JP7350144B2 - light emitting device - Google Patents

Description

The present disclosure relates to a light emitting device.

Various techniques are known for improving the light emitting characteristics of light emitting devices equipped with light emitting elements. Japanese Unexamined Patent Publication No. 2018-120959 describes a light emitting device in which an LED chip is mounted not only in the first region but also in a peripheral region whose top surface and side surfaces are covered by a reflective section. The light emitting device described in Japanese Patent Application Laid-open No. 2018-120959 has an LED chip mounted on the periphery in addition to the first region, so that reduction in luminous efficiency due to heat generation of the LED chip can be suppressed. High output is achieved.

Japanese Patent Laid-Open No. 2014-154349 discloses that a light guide plate is provided above a plurality of light emitting elements, the side surface of the light guide part is covered with a reflective surface, and light introduced from the plurality of light emitting elements to the light guide plate is guided to the outside. Lighting equipment is listed. In the lighting device described in Japanese Patent Application Publication No. 2014-154349, among the light introduced from the light emitting element to the light guide plate disposed above, the light that reaches the light output surface connected to the reflection surface is led out to the outside. Therefore, uneven brightness and glare can be suppressed.

Japanese Patent Laid-Open No. 2014-86405 discloses that a light guide plate is provided above a light emitting element disposed on a peripheral edge, the side surface of the light guide plate is covered with a light reflective layer, and the light emitted from the light emitting element is directed to the light guide plate side by the light reflective layer. A lighting device is described that has a reflective configuration. In the lighting device described in Japanese Unexamined Patent Publication No. 2014-86405, by increasing the amount of light emitted from the peripheral portion, it is possible to provide a lighting device that can be expected to have excellent light utilization efficiency.

In the light emitting device described in Japanese Patent Application Laid-open No. 2018-120959, the light emitting elements are arranged over the entire surface of the first region, so there is a risk that the light emitting elements will be visually recognized as uneven brightness when emitting light at low brightness. be. In addition, in the light emitting device described in JP 2018-120959 A, since the fluorescent material is arranged over the entire surface of the first region, the first region is visually recognized by the color of the fluorescent material when the light is turned off, which improves aesthetic appeal. may decrease.

In the lighting devices described in JP-A No. 2014-154349 and JP-A No. 2014-86405, it is necessary to provide a light guide plate above the light emitting element, so in order to suppress uneven brightness and glare, it is necessary to The device itself has to be made thicker. Further, in the above lighting device, no consideration was given to the color of the fluorescent material of the light emitting element.

An object of the present disclosure is to provide a light emitting device that is less likely to cause uneven brightness.

Another object of the present disclosure is to provide a light-emitting device in which the color of the fluorescent material is not visible from the outside when the light is turned off, and the aesthetic appearance is less likely to deteriorate.

According to an embodiment of the present light-emitting device, a substrate has a first region and a second region arranged around the first region, a plurality of light-emitting elements mounted on the substrate in the second region, and a plurality of light-emitting elements mounted on the substrate in the second region. an encapsulant disposed on the substrate so as to cover the light emitting element; a reflective material disposed above the encapsulant and on the opposite side to the first region; and a light guide disposed in the first region facing the side surface on the region side.

In the above-mentioned light emitting device, the sealing material preferably contains a fluorescent material that converts the wavelength of light emitted from the plurality of light emitting elements and emits light of different wavelengths.

In the above light emitting device, it is preferable that the reflective material and the light guiding material do not contain a fluorescent material.

In the above light emitting device, the encapsulant converts the wavelength of the light emitted from the plurality of light emitting elements and emits it as light of a second wavelength different from the light of the first wavelength emitted from the plurality of light emitting elements. 1. A first encapsulant containing a fluorescent material; and converting the wavelength of the light emitted from the plurality of light emitting elements to produce light of a third wavelength different from the light of the first wavelength emitted from the plurality of light emitting elements. It is preferable that a second sealing material containing a second fluorescent material to be emitted is included, and each of the first sealing material and the second sealing material seals any one of the plurality of light emitting elements.

In the above light emitting device, the plurality of light emitting elements include a first group of light emitting elements disposed close to the outer edge of the light guiding material, and a side opposite to the first region side of the first group of light emitting elements. A second group of light emitting elements arranged, the first encapsulant preferably seals the first group of light emitting elements, and the second encapsulant seals the second group of light emitting elements. .

In the above light emitting device, it is preferable that the first sealing material seals all of the plurality of light emitting elements, and the second sealing material seals only some of the plurality of light emitting elements.

In the above light emitting device, the encapsulant further includes a third encapsulant that does not contain a fluorescent material, and the third encapsulant is a first encapsulant, a second encapsulant, or a plurality of light emitting elements. It is preferable that the light-emitting elements not sealed by the first sealing material and the first two sealing materials are sealed.

In the above light emitting device, it is preferable that the sealing material does not contain a fluorescent material.

In the above light emitting device, the plurality of light emitting elements preferably include a first light emitting element that emits light of a first wavelength and a second light emitting element that emits light of a wavelength different from the first wavelength.

In the above light emitting device, it is preferable that the first light emitting element and the second light emitting element are arranged alternately on the substrate.

In the above light emitting device, the plurality of light emitting elements are preferably SMD type LED chips that emit light in a direction perpendicular or horizontal to the substrate.

In the above light emitting device, the first region has a circular or polygonal shape, the upper surface of the light guide has the same outer shape as the first region, and the plurality of light emitting elements are arranged at the outer edge of the light guide. Preferably, it is arranged along the line.

In the light emitting device described above, it is preferable that the substrate has a rectangular shape and that some of the plurality of light emitting elements are arranged in a line along the longitudinal direction of the substrate.

In the above light emitting device, some of the plurality of light emitting elements may be arranged in the first region, and the reflective material may also be arranged above some of the plurality of light emitting elements arranged in the first region. preferable.

In the light emitting device described above, it is preferable that the height of the light guide from the surface of the substrate is set to gradually decrease from the center of the light guide toward the outer edge.

In the above light emitting device, the upper surface of the light guide is preferably dimpled.

The light emitting device described above preferably further includes a low refractive index layer that is disposed above the upper surface of the light guide and has a lower refractive index than the light guide.

In the above-mentioned light emitting device, it is preferable that dot-shaped resin is arranged on the upper surface of the light guide.

In the above-mentioned light emitting device, it is preferable that the reflective material is arranged so as to shield the sealing material when the substrate is viewed from above.

In the above light emitting device, the reflective material includes a frame member disposed along the outer edge of the encapsulant and a shielding member disposed above the encapsulant, and the height of the frame member from the substrate surface is , is preferably set to be higher than the height of the light guide material from the substrate surface.

In the above light emitting device, it is preferable that the reflective material is a pre-molded resin member.

The light emitting device described above preferably further includes a diffusion layer that is disposed above the upper surface of the light guiding material and contains a diffusion material that diffuses light emitted from the upper surface and does not contain a fluorescent material.

In the above light emitting device, the thickness of the central portion of the diffusion layer is preferably thinner than the thickness of the outer edge portion of the diffusion layer.

In the light emitting device described above, it is preferable that the height of the surface of the diffusion layer from the surface of the substrate is set to gradually increase from the center of the diffusion layer toward the outer edge.

The light emitting device described above further includes a circuit board having an electrode and an opening disposed on the substrate and electrically connected to the plurality of light emitting elements, and the plurality of light emitting elements are arranged on the substrate inside the opening. Preferably, it is implemented.

In the light emitting device described above, it is preferable that the surface of the substrate is textured in the first region.

In the light emitting device described above, it is preferable that in the first region, a protrusion that reflects light emitted from the sealing material is arranged on the surface of the substrate.

In the light emitting device according to the embodiment, it is possible to reduce the possibility that brightness unevenness will occur. Further, in the light emitting device according to the embodiment, the color of the fluorescent material is not visible from the outside when the light is turned off, and it is possible to reduce the possibility that the aesthetic appearance will deteriorate.

FIG. 1 is a plan view of a light emitting device according to a first embodiment. FIG. 1A is a cross-sectional view taken along line AA in FIG. 1A. 1A is a diagram showing a light emitting state of the light emitting device shown in FIG. 1A. FIG. 2 is a diagram (part 1) showing a method for manufacturing the light emitting device shown in FIG. 1. FIG. FIG. 3A is a cross-sectional view taken along line AA in FIG. 3A. FIG. 2 is a diagram (Part 2) showing a method for manufacturing the light emitting device shown in FIG. 1; FIG. 4A is a cross-sectional view taken along line AA in FIG. 4A. FIG. 2 is a diagram (part 3) showing a method for manufacturing the light emitting device shown in FIG. 1; FIG. 5A is a cross-sectional view taken along line AA in FIG. 5A. FIG. 2 is a diagram (part 4) showing a method for manufacturing the light emitting device shown in FIG. 1; FIG. 6A is a cross-sectional view taken along line AA in FIG. 6A. FIG. 2 is a diagram (part 5) showing a method for manufacturing the light emitting device shown in FIG. 1; FIG. 7A is a cross-sectional view taken along line AA in FIG. 7A. FIG. 3 is a plan view of a light emitting device according to a second embodiment. FIG. 8A is a cross-sectional view taken along line BB in FIG. 8A. FIG. 7 is a plan view of a light emitting device according to a third embodiment. FIG. 9A is a sectional view taken along line CC in FIG. 9A. FIG. 7 is a plan view of a light emitting device according to a fourth embodiment. FIG. 10A is a cross-sectional view taken along line DD in FIG. 10A. FIG. 7 is a plan view of a light emitting device according to a fifth embodiment. FIG. 11A is a cross-sectional view taken along line EE in FIG. 11A. It is a sectional view of the light emitting device concerning the 1st modification of a 1st embodiment. It is a sectional view of the light emitting device concerning the 2nd modification of a 1st embodiment. It is a sectional view of the light emitting device concerning the 3rd modification of a 1st embodiment. It is a sectional view of the light emitting device concerning the 4th modification of a 1st embodiment. It is a sectional view of the light emitting device concerning the 5th modification of a 1st embodiment. It is a top view of the light emitting device based on the 6th modification of 1st Embodiment. It is a top view of the light emitting device based on the 7th modification of 1st Embodiment. It is a top view of the light-emitting device based on the 8th modification of 1st Embodiment. FIG. 7 is a plan view of a light emitting device according to a sixth embodiment. FIG. 17A is a cross-sectional view taken along line AA in FIG. 17A. FIG. 17A is a diagram showing a light emitting state of the light emitting device shown in FIG. 17A. 18 is a diagram (part 1) showing a method for manufacturing the light emitting device shown in FIG. 17. FIG. FIG. 19A is a cross-sectional view taken along line AA in FIG. 19A. 18 is a diagram (Part 2) showing a method for manufacturing the light emitting device shown in FIG. 17. FIG. FIG. 20A is a cross-sectional view taken along line AA in FIG. 20A. FIG. 18 is a diagram (part 3) showing a method for manufacturing the light emitting device shown in FIG. 17; FIG. 21A is a cross-sectional view taken along line AA in FIG. 21A. 18 is a diagram (part 4) showing a method for manufacturing the light emitting device shown in FIG. 17. FIG. FIG. 22A is a cross-sectional view taken along line AA in FIG. 22A. 18 is a diagram (part 5) showing a method for manufacturing the light emitting device shown in FIG. 17. FIG. FIG. 23A is a cross-sectional view taken along line AA in FIG. 23A. 18 is a diagram (part 6) showing a method for manufacturing the light emitting device shown in FIG. 17. FIG. FIG. 24A is a cross-sectional view taken along line AA in FIG. 24A. FIG. 7 is a plan view of a light emitting device according to a seventh embodiment. FIG. 25A is a cross-sectional view taken along line BB in FIG. 25A. 26 is a diagram (part 1) showing a method for manufacturing the light emitting device shown in FIG. 25. FIG. FIG. 26A is a cross-sectional view taken along line BB in FIG. 26A. 26 is a diagram (part 2) showing a method for manufacturing the light emitting device shown in FIG. 25. FIG. FIG. 27A is a cross-sectional view taken along line BB in FIG. 27A. FIG. 7 is a plan view of a light emitting device according to an eighth embodiment. FIG. 28A is a cross-sectional view taken along line CC in FIG. 28A. FIG. 7 is a plan view of a light emitting device according to a ninth embodiment. FIG. 29A is a cross-sectional view taken along line DD in FIG. 29A. FIG. 7 is a plan view of a light emitting device according to a tenth embodiment. FIG. 30A is a cross-sectional view taken along line EE in FIG. 30A. FIG. 7 is a plan view of a light emitting device according to an eleventh embodiment. FIG. 31A is a cross-sectional view taken along line FF in FIG. 31A. FIG. 7 is a plan view of a light emitting device according to a twelfth embodiment. FIG. 32A is a cross-sectional view taken along line GG in FIG. 32A. FIG. 7 is a plan view of a light emitting device according to a thirteenth embodiment. FIG. 33A is a cross-sectional view taken along line HH in FIG. 33A. FIG. 7 is a plan view of a light emitting device according to a fourteenth embodiment. FIG. 34A is a cross-sectional view taken along line II in FIG. 34A. FIG. 7 is a plan view of a light emitting device according to a fifteenth embodiment. FIG. 35A is a cross-sectional view taken along line AA in FIG. 35A. FIG. 7 is a plan view of a light emitting device according to a sixteenth embodiment. FIG. 36A is a cross-sectional view taken along line BB in FIG. 36A. FIG. 7 is a plan view of a light emitting device according to a seventeenth embodiment. FIG. 37A is a cross-sectional view taken along line CC in FIG. 37A. FIG. 7 is a plan view of a light emitting device according to an eighteenth embodiment. FIG. 38A is a cross-sectional view taken along line DD in FIG. 38A. FIG. 7 is a plan view of a light emitting device according to a nineteenth embodiment. FIG. 39A is a sectional view taken along line CC in FIG. 39A. FIG. 2 is a plan view of an example of a surface-emitting SMD. 40A is a right side view of the surface emitting SMD shown in FIG. 40A. FIG. 40A is a back view of the surface-emitting SMD shown in FIG. 40A. FIG. FIG. 2 is a plan view of an example of a side-emitting SMD. 41A is a right side view of the side-emitting SMD shown in FIG. 41A. FIG. 41A is a back view of the side-emitting SMD shown in FIG. 41A. FIG. FIG. 2 is a diagram showing an example of a lighting device applicable to the light emitting device according to the embodiment. FIG. 3 is a diagram showing an example in which a light emitting device according to a comparative example is applied to a lighting device. FIG. 2 is a diagram showing an example in which the light emitting device according to the embodiment is applied to a lighting device.

