JP6451379B2 - Power converter - Google Patents

Description

  The present invention relates to a power conversion device that includes a plurality of electronic components and a plurality of cooling pipes that cool the electronic components, and includes a stacked body formed by stacking the electronic components and the cooling pipes.

  As a power conversion device that performs power conversion between DC power and AC power, a plurality of electronic components, a plurality of cooling pipes that cool the electronic components, and a bus bar that electrically connects the plurality of electronic components to each other, A structure in which a laminate is formed by laminating the electronic component and the cooling pipe is known (see Patent Document 1 below).

  The electronic component includes a plurality of semiconductor modules containing semiconductor elements, a smoothing capacitor connected to the semiconductor module, a reactor, and a filter capacitor. A booster circuit is formed by a part of the plurality of semiconductor modules and the reactor. The filter capacitor is provided to remove noise current and is connected to the reactor.

  In addition, an inverter circuit is constituted by another part of the semiconductor modules and the smoothing capacitor. The inverter circuit is configured to convert DC power into AC power and drive the AC load using the obtained AC power.

JP 2007-174760 A

  However, in the power conversion device, a large inductance may be parasitic on the bus bar. That is, in the power converter, a reactor or a filter capacitor may be interposed between semiconductor modules or between a semiconductor module and a smoothing capacitor (see FIGS. 9 and 10). In this case, the bus bar that connects the semiconductor module and the smoothing capacitor needs to straddle the re-cle and the filter capacitor, and becomes long. Therefore, a large inductance tends to be parasitic on the bus bar. Therefore, when the semiconductor module is turned on / off, a large surge is likely to occur due to the inductance.

  The present invention has been made in view of such a background, and an object of the present invention is to provide a power converter that can further reduce the inductance parasitic on the bus bar.

One embodiment of the present invention includes a plurality of electronic components;
A plurality of cooling pipes for cooling the electronic component;
A bus bar for electrically connecting the plurality of electronic components to each other;
The electronic component and the cooling pipe are laminated to form a laminate.
A booster circuit for boosting a voltage of a DC power supply by the plurality of electronic components; and two inverter circuits of a first inverter circuit and a second inverter circuit for converting DC power boosted by the booster circuit into AC power; Formed,
It said electronic component includes a plurality of semiconductor modules with a built-in semiconductor element was connected to the semiconductor module, and two smoothing capacitors between the first smoothing capacitor and second smoothing capacitor, a reactor constituting the step-up circuit And a filter capacitor connected to the reactor,
A group of parts is constituted by the semiconductor module and the smoothing capacitor.
The plurality of electronic components constituting the component group are arranged adjacent to each other via the cooling pipe ,
The semiconductor module comprises the first inverter circuit, a plurality of first inverter semiconductor modules arranged in the laminating direction of the laminate, and the second inverter circuit, and a plurality arranged in the laminating direction. A semiconductor module for the second inverter, and a boosting semiconductor module that constitutes the boosting circuit together with the reactor,
In the stacking direction, the first smoothing capacitor, the boosting semiconductor module, the plurality of first inverter semiconductor modules, the second smoothing capacitor, and the plurality of second inverter semiconductor modules in this order. It exists in the power converter device characterized by being arranged .

In the power converter, the component group is constituted by a semiconductor module and a smoothing capacitor. A plurality of electronic components (semiconductor module and smoothing capacitor) constituting this component group are arranged adjacent to each other via a cooling pipe.
If it does in this way, a reactor and a filter capacitor which are not contained in a part group will not intervene between a plurality of electronic parts (semiconductor module and smoothing capacitor) which constitute a part group. Therefore, the semiconductor module and the smoothing capacitor constituting the component group can be brought close to each other. Therefore, the part which connects a semiconductor module and a smoothing capacitor among bus bars can be shortened, and the inductance parasitic on this part can be reduced. Therefore, when the semiconductor module is turned on / off, it is possible to suppress the occurrence of a large surge due to the inductance.

  As described above, according to the present invention, it is possible to provide a power converter that can further reduce the inductance parasitic on the bus bar.

It is sectional drawing of the power converter device in Example 1, Comprising: II sectional drawing of FIG. II-II sectional drawing of FIG. The circuit diagram of the power converter device in Example 1. FIG. Sectional drawing of the power converter device in the reference example 1. FIG. Sectional drawing of the power converter device in Example 2. FIG. Sectional drawing of the power converter device in the reference example 2. FIG. Sectional drawing of the power converter device in the reference example 3. FIG. The circuit diagram of the power converter device in the reference example 3. FIG. Sectional drawing of the power converter device in the comparative example 1. FIG. Sectional drawing of the power converter device in the comparative example 2. FIG.

