JP6313983B2 - Plasma processing apparatus and plasma processing method - Google Patents

Description

  The present invention relates to a plasma processing apparatus and a plasma processing method, and more particularly to a plasma processing apparatus and a plasma processing method that can adjust the temperature of a sample stage to a temperature suitable for processing a sample.

  As an example of the plasma processing apparatus, there is a plasma etching apparatus. In this plasma etching apparatus, a wafer is mounted on a sample stage, and a film formed on the wafer is etched using a photoresist film as a mask to process the film into a desired shape.

  For example, in Patent Document 1 (Japanese Patent Laid-Open No. 2002-231421), the degree of curing of the cured resin on the semiconductor wafer is made uniform using a ceramic heater that can easily control the amount of heat generation. Technology is disclosed.

JP 2002-231421 A

  The present inventor is engaged in the development of a plasma processing apparatus such as a plasma etching apparatus. In the process, it was found that, during the etching process, the temperature of the wafer became non-uniform, resulting in variations in the processed shape of the film, and further, the variation increased as the wafer diameter increased.

  Other problems and novel features will become apparent from the description of the specification and the accompanying drawings.

  The outline of the configuration shown in the typical embodiment disclosed in the present application will be briefly described as follows.

  A plasma processing apparatus shown in a typical embodiment disclosed in the present application places a substrate on a sample stage arranged in a processing chamber and processes the substrate using plasma formed in the processing chamber. This plasma processing apparatus is provided inside a sample stage, and is connected to a first heater having two or more heater resistors connected in series, and to both ends of two or more heater resistors connected in series. And two or more bypass circuits, each of the two or more heater resistors being connected in parallel.

  According to the typical embodiment, the processing accuracy of the plasma processing apparatus can be improved. In addition, it is possible to provide a plasma processing method with high processing accuracy.

1 is a cross-sectional view showing an outline of a configuration of a plasma processing apparatus according to a first embodiment. 2 is a cross-sectional view showing a configuration of a sample stage according to Embodiment 1. FIG. It is a top view which shows the resistor for heaters which comprises a heater. It is sectional drawing which shows the structure of the heater 205c typically. It is a top view which shows typically the structure of the heater 205c. It is sectional drawing which shows the structure of the heater 205b typically. It is a top view which shows typically the structure of the heater 205b. It is sectional drawing which shows the structure of the heater 205a typically. It is a top view which shows typically the structure of the heater 205a. It is a top view of a wafer. It is a graph which shows the relationship between the wiring width of a 1st wafer, and the area | region of a wafer. It is a graph which shows the relationship between the wiring width of a 2nd wafer, and the area | region of a wafer. FIG. 6 is a plan view schematically showing a configuration of a heater 205c in a second embodiment.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiments, and the repetitive description thereof will be omitted.

(Embodiment 1)
FIG. 1 is a cross-sectional view schematically showing the configuration of the plasma processing apparatus of the present embodiment. This plasma processing apparatus is an etching processing apparatus that forms plasma (microwave ECR plasma) using ECR (Electron Cyclotron Resonance) using microwaves.

  A plasma processing apparatus 100 shown in FIG. 1 includes a vacuum vessel 101, an electromagnetic field supply unit that is arranged on the outer periphery of the vacuum vessel 101 and supplies an electric field and a magnetic field to the inside of the vacuum vessel 101, and is arranged below the vacuum vessel 101. 101 is provided with exhaust means for exhausting the inside.

  The electromagnetic wave supply means includes a radio wave source (magnetron) 104 that generates radio waves, a waveguide 105 that guides the generated radio waves to the processing chamber 103, a resonator (enlarged waveguide portion) 106 that is connected to the waveguide 105, resonance And a solenoid coil (magnetic field generating coil) 113 disposed so as to surround the upper portion of the vacuum vessel 101.

  The radio wave source 104 generates radio waves having a predetermined frequency such as microwaves and UHF waves. Although there is no limitation on the frequency, in this embodiment, a microwave with a frequency of 2.45 GHz is used. The waveguide 105 is connected to the radio wave source 104 and the resonator 106, and propagates the radio wave generated by the radio wave source 104 and guides it into the resonator 106.

  The resonator 106 has a cylindrical shape, and is connected to the waveguide 105 at the upper center of the resonator 106. A resonance chamber 106 a that is a resonance space of the resonator 106 is disposed directly above the processing chamber 103 through the window member 114. As described above, a plurality of ring-shaped solenoid coils 113 are arranged so as to surround the upper portion of the vacuum vessel 101 and the outer periphery of the resonator 106.

  The vacuum container 101 includes a window member 114, a shower plate 115, a processing chamber 103, and a sample table (also referred to as a sample mounting table or a stage) that is disposed below the processing chamber 103 and on which a sample is placed and held. 107). The processing chamber 103 is a space defined by the outer wall of the vacuum vessel 101, the window member 114, and the shower plate 115, and is a space where plasma is formed. A seal member (not shown) is sandwiched between the outer wall of the vacuum vessel 101 and the outer peripheral edge of the window member 114, and the space between the inside of the processing chamber 103 and the external atmospheric pressure is hermetically sealed. ing. The processing chamber 103 is located immediately below the resonance chamber 106a, and the processing chamber 103 and the sample stage 107 are arranged so that the central axes thereof coincide.

  The window member 114 is made of a dielectric material, for example, disc-shaped quartz or the like. The window member 114 constitutes the bottom surface of the resonance chamber 106 a and airtightly partitions between the resonance chamber 106 a and the processing chamber 103. The shower plate 115 is made of a dielectric material, for example, has a disk shape made of quartz or the like, and is provided with a plurality of through holes in the center. The shower plate 115 is arranged below the window member 114 so as to overlap the window member 114 with a predetermined interval (not shown). The shower plate 115 constitutes the ceiling surface of the processing chamber 103. The shower plate 115 is disposed to face the upper surface of the sample stage 107. Between the window member 114 and the shower plate 115, a passage for supplying a processing gas supplied from a gas source (not shown) is provided.

  The sample stage 107 is supported inside the vacuum vessel 101 by a plurality of beams (not shown) extending in the horizontal direction. The beam is arranged around the central axis of the sample stage 107 so as to be an axis object.

  As will be described later, the sample stage 107 includes a base material part (200) made of metal or the like and a dielectric film part (also referred to as a coating film, 202) joined to the upper surface of the base material part (200).

  The sample stage 107 (base material part 200) is connected to the bias power source 108 via the matching circuit MC. The bias power source 108 supplies high-frequency power to the sample stage 107 to form a bias potential above the wafer (substrate) W. The matching circuit MC is disposed inside the sample stage 107 and is electrically connected to the bias power source (209) to control the residual reflected wave with respect to the high frequency power supplied to the base part (200) that operates as an electrode, This is a circuit for controlling the impedance, phase, or peak-to-peak voltage (Vp-p) of the supply path constituting the high-frequency circuit.

  The sample stage 107 is connected to a heater power source 109 via a filter F. The heater power supply 109 is a DC power supply and is connected to heaters (205a, 205b, 205c) described later. By connecting via the filter (high frequency filter circuit) F, it is possible to prevent the high frequency power from the bias power source 108 from being supplied to the heater and the amount of heat generated from deviating from a predetermined range.

