JP7376463B2 - Non-contact communication medium, magnetic tape cartridge, and method for manufacturing non-contact communication medium - Google Patents

Description

The technology of the present disclosure relates to a non-contact communication medium, a magnetic tape cartridge, and a method of manufacturing a non-contact communication medium.

Patent Document 1 discloses a contactless communication medium that includes a memory section, a power generation section, a power monitoring section, and a capacity control section. In the contactless communication medium described in Patent Document 1, the memory section stores predetermined management information. The power generating section includes a resonant circuit having an antenna coil and a resonant capacitor section whose capacitance value is variable, and a rectifying circuit that rectifies the resonant output of the resonant circuit, and generates power to be supplied to the memory section. The power monitoring unit includes a current regulating element connected in parallel to the resonant circuit with the rectifier circuit and configured to have a variable resistance value, a reference voltage generation source that generates a reference voltage, and an output voltage of the rectifier circuit that is connected to the reference voltage. and an operational amplifier that controls the current adjustment element so that the current is equal to the current adjustment element. The capacitance control section is configured to control the resonant capacitance section based on the output of the operational amplifier.

Patent Document 2 discloses a contactless communication medium for a recording medium cartridge, which includes a circuit component, a support substrate, and an antenna coil. In the contactless communication medium described in Patent Document 2, the circuit component includes a built-in memory section that can store management information regarding the recording medium cartridge. The support substrate supports circuit components. The antenna coil has a coil portion electrically connected to the circuit component and formed on the support substrate, and the inductance value of the coil portion is 0.3 μH or more and 2.0 μH or less.

Patent Document 3 discloses a contactless communication medium that includes a voltage generation section, a memory section, a clock signal generation section, and a control section. In the non-contact communication medium described in Patent Document 3, the voltage generator includes an antenna coil for transmitting and receiving, receives a signal magnetic field from an external device, and generates electric power. The memory section stores one or more circuit parameters set in the voltage generation section and predetermined management information. The clock signal generation section is configured to be able to selectively generate clock signals of two or more different frequencies. The control section is configured to select the frequency of the clock signal supplied from the clock signal generation section to the memory section.

Patent Document 4 discloses a measuring device that measures a resonance frequency, a Q value, or both by bringing a detection coil close to each inlay of a plurality of RFID tags arranged on an insulating film. In the measuring device described in Patent Document 4, a non-magnetic metal plate is arranged so as to cover the inlay to be measured when viewed from the normal direction of the insulating film, and the non-magnetic metal plate allows the inlay to be measured to be It is characterized by suppressing mutual induction between an inlay and an adjacent inlay.

US Pat. No. 6,001,200 describes a structure of a semiconductor body having an integrated circuit including a signal part connected to a reference potential, and an antenna coupled to the integrated circuit via a contact surface arranged on a substrate and connected to the semiconductor body. A method for tuning an antenna resonant circuit of a passive transponder is disclosed, comprising: the antenna forming a series resonant circuit with an input capacitor of an integrated circuit, and in which operating energy is capacitively extracted from a high frequency electromagnetic carrier field. The method for tuning an antenna resonant circuit of a passive transponder described in Patent Document 5 reduces parasitic capacitive elements and resistive elements in a portion forming a current path between a contact surface and a reference potential, and improves the quality of the antenna resonant circuit. Features.

Patent Document 6 discloses a non-contact communication medium in which a loop antenna is formed using a conductor on one side of a substrate, and a communication circuit is mounted on the same side of the substrate. The contactless communication medium described in Patent Document 6 connects one end of a loop antenna to one antenna connection part of a communication circuit, and connects a first pad part, a second pad part, and a first pad part and a second pad part. When the arm section is folded, the other end of the loop antenna and the first pad section are in contact with each other, and the other end of the loop antenna and the second pad section are in contact with each other. It is characterized by being foldable so that the parts are in contact with each other.

International Publication No. 2019/198438 International Publication No. 2019/198527 International Publication No. 2019/176325 JP2003-331220A Japanese Patent Application Publication No. 2003-051759 Japanese Patent Application Publication No. 2004-265374

One embodiment of the technology of the present disclosure is a non-contact communication medium that can suppress variations in resonance frequency compared to a case where resonance is caused only by a capacitive load and a coil included in a single-chip arithmetic device. , a magnetic tape cartridge, and a method of manufacturing a contactless communication medium.

Another embodiment of the technology of the present disclosure provides a non-contact communication medium, a magnetic tape cartridge, and a non-contact communication medium that can change the Q value of a resonant circuit by using external capacitors with different characteristics. A manufacturing method is provided.

A first aspect of the technology of the present disclosure is an arithmetic device in which a capacitive load, a memory, and a processor that reads and writes to the memory are integrated into one chip, a coil, and an arithmetic device that are externally attached to the arithmetic device. A capacitor comprising: a capacitor that, together with a capacitive load and a coil, constitutes a resonant circuit that resonates at a predetermined resonant frequency when an external magnetic field applied from the outside acts; It is a contactless communication medium that operates using generated electricity.

A second aspect according to the technology of the present disclosure is a non-contact communication medium according to the first aspect, in which a capacitive load and a capacitor are connected in parallel to a coil.

A third aspect according to the technology of the present disclosure is the contactless communication medium according to the first aspect or the second aspect, in which the capacitance of the capacitor is determined based on the measured value of the capacitance of the capacitive load. .

A fourth aspect according to the technology of the present disclosure is any one of the first to third aspects, further comprising a substrate, and an arithmetic device and a capacitor are adhered to a specific surface of the substrate and are electrically connected. A contactless communication medium according to any one aspect.

A fifth aspect according to the technology of the present disclosure is the contactless communication medium according to the fourth aspect, in which the arithmetic device and the capacitor are sealed with a sealing material on a specific surface.

A sixth aspect of the technology of the present disclosure is the non-contact communication according to any one of the first to fifth aspects, wherein the arithmetic device and the capacitor are electrically connected by a wire connection method. It is a medium.

A seventh aspect according to the technology of the present disclosure is a non-contact type according to any one of the first to sixth aspects, wherein the arithmetic device is electrically connected to the coil by a flip-chip connection method. It is a communication medium.

An eighth aspect of the technology of the present disclosure is that the arithmetic device is a general-purpose type that can be used for purposes other than magnetic tape cartridges, and when a magnetic tape cartridge program is installed, the arithmetic device can be used as a magnetic tape cartridge arithmetic device. A non-contact communication medium according to any one of the first to seventh aspects that functions.

A ninth aspect according to the technology of the present disclosure is a magnetic tape cartridge comprising the non-contact communication medium according to any one of the first to eighth aspects, and a magnetic tape, The contactless communication medium has a second memory, the second memory being a magnetic tape cartridge storing information about the magnetic tape.

A tenth aspect of the technology of the present disclosure provides a processing circuit that is mounted on a substrate on which a coil that induces electric power is formed when an external magnetic field applied from the outside acts on the processing circuit, and that has a built-in capacitor. an external capacitor attached externally to the built-in capacitor, which together with the built-in capacitor and the coil constitutes a resonant circuit that resonates at a predetermined resonant frequency when an external magnetic field acts; The resonant circuit is a contactless communication medium having a Q value determined according to the characteristics of the external capacitor.

An eleventh aspect according to the technology of the present disclosure is the non-contact communication medium according to the tenth aspect, in which the Q value is determined according to the resistance component of the external capacitor in a specific frequency band.

A twelfth aspect according to the technology of the present disclosure is according to the tenth aspect or the eleventh aspect, in which the Q value is set to a value that realizes a communication distance longer than the reference communication distance by the contactless communication medium. It is a contactless communication medium.

A 13th aspect of the technology of the present disclosure is a 13th aspect of the present invention, in which the Q value is set to a value that achieves better communication stability than the reference communication stability by the non-contact communication medium. A non-contact communication medium according to any one of the aspects.

A fourteenth aspect of the technology of the present disclosure is that the Q value is determined based on the provisional Q value measured in a state where the external capacitor is not connected to the processing circuit and the processing circuit is connected to the coil. This is a non-contact communication medium according to any one of the tenth to thirteenth aspects defined.

A fifteenth aspect of the technology of the present disclosure is a reference Q value and a temporary Q value measured in a state where an external capacitor is not connected to the processing circuit and a state where the processing circuit is connected to the coil. The non-contact communication medium according to any one of the tenth to fourteenth aspects, wherein the characteristics of the external capacitor are determined based on the degree of difference.

A 16th aspect according to the technology of the present disclosure is the contactless communication medium according to any one of the 10th to 14th aspects, in which the processing circuit operates using electric power generated by the resonant circuit. It is.

A seventeenth aspect according to the technology of the present disclosure is the non-contact communication according to any one of the tenth to sixteenth aspects, wherein the built-in capacitor and the external capacitor are connected in parallel to the coil. It is a medium.

An 18th aspect according to the technology of the present disclosure is a non-conventional device according to any one of the 10th to 17th aspects, wherein the capacitance of the external capacitor is determined based on the measured value of the capacitance of the built-in capacitor. It is a contact communication medium.

A nineteenth aspect according to the technology of the present disclosure is any one of the tenth to eighteenth aspects, wherein the processing circuit and the external capacitor are bonded to a specific surface of the substrate and are electrically connected. 1 is a non-contact communication medium according to an embodiment.

A 20th aspect according to the technology of the present disclosure is the non-contact communication medium according to the 19th aspect, in which the processing circuit and the external capacitor are sealed with a sealing material on a specific surface.

A twenty-first aspect according to the technology of the present disclosure is a non-contact type according to any one of the tenth to twentieth aspects, wherein the processing circuit and the external capacitor are electrically connected by a wire connection method. It is a communication medium.

A twenty-second aspect according to the technology of the present disclosure is a non-contact type according to any one of the tenth to twenty-first aspects, wherein the processing circuit is electrically connected to the coil by a flip-chip connection method. It is a communication medium.

A twenty-third aspect of the technology of the present disclosure is that the processing circuit is of a general-purpose type that can be used for purposes other than magnetic tape cartridges, and when a program for magnetic tape cartridges is installed, it can be used as an arithmetic device for magnetic tape cartridges. It is a non-contact communication medium according to any one of the tenth to twenty-second aspects that functions.

A twenty-fourth aspect according to the technology of the present disclosure is a magnetic tape cartridge comprising the non-contact communication medium according to any one of the tenth to twenty-third aspects, and a magnetic tape, The non-contact communication medium has a memory, and the memory is a magnetic tape cartridge that stores information about the magnetic tape.

A twenty-fifth aspect of the technology of the present disclosure provides a processing circuit that is mounted on a substrate on which a coil is formed that induces electric power when an external magnetic field applied from the outside acts on the processing circuit, and that has a built-in capacitor. A non-contact communication medium comprising: an external capacitor attached externally to the device, which together with a built-in capacitor and a coil constitutes a resonant circuit that resonates at a predetermined resonant frequency when an external magnetic field acts on the external capacitor; The manufacturing method includes a Q value determination step for determining the Q value of a resonant circuit when an external capacitor is connected in parallel to the built-in capacitor, and a Q value determination step for determining the Q value of a resonant circuit when the external capacitor is connected in parallel to the built-in capacitor. An external capacitor formation process in which an external capacitor is formed under the condition that the Q value of the resonant circuit becomes the Q value determined in the Q value determination process, and the external capacitor formed in the external capacitor formation process is connected in parallel to the built-in capacitor. A method of manufacturing a non-contact communication medium includes a connecting step of connecting the method.

A twenty-sixth aspect of the technology of the present disclosure is that when the condition is that the external capacitor is connected in parallel to the built-in capacitor, the Q value of the resonant circuit is determined by the Q value determining step in a specific frequency band. The method for manufacturing a non-contact communication medium according to the twenty-fifth aspect, wherein the non-contact communication medium has a resistance component having a Q value.

A twenty-seventh aspect according to the technology of the present disclosure is the twenty-fifth aspect or the twenty-seventh aspect, wherein the Q value determined by the Q value determining step is a value that realizes a communication distance longer than the reference communication distance by the non-contact communication medium. 26 is a method for manufacturing a non-contact communication medium according to aspect 26.