  The power conversion device can be a vehicle-mounted power conversion device to be mounted on a vehicle such as an electric vehicle or a hybrid vehicle.

Example 1
The Example which concerns on the said power converter device is described using FIGS. 1-3. As shown in FIG. 1, the power conversion device 1 of this example includes a plurality of electronic components 2, a plurality of cooling pipes 3, and bus bars 4 (4p, 4n, 4b, 4i). The cooling pipe 3 cools the electronic component 3. The bus bar 4 electrically connects the plurality of electronic components 2 to each other. The electronic component 2 and the cooling pipe 3 are laminated to form a laminated body 10.

  The electronic component 2 includes a semiconductor module 2m, a smoothing capacitor 2c, a reactor 2r, and a filter capacitor 2f. The semiconductor module 2m includes a semiconductor element 21 (see FIG. 3). The smoothing capacitor 2c is connected to the semiconductor module 2m and smoothes the voltage applied to the semiconductor module 2m. The reactor 2r constitutes a booster circuit 12. The filter capacitor 2f is connected to the reactor 2r. The filter capacitor 2f is provided to remove a noise current included in the DC current I supplied from the DC power supply 8 (see FIG. 3).

The bus bar 4 includes a positive bus bar 4p, a negative bus bar 4n, a boost bus bar 4b, and an input bus bar 4i. The semiconductor module 2m and the smoothing capacitor 2c constitute a component group 5.
The plurality of electronic components 2 (2m, 2c) constituting the component group 5 are arranged adjacent to each other via the cooling pipe 3.

  The power conversion device 1 of this example is a vehicle-mounted power conversion device to be mounted on a vehicle such as an electric vehicle or a hybrid vehicle.

As shown in FIG. 1, the semiconductor module 2m, and the semiconductor module 2m _i inverter, there is a booster semiconductor module 2m _b. As shown in FIG. 3, by the semiconductor module inverter 2m _i and a smoothing capacitor 2c, the inverter circuit 11 is formed. Also, by the boosting semiconductor module 2m _b a reactor 2r, the booster circuit 12 is formed.

  In this example, the booster circuit 12 is used to boost the voltage of the DC power supply 8. After boosting, the inverter circuit 11 is used to convert DC power into AC power, and the three-phase AC motor 81 is driven using the obtained AC power. As a result, the vehicle is running.

In the power conversion device 1 of this example, a first inverter circuit 111 and a second inverter circuit 112 are formed. The first inverter circuit 111 and the second inverter circuit 112 are connected to different three-phase AC motors 81 (81a, 81b), respectively. The power conversion device 1 of the present embodiment includes a first smoothing capacitor 2c _a and the second smoothing capacitor 2c _b, 2 pieces of the smoothing capacitor 2c _(2c a, 2c _b) a.

As shown in FIG. 2, the inverter semiconductor module 2 _mi includes a main body portion 22 including a semiconductor element 21 (see FIG. 3), a power terminal 23 protruding from the main body portion 22, and a control terminal 24. The power terminal 23 includes a positive electrode terminal 23 p and a negative electrode terminal 23 n to which a DC voltage is applied, and an AC terminal 23 a connected to the three-phase AC motor 81. The positive electrode bus bar 4p is connected to the positive electrode terminal 23p. The negative electrode bus bar 4n is connected to the negative electrode terminal 23n. An AC bus bar (not shown) is connected to the AC terminal 23a.
Incidentally, the step-up semiconductor module 2m _b also has a semiconductor module 2m _i structure similar inverter.

The control circuit board 19 is connected to the control terminal 24. The control circuit board 19 is used to control the on / off operation of the semiconductor module 2m (2m _i , 2m _b ).

Further, as described above, the power conversion device 1 of this example includes the positive bus bar 4p, the negative bus bar 4n, the boosting bus bar 4b, and the input bus bar 4i as the bus bar 4. As shown in FIG. 1, the input bus bar 4i is connected to the positive terminal 210 of the filter capacitor 2f and the input terminal 230 of the reactor 2r. Also, the boost bus bar 4b includes an output terminal 240 of the reactor 2r, are connected to the AC terminals 23a of the booster semiconductor module 2m _b.

  The positive bus bar 4p is connected to the positive terminals 23p of all the semiconductor modules 2m and the positive terminal 250 of the smoothing capacitor 2c. The negative bus bar 4n is connected to the negative terminals 23n of all the semiconductor modules 2m, the negative terminal 260 of the smoothing capacitor 2c, and the negative terminal 220 of the filter capacitor 2f.

