JP7175172B2 - 基準電圧発生装置 - Google Patents
基準電圧発生装置 Download PDFInfo
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- JP7175172B2 JP7175172B2 JP2018232169A JP2018232169A JP7175172B2 JP 7175172 B2 JP7175172 B2 JP 7175172B2 JP 2018232169 A JP2018232169 A JP 2018232169A JP 2018232169 A JP2018232169 A JP 2018232169A JP 7175172 B2 JP7175172 B2 JP 7175172B2
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- 239000012535 impurity Substances 0.000 claims description 184
- 230000008859 change Effects 0.000 claims description 12
- 108091006146 Channels Proteins 0.000 description 75
- 238000004519 manufacturing process Methods 0.000 description 20
- 238000010586 diagram Methods 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 15
- 239000000758 substrate Substances 0.000 description 12
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 8
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 8
- 238000000034 method Methods 0.000 description 8
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- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/262—Current mirrors using field-effect transistors only
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/625—Regulating voltage or current wherein it is irrelevant whether the variable actually regulated is ac or dc
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/0883—Combination of depletion and enhancement field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823412—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Nonlinear Science (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Control Of Electrical Variables (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
2 接地端子
3 基準電圧端子
4 半導体基板
101、111、201、211、301、311 P型ウェル領域
102、112、202、212、302、312 ゲート絶縁膜
103、113、203、213、303、313 ドレイン領域
104、114、204、214、304、314 ソース領域
105、115、205、215、305、315 ゲート電極
106、116、206、216、306、316 チャネル不純物領域
10、20、30、40、40D、50、60 デプレッション型NMOSトランジスタ
11A、11B、11C、21A、21B、21C、31A、31B、31C、41B1、41B2、41C1、41C2、51A、51B、51C、61 エンハンス型NMOSトランジスタ
12B、12C、22B、22C、32B、32C、42B2、42C2、42D、52B、52C ヒューズ
55、56 PMOSトランジスタ
101、201、301、401、501、601 定電流回路
102、202、302、402、502、602 電圧生成回路
503 カレントミラー回路
Claims (5)
- 入力電圧に対して定電流を出力する定電流回路と、
前記定電流回路に直列に接続され、前記定電流を入力電流として、前記入力電流に基づいた出力電圧を生成する複数の電圧生成回路と、
を備える基準電圧発生装置であって、
前記定電流回路は、ドレインから入力された前記入力電圧に基づいて、ソースから前記定電流を出力するデプレッション型MOSトランジスタを含み、
前記定電流回路が出力する前記定電流は、温度変化に対して第1の勾配の相関関係を有し、
前記電圧生成回路は、ドレインから入力された電流を前記入力電流とし、ドレインにおいて前記出力電圧を出力するエンハンス型MOSトランジスタを含み、
前記エンハンス型MOSトランジスタは、異なる不純物濃度のチャネル不純物領域を有し、
複数の前記電圧生成回路が出力する複数の前記出力電圧は、温度変化に対して前記第1の勾配の相関関係とは逆の第2の勾配の相関関係であっておのおのが異なる勾配度を有し、
前記勾配度は、温度変化に対する近似1次係数と近似2次係数を含み、
前記定電流と、複数の前記電圧生成回路から選ばれた少なくとも1つの前記電圧生成回路の前記出力電圧の和に基づいた基準電圧を発生することを特徴とする基準電圧発生装置。 - 複数の前記電圧生成回路は、並列にヒューズが接続された電圧生成回路を含み、
前記出力電圧は、前記ヒューズの状態変更によって複数の前記電圧生成回路から選ばれた少なくとも1つの前記電圧生成回路によって生成される請求項1に記載の基準電圧発生装置。 - 複数の前記電圧生成回路は、ゲート電極が異なる極性もしくは異なる濃度の不純物を有するエンハンス型MOSトランジスタを含むことを特徴とする請求項1に記載の基準電圧発生装置。
- 複数の前記電圧生成回路は、異なるチャネルサイズを有するエンハンス型MOSトランジスタを含むことを特徴とする請求項1または3に記載の基準電圧発生装置。
- 前記定電流回路は、複数の異なるチャネルサイズを有するデプレッション型MOSトランジスタを含むことを特徴とする請求項1に記載の基準電圧発生装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018232169A JP7175172B2 (ja) | 2018-12-12 | 2018-12-12 | 基準電圧発生装置 |
TW108141853A TW202022527A (zh) | 2018-12-12 | 2019-11-19 | 參考電壓產生裝置 |
US16/690,761 US10860046B2 (en) | 2018-12-12 | 2019-11-21 | Reference voltage generation device |
