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JP7169083B2 - Acoustic wave devices and multiplexers - Google Patents

Acoustic wave devices and multiplexers Download PDF

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JP7169083B2
JP7169083B2 JP2018072706A JP2018072706A JP7169083B2 JP 7169083 B2 JP7169083 B2 JP 7169083B2 JP 2018072706 A JP2018072706 A JP 2018072706A JP 2018072706 A JP2018072706 A JP 2018072706A JP 7169083 B2 JP7169083 B2 JP 7169083B2
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均 月舘
和重 畑山
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Taiyo Yuden Co Ltd
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本発明は、弾性波デバイスおよびマルチプレクサに関し、例えば支持基板上に接合された圧電基板を有する弾性波デバイスおよびマルチプレクサに関する。 The present invention relates to acoustic wave devices and multiplexers , for example acoustic wave devices and multiplexers having a piezoelectric substrate bonded onto a supporting substrate.

圧電基板の弾性表面波を用いた弾性波デバイスの周波数温度特性を向上させるため支持基板上に圧電基板を接合することが知られている。圧電基板の厚さを弾性表面波の波長以下とすることでスプリアスを抑制できることが知られている（例えば特許文献１）。支持基板と圧電基板との間に圧電基板よりバルク音速が遅い低音速膜を設けることが知られている（例えば特許文献２）。圧電基板の厚さを異ならせることが知られている（例えば特許文献３から５） 2. Description of the Related Art It is known to bond a piezoelectric substrate to a supporting substrate in order to improve the frequency temperature characteristics of an acoustic wave device using surface acoustic waves of the piezoelectric substrate. It is known that spurious can be suppressed by making the thickness of the piezoelectric substrate equal to or less than the wavelength of the surface acoustic wave (for example, Patent Document 1). It is known to provide a low acoustic velocity film having a bulk sound velocity lower than that of the piezoelectric substrate between the support substrate and the piezoelectric substrate (for example, Patent Document 2). It is known to vary the thickness of the piezoelectric substrate (for example, Patent Documents 3 to 5).

特開２０１７－３４３６３号公報JP 2017-34363 A 国際公開２０１２／０８６６３９号WO2012/086639 特開２０１３－１５７８３９号公報JP 2013-157839 A 特開２００５－２２３６１０号公報Japanese Patent Application Laid-Open No. 2005-223610 特開平５－３０４４３６号公報JP-A-5-304436 特表２０１８－５０６９３０号公報Japanese Patent Application Publication No. 2018-506930

共振周波数の異なる弾性表面波共振器を同一基板に設けるためには、電極指のピッチを異ならせる、電極指の膜厚を異ならせる、および／または電極指を覆う絶縁膜の膜厚を異ならせる、等の方法がある。しかしながら、共振周波数を大きく異ならせようとすると、いずれの方法も製造方法が複雑になる、および／または製造方法が制約される。 In order to provide surface acoustic wave resonators with different resonance frequencies on the same substrate, the pitch of the electrode fingers is varied, the thickness of the electrode fingers is varied, and/or the thickness of the insulating film covering the electrode fingers is varied. , etc. However, any attempt to make the resonance frequencies significantly different complicates the manufacturing method and/or restricts the manufacturing method.

本発明は、上記課題に鑑みなされたものであり、共振周波数の異なる弾性波共振器を提供することを目的とする。 SUMMARY OF THE INVENTION It is an object of the present invention to provide elastic wave resonators having different resonance frequencies.

本発明は、支持基板と、前記支持基板上に接合し、第１の厚さを有する第１領域と前記第１の厚さより大きい第２の厚さを有する第２領域とを有する圧電基板と、前記圧電基板の前記第１領域上に設けられ、複数の第１電極指を各々有する一対の第１櫛型電極を備え、前記一対の第１櫛型電極の一方の第１櫛型電極における第１電極指の平均ピッチは前記第１の厚さより大きい第１弾性波共振器と、前記圧電基板の前記第２領域上に設けられ、複数の第２電極指を各々有する一対の第２櫛型電極を備え、前記一対の第２櫛型電極の一方の第２櫛型電極における第２電極指の平均ピッチに対する前記第２の厚さの比は、前記一方の第１櫛型電極における第１電極指の平均ピッチに対する前記第１の厚さの比より大きい第２弾性波共振器と、を備え、前記一対の第１櫛型電極および前記一対の第２櫛型電極は主モードとしてＳＨ波を励振する弾性波デバイスである。 The present invention provides a support substrate, and a piezoelectric substrate bonded onto the support substrate and having a first region having a first thickness and a second region having a second thickness greater than the first thickness. a pair of first comb-shaped electrodes provided on the first region of the piezoelectric substrate and each having a plurality of first electrode fingers; a first acoustic wave resonator having an average pitch of first electrode fingers larger than the first thickness; and a pair of second combs provided on the second region of the piezoelectric substrate and having a plurality of second electrode fingers each. The ratio of the second thickness to the average pitch of the second electrode fingers in one of the pair of second comb-shaped electrodes is equal to the ratio of the second thickness in the one of the first comb-shaped electrodes. a second acoustic wave resonator having a larger ratio of the first thickness to the average pitch of one electrode finger, wherein the pair of first comb-shaped electrodes and the pair of second comb-shaped electrodes have a main mode of SH It is an acoustic wave device that excites waves.

上記構成において、前記一方の第２櫛型電極における第２電極指の平均ピッチは前記第２の厚さより大きい構成とすることができる。 In the above configuration, the average pitch of the second electrode fingers in the one second comb-shaped electrode may be larger than the second thickness.

上記構成において、前記一方の第２櫛型電極における第２電極指の平均ピッチは前記第２の厚さより小さい構成とすることができる。 In the above configuration, the average pitch of the second electrode fingers in the one second comb-shaped electrode may be smaller than the second thickness.

上記構成において、前記圧電基板は前記支持基板にアモルファス層を介し直接接合されている構成とすることができる。 In the above structure, the piezoelectric substrate may be directly bonded to the support substrate via an amorphous layer.

上記構成において、前記圧電基板と前記支持基板とに挟まれた中間層を備える構成とすることができる。 In the above configuration, an intermediate layer sandwiched between the piezoelectric substrate and the support substrate may be provided.

上記構成において、前記圧電基板の前記第１領域と前記支持基板との間の前記中間層の第３の厚さは前記圧電基板の前記第２領域と前記支持基板との間の前記中間層の第４の厚さより大きい構成とすることができる。 In the above configuration, the third thickness of the intermediate layer between the first region of the piezoelectric substrate and the support substrate is the thickness of the intermediate layer between the second region of the piezoelectric substrate and the support substrate. It can be configured to be greater than the fourth thickness.

上記構成において、前記圧電基板の前記第１領域と前記第２領域との前記中間層の反対側の面は略平坦である構成とすることができる。 In the above structure, the surfaces of the first region and the second region of the piezoelectric substrate opposite to the intermediate layer may be substantially flat.

上記構成において、前記第２弾性波共振器の共振周波数は前記第１弾性波共振器の共振周波数より低い構成とすることができる。 In the above configuration, the resonant frequency of the second acoustic wave resonator may be lower than the resonant frequency of the first acoustic wave resonator .

上記構成において、前記圧電基板は、２０°以上かつ４８°以下のカット角を有するＹカットＸ伝搬タンタル酸リチウム基板である構成とすることができる。 In the above configuration, the piezoelectric substrate may be a Y-cut X-propagation lithium tantalate substrate having a cut angle of 20° or more and 48° or less.

本発明は、上記弾性波デバイスを含み、１または複数の前記第１弾性波共振器を含む第１フィルタと、前記第１フィルタの通過帯域と重ならず、かつ前記第１フィルタの通過帯域より低い通過帯域を有し、１または複数の前記第２弾性波共振器を含む第２フィルタと、を備えるマルチプレクサである。 The present invention includes a first filter including the above acoustic wave device and including one or more of the first acoustic wave resonators , and a second filter having a low passband and including one or more of the second acoustic wave resonators.

本発明によれば、共振周波数の異なる弾性波共振器を提供することができる。 According to the present invention, elastic wave resonators having different resonance frequencies can be provided.

