JP6752851B2 - Manufacturing methods for cooling units, substrate processing equipment, and semiconductor equipment - Google Patents

Description

The present invention relates to a cooling unit, a heat insulating structure, a substrate processing device, and a method for manufacturing a semiconductor device.

It is known that there is a semiconductor manufacturing apparatus as an example of a substrate processing apparatus, and there is a vertical type apparatus as an example of a semiconductor manufacturing apparatus. In the vertical device, a boat as a substrate holding unit that holds a plurality of substrates (hereinafter, also referred to as wafers) in multiple stages is carried into a processing chamber in a reaction tube while holding the substrates, and the temperature is controlled in a plurality of zones. At the same time, the substrate is processed at a predetermined temperature. Until now, in the temperature control of the heater, the heater was turned off when the temperature was lowered, but in recent years, a cooling gas is supplied from the cooling mechanism to positively improve the temperature lowering characteristics after the substrate treatment.

Patent Document 1 discloses a technique of changing the flow of cooling gas at the time of film formation, the temperature lowering, and the temperature recovery by opening and closing the on-off valve. Further, Patent Document 2 describes a technique for setting the temperature lowering speed of each part of the heater by changing the number and arrangement of blowout holes. However, in the control of the cooling gas flow rate in the cooling unit configuration described above, since the reaction tube cannot be cooled uniformly during rapid cooling, the change in the temperature lowering rate differs for each zone, and the temperature history between the zones differs. There was a problem that it would occur.

Japanese Unexamined Patent Publication No. 2014-209569 International Publication No. 2008/099449

An object of the present invention is to provide a configuration for improving the responsiveness of heating control and cooling control between zones.

According to one aspect of the present invention, an intake pipe provided for each zone to supply a gas for cooling the reaction tube, a control valve provided in the intake pipe for adjusting the gas flow rate, and an intake pipe supplied from the intake pipe. With a configuration provided with a buffer unit for temporarily storing the gas and an opening provided to blow out the gas stored in the buffer unit toward the reaction tube, the zone can be adjusted according to the length ratio in the vertical direction. By setting the flow rate of the gas introduced into the intake pipe, the control valve is opened and closed to adjust the flow rate and the flow velocity of the gas ejected from the opening toward the reaction pipe.

According to the configuration according to the present invention, the responsiveness of heating and cooling control between zones can be improved.

It is a partially cut front view which shows the substrate processing apparatus which concerns on one Embodiment of this invention. It is a front sectional view of the substrate processing apparatus which concerns on one Embodiment of this invention. It is a figure which shows the flowchart which shows an example of the process about temperature among the film formation process which concerns on embodiment of this invention. It is a figure which shows the temperature change in the furnace in the flowchart shown in FIG. It is a figure which shows the main component part of the substrate processing apparatus which concerns on one Embodiment of this invention. It is an enlarged view of a part of the main component shown in FIG. It is a development view of the heat insulation structure in the substrate processing apparatus which concerns on embodiment of this invention. It is a figure which shows the flow velocity of the cooling unit in the substrate processing apparatus which concerns on embodiment of this invention. It is a figure which shows the flow rate between the zones of the cooling unit in the substrate processing apparatus which concerns on embodiment of this invention. It is a figure which shows the cooling zone division and the heating influence range in the substrate processing apparatus which concerns on embodiment of this invention. It is a figure which shows the soaking length distribution in the substrate processing apparatus which concerns on embodiment of this invention. It is a figure which shows the hardware structure of the control computer in the substrate processing apparatus which concerns on embodiment of this invention.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

In the present embodiment, as shown in FIGS. 1 and 2, the substrate processing apparatus 10 according to the present invention is configured as a processing apparatus 10 that carries out a film forming step in a method for manufacturing a semiconductor device.

The substrate processing apparatus 10 shown in FIG. 1 includes a process tube 11 as a supported vertical reaction tube, and the process tube 11 is composed of an outer tube 12 and an inner tube 13 arranged concentrically with each other. ing. Quartz (SiO2) is used for the outer tube 12, and the outer tube 12 is integrally molded into a cylindrical shape with the upper end closed and the lower end open. The inner tube 13 is formed in a cylindrical shape with both upper and lower ends open. The hollow portion of the inner tube 13 forms a processing chamber 14 into which the boat, which will be described later, is carried in, and the lower end opening of the inner tube 13 constitutes a furnace port 15 for taking in and out the boat. As will be described later, the boat 31 is configured to hold a plurality of wafers in a long aligned state. Therefore, the inner diameter of the inner tube 13 is set to be larger than the maximum outer diameter of the wafer 1 to be handled (for example, a diameter of 300 mm).

The lower end portion between the outer tube 12 and the inner tube 13 is hermetically sealed by a manifold 16 constructed in a substantially cylindrical shape. The manifold 16 is detachably attached to the outer tube 12 and the inner tube 13 for replacement of the outer tube 12 and the inner tube 13, respectively. By supporting the manifold 16 to the housing 2 of the CVD device, the process tube 11 is in a vertically installed state. Hereinafter, in the figure, only the outer tube 12 may be shown as the process tube 11.

The exhaust passage 17 is formed in a circular ring shape having a constant cross-sectional shape by the gap between the outer tube 12 and the inner tube 13. As shown in FIG. 1, one end of the exhaust pipe 18 is connected to the upper part of the side wall of the manifold 16, and the exhaust pipe 18 is in a state of being connected to the lowermost end portion of the exhaust passage 17. An exhaust device 19 controlled by a pressure controller 21 is connected to the other end of the exhaust pipe 18, and a pressure sensor 20 is connected in the middle of the exhaust pipe 18. The pressure controller 21 is configured to feedback control the exhaust device 19 based on the measurement result from the pressure sensor 20.

A gas introduction pipe 22 is arranged below the manifold 16 so as to communicate with the furnace port 15 of the inner tube 13, and a gas supply device 23 for supplying a raw material gas or an inert gas is connected to the gas introduction pipe 22. ing. The gas supply device 23 is configured to be controlled by the gas flow controller 24. The gas introduced from the gas introduction pipe 22 to the furnace port 15 flows through the processing chamber 14 of the inner tube 13 and is exhausted by the exhaust pipe 18 through the exhaust passage 17.

A seal cap 25 that closes the lower end opening comes into contact with the manifold 16 from the lower side in the vertical direction. The seal cap 25 is constructed in a disk shape substantially equal to the outer diameter of the manifold 16, and is configured to be vertically raised and lowered by a boat elevator 26 installed in the waiting chamber 3 of the housing 2. The boat elevator 26 is configured by a motor-driven feed screw shaft device, bellows, and the like, and the motor 27 of the boat elevator 26 is configured to be controlled by a drive controller 28. A rotary shaft 30 is arranged on the center line of the seal cap 25 and is rotatably supported, and the rotary shaft 30 is configured to be rotationally driven by a rotary mechanism 29 as a motor controlled by a drive controller 28. There is. A boat 31 is vertically supported at the upper end of the rotating shaft 30.