A twenty-eighth aspect of the technology of the present disclosure is a twenty-fifth aspect in which the Q value determined in the Q value determining step is a value that realizes better communication stability than the reference communication stability by the non-contact communication medium. A method of manufacturing a non-contact communication medium according to any one of the twenty-seventh aspects.

A twenty-ninth aspect of the technology of the present disclosure is that in the Q value determining step, the provisional Q value is measured in a state where the external capacitor is not connected to the processing circuit and the processing circuit is connected to the coil. A method for manufacturing a non-contact communication medium according to any one of the twenty-fifth to twenty-eighth aspects, in which the Q value of the resonant circuit is determined based on the following.

A 30th aspect of the technology of the present disclosure is that the Q value determining step is performed by measuring the reference Q value in a state in which the external capacitor is not connected to the processing circuit and in a state in which the processing circuit is connected to the coil. The method for manufacturing a non-contact communication medium according to any one of the twenty-fifth to twenty-ninth aspects, wherein the characteristics of the external capacitor are determined based on the degree of difference from the tentative Q value obtained.

FIG. 1 is a schematic perspective view showing an example of the appearance of a magnetic tape cartridge according to first and second embodiments. FIG. 2 is a schematic perspective view showing an example of the structure of the inner right rear end portion of the lower case of the magnetic tape cartridge according to the first and second embodiments. FIG. 3 is a side sectional view showing an example of a support member provided on the inner surface of the lower case of the magnetic tape cartridge according to the first and second embodiments. 1 is a schematic configuration diagram showing an example of the hardware configuration of a magnetic tape drive according to first and second embodiments; FIG. FIG. 2 is a schematic perspective view showing an example of a mode in which a magnetic field is emitted from the bottom side of the magnetic tape cartridge according to the first and second embodiments by the non-contact reading/writing device. FIG. 2 is a conceptual diagram showing an example of a mode in which a magnetic field is applied from a non-contact read/write device to a cartridge memory in a magnetic tape cartridge according to the first and second embodiments. FIG. 3 is a schematic bottom view showing an example of the structure of the back surface of the substrate of the cartridge memory in the magnetic tape cartridge according to the first and second embodiments. FIG. 3 is a schematic plan view showing an example of the structure of the surface of the substrate of the cartridge memory in the magnetic tape cartridge according to the first and second embodiments. FIG. 2 is a schematic circuit diagram showing an example of a circuit configuration of a cartridge memory in the magnetic tape cartridge according to the first embodiment. FIG. 2 is a block diagram illustrating an example of the hardware configuration of a computer including an IC chip mounted in a cartridge memory in a magnetic tape cartridge according to the first embodiment. FIG. 3 is a conceptual diagram showing an example of the processing contents of an operation mode setting process executed by the CPU of the cartridge memory in the magnetic tape cartridge according to the first embodiment. 7 is a flowchart illustrating an example of the flow of operation mode setting processing according to the first embodiment. This is a continuation of the flowchart shown in FIG. 12A. This is a continuation of the flowchart shown in FIG. 12B. It is a flowchart which shows the 1st modification of the flow of the operation mode setting process based on 1st Embodiment. It is a flowchart which shows the 2nd modification of the flow of the operation mode setting process based on 1st Embodiment. It is a flowchart which shows the 3rd modification of the flow of the operation mode setting process based on 1st Embodiment. It is a flowchart which shows the 4th modification of the flow of the operation mode setting process based on 1st Embodiment. It is a graph which shows an example of the frequency characteristic of the resonance signal induced in the resonance circuit based on 2nd Embodiment. 7 is a graph showing an example of frequency characteristics of a resonance signal induced in a resonance circuit having a high Q value and a resonance signal induced in a resonance circuit having a low Q value. FIG. 7 is a circuit diagram showing an example of a resonant circuit according to a second embodiment, which is simplified in consideration of resistance components and combined capacitance of a coil, a built-in capacitor, and an external capacitor. FIG. 7 is a schematic circuit diagram showing an example of a circuit configuration of a cartridge memory in a magnetic tape cartridge according to a second embodiment. FIG. 7 is an explanatory diagram showing an example of a mode in which different external capacitors are selected according to a reference Q value in the cartridge memory according to the second embodiment. FIG. 7 is an explanatory diagram showing an example of a manner in which a Q value is determined according to a provisional Q value in a cartridge memory according to a second embodiment. FIG. 7 is an explanatory diagram showing an example of a mode in which an external capacitor formed based on a reference Q value and a temporary Q value is connected to a resonant circuit in the cartridge memory according to the second embodiment. It is a flow chart which shows an example of a resonant circuit manufacturing process concerning a 2nd embodiment. FIG. 7 is a schematic circuit diagram showing a first modification of the circuit configuration of the cartridge memory in the magnetic tape cartridge according to the second embodiment. FIG. 7 is a schematic plan view showing an example of the structure of the surface of a substrate of a cartridge memory according to a first modification of the second embodiment. FIG. 7 is a schematic plan view showing another example of the structure of the surface of the substrate of the cartridge memory according to the first modification of the second embodiment. 28 is a schematic cross-sectional view taken along line AA of the schematic plan view shown in FIG. 27. FIG. FIG. 3 is a schematic plan view of a cartridge memory in a magnetic tape cartridge, and is a schematic plan view showing a modified example of a connection form between a coil and an IC chip. FIG. 6 is a conceptual diagram showing a modification of the inclination angle of the cartridge memory in the magnetic tape cartridge. FIG. 3 is a conceptual diagram showing an example of a mode in which a magnetic field is applied to packages of a plurality of magnetic tape cartridges. FIG. 2 is a block diagram illustrating an example of a manner in which an operation mode setting processing program is installed in a computer from a storage medium in which the operation mode setting processing program is stored.

First, the words used in the following explanation will be explained.

CPU is an abbreviation for "Central Processing Unit." RAM is an abbreviation for "Random Access Memory." NVM is an abbreviation for "Non-Volatile Memory." ROM is an abbreviation for "Read Only Memory." EEPROM is an abbreviation for "Electrically Erasable and Programmable Read Only Memory." SSD is an abbreviation for "Solid State Drive." USB is an abbreviation for "Universal Serial Bus." ASIC is an abbreviation for "Application Specific Integrated Circuit." PLD is an abbreviation for "Programmable Logic Device." FPGA is an abbreviation for "Field-Programmable Gate Array." SoC is an abbreviation for "System-on-a-chip." IC is an abbreviation for "Integrated circuit." RFID is an abbreviation for "radio frequency identifier." LTO is an abbreviation for "Linear Tape-Open."

In the following description, for convenience of explanation, the direction in which the magnetic tape cartridge 10 is loaded into the magnetic tape drive 30 (see FIG. 4) is indicated by arrow A in FIG. The front side of the magnetic tape cartridge 10 is referred to as the front side of the magnetic tape cartridge 10. In the following structural description, "front" refers to the front side of the magnetic tape cartridge 10.

In the following description, for convenience of explanation, the direction of arrow B perpendicular to the direction of arrow A in FIG. In the following structural description, "right" refers to the right side of the magnetic tape cartridge 10.

In the following description, for convenience of explanation, the direction perpendicular to the arrow A direction and the arrow B direction in FIG. The upward side is the upper side of the magnetic tape cartridge 10. In the following description, in the following structural description, "upper" refers to the upper side of the magnetic tape cartridge 10.

In the following description, for convenience of explanation, the direction opposite to the front direction of the magnetic tape cartridge 10 in FIG. 10 on the rear side. In the following structural description, "rear" refers to the rear side of the magnetic tape cartridge 10.

In the following description, for convenience of explanation, the direction opposite to the upward direction of the magnetic tape cartridge 10 in FIG. The lower side of In the following structural description, "lower" refers to the lower side of the magnetic tape cartridge 10.

In the following description, LTO will be used as an example of the specifications of the magnetic tape cartridge 10. In addition, in the following explanation, it is assumed that the specifications shown in Table 1 below are applied to the LTO according to the technology of the present disclosure, but this is just an example, and the IBM3592 magnetic tape It may be based on the specifications of the cartridge.

In Table 1, "REQA to SELCET series" means polling commands described later. The "REQA to SELCET system" includes at least the command "Request A", the command "Request SN", and the command "Select". “Request A” is a command that inquires of the cartridge memory as to what type of cartridge memory it is. In this embodiment, there is one type of "Request A", but the number is not limited to this, and there may be multiple types. “Request SN” is a command to inquire about the serial number of the cartridge memory. “Select” is a command that foretells preparation for reading and writing to the cartridge memory. The READ system is a command corresponding to a read command described later. The WRITE type is a command corresponding to a write command described later.

[First embodiment]
As an example, as shown in FIG. 1, a magnetic tape cartridge 10 is substantially rectangular in plan view and includes a box-shaped case 12. As shown in FIG. The case 12 is made of resin such as polycarbonate, and includes an upper case 14 and a lower case 16. The upper case 14 and the lower case 16 are joined by welding (for example, ultrasonic welding) and screwing, with the lower peripheral surface of the upper case 14 and the upper peripheral surface of the lower case 16 in contact with each other. The joining method is not limited to welding and screwing, but may be other joining methods.

A cartridge reel 18 is rotatably housed inside the case 12. The cartridge reel 18 includes a reel hub 18A, an upper flange 18B1, and a lower flange 18B2. The reel hub 18A is formed into a cylindrical shape. The reel hub 18A is the axial center of the cartridge reel 18, the axial direction thereof is along the vertical direction of the case 12, and the reel hub 18A is disposed at the center of the case 12. Each of the upper flange 18B1 and the lower flange 18B2 is formed in an annular shape. A central portion of an upper flange 18B1 in plan view is fixed to the upper end of the reel hub 18A, and a central portion of a lower flange 18B2 in plan view is fixed to the lower end of the reel hub 18A. A magnetic tape MT is wound around the outer peripheral surface of the reel hub 18A, and widthwise ends of the magnetic tape MT are held by an upper flange 18B1 and a lower flange 18B2. Note that the reel hub 18A and the lower flange 18B2 may be integrally molded.

An opening 12B is formed in the front side of the right wall 12A of the case 12. The magnetic tape MT is pulled out from the opening 12B.

As an example, as shown in FIG. 2, a cartridge memory 19 is housed in the right rear end of the lower case 16. The cartridge memory 19 is an example of a "non-contact communication medium" according to the technology of the present disclosure. In this embodiment, a so-called passive RFID tag is employed as the cartridge memory 19.

The cartridge memory 19 stores management information 100 (see FIG. 10). The management information 100 is information for managing the magnetic tape cartridge 10, and is an example of "information regarding magnetic tape" according to the technology of the present disclosure. The management information 100 includes, for example, identification information that can identify the magnetic tape cartridge 10, the recording capacity of the magnetic tape MT, a summary of information recorded on the magnetic tape MT (hereinafter also referred to as "recorded information"), and recorded information. and information indicating the recording format of recorded information.

The cartridge memory 19 communicates with an external device (not shown) in a non-contact manner. External devices include, for example, a read/write device used in the production process of the magnetic tape cartridge 10, and a read/write device used in a magnetic tape drive (for example, the magnetic tape drive 30 shown in FIG. 4) (for example, the read/write device shown in FIG. - Non-contact reading/writing device 50) shown in FIG.

The external device reads and writes various information to and from the cartridge memory 19 in a non-contact manner. As will be described in detail later, the cartridge memory 19 generates electric power by electromagnetically acting on a magnetic field applied from an external device. The cartridge memory 19 operates using the generated electric power and communicates with the external device via a magnetic field, thereby exchanging various information with the external device. Note that the communication method may be, for example, a method based on a known standard such as ISO14443 or ISO18092, or may be a method based on the LTO specification of ECMA319.

As an example, as shown in FIG. 2, a support member 20 is provided on the inner surface of the bottom plate 16A at the right rear end of the lower case 16. The support members 20 are a pair of inclined tables that support the cartridge memory 19 from below in an inclined state. The pair of ramps is a first ramp 20A and a second ramp 20B. The first inclined table 20A and the second inclined table 20B are arranged at intervals in the left-right direction of the case 12, and are integrated with the inner surface of the rear wall 16B and the inner surface of the bottom plate 16A of the lower case 16. The first inclined table 20A has an inclined surface 20A1, and the inclined surface 20A1 is inclined downward from the inner surface of the rear wall 16B toward the inner surface of the bottom plate 16A. Further, the inclined surface 20B1 is also inclined downward from the inner surface of the rear wall 16B toward the inner surface of the bottom plate 16A.

