JP7427189B2 - Laser processing method, semiconductor member manufacturing method, and laser processing device - Google Patents

Description

The present invention relates to a laser processing method, a semiconductor member manufacturing method, and a laser processing apparatus.

By irradiating a semiconductor object such as a semiconductor ingot with a laser beam, a modified region is formed inside the semiconductor object, and a crack extending from the modified region is developed to separate the semiconductor object from the semiconductor object such as a semiconductor wafer. Processing methods for cutting out members are known (for example, see Patent Documents 1 and 2).

Japanese Patent Application Publication No. 2017-183600 Japanese Patent Application Publication No. 2017-057103

In the above-described processing method, a semiconductor member having the same shape as the semiconductor object is cut out when viewed from a direction intersecting the laser light incident surface of the semiconductor object. On the other hand, in the future, for example, when cutting out semiconductor chips from a semiconductor wafer, it may be required to cut out semiconductor members in units smaller than the original semiconductor object (that is, in a shape different from the semiconductor object).

An object of the present invention is to provide a laser processing method, a semiconductor member manufacturing method, and a laser processing apparatus that can obtain a semiconductor member having a shape different from that of a semiconductor object from a semiconductor object.

A laser processing method according to the present invention includes cutting a semiconductor object along a virtual plane facing a first surface of the semiconductor object inside the semiconductor object and a line extending along the first surface. A laser processing method in which a first laser beam is incident on a semiconductor object from a first surface, and the condensing point of the first laser beam is moved within the imaginary plane so that the semiconductor object is lined up in a plane in a virtual plane. A first step of forming a plurality of modification spots; and after the first step, irradiating the semiconductor object with a second laser beam along the line to form a line as seen from the first direction intersecting the first surface. a second step of forming a modified region extending linearly along the first surface; form.

In this method, in the first step, the first laser beam is made incident on the semiconductor object from the first surface of the semiconductor object, and the convergence point of the first laser beam is set at a virtual point opposite to the first surface of the semiconductor object. It is moved within the plane to form a plurality of modified spots lined up in a planar manner within the virtual plane. It is therefore possible to cut the semiconductor object bounded by a crack extending from this modification spot and spanning the virtual plane. In particular, in this method, after the first step, in the second step, the second laser beam is irradiated along the line along the first surface of the semiconductor object, thereby linearly modifying the semiconductor object along the line. form a quality area. This modified region is formed over a virtual plane from the surface of the semiconductor object. Therefore, after the second step, in addition to cutting with the crack across the virtual plane as the boundary, it is possible to cut with the modified region as the boundary. Therefore, according to this method, it is possible to obtain a semiconductor member having a different shape (smaller unit) from the original semiconductor object.

In the laser processing method according to the present invention, in the first step, a peripheral region including the peripheral edge of the semiconductor object when viewed from the first direction and in which no modification spot is formed may be formed. In this case, the peripheral region can prevent cracks extending from the modification spot from reaching the outer edge of the semiconductor object.

In the laser processing method according to the present invention, in the first step, the focal point of the first laser beam is moved from the outside of the semiconductor object to the inside of the semiconductor object through the periphery as seen from the first direction. The peripheral region may be formed by In this way, by moving the condensing point of the first laser beam from the outside of the semiconductor object to the inside through the periphery, a modified spot is formed by taking advantage of the deterioration of the convergence state at the periphery. It is possible to easily form peripheral areas that are not covered.

In the laser processing method according to the present invention, the material of the semiconductor object may include gallium. In this case, when gallium is precipitated in a plurality of cracks extending from a plurality of modification spots by laser beam irradiation, the laser beam is easily absorbed by the gallium. Therefore, it is possible to form a crack across the virtual surface with a smaller output power.

In the laser processing method according to the present invention, the material of the semiconductor object may include gallium nitride. In this case, when gallium nitride is decomposed by laser light irradiation, nitrogen gas is generated within the crack. Therefore, using the pressure (internal pressure) of the nitrogen gas, it is possible to easily form a crack across the virtual surface.

A semiconductor member manufacturing method according to the present invention includes a first step and a second step included in the above-described laser processing method, and after the second step, a crack extending from a modified spot and spanning a virtual surface, and a modified region. and a third step of obtaining a semiconductor member from the semiconductor object using the boundary as the boundary. This manufacturing method implements the first and second steps of the laser processing method described above. Therefore, for the same reason, it is possible to obtain a semiconductor component in a different shape (smaller unit) than the original semiconductor object.

In the semiconductor member manufacturing method according to the present invention, the semiconductor object may be a semiconductor ingot, and the semiconductor member may be a semiconductor wafer. In this case, it is possible to obtain a semiconductor wafer having a shape different from that of the semiconductor ingot.

In the semiconductor manufacturing method according to the present invention, the semiconductor object may be a semiconductor wafer, and the semiconductor member may be a semiconductor chip. In this case, it is possible to obtain a semiconductor chip having a shape different from that of the semiconductor wafer.

A laser processing apparatus according to the present invention is configured to cut a semiconductor object along a virtual plane facing a first surface of the semiconductor object inside the semiconductor object and a line extending along the first surface. The laser processing apparatus includes a stage that supports a semiconductor object, a laser irradiation unit that irradiates the semiconductor object supported by the stage with laser light, and a control section that controls the stage and the laser irradiation unit. The control unit causes the first laser beam to enter the semiconductor object from the first surface, and moves the condensing point of the first laser beam within the virtual plane so that the semiconductor objects are arranged in a plane in the virtual plane. A first process for forming a plurality of modification spots, and a second laser beam irradiated onto the semiconductor object along the line after the first process, thereby forming a line in the line as viewed from the first direction intersecting the first surface. a second process of forming a modified region extending linearly along the first surface, and in the second process, the modification is performed from the first surface to a virtual plane when viewed from a second direction along the first surface. Form a region.

In this apparatus, in the first process, the first laser beam is made incident on the semiconductor object from the first surface of the semiconductor object, and the convergence point of the first laser beam is set at a virtual point opposite to the first surface of the semiconductor object. It is moved within the plane to form a plurality of modified spots lined up in a planar manner within the virtual plane. It is therefore possible to cut the semiconductor object bounded by a crack extending from this modification spot and spanning the virtual plane. In particular, in this apparatus, after the first process, in the second process, the semiconductor object is linearly modified along the first surface by irradiating the second laser beam along the line. form a quality area. This modified region is formed over a virtual plane from the first surface of the semiconductor object. Therefore, after the second treatment, in addition to cutting with the crack across the virtual plane as the boundary, it is possible to cut with the modified region as the boundary. Therefore, according to this apparatus, it is possible to obtain a semiconductor member in a shape (smaller unit) different from that of the original semiconductor object.

According to the present invention, it is possible to provide a laser processing method, a semiconductor member manufacturing method, and a laser processing apparatus that can obtain a semiconductor member having a shape different from that of a semiconductor object from a semiconductor object.