The boat 31 includes a pair of upper and lower end plates 32 and 33, and three holding members 34 erected vertically between them, and a large number of holding grooves 35 are longitudinally formed in the three holding members 34. Engraved at equal intervals in the direction. The holding grooves 35, 35, 35 carved in the same step in the three holding members 34 are opened so as to face each other. By inserting the wafer 1 between the holding grooves 35 of the same stage of the three holding members 34, the boat 31 holds the plurality of wafers 1 so as to be aligned and held horizontally and centered on each other. It has become. A heat insulating cap portion 36 is arranged between the boat 31 and the rotating shaft 30. The rotating shaft 30 is configured to support the boat 31 in a state of being lifted from the upper surface of the seal cap 25 so that the lower end of the boat 31 is separated from the position of the furnace opening 15 by an appropriate distance. The heat insulating cap portion 36 is designed to insulate the vicinity of the furnace port 15.

On the outside of the process tube 11, heater units 40 as heating devices are concentrically arranged and installed in a state of being supported by the housing 2. The heating device 40 includes a case 41. The case 41 is made of stainless steel (SUS) and is formed in a cylindrical shape, preferably a cylindrical shape, in which the upper end is closed and the lower end is opened. The inner diameter and the total length of the case 41 are set larger than the outer diameter and the total length of the outer tube 12. Further, in the present embodiment, the upper end side of the heating device 40 is divided into seven control zones U1, U2, CU, C, CL, L1 and L2 as a plurality of heating regions (heating control zones) toward the lower end side. There is.

A heat insulating structure 42, which is an embodiment of the present invention, is installed in the case 41. The heat insulating structure 42 according to the present embodiment is formed in a cylindrical shape, preferably in a cylindrical shape, and the side wall portion 43 of the cylindrical body is formed in a multi-layer structure. That is, the heat insulating structure 42 includes a side wall outer layer 45 arranged outside the side wall portion 43 and a side wall inner layer 44 arranged inside the side wall portion 43, and between the side wall outer layer 45 and the side wall inner layer 44. It includes a partition portion 105 that isolates the side wall portion 43 into a plurality of zones (regions) in the vertical direction, and an annular buffer 106 as a buffer portion provided between the partition portion 105 and the partition portion 105 adjacent to the partition portion 105.

Further, the buffer portion 106 is configured to be divided into a plurality of parts by a partition portion 106a as a slit according to the length thereof. That is, a partition portion 106a for dividing the buffer portion 106 into a plurality of parts is provided according to the length of the zone. In the present specification, the partition portion 105 is also referred to as a first partition portion 105, and the partition portion 106a is also referred to as a second partition portion 106a. Further, the partition portion 105 may be called an isolation portion that isolates the partition portion 105 into a plurality of cooling zones. The control zones CU, C, CL, L1, L2 and the buffer unit 106 are provided so as to face each other, and the height of each control zone and the height of the buffer unit 106 are substantially the same. On the other hand, the heights of the control zones U1 and U2 above the control zones and the height of the buffer unit 106 facing these control zones are configured to be different. Specifically, since the height of the buffer unit 106 facing the control zones U1 and U2 is lower than the height of each zone, the cooling air 90 can be efficiently supplied to each control zone. it can. As a result, the cooling air 90 supplied to the control zones U1 and U2 can be made equivalent to the cooling air 90 supplied to the other control zones, and the control zones CU, C, CL, can also be used in the control zones U1 and U2. The temperature control equivalent to that of L1 and L2 can be performed.

In particular, since the height of the buffer portion 106 facing the control zone U1 that heats the inner space 75 on the exhaust duct 82 side is lower than 1/2 of the height of each zone, the cooling air 90 is set in the control zone U1. Can be efficiently supplied. As a result, even in the control zone U1 closest to the exhaust side, the same temperature control as in other control zones can be performed.

Further, the partition 105 arranged at the uppermost position is located higher than the substrate processing area of the boat 31 and lower than the height of the process tube 11 (approximately the same position as the height of the inner tube 13), and is arranged at the second upper position. Since the partition portion 105 is located at substantially the same height as the wafer 1 mounted on the upper end of the boat 31, the cooling air 90 is applied to the exhaust side (the portion where the wafer 1 is not mounted) of the process tube 11. It can be applied efficiently and can be cooled in the same manner as the process tube 11 corresponding to the substrate processing area of the boat 31. As a result, the entire process tube 11 can be cooled evenly.

In addition, a check damper 104 is provided in each zone as a reverse diffusion prevention unit. Then, the cooling air 90 is configured to be supplied to the buffer portion 106 via the gas introduction path 107 by opening and closing the reverse diffusion prevention body 104a. The cooling air 90 supplied to the buffer unit 106 flows through the gas supply flow path 108 provided in the side wall inner layer 44 (not shown in FIG. 2), and is a part of the supply path including the gas supply flow path 108. The cooling air 90 is configured to be supplied to the internal space 75 from the opening hole 110 as the opening.

When the cooling air 90 is not supplied from a gas source (not shown), the reverse diffusion preventive body 104a serves as a lid so that the atmosphere of the internal space 75 does not flow backward. The opening pressure of the reverse diffusion prevention body 104a may be changed according to the zone. Further, a heat insulating cloth 111 as a blanket is provided between the outer peripheral surface of the side wall outer layer 45 and the inner peripheral surface of the case 41 so as to absorb the thermal expansion of the metal.

Then, the cooling air 90 supplied to the buffer portion 106 flows through the gas supply flow path 108 provided in the side wall inner layer 44 (not shown in FIG. 2), and supplies the cooling air 90 to the internal space 75 from the opening hole 110. It is configured in.

As shown in FIGS. 1 and 2, a ceiling wall portion 80 as a ceiling portion is covered on the upper end side of the side wall portion 43 of the heat insulating structure 42 so as to close the inner space 75. An exhaust port 81 as a part of an exhaust path for exhausting the atmosphere of the inner space 75 is formed in an annular shape on the ceiling wall portion 80, and the lower end of the upstream end of the exhaust port 81 leads to the inner space 75. .. The downstream end of the exhaust port 81 is connected to the exhaust duct 82.

Next, the operation of the substrate processing apparatus 10 will be described.

As shown in FIG. 1, when a predetermined number of wafers 1 are loaded into the boat 31, the boat 31 holding the wafer 1 group has a seal cap 25 raised by the boat elevator 26. It is carried into the processing chamber 14 of the inner tube 13 (boat loading). When the seal cap 25 that has reached the upper limit is pressed against the manifold 16, the inside of the process tube 11 is sealed. The boat 31 is left in the processing chamber 14 while being supported by the seal cap 25.