図１（ａ）は、弾性波共振器の平面図、図１（ｂ）は、図１（ａ）のＡ－Ａ断面図である。FIG. 1(a) is a plan view of an elastic wave resonator, and FIG. 1(b) is a cross-sectional view taken along line AA of FIG. 1(a). 図２（ａ）および図２（ｂ）は、比較例１に係る弾性波共振器の断面図である。2A and 2B are cross-sectional views of an elastic wave resonator according to Comparative Example 1. FIG. 図３は、比較例２に係る弾性波デバイスの断面図である。FIG. 3 is a cross-sectional view of an acoustic wave device according to Comparative Example 2. FIG. 図４（ａ）および図４（ｂ）は、圧電基板の厚さＴ／ピッチＬに対する共振周波数ｆｒを示す図である。4(a) and 4(b) are diagrams showing the resonance frequency fr with respect to the thickness T/pitch L of the piezoelectric substrate. 図５（ａ）および図５（ｂ）は、実施例１に係る弾性波デバイスの断面図である。5A and 5B are cross-sectional views of the acoustic wave device according to Example 1. FIG. 図６は、実施例１を用いたデュプレクサの回路図である。FIG. 6 is a circuit diagram of a duplexer using the first embodiment. 図７は、実施例１における基板１０の平面図である。FIG. 7 is a plan view of the substrate 10 in Example 1. FIG. 図８（ａ）から図８（ｅ）は、実施例１に係る弾性波デバイスの製造方法を示す断面図（その１）である。8A to 8E are cross-sectional views (Part 1) showing the method of manufacturing the acoustic wave device according to the first embodiment. 図９（ａ）から図９（ｄ）は、実施例１に係る弾性波デバイスの製造方法を示す断面図（その２）である。9A to 9D are cross-sectional views (part 2) showing the method of manufacturing the acoustic wave device according to the first embodiment. 図１０（ａ）および図１０（ｂ）は、実施例２に係る弾性波デバイスの断面図である。10A and 10B are cross-sectional views of an acoustic wave device according to Example 2. FIG. 図１１（ａ）および図１１（ｂ）は、実施例２の変形例１に係る弾性波デバイスの断面図である。11A and 11B are cross-sectional views of an acoustic wave device according to Modification 1 of Embodiment 2. FIG. 図１２（ａ）から図１２（ｄ）は、実施例２の変形例１に係る弾性波デバイスの製造方法を示す断面図（その１）である。12A to 12D are cross-sectional views (part 1) showing a method of manufacturing an acoustic wave device according to Modification 1 of Embodiment 2. FIG. 図１３（ａ）から図１３（ｃ）は、実施例２の変形例１に係る弾性波デバイスの製造方法を示す断面図（その２）である。13A to 13C are cross-sectional views (Part 2) showing the method of manufacturing the acoustic wave device according to Modification 1 of Embodiment 2. FIG. 図１４（ａ）および図１４（ｂ）は、実施例２の変形例１に係る弾性波デバイスの製造方法を示す断面図（その３）である。14A and 14B are cross-sectional views (Part 3) showing the method of manufacturing the acoustic wave device according to Modification 1 of Embodiment 2. FIG.

［弾性波共振器の説明］
図１（ａ）は、弾性波共振器の平面図、図１（ｂ）は、図１（ａ）のＡ－Ａ断面図である。電極指１４の配列方向をＸ方向、電極指１４の延伸する方向をＹ方向、圧電基板１０ａの上面の法線方向をＺ方向とする。Ｘ方向、Ｙ方向およびＺ方向は、圧電基板１０ａの結晶方位のＸ軸方向、Ｙ軸方向およびＺ軸方向とは必ずしも対応しない。 [Explanation of elastic wave resonator]
FIG. 1(a) is a plan view of an elastic wave resonator, and FIG. 1(b) is a cross-sectional view taken along line AA of FIG. 1(a). The arrangement direction of the electrode fingers 14 is the X direction, the extending direction of the electrode fingers 14 is the Y direction, and the normal direction of the upper surface of the piezoelectric substrate 10a is the Z direction. The X, Y and Z directions do not necessarily correspond to the X, Y and Z directions of the crystal orientation of the piezoelectric substrate 10a.

図１（ａ）および図１（ｂ）に示すように、弾性波共振器２０では、基板１０は、支持基板１０ｂと支持基板１０ｂに接合された圧電基板１０ａとを有する。圧電基板１０ａ上にＩＤＴ１８および反射器１９が形成されている。ＩＤＴ１８および反射器１９は、基板１０上に形成された金属膜１２により形成される。ＩＤＴ１８は、対向する一対の櫛型電極１６を備える。一対の櫛型電極１６は、それぞれ複数の電極指１４と、複数の電極指１４が接続されたバスバー１５と、を備える。一対の櫛型電極１６の電極指１４が重なる領域が交差領域５６である。交差領域５６の少なくとも一部において、一対の櫛型電極１６のうち一方の櫛型電極の電極指と他方の櫛型電極の電極指とがほぼ互い違いとなるように、対向して設けられている。 As shown in FIGS. 1A and 1B, in acoustic wave resonator 20, substrate 10 has support substrate 10b and piezoelectric substrate 10a bonded to support substrate 10b. An IDT 18 and a reflector 19 are formed on the piezoelectric substrate 10a. IDT 18 and reflector 19 are formed by metal film 12 formed on substrate 10 . The IDT 18 includes a pair of comb electrodes 16 facing each other. A pair of comb-shaped electrodes 16 each includes a plurality of electrode fingers 14 and a bus bar 15 to which the plurality of electrode fingers 14 are connected. A region where the electrode fingers 14 of the pair of comb-shaped electrodes 16 overlap is the intersection region 56 . In at least a part of the intersecting region 56, the electrode fingers of one of the pair of comb-shaped electrodes 16 and the electrode fingers of the other comb-shaped electrode are provided facing each other so as to be substantially alternated. .

交差領域５６において電極指１４が励振する弾性波は、主にＸ方向に伝搬する。一方の櫛型電極１６の電極指１４のピッチＬがほぼ弾性波の波長λとなる。圧電基板１０ａは、例えばタンタル酸リチウム基板またはニオブ酸リチウム基板であり、例えば回転ＹカットＸ伝搬タンタル酸リチウム基板または回転ＹカットＸ伝搬ニオブ酸リチウム基板ある。支持基板１０ｂは、例えばサファイア基板、スピネル基板、アルミナ基板、ガラス基板、水晶基板またはシリコン基板である。支持基板１０ｂの線熱膨張係数は圧電基板１０ａの線熱膨張係数より小さい。これにより、弾性波共振器の周波数温度係数（ＴＣＦ：Temperature Coefficient of Frequency）を抑制できる。金属膜１２は、例えばアルミニウム膜または銅膜である。基板１０上に、電極指１４を覆うように保護膜または温度補償膜として機能する絶縁膜が設けられていてもよい。 The elastic waves excited by the electrode fingers 14 in the intersecting regions 56 mainly propagate in the X direction. The pitch L of the electrode fingers 14 of one comb-shaped electrode 16 is approximately the wavelength λ of the elastic wave. The piezoelectric substrate 10a is, for example, a lithium tantalate substrate or a lithium niobate substrate, such as a rotated Y-cut X-propagation lithium tantalate substrate or a rotated Y-cut X-propagation lithium niobate substrate. The support substrate 10b is, for example, a sapphire substrate, a spinel substrate, an alumina substrate, a glass substrate, a crystal substrate, or a silicon substrate. The linear thermal expansion coefficient of the support substrate 10b is smaller than that of the piezoelectric substrate 10a. Thereby, the temperature coefficient of frequency (TCF) of the elastic wave resonator can be suppressed. The metal film 12 is, for example, an aluminum film or a copper film. An insulating film functioning as a protective film or a temperature compensating film may be provided on the substrate 10 so as to cover the electrode fingers 14 .

［比較例１］
図２（ａ）および図２（ｂ）は、比較例１に係る弾性波共振器の断面図である。図２（ａ）に示すように、圧電基板１０ａ上に弾性波共振器２０ａおよび配線２２ａが設けられている。図２（ｂ）に示すように、圧電基板１０ａ上に弾性波共振器２０ｂおよび配線２２ｂが設けられている。弾性波共振器２０ａおよび２０ｂは、例えばデュプレクサのそれぞれ受信フィルタおよび送信フィルタに用いられる。送信フィルタと受信フィルタとでは通過帯域が重ならない。このため、弾性波共振器２０ａと２０ｂとの共振周波数は大きく異なる。弾性波共振器２０ｂは２０ａより共振周波数が低い。 [Comparative Example 1]
2A and 2B are cross-sectional views of an elastic wave resonator according to Comparative Example 1. FIG. As shown in FIG. 2A, an elastic wave resonator 20a and wiring 22a are provided on a piezoelectric substrate 10a. As shown in FIG. 2B, an elastic wave resonator 20b and wiring 22b are provided on the piezoelectric substrate 10a. Acoustic wave resonators 20a and 20b are used, for example, in a receive filter and a transmit filter, respectively, of a duplexer. The passbands of the transmit filter and the receive filter do not overlap. Therefore, the resonance frequencies of the elastic wave resonators 20a and 20b are significantly different. The elastic wave resonator 20b has a lower resonance frequency than 20a.

弾性波共振器２０ｂの共振周波数を弾性波共振器２０ａの共振周波数より低くするため、弾性波共振器２０ｂの電極指１４のピッチＬ２は、弾性波共振器２０ａの電極指１４のピッチＬ１より大きい。また、弾性波共振器２０ｂの電極指１４の膜厚Ｈ２は、弾性波共振器２０ａの電極指１４の膜厚Ｈ１より大きい。弾性波共振器２０ａを形成したチップと弾性波共振器２０ｂを形成したチップをパッケージに実装することで、例えばデュプレクサが形成できる。しかしながら複数のチップをパッケージに実装するとデュプレクサ等の弾性波デバイスが大型化する。 In order to make the resonance frequency of the elastic wave resonator 20b lower than the resonance frequency of the elastic wave resonator 20a, the pitch L2 of the electrode fingers 14 of the elastic wave resonator 20b is larger than the pitch L1 of the electrode fingers 14 of the elastic wave resonator 20a. . Further, the film thickness H2 of the electrode fingers 14 of the elastic wave resonator 20b is larger than the film thickness H1 of the electrode fingers 14 of the elastic wave resonator 20a. A duplexer, for example, can be formed by mounting a chip in which the acoustic wave resonator 20a is formed and a chip in which the acoustic wave resonator 20b is formed in a package. However, mounting a plurality of chips in a package increases the size of an acoustic wave device such as a duplexer.

