JP7059714B2 - Power converter and manufacturing method of power converter - Google Patents

Description

The present invention relates to a power conversion device using a power semiconductor element and a method for manufacturing the same.

Hybrid cars and electric vehicles require power conversion devices such as switching power supplies, inverters, and converters to drive their motors. Further, in such a power conversion device, an element called a power semiconductor element is used. Here, the power semiconductor element processes a large current and generates heat to become high temperature. Therefore, the power conversion device requires a mechanism for dissipating heat from the power semiconductor element while ensuring insulation from the power semiconductor element. Further, in order to secure insulation in such a heat dissipation mechanism, double insulation is required from the viewpoint of safety. As an example thereof, there is a power conversion device (hereinafter, referred to as a conventional power conversion device) provided with an insulated heat dissipation substrate as described in Patent Document 1. This type of insulated heat dissipation substrate includes a metal plate that dissipates heat from the power semiconductor element to the outside. Further, so-called double insulation is ensured by sandwiching two heat transfer layers having insulating properties between the power semiconductor element and the metal plate.

Japanese Unexamined Patent Publication No. 2009-4731

The insulated heat dissipation substrate of the conventional power conversion device has been manufactured by pressing two heat transfer layers having insulating properties and a metal plate. At this time, a gap is formed at the boundary due to the slight unevenness on the surface of the metal plate or the heat transfer layer. Air having a low thermal conductivity enters this gap, and thermal resistance is generated between the metal plate and the heat transfer layer or the two heat transfer layers. As a result, heat conduction from the power semiconductor element to the metal plate is hindered, and as a result, there is a problem that the ability of the power semiconductor element to dissipate heat deteriorates. Further, since the insulated heat-dissipating substrate of the conventional power conversion device is manufactured by press working, there is also a problem that a die for press working is required.

The present invention has been made to solve the above-mentioned problems, to improve the ability to dissipate heat of a power semiconductor element in a power conversion device, and to eliminate the need for a die for press processing. It is an object of the present invention to provide a method for manufacturing a certain power conversion device.

The power conversion device according to the present invention includes a power semiconductor element, an insulating substrate having a power semiconductor element mounted on one main surface, a heat dissipation member facing the other main surface of the insulating substrate, and heat dissipation on the other main surface of the insulating substrate. It is provided with a resin spacer which is located between the members and has an insulating property, and a resin member which fills the remaining portion between the other main surface of the insulating substrate and the heat radiating member and has an insulating property. Further, the insulating substrate is provided with a through hole connecting one main surface and the other main surface to allow the resin member to enter.

Further, the method for manufacturing a power conversion device according to the present invention includes a first mounting step of placing a resin spacer on a heat radiating member and a second mounting step of placing an insulating substrate to which a power semiconductor element is attached on the resin spacer. It includes a mounting step and a filling step of filling a liquid and insulating resin member between the heat radiating member and the insulating substrate.

In the power conversion device configured as described above, the ability to dissipate heat from the power semiconductor element is improved, and the manufacturing method eliminates the need for a die for press working.

It is a figure which shows the power conversion apparatus which concerns on Embodiment 1. FIG. It is a perspective view which shows the power semiconductor element and the insulating substrate which concerns on Embodiment 1. FIG. It is a figure which looked at the power semiconductor element and the insulating substrate which concerns on Embodiment 1 from the side surface side. It is a figure which shows an example of a heat dissipation member. It is a perspective view which shows the power semiconductor element, the insulating substrate and the resin spacer which concerns on Embodiment 1. FIG. It is a figure which shows the manufacturing process of a power conversion apparatus. It is a figure which shows the manufacturing process of a power conversion apparatus. It is a figure which shows the manufacturing process of a power conversion apparatus. It is a figure which shows the manufacturing process of a power conversion apparatus. It is a figure which shows the power conversion apparatus which concerns on Embodiment 2. It is a figure which shows the power conversion apparatus which concerns on Embodiment 3. It is a perspective view which shows the power semiconductor element and the insulating substrate which concerns on Embodiment 3. FIG. It is a figure which shows the power semiconductor element, the insulating substrate and the resin spacer which concerns on other embodiment. It is a figure which shows the power semiconductor element, the insulating substrate and the resin spacer which concerns on other embodiment. It is a figure which shows the power semiconductor element, the insulating substrate and the resin spacer which concerns on other embodiment. It is a figure which shows the power semiconductor element, the insulating substrate and the resin spacer which concerns on other embodiment. It is a figure which shows the power semiconductor element, the insulating substrate and the resin spacer which concerns on other embodiment.