Hereinafter, a preferred embodiment of the light emitting device will be described with reference to the drawings. However, the technical scope of the present disclosure is not limited to these embodiments, but extends to the inventions described in the claims and their equivalents.

In the following explanation, "LED (Light Emitting Diode) chip" refers to a semiconductor element formed by growing a semiconductor such as an InGaN compound, an InGaN compound, or a GaAsP compound as a light emitting layer on a substrate. say. The LED chip emits light of a predetermined emission wavelength by applying a predetermined voltage between an anode and a cathode arranged on the upper surface, the lower surface, or the upper surface and the lower surface. Semiconductor structures include homostructures such as MIS junctions, PI junctions, and PN junctions, heterostructures, double heterostructures, and the like. Various emission wavelengths can be selected depending on the material of the LED chip, growth temperature, etc. The wavelength of the light emitted by the LED chip will be explained in the corresponding embodiment.

Furthermore, an "LED package" is a component in which an "LED chip" is mounted on a substrate and the mounted "LED chip" is sealed with a resin or a resin containing a fluorescent material, or an "LED chip" component. It refers to a component whose top surface or top surface and side surfaces are coated with a resin containing a fluorescent material, and includes top-emitting SMDs (Surface Mounted Devices), side-emitting SMDs, etc. Here, the fluorescent material refers to a material that absorbs light of a predetermined wavelength emitted from the "LED chip" and emits light of a different wavelength. As a result, from the "LED package", the "LED chip" The light emitted from the fluorescent material is a mixture of the light emitted from the fluorescent material and the light emitted from the fluorescent material. Note that the "LED package" may be configured so that it does not contain a fluorescent material and the light of the wavelength output from the "LED chip" it contains is directly emitted.

Furthermore, the term "light emitting element" includes both forms of "LED chip" and "LED package", and refers to a device that emits light of a predetermined wavelength.

FIG. 1A is a plan view of the light emitting device 100 according to the first embodiment, and FIG. 1B is a cross-sectional view taken along line AA shown in FIG. 1A.

The light emitting device 100 includes a substrate 10 having a first region 17 and a second region 18 arranged around the first region 17, 16 LED chips 20, a sealing material 31, a reflective material 32, and a guide. It has a light material 33. The encapsulant 31 contains a fluorescent material 30 that absorbs light of a first color emitted from the LED chip 20 and emits light of a second color different from the first color. Contains no material 30. The sealing material 31 and the light guiding material 33 transmit the first color light emitted from the LED chip 20 and the second color light emitted from the fluorescent material 30, and the reflective material 32 transmits the first color light emitted from the fluorescent material 30. reflects light and light of a second color.

In the light emitting device 100, since the LED chip 20 is not arranged in the visible first region 17, there is no possibility that the LED chip 20 will be visually recognized as uneven brightness even during low brightness emission. Further, in the light emitting device 100, the sealing material 31 containing the fluorescent material 30 is covered with the reflective material 32, and the light guide material 33 not containing the fluorescent material 30 is arranged in the first region 17, so that when the light is turned off, the fluorescent material 31 is covered with the reflective material 32. The color is not visible from the outside, and there is no risk of deterioration in aesthetic appearance.

The substrate 10 includes a mounting board 11 , a circuit board 12 , an anode electrode 13 , a cathode electrode 14 , an anode wiring 15 , and a cathode wiring 16 . The mounting board 11 is a metal board with high thermal conductivity and reflectance, such as aluminum, and has a substantially rectangular planar shape. The mounting board 11 has a first region 17 having a substantially rectangular planar shape in the center, and a second region 18 along the outer periphery of the first region 17 . Both the front and back surfaces of the substrate 10 including the first region 17 and the second region 18 are flat. The mounting board 11 has a pair of diagonally arranged corners cut out.

The circuit board 12 is made of an insulating material such as an epoxy material, has the same planar shape as the mounting board 11, and is bonded to the mounting board 11. The circuit board 12 has an opening that surrounds the first region 17 and the second region 18 in which the 16 LED chips 20 are mounted.

The anode electrode 13, the cathode electrode 14, the anode wiring 15, and the cathode wiring 16 are wiring patterns formed of a conductive thin film of copper or the like on the opposite surface of the circuit board 12 to the surface facing the mounting board 11. The anode electrode 13 and the cathode electrode 14 are arranged near a corner where a notch is not formed. The anode electrode 13 and the cathode electrode 14 are connected to a power source (not shown), and supply power to each of the LED chips 20 via the anode wiring 15 and the cathode wiring 16.

Portions of the anode wiring 15 and the cathode wiring 16 that are not covered with the sealing material 31 and the reflective material 32 are covered with an insulating layer such as a resist. The anode wiring 15 is connected to the anode electrode 13 and also to one of the four light emitting elements arranged along each side of the first region 17 via a bonding wire 21. The cathode wiring 16 is connected to the cathode electrode 14 and also to one of the four light emitting elements arranged along each side of the first region 17 via a bonding wire 21.

The 16 LED chips 20 are semiconductor elements that emit blue light and are made of, for example, an InGaN-based compound semiconductor whose emitted light has a wavelength range of 440 nm to 455 nm. Each of the 16 LED chips 20 has a substantially rectangular planar shape, and it is preferable to use elements having substantially the same light emitting characteristics such as forward voltage (VF), temperature characteristics, and lifespan.

The 16 LED chips 20 are mounted on the second region 18 of the substrate 10 in groups of four along each side of the first region 17 so as to follow the outer periphery of the first region 17 . Four LED chips 20 mounted in the second region 18 along each side of the first region 17 are connected in series between the anode electrode 13 and the cathode electrode 14. The LED chips 20 are connected in such a manner that four light emitting element arrays each connected in series are connected in parallel.

Although 16 LED chips 20 are arranged in the light emitting device 100, the number of mounted LED chips 20 may be less than 16 or may be 17 or more. Furthermore, in the light emitting device 100, four LED chips 20 are connected in series, but the number of LED chips 20 connected in series may be less than three, or may be five or more. Further, in the light emitting device 100, four light emitting element columns are connected in parallel, but the number of light emitting element columns connected in parallel may be less than three, or may be five or more.

The sealing material 31 is a synthetic resin such as silicone resin containing the fluorescent material 30. The sealing material 31 is arranged along the outer periphery of the first region 17 so as to cover part of the anode wiring 15 and cathode wiring 16, as well as the LED chip 20 and bonding wire 21. The sealing material 31 has a frame-like planar shape surrounding the first region 17 .

The fluorescent material 30 contained in the sealing material 31 is a fluorescent material that absorbs blue light, which is the first color emitted from the LED chip 20, and emits light of a second color different from the first color. It is. The fluorescent material 30 is, for example, a selenium-activated YAG (yttrium aluminum garnet) fluorescent material that emits yellow light with a wavelength of 550 nm to 580 nm. In addition to the YAG-based fluorescent material that emits yellow light, the fluorescent material ³⁰ includes CaAlSiN ₃ (calcium・Aluminum silicone oxynitride) A fluorescent material may be added. Further, the fluorescent material 30 may include, for example, a YAG-based fluorescent material activated with cerium that emits green light having a peak wavelength range of 535 nm to 570 nm.

The fluorescent material 30 is a silicate-based fluorescent material activated with Eu ²⁺ (europium) or a barium silicone oxynitride fluorescent material that emits blue-green light with a peak wavelength range of 480 nm to 500 nm. There may be. Further, the fluorescent material 30 may be a CaAlSiN ₃ (calcium aluminum silicone oxynitride) fluorescent material containing Eu ²⁺ (europium) as a solid solution, which emits red light with a peak wavelength range of 600 nm to 630 nm. good. Furthermore, the fluorescent material 30 may include multiple types of fluorescent materials. By varying the proportions of the fluorescent materials contained in the fluorescent material 30, it is possible to provide light emitting devices with the same color temperature and different color rendering properties.

For example, fluorescent material 30 may be a europium-activated orthosilicate fluorescent material that emits yellow light with a peak wavelength of 550 nm to 580 nm. The fluorescent material 30 includes a europium-activated orthosilicate fluorescent material that emits yellow light and a europium-activated strontium aluminate fluorescent material that emits yellow light with a peak wavelength of 480 nm to 500 nm. May include. Furthermore, it may include a europium-activated orthosilicate fluorescent material that emits yellow light and a calcium-aluminum-silicon oxynitride fluorescent material containing europium solid solution that emits red light.

The reflective material 32 is a synthetic resin such as a silicone resin in which reflective fine particles such as titanium oxide are dispersed, and is used to absorb the first color light emitted from the LED chip 20 and the second color light emitted from the fluorescent material 30. It is a reflective material that reflects colored light. The reflective material 32 is arranged so as to cover at least a part of the upper part of the sealing material 31 and to surround the first region 17 . Similar to the sealing material 31, the reflective material 32 has a frame-like planar shape surrounding the first region 17.

The reflective material 32 is formed along the light guide material 33 so as to cover the upper side of the sealing material 31 and the side opposite to the first region 17 . Therefore, an opening 90 made of the reflective material 32 is formed on the first region 17 side of the sealing material 31. The first color light emitted from the plurality of LED chips 20 and the second color light emitted from the fluorescent material 30 are reflected by the reflective material 32 and emitted from the opening 90 to the light guide material 33 .

The light guide material 33 does not contain the fluorescent material 30 and is made of a synthetic resin such as silicone resin, and is capable of transmitting the first color light emitted from the LED chip 20 and the second color light emitted from the fluorescent material 30. Transparent. The light guide material 33 guides the first color light emitted from the LED chip 20 and the second color light emitted from the fluorescent material 30 to the first region 17 . The light guided to the first region 17 is emitted to the outside from the entire upper surface of the first region 17, either directly or by reflection. That is, in the light emitting device 100, when the LED chip 20 is lit, the entire upper surface of the first region 17 emits surface light. By increasing the refractive index of the light guide material 33, it is possible to emit surface light without uneven brightness.

FIG. 2 is a diagram showing a light emitting state of the light emitting device 100. FIG. 2 is a cross-sectional view taken along line AA shown in FIG. 1A. In FIG. 2 , a dashed-dotted arrow line indicates the optical path of light emitted from the LED chip 20 .

The first color light emitted from the LED chip 20 is reflected by the reflective material 32 that covers the sealing material 31 and is transmitted from the light emitting device 100 to the outside via the first region 17 where the light guide material 33 is arranged. It is emitted. Further, a part of the first color light emitted from the LED chip 20 is absorbed by the fluorescent material 30 contained in the sealing material 31 and is emitted from the fluorescent material 30 as second color light.

A method for manufacturing the light emitting device 100 will be explained using FIGS. 3 to 7. 3 shows the first step, FIG. 4 shows the second step, FIG. 5 shows the third step, FIG. 6 shows the fourth step, and FIG. 7 shows the fifth step. In FIGS. 3 to 7, drawing A is a plan view, and drawing B is a sectional view corresponding to the sectional view taken along line AA shown in FIG. 1A.