［比較例２］
図３は、比較例２に係る弾性波デバイスの断面図である。図３に示すように、弾性波共振器２０ａおよび２０ｂは単一の基板１０上に設けられている。電極指１４を覆うように絶縁膜２４が設けられている。絶縁膜２４は、例えば酸化シリコン膜または窒化シリコン膜であり、保護膜または温度補償膜として機能する。弾性波共振器２０ａと２０ｂとの共振周波数を異ならせるため、絶縁膜２４の電極指１４上の膜厚Ｈ１´およびＨ２´を異ならせてもよい。 [Comparative Example 2]
FIG. 3 is a cross-sectional view of an acoustic wave device according to Comparative Example 2. FIG. As shown in FIG. 3, acoustic wave resonators 20 a and 20 b are provided on a single substrate 10 . An insulating film 24 is provided to cover the electrode fingers 14 . The insulating film 24 is, for example, a silicon oxide film or a silicon nitride film, and functions as a protective film or a temperature compensation film. In order to differentiate the resonance frequencies of the elastic wave resonators 20a and 20b, the film thicknesses H1' and H2' of the insulating film 24 on the electrode fingers 14 may be varied.

比較例２のように、弾性波共振器２０ａと２０ｂを単一基板１０上に形成すると弾性波デバイスを小型化できる。弾性波共振器２０ａと２０ｂとの共振周波数を大きく異ならせるためには、電極指のピッチを異ならせる、電極指１４の膜厚を異ならせる、および／または電極指１４を覆う絶縁膜２４の膜厚を異ならせる、等の方法がある。しかしながら、ピッチＬ１およびＬ２を大きく異ならせようとすると、加工精度が低下してしまう。また、膜厚Ｈ１とＨ２、および／または膜厚Ｈ１´とＨ２´を大きく異ならせようとすると、製造工程が複雑になる。そこで、上記以外の方法で共振周波数を大きく異ならせる方法を検討した。 If the acoustic wave resonators 20a and 20b are formed on the single substrate 10 as in Comparative Example 2, the size of the acoustic wave device can be reduced. In order to make the resonance frequencies of the acoustic wave resonators 20a and 20b significantly different, the pitch of the electrode fingers is made different, the film thickness of the electrode fingers 14 is made different, and/or the insulating film 24 covering the electrode fingers 14 is changed. There is a method such as making the thickness different. However, if it is attempted to make the pitches L1 and L2 significantly different from each other, the machining accuracy will be degraded. Further, if the film thicknesses H1 and H2 and/or the film thicknesses H1' and H2' are to be greatly different, the manufacturing process becomes complicated. Therefore, methods other than those described above were investigated to greatly differ the resonance frequencies.

［シミュレーション］
圧電基板１０ａの厚さＴに対する弾性波共振器２０の共振周波数を３次元有限要素法を用いシミュレーションした。シミュレーション条件は以下である。
支持基板１０ｂ：厚さが５００μｍのサファイア基板
圧電基板１０ａ：厚さＴの４２°回転ＹカットＸ伝搬タンタル酸リチウム基板
金属膜１２：膜厚が４００ｎｍのアルミニウム膜
電極指１４のピッチＬ：２０μｍ
電極指１４の対数：１００対
開口長（交差領域５６の長さ）：２５λ [simulation]
The resonance frequency of the acoustic wave resonator 20 with respect to the thickness T of the piezoelectric substrate 10a was simulated using the three-dimensional finite element method. The simulation conditions are as follows.
Support substrate 10b: sapphire substrate with a thickness of 500 μm Piezoelectric substrate 10a: 42° rotated Y-cut X-propagation lithium tantalate substrate with thickness T Metal film 12: aluminum film with a thickness of 400 nm Pitch L of electrode fingers 14: 20 μm
Number of pairs of electrode fingers 14: 100 pairs Opening length (length of intersection region 56): 25λ

図４（ａ）および図４（ｂ）は、圧電基板の厚さＴ／ピッチＬに対する共振周波数ｆｒを示す図である。図４（ｂ）は、図４（ａ）の範囲Ａの拡大図である。ドットはシミュレーション結果を示し、ドットをつなぐ曲線は近似曲線である。圧電基板１０ａの厚さＴはピッチＬで規格化している。図４（ａ）および図４（ｂ）に示すように、圧電基板１０ａの厚さＴがピッチＬ以上では共振周波数ｆｒはほぼ一定である。このとき電極指１４が励振する弾性表面波の波長はほぼピッチＬである。圧電基板１０ａの厚さＴがピッチＬ以下となると、共振周波数ｆｒが高くなる。 4(a) and 4(b) are diagrams showing the resonance frequency fr with respect to the thickness T/pitch L of the piezoelectric substrate. FIG. 4(b) is an enlarged view of area A in FIG. 4(a). Dots indicate simulation results, and a curve connecting the dots is an approximated curve. The thickness T of the piezoelectric substrate 10a is standardized by the pitch L. As shown in FIG. As shown in FIGS. 4A and 4B, when the thickness T of the piezoelectric substrate 10a is equal to or greater than the pitch L, the resonance frequency fr is substantially constant. At this time, the wavelength of the surface acoustic wave excited by the electrode fingers 14 is approximately the pitch L. FIG. When the thickness T of the piezoelectric substrate 10a becomes equal to or less than the pitch L, the resonance frequency fr increases.

厚さＴがピッチＬ以上のとき、電極指１４は弾性表面波（例えばＳＨ（Shear Horizontal）波）を励振するときにバルク波を励振する。このバルク波が圧電基板１０ａと支持基板１０ｂとの界面で反射されると、スプリアスとなる。また、バルク波が励振されるため弾性波共振器の損失が大きくなる。これに対し、厚さＴがピッチＬ以下ではバルク波に起因したスプリアスおよび損失が抑制される。図４（ａ）および図４（ｂ）のように、厚さＴがピッチＬ以下のときに共振周波数ｆｒが厚さＴに大きく依存する理由は明確ではないが、バルク波の抑制が起因していると考えられる。 When the thickness T is equal to or greater than the pitch L, the electrode fingers 14 excite bulk waves when exciting surface acoustic waves (for example, SH (Shear Horizontal) waves). When this bulk wave is reflected at the interface between the piezoelectric substrate 10a and the support substrate 10b, it becomes spurious. Moreover, since the bulk wave is excited, the loss of the acoustic wave resonator increases. On the other hand, when the thickness T is equal to or less than the pitch L, spurious and loss caused by bulk waves are suppressed. Although it is not clear why the resonance frequency fr greatly depends on the thickness T when the thickness T is equal to or less than the pitch L as shown in FIGS. It is thought that

シミュレーション結果に基づき実施例について説明する。図５（ａ）および図５（ｂ）は、実施例１に係る弾性波デバイスの断面図である。図５（ａ）および図５（ｂ）に示すように、圧電基板１０ａは厚さがＴ１の領域３０と厚さがＴ２の領域３２を有している。領域３０上には弾性波共振器２０ａおよび配線２２ａが設けられ、領域３２上には弾性波共振器２０ｂおよび配線２２ｂが設けられている。弾性波共振器２０ａおよび２０ｂの電極指１４のピッチＬ１およびＬ２は同程度である。弾性波共振器２０ａおよび２０ｂの電極指１４を覆うように絶縁膜２４が設けられている。弾性波共振器２０ａと２０ｂでは、電極指１４の膜厚は製造誤差程度に略同じであり、絶縁膜２４の膜厚は製造誤差程度に略同じである。厚さＴ１およびＴ２のうち少なくとも厚さＴ１はピッチＬ１より小さい。これにより、電極指１４および絶縁膜２４の膜厚がほぼ同じでも弾性波共振器２０ａと２０ｂとの共振周波数を大きく異ならせることができる。なお、絶縁膜２４は電極指１４より薄くてもよいし、厚くてもよい。また、絶縁膜２４は設けられていなくてもよい。 Examples will be described based on simulation results. 5A and 5B are cross-sectional views of the acoustic wave device according to Example 1. FIG. As shown in FIGS. 5A and 5B, the piezoelectric substrate 10a has a region 30 with a thickness of T1 and a region 32 with a thickness of T2. An elastic wave resonator 20a and a wiring 22a are provided on the region 30, and an elastic wave resonator 20b and a wiring 22b are provided on the region 32. FIG. The pitches L1 and L2 of the electrode fingers 14 of the acoustic wave resonators 20a and 20b are approximately the same. An insulating film 24 is provided to cover the electrode fingers 14 of acoustic wave resonators 20a and 20b. In the elastic wave resonators 20a and 20b, the film thickness of the electrode fingers 14 is substantially the same within a manufacturing error, and the film thickness of the insulating film 24 is substantially the same within a manufacturing error. At least the thickness T1 of the thicknesses T1 and T2 is smaller than the pitch L1. As a result, even if the film thicknesses of the electrode fingers 14 and the insulating film 24 are substantially the same, the resonance frequencies of the acoustic wave resonators 20a and 20b can be made significantly different. Note that the insulating film 24 may be thinner or thicker than the electrode fingers 14 . Also, the insulating film 24 may not be provided.

図６は、実施例１を用いたデュプレクサの回路図である。図６に示すように、共通端子Ａｎｔと送信端子Ｔｘの間に送信フィルタ５０が接続され、共通端子Ａｎｔと受信端子Ｒｘとの間に受信フィルタ５２が接続されている。送信フィルタ５０では、共通端子Ａｎｔと送信端子Ｔｘとの間に１または複数の直列共振器Ｓ１からＳ４が直列に接続され、１または並列共振器Ｐ１からＰ３が並列に接続されている。 FIG. 6 is a circuit diagram of a duplexer using the first embodiment. As shown in FIG. 6, a transmission filter 50 is connected between the common terminal Ant and the transmission terminal Tx, and a reception filter 52 is connected between the common terminal Ant and the reception terminal Rx. In the transmission filter 50, one or more series resonators S1 to S4 are connected in series between a common terminal Ant and a transmission terminal Tx, and one or more parallel resonators P1 to P3 are connected in parallel.