Hereinafter, the power conversion device according to the embodiment will be described with reference to the attached drawings. The same reference numerals are given to the same configurations in each embodiment.

Embodiment 1.
FIG. 1 is a diagram showing a power conversion device according to the first embodiment. In FIG. 1, the power conversion device 100 includes a power semiconductor element 10, an insulating substrate 20, a heat radiating member 40, a resin spacer 50, a resin member 60, and a circuit board 150. The power conversion device 100 is a switching power supply, an inverter, a converter, or the like for driving a motor of a hybrid car or an electric vehicle. The power conversion device 100 includes a power semiconductor element 10, an insulating substrate 20 to which the power semiconductor element 10 is attached to one main surface S1 (upper surface in FIG. 1), and the other main surface S2 (lower surface in FIG. 1) of the insulating substrate 20. The residual between the heat-dissipating member 40 facing each other, the resin spacer 50 having an insulating property located between the other main surface S2 of the insulating substrate 20 and the heat-dissipating member 40, and the other main surface S2 of the insulating substrate 20 and the heat-dissipating member 40. A resin member 60 having an insulating property is provided by filling the portion of the above. Further, the power conversion device 100 also includes a circuit board 150 connected to the power semiconductor element 10.

The power semiconductor element 10 is a semiconductor element for controlling and supplying a power source / electric power of a converter / inverter, a regulator, or the like.

A plurality of power semiconductor elements 10 are attached to the main surface S1 of the insulating substrate 20. Further, the insulating substrate 20 constitutes a part of a path for transferring heat from the power semiconductor element 10 to the heat radiating member 40 described later.

The heat radiating member 40 plays a role of releasing the heat from the power semiconductor element 10 to the air around the heat radiating member 40. The heat radiating member 40 is arranged so as to face the other main surface S2 of the insulating substrate 20. Further, the heat radiating member 40 is made of aluminum, copper or the like, and has a flat plate shape.

The resin spacer 50 is located between the insulating substrate 20 and the heat radiating member 40, and supports the insulating substrate 20 from the heat radiating member 40 side. Specifically, the resin spacer 50 is made of a material having insulating properties and heat resistance, for example, so-called engineering plastics such as PPS and PTFE, and has a rectangular parallelepiped shape.

The resin member 60 is made of an insulating material such as an epoxy resin or a silicon resin. The resin member 60 fills the remaining portion between the insulating substrate 20 and the heat radiating member 40. Therefore, the space between the insulating substrate 20 and the heat radiating member 40 is filled with the resin spacer 50 and the resin member 60. Further, the resin member 60 also covers one main surface S1 of the insulating substrate 20, and is also present among a plurality of power semiconductor elements 10 attached to the insulating substrate 20.

The circuit board 150 is a so-called printed circuit board made of glass epoxy, glass composite, paper phenol, or the like. Further, the circuit board 150 has a circuit pattern constituting a power conversion circuit such as a switching power supply, an inverter, and a converter. Then, as shown in FIG. 1, the power semiconductor element 10 is connected to the circuit board 150. Specifically, the lead terminal extending from the power semiconductor element 10 is inserted into a through hole on the printed circuit provided on the circuit board 150. Then, the power semiconductor element 10 is connected to the circuit board 150 by soldering the tip of the lead terminal that has passed through the through hole.

FIG. 2 is a perspective view showing a power semiconductor element and an insulating substrate according to the first embodiment. Further, FIG. 3 is a view of the power semiconductor element and the insulating substrate according to the first embodiment as viewed from the side surface side. The power semiconductor element 10 and the insulating substrate 20 will be described more specifically with reference to FIGS. 2 and 3.

As described above, the power semiconductor element 10 is located on one main surface S1 of the insulating substrate 20. Further, a metal plate 12 for heat dissipation is provided on the surface of the power semiconductor element 10 on the side opposite to the direction in which the lead wire extends.