In a first step, a substrate 10 is provided. Next, in a second step, 16 LED chips 20 are mounted in the second region 18 along the outer periphery of the first region 17. The 16 LED chips 20 are mounted four by four along one side of the first region 17 by die bonding (not shown). Next, in a third step, 16 LED chips 20 are connected in series between the anode wiring 15 and the cathode wiring 16 by four bonding wires 21 . The LED chip 20 disposed at one end of the four LED chips 20 mounted along one side of the first region 17 is connected to the anode wiring 15 via a bonding wire 21. Further, the LED chip 20 disposed at the other end of the four LED chips 20 mounted along one side of the first region 17 is connected to the cathode wiring 16 via a bonding wire 21.

Next, in a fourth step, a sealing material 31 is placed to cover the LED chip 20 and bonding wires 21. Next, in the fifth step, the reflective material 32 is placed so as to cover the sealing material 31 and surround the first region 17 . The reflective material 32 is arranged so that an opening 90 is formed along the first region 17 . Then, in the sixth step, the light guide material 33 is placed in the first region 17 surrounded by the reflective material 32, and the manufacturing process of the light emitting device 100 is completed.

The sealing material 31, the reflecting material 32, and the light guiding material 33 may be made of a resin material with high thixotropy. When using a resin material with high thixotropy as the encapsulant 31, the reflective material 32, and the light guide material 33, even if the encapsulant 31, the reflective material 32, and the light guide material 33 are solidified all at once after the sixth step. good. Furthermore, when using a resin material with low thixotropy as the sealing material 31, the reflecting material 32, and the light guiding material 33, in each of the fourth to sixth steps, the sealing material 31, the reflecting material 32, and the light guiding material are 33 is solidified separately.

In the light emitting device 100, the LED chip 20 is not arranged in the first region 17 that is visible from the outside, so there is no risk that the LED chip 20 will be visually recognized as brightness unevenness, also called a hot spot, during low brightness light emission. Furthermore, since there is no risk of the LED chip 20 being visually recognized as uneven brightness, a diffusing material is not included in the light guide material 33 to prevent uneven brightness, and by including the diffusing material, the luminous efficiency is increased. There will be no decline.

In addition, since there is no possibility that brightness unevenness will occur in the light emitting device 100, high brightness illumination can be realized in a light emitting device such as a lighting device in which the light emitting device 100 is mounted, without controlling brightness unevenness.

Further, in the light emitting device 100, the sealing material 31 containing the fluorescent material 30 is covered with the reflective material 32, and the light guide material 33 not containing the fluorescent material 30 is arranged in the first region 17, so that when the light is turned off, the fluorescent material 31 is covered with the reflective material 32. The color is not visible from the outside, and there is no risk of deterioration in aesthetic appearance.

Furthermore, in the light emitting device 100, all of the 16 LED chips 20 are mounted on the single mounting board 11, so the temperature changes of all the 16 LED chips 20 are interlocked with each other, and the light emission depends on the temperature characteristics. There is a low possibility that the characteristics will vary from one another.

Furthermore, in the light emitting device 100, since the light guide material 33 that functions as a light guide is arranged in the first region 17, it is possible to emit light without uneven brightness.

FIG. 8A is a plan view of the light emitting device 101 according to the second embodiment, and FIG. 8B is a cross-sectional view taken along line BB shown in FIG. 8A.

The light emitting device 101 is different from the light emitting device 100 in that it has a first encapsulant 34 and a second encapsulant 35 instead of the encapsulant 31. In the light emitting device 101, the same components as those in the light emitting device 100 are denoted by the same reference numerals, and description thereof will be omitted.

The first sealing material 34 is arranged at a different position from the sealing material 31. The configuration and function of the first sealing material 34 other than the position where it is arranged are the same as those of the sealing material 31, so detailed description thereof will be omitted here. The first sealing material 34 is not arranged to cover the LED chip 20 but is arranged between the first region 17 and the LED chip 20.

Like the light guide material 33, the second sealing material 35 does not contain the fluorescent material 30 and is made of synthetic resin such as silicone resin. The second encapsulant 35 is arranged to cover the LED chip 20 and the first encapsulant 34. The reflective material 32 is formed to cover the upper side of the first sealing material 34, the upper side of the second sealing material 35, and the side opposite to the first region 17.

In the light emitting device 101, the first sealing material 34 disposed between the first region 17 and the LED chip 20 contains the fluorescent material 30, so that a part of the light emitted from the LED chip 20 is The light is absorbed by the fluorescent material 30 contained in the first sealing material 34 before being emitted to the first region 17 . In response to a portion of the light emitted from the LED chip 20 being absorbed by the fluorescent material 30, second color light is emitted from the fluorescent material 30. The first color light and the second color light are emitted from the light guide material 33 to the outside via the first region 17.

The method for manufacturing the light emitting device 101 includes placing the second encapsulant 35 at the position where the first encapsulant 34 is disposed and between the step of disposing the first encapsulant 34 and the step of disposing the reflective material 32. The method for manufacturing the light emitting device 100 differs from the method for manufacturing the light emitting device 100 in that it includes a step of arranging. The method of manufacturing the light emitting device 101 other than the step of arranging the second sealing material 35 is the same as the method of manufacturing the light emitting device 100, so a detailed explanation will be omitted here.

In the light emitting device 101, the first encapsulant 34 is placed between the first region 17 and the LED chip 20, so that the first color light and the second color light are separated immediately before entering the first region 17. It can be mixed with light and emitted. Since the light emitting device 101 mixes and emits the first color light and the second color light immediately before entering the first region 17, it is easier to adjust the chromaticity than the light emitting device 100. .

Further, in the light emitting device 101, the first sealing material 34 containing the fluorescent material 30 is covered with the reflective material 32, and the light guide material 33 not containing the fluorescent material 30 is arranged in the first region 17, so when the light is turned off, The color of the fluorescent material is not visible from the outside, and there is no risk of deterioration in aesthetic appearance.

9A is a plan view of the light emitting device 102 according to the third embodiment, and FIG. 9B is a sectional view taken along line CC shown in FIG. 9A.

The light emitting device 102 differs from the light emitting device 100 in that it has a substrate 40 instead of the substrate 10. In the light-emitting device 102, the same components as those in the light-emitting device 100 are given the same reference numerals, and description thereof will be omitted.

The board 40 differs from the board 10 in that it has a mounting board 41 instead of the mounting board 11. The configurations and functions of the components of the board 40 other than the mounting board 41 are the same as those of the components of the board 10 denoted by the same reference numerals, so detailed explanations will be omitted here.

The mounting board 41 differs from the mounting board 11 in that it has a first region 47 instead of the first region 17 . The configurations and functions of the components of the mounting board 41 other than the first region 47 are the same as those of the components of the mounting board 11 denoted by the same reference numerals, so detailed explanations will be omitted here. The first region 47 differs from the first region 17 in that it is textured.

The method for manufacturing the light emitting device 102 is the same as the method for manufacturing the light emitting device 100, except for using the mounting substrate 41 whose first region 47 is textured, so a detailed explanation will be omitted here. Note that the texture of the first region 47 is formed by etching, for example, with regions other than the first region 47 of the mounting board 41 being masked.

In the light emitting device 102, the first region 47 is textured, so the first and second color lights incident on the first region 47 are diffused in the first region 47, and the colors are mixed more than in the light emitting device 100. It is possible to emit light of the first and second colors in a state in which the light of the first and second colors is maintained.

FIG. 10A is a plan view of a light emitting device 103 according to the fourth embodiment, and FIG. 10B is a cross-sectional view taken along line DD shown in FIG. 10A.

The light emitting device 103 differs from the light emitting device 100 in that it has a light guide material 36 instead of the light guide material 33. In the light emitting device 103, the same components as those in the light emitting device 100 are given the same reference numerals, and description thereof will be omitted.

The light guide material 36 differs from the light guide material 33 in that its surface is dimpled. The structure and function of the light guide material 36 other than that the surface is dimpled are the same as the structure and function of the light guide material 33 to which the same reference numerals are attached, so a detailed description thereof will be omitted here.

The method for manufacturing the light emitting device 103 is the same as the method for manufacturing the light emitting device 100, except that dimple processing is performed on the surface of the light guide material 36 after the light guide material 36 is arranged, so detailed explanation will be omitted here. do. Note that the dimple processing on the surface of the light guide material 36 is formed by, for example, performing laser processing on the surface of the light guide material 36.

In the light emitting device 103, the surface of the light guide material 36 is dimpled, so that the first and second color lights incident on the surface of the light guide material 36 are diffused on the surface of the light guide material 36 and emit light. It is possible to emit light of the first and second colors in a more mixed state than in the device 100.

Furthermore, in the light emitting device 103, the mounting substrate 41 having the first region 47 subjected to the texture processing described in the light emitting device 102 may be used instead of the mounting substrate 11.

FIG. 11A is a plan view of the light emitting device 104 according to the fifth embodiment, and FIG. 11B is a cross-sectional view taken along line EE shown in FIG. 11A.

The light emitting device 104 differs from the light emitting device 100 in that it has a sealant 37 instead of the sealant 31. Further, the light emitting device 104 is different from the light emitting device 100 in that it has a first LED chip 51, a second LED chip 52, and a third LED chip 53 instead of the LED chip 20. In the light emitting device 104, the same components as those in the light emitting device 100 are denoted by the same reference numerals, and description thereof will be omitted.

The encapsulant 37 differs from the encapsulant 31 in that it does not contain the fluorescent material 30. The configuration and function of the encapsulant 37 other than the fact that it does not contain the fluorescent material 30 are the same as those of the encapsulant 31, so detailed description thereof will be omitted here. The sealing material 37 is arranged to cover each of the first LED chip 51, the second LED chip 52, and the third LED chip 53.

Like the LED chip 20, the first LED chip 51 is a semiconductor element that emits blue light in the wavelength range of 440 nm to 455 nm, and is designated with the letter "B" in FIG. 11A. The second LED chip 52 is a semiconductor element that emits green light and is made of an InGaN-based compound semiconductor or the like with an emitted light wavelength range of 505 nm to 555 nm, and is labeled with the letter "G" in FIG. 11A. The third LED chip 53 is a semiconductor element that emits red light and is made of a GaAsP-based compound semiconductor or the like and whose emitted light has a wavelength range of 620 nm to 750 nm, and is labeled with the letter "R" in FIG. 11A.

The blue color emitted by the first LED chip 51 is an example of the first color of light, the green color emitted by the second LED chip 52 is an example of the second color light, and the red color emitted by the third LED chip 53 is an example of the second color light. This is an example of the light of 3.

The method for manufacturing the light emitting device 104 is the same as the method for manufacturing the light emitting device 100, except that the first LED chip 51, the second LED chip 52, and the third LED chip 53 are mounted instead of the LED chip 20, so a detailed explanation will be given here. is omitted.

In the light emitting device 104, the first LED chip 51, the second LED chip 52, and the third LED chip 53 are not arranged in the visible first area 17, so even during low-brightness light emission, the first LED chip 51, the second LED chip 52, and the third LED chip 53 are not disposed in the visible first area 17. There is no possibility that the 3 LED chips 53 will be visually recognized as uneven brightness.

Further, in the light emitting device 104, the first LED chip 51, the second LED chip 52, and the third LED chip 53 are not arranged in the visible first region 17, the sealing material 37 does not contain the fluorescent material 30, and the fluorescent material 30 Since the light guide material 33 containing no fluorescent material is disposed in the first region 17, the color of the fluorescent material is not visible from the outside when the light is turned off, and there is no risk of deterioration in aesthetic appearance.

If the third LED chip 53 is a GaAS-based red light emitting semiconductor element with poor temperature characteristics, if it is mounted on the same mounting board as the first LED chip 51 which is a blue light emitting semiconductor element, the heat generation of the first LED chip 51 will be reduced. There is a possibility that you may be affected. Therefore, in the light emitting device 104, the third LED chip 53 is replaced with an LED package in which the periphery of the blue light emitting semiconductor element is sealed with a resin containing a red fluorescent material that absorbs blue light and emits red light. Also good. By using such an LED package, it is possible to make the effect of temperature increase the same between chips or packages that emit light of each color.

Furthermore, in the light emitting device 104, the second LED chip 52 is replaced with a first LED package in which the periphery of the blue light emitting semiconductor element is sealed with a resin containing a green fluorescent material that absorbs blue light and emits green light, and the third LED The chip 53 may be replaced with a second LED package in which the periphery of the blue light-emitting semiconductor element is sealed with a resin containing a red fluorescent material that absorbs blue light and emits red light. Even in this case, since the first LED chip 51, the first LED package, and the second LED package are covered with the reflective material 32, the color of the fluorescent material is not visible from the outside when the lights are turned off, and there is no risk of degrading the aesthetic appearance.

