JP7565683B2 - Method for manufacturing polishing pad and polished product - Google Patents

Description

The present invention relates to a method for manufacturing a polishing pad and a polished workpiece.

In the semiconductor manufacturing process, chemical mechanical polishing (CMP) is used for planarization after insulating film deposition and for forming metal wiring. One of the important technologies required for chemical mechanical polishing is polishing end point detection, which detects whether the polishing process is complete. For example, over-polishing or under-polishing relative to the target polishing end point directly leads to product defects. For this reason, in chemical mechanical polishing, the amount of polishing must be strictly controlled by polishing end point detection.

Chemical mechanical polishing is a complex process, and the polishing speed (polishing rate) changes depending on the operating conditions of the polishing equipment, the quality of consumables (slurry, polishing pads, dressers, etc.), and variations in conditions over time during the polishing process. Furthermore, in recent years, the precision of remaining film thickness and in-plane uniformity required in semiconductor manufacturing processes have become increasingly strict. For these reasons, it has become more difficult to detect the polishing end point with sufficient precision.

The main methods known for detecting the polishing end point are the optical end point detection method, the torque end point detection method, and the eddy current end point detection method.

In the optical end point detection method, light is irradiated onto the wafer through a transparent window member installed on the polishing pad, and the reflected light is monitored to detect the end point. However, slurry may leak from around the window member during polishing, which may reduce the detection accuracy. In addition, it is necessary to install a window member made of a different material and with different physical properties on the polishing pad, which can cause problems such as uneven polishing in the area where the window member is installed.

In addition, the torque end point detection method indirectly detects the end point of polishing from the torque of the rotating shaft that arises from differences in the friction coefficient between materials (see, for example, Patent Document 1).

Japanese Patent Application Publication No. 06-315850

The difference in polishing speed between the film to be polished and the stopper film (hereinafter referred to as the "selectivity ratio") depends on the slurry used, so the torque end point detection method has the problem that the end point cannot be detected accurately unless an appropriate slurry is selected. However, no technology has been proposed that solves this problem from the perspective of the polishing pad configuration.

The present invention was made in consideration of the above problems, and aims to provide a polishing pad that has a low slurry dependency of the selectivity ratio and can be used for highly accurate torque end point detection, and a method for manufacturing a polished product using the same.

As a result of extensive investigations into solving the above problems, the inventors have found that the above problems can be solved by adjusting the ratio of the kinetic friction coefficient _μO with respect to a silicon oxide film to the kinetic friction coefficient _μN with respect to a silicon nitride film, and have thus completed the present invention.

That is, the present invention is as follows.
[1]
a polishing layer having a polishing surface in which the ratio (μ _N /μ _O ) of the kinetic friction coefficient μ _N against a silicon nitride film to the kinetic friction coefficient μ _O against a silicon oxide film is 1.2 to 7.0;
Polishing pad.
[2]
The dynamic friction coefficient μ _O is 0.1 to 0.4.
The polishing pad according to [1].
[3]
The dynamic friction coefficient μ _N is 0.5 to 0.7.
The polishing pad according to [1] or [2].
[4]
A method for polishing a workpiece having a silicon oxide film and a silicon nitride film by using the polishing pad according to any one of [1] to [3], and an end point detection step of detecting an end point by a torque method during the polishing.
A method for manufacturing polished workpieces.

The present invention provides a polishing pad that has a low slurry dependency in selectivity and can be used for highly accurate torque detection type end point detection, as well as a method for manufacturing a polished product using the same.

1 is a schematic cross-sectional view of a polishing pad according to an embodiment of the present invention. FIG. 1 is a schematic diagram showing a film thickness control system installed in CMP. FIG. 1 is a schematic diagram showing the measurement principle of torque-based endpoint detection.

The following describes in detail an embodiment of the present invention (hereinafter referred to as the "present embodiment"); however, the present invention is not limited to this embodiment, and various modifications are possible without departing from the gist of the present invention.

[Polishing pad]
The polishing pad of this embodiment comprises a polishing layer having a polishing surface in which the ratio (μ _N /μ _O ) of the kinetic friction coefficient μ _N with respect to a silicon nitride film to the kinetic friction coefficient μ _O with respect to a silicon oxide film is 1.2 to 7.0.

