JP6305024B2 - 高分子発光素子 - Google Patents
高分子発光素子 Download PDFInfo
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- JP6305024B2 JP6305024B2 JP2013236950A JP2013236950A JP6305024B2 JP 6305024 B2 JP6305024 B2 JP 6305024B2 JP 2013236950 A JP2013236950 A JP 2013236950A JP 2013236950 A JP2013236950 A JP 2013236950A JP 6305024 B2 JP6305024 B2 JP 6305024B2
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- 125000001424 substituent group Chemical group 0.000 claims description 131
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- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229920000578 graft copolymer Polymers 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001245 hexylamino group Chemical group [H]N([*])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 125000003707 hexyloxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
- 229940083761 high-ceiling diuretics pyrazolone derivative Drugs 0.000 description 1
- 150000007857 hydrazones Chemical class 0.000 description 1
- 229920006270 hydrocarbon resin Polymers 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 125000004464 hydroxyphenyl group Chemical group 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
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- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
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- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 125000005956 isoquinolyl group Chemical group 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
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- 239000012528 membrane Substances 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
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- 125000002816 methylsulfanyl group Chemical group [H]C([H])([H])S[*] 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
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- 125000005447 octyloxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
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- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
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- 125000004115 pentoxy group Chemical group [*]OC([H])([H])C([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 125000004894 pentylamino group Chemical group C(CCCC)N* 0.000 description 1
- 125000001644 phenoxazinyl group Chemical group C1(=CC=CC=2OC3=CC=CC=C3NC12)* 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
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- 125000003356 phenylsulfanyl group Chemical group [*]SC1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
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- 125000005936 piperidyl group Chemical group 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