FIG. 1 is a schematic diagram showing a laser processing apparatus according to an embodiment. 2 is a plan view showing a GaN wafer as the object shown in FIG. 1. FIG. 3 is a cross-sectional view of the GaN wafer shown in FIG. 2. FIG. It is a figure showing the main steps of a laser processing method and a semiconductor member manufacturing method. It is a figure showing the main steps of a laser processing method and a semiconductor member manufacturing method. It is a figure showing the main steps of a laser processing method and a semiconductor member manufacturing method. It is a figure showing the main steps of a laser processing method and a semiconductor member manufacturing method. It is a figure showing the main steps of a laser processing method and a semiconductor member manufacturing method. It is a figure showing the main steps of a laser processing method and a semiconductor member manufacturing method. It is a figure showing the main steps of a laser processing method and a semiconductor member manufacturing method. It is a figure showing the main steps of a laser processing method and a semiconductor member manufacturing method. It is a figure showing the main steps of a laser processing method and a semiconductor member manufacturing method. It is a figure showing the main steps of a laser processing method and a semiconductor member manufacturing method. It is a figure showing the main steps of a laser processing method and a semiconductor member manufacturing method. FIG. 2 is a plan view (photograph) of a GaN wafer showing a state in which a crack is formed across a virtual plane. It is a figure showing the main steps of a laser processing method and a semiconductor member manufacturing method. It is an image of the peeled surface of the GaN wafer formed by the laser processing method and semiconductor member manufacturing method of an example. 18 is a height profile of the peeled surface shown in FIG. 17. It is an image of the peeled surface of the GaN wafer formed by the laser processing method and semiconductor member manufacturing method of another example. 20 is a height profile of the peeled surface shown in FIG. 19. FIG. 3 is a schematic diagram for explaining the principle of forming a peeled surface by an example of a laser processing method and a semiconductor member manufacturing method. FIG. 6 is a schematic diagram for explaining the principle of forming a peeled surface by another example of a laser processing method and a semiconductor member manufacturing method. It is an image of a crack formed in the middle of an example laser processing method and semiconductor member manufacturing method. It is an image of the crack formed in the middle of the laser processing method and semiconductor member manufacturing method of another example. It is an image of the modification spot and the crack formed by the laser processing method and semiconductor member manufacturing method of a comparative example. It is an image of the modification spot and the crack formed by the laser processing method and semiconductor member manufacturing method of 1st Example. It is an image of the modification spot and the crack formed by the laser processing method and semiconductor member manufacturing method of 2nd Example and 3rd Example.

Hereinafter, one embodiment will be described in detail with reference to the drawings. In addition, in the description of each figure, the same or corresponding elements may be given the same reference numerals, and redundant description may be omitted. Further, each figure may show an orthogonal coordinate system defined by an X axis, a Y axis, and a Z axis.
[Laser processing equipment configuration]

As shown in FIG. 1, the laser processing apparatus 1 includes a stage 2, a light source 3, a spatial light modulator 4, a condenser lens 5, and a control section 6. The laser processing apparatus 1 is an apparatus that forms a modified region 12 on the object 11 by irradiating the object 11 with a laser beam L. Hereinafter, the first horizontal direction will be referred to as the X-axis direction, and the second horizontal direction perpendicular to the first horizontal direction will be referred to as the Y-axis direction. Further, the vertical direction is referred to as the Z-axis direction.

The stage 2 supports the object 11 by adsorbing a film attached to the object 11, for example. In this embodiment, the stage 2 is movable along each of the X-axis direction and the Y-axis direction. Furthermore, the stage 2 is rotatable about an axis parallel to the Z-axis direction.

The light source 3 outputs a laser beam L that is transparent to the object 11 using, for example, a pulse oscillation method. The spatial light modulator 4 modulates the laser beam L output from the light source 3. The spatial light modulator 4 is, for example, a reflective liquid crystal (LCOS) spatial light modulator (SLM). The condensing lens 5 condenses the laser beam L modulated by the spatial light modulator 4. In this embodiment, the spatial light modulator 4 and the condensing lens 5 are movable along the Z-axis direction as a laser irradiation unit.

When the laser beam L is focused inside the object 11 supported by the stage 2, the laser beam L is particularly absorbed in a portion corresponding to the convergence point C of the laser beam L, and is reformed inside the object 11. A quality region 12 is formed. The modified region 12 is a region that differs in density, refractive index, mechanical strength, and other physical properties from the surrounding unmodified region. Examples of the modified region 12 include a melt-treated region, a crack region, a dielectric breakdown region, and a refractive index change region.

As an example, when the stage 2 is moved along the X-axis direction and the focal point C is moved relative to the object 11 along the X-axis direction, a plurality of modified spots 13 are moved along the X-axis direction. They are formed in a line along the same line. One modification spot 13 is formed by irradiation with one pulse of laser light L. One row of modified regions 12 is a collection of a plurality of modified spots 13 arranged in one row. Adjacent modification spots 13 may be connected to each other or separated from each other depending on the relative moving speed of the focal point C with respect to the object 11 and the repetition frequency of the laser beam L.

The control unit 6 controls the stage 2, the light source 3, the spatial light modulator 4, and the condenser lens 5 (ie, the laser irradiation unit). The control unit 6 is configured as a computer device including a processor, memory, storage, communication device, and the like. In the control unit 6, the software (program) read into the memory or the like is executed by the processor, and the processor controls reading and writing of data in the memory and storage, and communication by the communication device. Thereby, the control unit 6 realizes various functions.
[One embodiment of laser processing method and semiconductor member manufacturing method]

As shown in FIGS. 2 and 3, the target object 11 of the laser processing method and semiconductor member manufacturing method according to the present embodiment is a GaN wafer (semiconductor wafer, semiconductor object) 20. The size of the GaN wafer 20 is, for example, about 50 mm x 50 mm (for example, if the GaN wafer 20 is disk-shaped, it is about 2 inches).

GaN wafer 20 has a first surface 20a and a second surface 20b opposite to the first surface 20a. Here, the first surface 20a and the second surface 20b are parallel to each other. Further, a virtual plane 15 and lines A1 and A2 are set on the GaN wafer 20. Virtual surface 15 is a surface inside GaN wafer 20 that faces first surface 20a and second surface 20b of GaN wafer 20. Here, the virtual surface 15 is a surface parallel to the first surface 20a, and has a rectangular shape, for example. Line A1 is a virtual line along the first surface 20a. Line A2 is a line that runs along the first surface 20a and intersects (perpendicularly intersects) line A1.

Further, a portion corresponding to a peripheral region 16 described later is set on the GaN wafer 20 so as to surround the virtual plane 15 when viewed from a first direction (here, the Z-axis direction) intersecting (orthogonal to) the first surface 20a. ing. That is, the virtual plane 15 does not reach the outer edge of the GaN wafer 20 when viewed from the Z-axis direction. The peripheral area 16 has, for example, a rectangular annular shape when viewed from the Z-axis direction. The width of the peripheral region 16 (here, the distance between the outer edge of the virtual plane 15 and the outer edge of the GaN wafer 20 when viewed from the Z-axis direction) is, for example, 30 μm or more.

The laser processing method and the semiconductor member manufacturing method according to the present embodiment cut the GaN wafer 20 along the virtual plane 15 and the lines A1 and A2 to produce a plurality of chips (semiconductor chips, semiconductor chips, etc.) from the GaN wafer 20. This is carried out to cut out the member) 30A and the chip 30B. The portion of the GaN wafer 20 corresponding to the chip 30A has the virtual plane 15 as its boundary when viewed from the second direction (here, the X-axis direction or the Y-axis direction) along the first surface 20a, and when viewed from the Z-axis direction. This is a portion bordered by lines A1 and A2.

