal plate 6 in which the slits 61 are formed, it is possible to increase the mechanical strength of the magnetic field introduction window WR while ensuring the function of introducing a high-frequency magnetic field into the vacuum vessel 10. This reduces the risk of the dielectric plate 7 being damaged.

In addition, by introducing a high-frequency magnetic field generated from an antenna 4 placed outside the vacuum vessel 10 into the interior 11 of the vacuum vessel 10 through the magnetic field introduction window WR, plasma can be generated inside the vacuum vessel 10. The plasma has a density distribution equivalent to the magnetic field distribution that is inversely proportional to the distance from the antenna 4 in the x-axis direction, and also has a highly directional distribution that spreads in the y-axis direction. This allows high-density plasma to be generated widely inside the vacuum vessel 10, allowing the workpiece W to be processed efficiently.

(Modification of the positional relationship between the magnetic field introduction window, the shielding box, and the vacuum vessel)
Based on the modified cross-sectional views 1002 and 1003 in FIG. 4, modified examples of the positional relationship between the magnetic field introduction window WR, the shield box 3, and the vacuum vessel 10 will be described.

As shown in the cross-sectional view modification 1002 of FIG. 4, in the film removal device 100, the opening 3b of the wall surface 3a of the shielding box 3 may be formed at a position corresponding to the opening 10b formed in the wall surface 10a of the vacuum vessel 10, with a size that is approximately the same as the opening 10b. In this case, the magnetic field introduction window component 5 is provided on the wall surface 3a of the shielding box 3 so as to cover the opening 3b formed in the wall surface 3a of the shielding box 3. More specifically, the metal plate 6 of the magnetic field introduction window component 5 that constitutes the magnetic field introduction window WR is provided on the wall surface 3a of the shielding box 3 so as to block the opening 3b. As described above, since the opening 3b is formed on the wall surface 3a of the shielding box 3 at a position corresponding to the opening 10b of the wall surface 10a of the vacuum vessel 10, the magnetic field introduction window WR, which is a part of the magnetic field introduction window component 5, can be regarded as being provided on the wall surface 10a of the vacuum vessel 10.

In addition, in the film removal apparatus 100, as shown in the cross-sectional view modification 1003 of FIG. 4, the shielding box 3 may be one in which the wall surface 3a on the vacuum vessel 10 side is open. In this case, the metal plate 6 of the magnetic field introduction window component 5 is installed on the wall surface 10a of the vacuum vessel 10 so as to cover the opening 10b formed in the wall surface 10a of the vacuum vessel 10. Furthermore, by installing the wall surface 3a on the surface of the metal plate 6 opposite the vacuum vessel 10 at a location other than the magnetic field introduction window WR, the shielding box 3 is installed on the wall surface 3a of the vacuum vessel 10 via the metal plate 6.

Even if the configuration of the C-C cross-sectional view of the film removal device 100 is changed to the configuration shown in cross-sectional view variants 1002 and 1003 in FIG. 4, the same effect can be achieved as with the film removal device 100 having the configuration shown in cross-sectional view 1001.

(Modification of the magnetic field introduction window)
A modified example of the magnetic field introduction window WR will be described with reference to Fig. 5. Fig. 5 is a plan view showing a magnetic field introduction window WRA, which is a modified example of the magnetic field introduction window WR of the film removal apparatus 100. Fig. 5 illustrates the antenna 4 so that the positional relationship between the magnetic field introduction window WRA and the antenna 4 can be understood. As shown in Fig. 5, the magnetic field introduction window WRA differs from the magnetic field introduction window WR in that it includes an opening 63 instead of the slit 61, but is otherwise similar to the magnetic field introduction window WR.

As shown in FIG. 5, the magnetic field introduction window component 5A includes a metal plate 6A and a dielectric plate 7. The metal plate 6A has one opening 63 corresponding to the opening 10b of the vacuum vessel 10. In the magnetic field introduction window component 5A, the metal plate 6A and the dielectric plate 7 in the area where the opening 63 is formed become the magnetic field introduction window WRA. In this case, the magnetic field introduction window WRA is essentially formed only by the dielectric plate 7. In other words, the magnetic field introduction window WRA that introduces a high-frequency magnetic field into the vacuum vessel 10 is composed of at least the dielectric plate 7. Even if the slit 61 is not formed in the metal plate 6 like the magnetic field introduction window WRA, plasma can be generated in the interior 11 of the vacuum vessel 10 by the plasma source 1. In this way, by providing the magnetic field introduction window WRA with an opening 63 of a size corresponding to the opening 10b of the vacuum vessel 10, many high-frequency magnetic fields can be introduced into the vacuum vessel 10.

