JP6993115B2 - Plating equipment - Google Patents

Description

The present invention relates to a plating apparatus.

Conventionally, wiring, bumps (projective electrodes) and the like have been formed on the surface of a substrate such as a semiconductor wafer or a printed circuit board. An electrolytic plating method is known as a method for forming the wiring, bumps, and the like.

In the plating apparatus used in the electrolytic plating method, a circular substrate such as a wafer having a diameter of 300 mm is generally plated. However, in recent years, not only such circular substrates, but also from the viewpoint of cost effectiveness, the demand for square substrates is increasing in the semiconductor market, and it is required to clean, polish, or plate the square substrates. ing.

The plating apparatus has a plating tank, and for example, a substrate holder holding a substrate, an anode holder holding an anode, a regulation plate (shielding plate), and the like are housed in the plating tank. In the conventional plating apparatus for semiconductor substrates described in JP-A-2016-160521, the substrate size is relatively large, and it is not assumed that a plurality of substrates are processed at the same time. However, in recent years, the size of the chip formed on the substrate has become finer, and technological development of multi-layered chip structure such as three-dimensional mounting technology has been progressing. In addition, Fan-out technology (technology to form a rewiring layer in a wide area exceeding the chip area) has appeared, and with the further development of IoT technology, advanced packaging technology such as chips with various structures will be introduced. It is expected that further requests will be made. There is also an increasing need to plate and deposit vias, trenches, through holes, etc. provided on a wide variety of substrates. In particular, it is considered that the electrolytic plating technology has an advantage over the electroless plating technology and the like in terms of embedding performance and plating speed in vias having a high aspect ratio.

Based on the flow of such technology, in the future, it will be important to perform electroplating of various relatively small substrates having different characteristics at the same time without reducing the throughput. However, in the plating technology for semiconductor substrates that requires high quality control such as plating film thickness control, a plurality of substrates are plated at the same time while achieving the above-mentioned high quality that is expected to be required in the future. There has never been a technology.

Japanese Unexamined Patent Publication No. 2016-160521

One embodiment of the present invention has been made to solve one of the above-mentioned problems, and an object thereof is to realize at least a part of the above-mentioned high plating quality which is expected to be required in the future. Further, it is to provide a plating apparatus for plating a plurality of substrates.

In order to solve the above problems, in the first embodiment, a plurality of substrate holders configured to be able to hold one substrate and one anode are configured to be able to hold each of them. The plurality of anode holders are configured such that the plurality of anodes and the plurality of substrates have a one-to-one correspondence, and each of the plurality of anodes is arranged to face the corresponding substrate. A plurality of first shields provided between the anode holder and the corresponding anode and the substrate, and each of the first shields corresponds to the corresponding anode. It has a tubular penetrating portion through which an electric power line formed between the substrate and the anode can pass, and the penetrating portion is configured to adjust an electric field between the corresponding anode and the corresponding substrate. It has a configuration of a plating apparatus having a first shielding portion.

In this embodiment, a tubular penetration is configured to adjust the electric field between the corresponding anode and the corresponding substrate. Conventionally, when a plurality of substrates are plated in one plating tank, the formation of uniform current electric lines of force cannot be achieved when the number of processed sheets changes. In the present embodiment, since the first shielding portion configured to adjust the electric field is provided, even if the number of processed sheets changes, the current electric force is generated in the plurality of penetrating portions corresponding to the plurality of substrates to be processed at the same time. The distribution of lines becomes uniform. Therefore, even when the number of sheets to be processed changes, it is possible to provide a plating apparatus for applying a metal film having more uniform physical and chemical properties to all the substrates to be plated. It is possible to provide a plating apparatus for plating a plurality of substrates while realizing at least a part of the above-mentioned high plating quality expected to be required in the future. The physical / chemical properties mean the film thickness, chemical substance composition, surface morphology, and density of the metal film of the substrate. The uniform physical / chemical property means that the distribution of the physical / chemical property in the substrate at each location in one substrate is the same among all the substrates to be processed.

In the second embodiment, at least one of the plurality of first shields has a second shield for closing the penetration, which can be held by the second shield. A closed portion formed between the anode and the removable substrate so that the electric lines of force cannot pass through, and at least one of the plurality of first shielding portions is a closed portion. The plating apparatus according to claim 1, which does not have the second shielding portion, is adopted.

In the present embodiment, a closed portion is provided for the substrate holder and the anode holder on which the substrate to be plated is not arranged. The closure prevents the lines of electric force from passing through. Since the electric line of force formed between the substrate holder and the anode holder on which the substrate to be plated is arranged has a closed portion, it is possible that the electric line of force passes through the closed portion, that is, leaks to the closed portion.

In the case of the prior art, there was no closure between the substrate and the anode, only a penetration. The electric lines of force passing through the penetrating portion are affected by the penetrating portion having the substrate and the electric lines of force passing through other than the penetrating portion. Therefore, if a plurality of substrates are plated in one plating tank, the electric lines of force passing through a certain penetrating portion of the substrate are affected by the electric lines of force passing through the other penetrating portions. That is, the electric lines of force passing through the penetrating portion change depending on the positional relationship of the penetrating portion with the substrate with the other penetrating portion. Further, when a plurality of substrates are plated in one plating tank, the formation of uniform electric lines of force cannot be achieved if the number of processed sheets changes. In the present embodiment, since the closed portion is provided, even if the number of processed sheets changes, the distribution of electric lines of force becomes uniform in the plurality of penetrating portions corresponding to the plurality of substrates to be processed at the same time. Therefore, even when the number of sheets to be processed changes, it is possible to provide a plating apparatus for applying a metal film having more uniform physical and chemical properties to all the substrates to be plated.

Further, in the present embodiment, in addition to having a closed portion, a tubular penetrating portion is used. Therefore, each of the penetrating portions is less affected by the electric lines of force and has high independence. It is possible to provide a plating device capable of simultaneously plating a plurality of substrates in a single electrolytic cell and controlling the film thickness distribution for each substrate.

In the third embodiment, the second shielding portion has a configuration of a plating apparatus having a third shielding portion arranged on the substrate holder side and the anode holder side of the penetrating portion. ..

In the fourth embodiment, the second shielding portion has a configuration of a plating device that is removable from the closed portion.

In the fifth embodiment, the second shielding portion has an opening forming mechanism capable of forming an opening in the second shielding portion, and when the penetrating portion is closed, the opening is formed by the opening forming mechanism. It has a structure called a plating device that closes the space.

In the sixth embodiment, the first shielding portion has an adjusting mechanism for adjusting the opening area of the penetrating portion, and the adjusting mechanism is a plating device capable of closing the penetrating portion. Is taken.

In the seventh embodiment, the anode holder provided with the closed portion has a fourth shielding portion provided between the anode and the closed portion that can be held by the anode holder, and the said second. The shielding portion 4 is configured so that the electric lines of force formed between the anode and the substrate cannot pass through, and / or the substrate holder provided with the closing portion is such that the substrate holder is provided. It has a fifth shielding portion provided between the substrate that can be held and the closing portion, and the fifth shielding portion has the electric lines of force formed between the anode and the substrate. It has a structure called a plating device that is configured so that it cannot pass through.