The portion corresponding to the chip 30B is a portion of the GaN wafer 20 that has the virtual plane 15 as a boundary when viewed from the X-axis direction or the Y-axis direction and extends beyond lines A1 and A2 when viewed from the Z-axis direction, It includes portions corresponding to a plurality of (here, four) chips 30A. Here, a portion that becomes four chips 30A and a portion that becomes one chip 30B are set for one GaN wafer 20. The size of the chip 30A is, for example, about 25 mm x 25 mm.

In this laser processing method and semiconductor member manufacturing method, first, as shown in FIGS. 4 to 11, a first laser beam L1 having a wavelength of, for example, 532 nm is irradiated onto the GaN wafer 20 along the virtual plane 15, Forming a plurality of modified spots (first step).

This first step will be explained in detail. In addition, below, the arrow has shown the locus of the condensing point C1 of the 1st laser beam L1. Further, modified spots 13a, 13b, 13c, and 13d, which will be described later, may be collectively referred to as modified spots 13, and cracks 14a, 14b, 14c, and 14d, which will be described later, may be collectively referred to as cracks 14.

In this first step, first, a GaN wafer 20 as the object 11 is placed on the stage 2. At this time, as an example, the first surface 20a is made to face the laser irradiation unit (condensing lens 5) side. Next, as shown in FIGS. 4 and 5, the laser processing apparatus 1 causes the first laser beam L1 to enter the inside of the GaN wafer 20 from the first surface 20a, so that the laser processing apparatus 1 performs laser processing along the virtual plane 15 (for example, , a plurality of modified spots 13a are formed two-dimensionally along the entire virtual surface 15).

At this time, the laser processing apparatus 1 forms the plurality of modified spots 13a so that the plurality of cracks 14a extending from the plurality of modified spots 13a are not connected to each other. Further, the laser processing device 1 forms a plurality of rows of modified spots 13a (first modified spots) by moving the focal point C1 of the pulsed first laser beam L1 along the virtual plane 15. do. In addition, in FIGS. 4 and 5, the modification spot 13a is shown in white (no hatching), and the range in which the crack 14a extends is shown in broken lines (the same applies to other drawings).

In this embodiment, the pulsed first laser beam L1 is modulated by the spatial light modulator 4 so as to be focused on a plurality of (for example, six) focal points C1 lined up in the Y-axis direction. Then, the plurality of focal points C1 are relatively moved on the virtual plane 15 along the X-axis direction. As an example, the distance between adjacent focal points C1 in the Y-axis direction is 8 μm, and the pulse pitch of the first laser beam L1 (that is, the relative moving speed of the plurality of focal points C1) is The value divided by the repetition frequency of L1) is 10 μm. Further, the pulse energy of the first laser beam L1 per one focal point C1 (hereinafter simply referred to as "pulse energy of the first laser beam L1") is 0.33 μJ. In this case, the distance between the centers of adjacent modification spots 13a in the Y-axis direction is 8 μm, and the distance between the centers of adjacent modification spots 13a in the X-axis direction is 10 μm. Furthermore, the plurality of cracks 14a extending from the plurality of modification spots 13a are not connected to each other.

Next, as shown in FIGS. 6 and 7, the laser processing apparatus 1 causes the first laser beam L1 to enter the inside of the GaN wafer 20 from the first surface 20a, so that the laser processing apparatus 1 performs laser processing along the virtual plane 15 (for example, , a plurality of modified spots 13b (second modified spots) are formed two-dimensionally along the entire virtual surface 15). At this time, the laser processing apparatus 1 forms the plurality of modified spots 13b so as not to overlap the plurality of modified spots 13a and the plurality of cracks 14a. In addition, the laser processing apparatus 1 moves the focal point C1 of the pulsed first laser beam L1 along the virtual plane 15 between the plurality of rows of modification spots 13a, thereby improving the modification of the plurality of rows. A spot 13b is formed. In this step, a plurality of cracks 14b extending from a plurality of modification spots 13b may be connected to a plurality of cracks 14a. In addition, in FIG. 6 and FIG. 7, the modification spot 13b is shown by dot hatching, and the range in which the crack 14b extends is shown by a broken line (the same applies to other figures).

In this embodiment, the pulsed first laser beam L1 is modulated by the spatial light modulator 4 so as to be focused on a plurality of (for example, six) focal points C1 lined up in the Y-axis direction. Then, the plurality of focal points C1 are relatively moved on the virtual plane 15 along the X-axis direction at the center between the plurality of rows of modification spots 13a. As an example, the distance between adjacent focal points C1 in the Y-axis direction is 8 μm, and the pulse pitch of the first laser beam L1 is 10 μm. Further, the pulse energy of the first laser beam L1 is 0.33 μJ. In this case, the distance between the centers of adjacent modification spots 13b in the Y-axis direction is 8 μm, and the distance between the centers of adjacent modification spots 13b in the X-axis direction is 10 μm.

Subsequently, as shown in FIGS. 8 and 9, the laser processing apparatus 1 causes the first laser beam L1 to enter the inside of the GaN wafer 20 from the first surface 20a, so that the laser beam L1 is aligned along the virtual plane 15 (for example, , a plurality of modified spots (third modified spots) 13c are formed two-dimensionally along the entire virtual surface 15). Furthermore, as shown in FIGS. 10 and 11, the laser processing apparatus 1 causes the first laser beam L1 to enter the inside of the GaN wafer 20 from the first surface 20a, so that the laser processing apparatus 1 performs laser processing along the virtual plane 15 (for example, A plurality of modified spots (third modified spots) 13d are formed two-dimensionally along the entire virtual surface 15). At this time, the laser processing apparatus 1 forms the plurality of modified spots 13c and 13d so as not to overlap the plurality of modified spots 13a and 13b.

Further, the laser processing apparatus 1 moves the condensing point C1 of the pulsed first laser beam L1 along the virtual plane 15 between the plurality of rows of modification spots 13a and 13b. Modification spots 13c and 13d are formed. In this step, a plurality of cracks 14c and 14d extending from a plurality of modification spots 13c and 13d, respectively, may be connected to a plurality of cracks 14a and 14b. In addition, in FIGS. 8 and 9, the modification spot 13c is shown by solid hatching, and the range in which the crack 14c extends is shown by a broken line (the same applies to other drawings). In addition, in FIGS. 10 and 11, the modified spot 13d is shown by solid line hatching (solid line hatching that slopes opposite to the solid line hatching of the modified spot 13c), and the range in which the crack 14d extends is shown by a broken line. There is.

In this embodiment, the pulsed first laser beam L1 is modulated by the spatial light modulator 4 so as to be focused on a plurality of (for example, six) focal points C1 lined up in the Y-axis direction. Then, the plurality of focal points C1 are relatively moved on the virtual plane 15 along the X-axis direction at the center between the plurality of rows of modification spots 13a and 13b. As an example, the distance between adjacent focal points C1 in the Y-axis direction is 8 μm, and the pulse pitch of the first laser beam L1 is 5 μm. Further, the pulse energy of the first laser beam L1 is 0.33 μJ. In this case, the center-to-center distance between adjacent modified spots 13c in the Y-axis direction is 8 μm, and the center-to-center distance between adjacent modified spots 13c in the X-axis direction is 5 μm. Further, the center-to-center distance between adjacent modified spots 13d in the Y-axis direction is 8 μm, and the center-to-center distance between adjacent modified spots 13d in the X-axis direction is 5 μm.