(Vacuum vessel)
As shown in Figures 1 and 2, a vacuum vessel 10 accommodates a workpiece W in an interior 11. The interior 11 of the vacuum vessel 10 is evacuated by a vacuum pump 8, and a gas is introduced into the interior 11 of the vacuum vessel 10. The gas introduced into the interior 11 of the vacuum vessel 10 is not particularly specified, and any gas can be used as long as it can generate plasma capable of removing a film from the workpiece W. The vacuum vessel 10 is, for example, a box-shaped vessel made of metal. As described above, an opening 10b is formed in the wall surface 10a of the vacuum vessel 10, penetrating the vessel in the thickness direction. The vacuum vessel 10 is electrically grounded. A stage S is provided within the vacuum vessel 10.

(stage)
A plurality of workpieces W are placed on the stage S. The stage S has a first circular plate 20 and a second circular plate 30. The first circular plate 20 rotates around a first center point P1, which is the center. The first circular plate 20 rotates around the first center point P1 in, for example, the direction indicated by the arrow Q1.

The second disks 30 are provided on the first disk 20 along the outer periphery of the first disk 20. The second disks 30 rotate around the second center point P2, which is their respective centers. The second disks 30 rotate around the second center point P2 in the direction indicated by the arrow Q2, for example. As the first disk 20 rotates around the first center point P1, the second center point P2 moves on the orbital circle 32.

A plurality of holding members 40 are provided on the second disk 30 along the outer periphery of the second disk 30. Each of the plurality of holding members 40 holds a workpiece W. Furthermore, the holding members 40 rotate on their own axes. The holding members 40 rotate on their own axes, for example, in the direction indicated by the arrow Q3.

As shown in FIG. 2, the workpiece W is connected to a pulse power source D2 via a first disk 20, a second disk 30, and a holding member 40, and a bias voltage can be applied to the workpiece W. By using the bias voltage, for example, it is possible to control the energy when ions in the plasma in the vacuum vessel 10 are incident on the workpiece W, thereby controlling the removal of the film from the workpiece W.

The diameter of the second disk 30 is smaller than the radius of the first disk 20. This allows more workpieces W to be processed. In addition, in FIG. 1, the second disk 30 is inscribed in the first disk 20, but this is not limited to the above. For example, the second disk 30 may be positioned on the first disk 20 so that the second disk 30 is included within the first disk 20, or the second center point P2 of the second disk 30 may be positioned on the first disk 20, and a part of the outer periphery of the second disk 30 may be positioned outside the outer periphery of the first disk 20.

[Positional relationship between the magnetic field introduction window and the stage]
In a plan view in the z-axis direction (height direction of the workpiece W), the magnetic field introduction window WR and the stage S are disposed so that a perpendicular line VH that passes through the third center point P3 of the magnetic field introduction window WR and is perpendicular to the magnetic field introduction window WR touches the outer periphery of the first circular plate 20 at a tangent point T1. In other words, the perpendicular line VH coincides with the first tangent line H1 that touches the first circular plate 20 at the tangent point T1. The third center point P3 of the magnetic field introduction window WR roughly coincides with the center point of the antenna 4.

By arranging the magnetic field introduction window WR and stage S in this manner, many workpieces W can be included in the plasma region PR1 described below. This allows plasma processing to be performed on many workpieces W even with a single plasma source 1.

(Plasma region)
The plasma region PR1 will be described with reference to Fig. 6 and Fig. 7. The plasma region PR1 refers to the region where plasma is generated. Fig. 6 is a graph showing the relationship between the distance from the antenna 4 and the plasma density. The horizontal axis indicates the distance from the antenna 4, and the vertical axis indicates the plasma density. Fig. 7 is a plan view showing the plasma region PR1 of the film removal device 100.