On the front side of the support member 20, a pair of position regulating ribs 22 are arranged at intervals in the left-right direction. A pair of position regulating ribs 22 are provided upright on the inner surface of the bottom plate 16A, and regulate the position of the lower end of the cartridge memory 19 placed on the support member 20.

As an example, as shown in FIG. 3, a reference surface 16A1 is formed on the outer surface of the bottom plate 16A. The reference surface 16A1 is a plane. Here, the plane refers to a plane parallel to a horizontal plane when the lower case 16 is placed on a horizontal plane with the bottom plate 16A facing downward. The inclination angle θ of the support member 20, that is, the inclination angle of the inclined surface 20A1 and the inclined surface 20B1, is 45 degrees with respect to the reference surface 16A1. Note that 45 degrees is just an example, and may be "0 degrees < inclination angle θ < 45 degrees" or may be 45 degrees or more.

The cartridge memory 19 includes a substrate 26. The substrate 26 is an example of a "substrate" according to the technology of the present disclosure. The substrate 26 is placed on the support member 20 with the back surface 26A of the substrate 26 facing downward, and the support member 20 supports the back surface 26A of the substrate 26 from below. A portion of the back surface 26A of the substrate 26 is in contact with the inclined surfaces of the support member 20, that is, the inclined surfaces 20A1 and 20B1, and the front surface 26B of the substrate 26 is an example of a "specific surface" according to the technology of the present disclosure. It is exposed on the inner surface 14A1 side of the top plate 14A. Although the surface 26B is mentioned here as an example of the "specific surface" according to the technology of the present disclosure, the technology of the present disclosure is not limited to this, and the surface 26B is an example of the "specific surface" according to the technology of the present disclosure. The back surface 26A may be used as the back surface 26A.

The upper case 14 includes a plurality of ribs 24. The plurality of ribs 24 are arranged at intervals in the left-right direction of the case 12. The plurality of ribs 24 protrude downward from the inner surface 14A1 of the top plate 14A of the upper case 14, and the tip end surface 24A of each rib 24 has an inclined surface corresponding to the inclined surfaces 20A1 and 20B1. That is, the tip surface 24A of each rib 24 is inclined at 45 degrees with respect to the reference surface 16A1.

When the upper case 14 is joined to the lower case 16 as described above with the cartridge memory 19 disposed on the support member 20, the tip surface 24A of each rib 24 comes into contact with the substrate 26 from the surface 26B side. However, the substrate 26 is sandwiched between the tip surface 24A of each rib 24 and the inclined surface of the support member 20. As a result, the vertical position of the cartridge memory 19 is regulated by the ribs 24.

As an example, as shown in FIG. 4, a magnetic tape drive 30 includes a transport device 34, a read head 36, and a control device 38. The magnetic tape cartridge 10 is loaded into the magnetic tape drive 30. The magnetic tape drive 30 is a device that extracts the magnetic tape MT from the magnetic tape cartridge 10 and reads recorded information from the extracted magnetic tape MT using a read head 36 in a linear serpentine method. Note that in this embodiment, reading recorded information refers to reproduction of recorded information in other words.

The control device 38 controls the entire magnetic tape drive 30. In this embodiment, the control device 38 is realized by an ASIC, but the technology of the present disclosure is not limited to this. For example, the control device 38 may be realized by an FPGA. Further, the control device 38 may be realized by a computer including a CPU, ROM, and RAM. Further, it may be realized by combining two or more of AISC, FPGA, and computer. That is, the control device 38 may be realized by a combination of a hardware configuration and a software configuration.

The conveyance device 34 is a device that selectively conveys the magnetic tape MT in the forward direction and the reverse direction, and includes a delivery motor 40, a take-up reel 42, a take-up motor 44, a plurality of guide rollers GR, and a control device 38. ing.

The feed motor 40 rotates the cartridge reel 18 within the magnetic tape cartridge 10 under the control of the control device 38 . The control device 38 controls the rotational direction, rotational speed, rotational torque, etc. of the cartridge reel 18 by controlling the delivery motor 40 .

The take-up motor 44 rotates the take-up reel 42 under the control of the control device 38 . The control device 38 controls the rotation direction, rotation speed, rotation torque, etc. of the take-up reel 42 by controlling the take-up motor 44 .

When the magnetic tape MT is taken up by the take-up reel 42, the control device 38 rotates the feed motor 40 and the take-up motor 44 so as to run the magnetic tape MT in the forward direction. The rotational speed, rotational torque, etc. of the delivery motor 40 and the take-up motor 44 are adjusted according to the speed of the magnetic tape MT being wound by the take-up reel 42.

When the magnetic tape MT is rewound onto the cartridge reel 18, the control device 38 rotates the feed motor 40 and the take-up motor 44 so as to run the magnetic tape MT in the opposite direction. The rotational speed, rotational torque, etc. of the delivery motor 40 and the take-up motor 44 are adjusted according to the speed of the magnetic tape MT being wound by the take-up reel 42.

By adjusting the rotational speed, rotational torque, etc. of each of the delivery motor 40 and the take-up motor 44 in this manner, tension within a predetermined range is applied to the magnetic tape MT. Here, "within a predetermined range" refers to, for example, a tension range obtained through computer simulation and/or testing using an actual machine, as a tension range in which data can be read from the magnetic tape MT by the read head 36.

In this embodiment, the tension of the magnetic tape MT is controlled by controlling the rotational speed, rotational torque, etc. of the delivery motor 40 and the take-up motor 44, but the technology of the present disclosure is not limited to this. For example, the tension of the magnetic tape MT may be controlled using a dancer roller or by drawing the magnetic tape MT into a vacuum chamber.

Each of the plurality of guide rollers GR is a roller that guides the magnetic tape MT. The travel path of the magnetic tape MT is determined by a plurality of guide rollers GR being separately arranged at positions straddling the reading head 36 between the magnetic tape cartridge 10 and the take-up reel 42.

The reading head 36 includes a reading element 46 and a holder 48. The reading element 46 is held by a holder 48 so as to be in contact with the running magnetic tape MT, and reads recorded information from the magnetic tape MT transported by the transport device 34.

The magnetic tape drive 30 includes a non-contact reading/writing device 50. The non-contact reading/writing device 50 is an example of the "external" according to the technology of the present disclosure. The non-contact read/write device 50 is disposed below the magnetic tape cartridge 10 loaded with the magnetic tape cartridge 10 so as to directly face the back surface 26A of the cartridge memory 19. Note that the state in which the magnetic tape cartridge 10 is loaded into the magnetic tape drive 30 means, for example, that the magnetic tape cartridge 10 is at a predetermined position where the reading head 36 starts reading recorded information from the magnetic tape MT. Refers to the state reached.

As an example, as shown in FIG. 5, the non-contact read/write device 50 emits a magnetic field MF from the underside of the magnetic tape cartridge 10 toward the cartridge memory 19. The magnetic field MF penetrates the cartridge memory 19. Note that the magnetic field MF is an example of an "external magnetic field" according to the technology of the present disclosure.

As an example, as shown in FIG. 6, a non-contact reading/writing device 50 is connected to a control device 38. The control device 38 outputs a control signal for controlling the cartridge memory 19 to the non-contact reading/writing device 50 . The non-contact reading/writing device 50 emits a magnetic field MF toward the cartridge memory 19 according to a control signal input from the control device 38 . The magnetic field MF penetrates from the back surface 26A side of the cartridge memory 19 to the front surface 26B side.

The non-contact read/write device 50 spatially transmits command signals to the cartridge memory 19 under the control of the controller 38 . As will be described in detail later, the command signal is a signal indicating a command to the cartridge memory 19. When a command signal is spatially transmitted from the non-contact reading/writing device 50 to the cartridge memory 19, the magnetic field MF includes the command signal by the non-contact reading/writing device 50 according to instructions from the control device 38. In other words, the command signal is superimposed on the magnetic field MF. That is, the non-contact reading/writing device 50 transmits a command signal to the cartridge memory 19 via the magnetic field MF under the control of the control device 38.

An IC chip 52 and an external capacitor 54 are mounted on the surface 26B of the cartridge memory 19. IC chip 52 and external capacitor 54 are adhered to surface 26B. Further, on the surface 26B of the cartridge memory 19, the IC chip 52 and the external capacitor 54 are sealed with a sealing material 56. Here, as the sealing material 56, an ultraviolet curing resin that cures in response to ultraviolet light is used. Note that the ultraviolet curing resin is just one example, and a photocuring resin that reacts to light in a wavelength range other than ultraviolet rays may be used as the encapsulant 56, or a thermosetting resin may be used as the encapsulant. Alternatively, an adhesive may be used as the sealant 56. Note that the IC chip 52 is an example of a "processing circuit" according to the technology of the present disclosure. The capacitor is an example of an "external capacitor" according to the technology of the present disclosure. Further, the sealing material 56 is an example of a "sealing material" according to the technology of the present disclosure.

As an example, as shown in FIG. 7, a coil 60 is formed in a loop shape on the back surface 26A of the cartridge memory 19. Here, copper foil is used as the material for the coil 60. Copper foil is just one example, and other types of conductive materials such as aluminum foil may also be used. The coil 60 induces an induced current when a magnetic field MF (see FIGS. 5 and 6) applied from the non-contact reading/writing device 50 acts on the coil 60. Note that the coil 60 is an example of a "coil" according to the technology of the present disclosure.

A first conductive portion 62A and a second conductive portion 62B are provided on the back surface 26A of the cartridge memory 19. The first conductive portion 62A and the second conductive portion 62B have solder, and are connected to the IC chip 52 (see FIGS. 6 and 8) and the external capacitor 54 (see FIGS. 6 and 8) on the surface 26B. Both ends of 60 are electrically connected.

As an example, as shown in FIG. 8, on the surface 26B of the cartridge memory 19, the IC chip 52 and the external capacitor 54 are electrically connected to each other by a wire connection method. Specifically, one terminal of the positive terminal and negative terminal of the IC chip 52 is connected to the first conductive portion 62A via the wiring 64A, and the other terminal is connected to the second conductive portion via the wiring 64B. 62B. Further, the external capacitor 54 has a pair of electrodes. In the example shown in FIG. 8, the pair of electrodes are electrodes 54A and 54B. The electrode 54A is connected to the first conducting part 62A via a wiring 64C, and the electrode 54B is connected to the second conducting part 62B via a wiring 64D. Thereby, the IC chip 52 and the external capacitor 54 are connected in parallel to the coil 60.

As an example, as shown in FIG. 9, the IC chip 52 includes a built-in capacitor 80, a power supply circuit 82, a computer 84, a clock signal generator 86, a signal processing circuit 88, and a magnetic field strength measuring circuit 90. The IC chip 52 is a general-purpose IC chip that can be used for purposes other than the magnetic tape cartridge 10, and functions as an arithmetic unit for the magnetic tape cartridge by installing a program for the magnetic tape cartridge. Note that an example of the magnetic tape cartridge program is an operation mode setting processing program 102, which will be described later. Furthermore, the built-in capacitor 80 is an example of a "built-in capacitor" according to the technology of the present disclosure.

The cartridge memory 19 also includes a power generator 70 . The power generator 70 generates power by the magnetic field MF applied from the non-contact reading/writing device 50 acting on the coil 60 . Specifically, the power generator 70 generates AC power using the resonant circuit 92, converts the generated AC power into DC power, and outputs the DC power. Note that the resonant circuit 92 is an example of a "resonant circuit" according to the technology of the present disclosure.

Power generator 70 has a resonant circuit 92 and a power supply circuit 82. The resonant circuit 92 includes an external capacitor 54, a coil 60, and a built-in capacitor 80. Built-in capacitor 80 is an example of a "capacitive load" according to the technology of the present disclosure. The built-in capacitor 80 is a capacitor built into the IC chip 52, and the power supply circuit 82 is also a circuit built into the IC chip 52. Built-in capacitor 80 is connected in parallel to coil 60. Further, the built-in capacitor 80 is connected in parallel to the external capacitor 54.