In this first step, as described above, the first laser beam L1 is made to enter the GaN wafer 20 from the first surface 20a, and the condensing point C1 of the first laser beam L1 is moved within the virtual plane 15. As a result, a plurality of modified spots 13 arranged in a planar manner within the virtual surface 15 are formed.

The above first step is performed under the control of the control section 6 of the laser processing device 1. That is, here, the control unit 6 causes the first laser beam L1 to enter the GaN wafer 20 from the first surface 20a, and moves the condensing point C1 of the first laser beam L1 into the virtual plane 15. A first process of forming a plurality of modified spots 13 arranged in a planar manner within the virtual surface 15 is executed.

Furthermore, in this first step, a peripheral region 16 is formed in which the modified spot 13 is not formed (a crack extending from the modified spot may be formed). To this end, in the present embodiment, the condensing point C1 is moved from the outside of the GaN wafer 20 to the inside of the GaN wafer 20 through the periphery (edge) of the GaN wafer 20 while keeping the first laser beam L1 on. By making use of the fact that the focusing state of the first laser beam L1 changes (light focusing is inhibited) at the periphery (edge) of the GaN wafer 20, the peripheral area where the modified spot 13 is not formed is form 16. However, the modified spot 13 can be formed by using a mask that covers the periphery of the GaN wafer 20 or by turning off the first laser beam L1 when the focal point C1 passes through the periphery of the GaN wafer 20. It is also possible to form a peripheral region 16 that does not have a cylindrical shape.

In the laser processing method and semiconductor member manufacturing method according to the present embodiment, as shown in FIGS. 12 and 13, the laser processing apparatus 1 described above applies the laser processing method to the GaN wafer 20 along the lines A1 and A2. By irradiating two laser beams L2 (having a wavelength of 532 nm, for example), modified regions M1 and M2 (processing marks) linearly extending along lines A1 and A2 when viewed from the Z-axis direction are formed (second process). The second step will be explained in more detail.

In the second step, first, the laser processing apparatus 1 controls the stage 2 and the like so that the condensing point C2 of the second laser beam L2 is located inside the GaN wafer 20. Then, the laser processing device 1 controls the stage 2 and the laser irradiation unit so that the condensing point C2 of the second laser beam L2 moves relatively along the line A1 (on the line A1) when viewed from the Z-axis direction. . Here, as an example, the line A1 is arranged along the X-axis direction, and the stage 2 is set along the X-axis direction while the laser irradiation unit is irradiating the GaN wafer 20 with the second laser beam L2. By being moved, the focal point C2 is moved along the line A1.

The second laser beam L2 is irradiated along the line A2 from a position further away from the first surface 20a in the Z-axis direction (i.e., a deeper processing position of the GaN wafer 20), and from a position further away from the first surface 20a in the Z-axis direction. The process is repeated until a closer position (that is, a shallower processing position on the GaN wafer 20) is reached. At this time, the condensing point C2 may be located on the first surface 20a and the second surface 20b in the Z-axis direction.

However, when the condensing point C2 is located on the opposite side of the virtual surface 15 to the first surface 20a, which is the incident surface of the second laser beam L2 (that is, on the second surface 20b side), the virtual surface 15 The modification spots 13 and cracks 14 that have already been formed along the line prevent the second laser beam L2 from being focused. Therefore, the modified region M1 is not formed closer to the second surface 20b than the virtual surface 15. That is, here, the modified region M1 is formed from the first surface 20a to the virtual surface 15 when viewed from the X-axis direction or the Y-axis direction.

Subsequently, in the second step, in a state where the condensing point C2 of the second laser beam L2 is located inside the GaN wafer 20, the laser processing apparatus 1 aligns the condensing point C2 with the line A2 when viewed from the Z-axis direction. The stage 2 and the laser irradiation unit are controlled to relatively move along (on line A2). Here, as an example, the arrangement of the GaN wafer 20 is changed by rotating the stage 2 so that the line A2 is along the X-axis direction, and in this state, the laser irradiation unit applies the second laser beam L2 to the GaN wafer 2 By moving the stage 2 along the X-axis direction while irradiating the light, the condensing point C2 is moved along the line A2.

The second laser beam L2 is irradiated along the line A2 from a position further away from the first surface 20a in the Z-axis direction (i.e., a deeper processing position of the GaN wafer 20), and from a position further away from the first surface 20a in the Z-axis direction. The process is repeated until a closer position (that is, a shallower processing position on the GaN wafer 20) is reached. At this time, the condensing point C2 may be located on the first surface 20a and the second surface 20b in the Z-axis direction.

However, when the condensing point C2 is located on the opposite side of the virtual surface 15 to the first surface 20a, which is the incident surface of the second laser beam L2 (that is, on the second surface 20b side), the virtual surface 15 The modification spots 13 and cracks 14 that have already been formed along the line prevent the second laser beam L2 from being focused. Therefore, the modified region M2 is not formed closer to the second surface 20b than the virtual surface 15. That is, here, the modified region M2 is formed extending from the first surface 20a to the virtual surface 15 when viewed from the X-axis direction or the Y-axis direction.

The above second step is performed under the control of the control section 6 of the laser processing device 1. That is, after the first process, the control unit 6 irradiates the GaN wafer 20 with the second laser beam L2 along the lines A1 and A2, thereby forming lines A1 and A2 on the first surface 20a as seen from the Z-axis direction. A second process is performed to form modified regions M1 and M2 linearly extending along the line. In particular, in the second treatment, modified regions M1 and M2 are formed from the first surface 20a to the virtual surface 15 when viewed from the X-axis direction or Y-axis direction along the first surface 20a.

Note that the modified regions M1 and M2 here include a plurality of modified spots as well as cracks extending from the modified spots. Therefore, when the modified regions M1 and M2 are formed from a certain first position to another second position, modified spots are continuously formed between the first position and the second position. In some cases, cracks and modified spots are formed alternately between the first and second positions. Furthermore, there may be cases where a crack extending from one modified spot and a crack extending from another modified spot next to the one modified spot are not connected to each other. Therefore, what is present at the first position or the second position may be a modified spot, a crack, or a portion between cracks.

Note that the modified regions M1 and M2 (at least modified spots) are not formed in the peripheral region 16 (although cracks extending from the modified spots may be formed). That is, in the second step, the modified regions M1 and M2 are formed only in the portions where the virtual plane 15 and the lines A1 and A2 overlap when viewed from the Z-axis direction. Methods for this include using a mask that covers the periphery (edge) of the GaN wafer 20, and turning off the second laser beam L2 when the condensing point C2 passes through the periphery of the GaN wafer 20. It's okay. Alternatively, by moving the condensing point C2 from the outside of the GaN wafer 20 to the inside of the GaN wafer 20 through the periphery while keeping the second laser beam L2 on, a second laser beam can be generated at the periphery of the GaN wafer 20. The peripheral region 16 in which the modified regions M1 and M2 are not formed may be formed by utilizing the fact that the focusing state of the laser beam L2 changes (light focusing is inhibited).

Here, the irradiation conditions for the irradiation with the first laser beam L1 in the first step and the irradiation with the second laser beam L2 in the second step are different because the required modified area and the form of cracks are different. There is. That is, in the first step, in order to cut the GaN wafer 20 laterally (on a plane parallel to the first surface 20a (virtual plane 15)), the modified region and the crack are cut in the lateral direction (parallel to the first surface 20a). direction (X-axis direction and Y-axis direction)). Therefore, in the first step, the first laser beam L1 is irradiated to form point-shaped modified regions (molten/high internal pressure regions) and cracks, and to align the modified regions and cracks in the lateral direction. .

