JP6947966B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP6947966B2 JP6947966B2 JP2017102972A JP2017102972A JP6947966B2 JP 6947966 B2 JP6947966 B2 JP 6947966B2 JP 2017102972 A JP2017102972 A JP 2017102972A JP 2017102972 A JP2017102972 A JP 2017102972A JP 6947966 B2 JP6947966 B2 JP 6947966B2
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- JP
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- Prior art keywords
- light emitting
- light
- lenticular lens
- lens sheet
- emitting device
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Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G02F1/133611—Direct backlight including means for improving the brightness uniformity
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/133603—Direct backlight with LEDs
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G02F1/133605—Direct backlight including specially adapted reflectors
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- G—PHYSICS
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G02F1/133602—Direct backlight
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133606—Direct backlight including a specially adapted diffusing, scattering or light controlling members
- G02F1/133607—Direct backlight including a specially adapted diffusing, scattering or light controlling members the light controlling member including light directing or refracting elements, e.g. prisms or lenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Planar Illumination Modules (AREA)
- Led Device Packages (AREA)
Description
基体10は、上面を有し、複数の光源20を支持する。また、複数の光源20に電力を供給する。基体10は、例えば、基板11と、導電層12とを含む。さらに絶縁層13を備えていてもよい。
基体10は、絶縁層13を備えていてもよい。絶縁層13は、基体10において、導体層12のうち、光源20等が接続される部分を覆って基板11上に設けられている。つまり、絶縁層13は電気絶縁性を有し、導体層12の少なくとも一部を覆う。好ましくは、絶縁層13は光反射性を有している。絶縁層13が光反射性を有することによって、光源20から基体10側へ出射する光を反射し、光の取り出し効率を向上させることができる。また、絶縁層13が光反射性を有することによって、光源から出射して透光積層体に当たる光のうち、反射した光も反射し、光の取り出し効率を向上させることができる。これらの基体で反射した光も透光積層体を透過することで、より輝度ムラを抑制することができる。
本開示において、「光源」とは光を発する部分のことをいう。発光素子、発光素子と波長変換部材とを組み合わせた構造、発光素子を内蔵するパッケージ品、例えばSMDの発光装置、パッケージ型白色LEDと呼ばれる素子等が挙げられ、形状や構造に特に制限はない。
接続部材23は、導電性の材料によって形成されている。具体的には接続部材23の材料は、Au含有合金、Ag含有合金、Pd含有合金、In含有合金、Pb−Pd含有合金、Au−Ga含有合金、Au−Sn含有合金、Sn含有合金、Sn−Cu含有合金、Sn−Cu−Ag含有合金、Au−Ge含有合金、Au−Si含有合金、Al含有合金、Cu−In含有合金、金属とフラックスの混合物等である。
図2Bに示すように、発光素子21と基体10との間にアンダーフィル部材24が配置されていることが好ましい。アンダーフィル部材24は、発光素子21からの光を効率よく反射できるようにすること、熱膨張率を発光素子21に近づけること等を目的として、アンダーフィル部材24はフィラーを含有している。アンダーフィル部材24は、図2Bに示すように、発光素子21の側面も覆っていてもよいし、側面は覆っていなくてもよい。
波長変換部材22は、発光素子21から出射する光の少なくとも一部を吸収し、異なる波長の光に変換して放射する。波長変換部材22は、発光素子21の上面21aを少なくとも覆う。本実施形態では、波長変換部材22は、発光素子21の側面に設けられたアンダーフィル部材24も覆っている。波長変換部材22は、例えば、セリウムで賦活されたイットリウム・アルミニウム・ガーネット(YAG)系蛍光体、セリウムで賦活されたルテチウム・アルミニウム・ガーネット(LAG)、ユウロピウム及び/又はクロムで賦活された窒素含有アルミノ珪酸カルシウム(CaO−Al2O3−SiO2)系蛍光体、ユウロピウムで賦活されたシリケート((Sr,Ba)2SiO4)系蛍光体、βサイアロン蛍光体、CASN系又はSCASN系蛍光体等の窒化物系蛍光体、KSF系蛍光体(K2 SiF6 :Mn)、硫化物系蛍光体などを含む。これらの蛍光体以外の蛍光体であって、同様の性能、作用、効果を有する蛍光体も使用することができる。