The external capacitor 54 is a capacitor attached externally to the IC chip 52. The IC chip 52 is originally a general-purpose IC chip that can be used for purposes other than the magnetic tape cartridge 10. Therefore, the capacity of the built-in capacitor 80 may be insufficient to realize the resonant frequency required by the cartridge memory 19 used in the magnetic tape cartridge 10. Therefore, in the cartridge memory 19, an external capacitor 54 is retrofitted to the IC chip 52 as a capacitor having a capacitance value necessary for causing the resonant circuit 92 to resonate at a predetermined resonant frequency by the action of the magnetic field MF. ing. Note that the frequency corresponding to the predetermined resonance frequency is, for example, 13.56 MHz, and may be determined as appropriate based on the specifications of the cartridge memory 19 and/or the non-contact reading/writing device 50. Further, the capacitance of the external capacitor 54 is determined based on the actually measured value of the capacitance of the built-in capacitor 80. Note that 13.56 MHz is an example of a "predetermined resonance frequency" and a "specific frequency band" according to the technology of the present disclosure.

The resonant circuit 92 generates AC power by generating a resonance phenomenon of a predetermined resonance frequency using an induced current induced by the coil 60 when the magnetic field MF passes through the coil 60. Power is output to the power supply circuit 82.

The power supply circuit 82 includes a rectifier circuit, a smoothing circuit, and the like. The rectifier circuit is a full wave rectifier circuit having multiple diodes. The full-wave rectifier circuit is just an example, and a half-wave rectifier circuit may also be used. The smoothing circuit includes a capacitor and a resistor. The power supply circuit 82 converts the AC power input from the resonance circuit 92 into DC power, and supplies the DC power obtained by the conversion (hereinafter also simply referred to as "power") to various driving elements in the IC chip 52. do. The various driving elements include a computer 84, a clock signal generator 86, a signal processing circuit 88, and a magnetic field strength measurement circuit 90. In this manner, the power generator 70 supplies power to the various driving elements within the IC chip 52, so that the IC chip 52 operates using the power generated by the power generator 70.

Computer 84 controls cartridge memory 19 as a whole. The computer 84 holds management information 100 (see FIG. 10).

A clock signal generator 86 generates a clock signal and outputs it to various driving elements. The various drive elements operate according to clock signals input from the clock signal generator 86. As will be described in detail later, the clock signal generator 86 changes the frequency of the clock signal (hereinafter also referred to as "clock frequency") according to instructions from the computer 84. The clock signal generator 86 uses the same frequency as the frequency of the magnetic field MF as a reference clock frequency (hereinafter referred to as "reference clock frequency"), and generates a clock signal with a different clock frequency based on the reference clock frequency. is generated. In this embodiment, the clock signal generator 86 selectively generates clock signals of the first to third frequencies. The first frequency is twice the reference clock frequency, the second frequency is the same frequency as the reference clock frequency, and the third frequency is 1/2 the reference clock frequency (Figure 11 reference).

Signal processing circuit 88 is connected to resonant circuit 92 . The signal processing circuit 88 includes a decoding circuit (not shown) and an encoding circuit (not shown). The decoding circuit of the signal processing circuit 88 extracts and decodes a command signal from the magnetic field MF received by the coil 60 and outputs it to the computer 84 . Computer 84 outputs a response signal to the command signal to signal processing circuit 88 . That is, the computer 84 executes processing according to the command signal input from the signal processing circuit 88, and outputs the processing result to the signal processing circuit 88 as a response signal. In the signal processing circuit 88 , when the response signal is input from the computer 84 , the encoding circuit of the signal processing circuit 88 encodes and modulates the response signal and outputs it to the resonance circuit 92 . The resonant circuit 92 transmits the response signal input from the encoding circuit of the signal processing circuit 88 to the non-contact reading/writing device 50 via the magnetic field MF. That is, when a response signal is transmitted from the cartridge memory 19 to the non-contact type reading/writing device 50, the response signal is included in the magnetic field MF. In other words, the response signal is superimposed on the magnetic field MF.

The magnetic field strength measurement circuit 90 measures the strength of the magnetic field MF based on the power generated by the power supply circuit 82. The power generated by the power supply circuit 82 increases within a limited range as the strength of the magnetic field MF applied to the resonant circuit 92 increases. The magnetic field strength measurement circuit 90 outputs a signal with an output level corresponding to the power generated by the power supply circuit 82 based on the correlation between the power generated by the power supply circuit 82 and the strength of the magnetic field MF given to the resonance circuit 92. do. That is, the magnetic field strength measuring circuit 90 measures the electric power generated by the power supply circuit 82, generates a magnetic field strength signal indicating the strength of the magnetic field MF based on the measurement result, and outputs it to the computer 84. This allows the computer 84 to execute processing according to the magnetic field strength signal input from the magnetic field strength measuring circuit 90.

As shown in FIG. 10 as an example, the computer 84 includes a CPU 94, an NVM 96, and a RAM 98. CPU 94 , NVM 96 , and RAM 98 are connected to bus 99 . Also connected to the bus 99 are a clock signal generator 86 , a signal processing circuit 88 , and a magnetic field strength measuring circuit 90 .

The NVM 96 is an example of a "memory" according to the technology of the present disclosure. Here, an EEPROM is employed as the NVM96. The EEPROM is just one example; for example, a ferroelectric memory may be used instead of the EEPROM, and any nonvolatile memory that can be mounted on the IC chip 52 may be used.

Management information 100 is stored in the NVM 96. The CPU 94 selectively performs polling processing, reading processing, and writing processing in accordance with command signals input from the signal processing circuit 88 . The polling process is a process of establishing communication with the non-contact reading/writing device 50, and is performed, for example, as a preparatory process before the read process and the write process. The reading process is a process of reading the management information 100 and the like from the NVM 96. The write process is a process for writing the management information 100 and the like into the NVM 96. The polling process, the read process, and the write process (hereinafter referred to as "various processes" unless it is necessary to explain them separately) are all performed by the CPU 94 in accordance with the clock signal generated by the clock signal generator 86. That is, the CPU 94 performs various processes at a processing speed according to the clock frequency.

Therefore, the higher the clock frequency, the higher the processing speed. An increase in processing speed increases the load placed on the CPU 94 and increases power consumption. Furthermore, as the amount of information such as the management information 100 increases, the time taken for the CPU 94 to execute read processing and write processing becomes longer, and there is a possibility that the power supplied from the power supply circuit 82 to the CPU 94 etc. may become insufficient.

One reason for the increased load on the CPU 94 is the time required from the time the non-contact read/write device 50 completes sending a command signal to the cartridge memory 19 until the cartridge memory 19 starts sending a response signal in response to the command signal. One example of this is that the time (hereinafter also referred to as "response time") becomes shorter. The shorter the response time, the faster the cartridge memory 19 must operate, and the higher the clock frequency for processing, the greater the power consumption. It is generally known that there is a trade-off relationship between the response time and the maximum communication distance between the non-contact reading/writing device 50 and the cartridge memory 19.

In the cartridge memory 19, an operation mode setting process is executed by the CPU 94 in order to suppress an increase in power consumption. The operation mode setting process is a process for making the response time longer than a predetermined time as a standard response time. The operation mode setting process will be explained below.

The NVM 96 stores an operation mode setting processing program 102. The CPU 94 reads the operating mode setting processing program 102 from the NVM 96 and executes the operating mode setting processing program 102 on the RAM 98. The operation mode setting process is realized by the CPU 94 executing the operation mode setting process program 102.

As an example, as shown in FIG. 11, the CPU 94 sets the operation mode of the cartridge memory 19 (hereinafter also simply referred to as "operation mode") to the operation mode according to the command signal by executing the operation mode setting process. , set the clock frequency according to the operating mode. By changing the operation mode according to the command signal, the CPU 94 sets the processing time (hereinafter also simply referred to as "processing time") required from the start to the end of processing for a command (for example, one command) to a predetermined time. Make it longer than. In this way, the CPU 94 makes the above-mentioned response time longer than the time predetermined as the standard response time by making the processing time longer than the predetermined time. Then, the CPU 94 changes the clock frequency by setting the clock frequency according to the operation mode. Specifically, the CPU 94 lowers the clock frequency as the processing time becomes longer.

The operating mode is set according to a command indicated by a command signal input from the signal processing circuit 88 to the CPU 94. The command indicated by the command signal is a polling command, a read command, or a write command. If the command indicated by the command signal is a polling command, the CPU 94 executes a polling process, and if the command indicated by the command signal is a read command, the CPU 94 executes a read process and writes the command indicated by the command signal. In the case of a write command, the CPU 94 executes a write process. Here, for convenience of explanation, one type of signal is illustrated as the polling signal, but the polling signal may be a plurality of types of signals.

The CPU 94 adjusts the length of processing time by setting one of a long-time processing mode, a medium-time processing mode, and a short-time processing mode as the operation mode. The processing time is one of a long time, a medium time, and a short time. A long time refers to a time longer than a medium time, and a short time refers to a time shorter than a medium time. In the long-time processing mode, the time required for the CPU 94 to process a command is long; in the medium-time processing mode, the time required for the CPU 94 to process a command is medium; and in the short-time processing mode, the time required for the CPU 94 to process a command takes a long time. The time required is short.

In the example shown in FIG. 11, when the command indicated by the command signal is a polling command, the CPU 94 sets the short-time processing mode as the operation mode, and when the command indicated by the command signal is a write command, the CPU 94 sets the medium time processing mode, and when the command indicated by the command signal is a read command, the CPU 94 sets the long time processing mode.

When the short-time processing mode is set as the operation mode, the CPU 94 sets the first frequency as the clock frequency. That is, when the CPU 94 sets the short-time processing mode as the operation mode, the CPU 94 controls the clock signal generator 86 so that the clock signal generator 86 generates a clock signal of the first frequency.

When the CPU 94 sets the medium time processing mode as the operation mode, the CPU 94 sets the second frequency as the clock frequency. That is, when the CPU 94 sets the medium time processing mode as the operation mode, the CPU 94 controls the clock signal generator 86 so that the clock signal generator 86 generates a clock signal of the second frequency.

When the long-time processing mode is set as the operation mode, the CPU 94 sets the third frequency as the clock frequency. That is, when the CPU 94 sets the long-time processing mode as the operation mode, the CPU 94 controls the clock signal generator 86 so that the clock signal generator 86 generates a clock signal of the third frequency.

In this way, the operation mode is shifted from short-time processing mode to medium-time processing mode, or from medium-time processing mode to long-time processing mode, resulting in a correspondingly longer response time. Become.

Next, the operation of the cartridge memory 19 will be explained with reference to FIGS. 12A to 12C.

12A to 12C show an example of the flow of the operation mode setting process executed by the CPU 94. In the following explanation of the operation mode setting process, for convenience of explanation, it is assumed that power is supplied from the power supply circuit 82 to various driving elements. Furthermore, in the following explanation of the operation mode setting process, for convenience of explanation, it is assumed that the command indicated by the command signal is one of a polling command, a read command, or a write command. Furthermore, in the following explanation of the operation mode setting process, for convenience of explanation, it is assumed that the operation mode is set to a long-time processing mode, a medium-time processing mode, or a short-time processing mode.

In the operation mode setting process shown in FIG. 12A, first, in step ST12, the CPU 94 determines whether the signal processing circuit 88 has received a command signal. In step ST12, if the command signal is received by the signal processing circuit 88, the determination is affirmative and the operation mode setting process moves to step ST14. In step ST12, if the command signal is not received by the signal processing circuit 88, the determination is negative and the operation mode setting process moves to step ST26.

In step ST14, the CPU 94 determines whether the command indicated by the command signal received by the signal processing circuit 88 in step ST12 is a polling command. In step ST14, if the command indicated by the command signal received by the signal processing circuit 88 is not a polling command, the determination is negative and the operation mode setting process moves to step ST28 shown in FIG. 12B. In step ST14, if the command indicated by the command signal received by the signal processing circuit 88 is a polling command, the determination is affirmative and the operation mode setting process moves to step ST16.