Then, due to the stress distribution caused by the increase in internal pressure, the cracks extending from each of the modified regions are laterally extended and connected, forming transverse cracks. This allows the GaN wafer 20 to be cut laterally. At this time, the pulse width of the first laser beam L1 is made relatively short compared to the pulse width of the second laser beam L2, and the pulse energy and pulse pitch of the first laser beam L1 are the same as those of the second laser beam L2. It can be made relatively small compared to the pulse energy and pulse pitch. As an example, the output of the first laser beam L1 is 1.5 μJ to 2 μJ, the pulse pitch is 1 μm, and dense processing is performed with relatively low output.

On the other hand, in the second step, in order to cut the GaN wafer 20 vertically (in a plane perpendicular to the first surface 20a), the modified regions and cracks (modified layer) are cut in the vertical direction (in a plane perpendicular to the first surface 20a). direction (Z-axis direction)). Therefore, in the second step, the second laser beam L2 is emitted so as to form vertically long modified regions (melting/high internal pressure regions) and cracks, and to align the vertically long modified regions and cracks in the vertical direction. irradiate.

Then, the stress distribution caused by the increase in internal pressure causes adjacent cracks to be stretched and extended in the vertical direction. This allows the GaN wafer 20 to be cut vertically. At this time, the pulse width of the second laser beam L2 is made relatively longer than the pulse width of the first laser beam L1, and the pulse energy and pulse pitch of the second laser beam L2 are different from those of the first laser beam L1. It can be relatively large compared to the pulse energy and pulse pitch. As an example, the output of the second laser beam L2 is 10 μJ to 20 μJ, and the pulse pitch is 10 μm, so that relatively high output and sparse processing is performed. In this example, the output and pulse pitch of the first laser beam L1 are approximately 1/10 of the output and pulse pitch of the second laser beam L2.

In the laser processing method and the semiconductor member manufacturing method according to the present embodiment, a heating device including a heater or the like heats the GaN wafer 20 and connects the plurality of cracks 14 extending from the plurality of modification spots 13 to each other. As a result, as shown in FIG. 14, a crack 17 (hereinafter simply referred to as "crack 17") extending across the virtual surface 15 is formed. Note that the plurality of cracks 14 may be connected to each other to form the cracks 17 by applying some force to the GaN wafer 20 by a method other than heating. Furthermore, by forming a plurality of modification spots 13 along the virtual plane 15, a plurality of cracks 14 may be connected to each other to form a crack 17.

Here, in the GaN wafer 20, nitrogen gas is generated within the plurality of cracks 14 extending from the plurality of modification spots 13, respectively. Therefore, by heating the GaN wafer 20 and expanding the nitrogen gas, the cracks 17 can be formed using the pressure (internal pressure) of the nitrogen gas. Moreover, since the peripheral region 16 prevents the plurality of cracks 14 from progressing to the outside of the virtual surface 15 surrounded by the peripheral region 16 (for example, the outer edge (side surface) of the GaN wafer 20), This makes it possible to prevent the nitrogen gas from escaping to the outside of the virtual surface 15. That is, the peripheral area 16 is a non-modified area that does not include the modified spot 13, and when a crack 17 is formed in the virtual surface 15 surrounded by the peripheral area 16, the peripheral area 16 is a non-modified area that does not include the modified spot 13. This is a region that prevents the propagation of the plurality of cracks 14 to the outside. Therefore, it is preferable that the width of the peripheral region 16 is 30 μm or more.

FIG. 15 is a plan view (photograph) of a GaN wafer showing a state in which a crack has been formed across a virtual plane. Gallium (precipitate) is deposited in the crack 17 spanning the virtual plane 15 by irradiation with the second laser beam L2. As a result, as shown in FIG. 15, the crack 17 is observed as a portion darker than other portions (the transmittance of observation light is decreased). Here, it is understood that the cracks 17 extending across the virtual plane 15 are formed over portions of the GaN wafer 20 corresponding to each of the chips 30A.

Note that when forming the peripheral region 16, if a change in the convergence state at the peripheral edge of the GaN wafer 20 is utilized, the peripheral region 16 may include a slight crack extending from the modified spot 13. As a result, a portion 16a is formed in the peripheral region 16, where the crack 17 reaches the outer edge of the chip 30A (the outer edge of the GaN wafer 20). The portion 16a has a function of venting nitrogen gas generated within the crack 17. Thereby, an excessive increase in internal pressure in the GaN wafer 20 can be suppressed.

In the laser processing method and the semiconductor member manufacturing method according to the present embodiment, as shown in FIG. As shown in FIG. 16, a plurality of chips 30A and 30B are obtained from the GaN wafer 20 with the crack 17 and the modified regions M1 and M2 as boundaries (third step). In this way, the GaN wafer 20 is cut along the virtual plane 15 and the lines A1 and A2. Note that in this step, a portion of the GaN wafer 20 corresponding to the peripheral region 16 may be removed by machining other than grinding, laser processing, or the like.

Among the above steps, the steps up to the steps of forming modified regions M1 and M2 along lines A1 and A2 are the laser processing method according to the present embodiment. Furthermore, among the above steps, the steps up to the step of obtaining a plurality of chips 30A, 30B from the GaN wafer 20 with the crack 17 and the modified regions M1, M2 as boundaries constitute the semiconductor member manufacturing method of this embodiment.

As explained above, in the laser processing method according to the present embodiment, in the first step, the first laser beam L1 is made incident on the GaN wafer 20 from the first surface 20a of the GaN wafer 20, and the first laser beam L1 is focused. The light spot C1 is moved into the virtual surface 15 facing the first surface 20a of the GaN wafer 20, and a plurality of modified spots 13 arranged in a planar manner are formed within the virtual surface 15. Therefore, the GaN wafer 20 can be cut using the crack 17 extending from the modification spot 13 and extending across the virtual plane 15 as a boundary. In particular, in this method, after the first step, in the second step, by irradiating the second laser beam L2 along the lines A1 and A2 along the first surface 20a of the GaN wafer 20, the lines A1, Modified regions M1 and M2 are formed linearly along A2. The modified regions M1 and M2 are formed from the first surface 20a of the GaN wafer 20 to the virtual surface 15. Therefore, after the second step, in addition to cutting with the crack 17 across the virtual plane 15 as a boundary, cutting can be performed with the modified regions M1 and M2 as boundaries. Therefore, according to this method, it is possible to obtain the chip 30A with a different shape (smaller unit) than the original GaN wafer 20.

Furthermore, in the laser processing method according to the present embodiment, in the first step, a peripheral region 16 including the peripheral edge of the GaN wafer 20 when viewed from the Z-axis direction and in which the modification spot 13 is not formed is formed. Therefore, the peripheral region 16 can prevent the cracks 14 extending from the modification spot 13 from reaching the outer edge of the GaN wafer 20 .

Further, in the laser processing method according to the present embodiment, in the first step, the condensing point C1 of the first laser beam L1 is moved from the outside of the GaN wafer 20 through the periphery to the inside of the GaN wafer 20 as seen from the Z direction. The peripheral region 16 is formed by moving it so as to reach the center. In this way, by moving the condensing point C1 of the first laser beam L1 from the outside of the GaN wafer 20 through the periphery to the inside, changes in the condensing state at the periphery (inhibition of light condensation) can be utilized. Therefore, the peripheral region 16 where the modified spot 13 is not formed can be easily formed.