In the eighth embodiment, there are a plurality of substrate holders configured to hold one substrate, and a plurality of anode holders configured to each hold one anode, wherein the plurality of anode holders are formed. Anodes and the plurality of substrates have a one-to-one correspondence, and each of the plurality of anodes has an anode holder configured to face one corresponding substrate and the anode. A plurality of shielding portions provided for each of the holders, each of which is provided between the corresponding anode holder and the substrate holder and is formed between the anode and the substrate. The anode holder side of the wall portion of the shielding portion having a plurality of shielding portions configured to have a tubular penetrating portion through which the electric power lines to be passed can pass, and forming each of the penetrating portions. The anode holder is arranged on the anode holder in the vicinity of the outer periphery of the corresponding anode, and the penetration space formed by each of the penetration portions is separately independent of each other.

In the present embodiment, the tubular penetrating spaces are separate from each other, and each substrate is individually surrounded by a shielding portion. Therefore, each of the penetrating portions is less affected by the electric lines of force and has high independence. It is possible to provide a plating device capable of simultaneously plating a plurality of substrates in a single electrolytic cell and controlling the film thickness distribution for each substrate. Due to the high degree of independence, even if the number of processed sheets changes, the distribution of electric lines of force becomes uniform on a plurality of substrates to be processed at the same time. It is possible to provide a plating apparatus that applies a metal film having uniform physical and chemical properties to all the substrates to be plated even when the number of processed sheets changes.

In the ninth aspect, the wall portion has a configuration of a plating device having a first through hole for removing the gas in the penetration portion from the penetration portion.

In the tenth aspect, the wall portion has a configuration of a plating apparatus having a second through hole for supplying the additive of the plating solution into the penetration portion.

In the eleventh embodiment, a plating apparatus having a supply amount adjusting mechanism for adjusting the supply amount of the additive is adopted.

In the twelfth embodiment, the plurality of substrate holders are integrated, and / or the plurality of anode holders are integrated, and / or the plurality of first shielding portions are integrated. It has adopted the composition.

In the thirteenth embodiment, the plurality of substrate holders are integrated, and / or the plurality of anode holders are integrated, and / or the plurality of shielding portions are integrated. I'm taking it.

In the fourteenth embodiment, each of the plurality of substrates is separately supplied with a first current from the plurality of first wirings branched from the first DC power supply, and / or each of the plurality of anodes. Has adopted a configuration of a plating apparatus in which a second current is separately supplied from a plurality of second wirings branched from a second DC power supply.

In the fifteenth embodiment, the first current flowing through each of the plurality of first wirings can be controlled independently and / or the second wiring flowing through each of the plurality of second wirings. The current of the above is controlled independently, and it is configured as a plating device.

In the sixteenth embodiment, the computer for controlling the plating apparatus of the fourteenth embodiment or the fifteenth embodiment controls ON / OFF of the plurality of first currents and / or the plurality of second currents. It is configured as a non-temporary computer-readable storage medium in which a program for functioning as a control means is recorded.

It is an overall layout drawing of the plating apparatus which concerns on this embodiment. It is a schematic plan view of the substrate holder used in the plating apparatus shown in FIG. 1. FIG. 3 is a schematic plan view of a square substrate held by the substrate holder shown in FIG. 2. It is a schematic vertical sectional front view which shows the plating tank and the overflow tank of the processing part shown in FIG. It is sectional drawing of the plating tank shown in FIG. FIG. 6 is a front view showing a guide provided on the board holder. FIG. 7 is a diagram showing details of the structure of the substrate holder around the guide. FIG. 8 is a front view of the shielding plate. FIG. 9 is a front view of the opening forming mechanism. FIG. 10 is a diagram showing the operation of the opening forming mechanism. It is a schematic vertical sectional front view which shows the plating tank and the overflow tank which concerns on another embodiment of this invention. It is sectional drawing of the plating tank shown in FIG. FIG. 13 is a diagram corresponding to FIG. 11 provided with a structure for supplying a plating solution. FIG. 14 is a diagram corresponding to FIG. 12 provided with a structure for supplying an additive. FIG. 15 is a block diagram showing the configuration of the supply amount adjusting mechanism. FIG. 16 is an explanatory diagram showing the configuration of the plating circuit. FIG. 17 shows an example of simultaneous plating of four square substrates. FIG. 18 shows an example in which only three square substrates S1 are plated. FIG. 19 is a view of a square substrate held in a substrate holder according to still another embodiment of the present invention and a dummy substrate as viewed from the anode side. FIG. 20 shows a regulation plate arranged between the substrate holder and the anode according to the embodiment shown in FIG.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In each of the following embodiments, the same or corresponding members are designated by the same reference numerals, and duplicated description will be omitted. FIG. 1 is an overall layout of the plating apparatus according to the present embodiment. As shown in FIG. 1, the plating apparatus 100 includes a load / unload unit 110 for loading a square substrate into a substrate holder or unloading a square substrate from the substrate holder, a processing unit 120 for processing a square substrate, and a processing unit 120. It can be roughly divided into a cleaning unit 20. The processing unit 120 further includes a pretreatment / posttreatment unit 120A that performs pretreatment and posttreatment of the square substrate, and a plating processing unit 120B that performs a plating treatment on the square substrate. The load / unload unit 110, the processing unit 120, and the cleaning unit 20 of the plating apparatus 100 are surrounded by separate frames (housings). The present invention is not limited to a square substrate, and can be applied to a substrate having an arbitrary shape such as a circular substrate.

The load / unload unit 110 has two cassette tables 25 and a substrate attachment / detachment mechanism 29. The cassette table 25 mounts a cassette 25a containing a square substrate. The substrate attachment / detachment mechanism 29 is configured to attach / detach a square substrate to / from a substrate holder (not shown). Further, a stocker 30 for accommodating the substrate holder is provided in the vicinity (for example, below) of the substrate attachment / detachment mechanism 29. At the center of these units 25, 29, and 30, a substrate transfer device 27 including a transfer robot that transfers a square substrate between these units is arranged. The substrate transfer device 27 is configured to be able to travel by the traveling mechanism 28.

The cleaning unit 20 has a cleaning device 20a that cleans and dries the square substrate after the plating treatment. The substrate transfer device 27 is configured to transfer the plated square substrate to the cleaning device 20a and take out the cleaned and dried square substrate from the cleaning device 20a.

The pre-treatment / post-treatment unit 120A includes a pre-wet tank 32, a pre-soak tank 33, a pre-rinse tank 34, a blow tank 35, and a rinse tank 36. In the pre-wet tank 32, the square substrate is immersed in pure water. In the pre-soak tank 33, the oxide film on the surface of the conductive layer such as the seed layer formed on the surface of the square substrate is removed by etching. In the prerinsing tank 34, the square substrate after presoaking is washed with a cleaning liquid (pure water or the like) together with the substrate holder. In the blow tank 35, the liquid of the square substrate after cleaning is performed. In the rinsing tank 36, the square substrate after plating is washed with a cleaning liquid together with the substrate holder. The pre-wet tank 32, the pre-soak tank 33, the pre-rinse tank 34, the blow tank 35, and the rinse tank 36 are arranged in this order.

The plating processing unit 120B has a plurality of plating tanks 39 including an overflow tank 38. Each plating tank 39 houses a plurality of square substrates inside, and immerses the square substrate in the plating solution held inside to perform plating such as copper plating on the surface of the square substrate. Here, the type of plating solution is not particularly limited, and various plating solutions are used depending on the intended use.

The plating device 100 is located on the side of each of these devices, and has a board holder transfer device 37 that transports a substrate holder together with a square substrate between these devices, for example, by adopting a linear motor method. The substrate holder transfer device 37 is configured to convey the substrate holder between the substrate attachment / detachment mechanism 29, the pre-wet tank 32, the pre-soak tank 33, the pre-rinse tank 34, the blow tank 35, the rinse tank 36, and the plating tank 39. Will be done.