  An end portion 410 of the input bus bar 4i and an end portion 420 of the negative electrode bus bar 4n protrude outside the case 13, respectively. These end portions 410 and 420 are electrically connected to the DC power source 8 (see FIG. 3).

  On the other hand, as shown in FIG. 1, two cooling pipes 3 adjacent in the stacking direction (X direction) of the stacked body 10 are connected by two connecting pipes 17. The connecting pipe 17 is attached to both ends of the cooling pipe 3 in the width direction (Y direction) orthogonal to both the protruding direction (Z direction) of the power terminal 23 and the X direction.

  In addition, an inlet pipe 14 for introducing the refrigerant 16 and an outlet pipe 15 for leading the refrigerant 16 are attached to the end cooling pipe 3a located at one end in the X direction among the plurality of cooling pipes 3. It has been. When the refrigerant 16 is introduced from the introduction pipe 14, the refrigerant 16 flows through all the cooling pipes 3 through the connecting pipe 17 and is led out from the outlet pipe 15. Thereby, each electronic component 2 is cooled.

  Further, a pressure member 18 (plate spring) is interposed between the first wall 131 of the case 13 and the laminated body 10. Using this pressure member 18, the laminate 10 is pressurized toward the second wall 132 of the case 13. Thereby, while ensuring the contact pressure between the electronic component 2 and the cooling pipe 3, the laminated body 10 is being fixed in the case 13. FIG.

Further, as shown in FIG. 1, in this example, among the plurality of semiconductor modules 2m, the semiconductor module 2m disposed farthest from the inlet tube 14 and outlet tube 15 in the X direction, the step-up semiconductor module 2m _b It is said. Then, the first smoothing capacitor 2c _a, through the cooling tube 3, is arranged at a position adjacent to the boosting semiconductor module 2m _b. Also, the second smoothing capacitor 2c _b, and the semiconductor module 2m _i inverter constituting the first inverter circuit 111 (see FIG. 3), between the semiconductor module 2m _i inverter constituting the second inverter circuit 112 It is arranged.

The reactor 2r is disposed at a position adjacent to the smoothing capacitor 2c (first smoothing capacitor 2c _a ) via the cooling pipe 3. Further, the filter capacitor 2f is arranged at a position adjacent to the reactor 2r through the cooling pipe 3.

The effect of this example will be described. As shown in FIG. 1, in this example, the component group 5 is comprised by the semiconductor module 2m and the smoothing capacitor 2c. A plurality of electronic components 2 (2m, 2c) constituting the component group 5 are arranged adjacent to each other via the cooling pipe 3.
In this way, the reactor 2r and the filter capacitor 2f that are not included in the component group 5 do not intervene between the plurality of electronic components 2 (2m, 2c) constituting the component group 5. Therefore, the semiconductor module 2m and the smoothing capacitor 2c constituting the component group 5 can be brought close to each other. Therefore, the part which connects the semiconductor module 2m and the smoothing capacitor 2c among the positive electrode bus bar 4p and the negative electrode bus bar 4n can be shortened, and the parasitic inductance at the part can be reduced. Therefore, when the semiconductor module 2m is turned on / off, it is possible to suppress the occurrence of a large surge due to the inductance.

  Here, as shown in FIGS. 9 and 10, a plurality of electronic components 92 (92 c and 92 m) constituting the component group 95 are not adjacent to each other via the cooling pipe 93, and there is no component between them. If a filter capacitor 92f not included in the group 95 is present, the smoothing capacitor 92c and the semiconductor module 92m are separated from each other. Therefore, a portion 99 of the bus bars 94p and 94n that connects the smoothing capacitor 92c and the semiconductor module 92m straddles the filter capacitor 92f, and the inductance is easily parasitic on the portion 99. Therefore, when the semiconductor module 92m is turned on / off, a large surge is likely to occur due to the inductance.

  On the other hand, as shown in FIG. 1, as in this example, if a plurality of electronic components 2 (2c, 2m) constituting the component group 5 are arranged adjacent to each other via the cooling pipe 3, The smoothing capacitor 2c and the semiconductor module 2m can be brought close to each other. Therefore, the part which connects smoothing capacitor 2c and semiconductor module 2m among bus bars 4p and 4n can be shortened, and the inductance parasitic on this part can be reduced. Therefore, it is possible to suppress the occurrence of a large surge when the semiconductor module 2m is turned on / off.