In the light emitting device 104, instead of the mounting substrate 11, the mounting substrate 41 having the textured first region 47 described in the light emitting device 102 may be used. Further, in the light emitting device 104, the light guide material 36 whose surface is dimpled as described in the light emitting device 103 may be used instead of the light guide material 33. Furthermore, the light emitting device 104 may use both the mounting substrate 41 having the first region 47 subjected to the texture process and the light guide material 36 having the dimpled surface.

12A is a sectional view of a light emitting device 105 according to a first modification of the light emitting device 100, FIG. 12B is a sectional view of a light emitting device 106 according to a second modification of the light emitting device 100, and FIG. 12C is a sectional view of a light emitting device 105 according to a second modification of the light emitting device 100. It is a sectional view of the light emitting device 107 concerning the 3rd modification. 12A to 12C are cross-sectional views corresponding to the cross-sectional view taken along line AA shown in FIG. 1A.

Each of the light emitting devices 105 to 107 is different from the light emitting device 100 in that each of the light emitting devices 105 to 107 includes a filler 38 disposed between the sealing material 31 and the reflective material 32. In the light emitting devices 105 to 107, the same components as the light emitting device 100 are given the same reference numerals, and the description thereof will be omitted.

Similar to the light guide material 33, the filler material 38 is a synthetic resin such as silicone resin that does not contain the fluorescent material 30, and is arranged so as to cover the sealant material 31. In the light emitting device 105, the filler 38 is arranged so as to cover the entire surface of the sealing material 31. In the light emitting device 106 , the filler 38 is arranged to cover the surface of the encapsulant 31 excluding the surface in contact with the light guide material 33 , and in the light emitting device 107 , the filler 38 is arranged to cover the light guide material of the encapsulant 31 . It is arranged so as to cover all surfaces except the surface opposite to the surface in contact with 33.

In the light emitting devices 103 and 104 described above, a filler may be placed between the sealing material 31 and the reflective material 32, similarly to the light emitting devices 105 to 107 described above. By arranging the filler between the encapsulant 31 and the reflective material 32, the amount of light absorbed by the reflective material 32 out of the light emitted from the LED chip 20 and the encapsulant 31 can be reduced. , light can be efficiently guided to the first region 17.

13A is a cross-sectional view of a light-emitting device 108 according to a fourth modification of the light-emitting device 100, and FIG. 13B is a cross-sectional view of a light-emitting device 109 according to a fifth modification of the light-emitting device 100. 13A and 13B are cross-sectional views corresponding to the cross-sectional view taken along line AA shown in FIG. 1A.

Each of the light emitting devices 108 and 109 is different from the light emitting device 100 in that each of the light emitting devices 108 and 109 includes a diffusion layer 39 disposed to cover the light guide material 33. In the light emitting devices 108 and 109, the same components as those in the light emitting device 100 are given the same reference numerals, and the description thereof will be omitted.

The diffusion layer 39 is made of a synthetic resin such as a silicone resin containing a filler made of silica, titanium oxide, etc., and is arranged to cover the light guide material 33 . In the light emitting devices 108 and 109, the diffusion layer 39 is arranged to cover the entire surface of the light guide material 33. Note that in the light emitting device 109, the light guide material 33 is arranged to cover the sealing material 31 in addition to the first region 17.

In the light emitting devices 101 to 107 described above, a diffusion layer may be disposed on the light guide material 33 or 36, similarly to the light emitting devices 108 and 109 described above. By arranging the diffusion layer on the light guide material 33 or 36, uneven brightness can be further reduced.

14 is a plan view of a light emitting device 110 according to a sixth modification of the light emitting device 100, FIG. 15 is a plan view of a light emitting device 111 according to a seventh modification of the light emitting device 100, and FIG. It is a top view of the light emitting device 112 based on the 8th modification. A cross-sectional view of the light emitting devices 110 to 112 taken along line AA is similar to FIG. 1B.

Each of the light emitting devices 110 to 112 differs from the light emitting device 100 in that each of the light emitting devices 110 to 112 has a first encapsulant 81 and a second encapsulant 82 instead of the encapsulant 31. In the light emitting devices 110 to 112, the same components as those in the light emitting device 100 are given the same reference numerals, and description thereof will be omitted.

The first encapsulant 81 is a synthetic resin such as silicone resin containing a europium-activated orthosilicate fluorescent material that absorbs light emitted from the LED chip 20 and emits yellow light. In this case, when light is emitted from the LED chip 20, the blue light emitted from the LED chip 20 and the yellow light emitted from the fluorescent material contained in the first sealing material 81 are mixed. For example, cool white light having a color temperature of 6500K is emitted from the first sealing material 81.

The first encapsulant 81 is silicone containing a cerium-activated YAG (yttrium aluminum garnet) fluorescent material that absorbs light emitted from the LED chip 20 and emits yellow light. It may also be a synthetic resin such as resin. In this case, when light is emitted from the LED chip 20, the blue light emitted from the LED chip 20 and the yellow light emitted from the fluorescent material contained in the first sealing material 81 are mixed. For example, cool white light having a color temperature of 6500K is emitted from the first sealing material 81.

The second encapsulant 82 is a cerium-activated YAG (yttrium aluminum garnet) fluorescent material that absorbs the light emitted from the LED chip 20 and emits yellow light, and a YAG (yttrium aluminum garnet) fluorescent material that emits red light. It is a synthetic resin such as a silicone resin containing a CaAlSiN ₃ fluorescent material containing europium as a solid solution. For example, when light is emitted from the LED chip 20, the blue light emitted from the LED chip 20 and the green and red light emitted from the fluorescent material contained in the second sealing material 82 are mixed. Warm white light with a color temperature of 2700K is emitted from the second encapsulant 82).

The second encapsulant 82 is made of a cerium-activated YAG fluorescent material that absorbs the light emitted from the LED chip 20 and emits green light, and a europium solid solution that emits red light. A synthetic resin such as a silicone resin containing CaAlSiN ₃ fluorescent material may also be used. For example, when light is emitted from the LED chip 20, the blue light emitted from the LED chip 20 and the green and red light emitted from the fluorescent material contained in the second sealing material 82 are mixed. Warm light having a color temperature of 2700K is emitted from the first sealing material 81.

In the light emitting device 110, each of the pair of first encapsulants 81 and the pair of second encapsulants 82 is arranged on a pair of opposing sides so as to extend parallel to each other. In the light emitting device 111, each of the first pair of sealants 81 and the pair of second sealants 82 is arranged so as to extend in a direction perpendicular to each other on a pair of adjacent sides. In the light emitting device 112, each of the first encapsulant 81 and the second encapsulant 82 is arranged so as to extend to a pair of adjacent sides.

Note that in the light emitting devices 110 to 112, all 16 LED chips 20 are connected to an anode electrode 13 and a cathode electrode 14, which are a pair of electrode pairs, but the LED chips 20 are connected to two pairs of electrodes. It's okay. When the LED chip 20 is connected to two electrode pairs, the LED chip 20 sealed with the first sealing material 81 is connected to one electrode pair, and the second sealing material is connected to the other electrode pair. The LED chip 20 sealed by 82 is connected.

Furthermore, in the light emitting devices 101 to 103 and 105 to 109, the encapsulant 31 or the encapsulant 34 contains the same fluorescent material 30; It may contain different fluorescent materials depending on the situation.

FIG. 17A is a plan view of a light emitting device 113 according to the sixth embodiment, and FIG. 17B is a cross-sectional view taken along line AA shown in FIG. 17A.

The light emitting device 113 is different from the light emitting device 100 in the configurations of a sealing material 231, a reflective material 232, a light guiding material 233, and a diffusion layer 234. In the light emitting device 113, the same components as those in the light emitting device 100 are given the same reference numerals, and the description thereof will be omitted.

The light emitting device 113 includes a substrate 10 having a first region 17 and a second region 18 arranged around the first region 17, 16 LED chips 20, a sealing material 231, a reflective material 232, and a guide. It has a light material 233 and a diffusion layer 234. The encapsulant 231 contains a fluorescent material 30 that absorbs the first light having the first wavelength emitted from the LED chip 20 and emits the second light having a second wavelength different from the first wavelength. 233 does not contain fluorescent material 30. The sealing material 231 and the light guiding material 233 transmit the first light emitted from the LED chip 20 and the second light emitted from the fluorescent material 30, and the reflecting material 232 reflects the first light and the second light. The light guide material 233 is arranged so that its outer edge overlaps the sealing material 231 when viewed in plan.

In the light emitting device 113, the LED chip 20 is not arranged in the first region 17 that is visible from the outside, so there is no possibility that the LED chip 20 will be visually recognized as uneven brightness. Further, in the light emitting device 113, the sealing material 231 containing the fluorescent material 30 is covered with the reflective material 232, and the light guide material 233 not containing the fluorescent material 30 is arranged in the first region 17, so that when the light is turned off, the fluorescent material 231 is covered with the reflective material 232. The color is not visible from the outside, and there is no risk of deterioration in aesthetic appearance.

Furthermore, in the light emitting device 113 , the light guiding material 233 is arranged so that the outer edge overlaps the sealing material 231 when the substrate 10 is viewed from above, so that the light is emitted from the LED chip 20 and reflected by the reflecting material 232 . Since the emitted light is emitted to the first region 17, the luminous efficiency can be increased.

The sealing material 231 is a synthetic resin such as silicone resin containing the fluorescent material 30. The sealing material 231 is arranged along the outer periphery of the first region 17 so as to cover part of the anode wiring 15 and cathode wiring 16, as well as the LED chip 20 and bonding wire 21. The sealing material 231 has a frame-like planar shape surrounding the first region 17 .

The fluorescent material 30 contained in the sealing material 231 absorbs the light emitted from the LED chip 20 and absorbs the light emitted from the LED chip 20 to form a second wavelength having a second wavelength different from the first wavelength of the light emitted from the LED chip 20. It is a phosphor that emits light. The fluorescent material 30 is, for example, a selenium-activated YAG (yttrium aluminum garnet)-based phosphor that emits yellow light with a wavelength of 550 nm to 580 nm. In addition to the YAG-based phosphor that ^emits yellow light, the fluorescent material 30 also includes CaAlSiN ₃ (calcium・Aluminum silicone oxynitride) may be added with a phosphor. Further, the fluorescent material 30 may be doped with a YAG-based phosphor activated with cerium that emits green light having a peak wavelength range of 535 nm to 570 nm, for example.

The fluorescent material 30 is a silicate-based phosphor activated with Eu ²⁺ (europium) or a barium silicone oxynitride phosphor that emits blue-green light with a peak wavelength range of 480 nm to 500 nm. There may be. Further, the fluorescent material 30 may be a CaAlSiN ₃ (calcium aluminum silicone oxynitride) phosphor containing Eu ²⁺ (europium) as a solid solution, which emits red light with a peak wavelength range of 600 nm to 630 nm. good. Furthermore, the fluorescent material 30 may include multiple types of phosphors. By varying the proportions of the phosphors contained in the fluorescent material 30, it is possible to provide light emitting devices with the same color temperature and different color rendering properties.

For example, the fluorescent material 30 may be a europium-activated orthosilicate phosphor that emits yellow light with a peak wavelength of 550 nm to 580 nm. The fluorescent material 30 includes a europium-activated orthosilicate phosphor that emits yellow light and a europium-activated strontium aluminate phosphor that emits yellow light with a peak wavelength of 480 nm to 500 nm. May include. Furthermore, it may include a europium-activated orthosilicate phosphor that emits yellow light and a calcium-aluminum-silicon oxynitride phosphor containing europium solid solution that emits red light.

The reflective material 232 is a synthetic resin such as a silicone resin in which reflective fine particles such as titanium oxide are dispersed, and reflects blue light emitted from the LED chip 20 and emitted from the fluorescent material 30 contained in the sealing material 231. reflects yellow light. The reflective material 232 is arranged so as to cover part of the anode wiring 15 and the cathode wiring 16 and surround the first region 17 . The reflective material 232 has a frame-like planar shape surrounding the first region 17 .

The reflective material 232 is formed along the light guide material 233 so as to cover the upper side of the sealing material 231 and the side opposite to the first region 17 . Therefore, an opening 90 made of the reflective material 232 is formed on the first region 17 side of the sealing material 231 . The first color light emitted from the plurality of LED chips 20 and the second color light emitted from the fluorescent material 30 are reflected by the reflective material 232 and emitted from the opening 90 to the light guide material 233 .