The plasma region PR1 expands as the distance from the antenna 4 increases. However, as shown in FIG. 6, the plasma density decreases as the distance from the antenna 4 increases. If the plasma density becomes too low, the processing efficiency decreases. Therefore, the film removal device 100 uses a plasma density where the relative value of the plasma density is approximately 0.1 to 0.5. This makes it possible to perform the film removal process in a wide plasma region PR1 with high plasma density.

In addition, as shown in FIG. 6, the plasma density used in the film removal device 100 has a small gradient in plasma density relative to changes in distance from the antenna 4 and is stable, allowing for uniform film removal processing. Furthermore, because plasma with a relatively small plasma density is used, film removal processing can be performed without extreme changes in plasma density between the plasma region PR1 and the non-plasma generation region PR2 described below within the vacuum vessel 10.

The plasma region PR1 and the non-plasma generation region PR2, which is the region other than the plasma region PR1 in the vacuum vessel 10, are distributed, for example, as shown in Figure 7. As shown in Figure 7, if the magnetic field introduction window WR and stage S are positioned so that the contact point T1 is located at a position where the width L3 of the plasma region PR1 is approximately twice the width L4 of the slit 61, a plasma region PR1 with a stable plasma density can be formed.

[Operation]
First, the workpiece W is held by each holding member 40 on the second disk 30. Next, plasma is generated in the vacuum vessel 10 by the plasma source 1, the first disk 20 is rotated about the first center point P1, the second disk 30 is rotated about the second center point P2, and the holding members 40 are rotated on their axes.

By rotating the first circular plate 20 around the first center point P1, the workpiece W is alternately positioned between the plasma region PR1 and the plasma non-generation region PR2, as shown in FIG. 7. Therefore, the workpiece W is not continuously but intermittently exposed to the plasma inside 11 of the vacuum vessel 10. This allows the film removal process to proceed in the plasma region PR1, and the temperature rise of the workpiece W can be suppressed at the time when the workpiece W leaves the plasma region PR1, located in the plasma non-generation region PR2. In this way, in the film removal device 100, the workpiece W is able to leave the plasma region PR1 at a certain time, so that the workpiece W is less likely to become hot.

In addition, the second disk 30 rotates around the second center point P2 and the holding member 40 rotates on its axis, so that the workpiece W is exposed to areas of high and low plasma density alternately while rotating, and the film is removed. This allows for uniform film removal.

The rotation speeds of the first and second disks 20 and 30 are determined according to the temperature of the workpiece W. Specifically, for example, an upper limit temperature of the workpiece W is set, and the rotation speeds are set in consideration of the temperature rise value of the workpiece W so that the temperature of the workpiece W does not reach the upper limit temperature.

(effect)
In the film removal apparatus 100, since an ICP is employed, high density plasma can be generated, and film removal processing can be performed with a single plasma source 1, so that the cost of the apparatus can be reduced.

In the film removal device 100, the magnetic field introduction window WR and stage S are positioned so that the perpendicular line VH is approximately aligned with the first tangent line H1 of the first disk 20, and thus plasma can be generated so that a plasma region PR1 with high plasma density spreads near the tangent line of the first disk 20. This expands the processing range of one plasma source 1, and allows many workpieces W to be processed. In addition, because the workpiece W can be positioned within the plasma region PR1 for a long period of time, the time required for the film removal process can be shortened, improving the efficiency of the film removal process.

In the film removal device 100, multiple second disks 30 are provided along the outer periphery of the first disk 20, and multiple holding members 40 are provided along the outer periphery of each second disk 30. This allows the number of workpieces W that can be loaded into the vacuum container 10 to be increased, and the number of workpieces W that can be processed at one time can be increased.

In the film removal device 100, the first disk 20 rotates in the vacuum vessel 10, so that the workpiece W is alternately positioned between the plasma region PR1 and the non-plasma generation region PR2. This allows the workpiece W to be intermittently exposed to plasma, preventing the workpiece W from becoming too hot.