As shown in Fig. 1, the polishing pad 10 of this embodiment includes a polishing layer 11 having a polishing surface with a predetermined ratio ( _μN / _{μO), and optionally includes a base layer 12. By adjusting the ratio (μN/μO ) ,} it becomes possible to detect with higher accuracy the difference in torque of the rotating shaft caused by the difference in friction coefficient between materials in the torque end point detection method, and as a result, the accuracy of the end point detection is improved. The detailed configuration will be described below.

[Polishing layer]
The polishing layer 11 has a polishing surface 11a having a predetermined ratio (μ _N /μ _O ). The ratio (μ _N /μ _O ) is 1.2 to 7.0, preferably 1.3 to 5.0, and more preferably 1.5 to 3.0. By having the ratio (μ _N /μ _O ) within the above range, the accuracy of endpoint detection by the torque method is further improved.

The dynamic friction coefficient μ _O is preferably 0.1 to 0.4, more preferably 0.15 to 0.35, and even more preferably 0.2 to 0.3. When the dynamic friction coefficient μ _O is within the above range, the accuracy of the end point detection by the torque method tends to be further improved. When the dynamic friction coefficient μ _O is 0.1 or more, the resistance with the silicon oxide film increases, and the interaction between the polishing pad and the silicon oxide film increases, so the polishing rate tends to be further improved. When the dynamic friction coefficient μ _O is 0.4 or less, the resistance difference between the silicon oxide film and the silicon nitride film increases, and the accuracy of the end point detection by the torque method tends to be further improved.

Furthermore, the dynamic friction coefficient μ _N is preferably 0.3 to 0.9, more preferably 0.4 to 0.8, and even more preferably 0.5 to 0.7. When the dynamic friction coefficient μ _N is within the above range, the accuracy of the end point detection by the torque method tends to be further improved. In particular, when the dynamic friction coefficient μ _N is 0.3 or more, the resistance difference between the silicon oxide film and the silicon nitride film becomes large, and the accuracy of the end point detection by the torque method tends to be further improved. Furthermore, when the dynamic friction coefficient μ _N is 0.9 or less, the resistance between the polishing pad and the silicon nitride film during polishing becomes small, and the occurrence of so-called dechucking errors tends to be further suppressed.

The dynamic friction coefficients μ _O and μ _N can be measured by a reciprocating sliding friction tester. The dynamic friction coefficients μ _O and μ _N can be adjusted by the composition of the polishing layer. For example, a method for adjusting the dynamic friction coefficients μ _O and μ _N can be considered to add a compound that interacts with a silicon oxide film or a silicon nitride film to the polishing layer. Examples of such compounds include water-soluble organic compounds having a carboxylic acid group and/or a sulfonic acid group (hereinafter, also simply referred to as "water-soluble organic compounds") described below. The water-soluble organic compounds are used to adjust the friction coefficient with respect to oxide films such as silicon oxide films and nitride films such as silicon nitride films. By using a water-soluble organic compound, the friction adjustment function of the organic compound in the presence of a slurry is exerted, and in the torque end point detection method, it becomes possible to detect the difference in torque of a rotating shaft caused by the difference in friction coefficient between materials with higher accuracy.

The composition of the polishing layer is not particularly limited as long as the ratio (μ _N /μ _O ) is 1.2 to 7.0, and examples thereof include foamed resin molded bodies, non-foamed resin molded bodies, resin-impregnated substrates, etc. In these compositions, a water-soluble organic compound that interacts with a silicon oxide film or a silicon nitride film can be mixed with the resin or used as a component of all or part of the resin.

Here, a resin foamed molded body refers to a foamed body that does not have a fiber base material and is composed of a specific resin. There are no particular limitations on the foam shape, but examples include spherical bubbles, nearly spherical bubbles, teardrop-shaped bubbles, and open bubbles in which each bubble is partially connected.

In addition, the term "non-foamed resin molded body" refers to a non-foamed body that does not have a fiber substrate and is composed of a specific resin. The term "non-foamed body" refers to a body that does not have bubbles as described above. In this embodiment, the term "non-foamed resin molded body" also includes a body in which a curable composition is attached to a substrate such as a film and cured. More specifically, the term "non-foamed resin molded body" also includes a cured resin product formed by a labia coater method, small diameter gravure coater method, reverse roll coater method, transfer roll coater method, kiss coater method, die coater method, screen printing method, spray coating method, etc.

Furthermore, a resin-impregnated substrate is one obtained by impregnating a fiber substrate with a resin. Here, the fiber substrate is not particularly limited, but examples thereof include woven fabric, nonwoven fabric, knitted fabric, etc.