The insulating substrate 20 has a metal substrate 22, an insulating layer 24, and a heat transfer metal pattern 26. The metal substrate 22 is a flat plate made of a metal material such as aluminum or copper, and constitutes a metal layer. Further, the metal substrate 22 is located on the other main surface S2 side of the insulating substrate 20 and is in contact with the resin member 60. The insulating layer 24 is a layer formed on the upper surface of the metal substrate 22. The material of the insulating layer 24 is a material having an insulating property such as glass epoxy. The heat transfer metal pattern 26 is a layer made of a metal such as copper formed on the upper surface of the insulating layer 24, and as shown in FIG. 2, has a rectangular shape when viewed from the upper surface side of the insulating substrate 20. ing. Further, the power semiconductor element 10 is adhered to the heat transfer metal pattern 26 by the solder 28. Therefore, the heat transfer metal pattern 26 is formed on the upper surface of the insulating layer 24 as many as the number of power semiconductor elements 10 attached to the insulating substrate 20. The solder 28 is shown only in a part of FIGS. 2 and 3 for the sake of readability of the drawings.

FIG. 4 is a diagram showing an example of a heat radiating member. It was stated that the shape of the heat radiating member 40 is a flat plate in the first embodiment. However, as shown in FIG. 4, the shape of the heat radiating member 40 is not limited to the flat plate, and may be, for example, a shape in which a plurality of fins are arranged on the flat plate.

FIG. 5 is a perspective view showing a power semiconductor element, an insulating substrate, and a resin spacer according to the first embodiment. As shown in FIG. 5, the resin spacers 50 have a rectangular parallelepiped shape and are regularly arranged at intervals in the horizontal direction.

In the power conversion device 100 configured as described above, the insulating layer 24 of the insulating substrate 20 functions as the first insulating layer, and the resin spacer 50 and the resin member 60 function as the second insulating layer. Double insulation is secured.

Further, in the power conversion device 100, when the power semiconductor element 10 generates heat, the heat is transferred to the heat transfer metal pattern 26 of the insulating substrate 20. Then, the heat transferred to the heat transfer metal pattern 26 propagates in the order of the insulating layer 24 and the metal substrate 22. After that, the heat is transferred to the heat radiating member 40 via the resin spacer 50 and the resin member 60, and finally is released to the air around the heat radiating member 40. The metal substrate 22 serves as a heat spreader that widely transfers heat from the insulating layer 24 to members around the metal substrate 22, such as the resin spacer 50 and the resin member 60. That is, the metal substrate 22 can be said to be a layer for heat diffusion.

6 to 9 are views showing a manufacturing process of the power conversion device. The manufacturing method of the power conversion device 100 according to the present embodiment will be described with reference to FIGS. 6 to 9.

In the manufacture of the power conversion device 100, as shown in FIG. 6, the heat radiation member 40 is placed in the box-shaped jig 200 in advance, and the heat radiation member 40 is fixed. The box-shaped jig 200 is located in the vacuum chamber 300 as shown in FIG.

Next, as a first mounting step, as shown in FIG. 7, a resin spacer 50 is placed on the upper surface of the heat radiating member 40 fixed by the jig 200. At this time, the resin spacer 50 may be temporarily fixed with an adhesive or the like. In the case of temporary fixing, the adhesive of the resin spacer 50 is preferably made of the same material as the resin spacer 50. This is because if the same type of material is used, the coefficient of thermal expansion is close to each other, so that the resin spacer 50 can be suppressed from peeling from the heat radiating member 40 due to aged deterioration.

After placing the resin spacer 50, as shown in FIG. 8, a positioning member 250 for determining the position of the insulating substrate 20 is placed on the upper surface of the heat radiating member 40. Then, as the second mounting step, the insulating substrate 20 is placed on the resin spacer 50. At this time, the power semiconductor element 10 is soldered to the insulating substrate 20 in advance. Further, the circuit board 150 and the power semiconductor element 10 are also soldered. That is, the power semiconductor element 10, the insulating substrate 20, and the circuit board 150 are placed on the resin spacer 50 in an assembled state.