In step ST16, the CPU 94 determines whether the currently set operating mode is the long-time processing mode or the medium-time processing mode. In step ST16, if the currently set operation mode is not the long-time processing mode or medium-time processing mode (if the currently set operation mode is the short-time processing mode), the determination is negative and the operation is not performed. The mode setting process moves to step ST22. In step ST16, if the currently set operation mode is the long-time processing mode or medium-time processing mode, the determination is affirmative and the operation mode setting process moves to step ST18.

In step ST18, the CPU 94 shifts the operation mode to short-time processing mode, and then the operation mode setting process shifts to step ST20.

In step ST20, the CPU 94 sets the clock frequency to the first frequency, and then the operation mode setting process moves to step ST22.

On the other hand, in step ST28 shown in FIG. 12B, the CPU 94 determines whether the command indicated by the command signal received by the signal processing circuit 88 in step ST12 is a write command. In step ST28, if the command indicated by the command signal received by the signal processing circuit 88 is not a write command (if the command indicated by the command signal received by the signal processing circuit 88 is a read command), the determination is made. If the answer is negative, the operation mode setting process moves to step ST36 shown in FIG. 12C. In step ST28, if the command indicated by the command signal received by the signal processing circuit 88 is a write command, the determination is affirmative and the operation mode setting process moves to step ST30.

In step ST30, the CPU 94 determines whether the currently set operating mode is the long-time processing mode or the short-time processing mode. In step ST30, if the currently set operation mode is not the long-time processing mode or the short-time processing mode (if the currently set operation mode is the medium-time processing mode), the determination is negative and the operation is not performed. The mode setting process moves to step ST22 shown in FIG. 12A. In step ST30, if the currently set operation mode is the long-time processing mode or the short-time processing mode, the determination is affirmative and the operation mode setting process moves to step ST32.

In step ST32, the CPU 94 shifts the operation mode to medium time processing mode, and then the operation mode setting process shifts to step ST34.

In step ST34, the CPU 94 sets the clock frequency to the second frequency, and then the operation mode setting process moves to step ST22 shown in FIG. 12A.

On the other hand, in step ST36 shown in FIG. 12C, the CPU 94 determines whether the currently set operating mode is the medium time processing mode or the short time processing mode. In step ST36, if the currently set operation mode is not medium time processing mode or short time processing mode (if the currently set operation mode is long time processing mode), the determination is negative and the operation is not performed. The mode setting process moves to step ST22 shown in FIG. 12A. In step ST36, if the currently set operation mode is medium time processing mode or short time processing mode, the determination is affirmative and the operation mode setting process moves to step ST38.

In step ST38, the CPU 94 shifts the operation mode to long-time processing mode, and then the operation mode setting process shifts to step ST40.

In step ST40, the CPU 94 sets the clock frequency to the third frequency, and then the operation mode setting process moves to step ST22 shown in FIG. 12A.

In step ST22 shown in FIG. 12A, the CPU 94 executes processing according to the command signal received by the signal processing circuit 88 in step ST12, and then the operation mode setting processing moves to step ST24.

In step ST24, the CPU 94 transmits a response signal indicating the processing result obtained by executing the processing in step ST22 to the signal processing circuit 88 and the resonance circuit 92 via the magnetic field MF to the non-contact reading/writing device. 50, and then the operation mode setting process moves to step ST26.

In step ST26, the CPU 94 determines whether conditions for terminating the operation mode setting process (hereinafter referred to as "operation mode setting process terminating condition") are satisfied. An example of the condition for terminating the operation mode setting process is that the magnetic field MF has disappeared. Whether or not the magnetic field MF has disappeared is determined by the CPU 94 based on the magnetic field strength signal input to the CPU 94 from the magnetic field strength measurement circuit 90. In step ST26, if the conditions for ending the operation mode setting process are not satisfied, the determination is negative and the operation mode setting process moves to step ST12. In step ST26, if the conditions for terminating the operation mode setting process are satisfied, the determination is affirmative and the operation mode setting process ends.

As described above, in the cartridge memory 19, the external capacitor 54 is externally attached to the IC chip 52. Further, the external capacitor 54 constitutes a resonant circuit 92 together with the built-in capacitor 80 and the coil 60, which resonates at a predetermined resonant frequency when the magnetic field MF acts on it. The IC chip 52 operates using DC power generated in accordance with the AC power generated by the resonant circuit 92. Therefore, according to this configuration, variations in the resonance frequency can be suppressed compared to the case where resonance is caused only by the coil 60 and the built-in capacitor 80 included in the IC chip 52 integrated into one chip. In addition, by retrofitting an external capacitor 54 to the IC chip 52, the amount of electricity stored in the cartridge memory 19 can be increased, and power is stably supplied, and the connection between the non-contact writing device 50 and the cartridge memory 19 can be increased. It is less likely that the power will run out while communication is taking place between the two. When power shortages become less likely, it becomes possible to extend the communication distance between the non-contact writing device 50 and the cartridge memory 19.

Further, the IC chip 52 operates using the power generated by the resonant circuit 92. Therefore, according to this configuration, it is not necessary to provide the cartridge memory 19 with a battery or the like in order to operate the IC chip 52.

Further, in the cartridge memory 19, the built-in capacitor 80 and the external capacitor 54 are connected in parallel to the coil 60. Therefore, according to this configuration, electric power can be generated by causing a resonance phenomenon by the built-in capacitor 80, the external capacitor 54, and the coil 60.

Further, in the cartridge memory 19, the capacitance of the external capacitor 54 is determined based on the actual measured value of the capacitance of the built-in capacitor 80. Therefore, according to this configuration, the capacitance of the external capacitor 54 required to obtain a predetermined resonance frequency can be reduced, compared to the case where the capacitance of the external capacitor 54 is determined without considering the actual measured value of the capacitance of the built-in capacitor 80. It can be determined with high precision.

Further, in the cartridge memory 19, an IC chip 52 and an external capacitor 54 are bonded to the surface 26B of the substrate 26 and are electrically connected. Therefore, according to this configuration, the positional relationship and electrical connection between the IC chip 52 and the external capacitor 54 can be maintained.

Further, in the cartridge memory 19, the IC chip 52 and the external capacitor 54 are sealed on the surface 26B of the substrate 26 with a sealing material 56. Therefore, according to this configuration, the IC chip 52 and the external capacitor 54 can be protected from dust and/or external stimuli (for example, light, moisture, impact, etc.).

Further, in the cartridge memory 19, the IC chip 52 and the external capacitor 54 are electrically connected by a wire connection method. Therefore, according to this configuration, the electrical connection between the IC chip 52 and the external capacitor 54 can be maintained.

In addition, in the cartridge memory 19, the IC chip 52 is a general-purpose IC chip that can be used for purposes other than the magnetic tape cartridge 10, and by installing the operation mode setting processing program 102 as a program for the magnetic tape cartridge, Functions as an arithmetic unit for tape cartridges. Therefore, according to this configuration, the manufacturing cost of the cartridge memory 19 can be reduced compared to the case where a calculation device for the magnetic tape cartridge 10 is manufactured without using a general-purpose type calculation device that can be used for purposes other than magnetic tape cartridges. It can be suppressed.

Further, the magnetic tape cartridge 10 includes a cartridge memory 19 and a magnetic tape MT. The cartridge memory 19 has an NVM 96, and the NVM 96 stores management information 100 regarding the magnetic tape MT. Therefore, according to this configuration, compared to the case where the management information 100 regarding the magnetic tape MT is stored in another computer that is not connected to the magnetic tape drive 30 or the non-contact reading/writing device 50, the management information 100 is can be easily managed by associating it with the magnetic tape cartridge 10.

In addition, although the said 1st Embodiment gave and demonstrated the example of the form in which the process of step ST12 is performed regardless of the intensity|strength of magnetic field MF in the operation mode setting process, the technique of this disclosure is not limited to this. For example, as shown in FIG. 13, in the operation mode setting process, the process of step ST10 may be executed before step ST12.

The operation mode setting process shown in FIG. 13 differs from the operation mode setting process shown in FIGS. 12A to 12C in that the clock signal of the first frequency has already been generated by the clock signal generator 86 in various ways. The difference is that it is supplied to the drive element. Further, the operation mode setting process shown in FIG. 13 differs from the operation mode setting process shown in FIGS. 12A to 12C in that it includes the process of step ST10.

In step ST10 shown in FIG. 13, the CPU 94 determines whether the strength of the magnetic field MF is less than a threshold value based on the magnetic field strength signal. Here, the threshold value is, for example, the lower limit value of the magnetic field strength at which power shortage will not occur even if read processing is performed using the clock signal of the first frequency, and is derived in advance through tests using actual equipment and/or computer simulations. It is a value.

In step ST10, if the strength of the magnetic field MF is equal to or greater than the threshold value, the determination is negative and the operation mode setting process moves to step ST26. In step ST10, if the strength of the magnetic field MF is less than the threshold value, the determination is affirmative and the operation mode setting process moves to step ST12. That is, when the strength of the magnetic field MF is equal to or higher than the threshold, the clock signal of the first frequency is maintained, and when the strength of the magnetic field MF is less than the threshold, the operation mode is changed according to the type of command indicated by the command signal. and the clock frequency is changed depending on the operating mode. Therefore, according to this configuration, it is possible to avoid an increase in processing time even when there is no possibility of power shortage occurring.

Further, in the example shown in FIG. 13, it is determined whether the strength of the magnetic field MF is less than the threshold value before step ST12, but the technology of the present disclosure is not limited to this. For example, as shown in FIG. 14, step ST15 may be inserted between step ST14 and step ST16.

In step ST15 shown in FIG. 14, the same determination as the process in step ST10 described above is performed. Then, in step ST15, if the strength of the magnetic field MF is equal to or greater than the threshold value, the determination is negative and the operation mode setting process moves to step ST26. In step ST15, if the strength of the magnetic field MF is less than the threshold value, the determination is affirmative and the operation mode setting process moves to step ST16.

Further, the operation mode setting process described in the first embodiment is merely an example, and the technology of the present disclosure is not limited thereto. For example, instead of the operation mode setting process shown in FIG. 12B, the operation mode setting process shown in FIG. 15 may be executed by the CPU 94. The operation mode setting process shown in FIG. 15 differs from the operation mode setting process shown in FIG. 12B in that it includes the process of step ST29.

In step ST29 shown in FIG. 15, the CPU 94 determines whether the strength of the magnetic field MF is less than a threshold value based on the magnetic field strength signal. In step ST29, if the strength of the magnetic field MF is equal to or greater than the threshold value, the determination is negative and the operation mode setting process moves to step ST22 shown in FIG. 12A. In step ST29, if the strength of the magnetic field MF is less than the threshold value, the determination is affirmative and the operation mode setting process moves to step ST30.

Further, the operation mode setting process described in the first embodiment is merely an example, and the technology of the present disclosure is not limited thereto. For example, instead of the operation mode setting process shown in FIG. 12C, the operation mode setting process shown in FIG. 16 may be executed by the CPU 94. The operation mode setting process shown in FIG. 16 differs from the operation mode setting process shown in FIG. 12C in that it includes the process of step ST35.

In step S35 shown in FIG. 16, the CPU 94 determines whether the strength of the magnetic field MF is less than a threshold value based on the magnetic field strength signal. In step ST35, if the strength of the magnetic field MF is equal to or greater than the threshold value, the determination is negative and the operation mode setting process moves to step ST22 shown in FIG. 12A. In step ST35, if the strength of the magnetic field MF is less than the threshold value, the determination is affirmative and the operation mode setting process moves to step ST36.

Note that in the examples shown in FIGS. 12B and 15, when the command indicated by the command signal is a write command, the medium time processing mode is set and the second frequency is set as the clock frequency. The disclosed technique is not limited to this, and when the command indicated by the command signal is a write command, the long-time processing mode may be set and the third frequency may be set as the clock frequency. Further, in the examples shown in FIGS. 12C and 16, when the command indicated by the command signal is a read command, the long-time processing mode is set and the third frequency is set as the clock frequency. The technique is not limited to this, and when the command indicated by the command signal is a read command, the intermediate time processing mode may be set and the second frequency may be set as the clock frequency. In this way, when the command indicated by the command signal is a write command or a read process, the processing time may be longer than a short time, a medium time or a long time, and the clock frequency is higher than the first frequency. The lower the better.