Subsequently, the inside of the process tube 11 is exhausted by the exhaust pipe 18. Further, the inside of the process tube 11 is heated to the target temperature by the side wall heating element 56 by the sequence control of the temperature controller 64. The error between the actual temperature rise inside the process tube 11 and the target temperature of the sequence control of the temperature controller 64 is corrected by feedback control based on the measurement result of the thermocouple 65. Further, the boat 31 is rotated by the motor 29.

When the internal pressure and temperature of the process tube 11 and the rotation of the boat 31 become stable as a whole, the raw material gas is introduced into the processing chamber 14 of the process tube 11 from the gas introduction pipe 22 by the gas supply device 23. The raw material gas introduced by the gas introduction pipe 22 flows through the processing chamber 14 of the inner tube 13 and is exhausted by the exhaust pipe 18 through the exhaust passage 17. When flowing through the processing chamber 14, a predetermined film is formed on the wafer 1 by a thermal CVD reaction caused by contact of the raw material gas with the wafer 1 heated to a predetermined processing temperature.

When the predetermined treatment time elapses, after the introduction of the treatment gas is stopped, a purge gas such as nitrogen gas is introduced into the process tube 11 from the gas introduction pipe 22. At the same time, the cooling air 90 as the cooling gas is supplied from the intake pipe 101 to the gas introduction path 107 via the reverse diffusion prevention body 104a. The supplied cooling air 90 is temporarily stored in the buffer portion 106 and blown out from the plurality of opening holes 110 to the inner space 75 via the gas supply flow path 108. The cooling air 90 blown from the opening hole 110 into the inner space 75 is exhausted by the exhaust port 81 and the exhaust duct 82.

Since the entire heater unit 40 is forcibly cooled by the flow of the cooling air 90, the heat insulating structure 42 is rapidly cooled together with the process tube 11. Since the inner space 75 is isolated from the processing chamber 14, the cooling air 90 can be used as the cooling gas. However, an inert gas such as nitrogen gas may be used as the cooling gas in order to further enhance the cooling effect and prevent corrosion of the side wall heating element 56 under high temperature due to impurities in the air.

When the temperature of the processing chamber 14 drops to a predetermined temperature, the boat 31 supported by the seal cap 25 is lowered by the boat elevator 26 and is carried out (boat unloading) from the processing chamber 14.

After that, by repeating the above operation, the film forming process on the wafer 1 is carried out by the substrate processing apparatus 10.

As shown in FIG. 12, the control computer 200 as a control unit includes a computer main body 203 including a CPU (Central Precessing Unit) 201 and a memory 202, a communication IF (Interface) 204 as a communication unit, and a storage unit. The storage device 205 and the display / input device 206 as an operation unit are provided. That is, the control computer 200 includes a component as a general computer.

The CPU 201 constitutes the center of the operation unit, executes a control program stored in the storage device 205, and executes a recipe (for example, a process recipe) recorded in the storage device 205 according to an instruction from the operation unit 206. To do. Needless to say, the recipe for the process includes temperature control from step S1 to step S6, which will be described later, shown in FIG.

Further, as the recording medium 207 for storing the operation program of the CPU 201 and the like, a ROM (Read Only Memory), an EEPROM (Electrically Erasable Programmable Read Only Memory), a flash memory, a hard disk and the like are used. Here, the RAM (Random Access Memory) functions as a work area of the CPU or the like.

The communication IF204 is electrically connected to the pressure controller 21, the gas flow rate controller 24, the drive controller 28, and the temperature controller 64 (these may be collectively referred to as a sub controller), and can exchange data related to the operation of each component. it can. It is also electrically connected to the valve control unit 300, which will be described later, and can exchange data for controlling the multi-cooling unit.

In the embodiment of the present invention, the control computer 200 has been described as an example, but the present invention is not limited to this, and can be realized by using a normal computer system. For example, the above-mentioned processing can be executed by installing the program from a recording medium 207 such as a CDROM or USB in which the program for executing the above-mentioned processing is stored in a general-purpose computer. Further, a communication IF204 including a communication line, a communication network, a communication system, and the like may be used. In this case, for example, the program may be posted on a bulletin board of a communication network and provided by superimposing it on a carrier wave via the network. Then, the above-mentioned processing can be executed by starting the program provided in this way and executing it in the same manner as other application programs under the control of the OS (Operating System).

Next, an example of the film forming process performed by the substrate processing apparatus 10 will be described with reference to FIGS. 3 and 4. Reference numerals S1 to S6 shown in FIG. 4 indicate that each step S1 to S6 of FIG. 3 is performed.

Step S1 is a process of stabilizing the temperature in the furnace to a relatively low temperature T0. In step S1, the substrate 1 has not yet been inserted into the furnace.

Step S2 is a process of inserting the substrate 1 held by the boat 31 into the furnace. Since the temperature of the substrate 1 is lower than the temperature T0 in the furnace at this point, the temperature in the furnace is temporarily lower than T0 as a result of inserting the substrate 1 into the furnace, but the temperature control device 74 or the like described later may be used. The temperature inside the furnace stabilizes at the temperature T0 again after a short period of time. For example, when the temperature T0 is room temperature, this step may be omitted and is not an essential step.

Step S3 is a process of raising the temperature in the furnace by the heater unit 40 from the temperature T0 to the target temperature T1 for performing the film forming process on the substrate 1.

Step S4 is a process of maintaining and stabilizing the temperature in the furnace at the target temperature T1 in order to perform the film forming process on the substrate 1.

Step S5 is a process of gradually lowering the temperature in the furnace from the temperature T1 to a relatively low temperature T0 again by the cooling unit 280 and the heater unit 40, which will be described later, after the film formation process is completed. It is also possible to rapidly cool from the processing temperature T1 to the temperature T0 by the cooling unit 280 while turning off the heater unit 40.

Step S6 is a process of pulling out the film-forming substrate 1 together with the boat 31 from the inside of the furnace.

When the untreated substrate 1 to be subjected to the film forming treatment remains, the treated substrate 1 on the boat 31 is replaced with the untreated substrate 1, and the series of processes of steps S1 to S6 are repeated.

In each of the processes of steps S1 to S6, after obtaining a stable state in which the temperature inside the furnace is in a predetermined minute temperature range with respect to the target temperature and the state continues for a predetermined time, the next step is performed. You are supposed to go to the steps. Alternatively, recently, in steps S1, S2, S5, S6 and the like, it is possible to move to the next step without obtaining a stable state for the purpose of increasing the number of film formations processed on the substrate 1 in a certain period of time. It is done.

FIG. 5 is an illustrated example for explaining the cooling unit (cooling device) 100 as the multi-cooling unit in the present embodiment. The outer tube 12 and the inner tube 13 are omitted, and the process tube 11 and the process tube 11 are shown in one configuration, and the configuration related to the heating device 40 is omitted.

