JP7407679B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7407679B2 JP7407679B2 JP2020151004A JP2020151004A JP7407679B2 JP 7407679 B2 JP7407679 B2 JP 7407679B2 JP 2020151004 A JP2020151004 A JP 2020151004A JP 2020151004 A JP2020151004 A JP 2020151004A JP 7407679 B2 JP7407679 B2 JP 7407679B2
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- Prior art keywords
- heat sink
- recess
- sealing resin
- semiconductor device
- insulating layer
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- 239000004065 semiconductor Substances 0.000 title claims description 47
- 239000011347 resin Substances 0.000 claims description 36
- 229920005989 resin Polymers 0.000 claims description 36
- 238000007789 sealing Methods 0.000 claims description 32
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 230000002250 progressing effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000004080 punching Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000009751 slip forming Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
実施の形態1について、図面を用いて以下に説明する。図1は、実施の形態1に係る半導体装置100の断面図である。図2は、半導体装置100が備えるヒートシンク5の底面図である。
次に、実施の形態2に係る半導体装置100について説明する。図3は、実施の形態2に係る半導体装置100が備えるヒートシンク5の底面図である。図4は、実施の形態2の変形例1に係る半導体装置100が備えるヒートシンク5の底面図である。図5は、実施の形態2の変形例2に係る半導体装置100が備えるヒートシンク5の底面図である。なお、実施の形態2において、実施の形態1で説明したものと同一の構成要素については同一符号を付して説明は省略する。
次に、実施の形態3に係る半導体装置100について説明する。図6は、実施の形態3に係る半導体装置100の拡大断面図である。なお、実施の形態3において、実施の形態1,2で説明したものと同一の構成要素については同一符号を付して説明は省略する。
Claims (2)
- ヒートシンクと、
前記ヒートシンクの上面に設けられた絶縁層と、
前記絶縁層の上面に固定されたリードフレームと、
前記リードフレームの上面に搭載された半導体素子と、
前記ヒートシンクの底面を露出させた状態で、前記ヒートシンクおよび前記半導体素子を封止する封止樹脂と、を備え、
前記ヒートシンクの底面における周縁部には、段差状に凹む底面段差部が形成され、
前記底面段差部には上方に凹み、前記封止樹脂から露出しない第1凹部が形成され、
前記ヒートシンクの上面には下方に凹む第2凹部が形成され、
前記第1凹部は不連続的に前記底面段差部の4つの角部のみに形成された、半導体装置。 - 前記第2凹部は、前記ヒートシンクの上面における外周部に形成された、請求項1に記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020151004A JP7407679B2 (ja) | 2020-09-09 | 2020-09-09 | 半導体装置 |
DE102021120264.7A DE102021120264B4 (de) | 2020-09-09 | 2021-08-04 | Halbleitervorrichtung |
CN202111031125.7A CN114242666A (zh) | 2020-09-09 | 2021-09-03 | 半导体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020151004A JP7407679B2 (ja) | 2020-09-09 | 2020-09-09 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022045413A JP2022045413A (ja) | 2022-03-22 |
JP7407679B2 true JP7407679B2 (ja) | 2024-01-04 |
Family
ID=80266859
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2020151004A Active JP7407679B2 (ja) | 2020-09-09 | 2020-09-09 | 半導体装置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP7407679B2 (ja) |
CN (1) | CN114242666A (ja) |
DE (1) | DE102021120264B4 (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001035985A (ja) | 1999-07-19 | 2001-02-09 | Denso Corp | 樹脂封止半導体装置 |
JP2010199494A (ja) | 2009-02-27 | 2010-09-09 | Mitsubishi Electric Corp | 半導体装置及び半導体装置の製造方法 |
JP2011258814A (ja) | 2010-06-10 | 2011-12-22 | Toyota Motor Corp | 半導体装置冷却器 |
WO2013125474A1 (ja) | 2012-02-24 | 2013-08-29 | 三菱電機株式会社 | 半導体装置とその製造方法 |
WO2014006724A1 (ja) | 2012-07-05 | 2014-01-09 | 三菱電機株式会社 | 半導体装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5041902A (en) | 1989-12-14 | 1991-08-20 | Motorola, Inc. | Molded electronic package with compression structures |
JP2540478B2 (ja) * | 1993-11-04 | 1996-10-02 | 株式会社後藤製作所 | 半導体装置用放熱板及びその製造方法 |
WO1996027903A1 (en) | 1995-03-06 | 1996-09-12 | National Semiconductor Corporation | Heat sink for integrated circuit packages |
US6159764A (en) | 1997-07-02 | 2000-12-12 | Micron Technology, Inc. | Varied-thickness heat sink for integrated circuit (IC) packages and method of fabricating IC packages |
JP2008037933A (ja) | 2006-08-02 | 2008-02-21 | Nof Corp | シール材及びその製造方法 |
TW200812023A (en) | 2006-08-22 | 2008-03-01 | Advanced Semiconductor Eng | Heat slug for package structure |
JP2008311366A (ja) * | 2007-06-13 | 2008-12-25 | Denso Corp | 樹脂封止型半導体装置 |
JP2012033665A (ja) * | 2010-07-30 | 2012-02-16 | On Semiconductor Trading Ltd | 半導体装置及びその製造方法 |
JP5928485B2 (ja) * | 2012-02-09 | 2016-06-15 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP6617655B2 (ja) * | 2016-07-19 | 2019-12-11 | 三菱電機株式会社 | 半導体装置 |
CN110392924B (zh) * | 2017-02-21 | 2022-11-15 | 三菱电机株式会社 | 半导体装置 |
-
2020
- 2020-09-09 JP JP2020151004A patent/JP7407679B2/ja active Active
-
2021
- 2021-08-04 DE DE102021120264.7A patent/DE102021120264B4/de active Active
- 2021-09-03 CN CN202111031125.7A patent/CN114242666A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001035985A (ja) | 1999-07-19 | 2001-02-09 | Denso Corp | 樹脂封止半導体装置 |
JP2010199494A (ja) | 2009-02-27 | 2010-09-09 | Mitsubishi Electric Corp | 半導体装置及び半導体装置の製造方法 |
JP2011258814A (ja) | 2010-06-10 | 2011-12-22 | Toyota Motor Corp | 半導体装置冷却器 |
WO2013125474A1 (ja) | 2012-02-24 | 2013-08-29 | 三菱電機株式会社 | 半導体装置とその製造方法 |
WO2014006724A1 (ja) | 2012-07-05 | 2014-01-09 | 三菱電機株式会社 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2022045413A (ja) | 2022-03-22 |
DE102021120264B4 (de) | 2024-07-25 |
DE102021120264A1 (de) | 2022-03-10 |
CN114242666A (zh) | 2022-03-25 |
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