After that, the positioning member 250 is removed, and as shown in FIG. 9, the inside of the box-shaped jig 200 on which the power semiconductor element 10 and the like are placed is filled with the liquid resin member 60 (filling step). At this time, the liquid resin member 60 is filled not only between the insulating substrate 20 and the heat radiating member 40 but also so as to cover the upper surface of the insulating substrate 20. The resin member 60 may be a mixture of two liquids and cured, or may be heat-cured. However, in the case of the resin member 60 that is cured by heat, it is preferable that the resin member 60 is cured at 100 ° C. or lower in consideration of the heat resistance of the power semiconductor element 10.

After that, a vacuum is drawn to remove the air remaining in the resin member 60. Then, after the liquid resin member 60 is cured to become a solid resin member 60, the jig 200 is removed to complete the power conversion device 100. In the present embodiment, the box-shaped jig 200 is in the vacuum chamber 300 even before the resin spacer 50 is placed on the heat radiating member 40. However, the manufacturing method of the power conversion device 100 is not limited to this, and the box-shaped jig 200 may be transferred to the vacuum chamber 300 after the resin member 60 is filled.

By the way, although the insulating substrate 20 has a structure in which three layers are laminated, these are not laminated and press-processed in the manufacturing process of the power conversion device 100. Specifically, the insulating substrate 20 is generally marketed in a state where a metal substrate 20, an insulating layer 24, and a plain metal layer to be a heat transfer metal pattern 26 are laminated. Here, in the manufacture of the power conversion device 100, the process required for the insulating substrate 20 is the formation of the heat transfer metal pattern 26. To form the heat transfer metal pattern 26, the plain layer of the insulating substrate 20 is masked corresponding to the heat transfer metal pattern 26. Then, by etching the plain layer and then removing the masking, the heat transfer metal pattern 26 is formed on the insulating substrate 20. As described above, in the manufacturing process of the power conversion device 100, only the heat transfer metal pattern 26 is formed on the insulating substrate 20 by etching, and the layers constituting the insulating substrate 20 are laminated and press-processed. There is no.

The power conversion device 100 has a higher ability to dissipate heat from a power semiconductor element as compared with a conventional power conversion device. Specifically, the conventional power conversion device has been manufactured by pressing a solid metal plate and two heat transfer layers having insulating properties. At this time, a gap is formed at the boundary due to the slight unevenness on the surface of the metal plate or the heat transfer layer. Air having a low thermal conductivity enters this gap, and thermal resistance is generated between the metal plate and the heat transfer layer or the two heat transfer layers. As a result, heat conduction from the power semiconductor element to the metal plate is hindered, and as a result, the ability of the power semiconductor element to dissipate heat deteriorates. On the other hand, in the power conversion device 100 of the present embodiment, the resin member 60 exists between the insulating substrate 20 and the heat radiating member 40. Since the resin member 60 was a liquid in the manufacturing process of the power conversion device 100, it penetrates into fine irregularities on the surface of the insulating substrate 20 and the heat radiating member 40. Therefore, it is difficult for a gap to occur at the boundary between the insulating substrate 20 and the resin member 60 and the boundary between the resin member 60 and the heat radiating member 40. As a result, it is possible to suppress the inflow of air into the gap at the boundary between the insulating substrate 20 and the resin member 60 and the gap between the boundary between the resin member 60 and the heat radiating member 40. As a result, in the power conversion device 100, the generation of thermal resistance due to the unevenness of the solid surface as in the conventional power conversion device is suppressed, and the heat from the power semiconductor element 10 can be smoothly transferred to the heat dissipation member 40. Therefore, the power conversion device 100 has a higher ability to dissipate heat from the power semiconductor element as compared with the conventional power conversion device.

Further, the power conversion device 100 eliminates the need for a die for press working. Specifically, in a conventional power conversion device, a metal plate that dissipates heat from a power semiconductor element and two heat transfer layers having an insulating property are press-processed. Therefore, a die for press working was required. On the other hand, in the production of the power conversion device 100, as described above, the resin spacer 50 is placed on the heat radiating member 40, and the insulating substrate 20 is placed on the resin spacer 50. Then, by filling the liquid resin member 60, the resin member 60 is formed between the insulating substrate 20 and the heat radiating member 40, and the power conversion device 100 is completed. That is, press working is not used in the production of the power conversion device 100. Therefore, the power converter 100 does not require a mold.

