JP7148610B2 - 基板処理装置 - Google Patents
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
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- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
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- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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Description
本開示の諸実施形態は、概して、基板を処理するための誘導結合プラズマソースに関する。
マイクロエレクトロニクス製造では、誘導結合プラズマ(ICP)処理チャンバが一般的である。そのような反応器では、ガス内のガス原子から電子を分離する傾向があるガス内の電界を使用することにより、ガス内にプラズマが形成され、イオン、自由電子、中性分子、ラジカルのプラズマを生成する。プラズマを形成するICP法では、電界は、処理チャンバの外側に配置された1つ以上のコイルを流れるAC電流(例えば、RF)によって生成され、それにより、隣接するチャンバガス容積内のガスに電流を誘導する。電力伝達効率(すなわち、ガスへ効果的に伝達されてプラズマを形成した、コイルの通過電力量)は、ICP処理の重要な要素である。ICPソースは通常、容量性と誘導性の両方でチャンバ内のガスに結合しているが、容量結合はあまり効率的ではなく、このような理由から、プラズマが開始又は「点火」された後は望ましくない。容量結合により、プラズマの点火と低電力設定での動作が可能になり、この低電力設定では、低密度プラズマ(Eモードプラズマ)が生成される。一度プラズマが確立すると、誘導結合によりプラズマは高密度へ移行し(Hモードプラズマ)、容量結合の影響が最小限に抑えられる。
Claims (19)
- 基板を処理するための装置であって、
遠隔場電力発生器に結合するように構成された1つ以上の導体であって、短絡部によって外部コイルに直列に結合された内部コイルを含み、外部コイルが第1の平面に配置され、コイル部分の第1のセットを含む内側コイルの第1のセグメントは、外側コイルと同一平面上にあり、外側コイルに結合されている導体と、
接地され、第1の平面と平行に配置されるように構成されたシールド部材であって、シールド部材の中央領域とシールド部材の外径との間に配置された複数の部材を含むシールド部材と、
シールド部材の上の1つ以上の導体の各々の内部コイルを支持する複数の内側支柱と、
シールド部材の上の1つ以上の導体の各々の外部コイルを支持する複数の外側支柱を含み、
内側コイルは、第1のセグメントに直列に結合された第2のセグメントを有し、第2のセグメントは、コイル部分の第2のセットを含み、第2のセグメントは垂直螺旋配置で構成され、第2のセグメントの垂直螺旋配置は内側コイルの内径で終端し、
コイル部分の第2のセットの各々は、外側コイルから離れる方向に距離が増加するにつれて減少する巻き直径を有する、装置。 - 複数の部材は、中央領域から放射状に延びる複数のスポークと、スポーク間に配置された複数のスロットとを備える、請求項1に記載の装置。
- 1つ以上の導体が4つの導体を含む、請求項1に記載の装置。
- シールド部材は、シールド部材を形成するように結合された4つのセグメントを含み、
4つのセグメントは各々ギャップによって互いに分離されている、請求項1に記載の装置。 - コイル部分の第1のセットが複数の巻き数を含む、請求項1に記載の装置。
- 基板を処理するための装置であって、
遠隔場電力発生器に結合するように構成された1つ以上の導体であって、短絡部によって外部コイルに直列に結合された内部コイルを含み、内部コイルが第2のセグメントに直列に結合された第1のセグメントを含み、外側コイルは第1の平面に配置され、コイル部分の第1のセットを含む内側コイルの第1のセグメントは複数の巻き数を含み、コイル部分の第1のセットは外側コイルと同一平面上にあり、第2のセグメントは、第1の平面に対して第1のセグメントからある角度で延在し、第1のセグメントによって外部コイルから分離され、第2のセグメントは内部コイルの内径で終端する導体と、
接地され、第1の平面と平行に配置されるように構成されたシールド部材であって、シールド部材の中央領域とシールド部材の外径との間に配置された複数の部材を含むシールド部材と、
シールド部材の上の1つ以上の導体の各々の内側コイルを支持する複数の内側支柱と、