In addition, if the distance between the plasma source 1 and the workpiece W is short, the workpiece W is likely to become hot. In contrast, in the film removal device 100, the magnetic field introduction window WR and stage S are arranged so that the perpendicular line VH approximately coincides with the tangent line of the first circular plate 20. As a result, the distance between the plasma source 1 and the workpiece W is greater than when the magnetic field introduction window WR and stage S are arranged so that the perpendicular line VH passes through the first center point P1 of the first circular plate 20, and film removal processing can be performed without drastically increasing or decreasing the temperature of the workpiece W.

As a result, the film removal device 100 can perform efficient film removal processing with a small number of plasma generation sources while preventing the workpiece W from becoming too hot.

[Embodiment 2]
Another embodiment of the present invention will be described below with reference to Fig. 8. Fig. 8 is a plan view of a film removal apparatus 100A according to a second embodiment of the present invention. For ease of explanation, the same reference numerals are used for members having the same functions as those described in the previous embodiment, and the explanations thereof will not be repeated. As shown in Fig. 8, the film removal apparatus 100A is different from the film removal apparatus 100 in the relative positional relationship between the magnetic field introduction window WR and the stage S, but the other configurations are the same.

In the film removal apparatus 100A, the magnetic field introduction window WR and the stage S are arranged so that, in a plan view in the z-axis direction, a perpendicular line VH that passes through the third center point P3 of the magnetic field introduction window WR and is perpendicular to the magnetic field introduction window WR is located in the perpendicular line arrangement region VR. Here, the perpendicular line arrangement region VR is the region from the first tangent line H1 to the second tangent line H2, which is a tangent to the orbital circle 32 of the second center point P2 that is parallel to the first tangent line H1 and is located on the first tangent line H1 side of the first center point P1. This allows the film removal apparatus 100A to achieve the same effect as the film removal apparatus 100.

〔summary〕
A film removal apparatus (100, 100A) according to a first aspect of the present invention includes a vacuum vessel (10) that accommodates a workpiece (work W) inside (11), an antenna (4) that is provided outside the vacuum vessel and generates a high-frequency magnetic field, a magnetic field introduction window (WR) provided in a wall surface (10a) of the vacuum vessel that introduces the high-frequency magnetic field into the vacuum vessel in order to generate plasma inside the vacuum vessel, and a stage (S) that is installed inside the vacuum vessel and that places a plurality of the workpieces thereon, the stage including a first circular plate (20) that rotates around a first center point (P1) that is the center, and a magnetic field introduction window (WR) provided in a wall surface (10a) of the vacuum vessel that introduces the high-frequency magnetic field into the vacuum vessel. The magnetic field introduction window has a plurality of second disks (30) arranged along the outer periphery of the first disk and rotating around a second center point (P2) which is the center of each second disk, and a plurality of holding members (40) arranged on the second disk and each holding the workpiece. In a planar view, a perpendicular line (VH) passing through the center (third center point P3) of the magnetic field introduction window (WR) and perpendicular to the magnetic field introduction window is located in a perpendicular line arrangement region (VR) from a first tangent (H1) tangent to the outer periphery of the first disk to a second tangent (H2) which is a tangent to an orbital circle (32) of the second center point that is parallel to the first tangent and is located on the first tangent side of the first center point.

According to the above configuration, a high-frequency magnetic field is introduced into the vacuum vessel through the magnetic field introduction window, so that plasma can be generated in the vacuum vessel. In addition, in a plan view, a perpendicular line passing through the center of the magnetic field introduction window and perpendicular to the magnetic field introduction window is located in the perpendicular line arrangement area, so that many objects to be treated can be included in the plasma area. This allows many objects to be treated with plasma treatment even with a single antenna. In addition, the rotation of the first disk creates a timing where the object to be treated is located in an area where the plasma does not hit, and the object to be treated is prevented from being continuously exposed to plasma, so that the temperature rise of the object to be treated can be suppressed. Furthermore, the rotation of the second disk makes the plasma density to which each object to be treated is exposed uniform. As a result, it is possible to realize a film removal device that prevents the object to be treated from becoming too hot, while suppressing the cost of the device and providing high treatment efficiency.

In the film removal device (100/100A) according to aspect 2 of the present invention, in the above aspect 1, the magnetic field introduction window (WR) may be composed of a metal plate (6) having a plurality of slits (61) and a dielectric plate (7) covering the slits and installed on the atmospheric side of the metal plate.