FIG. 2 is a schematic plan view of a substrate holder used in the plating apparatus shown in FIG. In the present embodiment, one substrate holder can hold up to four substrates and perform plating at one time. When plating three or less substrates, a dummy substrate or insulating plate is arranged where the substrate is not arranged. In this embodiment, it can be considered that a plurality of (four) board holders holding one board are integrated. Correspondingly, a plurality of anode holders are integrated, and a first shielding portion and a second shielding portion are integrated as described later.

FIG. 3 is a schematic plan view of one of the square substrates held in the substrate holder shown in FIG. 2. In the present embodiment, four boards having the same shape and size can be held in one board holder, but in the present invention, any number of boards having different shapes and sizes can be held in one board holder. good. Further, by holding one or more substrates in one substrate holder, a plurality of such substrate holders may be independently placed in one plating tank 39 and plated at the same time.

As shown in FIG. 2, the substrate holder 11 has, for example, a plate-shaped substrate holder main body 12 made of vinyl chloride and an arm portion 13 connected to the substrate holder main body 12. The arm portion 13 has a pair of pedestals 14, and the substrate holder 11 is vertically suspended and supported by installing the pedestals 14 on the upper surface of the peripheral wall of each processing tank shown in FIG. Further, the arm portion 13 is provided with a connector portion 15 configured to come into contact with an electric contact provided in the plating tank 39 when the pedestal 14 is installed on the upper surface of the peripheral wall of the plating tank 39. As a result, the substrate holder 11 is electrically connected to an external power source, and voltage and current are applied to the square substrate held by the substrate holder 11.

The substrate holder 11 holds the square substrate S1 shown in FIG. 3 so that the surface to be plated is exposed. The substrate holder 11 has an electrical contact (not shown) that contacts the surface of the square substrate S1. When the substrate holder 11 holds the square substrate S1, the electric contacts are configured to come into contact with the contact positions CP1 shown in FIG. 3 provided along the two facing sides of the square substrate S1 or the four outer peripheral sides. Ru. The shape of the square substrate is a square or a rectangle in this embodiment. In the case of a rectangular rectangular substrate, the electrical contacts are configured to contact either of the long or short sides of the rectangular substrate, which face each other, or the four outer peripheral sides.

The steps for holding the square substrate S1 or the dummy substrate 68 in the substrate holder 11 are as follows.
(1) Bring the board holder 11 from the stocker 30 to the board attachment / detachment mechanism 29.
(2) Bring the square substrate S1 from the cassette table 25. In the case of four boards, bring the four boards and place them on the lower member of the board holder 11. If you have three, bring only three.
(3) For example, in the case of three boards, the dummy board 68 is brought from the cassette table 25 and placed in the remaining one area on the lower member of the board holder 11. The present invention is not limited to the case where the number of substrates that can be simultaneously held in the substrate holder is four.
(4) Next, the upper member of the substrate holder 11 is covered from above, and the respective substrates are sandwiched. A predetermined shielding plate 76, which will be described later, is previously installed on the upper member.
(5) The substrate holder 11 holding the substrate is carried by the substrate holder transfer device 37 in the order of the pretreatment / posttreatment section 120A and the plating tank 39, immersed in the plating solution, and electrolytically plated.
(6) After the plating is completed, wash in the rinse tank 36 and the blow tank 35 in order. Next, the square substrate S1 is sequentially removed by the substrate attachment / detachment mechanism 29, and each square substrate S1 is returned to the cassette table 25. If there is a dummy board 68, the dummy board 68 is returned to the cassette table 25. After the last board is removed from the holder, the board holder is returned to the stocker 30.

FIG. 4 is a schematic vertical sectional front view showing the plating tank 39 and the overflow tank 38 of the processing unit 120B shown in FIG. As shown in FIG. 4, the plating tank 39 holds the plating solution Q inside. The overflow tank 38 is provided on the outer periphery of the plating tank 39 so as to receive the plating liquid Q overflowing from the edge of the plating tank 39. A line 138, which is a plating solution supply path provided with a pump P, is connected to the bottom 43 of the plating tank 39.

The substrate holder 11 holding the square substrate S1 is housed in the plating tank 39. The substrate holder 11 is arranged in the plating tank 39 so that the square substrate S1 is immersed in the plating solution Q in a vertical state. The anode 62 held by the anode holder 60 is arranged at a position in the plating tank 39 facing the square substrate S1. As the anode 62, for example, phosphorus-containing copper may be used. The square substrate S1 and the anode 62 are electrically connected via a plating power supply (first DC power supply 168 described later), and a current is passed between the square substrate S1 and the anode 62 to reach the surface of the square substrate S1. A plating film (copper film) is formed.

A paddle 45 (shown in FIG. 14 described later) that reciprocates in parallel with the surface of the square substrate S1 to stir the plating solution Q is arranged between the square substrate S1 and the anode 62. By stirring the plating solution Q with the paddle 45, sufficient copper ions can be uniformly supplied to the surface of the square substrate S1. Further, between the paddle 45 and the anode 62, a regulation plate 50 made of a dielectric for making the potential distribution over the entire surface of the square substrate S1 more uniform is arranged. The regulation plate 50 has a main body portion 52 and a penetrating portion 51 for passing electric lines of force. The regulation plate 50 faces the board holder 11 over the entire surface of the tank 39 facing the board holder 11. That is, when viewed from the substrate holder 11 in the direction toward the regulation plate 50, the left end, the right end, and the bottom of the regulation plate 50 are in contact with the left end, the right end, and the bottom of the tank 39, respectively. The plating solution Q can pass through the regulation plate 50 only in the penetrating portion 51 facing the square substrate S1.

In the case of FIGS. 4 and 5, the board is held in three places of upper right, lower left, and lower right among the four places where the board shown in FIG. 2 can be placed, and the board is not placed in one place on the upper left. A dummy substrate 68 (or an insulating plate) is arranged at one place where the substrate is not arranged (hereinafter referred to as “non-plated electrode”). The three places where the square substrate S1 is arranged are hereinafter referred to as "plating electrodes".

FIG. 5 is an AA cross-sectional view of the plating tank 39 shown in FIG. FIG. 4 is a cross-sectional view taken along the line AA of FIG. In FIG. 5, the paddle 45 is omitted. As shown in FIGS. 4 and 5, both the regulation plate 50 at the position corresponding to the plated electrode and the regulation plate 50 at the position corresponding to the non-plated electrode have a penetration portion 51. The regulation plate 50 (first shielding portion) at a position corresponding to the plating electrode is provided between the anode holder 60 and the substrate holder 11 corresponding to the anode holder 60, and is formed between the anode 62 and the square substrate S1. It has a tubular penetrating portion 51 through which the electric lines of force to be passed can pass. The penetration 51 is configured to adjust the electric field between the corresponding anode and the corresponding substrate. The adjustment is performed, for example, by adjusting the opening area of the penetrating portion 51, as will be described later. The adjustment method is not limited to the method of adjusting the opening area. For example, the opening shape of the penetrating portion 51 can be adjusted by changing it to a circle, an ellipse, a polygon, or the like.