受信フィルタ５２では、共通端子Ａｎｔと受信端子Ｒｘとの間に直列共振器Ｓ５、ＤＭＳ１およびＤＭＳ２が直列に接続されている。ＤＭＳ１およびＤＭＳ２は２重モード弾性表面波（Double Mode Surface Acoustic）フィルタ等の多重モード型フィルタである。ＤＭＳ１およびＤＭＳ２は各々３つのＩＤＴ１８ａから１８ｃを有している。ＩＤＴ１８ａから１８ｃは弾性波の伝搬方向に配列されている。ＤＭＳ１のＩＤＴ１８ｂの一端は直列共振器Ｓ５に電気的に接続され、他端は接地されている。ＤＭＳ１のＩＤＴ１８ａおよび１８ｃの一端はそれぞれＤＭＳ２のＩＤＴ１８ａおよび１８ｃの一端に電気的に接続されている。ＤＭＳ１およびＤＭＳ２のＩＤＴ１８ａおよび１８ｃの他端は接地されている。ＤＭＳ２のＩＤＴ１８ｂの一端は受信端子Ｒｘに電気的接続され、他端は接地されている。 In the receive filter 52, the series resonators S5, DMS1 and DMS2 are connected in series between the common terminal Ant and the receive terminal Rx. DMS1 and DMS2 are multimode filters such as Double Mode Surface Acoustic filters. DMS1 and DMS2 each have three IDTs 18a to 18c. The IDTs 18a to 18c are arranged in the acoustic wave propagation direction. One end of the IDT 18b of DMS1 is electrically connected to the series resonator S5, and the other end is grounded. One ends of the IDTs 18a and 18c of DMS1 are electrically connected to one ends of the IDTs 18a and 18c of DMS2, respectively. The other ends of IDTs 18a and 18c of DMS1 and DMS2 are grounded. One end of the IDT 18b of the DMS2 is electrically connected to the receiving terminal Rx, and the other end is grounded.

送信フィルタ５０は送信端子Ｔｘに入力する高周波信号のうち送信帯域の信号を共通端子Ａｎｔに通過させ、他の周波数帯域の信号を抑圧する。受信フィルタ５２は共通端子Ａｎｔに入力する高周波信号のうち受信帯域の信号を受信端子Ｒｘに通過させ、他の周波数帯域の信号を抑圧する。送信フィルタ５０がラダー型フィルタを含み、受信フィルタ５２が多重モード型フィルタを含む例を説明したが、送信フィルタ５０が多重モード型フィルタを含み、受信フィルタ５２を含んでもよい。送信フィルタ５０および受信フィルタ５２はいずれもラダー型フィルタを含んでもよい。また、送信フィルタ５０および受信フィルタ５２内の共振器の個数は適宜設定できる。 The transmission filter 50 passes through the common terminal Ant signals in the transmission band among the high-frequency signals input to the transmission terminal Tx, and suppresses signals in other frequency bands. The reception filter 52 allows signals in the reception band among the high-frequency signals input to the common terminal Ant to pass through the reception terminal Rx, and suppresses signals in other frequency bands. Although an example in which transmission filter 50 includes a ladder filter and reception filter 52 includes a multimode filter has been described, transmission filter 50 may include a multimode filter and reception filter 52 . Both transmit filter 50 and receive filter 52 may include ladder-type filters. Also, the number of resonators in the transmission filter 50 and the reception filter 52 can be set appropriately.

図７は、実施例１における基板１０の平面図である。図７に示すように、圧電基板１０ａの領域３０上に弾性波共振器２０ａおよび配線２２ａが設けられている。弾性波共振器２０ａは直列共振器Ｓ５、ＤＭＳ１およびＤＭＳ２を含む。配線２２ａは弾性波共振器２０ａと接続されている。配線２２ｃは配線２２ａと立体交差している。配線２２ａは共通パッドＰａｎｔ、受信パッドＰｒｘおよびグランドパッドＰｇｎｄを含む。パッド上にはバンプ２６が設けられている。 FIG. 7 is a plan view of the substrate 10 in Example 1. FIG. As shown in FIG. 7, an elastic wave resonator 20a and wiring 22a are provided on a region 30 of a piezoelectric substrate 10a. Acoustic wave resonator 20a includes series resonators S5, DMS1 and DMS2. The wiring 22a is connected to the acoustic wave resonator 20a. The wiring 22c crosses over the wiring 22a. The wiring 22a includes a common pad Pant, a receiving pad Prx and a ground pad Pgnd. A bump 26 is provided on the pad.

圧電基板１０ａの領域３２上に弾性波共振器２０ｂおよび配線２２ｂが設けられている。弾性波共振器２０ｂは直列共振器Ｓ１からＳ４、並列共振器Ｐ１からＰ３を含む。配線２２ｂは弾性波共振器２０ｂと接続されている。配線２２ｂは共通パッドＰａｎｔ、送信パッドＰｔｘおよびグランドパッドＰｇｎｄを含む。パッド上にはバンプ２６が設けられている。共通パッドＰａｎｔ、送信パッドＰｔｘ、受信パッドＰｒｘおよびグランドパッドＰｇｎｄは、バンプ２６を介し共通端子Ａｎｔ、送信端子Ｔｘ、受信端子Ｒｘおよびグランド端子に電気的に接続されている。 An elastic wave resonator 20b and a wiring 22b are provided on a region 32 of the piezoelectric substrate 10a. Acoustic wave resonator 20b includes series resonators S1 to S4 and parallel resonators P1 to P3. The wiring 22b is connected to the elastic wave resonator 20b. The wiring 22b includes a common pad Pant, a transmission pad Ptx and a ground pad Pgnd. A bump 26 is provided on the pad. Common pad Pant, transmission pad Ptx, reception pad Prx and ground pad Pgnd are electrically connected to common terminal Ant, transmission terminal Tx, reception terminal Rx and ground terminal via bumps 26 .

送信フィルタ５０と受信フィルタ５２との通過帯域は重ならず、送信フィルタ５０の通過帯域は受信フィルタ５２の通過帯域より低い。領域３０の圧電基板１０ａの厚さＴ１を領域３２の圧電基板１０ａの厚さＴ２より小さくしている。このため、弾性波共振器２０ａと２０ｂとで、電極指１４の膜厚をほぼ同じにし、絶縁膜２４の膜厚をほぼ同じしても、弾性波共振器２０ａの共振周波数を弾性波共振器２０ｂの共振周波数より大きくできる。送信フィルタ５０（および受信フィルタ５２）内の弾性波共振器２０ｂ（および２０ａ）の間の共振周波数の差は小さいため電極指１４のピッチＬ２（またはＬ１）を異ならせることで対応できる。よって、簡単な製造工程で単一基板１０上に共振周波数の大きく異なる弾性波共振器２０ａおよび２０ｂを形成することができる。よって、単一基板１０上に通過帯域の重ならない送信フィルタ５０と受信フィルタ５２を形成することができる。 The passbands of the transmit filter 50 and the receive filter 52 do not overlap, and the passband of the transmit filter 50 is lower than the passband of the receive filter 52 . The thickness T1 of the piezoelectric substrate 10a in the region 30 is made smaller than the thickness T2 of the piezoelectric substrate 10a in the region 32. As shown in FIG. Therefore, even if the film thickness of the electrode fingers 14 and the film thickness of the insulating film 24 are substantially the same between the elastic wave resonators 20a and 20b, the resonance frequency of the elastic wave resonator 20a is set to that of the elastic wave resonator. 20b can be higher than the resonant frequency. Since the difference in resonance frequency between the acoustic wave resonators 20b (and 20a) in the transmission filter 50 (and the reception filter 52) is small, it can be dealt with by varying the pitch L2 (or L1) of the electrode fingers 14. FIG. Therefore, acoustic wave resonators 20a and 20b having greatly different resonance frequencies can be formed on a single substrate 10 by a simple manufacturing process. Therefore, the transmission filter 50 and the reception filter 52 whose passbands do not overlap can be formed on the single substrate 10 .

図５（ａ）のように、送信フィルタ５０の通過帯域が受信フィルタ５２の通過帯域より低い場合、領域３２および３０にそれぞれ送信フィルタ５０および受信フィルタ５２を形成する。図５（ｂ）のように、送信フィルタ５０の通過帯域が受信フィルタ５２の通過帯域より高い場合、領域３０および３２にそれぞれ送信フィルタ５０および受信フィルタ５２を形成する。図５（ａ）および図５（ｂ）において、支持基板１０ｂの厚さは例えば５０μｍから５００μｍであり、厚さＴ１およびＴ２の少なくとも一方はピッチＬ１およびＬ２以下である。 As shown in FIG. 5A, when the passband of the transmission filter 50 is lower than that of the reception filter 52, the transmission filter 50 and the reception filter 52 are formed in the regions 32 and 30, respectively. As shown in FIG. 5B, when the passband of the transmission filter 50 is higher than the passband of the reception filter 52, the transmission filter 50 and the reception filter 52 are formed in the regions 30 and 32, respectively. In FIGS. 5A and 5B, the thickness of the support substrate 10b is, for example, 50 μm to 500 μm, and at least one of the thicknesses T1 and T2 is equal to or less than the pitches L1 and L2.