Further, as shown in FIG. 1, a semiconductor module 2m of this example, there are a semiconductor module 2m _i and semiconductor module 2m _b for the step-up the inverter. The smoothing capacitor 2c through the cooling pipes 3 are arranged in positions adjacent to the boosting semiconductor module 2m _b.
Therefore, it is possible to make the step-up semiconductor module 2m _b and the smoothing capacitor 2c. Therefore, the bus bar 4p, among 4n, it is possible to shorten the boost semiconductor module 2m _b and part 49 connecting the smoothing capacitor 2c, thereby reducing the inductance parasitic on the site 49. Therefore, it is possible to suppress the occurrence of a large surge when the semiconductor module 2m is turned on / off.

Further, in this example, as shown in FIG. 1, the reactor 2 r is disposed at a position adjacent to the smoothing capacitor 2 c (first smoothing capacitor 2 c _a ) via the cooling pipe 3. Therefore, a step-up semiconductor module 2m _b, a smoothing capacitor 2c, a reactor 2r is to be arranged in this order. Therefore, it is possible to close the boosting semiconductor module 2m _b and the reactor 2r, it is possible to shorten the length of the boost bus bar 4b that connects these. Therefore, it is possible to reduce the inductance parasitic on the boosting bus bar 4b.

The power conversion apparatus 1 according to this embodiment, as shown in FIG. 1, comprises a first smoothing capacitor 2c _a and two smoothing capacitors 2c of the second smoothing capacitor 2c _{b (2c} a, 2c _b) a. The second smoothing capacitor 2c _b includes a semiconductor module 2m _i inverter constituting the first inverter circuit 111 (see FIG. 3), disposed between the semiconductor module 2m _i inverter constituting the second inverter circuit 112 ing.
In this way, the distance from the inverter semiconductor module 2m _i constituting the first inverter circuit 111 to the second smoothing capacitor 2c _b and the inverter semiconductor module 2m _i constituting the second inverter circuit 112 to the second smoothing capacitor a distance to 2c _b, can be made substantially uniform. Therefore, the bus bar 4 (4p, 4n) the inductance parasitic on, can be made substantially uniform semiconductor module 2m _i for each inverter. Therefore, when operating the power conversion apparatus 1 can be suppressed only large surge applied to the part of the semiconductor module 2m _i inverter.

  As described above, according to this example, it is possible to provide a power conversion device that can further reduce inductance parasitic on the bus bar.

( Reference Example 1 )
In the following examples , the same reference numerals used in the drawings among the reference numerals used in the drawings represent the same constituent elements as those in the first embodiment unless otherwise indicated.

In this example, the arrangement position of the electronic component 2 is changed. As shown in FIG. 4, in this embodiment, a smoothing capacitor 2c (first smoothing capacitor 2c _a), a step-up semiconductor module 2m _b, a reactor 2r, and a filter capacitor 2f, are arranged in this order.

With the above configuration, a step-up semiconductor module 2m _b and the reactor 2r, can be brought closer. Therefore, the boosting bus bar 4b connecting them can be made shorter, and the parasitic inductance of the boosting bus bar 4b can be further reduced.
In addition, the configuration and operational effects similar to those of the first embodiment are provided.

(Example 2 )
In this example, the arrangement position of the electronic component 2 is changed. As shown in FIG. 5, in this embodiment, a step-up semiconductor module 2m _b, a smoothing capacitor 2c (first smoothing capacitor 2c _a), a filter capacitor 2f, and a reactor 2r, are arranged in this order.

It may have the above configuration, a step-up semiconductor module 2m _b a reactor 2r, can be arranged relatively close to each other. Therefore, it is possible to reduce the inductance the length of the step-up bus bar 4b connecting these reactors 2r and the boosting semiconductor module 2m _b can be relatively short things, parasitic on the boost bus bar 4b.
In addition, the configuration and operational effects similar to those of the first embodiment are provided.

( Reference Example 2 )
In this example, the number of smoothing capacitors 2c is changed. As shown in FIG. 6, in this example, the number of smoothing capacitors 2c is one. Then, the smoothing capacitor 2c, a semiconductor module 2m _i inverter constituting the first inverter circuit 111 (see FIG. 3), arranged between the inverter semiconductor module 2m _i constituting the second inverter circuit 112 is there.

  With the above configuration, since the number of smoothing capacitors 2c is one, the number of electronic components 2 can be reduced, and the manufacturing cost of the power converter 1 can be reduced. Moreover, the X direction length of the power converter device 1 can be shortened, and the power converter device 1 can be reduced in size.