The regulation plate 50 (closed portion) at the position corresponding to the non-plated electrode is provided between the anode holder 60 and the substrate holder 11 corresponding to the anode holder 60, and is provided between the removable anode and the receivable substrate. It has a closed portion 82 through which the formed electric lines of force cannot pass. The closing portion 82 has a penetrating portion 51 having a tubular penetrating shape and a shutter-type shielding plate 70 (third shielding portion) for closing the penetrating portion 51. The shielding plate 70 is arranged on the substrate holder side and the anode holder side of the penetrating portion 51, respectively. The penetrating portion is closed by the two shielding plates 70.

The shielding plate 70 is removable from the guide 72 and the guide 80 provided on the regulation plate 50. That is, the shielding plate 70 is removable from the regulation plate 50. In FIG. 5, the shielding plate 70 at the position corresponding to the non-plated electrode and the shielding plate 70 at the position corresponding to the plated electrode differ in whether or not there is an opening, and appear to have different shapes. However, a shielding plate 70 having the same shape can also be used. Including this point, the structure of the shielding plate 70 will be described later.

In the closed portion 82, a shielding plate 74 (fourth shielding portion) that shields the anode 62 is provided on the front surface side (the side facing the square substrate S1) of the anode holder 60. By installing the shielding plate 74, the electric lines of force formed between the anode 62 and the dummy substrate 68 cannot pass through. Further, in the closed portion 82, a shielding plate 76 (fifth shielding portion) that shields the dummy substrate 68 is provided on the front surface side (the side facing the anode 62) of the substrate holder 11. By installing the shielding plate 76, the electric lines of force formed between the anode 62 and the square substrate S1 cannot pass through. The shielding plate 74 and the shielding plate 76 can be attached to and detached from the guide 78 provided on the anode holder 60 and the substrate holder 11, respectively. That is, the shielding plate 74 and the shielding plate 76 can be attached to and detached from the anode holder 60 and the substrate holder 11, respectively.

The thicknesses of the guide 72 and the guide 80 can be arbitrarily changed. By changing the thickness, the length B1 of the penetrating portion 51 of the regulation plate 50 can be adjusted. When changing the thickness of the guide 72 and the guide 80, it is not necessary to change the entire thickness of the guide 72 and the guide 80, but only the thickness of the portion facing the penetrating portion 51 may be changed.

In the plated electrode, an anode mask 64 that shields a part of the anode 62 is provided on the front surface side (the side facing the square substrate S1) of the anode holder 60. The anode mask 64 has an opening through which an electric line of force is passed between the anode 62 and the square substrate S1. The anode mask 64 is removable with respect to the guide 78. The anode mask 64 and the shielding plate 74 differ in the presence or absence of openings and appear to have different shapes. However, a shielding plate 74 having the same shape can also be used. In this respect, the shielding plate 74 can have a structure similar to that of the shielding plate 70.

In the plated electrode, a shielding plate 76 is provided on the front surface side (the side facing the anode 62) of the substrate holder 11. The shielding plate 76 on the plated electrode and the shielding plate 76 on the non-plated electrode differ in whether or not there is an opening, and appear to have different shapes. However, a shielding plate 76 having the same shape can also be used. In this respect, the shielding plate 74 can have a structure similar to that of the shielding plate 70.

Next, the guide 78 provided on the board holder 11 will be described with reference to FIG. The guide 78 of the anode holder 60 and the guide 72 of the regulation plate 50 have the same structure. FIG. 6 is a front view showing a guide 78 provided on the substrate holder 11. A guide 78 into which the shutter-type shielding plate 76 can be inserted is installed on the outer surface of the substrate holder 11. The guides 78 are arranged on the left and right sides of the square substrate S1. In FIG. 6, in order to individually identify the guides 78, reference numerals from 781 to 788 are attached to the guides 78 individually. In this embodiment, the guides 781,782,783,784 guide one shielding plate 76, and the guides 785,786,787,788 guide another shielding plate 76. That is, one shutter-type shielding plate 76 is inserted for each row of the square substrate S1. A stopper 84 for preventing the shielding plate 76 from falling is installed at the lowermost portion of the outer surface of the board holder 11. Two stoppers 84 are provided for one shielding plate 76.

FIG. 7 shows the details of the structure of the substrate holder 11 around the guide 78. FIG. 7A shows the details of the structure of the substrate holder 11 in the plating electrode, and is an enlarged view of the portion B in FIG. FIG. 7B shows the details of the structure of the substrate holder 11 in the non-plated electrode, and is an enlarged view of the portion C in FIG. The substrate holder 11 has an electrical contact 86 that contacts the surface of the square substrate S1. When the substrate holder 11 holds the square substrate S1, the electric contact 86 is configured to come into contact with the contact position CP1 shown in FIG. 3 provided along two opposite sides of the square substrate S1 or four outer peripheral sides. Will be done.

A seal 88 is installed on the bank portion 90 of the substrate holder 11 in order to insulate the electric contact 86 and the contact position CP1 from the plating solution Q. The bank portion 90 is attached to the substrate holder 11. The electric contact 86 and the contact position CP1 are sealed inside the substrate holder 11 by the seal 88. An insertion port 98 is provided between the guide 78 and the bank portion 90. The insertion port 98 has a space, and the shielding plate 76 is inserted into this space to hold the shielding plate 76.

In the plated electrode, the switch 94 for controlling the current to the square substrate S1 is ON, and in the non-plated electrode, the switch 94 for controlling the current to the square substrate S1 is OFF. The arrow 96 indicating the direction of current flow indicates the direction of electron flow.

Next, the structures of the shielding plate 76 (for the substrate), the shielding plate 74 (for the anode), and the shielding plate 70 (for the regulation plate 50), which are shutter-type shielding plates, will be described with reference to FIG. FIG. 8 is a front view of the shielding plate. The shielding plate 76 (for the substrate), the shielding plate 74 (for the anode), and the shielding plate 70 (for the regulation plate 50) have the same structure in terms of shape and presence / absence of openings. FIG. 8A is an example without an opening. For example, the shielding plate 76, the shielding plate 74, and the shielding plate 70 used when the square substrate S1 is not arranged at the position 102 and the position 104 in the column direction of FIG. 6 and the dummy substrate 68 is arranged at the position 102 and the position 104. The shape of.

FIG. 8B is an example in which the opening 106 is partially provided. The shape of the shielding plate 76, the shielding plate 74, and the shielding plate 70 used when the square substrate S1 is arranged at the position 102 in FIG. 6 and the dummy substrate 68 is arranged at the position 104. FIG. 8 (c) shows an example in which all the openings are 106. The shape is the shape of the shielding plate 76, the shielding plate 74, and the shielding plate 70 used when the dummy substrate 68 is not arranged at the position 102 and the position 104 of FIG. 6 and the square substrate S1 is arranged at the position 102 and the position 104.

The size of the opening 106 is set, for example, as follows. In the case of the shielding plate 76 arranged on the front surface of the square substrate S1, the size of the opening 106 is the same as that of the square substrate S1. In the case of the shielding plate 74 arranged in front of the anode 62, the size of the opening 106 can be set arbitrarily and is the same size as the outer diameter of the anode mask. In the case of the shielding plates 70 arranged on both sides of the penetrating portion 51, the size of the opening 106 can be arbitrarily set. For example, in the case of the shielding plate 70 on the square substrate S1 side, the size of the opening 106 depends on what kind of plating thickness distribution is desired to be created on the square substrate S1.