Furthermore, in the laser processing method according to the present embodiment, the material of the object 11 contains gallium. Therefore, when gallium is deposited in the plurality of cracks 14 extending from the plurality of modification spots 13 by irradiation with the first laser beam L1, the first laser beam L1 is easily absorbed by the gallium. Therefore, it is possible to form the crack 17 across the virtual surface 15 with a smaller output power.

Furthermore, in the laser processing method according to the present embodiment, the material of the object 11 includes gallium nitride. Therefore, when gallium nitride is decomposed by irradiation with the first laser beam L1, nitrogen gas is generated within the crack 14. Therefore, using the pressure (internal pressure) of the nitrogen gas, it is possible to easily form the crack 17 across the virtual surface 15.

Note that the semiconductor member manufacturing method according to the present embodiment includes the first step and the second step included in the above-described laser processing method, and a crack 17 extending from the modification spot 13 and extending across the virtual surface 15 after the second step. , a third step of obtaining chips 30A, 30B from GaN wafer 20 with modified regions M1, M2 as boundaries. Therefore, for the same reason, it is possible to obtain the chip 30A in a different shape (smaller unit) than the original GaN wafer 20.

Furthermore, in the laser processing apparatus 1 according to the present embodiment, in the first process, the first laser beam L1 is made incident on the GaN wafer 20 from the first surface 20a of the GaN wafer 20, and the convergence point C1 of the first laser beam L1 is is moved into the virtual surface 15 facing the first surface 20a of the GaN wafer 20, and a plurality of modification spots 13 arranged in a planar manner are formed within the virtual surface 15. Therefore, the GaN wafer 20 can be cut using the crack 17 extending from the modification spot 13 and extending across the virtual plane 15 as a boundary. In particular, in the laser processing apparatus 1, after the first process, in the second process, the lines A1 and A2 along the first surface 20a of the GaN wafer 20 are irradiated with the second laser beam L2. Linear modified regions M1 and M2 are formed along A1 and A2. The modified regions M1 and M2 are formed from the first surface 20a of the GaN wafer 20 to the virtual surface 15. Therefore, after the second process, in addition to cutting with the crack 17 across the virtual surface 15 as a boundary, cutting with the modified regions M1 and M2 as boundaries is possible. Therefore, according to this apparatus, it is possible to obtain a GaN wafer 20 having a different shape (smaller unit) from the original GaN wafer 20.

Here, experimental results showing that when a GaN wafer is formed by the laser processing method and semiconductor member manufacturing method of this embodiment, the unevenness appearing on the peeled surface of the GaN wafer becomes smaller will be described. In the following description, a GaN ingot is used as the object 11 and a GaN wafer is formed by peeling the GaN ingot along the virtual plane 15. However, chips are formed by peeling the GaN wafer 20 along the virtual plane 15. The same applies when forming 30A and 30B.

FIG. 17 is an image of the peeled surface of a GaN wafer formed by an example laser processing method and semiconductor member manufacturing method, and FIGS. 18(a) and (b) show the height of the peeled surface shown in FIG. 17. It is a profile. In this example, the first laser beam L1 having a wavelength of 532 nm is made to enter the inside of the GaN ingot from the first surface 20a of the GaN ingot, and one converging point C1 is focused on the virtual plane 15 along the X-axis direction. By relatively moving, a plurality of modified spots 13 were formed along the virtual plane 15. At this time, the distance between adjacent focal points C1 in the Y-axis direction was 10 μm, the pulse pitch of the first laser beam L1 was 1 μm, and the pulse energy of the first laser beam L1 was 1 μJ. In this case, as shown in FIGS. 18A and 18B, irregularities of about 25 μm appeared on the peeled surface of the GaN wafer (the surface formed by the cracks 17).

FIG. 19 is an image of the peeled surface of a GaN wafer formed by another example of a laser processing method and a semiconductor member manufacturing method, and FIGS. 20(a) and (b) are images of the peeled surface shown in FIG. 19. height profile. In this example, the first laser beam L1 having a wavelength of 532 nm is made to enter the inside of the GaN ingot from the first surface 20a of the GaN ingot, and the first and second steps of the laser processing method and semiconductor member manufacturing method of this embodiment are performed. Similar to the process, a plurality of modified spots 13 were formed along the virtual surface 15.

When forming the plurality of modification spots 13a, the distance between adjacent focal points C1 in the Y-axis direction is set to 6 μm, the pulse pitch of the first laser beam L1 is set to 10 μm, and the pulse energy of the first laser beam L1 is set to 0. .33 μJ. When forming the plurality of modification spots 13b, the distance between adjacent focal points C1 in the Y-axis direction is 6 μm, the pulse pitch of the first laser beam L1 is 10 μm, and the pulse energy of the first laser beam L1 is 0. .33 μJ. When forming a plurality of modification spots 13c, the distance between adjacent focal points C1 in the Y-axis direction is 6 μm, the pulse pitch of the first laser beam L1 is 5 μm, and the pulse energy of the first laser beam L1 is 0. .33 μJ. When forming the plurality of modification spots 13d, the distance between adjacent focal points C1 in the Y-axis direction is 6 μm, the pulse pitch of the first laser beam L1 is 5 μm, and the pulse energy of the first laser beam L1 is 0. .33 μJ. In this case, as shown in FIGS. 20(a) and 20(b), irregularities of about 5 μm appeared on the peeled surface of the GaN wafer.

From the above experimental results, it was found that in the GaN wafer formed by the laser processing method and semiconductor member manufacturing method of the present embodiment, the unevenness appearing on the peeled surface of the GaN wafer is reduced, that is, the crack 17 is formed along the virtual plane 15. It was found that it was formed with good precision. Note that when the unevenness appearing on the peeled surface of the GaN wafer becomes smaller, the amount of grinding required to flatten the peeled surface can be reduced. Therefore, reducing the unevenness that appears on the peeled surface of the GaN wafer is advantageous in terms of material utilization efficiency and production efficiency.

Next, the principle of appearance of irregularities on the peeled surface of the GaN wafer will be explained.

For example, as shown in FIG. 21, a plurality of modified spots 13a are formed along the virtual plane 15, and the modified spots 13b are arranged in a virtual manner such that they overlap with the cracks 14a extending from the modified spots 13a on one side. A plurality of modified spots 13b are formed along the surface 15. In this case, the first laser beam L1 is likely to be absorbed by the gallium precipitated in the plurality of cracks 14a, so even if the condensing point C1 is located on the virtual plane 15, the modification spot 13a is Therefore, the modification spot 13b is easily formed on the incident side of the first laser beam L1.

Subsequently, a plurality of modified spots 13c are formed along the virtual plane 15 so that the modified spots 13c overlap the cracks 14b extending from the modified spots 13b on one side. In this case as well, the first laser beam L1 is easily absorbed by the gallium precipitated in the plurality of cracks 14b, so even if the condensing point C1 is located on the virtual plane 15, the modification spot 13b is Therefore, the modification spot 13c is easily formed on the incident side of the first laser beam L1. In this example, the plurality of modified spots 13b are formed on the incident side of the first laser beam L1 with respect to the plurality of modified spots 13a, and the plurality of modified spots 13c are formed on the incident side of the first laser beam L1 with respect to the plurality of modified spots 13a. 13b is more likely to be formed on the incident side of the first laser beam L1.