As shown in FIG. 5, the cooling device 100 supplies a heat insulating structure 42 having a plurality of cooling zones in the vertical direction and cooling air 90 as a cooling gas for cooling the inside of the process tube 11 for each cooling zone. Check that the intake pipe 101 is provided, the control valve 102 is provided in the intake pipe 101 as a conduction valve for adjusting the gas flow rate, and the intake pipe 101 is provided to prevent back diffusion of the atmosphere from the heat insulating structure 42 side. It is equipped with a damper 104. Further, the ceiling wall portion 80 including the exhaust port 81 for exhausting the atmosphere from the space 75 and the exhaust duct 82 may be configured as the cooling device 100.

The cooling device 100 includes an intake pipe 101 for supplying cooling air 90 for cooling the process tube 11 in each of a plurality of cooling zones, a control valve 102 provided in the intake pipe 101, and an intake pipe 101 provided in each cooling zone. The process tube 11 is passed through a buffer portion 106 that is communicated and temporarily stores the gas supplied from the intake pipe 101, and a cooling air 90 that is stored in the buffer portion 106 via a gas supply flow path 108 provided in the side wall inner layer 44. A plurality of opening holes 110 for ejecting gas toward the air are provided, and the flow rate and flow velocity of the cooling air 90 ejected from each opening hole 110 in each cooling zone are uniformly maintained. ..

Further, the cross-sectional area (or pipe diameter) between the cooling zones of the intake pipe 101 is determined according to the ratio of the lengths of the cooling zones in the height direction. As a result, the jet air volume is made uniform among the cooling zones. Further, the cross-sectional area of the intake pipe 101 is configured to be larger than the total cross-sectional area of the opening holes 110. Similarly, the flow path cross-sectional area of the buffer portion 106 is configured to be larger than the total cross-sectional area of the opening holes 110. In FIG. 5, since the lengths between the cooling zones in the height direction are substantially the same, the intake pipe 101, the control valve 102, and the check damper 104 having the same size in each cooling zone are provided.

Further, since the opening holes 110 are provided at the same intervals in the circumferential direction and the vertical direction in each cooling zone, the cooling device 100 puts the cooling air 90 stored in the buffer portion 106 into the space 75 and the gas supply flow path 108. It can be blown out evenly through. Further, by adjusting the flow rate of the cooling air 90 introduced into the intake pipe 101 according to the length ratio in the height direction between the cooling zones and opening and closing the control valve 102, the opening hole 110 is connected to the process tube 11. The flow rate and flow velocity of the gas ejected toward the same can be the same.

Therefore, the process tubes 11 facing each cooling zone from substantially the same height as the uppermost stage of the region where the product substrate is placed on the boat 31 to the lowermost stage of the region where the product substrate is located are uniformly cooled by the cooling air 90. Will be done. That is, the cooling device 100 can evenly cool the inside of the cooling zone and between the cooling zones.

Further, since the atmosphere of the space 75 is exhausted from the upper exhaust port 81, the check damper 104 is located in the center of the buffer portion 106 provided in each cooling zone so that the cooling air 90 can be efficiently stored in the buffer portion 106. It is configured to be communicated. The check damper 104 may be configured to communicate with the lower side of the buffer unit 106.

Further, the intake pipe 101 is configured to be provided with a throttle portion 103 as an orifice that suppresses the flow rate of the cooling air 90 ejected from the opening hole 110. However, the throttle portion 103 is provided for each cooling zone as needed.

For example, when the length in the height direction of each zone is different and the flow rate of the cooling air 90 introduced into each cooling zone is different, the cooling air 90 introduced into each cooling zone is the same, but the predetermined cooling zone The throttle portion 103 is provided to suppress the cooling capacity, and is configured to be provided when adjusting the flow rate and the flow velocity of the cooling air 90.

Further, the valve control unit 300 is configured to be able to adjust the opening degree of the control valve 102 based on the data from the temperature controller 64 and the thermocouple 65 based on the set value from the control unit 200. As a result, the cooling capacity of each cooling zone can be adjusted by the opening degree of the control valve 102, so that there is a machine-to-device difference caused by fluctuations in the customer facility exhaust capacity during quenching, variations in individual parts, and installation conditions in the equipment. It can be reduced.

The heat insulating structure 42 used in the heating device 40 having control zones (U1, U2, CU, C, CL, L1, L2 in this embodiment) as a plurality of heating regions has a side wall formed in a cylindrical shape. A partition having a portion 43, the side wall portion 43 being formed in a multi-layer structure, and separating the side wall portion 43 into a plurality of cooling zones (U1, U2, CU, C, CL, L1, L2) in the vertical direction. A cylindrical space between the inner layer 44 of the side wall and the outer layer 45 of the side wall, and a buffer portion 106 as an annular buffer formed by a space between the partition portions 105 adjacent to each other in the vertical direction, and a side wall for each zone. It is provided in the side wall outer layer 45 arranged on the outside of the plurality of layers of the portion 43, and is arranged inside the gas introduction path 107 communicating with the buffer portion 106 and the plurality of layers of the side wall portion 43 for each cooling zone. A gas supply flow path 108 provided in the side wall inner layer 44 and communicating with the buffer portion 106, a space 75 provided inside the side wall inner layer 44, and cooling air 90 is blown from the gas supply flow path 108 to the space 75 for each cooling zone. The configuration is provided with opening holes 110 provided at the same intervals in the circumferential direction and the vertical direction of the side wall inner layer 44 so as to be exposed.

FIG. 6 is an enlarged view of the connection state between the heat insulating structure 42 and the check damper 104 shown in FIG. Here, it is an enlarged view of the CL zone shown in FIG. Further, the gas supply flow path 108 and the opening hole 110 provided in the side wall inner layer 44 are omitted.

A partition portion 105 is provided between the side wall outer layer 45 and the side wall inner layer 44, and a buffer portion 106 is provided in the space between the partition portions 105. The buffer portion 106 is configured to be divided into an upper region and a lower region by the partition portion 106a. Since the partition portion 106a is provided, it is possible to suppress the generation of convection generated in the buffer portion 106. This is because convection was generated in the heat insulating structure 42, that is, the buffer portion 106 due to the temperature difference between the side wall heating element 56 and the water-cooled jacket (not shown). In particular, when the quenching function was not used, the temperature difference was about 1 ° C. above and below the cooling zone. The partition portion 106b as the third partition portion shown in FIG. 6 divides the intake portion 113 as an introduction port for communicating the gas introduction path 107 and the buffer portion 106 into two. Details of the partition portion 106b and the intake portion 113 will be described later.

A check damper 104 is provided via the gas introduction path 107. Since the material of the check damper 104 and the reverse diffusion prevention body 104a is SUS, it is connected to the heat insulating material used for the heater unit 40, and is therefore configured in consideration of heat resistance. Further, a heat insulating cloth 111 for absorbing thermal expansion is provided between the case 41 and the outer layer 45 of the side wall.