Next, FIGS. 9 and 10 show an example in which the size of the opening 106 can be adjusted. An embodiment in which the size of the opening 106 can be adjusted can be applied to any of the shielding plate 76, the shielding plate 74, and the shielding plate 70. The shielding plate 70 will be described as an example. The shielding plate 70 in the regulation plate 50 (first shielding portion) at a position corresponding to the plating electrode has an opening forming mechanism 108 capable of forming an opening 106 (opening) in the closing portion 82. When closing the penetrating portion, the opening 106 is closed by the opening forming mechanism 108.

The regulation plate 50 (second shielding portion) at a position corresponding to the non-plated electrode has a shielding plate 70, and the shielding plate 70 has an adjusting mechanism for adjusting the opening area of the penetrating portion 51. Can close the penetration portion 51. The opening forming mechanism 108 and the adjusting mechanism are the same mechanism in this embodiment. FIG. 9 is a front view of the opening forming mechanism 108, and FIG. 10 is a diagram showing the operation of the opening forming mechanism 108. As shown in FIG. 9, the opening forming mechanism 108 has a door 112 that opens and closes in the x-axis direction and a door 114 that opens and closes in the y-axis direction. The door 112 and the door 114 can be opened and closed independently of each other. In FIG. 9, the door 114 is located behind the door 112. The door 112 and the door 114 are double hinged doors built in the shielding plate 70.

As shown in FIG. 10, the opening forming mechanism 108 further includes a lever 116 for opening and closing the door 112, and a lever 118 for opening and closing the door 114. 10 (a) is a front view of the opening forming mechanism 108, and FIG. 10 (b) is a cross-sectional view taken along the line AA of FIG. 10 (a). 10 (c) is a cross-sectional view taken along the line BB of FIG. 10 (a).

The lever 116 is movable in the x-axis direction, and the door 112 is fully closed when the lever 116 is at the lower end in the x-axis direction. The door 112 is fully opened when the lever 116 is at the upper end in the x-axis direction. The lever 118 is movable in the y-axis direction, and the door 114 is fully closed when the lever 118 is at the left end in the y-axis direction. The door 114 is fully opened when the lever 118 is at the right end in the y-axis direction. The opening width of the double hinged door is variable by moving the lever, and the opening size can be adjusted. The plating apparatus may have a lever drive mechanism for driving the lever. By controlling the lever drive mechanism with the controller 175, the opening size can be automatically adjusted.

The upper and lower two doors constituting the door 112 can be fully opened to fully closed. The upper and lower doors move in the direction of the arrow 122 toward the center 126 of the opening 106 or in the direction opposite to the arrow 122 by the same amount of movement. Similarly, the upper and lower two doors constituting the door 114 can be changed from the fully open state to the fully closed state. The upper and lower doors move in the direction of the arrow 124 toward the center 126 of the opening 106 or in the direction opposite to the arrow 124 by the same amount of movement. It may be set to move by a different amount.

The length of the penetrating portion 51 has a preferable length. This point will be described below. As shown in FIG. 5, the square substrate S1 has an anode 62 and a distance D1 and is arranged so as to face each other. That is, the plating tank 39 has an interpolar distance D1. The penetration 51 of the regulation plate 50 has a length B1. One end surface of the penetrating portion 51 of the regulation plate 50 is separated from the square substrate S1 by a distance A1. As shown in FIG. 3, the electric contact 16 of the substrate holder 11 comes into contact with a portion separated from the center of the square substrate S1 by a distance L1. When plating the square substrate S1 in the plating tank 39, the interpolar distance D1 affects the uniformity of the film thickness formed on the square substrate S1. Similarly, the appropriate distance A1 between the penetrating portion 51 and the square substrate S1 and the length B1 of the penetrating portion 51 also affect the uniformity of the film thickness formed on the square substrate S1. As shown in FIG. 3, when power is supplied to the two opposite sides of the square substrate S1, there is a preferable relationship between the distance L1 from the center of the square substrate S1 to the electric contact 16 and the appropriate pole distance D1. Similarly, the distance L1 from the center of the square substrate S1 to the electrical contact 16 and the appropriate distance A1 between the penetrating portion 51 and the square substrate S1 and the distance L1 from the center of the square substrate S1 to the electrical contact 16 and penetrating. There is a favorable relationship with the length B1 of the portion 51.

When the distance between the center of the square substrate and the electrical contact is L1 and the distance between the square substrate and the anode is D1.
0.59 x L1-43.5 mm ≤ D1 ≤ 0.58 x L1-19.8 mm
It is preferable that the square substrate and the anode are arranged in the plating tank so as to satisfy the above relationship. When the length of the penetrating part is B1, the penetrating part is
B1 = 0.33 x L1-43.3 mm
It is preferable to have a length that satisfies the relationship of. When the distance between the surface of the square substrate housed in the plating apparatus and the penetrating portion is A1, it is preferable that the relationship of A1 = 20.8 mm is satisfied.

Next, another embodiment of the present invention will be described. In the plating apparatus of this embodiment, the regulation plate 50 in the non-plated electrode does not have the shielding plate 70 shown in FIG. Further, in the non-plated electrode, the shielding plate 74 and the shielding plate 76 are not used. In FIG. 5, these shielding plates 70, 74, and 76 can be used to independently control the concentration distribution of the plating solution on the plated electrode and the non-plated electrode. By using the shielding plates 70, 74, and 76, the concentration distribution of the plating solution in the plating electrode and the other plating electrodes can be controlled independently of each other.

In another embodiment of the present invention, as will be described later, the spaces where the plating solution exists in the plated electrode and the non-plated electrode are separated from each other. In addition, the space where the plating solution exists in the plating electrode and another plating electrode is separated from each other. By separating the spaces from each other, the concentration distribution of the plating solution in the plated electrode and the non-plated electrode can be controlled independently of each other. Similarly, the concentration distribution of the plating solution in the plating electrode and other plating electrodes can be controlled independently of each other.

Another embodiment will be described with reference to FIGS. 11-15. FIG. 11 is a schematic vertical sectional front view showing the plating tank 39 and the overflow tank 38 of the processing unit 120B shown in FIG. In the board holder 11, four board holders 11 configured to hold one board are integrated to form one board holder 11. Correspondingly, in the anode holder 60, four anode holders 60 configured to each hold one anode 62 are integrated to form one anode holder 60. .. The plurality of anodes 62 and the plurality of substrates S1 have a one-to-one correspondence, and each of the plurality of anodes 62 is arranged to face the corresponding one substrate S1.

In the regulation plate 50, four regulation plates 50 (shielding portions) provided one for each of the four anode holders are integrated to form one regulation plate 50. Each of the shielding portions has a tubular penetrating portion 51 provided between the corresponding anode holder 60 and the substrate holder 11 and through which electric lines of force formed between the anode 62 and the substrate S1 can pass. In FIG. 11, four penetrating portions 51 are provided in total.

As shown in FIG. 11, the regulation plate 50 may have a configuration in which the member 130 on the substrate holder 11 side and the member 132 on the anode holder 60 side are integrated. The member 130 faces the board holder 11 over the entire surface of the tank 39 facing the board holder 11. That is, when the member 130 is viewed from the substrate holder 11, the left end, the right end, and the bottom of the member 130 are in contact with the left end, the right end, and the bottom of the tank 39. On the other hand, the member 132 has only the thickness required to cover the through space 51. That is, the left end, the right end, and the bottom of the member 132 do not contact the left end, the right end, and the bottom of the tank 39.

