JP6737598B2 - Inspection device and inspection method - Google Patents

Description

The present invention relates to an inspection device and an inspection method for inspecting a defect or the like of a pattern formed on a surface of an inspection target.

The conventional semiconductor inspection device is a device and technology corresponding to the 100 nm design rule. However, the samples to be inspected are diversified such as wafers, exposure masks, EUV masks, NIL (nanoimprint lithography) masks and substrates, and at present, devices and technologies corresponding to design rules of 5 to 30 nm are required for samples. ing. That is, it is required to cope with generations in which the node of L/S (line/space) or hp (half pitch) in the pattern is 5 to 30 nm. When inspecting such a sample with an inspection apparatus, it is necessary to obtain high resolution.

Here, the sample is an exposure mask, an EUV mask, a nanoimprint mask (and template), a semiconductor wafer, an optical element substrate, an optical circuit substrate, or the like. Some of these have a pattern and some do not. Some have a pattern, and some have a pattern. The patterns having no unevenness are formed by using different materials. Some of the patterns do not have an oxide film and some do not have an oxide film.

As a conventional semiconductor inspection device, by controlling the movement of the sample accompanying the continuous movement of the stage and the deflection of the trajectory of the secondary beam by the deflection means in synchronization with each other, the image of the secondary beam on the two-dimensional CCD sensor is controlled. There is known an electron beam inspection apparatus using an electron image tracking type electron optical device in which an image of the same detection region of a sample is projected on the same portion of a two-dimensional CCD sensor during the synchronization period. (For example, refer to Patent Document 1).

Japanese Patent No. 4332922

However, since the two-dimensional CCD sensor performs signal detection after converting electrons into light, it is necessary to provide means such as photoelectric conversion on the sensor surface. The electrons of the secondary beam are converted into light by photoelectric conversion or a scintillator, and the image information of the light is transmitted to the CCD sensor surface, whereby the electrons are detected. Therefore, the resolution is deteriorated due to the loss in the photoelectric conversion mechanism and the light transmission mechanism, and the detection of a small foreign matter is unstable.

The present invention has been made to pay attention to the above problems and to solve them effectively. An object of the present invention is to provide an inspection apparatus and an inspection method capable of performing a highly sensitive electron image following defect inspection on an inspection sample.

An inspection apparatus according to the present invention includes a stage device that mounts a sample and moves continuously, an electron optical device, and a control device that controls operations of the stage device and the electron optical device. The electro-optical device generates a primary optical system that irradiates the sample on the stage with a primary beam and an image of a secondary beam generated from the sample by irradiating the sample with the primary beam. It has a detector including a two-dimensional sensor and a secondary optical system that guides the secondary beam to the two-dimensional sensor. The secondary optical system synchronizes with the movement of the stage device, and while the sample is being moved by the movement of the stage device, a secondary beam generated from the same part of the sample is emitted from the two-dimensional sensor. A deflector for deflecting the secondary beam by generating a superposed electric field by a multipole so that the secondary beam is incident on the same portion is included. The two-dimensional sensor is an EB (Electron Bombardment) semiconductor sensor that directly detects the electrons of the secondary beam without converting it into light and outputs an image signal.

According to the inspection device of the present invention, since the two-dimensional sensor directly detects the electrons of the secondary beam without converting it into light and outputs the image signal, the deterioration of resolution due to the loss in the photoelectric conversion mechanism or the light transmission mechanism. It is possible to obtain a high MTF (Modulation Transfer Function) and a high contrast. As a result, the S/N of a weak signal of a small foreign matter can be increased, and higher sensitivity can be obtained.

Specifically, for example, the two-dimensional sensor may be any of EB-CMOS, EB-CCD, and EB-TDI.

In the inspection apparatus according to the present invention, the electro-optical device further includes an image processing unit that performs image processing on the image signal output by the two-dimensional sensor and outputs information regarding a defect, and the control device includes the stage device and the stage device. The defect inspection may be performed by operating the electron optical device to perform the defect inspection, and operating the stage device and the electron optical device based on the information on the defect output from the image processing unit. According to such an aspect, since the defect is reviewed using the same stage device and electron optical device as in the defect inspection, realignment of the sample is not required, and high coordinate position accuracy can be realized. Further, since the two-dimensional sensor is used for imaging, the review can be performed at a higher speed than in the case of using a scanning electron microscope (SEM).

In the inspection device according to the present invention, the control device may perform imaging by the detector at the time of review with the magnification of the secondary optical system being higher than that at the time of defect inspection. According to such an aspect, it is possible to image a defective portion with higher resolution.

In the inspection device according to the present invention, the control device may stop the movement of the stage device for each defective portion and perform imaging by the detector at the time of review. According to such an aspect, it is possible to reduce the blurring of the image of the secondary beam on the two-dimensional sensor due to the deflection of the secondary beam or the vibration of the stage device, so that a clearer image of the defective portion is obtained. It is possible.

In the inspection method according to the present invention, the sample is placed on a stage device and continuously moved, and the sample on the stage device is irradiated with a primary beam, and the sample is irradiated with the primary beam. An inspection method for guiding a secondary beam generated from a sample to a two-dimensional sensor to generate a secondary beam image, wherein the sample is moved by the movement of the stage device in synchronization with the movement of the stage device. Meanwhile, the secondary beam is deflected by generating a superposition electric field by a multipole so that the secondary beam generated from the same portion of the sample is incident on the same portion of the two-dimensional sensor, In step (2), the electrons of the secondary beam are directly detected without being converted into light and an image signal is output.

According to the inspection method of the present invention, since the two-dimensional sensor directly detects the electrons of the secondary beam without converting it into light and outputs the image signal, the deterioration of the resolution due to the loss in the photoelectric conversion mechanism or the light transmission mechanism. It becomes possible to obtain a high MTF and contrast without any problem. As a result, the S/N of a weak signal of a small foreign matter can be increased, and higher sensitivity can be obtained.

According to the present invention, it is possible to perform highly sensitive electron image following type defect inspection on an inspection sample.

It is an elevation view showing the main components of the inspection device concerning one embodiment of the present invention. It is a top view of the main components of the inspection apparatus shown in FIG. 1, and is the figure seen along the line BB of FIG. It is a figure which shows the structure of the electron optical device which concerns on one Embodiment of this invention. FIG. 4 is a diagram for explaining a beam path in the electron optical device shown in FIG. 3. (A) It is a figure explaining operation|movement of the high speed deflector which deflects a secondary beam so that a secondary beam may track the movement of a wafer according to an embodiment of the present invention. (B) It is a figure which shows the relationship between the irradiation area|region and visual field area which concern on one Embodiment of this invention. (C) It is a figure which shows the relationship between the irradiation area|region and visual field area|region which concern on one Embodiment of this invention. It is a figure which shows the structure of the combination unit of the high-speed deflector, the imaging lens, and the intermediate electrode which concern on one Embodiment of this invention. It is a flowchart which shows operation|movement of the simulation apparatus which concerns on one Embodiment of this invention. It is a figure for demonstrating the inspection die and reference die contained in a sample.

Hereinafter, an inspection apparatus according to an embodiment of the present invention will be described with reference to the drawings. It should be noted that the embodiments described below are merely examples for carrying out the present invention, and the present invention is not limited to the specific configurations described below. In practicing the present invention, a specific configuration according to the embodiment may be appropriately adopted.

1 and 2, main components of the inspection device 1 according to the present embodiment are shown in an elevation and a plane.

The inspection apparatus 1 according to the present embodiment includes a cassette holder 10 that holds a cassette that stores a plurality of samples, a mini-environment device 20, a main housing 30 that defines a working chamber, a mini-environment device 20, and a main environment device 20. A loader housing 40 arranged between the housing 30 and defining two loading chambers, a loader 60 for loading the sample from the cassette holder 10 onto a stage device 50 arranged in the main housing 30, An electron optical device 70 attached to the housing 30, an optical microscope 3000, and a scanning electron microscope (SEM) 3002 are provided, and they are arranged in a positional relationship as shown in FIGS. 1 and 2. The inspection apparatus 1 further includes a pre-charge unit 81 arranged in the vacuum main housing 30, a potential application mechanism for applying a potential to the sample, an electron beam calibration mechanism, and positioning of the sample on the stage device 50. And an optical microscope 871 that constitutes an alignment control device 87 for performing.

Here, the sample is an exposure mask, an EUV mask, a nanoimprint mask (and template), a semiconductor wafer, an optical element substrate, an optical circuit substrate, or the like. Some of these have a pattern and some do not. Some have a pattern, and some have a pattern. The patterns having no unevenness are formed by using different materials. Some of the patterns do not have an oxide film and some do not have an oxide film.

<Cassette holder>
The cassette holder 10 includes a plurality of cassettes (for example, closed cassettes such as SMIF and FOUP manufactured by Assist) that store a plurality of (for example, 25) samples arranged in parallel in the vertical direction ( In this embodiment, two pieces are held. The cassette holder has a structure suitable for automatically loading the cassette in the cassette holder 10 by a robot or the like, and an open cassette structure suitable for manually loading the cassette holder 10. Each can be arbitrarily selected and installed. In this embodiment, the cassette holder 10 is of a type in which the cassette c is automatically loaded. For example, the cassette holder 10 includes an elevating table 11 and an elevating mechanism 12 that moves the elevating table 11 up and down. 2 can be automatically set in the state shown by the chain line in FIG. 2, and after being set, it is automatically rotated to the state shown in the solid line in FIG. Oriented to the axis of rotation. Further, the lifting table 11 is lowered to the state shown by the chain line in FIG. As described above, the cassette holder used when automatically loading or the cassette holder used when manually loading may have a well-known structure as appropriate. The description is omitted.