According to the above configuration, the magnetic field introduction window is composed of a metal plate and a dielectric plate, so that plasma can be generated in the vacuum vessel by the high-frequency magnetic field generated by the antenna. In addition, the strength of the magnetic field introduction window can be increased by the slits in the metal plate, so damage to the dielectric plate can be prevented.

The film removal device (100/100A) according to aspect 3 of the present invention may be the same as that according to aspect 2, except that the magnetic field introduction window (WR) is arranged so as to be substantially parallel to the antenna (4), and the slit (61) is formed in the metal plate (6) so that the longitudinal direction of the antenna and the longitudinal direction of the slit are perpendicular to each other.

With this configuration, the longitudinal direction of the slit is perpendicular to the longitudinal direction of the antenna, so that a plasma region with high plasma density can be generated in the vacuum vessel in a direction perpendicular to the longitudinal direction of the antenna.

In the film removal device (100/100A) according to aspect 4 of the present invention, in any one of aspects 1 to 3, the rotation speed of the first disk (20) and the second disk (30) may be determined according to the temperature of the workpiece (work W). With this configuration, film removal from the workpiece can be performed in an appropriate temperature range.

In the film removal device (100/100A) according to aspect 5 of the present invention, in any one of aspects 1 to 4, the holding member (40) may rotate on its axis. This configuration enables a more uniform film removal process.

The film removal device (100/100A) according to aspect 6 of the present invention may be any one of aspects 1 to 5, in which the length (L1) of the antenna (4) in the height direction of the workpiece (work W) may be longer than the height (L2) of the workpiece. With this configuration, the workpiece can be covered with plasma even in the height direction of the workpiece, so that the entire workpiece can be subjected to film removal processing.

The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope of the claims. The technical scope of the present invention also includes embodiments obtained by appropriately combining the technical means disclosed in different embodiments.

4 Antenna 5 Magnetic field introduction window component 6, 6A Metal plate 7 Dielectric plate 10 Vacuum vessel 20 First disk 30 Second disk 32 Orbital circle 40 Holding member 61 Slit 100, 100A Film removal device H1 First tangent H2 Second tangent VR Perpendicular arrangement area P1 First center point P2 Second center point P3 Third center point (center)
L1: Length of antenna in height direction of workpiece (processing object) L2: Height of workpiece (processing object) WR: Magnetic field introduction window

Claims (6)

a vacuum vessel for accommodating an object to be treated therein;
an antenna provided outside the vacuum vessel and configured to generate a high-frequency magnetic field;
a magnetic field introduction window provided on a wall surface of the vacuum vessel for introducing the high frequency magnetic field into the vacuum vessel in order to generate plasma inside the vacuum vessel;
a stage installed in the vacuum chamber and on which a plurality of the objects to be processed are placed;
The stage comprises:
A first disk that rotates around a first center point;
a plurality of second disks provided on the first disk along an outer periphery of the first disk, the second disks rotating around a second center point that is the center of each second disk;
a plurality of holding members provided on the second disk, each holding the workpiece;
A film removal device in which, in a planar view, a perpendicular line passing through the center of the magnetic field introduction window and perpendicular to the magnetic field introduction window is located in a perpendicular line arrangement region from a first tangent line tangent to the outer periphery of the first circular plate to a second tangent line tangent to the orbital circle of the second center point that is parallel to the first tangent line and is located on the first tangent side of the first center point. The film removal device according to claim 1, wherein the magnetic field introduction window is composed of a metal plate having multiple slits and a dielectric plate that covers the slits and is installed on the atmospheric side of the metal plate. The magnetic field introduction window is disposed so as to be substantially parallel to the antenna,
The film removal apparatus according to claim 2 , wherein the slit is formed in the metal plate such that a longitudinal direction of the antenna and a longitudinal direction of the slit are perpendicular to each other. The film removal device according to any one of claims 1 to 3, wherein the rotation speed of the first disc and the second disc is determined according to the temperature of the workpiece. The film removal device according to any one of claims 1 to 4, wherein the holding member rotates. The film removal device according to any one of claims 1 to 5, wherein the length of the antenna in the height direction of the workpiece is longer than the height of the workpiece.

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