Further, the power conversion device 100 is manufactured in the vacuum chamber 300. Then, in the manufacture of the power conversion device 100, after filling the liquid resin member 60, a vacuum is drawn to remove the air remaining in the resin member 60. Therefore, according to this manufacturing method, since it is difficult for air to remain in the cured resin member 60, it is possible to suppress an increase in thermal resistance due to the residual air. Therefore, according to the manufacturing method of the power conversion device 100, the ability to dissipate the heat of the power semiconductor element 10 can be increased as compared with the case where the vacuum is not drawn in the manufacturing process.

In addition to this, the suppression of residual air in the resin member 60 also contributes to the improvement of the insulating property in the power conversion device 100. For example, it is assumed that air remains in the resin member 60. In this case, when the power conversion device 100 operates at a high voltage, the electric field concentrates on the air remaining in the resin member 60, which may lead to corona discharge. However, in the power conversion device 100, as described above, the residual air in the resin member 60 is suppressed. Therefore, in the power conversion device 100, corona discharge is unlikely to occur and the insulating property is good.

By the way, in the power conversion device 100, the resin member 60 covers not only between the insulating substrate 20 and the heat radiating member 40 but also one main surface S1 of the insulating substrate 20, and a plurality of power semiconductors attached to the insulating substrate 20. It also exists between the elements 10. Here, since the resin member 60 covers one main surface S1 of the insulating substrate 20, the strength of the insulating substrate 20 can be improved as compared with the case where the one main surface S1 is not covered. Further, the resin member 60 is made of a material having higher insulating properties than air, such as epoxy resin and silicon resin. Therefore, in the power conversion device 100 in which the resin member 60 is present between the power semiconductor elements 10, the insulation between the power semiconductor elements 10 is higher than that in the case where there is air between the power semiconductor elements 10. Further, by increasing the insulating property between the power semiconductor elements 10, the distance between the power semiconductor elements 10 can be shortened. This contributes to the miniaturization of the power conversion device.

Embodiment 2.
FIG. 10 is a diagram showing a power conversion device 100A according to the second embodiment. The main differences between the power conversion device 100A according to the second embodiment and the power conversion device 100 according to the first embodiment are that the ceramic substrate 32 is used as the insulating layer of the insulating substrate and that the heat radiating member to the insulating substrate is used. It is a point having a protrusion 70 extending toward. Hereinafter, a more specific description will be given.

The insulating substrate 20A of the power conversion device 100A is a so-called direct bonded copper substrate, and includes a ceramic substrate 32, a heat diffusion layer 34, and a heat transfer metal pattern 26. The insulating substrate 20A is also commercially available in a state in which a metal plane layer serving as a heat diffusion layer 34, a ceramic substrate 32, and a metal plane layer serving as a heat transfer metal pattern 26 are laminated. In the manufacturing process of the power conversion device 100A, the processing performed on the insulating substrate 20A is only the processing of the metal layer by etching as in the first embodiment, and the layers constituting the insulating substrate 20A are laminated and pressed. There is no processing.

The ceramic substrate 32 is based on a ceramic compound and has an insulating property. Therefore, the ceramic substrate 32 also functions as an insulating layer in the insulating substrate 20A.

The heat diffusion layer 34 is a metal layer provided on the lower surface side of the ceramic substrate 32. The material of the heat diffusion layer 34 is aluminum, copper, or the like. The heat diffusion layer 34 functions as a heat spreader that widely transfers the heat transmitted from the power semiconductor element 10 transmitted through the ceramic substrate 32 to the surroundings. The area of the heat diffusion layer 34 is smaller than the area of the ceramic substrate 32, and the outer edge of the heat diffusion layer 34 does not reach the outer edge of the ceramic substrate 32.

The heat transfer metal pattern 26 is different from the first embodiment in that it is provided on the upper surface of the ceramic substrate 32. Since other points are the same as those of the first embodiment, the description thereof will be omitted here.