The sample stored in the cassette c is a sample to be inspected, and such an inspection is performed after the process of processing the sample in the semiconductor manufacturing process or during the process. Specifically, a sample that has undergone a film forming process, CMP, ion implantation, a sample having a pattern formed on its surface, or a sample on which a pattern has not yet been formed is stored in a cassette. Since a large number of the samples contained in the cassette c are arranged in parallel in the vertical direction, the first transport unit 61 can hold the sample at any position by the first transport unit 61. The arm 612 can be moved up and down.

<Mini-environment device>
1 and 2, a mini-environment device 20 includes a housing 22 that defines a mini-environment space 21 that is controlled in atmosphere, and a gas such as clean air in the mini-environment space 21. A gas circulation device 23 for circulating and controlling the atmosphere, an exhaust device 24 for collecting and exhausting a part of the air supplied into the mini-environment space 21, and a mini-environment space 21 are provided. And a pre-aligner 25 for roughly positioning the sample to be inspected.

The housing 22 has a top wall 221, a bottom wall 222, and a peripheral wall 223 that surrounds the four circumferences, and has a structure that shields the mini-environment space 21 from the outside. In order to control the atmosphere in the mini-environment space, the gas circulation device 23 is attached to the top wall 221 in the mini-environment space 21, and cleans the gas (air in this embodiment) to one or more. The gas supply unit 231 that allows the clean air to flow in a laminar flow direction right below through the gas outlets (not shown) and the bottom wall 222 disposed in the mini-environment space 21 are provided toward the bottom. The recovery duct 232 collects the air that has flowed down, and the conduit 233 that connects the recovery duct 232 and the gas supply unit 231 to return the recovered air to the gas supply unit 231. In this embodiment, the gas supply unit 231 takes in about 20% of the supplied air from the outside of the housing 22 to clean it, but the proportion of the gas taken in from the outside can be arbitrarily selected. .. The gas supply unit 231 includes a HEPA or ULPA filter of known structure for producing clean air. The laminar downward flow of clean air, that is, the downflow is mainly supplied so as to flow through the transport surface of the first transport unit 61 arranged in the mini-environment space 21, and is generated by the transport unit. It is designed to prevent dust that may be attached to the sample. Therefore, the downflow ejection port does not necessarily have to be at a position close to the top wall as shown in the drawing, but may be located above the conveyance surface of the conveyance unit. Also, it is not necessary to flow over the entire mini-environment space. In some cases, the cleanliness can be secured by using ionic wind as the clean air. Further, a sensor for observing the cleanliness can be provided in the mini-environment space, and the device can be shut down when the cleanliness deteriorates. An entrance 225 is formed in a portion of the peripheral wall 223 of the housing 22 adjacent to the cassette holder 10. A shutter device having a known structure may be provided near the doorway 225 to close the doorway 225 from the mini-environment device side. The laminar downflow generated in the vicinity of the sample may have a flow rate of 0.3 to 0.4 m/sec, for example. The gas supply unit may be provided outside the mini-environment space 21 instead of inside the mini-environment space 21.

The discharge device 24 includes a suction duct 241 disposed below the first transport unit 61 at a position below the sample transport surface of the first transport unit 61, and a blower (not shown) disposed outside the housing 22. And a conduit (not shown) connecting the suction duct 241 and the blower. The discharge device 24 flows down around the first transport unit 61, sucks a gas containing dust that may be generated by the first transport unit 61 by the suction duct 241, and passes through the conduit and the blower. And discharge it to the outside of the housing 22. In this case, the gas may be discharged into an exhaust pipe (not shown) drawn near the housing 22.

The pre-aligner 25 arranged in the mini-environment space 21 is formed on an orientation flat formed on the sample (a flat portion formed on the outer periphery of a circular sample, which will be referred to as an orientation flat hereinafter) or on the outer peripheral edge of the sample. The one or more V-shaped notches or notches thus formed are optically or mechanically detected to preposition the rotational position of the sample about the axis OO with an accuracy of about ±1 degree. I am supposed to keep it. The pre-liner 25 constitutes a part of a mechanism that determines the coordinates of the inspection target, and is responsible for rough positioning of the inspection target. Since this pre-aligner 25 itself may have a known structure, description of its structure and operation will be omitted.

Although not shown, a recovery duct for the discharging device may be provided below the pre-aligner 25 to discharge the dust-containing air discharged from the pre-aligner 25 to the outside.

<Main housing>
In FIGS. 1 and 2, a main housing 30 defining a working chamber 31 includes a housing body 32, which is mounted on a vibration isolator or vibration isolator 37 disposed on a base frame 36. It is supported by a mounted housing support device 33. The housing support device 33 includes a frame structure 331 assembled in a rectangular shape. The housing main body 32 is disposed and fixed on the frame structure 331, and has a bottom wall 321 mounted on the frame structure, a top wall 322, and a peripheral wall connected to the bottom wall 321 and the top wall 322 and surrounding four circumferences. 323 to isolate the working chamber 31 from the outside. In this embodiment, the bottom wall 321 is made of a steel plate having a relatively thick wall so that distortion is not generated due to the load of equipment such as the stage device 50 placed on the bottom wall 321. Good. In this embodiment, the housing body 32 and the housing support device 33 are assembled into a rigid structure, and the vibration isolation device 37 prevents vibrations from the floor on which the base frame 36 is installed from being transmitted to this rigid structure. It is supposed to block. An inlet/outlet 325 for sample loading/unloading is formed in a peripheral wall 323 of the housing main body 32 adjacent to a loader housing, which will be described later.

The anti-vibration device 37 may be an active type having an air spring, a magnetic bearing, or the like, or a passive type having these. Since any of them may have a known structure, description of the structure and function of itself will be omitted. The working chamber 31 is kept in a vacuum atmosphere by a vacuum device (not shown) having a known structure. Below the base frame 36, the control device 2 for controlling the operation of the entire device is arranged.

<Loader housing>
1 and 2, the loader housing 40 includes a housing body 43 that defines a first loading chamber 41 and a second loading chamber 42. The housing body 43 has a bottom wall 431, a top wall 432, a peripheral wall 433 surrounding the four circumferences, and a partition wall 434 for partitioning the first loading chamber 41 and the second loading chamber 42. Can be isolated from the outside. The partition wall 434 is formed with an opening, that is, an entrance/exit 435 for exchanging a sample between both loading chambers. Further, entrances and exits 436 and 437 are formed in a portion of the peripheral wall 433 adjacent to the mini-environment device and the main housing. The housing body 43 of the loader housing 40 is mounted on and supported by the frame structure 331 of the housing support device 33. Therefore, floor vibration is not transmitted to the loader housing 40. The doorway 436 of the loader housing 40 and the doorway 226 of the housing 22 of the mini-environment device 20 are aligned with each other, and there is a shutter for selectively blocking communication between the mini-environment space 21 and the first loading chamber 41. A device 27 is provided. The shutter device 27 includes a sealing member 271 that surrounds the entrances and exits 226 and 436 and is in close contact with and fixed to the peripheral wall 433, and a door 272 that cooperates with the sealing member 271 to prevent air from flowing through the entrance and exit. And a drive device 273 for moving the door. Further, the inlet/outlet port 437 of the loader housing 40 and the inlet/outlet port 325 of the housing body 32 are aligned with each other, and there is a shutter device 45 for selectively blocking the communication between the second loading chamber 42 and the working chamber 31. It is provided. The shutter device 45 surrounds the entrances and exits 437 and 325, is in close contact with the peripheral walls 433 and 323, and is fixed to the sealing materials 451, and the sealing material 451 cooperates with the circulation of air through the entrances and exits. It has a door 452 for blocking and a drive device 453 for moving the door. Further, the opening formed in the partition wall 434 is provided with a shutter device 46 that closes it by a door 461 to selectively block the communication between the first and second loading chambers. These shutter devices 27, 45 and 46 are capable of hermetically sealing each chamber when in the closed state. Since these shutter devices may be publicly known devices, detailed description of the structure and operation thereof will be omitted. The method of supporting the housing 22 of the mini-environment device 20 and the method of supporting the loader housing are different from each other, and vibration from the floor is prevented from being transmitted to the loader housing 40 and the main housing 30 via the mini-environment device 20. Therefore, a cushioning material for vibration isolation may be arranged between the housing 22 and the loader housing 40 so as to airtightly surround the entrance and exit.

In the first loading chamber 41, a sample rack 47 that supports a plurality of (two in the present embodiment) samples in a horizontal state by vertically separating them is arranged. The sample rack 47 is provided with columns that are fixed to each other at four corners of a rectangular substrate 471 in an upright state, and each column 472 is formed with a two-stage support portion, and the periphery of the sample W is provided on the support portion. It is designed to be mounted and held. Then, the tips of the arms of the first and second transport units, which will be described later, are brought close to the sample from between adjacent columns, and the sample is gripped by the arm.

The atmosphere of the loading chambers 41 and 42 can be controlled to a high vacuum state (degree of vacuum is 10 ⁻⁵ to 10 ⁻⁶ Pa) by a vacuum exhaust device (not shown) having a known structure including a vacuum pump (not shown). Has become. In this case, the first loading chamber 41 can be kept in a low vacuum atmosphere as a low vacuum chamber, and the second loading chamber 42 can be kept in a high vacuum atmosphere as a high vacuum chamber to effectively prevent contamination of the sample. By adopting such a structure, the sample contained in the loading chambers 41 and 42 and subjected to the next defect inspection can be transferred into the working chamber 31 without delay. By adopting such loading chambers 41 and 42, the throughput of defect inspection is improved, and the degree of vacuum around the laser light source required to be stored in a high vacuum state is as high as possible. Can be

A vacuum exhaust pipe and a vent pipe (not shown) for an inert gas (for example, dry pure nitrogen) are connected to the first and second loading chambers 41 and 42, respectively. Thereby, the atmospheric pressure condition in each loading chamber is achieved by the inert gas vent (injecting the inert gas to prevent oxygen gas other than the inert gas from adhering to the surface). The device itself for performing such an inert gas vent may have a known structure, and thus a detailed description thereof will be omitted.