［実施例１の製造方法］
図８（ａ）から図９（ｄ）は、実施例１に係る弾性波デバイスの製造方法を示す断面図である。図８（ａ）に示すように、支持基板１０ｂの上面に圧電基板１０ａの下面を、常温において直接接合する。接合方法は例えば特許文献１と同じである。すなわち、支持基板１０ｂの上面および圧電基板１０ａの下面を不活性元素のイオンビーム、中性ビームまたはプラズマにより活性化する。その後支持基板１０ｂと圧電基板１０ａとを常温において接合する。このとき、支持基板１０ｂと圧電基板１０ａとの間には、例えば１ｎｍから８ｎｍの厚さのアモルファス層１０ｄが形成される。このように、支持基板１０ｂと圧電基板１０ａとを常温において接合すると、アモルファス層１０ｄが形成される。アモルファス層１０ｄは圧電基板１０ａに比べ非常に薄いため、支持基板１０ｂと圧電基板１０ａとは直接接合されている。アモルファス層１０ｄは非常に薄いため図８（ａ）および図１３（ｂ）以外の図では図示を省略する。 [Manufacturing method of Example 1]
8A to 9D are cross-sectional views showing the method of manufacturing the acoustic wave device according to the first embodiment. As shown in FIG. 8A, the lower surface of the piezoelectric substrate 10a is directly bonded to the upper surface of the support substrate 10b at room temperature. The joining method is the same as that in Patent Document 1, for example. That is, the upper surface of the support substrate 10b and the lower surface of the piezoelectric substrate 10a are activated by ion beams of inert elements, neutral beams, or plasma. After that, the support substrate 10b and the piezoelectric substrate 10a are bonded at room temperature. At this time, an amorphous layer 10d having a thickness of, for example, 1 nm to 8 nm is formed between the supporting substrate 10b and the piezoelectric substrate 10a. When the support substrate 10b and the piezoelectric substrate 10a are thus bonded at room temperature, the amorphous layer 10d is formed. Since the amorphous layer 10d is much thinner than the piezoelectric substrate 10a, the supporting substrate 10b and the piezoelectric substrate 10a are directly bonded. Since the amorphous layer 10d is very thin, its illustration is omitted in the figures other than FIGS. 8(a) and 13(b).

図８（ｂ）に示すように、圧電基板１０ａの上面を、例えばＣＭＰ（Chemical Mechanical Polishing）法を用い研磨することで平坦化する。図８（ｃ）に示すように、領域３０の圧電基板１０ａを薄膜化する。例えば圧電基板１０ａの上面にレーザ光５４を照射しアブレーション加工する。これにより、領域３０の圧電基板１０ａが薄膜化する。図８（ｄ）に示すように、圧電基板１０ａの領域３０および３２上に、例えば真空蒸着法またはスパッタリング法を用い金属膜１２を成膜する。図８（ｅ）に示すように、金属膜１２を、例えばフォトリソグラフィ法およびエッチング法を用い所望の形状にパターンニングする。これにより、圧電基板１０ａの領域３０上に弾性波共振器２０ａおよび配線２２ａが形成され、領域３２上に弾性波共振器２０ｂおよび配線２２ｂが形成される。 As shown in FIG. 8B, the upper surface of the piezoelectric substrate 10a is flattened by polishing using, for example, a CMP (Chemical Mechanical Polishing) method. As shown in FIG. 8C, the piezoelectric substrate 10a in the region 30 is thinned. For example, the upper surface of the piezoelectric substrate 10a is irradiated with a laser beam 54 for ablation. As a result, the piezoelectric substrate 10a in the region 30 is thinned. As shown in FIG. 8(d), the metal film 12 is formed on the regions 30 and 32 of the piezoelectric substrate 10a using, for example, vacuum deposition or sputtering. As shown in FIG. 8E, the metal film 12 is patterned into a desired shape using, for example, photolithography and etching. Thereby, the acoustic wave resonator 20a and the wiring 22a are formed on the region 30 of the piezoelectric substrate 10a, and the acoustic wave resonator 20b and the wiring 22b are formed on the region 32. FIG.

図９（ａ）に示すように、弾性波共振器２０ａ、２０ｂを覆うように絶縁膜２４を例えば真空蒸着法、スパッタリング法またはＣＶＤ（Chemical Vapor Deposition）法を用い成膜する。図９（ｂ）に示すように、絶縁膜２４を、例えばフォトリソグラフィ法およびエッチング法を用い所望の形状にパターンニングする。これにより、弾性波共振器２０ａおよび２０ｂの電極指１４上の絶縁膜２４は残存し、配線２２ａおよび２２ｂ上の絶縁膜２４が除去される。図９（ｃ）に示すように、配線２２ａ、２２ｂおよび絶縁膜２４上に、例えば真空蒸着法、スパッタリング法またはめっき法を用い金属膜２７を成膜する。金属膜２７は例えば金膜である。図９（ｄ）に示すように、金属膜２７を、例えばフォトリソグラフィ法およびエッチング法を用い所望の形状にパターンニングする。これにより、配線２２ａおよび２２ｂ上に低抵抗な金属膜２８が形成され、弾性波共振器２０ａおよび２０ｂ上の金属膜２７が除去される。 As shown in FIG. 9A, an insulating film 24 is formed so as to cover the acoustic wave resonators 20a and 20b using, for example, a vacuum deposition method, a sputtering method, or a CVD (Chemical Vapor Deposition) method. As shown in FIG. 9B, the insulating film 24 is patterned into a desired shape using, for example, photolithography and etching. As a result, the insulating film 24 on the electrode fingers 14 of the acoustic wave resonators 20a and 20b remains, and the insulating film 24 on the wirings 22a and 22b is removed. As shown in FIG. 9C, a metal film 27 is formed on the wirings 22a and 22b and the insulating film 24 using, for example, a vacuum deposition method, a sputtering method, or a plating method. The metal film 27 is, for example, a gold film. As shown in FIG. 9D, the metal film 27 is patterned into a desired shape using, for example, photolithography and etching. Thereby, a low resistance metal film 28 is formed on the wirings 22a and 22b, and the metal film 27 on the elastic wave resonators 20a and 20b is removed.

図８（ａ）から図９（ｄ）のように、図８（ｃ）の領域３０の圧電基板１０ａの薄膜化以外の製造工程は、弾性波共振器２０ａと２０ｂとで共通にできる。よって、共振周波数の異なる弾性波共振器２０ａおよび２０ｂを容易に製造することができる。 As shown in FIGS. 8(a) to 9(d), the elastic wave resonators 20a and 20b can share the manufacturing process except for thinning the piezoelectric substrate 10a in the region 30 of FIG. 8(c). Therefore, elastic wave resonators 20a and 20b having different resonance frequencies can be easily manufactured.

図１０（ａ）および図１０（ｂ）は、実施例２に係る弾性波デバイスの断面図である。図１０（ａ）および図１０（ｂ）に示すように、中間層１０ｃが支持基板１０ｂと圧電基板１０ａとの間に挟まれている。中間層１０ｃの弾性率の温度係数は圧電基板１０ａの弾性率の温度係数と逆符号である。これにより、弾性波共振器２０ａおよび２０ｂの周波数温度係数（ＴＣＦ）をより抑制できる。中間層１０ｃとしては例えば酸化シリコン膜、シリコン膜、窒化アルミニウム膜または窒化シリコン膜を用いることができる。中間層１０ｃの厚さは例えばピッチＬ１およびＬ２以下である。その他の構成は実施例１と同じであり説明を省略する。 10A and 10B are cross-sectional views of an acoustic wave device according to Example 2. FIG. As shown in FIGS. 10(a) and 10(b), the intermediate layer 10c is sandwiched between the support substrate 10b and the piezoelectric substrate 10a. The temperature coefficient of the elastic modulus of the intermediate layer 10c is opposite in sign to the temperature coefficient of the elastic modulus of the piezoelectric substrate 10a. Thereby, the temperature coefficient of frequency (TCF) of the acoustic wave resonators 20a and 20b can be further suppressed. For example, a silicon oxide film, a silicon film, an aluminum nitride film, or a silicon nitride film can be used as the intermediate layer 10c. The thickness of the intermediate layer 10c is, for example, equal to or less than the pitches L1 and L2. Other configurations are the same as those of the first embodiment, and description thereof is omitted.

［実施例２の変形例１］
図１１（ａ）および図１１（ｂ）は、実施例２の変形例１に係る弾性波デバイスの断面図である。図１１（ａ）および図１１（ｂ）に示すように、領域３０における中間層１０ｃの厚さＴ３は領域３２における中間層１０ｃの厚さＴ４より大きい。厚さＴ１＋Ｔ３は厚さＴ２＋Ｔ４にほぼ等しい。これにより、圧電基板１０ａの領域３０と３２との境界の上面はほぼ平坦である。 [Modification 1 of Embodiment 2]
11A and 11B are cross-sectional views of an acoustic wave device according to Modification 1 of Embodiment 2. FIG. 11(a) and 11(b), thickness T3 of intermediate layer 10c in region 30 is greater than thickness T4 of intermediate layer 10c in region 32. As shown in FIGS. Thickness T1+T3 is approximately equal to thickness T2+T4. As a result, the upper surface of the boundary between the regions 30 and 32 of the piezoelectric substrate 10a is substantially flat.

［実施例２の変形例１の製造方法］
図１２（ａ）から図１４（ｂ）は、実施例２の変形例１に係る弾性波デバイスの製造方法を示す断面図である。図１２（ａ）に示すように圧電基板１０ａを準備する。図１２（ｂ）に示すように、領域３０の圧電基板１０ａを薄膜化する。例えば領域３０の圧電基板１０ａの表面にレーザ光５４を照射しアブレーション加工する。これにより、圧電基板１０ａに領域３０および３２が形成される。図１２（ｃ）に示すように、段差を有する圧電基板１０ａ表面上に中間層１０ｃを例えば真空蒸着法、スパッタリング法またはＣＶＤ法を用い成膜する。図１２（ｄ）に示すように、中間層１０ｃの表面を例えばＣＭＰ法を用い平坦化する。 [Manufacturing method of modification 1 of embodiment 2]
12A to 14B are cross-sectional views showing a method of manufacturing an acoustic wave device according to Modification 1 of Embodiment 2. FIG. A piezoelectric substrate 10a is prepared as shown in FIG. As shown in FIG. 12B, the piezoelectric substrate 10a in the region 30 is thinned. For example, the surface of the piezoelectric substrate 10a in the region 30 is irradiated with a laser beam 54 for ablation. Thereby, regions 30 and 32 are formed in the piezoelectric substrate 10a. As shown in FIG. 12(c), an intermediate layer 10c is formed on the surface of the piezoelectric substrate 10a having steps by using, for example, a vacuum deposition method, a sputtering method, or a CVD method. As shown in FIG. 12(d), the surface of the intermediate layer 10c is planarized using, for example, the CMP method.