Further, in the examples shown in FIGS. 13 to 16, the response time is changed depending on the strength of the magnetic field MF, but the response time may be fixed regardless of the strength of the magnetic field MF. .

Further, in the first embodiment, the second frequency is set to 1/2 of the first frequency, and the third frequency is set to 1/4 of the first frequency, but the technology of the present disclosure is not limited to this. First, the second frequency may be a frequency lower than the first frequency, and the third frequency may be a frequency lower than the second frequency. The level at which the second frequency is lower than the first frequency and/or the level at which the third frequency is lower than the second frequency is the voltage remaining in the external capacitor 54 and the built-in capacitor 80, that is, the voltage in the cartridge memory 19. It may be changed according to the remaining power. In this case, for example, if the power remaining in the cartridge memory 19 is lower than the threshold, the computer 84 sets the second frequency to 1/3 or less of the first frequency, and sets the third frequency to the second frequency. The clock signal generator 86 is controlled to make the same frequency as the second frequency or a third frequency lower than the second frequency.

[Second embodiment]
The first embodiment has been described using an example in which the external capacitor 54 externally attached to the IC chip 52 has a capacitance value necessary to cause the resonant circuit 92 to resonate at a predetermined resonant frequency. . In the second embodiment, an example will be described in which the external capacitor 54 has a resistance component necessary for the resonant circuit 92 to obtain a predetermined Q value in addition to a necessary capacitance value. Note that in the second embodiment, the same components as those described in the first embodiment are represented by the same symbols as in the first embodiment, and the explanation thereof will be omitted.

As shown in FIG. 17 as an example, the signal induced by the resonant circuit 92 has a maximum strength S at the resonant frequency ω ₀ . In the resonant circuit 92, the resonant frequency ω ₀ is a frequency corresponding to the frequency of the magnetic field MF (for example, 13.56 MHz). The Q value (Quality Factor) is a value indicating the sharpness of a signal at the resonance frequency ω ₀ and is defined as ω ₀ /Δω. Here, Δω is the difference between frequencies ω ₁ and ω ₂ having a signal strength of S/√2 when the signal strength at the resonant frequency ω ₀ is S. That is, when ω ₂ > ω ₁ , the Q value (Q) is
Q=ω ₀ /Δω=ω ₀ /(ω ₂ -ω ₁ ) (1)
It can be expressed as.

FIG. 18 shows an example of resonance signals Q1 and Q2 having different Q values. As an example, as shown in FIG. 18, the resonance signal Q2 indicated by the two-dot chain line has a lower Q value than the resonance signal Q1 indicated by the solid line. In other words, the resonance signal Q1 has a higher Q value than the resonance signal Q2. At the resonant frequency ω ₀ , the strength S1-1 of the resonant signal Q1 is higher than the strength S2-1 of the resonant signal Q2. That is, at the resonance frequency ω ₀ , the higher the Q value, the steeper the graph and the higher the signal strength. This indicates that even if the strength of the magnetic field MF received by the cartridge memory 19 decreases, the resonant circuit 92 having a high Q value can induce a strong resonant signal. Therefore, the communication distance between the non-contact reading/writing device 50 and the cartridge memory 19 improves as the Q value increases.

On the other hand, at a frequency ω ₀ +α or ω ₀ −α where the resonance frequency ω ₀ includes an error α, the strength S2-2 of the resonance signal Q2 is greater than the strength S1-2 of the resonance signal Q1. This indicates that when the resonant frequency ω ₀ is unstable, the resonant circuit 92 with a low Q value can induce a stronger resonant signal than the resonant circuit 92 with a high Q value. Therefore, the communication stability between the non-contact reading/writing device 50 and the cartridge memory 19 is improved as the Q value is lower.

In the second embodiment, the cartridge memory 19 has a high Q value to achieve a communication distance longer than the standard communication distance, and a low Q value to realize communication stability better than the standard communication stability. Can be set in advance. Here, the reference communication distance is a value derived as a communication distance that does not pose a problem in the practical use of the cartridge memory 19, for example, through tests using actual devices and/or computer simulations. Further, the reference communication stability is a value derived as a communication stability that does not hinder the practical use of the cartridge memory 19, for example, through a test using an actual device and/or computer simulation. The high Q value is a value derived as a Q value for achieving a target communication distance, for example, through tests using actual equipment and/or computer simulation, and is a value that differs depending on the use of the cartridge memory 19. . A low Q value is a value lower than a high Q value, and is a value derived as a Q value to achieve the target communication stability, for example, through tests using actual equipment and/or computer simulations. This is a value that differs depending on the use of the cartridge memory 19. Note that the reference communication distance is an example of the "reference communication distance" according to the technology of the present disclosure, and the reference communication stability is an example of the "reference communication stability" according to the technology of the present disclosure.

Next, we will specifically consider the formula for deriving the Q value. The Q value is a value determined based on the characteristics of the coil 60, built-in capacitor 80, and external capacitor 54 that constitute the resonant circuit 92, and is a value unique to each resonant circuit 92. In the resonant circuit 92, the coil 60, the built-in capacitor 80, and the external capacitor 54 are connected in parallel to the power supply circuit 82. Furthermore, since the coil 60, built-in capacitor 80, and external capacitor 54 each have a resistance component, the resonant circuit 92 can be regarded as a parallel circuit shown in FIG. 19, for example. In FIG. 19, V indicates the voltage of the power supply circuit 82. L indicates the inductance of the coil 60. The capacitor is a combination of the built-in capacitor 80 and the external capacitor 54 connected in parallel, and has a combined capacitance CA of the built-in capacitor 80 and the external capacitor 54. The resistor has a resistance value R that is a combination of resistance components of the coil 60, built-in capacitor 80, and external capacitor 54.

In FIG. 19, the current flowing through the resistor is I _R , the current flowing through the inductor I _L , and the current flowing through the capacitor I _C . In the resonant state, the current I _L flowing through the inductor and the current I _C flowing through the capacitor become equal. The Q value is determined by the ratio of the current I _L flowing through the inductor and the current I _R flowing through the resistor.
Q=I _L /I _R =R/ωL=R(C/L) ^1/2 (2)
It can be expressed as.

As is clear from equation (2), the Q value is determined by the resistance value R of the resistor, the capacitance C of the capacitor, and the inductance L of the inductor. That is, the Q value of the resonant circuit 92 can be changed depending on at least one of the inductance of the coil 60, the capacitance of the built-in capacitor 80, the capacitance of the external capacitor 54, and the resistance component of the resonant circuit 92.

As shown in FIG. 20 as an example, in the second embodiment, for example, two predetermined Q values are achieved by selectively using two types of external capacitors 54-1 and 54-2 with different characteristics. A resonant circuit 92 having one of them is realized. The different characteristics of the external capacitors 54-1 and 54-2 are, for example, insulation resistance. If the external capacitor 54-1 has a higher insulation resistance value than the external capacitor 54-2, using the external capacitor 54-1 will reduce the amount of power included in the resonant circuit 92 compared to using the external capacitor 54-2. The insulation resistance increases, and therefore, as is clear from equation (2), the Q value increases. On the other hand, when the external capacitor 54-2 is used, the Q value of the resonant circuit 92 becomes smaller than when the external capacitor 54-1 is used. Note that the insulation resistance is an example of a "resistance component" according to the technology of the present disclosure.

As an example, as shown in FIG. 21, at the resonant frequency (eg, 13.56 MHz), the external capacitor 54-1 has an insulation resistance value R1, and the external capacitor 54-2 has an insulation resistance value R2. The insulation resistance value R1 of the external capacitor 54-1 is higher than the insulation resistance value R2 of the external capacitor 54-2.

In the manufacturing process of the cartridge memory 19, either one of the high Q value 55-1 and the low Q value 55-2 is selected as the reference Q value 57. The high Q value 55-1 is a Q value that contributes to improving the communication distance. The low Q value 55-2 is a value lower than the high Q value 55-1, and is a Q value that contributes to improving communication stability. The high Q value 55-1 and the low Q value 55-2 are values each including a predetermined error. The reference Q value 57 is selected by the manufacturer of the cartridge memory 19 depending on the purpose of the cartridge memory 19, the usage environment, and the like. Note that the reference Q value 57 is an example of a "reference Q value" according to the technology of the present disclosure.

When a high Q value 55-1 is selected as the reference Q value 57, an external capacitor 54-1 having an insulation resistance value R1 is externally attached to the IC chip 52. The resistance component included in the IC chip 52 is known, and the insulation resistance value R1 of the external capacitor 54-1 is determined by the Q of the resonant circuit 92 when the external capacitor 54-1 is connected in parallel with the built-in capacitor 80. The value is set to a value within a range where the value is a high Q value of 55-1. As a result, a resonant circuit 92 having a high Q value of 55-1 is realized.

When the low Q value 55-2 is selected as the reference Q value 57, an external capacitor 54-2 having an insulation resistance value R2 is externally attached to the IC chip 52. The insulation resistance value R2 of the external capacitor 54-2 is a value within a range where the Q value of the resonant circuit 92 is a low Q value of 55-2 when the external capacitor 54-2 is connected in parallel to the built-in capacitor 80. It is stipulated in As a result, a resonant circuit 92 having a low Q value of 55-2 is realized.

As described above, in the second embodiment, the cartridge memory 19 is mounted on the substrate 26 on which the coil 60 that induces electric power by the action of the magnetic field MF is formed, and includes the IC chip 52 having the built-in capacitor 80. , and an external capacitor 54 externally attached to the IC chip 52. The coil 60, the built-in capacitor 80, the external capacitor 54, and the like constitute a resonant circuit 92 that resonates at a predetermined resonant frequency under the action of the magnetic field MF. The external capacitor 54 is connected in parallel to the built-in capacitor 80, and the resonant circuit 92 has a Q value determined according to the characteristics of the external capacitor 54. Therefore, according to this configuration, the Q value of the resonant circuit 92 can be changed by using the external capacitor 54 having different characteristics.

Further, the Q value is determined according to the insulation resistance value of the external capacitor 54 at the resonant frequency. Therefore, according to this configuration, the Q value of the resonant circuit 92 can be changed by selectively using the external capacitors 54-1 and 54-2 having different insulation resistance values as the external capacitor 54.

Further, the Q value is set to a value that realizes a longer communication distance than the standard communication distance by the cartridge memory 19. Therefore, according to this configuration, the communication distance can be improved compared to the resonant circuit 92 formed by externally attaching the external capacitor 54-2 having a low insulation resistance value R2.

Further, the Q value is set to a value that achieves better communication stability than the standard communication stability provided by the cartridge memory 19. Therefore, according to this configuration, communication stability can be improved compared to the resonant circuit 92 formed by externally attaching the external capacitor 54-1 having a high insulation resistance value R1.

In the second embodiment, the Q value of the resonant circuit 92 is selected from one of the high Q value 55-1 and the low Q value 55-2 and set as the reference Q value 57 by the manufacturer of the cartridge memory 19. However, the technology of the present disclosure is not limited thereto. As an example, as shown in FIG. 22, in the manufacturing process of the cartridge memory 19, the Q value of the resonant circuit 53 including the coil 60 and the built-in capacitor 80 is measured as a provisional Q value 59, and based on the measured provisional Q value 59. Accordingly, the Q value of the resonant circuit 92 may be determined. Note that the tentative Q value 59 is an example of a "temporary Q value" according to the technology of the present disclosure.

The tentative Q value 59 is measured with a Q meter, an impedance analyzer, an oscilloscope, etc., with the external capacitor 54 not connected to the IC chip 52 and with the IC chip 52 connected to the coil 60. Ru. Therefore, according to this configuration, a value that can be realized as the Q value of the resonant circuit 92 can be determined based on the provisional Q value 59.