  The sample stage 107 is connected to a temperature controller (refrigerant temperature controller) 111. The temperature controller 111 can control the temperature of the refrigerant in the refrigerant passage (203) in the sample stage 107. The temperature of the wafer W is controlled by the heater and the refrigerant. Moreover, the sample stage 107 is connected with the gas supply part 116 through the through-hole (213).

  Further, the sample stage 107 is connected to the electrostatic adsorption power source 110. The electrostatic attraction power source 110 is a DC power source. When electric power is supplied from the electrostatic attraction power source 110 to the electrostatic attraction electrode (201) in the sample stage 107 (potential is applied), the dielectric film portion (202) of the sample stage 107 and above The electric charge formed in the wafer W is polarized and an electrostatic force is generated. By this electrostatic force, the wafer W is attracted and held by the dielectric film portion (202) of the sample stage 107.

  Below the vacuum vessel 101, a vacuum pump (vacuum exhaust device) 102 such as a turbo molecular pump as exhaust means is disposed and communicated with an opening (exhaust port) 117. The opening 117 is circular, and is disposed immediately below the sample stage 107 below the processing chamber 103 inside the vacuum vessel 101. Note that the processing chamber 103, the sample stage 107, and the opening 117 are arranged side by side so that their central axes coincide. Although not shown, between the vacuum pump 102 and the opening 117, there are a plurality of plate shapes and a flap that rotates around an axis that extends in a direction crossing the opening 117. The degree of opening of the opening 117, for example, the area of the opening, can be adjusted by the rotation of the flap. By this adjustment, the flow rate and outflow speed of the gas and particles inside the processing chamber 103 flowing out from the opening 117 can be adjusted. In the present embodiment, the degree of the opening is adjusted in accordance with a command signal from the control device 112, and the flow rate and inflow speed of the processing gas supplied through the passage and the through hole of the shower plate 115 are further adjusted. As a result, the pressure inside the processing chamber 103 is adjusted within a desired range.

  The bias power source 108, the heater power source 109, the electrostatic adsorption power source 110, and the temperature controller 111 are connected to a control device (also referred to as a controller or a control unit) 112.

The configuration of the sample stage 107 on which the wafer W is mounted will be described in more detail with reference to FIG. FIG. 2 is a cross-sectional view showing the configuration of the sample stage of the present embodiment. The sample stage 107 includes a base material part 200 and a dielectric film part 202 arranged to be bonded to the upper surface of the base material part 200. The base material portion 200 has, for example, a cylindrical shape or a disk shape having two or more shoulder portions, and is made of a metal such as Ti, ceramic-containing aluminum, molybdenum, or tungsten. Here, the outer periphery of the metal part is covered with an insulating film (dielectric film) 200a. The dielectric film portion 202 has, for example, a cylindrical shape or a disk shape having two or more shoulder portions, and here is formed of a laminated film of a lower dielectric film 202a and an upper dielectric film 202b. . As the dielectric material, Al ₂ O ₃ , Y ₂ O _3, or the like can be used.

  The base part 200 of the sample stage 107 is connected to the bias power source 108 via a matching circuit (MC). The bias power source 108 is for supplying high-frequency power to the sample stage 107 to form a bias potential above the wafer W. The high-frequency bias power supplied from the bias power source 108 has a frequency in the range of several hundred Hz to 50 MHz, and more preferably in the range of 400 Hz to 40 MHz. The bias power source 108 is electrically connected to the ground and grounded (see FIG. 1). The bias power supply 108 and the matching circuit (MC) are communicably connected to the control device 112 through communication means, and are controlled by the control device 112. That is, the bias power supply 108 and the matching circuit (MC) receive a command signal from the control device 112, perform an operation according to the command signal, and transmit the operation state to the control device 112 as a transmission signal.

  Further, a coolant passage (cooling hole) 203 is provided in the base material portion 200 of the sample stage 107. The refrigerant passage 203 is arranged in a spiral shape or a concentric multiple arc shape around the center of the base material portion 200. The refrigerant passage 203 has an inlet and an outlet connected to a refrigerant pipe (not shown). The refrigerant pipe is disposed on the lower surface of the base material part 200 and connected to the temperature controller 111. This temperature controller 111 is connected to and controlled by the control device 112. The temperature controller 111 controls the temperature of the refrigerant in the refrigerant passage 203 via the refrigerant pipe. A temperature sensor 210 is provided on the dielectric film portion 202 of the sample stage 107. This temperature sensor 210 is connected to the control device 112.

  An electrostatic adsorption electrode 201 is provided inside the dielectric film portion 202 of the sample stage 107. The electrostatic chucking electrode 201 is connected to the electrostatic chucking power source 110 via a filter (high-frequency filter circuit, not shown). The electrostatic attraction power source 110 is connected to and controlled by the control device 112. In a state where the wafer W is placed on the sample stage 107, power from the electrostatic attraction power source 110 is supplied to the electrostatic adsorption electrode 201, and the dielectric film portion 202 on the surface of the sample stage 107 and the inside of the wafer W are supplied. An electrostatic force is generated by the polarization of charges formed on the substrate. With this electrostatic force, the wafer W is attracted to the upper surface of the dielectric film portion 202 and held on the sample stage 107.

  In addition, a through hole 213 is provided in the sample stage 107 (base material part 200 and dielectric film part 202). The through hole 213 is connected to the gas supply unit 116. For example, helium gas or the like can be introduced from the gas supply unit 116 through the through hole 213 into a recess provided in the upper part of the sample stage 107 (dielectric film unit 202).

  In addition, a through hole 214 is provided in the sample stage 107 (base material part 200 and dielectric film part 202). A pin 215 is disposed inside the through hole 214. By moving the pins 215 up and down relative to the sample stage 107, the wafer W can be transferred.

  Next, a processing step (etching step) using the plasma processing apparatus shown in FIGS. 1 and 2 will be described.

  In the plasma processing apparatus of the present embodiment, the wafer W is transferred into the processing chamber 103 by a transfer unit (not shown), and after introducing a processing gas into the processing chamber 103, plasma is generated in the processing chamber 103, The wafer is processed by the generated plasma.

  For example, the inside of the processing chamber 103 is evacuated and decompressed by the vacuum pump 102. At this time, the wafer W is transferred onto the sample stage 107 through a gate (not shown) by a transfer means such as a robot arm (not shown), and is placed on the dielectric film part 202 constituting the mounting surface of the sample stage 107. After the wafer W is transferred onto the sample stage 107, a transfer means such as a robot arm moves out of the processing chamber 103 into the transfer container, and the gate is hermetically closed by a gate valve (not shown). Next, electric power is supplied from the electrostatic attraction power source 110 to the electrostatic attraction electrode 201 in the dielectric film portion 202 to form an electrostatic force, and the wafer W is placed on the sample stage 107 (dielectric material) on which the electrostatic force is formed. Adsorbed and held on the film part 202).

  After the wafer W is held on the sample stage 107, processing gas is introduced into the processing chamber 103 from a gas source (not shown) through the through hole of the shower plate 115. The pressure inside the processing chamber 103 is adjusted to a predetermined range by the balance between the flow rate of the processing gas and the exhaust due to the operation of the vacuum pump 102.

  After supplying the processing gas, the radio wave source 104 generates radio waves. The generated radio wave propagates through the waveguide 105 and is guided to the resonator 106. The propagated radio wave resonates in the resonance chamber 106a and forms an electric field having a predetermined intensity. This electric field passes through the window member 114 and the shower plate 115 and reaches the processing chamber 103.