(Water-soluble organic compound)
The water-soluble organic compound that interacts with the silicon oxide film or silicon nitride film is not particularly limited, but examples thereof include water-soluble organic compounds having a carboxylic acid group and/or a sulfonic acid group.

Water-soluble organic compounds having a carboxylic acid group are not particularly limited, but examples include poly(meth)acrylic acid, malic acid, lactic acid, tartaric acid, gluconic acid, adipic acid, and salts thereof.

Water-soluble organic compounds having sulfonic acid groups are not particularly limited, but examples include naphthalenesulfonic acid-formaldehyde condensates, laurylbenzenesulfonic acid, and salts thereof.

Among these, poly(meth)acrylic acid, naphthalenesulfonic acid-formaldehyde condensate, and salts thereof are more preferred, and ammonium polyacrylate and naphthalenesulfonic acid-formaldehyde condensate are even more preferred. By using such water-soluble organic compounds, the detection accuracy in the torque end point detection method tends to be further improved. The water-soluble organic compounds may be used alone or in combination of two or more kinds.

The molecular weight of the water-soluble organic compound is preferably 90 to 15,000, more preferably 500 to 10,000, and even more preferably 500 to 2,000. Having a molecular weight within the above range tends to improve the detection accuracy in the torque end point detection method. In addition, when the water-soluble organic compound is a polymer, the "molecular weight of the water-soluble organic compound" refers to the number average molecular weight of the polymer.

The content of the water-soluble organic compound is preferably 0.01 to 10% by weight, more preferably 0.05 to 5% by weight, and even more preferably 0.1 to 3% by weight, based on the total weight of the polishing layer. When the content of the water-soluble organic compound is within the above range, the accuracy of end point detection in the torque end point detection method tends to be improved. Note that the "content of the water-soluble organic compound" refers to the total content when multiple water-soluble organic compounds are used.

(resin)
The resin constituting the polishing layer may be a wet-solidifiable resin, a dry-solidifiable resin, or other curable resin, etc. These resins may be used alone or in combination of two or more kinds.

Here, "wet coagulation" refers to a method in which a fiber substrate is impregnated with a resin solution in which resin has been dissolved, and the fiber substrate is immersed in a bath of a coagulation liquid (such as water, which is a poor solvent for the resin), thereby coagulating and regenerating the resin in the impregnated resin solution. Alternatively, a resin solution in which resin has been dissolved may be applied to a film or the like, and the film may be immersed in a bath of the coagulation liquid to obtain a resin molded body that does not contain a fiber substrate. In this wet coagulation, the solvent in the resin solution is replaced with the coagulation liquid, causing the resin in the resin solution to coagulate and coagulate. Note that air bubbles are formed in areas other than where the resin has coagulated and coagulated. There are no particular restrictions on the shape of the air bubbles that are formed, but they tend to be teardrop-shaped.

"Dry coagulation" refers to a method in which a liquid containing a prepolymer and a hardener is impregnated into a fiber substrate, and the prepolymer and hardener are reacted to form a resin. Alternatively, a liquid containing a prepolymer and a hardener may be applied to a film or the like, and the prepolymer and hardener are reacted to obtain a molded resin body that does not contain a fiber substrate. In this wet coagulation, a foam is obtained when gas is generated by the reaction between the prepolymer and the hardener or when a foaming agent is used, and a non-foamed body is obtained in other cases. The shape of the foam is not particularly limited, but it tends to be spherical or approximately spherical.

Specific examples of each resin are given below, but the resins that make up the polishing layer of this embodiment are not limited to the following.

Resins that can be wet-solidified include, but are not limited to, polyurethane-based resins such as polyurethane and polyurethane polyurea; acrylic-based resins such as polyacrylate and polyacrylonitrile; vinyl-based resins such as polyvinyl chloride, polyvinyl acetate and polyvinylidene fluoride; polysulfone-based resins such as polysulfone and polyethersulfone; acylated cellulose-based resins such as acetylated cellulose and butyrylated cellulose; polyamide-based resins; and polystyrene-based resins.

Among these, it is preferable to include a polyurethane-based resin. Examples of polyurethane-based resins include, but are not limited to, polyester-based polyurethane resins, polyether-based polyurethane resins, and polycarbonate-based polyurethane resins. By using such resins, the polishing rate tends to be further improved.