シールド部材の上の外側コイルの1つ以上の導体の少なくとも1つを支持する複数の外部支柱であって、外側支柱の1つの少なくとも1つは1つ以上の導体の1つの少なくとも一部を支持しない外側支柱と、
1つ以上の独立ガイドであって、隣接する他のすべての外部支柱の間に配置され、各々が第1の平面において外部コイルを支持する独立ガイドを備える装置。 - 複数の内側支柱は4個の内側支柱を含み、
複数の外部支柱は8個の外部支柱を含む、請求項6に記載の装置。 - 複数の外部支柱の7個は、外部コイルの1つ以上の導体のうちの2つ以上を支持し、
8番目の外側支柱は1つ以上の導体の少なくとも1つの少なくとも一部を支持しない、請求項7に記載の装置。 - 複数の外部支柱の各々は、1つ以上の導体の3個又は4個を支持する、請求項7に記載の装置。
- 基板を処理するための装置であって、
遠隔場電力発生器に結合するように構成された1つ以上の導体であって、1つ以上の導体の各々は短絡部によって外部コイルに直列に結合された内部コイルを含み、内部コイルは第2のセグメントに直列に結合された第1のセグメントを含み、第1のセグメントは第1の平面において第1の同心平面配置で構成され、第2のセグメントは、第1の平面の下で第1の平面から非平行に延在し、第1のセグメントによって外側コイルから分離され、第2のセグメントは内側コイルの直径の内側で終端し、外側コイルは、内側コイルの第1のセグメントと同一平面上にある第1の平面に配置され、外側コイルは短絡部によって第1のセグメントに直列に結合される導体と、
1つ以上の導体の各々の内部コイルを支持する複数の内側支柱と、
1つ以上の導体の各々の外部コイルを支持する複数の外部支柱を含む装置。 - 1つ以上の独立ガイドであって、隣接する全ての外側支柱の間に配置され、各々が円周方向経路に沿って位置し、各々が第1の平面で外側のコイルを支持する、請求項10に記載の装置。
- 各々の独立ガイドが上側部材と下側部材を含み、各々の上側部材と各々の下側部材がねじ締結具によって結合される、請求項11に記載の装置。
- 各々の独立ガイドが上側部材と下側部材を含み、各々の上側部材が内側に延びる1つ以上の上部凹部を含み、各々の凹部はその中に個々の外部コイルを受け入れる、請求項11に記載の装置。
- 各々の下側部材が1つ以上の下部凹部を含む、請求項13に記載の装置。
- 第2のセグメントは垂直螺旋配置で構成される、請求項10に記載の装置。
- 第1のセグメントから最も遠い端部の第2のセグメントの直径は、第1のセグメントに最も近い端部の第2のセグメントの直径よりも小さい、請求項6に記載の装置。
- コイル部分の第2のセットの各々のコイル部分は、異なる垂直位置に配置される、請求項1に記載の装置。
- 第1のセグメントが、コイル部分の第1のセットに2つ以上のコイル部分を含む、請求項1に記載の装置。
- 第1のセグメントはコイル部分の第1のセットに2つ以上のコイル部分を含む、請求項6に記載の装置。
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US11521828B2 (en) * | 2017-10-09 | 2022-12-06 | Applied Materials, Inc. | Inductively coupled plasma source |
CN112368805B (zh) * | 2018-12-18 | 2024-10-08 | 玛特森技术公司 | 使用含硫工艺气体的含碳硬掩模去除工艺 |
JP6976279B2 (ja) * | 2019-03-25 | 2021-12-08 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
US20210066054A1 (en) * | 2019-08-28 | 2021-03-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor processing apparatus for generating plasma |
US20220208527A1 (en) * | 2020-12-28 | 2022-06-30 | Mattson Technology, Inc. | Cooled Shield for ICP Source |
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WO2019074563A1 (en) | 2019-04-18 |
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TW201933419A (zh) | 2019-08-16 |
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