被覆部材30は、光源20を外部環境から保護するとともに、光源20から出力される光の配光特性を光学的に制御する。つまり、主として被覆部材30の外面における光の屈折によって光の出射方向を調節する。被覆部材30は、光源20を覆って基体10上に配置される。
光源20を覆う被覆部材30から出射する光は透光積層体50を透過する。透光積層体50は、第1レンチキュラーレンズシート51と、第2レンチキュラーレンズシート52と、第1レンチキュラーレンズシート51および第2レンチキュラーレンズシート52の間に位置するハーフミラー53とを含む。透光積層体50を透過することによって、被覆部材30から出射する光の輝度ムラが低減される。
第1レンチキュラーレンズシート51および第2レンチキュラーレンズシート52はそれぞれ、シリンドリカルレンズが複数配列された透光性シートである。シリンドリカルレンズ間に形成された溝の間隔、つまり、各シリンドリカルレンズの幅は、例えば、150μm〜550μmであり、200μm〜450μmが好ましく、250μm〜350μmがより好ましい。第1レンチキュラーレンズシート51および第2レンチキュラーレンズシート52として、バックライト、照明等の光学部品用の市販されているレンチキュラーレンズシートを用いることができる。第1レンチキュラーレンズシートの複数の溝の伸びる方向と第2レンチキュラーレンズシート52の複数の溝の伸びる方向とが互いに交差するように第1レンチキュラーレンズシート51および第2レンチキュラーレンズシート52は配置されている。好ましくは、第1レンチキュラーレンズシート51の複数の溝の伸びる方向と第2レンチキュラーレンズシート52の複数の溝の伸びる方向とは、85°以上95°以下の角度をなしている。
ハーフミラー53は一方の主面から入射する光の一部を反射し、残りの光を透過させる。垂直入射時におけるハーフミラー53の反射率は、光源20の発光波長帯域に対して30〜75%であることが好ましい。反射率が30%よりも低いと第1レンチキュラーレンズシート51側へ反射する光の量が少なくなり、輝度ムラ抑制の効果が低減する。また、反射率が75%より高いと光の取り出し効率が低下する。
透光積層体50は、さらに、光拡散板54を有していてもよい。この場合、光拡散板54は第2レンチキュラーレンズシート52の上面に配置される。光拡散板54は、入射する光を拡散させて透過する。光拡散板54は、たとえば、ポリカーボネイト樹脂、ポリスチレン樹脂、アクリル樹脂、ポリエチレン樹脂等、可視光に対して光吸収の少ない材料によって構成されている。光を拡散させる構造は、光拡散板54の表面に凹凸を設けたり、光拡散板54中に屈折率の異なる材料を分散させたりすることによって、光拡散板54に設けられている。光拡散板は、光拡散シート、ディフューザーフィルム等の名称で市販されているものを利用してもよい。
発光装置100によれば、光源20から出射した光は、第1レンチキュラーレンズシート51と第2レンチキュラーレンズシート52との間にハーフミラー53が配置された透光積層体50を透過することによって、輝度ムラが抑制される。特に、バットウイング型の配光特性を有するレンズである被覆部材30と透光積層体50とを組み合わせることによって、例えば、第1レンチキュラーレンズシート51と基体10との間隔ODが光源20のピッチ(間隔)Pの0.25倍以下であっても、輝度ムラがほとんど目立たない発光装置を実現することができる。したがって、本開示の発光装置100によれば、薄型で輝度ムラが低減された面発光装置を実現することができる。
1.試料の作製
本開示の発光装置における輝度ムラ改善の効果を確認するため、図1に示す構造の発光装置を作製し、輝度ムラを測定した結果を説明する。
実施例、比較例1および比較例2の発光装置の発光面を同じ条件で撮影した。結果をそれぞれ図6A、図7Aおよび図8Aに示す。
11 基板
12 導電層
13 絶縁層
20 光源
21 発光素子
21a 上面
22 波長変換部材
23 接続部材
24 アンダーフィル部材
30、31 被覆部材
30d、31d 凹部
50 透光積層体
51 第1レンチキュラーレンズシート
52 第2レンチキュラーレンズシート
53 ハーフミラー
54 光拡散板
100 発光装置
Claims (10)
- 上面を有する基体と、
前記基体の上面に配置された複数の光源と、
前記複数の光源を挟んで前記基体と対向するように配置された第1レンチキュラーレンズシートと、
前記第1レンチキュラーレンズシートの上面側に位置しているハーフミラーと、
前記ハーフミラーの上面側に位置しており、前記第1レンチキュラーレンズシートの複数の溝の伸びる方向と交差する方向に伸びる複数の溝を有する第2レンチキュラーレンズシートと、
を備え、
前記第2レンチキュラーレンズシートの上面側および前記第1レンチキュラーレンズシートの下面側にハーフミラーを備えていない、発光装置。 - 前記第1レンチキュラーレンズシートの前記複数の溝の伸びる方向と前記第2レンチキュラーレンズシートの前記複数の溝の伸びる方向とは、85°以上95°以下の角度をなしている、請求項1に記載の発光装置。
- 前記基体の前記上面は光反射性を有する、請求項1または2に記載の発光装置。
- 前記第2レンチキュラーレンズシートの上面側に位置する光拡散板をさらに備える、請求項1から3のいずれかに記載の発光装置。
- 前記ハーフミラーは誘電体多層膜を含む、請求項1から4のいずれかに記載の発光装置。
- 前記ハーフミラーの垂直方向の反射率特性において、前記光源の発光ピーク波長より長波長側の帯域は、短波長側の帯域よりも広い、請求項5に記載の発光装置。
- 前記複数の光源のそれぞれを被覆する複数の被覆部材を更に備え、
前記被覆部材は前記光源の直上に凹部または貫通孔を有しており、
前記被覆部材の底面の幅が、前記被覆部材の最大幅よりも小さい、請求項1から6のいずれかに記載の発光装置。 - 前記被覆部材は、光軸高さが前記最大幅よりも小さい請求項7に記載の発光装置。
- 前記複数の光源のそれぞれは、
少なくとも1つの発光素子と、
前記発光素子を被覆する波長変換部材と、
を有する請求項1から8のいずれかに記載の発光装置。 - 前記第1レンチキュラーレンズシートと前記基体との間隔は前記複数の光源のうち隣接する光源におけるピッチの0.25倍以下である請求項1から9のいずれかに記載の発光装置。
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