The light guiding material 233 is a synthetic resin such as silicone resin that does not contain the fluorescent material 30, and propagates to the first region 17 while transmitting the light emitted from the sealing material 231. The light guide material 233 is arranged adjacent to the opening 90 in the first region 17 surrounded by the reflective material 232 so that its outer edge overlaps the sealing material 231 when the substrate 10 is viewed from above. The height of the light guiding material 233 is highest at the center of the first region 17 and gradually decreases toward the outer edge of the light emitting region. The light guiding material 233 preferably has high thixotropy.

The refractive index of the light guide material 233 is, for example, 1.46. Since the light guide material 233 has a higher refractive index than the diffusion layer 234, the critical angle between the light guide material 233 and the diffusion layer increases, and the light emitted from the sealing material 231 is directed to the light guide material 233. Total reflection is likely to occur between the light and the diffusion layer 234. The light emitted from the sealing material 231 is easily totally reflected between the light guide material 233 and the diffusion layer 234, so that it is guided to the center of the light emitting area inside the light guide material 233, and the light is emitted from the light emitting device. 113 is capable of surface emitting light without uneven brightness.

The diffusion layer 234 is made of a synthetic resin such as a silicone resin containing a filler made of silicon dioxide or the like and titanium oxide, and has a substantially rectangular planar shape. The refractive index of the diffusion layer 234 is, for example, 1.41.

The height of the surface of the diffusion layer 234 is approximately equal to the height of the reflective material 232, and has an approximately uniform height over the entire surface. Since the surface of the diffusion layer 234 has a substantially uniform height and the height of the light guide 233 gradually decreases from the center to the outer edge of the first region 17, the thickness of the diffusion layer 234 is The center portion of the first region 17 is the thinnest, and the thickness gradually increases toward the outer edge of the first region 17.

The diffusion layer 234 improves color mixing by diffusing the light emitted from the sealing material 231 and guided by the light guide material 233. The diffusion layer 234 is arranged to cover the light guide material 233 in the first region 17 surrounded by the reflective material 232, and directs the light emitted from the sealing material 231 and guided by the light guide material 233 to the first region. 17, the light is emitted from the upper surface and emitted to the outside.

FIG. 18 is a diagram showing a light emitting state of the light emitting device 113. FIG. 18 is a cross-sectional view taken along line AA shown in FIG. 17A. In FIG. 18 , a dashed-dotted arrow line indicates the optical path of light emitted from the LED chip 20 .

The blue light emitted from the LED chip 20 is reflected by the reflective material 232 covering the encapsulant 231 and is emitted from the light emitting device 113 to the outside via the first region 17 where the light guiding material 233 and the diffusion layer 234 are arranged. It is emitted to Further, a part of the blue light emitted from the LED chip 20 is absorbed by the fluorescent material 30 contained in the sealing material 231 and is emitted from the fluorescent material 30 as yellow light.

A method for manufacturing the light emitting device 113 will be described using FIGS. 19 to 24. 19 shows the first step, FIG. 20 shows the second step, FIG. 21 shows the third step, FIG. 22 shows the fourth step, FIG. 23 shows the fifth step, and FIG. 24 shows the sixth step. Show the process. In FIGS. 19 to 24, drawing A is a plan view, and drawing B is a sectional view corresponding to the sectional view taken along line AA shown in FIG. 17A.

In a first step, a substrate 10 is provided. Next, in a second step, 16 LED chips 20 are mounted in the second region 18 along the outer periphery of the first region 17. The 16 LED chips 20 are mounted along one side of the first region 17 in groups of four. Next, in a third step, 16 LED chips 20 are connected in series between the anode wiring 15 and the cathode wiring 16 by four bonding wires 21 . The LED chip 20 disposed at one end of the four LED chips 20 mounted along one side of the first region 17 is connected to the anode wiring 15 via a bonding wire 21. Further, the LED chip 20 disposed at the other end of the four LED chips 20 mounted along one side of the first region 17 is connected to the cathode wiring 16 via a bonding wire 21.

Next, in a fourth step, a sealing material 231 is placed to cover the LED chip 20 and bonding wires 21. First, the unsolidified resin of the sealing material 231 containing the fluorescent material 30 is placed so as to cover the LED chip 20 and the bonding wire 21 . Next, by heating the substrate 10, the resin before solidification of the sealing material 231 is solidified, thereby forming the sealing material 231.

Next, in the fifth step, the light guiding material 233 is placed in the first region 17 so as to cover the inner wall of the sealing material 231. The resin of the light guide material 233 before solidification is arranged to cover the top and inner wall of the sealing material 231. First, the resin of the light guide material 233 before solidification is arranged in a mountain shape whose height decreases from the center of the first region 17 toward the outer edge. By using a resin with high thixotropy before solidification, the light guide material 233 can be arranged in a mountain shape with a top in the center. Next, by heating the substrate 10, the unsolidified resin of the light guide material 233 is solidified, thereby forming the light guide material 233.

Next, in the sixth step, the reflective material 232 is arranged along the first region 17 so as to cover the entire surface of the sealing material 231 and the outer edge of the light guide material 233 . First, the resin of the reflective material 232 before solidification is placed so as to cover the sealing material 231 . Next, by heating the substrate 10, the resin before solidification of the reflective material 232 is solidified, thereby forming the reflective material 232.

Next, in a seventh step (not shown), the diffusion layer 234 is placed inside the reflective material 232 so as to cover the light guide material 233. First, the resin of the diffusion layer 234 before solidification is placed inside the reflective material 232 so as to have a substantially uniform surface height and cover the light guide material 233 . Next, by heating the substrate 10, the resin before solidification of the diffusion layer 234 is solidified, thereby forming the diffusion layer 234, and the manufacturing process of the light emitting device 113 is completed.

In the light emitting device 113, the LED chip 20 is not arranged in the first region 17 that is visible from the outside, so there is no risk that the LED chip 20 will be visually recognized as uneven brightness, also called a hot spot. In addition, since there is no possibility that brightness unevenness will occur in the light emitting device 113, high brightness illumination can be realized in a light emitting device such as a lighting fixture in which the light emitting device 113 is mounted, without controlling brightness unevenness.

Further, in the light emitting device 113 , the sealing material 231 containing the fluorescent material 30 is covered with a reflective material 232 that is a reflective material, and the light guide material 233 not containing the fluorescent material 30 is arranged in the first region 17 . In the light emitting device 113, since the fluorescent material 30 is not arranged in the first region 17, the color of the fluorescent material is not visible from the outside when the light is turned off, and there is no risk of deterioration in aesthetic appearance.

In addition, in the light emitting device 113, all of the 16 LED chips 20 are mounted on the single mounting board 11, so the temperature changes of all the 16 LED chips 20 are linked to each other, and the light emission depends on the temperature characteristics. There is a low possibility that the characteristics will vary from one another.

Furthermore, in the light emitting device 113, since the light guide material 233 functioning as a light guide is arranged in the first region 17, it is possible to emit light without uneven brightness. In addition, in the light emitting device 1, since the light guide material 233 has a higher refractive index than the diffusion layer 234, light is guided to the center of the light emitting area inside the light guide material 233, and the light emitting device 1 can be used evenly on the surface of the light emitting region. It can be made to emit light.

Furthermore, in the light emitting device 113, the thickness of the diffusion layer 234 is the thinnest at the center of the first region 17 and gradually increases toward the outer edge of the first region 17. , which transmits light more easily than the outer edge of the first region 17. In the light emitting device 113, the LED chips 20 are arranged so as to surround the outer periphery of the first region 17, so that the center part of the first region 17 receives more light from the LED chips 20 than the outer edge of the first region 17. The amount of light is low. In the light emitting device 113, by making the thickness of the diffusion layer 234 thinner at the center of the first region 17 than at the outer edge of the first region 17, the thickness at the center of the first region 17 due to the distance from the LED chip 20 is reduced. It is possible to suppress the occurrence of brightness unevenness between the portion and the outer edge.

25A is a plan view of the light emitting device 114 according to the seventh embodiment, and FIG. 25B is a sectional view taken along line BB shown in FIG. 25A.

The light emitting device 114 differs from the light emitting device 113 in that it has a frame member 235 and a shielding member 236 instead of the reflective material 232, and a diffusion layer 237 instead of the diffusion layer 234. In the light emitting device 114, the same components as those in the light emitting device 113 are given the same reference numerals, and the description thereof will be omitted.

Like the reflective material 232, the frame member 235 is made of a synthetic resin such as silicone resin in which reflective particles such as titanium oxide are dispersed, and has a height that is greater than the height of the light guide material 233 and the shielding member 236. It is arranged so as to surround the reflective material 236 and has a frame-like planar shape.

Similar to the reflective material 232, the shielding member 236 is made of a synthetic resin such as silicone resin in which reflective fine particles such as titanium oxide are dispersed, and reflects the light emitted from the LED chip 20 and the fluorescent material 30. Further, the shielding member 236 has a lower content of reflective fine particles than the reflective material 232 and the frame member 235, and transmits a portion of the light emitted from the LED chip 20 and the fluorescent material 30. The transmittance of the shielding member 236 is preferably 30% or more and 70% or less, and more preferably 40% or more and 60% or less. Since the shielding member 236 transmits a portion of the light emitted from the LED chip 20 and the fluorescent material 30, the occurrence of uneven brightness above the shielding member 236 is suppressed.

In the light emitting device 114, the frame member 235 and the shielding member 236 serve as the reflective material 232 of the light emitting device 113. That is, the frame member 235 and the shielding member 236 are arranged above the sealing material 231 and on the opposite side of the first region 17, and reflect the light emitted from the sealing material 231 and guide the reflected light. It is led to the material 233 side.

Like the diffusion layer 234, the diffusion layer 237 is made of a filler made of silicon dioxide or the like, and a synthetic resin such as a silicone resin containing titanium oxide or the like. The surface of the diffusion layer 237 may be flat, or may have a convex shape with the top at the center of the first region 17 or a concave shape with the bottom at the center of the first region 17. The thickness of the central portion of the diffusion layer 237 is thinner than the thickness of the outer edge portion of the diffusion layer 237. Similar to the diffusion layer 234, the thickness of the diffusion layer 237 is thinnest at the center of the first region 17 and gradually increases toward the outer edge of the first region 17.

A method for manufacturing the light emitting device 114 will be described using FIGS. 26 and 27. The first to fifth steps for manufacturing the light emitting device 114 are the same as the first to fifth steps for manufacturing the light emitting device 113 shown in FIGS. 19 to 23, so detailed explanation will be omitted here. 26 is a diagram showing the sixth step of the method for manufacturing the light emitting device 114 shown in FIG. 25, and FIG. 27 is a diagram showing the seventh step of the method for manufacturing the light emitting device 114 shown in FIG. 25. In FIGS. 26 and 27, drawing A is a plan view, and drawing B is a sectional view taken along line BB shown in drawing A.

After the light guide material 233 is placed in the fifth step, the frame member 235 is placed so as to surround the sealing material 231 in the sixth step. First, the unsolidified resin of the frame member 235 is placed so as to surround the sealing material 231 . The resin of the frame member 235 before solidification has high thixotropy and can be arranged in a wall shape. Next, by heating the substrate 10, the unsolidified resin of the frame member 235 is solidified, thereby forming the frame member 235.

Next, in the seventh step, the shielding member 236 is placed along the inner wall of the frame member 235 so as to cover the entire surface of the sealing material 231 and the outer edge of the light guide material 233. First, the unsolidified resin of the shielding member 236 is placed along the inner wall of the frame member 235 so as to cover the sealing material 231 . Next, by heating the substrate 10, the unsolidified resin of the shielding member 236 is solidified, thereby forming the shielding member 236. Further, the sixth step may be performed before the seventh step, and may be performed after the third step, for example.

Then, in an eighth step (not shown), the diffusion layer 237 is placed inside the frame member 235 so as to cover the light guide material 233. First, the resin of the diffusion layer 237 before solidification is placed inside the frame member 235 so as to form a concave shape with the bottom at the center of the first region 17 and to cover the light guide material 233 . Next, by heating the substrate 10, the unsolidified resin of the diffusion layer 237 is solidified, thereby forming the diffusion layer 237.

Since the first region 17 of the light emitting device 114 is surrounded by the frame member 235 that reflects the first light and the second light, the first light and the second light can be efficiently emitted above the first region 17. .

In addition, in the light emitting device 114, similarly to the light emitting device 113, by making the thickness of the diffusion layer 237 thinner at the center of the first region 17 than at the outer edge of the first region 17, the distance between the diffusion layer 237 and the LED chip 20 is reduced. It is possible to suppress the occurrence of brightness unevenness between the central part and the outer edge of the first region 17 due to this. Note that in the light emitting device 114, since the surface of the diffusion layer 237 is a spherical recess with the bottom at the center of the first region 17, the thickness of the diffusion layer 237 at the center of the first region 17 is made thinner. , it is possible to further suppress the occurrence of brightness unevenness.