On the other hand, for example, as shown in FIG. 22, a plurality of modified spots 13a are formed along the virtual plane 15 so that the modified spots 13b do not overlap the cracks 14a extending from the modified spots 13a on both sides. , a plurality of modification spots 13b are formed along the virtual plane 15. In this case, although the first laser beam L1 is easily absorbed by the gallium precipitated in the plurality of cracks 14a, since the modification spot 13b does not overlap the crack 14a, the modification spot 13b also It is formed on the virtual surface 15 similarly.

Subsequently, a plurality of modified spots 13c are formed along the virtual plane 15 so that the modified spots 13c overlap the cracks 14a, 14b extending from the modified spots 13a, 13b on both sides thereof. Furthermore, a plurality of modified spots 13d are formed along the virtual plane 15 so that the modified spots 13d overlap the cracks 14a and 14b extending from the modified spots 13a and 13b on both sides thereof. In these cases, the first laser beam L1 is easily absorbed by the gallium precipitated in the plurality of cracks 14a and 14b, so even if the focal point C1 is located on the virtual plane 15, the modified spot Modification spots 13c and 13d are more likely to be formed on the incident side of the first laser beam L1 with respect to spots 13a and 13b. In this way, in this example, the plurality of modified spots 13c and 13d are simply formed on the incident side of the second laser beam L2 relative to the plurality of modified spots 13a and 13b.

Based on the above principle, in the laser processing method and semiconductor member manufacturing method of the present embodiment, the plurality of modified spots 13a and the plurality of cracks 14a extending from the plurality of modified spots 13a do not overlap. It can be seen that forming the spot 13b is extremely important in reducing the unevenness appearing on the peeled surface of the GaN wafer.

Next, experimental results showing that the crack 17 grows accurately along the virtual plane 15 in the laser processing method and semiconductor member manufacturing method of this embodiment will be explained.

23(a) and 23(b) are images of cracks formed during an example laser processing method and semiconductor member manufacturing method, and FIG. 23(b) is an image of a rectangle in FIG. 23(a). This is an enlarged image within the frame. In this example, the first laser beam L1 having a wavelength of 532 nm is made to enter the inside of the GaN ingot from the first surface 20a of the GaN ingot, and six converging points C1 lined up in the Y-axis direction are focused along the X-axis direction. By relatively moving on the virtual surface 15, a plurality of modified spots 13 were formed along the virtual surface 15. At this time, the distance between adjacent focal points C1 in the Y-axis direction was 6 μm, the pulse pitch of the first laser beam L1 was 1 μm, and the pulse energy of the first laser beam L1 was 1.33 μJ. Then, laser processing was stopped midway along the virtual surface 15. In this case, as shown in FIGS. 23(a) and 23(b), the crack that developed from the processed area to the unprocessed area deviated significantly from the virtual plane 15 in the unprocessed area.

24(a) and 24(b) are images of cracks formed during another example of a laser processing method and a semiconductor member manufacturing method, and FIG. This is an enlarged image within a rectangular frame in . In this example, the first laser beam L1 having a wavelength of 532 nm is made to enter the inside of the GaN ingot from the first surface 20a of the GaN ingot, and six converging points C1 lined up in the Y-axis direction are focused along the X-axis direction. By relatively moving on the virtual surface 15, a plurality of modified spots 13 were formed along the virtual surface 15. Specifically, first, the first A plurality of rows of modified spots 13 were formed in the processing area and the second processing area.

Next, the first processing area and the In the second processing area, a plurality of rows of modified spots 13 were formed such that each row was located at the center between the rows of the already formed rows of modified spots 13. Subsequently, the distance between adjacent focal points C1 in the Y-axis direction was set to 6 μm, the pulse pitch of the first laser beam L1 was set to 5 μm, and the pulse energy of the first laser beam L1 was set to 0.33 μJ, and only the first processing area was processed. A plurality of rows of modified spots 13 were formed such that each row was located at the center between the rows of already formed modified spots 13. In this case, as shown in FIGS. 24(a) and 24(b), the crack that developed from the first processing area to the second processing area did not deviate significantly from the virtual plane 15 in the second processing area.

From the above experimental results, it was found that in the laser processing method and semiconductor member manufacturing method of this embodiment, the crack 17 grows along the virtual plane 15 with high accuracy. It is assumed that this is because the plurality of modified spots 13 previously formed in the second processed area served as a guide when the crack propagated.

Next, in the laser processing method and semiconductor member manufacturing method of the present embodiment, an experiment was conducted to show that the amount of extension of the crack 14 extending from the modification spot 13 to the incident side of the first laser beam L1 and the opposite side thereof is suppressed. Explain the results.

FIG. 25 is an image (side view image) of modified spots and cracks formed by the laser processing method and semiconductor member manufacturing method of the comparative example. In this comparative example, the first laser beam L1 having a wavelength of 532 nm is made to enter the inside of the GaN ingot from the first surface 20a of the GaN ingot, and one converging point C1 is set on the virtual plane 15 along the X-axis direction. A plurality of modified spots 13 were formed along the virtual surface 15 by relatively moving the . Specifically, the distance between adjacent converging points C1 in the Y-axis direction is 2 μm, the pulse pitch of the first laser beam L1 is 5 μm, and the pulse energy of the first laser beam L1 is 0.3 μJ. A plurality of modified spots 13 were formed along the line. In this case, as shown in FIG. 25, the length of the crack 14 extending from the modification spot 13 to the incident side of the first laser beam L1 and the opposite side thereof was approximately 100 μm.

FIG. 26 is an image of modified spots and cracks formed by the laser processing method and semiconductor member manufacturing method of the first embodiment, and FIG. 26(a) is an image in plan view, and FIG. 26(b) is an image in plan view. is a side view image. In this first example, the first laser beam L1 having a wavelength of 532 nm is made to enter the inside of the GaN ingot from the first surface 20a of the GaN ingot, and the six converging points C1 lined up in the Y-axis direction are focused in the X-axis direction. By relatively moving on the virtual surface 15 along the virtual surface 15, a plurality of modified spots 13 were formed along the virtual surface 15. Specifically, first, the distance between adjacent focal points C1 in the Y-axis direction is 8 μm, the pulse pitch of the first laser beam L1 is 10 μm, and the pulse energy of the first laser beam L1 is 0.3 μJ. A plurality of modified spots 13a were formed along 15.

Next, with the six condensing points C1 lined up in the Y-axis direction shifted by +4 μm in the Y-axis direction from the previous state, the distance between adjacent condensing points C1 in the Y-axis direction was set to 8 μm, and the first laser beam L1 A plurality of modification spots 13b were formed along the virtual plane 15 by setting the pulse pitch of 10 μm and the pulse energy of the first laser beam L1 to 0.3 μJ. Next, with the six condensing points C1 lined up in the Y-axis direction shifted by -4 μm in the Y-axis direction from the previous state, the distance between adjacent condensing points C1 in the Y-axis direction was set to 8 μm, and the first laser beam was A plurality of modification spots 13 were formed along the virtual plane 15 by setting the pulse pitch of L1 to 5 μm and the pulse energy of the first laser beam L1 to 0.3 μJ.