The anode holder side of the wall portion 128 of the shielding portion forming each of the penetrating portions 51 is arranged on the anode holder 60 in the vicinity of the outer periphery of the corresponding anode 62. The four penetration spaces 51 formed by each of the four penetration portions 51 are independent of each other. The shielding plate 70 shown in FIG. 5 may be provided on the substrate holder 11 side of the regulation plate 50. Further, the shielding plate 74 shown in FIG. 5 may be provided on the anode holder 60 side of the regulation plate 50. The shielding plate 70 and the shielding plate 74 can be as shown in FIGS. 8 to 10.

FIG. 12 is an AA cross-sectional view of the plating tank 39 shown in FIG. 11 is a cross-sectional view taken along the line AA of FIG. A plurality of square substrates S1 are in the plating tank 39. The number of anodes 62 is the same as the number of electrode pairs, and the square substrate S1 and the anode 62 are arranged at opposite positions.

Next, the structure for supplying the plating solution Q to the plating tank 39 of FIG. 11 will be described with reference to FIG. FIG. 13A is a diagram corresponding to FIG. 11 having a structure for supplying the plating solution Q. 13 (b) is an enlarged view of part A of FIG. 13 (a). As shown in FIG. 13A, a line 138 is installed at the bottom of the plating tank 39 in order to supply and circulate the plating solution Q in the plating tank 39. The plating solution Q flows in from the bottom as shown by the arrow 140. When the plating solution Q is supplied and circulated in the plating tank 39, air 134 may accumulate in the upper part of the member 132. The wall portion 128 has a first through hole 136 for removing, for example, air 134, which is a gas in the through portion 51, from the through portion 51. The auto valve 142 may be provided in the first through hole 136. Then, in order to prevent electric field leakage, the auto valve 142 may be closed after the plating solution Q is supplied (that is, during plating).

Next, the structure for supplying the additive of the plating solution to the plating tank 39 of FIG. 12 will be described with reference to FIG. FIG. 14 is a diagram corresponding to FIG. 12 provided with a structure for supplying an additive. As shown in FIG. 14, a line 144 for supplying the additive is installed on the side surface of the plating tank 39 and the wall portion 128 of the penetrating portion 51. Additives flow in from the side as shown by arrow 140. The wall portion 128 has a second through hole 148 for supplying the additive of the plating solution into the through portion 51.

The additive is supplied when the concentration of the additive in the plating solution is adjusted. This makes it possible to prevent the concentration of the additive in the plating tank from becoming non-uniform. The concentration of the additive in the vicinity of the plating electrode is made uniform by stirring the additive using the paddle 45 provided in the vicinity of the square substrate S1. The paddle 45 reciprocates in the left-right direction in FIG. 14 as shown by the arrow 150. The auto valve 152 is provided in the second through hole 152. Then, in order to prevent the electric field from leaking, the auto valve 152 is closed after the additive is supplied (that is, during circulation).

The plating apparatus 100 has a supply amount adjusting mechanism 154 that adjusts the supply amounts of the plating solution Q and the additive. The supply amount adjusting mechanism 154 will be described with reference to FIG. FIG. 15 is a block diagram showing the configuration of the supply amount adjusting mechanism 154. The supply amount adjusting mechanism 154 includes a plating solution supply unit 164, lines 138 and 144 connected to the plating tank 39, and a pump 162 with a valve for supplying the plating solution Q and additives to the lines 138 and 144.

The liquid supply unit 164 contains a plating solution Q containing no additives, for example, a VMS tank 156 containing a copper sulfate solution (VMS: Vergin Make up Solution), and 3 types of additives, for example. It has 158 tanks. The tank 156 is supplied with the plating solution Q from the utility 160 containing the plating solution Q containing no additive. The utility 160 is provided outside the supply amount adjusting mechanism 154. The utility 160 and the tank 156 are connected by a pump 162 with a valve.

The plating solution Q and additives from the tank 156 and the tank 158 are supplied to the tank 166 and mixed. The mixed plating solution Q is supplied from the tank 166 to the bottom of the plating tank 39 via the line 138 by a pump 162. At the time of plating, the additive is supplied to the plating tank 39 from the side surface of the plating tank 39 by the pump 162 via the line 144. The pump 162 may be automatically controlled by the controller 175.

Next, the configuration of the plating circuit will be described with reference to FIG. FIG. 16 is an explanatory diagram showing the configuration of the plating circuit. Each of the plurality of boards is supplied with the first current separately from the plurality of first wirings branched from the first DC power supply, and / or each of the plurality of anodes is supplied from the second DC power supply. The second current can be supplied separately from the plurality of branched second wirings. Further, the first current flowing through each of the plurality of first wires can be controlled independently, and / or the second current flowing through each of the plurality of second wires can be controlled independently. It is controllable.

In FIG. 16, each of the plurality of substrates S1 is separately supplied with a first current from the first DC power supply 168 via the rectifier 170 from the plurality of branched first wirings 172. This is also shown in FIG. 5 and the like. As shown in FIG. 5 and the like, each of the plurality of anodes 62 can be supplied with a second current independently from the plurality of second wirings 174 branched from the first DC power supply 168.

Further, as shown in FIG. 16, the first current flowing through each of the plurality of first wirings 172 can be controlled independently by the switch 176. The second current flowing through each of the plurality of second wirings 174 can be controlled independently by the switch 178. In FIG. 16, three square substrates S1 and one dummy substrate 68 are arranged in the substrate holder 11. The switch 176 corresponding to the three square substrates S1 is ON. The switch 176 corresponding to one dummy board 68 is OFF. Wiring corresponding to the three square substrates S1 is shown by CH1, CH3, and CH4 in FIG. The wiring corresponding to one dummy board 68 is shown by CH2.

The switch 176 can be turned ON / OFF by program control. The current circuit of the dummy substrate 68 and the anode 62 paired with the dummy substrate 68 is turned off by program control. In FIG. 16, as an example, the substrate 1, the substrate 3, and the substrate 4 are plated, and the dummy substrate 68 is not plated. At this time, CH1: ON, CH2: OFF, CH3: ON, CH4: ON. In FIG. 16, the circuit on the board holder 11 regarding CHs 3 and 4 is not shown.

The substrate holder 11 has feeding portions on the left and right sides of each of the square substrates S1. For the anode holder, as shown in FIG. 5 and the like, power is supplied only to the center of the anode. Any wiring and contacts can be used around the square substrate S1 and the anode.

Regarding the plating apparatus 100 of FIGS. 4 to 6, the plating film thickness of an example in which four square substrates S1 were simultaneously plated (FIG. 17) and an example in which only three square substrates S1 were plated (FIG. 18). The uniformity was confirmed. As a result, it was confirmed that the uniformity of the film thickness was almost the same between the four-sheet plating (FIG. 17) and the three-sheet plating (FIG. 18). In FIG. 18, the current is OFF between the dummy substrate 68 and its paired anode 62. Further, the length 180 is the length of the plated region. The length 182 is the length of the square substrate S1.

Further, with respect to FIG. 18, (1) the switch 176 that supplies power to the dummy board 68 and the switch 178 that supplies power to the anode 62 that is the pair thereof are turned off, and (2) the switch 176 that supplies power to the dummy board 68 is turned off. Then, the uniformity of the plating film thickness was confirmed when the switch 178 for supplying power to the anode 62, which is the pair thereof, was turned on. As a result, in the case of (1), the uniformity of the film thickness of the three square substrates S1 was good, but in the case of (2), the uniformity of the film thickness of the three square substrates S1 was good. It decreased significantly. Therefore, regarding the dummy substrate 68, it is preferable not to supply power to the dummy substrate 68 and to the anode 62.