Furthermore, in the light emitting device 114 , part of the blue and yellow light emitted from the LED chip 20 and the fluorescent material 30 is transmitted through the shielding member 236 and emitted from the light emitting device 114 to the outside via the diffusion layer 237 . Therefore, it is possible to prevent a dark portion from occurring above the shielding member 236 and uneven brightness from occurring. Note that the transmittance of the shielding member 236 is preferably 30% or more and 70% or less, and although some light is transmitted, the color of the fluorescent material cannot be visually recognized from the outside. Therefore, in the light emitting device 114, the color of the fluorescent material is not visible from the outside when the light is turned off, and there is no risk that the aesthetic appearance will deteriorate.

28A is a plan view of the light emitting device 115 according to the eighth embodiment, and FIG. 28B is a sectional view taken along line CC shown in FIG. 28A.

The light emitting device 115 is different from the light emitting device 113 in that it has a light guiding material 238 and a plurality of dot-shaped resins 239 instead of the light guiding material 233 and the diffusion layer 234. In the light emitting device 115, the same components as those in the light emitting device 113 are given the same reference numerals, and description thereof will be omitted.

The light guide material 238 differs from the light guide material 233 in that the surface height is substantially uniform. The structure and function of the light guide material 238 other than that the surface height is uniform are the same as the structure and function of the light guide material 233, so a detailed description thereof will be omitted here.

The plurality of dot-shaped resins 239 are also referred to as resin dots, and are synthetic resins such as silicone resin containing a filler formed of silicon dioxide or the like and a white resin such as titanium oxide, and cover the surface of the light guide material 238. will be placed in The plurality of dot-shaped resins 239 are arranged such that the arrangement pitch gradually increases from the center of the first region 17 toward the outer edge.

The method for manufacturing the light-emitting device 115 is the same as the method for manufacturing the light-emitting device 113, except that a plurality of dot-shaped resins 239 are placed in place of the diffusion layer 234, so a detailed explanation will be omitted here.

The light emitting device 115 can emit light with low brightness unevenness because the plurality of dot-shaped resins 239 are arranged such that the arrangement pitch gradually increases from the center to the outer edge of the first region 17. . Note that the method of arranging the plurality of dot-shaped resins 239 is not limited to the method shown in the light emitting device 115, and other arrangement methods may be used as long as the uneven brightness can be reduced.

FIG. 29A is a plan view of the light emitting device 116 according to the ninth embodiment, and FIG. 29B is a cross-sectional view taken along line DD shown in FIG. 29A.

The light emitting device 116 is different from the light emitting device 113 in that it has a light guide material 240 instead of the light guide material 233 and does not have a diffusion layer 234. In the light emitting device 116, the same components as those in the light emitting device 113 are given the same reference numerals, and description thereof will be omitted.

The light guide material 240 differs from the light guide material 233 in that its surface is dimpled. The structure and function of the light guide material 240 other than that the surface is dimpled are the same as the structure and function of the light guide material 233, so a detailed description thereof will be omitted here. The depth of the dimples formed on the surface of the light guide material 240 is formed so that it gradually becomes shallower from the center of the first region 17 toward the outer edge.

The method for manufacturing the light emitting device 116 is the same as the method for manufacturing the light emitting device 113, except that dimple processing is performed on the surface of the light guide material 233 after the light guide material 233 is arranged, so a detailed explanation will be omitted here. do. Note that the dimple processing on the surface of the light guide material 233 is formed by performing laser processing on the surface of the light guide material 233, for example. The surface of the light guide material 233 is dimpled so that the depth of the dimples gradually becomes shallower from the center of the first region 17 toward the outer edge. The inside of the dimpled portion may be hollow (air) or may be filled with transparent resin or the like. By filling the inside of the dimpled portion with a projection resin layer, it is possible to prevent the dimple shape from being worn out and the optical characteristics from deteriorating. Furthermore, since the refractive index of air and transparent resin is lower than the refractive index of the light guide material 240, the dimpled portion also functions as a low refractive index layer.

In the light emitting device 116, since the surface of the light guide material 240 is dimpled, the occurrence of uneven brightness can be suppressed without disposing the diffusion layer 234. Note that the arrangement of the dimples and the height of each dimple do not have to be the arrangement and height shown in the light emitting device 116, and may be arranged in other ways as long as unevenness in brightness can be reduced.

Further, in the light emitting device 116, the mounting board 11 having the flat first region 17 is used, but the surface of the light guide material 240 is dimpled and the surface of the first region 17 is textured. A substrate may also be used.

FIG. 30A is a plan view of the light emitting device 117 according to the tenth embodiment, and FIG. 30B is a cross-sectional view taken along line EE shown in FIG. 30A.

The light emitting device 117 differs from the light emitting device 113 in that it has a protrusion 241 . In the light emitting device 117, the same components as those in the light emitting device 113 are given the same reference numerals, and the description thereof will be omitted.

The protrusion 241 is made of a material with high reflectance, such as aluminum, and has a conical shape. The protrusion 241 has a top portion 242 , an outer edge portion 243 , and a side surface portion 244 , and is arranged such that the top portion 242 is located at the center of the first region 17 . The apex 242 is the apex of the protrusion 241 and is located at the center when the reflective member is viewed from above. The outer edge portion 243 is lower in height than the top portion 242 and is arranged so as to surround the top portion 242 . The side surface portion 244 is disposed between the top portion 242 and the outer edge portion 243 and reflects the light emitted from the sealing material 231. Further, the protrusion 241 may be made of a synthetic resin such as silicone resin in which reflective fine particles such as titanium oxide are dispersed. Here, the conical shape includes a substantially conical shape such as a shape in which the apex 242 is round, a shape in which the planar shape of the outer edge portion 243 is not a perfect circle and includes irregularities, and a shape in which the side surface 243 has irregularities.

The method for manufacturing the light emitting device 117 differs from the method for manufacturing the light emitting device 113 in that a reflective member placement step for arranging the protrusions 241 is provided between the second and third steps in the manufacturing process for the light emitting device 113. do. In the reflective member arrangement step, the protrusion 241 is adhered to the center of the first region 17 with an adhesive. Further, in the case where the protrusion 241 is made of a synthetic resin such as silicone resin in which reflective fine particles such as titanium oxide are dispersed, the protrusion 241 is solidified at the center of the first region 17 in the reflective member arrangement step. It is glued to the part.

In the light emitting device 117, the protrusion 241 is arranged at the center of the first region 17, so that the brightness of the light emitted from the center of the first region 17 is improved. It is possible to suppress the occurrence of brightness unevenness between the two. Note that the protrusion 241 of the light emitting device 117 has a conical shape, but may have a polygonal pyramidal shape including a quadrangular pyramidal shape. Here, the polygonal pyramidal shape refers to a substantially polygonal pyramidal shape, such as a shape with a round apex, a shape in which the planar shape of the outer edge is uneven rather than a polygonal shape connected by straight lines, and a shape with unevenness on the side surface. including.

FIG. 31A is a plan view of the light emitting device 118 according to the eleventh embodiment, and FIG. 31B is a cross-sectional view taken along line FF shown in FIG. 31A.

The light emitting device 118 differs from the light emitting device 113 in that it has a substrate 250 instead of the substrate 10. In the light emitting device 118, the same components as those in the light emitting device 113 are given the same reference numerals, and description thereof will be omitted.

The board 250 differs from the board 10 in that it has a mounting board 251 instead of the mounting board 11. The configurations and functions of the components of the board 250 other than the mounting board 251 are the same as the configurations and functions of the components of the board 10 with the same reference numerals, so a detailed explanation will be omitted here.

The mounting board 251 differs from the mounting board 11 in that it has a first region 257 instead of the first region 17. The configurations and functions of the components of the mounting board 251 other than the first region 257 are the same as the configurations and functions of the components of the mounting board 11 with the same reference numerals, so detailed explanations will be omitted here. The first region 257 differs from the first region 17 in that it is textured.

The method for manufacturing the light emitting device 118 is the same as the method for manufacturing the light emitting device 113, except that the mounting substrate 251 whose first region 257 is textured is used, so a detailed explanation will be omitted here. Note that the texture of the first region 257 is formed, for example, by etching while masking a region other than the light emitting region 57 of the mounting board 251.

Since the first region 257 of the light emitting device 118 is textured, the light that is emitted from the sealing material 231 and enters the first region 257 is diffused in the first region 257 and emitted to the outside.

FIG. 32A is a plan view of a light emitting device 119 according to the twelfth embodiment, and FIG. 32B is a cross-sectional view taken along line GG shown in FIG. 32A.

The light emitting device 119 is different from the light emitting device 114 in that it has a sealing material 260 instead of the sealing material 231, and that it has a first LED chip 261, a second LED chip 262, and a third LED chip 263 instead of the LED chip 20. differ. In the light emitting device 119, the same components as those in the light emitting device 114 are given the same reference numerals, and the description thereof will be omitted.

The encapsulant 260 differs from the encapsulant 231 in that it does not contain the fluorescent material 30. The configuration and function of the encapsulant 260 other than not containing the fluorescent material 30 are the same as the configuration and function of the encapsulant 231, so detailed description thereof will be omitted here. The sealing material 260 is arranged to cover each of the first LED chip 261, the second LED chip 262, and the third LED chip 263.

Like the LED chip 20, the first LED chip 261 is a semiconductor element that emits blue light in the wavelength range of 440 nm to 455 nm, and is designated with the letter "B" in FIG. 32A. The second LED chip 262 is a semiconductor element that emits green light and is made of an InGaN-based compound semiconductor or the like and whose emitted light has a wavelength range of 505 nm to 555 nm, and is labeled with the letter "G" in FIG. 32A. The third LED chip 263 is a semiconductor element that emits red light and is made of a GaAsP-based compound semiconductor or the like and whose emitted light has a wavelength range of 620 nm to 750 nm, and is designated with the letter "R" in FIG. 32A.

The light emitted by the first LED chip 261 is an example of the first light having the first wavelength, the light emitted by the second LED chip 262 is an example of the second light having the second wavelength, and the light emitted by the third LED chip 263 is an example of the second light having the second wavelength. This light is an example of third light having a third wavelength.

The method for manufacturing the light emitting device 119 is the same as the method for manufacturing the light emitting device 114, except that the first LED chip 261, the second LED chip 262, and the third LED chip 263 are mounted instead of the LED chip 20, so a detailed explanation will be given here. is omitted.

In the light emitting device 119, the first LED chip 261, the second LED chip 262, and the third LED chip 263 are not arranged in the visible first area 17, so the first LED chip 261, the second LED chip 262, and the third There is no possibility that the 3 LED chips 263 will be visually recognized as uneven brightness.

Further, in the light emitting device 119, the mounting board 11 having the first region 17 which is a flat surface is used, but a mounting board in which the first region 17 is textured may also be used. Furthermore, the light emitting device 119 may use both a mounting board whose first region 17 is textured and a light guide material whose surface is dimpled.

FIG. 33A is a plan view of a light emitting device 120 according to the thirteenth embodiment, and FIG. 33B is a cross-sectional view taken along line HH shown in FIG. 33A.

The light emitting device 120 differs from the light emitting device 114 in that it includes a first encapsulant 271, a second encapsulant 272, and a third encapsulant 273 instead of the encapsulant 231. In the light-emitting device 120, the same components as the light-emitting device 114 are given the same reference numerals, and the description thereof will be omitted.

The first sealing material 271 is a synthetic resin such as silicone resin containing a phosphor such as YAG that absorbs blue light and emits yellow light. By sealing the LED chip 20 with the first sealing material 271, green light is emitted from the first sealing material 271 by mixing blue light and yellow light. Therefore, for convenience, in FIG. 33A, the letter "G" is attached to the LED chip 20 sealed by the first sealing material 271.

The second sealing material 272 is a synthetic resin such as silicone resin containing a phosphor such as CaAlSiN ₃ that absorbs blue light and emits red light. By sealing the LED chip 20 with the second sealing material 272, mainly red light is emitted from the second sealing material 272. Therefore, for convenience, in FIG. 33A, the letter "R" is attached to the LED chip 20 sealed by the second sealing material 272.

The third encapsulant 273 is a synthetic resin such as silicone resin that does not contain phosphor, and the LED chip 20 encapsulated by the first encapsulant 271 and the second encapsulant 272 and the first encapsulant 271 and the second sealing material 272 to seal the unsealed LED chips 20. Since the LED chip 20 sealed only with the third sealing material 273 emits blue light as it is, the letter "B" is attached in FIG. 33A for convenience.

The manufacturing method of the light emitting device 120 is the same as that of the light emitting device 114 except that the first to third sealing materials 271 to 273 are placed in place of the sealing material 231 in the fourth step of the manufacturing process of the light emitting device 114. Since this is the same as the manufacturing method, detailed explanation will be omitted here.