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- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
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- 235000011056 potassium acetate Nutrition 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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- 230000001681 protective effect Effects 0.000 description 1
- JEXVQSWXXUJEMA-UHFFFAOYSA-N pyrazol-3-one Chemical class O=C1C=CN=N1 JEXVQSWXXUJEMA-UHFFFAOYSA-N 0.000 description 1
- 150000003219 pyrazolines Chemical class 0.000 description 1
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical compound C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 1
- 125000005554 pyridyloxy group Chemical group 0.000 description 1
- 125000005030 pyridylthio group Chemical group N1=C(C=CC=C1)S* 0.000 description 1
- 125000000168 pyrrolyl group Chemical group 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000001603 reducing effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000001022 rhodamine dye Substances 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
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- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 125000003748 selenium group Chemical group *[Se]* 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- 229920002050 silicone resin Polymers 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- 238000003980 solgel method Methods 0.000 description 1
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- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical class C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
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Description
本発明の高分子発光素子は、陰極と、陽極と、該陰極と該陽極との間に有機高分子発光化合物を含む発光層を有する。そして、該陰極と該陽極との間には少なくとも一つの機能層を更に有する。
(e)陽極−正孔輸送層−発光層−陰極
(f)陽極−発光層−電子輸送層−陰極
(g)陽極−正孔輸送層−発光層−電子輸送層−陰極
(d’)陽極−インターレイヤー層−発光層−陰極
(e’)陽極−正孔輸送層−インターレイヤー層−発光層−陰極
(f’)陽極−インターレイヤー層−発光層−電子輸送層−陰極
(g’)陽極−正孔輸送層−インターレイヤー層−発光層−電子輸送層−陰極
(h)陽極−電荷注入層−発光層−陰極
(i)陽極−発光層−電荷注入層−陰極
(j)陽極−電荷注入層−発光層−電荷注入層−陰極
(k)陽極−電荷注入層−正孔輸送層−発光層−陰極
(l)陽極−正孔輸送層−発光層−電荷注入層−陰極
(m)陽極−電荷注入層−正孔輸送層−発光層−電荷注入層−陰極
(n)陽極−電荷注入層−発光層−電子輸送層−陰極
(o)陽極−発光層−電子輸送層−電荷注入層−陰極
(p)陽極−電荷注入層−発光層−電子輸送層−電荷注入層−陰極
(q)陽極−電荷注入層−正孔輸送層−発光層−電子輸送層−陰極
(r)陽極−正孔輸送層−発光層−電子輸送層−電荷注入層−陰極
(s)陽極−電荷注入層−正孔輸送層−発光層−電子輸送層−電荷注入層−陰極
次に、本発明の高分子発光素子を構成する各層の材料及び形成方法について、より具体的に説明する。
本発明の高分子発光素子を構成する基板の材料は、電極を形成し、有機物の層を形成する際に化学的に変化しないものであればよく、例えばガラス、プラスチック、高分子フィルム、金属フィルム、シリコン基板、これらを積層したものなどが用いられる。前記基板としては、市販のものが入手可能であり、又は公知の方法により製造することができる。
本発明の高分子発光素子を構成する陽極においては、正孔注入層、正孔輸送層、インターレイヤー、発光層等で用いられる有機半導体材料への正孔供給性の観点から、かかる陽極の発光層側表面の仕事関数が4.0eV以上であることが好ましい。
このような陽極の具体的な構成例としては、
(i)Ag−MoO3
(ii)(Ag-Pd-Cu合金)−(ITO及び/又はIZO)