図１３（ａ）に示すように、以下上下を逆に示す。図１３（ｂ）に示すように、支持基板１０ｂの上面と平坦化した中間層１０ｃの表面とを常温において直接接合する。このとき、図８（ａ）と同様に、支持基板１０ｂと中間層１０ｃとの間にアモルファス層１０ｄが形成される。中間層１０ｃが酸化シリコン膜の場合、酸化シリコン膜と支持基板１０ｂとの常温接合が難しいことがある。支持基板１０ｂと中間層１０ｃとを常温接合する場合、中間層１０ｃはシリコン膜、窒化アルミニウム膜または窒化シリコン膜等の酸化シリコン膜以外の絶縁膜であることが好ましい。図１３（ｃ）に示すように、圧電基板１０ａの上面を例えばＣＭＰ法を用い平坦化する。これにより、支持基板１０ｂと圧電基板１０ａとの間に中間層１０ｃを有する複合基板である基板１０が形成される。 As shown in FIG. 13(a), the following is shown upside down. As shown in FIG. 13B, the upper surface of the support substrate 10b and the planarized surface of the intermediate layer 10c are directly bonded at room temperature. At this time, an amorphous layer 10d is formed between the support substrate 10b and the intermediate layer 10c, as in FIG. 8(a). When the intermediate layer 10c is a silicon oxide film, room temperature bonding between the silicon oxide film and the support substrate 10b may be difficult. When the support substrate 10b and the intermediate layer 10c are bonded at room temperature, the intermediate layer 10c is preferably an insulating film other than a silicon oxide film, such as a silicon film, an aluminum nitride film, or a silicon nitride film. As shown in FIG. 13(c), the upper surface of the piezoelectric substrate 10a is flattened using, for example, the CMP method. As a result, the substrate 10, which is a composite substrate having the intermediate layer 10c between the support substrate 10b and the piezoelectric substrate 10a, is formed.

図１４（ａ）に示すように、図８（ｄ）および図８（ｅ）と同様に、圧電基板１０ａの領域３０上に弾性波共振器２０ａおよび配線２２ａを形成し、領域３２上に弾性波共振器２０ｂおよび配線２２ｂを形成する。図１４（ｂ）に示すように、図９（ａ）から図９（ｄ）と同様に絶縁膜２４および金属膜２８を形成する。 As shown in FIG. 14(a), similar to FIGS. 8(d) and 8(e), elastic wave resonators 20a and wires 22a are formed on the region 30 of the piezoelectric substrate 10a, and elastic wave resonators 20a and 22a are formed on the region 32 of the piezoelectric substrate 10a. A wave resonator 20b and wiring 22b are formed. As shown in FIG. 14(b), an insulating film 24 and a metal film 28 are formed in the same manner as in FIGS. 9(a) to 9(d).

実施例２の変形例１では、圧電基板１０ａの領域３０と３２との上面が平坦である。このため、圧電基板１０ａ上への弾性波共振器２０ａおよび２０ｂ、配線２２ａおよび２２ｂ等の形成が容易となる。また、圧電基板１０ａをバンプを用い実装するときにバンプの高さが均一となりバンプの接続性が安定する。 In modification 1 of embodiment 2, the upper surfaces of regions 30 and 32 of piezoelectric substrate 10a are flat. Therefore, it becomes easy to form the elastic wave resonators 20a and 20b, the wirings 22a and 22b, etc. on the piezoelectric substrate 10a. Also, when the piezoelectric substrate 10a is mounted using bumps, the height of the bumps becomes uniform and the connectivity of the bumps is stabilized.

実施例１，２およびその変形例によれば、圧電基板１０ａは、厚さＴ１（第１の厚さ）を有する領域３０（第１領域）と厚さＴ２（第１の厚さより大きい第２の厚さ）を有する領域３２（第２領域）とを有する。領域３０上に設けられた弾性波共振器２０ａ（第１弾性波共振器）は、複数の電極指１４（第１電極指）を各々有する一対の櫛型電極１６（第１櫛型電極）を備え、櫛型電極１６の一方の電極指１４の平均ピッチＬ１は厚さＴ１より大きい。領域３２上に設けられた弾性波共振器２０ｂ（第２弾性波共振器）、複数の電極指１４（第２電極指）を各々有する一対の櫛型電極１６（第２櫛型電極）を備える。 According to Examples 1 and 2 and their modifications, the piezoelectric substrate 10a has a region 30 (first region) having a thickness T1 (first thickness) and a second region 30 having a thickness T2 (larger than the first thickness). and a region 32 (second region) having a thickness of . The acoustic wave resonator 20a (first acoustic wave resonator) provided on the region 30 includes a pair of comb-shaped electrodes 16 (first comb-shaped electrodes) each having a plurality of electrode fingers 14 (first electrode fingers). The average pitch L1 of one electrode finger 14 of the comb-shaped electrode 16 is larger than the thickness T1. An acoustic wave resonator 20b (second acoustic wave resonator) provided on the region 32, and a pair of comb-shaped electrodes 16 (second comb-shaped electrodes) each having a plurality of electrode fingers 14 (second electrode fingers). .

これにより、図４（ａ）および図４（ｂ）のように、弾性波共振器２０ａの共振周波数を弾性波共振器２０ｂの共振周波数より高くできる。よって、共振周波数の異なる弾性波共振器２０ａおよび２０ｂを容易に形成することができる。また、弾性波共振器２０ａにおけるスプリアスおよび損失を抑制できる。 Thereby, as shown in FIGS. 4A and 4B, the resonance frequency of the elastic wave resonator 20a can be made higher than the resonance frequency of the elastic wave resonator 20b. Therefore, elastic wave resonators 20a and 20b having different resonance frequencies can be easily formed. Also, spurious and loss in the acoustic wave resonator 20a can be suppressed.

弾性波共振器２０ｂの櫛型電極１６の一方の電極指１４の平均ピッチＬ２を厚さＴ２より大きくすることで、弾性波共振器２０ｂにおけるスプリアスおよび損失を抑制できる。平均ピッチＬ２を厚さＴ２より小さくすることで、弾性波共振器２０ａと２０ｂとの共振周波数の差を大きくできる。 By making the average pitch L2 of one electrode finger 14 of the comb-shaped electrode 16 of the elastic wave resonator 20b larger than the thickness T2, spurious and loss in the elastic wave resonator 20b can be suppressed. By making the average pitch L2 smaller than the thickness T2, the difference in resonance frequency between the elastic wave resonators 20a and 20b can be increased.

実施例１およびその変形例のように、圧電基板１０ａは支持基板１０ｂにアモルファス層１０ｄを介し接合されていてもよい。実施例２およびその変形例のように、圧電基板１０ａと支持基板１０ｂとに挟まれた中間層１０ｃを備えていてもよい。中間層１０ｃの弾性率の温度係数を圧電基板１０ａの弾性率の温度係数と逆符号とする。これにより、弾性波共振器２０ａおよび２０ｂの周波数温度係数を抑制できる。 The piezoelectric substrate 10a may be bonded to the support substrate 10b via the amorphous layer 10d as in the first embodiment and its modification. An intermediate layer 10c sandwiched between the piezoelectric substrate 10a and the support substrate 10b may be provided as in the second embodiment and its modification. The temperature coefficient of the elastic modulus of the intermediate layer 10c is assumed to be opposite in sign to the temperature coefficient of the elastic modulus of the piezoelectric substrate 10a. Thereby, the frequency temperature coefficients of the acoustic wave resonators 20a and 20b can be suppressed.

実施例２の変形例１のように、圧電基板１０ａの領域３０と支持基板１０ｂとの間の中間層１０ｃの厚さＴ３（第３の厚さ）は圧電基板１０ａの領域３２と支持基板１０ｂとの間の中間層１０ｃの厚さＴ４（第４の厚さ）より大きくする。これにより、領域３０と３２との圧電基板１０ａの上面（中間層１０ｃの反対側の面）の段差を厚さＴ１とＴ２との差より小さくする。これにより、圧電基板１０ａ上の弾性波共振器２０ａおよび２０ｂ等の形成が容易となる。領域３０と３２との圧電基板１０ａの上面は製造誤差程度に略平坦であることが好ましい。 As in Modification 1 of Embodiment 2, thickness T3 (third thickness) of intermediate layer 10c between region 30 of piezoelectric substrate 10a and support substrate 10b is equal to region 32 of piezoelectric substrate 10a and support substrate 10b. and the thickness T4 (fourth thickness) of the intermediate layer 10c between them. As a result, the step between the regions 30 and 32 on the upper surface of the piezoelectric substrate 10a (the surface opposite to the intermediate layer 10c) is made smaller than the difference between the thicknesses T1 and T2. This facilitates formation of the elastic wave resonators 20a and 20b on the piezoelectric substrate 10a. It is preferable that the upper surface of the piezoelectric substrate 10a in the regions 30 and 32 is substantially flat to the extent of manufacturing error.