  A current is supplied to the solenoid coil 113, and a magnetic field is formed in the processing chamber 103. This magnetic field is formed inside the processing chamber 103 so as to spread from top to bottom and downward. In addition, this magnetic field is shaped as an object around the central axis of the solenoid coil 113 arranged in a cylindrical shape. The magnetic field intensity of the solenoid coil 113 is adjusted so that plasma can be efficiently formed in the processing chamber 103 in accordance with the 2.45 GHz electric field oscillated by the radio wave source 104.

  The electric field propagating through the waveguide 105 and entering the resonator 106 is resonated in a predetermined electric field mode. The electric field in this mode passes through the window member 114 and the shower plate 115 and is introduced into the space above the sample stage 107 inside the processing chamber 103. The microwave electric field introduced into the processing chamber 103 generates plasma in the processing chamber 103 by exciting the processing gas (etching gas) supplied to the processing chamber 103 by interaction with the magnetic field generated by the solenoid coil 113. Let The processing gas is excited by the interaction between the electric field and the magnetic field thus formed, and plasma is formed in the space above the sample stage 107 holding the wafer W in the processing chamber 103. Processing (in this embodiment, etching) is performed using this plasma.

  That is, high frequency power is supplied from the bias power source 108 to the sample stage 107. As a result, a predetermined potential difference is formed between the sample stage 107 and the plasma above the wafer W. Then, the charged particles in the plasma are attracted to and collide with the surface of the wafer W according to the potential difference between the bias potential and the plasma potential, so that an anisotropic etching process of the film to be processed on the wafer W is performed. Promoted. In this way, processing can be performed by causing a physical and chemical reaction to occur in the film to be processed on the surface of the wafer using plasma.

  When the end point of the process (here, etching) is detected by the control device 112, the high frequency power for bias from the bias power supply 108 is stopped, and the process ends when the plasma disappears. Next, the power supply from the electrostatic attraction power supply 110 is stopped, or the electric charge of the wafer W is neutralized by supplying power with the polarity reversed (static elimination step). Thereafter, the wafer lift pins (pusher pins, lifting means) 215 are raised, and the wafer W is lifted above the sample stage 107.

  Next, the gate valve is opened, and a transfer means such as a robot arm enters the processing chamber 103 through the gate, and the arm is extended to receive the wafer W at its tip (also referred to as a hand or holding unit). And the wafer W is carried out of the processing chamber 103. When the control device 112 determines that the processing of the wafer W in the processing chamber 103 is completed, the gate valve keeps the gate hermetically closed in accordance with a command from the control device 112 until the next wafer W is loaded. To do. After the wafer W is unloaded, the next wafer W may be loaded into the processing chamber 103 by the robot arm with the gate open.

  In the present embodiment, plasma generation uses ECR based on the interaction between an electric field and a magnetic field generated by a microwave. However, the plasma generation is not limited to ECR, and electrostatic coupling means or inductive coupling means using high frequencies. Plasma generating means using can also be used.

  In the processing step (etching step), the temperature of the wafer W held on the sample stage 107 can be adjusted by operating a heater or a temperature controller. In particular, in the present embodiment, by providing a bypass circuit in parallel with the heater resistor (heater electrode) constituting the heater, the wafer temperature can be adjusted with high accuracy.

  Hereinafter, the configuration of the heater will be described in detail. As shown in FIG. 2, three heaters (205a, 205b, 205c) are provided inside the dielectric film portion 202 (upper dielectric film 202b) of the sample stage 107. Each heater has a plurality of heater resistors. FIG. 3 is a plan view showing a heater resistor constituting the heater.

  The heater 205c includes heater resistors 205c1, 205c2, 205c3, and 205c4. The heater 205b includes heater resistors 205b1, 205b2, and 205b3. The heater 205a includes heater resistors 205a1, 205a2, and 205a3. As will be described later, the heater resistor has an arc shape. The heater resistor is made of a conductive material. As the conductive material, tungsten, nickel-chromium alloy, nickel-aluminum alloy, or the like can be used. Moreover, you may use what mixed the suitable additional metal with these materials. In particular, it is preferable to use a material that can easily control the low efficiency by adjusting the ratio of the metal constituting the alloy, the ratio of the added metal, and the like. The heater resistor can be formed, for example, by thermal spraying on the upper part of the dielectric layer constituting the dielectric film portion 202. A dielectric layer is further formed on the heater resistor. This dielectric layer can also be formed by thermal spraying. Specifically, a dielectric layer is sprayed on the upper surface of the base material portion 200 and polished so that a predetermined flatness is obtained in the dielectric layer. Next, a heater resistor is formed on the upper surface of the dielectric layer by thermal spraying using a mask so as to have the above shape. Next, by removing the heater resistor, the film thickness is adjusted so that the heat generation amount per unit area becomes equal. Next, a dielectric layer is further formed by thermal spraying so as to cover the surface of the heater resistor, and the flatness is adjusted. The electrostatic chucking electrode (201) and the upper dielectric layer can be formed in the same manner.

  The heater 205a (heater resistors 205a1, 205a2, and 205a3) is provided in a region (inner region) Aa that is a central portion of the dielectric film portion 202 having a circular planar shape, and the heater 205b is a region that is located outside thereof. (Intermediate region) provided in Ab, and heater 205c is provided in a region (outer region) Ac located outside region Ab. Here, the region Ac is the outermost periphery. In other words, each of the three heaters (205a, 205b, 205c) is centered on the center of the circular plane region of the dielectric film portion 202 (hereinafter simply referred to as the center of the dielectric film portion 202). It arrange | positions in order from the inner side in the some area | region (Aa, Ab, Ac) divided by the concentric circle from which a radius differs.

  As described above, the heater 205c is disposed on the outermost periphery of the circular planar region of the dielectric film portion 202, and includes the four heater resistors 205c1, 205c2, 205c3, and 205c4. The heater resistors (205c1, 205c2, 205c3 and 205c4) are provided along an arc having a radius Rc and a central angle θc from the center of the dielectric film portion 202, and have a predetermined width. The central angle θc is about 90 °. Each of the heater resistors 205c1, 205c2, 205c3 and 205c4 is electrically connected in series by a conductive portion C. As the conductive portion C, a material having a low resistance, for example, a material having a resistance lower than that of the heater resistors 205c1, 205c2, 205c3, and 205c4 is used.

  The heater 205b is disposed inside the outermost region Ac of the circular plane region of the dielectric film portion 202 and outside the central region Aa, that is, in the region Ab between the region Ac and the region Aa. Two heater resistors 205b1, 205b2, and 205b3 are provided. The heater resistors (205b1, 205b2, and 205b3) are provided along an arc having a radius Rb and a central angle θb from the center of the dielectric film portion 202, and have a predetermined width. The central angle θc is about 120 °. Radius Rb <radius Rc, and center angle θb> center angle θc. The heater resistors 205b1, 205b2, and 205b3 are electrically connected in series by the conductive portion C. As the conductive portion C, a material having a low resistance, for example, a material having a lower resistance than the heater resistors 205b1, 205b2, and 205b3 is used.