<Stage device>
The stage device 50 includes a fixed table 51 arranged on the bottom wall 321 of the main housing 30, a Y table 52 that moves in the Y direction (a direction perpendicular to the paper surface in FIG. 1) on the fixed table, and a Y table on the Y table. An X table 53 that moves in the X direction (horizontal direction in FIG. 1), a rotary table 54 that can rotate on the X table, and a holder 55 that is arranged on the rotary table 54 are provided. The sample is releasably held on the sample mounting surface 551 of the holder 55. The holder may have a known structure capable of releasably holding the sample mechanically or by an electrostatic chuck method. The stage device 50 uses a servo motor, an encoder, and various sensors (not shown) to operate a plurality of tables as described above, thereby performing electron optical analysis on the sample held by the holder on the mounting surface 551. Positioning can be performed with high accuracy in the X direction, Y direction, and Z direction (vertical direction in FIG. 1) with respect to the electron beam emitted from the apparatus 70, and in the direction around the axis vertical to the support surface of the sample (θ direction). It is like this. The positioning in the Z direction may be performed by finely adjusting the position of the mounting surface on the holder in the Z direction. In this case, the reference position of the mounting surface is detected by a position measuring device (laser interference distance measuring device using the principle of an interferometer) using a fine diameter laser, and the position is controlled by a feedback circuit (not shown), or together with it. Instead, the notch or orientation flat position of the sample is measured to detect the plane position and rotation position of the sample with respect to the electron beam, and the rotary table is rotated and controlled by a stepping motor or the like capable of controlling a minute angle. The servomotors 521, 531 and the encoders 522, 532 for the stage device 50 are arranged outside the main housing 30 in order to prevent the generation of dust in the working chamber as much as possible. Since the stage device 50 may have a known structure used in, for example, a stepper, detailed description of its structure and operation will be omitted. The laser interference distance measuring device may also have a known structure, and thus detailed description of its structure and operation will be omitted.

By inputting the rotational position and X, Y position of the sample with respect to the electron beam to a signal detection system or an image processing system described later in advance, standardization of a signal indicating the rotational position and X, Y position of the sample obtained at the time of inspection. You can also plan. Further, the sample chuck mechanism provided in this holder is adapted to apply a voltage for chucking the sample to the electrodes of the electrostatic chuck, and the sample chuck mechanism is provided at three points (preferably at equal intervals in the circumferential direction) on the outer periphery of the sample. It is designed to be pressed and positioned. The sample chuck mechanism includes two fixed positioning pins and one pressing clamp pin. The clamp pin is adapted to realize automatic chucking and automatic release, and constitutes a conducting point for voltage application.

In this embodiment, the table that moves in the left-right direction is the X table and the table that moves in the up-down direction is the Y table in FIG. 2, but the table that moves in the left-right direction is the Y table in the figure, and the table moves in the up-down direction. The moving table may be the X table.

<loader>
The loader 60 includes a robot-type first transfer unit 61 arranged in the housing 22 of the mini-environment device 20 and a robot-type second transfer unit 63 arranged in the second loading chamber 42. I have it.

The first transport unit 61 has a multi-joint arm 612 that is rotatable about an axis O ₁ -O ₁ with respect to the drive unit 611. Although the multi-joint arm may have any structure, this embodiment has three parts pivotally attached to each other. One portion of the arm 612 of the first transport unit 61, that is, the first portion closest to the driving unit 611, is a shaft rotatable by a driving mechanism (not shown) of a known structure provided in the driving unit 611. 613 is attached. The arm 612 can be rotated about an axis O ₁ -O ₁ by a shaft 613 and can be expanded and contracted in the radial direction with respect to the axis O ₁ -O ₁ as a whole by relative rotation between the parts. A gripping device 616 for gripping a sample, such as a mechanical chuck or an electrostatic chuck having a known structure, is provided at the tip of the third portion of the arm 612 farthest from the shaft 613. The drive unit 611 is vertically movable by an elevating mechanism 615 having a known structure.

In the first transport unit 61, the arm 612 extends toward the direction M1 or M2 in either one of the two cassettes c held by the cassette holder 10 to arm the sample contained in the cassette c. It is placed on the table or is grasped and taken out by a chuck (not shown) attached to the tip of the arm. After that, the arm contracts (a state as shown in FIG. 2), and the arm rotates to a position where it can extend in the direction M3 of the pre-aligner 25 and stops there. Then, the arm 612 extends again, and the sample held by the arm 612 is placed on the pre-aligner 25. After receiving the sample in the reverse direction from the pre-liner 25, the arm 612 further rotates and stops at the position (direction M4) where it can extend toward the second loading chamber 41, and the sample in the second loading chamber 41 is stopped. The sample is transferred to the rack 47. In the case of mechanically gripping the sample, the peripheral edge of the sample (range of about 5 mm from the peripheral edge) is gripped. This is because a device (circuit wiring) is formed on the entire surface of the sample except for the peripheral portion, and if this part is gripped, the device is destroyed and defects are generated.

The second transport unit 63 basically has the same structure as the first transport unit 61, and is different only in that the sample is transported between the sample rack 47 and the mounting surface of the stage device 50. Therefore, detailed description will be omitted.

In the loader 60, the first and second transfer units 61 and 63 substantially transfer the sample from the cassette held by the cassette holder 10 onto the stage device 50 arranged in the working chamber 31 and vice versa. The movement of the arm of the transport unit in the vertical direction is performed simply by taking out the sample from the cassette and inserting it into the sample rack, placing the sample in the sample rack and taking it out, and the sample. It is only when the device is placed on the stage device 50 and taken out therefrom. Therefore, a large sample, for example, a sample having a diameter of 30 cm or 45 cm can be moved smoothly.

<Transport of sample>
Next, the transfer of the sample from the cassette c supported by the cassette holder 10 to the stage device 50 arranged in the working chamber 31 will be described step by step.

The cassette holder 10 has a structure suitable for manually setting the cassette as described above, and has a structure suitable for automatically setting the cassette. In this embodiment, when the cassette c is set on the lift table 11 of the cassette holder 10, the lift table 11 is lowered by the lift mechanism 12 so that the cassette c is aligned with the doorway 225.

When the cassette is aligned with the doorway 225, a cover (not shown) provided on the cassette c is opened, and a cylindrical cover is disposed between the cassette c and the doorway 225 of the minienvironment. The inside of c and the inside of the mini-environment space 21 are shut off from the outside. Since these structures are known, detailed description of their structures and operations will be omitted. If a shutter device for opening and closing the doorway 225 is provided on the mini-environment device 20 side, the shutter device operates to open the doorway 225.

On the other hand, the arm 612 of the first transfer unit 61 is stopped in a state of being directed in either the direction M1 or M2 (in this description, the direction of M2), and when the doorway 225 is opened, the arm extends and the tip ends inside the cassette. Receive one of the samples stored in. It should be noted that the vertical position adjustment of the arm 612 and the sample to be taken out from the cassette c is performed by vertically moving the driving unit 611 and the arm 612 of the first transport unit 61 in this embodiment. The lifting table 11 may be moved up and down, or both may be performed.

When the arm 612 completes the reception of the sample, the arm 612 contracts, operates the shutter device to close the doorway (when the shutter device is present), and then the arm 612 rotates about the axis O ₁ -O _1. It is ready to extend in the direction M3. Then, the arm 612 extends and the sample placed on the tip or gripped by the chuck is placed on the pre-aligner 25, and the pre-aligner 25 changes the direction of the sample in the rotation direction (the direction around the central axis perpendicular to the sample surface). Position within a predetermined range. When the positioning is completed, the first transport unit 61 receives the sample from the pre-aligner 25 at the tip of the arm 612, and then contracts the arm 612 so that the arm 612 can be extended in the direction M4. Then, the door 272 of the shutter device 27 moves to open the access ports 226 and 436, the arm 612 extends, and the sample is placed on the upper side or the lower side of the sample rack 47 in the first loading chamber 41. Before the shutter device 27 is opened and the sample is transferred to the sample rack 47 as described above, the opening 435 formed in the partition wall 434 is airtightly closed by the door 461 of the shutter device 46.

In the process of transporting the sample by the first transport unit 61, clean air flows in a laminar flow (as a downflow) from the gas supply unit 231 provided on the housing 22 of the mini-environment device 20, and during the transport. Prevent dust from adhering to the upper surface of the sample. Part of the air around the transport unit 61 (mainly dirty air at about 20% of the air supplied from the supply unit in this embodiment) is sucked from the suction duct 241 of the discharge device 24 and discharged to the outside of the housing. .. The remaining air is recovered via the recovery duct 232 provided at the bottom of the housing 22 and returned to the gas supply unit 231 again.

When the sample is placed on the sample rack 47 in the first loading chamber 41 of the loader housing 40 by the first transport unit 61, the shutter device 27 is closed to seal the inside of the loading chamber 41. Then, the first loading chamber 41 is filled with an inert gas and the air is expelled, and then the inert gas is also discharged to create a vacuum atmosphere in the loading chamber 41. The vacuum atmosphere of the first loading chamber 41 may have a low degree of vacuum. When the degree of vacuum in the loading chamber 41 is obtained to some extent, the shutter device 46 operates to open the doorway 435 closed by the door 461, the arm 632 of the second transfer unit 63 extends, and the sample is held by the gripping device at the tip. One sample is received from the rack 47 (placed on the tip or gripped by a chuck attached to the tip). When the reception of the sample is completed, the arm 632 contracts, the shutter device 46 operates again, and the door 461 closes the doorway 435. Before the shutter device 46 is opened, the arm 632 is in a posture in which it can extend in the direction N1 of the sample rack 47 in advance. Further, as described above, before the shutter device 46 is opened, the doors 437 and 325 are closed by the door 452 of the shutter device 45 to prevent the communication between the second loading chamber 42 and the working chamber 31 in an airtight state. Therefore, the inside of the second loading chamber 42 is evacuated.