弾性波共振器２０ａおよび２０ｂの櫛型電極１６が励振する弾性波はＳＨ波であることが好ましい。電極指１４がＳＨ波を励振する場合、バルク波が励振されやすい。よって、圧電基板１０ａの厚さＴ１をピッチＬ１より小さくすると、弾性波共振器２０ａの共振周波数がより高くなる。 The elastic waves excited by the comb electrodes 16 of the elastic wave resonators 20a and 20b are preferably SH waves. When electrode fingers 14 excite SH waves, bulk waves are likely to be excited. Therefore, when the thickness T1 of the piezoelectric substrate 10a is made smaller than the pitch L1, the resonance frequency of the elastic wave resonator 20a is further increased.

櫛型電極１６がＳＨ波を励振するため、圧電基板１０ａは、２０°以上かつ４８°以下のカット角を有するＹカットＸ伝搬タンタル酸リチウム基板であることが好ましい。カット角は、３０°以上が好ましく、３８°以上がより好ましい。カット角は、４６°以下が好ましく、４４°以下がより好ましい。 Since the comb-shaped electrodes 16 excite SH waves, the piezoelectric substrate 10a is preferably a Y-cut X-propagation lithium tantalate substrate having a cut angle of 20° or more and 48° or less. The cut angle is preferably 30° or more, more preferably 38° or more. The cut angle is preferably 46° or less, more preferably 44° or less.

図６および図７のように、マルチプレクサでは、受信フィルタ５２（第１フィルタ）は、１または複数の弾性波共振器２０ａを含み、送信フィルタ５０（第２フィルタ）は、１または複数の弾性波共振器２０ｂを含む。送信フィルタ５０の通過帯域と受信フィルタ５２の通過帯域とが重ならない場合、弾性波共振器２０ａと２０ｂとの共振周波数を大きく異ならせる。このため、圧電基板１０ａの厚さＴ１およびＴ２を異ならせることで共振周波数を異ならせる。これにより、同一圧電基板１０ａに通過帯域の重ならない送信フィルタ５０および受信フィルタ５２を容易に形成することができる。 6 and 7, in the multiplexer, the receive filter 52 (first filter) includes one or more acoustic wave resonators 20a, and the transmit filter 50 (second filter) includes one or more acoustic wave resonators 20a. It includes a resonator 20b. If the passband of the transmission filter 50 and the passband of the reception filter 52 do not overlap, the resonance frequencies of the elastic wave resonators 20a and 20b are made to differ greatly. Therefore, the resonance frequencies are varied by varying the thicknesses T1 and T2 of the piezoelectric substrate 10a. As a result, the transmission filter 50 and the reception filter 52 whose passbands do not overlap can be easily formed on the same piezoelectric substrate 10a.

マルチプレクサとして、デュプレクサの例を説明したが、トリプレクサまたはクワッドプレクサでもよい。圧電基板１０ａに厚さが異なる領域を３か所以上設けることで、圧電基板１０ａ上に３個以上の通過帯域の異なるフィルタを形成することもできる。 As the multiplexer, an example of a duplexer has been described, but a triplexer or a quadplexer may be used. By providing three or more regions with different thicknesses on the piezoelectric substrate 10a, three or more filters with different passbands can be formed on the piezoelectric substrate 10a.

以上、本発明の実施例について詳述したが、本発明はかかる特定の実施例に限定されるものではなく、特許請求の範囲に記載された本発明の要旨の範囲内において、種々の変形・変更が可能である。 Although the embodiments of the present invention have been described in detail above, the present invention is not limited to such specific embodiments, and various modifications and variations can be made within the scope of the gist of the present invention described in the scope of claims. Change is possible.

１０ 基板
１０ａ 圧電基板
１０ｂ 支持基板
１０ｃ 中間層
１２ 金属膜
１４ 電極指
１６ 櫛型電極
２０、２０ａ、２０ｂ 弾性波共振器
３０、３２ 領域
５０ 送信フィルタ
５２ 受信フィルタ Reference Signs List 10 substrate 10a piezoelectric substrate 10b support substrate 10c intermediate layer 12 metal film 14 electrode fingers 16 comb-shaped electrodes 20, 20a, 20b elastic wave resonators 30, 32 region 50 transmission filter 52 reception filter

Claims (10)

