JP7285377B2 - プラズマシステム用ナノ秒パルサrf絶縁 - Google Patents
プラズマシステム用ナノ秒パルサrf絶縁 Download PDFInfo
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- 238000002955 isolation Methods 0.000 title description 2
- 239000003990 capacitor Substances 0.000 claims description 78
- 235000012431 wafers Nutrition 0.000 description 37
- 238000011084 recovery Methods 0.000 description 25
- 238000010586 diagram Methods 0.000 description 22
- 238000004804 winding Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
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- 230000015654 memory Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000002294 plasma sputter deposition Methods 0.000 description 3
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- 238000007792 addition Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
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- 239000003989 dielectric material Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
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Description
幾つかの実施形態では、ナノ秒パルサは、抵抗出力段820に似た抵抗出力段を含んでよい。
幾つかの実施形態では、エネルギ回収回路905は、インダクタ910を通る電流の流れを制御する為に使用可能なスイッチを含んでよい。このスイッチは、例えば、インダクタ910と直列に配置されてよい。
「又は(or)」という語は包含的である。
〔付記1〕
複数の壁とウェーハ支持物とを含むプラズマチャンバであって、前記プラズマチャンバ内でプラズマが生成されると、前記プラズマと前記複数の壁のうちの前記少なくとも1つの壁との間に壁-プラズマシースが形成され、前記プラズマと、前記ウェーハ支持物上に配置されたウェーハと、の間にウェーハ-プラズマシースが形成され、前記壁-プラズマシースのキャパシタンスは、前記ウェーハ-プラズマシースのキャパシタンスの少なくとも約10倍の大きさである、前記プラズマチャンバと、
前記プラズマチャンバに入るバーストをRF周波数で駆動するRFドライバと、
前記プラズマチャンバに入るパルスを、前記RF周波数より低いパルス繰り返し周波数で駆動するナノ秒パルサと、
前記RFドライバと前記プラズマチャンバとの間に配置された第1のフィルタと、
前記ナノ秒パルサと前記プラズマチャンバとの間に配置された第2のフィルタと、
を含むプラズマシステム。
〔付記2〕
前記ウェーハ-プラズマシースのキャパシタンスは約1nFより小さい、付記1に記載のプラズマシステム。
〔付記3〕
前記RFドライバは、約1kVより高いピーク電圧で、且つ約1MHzより高い周波数でバーストを駆動する、付記1に記載のプラズマシステム。
〔付記4〕
前記ナノ秒パルサは、約1kVより高いピーク電圧で、且つ、前記RF発生器が発生させる前記バーストの周波数より低い周波数でパルスを駆動する、付記1に記載のプラズマシステム。
〔付記5〕
前記第1のフィルタはハイパスフィルタを含み、前記第2のフィルタはローパスフィルタを含む、付記1に記載のプラズマシステム。
〔付記6〕
前記第2のフィルタは、接地されたキャパシタを含む、付記1に記載のプラズマシステム。
〔付記7〕
前記キャパシタはキャパシタンスが約500pFより小さい、付記6に記載のプラズマシステム。
〔付記8〕
プラズマチャンバと、
前記プラズマチャンバと電気的に結合されて、前記プラズマチャンバに入るバーストをRF周波数で駆動するRFドライバと、
前記プラズマチャンバと電気的に結合されて、前記プラズマチャンバに入るパルスを、前記RF周波数より低いパルス繰り返し周波数で駆動するナノ秒パルサと、
前記RFドライバと前記プラズマチャンバとの間に配置されたキャパシタと、
前記ナノ秒パルサと前記プラズマチャンバとの間に配置されたインダクタと、
を含むプラズマシステム。
〔付記9〕
前記キャパシタはキャパシタンスが約100pFより小さい、付記8に記載のプラズマシステム。
〔付記10〕
前記インダクタはインダクタンスが約10nHより小さい、付記8に記載のプラズマシステム。
〔付記11〕
前記インダクタは浮遊キャパシタンスが約5pFより小さい、付記8に記載のプラズマシステム。
〔付記12〕
前記プラズマチャンバは複数の壁とウェーハ支持物とを含み、前記プラズマチャンバ内でプラズマが生成されると、前記プラズマと前記複数の壁のうちの前記少なくとも1つの壁との間に壁-プラズマシースが形成され、前記プラズマと、前記ウェーハ支持物上に配置されたウェーハと、の間にウェーハ-プラズマシースが形成され、前記壁-プラズマシースのキャパシタンスは、前記ウェーハ-プラズマシースのキャパシタンスの少なくとも約10倍の大きさである、付記8に記載のプラズマシステム。