When the shutter device 46 closes the doorway 435, the inside of the second loading chamber 42 is evacuated again, and the inside of the second loading chamber 41 is evacuated to a higher vacuum degree than the inside of the first loading chamber 41. Meanwhile, the arm 632 of the second transfer unit 63 is rotated to a position where it can extend toward the stage device 50 in the working chamber 31. On the other hand, in the stage device 50 in the working chamber 31, the Y table 52, the center line X ₀ -X ₀ of the X table 53 passes through the rotation axis O ₂ -O ₂ of the second transport unit 63, and the X axis X ₁ -. X ₁ and up to approximately match the position, moves upward in FIG. 2, Further, X table 53 is moved to a position close to the leftmost position in FIG. 2, is waiting in this state. When the second loading chamber 42 becomes substantially the same as the vacuum state of the working chamber 31, the door 452 of the shutter device 45 moves to open the doorways 437 and 325, the arm 632 extends, and the tip of the arm 632 holding the sample works. The stage device 50 in the chamber 31 is approached. Then, the sample is mounted on the mounting surface 551 of the stage device 50. When the mounting of the sample is completed, the arm 632 contracts, and the shutter device 45 closes the doorways 437 and 325.

The above has described the operation until the sample in the cassette c is conveyed to the stage device 50. However, to return the sample placed on the stage device 50 and processed to the stage device 50 to the cassette c, Performs the reverse operation. In addition, since a plurality of samples are placed on the sample rack 47, while the second transport unit 63 transports the sample between the sample rack 47 and the stage device 50, the first transport unit 61 The sample can be transported between the cassette c and the sample rack 47, and the inspection process can be efficiently performed.

Specifically, when the sample rack 47 has a sample A that has already been processed and a sample B that has not been processed, (1) first, the unprocessed sample B is moved to the stage device 50 to start processing, and ( 2) During this process, the processed sample A is moved from the stage device 50 to the sample rack 47 by the arm 632, the unprocessed sample C is also extracted from the sample rack 47 by the arm 632, and positioned by the pre-aligner 25, It moves to the sample rack 47 of the loading chamber 41. By doing so, it is possible to replace the processed sample A with the unprocessed sample C in the sample rack 47 during the processing of the sample B.

Depending on how to use such an apparatus for inspection and evaluation, a plurality of stage devices 50 may be placed in parallel and a sample rack 47 may be moved to each of the devices, so that a plurality of samples can be stored. It can also be processed simultaneously.

According to the above embodiment, the following effects can be achieved.
(A) The entire configuration of the image projection type inspection apparatus using an electron beam is obtained, and the inspection target can be processed with high throughput.
(B) Inspecting the inspection object while monitoring the dust in the mini-environment space by providing a sensor for flowing clean gas to the inspection object to prevent dust from adhering and observing the cleanliness. You can
(C) Since the loading chamber and the working chamber are integrally supported via the vibration prevention device, the inspection target can be supplied to and inspected to the stage device 50 without being affected by the external environment.

<Electro-optical device>
FIG. 3 is a diagram showing the configuration of the electro-optical device 70. FIG. 4 is a diagram for explaining the beam path in the electron optical device 70. The inspection target (sample) of the electro-optical device 70 is the sample W. The sample W is a silicon wafer, a glass mask, a semiconductor substrate, a semiconductor pattern substrate, a substrate having a metal film, or the like. The electron beam inspection apparatus according to the present embodiment detects the presence of foreign matter on the surface of the sample W made of these substrates. The foreign matter is an insulator, a conductor, a semiconductor material, a composite of these, or the like. The types of foreign matter include particles, cleaning residues (organic substances), reaction products on the surface, and the like.

As shown in FIGS. 3 and 4, the electron optical device 70 includes a primary optical system 72 that generates an electron beam and a secondary optical system that forms an enlarged image of secondary emission electrons or mirror electrons from the sample W. 74, a detector 761 that detects those electrons, and an image processing unit 763 that processes a signal from the detector 761.

The primary optical system 72 is configured to generate an electron beam and irradiate it toward the sample W. The primary optical system 72 has an electron gun 721, lenses 722 and 725, apertures 723 and 724, an E×B filter 726, lenses 727, 729 and 730, and an aperture 728. The electron gun 721 has a laser light source 7211 and a light emitting surface cathode 7212, and an electron beam is generated by the electron gun 721. The lenses 722 and 725 and the apertures 723 and 724 shape the electron beam and control the direction of the electron beam. Then, in the E×B filter 726, the electron beam is affected by the Lorentz force due to the magnetic field and the electric field. The electron beam enters the E×B filter 726 from an oblique direction, is deflected vertically downward, and goes toward the sample W. The lenses 727, 729, and 730 control the direction of the electron beam and perform appropriate deceleration to adjust the landing energy LE.

The primary optical system 72 irradiates the sample W with an electron beam. The primary optical system 72 irradiates both the precharged charging electron beam and the imaging electron beam. According to the experimental result, the difference between the landing energy LE1 of the precharge and the landing energy LE2 of the imaging electron beam is preferably 5 to 20 [eV].

In this regard, it is assumed that the precharge landing energy LE1 is applied in the negative charging region when there is a potential difference between the foreign matter on the surface 21 of the sample W and the surroundings. The charge-up voltage differs depending on the value of LE1. This is because the relative ratio of LE1 and LE2 changes (LE2 is the landing energy of the imaging electron beam as described above). When LE1 is large, the charge-up voltage is high, and as a result, a reflection point is formed at a position above the foreign matter (position closer to the detector 761). The trajectory of the mirror electrons and the transmittance change depending on the position of the reflection point. Therefore, the optimum charge-up voltage condition is determined according to the reflection point. Further, if LE1 is too low, the efficiency of mirror electron formation decreases. The difference between LE1 and LE2 is preferably 5 to 20 [eV]. The value of LE1 is preferably 0 to 40 [eV], more preferably 5 to 20 [eV].

By adjusting the electric field and magnetic field conditions of the E×B filter 726, the primary electron beam angle can be determined. For example, the conditions of the E×B filter 726 can be set so that the primary-system irradiation electron beam and the secondary-system electron beam enter the sample W substantially perpendicularly. In order to further increase the sensitivity, it is effective to tilt the incident angle of the primary electron beam with respect to the sample W, for example. A suitable tilt angle is 0.05 to 10 degrees, preferably about 0.1 to 3 degrees.

As described above, by irradiating the foreign matter with the electron beam at a predetermined angle θ, the signal from the foreign matter can be strengthened. This makes it possible to form a condition in which the trajectory of the mirror electrons does not deviate from the center of the optical axis of the secondary system, and thus the transmittance of the mirror electrons can be increased. Therefore, when the foreign matter is charged up and the mirror electrons are guided, the tilted electron beam is very advantageously used.

The sample W is present on the stage device 50, and foreign matter is present on the sample W. The primary optical system 72 irradiates the surface 21 of the sample W with an electron beam at a landing energy LE-5 to -10 [eV]. The foreign matter is charged up, and the incident electrons of the primary optical system 72 are repelled without coming into contact with the foreign matter. As a result, the mirror electrons are guided to the detector 761 by the secondary optical system 74. At this time, the secondary emission electrons are emitted from the surface 21 of the sample W in a direction spreading. Therefore, the transmittance of secondary emission electrons is a low value, for example, about 0.5 to 4.0%. On the other hand, since the directions of the mirror electrons are not scattered, the mirror electrons can achieve a high transmittance of almost 100%. Mirror electrons are formed by foreign matter. Therefore, only the signal of the foreign matter can generate high brightness (a state where the number of electrons is large). It is possible to obtain a high contrast by increasing the difference/ratio of the brightness with the surrounding secondary emission electrons.

Further, the image of the mirror electron is magnified at a magnification larger than the optical magnification as described above. The expansion rate is 5 to 50 times. Under typical conditions, the magnification is often 20-30 times. At this time, the foreign matter can be detected even if the pixel size is three times or more the foreign matter size. Therefore, it can be realized at high speed and high throughput.

For example, when the size of the foreign matter is 20 [nm] in diameter, the pixel size may be 60 [nm], 100 [nm], 500 [nm], or the like. As in this example, it is possible to image and inspect a foreign substance using a pixel size that is three times or more the size of the foreign substance. This is a remarkably superior feature for higher throughput as compared with the SEM method and the like.

The secondary optical system 74 is means for guiding the electrons reflected from the sample W to the detector 761. The secondary optical system 74 has lenses 740 and 743, an NA aperture 742, an aligner 744, and a detector 761. The electrons are reflected from the sample W and pass through the objective lens 730, the lens 729, the aperture 728, the lens 727, and the E×B filter 726 again. Then, the electrons are guided to the secondary optical system 74. In the secondary optical system 74, the electrons pass through the lens 740, the NA aperture 742, and the lens 743 to collect electrons. The electrons are conditioned by the aligner 744 and detected by the detector 761.

The NA aperture 742 has a role of defining the transmittance and aberration of the secondary system. The size and position of the NA aperture 742 are selected so that the difference between the signal from the foreign matter (mirror electron etc.) and the signal from the surrounding (normal part) becomes large. Alternatively, the size and position of the NA aperture 742 are selected so that the ratio of the signal from the foreign matter to the surrounding signal is large. As a result, the S/N can be increased.