Prepolymers constituting the dry-solidifiable resin are not particularly limited, but examples include an adduct of hexamethylene diisocyanate and polyoxytetramethylene glycol; an adduct of 2,4-tolylene diisocyanate and prenzcatechol; an adduct of tolylene diisocyanate and hexanetriol; an adduct of tolylene diisocyanate and trimethylolpropane; an adduct of xylylene diisocyanate and trimethylolpropane; an adduct of hexamethylene diisocyanate and trimethylolpropane; and an adduct of isocyanuric acid and hexamethylene diisocyanate. One type of prepolymer may be used alone, or two or more types may be used in combination.

The curing agent constituting the dry-solidifying resin is not particularly limited, but examples thereof include amine compounds such as 3,3'-dichloro-4,4'-diaminodiphenylmethane, 4-methyl-2,6-bis(methylthio)-1,3-benzenediamine, 2-methyl-4,6-bis(methylthio)-1,3-benzenediamine, 2,2-bis(3-amino-4-hydroxyphenyl)propane, 2,2-bis[3-(isopropylamino)-4-hydroxyphenyl]propane, 2,2-bis[3-(1-methylpropylamino)-4-hydroxyphenyl]propane, 2,2-bis[3-(1-methylpentylamino)-4-hydroxyphenyl]propane, 2,2-bis(3,5-diamino-4-hydroxyphenyl)propane, 2,6-diamino-4-methylphenol, trimethylethylenebis-4-aminobenzoate, and polytetramethylene oxide-di-p-aminobenzoate; ethylene glycol, propylene ... Examples of polyhydric alcohol compounds include ethylene glycol, diethylene glycol, trimethylene glycol, tetraethylene glycol, triethylene glycol, dipropylene glycol, 1,4-butanediol, 1,3-butanediol, 2,3-butanediol, 1,2-butanediol, 3-methyl-1,2-butanediol, 1,2-pentanediol, 1,4-pentanediol, 2,4-pentanediol, 2,3-dimethyltrimethylene glycol, tetramethylene glycol, 3-methyl-4,3-pentanediol, 3-methyl-4,5-pentanediol, 2,2,4-trimethyl-1,3-pentanediol, 1,6-hexanediol, 1,5-hexanediol, 1,4-hexanediol, 2,5-hexanediol, 1,4-cyclohexanedimethanol, neopentyl glycol, glycerin, trimethylolpropane, trimethylolethane, and trimethylolmethane. The curing agent may be used alone or in combination with two or more types.

The composition constituting the other curable resin is not particularly limited, but may be, for example, a photocurable composition containing a photopolymerization initiator and a polymerizable compound, a thermosetting composition containing a thermal polymerization initiator and a polymerizable compound, a thermosetting resin, a UV-curable resin, or a two-liquid mixed curable resin. In addition, the curable composition may contain a crosslinking agent having two or more polymerizable functional groups, if necessary.

The above polymerizable compound is not particularly limited, but examples thereof include (meth)acrylate, epoxy (meth)acrylate, urethane (meth)acrylate, and polyester (meth)acrylate.

The photopolymerization initiator is not particularly limited, but examples thereof include benzophenone-based compounds, acetophenone-based compounds, and thioxanthones. In addition, the thermal polymerization initiator is not particularly limited, but examples thereof include azo compounds such as 2,2'-azobisbutyronitrile, and peroxides such as benzoyl peroxide (BPO).

The above-mentioned thermosetting resins are not particularly limited, but examples thereof include phenolic resins, epoxy resins, acrylic resins, urea resins, and formaldehyde resins.

The above-mentioned UV-curable resin is not particularly limited, but examples thereof include prepolymers with a number average molecular weight of about 1,000 to 10,000, acrylic (methacrylic) esters and their urethane modifications, thiokol-based compounds, etc., and reactive diluents and organic solvents can be used as appropriate depending on the application.

The two-liquid mixed curable resin is not particularly limited, but for example, prepolymers with different physical properties can be used.

[Base layer]
The polishing pad of this embodiment has a base layer on the opposite side of the polishing surface of the polishing layer. By having the base layer, the conformability to the workpiece to be polished is improved, and the uniformity of the polishing pressure on the workpiece tends to be improved.