支持基板と、
前記支持基板上に接合し、第１の厚さを有する第１領域と前記第１の厚さより大きい第２の厚さを有する第２領域とを有する圧電基板と、
前記圧電基板の前記第１領域上に設けられ、複数の第１電極指を各々有する一対の第１櫛型電極を備え、前記一対の第１櫛型電極の一方の第１櫛型電極における第１電極指の平均ピッチは前記第１の厚さより大きい第１弾性波共振器と、
前記圧電基板の前記第２領域上に設けられ、複数の第２電極指を各々有する一対の第２櫛型電極を備え、前記一対の第２櫛型電極の一方の第２櫛型電極における第２電極指の平均ピッチに対する前記第２の厚さの比は、前記一方の第１櫛型電極における第１電極指の平均ピッチに対する前記第１の厚さの比より大きい第２弾性波共振器と、
を備え、
前記一対の第１櫛型電極および前記一対の第２櫛型電極は主モードとしてＳＨ波を励振する弾性波デバイス。 a support substrate;
a piezoelectric substrate bonded onto the support substrate and having a first region having a first thickness and a second region having a second thickness greater than the first thickness;
a pair of first comb-shaped electrodes provided on the first region of the piezoelectric substrate, each having a plurality of first electrode fingers; a first acoustic wave resonator having an average pitch of one electrode finger larger than the first thickness;
a pair of second comb-shaped electrodes provided on the second region of the piezoelectric substrate, each having a plurality of second electrode fingers; A second acoustic wave resonator, wherein a ratio of the second thickness to an average pitch of two electrode fingers is greater than a ratio of the first thickness to an average pitch of the first electrode fingers in one of the first comb-shaped electrodes. When,
with
An elastic wave device in which the pair of first comb-shaped electrodes and the pair of second comb-shaped electrodes excite SH waves as a main mode . 前記一方の第２櫛型電極における第２電極指の平均ピッチは前記第２の厚さより大きい請求項１に記載の弾性波デバイス。 2. The acoustic wave device according to claim 1, wherein an average pitch of the second electrode fingers in said one second comb-shaped electrode is larger than said second thickness. 前記一方の第２櫛型電極における第２電極指の平均ピッチは前記第２の厚さより小さい請求項１に記載の弾性波デバイス。 2. The acoustic wave device according to claim 1, wherein an average pitch of the second electrode fingers in said one second comb-shaped electrode is smaller than said second thickness. 前記圧電基板は前記支持基板にアモルファス層を介し接合されている請求項１から３のいずれか一項に記載の弾性波デバイス。 The acoustic wave device according to any one of claims 1 to 3, wherein the piezoelectric substrate is bonded to the support substrate via an amorphous layer. 前記圧電基板と前記支持基板とに挟まれた中間層を備える請求項１から４のいずれか一項に記載の弾性波デバイス。 The acoustic wave device according to any one of claims 1 to 4, further comprising an intermediate layer sandwiched between the piezoelectric substrate and the support substrate. 前記圧電基板の前記第１領域と前記支持基板との間の前記中間層の第３の厚さは前記圧電基板の前記第２領域と前記支持基板との間の前記中間層の第４の厚さより大きい請求項５に記載の弾性波デバイス。 A third thickness of the intermediate layer between the first region of the piezoelectric substrate and the support substrate is a fourth thickness of the intermediate layer between the second region of the piezoelectric substrate and the support substrate. 6. The acoustic wave device according to claim 5, which is larger than. 前記圧電基板の前記第１領域と前記第２領域との前記中間層の反対側の面は略平坦である請求項６に記載の弾性波デバイス。 7. The acoustic wave device according to claim 6, wherein the surfaces of the first region and the second region of the piezoelectric substrate opposite to the intermediate layer are substantially flat. 前記第２弾性波共振器の共振周波数は前記第１弾性波共振器の共振周波数より低い請求項１から７のいずれか一項に記載の弾性波デバイス。 The acoustic wave device according to any one of claims 1 to 7, wherein the resonance frequency of the second acoustic wave resonator is lower than the resonance frequency of the first acoustic wave resonator. 前記圧電基板は、２０°以上かつ４８°以下のカット角を有するＹカットＸ伝搬タンタル酸リチウム基板である請求項１から８のいずれか一項に記載の弾性波デバイス。 The acoustic wave device according to any one of claims 1 to 8, wherein the piezoelectric substrate is a Y-cut X-propagation lithium tantalate substrate having a cut angle of 20° or more and 48° or less. 請求項１から９のいずれか一項に記載の弾性波デバイスを含み、
１または複数の前記第１弾性波共振器を含む第１フィルタと、
前記第１フィルタの通過帯域と重ならず、かつ前記第１フィルタの通過帯域より低い通過帯域を有し、１または複数の前記第２弾性波共振器を含む第２フィルタと、
を備えるマルチプレクサ。
comprising an acoustic wave device according to any one of claims 1 to 9,
a first filter including one or more of the first acoustic wave resonators;
a second filter having a passband that does not overlap with the passband of the first filter and is lower than the passband of the first filter, and includes one or more of the second acoustic wave resonators;
A multiplexer with
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Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10637438B2 (en) 2018-06-15 2020-04-28 Resonant Inc. Transversely-excited film bulk acoustic resonators for high power applications
US11323089B2 (en) 2018-06-15 2022-05-03 Resonant Inc. Filter using piezoelectric film bonded to high resistivity silicon substrate with trap-rich layer
US20220116015A1 (en) 2018-06-15 2022-04-14 Resonant Inc. Transversely-excited film bulk acoustic resonator with optimized electrode thickness, mark, and pitch
US10601392B2 (en) 2018-06-15 2020-03-24 Resonant Inc. Solidly-mounted transversely-excited film bulk acoustic resonator
US11936358B2 (en) 2020-11-11 2024-03-19 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with low thermal impedance
US11146232B2 (en) 2018-06-15 2021-10-12 Resonant Inc. Transversely-excited film bulk acoustic resonator with reduced spurious modes
US11323090B2 (en) 2018-06-15 2022-05-03 Resonant Inc. Transversely-excited film bulk acoustic resonator using Y-X-cut lithium niobate for high power applications
US10911023B2 (en) 2018-06-15 2021-02-02 Resonant Inc. Transversely-excited film bulk acoustic resonator with etch-stop layer
US11206009B2 (en) 2019-08-28 2021-12-21 Resonant Inc. Transversely-excited film bulk acoustic resonator with interdigital transducer with varied mark and pitch
US12155371B2 (en) 2021-03-29 2024-11-26 Murata Manufacturing Co., Ltd. Layout of xbars with multiple sub-resonators in series
US11901878B2 (en) 2018-06-15 2024-02-13 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonators with two-layer electrodes with a wider top layer
US11870423B2 (en) 2018-06-15 2024-01-09 Murata Manufacturing Co., Ltd. Wide bandwidth temperature-compensated transversely-excited film bulk acoustic resonator
US12119805B2 (en) 2018-06-15 2024-10-15 Murata Manufacturing Co., Ltd. Substrate processing and membrane release of transversely-excited film bulk acoustic resonator using a sacrificial tub
US10998882B2 (en) 2018-06-15 2021-05-04 Resonant Inc. XBAR resonators with non-rectangular diaphragms
US11996822B2 (en) 2018-06-15 2024-05-28 Murata Manufacturing Co., Ltd. Wide bandwidth time division duplex transceiver
US11146238B2 (en) 2018-06-15 2021-10-12 Resonant Inc. Film bulk acoustic resonator fabrication method
US11264966B2 (en) 2018-06-15 2022-03-01 Resonant Inc. Solidly-mounted transversely-excited film bulk acoustic resonator with diamond layers in Bragg reflector stack
US11323091B2 (en) 2018-06-15 2022-05-03 Resonant Inc. Transversely-excited film bulk acoustic resonator with diaphragm support pedestals
US11916539B2 (en) 2020-02-28 2024-02-27 Murata Manufacturing Co., Ltd. Split-ladder band N77 filter using transversely-excited film bulk acoustic resonators
US10917072B2 (en) 2019-06-24 2021-02-09 Resonant Inc. Split ladder acoustic wave filters
US11876498B2 (en) * 2018-06-15 2024-01-16 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with multiple diaphragm thicknesses and fabrication method
US12218650B2 (en) 2018-06-15 2025-02-04 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator
US10826462B2 (en) 2018-06-15 2020-11-03 Resonant Inc. Transversely-excited film bulk acoustic resonators with molybdenum conductors
US12095446B2 (en) 2018-06-15 2024-09-17 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with optimized electrode thickness, mark, and pitch
US12191837B2 (en) 2018-06-15 2025-01-07 Murata Manufacturing Co., Ltd. Solidly-mounted transversely-excited film bulk acoustic device
US12149227B2 (en) 2018-06-15 2024-11-19 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator package
US11967945B2 (en) 2018-06-15 2024-04-23 Murata Manufacturing Co., Ltd. Transversly-excited film bulk acoustic resonators and filters
US12095441B2 (en) 2018-06-15 2024-09-17 Murata Manufacturing Co., Ltd. Transversely excited film bulk acoustic resonator with recessed interdigital transducer fingers
US12081187B2 (en) 2018-06-15 2024-09-03 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator
US12021496B2 (en) 2020-08-31 2024-06-25 Murata Manufacturing Co., Ltd. Resonators with different membrane thicknesses on the same die
US12009798B2 (en) 2018-06-15 2024-06-11 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonators with electrodes having irregular hexagon cross-sectional shapes
US12170516B2 (en) 2018-06-15 2024-12-17 Murata Manufacturing Co., Ltd. Filters using transversly-excited film bulk acoustic resonators with frequency-setting dielectric layers
US12191838B2 (en) 2018-06-15 2025-01-07 Murata Manufacturing Co., Ltd. Solidly-mounted transversely-excited film bulk acoustic device and method
US12040781B2 (en) 2018-06-15 2024-07-16 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator package
US11909381B2 (en) 2018-06-15 2024-02-20 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonators with two-layer electrodes having a narrower top layer
US10985728B2 (en) 2018-06-15 2021-04-20 Resonant Inc. Transversely-excited film bulk acoustic resonator and filter with a uniform-thickness dielectric overlayer
US20220393666A1 (en) * 2018-06-15 2022-12-08 Resonant Inc. Filter device
US12113512B2 (en) 2021-03-29 2024-10-08 Murata Manufacturing Co., Ltd. Layout of XBARs with multiple sub-resonators in parallel
US12119808B2 (en) 2018-06-15 2024-10-15 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator package
US10992284B2 (en) 2018-06-15 2021-04-27 Resonant Inc. Filter using transversely-excited film bulk acoustic resonators with multiple frequency setting layers
US11949402B2 (en) 2020-08-31 2024-04-02 Murata Manufacturing Co., Ltd. Resonators with different membrane thicknesses on the same die
US11888463B2 (en) 2018-06-15 2024-01-30 Murata Manufacturing Co., Ltd. Multi-port filter using transversely-excited film bulk acoustic resonators
CN118353412A (en) 2019-04-05 2024-07-16 株式会社村田制作所 Transverse excited film bulk acoustic resonator package and method
JP7433873B2 (en) * 2019-12-06 2024-02-20 太陽誘電株式会社 Acoustic wave resonators, filters, and multiplexers
JP7561343B2 (en) * 2019-12-09 2024-10-04 三安ジャパンテクノロジー株式会社 Surface acoustic wave filters, duplexers and modules
CN111262548B (en) * 2019-12-31 2021-06-22 诺思(天津)微系统有限责任公司 Bulk acoustic wave resonator group, filter, electronic device, and electromechanical coupling coefficient adjustment method
US11811391B2 (en) 2020-05-04 2023-11-07 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with etched conductor patterns
WO2022014494A1 (en) * 2020-07-15 2022-01-20 株式会社村田製作所 Elastic wave device
JP6964359B1 (en) * 2020-08-03 2021-11-10 三安ジャパンテクノロジー株式会社 Surface acoustic wave device
US11405017B2 (en) 2020-10-05 2022-08-02 Resonant Inc. Acoustic matrix filters and radios using acoustic matrix filters
WO2022085624A1 (en) * 2020-10-19 2022-04-28 株式会社村田製作所 Elastic wave device
US20230412142A1 (en) * 2020-11-16 2023-12-21 Qorvo Us, Inc. Piezoelectric layer arrangements in acoustic wave devices and related methods
US12166468B2 (en) 2021-01-15 2024-12-10 Murata Manufacturing Co., Ltd. Decoupled transversely-excited film bulk acoustic resonators for high power filters
US11874189B2 (en) 2021-07-02 2024-01-16 Applied Materials, Inc. MEMS resonator sensor substrate for plasma, temperature, stress, or deposition sensing
WO2024190719A1 (en) * 2023-03-16 2024-09-19 京セラ株式会社 Acoustic wave device and communication device

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010004741A1 (en) 2008-07-11 2010-01-14 パナソニック株式会社 Plate wave element and electronic equipment using same
WO2013047433A1 (en) 2011-09-30 2013-04-04 株式会社村田製作所 Elastic wave device
JP2016072808A (en) 2014-09-30 2016-05-09 株式会社村田製作所 Duplexer and method of manufacturing the same
JP2016519897A (en) 2013-04-08 2016-07-07 ソイテック Improved heat-compensated surface acoustic wave device and manufacturing method
JP2017034363A (en) 2015-07-29 2017-02-09 太陽誘電株式会社 Elastic wave device and module
JP2017224890A (en) 2016-06-13 2017-12-21 株式会社村田製作所 Acoustic wave device
JP2018007239A (en) 2016-06-24 2018-01-11 株式会社村田製作所 Acoustic wave device
JP2018506930A (en) 2014-12-17 2018-03-08 コルボ ユーエス インコーポレイテッド Plate wave device having wave confinement structure and fabrication method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3088189B2 (en) * 1992-02-25 2000-09-18 三菱電機株式会社 Surface acoustic wave device

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010004741A1 (en) 2008-07-11 2010-01-14 パナソニック株式会社 Plate wave element and electronic equipment using same
WO2013047433A1 (en) 2011-09-30 2013-04-04 株式会社村田製作所 Elastic wave device
JP2016519897A (en) 2013-04-08 2016-07-07 ソイテック Improved heat-compensated surface acoustic wave device and manufacturing method
JP2016072808A (en) 2014-09-30 2016-05-09 株式会社村田製作所 Duplexer and method of manufacturing the same
JP2018506930A (en) 2014-12-17 2018-03-08 コルボ ユーエス インコーポレイテッド Plate wave device having wave confinement structure and fabrication method
JP2017034363A (en) 2015-07-29 2017-02-09 太陽誘電株式会社 Elastic wave device and module
JP2017224890A (en) 2016-06-13 2017-12-21 株式会社村田製作所 Acoustic wave device
JP2018007239A (en) 2016-06-24 2018-01-11 株式会社村田製作所 Acoustic wave device

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