As shown in FIG. 6, with the reverse diffusion prevention body 104a open, the cooling air 90 is once stored in the buffer portion 106 and supplied to the space 75 via a gas supply flow path 108 (not shown). On the other hand, when the cooling air 90 is not used, the reverse diffusion prevention body 104a is closed to prevent convection between the intake pipe 101 and the heat insulating structure 42 (not shown).

Further, the opening hole 110 is provided so as to avoid a position facing the gas introduction path 107, and the cooling air 90 supplied from the gas introduction path 107 enters the space 75 from the opening hole 110 via the buffer portion 106. The cooling air 90 supplied from the gas introduction path 107 is not directly introduced, and is configured to be temporarily stored in the buffer unit 106.

As a result, the cooling air 90 introduced into the gas introduction path 107 is temporarily stored in the buffer portion 106 so that the gas supply pressures related to the opening holes 110 are the same. Therefore, the cooling air 90 having the same flow rate and the same flow velocity is blown out from each opening hole 110 provided in the buffer portion 106.

Further, the flow path cross-sectional area of the two intake portions 113 and the flow path cross-sectional area of the buffer portion 106 in each zone are made larger than the total of the flow path cross-sectional areas of the opening holes 110. As a result, the cooling air 90 introduced by opening the reverse diffusion prevention body 104a is supplied via the intake unit 113, so that it is easily stored in the buffer unit 106, and the cooling air 90 is discharged from the opening hole 110 at the same flow rate and the same flow velocity. It is configured to be supplied.

FIG. 7 is a developed view of the side wall inner layer 44. As shown in FIG. 7, the partition 105 separates the cooling zones (U1, U2, CU, C, CL, L1, L2), and the opening holes 110 are in the vertical direction (height direction). ) And the horizontal direction (circumferential direction) are arranged at appropriate positions. A plurality of opening holes 110 are arranged in the vertical direction with respect to each zone, and a plurality of opening holes 110 are arranged in the horizontal direction. Specifically, the number of rows of opening holes 110 provided in the buffer portion 106 is determined according to the vertical length of each zone, and the opening holes 110 are provided substantially evenly in the circumferential direction in each row. Has been done. In addition, each zone is composed of a plurality of areas (A, B, C, ... W, X) in the circumferential direction, and is arranged in a zigzag in the height direction in each area within a certain zone. The opening holes 110 are arranged substantially evenly at the same intervals in the vertical direction and the horizontal direction in all the zones.

Twelve opening holes 110 are arranged in the circumferential direction of each cooling zone (U1, U2, CU, C, CL, L1, L2). The U1 zone, U2 zone, and L2 zone are each provided with two rows of opening holes 110 in the height direction, and the CU zone, C zone, CL zone, and L1 zone are each provided with four rows of opening holes 110 in the height direction. ing. Therefore, 24 opening holes 110 are provided in each of the U1 zone, U2 zone, and L2 zone, and 48 opening holes 110 are provided in each of the CU zone, C zone, CL zone, and L1 zone. The flow ratios introduced into the U1 zone (U2, L2 zone), the C zone, and the intake pipe 101 supplied to each of the remaining zones are U1 zone (U2, L2 zone): C zone (CU, CL, respectively. L1 zone) = 1: 2 = 24 opening holes 110: 48 opening holes 110).

Further, the opening holes 110 are provided so as to avoid the position where the intake portion 113 provided at the boundary between the gas introduction path 107 and the buffer portion 106 is provided. In other words, the opening hole 110 can be provided as long as it is not facing the intake portion 113. Further, the cooling air 90 blown out from the opening hole 110 is arranged so as to avoid the side wall heating element 56. The thermocouple 65 not only avoids direct contact with the cooling air 90 blown out from the opening hole 110, but is also covered with a windbreak block 112 so as not to be affected by the cooling air 90. Although the sizes of the opening holes 110 are different in FIG. 7, it is a schematic view, and the opening cross-sectional areas of the opening holes 110 are formed to have substantially the same size.

The control zone shown on the left side of FIG. 7 (U1, U2, CU, C, CL, L1, L2 in this embodiment) and the cooling zone shown on the right side of FIG. 7 (U1, U2, CU, C, CL, L1, L2) are the same number, and have the same flow path cross-sectional area up to the CU zone, C zone, CL zone, L1 zone, and L2 zone, respectively. In other words, each of the CU zone, C zone, CL zone, L1 zone, and L2 zone coincides with the area surrounded between the upper and lower partition portions 105. However, the flow path cross-sectional area of the U1 zone and the U2 zone is larger in the control zone. As a result, the upper regions (U1 zone and U2 zone) of the plurality of cooling zones are configured to be shorter in the vertical direction than the upper control zones (U1 zone and U2 zone) of the plurality of control zones. .. In other words, the cooling zone (U1 zone and U2 zone) corresponding to the area surrounded between the upper and lower partition portions 105 is configured to be shifted downward from the control zone (U1 zone and U2 zone). The details of the arrangement positions of the upper regions (U1 zone and U2 zone) of the control zone and the upper regions (U1 zone and U2 zone) of the cooling zone will be described later. Further, the U1 zone and the U2 zone of the cooling zone have the same flow path cross-sectional area as the L2 zone.

As shown in FIG. 7, the flow path cross-sectional areas of the U1 zone, the U2 zone, and the L2 zone are small, and the flow path cross-sectional areas of the cooling zones (for example, the C zone) other than these are large. In the C zone, a partition portion 106a for dividing the buffer portion 106 into an upper region and a lower region is provided. The regions divided into the upper side and the lower side are configured to have the same flow path cross-sectional area as the U1 zone (U2 zone and L2 zone), for example. Further, each zone of the CU zone, the CL zone, and the L1 zone, which has a large flow path cross-sectional area as in the C zone, is similarly divided into upper and lower regions by the partition portion 106a. In this way, since the regions provided in all the cooling zones have substantially the same flow path cross-sectional area due to the partition portion 106a, the cooling air 90 proportional to the length in the height direction of the cooling zone is supplied to the intake pipe 101. As a result, the cooling air 90 that has passed through the gas introduction path 107 can be distributed from the intake unit 113 into each buffer unit 106.

Further, as shown in FIG. 7, the intake portion 113, which is the introduction port of the cooling air 90 into the heat insulating structure 42, has a rectangular shape. The intake portion 113 is divided into two areas by the partition portion 106b, and the height of the two areas divided by the partition portion 106b is 114 mm, respectively. Further, this height is substantially the same as the height of the buffer portion 106 of the U1 zone, the U2 zone, and the L2 zone. Therefore, by supplying the cooling air 90 to the intake pipe 101 in the U1 zone, the U2 zone, and the L2 zone, the direction of the gas supplied from the intake pipe 101 to the buffer portion 106 by the partition portion 106b provided in the buffer portion 106. Is uniformly determined, so that the cooling air 90 introduced from the intake unit 113 can be distributed in each buffer unit 106.