For example, it is assumed that the NA aperture 742 can be selected in the range of φ50 to φ3000 [μm]. It is assumed that the detected electrons are a mixture of mirror electrons and secondary emission electrons. In such a situation, it is advantageous to select the aperture size in order to improve the S/N of the mirror electron image. In this case, it is preferable to select the size of the NA aperture 742 so as to reduce the transmittance of secondary emission electrons and maintain the transmittance of mirror electrons.

For example, when the incident angle of the primary electron beam is 3°, the reflection angle of the mirror electron is approximately 3°. In this case, it is preferable to select a size of the NA aperture 742 that allows the trajectories of mirror electrons to pass. For example, a suitable size is φ250 [μm]. Since the NA aperture (diameter φ250 [μm]) is limited, the transmittance of secondary emission electrons is reduced. Therefore, the S/N of the mirror electron image can be improved. For example, when the aperture diameter is changed from φ2000 to φ250 [μm], the background gradation (noise level) can be reduced to 1/2 or less.

The foreign matter may be composed of any kind of material, for example, semiconductor, insulator, metal, etc., or may be mixed. Since a natural oxide film or the like is formed on the surface of the foreign matter, the foreign matter will be covered with the insulating material. Therefore, even if the foreign material is a metal, charge-up occurs in the oxide film. This charge-up is preferably used in this example.

The detector 761 is means for detecting the electrons guided by the secondary optical system 74. The detector 761 includes a two-dimensional sensor 7611. The two-dimensional sensor 7611 has a plurality of pixels arranged in a two-dimensional direction.

An EB (Electron Bombardment) semiconductor sensor can be applied to the two-dimensional sensor 7611. For example, an EB-CMOS sensor may be applied to the two-dimensional sensor 7611. The EB-CMOS sensor can directly inject an electron beam (secondary beam) into it. Therefore, it is possible to obtain high MTF (Modulation Transfer Function) and contrast without deterioration of resolution due to the photoelectric conversion mechanism and the light transmission mechanism. In the past, detection of small foreign matter was unstable. On the other hand, when the EB-CMOS is used, it is possible to increase the S/N of a weak signal of a small foreign matter. Therefore, higher sensitivity can be obtained. The improvement in S/N reaches 1.2 to 2 times. An EB-CCD sensor or an EB-TDI sensor may be used as the two-dimensional sensor.

The number of pixels of the two-dimensional sensor 7611 can be set to 2k×2k to 10k×10k. The data rate of the two-dimensional sensor 7611 can be 10 GPPS or less. Further, the pixel size of the two-dimensional sensor 7611 can be set to 1 to 15 μm.

The image processing unit 763 performs image processing such as noise reduction processing, integration processing, and sub-pixel alignment on the secondary beam image obtained by the detector 761. The processing speed of the image processing unit 763 can be 10 GPPS or less.

The electro-optical device 70 will be further described. The sample W is installed on a stage device 50 that is movable in x, y, z, and θ directions. Highly accurate alignment is performed by the stage device 50 and the optical microscope 871. Then, the mapping projection optical system uses the electron beam to perform the foreign matter inspection and the pattern defect inspection of the sample W. Here, the potential of the surface 21 of the sample W is important. In order to measure the surface potential, a surface potential measuring device capable of measuring in vacuum is attached to the main chamber 160. This surface potential measuring device measures a two-dimensional surface potential distribution on the sample W. Focus control is performed in the secondary optical system 74 that forms an electronic image based on the measurement result. A focus map of the two-dimensional position of the sample W is produced based on the potential distribution. Using this map, the inspection is performed while changing and controlling the focus during the inspection. As a result, the blurring and distortion of the image due to the change in the surface circular potential depending on the location can be reduced, and accurate and stable image acquisition and inspection can be performed.

In the example shown in FIG. 4, the secondary optical system 74 is configured to be able to measure the detection current of the electrons incident on the NA aperture 742, and further to be able to install the EB-CCD 745 at the position of the NA aperture 742. There is. Such an arrangement is very advantageous and efficient. The NA aperture 742 and the EB-CCD 745 are installed in an integral holding member 746 having openings 747 and 748. The secondary optical system 74 is provided with a mechanism capable of independently absorbing the current of the NA aperture 742 and acquiring the image of the EB-CCD 745, respectively. In order to realize this mechanism, the NA aperture 742 and the EB-CCD 745 are installed on the X, Y stage 746 which operates in vacuum. Therefore, position control and positioning of the NA aperture 742 and the EB-CCD 745 are possible. Since the stage 746 is provided with the openings 747 and 748, the mirror electrons and the secondary emission electrons can pass through the NA aperture 742 or the EB-CCD 745.

The operation of the secondary optical system 74 having such a configuration will be described. First, the EB-CCD 745 detects the spot shape of the secondary electron beam and its center position. Then, the voltage of the stigmator, the lenses 740 and 743, and the aligner 744 is adjusted so that the spot shape is circular and minimizes. Regarding this point, conventionally, it was not possible to directly adjust the spot shape and astigmatism at the position of the NA aperture 742. Such a direct adjustment is possible in the present embodiment, and astigmatism can be corrected with high accuracy.

Further, the center position of the beam spot can be easily detected. Therefore, the position of the NA aperture 742 can be adjusted so that the hole center of the NA aperture 742 is located at the beam spot position. In this regard, conventionally, the position of the NA aperture 742 could not be directly adjusted. In the present embodiment, it is possible to directly adjust the position of the NA aperture 742. As a result, the NA aperture 742 can be positioned with high accuracy, the aberration of the electronic image is reduced, and the uniformity is improved. Then, the uniformity of the transmittance is improved, and it becomes possible to obtain an electronic image with high resolution and uniform gradation.

Further, in the inspection of foreign matter, it is important to efficiently acquire the mirror signal from the foreign matter. The position of the NA aperture 742 is very important because it defines the transmittance and aberration of the signal. The secondary emission electrons are emitted from the surface 21 of the sample W in a wide angle range according to the cosine law, and reach a uniformly wide region (for example, φ3 [mm]) at the NA position. Therefore, the secondary emission electrons are insensitive to the position of the NA aperture 742. On the other hand, in the case of mirror electrons, the angle of reflection on the surface 21 of the sample W is about the same as the angle of incidence of the primary electron beam. Therefore, the mirror electrons show a small spread and reach the NA aperture 742 with a small beam diameter. For example, the spread area of the mirror electrons is 1/20 or less of the spread area of the secondary emission electrons. Therefore, the mirror electrons are very sensitive to the position of NA aperture 742. The spread region of the mirror electrons at the NA position is usually a region of φ10 to 100 μm. Therefore, it is very advantageous to find the position where the mirror electron intensity is the highest and place the center position of the NA aperture 742 at the found position.

In order to realize the installation of the NA aperture 742 at such an appropriate position, in a preferred embodiment, the NA aperture 742 is arranged in the electron column vacuum with an accuracy of about 1 [μm] in the x and y directions. Be moved to. The signal strength is measured while moving the NA aperture 742. Then, the position having the highest signal strength is obtained, and the center of the NA aperture 742 is set at the obtained coordinate position.

The EB-CCD 745 is very advantageously used for measuring the signal strength. This is because the two-dimensional information of the beam can be known and the number of electrons incident on the detector 761 can be obtained, which makes it possible to quantitatively evaluate the signal intensity.

Alternatively, the aperture arrangement may be set so that the position of the NA aperture 742 and the position of the detection surface of the detector 761 realize a conjugate relationship, and the lens 743 between the NA aperture 742 and the detector 761 may be provided. Conditions may be set. This configuration is also very advantageous. As a result, the image of the beam at the position of the NA aperture 742 is formed on the detection surface of the detector 761. Therefore, the beam profile at the position of the NA aperture 742 can be observed using the detector 761.

The NA size (aperture diameter) of the NA aperture 742 is also important. Since the signal area of mirror electrons is small as described above, the effective NA size is about 10 to 200 [μm]. Further, the NA size is preferably +10 to 100% larger than the beam diameter.

In this regard, the electron image is formed by mirror electrons and secondary emission electrons. By setting the above aperture size, it is possible to further increase the ratio of mirror electrons. Thereby, the contrast of the mirror electrons can be increased, that is, the contrast of the foreign matter can be increased.

More specifically, when the aperture hole is made smaller, the secondary emission electrons decrease in inverse proportion to the aperture area. Therefore, the gradation of the normal part becomes small. However, the mirror signal does not change and the gradation of the foreign matter does not change. Therefore, the contrast of the foreign matter can be increased and the higher S/N can be obtained by the amount that the surrounding gradation is reduced.

Further, the aperture or the like may be configured so that the position of the aperture can be adjusted not only in the x and y directions but also in the z axis direction. This configuration is also advantageous. The aperture is preferably installed at a position where the mirror electrons are most focused. This makes it possible to very effectively reduce the aberration of the mirror electrons and the secondary emission electrons. Therefore, it becomes possible to obtain a higher S/N.

<Electronic image tracking method>
The electro-optical device 70 will be further described. As shown in FIG. 3, the primary optical system 72 includes a first high-voltage reference tube 701 provided along the path of the primary beam so as to surround the path. In the primary optical system 72, the emission current can be 10 μA to 10 mA, the transmittance can be 20 to 50%, the spot size can be φ1 to φ100 μm, and the size of the irradiation area can be set. (Illumination size) can be φ10 to φ1000 μm, and the optical system magnification can be 1/1 to 1/10.