Further, in the second embodiment, one of the two types of external capacitors 54-1 and 54-2 is selectively used according to the set reference Q value 57, but the technology of the present disclosure is not applicable to this. but not limited to. As an example, as shown in FIG. 23, the characteristics of the external capacitor 54, for example, the insulation resistance value, may be determined based on the degree of difference between the set reference Q value 57 and the measured temporary Q value 59. The external capacitor 54 is formed to have an insulation resistance value such that the Q value of the resonant circuit 92 becomes the reference Q value 57 when the external capacitor 54 is connected in parallel to the built-in capacitor 80. Therefore, according to this configuration, the degree of freedom in setting the reference Q value 57 can be improved compared to the case where the external capacitor 54 is selected from a plurality of types of capacitors.

The resonant circuit 92 is manufactured by the manufacturing process shown in FIG. 24 as an example.

In the resonant circuit manufacturing process shown in FIG. 24, first, in step ST101, a reference Q value 57, which is the Q value of the resonant circuit 92 when the external capacitor 54 is connected in parallel to the built-in capacitor 80, is determined. The reference Q value 57 is determined by the manufacturer of the cartridge memory 19 according to the required performance of the cartridge memory 19, for example, through tests using actual machines and/or computer simulations. After this, the resonant circuit manufacturing process moves to step ST102.

In step ST102, the Q value of the resonant circuit 53 including the coil 60 and the built-in capacitor 80 is measured as a provisional Q value 59. After this, the resonant circuit manufacturing process moves to step ST103.

In step ST103, based on the degree of difference between the determined reference Q value 57 and the measured temporary Q value 59, if the external capacitor 54 is connected in parallel to the built-in capacitor 80, the Q External capacitor 54 is formed so that the value becomes reference Q value 57. After this, the resonant circuit manufacturing process moves to step ST104.

In step ST104, the formed external capacitor 54 is connected in parallel to the built-in capacitor 80. Therefore, according to the resonant circuit manufacturing process, it is possible to manufacture the resonant circuit 92 having the reference Q value 57 determined by the manufacturer.

Further, in the second embodiment, an example of a mode in which the Q value of the resonant circuit 92 is changed by using external capacitors 54 having different insulation resistance values, which is an example of "characteristics" according to the technology of the present disclosure, will be described. However, the technology of the present disclosure is not limited to this. As an example, as shown in FIG. 25, the Q value of the resonant circuit 92 may be changed by connecting a resistor 61 in parallel with the IC chip 52 and the external capacitor 54. When the resistor 61 is externally attached, as is clear from equation (2), the higher the resistance value of the resistor 61, the higher the Q value of the resonant circuit 92.

In this case, as shown in FIG. 26 as an example, the resistor 61 may be externally connected on the surface 26B of the cartridge memory 19 in parallel with the IC chip 52 and the external capacitor 54 by wire connection. The resistor 61 is adhered to and electrically connected to the surface 26B of the cartridge memory 19. Specifically, one end of the resistor 61 is connected to the first conductive portion 62A via a wiring 64E, and the other end is connected to the second conductive portion 62B via a wiring 64F.

Further, the embodiment in which the resistor 61 is connected in parallel with the IC chip 52 and the external capacitor 54 is not limited to this, and as an example, as shown in FIG. It may be wired in parallel with chip 52 and external capacitor 54 . In this case, as shown in FIG. 28 as an example, the resistor 61 is embedded in the substrate 26 in advance, and if it is desired to improve the Q value of the resonant circuit 92, one end of the resistor 61 is connected to the first It may be connected to the conductive portion 62A, and the other end may be connected to the second conductive portion 62B via a wiring 64F. According to this configuration, since the resistor 61 is embedded in the substrate 26, the resistor 61 can be protected from dust and/or external stimuli (for example, light, moisture, impact, etc.). Furthermore, since the glove top 63 that covers the IC chip 52 and external capacitor 54 does not need to cover the resistor 61 on the surface 26B of the cartridge memory 19, it is possible to externally attach the resistor 61 while using conventional members. can.

Note that in each of the above embodiments, an example in which the IC chip 52 and the coil 60 are connected by a wire connection method has been described, but the technology of the present disclosure is not limited to this. For example, as shown in FIG. 29, the IC chip 52 and the coil 60 may be connected by a flip-chip connection method. In this case, for example, one terminal of the positive terminal and the negative terminal of the IC chip 52 is directly connected to the first conductive portion 62A, and the other terminal is directly connected to the second conductive portion 62B. Therefore, according to this configuration, the electrical connection between the IC chip 52 and the coil 60 can be realized in a smaller space than when the IC chip 52 and the coil 60 are connected by a wire connection method.

Further, in each of the above embodiments, the inclination angle θ is 45 degrees, but the technology of the present disclosure is not limited to this, and as an example, as shown in FIG. , an inclination angle θ1 smaller than the inclination angle θ may be adopted. An example of the inclination angle θ1 is 30 degrees. Since the inclination angle θ1 is smaller than the inclination angle θ, more lines of magnetic force can penetrate the coil 60 (see FIG. 7) than in the case of the inclination angle θ. As a result, when the magnetic tape cartridge 10 is loaded in the magnetic tape drive 30, the coil 60 can obtain a larger induced current than when the tilt angle is θ.

As an example, as shown in FIG. 31, in the production process of the magnetic tape cartridge 10, the management process of the magnetic tape cartridge 10, and/or the distribution process (for example, the distribution process in the market) in which the magnetic tape cartridge 10 is distributed, A non-contact read/write device 150 reads and writes management information 100 and the like into the cartridge memory 19 of each magnetic tape cartridge 10 in a package 200 in which a plurality of magnetic tape cartridges 10 stacked in a direction are bundled with a plastic film. . The non-contact reading/writing device 150 reads and writes the management information 100 and the like in the cartridge memory 19 by moving the non-contact reading/writing device 150 along the direction in which a plurality of magnetic tape cartridges 10 are stacked on the rear side of the magnetic tape cartridge 10. It is done while In this case, for example, the non-contact read/write device 150 sequentially emits the magnetic field MF1 to each of the magnetic tape cartridges 10 while repeatedly turning the magnetic field MF1 on and off.

By the way, in an environment where the magnetic tape cartridge 10 is loaded in the magnetic tape drive 30 (first environment), the magnetic field MF (first magnetic field ), a magnetic field MF is applied from the side directly facing the reference surface 16A1 toward the back surface 26A (coil formation surface) of the substrate 26 where the coil 60 is formed (see FIG. 30). As a result, more lines of magnetic force pass through the coil 60 than when the inclination angle of the cartridge memory 19 is the inclination angle θ, and a large induced current can be obtained.

On the other hand, in an environment of a production process, a management process, and/or a distribution process (second environment), a plurality of magnetic tape cartridges 10 are handled as a package 200, as shown in FIG. 31 as an example. In this case, a magnetic field MF1 (second magnetic field) is applied toward the back surface 26A from the side that intersects with the normal direction of the reference surface 16A1 and faces the back surface 26A. As a result, compared to the case where the inclination angle of the cartridge memory 19 is the inclination angle θ, reading and writing of management information 100, etc. to an unintended magnetic tape cartridge 10 within the package 200 is suppressed (crosstalk occurs). be able to.

In the example shown in FIG. 31, when the non-contact reading/writing device 150 communicates with each cartridge memory 19 in the package 200 via the magnetic field MF1, the non-contact reading/writing device 150 is placed vertically with respect to the package 200. Although a mode in which the package 200 is moved along the vertical direction is illustrated, this mode is just an example, and the position of the non-contact type reading/writing device 150 may be fixed and the package 200 may be moved along the vertical direction. Further, the non-contact reading/writing device 150 and the package 200 may be moved in opposite directions in the vertical direction. In this way, when the non-contact reading/writing device 150 communicates with each cartridge memory 19 in the package 200 via the magnetic field MF1, the non-contact reading/writing device 150 is positioned relative to the package 200 along the vertical direction. All you have to do is move.

When the non-contact read/write device 150 reads or writes management information 100 or the like to the cartridge memory 19, it emits a magnetic field MF1 from the rear of the magnetic tape cartridge 10 toward the cartridge memory 19. The power generator 70 of the cartridge memory 19 generates power by the magnetic field MF1 acting on the coil 60 of the cartridge memory 19. The non-contact reading/writing device 150 then transmits a command signal to the cartridge memory 19 via the magnetic field MF1. The cartridge memory 19 uses the power generated by the power generator 70 to execute processing according to the command signal, and transmits the processing result to the non-contact reading/writing device 150 as a response signal. That is, various information is exchanged between the non-contact reading/writing device 150 and the cartridge memory 19 via the magnetic field MF1.

Cartridge memory 19 of one magnetic tape cartridge 10 (hereinafter also referred to as "single cartridge" without reference numeral) included in package 200 (hereinafter also referred to as "read/write target cartridge memory" without reference numeral) , a magnetic field MF1 is applied from the non-contact reading/writing device 150 toward the cartridge memory to be read/written from the rear of the single cartridge. However, in the case of the inclination angle θ, depending on the directivity of the magnetic field MF1, the magnetic field MF1 may also be applied to the cartridge memory 19 of the magnetic tape cartridge 10 adjacent to the single cartridge in the package 200 (hereinafter also referred to as "adjacent cartridge"). , and there is a risk that the management information 100 or the like may be read or written to the cartridge memory 19 of an adjacent cartridge. In other words, when the management information 100 and the like are read and written to the cartridge memory 19 of an adjacent cartridge, crosstalk occurs.

Here, when the inclination angle is θ1, the number of magnetic lines of force passing through the coil 60 of the cartridge memory 19 can be reduced compared to the inclination angle θ, and compared to the inclination angle θ, the number of lines of magnetic force passing through the coil 60 of the cartridge memory 19 of the adjacent cartridge is smaller than that of the inclination angle θ. It becomes difficult to apply the magnetic field MF1. As a result, when the inclination angle is set to θ1, compared to the inclination angle θ, it is possible to suppress erroneous reading and writing of the management information 100 and the like to the magnetic tape cartridge 10, that is, the occurrence of crosstalk. As a result, for example, in the production process of the magnetic tape cartridge 10, the productivity of the magnetic tape cartridge 10 can be improved without increasing equipment costs. Furthermore, in the process of managing the magnetic tape cartridge 10, it is possible to improve the efficiency of managing the magnetic tape cartridge 10 without increasing equipment costs.

Further, in the example shown in FIG. 10, an example is given in which the operation mode setting processing program 102 is stored in the NVM 96, but the technology of the present disclosure is not limited to this. For example, as shown in FIG. 32, the operation mode setting processing program 102 may be stored in the storage medium 300. Storage medium 300 is a non-transitory storage medium. An example of the storage medium 300 is any portable storage medium such as an SSD or a USB memory.

The operation mode setting processing program 102 stored in the storage medium 300 is installed in the computer 84. The CPU 94 executes the operation mode setting process according to the operation mode setting process program 102. In the example shown in FIG. 32, the CPU 94 is a single CPU, but it may be a plurality of CPUs.

Further, the operation mode setting processing program 102 is stored in a storage unit of another computer or server device connected to the computer 84 via a communication network (not shown), and is operated in response to a request from the cartridge memory 19. The mode setting processing program 102 may be downloaded and installed on the computer 84.

Although the computer 84 is illustrated in the example shown in FIG. 32, the technology of the present disclosure is not limited to this, and instead of the computer 84, a device including an ASIC, an FPGA, and/or a PLD may be applied. . Further, instead of the computer 84, a combination of hardware configuration and software configuration may be used.

The following various processors can be used as hardware resources for executing the operation mode setting process. Examples of the processor include a CPU, which is a general-purpose processor that functions as a hardware resource that executes an operation mode setting process by executing software, that is, a program. Examples of the processor include a dedicated electric circuit such as an FPGA, PLD, or ASIC, which is a processor having a circuit configuration specifically designed to execute a specific process. Each processor has a built-in or connected memory, and each processor uses the memory to execute operation mode setting processing.

The hardware resource that executes the operation mode setting process may be configured with one of these various processors, or a combination of two or more processors of the same type or different types (for example, a combination of multiple FPGAs, or a combination of a CPU and an FPGA). Furthermore, the hardware resource that executes the operation mode setting process may be one processor.