A partition 106b is provided in each cooling zone in order to divide the two intake portions 113. In particular, in the U1 zone, the U2 zone, and the L2 zone, the partition portion 106b causes the flow direction of the cooling air 90 to flow in the circumferential direction. It is determined. As a result, the partition portion 106b provided in the buffer portion 106 can efficiently distribute the gas that has passed through the gas introduction path 107 in the buffer portion 106 in the circumferential direction. In order to increase this effect, the intake pipe 101 may be inclined and connected to the intake portion 113.

In this way, the opening holes 110 are arranged according to each cooling zone, and the partition portion 106a and / or the partition portion 106b are provided in the buffer portion 106, so that the cooling is proportional to the length of the cooling zone in the height direction. By supplying the air 90 to the intake pipe 101, the cooling air 90 having the same flow rate and the same flow velocity can be supplied to the process tube 11 from the opening holes 110 in each cooling zone. Further, it is possible to adjust so that the same flow rate and flow velocity of the cooling air 90 are supplied from the opening hole 110 between the cooling zones. As a result, the process tube 11 provided at a position facing each cooling zone can be efficiently cooled, and for example, the temperature deviation within and between the zones is reduced during rapid cooling (for example, the above-mentioned temperature lowering step S5). be able to.

Therefore, when the cooling air 90 having the determined flow rate is introduced into the intake pipe 101 of each cooling zone, the cooling air 90 introduced by opening the reverse diffusion prevention body 104a is introduced into the buffer unit 106 via the intake unit 113. It can be stored. In particular, according to the present embodiment, partition portions 106a and 106b are appropriately provided in the buffer portion 106 according to the cooling zone, and the cooling air 90 efficiently spreads in the buffer portion 106 to relate to each opening hole 110. It is configured so that the supply pressure is the same. Therefore, the cooling air 90 having the same flow rate and flow velocity can be supplied from the opening hole 110 through the gas supply flow path 108 in all the zones and between all the zones, so that the process tube 11 can be cooled uniformly. The flow rate of the cooling air 90 is preferably a flow rate within an adjustable range of the control valve 102. As a result, the flow rate of the cooling air 90 introduced into each zone can be precisely controlled.

Therefore, in the present embodiment, the cooling air 90 having the same flow rate and flow velocity can be supplied from the opening hole 110 through the opening hole 110 through the gas supply flow path 108 in all the zones and between all the zones, so that the process tubes 11 are evenly distributed. Can be cooled. The flow rate of the cooling air 90 is preferably a flow rate within an adjustable range of the control valve 102. As a result, the flow rate of the cooling air 90 introduced into each zone can be precisely controlled.

Needless to say, the opening hole 110 is provided so as to avoid a position facing the gas introduction path 107, and the cooling air 90 blown out from the opening hole 110 is arranged so as to avoid the side wall heating element 56.

Further, in the present embodiment, the partition portion 105 is configured so that the number of control zones and the number of cooling zones match. As a result, continuous control of heating and cooling is possible by making the number of control zones and the number of cooling zones the same. In particular, the arrangement positions of the cooling zones U1 and U2 with respect to the control zones U1 and U2 are devised. , It is possible to shorten the temperature recovery time when the temperature rises and falls. However, it does not deny that the number of control zones and the number of zones are arbitrarily set without being limited to this form.

In the present embodiment, since the heights of the cooling zones U1 and U2 facing the control zones U1 and U2 are lower than the heights of the respective zones, the cooling air 90 is efficiently supplied to the respective control zones. be able to. As a result, the cooling air 90 supplied to the control zones U1 and U2 can be made equivalent to the cooling air 90 supplied to the other control zones, and the control zones CU, C, CL, can also be used in the control zones U1 and U2. The temperature control equivalent to that of L1 and L2 can be performed.

As described above, in the present embodiment, the cooling zones U1 and U2 facing the control zones U1 and U2, which are close to the exhaust side and difficult to efficiently supply the cooling air 90, are shifted downward to the control zones U1 and U2. It is possible to maintain the same temperature control characteristics as the inner space 75 (not shown) facing the inner space 75 and the inner space 75 (not shown) facing the other control zones, and it is possible to improve the responsiveness of heating and cooling control between the zones.

(Example)
Next, an example in which the cooling unit 100 in the present embodiment is verified will be described with reference to FIGS. 8 to 12.

FIG. 8 shows a table comparing the jet wind speeds (flow velocities) of the cooling air 90 when ejected from the respective opening holes 110 in the C zone shown in FIG. The temperature is the result of measuring the flow velocity of the opening hole 110 when the cooling air 90 of 2.0 m3 / min is supplied to the intake pipe 101 of the C zone at room temperature. As described above, according to the present embodiment, the speed of injection from each opening hole 110 can be made substantially the same. Here, as shown in FIG. 7, a is the uppermost region of the C zone, b is the second region from the top of the C zone, c is the third region from the top of the C zone, and d is the top region of the C zone. The fourth (bottom) area is shown respectively.

FIG. 9 is a result of measuring the air volume of the gas introduction path 107 of the cooling unit in the present embodiment. The air volume in each zone is proportional to the zone height. At this time, the air volume (average air volume) per opening hole 110 is 0.04 to 0.05 m3 / min, and the speed of injection from each opening hole 110 can be made substantially the same in all zones. ing.

FIG. 10 shows the result of confirming the heating effect (temperature interference matrix data). Specifically, the set temperature (600 ° C. in the example) is increased by about 5 ° C. for each zone, and the result of checking the temperature influence range at that time is superimposed and displayed. For example, if the waveform is in the U1 zone. , For example, it is written as U1 + 5 in the figure. As shown in FIG. 10, the heating influence range of the U1 zone and the U2 zone is shifted downward from the respective heating zone division positions. In the present embodiment, since the cooling zones U1 and U2 are arranged according to the deviation of the heating influence range of the U1 zone and the U2 zone, the cooling air is supplied to the process tube 11 facing the heating zones of the U1 zone and the U2 zone. 90 can be supplied.

Further, since the exhaust system of the cooling device 100 is installed above, the cooling influence range by the cooling device 100 tends to shift to the upper side from the heating zone division position, particularly in the U1 zone and the U2 zone, so that the cooling zone U1 and U2 are arranged at positions shifted below the heating zones U1 and U2. For example, the plurality of cooling zones shown in FIG. 7 described above are divided into cooling zones in consideration of such a deviation between the heating influence range and the cooling influence range, thereby improving the cooling effect by the cooling air 90. I'm letting you.

Further, as shown in FIG. 2, the cooling zone of the cooling device 100 is not only the opening hole 110 at a position facing the region (the substrate processing region of the boat 31) where various substrates including the product substrate are located, but also the upper side of the process tube 11. The opening hole 110 is provided at a position facing (upper side of the substrate processing area of the boat 31). As a result, the flow rate and the flow velocity of the cooling air 90 supplied to the entire process tube 11 can be made equal, and as a result, the temperature deviation within and between the zones can be reduced.