Further, the heat radiating member 40A of the power conversion device 100A is provided with a protrusion 70 extending from the heat radiating member 40A toward the insulating substrate 20A. The protrusion 70 is integrated with the heat radiating member 40A. The side surface of the protrusion 70 is in contact with the side surface of the insulating substrate 20A, specifically, the side surface of the ceramic substrate 32 that functions as an insulating layer in the insulating substrate 20A.

The power conversion device 100A configured as described above has better heat resistance than the power conversion device 100 according to the first embodiment. Specifically, the insulating layer 24 of the power conversion device 100 according to the first embodiment is made of an epoxy resin or the like, and its heat resistant temperature is 110 ° C to 250 ° C. On the other hand, since the base material of the ceramic substrate 32 that functions as the insulating layer in the second embodiment is a ceramic compound, the heat resistant temperature is about 800 ° C. Therefore, the power conversion device 100A has better heat resistance than the power conversion device 100 according to the first embodiment. Further, since the insulating substrate 20A uses the ceramic substrate 32, the insulating substrate 20 generally has higher thermal expansion, thermal impact resistance, thermal conductivity, high temperature strength, etc. than the insulating substrate 20 composed of an insulating layer of a metal substrate and an epoxy resin. Shows excellent properties.

Further, in the power conversion device 100A, a protrusion 70 extending from the heat radiating member 40A toward the insulating substrate 20A is provided, and the side surface thereof is in contact with the side surface of the ceramic substrate 32. The protrusion 70 can be used as a positioning member for the insulating substrate 20A when the insulating substrate 20A is placed on the resin spacer 50 in the manufacturing process of the power conversion device 100A. Therefore, in the power conversion device 100A, it is not necessary to separately prepare the positioning member of the insulating substrate 20A, for example, the positioning member 250 according to the first embodiment in the manufacturing process, and the manufacturing process can be simplified. Since the protrusion 70 is in contact with the ceramic substrate 32, electricity does not flow from the power semiconductor element 10 through the protrusion 70.

Other configurations in the power conversion device 100A are the same as those in the power conversion device 100. Therefore, the description other than the description regarding the insulating substrate 20A and the protrusion 70 is as described in the power conversion device 100.

Embodiment 3.
FIG. 11 is a diagram showing a power conversion device according to the third embodiment. The main difference between the power conversion device 100B according to the third embodiment and the power conversion device 100 according to the first embodiment is that a wall 80 is provided around the insulating substrate and a through hole 90 is provided in the insulating substrate. It is a point provided.

The wall 80 is provided so as to surround the periphery of the side surface side of the insulating substrate 20. The wall 80 is integrated with the heat dissipation member 40. As a result, in the power conversion device 100B, the wall 80 can be used as a member for blocking the filled liquid resin member 60 in the manufacturing process. Therefore, in the power conversion device 100B, it is not necessary to separately prepare a member for blocking the liquid resin member 60, for example, a member such as the jig 200 in the first embodiment, and the manufacturing process is simplified. Can be converted. The wall 80 may be separate from the heat radiating member 40.

The insulating substrate 20B of the power conversion device 100B is provided with a through hole 90 for connecting one main surface S1 and the other main surface S2 of the insulating substrate 20B. As a result, in the power conversion device 100B, the air that enters between the insulating substrate 20B and the heat radiating member 40 when the liquid resin member 60 is filled is easily released to the outside. Therefore, in the power conversion device 100B, as compared with the power conversion device 100, the residual air between the insulating substrate 20 and the heat radiating member 40 can be further suppressed, and the insulating property and the heat radiating property are good. The resin member 60 enters the through hole 90 in the process of releasing air from the through hole 90.

FIG. 12 is a perspective view showing the power semiconductor element and the insulating substrate according to the third embodiment. The through hole 90 is located on the insulating substrate 20B between the plurality of attached power semiconductor elements 10. The shape of the through hole 90 is a long hole and a round hole. However, the shape of the through hole 90 is not limited to this, and may be another shape such as a square hole.

Other configurations in the power conversion device 100B are the same as those in the power conversion device 100. Therefore, the description other than the description regarding the wall 80 and the through hole 90 is the same as the description in the power conversion device 100.