A high-speed deflector 749 is provided on the way of the secondary beam in the secondary optical system 74. Specifically, the high speed deflector 749 is provided closer to the detector 761 than the NA aperture 742. The high-speed deflector 749 is composed of multipoles (12 poles in this embodiment), generates an octupole field and a hexapole field, and deflects the secondary beam in an arbitrary direction. The deflection direction (deflection amount) is controlled by the control device 2 that functions as the deflection control device 90. The configuration of the high speed deflector 749 will be described later. The multipole element used for the high-speed deflector 749 may be a multipole element having eight poles, four poles, or the like. Further, the multipole element may generate only a hexapole field or may generate only an octupole field.

In the secondary optical system 74, the magnification can be 10 to 10,000 times, the size of the sample captured by one pixel of the two-dimensional sensor 7611 can be 3 to 100 nm (3 to 100 nmPx), and the NA aperture can be set. The transmittance of 742 can be 10 to 50%, and the defect sensitivity can be 1 to 50 nm.

The control device 2 functions as a deflection control device that controls the deflection direction of the high-speed deflector 749 as described above, and also controls the other operations of the electron optical device 70. The stage controls the stage device 50. It also functions as a control device, a transportation control device that controls the configuration for transporting the sample W, an imaging control device that controls the imaging of the two-dimensional sensor 7611, and the like. Particularly, in the present embodiment, the sample W moves at a constant speed by the stage device 50 during the inspection, but the control device 2 controls the stage device 50 to control the movement of the sample W. Note that in FIG. 3, a set 56 is attached to the set of the fixed table 51, the Y table 52, the X table 53, and the rotary table 54 in FIGS. 1 and 2.

FIG. 5A is a diagram for explaining the operation of the high-speed deflector 749 that deflects the secondary beam so that the secondary beam follows the movement of the sample W. As shown in FIG. 5A, when the sample W is continuously moving to the right, the high-speed deflector 749 causes the secondary beam from the position A1 on the sample W to be transmitted to the two-dimensional sensor 7611. The secondary beam is deflected so as to form a next beam image, and while the sample W is moving to the right, the secondary beam image of the part of the sample W at the position A1 is moved along with the movement. The deflection direction of the secondary beam is changed so that an image is always formed on the two-dimensional sensor 7611. That is, the high-speed deflector 749 moves the absolute position in the space where the secondary beam image is formed on the two-dimensional sensor 7611, following the movement of the sample W. The deflection cycle of the high-speed deflector 749 can be set to 100 kHz to 100 MHz.

Due to such a change (following) of the deflection direction of the secondary beam, the two-dimensional sensor 7611 always shows the first position until the portion of the sample W located at the position A1 reaches the position A2 by the movement. The secondary beam from the portion of the sample W at the position A1 is incident, and during this period (one cycle), the two-dimensional sensor 7611 is to capture a secondary beam image of the same region of the sample W. Become. When the portion of the sample W at the position A1 reaches the position A2, the high speed deflector 749 returns the visual field area to the position A1 again. As a result, a secondary beam image of a new part of the sample W can be captured. After the field of view of the two-dimensional sensor 7611 returns from the position A2 to the position A1, the deflection direction of the secondary beam is similarly changed by the high-speed deflector 749 to follow the movement of the sample W, The visual field area of the two-dimensional sensor 7611 moves from the position A1 toward the position A2.

As described above, the field of view of the two-dimensional sensor 7611 reciprocates between the position A1 and the position A2, but the field of view must always be irradiated with the primary beam. In order to realize this, as shown in FIG. 5B, the primary beam irradiation area EF is set so that the primary beam irradiation area EF covers the visual field area VF1 at the position A1 and the visual field area VF2 at the position A2. It suffices to irradiate W, that is, the irradiation area EF has a size of two visual field areas. In this case, the irradiation area EF of the primary beam can always be fixed at this position.

Moreover, as shown in FIG. 5C, the irradiation area of the primary beam may be moved from the irradiation area EF1 at the position A1 to the irradiation area EF2 at the position A2 by following the movement of the sample W and the visual field area. The irradiation area of the primary beam at this time can be changed by changing the deflection direction of the primary beam by the E×B filter 726.

In the secondary optical system 74, a second high-pressure reference tube 702, a third high-pressure reference tube 703, and a fourth high-voltage reference tube 704 are respectively arranged in order from the side closer to the sample W which is the sample, and the paths of the secondary beams are provided. It is provided so as to enclose this route along. The second high-voltage reference tube 702 is provided between the sample W and an E×B filter 726 as a beam separator, and the third high-voltage reference tube 703 is closer to the two-dimensional sensor 7611 than the E×B filter 726. The fourth high pressure reference tube 704 is provided between the third high pressure reference tube 703 and the detector 761. The NA aperture 742 is provided inside the third high-voltage reference tube 703, and the high-speed deflector 749 is provided inside the fourth high-voltage reference tube 704.

The first high-voltage reference tube 701, the second high-voltage reference tube 702, the third high-voltage reference tube 703, and the fourth high-voltage reference tube 704 have a first voltage V1, a second voltage V2, and a third voltage V2, respectively. The voltage V3 and the fourth voltage V4 are applied. In the embodiment, when the detection voltage of the detector 761 is V5, these voltages have a relationship of V1=V2=V3, V3>V4, V4=V5. That is, in order to deflect the secondary beam at high speed by the high-speed deflector 749, the voltage V4 applied to the fourth high-voltage reference tube 704 is made smaller than the third voltage V3 to reduce the electron energy of the secondary beam. ing. Here, the third voltage V3 is, for example, 40 kV, and the fourth voltage V4 is, for example, 5 kV.

As described above, the secondary beam is deflected by the high-speed deflector 749. However, if the electron energy of the secondary beam at that time is larger than 10 kV, for example, the deflection voltage in the high-speed deflector 749 needs to be increased. It becomes difficult to deflect at high speed. Therefore, the fourth high-voltage reference tube 704 is provided separately from the third high-voltage reference tube 704, the voltage applied to the fourth high-voltage reference tube 704 is reduced to, for example, about 5 kV, and the high-voltage deflector 749 is incident. It is necessary to reduce the electron energy of the secondary beam. On the other hand, due to such a rapid change from the third voltage to the fourth voltage, a curvature aberration occurs in the secondary beam, and an image of the secondary beam (secondary beam image) formed on the detector 761 is formed. Distortion will occur.

Therefore, in the present embodiment, an intermediate electrode (relaxation electrode) 750 is provided between the third high-voltage reference tube 703 and the fourth high-voltage reference tube 704, and the intermediate electrode (relaxation electrode) 750 is connected to the third voltage V3 from the third voltage V3. An intermediate voltage that is large and smaller than the fourth voltage V4 is applied. As a result, it is possible to suppress the occurrence of the above-mentioned bending aberration, and thus suppress the distortion of the secondary beam image.

FIG. 6 is a diagram showing the configuration of a combination unit of a high-speed deflector, an imaging lens and an intermediate electrode. The intermediate electrode 750 is provided between the third high voltage reference tube 703 to which a third voltage of 40 kV is applied and the fourth high voltage reference tube 704 to which a fourth voltage of 5 kV is applied, for example. Are arranged without contacting the high voltage reference tube 703 and the fourth high voltage reference tube 704, and an intermediate voltage of, for example, 10 kV to 13 kV is applied.

The high-speed deflector 749 uses the 12-pole structure as described above in order to deflect the secondary beam with high accuracy. The 12 poles are arranged at equal angular intervals, and a voltage can be individually applied by the control device 2. The voltage accuracy of the high-speed deflector 749 is improved by using the power supply and the amplifier for high-speed deflection superimposed on the fourth voltage V4 by the fourth high-voltage reference tube.

The imaging lens 741 adopts a double magnetic field lens system. The secondary beam image can be rotated by reversing the magnetic flux directions of the upper coil 7411 and the lower coil 7412. Further, the magnetic field lens coils 7411 and 7412 are of a two-wiring system, which allows the temperature to be stabilized with a constant power. Since the image is formed in the state where the electron energy is changed from the third voltage V3 by the third high voltage reference tube 703 to the fourth voltage V4 by the fourth high voltage reference tube 704, the image forming lens is formed near the potential change. 741 is arranged, and an intermediate electrode (electric field relaxation electrode) 750 for relaxing the influence of the lens effect due to the electric field change is arranged in the preceding stage. Accordingly, it is possible to suppress the distortion of the secondary beam image due to the rapid potential change.

The image of the secondary beam image becomes larger as it approaches the detector 761 that performs magnified image formation by the imaging lens 741. Therefore, in order to perform high-speed deflection at a position close to the imaging lens 741 where the secondary beam image is small, a high-speed deflector 749 is installed near the imaging lens. That is, when the secondary beam image becomes large, the deflection voltage required to deflect the secondary beam becomes large, and the deflection sensitivity decreases, so that high-speed deflection becomes difficult and the above-described distortion correction accuracy decreases, which will be described later. The vibration correction accuracy also decreases. Therefore, it is desirable that the intermediate electrode 750, the imaging lens 741, and the high-speed deflector 749 be arranged as close as possible in this order in the traveling direction of the secondary beam, and it is desirable that they are configured as a unit in which they are integrated. ..

The high-speed deflector 749 performs not only the deflection for following the movement of the sample W, but also the distortion correction of the secondary beam image as described above and the vibration correction described later. These functions are controlled by the control device 2. It is realized by individually applying voltage to the poles.

Returning to FIG. 3, the vibration correction will be described. As described above, the sample W continuously moves at a constant speed by the stage device 50, and the high-speed deflector 749 changes the deflection direction of the secondary beam so that the visual field area moves following the movement of the sample W. Although changed, at this time, unintended vibration may be applied to the movement of the sample W by the stage device 50. As described above, the two-dimensional sensor 7611 always captures the secondary beam image of the same portion of the sample W during one cycle of movement of the visual field region. The contamination that the secondary beam from the other part of the sample W is incident on each pixel of the two-dimensional sensor 7611 occurs.