  The heater 205a is disposed in the central area Aa of the circular planar area of the dielectric film portion 202, and includes three heater resistors 205a1, 205a2, and 205a3. Among them, the heater resistor 205 a 1 is provided in a circular shape with a radius Ra 1 from the center of the dielectric film portion 202, and the heater resistors 205 a 2 and 205 a 3 have a radius Ra 2 and a center angle θa from the center of the dielectric film portion 202. And having a predetermined width. The central angle θa is about 180 °. Radius Ra1 <radius Ra2 <radius Rb, and center angle θa> center angle θb. Each of the heater resistors 205a1, 205a2 and 205a3 is electrically connected in series by a conductive portion C. As the conductive portion C, a material having a low resistance, for example, a material having a resistance lower than that of the heater resistors 205a1, 205a2, and 205a3 is used.

  Thus, in the present embodiment, three heaters (205a, 205b, 205c) are arranged concentrically, and each heater has a plurality of arc-shaped heater resistors connected in series. Here, by reducing the central angle of the arc-shaped heater resistor arranged in the region with the larger radius, the temperature control in the region with the larger radius can be performed finely.

  A heater power supply 109 is connected to both ends of the plurality of heater resistors connected in series. Each of the plurality of heater resistors connected in series is provided with a bypass circuit in parallel (see FIGS. 4 to 9). The bypass circuit has a current control element. The bypass circuit may be configured by a single current control element (for example, a variable resistor) or may be configured by combining a plurality of elements. Further, the configuration of the bypass circuit may be different for each heater. The current control element used in the bypass circuit is not particularly limited as long as it is an element capable of adjusting the amount of current. For example, a current control element and a circuit in which a diode and a coil or a variable resistance element are electrically connected in series or in parallel are electrically connected. One element or a plurality of elements equivalent to each other can be used.

  Note that the heater resistor and the heater power source 109 are electrically connected via a connector and a cable. That is, a heater power connector (not shown) connected to both ends of the heater resistor is provided on the back side of the sample stage 107, and this connector is connected to one end of the cable. The end is connected to the heater power supply 109. Similarly, on the back side of the sample stage 107, connectors for bypass circuits (not shown) connected to both ends (first end and second end) of the heater resistor are provided. The heater resistor and the bypass circuit are connected to each other through a cable.

  A temperature sensor 210 is provided for each of the plurality of heater resistors connected in series. Hereinafter, it will be described in detail with reference to FIGS. 4 is a cross-sectional view schematically showing the configuration of the heater 205c, and FIG. 5 is a plan view schematically showing the configuration of the heater 205c.

  As shown in FIGS. 4 and 5, the heater (outer heater) 205c includes four heater resistors 205c1, 205c2, 205c3, and 205c4. The heater resistors 205c1 and 205c2 are connected by the conductive portion C, the heater resistors 205c2 and 205c3 are connected by the conductive portion C, and the heater resistors 205c3 and 205c4 are connected by the conductive portion C. The The heater resistor 205c1 is connected to the first end of the heater power supply 109c, and the heater resistor 205c4 is connected to the second end of the heater power supply 109c. A bypass circuit 300c1 is connected in parallel to both ends of the heater resistor 205c1, a bypass circuit 300c2 is connected in parallel to both ends of the heater resistor 205c2, and a bypass circuit is connected to both ends of the heater resistor 205c3. 300c3 is connected in parallel, and a bypass circuit 300c4 is connected in parallel to both ends of the heater resistor 205c4. Each bypass circuit 300c1, 300c2, 300c3 and 300c4 is connected to a bypass control device 301c. The bypass control device 301c constitutes a part of the control device 112. Further, a temperature sensor 210c1 is disposed on the back surface side of the central portion of the heater resistor 205c1, and a temperature sensor 210c2 is disposed on the back surface side of the central portion of the heater resistor 205c2, and the heater resistor 205c3 A temperature sensor 210c3 is disposed on the back surface side of the central portion, and a temperature sensor 210c4 is disposed on the back surface side of the central portion of the heater resistor 205c4. Each temperature sensor 210c1, 210c2, 210c3, and 210c4 is connected to the control device 112.

  FIG. 6 is a cross-sectional view schematically showing the configuration of the heater (intermediate heater) 205b, and FIG. 7 is a plan view schematically showing the configuration of the heater 205b.

  As shown in FIGS. 6 and 7, the heater 205b has three heater resistors 205b1, 205b2, and 205b3. The heater resistors 205b1 and 205b2 are connected by the conductive portion C, and the heater resistors 205b2 and 205b3 are connected by the conductive portion C. The heater resistor 205b1 is connected to the first end of the heater power supply 109b, and the heater resistor 205b3 is connected to the second end of the heater power supply 109b. A bypass circuit 300b1 is connected in parallel to both ends of the heater resistor 205b1, a bypass circuit 300b2 is connected in parallel to both ends of the heater resistor 205b2, and a bypass circuit is connected to both ends of the heater resistor 205b3. 300b3 are connected in parallel. Each bypass circuit 300b1, 300b2, and 300b3 is connected to a bypass control device 301b. The bypass control device 301b constitutes a part of the control device 112. Further, the temperature sensor 210b1 is disposed on the back surface side of the central portion of the heater resistor 205b1, and the temperature sensor 210b2 is disposed on the back surface side of the central portion of the heater resistor 205b2, and the heater resistor 205b3 A temperature sensor 210b3 is disposed on the back side of the central portion. Each temperature sensor 210b1, 210b2, and 210b3 is connected to the control device 112.

  FIG. 8 is a cross-sectional view schematically showing the configuration of the heater (inner heater) 205a, and FIG. 9 is a plan view schematically showing the configuration of the heater 205a.

  As shown in FIGS. 8 and 9, the heater 205a has three heater resistors 205a1, 205a2, and 205a3. The heater resistors 205a1 and 205a2 are connected by a conductive portion C, and the heater resistors 205a2 and 205a3 are connected by a conductive portion C. The heater resistor 205a1 is connected to the first end of the heater power supply 109a, and the heater resistor 205a3 is connected to the second end of the heater power supply 109a. A bypass circuit 300a1 is connected in parallel to both ends of the heater resistor 205a1, a bypass circuit 300a2 is connected in parallel to both ends of the heater resistor 205a2, and a bypass circuit is connected to both ends of the heater resistor 205a3. 300a3 are connected in parallel. Each bypass circuit 300a1, 300a2, and 300a3 is connected to a bypass control device 301a. This bypass control circuit forms part of the control device 112. Further, a temperature sensor 210a1 is disposed on the back surface side of the central portion of the heater resistor 205a1, and a temperature sensor 210a2 is disposed on the back surface side of the central portion of the heater resistor 205a2, and the heater resistor 205a3 A temperature sensor 210a3 is disposed on the back side of the central portion. The temperature sensors 210a1, 210a2, and 210a3 are connected to the control device 112.

  Next, a method for controlling the temperature of the wafer W (dielectric film unit 202) using a heater will be described.