The substrate layer is not particularly limited, but examples thereof include impregnated nonwoven fabrics and resin foams impregnated with resin. Examples of impregnated nonwoven fabrics include polyolefin-based, polyamide-based, polyester-based, and other nonwoven fabrics impregnated with polyurethane-based materials such as polyurethane and polyurethane polyurea, acrylic-based materials such as polyacrylate and polyacrylonitrile, vinyl-based materials such as polyvinyl chloride, polyvinyl acetate, and polyvinylidene fluoride, polysulfone-based materials such as polysulfone and polyethersulfone, acylated cellulose-based materials such as acetylated cellulose and butyrylated cellulose, polyamide-based, and polystyrene-based resins. Examples of resin foams include polyolefin-based foams, polyurethane-based foams, polystyrene-based foams, phenol-based foams, synthetic rubber-based foams, and silicone rubber-based foams.

[Method of manufacturing polishing pad]
The polishing pad of this embodiment can be manufactured by known methods such as a method of bonding a polishing layer and a base layer together, or a method of forming a polishing layer on a base layer.

The method for forming the polishing layer is not particularly limited, but examples thereof include the above-mentioned wet solidification method, the above-mentioned dry solidification method, and a method for hardening a curable resin. In this embodiment, a method for making the polishing layer contain a compound that interacts with a silicon oxide film or a silicon nitride film includes a method in which the compound is mixed with a resin before hardening and hardened in that state.

The method for forming the base layer is not particularly limited, but examples include methods for forming the above foams using known methods.

[Method for manufacturing polished product]
The method for producing a polished product of this embodiment includes a polishing step of polishing a workpiece using the above-mentioned polishing pad to obtain a polished product, and an end point detection step of detecting the end point during the polishing using a torque method.

[Polishing process]
The polishing process may be a primary lapping process (rough lapping), a secondary lapping process (finish lapping), a primary polishing process (rough polishing), a secondary polishing process (finish polishing), or a process that combines these processes. Note that, here, "lapping" refers to polishing at a relatively high rate using coarse abrasive grains, and "polishing" refers to polishing at a relatively low rate using fine abrasive grains to improve the surface quality.

Among these, the polishing pad of this embodiment is preferably used for chemical mechanical polishing. On the other hand, it can also be used to hold a workpiece in a machining process such as grinding or cutting. Below, the manufacturing method of the polishing product of this embodiment will be explained using chemical mechanical polishing as an example, but the manufacturing method of the polishing product of this embodiment is not limited to the following.

The object to be polished is not particularly limited, but examples include materials for semiconductor devices and electronic components, particularly thin substrates (objects to be polished) such as Si substrates (silicon wafers), SiC (silicon carbide) substrates, GaAs (gallium arsenide) substrates, glass, hard disks, and LCD (liquid crystal display) substrates.

The polishing method may be a conventionally known method, and is not particularly limited. For example, first, the object to be polished held on a holding platen arranged opposite the polishing pad is pressed against the polishing surface, and the polishing pad and/or holding platen are rotated while supplying slurry from the outside. The polishing pad and holding platen may rotate in the same direction at different rotation speeds, or in different directions. In addition, the object to be polished may be polished while moving (rotating) inside the frame during the polishing process.

The slurry may contain water, chemical components such as an oxidizing agent represented by _hydrogen peroxide, additives, abrasive grains (abrasive particles; e.g., SiC, _SiO2 , _Al2O3 , _CeO2 ), etc. depending on the object to be polished and the polishing conditions.

[End point detection process]
The method for manufacturing a polished workpiece according to the present embodiment includes an end point detection step in which the end point is detected by a torque method in the polishing step. As the end point detection method by the torque method, a conventionally known method can be specifically used. FIG. 2 shows a schematic diagram of the end point detection method by the torque method. This schematic diagram shows a chemical mechanical polishing process in which a target film on the surface of the wafer W is polished and flattened by pressing a wafer W held by a top ring 21 onto a polishing pad 10 attached on a table 22 while flowing a slurry (not shown). The polishing device 20 is equipped with a film thickness detection sensor 23 of a torque detection method around the top ring 22 in order to perform an end check and end the process with high accuracy. The wafer W has a polishing target film W1 and a stopper film W2 arranged on the underside of the polishing target film.

Examples of the polishing target film W1 and the stopper film W2 include a silicon oxide film and a silicon nitride film.