As described above, the stage device 50 operates the plurality of tables by using the servo motor, the encoder, and various sensors (not shown) to move the sample W held in the holder 55 in the X direction and the Y direction. And in the Z direction (vertical direction in FIG. 1) and in the direction around the axis perpendicular to the support surface of the sample (θ direction) with high accuracy. As a configuration for this, a mirror 571 is fixed to the holder 55, and a laser beam is emitted to the mirror 571 on the inner wall of the main housing 30, and a laser beam reflected and returned from the mirror 571 is incident on the laser interferometer. 572 is provided.

In the inspection device 1 according to the present embodiment, the vibration is corrected by using the mirror 571 and the laser interferometer 572 fixed to the holder 55 as the vibration detecting means. The unintended vibration of the sample W detected by the laser interferometer 572 is input to the control device 2. The control device 2 is instructed to change the deflection direction of the secondary beam by the high-speed deflector 749 when the sample W moves without causing unintended vibration. The deflection direction of the secondary beam by the high-speed deflector 749 is determined in consideration of not only the movement but also the unintended vibration of the sample W detected by the laser interferometer 572, and the high-speed deflector 749 is controlled. Note that the control device 2 may not be instructed to change the deflection direction of the secondary beam by the high-speed deflector 749 when the sample W moves without causing unintended vibration. In this case, the control device 2 detects the position of the sample W (the holder 55 holding it) that also includes unintended vibration of the sample W detected by the laser interferometer 572, and based on this position, the secondary beam by the high-speed deflector 749. The high-speed deflector 749 may be controlled by determining the deflection direction of the.

As described above, in the inspection apparatus 1 including the electron optical device 70 of the present embodiment, while the sample W is moving, the secondary beam of the same portion of the sample W is synchronized with the movement of the sample W. A high-speed deflector 749 that deflects the secondary beam so that it is incident on the same portion of the two-dimensional sensor 7611 includes a distortion corrector that corrects the distortion of the secondary beam image and a contamination caused by unintended vibration of the sample W. Since it also functions as a vibration compensator, the two-dimensional sensor 7611 can obtain a highly accurate secondary beam image.

The first voltage V1, the second voltage V2, the third voltage V3, the fourth voltage V4, and the detection voltage V5 are not limited to the above examples, and for example, V1<V2, V2=V3, V3>. The relationship of V4 and V4=V5 may be satisfied, that is, the first voltage V1 may be smaller than the second voltage V2 and the third voltage V3. By reducing the voltage V1 applied to the first high-voltage reference tube 701 in the primary optical system 72, the risk of discharge in the first high-voltage reference tube 701 can be reduced. That is, since the primary optical system has the aperture 723 in the first high-voltage reference tube 701 and absorbs 50% or more of the emission from the electron gun 721 in this aperture 723, the amount of leakage current is large and the leakage current is large. The fluctuation of the amount of current is also large. On the other hand, by reducing the first voltage V1 applied to the first high-voltage reference tube 701, the risk of discharge can be reduced or eliminated.

Further, in the inspection device 1 described above, a voltage control device that adjusts the fourth voltage V4 applied to the fourth high-voltage reference tube 704 may be provided to make the fourth voltage V4 variable. At this time, the fourth voltage V4 may be adjustable in the range of ±1 kV, for example. By adjusting the fourth voltage V4 in this way, the electron energy (incident energy) of the secondary beam incident on the detector 761 can be adjusted. Thereby, the gain of the two-dimensional sensor 7611 (that is, the brightness of the secondary beam image) can be adjusted.
<Software re-inspection simulation>

Returning to FIG. 3, as described above, the electron optical device 70 irradiates the sample W, which is the sample held by the stage device 50, with the primary beam, which is a surface beam, and thereby the secondary beam generated from the sample W. The beam is directed to detector 761. The detector 761 captures the secondary beam by a two-dimensional sensor (not shown), generates an image of the secondary beam image, and outputs the image to the image processing unit 763.

The image processing unit 763 functions as an inspection processing device for an image processing filter (mean value (Mean) filter, Gaussian filter, median value filter, etc.) for the secondary beam image input from the detector 761. ) Is used to perform shading correction, and then inspection is performed by comparison processing such as cell-cell comparison, die-die comparison, and die-database comparison. Specifically, the image processing unit 763 detects a portion where the difference exceeds a predetermined threshold as a defect in the comparison processing, and generates a defect image.

The image processing unit 763 performs inspection according to the set inspection condition parameters. This inspection condition parameter includes a cell cycle in the case of cell-cell comparison, an edge allowable value in the case of die-die comparison, a threshold value for detecting a defect, an image processing filter, a shading correction value, a parameter of die-database comparison. , Includes defect classification information that is not desired to be detected. It should be noted that this defect classification information that is not desired to be detected is obtained as a result of classification by performing imaging with an SEM after the inspection.

By the way, in order to surely detect a true defect and not to detect a non-defective part (pseudo-defect) in an inspection device that inspects a defect generated in a sample, an inspection condition such as a detection threshold is set. It is necessary to repeat the inspection many times while changing it to determine the optimum inspection conditions.

However, when the inspection is repeated, there is a problem that it takes time to optimize the inspection conditions. Further, by repeating the inspection, problems such as damage accumulated on the sample and contamination of the sample occur.

Therefore, in order to avoid damage to the sample and contamination of the sample and determine the inspection condition with a small number of inspections, the inspection device 1 of the present embodiment is provided with the simulation device 200. The image processing unit 763 outputs the defect image and the unprocessed image (secondary beam image) used to generate the defect image to the simulation device 200.

The simulation apparatus 200 includes a simulation processing unit 201, an input unit 202, and a monitor 203. For example, a general-purpose computer including an input unit, a monitor, an arithmetic processing unit, a memory, a storage device, an input/output port, and the like. Composed by. The simulation processing unit 201 is realized by executing the inspection result review program of the present embodiment by the arithmetic processing unit. This inspection result review program may be provided to the simulation apparatus 200 via a network, or may be provided to the simulation apparatus 200 by the simulation apparatus 200 reading the search result review program stored in the storage medium. The search result review program provided in this manner is stored in the storage device of the simulation device 200, read from the storage device, and executed to configure the simulation processing unit 201.

The simulation processing unit 201 performs re-inspection simulation on the secondary beam image input from the inspection apparatus 100 while changing the inspection condition parameters and determines the optimum inspection condition parameters. The inspection condition parameters changed by the simulation processing unit 201 for re-inspection simulation include a cell cycle in the case of cell-cell comparison, an edge allowable value in the case of die-die comparison, a threshold value for detecting a defect, and image processing. It includes a filter, a shading correction value, a parameter for die-database comparison, and classification information of defects that are not desired to be detected.

FIG. 7 is a flowchart showing the operation of the simulation device 200. First, the electro-optical device 70 performs an inspection, and the image processing unit 763 outputs the inspection result to the simulation device 200 (step S331). At this time, the image processing unit 763 outputs the inspection result, the unprocessed image (secondary beam image) used to obtain the inspection result, and the defect classification information that is not desired to be detected to the simulation device 200. In the simulation device 200, the simulation processing unit 201 reads the inspection result, generates a defect image, and displays it on the monitor 203 (step S332).

Next, the simulation processing unit 201 changes the inspection condition and executes the re-inspection simulation (step S333), and outputs the re-inspection result obtained thereby (step S334). In this re-inspection simulation, similar to the inspection in the electron optical device 70, the defects in the defect classification information that should not be detected are not detected. The simulation processing unit 201 reads the re-inspection result obtained in step S334, generates a defect image, and outputs it to the monitor 203 (step S335).

Next, by evaluating the defect image obtained by this re-inspection, it is determined whether the inspection conditions are optimum (step S336). If the inspection conditions are not optimum (NO in step S336), the process proceeds to step S333. Returning to this, the inspection condition is changed and the re-inspection simulation is executed (step S333). When the inspection conditions are optimized by repeating the re-inspection simulation while changing the inspection condition parameters in this way (YES in step S336), the optimized inspection conditions are adopted by the electron optical device 70. (Step S337), and the process ends. The simulation processing unit 201 may determine whether or not the search condition is optimum, for example, based on the input from the input unit 202.

As described above, according to the present embodiment, after the actual inspection is performed in the electron optical device 70, the inspection is performed using the defect image and the unprocessed image output from the electron optical device 70 in the simulation device 200. Since the re-inspection simulation is performed by the inspection result review software while changing the conditions, the inspection conditions can be optimized with a small number of inspections, and the time for optimizing the inspection conditions can be shortened. Further, since it is not necessary to repeat the actual inspection by the electro-optical device 70, damage to the sample can be reduced and contamination of the sample can be reduced.

<Review of defects using the same stage device and electro-optical device as in defect inspection>
In the present embodiment, the control device 2 operates the stage device 50 and the electro-optical device 70 to perform a defect inspection, and based on the information regarding the defect output from the image processing unit 763, the stage device 50 and the electro-optical device. 70 is operated to further perform a detailed inspection (review) of the defect.

More specifically, as shown in FIG. 5, the controller 2 first synchronizes the movement of the sample W by the continuous movement of the stage device 50 and the deflection of the trajectory of the secondary beam by the high-speed deflector 749. By controlling, the image of the secondary beam is stopped on the two-dimensional sensor 7611, and the image of the same detection region of the wafer W is projected on the same portion of the two-dimensional sensor 7611 during the synchronization period. In this way, the defect inspection of the sample W is performed. The two-dimensional sensor 7611 outputs the imaging result as an image signal. As shown in FIG. 8, when the sample W includes the inspection die D1 and the reference die D2, the image signal output from the two-dimensional sensor 7611 includes the image information of the inspection die D1 (first inspection image signal) and the reference die D2. Image information (second inspection image signal) is included.