〔付記13〕
前記プラズマチャンバは複数の壁とウェーハ支持物とを含み、前記プラズマチャンバ内でプラズマが生成されると、前記プラズマと前記複数の壁のうちの前記少なくとも1つの壁との間に壁-プラズマシースが形成され、前記プラズマと、前記ウェーハ支持物上に配置されたウェーハと、の間にウェーハ-プラズマシースが形成され、前記壁-プラズマシースのキャパシタンスは、前記ウェーハ-プラズマシースのキャパシタンスの少なくとも約50倍の大きさである、付記8に記載のプラズマシステム。
〔付記14〕
プラズマチャンバと、
前記プラズマチャンバに入るパルスを、約200kHzより高いRF周波数と、1kVより高いピーク電圧と、で駆動するように構成されたRFドライバと、
前記プラズマチャンバと電気的に結合されたエネルギシンク回路と、
前記プラズマチャンバと前記RFドライバとの間に電気的に結合された整流ダイオードであって、前記RFドライバが発生させた波形を整流する前記整流ダイオードと、
直列に配置されたドループ制御インダクタ及びドループ制御抵抗であって、前記ドループ制御インダクタ及び前記ドループ制御抵抗の前記直列結合は前記整流ダイオードと並列に配置される、前記ドループ制御インダクタ及び前記ドループ制御抵抗と、
を含むプラズマシステム。
〔付記15〕
前記エネルギシンク回路は抵抗出力段回路を含む、付記14に記載のプラズマシステム。
〔付記16〕
前記エネルギシンク回路はエネルギ回収回路を含む、付記14に記載のプラズマシステム。
〔付記17〕
前記ドループ制御インダクタはインダクタンスが約10mHより小さい、付記14に記載のプラズマシステム。
〔付記18〕
前記ドループ制御抵抗は約500Ωより小さい、付記14に記載のプラズマシステム。
Claims (13)
- 複数の壁とウェーハ支持物とを含むプラズマチャンバであって、前記プラズマチャンバ内でプラズマが生成されると、前記プラズマと前記複数の壁のうちの前記少なくとも1つの壁との間に壁-プラズマシースが形成され、前記プラズマと、前記ウェーハ支持物上に配置されたウェーハと、の間にウェーハ-プラズマシースが形成され、前記壁-プラズマシースのキャパシタンスは、前記ウェーハ-プラズマシースのキャパシタンスの少なくとも10倍の大きさである、前記プラズマチャンバと、
前記プラズマチャンバに入るバーストをRF周波数で駆動するRFドライバと、
前記プラズマチャンバに入るパルスを、前記RF周波数より低いパルス繰り返し周波数で駆動するナノ秒パルサと、
前記RFドライバと前記プラズマチャンバとの間に配置された第1のフィルタと、
前記ナノ秒パルサと前記プラズマチャンバとの間に配置された第2のフィルタと、
を含むプラズマシステム。 - 前記ウェーハ-プラズマシースのキャパシタンスは1nFより小さい、請求項1に記載のプラズマシステム。
- 前記RFドライバは、1kVより高いピーク電圧で、且つ1MHzより高い周波数でバーストを駆動する、請求項1に記載のプラズマシステム。
- 前記ナノ秒パルサは、1kVより高いピーク電圧で、且つ、前記RF発生器が発生させる前記バーストの周波数より低い周波数でパルスを駆動する、請求項1に記載のプラズマシステム。
- 前記第1のフィルタはハイパスフィルタを含み、前記第2のフィルタはローパスフィルタを含む、請求項1に記載のプラズマシステム。
- 前記第2のフィルタは、接地されたキャパシタを含む、請求項1に記載のプラズマシステム。
- 前記キャパシタはキャパシタンスが500pFより小さい、請求項6に記載のプラズマシステム。
- プラズマチャンバと、
前記プラズマチャンバと電気的に結合されて、前記プラズマチャンバに入るバーストをRF周波数で駆動するRFドライバと、
前記プラズマチャンバと電気的に結合されて、前記プラズマチャンバに入るパルスを、前記RF周波数より低いパルス繰り返し周波数で駆動するナノ秒パルサと、
前記RFドライバと前記プラズマチャンバとの間に配置されたキャパシタと、
前記ナノ秒パルサと前記プラズマチャンバとの間に配置されたインダクタと、
を含むプラズマシステム。 - 前記キャパシタはキャパシタンスが100pFより小さい、請求項8に記載のプラズマシステム。
- 前記インダクタはインダクタンスが10nHより小さい、請求項8に記載のプラズマシステム。
- 前記インダクタは浮遊キャパシタンスが5pFより小さい、請求項8に記載のプラズマシステム。
- 前記プラズマチャンバは複数の壁とウェーハ支持物とを含み、前記プラズマチャンバ内でプラズマが生成されると、前記プラズマと前記複数の壁のうちの前記少なくとも1つの壁との間に壁-プラズマシースが形成され、前記プラズマと、前記ウェーハ支持物上に配置されたウェーハと、の間にウェーハ-プラズマシースが形成され、前記壁-プラズマシースのキャパシタンスは、前記ウェーハ-プラズマシースのキャパシタンスの少なくとも10倍の大きさである、請求項8に記載のプラズマシステム。
- 前記プラズマチャンバは複数の壁とウェーハ支持物とを含み、前記プラズマチャンバ内でプラズマが生成されると、前記プラズマと前記複数の壁のうちの前記少なくとも1つの壁との間に壁-プラズマシースが形成され、前記プラズマと、前記ウェーハ支持物上に配置されたウェーハと、の間にウェーハ-プラズマシースが形成され、前記壁-プラズマシースのキャパシタンスは、前記ウェーハ-プラズマシースのキャパシタンスの少なくとも50倍の大きさである、請求項8に記載のプラズマシステム。
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Citations (2)
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