As an example of configuration using one processor, first, one processor is configured by a combination of one or more CPUs and software, and this processor functions as a hardware resource that executes operation mode setting processing. be. Second, as typified by SoC, there is a form that uses a processor that implements the functions of the entire system including a plurality of hardware resources that execute operation mode setting processing with one IC chip. In this way, the operation mode setting process is realized using one or more of the various processors described above as hardware resources.

Furthermore, as the hardware structure of these various processors, more specifically, an electric circuit that is a combination of circuit elements such as semiconductor elements can be used. Further, the above operation mode setting process is just an example. Therefore, it goes without saying that unnecessary steps may be deleted, new steps may be added, or the processing order may be changed within the scope of the main idea.

The descriptions and illustrations described above are detailed explanations of portions related to the technology of the present disclosure, and are merely examples of the technology of the present disclosure. For example, the above description regarding the configuration, function, operation, and effect is an example of the configuration, function, operation, and effect of the part related to the technology of the present disclosure. Therefore, unnecessary parts may be deleted, new elements may be added, or replacements may be made to the written and illustrated contents shown above without departing from the gist of the technology of the present disclosure. Needless to say. In addition, in order to avoid confusion and facilitate understanding of the parts related to the technology of the present disclosure, the descriptions and illustrations shown above do not include parts that require particular explanation in order to enable implementation of the technology of the present disclosure. Explanations regarding common technical knowledge, etc. that do not apply are omitted.

In this specification, "A and/or B" is synonymous with "at least one of A and B." That is, "A and/or B" means that it may be only A, only B, or a combination of A and B. Furthermore, in this specification, even when three or more items are expressed by connecting them with "and/or", the same concept as "A and/or B" is applied.

All documents, patent applications, and technical standards mentioned herein are incorporated herein by reference to the same extent as if each individual document, patent application, and technical standard was specifically and individually indicated to be incorporated by reference. Incorporated by reference into this book.

Regarding the above embodiments, the following additional notes are further disclosed.

(Additional note 1)
A substrate on which a coil is formed, a power generator that generates power by an external magnetic field applied from the outside acting on the coil, and a power generator that uses the power generated by the power generator to generate power from the outside. A processor that processes commands contained in a magnetic field; A non-contact management method for managing the magnetic tape cartridge by applying the external magnetic field and communicating with the non-contact communication medium via the applied external magnetic field,
arranging the substrate at an angle of less than 45 degrees with respect to the reference plane;
In a first environment where the magnetic tape cartridge is loaded into a magnetic tape drive, the external magnetic field is applied from the side directly facing the reference plane toward the coil forming surface of the substrate on which the coil is formed. applying a first magnetic field as
Under a second environment in which the magnetic tape cartridge exists outside the magnetic tape drive, the magnetic tape cartridge is directed toward the coil forming surface from a side that intersects with the normal direction of the reference plane and faces the coil forming surface. A non-contact management method comprising applying a second magnetic field as the external magnetic field.

(Additional note 2)
The non-contact management method according to appendix 1, wherein the second environment is a production process of the magnetic tape cartridge, a management process of the magnetic tape cartridge, and/or a distribution process in which the magnetic tape cartridge is distributed.

(Additional note 3)
Each of the production process, the management process, and the distribution process applies the second magnetic field to the non-contact communication medium in a package in which a plurality of magnetic tape cartridges are stacked in the normal direction. The non-contact management method according to Supplementary Note 1 or 2, which includes a step.

(Additional note 4)
Supplementary note 3, wherein the external device applies the external magnetic field to the coil forming surface of the non-contact communication medium of each of the plurality of magnetic tape cartridges while moving along the normal direction. Contactless management method described.

10 Magnetic tape cartridge 12 Case 12A Right wall 12B Opening 14 Upper case 14A Top plate 14A1 Inner surface 16 Lower case 16A Bottom plate 16A1 Reference surface 16B Rear wall 18 Cartridge reel 18A Reel hub 18B1 Upper flange 18B2 Lower flange 19 Cartridge memory 20 Support member 20A 1st Inclined tables 20A1, 20B1 Inclined surface 20B Second inclined table 22 Position regulating rib 24 Rib 24A Top surface 26 Substrate 26A Back surface 26B Front surface 30 Magnetic tape drive 34 Conveying device 36 Reading head 38 Control device 40 Sending motor 42 Take-up reel 44 Winding Motor 46 Reading element 48 Holder 50, 150 Non-contact read/write device 52 IC chip 53 Resonant circuit 54, 54-1, 54-2 External capacitors 54A, 54B Electrode 55-1 High Q value 55-2 Low Q value 56 Sealing Material 57 Standard Q value 59 Temporary Q value 60 Coil 61 Resistor 62A First conduction part 62B Second conduction part 63 Globe top 64A, 64B, 64C, 64D, 64E, 64F Wiring 70 Power generator 80 Built-in capacitor 82 Power supply circuit 84 Computer 86 Clock signal generator 88 Signal processing circuit 90 Magnetic field strength measurement circuit 92 Resonance circuit 94 CPU
96 NVM
98 RAM
99 Bus 100 Management information 102 Operation mode setting processing program 200 Package 300 Storage medium A, B, C Arrow CA Combined capacitance GR Guide roller I _C , I _L , I _R current L Inductance MF, MF1 Magnetic field MT Magnetic tape Q1, Q2 Resonance Signal R Resistance value R1, R2 Insulation resistance value S Signal strength S1-1, S1-2, S2-1, S2-2 Strength α Error θ, θ1 Inclination angle ω ₀ Resonance frequency ω ₁ , ω ₂ Frequency

Claims (17)

A processing circuit having a built-in capacitor and mounted on a substrate on which a coil is formed that induces electric power when an external magnetic field applied from the outside acts on it;
an external capacitor that is attached externally to the processing circuit and that forms a resonant circuit that resonates at a predetermined resonant frequency when the external magnetic field acts, together with the built-in capacitor and the coil; Prepare,
The external capacitor is connected in parallel to the built-in capacitor,
The resonant circuit has a Q value determined according to the characteristics of the external capacitor,
The Q value is determined based on a provisional Q value measured in a state in which the external capacitor is not connected to the processing circuit and in a state in which the processing circuit is connected to the coil. Non-contact method. Communication medium. A processing circuit having a built-in capacitor and mounted on a substrate on which a coil is formed that induces electric power when an external magnetic field applied from the outside acts on it;
an external capacitor that is attached externally to the processing circuit and that forms a resonant circuit that resonates at a predetermined resonant frequency when the external magnetic field acts, together with the built-in capacitor and the coil; Prepare,
The external capacitor is connected in parallel to the built-in capacitor,
The resonant circuit has a Q value determined according to the characteristics of the external capacitor,
Based on the degree of difference between the reference Q value and the provisional Q value measured in a state where the external capacitor is not connected to the processing circuit and the processing circuit is connected to the coil, A non-contact communication medium with defined external capacitor characteristics. The contactless communication medium of claim 1, wherein the processing circuit operates using power generated by the resonant circuit. The non-contact communication medium according to any one of claims 1 to 3 , wherein the built-in capacitor and the external capacitor are connected in parallel to the coil. 5. The non-contact communication medium according to claim 4 , wherein the capacitance of the external capacitor is determined based on an actual measurement value of the capacitance of the built-in capacitor. The non-contact communication medium according to any one of claims 1 to 5 , wherein the processing circuit and the external capacitor are bonded to a specific surface of the substrate and electrically connected. 7. The non-contact communication medium according to claim 6, wherein the processing circuit and the external capacitor are sealed with a sealing material on the specific surface. The non-contact communication medium according to any one of claims 1 to 7, wherein the processing circuit and the external capacitor are electrically connected by a wire connection method. The non-contact communication medium according to any one of claims 1 to 8 , wherein the processing circuit is electrically connected to the coil by a flip-chip connection method. The processing circuit is of a general-purpose type that can be used for applications other than magnetic tape cartridges , and functions as an arithmetic unit for magnetic tape cartridges by installing a program for magnetic tape cartridges. The contactless communication medium according to item (1). A contactless communication medium according to any one of claims 1 to 10 ,
A magnetic tape cartridge comprising a magnetic tape,
The contactless communication medium has a memory,
The memory stores information regarding the magnetic tape. Magnetic tape cartridge. A processing circuit that is mounted on a substrate on which a coil that induces electric power is formed by the action of an external magnetic field applied from the outside and has a built-in capacitor, and an external capacitor that is externally attached to the processing circuit, A method for manufacturing a non-contact communication medium, comprising: an external capacitor that, together with the built-in capacitor and the coil, constitutes a resonant circuit that resonates at a predetermined resonance frequency when the external magnetic field acts,
a Q value determining step of determining a Q value of the resonant circuit when the external capacitor is connected in parallel to the built-in capacitor;
an external capacitor forming step of forming the external capacitor under conditions such that when the external capacitor is connected in parallel to the built-in capacitor, the Q value of the resonant circuit becomes the Q value determined by the Q value determining step; ,
a connecting step of connecting the external capacitor formed in the external capacitor forming step in parallel to the built-in capacitor,
The Q value is roughly divided into a first Q value that contributes to improving communication distance and a second Q value that contributes to improving communication stability,
The Q value determining step determines either the first Q value or the second Q value by selectively using two types of external capacitors with different characteristics,
In the external capacitor forming step, the external capacitor is formed under conditions that result in the first Q value or the second Q value determined in the Q value determining step. The condition is such that when the external capacitor is connected in parallel to the built-in capacitor, the Q value of the resonant circuit is determined by the Q value determining step in a specific frequency band. 13. The method for manufacturing a non-contact communication medium according to claim 12, wherein the condition is that the medium has a resistance component of a certain value. The contactless communication medium according to claim 12 or 13 , wherein the Q value determined by the Q value determining step is a value that realizes a communication distance longer than a reference communication distance by the contactless communication medium. Production method. The Q value determined by the Q value determining step is a value that realizes better communication stability than the reference communication stability by the non-contact communication medium, according to any one of claims 12 to 14. A method of manufacturing the contactless communication medium described above. A processing circuit that is mounted on a substrate on which a coil that induces electric power is formed by the action of an external magnetic field applied from the outside and has a built-in capacitor, and an external capacitor that is externally attached to the processing circuit, A method for manufacturing a non-contact communication medium, comprising: an external capacitor that, together with the built-in capacitor and the coil, constitutes a resonant circuit that resonates at a predetermined resonance frequency when the external magnetic field acts,
a Q value determining step of determining a Q value of the resonant circuit when the external capacitor is connected in parallel to the built-in capacitor;
an external capacitor forming step of forming the external capacitor under conditions such that when the external capacitor is connected in parallel to the built-in capacitor, the Q value of the resonant circuit becomes the Q value determined by the Q value determining step; ,
a connecting step of connecting the external capacitor formed in the external capacitor forming step in parallel to the built-in capacitor,
The Q value determining step is to determine the Q value of the resonant circuit based on the provisional Q value measured when the external capacitor is not connected to the processing circuit and the processing circuit is connected to the coil. A method for manufacturing a contactless communication medium that determines the Q value. A processing circuit that is mounted on a substrate on which a coil that induces electric power is formed by the action of an external magnetic field applied from the outside and has a built-in capacitor, and an external capacitor that is externally attached to the processing circuit, A method for manufacturing a non-contact communication medium, comprising: an external capacitor that, together with the built-in capacitor and the coil, constitutes a resonant circuit that resonates at a predetermined resonance frequency when the external magnetic field acts,
a Q value determining step of determining a Q value of the resonant circuit when the external capacitor is connected in parallel to the built-in capacitor;
an external capacitor forming step of forming the external capacitor under conditions such that when the external capacitor is connected in parallel to the built-in capacitor, the Q value of the resonant circuit becomes the Q value determined by the Q value determining step; ,
a connecting step of connecting the external capacitor formed in the external capacitor forming step in parallel to the built-in capacitor,
The Q value determining step includes determining a reference Q value and a temporary Q value measured in a state where the external capacitor is not connected to the processing circuit and the processing circuit is connected to the coil. A method for manufacturing a non-contact communication medium, wherein characteristics of the external capacitor are determined based on the degree of difference.