  First, temperature control of the heater 205c will be described (see FIGS. 4 and 5). The current supplied to one connector flows through the heater resistor 205c and the bypass circuit (current control element) 300c connected in parallel. The heater 205c has four heater resistors 205c1, 205c2, 205c3, and 205c4, and the value of the current flowing through each heater resistor depends on the operation of the bypass circuits (current control elements) 300c1, 300c2, 300c3, and 300c4. Adjusted. That is, the bypass circuits (current control elements) 300c1, 300c2, 300c3, and 300c4 variably increase / decrease the amount of current flowing therethrough, so that the heater resistors 205c1, 205c2, 205c3, 205c4 connected in parallel therewith are bypassed. Increase or decrease the amount of current flowing through The operations of the bypass circuits (current control elements) 300c1, 300c2, 300c3, and 300c4 are adjusted based on the resistance value or impedance value in the bypass circuit (current control element) calculated by the arithmetic unit of the bypass control device 301c. For example, the control device 112 is based on the output from the temperature sensors (210c1 to 210c4) disposed in the dielectric film part 202 below the central part (intermediate angular position) of the four heater resistors 205c1 to 205c4. Thus, the power to be supplied from the heater power supply 109c to the heater 205c (four heater resistors 205c1 to 205c4 connected in series) is set. At this time, for each heater resistor (205c1, 205c2, 205c3, 205c4) of the heater 205c, the bypass control device 301c sets a position corresponding to the heater resistor on the wafer W placed thereon to a desired temperature. Calculate the amount of power that can be generated. Then, the amount of power supplied to each of the heater resistors (205c1, 205c2, 205c3, 205c4) is determined based on the heater resistor having the maximum amount of power per unit area among these heater resistors. calculate. In response to a command from the control device 112, the heater power supply 109c supplies the calculated electric energy to the four heater resistors 205c1, 205c2, 205c3, and 205c4 connected in series.

  The amount of power supplied by the heater power supply 109c to the reference heater resistor is adjusted to be a constant value or a value within a predetermined range based on a command from the bypass control device 301c. Specifically, the bypass control device 301c is connected in parallel to each of the heater resistors 205c1, 205c2, 205c3, and 205c4 so that the set temperature is calculated in consideration of various conditions before processing. A current that flows to bypass circuits (current control elements) 300c1, 300c2, 300c3, and 300c4 is set. However, it is set so that no current flows in the bypass circuit (current control element) connected in parallel to the reference heater resistor. The bypass control device 301c sends a command to a bypass circuit (current control element) of a heater resistor other than the reference heater resistor so as to realize a resistance value through which the set current flows.

  As an example of the control, for example, when the detected temperatures of the temperature sensors 210c1, 210c2, 210c3 and 210c4 are Tc1 <Tc2 <Tc3 <Tc4, the heater resistor 205c1 is based on the lowest temperature, Tc1. The amount of power supplied by the heater power supply 109c is set so that the set temperature is reached. At this time, the heater resistors 205c2, 205c3, and 205c4 having a high temperature are supplied with an excessive amount of power that reaches the set temperature. Therefore, the resistance values (Rc1, Rc2, Rc3, Rc4) of the bypass circuits (current control elements) 300c1, 300c2, 300c3, and 300c4 are adjusted as Rc1> Rc2> Rc3> Rc4. As a result, the current values (Ic1, Ic2, Ic3, Ic4) flowing through the bypass circuits (current control elements) 300c1, 300c2, 300c3, and 300c4 are set to Ic1 = 0, Ic2 <Ic3 <Ic4. The temperatures of 205c1, 205c2, 205c3, and 205c4 can be adjusted uniformly.

  Next, temperature control of the heater 205b will be described (see FIGS. 6 and 7). The current supplied to one connector flows through the heater resistor 205b and the bypass circuit (current control element) 300b connected in parallel. The heater 205b has three heater resistors 205b1, 205b2, 205b3, and the value of the current flowing through each heater resistor is adjusted according to the operation of the bypass circuits (current control elements) 300b1, 300b2, 300b3. . That is, the bypass circuits (current control elements) 300b1, 300b2, and 300b3 variably increase / decrease the amount of current flowing therethrough, and flow to the heater resistors 205b1, 205b2, and 205b3 connected in parallel therewith. Increase or decrease the amount of current variably. The operations of the bypass circuits (current control elements) 300b1, 300b2, and 300b3 are adjusted based on the resistance value or impedance value in the bypass circuit (current control element) calculated by the arithmetic unit of the bypass control device 301b. For example, the control device 112 includes temperature sensors (210b1, 210b2, 210b3) disposed in the dielectric film portion 202 below the central portion (intermediate angular position) of the three heater resistors 205b1, 205b2, 205b3. Is set from the heater power source 109b to the heater 205b (three heater resistors 205b1, 205b2, 205b3 connected in series). At this time, for each heater resistor (205b1, 205b2, 205b3) of the heater 205b, the bypass control device 301b has a power that can bring a portion corresponding to the heater resistor of the wafer W placed thereon to a desired temperature. Calculate the amount. Then, the amount of power supplied to each of the heater resistors (205b1, 205b2, 205b3) is calculated based on the heater resistor having the maximum power amount per unit area among these heater resistors. . In response to a command from the control device 112, the heater power supply 109b supplies the calculated amount of power to the three heater resistors 205b1, 205b2, and 205b3 connected in series.

  The amount of electric power supplied by the heater power supply 109b to the reference heater resistor is adjusted to be a constant value within a predetermined range based on a command from the bypass control device 301b. . Specifically, in the bypass control device 301b, a bypass circuit connected in parallel to each of the heater resistors 205b1, 205b2, and 205b3 so that the set temperature is calculated in consideration of various conditions before processing. (Current control element) Currents to be supplied to 300b1, 300b2, and 300b3 are set. However, it is set so that no current flows in the bypass circuit (current control element) connected in parallel to the reference heater resistor. The bypass control device 301b transmits a command to a bypass circuit (current control element) of a heater resistor other than the reference heater resistor so as to realize a resistance value through which the set current flows.

  As an example of the control, for example, when the detected temperatures of the temperature sensors 210b1, 210b2, and 210b3 are Tb1 <Tb2 <Tb3, the heater temperature 205b1 becomes the set temperature with reference to Tb1, which is the lowest temperature. As described above, the amount of power supplied by the heater power supply 109b is set. At this time, the heater resistors 205b2 and 205b3 having higher temperatures are supplied with an excessive amount of electric power that reaches the set temperature. Therefore, the resistance values (Rb1, Rb2, Rb3) of the bypass circuits (current control elements) 300b1, 300b2, and 300b3 are adjusted as Rb1> Rb2> Rb3, and the current values (Ib1, Ib2) flowing through the bypass circuits 300b1, 300b2, and 300b3 are adjusted. , Ib3) is set so that Ib1 = 0 and Ib2 <Ib3. Thereby, the temperature of the heater resistors 205b1, 205b2, and 205b3 can be adjusted uniformly.