FIG. 34A is a plan view of a light emitting device 121 according to the fourteenth embodiment, and FIG. 34B is a cross-sectional view taken along line II shown in FIG. 34A.

In the light emitting device 121, the LED chip 20 is mounted in the first region 17 in addition to the second region 18 around the first region 17, and a sealing material 281 and a shielding member 282 are newly added. This is different from the light emitting device 113. In the light emitting device 121, the same components as those in the light emitting device 113 are given the same reference numerals, and description thereof will be omitted.

In the light emitting device 121, the LED chip 20 is mounted in the first region 17 in addition to the second region 18. Four LED chips 20 are mounted in the first region 17.

The sealing material 281 is arranged to cover the four LED chips 20 mounted in the first region 17. The material of the encapsulant 281 is the same as that of the encapsulant 231, and contains the same fluorescent material 30 as the fluorescent material contained in the encapsulant 231. The shielding member 282 is arranged above the light guide material 233 so as to cover the sealing material 281 that covers the four LED chips 20. Note that the material of the shielding member 282 is the same as that of the shielding member 236 used in the light emitting device 116 shown in FIG. 30, and preferably has the same transmittance as the shielding member 236. Note that the location indicated by the arrow H is an area inside the sealing material 281, and the light guide material 233 is also placed in this location.

The method for manufacturing the light emitting device 121 includes mounting the LED chip 20 in the first region 17, arranging the sealing material 281 so as to cover the LED chip 20 mounted in the first region 17, and manufacturing the light guide material 231. After curing, the method for manufacturing the light emitting device 113 is the same as the method for manufacturing the light emitting device 113, except that the reflective material 282 is placed so as to cover the sealing material 281, so a detailed explanation will be omitted here. Note that it is preferable that the light guide material 233 placed at the location indicated by the arrow H be solidified separately from the light guide material 233 placed outside the sealing material 281.

In the light emitting device 121 , since the LED chip 20 is mounted in the first region 17 , the brightness at the center of the mounting region 17 can be made higher than that in the light emitting device 113 . Furthermore, in the light emitting device 121, since the shielding member 282 is arranged to cover the LED chip 20 mounted in the first region 17, the LED chip 20 mounted in the first region 17 can be protected even during low brightness emission. There is no risk of being visually recognized as uneven brightness. Furthermore, in the light emitting device 121, when the light is turned off, the color of the fluorescent material contained in the sealing material 281 that seals the four LED chips 20 arranged in the first region 17 is shielded by the shielding member 282. It is not visible from the outside, and there is no risk of deterioration in aesthetic appearance.

In the light emitting devices 100 to 103 and 105 to 118 described above, an LED chip 20 that emits blue light that is the first color is mounted, but instead of the LED chip 20, an LED that emits light of the first color is mounted. A chip and an LED chip that emits light of a second color different from the first color may be mounted.

In the light emitting devices 100 to 121 described above, the first region 17 has a substantially rectangular planar shape, but the first region may have a polygonal (hexagonal, etc.) planar shape other than a circle or a rectangle. Note that when the first region 17 has a circular planar shape, the sealing material and the reflective material have a ring-shaped planar shape.

In the light emitting devices 100 to 121, power is supplied to the light emitting elements through a pair of electrodes, an anode electrode 13 and a cathode electrode 14, but power may be supplied to the light emitting elements through two or more pairs of electrodes. .

In the light emitting devices 100 to 113, 115, 116, 118, and 121, the reflective materials 32 and 232 reflect the blue light emitted from the LED chip 20 and the fluorescent material 30 contained in the sealants 31 and 231. Almost no yellow light is transmitted. However, as long as the color of the fluorescent material is not visible from the outside, a reflective material that transmits part of the light may be used.

In the light emitting devices 113 and 118, the surface of the diffusion layer 234 has a substantially uniform height over the entire surface, but the first region 17 has a recessed portion where the central portion is low and the peripheral portion is high. , it may be a spherical recess.

FIG. 35A is a plan view of a light emitting device 122 according to the fifteenth embodiment, and FIG. 35B is a cross-sectional view taken along line AA shown in FIG. 35A.

Compared to the light emitting device 114, the light emitting device 122 has a first group (12 pieces) of LED chips 20 arranged in a circular manner in the second region 18 closer to the outer edge of the light guide 333. The major difference is that a second group (12 pieces) of LED chips 20 are arranged in a circle inside the LED chips 20 of. Further, in the light emitting device 122, the same components as those in the light emitting device 114 are given the same reference numerals, and description thereof will be omitted.

The first anode wiring 317 is electrically connected to the first anode electrode 313, the second anode wiring 318 is electrically connected to the second anode electrode 314, and the first anode wiring 318 is electrically connected to the first cathode electrode 315. A first cathode wiring 319, a second cathode electrode 316, and a second cathode wiring 320 electrically connected to the second cathode electrode 316 are formed on the surface of the circuit board 312 using a conductive thin film such as copper. There is. The LED chips 20 of the first group are connected in series between the first anode wiring 317 and the first cathode wiring 319, and the LED chips 20 of the second group are connected in series between the second anode wiring 318 and the second cathode wiring 320. There is.

In the light emitting device 122, the first group of LED chips 20 is sealed with a first sealing material 331, and the second group of LED chips 20 is sealed with a second sealing material 332. The first encapsulant 331 is the same encapsulant as the second encapsulant 82 described in the light emitting device 110 described above, and as a result, warm white light with a color temperature of 2700K is emitted from the first encapsulant 331. It is emitted. Further, the second encapsulant 332 is the same encapsulant as the first encapsulant 81 described in the light emitting device 110 described above, and as a result, the second encapsulant 332 emits a cool white color with a color temperature of 6500K. Light is emitted.

By applying a predetermined first voltage between the first anode electrode 313 and the first cathode electrode 315, warm white light is emitted from the first sealing material 331, and the second anode electrode 314 and the second cathode electrode 316 By applying a predetermined second voltage between them, cool white light is emitted from the second sealing material 332. Therefore, by varying the voltage values of the first voltage and the second voltage, it is possible to change the chromaticity of the white light output from the light emitting device 122, in other words, to adjust the color.

Like the light emitting device 114, the light emitting device 122 includes a light guide material 333, a frame member 335, a shielding member 336, and a diffusion layer 337. The materials and functions of the light guiding material 333, frame member 335, shielding member 336, and diffusion layer 337 in the light emitting device 122 are the same as those of the light guiding material 233, frame member 235, shielding member 236, and diffusion layer 337 shown in the light emitting device 114. Since it is the same as layer 227 (only the shape is different), the explanation will be omitted.

In the light emitting device 122, the frame member 335 and the shielding member 336 serve as the reflective material 232 of the light emitting device 113. That is, the frame member 335 and the shielding member 336 are arranged above the first sealing material 331 and the second sealing material 332 and on the opposite side of the first region 17, The light emitted from the stopper material 332 is reflected and the reflected light is guided to the light guide material 333 side).

Further, in the light emitting device 122, a part of the light emitted from the first sealing material 331 and the second sealing material 332 is transmitted through the shielding member 336, and is emitted from the light emitting device 122 to the outside via the diffusion layer 337. Therefore, it is possible to prevent a dark portion from occurring above the shielding member 336 and uneven brightness from occurring. Note that the transmittance of the shielding member 336 is preferably 30% or more and 70% or less, and although some light is transmitted, the color of the fluorescent material cannot be visually recognized from the outside. Therefore, in the light emitting device 122, the color of the fluorescent material is not visible from the outside when the light is turned off, and there is no risk that the aesthetic appearance will deteriorate.

In the light emitting device 122, a first encapsulant 331 that emits warm white light is disposed outside a second encapsulant 332 that emits cool white light, and the first encapsulant 331 emits warm white light. absorbs the light emitted from the second sealing material 332 and suppresses secondary absorption, thereby improving the efficiency of the entire device.

The manufacturing method of the light emitting device 122 is such that, in the manufacturing process of the light emitting device 114, two groups of LED chips arranged in a double layer are sealed with two types of sealing materials, and each of the two groups of LED chips is connected to a predetermined wiring. Since they are almost the same except for connection to the electrodes, detailed description will be omitted.

FIG. 36A is a plan view of a light emitting device 123 according to the sixteenth embodiment, and FIG. 36B is a cross-sectional view taken along line BB shown in FIG. 36A.

The light emitting device 123 is significantly different from the light emitting device 122 in that the first group of LED chips 20 and the second group of LED chips 20 are sealed with a sealing material. Further, in the light emitting device 123, the same components as those in the light emitting device 122 are given the same reference numerals, and description thereof will be omitted.

In the light emitting device 123 , a first group (12 pieces) of LED chips 20 are arranged in a circular manner in the second region 18 close to the outer edge of the light guiding material 333 , and a first group (12 pieces) of LED chips 20 is arranged inside the first group of LED chips 20 . Two groups (12 pieces) of LED chips 20 are arranged in a circle, which is the same as the light emitting device 122. However, the entire first group of LED chips 20 and the second group of LED chips 20 are sealed with the second sealing material 342, and the first sealing material 341 is disposed only on the upper surface of the first group of LED chips 20. The difference is that it is

In the light emitting device 123, the first encapsulant 341 is the same encapsulant as the second encapsulant 82 described in the light emitting device 110 described above, and as a result, the first encapsulant 341 emits light with a color temperature of 2700K. Warm white light is emitted. The second encapsulant 342 is the same encapsulant as the first encapsulant 81 described in the light emitting device 110 described above, and cold white light with a color temperature of 6500K is emitted from the second encapsulant 342. be done. In FIG. 36A, for convenience, "W" is attached to the location where the first sealing material 341 is arranged.

By applying a predetermined first voltage between the first anode electrode 313 and the first cathode electrode 315, warm white light is emitted from the first sealing material 341, and the second anode electrode 314 and the second cathode electrode 316 By applying a predetermined second voltage between them, cool white light is emitted from the second sealing material 342. Therefore, by varying the voltage values of the first voltage and the second voltage, it is possible to change the chromaticity of the white light output from the light emitting device 123, in other words, to adjust the color.

In the light emitting device 123, the frame member 335 and the shielding member 336 are arranged above the first encapsulant 341 and the second encapsulant 342 and on the side opposite to the first region 17. The light emitted from the second sealing material 342 is reflected and the reflected light is guided to the light guide material 333 side.

Further, in the light emitting device 123, a part of the light emitted from the first sealing material 341 and the second sealing material 342 is transmitted through the shielding member 336, and is emitted from the light emitting device 123 to the outside via the diffusion layer 337. Therefore, it is possible to prevent a dark portion from occurring above the shielding member 336 and uneven brightness from occurring. Note that the transmittance of the shielding member 336 is preferably 30% or more and 70% or less, and although some light is transmitted, the color of the fluorescent material cannot be visually recognized from the outside. Therefore, in the light emitting device 123, the color of the fluorescent material is not visible from the outside when the light is turned off, and there is no risk of deterioration in aesthetic appearance.

Furthermore, in the light emitting device 123, the first group of LED chips 20 and the second group of LED chips 20 can be alternately arranged close to the outer edge of the light guiding material 333, so that warm white light and cool white light can be used. It is possible to improve the color mixing property of the system with white light.

The manufacturing method of the light emitting device 123 is such that, in the manufacturing process of the light emitting device 114, two groups of LED chips arranged in a double layer are sealed with two types of sealing materials, and each of the two groups of LED chips is connected to a predetermined wiring. Since they are almost the same except for connection to the electrodes, detailed description will be omitted.

FIG. 37A is a plan view of the light emitting device 124 according to the seventeenth embodiment, and FIG. 37B is a cross-sectional view taken along line CC shown in FIG. 37A.

The light emitting device 124 differs from the light emitting device 114 in that it has a frame member 350 instead of the frame member 235 and the shielding member 236, and has a diffusion layer 251 instead of the diffusion layer 237. In the light emitting device 124, the same components as those in the light emitting device 114 are given the same reference numerals, and description thereof will be omitted.

Like the reflective material 232, the frame member 350 is individually manufactured as a molded product from a material capable of reflecting the light emitted from the sealing material 231, has a hardness of pencil hardness B or higher, and has an adhesive (not shown). It is bonded to the substrate 10 with a material.

The diffusion layer 351 is made of the same material as the diffusion layer 237 of the light emitting device 114.

In the light emitting device 124, the frame member 350 is arranged so as to cover the upper side of the sealing material 231 and the side opposite to the first region 17, and reflects the light emitted from the sealing material 231 to emit the reflected light. It is guided to the light guide material 233 side.

The method for manufacturing the light emitting device 124 is that after the first to fifth steps of manufacturing the light emitting device 113 shown in FIGS. This is completed by forming a diffusion layer 351 between the material 233 and the material 233.