FIG. 11 compares the temperature distribution of each zone when the cooling unit 100 is not used and is stabilized at 600 ° C. Thereby, according to the cooling unit 100 in the present embodiment, the temperature uniformity between the wafers can be improved.

As described above, according to the present embodiment, the effects described below are obtained.

(a) According to the present embodiment, an intake pipe provided for each zone to supply gas for cooling the reaction tube, a control valve provided in the intake pipe for adjusting the gas flow rate, and supply from the intake pipe. It is provided with a buffer portion for temporarily storing the stored gas and an opening provided so as to blow out the gas stored in the buffer portion toward the reaction tube, according to the length ratio in the vertical direction of the zone. By setting the flow rate of the gas introduced into the intake pipe, the control valve is opened and closed to adjust the flow rate and flow velocity of the gas ejected from the opening toward the reaction pipe. The tube can be cooled evenly.

(b) According to the present embodiment, since the intake pipe is provided with a diffusion prevention unit for preventing the back diffusion of the atmosphere from the inside of the furnace, the back diffusion is prevented when the cooling gas is not used. The influence of heat caused by 40 can be suppressed.

(c) According to the present embodiment, the flow path cross-sectional area of the intake pipe provided for each cooling zone and the flow path cross-sectional area of the buffer portion are configured to be larger than the total cross-sectional area of the opening holes provided for each cooling zone. Therefore, by adjusting the flow rate of the cooling gas supplied to the intake pipe provided in each cooling zone, the flow rate and flow velocity of the cooling gas ejected from each opening hole can be made uniform in the cooling zone. it can. Further, by making the gas supply pressure substantially the same in each opening hole, it is possible to make the gas supply pressure uniform not only in the cooling zone but also between the cooling zones, so that the reaction tube can be cooled uniformly.

(d) According to the present embodiment, if the intake pipe is provided with a throttle portion for narrowing the flow rate, the flow rate supplied from the intake pipe is narrowed down when the diameter of the intake pipe is too large and it is necessary to suppress the flow rate. be able to.

(e) According to the heat insulating structure in the present embodiment, it has a side wall portion formed in a cylindrical shape, the side wall portion is formed in a multi-layer structure, and the side wall portion is separated into a plurality of regions in the vertical direction. A gas introduction path provided in the partition portion to be formed, a buffer portion provided between the adjacent partition portions in the side wall portion, and an outer layer arranged outside of a plurality of layers of the side wall portion and communicating with the buffer portion, and a side wall. It is provided in the inner layer of the side wall arranged inside among the plurality of layers of the part, and is provided so as to blow out the cooling gas from the gas supply flow path communicating with the buffer part and the space inside the inner layer of the side wall. Since it is provided with an opening, by adjusting the flow rate of the cooling gas supplied to the intake pipe provided in each region, from each opening provided in the circumferential direction and the height direction in each region. The flow rate and flow velocity of the ejected cooling gas can be made uniform.

(f) According to the present embodiment, the heights of the cooling zones U1 and U2 are shifted below the heating zones U1 and U2, and the substrate processing of the boat 31 as well as the reaction tube facing the substrate processing region of the boat 31 is performed. Since the cooling gas can be evenly supplied to the reaction tube in the upper region of the region, the cooling gas can be evenly applied not only in the cooling zone but also between the cooling zones, and the entire reaction tube can be cooled evenly. it can. Thereby, the temperature controllability of the heating zones U1 and U2 can be improved.

(g) According to the present embodiment, by shifting the heights of the cooling zones U1 and U2 below the heating zones U1 and U2, the flow rate and the flow velocity of the cooling gas supplied to the entire process tube 11 are made equal. Since the entire reaction tube can be cooled evenly, the responsiveness of heating and cooling control between control zones can be improved.

(H) Further, according to the present embodiment, since the supply pressure related to each opening hole is the same in each cooling zone, the cooling gas is supplied from the opening hole at the same flow rate and the same flow velocity, and in each control zone. Since it is configured to maintain the temperature control characteristics, the responsiveness of heating and cooling control between zones can be improved, resulting in improved substrate temperature recovery time and substrate in-plane temperature uniformity. An improvement in rapid heating capacity is achieved. Further, since the temperature deviation during quenching can be made substantially uniform in each zone, the temperature uniformity between the substrates is improved.

Further, the present invention can be applied not only to a semiconductor manufacturing apparatus but also to an apparatus for processing a glass substrate such as an LCD apparatus.

Further, the present invention relates to a semiconductor manufacturing technique, particularly a heat treatment technique in which a substrate to be processed is housed in a processing chamber and processed in a state of being heated by a heating device. Applicable to semiconductor wafers that are effective for substrate processing equipment used for oxidation treatment and diffusion treatment, reflow and annealing for carrier activation and flattening after ion implantation, and film formation processing by thermal CVD reaction. can do.

1: Substrate (wafer)
10: Substrate processing device 11: Reaction tube (process tube)
14: Processing room (inner space)
40: Heating device (heater unit)
100: Cooling unit (cooling device)

Claims (21)