  Next, temperature control of the heater 205a will be described (see FIGS. 8 and 9). The current supplied to one connector flows through the heater resistor 205a and the bypass circuit (current control element) 300a connected in parallel. The heater 205a has three heater resistors 205a1, 205a2, and 205a3, and the value of the current that flows through each heater resistor is adjusted according to the operation of the bypass circuits (current control elements) 300a1, 300a2, and 300a3. . That is, the bypass circuits (current control elements) 300a1, 300a2, and 300a3 variably increase / decrease the amount of current flowing through the bypass circuits (current control elements) 300a1, 300a2, and 300a3 to flow through the heater resistors 205a1, 205a2, and 205a3 connected in parallel thereto. Increase or decrease the amount of current variably. The operations of the bypass circuits (current control elements) 300a1, 300a2, and 300a3 are adjusted based on the resistance value or impedance value in the bypass circuit (current control element) calculated by the arithmetic unit of the bypass control device 301a. For example, the control device 112 includes temperature sensors (210a1, 210a2, 210a3) disposed in the dielectric film portion 202 below the central portions (intermediate angular positions) of the three heater resistors 205a1, 205a2, 205a3. Is set from the heater power supply 109a to the heater 205a (three heater resistors 205a1, 205a2, 205a3 connected in series). At this time, for each heater resistor (205a1, 205a2, 205a3) of the heater 205a, the bypass control device 301a has a power that can bring a portion corresponding to the heater resistor of the wafer W placed thereon to a desired temperature. Calculate the amount. Then, the amount of electric power supplied to each of the heater resistors (205a1, 205a2, 205a3) is calculated based on the heater resistor having the maximum electric energy per unit area among these heater resistors. . In response to a command from the control device 112, the heater power supply 109a supplies the calculated electric energy to the three heater resistors 205a1, 205a2, and 205a3 connected in series.

  The amount of power supplied from the heater power supply 109a to the reference heater resistor is adjusted to be a constant value or a value within a predetermined range based on a command from the bypass control device 301a. Specifically, in the bypass control device 301a, a bypass circuit connected in parallel to each of the heater resistors 205a1, 205a2, and 205a3 so as to have a preset temperature calculated in consideration of various conditions before processing. (Current control element) Currents to be supplied to 300a1, 300a2, and 300a3 are set. However, it is set so that no current flows in the bypass circuit (current control element) connected in parallel to the reference heater resistor. The bypass control device 301a transmits a command to a bypass circuit (current control element) of a heater resistor other than the reference heater resistor so as to realize a resistance value through which the set current flows.

  As an example of control, for example, when the detected temperatures of the temperature sensors 210a1, 210a2, and 210a3 are Ta1 <Ta2 <Ta3, the heater resistor 205a1 is based on the lowest temperature (the lowest value) Ta1. Is set to the set temperature so that the amount of power supplied by the heater power supply 109a is set. At this time, the heater resistors 205a2 and 205a3 having higher temperatures are supplied with an excessive amount of electric power that reaches the set temperature. Therefore, the resistance values (Ra1, Ra2, Ra3) of the bypass circuits (current control elements) 300a1, 300a2, and 300a3 are adjusted as Ra1> Ra2> Ra3, and the current values (Ia1, Ia2) flowing through the bypass circuits 300a1, 300a2, and 300a3 are adjusted. , Ia3), let Ia1 = 0 and Ia2 <Ia3. Thereby, the temperature of the heater resistors 205a1, 205a2, and 205a3 can be adjusted uniformly.

  Thus, by adjusting the temperature of the heater resistor, the uniformity of the processed film can be increased in the wafer surface direction (radial direction, circumferential direction).

  In particular, at the outer peripheral portion of the wafer, it is difficult to come into contact with the sample stage due to warpage of the wafer, etc., and temperature adjustment by the sample stage becomes insufficient, and temperature variations tend to occur. For example, due to variations in cooling (heat transfer) in the circumferential direction of the wafer and variations in the amount of heat input from the plasma, variations in temperature at the outer peripheral portion of the wafer increase. Due to such temperature variations, the processing accuracy of the film to be processed decreases. For example, in a plasma etching process or the like, variations in processing dimensions (for example, wiring width) occur. In addition, such temperature variations become conspicuous when the outer peripheral length of the wafer becomes longer as the diameter of the wafer increases, and a reduction in processing accuracy becomes a serious problem in connection with miniaturization of elements.

  On the other hand, according to the present embodiment, the temperature of each heater resistor on the sample stage can be individually adjusted even if temperature variation occurs in the outer peripheral portion of the wafer, and the film to be processed The machining accuracy can be improved. Further, it is possible to easily cope with an increase in the wafer diameter simply by adjusting the arrangement of the heater resistors on the sample stage.

  In order to correct the temperature variation as described above, it is conceivable to individually control the amount of electric power supplied to each heater resistor on the sample stage. For example, it is conceivable to provide a heater power source at each end of each heater resistor. However, in such a configuration, when bias power is supplied to the sample stage in order to generate plasma in the processing chamber, the amount of leakage of high-frequency power increases due to an increase in the capacitance of the feeder line. For this reason, there is a possibility that the processing speed (for example, etching rate) of the wafer becomes non-uniform or electrostatic damage occurs on the film on the wafer.

  On the other hand, according to the present embodiment, it is possible to improve the processing accuracy of the film to be processed while avoiding the above problems.

  In addition, although the example which arrange | positions three heaters concentrically was shown here, you may provide four or more heaters concentrically. In the present embodiment, bypass circuits (current control elements) are formed in all heaters. However, bypass circuits (current control elements) are not necessarily formed in all heaters. For example, on the outer periphery of the wafer W, a temperature change is likely to occur according to the warp of the wafer W and the like, and it is preferable to provide a bypass circuit (current control element) in the heater provided on the outer peripheral portion of the wafer W. In the present embodiment, the temperature sensors are provided corresponding to all the heater resistors, but it is not always necessary to form the temperature sensors corresponding to all the heater resistors. The temperature distribution of the wafer W may be obtained by data of a single or two or three temperature sensors and simulation analysis of the temperature distribution. A temperature sensor may be provided outside the sample stage.

<Example>
Next, specific examples will be described. The bypass control device 301c shown in FIGS. 4 and 5 is a software program stored in advance in the internal storage device by an arithmetic unit inside the bypass control device 301c based on outputs from the temperature sensors 210c1, 210c2, 210c3 and 210c4. The amount of electric power per unit area corresponding to the heater resistors 205c1 to 205c4 is calculated using the temperature value calculated using the wear or algorithm. For example, the calculated values are 1.5 W / cm ² for the heater resistor 205 c 1, 1.4 W / cm ^{2 for} the heater resistor 205 c ² , 1.3 W / cm ^{2 for} the heater resistor 205 c ³ , The heater resistor 205c4 is assumed to be 1.6 W / cm ² .

In this case, the reference heater resistor corresponds to the heater resistor 205c4 having the largest amount of power per unit area. In this embodiment, the area of each heater resistor is 50 cm ² , but the area of each heater resistor may not be equal.

  In the heater 205c, when the power amount of the heater supplied by the heater power supply is 304 W, a bypass circuit (current control element) 300c1 corresponding to the reference heater resistor 205c4 is based on a command from the bypass control device 301c. The amount of current flowing through (Ic1) is set to 0A. The amounts of current (Ic2, Ic3, Ic4) flowing through the other bypass circuits (current control elements) 300c2, 300c3, 300c4 are set to 0.13A, 0.26A, and 0.39A, respectively.

  Thus, in the above embodiment, the value of the current flowing through the bypass circuit (current control element) corresponding to the reference heater resistor is set to 0 A, and the bypass control device 301c corresponds to the detected temperature of the temperature sensor. For each heater resistor, the amount of power consumed by the heater resistor is calculated so as to obtain a heat generation amount that achieves a predetermined temperature or a value close thereto. Then, the bypass control circuit sets a current value to be passed through a bypass circuit (current control element) connected in parallel with a heater resistor other than the reference, and instructs to realize this, whereby the temperature of the wafer W is set. Adjust. When the temperature distribution of the wafer W further changes with the progress of the process, a heater resistor serving as a reference is set again, and the bypass control device 301c is used for the heater according to the temperature detected by the temperature sensor. For each resistor, the amount of power consumed by the heater resistor is calculated so that the amount of heat generated achieves a predetermined temperature or a value close thereto. Then, the bypass control circuit sets a current value to be passed through a bypass circuit (current control element) connected in parallel with a heater resistor other than the reference, and instructs to realize this, whereby the temperature of the wafer W is set. Adjust.