Since the first region 17 of the light emitting device 124 is surrounded by the frame member 350 that reflects the first light and the second light, the first light and the second light can be efficiently emitted above the first region 17. .

Further, in the light emitting device 124, since the upper part of the sealing material 233 is covered with the frame member 350, the color of the fluorescent material is not visible from the outside when the light is turned off, and there is no risk of deterioration in aesthetic appearance.

In addition, since the light emitting device 124 uses the frame member 350 that is a molded product, it is possible to provide a flat part on the upper part of the frame resin 350, and by using the flat part, it is possible to connect optical components etc. There is an advantage that connection and/or positioning can be easily performed. Furthermore, since the light emitting device 124 uses a molded frame member 350, the device is robust, and even if the upper part is touched by the user, the wires 21 etc. connecting the LED chips 20 will not break. low fear.

FIG. 38A is a plan view of a light emitting device 125 according to the eighteenth embodiment, and FIG. 38B is a cross-sectional view taken along line DD shown in FIG. 38A.

The light emitting device 125 differs from the light emitting device 114 in that a μLED chip 360 is arranged in the first region 17. In the light emitting device 125, the same components as those in the light emitting device 114 are given the same reference numerals, and the description thereof will be omitted.

The μLED chip 360 is a semiconductor element similar to the LED chip 20, but the vertical and horizontal external dimensions of the LED chip 20 are about 650 μm x 650 μm, whereas the vertical and horizontal external dimensions are very small, about 50 μm x 50 μm. . Although not shown in FIG. 38A, each μLED chip 360 is connected to the anode wiring 15 and the cathode wiring 16 by wires 21. Furthermore, the number of μLED chips 360 is not limited to the nine in FIG. 38A, and the chips 360 can be placed particularly in areas where brightness unevenness is likely to occur and used for correcting brightness unevenness. Further, the color emitted by the μLED chip 360 is not limited to blue light, and μLED chips emitting light of various colors can be used.

The method of manufacturing the light emitting device 125 is to arrange the μLED chip 360 at the same timing as the LED chip 20 in the same process as the process of manufacturing the light emitting device 113, and connect it with a wire.

Further, in the light emitting device 125, since the fluorescent material is not required for the light emission of the μLED chip 360 itself, similarly to the light emitting device 114, the color of the fluorescent material is not visible from the outside when the light is turned off, and there is no risk of degrading the aesthetic appearance.

FIG. 39A is a plan view of a light emitting device 126 according to the nineteenth embodiment, and FIG. 39B is a cross-sectional view taken along line EE shown in FIG. 39A.

The light emitting device 126 is significantly different from the light emitting device 124 in that the substrate 410 has an elongated rectangular shape and the LED chips are arranged in a line along the longitudinal direction of the substrate 410. Further, in the light emitting device 126, the same components as those in the light emitting device 114 are given the same reference numerals, and description thereof will be omitted.

In the light emitting device 126, a plurality of LED chips 20 are arranged in a line in the second region 18, close to the outer edge of the light guide 433 along the longitudinal direction. The LED chips 20 arranged in a plurality of lines are connected in series between an anode wiring 415 electrically connected to an anode electrode 413 and a cathode wiring 416 electrically connected to a cathode electrode 414.

The light emitting device 126 includes a sealing material 431, a light guiding material 433, a frame member 435, a shielding member 436, and a diffusion layer 437. The materials and functions of the encapsulant 431, light guide material 433, frame member 435, shielding member 436, and diffusion layer 437 in the light emitting device 126 are the same as those of the encapsulant 231, light guide material 233, and frame shown in the light emitting device 114. Compared to the member 235, the shielding member 236, and the diffusion layer 237, they are the same (only the shape is different), so the explanation will be omitted.

In the light emitting device 126, the frame member 435 and the shielding member 436 are arranged above the sealing material 431 and on the opposite side to the first region 17, and reflect the light emitted from the sealing material 431, thereby converting the reflected light into is guided to the light guide material 433 side.

Further, in the light emitting device 126, a part of the light emitted from the sealing material 431 is transmitted through the shielding member 436 and is emitted from the light emitting device 126 to the outside via the diffusion layer 437. It is possible to prevent uneven brightness from occurring due to dark areas. Note that the transmittance of the shielding member 436 is preferably 30% or more and 70% or less, and although some light is transmitted, the color of the fluorescent material cannot be visually recognized from the outside. Therefore, in the light emitting device 126, the color of the fluorescent material is not visible from the outside when the light is turned off, and there is no risk that the aesthetic appearance will deteriorate.

The method for manufacturing the light-emitting device 126 is the same as the manufacturing process for the light-emitting device 114, except for the difference in the shape of the substrate 410, so a detailed explanation will be omitted.

40A is a plan view showing an example of a top-emitting SMD 150, FIG. 40B is a right side view of FIG. 40A, and FIG. 40C is a back view of FIG. 40A. The top-emitting SMD 150 is an example of an LED package, and can be used in place of the LED chip 20 in the light-emitting devices 100 to 126 described above.

In the top-emitting SMD 150, an anode wiring 515 and a cathode wiring 516 arranged on a substrate 510 are connected to an LED chip 20 by a wire 21. The anode wiring 515 is electrically connected to an anode electrode 513 arranged on the back surface of the substrate 510 through a via 517. Further, the cathode wiring 516 is electrically connected to a cathode electrode 514 arranged on the back surface of the substrate 510 through a via 518.

A frame member 535 is arranged on the upper surface of the substrate 510, and a sealing material 531 is arranged inside thereof so as to seal the LED chip 20 and the wire 21. The sealing material 531 and the frame member 535 are made of the same material as the sealing material 231 and the frame member 235 of the light emitting device 114.

The top-emitting SMD 150 is connected to, for example, the anode wiring 15 and the cathode wiring 16 of the light-emitting device 114 through an anode electrode 513 and a cathode electrode 514 on the back surface (see FIG. 40C), and a predetermined current is supplied to the top surface side. (See FIG. 40A) emits light of a predetermined wavelength.

The external dimensions of the top-emitting SMD 150 in length, width, and height are, for example, 1.5 x 1.5 x 0.5 mm, but the size is not limited thereto.

41A is a plan view showing an example of a side-emitting SMD 151, FIG. 41B is a right side view of FIG. 41A, and FIG. 41C is a back view of FIG. 41A. The side-emitting SMD 151 is an example of an LED package, and can be used in place of the LED chip 20 in the light-emitting devices 100 to 126 described above. In the side-emitting SMD 151, the same components as those in the top-emitting SMD 150 are given the same reference numerals, and the description thereof will be omitted.

In the side-emitting SMD 151, an anode wiring 515 and a cathode wiring 516 arranged on a substrate 510 are connected to an LED chip 20 by a wire 21. The anode wiring 515 is electrically connected to an anode electrode 523 arranged on the back surface of the substrate 510 through a via 517. Further, the cathode wiring 516 is electrically connected to a cathode electrode 524 arranged on the back surface of the substrate 510 through a via 518.

A frame member 535 is arranged on the upper surface of the substrate 510, and a sealing material 531 is arranged inside thereof so as to seal the LED chip 20 and the wire 21. The sealing material 531 and the frame member 535 are made of the same material as the sealing material 231 and the frame member 235 of the light emitting device 114.

The side-emitting SMD 151 has an anode electrode 523 and a cathode electrode 524 extending from the back surface (see FIG. 41C) to the side surface, so that, for example, the anode wiring 15 and cathode of the light-emitting device 114 can be connected on the side surface side (arrow F side in FIG. 41B). When connected to the wiring 16 and supplied with a predetermined current, light of a predetermined wavelength is emitted from the upper surface side (see FIG. 41A).

The external dimensions of the side-emitting SMD 151 in length, width, and height are, for example, 0.8 x 1.5 x 0.8 mm, but the size is not limited thereto.

FIG. 42 is a diagram showing an example in which the light emitting device 113 is applied to the lighting device 600.

The lighting device 600 includes a light emitting device 113 and a lens 601. The lens 601 is an axially symmetrical, bowl-shaped collimator lens, and the light emitting device 100 is arranged so that the light emitting region of the light emitting device 100 is located in the recess 602 . The reflective surface 603, which is the outer surface of the lens 601, has the shape of a rotating body formed by rotating a parabola. The lens 601 reflects the light emitted from the light emitting device 100 on the reflecting surface 603 and emits the light from the emitting surface 604 . Note that other light emitting devices 101 to 112 and 114 to 126 can also be applied to lighting device 600.

FIG. 43A shows an example in which the light emitting device 700 according to the comparative example is used in the lighting device 600, and FIG. 43B shows an example in which the light emitting device 100 is used in the lighting device 600. Both FIGS. 43A and 43B assume a case where the user looks into the light emitting surface 604 of the illumination device 600.

A light emitting device 700 according to a comparative example is a light emitting device 113 in which a sealing material 231 containing an LED chip 20 and a fluorescent material 30 is placed in the first region 17 instead of the light guide material 233. shall be. Therefore, the light emitting device 700 is configured such that the color of the fluorescent material is visible from above when the light is turned off.

As shown in FIG. 43A, while the light emitting device 700 is off, the color of the encapsulant containing the fluorescent material present in the first region of the light emitting device 700 is reflected on the reflective surface 603 of the lens 601 of the lighting device 600. It is reflected, and the color of the phosphor is visible over the entire surface of the lens 601, deteriorating the aesthetic appearance.

On the other hand, as shown in FIG. 43B, in the light emitting device 113, the reflective material 232 is arranged so that the sealing material containing the fluorescent material is not visible from above, so even when the light emitting device 113 is turned off, the illumination The color of the phosphor is not visible over the entire surface of the lens 601 of the device 600.

Further, since the light emitting device 113 according to the embodiment has a large area, when manufacturing the lighting device 600 by mounting the lens 601 on the light emitting device 113, if a lateral shift occurs between the light emitting device 113 and the lens 601. However, there is a low possibility that the brightness will decrease.

Claims (15)

a substrate having a first region and a second region disposed around the first region;
a plurality of light emitting elements mounted on the substrate in the second region so as to surround the first region, and not mounted on the substrate in the first region;
a sealing material disposed on the substrate so as to cover the plurality of light emitting elements;
a reflective material disposed above the sealing material and on a side opposite to the first region side;
a light guiding material having an upper surface and disposed in the first region, facing a side surface of the sealing material on the first region side;
a diffusion layer disposed above the upper surface of the light guide material and containing a diffusion material that diffuses light emitted from the upper surface;
A light emitting device comprising: The light-emitting device according to claim 1, wherein the diffusion layer does not contain a fluorescent material that converts the wavelength of the light emitted from the plurality of light-emitting elements and emits light of a different wavelength . The light emitting device according to claim 1 or 2, wherein the reflective material and the light guide material do not contain a fluorescent material that converts the wavelength of the light emitted from the plurality of light emitting elements and emits it as light of a different wavelength . The light emitting device according to any one of claims 1 to 3, wherein the sealing material has a frame-like planar shape surrounding the first region. The light emitting device according to any one of claims 1 to 4, wherein the sealing material does not contain a fluorescent material that converts the wavelength of light emitted from the plurality of light emitting elements and emits light of a different wavelength . The plurality of light emitting elements are
a first light emitting element that emits light of a first wavelength;
6. The light emitting device according to claim 1, further comprising a second light emitting element that emits light of a second wavelength different from the light of the first wavelength. The light emitting device according to claim 6, wherein the first light emitting element and the second light emitting element are arranged alternately on the substrate. 8. The light emitting device according to claim 6, wherein the plurality of light emitting elements are SMD type LED chips that emit light in a direction perpendicular or horizontal to the substrate. The light emitting device according to any one of claims 6 to 8, comprising a third light emitting element that emits light of a third wavelength different from the light of the first wavelength and the second wavelength. The wavelength range of the first wavelength is 440 nm to 455 nm,
The wavelength range of the second wavelength is 505 nm to 555 nm,
The wavelength range of the third wavelength is 620 nm to 750 nm,
The light emitting device according to claim 9. 11. The height of the light guide from the surface of the substrate is set to gradually decrease from the center to the outer edge of the light guide. The light emitting device described. The light emitting device according to any one of claims 1 to 11, wherein the thickness of the central portion of the diffusion layer is thinner than the thickness of the outer edge portion of the diffusion layer. 13. The height of the surface of the diffusion layer from the surface of the substrate is set to gradually increase from the center to the outer edge of the diffusion layer. Light emitting device. 14. The light emitting device according to claim 1, wherein the surface of the substrate in the first region is textured. 14. The light emitting device according to claim 1, wherein in the first region, protrusions that reflect light emitted from the sealing material are arranged on the surface of the substrate.

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