In the torque method, the change in the friction coefficient between the wafer W and the polishing pad 10 is detected as a change in the torque of the rotation shaft of the top ring 21 or the table 22. The torque change can be detected, for example, by measuring the drive motor current of the rotation shaft of the top ring 21 or the table 22. More specifically, as shown in FIG. 3, when the film W1 to be polished is removed (STEP 1), the stopper film W2 underneath is exposed and the torque change is detected (STEP 2). In the torque method, the end point is detected by detecting this torque change. Note that in the torque method, the torque change is easily dependent on the selection of the slurry, so it is preferable to select the slurry in advance from the viewpoint of accurate end point detection.

The present invention will be described in more detail below using examples and comparative examples. The present invention is not limited in any way by the following examples.

Example 1
A prepolymer containing an adduct of 2,4-tolylene diisocyanate and polyoxytetramethylene glycol was added with ammonium polyacrylate (number average molecular weight 1000) as an interacting compound in an amount of 0.5% by weight relative to the total amount of resin, to which 3,3'-dichloro-4,4'-diaminodiphenylmethane was added as a curing agent, and the mixture was cured to form a polishing layer. The base layer was obtained by impregnating a nonwoven fabric made of polyethylene fibers with a polyurethane resin solution, followed by wet coagulation and drying. The base layer was attached to the polishing layer with a double-sided tape having a hot-melt adhesive layer, to obtain the polishing pad of Example 1.

(Examples 2 to 6)
Polishing pads of Examples 2 to 6 were obtained by the same manufacturing method as in Example 1, except that the type and amount of the interacting compound were changed as shown in Table 1.

(Comparative Example 1)
A polishing pad of Comparative Example 1 was obtained by the same manufacturing method as in Example 1, except that ammonium polyacrylate (number average molecular weight 1000), which is an interactive compound, was not used.

(Comparative Example 2)
A conventional polishing pad IC1000 (manufactured by Nitta Haas Corporation) was used.

(Measurement of dynamic friction coefficient)
The surface of each polishing pad of the examples and comparative examples was roughened for 30 minutes using a dresser equipped with a diamond grindstone of #160. After the surface roughening, a sample was cut into a rectangular shape of 20 mm x 10 mm, and a reciprocating sliding friction tester (HEIDON-14D) was used to measure the resistance force by reciprocating a slider pressed against the sample with a constant load of 5 g. The slider was made of silicon oxide and silicon nitride with a side length of 5 mm, and moved at a speed of 1 mm/sec in a range of 12 mm. The measurement was performed by reciprocating 10 times for each sample and each load, and the dynamic friction coefficients μ _O and μ _N were obtained using the average of the loads of the 10th time.

In all of Examples 1 to 6, the additive ammonium polyacrylate or naphthalenesulfonic acid-formaldehyde condensate specifically adsorbed to the silicon nitride film, thereby increasing the frictional resistance of the silicon nitride film and decreasing the frictional resistance against the silicon oxide film. As a result, the ratio μ _N /μ _O of the kinetic friction coefficient μ _O against the silicon oxide film to the kinetic friction coefficient μ _N against the silicon nitride film was 1.2 or more, and the torque-type endpoint detection could be performed with high accuracy.

The polishing pad of the present invention is used for polishing optical materials, semiconductor devices, glass substrates for hard disks, etc., and has industrial applicability as a pad that is particularly suitable for polishing devices in which an oxide layer, metal layer, etc. is formed on a semiconductor wafer.

10: Polishing pad, 11: Polishing layer, 11a: Polishing surface, 12: Base layer, 20: Polishing device, 21: Top ring, 22: Table, 23: Film thickness detection sensor, W: Wafer, W1: Film to be polished, W2: Stopper film

Claims (4)

a polishing layer having a polishing surface in which the ratio (μ _N /μ _O ) of the kinetic friction coefficient μ _N with respect to a silicon nitride film to the kinetic friction coefficient μ _O with respect to a silicon oxide film is 1.2 to 7.0 ;
The polishing layer contains a water-soluble organic compound.
Abrasive pad for torque type endpoint detection. The dynamic friction coefficient μ _O is 0.1 to 0.4.
The polishing pad of claim 1. The dynamic friction coefficient μ _N is 0.5 to 0.7.
The polishing pad according to claim 1 or 2. A method for polishing a workpiece having a silicon oxide film and a silicon nitride film by using the polishing pad according to any one of claims 1 to 3, comprising: a polishing step; and an end point detection step of detecting an end point by a torque method during the polishing.
A method for manufacturing polished workpieces.