KR1020190162723A KR20200072415A (ko) | 2018-12-12 | 2019-12-09 | 기준 전압 발생 장치 |
CN201911273920.XA CN111309088B (zh) | 2018-12-12 | 2019-12-12 | 基准电压产生装置 |
Applications Claiming Priority (1)
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---|---|---|---|
JP2018232169A JP7175172B2 (ja) | 2018-12-12 | 2018-12-12 | 基準電圧発生装置 |
Publications (2)
Publication Number | Publication Date |
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JP2020095426A JP2020095426A (ja) | 2020-06-18 |
JP7175172B2 true JP7175172B2 (ja) | 2022-11-18 |
Family
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JP2018232169A Active JP7175172B2 (ja) | 2018-12-12 | 2018-12-12 | 基準電圧発生装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10860046B2 (ja) |
JP (1) | JP7175172B2 (ja) |
KR (1) | KR20200072415A (ja) |
CN (1) | CN111309088B (ja) |
TW (1) | TW202022527A (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US11756950B2 (en) * | 2021-01-14 | 2023-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd | Integrated circuit and method for manufacturing the same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011198352A (ja) | 2010-02-24 | 2011-10-06 | Fuji Electric Co Ltd | 基準電圧回路 |
JP2018173866A (ja) | 2017-03-31 | 2018-11-08 | エイブリック株式会社 | 基準電圧発生装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4868416A (en) * | 1987-12-15 | 1989-09-19 | Gazelle Microcircuits, Inc. | FET constant reference voltage generator |
US4994688A (en) * | 1988-05-25 | 1991-02-19 | Hitachi Ltd. | Semiconductor device having a reference voltage generating circuit |
JP3318363B2 (ja) * | 1992-09-02 | 2002-08-26 | 株式会社日立製作所 | 基準電圧発生回路 |
JP3783910B2 (ja) * | 1998-07-16 | 2006-06-07 | 株式会社リコー | 基準電圧源用半導体装置 |
JP3717388B2 (ja) * | 2000-09-27 | 2005-11-16 | 株式会社リコー | 基準電圧発生回路及びその出力値調整方法並びに電源装置 |
JP4859754B2 (ja) * | 2007-05-28 | 2012-01-25 | 株式会社リコー | 基準電圧発生回路及び基準電圧発生回路を使用した定電圧回路 |
JP5306094B2 (ja) * | 2009-07-24 | 2013-10-02 | セイコーインスツル株式会社 | 基準電圧回路及び電子機器 |
JP5533345B2 (ja) * | 2009-12-25 | 2014-06-25 | ミツミ電機株式会社 | 電流源回路及びそれを用いた遅延回路及び発振回路 |
CN201804292U (zh) * | 2010-04-23 | 2011-04-20 | 比亚迪股份有限公司 | 基准电压产生电路 |
JP6289083B2 (ja) | 2013-02-22 | 2018-03-07 | エイブリック株式会社 | 基準電圧発生回路 |
CN105845688A (zh) * | 2015-02-03 | 2016-08-10 | 精工半导体有限公司 | 半导体非易失性存储元件及其制造方法 |
CN110994547B (zh) * | 2015-09-21 | 2022-04-01 | 西普托特技术有限责任公司 | 用于保护电路的单晶体管器件以及方法 |
JP7009033B2 (ja) * | 2018-02-06 | 2022-01-25 | エイブリック株式会社 | 基準電圧発生装置 |
-
2018
- 2018-12-12 JP JP2018232169A patent/JP7175172B2/ja active Active
-
2019
- 2019-11-19 TW TW108141853A patent/TW202022527A/zh unknown
- 2019-11-21 US US16/690,761 patent/US10860046B2/en active Active
- 2019-12-09 KR KR1020190162723A patent/KR20200072415A/ko unknown
- 2019-12-12 CN CN201911273920.XA patent/CN111309088B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011198352A (ja) | 2010-02-24 | 2011-10-06 | Fuji Electric Co Ltd | 基準電圧回路 |
JP2018173866A (ja) | 2017-03-31 | 2018-11-08 | エイブリック株式会社 | 基準電圧発生装置 |
Also Published As
Publication number | Publication date |
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US10860046B2 (en) | 2020-12-08 |
CN111309088B (zh) | 2022-09-20 |
US20200192412A1 (en) | 2020-06-18 |
CN111309088A (zh) | 2020-06-19 |
JP2020095426A (ja) | 2020-06-18 |
KR20200072415A (ko) | 2020-06-22 |
TW202022527A (zh) | 2020-06-16 |
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