Next, with the six condensing points C1 lined up in the Y-axis direction shifted by +4 μm in the Y-axis direction from the previous state, the distance between adjacent condensing points C1 in the Y-axis direction was set to 8 μm, and the first laser beam L1 A plurality of modification spots 13 were formed along the virtual plane 15 with a pulse pitch of 5 μm and a pulse energy of the first laser beam L1 of 0.3 μJ. As a result, the modified spot 13a formed at the first time and the modified spot 13 formed at the third time overlap each other, and the modified spot 13b formed at the second time and the modified spot 13 formed at the fourth time overlap each other. It is assumed that In this case, as shown in FIG. 26(b), the length of the crack 14 extending from the modification spot 13 to the incident side of the first laser beam L1 and the opposite side was approximately 70 μm.

FIGS. 27(a) and 27(b) are images of modified spots and cracks formed by the laser processing method and semiconductor member manufacturing method of the second example, and FIG. 27(a) is a plan view. The image shown in FIG. 27(b) is a side view. In this second example, the first laser beam L1 having a wavelength of 532 nm is made to enter the inside of the GaN ingot from the first surface 20a of the GaN ingot, and the first step of the laser processing method and semiconductor member manufacturing method of this embodiment is performed. Similarly to the second step, a plurality of modified spots 13 were formed along the virtual surface 15. When forming a plurality of modification spots 13a, the distance between adjacent focal points C1 in the Y-axis direction is set to 8 μm, the pulse pitch of the first laser beam L1 is set to 10 μm, and the pulse energy of the first laser beam L1 is set to 0. .3 μJ.

When forming the plurality of modification spots 13b, the distance between adjacent focal points C1 in the Y-axis direction is 8 μm, the pulse pitch of the first laser beam L1 is 10 μm, and the pulse energy of the first laser beam L1 is 0 μm. .3 μJ. When forming the plurality of modification spots 13c, the distance between adjacent focal points C1 in the Y-axis direction is 8 μm, the pulse pitch of the first laser beam L1 is 5 μm, and the pulse energy of the first laser beam L1 is 0. .3 μJ. When forming the plurality of modification spots 13d, the distance between adjacent focal points C1 in the Y-axis direction is 8 μm, the pulse pitch of the first laser beam L1 is 5 μm, and the pulse energy of the first laser beam L1 is 0. .3 μJ. In this case, as shown in FIG. 27(b), the length of the crack 14 extending from the modification spot 13 to the incident side of the first laser beam L1 and the opposite side was approximately 50 μm.

FIGS. 27(c) and 27(d) are images of modified spots and cracks formed by the laser processing method and semiconductor member manufacturing method of the third embodiment, and FIG. 27(c) is a plan view. The image shown in FIG. 27(d) is a side view. In this third embodiment, along the virtual surface 15 in the state shown in FIGS. , a plurality of modified spots 13 were formed.

Specifically, first, the distance between adjacent focal points C1 in the Y-axis direction is 8 μm, the pulse pitch of the first laser beam L1 is 5 μm, and the pulse energy of the first laser beam L1 is 0.1 μJ. A plurality of rows of modified spots 13 were formed such that each row was located at the center between the rows of modified spots 13. In this case, as shown in FIG. 27(d), the length of the crack 14 extending from the modification spot 13 to the incident side of the first laser beam L1 and the opposite side was approximately 60 μm.

From the above experimental results, if a plurality of modified spots 13b are formed along the virtual surface 15 so as not to overlap with the plurality of modified spots 13a and the plurality of cracks 14a already formed along the virtual surface 15, ( In the first example, the second example, and the third example), it was found that the amount of extension of the crack 14 extending from the modification spot 13 to the incident side of the first laser beam L1 and the opposite side thereof was suppressed. In addition, when forming a plurality of modification spots 13 along the virtual surface 15, the modification spots 13 are formed on the virtual surface 15 so as not to overlap the plurality of modification spots 13a and 13b that have already been formed along the virtual surface 15. If a plurality of modification spots 13 are formed along the virtual surface 15 (second and third embodiments), it becomes easier to form cracks across the virtual surface 15.

The above embodiment describes one form of a laser processing method, a semiconductor member manufacturing method, and a laser processing apparatus according to one aspect of the present disclosure. Therefore, the laser processing method, semiconductor member manufacturing method, and laser processing apparatus described above may be modified as desired. Modifications will be described below.

In the embodiment described above, the GaN wafer 20 is illustrated as the target object 11. However, the object 11 may be, for example, a GaN ingot (semiconductor ingot) or any other semiconductor object. When the target object 11 is a GaN ingot, for example, a GaN wafer can be obtained as the semiconductor member. In this case, a GaN wafer having a shape different from that of a GaN ingot can be obtained.

Moreover, in the embodiment described above, the line A1 and the line A2 intersecting the line A1 are set as standards for forming the modified regions M1 and M2 (cutting standards). However, depending on the shape and number of semiconductor components (chips 30A, 30B) required, the lines A1 and A2 can be set in any shape or relative relationship, and the lines A1 and A2 are not limited to a pair of lines A1 and A2. One line or three or more lines may be set.

DESCRIPTION OF SYMBOLS 1...Laser processing device, 2...Stage, 4...Spatial light modulator (laser irradiation unit), 5...Condensing lens (laser irradiation unit), 6...Control unit, 11...Object (semiconductor object), 13... Modification spot, 15... Virtual surface, 16... Peripheral region, 17... Crack, 20... GaN wafer (semiconductor wafer, semiconductor object), 20a... First surface, 20b... Second surface, 30A, 30B... Chip (semiconductor chip, semiconductor member), A1, A2... line, C, C1, C2... focal point, L... laser beam, L1... first laser beam, L2... second laser beam, M1, M2... modified region.

Claims (5)

A laser processing method for cutting the semiconductor object along a virtual plane facing a first surface of the semiconductor object inside the semiconductor object and a line extending along the first surface. ,
A first laser beam is made incident on the semiconductor object from the first surface, and a condensing point of the first laser beam is moved within the virtual plane, thereby forming a plurality of planes arranged in a planar manner within the virtual plane. A first step of forming a modification spot;
After the first step, by irradiating the semiconductor object with a second laser beam along the line, the semiconductor object undergoes modification that extends linearly along the line when viewed from a first direction intersecting the first surface. a second step of forming a region;
Equipped with
In the second step, the modified region is formed from the first surface to the virtual surface when viewed from a second direction along the first surface,
the semiconductor object material includes gallium nitride;
forming a crack across the virtual surface using the internal pressure of nitrogen gas generated within the crack extending from the modification spot;
In the first step, a peripheral region including a peripheral edge of the semiconductor object when viewed from the first direction and in which the modification spot is not formed is formed;
Laser processing method. In the first step, the condensing point of the first laser beam is moved from the outside of the semiconductor object through the periphery to the inside of the semiconductor object when viewed from the first direction. , forming the peripheral region;
The laser processing method according to claim 1 . The first step and the second step included in the laser processing method according to claim 1 or 2 ,
After the second step, a third step of obtaining a semiconductor member from the semiconductor object with boundaries between a crack extending from the modification spot and spanning the virtual surface and the modification region;
A semiconductor member manufacturing method comprising: The semiconductor object is a semiconductor ingot,
the semiconductor member is a semiconductor wafer;
The semiconductor member manufacturing method according to claim 3 . The semiconductor object is a semiconductor wafer,
the semiconductor member is a semiconductor chip;
The semiconductor member manufacturing method according to claim 3 .

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