  As described above, by adjusting the temperature of the wafer W, the density of plasma formed in the processing chamber 103 above the wafer W changes as the number of wafers W processed or the processing time increases. Even if a change occurs in the W temperature distribution, it can be corrected. As a result, the processing accuracy of the wafer W can be improved and stable processing can be performed. For example, in the plasma etching process, variations in processing dimensions (for example, wiring width) can be reduced.

  In this embodiment, the heater 205c has been described as an example, but the temperature of the wafer W can be controlled by adjusting the heaters 205b and 205a in the same manner.

(Embodiment 2)
In the example of the first embodiment, by using the temperature value, a bypass circuit (in parallel with other heater resistors) based on the heater resistor having the largest amount of power per unit area (reference) Although the value of the current passed through the current control element is set, the processing dimension (for example, the wiring width) of the film to be processed on the wafer W actually processed may be fed back prior to the next process.

  FIG. 10 is a plan view of the wafer W. FIG. Region A1 is the outer peripheral portion of wafer W and has a central angle in the range of 0 ° to 90 °, and region A2 is the outer peripheral portion of wafer W and has the central angle of 90 ° to 180 °. It is a range area. The region A3 is an outer peripheral portion of the wafer W and has a central angle in a range of 180 ° to 270 °. The region A4 is an outer peripheral portion of the wafer W and has a central angle of 270 ° to 360. It is an area in the range of °. FIG. 11 is a graph showing the relationship between the wiring width of the first wafer and the area of the wafer. That is, the relationship between the width of the wiring subjected to plasma etching and the region of the wafer is shown. The vertical axis represents the wiring width, and the horizontal axis represents the central angle (angle) of each region. As shown in FIG. 11, in the stage before performing the temperature control of the present embodiment, the direction of the angle 45 ° in the region A1 (angle 0 ° to 90 °) of the processed first wafer W. In FIG. 5, a wiring thinner than the allowable line width range Wa was confirmed.

  For example, the bypass control device 301c (control device 112) shown in FIG. 5 detects the processing shape for each region (A1 to A4) of the wafer W, and determines the line width of the wiring and the formation region of the heater resistor. Corresponding information (data) is stored and acquired in a storage device (storage unit).

  For example, in the wiring width (WA1 to WA4) of each region (A1 to A4), the wiring width WA1 is narrower than the line width range Wa, and the wiring widths WA2 to WA4 are the line widths within the range Wa to be allowed, When it is determined that WA1 <WA2 <WA3 <WA4, the heater resistor 205c4 corresponding to the thickest line width (maximum line width) among the heater resistors 205c1 to 205c4 shown in FIGS. 4 and 5 is used as a reference. Set as a heater resistor. Then, the amount of current (Ic2, Ic3, Ic4) flowing in the bypass circuits (current control elements) 300c2, 300c3, 300c4 corresponding to the other heater resistors is calculated based on a previously stored algorithm. Specifically, the amount of current (Ic4) flowing through the bypass circuit (current control element) 300c4 corresponding to the reference heater resistor 205c4 is set to 0A, and the other bypass circuits (current control elements) 300c1, 300c2, The amount of current (Ic1, Ic2, Ic3) flowing through 300c3 is set based on a function of the wiring width and temperature. For example, in correspondence with the wiring width (WA1, WA2, WA3), the wafer W is caused to flow through the bypass circuits (current control elements) 300c1, 300c2, 300c3 so that the temperature of the wafer W is lowered by 1 ° C., 0.5 ° C., and 0 ° C. Adjust the current.

  Thus, in the above embodiment, the value of the current flowing through the bypass circuit (current control element) corresponding to the reference heater resistor is set to 0A, and the other bypass circuits (current control elements) 300c1, 300c2, 300c3 Based on the function of the wiring width, the amount of current consumed (Ic1, Ic2, Ic3) is calculated based on the function of the wiring width. Thus, by adjusting the amount of heat generated by each heater resistor, the wiring width of the wiring formed in each region (A1 to A4) of the wafer W can be set within the desired range Wa. FIG. 12 is a graph showing the relationship between the wiring width of the second wafer formed by the above control and the region of the wafer. The vertical axis represents the wiring width, and the horizontal axis represents the central angle (angle) of each region. As shown in FIG. 12, the wiring widths of the wirings formed in the regions (A1 to A4) of the wafer W are all within the desired range Wa.

  In this way, by feeding back the data (processing information) of the wafer W in the previous process to the subsequent process, it is possible to improve the processing accuracy of the wafer W in the subsequent process and perform stable processing. For example, in the plasma etching process, variations in processing dimensions (for example, wiring width) can be reduced.

(Embodiment 3)
In the first embodiment, in the heater 205c, the four heater resistors 205c1, 205c2, 205c3, and 205c4 are electrically connected in series by the conductive portion C. However, the conductive portion C is disposed. It is good also as the shape which connected the location. That is, the heater resistor may have a ring shape (C shape) with one portion cut.

  FIG. 13 is a plan view schematically showing the configuration of the heater 205c of the present embodiment. As shown in FIG. 13, the heater 205c is disposed on the outermost periphery of the circular planar region of the dielectric film portion 202, and has a heater resistor 205c5. The heater resistor is made of a conductive material. As the conductive material, tungsten, nickel-chromium alloy, nickel-aluminum alloy, or the like can be used. Moreover, you may use what mixed the suitable additional metal with these materials. The heater resistor 205c5 has portions corresponding to the regions A1 to A4 described with reference to FIG.

  The bypass circuit 300c1 is connected in parallel to the area A1 portion of the heater resistor 205c5, and the bypass circuit 300c2 is connected in parallel to the area A2 portion of the heater resistor 205c5, and the area A3 of the heater resistor 205c5. The bypass circuit 300c3 is connected in parallel to the part, and the bypass circuit 300c4 is connected in parallel to the area A4 part of the heater resistor 205c5. Each bypass circuit 300c1, 300c2, 300c3 and 300c4 is connected to a bypass control device 301c. This bypass control circuit forms part of the control device 112. Further, the temperature sensor 210c1 is disposed on the back surface side of the central portion of the region A1 portion of the heater resistor 205c5, and the temperature sensor 210c2 is disposed on the back surface side of the central portion of the region A2 portion of the heater resistor 205c5. Is done. Further, a temperature sensor 210c3 is disposed on the back surface side of the central portion of the region A3 of the heater resistor 205c5, and a temperature sensor 210c4 is disposed on the back surface side of the central portion of the region A4 of the heater resistor 205c5. Is done. Each temperature sensor 210c1, 210c2, 210c3, and 210c4 is connected to the control device 112.

  Also in such a heater 205c, the processing accuracy of the wafer W can be improved by controlling the temperature of the heater 205c in the same manner as in the first embodiment. That is, bypass circuits (current control elements) 300c1, 300c2, 300c3, and 300c4 are connected in parallel to partial locations (for example, the respective regions A1 to A4) of the heater resistor 205c5, and currents flowing to these bypass circuits are supplied. By adjusting, the temperature of the wafer W can be adjusted with high accuracy. Thereby, the processing accuracy of the wafer W can be improved.