(iii)(Al-Nd合金)−(ITO及び/又はIZO)
(iv)(Mo-Cr合金)−(ITO及び/又はIZO)
(v)(Ag-Pd-Cu合金)−(ITO及び/又はIZO)−MoO3
などが例示される。十分な光反射率を得る為に、Al、Ag、Al合金、Ag合金、Cr合金などの高光反射性金属層の膜厚は50nm以上であることが好ましく、より好ましくは80
nm以上である。ITO、IZO、MoO3などの高仕事関数材料層の膜厚は通常、5nm〜500nmの範囲である。
本発明の高分子発光素子において、正孔注入層を形成する材料としては、金属酸化物が挙げられる。ここで用いられる金属酸化物としては、クロム(Cr)、タングステン(W)、バナジウム(V)、ニオブ(Nb)、タンタル(Ta)、チタン(Ti)、ジルコニウム(Zr)、ハフニウム(Hf)、スカンジウム(Sc)、イットリウム(Y)、トリウム(Tr)、マンガン(Mn)、鉄(Fe)、ルテニウム(Ru)、オスミウム(Os)、コバルト(Co)、ニッケル(Ni)、銅(Cu)、亜鉛(Zn)、カドミウム(Cd)、アルミニウム(Al)、ガリウム(Ga)、インジウム(In)、シリコン(Si)、ゲルマニウム(Ge)、錫(Sn)、鉛(Pb)、アンチモン(Sb)、ビスマス(Bi)あるいは、ランタン(La)からルテチウム(Lu)までのいわゆる希土類元素などの酸化物を挙げることができる。
なかでも酸化タングステン、酸化モリブデンが正孔注入性の観点から好ましい。
本発明の高分子発光素子において、正孔輸送層又はインターレイヤーを構成する材料としては、特定の高分子化合物を使用する。そのことにより、本発明の高分子発光素子は、通電直後の輝度低下が小さく、LT80が長くなる。以下、本発明で用いる高分子化合物、該高分子化合物の原料化合物、および、高分子発光素子の好適な実施形態について詳細に説明する。
本発明で用いる高分子化合物は、下記式(1)で表される第一構成単位を全構成単位の合計に対して51モル%以上含み、かつ、下記式(2)で表される構成単位および/または下記式(3)で表される構成単位を含む。
第一構成単位は、下記式(1)で表される構成単位である。
なお、当該基は上記置換基を有していてもよい。
第二構成単位は、下記式(2)で表される構成単位である。
非置換若しくは置換のアジリジニル基、アジド基、非置換若しくは置換のエポキシ基、非置換若しくは置換のオキセタニル基、非置換若しくは置換のアルケニル基、非置換若しくは置換のアルキニル基、シクロブテンを有する非置換若しくは置換のアリール基、シクロブテンを有する非置換若しくは置換の1価の複素環基が好ましく、非置換若しくは置換のアルケニル基、シクロブテンを有する非置換若しくは置換のアリール基、シクロブテンを有する非置換若しくは置換の1価の複素環基がより好ましく、非置換若しくは置換のアルケニル基、シクロブテンを有する非置換若しくは置換のアリール基がさらに好ましい。
なお、式(X−01)〜(X−19)中、「*」は結合手を示す。
第三構成単位は、下記式(3)で表される構成単位である。
本発明の高分子発光素子において、発光層は高分子発光材料から形成される。高分子発光材料としては、ポリフルオレン誘導体、ポリパラフェニレンビニレン誘導体、ポリフェニレン誘導体、ポリパラフェニレン誘導体、ポリチオフェン誘導体、ポリジアルキルフルオレン、ポリフルオレンベンゾチアジアゾール、ポリアルキルチオフェン等の共役系高分子化合物を好適に用いることができる。
本発明の高分子発光素子において、電子輸送層又は正孔ブロック層を構成する材料としては、公知のものが使用でき、トリアゾール誘導体、オキサゾール誘導体、オキサジアゾール誘導体、イミダゾール誘導体、フルオレノン誘導体、ベンゾキノン若しくはその誘導体、ナフトキノン若しくはその誘導体、アントラキノン若しくはその誘導体、テトラシアノアントラキノジメタン若しくはその誘導体、フルオレノン誘導体、ジフェニルジシアノエチレン若しくはその誘導体、ジフェノキノン誘導体、アントラキノジメタン誘導体、アントロン誘導体、チオピランジオキシド誘導体、カルボジイミド誘導体、フルオレニリデンメタン誘導体、ジスチリルピラジン誘導体、ナフタレン、ペリレン等の芳香環テトラカルボン酸無水物、フタロシアニン誘導体、8−キノリノール誘導体の金属錯体やメタルフタロシアニン、ベンゾオキサゾールやベンゾチアゾールを配位子とする金属錯体に代表される各種金属錯体、有機シラン誘導体などが挙げられる。
本発明の高分子発光素子において、電子注入層を構成する材料としては、公知のものが使用でき、トリアゾール誘導体、オキサゾール誘導体、オキサジアゾール誘導体、イミダゾール誘導体、フルオレノン誘導体、ベンゾキノン若しくはその誘導体、ナフトキノン若しくはその誘導体、アントラキノン若しくはその誘導体、テトラシアノアントラキノジメタン若しくはその誘導体、フルオレノン誘導体、ジフェニルジシアノエチレン若しくはその誘導体、ジフェノキノン誘導体、アントラキノジメタン誘導体、アントロン誘導体、チオピランジオキシド誘導体、カルボジイミド誘導体、フルオレニリデンメタン誘導体、ジスチリルピラジン誘導体、ナフタレン、ペリレン等の芳香環テトラカルボン酸無水物、フタロシアニン誘導体、8−キノリノール誘導体の金属錯体やメタルフタロシアニン、ベンゾオキサゾールやベンゾチアゾールを配位子とする金属錯体に代表される各種金属錯体、有機シラン誘導体、などが挙げられる。
本発明において陰極は、前記発光層の上に直接、あるいは、任意の層を介して設けられる。陰極は陽極と同様の材料から公知の方法によって形成すればよい。好ましい陰極は、例えば、特開2011−146307又は特許公開2011−049546に記載されているものである。陰極は2層以上の複数層から構成されてよい。その場合、本明細書において、発光層に近い側から順に、第1陰極層、第2陰極層、第3陰極層(3層以上含む場合)ということがある。
本発明の高分子発光素子が任意に有しうる膜厚5nm以下の絶縁層は、電極との密着性向上、電極からの電荷(即ち正孔又は電子)注入改善、隣接層との混合防止などの機能を有するものである。上記絶縁層の材料としては、金属フッ化物、金属酸化物、有機絶縁材料(ポリメチルメタクリレートなど)、等が挙げられる。膜厚5nm以下の絶縁層を設けた高分子発光素子としては、陰極に隣接して膜厚5nm以下の絶縁層を設けたもの、陽極に隣接して膜厚5nm以下の絶縁層を設けたものが挙げられる。