Other embodiments.
13 to 17 are views showing power semiconductor devices, insulating substrates, and resin spacers according to other embodiments. The power conversion device according to the present invention is not limited to the power conversion device according to the embodiment, and can be changed within the scope of the gist thereof. For example, as shown in FIG. 13, the resin spacer 50A on a cube may be used, or as shown in FIG. 14, a columnar resin spacer 50B may be used.

Further, as in the resin spacer 50C shown in FIG. 15, the center of the rectangular parallelepiped may be hollowed out in a columnar shape. In this case, the resin member 60 is filled in the cylindrically hollowed out portion of the resin spacer 50. Further, in FIG. 15, of the two through holes 90, one is for filling the resin member 60 and the other is for bleeding air. At this time, the ratio of the volume occupied by the resin spacer 50C between the insulating substrate 20 and the heat radiating member 40 may be larger than that of the resin member 60.

Further, as in the resin spacer 50D shown in FIG. 16, the center of the rectangular parallelepiped may be hollowed out into a prismatic shape. The two through holes 90 shown in FIG. 16 also have one for filling the resin member 60 and the other for bleeding air.

In addition to this, as in the resin spacer 50E shown in FIG. 17, the ratio of the volume occupied by the resin spacer between the insulating substrate 20 and the heat radiating member 40 is smaller than that of the resin member 60, and the resin spacer 50E surrounds the insulating substrate 20. The shape of the resin member 60 may be prismatic.

Further, the thickness of the second insulating layer composed of the resin spacer 50 and the resin member 60 may be changed depending on the application of the power conversion device. For example, the voltage handled by the power conversion device for automobiles is about DC12V to DC1500V and AC1000V. In this case, the thickness of the second insulating layer composed of the resin spacer 50 and the resin member 60 may be 1 mm or less. By reducing the thickness of the second insulating layer composed of the resin spacer 50 and the resin member 60, the thermal resistance between the insulating substrate 20 and the heat radiating member 40 is reduced, so that the heat of the power semiconductor element 10 is reduced. The ability to dissipate heat can be enhanced.

As described above, the present invention is useful for a power conversion device, and is particularly excellent in that a die for press working is not required.

10 Power semiconductor devices, 20, 20A, 20B insulation substrate, 22 metal substrate (metal layer), 24 insulation layer, 32 ceramic substrate (insulation layer), 34 heat diffusion layer (metal layer), 40, 40A heat dissipation member, 50 , 50A, 50B, 50C, 50D resin spacer, 60 resin member, 70 protrusion, 80 wall, 90 through hole, 100, 100A, 100B power converter, 300 vacuum chamber, S1 one main surface, S2 other main surface

Claims (8)

Power semiconductor devices and
On the other hand, the insulating substrate on which the power semiconductor element is mounted on the main surface and
A heat radiating member facing the other main surface of the insulating substrate,
A resin spacer located between the other main surface and the heat radiating member and having an insulating property,
A resin member having an insulating property, which fills the remaining portion between the other main surface and the heat radiating member,
Equipped with
A power conversion device in which the insulating substrate is provided with a through hole connecting the one main surface and the other main surface to allow the resin member to enter. The number of the power semiconductor elements attached to the insulating substrate is a plurality.
The power conversion device according to claim 1, wherein the resin member also exists between the plurality of power semiconductor elements attached to the insulating substrate. The power conversion device according to claim 1 or 2, wherein the material of the insulating layer in the insulating substrate is ceramic. The power conversion device according to claim 3, wherein the heat radiating member is provided with a protrusion extending toward the insulating substrate and in contact with the side surface of the insulating layer. The power conversion device according to any one of claims 1 to 4, wherein the insulating substrate has a metal layer in contact with the resin member. The power conversion device according to any one of claims 1 to 5 , further comprising a wall provided so as to surround the side surface of the insulating substrate. The first mounting process of placing an insulating resin spacer on the heat radiating member,
The second mounting step of placing the insulating substrate to which the power semiconductor element is attached on the resin spacer, and
A filling step of filling a liquid and insulating resin member between the heat radiating member and the insulating substrate,
A method of manufacturing a power conversion device. The heat radiation member and the insulating substrate are placed in a vacuum chamber, and the heat radiation member and the insulating substrate are placed in a vacuum chamber.
The method for manufacturing a power conversion device according to claim 7 , further comprising a step of performing evacuation after the filling step.

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