The image processing unit 763 performs image processing on the image signal output by the two-dimensional sensor 7611 and outputs information regarding the defect. Specifically, for example, the image processing unit 763 compares the image information (first image signal) of the inspection die D1 with the image information (second image signal) of the reference die D2, and the difference is a predetermined threshold value. The part exceeding the above is detected as a defect, and the coordinates (position) of the defective portion in the inspection die D1 and the reference die D2 and the patch image are stored in the memory of the control device 2.

Next, the control device 2 sets the magnification of the secondary optical system 74 to a higher magnification than that at the time of defect inspection. For example, the control device 2 sets the magnification at the time of review to 1100 to 1500 times, while the magnification at the time of defect inspection is 900 times. The reason why the magnification of the secondary optical system 74 can be set high is as follows. That is, since it is necessary to image the sample W at a high speed during the inspection, there is a possibility that a sufficient number of electrons/px cannot be secured if the magnification is increased. Therefore, it is necessary to suppress the magnification of the secondary optical system 74 to a value that makes the inspection speed a realistic condition. On the other hand, at the time of review, since the number of imaged portions is smaller than that at the time of inspection, it is sufficient that the image pickup for each defect can be performed within several seconds to 10 seconds including the movement. Therefore, it is possible to secure a sufficient number of electrons/px even at a high magnification, whereby a good image can be acquired.

The control device 2 may set the number of effective pixels of the two-dimensional sensor 7611 to be larger than that in the defect inspection. In this case, the defective portion can be imaged with higher resolution.

Next, the control device 2 operates the stage device 50 based on the coordinate (position) information of the one defect in the inspection die D1 stored in the memory, so that the primary beam is applied to the region including the one defect in the inspection die D1. The sample W is moved to a position where the irradiation is performed, and the operation of the stage device 50 is stopped there. Then, the sample W is irradiated with a primary beam which is a surface beam. At this time, the control device 2 stops the operation of the stage device 50 and at the same time maintains the deflection direction and the deflection amount by the high-speed deflector 749 to stop the image of the secondary beam on the two-dimensional sensor 7611. , An image of an area including one defect of the inspection die D1 is projected on the same portion of the two-dimensional sensor 7611. The two-dimensional sensor 7611 outputs the imaging result as an image signal (first review image signal).

Next, the control device 2 operates the stage device 50 based on the coordinate (position) information of one defect in the reference die D2 stored in the memory, so that the primary beam is applied to an area of the reference die D2 including the one defect. The sample W is moved to a position where the irradiation is performed, and the operation of the stage device 50 is stopped there. Then, the sample W is irradiated with a primary beam which is a surface beam. At this time, the control device 2 stops the operation of the stage device 50 and at the same time maintains the deflection direction and the deflection amount by the high-speed deflector 749 to stop the image of the secondary beam on the two-dimensional sensor 7611. , An image of a region including one defect of the reference die D2 is projected on the same portion of the two-dimensional sensor 7611. The two-dimensional sensor 7611 outputs the imaging result as an image signal (second review image signal).

The control device 2 controls the operations of the stage device 50 and the electro-optical device 70, and repeatedly obtains the review image by such a step-and-repeat operation for each defective portion detected during the defect inspection. The inspection die D1 and the reference die D2 may be alternately imaged in order for each defective portion, or after the defective portion of one of the inspection die D1 and the reference die D2 is sequentially imaged. The defective portion of the other die may be imaged in order.

In the present embodiment, the same stage device 50 and electron optical device 70 used for defect inspection are used to review defects, so that realignment of the sample W is unnecessary and high coordinate position accuracy can be realized. .. In addition, since the two-dimensional sensor 7611 is used for imaging at the time of review, the review can be performed at a higher speed than in the case of using a scanning electron microscope (SEM).

Further, at the time of review, the movement of the stage device 50 is stopped for each defective portion and imaging is performed by the detector 761, so that the secondary beam is deflected on the two-dimensional sensor 7611 due to the deflection of the secondary beam and the vibration of the stage difference 50. It is possible to reduce the blurring of the image of. Therefore, it is possible to obtain a clearer image of the defective portion.

Next, the image processing unit 763 compares the image information of the inspection die D1 (first review image signal) with the image information of the reference die D2 (second review image signal) for each defective portion, and the image at the defective portion is compared. It is determined whether or not the signal difference exceeds a predetermined threshold. If it exceeds a predetermined threshold value, it is determined that the defect is a true defect, and if it does not exceed the predetermined threshold value, it is determined that the defect is a false defect. When it is determined that the defect is a true defect, the image information (first inspection image signal) at the time of defect inspection of the inspection die D1 is compared with the image information (first review image signal) at the time of review, and the reference die By comparing the image information (second inspection image signal) at the time of defect inspection of D2 and the image information at the time of review (second review image signal), a true defect exists in either the inspection die D1 or the reference die D2. And the die where the true defect exists are identified. This determination may be made by the operator or automatically by the image processing program. When the operator performs it, the first image information and the second image information are displayed on the monitor. On the other hand, in the case where the image processing program automatically performs, the one in which the abnormal brightness, the shape deformation, and the like of the corresponding portion are larger than the surrounding area is determined as the defective portion. There are various methods for this determination, and different algorithms can be used in some cases, or a plurality of algorithms can be used in combination.

For each defect location detected during defect inspection, the control device 2 is either a true defect or a false defect, and if it is a true defect, it is in either the inspection die D1 or the reference die D2. Whether or not the classification information is stored in the memory of the control device 2. When the defect is a true defect, the color (black/white gradation) or size of the defect may be measured by the image processing unit 763 and stored in the memory of the control device 2 as classification information.

By the way, conventionally, as a procedure for inspecting a defect in a circuit pattern of an exposed wafer or the like, first, coordinate information (position) at which the defect exists is detected by a defect inspection apparatus of a low magnification optical system, and the defect is detected. For more detailed inspection, the inspection sample (wafer) itself having a defect is transferred to another device called a review station equipped with a scanning electron microscope (SEM) or a high-resolution optical microscope, and a human being The defect candidate points were observed and visually judged.

In such a conventional procedure, the inspection sample must be transported from the defect inspection apparatus to the review station in order to examine the defect in more detail, and thus it is necessary to perform alignment for accurately displaying the position of the defect. However, there is a problem that the work is complicated and takes time.

On the other hand, according to the present embodiment, since the defect is reviewed using the same stage device 50 and the electro-optical device 70 as in the defect inspection, the realignment of the sample W is unnecessary, and high coordinate position accuracy is realized. it can. Further, since imaging is performed using the two-dimensional sensor 7611, the review can be performed at a higher speed than in the case where a scanning electron microscope (SEM) is used.

Further, according to the present embodiment, the image pickup by the detector 761 is performed by setting the magnification of the secondary optical system 74 to be higher than that in the defect inspection at the time of review, so that the defect portion can be imaged at higher resolution. ..

Further, according to the present embodiment, at the time of review, the movement of the stage device 50 is stopped for each defective portion and the image is picked up by the detector 761. The blurring of the image of the secondary beam on the 7611 can be reduced. This makes it possible to obtain a clearer image of the defective portion.

1: Inspection device, 2: Control device, 30: Main housing, 50: Stage device, 55: Holder, 571: Mirror, 572: Laser interferometer, 70: Electro-optical device, 761: Detector, 7611: Two-dimensional sensor , 763: image processing unit, 72: primary optical system, 74: secondary optical system, 7211: laser light source, 7212: light emitting surface cathode, 722: lens, 701: first high-voltage reference tube, 702: second High-voltage reference tube, 703: third high-voltage reference tube, 704: fourth high-voltage reference tube, 749: high-speed deflector, 742: NA aperture, 726: E×B filter, 750: intermediate electrode, 90: deflection control device

Claims (3)

An inspection device for inspecting a sample,
A stage device that mounts a sample and moves continuously,
An electro-optical device,
A controller for controlling the operations of the stage device and the electro-optical device,
The electro-optical device,
A primary optical system for irradiating the sample on the stage device with a primary beam;
A detector including a two-dimensional sensor that generates an image of a secondary beam generated from the sample by irradiating the sample with the primary beam,
A secondary optical system that guides the secondary beam to the two-dimensional sensor,
The secondary optical system synchronizes with the movement of the stage device, and while the sample is being moved by the movement of the stage device, a secondary beam generated from the same part of the sample is emitted from the two-dimensional sensor. A deflector for deflecting the secondary beam by generating a superposed electric field by a multipole so that it is incident on the same portion,
The two-dimensional sensor is an EB (Electron Bombardment) semiconductor sensor that directly detects the electrons of the secondary beam without converting the electrons into light and outputs an image signal.
Said primary optical system, have both line irradiation of the charged electron beam and imaging the electron beam of the pre-charge,
The two-dimensional sensor is any one of EB-CMOS, EB-CCD and EB-TDI,
The electro-optical device further includes an image processing unit that performs image processing on the image signal output by the two-dimensional sensor and outputs information regarding a defect,
The control device operates the stage device and the electro-optical device to perform a defect inspection, and also operates the stage and the electro-optical device based on information about the defect output from the image processing unit to review the defect. And then
The inspection apparatus is characterized in that, at the time of review, the control apparatus stops the movement of the stage apparatus for each defective portion and performs imaging by the detector . The primary optical system has a first high-voltage reference tube provided so as to surround the path of the primary beam, and the secondary optical system has a path of the secondary beam. The inspection device according to claim 1, further comprising a second high-pressure reference tube provided so as to surround this path. The inspection apparatus according to claim 1 or 2 , wherein the control device performs imaging by the detector by setting a magnification of the secondary optical system higher during a review than during a defect inspection.