本発明の高分子発光素子の製造方法は、特に限定されず、基板上に各層を順次積層することにより製造することができる。具体的には、基板上に陽極を設け、その上に正孔注入層、正孔輸送層、インターレイヤー等の層を必要に応じて設け、その上に発光層を設け、その上に電子輸送層、電子注入層等の層を必要に応じて設け、さらにその上に、陰極を積層することにより製造することができる。
本発明の高分子発光ディスプレイ装置は、前記本発明の高分子発光素子を1画素単位として備える。画素単位の配列の態様は、特に限定されず、テレビ等のディスプレイ装置で通常採られる配列とすることができ、多数の画素が共通の基板上に配列された態様とすることができる。本発明の装置において、基板上に配列される画素は、必要に応じて、バンクで規定される画素領域内に形成することができる。
高分子化合物のポリスチレン換算の数平均分子量および重量平均分子量は、ゲルパーミエーションクロマトグラフィー(GPC)(島津製作所製、商品名:LC−10Avp)を用いて以下の測定条件により求めた。
測定する高分子化合物を約0.05重量%の濃度になるようにテトラヒドロフランに溶解させ、GPCに10μL注入した。GPCの移動相としてテトラヒドロフランを用い、2.0mL/分の流速で流した。カラムとして、PLgel MIXED−B(ポリマーラボラトリーズ製)を用いた。検出器には示差屈折率検出器(島津製作所製、商品名:RID−10A)を用いた。
化合物1を用いて、下記のとおり化合物2を合成した。
下記式(K−1)で表される構成単位と、下記式(K−2)で表される構成単位を、92.5:7.5のモル比(仕込み原料による理論値)で有する重合体(高分子化合物A)の合成を、下記のとおり行った。
下記式(K−1)で表される構成単位と、下記式(K−5)で表される構成単位と、下記式(K−3)で表される構成単位を、50:42.5:7.5のモル比(仕込み原料による理論値)で有する重合体(高分子化合物D)の合成を、下記のとおり行った。
下記式(K−1)で表される構成単位と、下記式(K−2)で表される構成単位と、下記式(K−6)で表される構成単位を、42.5:7.5:50のモル比(仕込み原料による理論値)で有する重合体(高分子化合物AA)の合成を、下記のとおり行った。
不活性雰囲気下、下記式:
実施例1
(1−1:陽極の洗浄)
図1を参照して、ITO陽極2が成膜されたガラス基板1にUVオゾン洗浄を施し、ITO陽極2の表面を洗浄した。
上記(1−1)で得たITO陽極2上に、RFスッパタ法を用い、第1の機能層3として膜厚5nmの酸化タングステン層を成膜した。第1の機能層3は正孔注入層としての機能を有する。
高分子化合物Aおよびキシレンを、該高分子化合物Aが0.7重量%の割合となるように混合し、第2の機能層形成用組成物1を得た。
高分子化合物EMおよびキシレンを、該高分子化合物EMが1.25重量%の割合となるように混合し、発光層形成用組成物1を得た。
上記(1−4)で得た発光層5上に、真空蒸着法によって、第1陰極層6として膜厚5nmのフッ化ナトリウム層、第2陰極層7として膜厚100nmのアルミニウム層を、連続的に成膜し、陰極8を形成した。なお、蒸着装置内の真空度は、1×10-4Pa以下であった。
上記(1−5)で得た積層を有する基板を真空蒸着装置より取り出し、不活性雰囲気下で、封止ガラス及び2液混合エポキシ樹脂にて封止し、高分子発光素子1を得た。ここで、エポキシ樹脂には、Robnor Resins社製のPX681Cを用いた。
上記(1−6)で得られた高分子発光素子1に、0V〜14Vまでの電圧を印加し、最大発光効率を評価した。さらに、初期輝度5000cd/m2となる電流値で一定電流を通電の下、輝度が20%減少するまでの寿命(LT80)を評価した。結果を表1に示す。
第2の機能層形成用組成物の製造において、高分子化合物Aに代えて高分子化合物Dを用いた他は、実施例1と同様に操作し、高分子発光素子2を作製し、評価した。結果を表1に示す。
第2の機能層形成用組成物の製造において、高分子化合物Aに代えて高分子化合物AA を用いた他は、実施例1-1と同様に操作し、高分子発光素子3を作製し、評価した。結果を表1に示す。
表1を参照すれば明らかなように、本願実施例の有機発光素子は、発光効率およびLT80が比較例に対して格段に優れる。
2…陽極、
3…第1の機能層(正孔注入層)、
4…第2の機能層(正孔輸送層)、
5…発光層、
6…第1陰極層、
7…第2陰極層、
8…陰極。
Claims (6)
- 陰極と、陽極と、該陰極と該陽極との間に設けられた第1の高分子化合物を含む発光層と、該発光層と該陽極との間に設けられた第1の機能層および第2の機能層を有し、該第1の機能層が遷移金属の酸化物を含み、該第2の機能層が、第2の高分子化合物を架橋させて形成した高分子化合物を含み、該第2の高分子化合物が、下記式(1)で表される構成単位を全構成単位の合計に対して80〜100モル%含み、かつ、下記式(2)で表される構成単位および下記式(3)で表される構成単位からなる群から選ばれる少なくとも1種の構成単位を含む高分子化合物である、高分子発光素子。
- 前記式(2)で表される構成単位が、下記式(4)で表される構成単位である、請求項1に記載の、高分子発光素子。
- 前記Xで表される1価の架橋性基が、下記式(X−1)または下記式(X−2)で示される1価の架橋性基である、請求項1または2に記載の、高分子発光素子。
- 前記Ar2が、非置換若しくは置換の2,7−フルオレンジイル、非置換若しくは置換のナフタレンジイル、非置換若しくは置換のフェナンスレンジイル、非置換若しくは置換のジヒドロフェナンスレンジイル、非置換若しくは置換のアントラセンジイル、非置換若しくは置換のピレンジイルまたは非置換若しくは置換のペリレンジイルである、請求項1〜3のいずれか一項に記載の、高分子発光素子。
- 請求項1〜4のいずれか一項に記載の高分子発光素子を備える面状光源。
- 請求項1〜4のいずれか一項に記載の高分子発光素子を備える表示装置。
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