  In the above description, the heater 205c has been described as an example. Similarly, the heater 205b may have a shape in which the heater resistors 205b1, 205b2, and 205b3 are connected. Similarly, the heater 205a may have a shape in which heater resistors 205a2 and 205a3 are connected.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the present invention is not limited to the embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say.

  The present invention is effective when applied to a plasma processing apparatus and a plasma processing method.

DESCRIPTION OF SYMBOLS 100 Plasma processing apparatus 101 Vacuum vessel 102 Vacuum pump 103 Processing chamber 104 Radio wave source 105 Waveguide 106 Resonator 106a Resonance chamber 107 Sample stand 108 Bias power supply 109 Heater power supply 109a Heater power supply 109b Heater power supply 109c Heater power supply 110 Power supply for electrostatic adsorption 111 Temperature Controller 112 Controller 113 Solenoid Coil 114 Window Member 115 Shower Plate 116 Gas Supply Part 117 Opening Part 200 Base Part 200a Insulating Film 201 Electrostatic Adsorption Electrode 202 Dielectric Film Part 202a Lower Dielectric Film 202b Upper Dielectric Membrane 203 Refrigerant passage 205a Heater 205a1, 205a2, 205a3 Heater resistor 205b Heater 205b1, 205b2, 205b3 Heater resistor 205c Heater 205c1, 205c2, 205c3, 205c4 , 205c5 Heater resistor 210 Temperature sensor 210a1, 210a2, 210a3 Temperature sensor 210b1, 210b2, 210b3 Temperature sensor 210c1, 210c2, 210c3, 210c4 Temperature sensor 213 Through hole 214 Through hole 215 Pin 300a1, 300a2, 300a3 Bypass circuit (current control) element)
300b1, 300b2, 300b3 Bypass circuit (current control element)
300c1, 300c2, 300c3, 300c4 Bypass circuit (current control element)
301a Bypass control device 301b Bypass control device 301c Bypass control devices A1 to A4 Regions Aa, Ab, Ac Region C Conductive part F Filter MC Matching circuit Ra1 Radius Ra2 Radius Rb Radius Rc Radius W Wafer

Claims (11)

A plasma processing apparatus that places a substrate on a sample stage disposed in a processing chamber and processes the substrate using plasma formed in the processing chamber,
A first heater provided in the sample stage and having two or more heater resistors connected in series;
A power source connected to both ends of the two or more heater resistors connected in series;
Two or more bypass circuits, wherein each of the two or more heater resistors is connected in parallel;
I have a,
The first heater and the second heater are provided inside the sample stage,
The first heater is provided in a first region that is an outer peripheral portion of the sample stage,
The second heater is provided in a second region inside the first region,
The second heater has two or more heater resistors,
The heater resistor of the first heater has a shape along an arc of a first angle from a point in the sample stage,
The plasma processing apparatus , wherein the heater resistor of the second heater has a shape along an arc of a second angle larger than the first angle from the point . The plasma processing apparatus according to claim 1 ,
A plasma processing apparatus, comprising a bypass circuit connected in parallel to each of the two or more heater resistors of the second heater. The plasma processing apparatus according to claim 1 ,
A control unit connected to the bypass circuit;
The said control part is a plasma processing apparatus which adjusts the electric current amount which flows into each of the said 2 or more heater resistor which the said 1st heater has with the said bypass circuit. The plasma processing apparatus according to claim 3 , wherein
A temperature sensor for detecting the temperature of the two or more heater resistors of the first heater;
The controller is
Of the temperatures of the two or more heater resistors of the first heater, the amount of power supplied from the power source to the first heater is adjusted based on the lowest value,
A plasma processing apparatus for adjusting an amount of current flowing through a heater resistor other than the lowest heater resistor by adjusting an amount of current flowing through the bypass circuit. The plasma processing apparatus according to claim 3 , wherein
A storage unit that stores first processing information that is data relating to a processing dimension of a processing film formed in a region of the substrate corresponding to the first region of the sample stage;
The controller is
Among the data, the amount of power supplied from the power source to the first heater is adjusted based on the maximum value,
A plasma processing apparatus that adjusts the amount of current flowing through the bypass circuit to adjust the amount of current flowing through a heater resistor other than the heater resistor corresponding to the region where the highest-value processed film is formed. A plasma processing method in which a substrate is placed on a sample stage disposed in a processing chamber, and the substrate is processed using plasma formed in the processing chamber,
A first heater provided in the sample stage and having two or more heater resistors connected in series;
A power source connected to both ends of the two or more heater resistors connected in series;
Two or more bypass circuits, wherein each of the two or more heater resistors is connected in parallel;
A plasma processing method using a plasma processing apparatus, comprising: a control unit connected to the power source and the bypass circuit;
By the control unit,
Of the temperatures of the two or more heater resistors of the first heater, the amount of power supplied from the power source to the first heater is adjusted based on the lowest value,
A plasma processing method of adjusting an amount of current flowing through a heater resistor other than the lowest heater resistor by adjusting an amount of current flowing through the bypass circuit. The plasma processing method according to claim 6 .
The first heater and the second heater are provided inside the sample stage,
The first heater is provided in a first region that is an outer peripheral portion of the sample stage,
The second heater is provided in a second region inside the first region,
The second heater has two or more heater resistors,
The heater resistor of the first heater has a shape along an arc of a first angle from a point in the sample stage,
The plasma processing method, wherein the heater resistor of the second heater has a shape along an arc of a second angle larger than the first angle from the point. The plasma processing method according to claim 7 , wherein
A plasma processing method, comprising: a bypass circuit connected in parallel to each of the two or more heater resistors of the second heater. A plasma processing method in which a substrate is placed on a sample stage disposed in a processing chamber, and the substrate is processed using plasma formed in the processing chamber,
A first heater provided in the sample stage and having two or more heater resistors connected in series;
A power source connected to both ends of the two or more heater resistors connected in series;
Two or more bypass circuits, wherein each of the two or more heater resistors is connected in parallel;
A control unit connected to the power source and the bypass circuit;
A plasma processing method using a plasma processing apparatus, comprising: a storage unit that stores first processing information that is data relating to a processing dimension of a processing film formed on the substrate;
By the control unit,
Among the data, the amount of power supplied from the power source to the first heater is adjusted based on the highest value of the data in the region corresponding to the first heater,
A plasma processing method for adjusting an amount of current flowing in a heater resistor other than a heater resistor corresponding to a region where the processed film having the highest value is formed by adjusting an amount of current flowing in the bypass circuit. The plasma processing method according to claim 9 , wherein
The first heater and the second heater are provided inside the sample stage,
The first heater is provided in a first region that is an outer peripheral portion of the sample stage,
The second heater is provided in a second region inside the first region,
The second heater has two or more heater resistors,
The heater resistor of the first heater has a shape along an arc of a first angle from a point in the sample stage,
The plasma processing method, wherein the heater resistor of the second heater has a shape along an arc of a second angle larger than the first angle from the point. The plasma processing method according to claim 10 .
A plasma processing method, comprising: a bypass circuit connected in parallel to each of the two or more heater resistors of the second heater.

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