Further, as described above in this example, the smoothing capacitor 2c, a semiconductor module 2m _i inverter constituting the first inverter circuit 111, disposed between the inverter semiconductor module 2m _i constituting the second inverter circuit 112 doing. Therefore, the distance from the inverter semiconductor module 2m _i constituting the first inverter circuit 111 to the smoothing capacitor 2c and the distance from the inverter semiconductor module 2m _i constituting the second inverter circuit 112 to the smoothing capacitor 2c are approximately Can be even. Therefore, the bus bar 4p, an inductance parasitic to 4n, can be made uniform for the semiconductor module 2m _i for each inverter. Therefore, when operating the power conversion apparatus 1 can be suppressed only large surge applied to the part of the semiconductor module 2m _i inverter.
In addition, the configuration and operational effects similar to those of the first embodiment are provided.

( Reference Example 3 )
In this example, the number of electronic components 2 is changed. 7, as shown in FIG. 8, the power converter 1 of the present embodiment comprises a single smoothing capacitor 2c, a semiconductor module 2m _i for three inverters, a semiconductor module 2m _b for one boost. As shown in FIG. 8, by the semiconductor module 2m _i for one smoothing capacitor 2c and three inverters, and an inverter circuit 11. The inverter circuit 11 is connected to one three-phase AC motor 81.

  Further, as shown in FIG. 7, in the same manner as in the first embodiment, in this example, the component group 5 is configured by the semiconductor module 2m and the smoothing capacitor 2c. A plurality of electronic components 2 (2m, 2c) constituting the component group 5 are arranged adjacent to each other via the cooling pipe 3.

  With the above configuration, the semiconductor module 2m and the smoothing capacitor 2c can be brought close to each other as in the first embodiment. Therefore, a portion of the bus bar 4 (4p, 4n) that connects the semiconductor module 2m and the smoothing capacitor 2c can be shortened, and inductance that is parasitic on the portion can be reduced. Therefore, it is possible to suppress a large surge from occurring when the semiconductor module 2m is turned on / off.

DESCRIPTION OF SYMBOLS 1 Power converter 10 Laminate 2 Electronic component 21 Semiconductor element 2m Semiconductor module 2c Smoothing capacitor 2r Reactor 2f Filter capacitor 3 Cooling pipe 4 Bus bar 5 Electronic component group

Claims (2)

A plurality of electronic components (2);
A plurality of cooling pipes (3) for cooling the electronic component (2);
A bus bar (4) for electrically connecting the plurality of electronic components (2) to each other;
The electronic component (2) and the cooling pipe (3) are laminated to form a laminate (10),
A booster circuit (12) that boosts the voltage of the DC power supply (8) by the plurality of electronic components (2), and a first inverter circuit that converts the DC power boosted by the booster circuit (12) into AC power Two inverter circuits (11) of (111) and a second inverter circuit (112) are formed,
The electronic component (2) includes a plurality of semiconductor modules (2m) containing a semiconductor element (21), and a first smoothing capacitor (2c _a ) and a second smoothing capacitor ( 2m) connected to the semiconductor module (2m). and 2c _b) and two smoothing capacitors (2c), a reactor (2r) constituting the booster circuit (12), there is a filter connected to the reactor (2r) capacitor (2f),
The semiconductor module (2m) and the smoothing capacitor (2c) constitute a component group (5),
The plurality of electronic components (2, 2m, 2c) constituting the component group (5) are arranged adjacent to each other via the cooling pipe (3) ,
The semiconductor module (2m) includes a plurality of first inverter semiconductor modules that constitute the first inverter circuit (111) and are arranged in the stacking direction (X) of the stacked body (10), and the second inverter. A plurality of second inverter semiconductor modules constituting the circuit (112) and arranged in the stacking direction (X), and the boost semiconductor module (2m _b ) constituting the boost circuit (12) together with the reactor (2r ) And
In the stacking direction (X), the first smoothing capacitor (2c _a ), the boosting semiconductor module (2m _b ), the plurality of first inverter semiconductor modules, and the second smoothing capacitor (2c _b ). And the plurality of second inverter semiconductor modules are arranged in this order . The reactor (2r), relative to the first smoothing capacitor (2c _a), the side which arranged the step-up semiconductor module (2m _b) in the lamination direction (X) a side opposite to the cooling 2. The power conversion device (1) according to claim 1 , wherein the power conversion device (1) is arranged adjacent to each other via a pipe (3 ).

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