According to the example of the embodiment of the present invention, a plurality of square substrates S1 can be plated at the same time in a single electrolytic cell. Even if the number of square substrates S1 to be plated at the same time changes, it is possible to obtain a metal film having uniform physical and chemical properties in all the square substrates S1 to be processed.

By adjusting the size of the opening 106 as shown in FIGS. 9 and 10, the following can be done. When the opening width of the anode mask 64 is narrowed, the film thickness becomes thinner from the central portion to the peripheral portion of the square substrate S1. That is, the film thickness distribution is a mountain shape with the central part as the top of the mountain. When the opening width of the anode mask 64 is widened, the film thickness increases from the central portion to the peripheral portion of the square substrate S1. That is, the film thickness distribution is valley-shaped with the central part as the valley bottom.

When the opening width of the shielding plate 70 is narrowed, the film thickness is locally thinner than that of the other portions only at the end portion of the square substrate S1. When the opening width of the shielding plate 70 is widened, the film thickness is locally thicker than that of the other portions only at the end portion of the square substrate S1. Therefore, the film thickness distribution can be controlled for each region on the single square substrate S1. By changing the film thickness in the substrate, the stress of the square substrate S1 itself can be controlled by the obtained metal film. This is also possible with a circular substrate or the like.

In the embodiment, an example of plating on one side has been described, but it is also possible to plate on both sides. Although it is assumed that the contact position CP1 is located on the left and right sides of the square substrate S1, the contact position CP1 can be provided between one side and the four sides of the square substrate S1.

In embodiments, the surface of the substrate to be plated may include Co, Ru, Ti, Cr, Cu, and materials selected from any combination thereof. The metal to be plated on these metals may include copper, SnAg alloys, Au, as well as materials selected from Co, Ni, Ru, Sn, In, Pd, Ge, and any combination thereof. ..

As shown in FIG. 1, the plating apparatus has a controller 175 configured to control each of the above-mentioned parts. The controller 175 has a memory 175B in which a predetermined program is stored, a CPU (Central Processing Unit) 175A for executing the program of the memory 175B, and a control unit 175C realized by the CPU 175A executing the program. The control unit 175C may, for example, control the transfer of the substrate transfer device 27, control the attachment / detachment of the substrate to / from the substrate holder in the substrate attachment / detachment mechanism 29, control the transfer of the substrate holder transfer device 37, and control the plating current and plating time in each plating tank 39. In addition, the opening sizes of the shielding plate 70, the shielding plate 74, and the shielding plate 76 arranged in each plating tank 39 can be controlled. Further, the controller 175 is configured to be communicable with a higher-level controller (not shown) that collectively controls the plating device and other related devices, and can exchange data with the database of the higher-level controller.

The program of the memory 175B is for making a computer (CPU175A) for controlling a plating apparatus function as a control means for controlling ON / OFF of a plurality of first currents and / or a plurality of second currents. The program is recorded. This program is recorded on a non-temporary computer-readable storage medium, such as a magnetic recording medium, flash memory, or the like. Here, the storage medium constituting the memory 175B stores various setting data and various programs such as a plating processing program described later. As the storage medium, a memory such as a ROM or RAM that can be read by a computer, or a known one such as a hard disk, a CD-ROM, a disc-shaped storage medium such as a DVD-ROM or a flexible disk, can be used.

The present invention can also be applied to a cup-type plating apparatus in which a plating solution is continuously supplied into a cup-type plating tank to bring the plating solution into contact with a wafer. This embodiment will be described with reference to FIGS. 19 and 20. FIG. 19 is a view of the square substrate S1 held in the substrate holder 184 and the dummy substrate 68 as viewed from the anode side. FIG. 20 shows a regulation plate 50 disposed between the substrate holder 184 and the anode. In the cup-shaped plating tank, the substrate holder 184 has a configuration capable of holding, for example, four substrates. Power can be supplied independently to each of the four boards. The four regions of the plating tank facing each of the four substrates are divided and partitioned by the regulation plate 50. The regulation plate 50 has a penetrating portion 51, and the penetrating portion 51 located at a position facing the dummy substrate 68 is closed by the shielding plate 70.

According to the above-described embodiment of the present invention, there is provided a plating apparatus for plating a plurality of substrates while realizing and achieving at least a part of the above-mentioned high plating quality expected to be required in the future. can. In addition, in a single electrolytic cell, multiple substrates are plated at the same time, and even if the number of processed sheets to be processed at the same time changes, the physical (thickness) is uniform for all the substrates to be plated. Etc.) ・ We can provide plating equipment that applies a metal film with chemical properties. Further, it is possible to provide a plating apparatus capable of simultaneously plating a plurality of substrates in a single electrolytic cell and controlling the film thickness distribution independently for each substrate.

Although examples of the embodiments of the present invention have been described above, the above-described embodiments of the present invention are for facilitating the understanding of the present invention and do not limit the present invention. The present invention can be modified and improved without departing from the spirit thereof, and it goes without saying that the present invention includes an equivalent thereof. In addition, any combination or omission of the claims and the components described in the specification is possible within the range in which at least a part of the above-mentioned problems can be solved, or in the range in which at least a part of the effect is exhibited. Is.
As described above, the present invention has the following forms.
Form 1
Multiple board holders configured to hold one board,
A plurality of anode holders configured so that each anode can hold one anode, and the plurality of anodes and the plurality of substrates have a one-to-one correspondence, and each of the plurality of anodes has a one-to-one correspondence. An anode holder configured to face the corresponding substrate,
A plurality of first shields provided between the corresponding anode and the substrate, each of which is between the corresponding anode and the corresponding substrate. A first shield having a tubular penetration through which the formed lines of electric force can pass, wherein the penetration is configured to adjust the electric field between the corresponding anode and the corresponding substrate. Has a plating device.
Form 2
At least one of the plurality of first shielding portions has a second shielding portion for closing the penetration portion, and the second shielding portion can hold the anode and the anode which can be held. It is a closed portion formed between the substrate and the electric power line so as not to pass through.
The plating apparatus according to the first embodiment, wherein the other at least one of the plurality of first shielding portions does not have the second shielding portion.
Form 3
The plating apparatus according to the second embodiment, wherein the second shielding portion has a third shielding portion arranged on the substrate holder side and the anode holder side of the penetrating portion, respectively.
Form 4
The plating apparatus according to Form 2 or 3, wherein the second shielding portion is removable from the closed portion.
Form 5
The second shielding portion has an opening forming mechanism capable of forming an opening in the second shielding portion, and has a front.
The plating apparatus according to any one of embodiments 2 to 4, wherein when the penetrating portion is closed, the opening is closed by the opening forming mechanism.
Form 6
The plating apparatus according to the first embodiment, wherein the first shielding portion has an adjusting mechanism for adjusting the opening area of the penetrating portion, and the adjusting mechanism can close the penetrating portion.
Form 7
The anode holder provided with the closed portion has a fourth shielding portion provided between the anode and the closed portion that can be held by the anode holder, and the fourth shielding portion is The substrate holder, which is configured to prevent the electric lines of force formed between the anode and the substrate from passing through and / or is provided with the closed portion, is the substrate that can be held by the substrate holder. A form having a fifth shielding portion provided between the closing portion and the fifth shielding portion so that the current that can flow between the anode and the substrate cannot pass through. The plating apparatus according to any one of 2 to 5.
Form 8
Multiple board holders configured to hold one board,
A plurality of anode holders configured to each hold one anode, wherein the plurality of anodes and the plurality of substrates have a one-to-one correspondence, and each of the plurality of anodes has a one-to-one correspondence. An anode holder configured to face one of the corresponding substrates,
A plurality of shielding portions provided for each of the anode holders, each of which is provided between the corresponding anode holder and the substrate holder, and is provided between the anode and the substrate. It has a plurality of shields configured to have a tubular penetration through which the lines of electric force formed in the can pass.
The anode holder side of the wall portion of the shielding portion forming each of the penetration portions is arranged on the anode holder in the vicinity of the outer periphery of the corresponding anode, and the penetration space formed by each of the penetration portions is formed. Plating equipment that is independent of each other.
Form 9
The plating apparatus according to the eighth embodiment, wherein the wall portion has a first through hole for removing a gas in the penetration portion from the penetration portion.
Form 10
The plating apparatus according to form 8 or 9, wherein the wall portion has a second through hole for supplying an additive of a plating solution into the penetration portion.
Form 11
The plating apparatus according to the tenth embodiment, which has a supply amount adjusting mechanism for adjusting the supply amount of the additive. Form 12
One of embodiments 1 to 7, wherein the plurality of substrate holders are integrated and / or the plurality of anode holders are integrated and / or the plurality of first shields are integrated. The plating apparatus described in the section.
Form 13
13. Plating equipment.
Form 14
Each of the plurality of substrates is supplied with a first current separately from the plurality of first wirings branched from the first DC power supply, and / or each of the plurality of anodes is a second DC. The plating apparatus according to any one of embodiments 1 to 13, wherein a second current is independently supplied from a plurality of second wirings branched from a power source.
Form 15
The first current flowing through each of the plurality of first wires can be controlled independently, and / or the second current flowing through each of the plurality of second wiress can be controlled separately. Independent control
The plating apparatus according to Form 14, which is possible.
Form 16
A program for making a computer for controlling the plating apparatus according to the 14th or 15th function as a control means for controlling ON / OFF of the plurality of first currents and / or the plurality of second currents. A non-temporary computer-readable storage medium on which is recorded.