Provided for each zone, an intake for supplying gas to cool the reaction tube tube, the disposed in an intake pipe, a control valve for adjusting the flow rate of the gas, accumulating the gas supplied from the intake pipe temporarily a buffer unit in the buffer portion are arranged at the same intervals in the circumferential direction of the reaction tube, and provided with an opening which vertically Ru are arranged at the same interval of the reaction tube, in the vertical direction of the zone By setting the flow rate of the gas introduced into the intake pipe according to the length ratio, the control valve is opened and closed, and the flow rate and the flow velocity of the gas ejected from the opening toward the reaction pipe are adjusted. A cooling unit that is configured to be. The cooling unit according to claim 1, wherein the intake pipe is provided with a diffusion prevention unit for preventing reverse diffusion of the atmosphere from the inside of the furnace. The cooling unit according to claim 1, wherein the intake pipe is provided with a throttle portion that suppresses the flow rate of the cooling gas ejected from the opening. The first aspect of claim 1, wherein the flow path cross-sectional area of the intake pipe and the flow path cross-sectional area of the buffer portion provided for each zone are larger than the total cross-sectional area of the openings provided for each zone. Cooling unit. An intake pipe provided for each zone to supply a gas for cooling the reaction tube, a control valve provided in the intake pipe for adjusting the gas flow rate, and the gas supplied from the intake pipe are temporarily stored. a buffer unit, wherein an opening is provided to blow reservoir was gas buffer section toward the reaction tube, it is provided in the buffer unit, the orientation of the gas supplied to the buffer from the intake pipe The control valve is opened and closed by providing a partition portion configured to determine the gas flow rate to be introduced into the intake pipe according to the vertical length ratio of the zone. A cooling unit configured to adjust the flow rate and flow velocity of the gas ejected from the opening toward the reaction tube . Further, the side wall portion formed in a cylindrical shape has a heat insulating structure formed in a multi-layer structure.
The heat insulating structure has a first partition portion that isolates the side wall portion into a plurality of regions in the vertical direction, a gas introduction path that communicates the buffer portion and the intake pipe, and the opening that communicates with the buffer portion. The cooling unit according to claim 1, further comprising a gas supply flow path for supplying the gas to the reaction tube via a unit. The cooling unit according to claim 6, wherein the gas introduction path is provided in an outer layer arranged outside of a plurality of layers of the side wall portion for each region separated by the first partition portion. The cooling unit according to claim 6, wherein the gas supply flow path is provided in an inner layer arranged inside a plurality of layers of the side wall portion for each of the regions separated by the first partition portion. The cooling unit according to claim 6, wherein the buffer portion further includes a second partition portion that suppresses convection generated in the region separated by the first partition portion. The cooling unit according to claim 6, wherein the opening is provided so as to avoid a position facing the introduction port communicating the gas introduction path and the buffer portion. The cooling unit according to claim 1, wherein the openings are all arranged at the same intervals in the circumferential direction of the reaction tube. The cooling unit according to claim 1, wherein the openings are all arranged at the same interval in the vertical direction of the reaction tube. An intake pipe provided for each zone to supply a gas for cooling the reaction tube, a control valve provided in the intake pipe for adjusting the gas flow rate, and the intake pipe communicated with the intake pipe for each zone. A buffer portion for temporarily storing the gas supplied from the above, and an opening arranged on the buffer portion side in the circumferential direction of the reaction tube and at the same interval in the vertical direction of the reaction tube. comprising, by setting the flow rate of the gas introduced into the intake pipe in accordance with the height direction of the length ratio of the zone, it is ejected toward the reaction tube through the opening by opening and closing the control valve A substrate processing apparatus comprising a cooling unit configured to regulate the flow rate and flow rate of gas. Further equipped with a heating device having a plurality of control zones in the vertical direction,
The substrate processing apparatus according to claim 13 , wherein the first partition portion is arranged so that the number of the control zones and the number of the zones match. The zone is formed between the upper and lower first partitions,
The claim is configured to shift the upper first partition portion downward so that the height of the zone is lower than the height of the control zone in the upper zone facing the upper control zone. 14. The substrate processing apparatus according to 14 . The buffer portion is provided with a second partition portion provided for each zone.
The substrate processing apparatus according to claim 13 , wherein the second partition portion is configured to determine the direction of gas flowing in the buffer portion. A process of carrying a plurality of substrates into a reaction tube and processing the substrates at a predetermined temperature,
An intake pipe provided for each zone to supply a gas for cooling the reaction tube, a control valve provided in the intake pipe for adjusting the gas flow rate, and the intake pipe communicated with the intake pipe for each zone. A buffer portion for temporarily storing the gas supplied from the above, and an opening arranged on the buffer portion side in the circumferential direction of the reaction tube and at the same interval in the vertical direction of the reaction tube. By setting the flow rate of the gas introduced into the intake pipe according to the length ratio in the height direction of the zone, the control valve is opened and closed and the gas is ejected from the opening toward the reaction pipe. A step of cooling the reaction tube by a cooling unit configured to adjust the flow rate and flow velocity of the gas.
The step of carrying out the treated substrate from the reaction tube and
A method for manufacturing a semiconductor device having. An intake pipe provided for each zone to supply a gas for cooling the reaction tube, a control valve provided in the intake pipe for adjusting the gas flow rate, and the gas supplied from the intake pipe are temporarily stored. The direction of the buffer portion, the opening provided so as to blow out the gas stored in the buffer portion toward the reaction tube, and the gas provided in the buffer portion and supplied from the intake pipe to the buffer portion. The control valve is opened and closed by providing a partition portion configured to determine the gas flow rate to be introduced into the intake pipe according to the vertical length ratio of the zone. A substrate processing apparatus including a cooling unit configured to adjust the flow rate and flow velocity of the gas ejected from the opening toward the reaction tube. A process of carrying a plurality of substrates into a reaction tube and processing the substrates at a predetermined temperature,
An intake pipe provided for each zone to supply a gas for cooling the reaction tube, a control valve provided in the intake pipe for adjusting the flow rate of the gas, and a gas provided in the zone and directed toward the reaction tube. A valve portion that communicates with the intake pipe for each zone and temporarily stores the gas supplied from the intake pipe, and a buffer portion provided in the buffer portion, from the intake pipe to the buffer portion. By providing a partition that is configured to determine the direction of the gas to be supplied, and by setting the flow rate of the gas introduced into the intake pipe according to the length ratio in the height direction of the zone. A step of cooling the reaction tube by a cooling unit configured to open and close the control valve to adjust the flow rate and flow velocity of the gas ejected from the opening toward the reaction tube.
The step of carrying out the treated substrate from the reaction tube and
A method for manufacturing a semiconductor device having. The process of charging the reaction tube with a plurality of substrates held by the substrate holding member,
A step of processing the substrate while controlling the heating device so as to maintain the temperature inside the reaction tube at a predetermined temperature.
An intake pipe provided for each zone to supply a gas for cooling the reaction tube, a control valve provided in the intake pipe for adjusting the flow rate of gas, and a gas provided in the zone and directed toward the reaction tube. A buffer portion that communicates with the intake pipe for each zone and temporarily stores the gas supplied from the intake pipe is provided, and the gas is provided according to the length ratio in the height direction of the zone. By setting the flow rate of the gas introduced into the intake pipe, the control valve is opened and closed to adjust the flow rate and the flow velocity of the gas ejected from the opening toward the reaction pipe. A step of lowering the temperature to a temperature lower than the predetermined temperature while cooling by the cooling unit and controlling the heating device.
A step of carrying out the substrate holding member holding the processed substrate from the reaction tube, and
A method for manufacturing a semiconductor device having. An intake pipe provided for each zone to supply a gas for cooling the reaction tube, a control valve provided in the intake pipe for adjusting the flow rate of gas, and a gas provided in the zone and directed toward the reaction tube. A buffer portion that communicates with the intake pipe for each zone and temporarily stores the gas supplied from the intake pipe is provided, and the gas is provided according to the length ratio in the height direction of the zone. By setting the flow rate of the gas introduced into the intake pipe, the control valve is opened and closed to adjust the flow rate and the flow velocity of the gas ejected from the opening toward the reaction pipe. With the cooling unit
A plurality of substrates are charged into the reaction tube while being held by the substrate holding member, and the substrates are processed while controlling the heating device so as to maintain the temperature inside the reaction tube at a predetermined temperature. A control unit that lowers the temperature to a temperature lower than the predetermined temperature while controlling the heating device, and carries out the substrate holding member holding the treated substrate from the reaction tube.
Board processing equipment equipped with.

Images