11 ... Board holder 51 ... Penetration part 60 ... Anode holder 68 ... Dummy board 70 ... Shielding plate 74 ... Shielding plate 76 ... Shielding plate 82 ... Closing part 136 ... First through hole 148 ... Second through hole

Claims (14)

Multiple board holders configured to hold one board,
A plurality of anode holders configured so that each anode can hold one anode, and the plurality of anodes and the plurality of substrates have a one-to-one correspondence, and each of the plurality of anodes has a one-to-one correspondence. An anode holder configured to face the corresponding substrate,
A plurality of first shields provided between the corresponding anode and the substrate, each of which is between the corresponding anode and the corresponding substrate. A first shield having a tubular penetration through which the formed lines of electric force can pass, wherein the penetration is configured to adjust the electric field between the corresponding anode and the corresponding substrate. Have,
At least one of the plurality of first shielding portions has a second shielding portion for closing the penetration portion, and the second shielding portion can hold the anode and the anode which can be held. It is a closed portion formed between the substrate and the electric power line so as not to pass through.
At least one of the plurality of first shields does not have the second shield.
A plating apparatus in which the plurality of substrate holders, the plurality of anode holders, and the plurality of first shielding portions are arranged in one plating tank . The plating apparatus according to claim 1 , wherein the second shielding portion has a third shielding portion arranged on the substrate holder side and the anode holder side of the penetrating portion, respectively. The plating apparatus according to claim 1 or 2 , wherein the second shielding portion is removable from the closed portion. The second shielding portion has an opening forming mechanism capable of forming an opening in the second shielding portion, and when closing the penetrating portion, the opening is closed by the opening forming mechanism. The plating apparatus according to any one of 1 to 3 . A plurality of board holders configured to hold one board, and
A plurality of anode holders configured so that each anode can hold one anode, and the plurality of anodes and the plurality of substrates have a one-to-one correspondence, and each of the plurality of anodes has a one-to-one correspondence. An anode holder configured to face the corresponding substrate,
A plurality of first shields provided between the corresponding anode and the substrate, each of which is between the corresponding anode and the corresponding substrate. A first shield having a tubular penetration through which the formed lines of electric force can pass, wherein the penetration is configured to adjust the electric field between the corresponding anode and the corresponding substrate. Have,
The plurality of substrate holders, the plurality of anode holders, and the plurality of first shielding portions are arranged in one plating tank.
The first shielding portion has an adjusting mechanism for adjusting the opening area of the penetrating portion, and the adjusting mechanism is capable of closing the penetrating portion. The anode holder provided with the closed portion has a fourth shielding portion provided between the anode and the closed portion that can be held by the anode holder, and the fourth shielding portion is The substrate holder, which is configured to prevent the passage of electric lines of force formed between the anode and the substrate and / or is provided with the closed portion, is a substrate that can be held by the substrate holder. It has a fifth shielding portion provided between the closed portion and the fifth shielding portion so that the electric lines of force formed between the anode and the substrate cannot pass through. The plating apparatus according to any one of claims 1 to 4. Multiple board holders configured to hold one board,
A plurality of anode holders configured to each hold one anode, wherein the plurality of anodes and the plurality of substrates have a one-to-one correspondence, and each of the plurality of anodes has a one-to-one correspondence. An anode holder configured to face one of the corresponding substrates,
A plurality of shielding portions provided for each of the anode holders, each of which is provided between the corresponding anode holder and the substrate holder, and is provided between the anode and the substrate. It has a plurality of shields configured to have a tubular penetration through which the lines of electric force formed in the can pass.
The anode holder side of the wall portion of the shielding portion forming each of the penetration portions is arranged on the anode holder in the vicinity of the outer periphery of the corresponding anode, and the penetration space formed by each of the penetration portions is formed. They are independent of each other and
The wall portion has a first through hole for removing the gas in the penetration portion from the penetration portion.
A plating apparatus in which the plurality of substrate holders, the plurality of anode holders, and the plurality of shielding portions are arranged in one plating tank . The plating apparatus according to claim 7 , wherein the wall portion has a second through hole for supplying an additive for a plating solution into the penetration portion. The plating apparatus according to claim 8 , further comprising a supply amount adjusting mechanism for adjusting the supply amount of the additive. One of claims 1 to 6 , wherein the plurality of substrate holders are integrated and / or the plurality of anode holders are integrated and / or the plurality of first shields are integrated. The plating apparatus according to item 1. The plurality of substrate holders are integrated, and / or the plurality of anode holders are integrated, and / or the plurality of shielding portions are integrated, according to any one of claims 7 to 9 . The plating equipment described. Each of the plurality of substrates is supplied with a first current separately from the plurality of first wirings branched from the first DC power supply, and / or each of the plurality of anodes is a second DC. The plating apparatus according to any one of claims 1 to 11 , wherein a second current is separately supplied from a plurality of second wirings branched from a power source. The first current flowing through each of the plurality of first wires can be controlled independently, and / or the second current flowing through each of the plurality of second wiress can be controlled separately. 12. The plating apparatus according to claim 12 , which can be controlled independently. To make the computer for controlling the plating apparatus according to claim 12 or 13 function as a control means for controlling ON / OFF of the plurality of first currents and / or the plurality of second currents. A non-temporary computer-readable storage medium on which the program is recorded.

Images